High frequency component and method of manufacturing the same

Abstract

To provide a high frequency component having improved withstand voltage characteristics, and to provide a method of manufacturing the same.SOLUTION: The high-frequency component 10 includes a capacitor 15. The capacitor includes a first surface first conductive layer 311, a first surface first insulating layer 312 located on the first surface first conductive layer, and a first surface second conductive layer 321 located on the first surface first insulating layer. The first surface first insulating layer includes an inorganic material having a dielectric breakdown electric field of at least 6MV / cm or more, more preferably 8MV / cm or more. As the inorganic material of the first surface first insulating layer 312, silicon nitride such as SiN can be used.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] An embodiment of the present disclosure relates to a high-frequency component including a capacitor and a method for manufacturing the same. [Background technology]

[0002] In recent years, as integrated circuits, such as semiconductor memories, have become faster and more highly integrated, there has been a demand for smaller and broader bandwidth passive components used around the integrated circuits. For example, when a capacitor is used as a bypass capacitor to suppress fluctuations in power supply voltage, it is required to have a broad bandwidth in order to remove high-frequency noise superimposed on the power supply voltage. For example, Patent Document 1 proposes a thin-film capacitor including a first conductive layer, a high-dielectric-constant thin film provided on the first conductive layer, and a second conductive layer provided on the high-dielectric-constant thin film. In thin-film capacitors, a small, high-capacitance capacitor can be realized by using a high-dielectric-constant thin film with a high dielectric constant. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 6-89831 Summary of the Invention [Problem to be solved by the invention]

[0004] Conventional thin-film capacitors are primarily formed on silicon, as in semiconductor processes. Silicon has a certain degree of conductivity, making it difficult to increase the withstand voltage of conventional thin-film capacitors.

[0005] The embodiments of the present disclosure have been made in consideration of these points, and have an object to provide a high-frequency component having improved voltage resistance characteristics. [Means for solving the problem]

[0006] One embodiment of the present disclosure comprises a first surface first conductive layer, a first surface first insulating layer located on the first surface first conductive layer, a first surface second conductive layer located on the first surface first insulating layer, and a first surface second insulating layer located on the first surface first insulating layer and the first surface second conductive layer, wherein the first surface first insulating layer overlapping the first surface second conductive layer constitutes a capacitor together with the first surface first conductive layer and the first surface second conductive layer, and the first surface first insulating layer has a breakdown field of 6 MV / cm or more. the first-surface second insulating layer is located on the first-surface first insulating layer without overlapping the first-surface second conductive layer, the first-surface second insulating layer includes an organic material, the first-surface first insulating layer includes a first portion located on the top surface of the first-surface first conductive layer and a second portion connected to the first portion and located on a side surface of the first-surface first conductive layer, and the thickness of the second portion is smaller than the thickness of the first portion and is equal to or greater than ¼ of the thickness of the first portion.

[0007] One embodiment of the present disclosure includes a first-side first conductive layer, a first-side first insulating layer located on the first-side first conductive layer, a first-side second conductive layer located on the first-side first insulating layer, and a first-side second insulating layer located on the first-side first insulating layer and the first-side second conductive layer, wherein the first-side first insulating layer overlapping the first-side second conductive layer forms a capacitor together with the first-side first conductive layer and the first-side second conductive layer, the first-side first insulating layer includes an inorganic material having a breakdown field of 6 MV / cm or more, the first-side second insulating layer is located on the first-side first insulating layer at a position not overlapping the first-side second conductive layer, and the first-side second insulating layer includes an organic material, and the first-side first insulating layer includes a first portion located on an upper surface of the first-side first conductive layer and a second portion connected to the first portion and located on a side surface of the first-side first conductive layer, The side of the first surface first conductive layer includes an inclined portion having a shape that displaces inward as it moves away from the top surface in the thickness direction, and the inclined portion is at least partially exposed from the first surface first insulating layer, making it a high-frequency component.

[0008] In the high-frequency device according to one embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1×10 -12 A or below.

[0009] In the high-frequency device according to one embodiment of the present disclosure, the inorganic material of the first insulating layer on the first surface may include silicon nitride.

[0010] In the high-frequency device according to one embodiment of the present disclosure, the first surface first insulating layer may have a thickness of 50 nm or more and 400 nm or less.

[0011] In the high-frequency device according to the embodiment of the present disclosure, the first-surface first conductive layer may have a thickness of not less than 5 μm and not more than 20 μm.

[0012] A high-frequency component according to an embodiment of the present disclosure may include a first-side second insulating layer located on the first-side first insulating layer and the first-side second conductive layer. The first-side second insulating layer may be located on the first-side first insulating layer at a position not overlapping the first-side second conductive layer, and the first-side second insulating layer may include an organic material. The organic material of the first-side second insulating layer may have a dielectric loss tangent of 0.003 or less.

[0013] One embodiment of the present disclosure is a method for manufacturing a high-frequency component, comprising the steps of: forming a first-side first conductive layer; forming a first-side first insulating layer on the first-side first conductive layer, the first-side first insulating layer including an inorganic material having a breakdown field of 6 MV / cm or more; forming a first-side second conductive layer on the first-side first insulating layer; and forming a first-side second insulating layer on the first-side first insulating layer and on the first-side second conductive layer, wherein the first-side first conductive layer, the first-side first insulating layer, and the first-side second conductive layer form a capacitor, the first-side second insulating layer is located on the first-side first insulating layer without overlapping the first-side second conductive layer, the first-side second insulating layer includes an organic material, the first-side first insulating layer includes a first portion located on a top surface of the first-side first conductive layer and a second portion connected to the first portion and located on a side surface of the first-side first conductive layer, and the thickness of the second portion is smaller than the thickness of the first portion and is at least ¼ of the thickness of the first portion.

[0014] One embodiment of the present disclosure includes a step of forming a first-side first conductive layer, a step of forming a first-side first insulating layer on the first-side first conductive layer, the first-side first insulating layer including an inorganic material having a breakdown field of 6 MV / cm or more, a step of forming a first-side second conductive layer on the first-side first insulating layer, and a step of forming a first-side second insulating layer on the first-side first insulating layer and the first-side second conductive layer, wherein the first-side first conductive layer, the first-side first insulating layer, and the first-side second conductive layer constitute a capacitor, and the first-side second insulating layer a first-side insulating layer located on the first-side first insulating layer without overlapping a first insulating layer, the first-side second insulating layer including an organic material, the first-side first insulating layer including a first portion located on the top surface of the first-side first conductive layer and a second portion connected to the first portion and located on a side surface of the first-side first conductive layer, the side surface of the first-side first conductive layer including an inclined portion having a shape that displaces inward with increasing distance from the top surface in a thickness direction, and the inclined portion being at least partially exposed from the first-side first insulating layer.

[0015] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1×10-12 A or below.

[0016] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the inorganic material of the first insulating layer on the first surface may include silicon nitride.

