Stage, substrate processing apparatus, and temperature adjustment method

Abstract

To provide a technique capable of appropriately adjusting the temperature of a substrate.SOLUTION: The stage adjusts a temperature of the substrate mounted on the mounting surface. The stage includes a mounting plate having the mounting surface, a heat exchange chamber provided below the mounting plate, and a plurality of ejection parts provided to face the mounting plate in the heat exchange chamber and configured to eject a liquid to the mounting plate. The plurality of ejectors can selectively or simultaneously execute a spray pattern in which the liquid is ejected to the mounting plate in a state of being mixed with gas and atomized, and a jet pattern in which only the liquid is ejected to the mounting plate.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a stage, a substrate processing apparatus, and a temperature adjustment method. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus equipped with a substrate mounting table (stage) on which a substrate is mounted inside a processing chamber. The stage includes a plurality of water spraying devices that form a water-wetted surface on the backside of a susceptor, an evaporation chamber that isolates the wetted surface formed on the backside of the susceptor from the surrounding atmosphere, and a pressure adjusting device that adjusts the pressure inside the evaporation chamber. The stage adjusts the pressure inside the evaporation chamber to evaporate the wetted surface and adjusts the temperature of the substrate using the latent heat of vaporization. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-44041 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can appropriately adjust the temperature of a substrate. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a stage for adjusting the temperature of a substrate placed on a placing surface, the stage comprising: a placing plate portion having the placing surface; a heat exchange chamber provided below the placing plate portion; and a plurality of ejection portions provided in the heat exchange chamber facing the placing plate portion and ejecting liquid onto the placing plate portion, wherein the plurality of ejection portions are capable of selectively or simultaneously executing a spray pattern in which the liquid is mixed with a gas to atomize the liquid and ejected onto the placing plate portion, and a jet pattern in which only the liquid is ejected onto the placing plate portion. [Effects of the Invention]

[0006] According to one aspect, the temperature of the substrate can be appropriately adjusted. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a diagram schematically illustrating an overall configuration of a substrate processing apparatus. [Figure 2] FIG. 2 is a vertical cross-sectional view showing the chuck top and temperature adjustment mechanism of the stage according to the first embodiment. [Figure 3] Fig. 3(A) is a cross-sectional view showing an example of the jetting part, and Fig. 3(B) is a cross-sectional view showing another example of the jetting part. [Figure 4] Fig. 4(A) is a diagram showing the action of the ejection part in the spray pattern, and Fig. 4(B) is a diagram showing the action of the ejection part in the jet pattern. [Figure 5] 10 is a graph showing the cooling capacity of spray patterns and jet patterns. [Figure 6] 10 is a graph showing an example of control for switching between a spray pattern and a jet pattern. [Figure 7] 10 is a flowchart illustrating an example of a temperature adjustment method. [Figure 8] Fig. 8(A) is a plan cross-sectional view showing a stage according to the second embodiment, and Fig. 8(B) is a cross-sectional view showing a jetting unit that performs only the jet pattern. [Figure 9] FIG. 10 is a vertical cross-sectional view showing the chuck top and temperature adjustment mechanism of the stage according to the third embodiment. [Figure 10] Fig. 10(A) is a perspective view showing an example of a lattice structure, and Fig. 10(B) is a perspective view showing an example of a unit structure of the lattice structure. [Figure 11] Figure 11(A) is an image showing a cross section of an actual lattice structure produced by additive manufacturing, and Figure 11(B) is a further enlarged image of the surface of the lattice structure in Figure 11(A). DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] <Overall configuration of substrate processing apparatus 1> 1, a substrate processing apparatus 1 according to an embodiment of the present disclosure is an inspection apparatus that performs electrical inspection of a wafer W, which is an example of a substrate. A plurality of semiconductor devices to be inspected are formed on the wafer W. Note that the substrate is not limited to the wafer W, and may be a carrier on which semiconductor devices are arranged, a glass substrate, a single chip, an electronic circuit board, or the like.

[0010] The substrate processing apparatus 1 includes a loader 10 for transporting a wafer W, a housing 20 arranged adjacent to the loader 10, a tester 30 arranged above the housing 20, a stage 40 housed within the housing 20, and a controller 90 for controlling each component of the substrate processing apparatus 1.

[0011] The loader 10 removes the wafer W from a FOUP (Front Opening Unified Pod) container (not shown) and places it on the stage 40 that has moved within the housing 20. The loader 10 also removes the inspected wafer W from the stage 40 and stores it in the container.

[0012] The housing 20 is formed into a substantially rectangular box-like shape and has an inspection space 21 therein for inspecting the wafer W. A stage 40 for transporting the wafer W is installed in the inspection space 21. The stage 40 receives the wafer W from the loader 10 in the inspection space 21 and moves within the inspection space 21 in three dimensions (X-axis direction, Y-axis direction, and Z-axis direction) while holding the wafer W.

[0013] A probe card 32 is held via an interface 31 at the upper part of the housing 20. The interface 31 has a performance board and a plurality of pogo blocks (not shown), and electrically connects the motherboard of the tester 30 to the probe card 32. The tester 30 is connected to a controller 90 of the substrate processing apparatus 1, and inspects the wafer W under the command of the controller 90.

[0014] The probe card 32 has a plurality of probes 33 (probes) that protrude downward into the inspection space 21. During inspection by the substrate processing apparatus 1, each probe 33 comes into contact with a pad or solder bump of each semiconductor device on the wafer W that has been moved to an appropriate three-dimensional coordinate position by the stage 40. The tester 30 performs an electrical inspection of each semiconductor device in a group with each probe 33 in contact with each semiconductor device. After inspecting each semiconductor device in a group, the controller 90 moves the stage 40 in three dimensions to shift its position on the wafer W, and then sequentially repeats the inspection of each semiconductor device in other groups by the tester 30, thereby inspecting all semiconductor devices.

[0015] The stage 40 includes a moving section 41 (an X-axis moving mechanism 42, a Y-axis moving mechanism 43, and a Z-axis moving mechanism 44) that is movable in the X-axis, Y-axis, and Z-axis directions, a mounting base 45, and a stage control section 49. The housing 20 includes a frame structure 22 that supports the moving section 41 and mounting base 45 of the stage 40, and the stage control section 49 in two levels, upper and lower.

[0016] The moving unit 41 moves the mounting table 45 in the X-axis, Y-axis, and Z-axis directions based on power supply from the stage control unit 49. The mounting table 45 has a mounting surface 45s on which the wafer W is directly placed. Note that the moving unit 41 may be configured to rotate the mounting table 45 around an axis (the θ direction) in addition to moving the mounting table 45 in the X-axis, Y-axis, and Z-axis directions.

