Display device

Abstract

To provide a technique for facilitating setting of parameters when rotating a substrate placed on a rotary table.SOLUTION: The display device displays a setting screen that indicates contents of substrate processing of a substrate processing apparatus including a vacuum container, a rotary table rotatably provided inside the vacuum container, and a plurality of mounting parts on which a substrate is mounted at a position away from a rotation center of the rotary table, moves with rotation of the rotary table, and rotates relative to the rotary table, and that can be input by a user. The plurality of mounting parts revolves by rotation of the rotary table and rotates by rotation of each of the plurality of mounting parts. The setting screen displays screen information having a plurality of types of items for controlling rotation of one placement unit for each of the plurality of placement units, and displays the screen information selected based on an operation of the user.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The present disclosure relates to a display device. [Background technology]

[0002] For example, Patent Document 1 proposes a rotation mechanism that rotates the substrate placement area on the turntable so that the substrate placed on the turntable rotates while revolving, and forms a film on the substrate as it repeatedly passes through a gas supply area due to the revolution. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-92156 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that makes it easy to set parameters when rotating a substrate placed on a rotary table. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a display device that displays a setting screen that can be input by a user and shows details of substrate processing in a substrate processing apparatus including a vacuum vessel, a turntable rotatably arranged inside the vacuum vessel, and a plurality of mounting sections on which substrates are placed at a position away from the center of rotation of the turntable, the mounting sections moving as the turntable rotates, and rotating relative to the turntable, wherein the mounting sections revolve with the rotation of the turntable and rotate independently on their own axes with the rotation of each of the mounting sections, and the setting screen displays screen information for each of the mounting sections, which has multiple types of items for controlling the rotation of one mounting section, and the display device has multiple pieces of screen information and displays the screen information selected based on the user's operation. [Effects of the Invention]

[0006] According to one aspect, it is possible to easily set parameters for rotating a substrate placed on a turntable. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a vertical cross-sectional side view showing an example of a film forming apparatus according to an embodiment. [Figure 2] FIG. 1 is a cross-sectional plan view showing an example of a film forming apparatus according to an embodiment. [Figure 3] FIG. 2 is a perspective view showing the inside of the film forming apparatus according to the embodiment. [Figure 4] FIG. 2 is a perspective view of the front surface side of a turntable of the film forming apparatus according to the embodiment. [Figure 5] FIG. 2 is a diagram showing an example of a hardware configuration of a control device according to the embodiment. [Figure 6] FIG. 2 is a diagram showing an example of the functional configuration of a control device according to the embodiment. [Figure 7] FIG. 4 is a diagram showing an example of a recipe according to the embodiment. [Figure 8] FIG. 4 is a diagram showing an example of a setting screen for setting a first parameter according to the embodiment. [Figure 9] 10 is a flowchart showing an example of a parameter setting process according to the embodiment. [Figure 10] 4 is a flowchart showing an example of a method for controlling the film forming apparatus according to the embodiment. [Figure 11] 4 is a flowchart showing an example of a method for controlling the film forming apparatus according to the embodiment. [Figure 12] FIG. 11 is a diagram for explaining the control method of FIG. 10 . [Figure 13] FIG. 11 is a diagram for explaining the control method of FIG. 10 . [Figure 14] FIG. 11 is a diagram for explaining the control method of FIG. 10 . [Figure 15] FIG. 10 is a diagram showing an example of a setting screen for setting a first parameter during maintenance according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] [Film forming equipment] A film forming apparatus 1 according to an embodiment of the present disclosure will be described with reference to FIG. 1. The film forming apparatus 1 forms a film by ALD (Atomic Layer Deposition) on a wafer W, which is an example of a substrate. The film forming apparatus 1 adsorbs BTBAS (bisterial butyl amino silane) gas, which is a source gas that is a process gas containing Si (silicon), onto the wafer W. Ozone (O3) gas, which is an oxidizing gas that oxidizes the adsorbed BTBAS gas, is supplied to form a molecular layer of SiO2 (silicon oxide), and this molecular layer is then exposed to plasma generated from a plasma generating gas to modify it. This series of processes is repeated multiple times to form a SiO2 film.

[0010] 1 and 2 are a longitudinal sectional side view and a transverse plan view of a film forming apparatus 1. The film forming apparatus 1 includes a generally circular, flat vacuum chamber 11 and a horizontal, disk-shaped rotary table 2 provided inside the vacuum chamber 11. The vacuum chamber 11 is composed of a top plate 12 and a chamber body 13 that forms the side walls and bottom of the vacuum chamber 11.

[0011] A central shaft 21 extends vertically downward from the center of the turntable 2. The central shaft 21 is connected to a revolution rotation drive unit 22 that is provided to close an opening 14 formed in the bottom of the vessel body 13. The turntable 2 is supported within the vacuum vessel 11 via the central shaft 21 and the revolution rotation drive unit 22, and rotates clockwise or counterclockwise in a plan view. A gas supply pipe 15 discharges N2 (nitrogen) gas into the gap between the central shaft 21 and the vessel body 13, thereby preventing the source gas and oxidizing gas from flowing from the front surface to the back surface of the turntable 2.