[0017] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the first-surface first insulating layer may have a thickness of 50 nm or more and 400 nm or less.

[0018] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the first-surface first conductive layer may have a thickness of 5 μm or more and 20 μm or less.

[0019] The method for manufacturing a high-frequency component according to an embodiment of the present disclosure may further include a surface treatment step of exposing the surface of the first-surface first conductive layer to NH3 plasma prior to the step of forming the first-surface first insulating layer.

[0020] A method for manufacturing a high-frequency component according to an embodiment of the present disclosure may include forming a first-side second insulating layer on the first-side first insulating layer and the first-side second conductive layer. The first-side second insulating layer may be located on the first-side first insulating layer at a position not overlapping the first-side second conductive layer, and the first-side second insulating layer may include an organic material. The organic material of the first-side second insulating layer may have a dielectric loss tangent of 0.003 or less. [Effects of the Invention]

[0021] According to the embodiments of the present disclosure, it is possible to provide a high-frequency component having improved voltage resistance characteristics. [Brief explanation of the drawings]

[0022] [Figure 1] 1 is a cross-sectional view showing a high-frequency component according to an embodiment of the present invention; [Figure 2] 2 is an enlarged cross-sectional view showing the high-frequency device of FIG. 1. [Figure 3] FIG. 2 is a plan view showing the high-frequency component. [Figure 4] 1A to 1C are diagrams illustrating a manufacturing process of a high-frequency component. [Figure 5] 1A to 1C are diagrams illustrating a manufacturing process of a high-frequency component. [Figure 6] 1A to 1C are diagrams illustrating a manufacturing process of a high-frequency component. [Figure 7] 1A to 1C are diagrams illustrating a manufacturing process of a high-frequency component. [Figure 8] 1A to 1C are diagrams illustrating a manufacturing process of a high-frequency component. [Figure 9] 1A to 1C are diagrams illustrating a manufacturing process of a high-frequency component. [Figure 10] 1A to 1C are diagrams illustrating a manufacturing process of a high-frequency component. [Figure 11] 1A to 1C are diagrams illustrating a manufacturing process of a high-frequency component. [Figure 12] 1A to 1C are diagrams illustrating a manufacturing process of a high-frequency component. [Figure 13] 1A to 1C are diagrams illustrating a manufacturing process of a high-frequency component. [Figure 14] 1A to 1C are diagrams illustrating a manufacturing process of a high-frequency component. [Figure 15] 1A to 1C are diagrams illustrating a manufacturing process of a high-frequency component. [Figure 16] FIG. 10 is a cross-sectional view showing a high-frequency component according to a modified example. [Figure 17] FIG. 10 is an enlarged plan view showing a capacitor of a high-frequency device according to a second modified example. [Figure 18] 18 is a cross-sectional view of the capacitor of FIG. 17 taken along line BB. [Figure 19] 10A to 10C are diagrams illustrating a manufacturing process for a high-frequency device according to a second modified example. [Figure 20] 10A to 10C are diagrams illustrating a manufacturing process for a high-frequency device according to a second modified example. [Figure 21] 10A to 10C are diagrams illustrating a manufacturing process for a high-frequency device according to a second modified example. [Figure 22] 10A to 10C are diagrams illustrating a manufacturing process for a high-frequency device according to a second modified example. [Figure 23] FIG. 10 is a cross-sectional view showing an application example of a capacitor of a high-frequency device according to a second modified example. DETAILED DESCRIPTION OF THE INVENTION

[0023] The configuration of a high-frequency component and a manufacturing method thereof according to an embodiment of the present disclosure will be described in detail below with reference to the drawings. Note that the following embodiments are merely examples of the present disclosure, and the present disclosure should not be construed as being limited to these embodiments. Furthermore, in this specification, terms such as "substrate," "base material," "sheet," and "film" are not distinguished from one another solely based on differences in nomenclature. For example, the terms "substrate" and "base material" encompass concepts that could be called sheets or films. Furthermore, terms used in this specification that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," as well as values ​​of length and angle, are not limited to their strict meanings but are interpreted to encompass a range within which similar functions can be expected. In the drawings referenced in this embodiment, identical or similar symbols are used to designate identical or similarly functional components, and repeated explanations may be omitted. Also, for convenience of explanation, the dimensional ratios in the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0024] High-frequency components Hereinafter, an embodiment of the present disclosure will be described. First, the configuration of a high-frequency component 10 according to the present embodiment will be described with reference to Figs. 1 to 3. Fig. 1 is a cross-sectional view showing the high-frequency component 10. Fig. 2 is an enlarged cross-sectional view showing the high-frequency component 10 of Fig. 1. Fig. 3 is a plan view showing the high-frequency component 10. Fig. 1 corresponds to a cross-sectional view of the high-frequency component 10 shown in Fig. 3 taken along line AA. Note that a high-frequency component refers to an electronic component that can be used for high-frequency signals of 0.1 GHz or higher.

[0025] The high-frequency component 10 includes a substrate 12, a capacitor 15, and an inductor 16. The capacitor 15 is formed from a part of a first wiring structure 30. The inductor 16 is formed from a part of the first wiring structure 30, a through electrode 22, and a part of a second wiring structure 40. Each component of the high-frequency component 10 will be described below.

[0026] (substrate) The substrate 12 includes a first surface 13 and a second surface 14 located on the opposite side of the first surface 13. The substrate 12 also has a plurality of through holes 20 extending from the first surface 13 to the second surface 14.

[0027] The substrate 12 includes glass. Examples of the glass used for the substrate 12 include alkali-free glass. The alkali-free glass is glass that does not contain alkali components such as sodium or potassium. The alkali-free glass contains, for example, boric acid instead of an alkali component. The alkali-free glass also contains an alkaline earth metal oxide such as calcium oxide or barium oxide. Examples of alkali-free glass include EN-A1 manufactured by Asahi Glass Co., Ltd. and Eagle XG manufactured by Corning Co., Ltd. The thickness of the substrate 12 is, for example, 0.25 mm or more and 0.45 mm or less. When the substrate 12 includes glass, the insulating properties of the substrate 12 can be improved compared to when the substrate 12 is made of silicon, thereby improving the voltage resistance characteristics of the capacitor 15 located on the substrate 12.

[0028] 1, the sidewall 21 of the through hole 20 may extend along the normal direction of the first surface 13 of the substrate 12. Alternatively, although not shown, the sidewall 21 may extend in a direction deviated from the normal direction of the first surface 13 of the substrate 12, or a portion of the sidewall 21 may be curved.

[0029] The length of through hole 20, i.e., the dimension of through hole 20 in the normal direction to first surface 13, is equal to the thickness of substrate 12. The width of through hole 20, i.e., the dimension S of through hole 20 in the planar direction of first surface 13 (see FIG. 4), is, for example, 40 μm or more and 150 μm or less. Furthermore, the ratio of the length to the width of through hole 20, i.e., the aspect ratio of through hole 20, is, for example, 4 or more and 10 or less.