[0017] The stage control unit 49 is connected to the controller 90 and controls the operation of the stage 40 based on commands from the controller 90. The stage control unit 49 includes, for example, an integrated control unit that controls the operation of the entire stage 40, a PLC and motor driver that control the operation of the moving unit 41, a temperature adjustment driver that controls the temperature adjustment mechanism 50 described below, a power supply unit, and the like (all not shown).

[0018] The controller 90 includes a control unit 91 that controls the entire substrate processing apparatus 1 and a user interface 95 connected to the control unit 91. The control unit 91 is an information processing unit that includes a processor 92, a memory 93, an input / output interface (not shown), and an electronic circuit. The processor 92 is one or a combination of a central processing unit (CPU), a graphics processing unit (GPU), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a circuit made of multiple discrete semiconductors, and the like. The memory 93 includes a main storage device made of a semiconductor memory or the like, and an auxiliary storage device made of a disk, semiconductor memory (flash memory), or the like. The memory 93 can be configured by appropriately combining volatile memory and non-volatile memory (e.g., a compact disc, a digital versatile disc (DVD), a hard disk, flash memory, etc.). In other words, in the present disclosure, the controller 90 is an electronic circuit having a CPU, a GPU, an ASIC, an FPGA, etc., and performs the various control operations described in this specification by executing instruction codes stored in the memory 93 or by being a circuit designed for a specific purpose.

[0019] On the other hand, the user interface 95 may be a keyboard through which a user inputs commands, or a display that visualizes and displays the operating status of the substrate processing apparatus 1. Alternatively, the user interface 95 may be a touch panel, a mouse, a microphone, a speaker, or other devices.

[0020] The controller 90 controls the operation of the tester 30 while each probe 33 is in contact with the wafer W, thereby inspecting each semiconductor device on the wafer W. The tester 30 transmits an electrical signal to each semiconductor device on the wafer W and receives a device signal in response from each semiconductor device, thereby determining, for example, whether or not each semiconductor device has an abnormality.

[0021] Furthermore, the substrate processing apparatus 1 is capable of adjusting the temperature of the wafer W during inspection by using a temperature adjustment mechanism 50 installed on the stage 40. This allows the substrate processing apparatus 1 to inspect the electrical characteristics of the wafer W under various temperature conditions. The configuration of the temperature adjustment mechanism 50 of the stage 40 according to the first embodiment will be described in more detail below.

[0022] First Embodiment The mounting table 45 of the stage 40 is configured by stacking a bottom plate 46 and a chuck top 47. The mounting table 45 also accommodates a heater 48 and the like inside the chuck top 47.

[0023] The bottom plate 46 is a member that attaches the mounting table 45 (chuck top 47) to the Z-axis movement mechanism 44. The bottom plate 46 may include a heat insulating structure or a heat dissipation structure that prevents heat from the chuck top 47 from being directed toward the Z-axis movement mechanism 44.

[0024] The heater 48 disposed inside the chuck top 47 may be a heater sheet, a heating wire, or the like. The heater 48 is connected to a temperature adjustment driver provided in the lower part of the housing 20, and is supplied with appropriate power under the control of the temperature adjustment driver by the controller 90, thereby heating the chuck top 47 and the wafer W to a target temperature. The heater 48 may be divided into a plurality of regions in the surface direction (horizontal direction), and the temperature of each region may be individually adjusted.

[0025] The chuck top 47 is a member on which the wafer W is directly placed, and has the above-mentioned placement surface 45s on its upper surface. The chuck top 47 is formed in a disk shape having a diameter slightly larger than that of the wafer W to be placed thereon. The chuck top 47 may also be provided with a fixing means capable of fixing the wafer W to be placed thereon. This fixing means may be a suction mechanism that sucks the wafer W, a mechanical mechanism that mechanically engages the wafer W, an electrostatic suction mechanism that electrostatically attracts the wafer W, or the like.

[0026] 2, in order to adjust the temperature of the wafer W placed on the chuck top 47, the temperature adjustment mechanism 50 has a heat exchange chamber 474 inside the chuck top 47 and is configured to eject a coolant into the heat exchange chamber 474. Specifically, the chuck top 47 has a mounting plate portion 471 having a mounting surface 45s on its upper surface, a base portion 472 provided on the opposite side (vertically below) of the mounting plate portion 471 with the heat exchange chamber 474 in between, and a peripheral wall 473 connecting the mounting plate portion 471 and the base portion 472. The chuck top 47 also has a temperature sensor 475 for detecting the temperature of the wafer W placed on the mounting surface 45s.

[0027] The mounting plate portion 471 is formed in a flat plate shape having a constant thickness in the horizontal direction. The mounting plate portion 471 has enough rigidity to support the wafer W and accommodates the heater 48 therein. The surface of the mounting plate portion 471 opposite to the mounting surface 45s forms a ceiling surface 471t of the heat exchange chamber 474.

[0028] The base portion 472 is thicker than the mounting plate portion 471, and constitutes a portion that is fixed to the bottom plate 46. In addition, the base portion 472 is provided inside with a plurality of flow paths through which a refrigerant for the temperature adjustment mechanism 50, which will be described later, can flow.

[0029] The peripheral wall 473 is formed in a ring shape extending a short distance in the vertical direction, and connects the outer periphery of the mounting plate portion 471 and the outer periphery of the base portion 472. The heat exchange chamber 474 is formed in a space surrounded by the ceiling surface of the mounting plate portion 471, the floor surface of the base portion 472, and the inner periphery of the peripheral wall 473.

[0030] The chuck top 47 is preferably made of a material with high thermal conductivity, such as aluminum, copper or pure copper, an aluminum alloy, a copper alloy, or ceramics. However, the chuck top 47 is not limited to these materials, and stainless steel, such as SUS, may also be used. Although FIG. 2 illustrates the chuck top 47 as a single component, the chuck top 47 may be formed by assembling multiple components. For example, the base 472 and the peripheral wall 473 may be formed as a single component, while the mounting plate 471 may be formed as a separate component and then assembled together. When the chuck top 47 is made of multiple components, the components may be made of different materials or the same material.

[0031] The temperature adjustment mechanism 50 includes, in the heat exchange chamber 474, a plurality of jetting parts 51 that jet the refrigerant toward the ceiling surface 471t of the mounting plate part 471. Specifically, the plurality of jetting parts 51 are formed as nozzles that protrude vertically upward from the floor surface 472f of the base part 472. Each jetting part 51 jets the refrigerant from its protruding end surface toward the ceiling surface 471t of the mounting plate part 471, thereby exchanging heat between the mounting plate part 471 and the refrigerant.