[0012] The underside of the top plate 12 of the vacuum chamber 11 is formed with a central region forming portion C, which is circular in plan view and protrudes toward the center of the turntable 2. Two convex portions 17, each of which has a generally fan-shaped planar shape with an arc-shaped top, extend from the central region forming portion C toward the outside of the turntable 2 as shown in FIG. 2. The central region forming portion C and the convex portions 17 form a ceiling surface that is lower than the outer regions. The gap between the central region forming portion C and the center of the turntable 2 forms a flow path 18 for N2 gas (see FIG. 1). During wafer W processing, N2 gas is supplied to the flow path 18 from a gas supply pipe connected to the top plate 12 and discharged from the flow path 18 toward the entire outer periphery of the turntable 2. This N2 gas prevents the source gas and the oxidizing gas from coming into contact with each other at the center of the turntable 2.

[0013] 3 is a perspective view showing the inside bottom surface of the container body 13. A flat ring-shaped recess 31 is formed in the container body 13 below the turntable 2 and along the periphery of the turntable 2. A ring-shaped slit 32 is opened in the bottom surface of the recess 31 along the circumferential direction of the recess 31, and the slit 32 is formed so as to penetrate the bottom of the container body 13 in the thickness direction. Furthermore, seven ring-shaped heaters 33 for heating the wafers W placed on the turntable 2 are arranged on the bottom surface of the recess 31. Note that in FIG. 3, a portion of the heater 33 is cut away to avoid complication.

[0014] The heaters 33 are arranged along concentric circles centered on the rotation center of the turntable 2, with four of the seven heaters 33 located inside the slits 32 and the other three located outside the slits 32. A shield 34 is provided to cover the heaters 33 and close the upper side of the recess 31 (see FIG. 1). A ring-shaped slit 34a is formed in the shield 34 so as to overlap the slit 32, and a support 41, described below, passes through the slit 34a. Exhaust ports 35 and 36, which exhaust air from the vacuum vessel 11, are open on the bottom surface of the vessel body 13 outside the recess 31. An exhaust mechanism (not shown), composed of a vacuum pump or the like, is connected to the exhaust ports 35 and 36.

[0015] Next, the turntable 2 will be described with reference to FIG. 4, which shows the front side of the turntable 2. Five circular recesses are formed on the surface of the turntable 2 along the direction of rotation of the turntable 2, and a circular wafer holder 24 is provided in each recess. A recess 25 is formed on the surface of the wafer holder 24, and a wafer W is stored horizontally in the recess 25. Therefore, the bottom surface of the recess 25 forms a mounting area (mounting surface) on which the wafer is placed. In this example, the height of the sidewall of the recess 25 is set to the same as the thickness of the wafer W, for example, 1 mm.

[0016] For example, three support columns 41 extend vertically downward from positions spaced apart from one another in the circumferential direction on the back surface of the turntable 2. As shown in FIG. 1, each support column 41 penetrates the bottom of the container body 13 via a slit 32 and is connected to a support ring 42, which is a connection portion provided below the container body 13 (see FIG. 4). This support ring 42 is formed along the rotation direction of the turntable 2 and is provided horizontally so as to be suspended from the container body 13 by the support columns 41, and rotates together with the turntable 2.

[0017] Furthermore, a rotation shaft 26, which is a rotation shaft for rotation, extends vertically downward from the lower center of wafer holder 24. The lower end of rotation shaft 26 penetrates turntable 2, penetrates the bottom of container body 13 via slit 32, and further penetrates support ring 42 and magnetic seal unit 20 provided below support ring 42, to be connected to rotation drive unit 27 for rotation. Magnetic seal unit 20 is composed of a bearing for rotatably supporting rotation shaft 26 with respect to support ring 42, and a magnetic seal (magnetic fluid seal) for sealing the gap around rotation shaft 26.

[0018] The magnetic seal is provided to prevent particles generated from the bearing, such as lubricating oil used in the bearing, from diffusing into the vacuum atmosphere outside the magnetic seal unit 20. Furthermore, since the rotating shaft 26 is supported by the bearing, the wafer holder 24 is slightly suspended above, for example, the turntable 2. Furthermore, the rotation drive unit 27 for self-rotation includes a motor and is provided below the support ring 42 so as to be supported by the support ring 42 via the magnetic seal unit 20, and the motor rotates the rotating shaft 26 around its axis. As the rotating shaft 26 is supported and rotated in this manner, the wafer holder 24 rotates, for example, counterclockwise in a plan view.