[0030] (Through electrode) The through electrode 22 is a conductive member that is at least partially located inside the through hole 20. In this embodiment, the thickness of the through electrode 22 is smaller than the width of the through hole 20, and therefore there is a space inside the through electrode 22 where the through electrode 22 is not present. In other words, the through electrode 22 is a so-called conformal via.

[0031] As long as the through electrode 22 is conductive, the method for forming the through electrode 22 is not particularly limited. For example, the through electrode 22 may be formed by a physical film formation method such as a vapor deposition method or a sputtering method, or may be formed by a chemical film formation method or a plating method. The through electrode 22 may be composed of a single conductive layer, or may include multiple conductive layers. Here, as shown in FIG. 2 , an example will be described in which the through electrode 22 includes an adhesion layer 361, a seed layer 362, and a plating layer 363, which are arranged in this order from the sidewall 21 side of the through hole 20 toward the center of the through hole 20.

[0032] The adhesion layer 361 is a layer formed as needed between other components of the through electrode 22, such as the seed layer 362 and the plating layer 363, and the sidewall 21 of the through hole 20 in the substrate 12. The adhesion layer 361 has higher adhesion to the substrate 12 than other components of the through electrode 22, such as the seed layer 362 and the plating layer 363. The adhesion layer 361 may also serve to suppress diffusion of metal elements in other components of the through electrode 22, such as the seed layer 362 and the plating layer 363, into the interior of the substrate 12 via the sidewall 21 of the through hole 20. When the seed layer 362 or the plating layer 363 contains copper, the adhesion layer 361 may be made of, for example, titanium, titanium nitride, molybdenum, molybdenum nitride, tantalum, tantalum nitride, or a laminate of these materials. The adhesion layer 361 may also be made of a conductive material that has high adhesion to the substrate 12. For example, titanium, molybdenum, tungsten, tantalum, nickel, chromium, aluminum, compounds thereof, alloys thereof, or laminates thereof can be used as the material of the adhesion layer 361. The thickness of the adhesion layer 361 is, for example, 10 nm or more and 1 μm or less. The adhesion layer 361 is formed by a physical film formation method such as vapor deposition or sputtering.

[0033] The seed layer 362 is a conductive layer that serves as a base for depositing metal ions in a plating solution to grow the plating layer 363 during the electrolytic plating process for forming the plating layer 363 by electrolytic plating. The seed layer 362 may be made of the same metal material as the plating layer 363, such as copper. The seed layer 362 has a thickness of, for example, 100 nm or more and 3 μm or less. The seed layer 362 is formed, for example, by electroless plating.

[0034] Although not shown, a layer that can serve as both an adhesive layer and a seed layer may be provided between the sidewall 21 of the through hole 20 and the plating layer 363.

[0035] The plating layer 363 is a conductive layer formed by plating processing. Materials that can be used to form the plating layer 363 include metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, and chromium, alloys using these metals, and laminates of these metals.

[0036] As shown in FIG. 1 , the high-frequency component 10 may include an organic layer 26 located closer to the center of the through hole 20 than the through electrode 22. Note that "closer to the center" means that, inside the through hole 20, the distance between the organic layer 26 and the sidewall 21 is greater than the distance between the through electrode 22 and the sidewall 21. The organic layer 26 includes an organic material having a dielectric loss tangent of 0.003 or less, preferably 0.002 or less, and even more preferably 0.001 or less. Examples of organic materials that can be used for the organic layer 26 include polyimide and epoxy. By using an organic material with a small dielectric loss tangent for the organic layer 26, it is possible to prevent a portion of the electrical signal that should pass through the capacitor 15 or inductor 16 from passing through the organic layer 26. This allows the bandwidth of the high-frequency component 10 including the capacitor 15 or inductor 16 to be broadened toward the high-frequency side.

[0037] (1st wiring structure part) 1, the first wiring structure 30 includes a first-surface first wiring layer 31 located on the first surface 13 of the substrate 12, a first-surface second wiring layer 32 located on the first-surface first wiring layer 31, and a first-surface third wiring layer 33 located on the first-surface second wiring layer 32. The configurations of the first-surface first wiring layer 31, the first-surface second wiring layer 32, and the first-surface third wiring layer 33 will be described below.

[0038] [First surface, first wiring layer] As shown in FIG. 1 , the first-surface first wiring layer 31 has a first-surface first conductive layer 311 and a first-surface first insulating layer 312. The first-surface first conductive layer 311 is a conductive layer located on the first surface 13 of the substrate 12. The first-surface first conductive layer 311 may be connected to the through electrode 22. Similarly to the through electrode 22, the first-surface first conductive layer 311 may include an adhesion layer 361, a seed layer 362, and a plating layer 363 stacked in this order on the first surface 13 of the substrate 12. The material constituting the first-surface first conductive layer 311 is the same as the material constituting the through electrode 22. The thickness of the first-surface first conductive layer 311 is, for example, 5 μm or more and 20 μm or less.

[0039] The first-surface first insulating layer 312 is an insulating layer that is at least partially located on the first-surface first conductive layer 311. The first-surface first insulating layer 312 may partially cover the first-surface first conductive layer 311. In this case, the first-surface first insulating layer 312 may be in contact with not only the first-surface first conductive layer 311 but also the first surface 13 of the substrate 12. Note that "covering" means that the end 311e of the first-surface first conductive layer 311 and the first-surface first insulating layer 312 at least partially overlap when the high-frequency component 10 is viewed along the normal direction to the first surface 13 of the substrate 12, as shown in FIG. 3 .

[0040] The first-surface first insulating layer 312 contains an inorganic material having a dielectric breakdown field of at least 6 MV / cm or more, more preferably 8 MV / cm or more. Silicon nitrides such as SiN can be used as the inorganic material for the first-surface first insulating layer 312. Other examples of the inorganic material for the first-surface first insulating layer 312 include silicon oxide, aluminum oxide, and tantalum pentoxide. This can further improve the withstand voltage characteristics of the capacitor 15 including the first-surface first insulating layer 312. A method for measuring the dielectric breakdown field will be described later in the examples. The inorganic material for the first-surface first insulating layer 312 has a relative dielectric constant of, for example, 3 to 50. The thickness of the first-surface first insulating layer 312 is, for example, 50 to 400 nm.

[0041] Preferably, the leakage current in the inorganic material of the first surface first insulating layer 312 is less than 1×10 -12 A or less, which can further improve the electrical characteristics of the capacitor 15 including the first-surface first insulating layer 312. The method for measuring the leakage current will be described later in the examples.

[0042] [First surface second wiring layer] The first-surface second wiring layer 32 has a first-surface second conductive layer 321 and a first-surface second insulating layer 322. The first-surface second conductive layer 321 is a conductive layer located on the first-surface first insulating layer 312. As shown in FIG. 1 , the first-surface first conductive layer 311, the first-surface first insulating layer 312 located on the first-surface first conductive layer 311, and the first-surface second conductive layer 321 located on the first-surface first insulating layer 312 form a capacitor 15.