[0032] The multiple jetting units 51 according to the embodiment are configured to be able to selectively or simultaneously execute a spray pattern that sprays atomized liquid containing gas as a refrigerant and a jet pattern that jets liquid as a refrigerant. Examples of liquid refrigerants include water and fluorinated liquids. Examples of gas refrigerants include air and inert gases. Below, a case where water is used as the liquid refrigerant and air is used as the gas refrigerant will be described.

[0033] 3(A), each jetting part 51 has a first flow path 511 through which water flows and a second flow path 512 through which air flows. For example, the first flow path 511 is provided at the axis of the jetting part 51 and extends linearly along the axial direction (projecting direction) of the jetting part 51. A first opening 511a that communicates with the first flow path 511 and can eject water is provided on the projecting end surface of the jetting part 51.

[0034] On the other hand, second flow path 512 is provided around first flow path 511 and extends linearly and parallel to the axial direction of jetting part 51. Second flow path 512 may be branched into multiple paths extending around first flow path 511, or may be formed in a cylindrical shape that surrounds first flow path 511 and extends. A second opening 512a that communicates with second flow path 512 and is capable of discharging air is provided on the protruding end surface of jetting part 51.

[0035] The jetting part 51 thus formed can execute a spray pattern in which water is supplied to the first flow path 511 and discharged from the first opening 511a, while air is supplied to the surrounding second flow path 512 and discharged from the second opening 512a, thereby atomizing the discharged water. The water (hereinafter also referred to as mist) atomized above the jetting part 51 due to the discharge pressure of the water and the discharge pressure of the air is directed toward the ceiling surface 471t of the mounting plate part 471. In other words, the jetting part 51 of Fig. 3(A) is an external mixing type two-fluid nozzle that mixes and atomizes two types of fluid (water and air) externally.

[0036] Furthermore, by supplying water to the first flow path 511 while not supplying air to the second flow path 512 (setting the air flow rate and pressure to zero), the jetting unit 51 can execute a jetting pattern in which only water is jetted from the protruding end face (first opening 511a). In this jetting pattern, the water jetted from the jetting unit 51 is directed toward the ceiling surface 471t of the mounting plate portion 471 by the jetting pressure, and after hitting the ceiling surface 471t, is forced to move laterally of the mounting plate portion 471.

[0037] The water (including mist) sprayed into the heat exchange chamber 474 falls through the spaces between the spraying portions 51 and temporarily accumulates on the floor surface 472f of the base portion 472.

[0038] Note that the ejection part 51 is not limited to the configuration shown in Fig. 3(A) and can take various forms. For example, the ejection part 51 may have a second flow path 512 for supplying air as its axis, while having a first flow path 511 for supplying water around the second flow path 512 (a configuration with the flow paths reversed from Fig. 3(A)).

[0039] Also, as in another example shown in Fig. 3(B), the ejection part 51A may apply an internal mixing type two-fluid nozzle that mixes and atomizes two types of fluids (water, air) inside. For example, the ejection part 51A has a first flow path 511 for flowing water as its axis and has a second flow path 512 for flowing air at an adjacent position to the first flow path 511. And the second flow path 512 merges into the first flow path 511 near the tip of the ejection part 51A.

[0040] As a result, the air flowing through the second flow path 512 flows into the first flow path 511, mixes with the water flowing through the first flow path, and can atomize the water. Therefore, mist is discharged from the first opening 511a of the first flow path 511. And the discharged mist heads toward the ceiling surface 471t of the mounting plate part 471. Note that the ejection part 51A is also not limited to the configuration shown in Fig. 3(B). For example, it may have a second flow path 512 for supplying air as its axis, while having a first flow path 511 for supplying water around the second flow path 512 (a configuration with the flow paths reversed from Fig. 3(B)).

[0041] Returning to Fig. 2, the base part 472 of the chuck top 47 has a plurality of flow paths capable of supplying water and air to each of the above-described ejection parts 51. Specifically, the base part 472 includes a liquid supply path 52 capable of supplying water, a gas supply path 53 capable of supplying air, and a discharge path 54 for discharging the fluid (liquid, gas) supplied to the heat exchange chamber 474.

[0042] The liquid supply path 52 extends from a port on the outer peripheral surface of the chuck top 47 inside the base part 472 and branches into a plurality of paths at an intermediate position. The plurality of branch paths of the liquid supply path 52 extend respectively below the first flow path 511 of each ejection part 51 and bend upward to communicate with the first flow path 511.

[0043] Similarly, the gas supply path 53 extends from a port on the outer circumferential surface of the chuck top 47 inside the base 472 and branches into multiple paths along the way. The multiple branch paths of the gas supply path 53 extend below the second flow path 512 of each jetting part 51 and bend upward, thereby communicating with the second flow path 512. Furthermore, the gas supply path 53 is formed at a different height (vertical position) inside the base 472 from the liquid supply path 52. Therefore, the inside of the base 472 is partitioned so that water supplied from the outside and air do not mix.

[0044] The discharge path 54 is also connected to a plurality of discharge ports 54a formed in a floor surface 472f of the base 472. Each discharge port 54a is formed, for example, at a midpoint between adjacent jetting portions 51. The discharge path 54 branches into a plurality of paths corresponding to each discharge port 54a, which merge into one at a midpoint within the base 472 and reach a port on the outer circumferential surface of the chuck top 47.

[0045] The temperature adjustment mechanism 50 includes a plurality of fluid paths connected to the liquid supply path 52, the gas supply path 53, and the discharge path 54 outside the chuck top 47. The plurality of fluid paths include a circulation path 55 for circulating water between the chuck top 47 and the temperature adjustment mechanism 50, and a supply path 56 for supplying air to the chuck top 47.

[0046] One end of the circulation path 55 is connected to a port of the liquid supply path 52, and the other end is connected to a port of the discharge path 54. The circulation path 55 circulates water discharged from the discharge path 54 of the chuck top 47 and supplies the water to the liquid supply path 52 of the chuck top 47. A heat exchanger 57, a pump 58, and a chiller 59 are installed in this order along the direction of water flow in the circulation path 55. The temperature adjustment mechanism 50 may also include a valve that opens and closes the flow path of the circulation path 55, a flow rate regulator that adjusts the flow rate of water supplied to the liquid supply path 52, and the like.

[0047] When water heated in the chuck top 47 flows into the heat exchanger 57, the heat exchanger 57 lowers the temperature of the water through heat exchange. The pump 58 applies suction pressure to the primary side (the discharge path 54, heat exchanger 57 side) of the circulation path 55, thereby sucking water from the heat exchange chamber 474 via the discharge path 54 and the circulation path 55. Furthermore, the pump 58 pressure-feeds water to the secondary side (the gas supply path 53, chiller 59 side), thereby supplying water to the liquid supply path 52 via the chiller 59 and the circulation path 55. The chiller 59 also adjusts the temperature of the water to a target temperature using a jet pattern or the like. The chiller 59 may also have the function of a pump that pressure-feeds water and the function of a flow rate regulator that adjusts the flow rate of water.

