Method for manufacturing semiconductor substrate

Abstract

In one aspect, a method for manufacturing a semiconductor substrate capable of suppressing generation of shredded temporary fixing agent residues is provided.SOLUTION: The present disclosure, in one aspect, relates to a method for producing a semiconductor substrate including the following step 1 and step 2. Step 1: Step of preparing a semiconductor substrate to which a film-like temporary fixing agent is adhered Step 2: Step of peeling the film-like temporary fixing agent from the semiconductor substrate obtained in Step 1 using a cleaning agent containing glycol ether, hydrocarbon, and amine SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present disclosure relates to a method for manufacturing a semiconductor substrate. [Background technology]

[0002] In recent years, the high integration of semiconductor devices has progressed dramatically, and three-dimensional integrated circuit (3DIC) technology has attracted attention. 3DIC technology is a technology for stacking substrates in multiple layers while connecting them using through-silicon vias (TSVs) and other methods. When stacking substrates in multiple layers, it is necessary to thin the backside of the substrate on which the circuit is formed (the side on which the circuit is not formed) by polishing, and then form electrodes on the backside. Before thinning, the substrate is temporarily fixed (temporarily adhered) to a fixing member (support) with a temporary fixing agent (adhesive), and after undergoing processing such as polishing and electrode formation, the substrate is separated from the fixing member. The temporary fixing agent (adhesive) often remains on the substrate after it has been separated from the fixing member, which can cause problems in subsequent processes. For this reason, various peeling and cleaning methods have been developed to reduce the amount of temporary fixing agent (adhesive) remaining on the substrate.

[0003] For example, Patent Document 1 proposes a sheet peeling method in which an adhesive sheet is peeled off from an adherend by relative movement between the adherend having an adhesive sheet attached to its surface and a peeling tape attached to the adhesive sheet. Patent Document 2 proposes a method for producing a processed semiconductor substrate, which includes a first step of producing a laminate including a semiconductor substrate, a support substrate, and an adhesive layer obtained from an adhesive composition; a second step of processing the semiconductor substrate of the obtained laminate; a third step of peeling off the semiconductor substrate after processing; and a fourth step of cleaning and removing adhesive residue remaining on the peeled semiconductor substrate with a specific cleaning agent composition. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-28063 [Patent Document 2] Patent No. 7121355 Summary of the Invention [Problem to be solved by the invention]

[0005] In the manufacturing process of three-dimensional integrated circuits (3DIC), processing such as electrode formation after polishing a substrate that has been temporarily fixed (temporarily adhered) to a fixing member (support) with a temporary fixative (adhesive) may be carried out at high temperatures of 150°C or higher.If the temporary fixative (adhesive) is altered by heating, it becomes difficult to remove the temporary fixative residue (adhesive residue) that remains on the semiconductor substrate after the fixing member is separated. When a film-like temporary fixing agent (adhesive sheet) is used as the temporary fixing agent, the film-like temporary fixing agent (adhesive sheet) is usually peeled off as proposed in Patent Document 1. Here, peeling of a film-like temporary fixing agent means peeling off the film (temporary fixing agent) while holding the edge of the film of the temporary fixing agent. However, peeling a film-like temporary fixing agent (adhesive sheet) can leave small pieces of temporary fixing agent residue (adhesive residue) on the substrate. This is particularly likely to occur when bumps are present on the substrate. Such small pieces of temporary fixing agent residue (adhesive residue) are even more difficult to remove.

[0006] Therefore, the present disclosure provides a method for manufacturing a semiconductor substrate that can suppress the generation of fragmented temporary fixing agent residue. [Means for solving the problem]

[0007] In one aspect, the present disclosure relates to a method for manufacturing a semiconductor substrate, including the following steps 1 and 2: Step 1: Preparing a semiconductor substrate with a film-like temporary fixing agent adhered to it Step 2: A step of peeling off the film-like temporary fixing agent from the semiconductor substrate obtained in Step 1 using a cleaning agent containing glycol ether, hydrocarbon, and amine.