[0043] Like the through electrode 22 and the first-surface first conductive layer 311, the first-surface second conductive layer 321 may include an adhesion layer, a seed layer, and a plating layer laminated in this order on the first-surface first insulating layer 312. The material constituting the first-surface second conductive layer 321 is the same as the material constituting the through electrode 22 and the first-surface first conductive layer 311. The thickness of the first-surface second conductive layer 321 is, for example, not less than 5 μm and not more than 20 μm.

[0044] The first-surface second insulating layer 322 is an insulating layer located on the first-surface first insulating layer 312 and the first-surface second conductive layer 321. The first-surface second insulating layer 322 contains an organic material having a dielectric dissipation factor of 0.003 or less, preferably 0.002 or less, and even more preferably 0.001 or less. Examples of organic materials that can be used for the first-surface second insulating layer 322 include polyimide and epoxy. By using an organic material with a small dielectric dissipation factor for the first-surface second insulating layer 322, it is possible to prevent electrical signals that should pass through the capacitor 15 or inductor 16 from passing through the first-surface second insulating layer 322. This allows the bandwidth of the high-frequency device 10 including the capacitor 15 or inductor 16 to be expanded toward the high-frequency side.

[0045] The relative dielectric constant of the organic material of first-side second insulating layer 322 is preferably 3.4 or less. The transmission loss of the organic material of first-side second insulating layer 322 at 5 GHz is preferably 0.07 dB or less, more preferably 0.06 dB or less, and even more preferably 0.05 dB or less.

[0046] [First surface third wiring layer] The first-surface third wiring layer 33 has a first-surface third conductive layer 331 and a first-surface third insulating layer 332. The first-surface third conductive layer 331 is a conductive layer located on the first-surface first conductive layer 311 or the first-surface second conductive layer 321. In the example shown in FIG. 1 , the first-surface third conductive layer 331 includes a portion connected to the first-surface first conductive layer 311, which is one electrode of the capacitor 15, and a portion connected to the first-surface second conductive layer 321, which is the other electrode of the capacitor 15.

[0047] The first-surface third conductive layer 331 may include an adhesion layer, a seed layer, and a plating layer stacked in this order, similar to the through electrode 22 and the first-surface first conductive layer 311. The material constituting the first-surface third conductive layer 331 is the same as the material constituting the through electrode 22 and the first-surface first conductive layer 311.

[0048] First-surface third insulating layer 332 is an insulating layer located on first-surface second insulating layer 322 and first-surface third conductive layer 331. Like first-surface second insulating layer 322, first-surface third insulating layer 332 contains an organic material having a dielectric loss tangent of 0.003 or less, more preferably 0.002 or less, and even more preferably 0.001 or less. Like first-surface second insulating layer 322, the organic material for first-surface third insulating layer 332 can be polyimide, epoxy, or the like.

[0049] (Second wiring structure) 1, the second wiring structure portion 40 includes a second-surface first wiring layer 41 located on the second surface 14 of the substrate 12. The second-surface first wiring layer 41 has a second-surface first conductive layer 411 and a second-surface first insulating layer 412.

[0050] The second-surface first conductive layer 411 is a conductive layer located on the second surface 14 of the substrate 12. The second-surface first conductive layer 411 may be connected to the through electrode 22. Similarly to the through electrode 22 and the first-surface first conductive layer 311, the second-surface first conductive layer 411 may include an adhesion layer 361, a seed layer 362, and a plating layer 363 laminated in this order on the second surface 14 of the substrate 12. The material constituting the second-surface first conductive layer 411 is the same as the material constituting the through electrode 22 and the first-surface first conductive layer 311. The thickness of the second-surface first conductive layer 411 is, for example, 5 μm or more and 20 μm or less.

[0051] As shown in Figures 1 and 3, the inductor 16 is formed by the second surface first conductive layer 411, the through electrode 22 connected to the second surface first conductive layer 411, and the first surface first conductive layer 311 connected to the through electrode 22.

[0052] Second-surface first insulating layer 412 is an insulating layer located on second-surface first conductive layer 411 and on second surface 14 of substrate 12. Similar to first-surface second insulating layer 322 and first-surface third insulating layer 332, second-surface first insulating layer 412 contains an organic material having a dielectric loss tangent of 0.003 or less, more preferably 0.002 or less, and even more preferably 0.001 or less. Similar to first-surface second insulating layer 322 and first-surface third insulating layer 332, the organic material for second-surface first insulating layer 412 can be polyimide, epoxy, or the like.

[0053] High-frequency component manufacturing method An example of a method for manufacturing the high-frequency component 10 will now be described with reference to FIGS.

[0054] (Through hole formation process) First, the substrate 12 is prepared. Next, a resist layer is provided on at least one of the first surface 13 and the second surface 14. After that, an opening is provided in the resist layer at a position corresponding to the through hole 20. Next, the substrate 12 is processed at the opening in the resist layer, thereby forming the through hole 20 in the substrate 12 as shown in FIG. 4. Methods that can be used to process the substrate 12 include dry etching methods such as reactive ion etching and deep reactive ion etching, and wet etching.

[0055] The through holes 20 may be formed in the substrate 12 by irradiating the substrate 12 with a laser. In this case, a resist layer does not need to be provided. The laser used for laser processing may be an excimer laser, an Nd:YAG laser, a femtosecond laser, or the like. When an Nd:YAG laser is used, a fundamental wave with a wavelength of 1064 nm, a second harmonic with a wavelength of 532 nm, or a third harmonic with a wavelength of 355 nm may be used.

[0056] Laser irradiation and wet etching can also be combined as appropriate. Specifically, first, an altered layer is formed in the region of the substrate 12 where the through-hole 20 is to be formed by laser irradiation. Next, the substrate 12 is immersed in hydrogen fluoride or the like to etch the altered layer. In this way, the through-hole 20 can be formed in the substrate 12.

[0057] Alternatively, the through holes 20 may be formed in the substrate 12 by blasting the substrate 12 with an abrasive material.

[0058] (Through electrode formation process) Next, the through electrode 22 is formed on the side wall 21 of the through hole 20. In this embodiment, an example will be described in which the first surface first conductive layer 311 and the second surface first conductive layer 411 are formed simultaneously with the through electrode 22.

[0059] 5, an adhesion layer 361 is formed on the first surface 13, the second surface 14, and the sidewalls 21 of the substrate 12 by a physical film formation method such as vapor deposition or sputtering. Subsequently, a seed layer 362 is formed on the adhesion layer 361 by electroless plating. Thereafter, a step of annealing the adhesion layer 361 and the seed layer 362 may be performed.

[0060] The method for forming the adhesion layer 361 and the seed layer 362 is not limited to the above-described method. For example, the adhesion layer 361 containing zinc oxide or the like may be formed by a sol-gel method, and then the seed layer 362 may be formed on the adhesion layer 361 by electroless plating. Furthermore, both the adhesion layer 361 and the seed layer 362 may be formed by a physical film formation method such as vapor deposition or sputtering.