[0048] On the other hand, one end of supply path 56 is connected to a port of gas supply path 53, and the other end is connected to compressor 60. Compressor 60 supplies compressed air to supply path 56, thereby supplying compressed air to gas supply path 53. Note that temperature adjustment mechanism 50 may include a valve that opens and closes the flow path of supply path 56, a flow regulator that adjusts the flow rate of air supplied to gas supply path 53, and the like.

[0049] The controller 90 of the substrate processing apparatus 1 is communicatively connected to the pump 58, chiller 59, compressor 60, etc., and controls these components of the temperature adjustment mechanism 50. This allows the controller 90 to adjust the supply timing, supply stop timing, flow rate, pressure (supply pressure), etc. of the water and air supplied to the jetting unit 51. By controlling the flow rate of the water and the pressure (flow rate) of the air supplied to the jetting unit 51, the controller 90 can selectively use two cooling methods, a spray pattern and a jet pattern, depending on the conditions.

[0050] 2, the temperature adjustment mechanism 50 may also include an exhaust path 61 and a pressure adjustment device 62 that adjust the pressure of the heat exchange chamber 474 by exhausting the gas therein. The controller 90 can lower the boiling point of the water in the heat exchange chamber 474 by using the pressure adjustment device 62 to reduce the pressure in the heat exchange chamber 474 to an appropriate pressure (saturated vapor pressure). This makes it possible to vaporize the atomized water ejected from the ejection part 51 at a low temperature, allowing the latent heat of vaporization to be used appropriately.

[0051] The pressure in the heat exchange chamber 474 may be adjusted by using the pump 58 to suck air (and water) through the exhaust path 54. For example, the controller 90 can increase the suction pressure of the pump 58 to change the pressure in the heat exchange chamber 474, thereby setting the boiling point so that the latent heat of vaporization can be utilized at a temperature equal to or lower than the control temperature (e.g., 85°C) of the wafer W. Furthermore, when the pump 58 is used, bubbles and steam generated in the heat exchange chamber 474 can be quickly exhausted as they are.

[0052] The substrate processing apparatus 1 according to the embodiment is basically configured as described above, and the operation of the temperature adjustment mechanism 50 of the stage 40 will be described below.

[0053] When inspecting the wafer W, the temperature of the wafer W increases by supplying power to the semiconductor device placed on the stage 40, and the heat of the wafer W is transferred to the mounting plate portion 471. In order to lower the temperature of the wafer W, the temperature adjustment mechanism 50 performs an operation of absorbing (cooling) the heat of the mounting plate portion 471 in the heat exchange chamber 474.

[0054] The temperature adjustment mechanism 50 selectively performs the spray pattern shown in Fig. 4(A) and the jet pattern shown in Fig. 4(B) using the multiple jetting parts 51 of the heat exchange chamber 474. That is, in the spray pattern, atomized water (mist) hits the mounting plate part 471 from each jetting part 51. On the other hand, in the jetting pattern, concentrated water hits the mounting plate part 471 from each jetting part 51.

[0055] Specifically, in the spray pattern shown in FIG. 4(A), each jetting part 51 jets water from the first opening 511a and jets air from the second opening 512a of each jetting part 51. This allows each jetting part 51 to spray a large amount of mist onto the ceiling surface 471t of the opposing mounting plate part 471. The sprayed mist easily evaporates near the mounting plate part 471. The evaporation requires latent heat of vaporization associated with the evaporation of liquid into gas, and therefore it is possible to absorb a large amount of heat from the mounting plate part 471. By utilizing the latent heat of vaporization, the vicinity of the ceiling surface 471t of the heat exchange chamber 474 can absorb, for example, 10,000 W / m 2 It has a high heat transfer coefficient of over K.

[0056] On the other hand, in the jet pattern shown in FIG. 4(B), each jetting unit 51 jets water from the first opening 511a, but does not jet air from the second opening 512a of each jetting unit 51 (or suppresses the air flow rate and pressure). As a result, each jetting unit 51 jets a concentrated amount of water onto the ceiling surface 471t of the mounting plate 471 that it faces. When this water hits the ceiling surface 471t of the mounting plate 471, it moves laterally. In other words, a collision jet of water is generated near the mounting plate 471, and the temperature limit layer of the water becomes thinner. Furthermore, the Coanda effect increases the effective area for heat exchange, and the temperature adjustment mechanism 50 can improve the in-plane uniformity of the temperature distribution and reduce thermal resistance.

[0057] That is, the temperature adjustment mechanism 50 has a higher heat exchange efficiency when using either the spray pattern or the jet pattern compared to conventional cooling methods (for example, a method of circulating a refrigerant through a flow path). However, while the use of the latent heat of vaporization in the spray pattern provides a higher cooling capacity (heat exchange efficiency), the use of the impinging jet in the jet pattern can be said to make it easier to improve the in-plane uniformity of the temperature distribution.

[0058] To compare the cooling capabilities of the spray pattern and the jet pattern, cooling was performed on a heated plate using both the spray pattern and the jet pattern. Figure 5 is a graph showing the experimental results of the cooling capabilities of the spray pattern and the jet pattern. The horizontal axis of the graph represents the flow rate of water ejected from the ejection portion 51, and the vertical axis represents the thermal resistance calculated from the temperature change of the plate where water was present. In the experiment, the heater installed on the plate was set to a constant heat output of 300 W, and the plate was exposed to mist in a spray pattern or water in a jet pattern for a fixed period of time (5 minutes), and the plate temperature was measured.

[0059] As shown in Figure 5, the thermal resistance of the spray pattern is lower than that of the jet pattern across the entire range of water flow rates from 5 mL / min to 900 mL / min. For example, when the water flow rate is 25 mL / min, the thermal resistance of the spray pattern is 69% lower than that of the jet pattern. Furthermore, when the water flow rate is 900 mL / min, the thermal resistance of the spray pattern is 42% lower than that of the jet pattern. Therefore, by utilizing the latent heat of vaporization of the spray pattern, it can be expected that the thermal resistance can be reduced by approximately 50% compared to the jet pattern.