[0019] The turntable 2 rotates around a central axis extending vertically from the center of the table surface, thereby rotating the wafer W on the mounting surface of the wafer holder 24 around that central axis. The upper surface of the turntable 2 is the table surface, and the central axis 21 of the turntable 2 is an example of a first central axis extending vertically from the center of the table surface. The wafer holder 24 is an example of a mounting portion, and the upper surface of the wafer holder 24 (the bottom surface of the recess 25) is a mounting surface, and the rotation axis 26 of the wafer holder 24 is an example of a second central axis extending vertically from the center of the mounting surface of the mounting portion. Rotation of the wafer W on the mounting surface formed on part of the table surface around the first central axis, which is the rotation axis of the turntable 2, is also referred to as revolution of the wafer W or simply as revolution. Rotation of the wafer holder 24 around the second central axis extending vertically from the center of the mounting surface is also referred to as rotation of the wafer W or simply as rotation.

[0020] In the film forming apparatus 1, revolution and rotation occur in parallel during film formation on the wafer W. The rotation of the wafer W includes not only continuous rotation of the wafer W around its central axis, but also intermittent rotation around its center. The intermittent rotation also includes a case in which the rotation of the wafer W stops before rotating one or more times around the center, and then the rotation of the wafer W resumes.

[0021] In Fig. 4, the shield ring 44 is indicated by a chain line. The shield ring 44 is provided so as to close the slit in the container body 13 from the lower side of the container body 13 as shown in Fig. 1, and is configured to rotate together with the turntable 2. Therefore, the above-mentioned rotating shaft 26 and support column 41 are provided so as to pass through this shield ring 44. The shield ring 44 serves as a heat shield to prevent the rotation drive unit 27 from being exposed to each gas and from being excessively heated.

[0022] As shown in FIG. 1 , a lower wall 45 is formed below the vessel body 13. The lower wall 45 is concave in cross section and surrounds the support ring 42, the rotational drive unit 27, and the shield ring 44. The lower wall 45 is ring-shaped and extends in the direction of rotation of the turntable 2. Five charging mechanisms 46 (only one of which is shown in FIG. 1 ) are provided at the bottom of the lower wall 45, spaced apart from each other along the circumferential direction. When wafers W are not being processed, the turntable 2 is stationary so that the rotational drive units 27 are positioned directly below the charging mechanisms 46. Each charging mechanism 46 is positioned so that each rotational drive unit 27 can be charged by contactless power supply from the charging mechanisms 46. A gas supply path 47 opens into the space surrounded by the lower wall 45. A gas nozzle 48 is provided through the gas supply path 47 to supply N2 gas, for example, into the space surrounded by the lower wall 45 during processing of the wafers W, thereby purging the space. Although not shown in FIG. 1, for example, the space communicates with an exhaust path that connects exhaust ports 35, 36 with the above-mentioned exhaust mechanism (not shown), as will be shown later with an example, and even if particles are generated in the space, they are purged into this exhaust path by the N2 gas and removed.

[0023] A transfer port 37 for the wafer W and a gate valve 38 for opening and closing the transfer port 37 are provided in the side wall of the vessel body 13 (see FIG. 2), and the wafer W is transferred between the transfer mechanism that enters the vacuum vessel 11 via the transfer port 37 and the recessed portion 25. Specifically, through holes are formed in the bottom of the recessed portion 25, the bottom of the vessel body 13, and the turntable 2 at corresponding positions, and the tips of pins are configured to move up and down between above the recessed portion 25 and below the vessel body 13 via each through hole. The wafer W is transferred via these pins. The pins and the through holes in the various portions through which the pins pass are not shown in the drawing.

[0024] 2, a raw material gas nozzle 51, a separation gas nozzle 52, an oxidizing gas nozzle 53, a plasma generation gas nozzle 54, and a separation gas nozzle 55 are arranged on the turntable 2 in this order at intervals in the rotation direction of the turntable 2. Each of the gas nozzles 51 to 55 is formed in a rod shape extending horizontally along the diameter of the turntable 2 from the side wall toward the center of the vacuum chamber 11, and discharges gas downward from multiple discharge ports formed along the diameter. Each of the gas nozzles 51 to 55 is an example of a gas supply unit that supplies gas into the vacuum chamber 11.

[0025] The source gas nozzle 51, which constitutes the process gas supply mechanism, discharges the above-mentioned BTBAS (bisterial butyl amino silane) gas. The nozzle cover 57 covers the source gas nozzle 51 and is formed in a fan shape that spreads out from the source gas nozzle 51 toward both the upstream and downstream sides in the rotation direction of the turntable 2. The nozzle cover 57 serves to increase the concentration of the BTBAS gas below it and to enhance the adsorption of the BTBAS gas to the wafer W. The oxidizing gas nozzle 53 discharges the above-mentioned ozone gas. The separation gas nozzles 52 and 55 are gas nozzles that discharge N2 gas and are arranged to divide the fan-shaped convex portion 17 of the top plate 12 in the circumferential direction.