[0061] Next, as shown in FIG. 6, a resist layer 37 is partially formed on the seed layer 362. Subsequently, as shown in FIG. 7, a plating layer 363 is formed by electrolytic plating on the seed layer 362 that is not covered by the resist layer 37. Thereafter, as shown in FIG. 8, the resist layer 37 is removed. Furthermore, the portions of the adhesion layer 361 and the seed layer 362 that were covered by the resist layer 37 are removed by, for example, wet etching. In this manner, the through electrode 22, the first-surface first conductive layer 311, and the second-surface first conductive layer 411 can be formed. This allows for the formation of an inductor 16 that includes the second-surface first conductive layer 411, the through electrode 22 connected to the second-surface first conductive layer 411, and the first-surface first conductive layer 311 connected to the through electrode 22. A step of annealing the plating layer 363 may be performed.

[0062] (Surface treatment process) Next, a surface treatment step may be performed in which the surface of first-side first conductive layer 311 is exposed to plasma such as NH3 plasma. This makes it possible to remove oxides on the surface of first-side first conductive layer 311. For example, if first-side first conductive layer 311 contains copper, copper oxide on the surface of first-side first conductive layer 311 can be removed. This makes it possible to improve adhesion between first-side first conductive layer 311 and first-side first insulating layer 312 formed on first-side first conductive layer 311.

[0063] (First surface first insulating layer forming process) Next, a first-surface first insulating layer 312 is formed on the first-surface first conductive layer 311. First, as shown in FIG. 9, a resist layer 38 is formed partially on the first-surface first conductive layer 311. Then, as shown in FIG. 10, the first-surface first insulating layer 312 is formed on the first-surface first conductive layer 311 and the portion of the first surface 13 of the substrate 12 that is not covered by the resist layer 38. For example, plasma CVD, sputtering, or the like can be used as a method for forming the first-surface first insulating layer 312. Thereafter, as shown in FIG. 11, the resist layer 38 is removed. In this manner, the first-surface first insulating layer 312 can be formed partially on the first-surface first conductive layer 311.

[0064] (First surface second conductive layer forming process) 12, first-surface second conductive layer 321 is formed on first-surface first insulating layer 312. This allows capacitor 15 to be formed, which includes first-surface first conductive layer 311, first-surface first insulating layer 312 on first-surface first conductive layer 311, and first-surface second conductive layer 321 on first-surface first insulating layer 312. The process of forming first-surface second conductive layer 321 is similar to the process of forming first-surface first conductive layer 311, and therefore description thereof will be omitted.

[0065] (First surface second insulating layer forming process) 13, a first-surface second insulating layer 322 is formed on the first-surface first insulating layer 312 and the first-surface second conductive layer 321. In addition, a second-surface first insulating layer 412 is formed on the second surface 14 of the substrate 12 and the second-surface first conductive layer 411.

[0066] For example, first, a second-surface side film having a photosensitive layer containing an organic material and a base material is attached to the second surface 14 side of the substrate 12. Next, the second-surface side film is subjected to an exposure process and a development process. As a result, a second-surface first insulating layer 412 made of the photosensitive layer of the second-surface side film can be formed on the second surface 14 side of the substrate 12. Thereafter, a first-surface side film having a photosensitive layer containing an organic material and a base material is attached to the first surface 13 side of the substrate 12. Next, the first-surface side film is subjected to an exposure process and a development process so as to form the opening 323 shown in Fig. 14. This makes it possible to obtain a first-surface second insulating layer 322 made of the photosensitive layer of the first-surface side film, with the opening 323 formed in a portion on the first-surface second conductive layer 321 and a portion on the first-surface first conductive layer 311.

[0067] 13 , the organic layer 26 filling the through hole 20 may be formed by providing a part of the first-surface second insulating layer 322 or a part of the second-surface first insulating layer 412 inside the through hole 20. For example, by pushing the second-surface side film or the first-surface side film described above into the through hole 20, the organic layer 26 can be formed inside the through hole 20 simultaneously with the first-surface second insulating layer 322 or the second-surface first insulating layer 412. Note that the organic layer 26 may be formed in a separate process from the second-surface first insulating layer 412 or the first-surface second insulating layer 322.

[0068] The method for forming the second-surface first insulating layer 412 and the first-surface second insulating layer 322 is not limited to the method using a film. For example, first, a liquid containing an organic material such as polyimide is applied by a method such as spin coating, and then dried to form an organic layer. Subsequently, the organic layer can be subjected to an exposure process and a development process to form the second-surface first insulating layer 412 and the first-surface second insulating layer 322.

[0069] (First surface third conductive layer forming process) 14 , a portion of first-surface first insulating layer 312 that overlaps with opening 323 in first-surface second insulating layer 322 is etched to form an opening in first-surface first insulating layer 312. Subsequently, first-surface third conductive layer 331 is formed, which is connected to first-surface first conductive layer 311 or first-surface second conductive layer 321 via opening 323 in first-surface second insulating layer 322 and the opening in first-surface first insulating layer 312. The process of forming first-surface third conductive layer 331 is similar to the process of forming first-surface first conductive layer 311, and therefore a description thereof will be omitted.

[0070] (First surface third insulating layer forming process) Thereafter, the first-side third insulating layer 332 is formed partially on the first-side second insulating layer 322 and the first-side third conductive layer 331. This makes it possible to obtain the high-frequency component 10 shown in FIG. 1. The method for forming the first-side third insulating layer 332 is not particularly limited. As with the first-side second insulating layer 322, the first-side third insulating layer 332 can be formed using a film or liquid containing an organic material.

[0071] (Action of high frequency components) The operation of the high-frequency component 10 according to this embodiment will now be described.

[0072] In this embodiment, the substrate 12 of the high-frequency component 10 includes glass. Glass has higher insulating properties than silicon, which is used as the substrate for conventional high-frequency components. This prevents a portion of the high-frequency signal passing through the capacitor 15 or inductor 16 from passing through the substrate 12. This allows the bandwidth of the capacitor 15 or inductor 16 to be expanded toward the high-frequency side. Furthermore, the withstand voltage characteristics of the capacitor 15 or inductor 16 can be improved.

[0073] In the present embodiment, first-surface first insulating layer 312 constituting capacitor 15 contains an inorganic material having a breakdown field of 6 MV / cm or more, which can further improve the withstand voltage characteristics of capacitor 15. Furthermore, by making first-surface first insulating layer 312 70 nm or more in thickness, the withstand voltage characteristics of capacitor 15 can further be improved.

[0074] Furthermore, in this embodiment, the organic materials contained in the first-surface second insulating layer 322, the first-surface third insulating layer 332, the second-surface first insulating layer 412, the organic layer 26, etc. have a dielectric loss tangent of 0.003 or less. This makes it possible to prevent a portion of the high-frequency signal passing through the capacitor 15 or the inductor 16 from passing through the substrate 12. This allows the bandwidth of the capacitor 15 or the inductor 16 to be further expanded toward the high-frequency side.