[0060] Therefore, when the temperature of the wafer W is significantly higher than the target temperature during inspection of the wafer W, the substrate processing apparatus 1 may execute the spray pattern at each ejection unit 51. This allows the temperature of the wafer W to be efficiently lowered. Furthermore, when the temperature of the wafer W is not significantly higher than the target temperature during inspection of the wafer W, the substrate processing apparatus 1 may execute the jet pattern at each ejection unit 51. This allows the temperature of the wafer W to be quickly adjusted while maintaining a uniform temperature distribution on the wafer W.

[0061] For example, as shown in the graph of Fig. 6, the controller 90 of the substrate processing apparatus 1 stores a threshold value Th for monitoring the temperature of the wafer W. This threshold value may be set by a user of the substrate processing apparatus 1 or may be automatically set by the controller 90 in accordance with a target temperature for inspecting the wafer W. During inspection of the wafer W, the controller 90 controls the operation of the temperature adjustment mechanism 50 of the stage 40 based on the temperature of the wafer W. This temperature adjustment method will be described below with reference to the graph of Fig. 6 and the flowchart shown in Fig. 7.

[0062] In the temperature adjustment method for inspecting a wafer W, the controller 90 detects the temperature of the wafer W using the temperature sensor 475 in the chuck top 47 and acquires temperature information from the temperature sensor 475 (step S101). As described above, the temperature of the wafer W rises due to the power supply during inspection. In particular, during a transitional period of inspection, the temperature of the wafer W is likely to rise significantly in a short period of time when power is suddenly supplied after no power is supplied.

[0063] The controller 90 compares the acquired temperature of the wafer W with a pre-stored threshold value to determine whether the temperature of the wafer W is equal to or higher than the threshold value Th (step S102). If the temperature of the wafer W is lower than the threshold value (step S102: NO), the controller 90 continues to monitor the temperature of the wafer W. On the other hand, if the temperature of the wafer W is equal to or higher than the threshold value (step S102: YES), the controller 90 determines to execute a spray pattern in each ejection part 51, and proceeds to step S103.

[0064] In step S103, the controller 90 controls the operation of each device (pump 58, chiller 59, compressor 60, etc.) provided outside the chuck top 47 to supply water and air as refrigerants to each jetting unit 51 to perform a spray pattern. As a result, each jetting unit 51 sprays atomized water (mist) onto the ceiling surface 471t of the mounting plate unit 471 on which the wafer W is mounted in the heat exchange chamber 474. The wafer W and mounting plate unit 471, whose temperatures have risen, undergo heat exchange using the latent heat of vaporization of the mist, causing their temperatures to decrease in a short period of time.

[0065] The controller 90 monitors the temperature of the wafer W even while the spray pattern is being executed, and determines whether the temperature of the wafer W has fallen below the threshold value Th (step S104). If the temperature of the wafer W is equal to or higher than the threshold value (step S104: NO), the spray pattern is continued. On the other hand, if the temperature of the wafer W has fallen below the threshold value (step S104: YES), the controller 90 determines to switch from the spray pattern to the jet pattern, and proceeds to step S105.

[0066] In step S105, the controller 90 controls the operation of each device to supply the coolant water to each jetting portion 51 while stopping the supply of air, thereby performing the jetting pattern. This causes each jetting portion 51 to jet a large amount of water toward the mounting plate portion 471 on which the wafer W is placed. As described above, the wafer W and the mounting plate portion 471 are subjected to heat exchange by the impinging jets of water, and as a result, their temperatures are further reduced compared to the spraying pattern. However, the jetting pattern has a lower cooling capacity than the spraying pattern, and therefore reduces the temperature more gradually. Furthermore, the jetting pattern can improve the in-plane uniformity of the temperature distribution of the wafer W, reduce thermal resistance, and effectively adjust the temperature of the entire wafer W to the target temperature.

[0067] As described above, the substrate processing apparatus 1 and the stage 40 can adjust the temperature of the wafer W with high precision by selectively executing the spray pattern and the jet pattern in each jetting part 51.

[0068] The stage 40 and substrate processing apparatus 1 of the present disclosure are not limited to the above-described embodiment and may take various forms. For example, in the embodiment, the multiple jetting units 51 are in the form of nozzles protruding from the floor surface 472f. However, this is not limited thereto, and the jetting units 51 may take various forms capable of jetting liquid or gas. As an example, a configuration may be adopted in which liquid or gas flows through a first flow path 511 and a second flow path 512 in the base 472, and atomized water or water for a collision jet is jetted from a first opening 511a and a second opening 512a formed in the floor surface 472f itself. In other words, each jetting unit 51 may be provided in the base 472 and on the floor surface 472f.

[0069] Furthermore, the temperature adjustment mechanism 50 is not limited to a configuration in which the heat exchanger 57 and the chiller 59 are provided in the circulation path 55, but may be a configuration in which only one of them is provided. Alternatively, the temperature adjustment mechanism 50 is not limited to a configuration in which water (liquid) is circulated between the heat exchange chamber 474 as in the embodiment, but may be a configuration in which water is discharged from the heat exchange chamber 474 and discarded.

[0070] Second Embodiment 8(A) and 8(B), the stage 40A according to the second embodiment differs from the stage 40 according to the first embodiment, which has the same ejection units 51, in that the configurations of the multiple ejection units provided in the heat exchange chamber 474 are changed. In the following description, the same reference numerals will be used to designate components that are the same as or have the same functions as those in the substrate processing apparatus 1 according to the first embodiment, and detailed description thereof will be omitted.

[0071] In detail, the stage 40A is the one where the temperature of the wafer W is likely to increase among the multiple jetting parts (for example, 100 W / cm 2On the other hand, the above-described jetting unit 51 is installed in a location (high heat generation density exceeding 100 K) where the temperature rise of the wafer W is suppressed (low heat generation density), while the jetting unit 51B that performs only the jet pattern is installed in a location (low heat generation density) where the temperature rise of the wafer W is suppressed. For example, the central region of the wafer W is an example of a location where the temperature of the wafer W is likely to rise. For this reason, the jetting unit 51 that can perform both the spray pattern and the jet pattern is applied to one or more (four in FIG. 8(A)) jetting units facing the central region of the mounting surface 45s of the chuck top 47.

[0072] The other jetting units located in the peripheral region surrounding the central region of the wafer W are jetting units 51B. Jetting unit 51B has a flow path (first flow path 511) therein through which water flows, and is formed as a nozzle having an opening (first opening 511a) on the protruding end face that communicates with the flow path. In other words, jetting unit 51B can only execute the jet pattern. Note that the arrangement of jetting units 51, 51B is not limited to the above and may be arranged in appropriate positions depending on the structure of stage 40, the content of inspection and substrate processing, etc.