[0026] The plasma generation gas nozzle 54 discharges a plasma generation gas, for example, a mixture of argon (Ar) gas and oxygen (O2) gas. A fan-shaped opening is provided in the top plate 12 along the rotation direction of the turntable 2. A cup-shaped plasma generation section 61 made of a dielectric material such as quartz is provided to cover the opening (see FIG. 1). The plasma generation section 61 is located between the oxidizing gas nozzle 53 and the convex portion 17 as viewed in the rotation direction of the turntable 2. In FIG. 2, the location of the plasma generation section 61 is indicated by a dotted line. A protrusion 62 is provided on the underside of the plasma generation section 61 along the periphery of the plasma generation section 61. The tip of the plasma generation gas nozzle 54 penetrates the protrusion 62 from the outer periphery of the turntable 2 so that gas can be discharged into the area surrounded by the protrusion 62. The protrusions 62 have the role of preventing N2 gas, ozone gas, and BTBAS gas from entering below the plasma generating section 61, and preventing a decrease in the concentration of the plasma generating gas.

[0027] A recess is formed above the plasma generating unit 61, and a box-shaped Faraday shield 63 with an opening at the top is disposed in this recess. An antenna 65, which is made of a metal wire wound in a coil shape around a vertical axis, is provided on the bottom surface of the Faraday shield 63 via an insulating plate member 64, and a high-frequency power supply 66 is connected to the antenna 65. Slits 67 are formed on the bottom surface of the Faraday shield 63 to prevent the electric field component of the electromagnetic field generated in the antenna 65 from traveling downward when high-frequency waves are applied to the antenna 65, and to direct the magnetic field component downward. These slits 67 extend in a direction perpendicular to (intersecting) the winding direction of the antenna 65, and multiple slits 67 are formed along the winding direction of the antenna 65. With this configuration, when the high-frequency power supply 66 is turned on and high-frequency waves are applied to the antenna 65, the plasma generating gas supplied below the plasma generating unit 61 can be converted into plasma.

[0028] On the turntable 2, the area below the nozzle cover 57 of the source gas nozzle 51 is the adsorption area R1 where the source gas, BTBAS gas, is adsorbed, and the area below the oxidizing gas nozzle 53 is the oxidation area R2 where the BTBAS gas is oxidized by ozone gas. The area below the plasma generation section 61 is the plasma generation area R3 where the SiO2 film is modified by plasma. The areas below the convex portion 17 are separated into the adsorption area R1 and the oxidation area R2 by N2 gas discharged from the separation gas nozzles 52 and 55, forming separation areas D and D to prevent the source gas and the oxidizing gas from mixing.

[0029] The exhaust port 35 opens to the outside between the adsorption region R1 and the adjacent separation region D downstream of the adsorption region R1 in the rotation direction, and exhausts excess BTBAS gas. The exhaust port 36 opens to the outside near the boundary between the plasma formation region R3 and the adjacent separation region D downstream of the plasma formation region R3 in the rotation direction, and exhausts excess O gas and plasma generating gas. The exhaust ports 35, 36 also exhaust N gas supplied from each separation region D, the gas supply pipe 15 below the turntable 2, and the central region formation section C of the turntable 2.

[0030] The film forming apparatus 1 is provided with a control device 100, which is a computer that controls the operation of the entire apparatus (see FIG. 1). The control device 100 stores a program for executing a film forming process, as described below. The program sends control signals to each part of the film forming apparatus 1 to control the operation of each part. Specifically, the control signals control the amount of gas supplied from each gas nozzle 51-56, the temperature of the wafer W by the heater 33, the amount of N2 gas supplied from the gas supply pipe 15 and the central region forming section C, the rotation speed of the turntable 2, and the rotation speed of the wafer holder 24. The program controls these factors and is organized into steps to execute each process described below. The program is installed into the control device 100 from a storage medium such as a hard disk, a compact disk, a magneto-optical disk, a memory card, or a flexible disk.

[0031] In this film formation apparatus 1, the wafer W revolves around the turntable 2 as the turntable 2 rotates, thereby performing a film formation process. As described above, the wafer W rotates about its own axis due to the rotation of the wafer holder 24 in parallel with the rotation of the turntable 2. However, the rotation of the turntable 2 and the rotation of the wafer holder 24 may be synchronized. Specifically, the turntable 2 may rotate once from a state in which the wafer W is oriented in a first orientation at a predetermined position in the vacuum chamber 11, and when the turntable 2 rotates once and is again positioned at the predetermined position, the wafer W may rotate about its own axis at a rotation speed (rotation speed) such that the wafer W is oriented in a second orientation different from the first orientation. The rotation speed (unit: rpm) of the wafer W is set by the control device 100 based on parameters set by the operator on a specific setting screen, as will be described later.

[0032] [Control device] Next, an example of the hardware configuration and functional configuration of the control device 100 according to the embodiment will be described with reference to Fig. 5 and Fig. 6. As shown in Fig. 5, the control device 100 has a CPU (Central Processing Unit) 301, a ROM (Read Only Memory) 302, a RAM (Random Access Memory) 303, an I / O port 304, an operation panel 305, and an HDD (Hard Disk Drive) 306. Each part is connected by a bus B.

[0033] The CPU 301 controls the operation of the control device 100 based on programs stored in a storage device such as the HDD 306, parameter setting processes, recipes for performing film formation processes, etc. For example, the programs include a program for executing a control method for the film formation apparatus. The CPU 301 controls the film formation process for the wafer W placed on the turntable 2 based on the recipe.