[0008] In one aspect, the present disclosure relates to a method for removing a film-like temporary fixing agent without performing a peeling treatment, the method including a step of washing a semiconductor substrate to which a film-like temporary fixing agent is adhered with a cleaning agent, and peeling off the film-like temporary fixing agent. [Effects of the Invention]

[0009] According to the present disclosure, it is possible to provide a method for manufacturing a semiconductor substrate that can suppress the generation of fragmented temporary fixing agent residue. DETAILED DESCRIPTION OF THE INVENTION

[0010] The present disclosure is based on the finding that by treating a semiconductor substrate to which a film-like temporary fixing agent is adhered with a specific cleaning agent without peeling the film-like temporary fixing agent, the film-like temporary fixing agent can be peeled off (removed) and the generation of fragmented temporary fixing agent residue can be suppressed.

[0011] In one aspect, the present disclosure relates to a method for manufacturing a semiconductor substrate (hereinafter also referred to as the "semiconductor substrate manufacturing method of the present disclosure") including the following steps 1 and 2. Step 1: Preparing a semiconductor substrate with a film-like temporary fixing agent adhered to it Step 2: A step of peeling off the film-like temporary fixing agent from the semiconductor substrate obtained in Step 1 using a cleaning agent containing glycol ether, hydrocarbon, and amine.

[0012] According to the present disclosure, it is possible to provide a method for manufacturing a semiconductor substrate that can suppress the generation of fragmented temporary fixing agent residue, and to obtain high-quality semiconductor substrates with a high yield.

[0013] Although the details of the mechanism of action by which the effects of the present disclosure are manifested are still unclear, it is presumed as follows. The temporary fixative hardens when subjected to a heat treatment, and a portion of the temporary fixative adheres more strongly to the bump surface. Therefore, when a film-like temporary fixative is subjected to a peeling treatment, the temporary fixative strongly adsorbed to the bump surface is torn off, leaving behind small pieces of temporary fixative residue on the bump. Generally, cleaning agents can swell the temporary fixative and generate stress. However, in the case of such small pieces of temporary fixative residue, the stress generated by the swelling escapes to the surrounding area, making it impossible to peel. Therefore, in the present disclosure, the film-like temporary fixative can be entirely swelled by a cleaning agent containing glycol ether, hydrocarbon, and amine, without the need for a peeling treatment of the film-like temporary fixative. This makes it possible to remove (peel) the film-like temporary fixative without leaving small pieces of temporary fixative residue. However, the present disclosure need not be construed as being limited to this mechanism.

[0014] Examples of semiconductor substrates include silicon substrates (wafers), silicon carbide substrates (wafers), germanium substrates (wafers), gallium nitride substrates (wafers), gallium arsenide substrates (wafers), gallium phosphide substrates (wafers), and gallium arsenide-aluminum substrates (wafers). In one or more embodiments, the semiconductor substrate may be a substrate (wafer) having pads and / or lands that are sites for bonding and mounting. In one or more embodiments, the semiconductor substrate may be a substrate (wafer) having bumps.

[0015] Examples of temporary fixing agents (adhesives) include those that can bond (temporarily fix, adhere) a semiconductor substrate to a fixing member, have durability that can withstand polishing and processing, and allow the semiconductor substrate to be easily separated from the fixing member. Examples of temporary fixing agents (adhesives) include polyimide-based, polysiloxane-based, acrylic-based, and methacrylic-based temporary fixing agents (adhesives). Examples of the film-like temporary fixing agent include an adhesive sheet (sheet, film, tape, etc.). In one or more embodiments, the film-like temporary fixing agent is one that is conventionally removed by a peeling treatment, and in one or more embodiments, is one that is suitable for a peeling treatment. The thickness of the temporary fixing agent (adhesive) is, for example, 5 μm or more and 500 μm or less, and preferably 10 μm or more and 100 μm or less.

[0016] In one or more embodiments, the semiconductor substrate manufacturing method of the present disclosure does not include a step of peeling the film-like temporary fixing agent (peeling step) between step 1 and step 2. In one or more embodiments, the peeling step is a step of peeling the temporary fixing agent by peeling the semiconductor substrate to which the film-like temporary fixing agent is adhered. In one or more embodiments, peeling the film-like temporary fixing agent in the present disclosure refers to peeling the film (temporary fixing agent) while holding the edge of the film of the temporary fixing agent.