[0073] For example, when cooling the wafer W under normal conditions, each of the multiple jetting units 51, 51B performs a jetting pattern to cool the entire in-plane area of ​​the wafer W. If the temperature of the central area of ​​the wafer W rises during an inspection or other process, the jetting units 51 located in the central area switch to a spraying pattern. At this time, the controller 90 controls the pump 58 (or chiller 59) and the compressor 60 to adjust the flow rate of water and air to each jetting unit 51 performing the jetting pattern, thereby smoothly switching to the spraying pattern. This allows the stage 40A to quickly reduce the temperature of the central area of ​​the wafer W. At this time, each jetting unit 51B may continue to perform the jetting pattern or may temporarily stop the jetting pattern. In other words, the temperature adjustment mechanism 50 may be configured to perform the jetting pattern with each jetting unit 51B while performing the spraying pattern with each jetting unit 51.

[0074] Alternatively, in the case of a location where the temperature of the wafer W is likely to rise constantly, the jetting part 51 may be configured to always perform only the spray pattern, and the jetting part 51B provided around the jetting part 51 may be configured to always perform only the jet pattern.

[0075] Furthermore, when simultaneously executing a spray pattern and a jet pattern, the temperature adjustment mechanism 50 is not limited to realizing this by mutually changing the structures. That is, the temperature adjustment mechanism 50 is configured to install multiple jetting units 51 in the heat exchange chamber 474 and to independently supply water and air to the multiple jetting units 51 to the flow paths within the base 472 and to the external paths. This allows the controller 90 to individually control the water and air to each jetting unit 51, thereby simultaneously executing a spray pattern and a jetting pattern.

[0076] <Third embodiment> 9, a stage 40B according to the third embodiment differs from the above-described stages 40 and 40A in that it includes a heat exchanger 71 on a ceiling surface 471t of a mounting plate portion 471. That is, a plurality of jetting portions 51 in the chuck top 47 face the heat exchanger 71 and selectively apply a spray pattern and a jet pattern to the heat exchanger 71.

[0077] The heat exchanger 71 protrudes vertically downward from the mounting plate 471. As shown in Figures 10(A) and 10(B), a lattice structure 72 formed by additive manufacturing may be used as this heat exchanger 71. The lattice structure 72 is formed into a continuous structure by repeatedly connecting multiple designed unit structures 721 in three dimensions (horizontally and vertically).

[0078] The unit structure 721 has a plurality of arms 721a (e.g., eight) and a connecting base 721b to which the arms 721a are connected. Each arm 721a is formed in a cylindrical shape and protrudes radially from the connecting base 721b. As an example, four arms 721a protrude from the connecting base 721b in the positive direction of the Z axis, and four arms 721a protrude from the connecting base 721b in the negative direction of the Z axis. The arms 721a in the positive direction of the Z axis and the arms 721a in the negative direction of the Z axis are inclined so as to face the positive direction of the X axis, the negative direction of the X axis, the positive direction of the Y axis, and the negative direction of the Y axis, respectively. The diameter (lattice diameter) of each arm 721a depends on the capabilities of the 3D printer for additive manufacturing (such as the layer pitch), but may be, for example, approximately 0.5 mm to 1.5 mm, and more preferably 1 mm or less. The lengths (pitch) of the arms 721a may be set to the same dimensions, for example, in the range of about 1 mm to several mm.

[0079] The unit structure 721 thus formed has sufficient gaps 722 around each arm 721a and connecting base 721b. This allows the lattice structure 72 to move the refrigerant (water, air) ejected from each ejection part 51 laterally through the gaps 722 that are generated within the unit structure 721 or between the unit structures 721.

[0080] In particular, the lattice structure 72 has a regularity in which the same shape is repeatedly arranged, since it is formed by repeating a plurality of unit structures 721. Therefore, it has an advantage of being more uniform in temperature distribution than a structure with irregularly formed porous portions. Furthermore, since the heat exchanger 71 is provided only on the ceiling surface 471t, heat exchange with the mounting plate 471 (wafer W) above the heat exchanger 71 can be smoothly performed, while heat exchange with other portions (the lower and both side portions) can be suppressed.

[0081] The material for the lattice structure 72 should have high thermal conductivity and be easy to fabricate by additive manufacturing. For example, metals, alloys, or ceramics containing aluminum, magnesium, and / or copper, or ceramics are preferably used as the material for the lattice structure 72. One specific example of the material for the lattice structure 72 is AlSiMg (so-called aluminum casting).

[0082] The lattice structure 72 is formed by additive manufacturing on the mounting plate 471 as described above, whereby the unit structures 721 are stacked in the Z-axis direction while being joined to the mounting plate 471. By additive manufacturing, the lattice structure 72 is formed into a pattern such as the image shown in FIG. 11(A), for example.

[0083] Furthermore, by appropriately adjusting the conditions for additive manufacturing, the manufactured lattice structure 72 has a plurality of protrusions 723 on its surface when each arm 721a or connecting base 721b of the unit structure 721 is viewed enlarged as shown in FIG. 11(B). The plurality of protrusions 723 are formed in a substantially spherical shape and are firmly fixed to the surface of each arm 721a or connecting base 721b. Unlike the regularly repeated plurality of unit structures 721, each protrusion 723 is a microstructure that is randomly generated during additive manufacturing. The size (average spherical diameter) of each protrusion 723 is much smaller than the size of the unit structures 721, and is formed to an average spherical diameter of, for example, approximately 3 μm to 300 μm. The surface area of ​​the additively manufactured lattice structure 72 can be increased by having a large number of such minute protrusions 723.

[0084] In additive manufacturing, appropriate conditions are set depending on the additive manufacturing method (laser beam method, binder jetting, powder sintering, material extrusion method, etc.) and the material of the lattice structure 72 to generate the multiple protrusions 723. For example, when a laser beam method is used to perform additive manufacturing by melting or hardening granular aluminum casting (AlSi7Mg), conditions such as the average particle size of the material, laser output, laser beam diameter, layer pitch, modeling speed, and oxygen concentration are appropriately set to obtain the multiple protrusions 723. The average particle size of the material to obtain the multiple protrusions 723 may be, for example, in the range of 10 μm to 100 μm. The laser output may be, for example, in the range of 1 kW to 5 kW, and the laser beam diameter may be, for example, in the range of 50 μm to 300 μm. The layer pitch may be, for example, in the range of 20 μm to 200 μm. The modeling speed may be, for example, in the range of 10 cc / hr to 500 cc / hr. The oxygen concentration is set to 400 ppm or less.