[0075] Furthermore, in this embodiment, the first-surface first conductive layer 311, the through electrode 22, and the second-surface first conductive layer 411 that constitute the capacitor 15 and the inductor 16 have a thickness of 5 μm or more. Therefore, compared to when a capacitor or an inductor is made of a thin-film conductive layer created by a semiconductor process, the loss that occurs in the conductive layer can be reduced. This also makes it possible to widen the bandwidth of the capacitor 15 and the inductor 16 toward the high frequency side.

[0076] Furthermore, in this embodiment, a surface treatment step of exposing the surface of first-surface first conductive layer 311 to NH3 plasma is performed before performing the step of forming first-surface first insulating layer 312 on first-surface first conductive layer 311. This can improve adhesion between first-surface first conductive layer 311 and first-surface first insulating layer 312.

[0077] It should be noted that various modifications can be made to the above-described embodiment. Below, modifications will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for the corresponding parts in the above-described embodiment, and duplicated explanations will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in the modified embodiment, the explanations thereof may be omitted.

[0078] (First Modification) Fig. 15 is a cross-sectional view showing a high-frequency component 10 according to a first modification. As shown in Fig. 15, the through-hole 20 in the substrate 12 of the high-frequency component 10 may have a shape whose width decreases from the first surface 13 and the second surface 14 of the substrate 12 toward the center in the thickness direction of the substrate 12.

[0079] (Second Modification) In the above-described embodiment, an example has been described in which the first-surface first insulating layer 312 of the capacitor 15 partially covers the first-surface first conductive layer 311. In this modification, an example of the structure of the first-surface first conductive layer 311 and the first-surface first insulating layer 312 in the case in which the first-surface first insulating layer 312 of the capacitor 15 partially covers the first-surface first conductive layer 311 will be specifically described with reference to FIGS.

[0080] Fig. 17 is an enlarged plan view of capacitor 15 of high-frequency device 10 according to this modification. Fig. 18 is a cross-sectional view of capacitor 15 of Fig. 17 taken along line BB. First, first-surface first conductive layer 311 of capacitor 15 according to this modification will be described.

[0081] 18 , the first-surface first conductive layer 311 constituting the lower electrode of the capacitor 15 includes a seed layer 362 and a plating layer 363. Although not shown, in this modification, as in the above-described embodiment, the first-surface first conductive layer 311 may further include a barrier layer located between the seed layer 362 and the first surface 13 of the substrate 12.

[0082] In the following description, among the multiple layers constituting the first-surface first conductive layer 311 of the capacitor 15, a layer located closer to the substrate 12, such as the seed layer 362, is also referred to as the base layer 362. Furthermore, among the multiple layers constituting the first-surface first conductive layer 311, a layer located farther from the substrate 12 than the base layer 362 and having the largest thickness, such as the plating layer 363, is also referred to as the main layer 363. The side surface 311f of the first-surface first conductive layer 311 includes the side surface 362f of the base layer 362 and the side surface 363f of the plating layer 363. Note that the "side surface" refers to the surface visible when the first-surface first conductive layer 311 is viewed along the planar direction of the first surface 13 of the substrate 12.

[0083] As shown in FIG. 18, a gap 311s may exist between the side surface 311f of the first-surface first conductive layer 311 and the first surface 13 of the substrate 12. For example, as shown in FIG. 18, the side surface 362f of the base layer 362 is located more inward than the side surface 363f of the main body layer 363. As a result, a gap 311s where the first-surface first conductive layer 311 is not present is formed between the side surface 363f of the main body layer 363 and the first surface 13 of the substrate 12. Here, "inside" means the side closer to the center of the capacitor 15 in the in-plane direction of the first surface 13 of the substrate 12 in the cross-sectional view of the capacitor 15. Such a side surface 362f of the base layer 362 is formed by side-etching the side surface 362f of the base layer 362, as will be described later.

[0084] The portion of the side surface 363f of the main layer 363 facing the gap 311s may include an inclined portion having a shape that displaces inward toward the substrate 12. The inclined portion is, for example, a lower curved portion 363h located on the substrate 12 side and facing the gap 311s. The lower curved portion 363h has an outwardly convex shape. Note that "outwardly convex" means that a straight line or plane circumscribing the lower curved portion 363h does not intersect with the main layer 363. As described below, such a lower curved portion 363h is generated due to the shape of the base of the resist layer 37 adjacent to the main layer 363 when the main layer 363 is formed by plating. The side surface 363f may also include an upper curved portion 363g located farther from the substrate 12. Note that the "lower side" refers to the side closer to the substrate 12 than the center of the main layer 363 in the normal direction to the first surface 13 of the substrate 12. Moreover, the “upper side” means a side farther from the substrate 12 than the center position of the main body layer 363 in the normal direction of the first surface 13 of the substrate 12 .

[0085] Next, the first-surface first insulating layer 312 of the capacitor 15 will be described. As shown in FIG. 18 , the first-surface first insulating layer 312 includes, in addition to a first portion 312a located on the upper surface 311a of the first-surface first conductive layer 311, a second portion 312b located on the side surface 311f of the first-surface first conductive layer 311. The second portion 312b is connected to the first portion 312a. In other words, the first portion 312a and the second portion 312b of the first-surface first insulating layer 312 extend continuously to cover the upper end of the side surface 311f of the first-surface first conductive layer 311.

[0086] 18, the symbol T1 represents the thickness of the first portion 312a, and the symbol T2 represents the thickness of the second portion 312b. As in the above-described embodiment, the thickness T1 of the first portion 312a is, for example, 50 nm or more and 400 nm or less. The thickness T1 is, for example, the thickness of the first portion 312a at the center position of the capacitor 15 in the in-plane direction of the first surface 13 of the substrate 12. The thickness T1 may be the maximum thickness of the first portion 312a.

[0087] Preferably, the thickness T2 of the second portion 312b is smaller than the thickness T1 of the first portion 312a. Also, preferably, the thickness T2 of the second portion 312b is equal to or greater than ¼ of the thickness T1 of the first portion 312a. The thickness T2 is, for example, the thickness of the second portion 312b at the central position in the thickness direction of the first-surface first conductive layer 311. The thickness T2 may be the maximum thickness of the second portion 312b.

[0088] The second portion 312b of the first-surface first insulating layer 312 does not have to completely cover the side surface 311f of the first-surface first conductive layer 311. For example, an inclined portion such as the lower curved portion 363h of the side surface 311f of the first-surface first conductive layer 311 may be at least partially exposed from the first-surface first insulating layer 312. Such an exposed portion occurs because it is difficult for the first-surface first insulating layer 312 to enter the gaps 311s of the first-surface first conductive layer 311, as will be described later.