[0034] The ROM 302 is configured by an EEPROM (Electrically Erasable Programmable ROM), a flash memory, a hard disk, etc., and is a storage medium that stores programs, recipes, etc. of the CPU 301. The RAM 303 functions as a work area for the CPU 301, etc.

[0035] The I / O port 304 acquires values ​​of various sensors that detect temperature, pressure, gas flow rate, etc. from various sensors attached to the film forming apparatus 1 and transmits them to the CPU 301. The I / O port 304 also outputs control signals output by the CPU 301 to each part of the film forming apparatus (rotary table 2, vacuum pump 640, etc.). The I / O port 304 is also connected to an operation panel 305 that enables an operator to operate the film forming apparatus 1.

[0036] The HDD 306 is an auxiliary storage device, and may store a recipe, which is information that defines the procedure of the film formation process, a program that executes a method of controlling the rotary table during idle time, and the like.

[0037] As shown in FIG. 6, the control device 100 includes a storage unit 101, a display control unit 103, a touch operation acceptance unit 104, and a process execution unit 105, as shown in an example of the functional configuration of FIG.

[0038] The display control unit 103 causes a setting screen for setting a parameter (hereinafter referred to as a "first parameter") for controlling the rotation of the wafer W to be displayed on a display operated by the operator. The display control unit 103 causes a setting screen for setting a parameter (hereinafter referred to as a "second parameter") for controlling the revolution of the wafer W to be displayed on an operation panel 305 operated by the operator.

[0039] The touch operation acceptance unit 104 accepts information input by the operator's touch operation on the setting screen for setting the first parameter as information on the first parameter, and stores the information in the rotation table 110 of the storage unit 101. The touch operation acceptance unit 104 accepts information input by the operator's touch operation on the setting screen for setting the second parameter as information on the second parameter, and stores the information in the revolution table 109 of the storage unit 101.

[0040] The display control unit 103 may display a setting screen for setting the first parameters according to the type of wafer W. In this case, the storage unit 101 stores the first parameters received from the setting screen for setting the first parameters according to the type of wafer W in separate rotation tables 110 for each type of wafer W.

[0041] This allows the first parameter to be easily set according to the type of wafer for each process wafer, dummy wafer, and monitor wafer. This enables rotation control according to the type of wafer based on the first parameter. The first parameter may also be changed depending on whether or not a wafer W is placed on the wafer holder 24. This allows for fine-tuned control, such as rotating the wafer holder 24 when a wafer W is placed on the wafer holder 24 based on the first parameter, and stopping the rotation of the wafer holder 24 when no wafer W is placed on the wafer holder 24.

[0042] Similarly, the display control unit 103 may display a setting screen for setting the second parameters according to the type of wafer W. In this case, the storage unit 101 stores the second parameters received from the setting screen for setting the second parameters according to the type of wafer W in a plurality of revolution tables 109 for each type of wafer W.

[0043] The process execution unit 105 controls the motor of the revolution rotation drive unit 22 for each step set in the recipe based on the second parameters stored in the revolution table 109, thereby controlling the revolution of the wafer W. The process execution unit 105 controls the motor of the rotation rotation drive unit 27 for each step set in the recipe based on the first parameters stored in the rotation table 110, thereby controlling the rotation of the wafer W. While controlling the rotation and revolution, the process execution unit 105 forms a film on the wafer W by controlling the gas flow rate, pressure, and other process conditions in accordance with the specified recipe so as to satisfy them.

[0044] The storage unit 101 stores a plurality of recipes (recipe A, recipe B, etc.) corresponding to the substrate processing to be performed by the film forming apparatus 1. FIG. 7 is a diagram showing an example of a recipe according to an embodiment. Recipe A displays the process conditions for each step, as well as the numbers 201 and 205 of the revolution table 109 and rotation table 110 to be used for each step. For example, in step 1, the revolution table "Table11" and rotation table "Table01" are specified.

[0045] In this example, the process execution unit 105 controls the revolution rotation drive unit 22 by referring to the second parameters stored in the revolution table "Table 11" according to recipe A, and rotates the turntable 2 at a predetermined rotation speed and in a predetermined direction. The process execution unit 105 controls the rotation rotation drive unit 27 by referring to the first parameters stored in "Table 01" or "Table 02" set for each rotation table step, and rotates the wafer holder 24 at a predetermined rotation speed and in a predetermined direction. While rotating and revolving the wafer W, the process execution unit 105 controls the process conditions according to recipe A to form a film on the wafer W. Accordingly, the motors of the revolution rotation drive unit 22 and the rotation rotation drive unit 27 are controlled by referring to the second parameters and the first parameters. As a result, the turntable 2 is rotated around the central axis 21, which is the first central axis, and the wafer holder 24 is rotated around the rotation axis 26, which is the second central axis. The process execution unit 105 controls these two rotations and supplies gas from the gas supply unit (gas nozzles 51-55) to a gas supply region on a part of the table surface, forming a film on the wafer W as it repeatedly passes through the gas supply region by revolving. The wafer W that repeatedly passes through the gas supply region rotates on its axis by rotating the wafer holder 24 while revolving. As the wafer W not only revolves but also rotates on its axis, gas is supplied uniformly onto the wafer W, which allows a film to be formed uniformly over the entire surface of the wafer W, thereby improving the film formation accuracy.