[0085] By appropriately combining or satisfying at least one of the above additive manufacturing conditions, multiple protrusions 723 are generated on the surface of the additively manufactured lattice structure 72. Before manufacturing the heat exchanger 71, it is recommended to perform additive manufacturing multiple times under different conditions to increase the number of protrusions 723 and find optimal additive manufacturing conditions. A lattice structure 72 formed under appropriate additive manufacturing conditions to have multiple protrusions 723 is more likely to come into contact with fluid than a lattice structure formed by other methods, such as cutting (a structure without protrusions 723), and has higher heat exchange efficiency. Therefore, the stage 40B having the additively manufactured lattice structure 72 can more quickly adjust the temperature of the mounting plate portion 471 (wafer W) as the coolant flows through it.

[0086] As described above, the stage 40B according to the third embodiment can improve the efficiency of heat exchange with the refrigerant ejected from each ejection part 51 by providing the heat exchange part 71 (lattice structure 72). In particular, the liquid (water) ejected from each ejection part 51 increases the wettability of the lattice structure 72, and is easily vaporized during heat exchange. This allows the lattice structure 72 to perform heat exchange at high speed and with high response.

[0087] The heat exchanger 71 is not limited to the lattice structure 72, and various other structures (e.g., a concave-convex structure, a fin structure) may be employed. Alternatively, the heat exchanger 71 may employ a gyroid (periodic minimal surface) structure. One example of this gyroid structure is a TPMS structure, which is a triple periodic minimal surface. The heat exchanger 71 may adjust the temperature distribution of the wafer W by changing the height, thickness, roughness, etc. of the lattice structure 72 or gyroid structure in the horizontal direction (the surface direction of the mounting plate 471). Furthermore, the heat exchanger 71 may employ a structure formed by a manufacturing method other than 3D additive manufacturing (such as cutting or casting).

[0088] The technical ideas and effects of the present disclosure explained in the above embodiments will be described below.

[0089] A first aspect of the present disclosure is a stage 40, 40A, 40B that adjusts the temperature of a substrate (wafer W) placed on a mounting surface 45s, and includes a mounting plate portion 471 having the mounting surface 45s, a heat exchange chamber 474 provided below the mounting plate portion 471, and a plurality of ejection portions 51, 51A, 51B that are provided in the heat exchange chamber 474 facing the mounting plate portion 471 and eject liquid onto the mounting plate portion 471, and the plurality of ejection portions 51, 51A, 51B are capable of selectively or simultaneously executing a spray pattern in which the liquid is mixed with gas to atomize the liquid and ejected onto the mounting plate portion 471, and a jet pattern in which only the liquid is ejected onto the mounting plate portion 471.

[0090] As described above, the stages 40, 40A, and 40B can appropriately adjust the temperature of the substrate (wafer W) placed on the placement surface 45s by selectively or simultaneously executing the spray pattern and the jet pattern using the multiple jetting units 51, 51A, and 51B. For example, the spray pattern enables heat exchange with the placement plate unit 471 at a rate higher than the latent heat of vaporization. On the other hand, the jet pattern can thin the temperature limit layer by the impinging jet of liquid, and the effective area for heat exchange is increased by the Coanda effect, thereby improving the in-plane uniformity of the temperature distribution. Therefore, the stages 40, 40A, and 40B can efficiently and accurately adjust the temperature of the substrate, enabling stable substrate processing (inspection).

[0091] Furthermore, at least one of the ejection units 51, 51A, 51B can selectively execute both a spray pattern and a jet pattern, which allows the stages 40, 40A, 40B to easily switch between the spray pattern and the jet pattern.

[0092] Furthermore, at least one jetting part 51 mixes liquid and gas outside to atomize the liquid, thereby enabling the jetting part 51 to jet a mist of the liquid onto the mounting plate part 471 effectively.

[0093] Furthermore, at least one of the ejection parts 51A mixes the liquid with the gas inside to atomize the liquid. Even in this case, the ejection part 51 can eject the mist of the liquid onto the placement plate part 471 effectively.

[0094] Furthermore, the multiple jetting units 51, 51A include both jetting units that perform both spray and jet patterns, and jetting unit 51B that performs only the jet pattern. This allows the stage 40A to perform the spray pattern in areas requiring high heat generation density and the jet pattern in other areas, making it possible to appropriately adjust the amount of cooling within the surface of the substrate (wafer W).

[0095] Furthermore, stages 40, 40A, 40B are equipped with a pump 58 that supplies liquid to the multiple jetting units 51, 51A, 51B, a compressor 60 that supplies gas to the multiple jetting units 51, and a controller 90 that controls the pump 58 and compressor 60 to execute spray patterns and jet patterns using the multiple jetting units 51, 51A, 51B. This allows stages 40, 40A, 40B to appropriately control the execution of the spray patterns and jet patterns using the controller 90. For example, while executing a spray pattern, the controller 90 can easily switch to a jet pattern by controlling the flow rate of the gas being supplied (or stopping the supply).

[0096] Additionally, the stages 40, 40A, and 40B each include a pressure regulator 62 (or pump 58) that adjusts the pressure in the heat exchange chamber 474. The controller 90 controls the pressure regulator 62 to reduce the pressure in the heat exchange chamber 474, thereby promoting the generation of vapor within the heat exchange chamber 474 and continuously vaporizing the liquid. This allows the stages 40, 40A, and 40B to change the saturated vapor pressure of the liquid and set the boiling point so that a phase change can be utilized below the controlled temperature. As a result, by continuously vaporizing the liquid, the latent heat of vaporization can be continuously utilized to lower the temperature. Additionally, the stages 40, 40A, and 40B can quickly expel bubbles and vapor generated within the heat exchange chamber 474.

[0097] In addition, discharge paths 54 for discharging the liquid supplied to the heat exchange chamber 474 are provided at positions adjacent to the plurality of jetting portions 51, 51A, 51B. This allows the stages 40, 40A, 40B to smoothly discharge the liquid and gas jetted into the heat exchange chamber 474 via the discharge paths 54.

[0098] Furthermore, stages 40, 40A, 40B have circulation paths 55 connected to discharge paths 54 and circulating the liquid discharged from discharge paths 54 to the plurality of jetting portions 51, 51A, 51B, and heat exchangers 57 provided in circulation paths 55 and performing heat exchange of the discharged liquid. This allows stages 40, 40A, 40B to reuse the liquid jetted into heat exchange chambers 474, making it possible to reduce operating costs for temperature adjustment.

[0099] Furthermore, the mounting plate portion 471 has heat exchange portions 71 on the surface facing the plurality of jetting portions 51, which exchange heat with the liquid jetted from the plurality of jetting portions 51. This allows the stage 40B to further increase the efficiency of heat exchange with the substrate (wafer W).

[0100] The heat exchanger 71 has a heat exchange structure (such as a lattice structure 72 or a gyroid structure) in which a plurality of unit structures 721 each having a gap 722 are repeated. By employing the lattice structure 72 or the gyroid structure in this way, the heat exchanger 71 can perform good heat exchange while allowing the liquid or gas to circulate appropriately.