[0089] 18, the first-surface first insulating layer 312 may further include a third portion 312c located on the first surface 13 of the substrate 12. The third portion 312c is not connected to the second portion 312b. That is, the third portion 312c is disconnected from the second portion 312b by the above-mentioned exposed portion. Layers or materials other than the first-surface first conductive layer 311, such as the above-mentioned first-surface second insulating layer 322, may be present between the second portion 312b and the third portion 312c.

[0090] A method for manufacturing the capacitor 15 of the high-frequency device 10 according to this modification will be described below with reference to FIGS.

[0091] First, as in the above-described embodiment, the substrate 12 is prepared. An underlayer 362 is formed on the first surface 13, the second surface 14, and the sidewalls 21 of the substrate 12, for example, by electroless plating. A resist layer 37 is then partially formed on the underlayer 362. The resist layer 37 is then exposed and developed to form an opening 37c in the resist layer 37, as shown in FIG. 19 . The resist layer 37 includes a side surface 37f facing the opening 37c. The side surface 37f may include a base portion 37h that contacts the underlayer 362. The base portion 37h protrudes toward the opening 37c and has a shape that decreases in thickness toward the opening 37c. Such a base portion 37h can be formed, for example, when a negative photosensitive resin is used as the resist layer 37.

[0092] Next, a main body layer 363 is formed by electrolytic plating on the base layer 362 that is not covered by the resist layer 37. Then, the resist layer 37 is removed, as shown in Fig. 20. The main body layer 363 has a side surface 363f having a shape corresponding to the side surface 37f of the resist layer 37 and a lower curved portion 363h having a shape corresponding to the base portion 37h of the resist layer 37.

[0093] 21, the portion of the base layer 362 that was covered with the resist layer 37 is removed by, for example, wet etching. At this time, the base layer 362 is side-etched, so that the side surface 362f of the base layer 362 is positioned more inward than the side surface 363f of the main body layer 363. The main body layer 363 is also etched, although at a lower etching rate than the base layer 362. As a result, an upper curved portion 363g can be formed also on the upper side of the side surface 363f of the main body layer 363, as shown in FIG.

[0094] Next, as in the case of the above-described embodiment, a surface treatment step may be performed in which the surface of the first-side first conductive layer 311 is exposed to plasma such as NH3 plasma. Next, as shown in FIG. 22, a first-side first insulating layer 312 is formed on the first-side first conductive layer 311. For example, the first-side first insulating layer 312 is formed by a film formation method such as plasma CVD or sputtering. In this case, as shown in FIG. 22, the first-side first insulating layer 312 may be formed not only on the upper surface 311a of the first-side first conductive layer 311 but also on the side surface 311f. For example, the above-described second portion 312b is formed on the side surface of the main body layer 363.

[0095] As described above, the side surface 362f of the base layer 362 is located more inward than the side surface 363f of the main layer 363. Therefore, a gap 311s exists between the side surface 311f of the first-surface first conductive layer 311 and the first surface 13 of the substrate 12. During the film formation process, the material constituting the first-surface first insulating layer 312 is unlikely to enter the gap 311s. Therefore, the first-surface first insulating layer 312 is unlikely to be formed on the side surface 362f of the base layer 362 or the lower curved portion 363h of the main layer 363. As a result, as shown in FIG. 22 , the side surface 362f of the base layer 362 and the lower curved portion 363h of the main layer 363 are at least partially exposed from the first-surface first insulating layer 312. Furthermore, the third portion 312c of the first surface first insulating layer 312 formed on the first surface 13 of the substrate 12 is separated from the second portion 312b of the first surface first insulating layer 312 formed on the side surface 311f of the first surface first conductive layer 311.

[0096] Thereafter, the first-surface second conductive layer 321 is formed on the first portion 312a of the first-surface first insulating layer 312. In this way, the capacitor 15 shown in FIG.

[0097] (Effects of the high-frequency device according to this modification) In the capacitor 15 of the high-frequency device 10 according to this modification, the first-surface first insulating layer 312 is provided not only on the upper surface 311a but also on the side surface 311f of the first-surface first conductive layer 311. Therefore, even if the position of the first-surface second conductive layer 321 relative to the first-surface first conductive layer 311 is shifted due to manufacturing tolerances or the like, it is possible to prevent the first-surface second conductive layer 321 from coming into contact with the side surface 311f of the first-surface first conductive layer 311. This makes it possible to prevent the first-surface first conductive layer 311 and the first-surface second conductive layer 321 from becoming electrically conductive, which is a problem.

[0098] Furthermore, in capacitor 15 according to this modification, second portion 312b of first-surface first insulating layer 312 located on side surface 311f of first-surface first conductive layer 311 is disconnected from third portion 312c of first-surface first insulating layer 312 located on first surface 13 of substrate 12. The effect obtained thereby will be described with reference to FIG.

[0099] 23 is a cross-sectional view showing a case where a plurality of, for example, two capacitors 15 are adjacent to each other in the in-plane direction of the first surface 13 of the substrate 12. In this case, if the second portion 312b and the third portion 312c of the first surface first insulating layer 312 are connected, one capacitor 15 may electrically influence the other capacitor 15. As a result, for example, the capacitance value of the capacitor 15 may deviate from the design value.

[0100] In contrast, according to this modification, the second portion 312b and the third portion 312c of the first-surface first insulating layer 312 are disconnected, which makes it possible to prevent one capacitor 15 from affecting the other capacitor 15 electrically. This makes it possible to prevent, for example, the capacitance value of the capacitor 15 from deviating from the design value.

[0101] (Other embodiments) One embodiment of the present disclosure is a high-frequency component comprising: a substrate having glass, the substrate including a first surface located on a first side and a second surface located on a second side opposite the first side; and a capacitor located on the first surface of the substrate, the capacitor having a first-surface first conductive layer located on the first surface of the substrate, a first-surface first insulating layer located on the first-surface first conductive layer, and a first-surface second conductive layer located on the first-surface first insulating layer, the first-surface first insulating layer including an inorganic material having a breakdown field of 6 MV / cm or greater.

[0102] In the high-frequency device according to one embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1×10 -12 A or below.

[0103] In the high-frequency device according to one embodiment of the present disclosure, the inorganic material of the first insulating layer on the first surface may include silicon nitride.

[0104] In the high-frequency device according to one embodiment of the present disclosure, the first surface first insulating layer may have a thickness of 50 nm or more and 400 nm or less.

[0105] In the high-frequency device according to the embodiment of the present disclosure, the first-surface first conductive layer may have a thickness of not less than 5 μm and not more than 20 μm.

[0106] The high-frequency component according to one embodiment of the present disclosure may further include a first-side second insulating layer located on the first-side first insulating layer and including an organic material having a dielectric loss tangent of 0.003 or less.

[0107] In a high-frequency component according to one embodiment of the present disclosure, the substrate may have a through hole, and the high-frequency component may further include an inductor electrically connected to the capacitor, the inductor having the first-surface first conductive layer, a through electrode connected to the first-surface first conductive layer and extending along a side wall of the through hole, and a second-surface first conductive layer connected to the through electrode and located on the second surface of the substrate.