[0046] 8 shows an example of a setting screen for the first parameters. Display control unit 103 causes operation panel 305 to display a setting screen including a display of at least one of the first parameters for rotating wafer holder 24: rotation speed, rotation direction, startup speed, acceleration / deceleration time, rotation start angle, and operation start time. The operator can select the rotation table to be used in the process by pressing one of the buttons on display component 210 using the setting screen in FIG. 8.

[0047] The operator can set the first parameters for each slot 212 by touching the screen for each first parameter item 213 displayed below the display component 211 of the rotation motor setting table. The first parameters for each slot 212 are a rotation speed 215a, a rotation direction 215b, a starting speed 215c, an acceleration / deceleration time 215d, a rotation start angle 215e, and an operation start time 215f. However, the first parameters may include at least one of the rotation speed 215a, the rotation direction 215b, the starting speed 215c, the acceleration / deceleration time 215d, the rotation start angle 215e, and the operation start time 215f. The numerical values ​​set in the area 214 in FIG. 8 are the first parameter values ​​for each slot 212 for each first parameter item 213. The slot numbers are identification numbers assigned to each of the multiple wafer holders 24. While the film forming apparatus 1 shown in FIGS. 2 and 4 includes five wafer holders 24, the number is not limited to five and may be one or more. 8, six wafer holders 24 are provided, so the first parameters for wafer holders 24 in slots 1 to 6 are displayed.

[0048] The process execution unit 105 controls the rotation by referring to the first parameters of the rotation table set for each step of the recipe in Fig. 7. This allows the rotation of the wafer holder 24 to be controlled for each step by referring to the first parameters of the rotation table set on the setting screen shown in Fig. 8, thereby controlling the rotation of the wafer W. Because the first parameters are set for each step, it is possible to realize control such as gradually rotating the wafer holder 24 in step 1 of the recipe and fully rotating the wafer holder 24 in step 2.

[0049] In this manner, in the present disclosure, by providing the operator with a first parameter setting screen, the operator can easily set the first parameter indicating the control procedure for the motor of the rotation drive unit 27 for rotation for each step of the recipe. In addition, since the value of the first parameter for each slot can be set from the first parameter setting screen, the wafer holder 24 for each slot can be operated individually. This makes it easy to set parameters for forming a film on the wafer W while revolving and rotating the wafer W placed on the turntable 2.

[0050] In addition, the display control unit 103 may display a setting screen for the second parameter on the operation panel 305, which includes a display of at least one of the rotation speed and rotation direction when rotating the turntable 2, thereby making it easier to set the second parameter.

[0051] [Parameter setting process] 9 is a flowchart showing an example of a parameter setting process according to the embodiment. When an operator requests setting of a first parameter, the display control unit 103 displays a setting screen for the first parameter in step S1. As a result, for example, the setting screen shown in FIG. 8 is displayed.

[0052] Next, touch operation acceptance unit 104 accepts a touch operation on operation panel 305. When touch operation acceptance unit 104 accepts a touch operation on the continuous rotation item by the operator, in step S5, it accepts input of at least one of the rotation speed, rotation direction, start-up speed, and acceleration / deceleration time of each slot, and stores the input in rotation table 110 of memory unit 101.

[0053] If touch operation reception unit 104 receives a touch operation by the operator for the rotation start angle item, touch operation reception unit 104 determines in step S7 that a rotation start angle has been set. In step S9, input of the rotation start angle for each slot is received and stored in rotation table 110 of storage unit 101.

[0054] If the touch operation acceptance unit 104 accepts a touch operation for the operation start time by the operator, the touch operation acceptance unit 104 determines in step S11 that the operation start time is set. In step S13, the operation start time of each slot is accepted and stored in the rotation table 110 of the storage unit 101, and this process ends.

[0055] If the touch operation receiving unit 104 does not detect any touch operation, the process ends without setting the first parameter.

[0056] [Method for controlling a film forming apparatus] Next, a control method for the film forming apparatus executed by the film forming apparatus 1 using the set first parameters will be described with reference to Figs. 10 to 14. Fig. 10 is a flowchart showing an example of the control method for the film forming apparatus according to the embodiment. Fig. 11 is a flowchart showing an example of the control method (inter-process processing) for the film forming apparatus according to the embodiment. Figs. 12 to 14 are diagrams for explaining the control method of the present disclosure.

[0057] When this process starts, in step S21, the process execution unit 105 rotates the turntable 2 around the central axis 21 extending vertically from the center of the turntable 2 based on the second parameter set for the revolution table 109 in accordance with the recipe. This controls the revolution of the wafer W. For example, the rotation speed and rotation direction (clockwise or counterclockwise in plan view) of the turntable 2 are controlled based on the second parameter.