[0101] Furthermore, the heat exchanger 71 is formed by additive manufacturing and has a plurality of spherical protrusions 723 on its surface, which gives the heat exchanger 71 a larger surface area and further improves the efficiency of heat exchange with liquid or gas.

[0102] A second aspect of the present disclosure is a substrate processing apparatus 1 having stages 40, 40A, 40B that adjust the temperature of a substrate (wafer W) to be processed that is placed on a placement surface 45s, wherein the stages 40, 40A, 40B have a placement plate portion 471 having the placement surface 45s, a heat exchange chamber 474 provided below the placement plate portion 471, and a plurality of jetting portions 51, 51A, 51B that are provided in the heat exchange chamber 474 to face the placement plate portion 471 and jet liquid onto the placement plate portion 471, and the plurality of jetting portions 51, 51A, 51B can selectively or simultaneously execute a spray pattern in which the liquid mixed with gas is jetted into atomized form and jetted onto the placement plate portion 471, and a jet pattern in which only the liquid is jetted onto the placement plate portion 471. Even in this case, the substrate processing apparatus 1 can appropriately adjust the temperature of the substrate.

[0103] A second aspect of the present disclosure is a temperature adjustment method for adjusting the temperature of a substrate (wafer W) placed on a placement surface 45s of a stage 40, 40A, 40B, wherein the stage 40, 40A, 40B has a placement plate portion 471 having the placement surface 45s, a heat exchange chamber 474 provided below the placement plate portion 471, and a plurality of ejection portions 51, 51A, 51B provided in the heat exchange chamber 474 to face the placement plate portion 471 and ejecting liquid onto the placement plate portion 471, and the temperature adjustment method selectively or simultaneously executes a spray pattern in which the plurality of ejection portions 51, 51A, 51B eject the liquid in an atomized state mixed with gas onto the placement plate portion 471, and a jet pattern in which the plurality of ejection portions 51, 51A, 51B eject only the liquid onto the placement plate portion 471. Even in this case, the temperature adjustment method can appropriately adjust the temperature of the substrate.

[0104] The stage 40 and substrate processing apparatus 1 according to the presently disclosed embodiments are illustrative in all respects and are not limiting. The embodiments may be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments may be configured differently and may be combined within the scope of the appended claims.

[0105] The stage 40 of the present disclosure may be applied to a substrate processing apparatus that performs substrate processing such as film formation processing, etching processing, and cleaning processing on a wafer W. Furthermore, although the stage 40 according to the embodiment is configured to include the moving unit 41, the stage 40 may be configured without the moving unit 41 (for example, only the mounting table 45). [Explanation of symbols]

[0106] 1. Substrate processing equipment 40, 40A, 40B stages 45s Placement surface 51, 51A, 51B Spout part 471 Loading plate 474 Heat exchange room W wafer

Claims

1. A stage for adjusting the temperature of a substrate placed on a placement surface, a mounting plate portion having the mounting surface; a heat exchange chamber provided below the mounting plate portion; a plurality of jetting portions provided in the heat exchange chamber so as to face the mounting plate portion and configured to jet liquid onto the mounting plate portion; The plurality of ejection units can selectively or simultaneously execute a spray pattern in which the liquid is mixed with a gas and atomized and ejected onto the mounting plate unit, and a jet pattern in which only the liquid is ejected onto the mounting plate unit. stage.

2. At least one of the plurality of ejection units is capable of selectively executing both the spray pattern and the jet pattern. The stage of claim 1 .

3. The at least one jetting portion mixes the liquid and the gas externally to atomize the liquid. The stage of claim 2 .

4. the at least one jetting portion mixes the liquid and the gas therein to atomize the liquid; The stage of claim 2 .

5. The plurality of jetting units include both jetting units that perform the spray pattern and the jetting pattern and jetting units that perform only the jetting pattern. A stage according to any one of claims 1 to 4.

6. a pump for supplying the liquid to the plurality of jetting portions; a compressor that supplies the gas to the plurality of jetting portions; A controller that controls the pump and the compressor to execute the spray pattern and the jet pattern using the plurality of jetting portions. A stage according to any one of claims 1 to 4.

7. a pressure adjusting device for adjusting the pressure in the heat exchange chamber; The controller controls the pressure regulating device to reduce the pressure in the heat exchange chamber, thereby promoting the generation of vapor in the heat exchange chamber and continuously vaporizing the liquid. The stage of claim 6.

8. a discharge path for discharging the liquid supplied to the heat exchange chamber, the discharge path being provided adjacent to the plurality of jetting portions; A stage according to any one of claims 1 to 4.

9. a circulation path connected to the discharge path and configured to circulate the liquid discharged from the discharge path to the plurality of jetting portions; a heat exchanger provided in the circulation path and performing heat exchange of the discharged liquid, 9. The stage of claim 8.

10. the mounting plate portion has a heat exchange portion on a surface facing the plurality of ejection portions, which exchanges heat with the liquid ejected from the plurality of ejection portions. A stage according to any one of claims 1 to 4.

11. The heat exchange unit has a heat exchange structure in which a plurality of unit structures each having a gap are repeated. The stage of claim 10.

12. The heat exchange unit is formed by additive manufacturing and has a plurality of spherically formed convex portions on its surface. The stage of claim 11.

13. A substrate processing apparatus having a stage for adjusting the temperature of a substrate to be processed placed on a placement surface, The stage is a mounting plate portion having the mounting surface; a heat exchange chamber provided below the mounting plate portion; a plurality of jetting portions provided in the heat exchange chamber so as to face the mounting plate portion and configured to jet liquid onto the mounting plate portion; The plurality of ejection units can selectively or simultaneously execute a spray pattern in which the liquid is mixed with a gas and atomized and ejected onto the mounting plate unit, and a jet pattern in which only the liquid is ejected onto the mounting plate unit. Substrate processing equipment.

14. A temperature adjustment method for adjusting the temperature of a substrate placed on a mounting surface of a stage, comprising: The stage is a mounting plate portion having the mounting surface; a heat exchange chamber provided below the mounting plate portion; a plurality of jetting portions provided in the heat exchange chamber so as to face the mounting plate portion and configured to jet liquid onto the mounting plate portion; In the temperature adjustment method, a spray pattern in which the liquid is mixed with a gas and sprayed in an atomized state from the plurality of spraying parts onto the mounting plate part, and a jet pattern in which only the liquid is sprayed from the plurality of spraying parts onto the mounting plate part, selectively or simultaneously executed. Temperature adjustment method.

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