[0108] The high-frequency device according to an embodiment of the present disclosure may further include an organic layer located closer to the center of the through hole than the through electrode and containing an organic material having a dielectric loss tangent of 0.003 or less.

[0109] In a high-frequency component according to one embodiment of the present disclosure, the first surface first insulating layer may include a first portion located on an upper surface of the first surface first conductive layer, and a second portion connected to the first portion and located on a side surface of the first surface first conductive layer.

[0110] In the high-frequency component according to one embodiment of the present disclosure, the thickness of the second portion may be smaller than the thickness of the first portion and may be equal to or greater than ¼ of the thickness of the first portion.

[0111] In a high-frequency component according to one embodiment of the present disclosure, a side surface of the first surface first conductive layer may include a lower curved portion located on the substrate side, and the lower curved portion may be at least partially exposed from the first surface first insulating layer.

[0112] One embodiment of the present disclosure is a method for manufacturing a high-frequency component, comprising the steps of: preparing a substrate having glass, the substrate including a first surface located on a first side and a second surface located on a second side opposite the first side; forming a first-surface first conductive layer on the first surface of the substrate; forming a first-surface first insulating layer on the first-surface first conductive layer, the first-surface first insulating layer including an inorganic material having a breakdown field of 6 MV / cm or more; and forming a first-surface second conductive layer on the first-surface first insulating layer, wherein the first-surface first conductive layer, the first-surface first insulating layer, and the first-surface second conductive layer constitute a capacitor.

[0113] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1×10 -12 A or below.

[0114] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the inorganic material of the first insulating layer on the first surface may include silicon nitride.

[0115] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the first-surface first insulating layer may have a thickness of 50 nm or more and 400 nm or less.

[0116] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the first-surface first conductive layer may have a thickness of 5 μm or more and 20 μm or less.

[0117] The method for manufacturing a high-frequency component according to an embodiment of the present disclosure may further include a surface treatment step of exposing the surface of the first-surface first conductive layer to NH3 plasma prior to the step of forming the first-surface first insulating layer.

[0118] A method for manufacturing a high-frequency component according to one embodiment of the present disclosure may further include a step of forming a first-side second insulating layer on the first-side first insulating layer, the first-side second insulating layer including an organic material having a dielectric tangent of 0.003 or less.

[0119] In a method for manufacturing a high-frequency component according to an embodiment of the present disclosure, the substrate may have a through hole, and the method may further include the steps of forming a through electrode connected to the first-surface first conductive layer and extending along a sidewall of the through hole, and forming a second-surface first conductive layer connected to the through electrode and located on the second surface of the substrate. In this case, the first-surface first conductive layer, the through electrode, and the second-surface first conductive layer constitute an inductor.

[0120] The method for manufacturing a high-frequency component according to an embodiment of the present disclosure may further include a step of forming an organic layer located closer to the center of the through hole than the through electrode, the organic layer including an organic material having a dielectric loss tangent of 0.003 or less. [Example]

[0121] Next, the present disclosure will be described in more detail with reference to examples. However, the present disclosure is not limited to the following examples as long as it does not depart from the gist of the disclosure.

[0122] (Evaluation of inorganic materials) The breakdown field strength of insulating layers containing inorganic materials was measured in accordance with JIS C 2110-1:2010. The following four types of insulating layers containing inorganic materials were prepared. A Keithley picoammeter was used as the measuring instrument. A 200 nm thick SiN layer prepared by plasma CVD. A 200 nm thick SiN layer prepared by sputtering A 200 nm thick SiO2 layer prepared by sputtering 100 nm thick AlO prepared by sputtering x Layer (x is 2 to 4)

[0123] Furthermore, the leakage current, i.e., the current that flows when a DC voltage of 20 V is applied to the four types of insulating layers, was measured using a Keithley picoammeter as the measuring device.

[0124] The measurement results of the dielectric breakdown field and leakage current are shown in Table 1. By using a layer formed by plasma CVD as the insulating layer, the dielectric breakdown field of 6 MV / cm or more and the leakage current of 1×10 12 A leakage current of less than A was achieved. [Table 1]

[0125] (Evaluation of organic materials) The dielectric loss tangent and relative permittivity of insulating layers containing organic materials were measured in accordance with JIS C 2138:2007. The following five types of insulating layers containing organic materials were prepared. A Keysight PNA Network Analyzer was used as the measuring instrument. Film type polyimide Product name: LPA1526 Thickness: 19μm Coating type polyimide Product name: HD7010 Thickness: 9μm Coating type polyimide Product name: PN2010 Thickness: 9μm Film type epoxy Product name: PFR Thickness: 20μm Film type epoxy Product name: FZ Thickness: 20μm

[0126] The transmission loss of the above five types of insulating layers at 5 GHz was also measured using a Keysight PNA Network Analyzer.

[0127] The measurement results of the dielectric loss tangent, relative permittivity, and transmission loss are shown in Table 2. By using a layer formed from polyimide as the insulating layer, it was possible to achieve a dielectric loss tangent of 0.003 or less, a permittivity of 3.4 or less, and a transmission loss of 0.07 or less. [Table 2] [Explanation of symbols]

[0128] 10 High-frequency components 12 PCB 13 Page 1 14 Side 2 15 Capacitor 16 Inductors 20 through holes 21 Side wall 22 Through electrode 26 Organic layer 30 1st wiring structure section 31 1st surface 1st wiring layer 311 First surface, first conductive layer 311a top side 311f side 312 First surface first insulating layer 312a Part 1 312b Part 2 312c 3rd part 32 1st side 2nd wiring layer 321 1st surface 2nd conductive layer 322 1st surface 2nd insulating layer 33 1st side 3rd wiring layer 331 1st surface 3rd conductive layer 332 1st surface 3rd insulating layer 361 Adhesion layer 362 Seed layer (base layer) 362f side 363 Plating layer (main body layer) 363f side 363g Upper curved part 363h Lower curved part 40 2nd wiring structure section 41 2nd side 1st wiring layer 411 Second surface, first conductive layer 412 Second surface first insulating layer

Claims

[Claim 1] a first surface first conductive layer; a first surface first insulating layer located on the first surface first conductive layer; a first-side second conductive layer located on the first-side first insulating layer, the first-surface first insulating layer overlapping the first-surface second conductive layer forms a capacitor together with the first-surface first conductive layer and the first-surface second conductive layer; the first-surface first insulating layer includes an inorganic material having a dielectric breakdown field of 6 MV / cm or more, the first-surface first insulating layer includes a first portion located on a top surface of the first-surface first conductive layer, and a second portion connected to the first portion and located on a side surface of the first-surface first conductive layer, A high-frequency component, wherein the thickness of the second portion is smaller than the thickness of the first portion and is equal to or greater than ¼ of the thickness of the first portion.

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