[0058] In step S23, the process execution unit 105 rotates the wafer holder 24 around the rotation axis 26 extending vertically from the center of the wafer holder 24 based on first parameters set in the rotation table 110 for each step in accordance with the recipe. This controls the rotation of the wafer W. For example, the process execution unit 105 controls the rotation speed and rotation direction of the wafer holder 24 based on the first parameters. In addition, the process execution unit 105 may control at least one of the startup speed, acceleration / deceleration time, rotation start angle, and operation start time based on the first parameters. Methods for controlling the parameters of the startup speed, acceleration / deceleration time, rotation start angle, and operation start time will be described later. Note that, for convenience, steps S21 and S23 have been described separately, but these steps may be executed simultaneously or in parallel.

[0059] Next, in step S25, the process execution unit 105 supplies desired gases from the gas nozzles 51 to 55 into the vacuum chamber 11 to form a film on the wafer W on the wafer holder 24. In step S27, the process execution unit 105 determines whether there is a next step. If it determines that there is a next step, in step S29, the process execution unit 105 determines whether to switch the rotation direction. If it determines that the rotation direction should be switched, in step S31, the process execution unit 105 decelerates and stops the rotation of the wafer holder 24 using the acceleration / deceleration time set in the first parameter of the previous step, then switches the rotation direction and accelerates the rotation of the wafer holder 24 using the acceleration / deceleration time of the current step, and returns to step S21. If it determines that there is no next step in step S27, the process execution unit 105 determines whether there is a next process in step S33. If it determines that there is no next process, the process ends.

[0060] If it is determined that there is a next process, the process proceeds to step S41 in FIG. 11, where the process execution unit 105 stops the rotation of the wafer holder 24 in each slot during the acceleration / deceleration time.

[0061] In step S43, the process execution unit 105 moves the wafer holder 24 in each slot to the origin position. In step S45, the process execution unit 105 moves (rotates) the wafer holder 24 in each slot from the origin position by the rotation start angle, and in step S47 returns to step S21, where it executes the next process by performing the processing from step S21 onwards. Note that in the present disclosure, an example has been shown in which each step in FIG. 11 is performed each time a process changes, but if one process is made up of multiple steps, each step in FIG. 11 may be performed each time a step changes. Alternatively, each step may be performed when a specific step among the multiple steps in one process starts.

[0062] 12 shows an example of the rotation of six wafer holders 24 indicated by slots 1 to 6 and the revolution of the turntable 2 by performing the processes of steps S21 and S23. In the control method according to this embodiment, the rotation of the six wafer holders 24 is controlled according to a rotation speed and direction that are arbitrarily set for each slot. Furthermore, the switching of the rotation direction can be controlled for each slot by performing the process of step S31.

[0063] The wafer holder 24 in the slot where the rotation speed is set to 0 (rpm) is moved to the origin. The movement of the origin is the same as the process in step S45 in FIG. 11, and will be described next.

[0064] Figure 13(a) corresponds to the processing of step S41 in Figure 11, Figure 13(b) corresponds to the processing of step S43, and Figure 13(c) corresponds to the processing of step S45. Figure 13(a) shows a state in which the rotation of the wafer holder 24 in each slot is stopped during the acceleration / deceleration time in the processing of step S41 in Figure 11. At this time, if the origin of each slot is indicated by a dashed line, the rotation position (position of the origin) is indefinite.

[0065] 13(b) shows the state in which the origin is moved and stopped at the start of or before the start of the next process in step S43. In this case, it moves and stops using the acceleration / deceleration time of the previous step. The position of the origin can be moved by photographing the marker attached to the wafer holder 24 of each slot with a camera and aligning the position of the photographed marker with a predetermined angle that indicates the position of the origin.

[0066] FIG. 13(c) shows the process of step S45 in which the wafer holder 24 in each slot is moved to the rotation start angle. In the example of FIG. 13(c), the rotation start angle is set to 45° and the wafer holder 24 is moved. The wafer holder 24 moves to the rotation start angle using the acceleration / deceleration time of the execution step and then stops. In this way, by stopping the wafer holders 24 in all slots at a specific angle and then executing the film formation process, better film formation results can be achieved.

[0067] 14 is a diagram showing an example of a control method using the operation start time as the first parameter. For example, in the example of FIG. 8, the operation start times of slots 1 to 6 are set differently. In FIG. 14, the wafer holders 24 in each slot are rotating clockwise while gas is being supplied from the gas supply units (gas nozzles 51 to 55, shower head) to a gas supply region Ar in a part of the table surface of the turntable 2.

[0068] The operation start time is set when a delay time is required before the wafer holder 24 starts to rotate. For example, if the turntable 2 stops at a desired revolution position, the gas is switched, and then the turntable 2 starts to rotate (revolve) at a desired rotation speed and direction, the wafer holder 24 in each slot will rotate (spin) after the operation start time has elapsed from that rotation time. This allows the start time of the wafer holder 24 spinning on its axis to be staggered for each slot.

[0069] The gas supply region Ar in FIG. 14 is a film formation area filled with gas. The wafer holder 24 is controlled to rotate on its axis when it begins to pass through the gas supply region Ar for each slot. By starting rotation of each slot at a time offset from the rotation of the turntable 2 based on the operation start time, the wafer holder 24 in each slot can start rotating on its axis at the dashed line (center line) P1 where it begins to pass through the gas supply region Ar. Note that the operation end time can also be set as the first parameter. In this case, it is also possible to end the rotation of the wafer holder 24 in each slot on its axis or start a stopping operation at the dashed line (center line) P2 where it finishes passing through the gas supply region Ar.

[0070] [Parameter setting process during maintenance] Next, the parameter setting process during maintenance will be described with reference to Fig. 15. Fig. 15 is a diagram showing an example of a setting screen for the first parameter during maintenance according to the embodiment.

[0071] When the operator requests the display of the first parameter setting screen during maintenance, the display control unit 103 displays the maintenance setting screen shown in Fig. 15. The setting of the first parameters using this setting screen is used when the operator wants to perform maintenance or an evaluation experiment while manually controlling the rotation of the wafer holder 24 in each slot.

[0072] Display component 310 allows the user to select the wafer holder 24 in the slot that is to be operated. Selection can be made either individually, which selects each of the wafer holders 24 in slots 1 to 6, or all at once, which selects all of the wafer holders 24.

[0073] The display component 312 can set the current angle to indicate the rotational position of the wafer holder 24 in slots 1 to 6. The current angles for slots 1 to 6 are set to d1 to d6, respectively. Using this parameter, the origins of slots 1 to 6 can be moved to angles d1 to d6 when maintenance begins.

[0074] The display components 313 to 316 are set during maintenance to control the rotation speed of the motor of the rotation drive unit 27. The rotation speed and acceleration / deceleration time at initialization and the rotation speed and acceleration / deceleration time at normal times can be set.

[0075] The display component 311 sets the relative movement amount in degrees to set how far the wafer holder 24 in each slot should be rotated from the current point in time.

[0076] Various settings are possible, such as automatically controlling the rotation speed of the motor of the rotation drive unit 27 for rotation in accordance with the rotation speed of the motor of the rotation drive unit 22 for revolution.

[0077] This allows the operation conditions of the wafer holders 24 in slots 1 to 6 to be changed using the first parameter setting screen during maintenance, allowing the wafer holders 24 to operate separately under, for example, six different conditions, enabling six types of evaluation experiments to be performed at once. This can be used not only during development of the film deposition apparatus 1, but also when starting up the film deposition apparatus 1.

[0078] As described above, the control device and control method for a film formation apparatus according to this embodiment facilitates the setting of parameters for film formation while rotating and revolving a substrate placed on a rotary table. Furthermore, the control method for a film formation apparatus enables control such as stopping the rotation of the wafer holder 24 at a predetermined timing to prevent the wafer W from jumping out of the wafer holder 24, for example, in a process involving a high gas flow rate.

[0079] The control device and control method for a film forming apparatus according to the presently disclosed embodiments should be considered to be illustrative in all respects and not restrictive. The embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The matters described in the above embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent. [Explanation of symbols]

[0080] 1 Film deposition equipment 2 Rotating Tables 11 Vacuum container 21 Center axis 22 Rotation drive unit for revolution 24 wafer holder 26 Rotation axis 27 Rotation drive unit 100 control device 103 Display control unit 104 Touch operation reception section 105 Process Execution Unit

Claims

1. 1. A display device that displays a setting screen that can be input by a user and shows details of substrate processing of a substrate processing apparatus including a vacuum vessel, a turntable rotatably provided inside the vacuum vessel, and a plurality of substrate placement units on which substrates are placed at positions away from the rotation center of the turntable, the substrate placement units moving with the rotation of the turntable, and the substrate placement units rotating relatively to the turntable, the plurality of mounting sections revolve with the rotation of the rotary table and rotate on their own axes with the rotation of each of the plurality of mounting sections; The setting screen is displaying screen information having a plurality of types of items for controlling the rotation of one of the placement units for each of the plurality of placement units, and providing a plurality of such screen information; and displaying the screen information selected based on the user's operation. Display device.

2. the setting screen displays separate screen information having a plurality of types of items for controlling the rotation of the mounting units during maintenance, for each of the mounting units; The display device according to claim 1 .

3. the other screen information allows a current angle to be set for each of the plurality of mounting units; The display device according to claim 2 .

4. the plurality of pieces of screen information display parameters of the rotation for each of a plurality of steps of the substrate processing; The display device according to claim 1 .

5. The plurality of types of items are a combination of a rotation speed, a rotation direction, a starting speed, an acceleration / deceleration time, a rotation start angle, and an operation start time when rotating the placement unit. The display device according to claim 1 .

6. the setting screen allows the plurality of types of items for each of the plurality of mounting units to be changed based on the type of the substrate; The display device according to claim 1 .

7. the setting screen displays a plurality of types of items for controlling the revolution of the rotary table; The display device according to claim 1 .

Images