[0017] [Step 1: Preparation] Step 1 in the semiconductor substrate manufacturing method of the present disclosure is a step of preparing a semiconductor substrate to which a film-like temporary fixing agent is adhered. In one or more embodiments, step 1 includes the following bonding step (a), polishing step (b), processing step (c), and separation step (d). (a) A bonding process in which the substrate is bonded to the fixing member using a film-like temporary fixing agent (adhesive sheet). (b) A polishing process for polishing the backside of the substrate that is bonded to the fixing member. (c) A processing step for processing the polished surface of the substrate. (d) A separation step of separating the fixing member from the laminate of the fixing member, the film-like temporary fixing agent (adhesive sheet), and the substrate. Each of the above steps will be explained below.

[0018] <Process (a): Adhesion process> Step (a) is a step (adhesion step) of adhering a substrate to a fixing member with a film-like temporary fixing agent (adhesive sheet). In one or more embodiments, step (a) includes bonding the substrate and the fixing member together via the film-like temporary fixing agent (adhesive sheet), and then heat-treating the laminate of the substrate, the film-like temporary fixing agent (adhesive sheet), and the fixing member to bond them together. The substrate used in step (a) may be, for example, a silicon substrate (wafer) or a glass substrate (wafer) having a diameter of 100 to 500 mm and a thickness of 500 to 2000 μm. The fixing member used in step (a) is not particularly limited, but examples thereof include substrates such as silicon substrates (wafers) and glass plates having a diameter of 100 to 500 mm and a thickness of 500 to 20,000 μm. The film-like temporary fixing agent (adhesive sheet) used in step (a) is not particularly limited as long as it can bond the substrate to the fixing member, has durability sufficient to withstand the polishing step and the processing step, and allows the substrate to be easily separated from the fixing member in the separation step. Examples of the film-like temporary fixing agent (adhesive sheet) used in the 3DIC manufacturing process include, but are not limited to, film-like temporary fixing agents (adhesive sheets) used in the 3DIC manufacturing process. Examples of adhesive components of the film-like temporary fixing agent (adhesive sheet) used in the 3DIC manufacturing process include polyimide-based, polysiloxane-based, acrylic-based, or methacrylic-based adhesives. Specific examples include the adhesives described in JP 2021-161196 A. In one or more embodiments, the film-like temporary fixing agent (adhesive sheet) used in step (a) may contain polysiloxane, an acrylic acid ester, or a methacrylic acid ester as an adhesive component, and may further contain a platinum group metal catalyst, a release agent component, etc. The film thickness of the film-like temporary fixing agent (adhesive sheet) is, for example, 5 to 500 μm. The temperature for the heat treatment after bonding the substrate and the fixing member via the film-like temporary fixing agent (adhesive sheet) is, for example, 80°C or higher, and from the viewpoint of preventing the temporary fixing agent (adhesive) from being excessively hardened, it is preferably 150°C or lower. The heat treatment time may be, for example, 30 seconds or more, and is preferably 10 minutes or less from the viewpoint of suppressing deterioration of the film-like temporary fixing agent (adhesive sheet) and other members. Heating can be carried out using a hot plate, an oven, or the like. The film thickness of the film-like temporary fixing agent (adhesive sheet) after the heat treatment is, for example, 5 μm or more and 500 μm or less.

[0019] <Process (b): Polishing process> Step (b) is a step (polishing step) of polishing the back surface (surface opposite to the adhesive surface) of the substrate that is bonded to the fixing member. Examples of the polishing method include mechanical polishing using abrasive grains and chemical mechanical polishing. In step (b), the thickness of the substrate (thinned substrate) after polishing is preferably 200 μm or less, for example, 50 μm to 200 μm.

[0020] <Process (c): Processing process> Step (c) is a step (processing step) of processing the polished surface of the substrate (the back surface of the thinned substrate). In one or more embodiments, step (c) may be an electrode formation step, a metal wiring formation step, a protective film formation step, etc. Examples of such steps include conventionally known processing steps such as metal sputtering for forming electrodes, wet etching, resist application, pattern formation, resist stripping, dry etching, metal plating, silicon etching for forming through-silicon vias (TSVs), and oxide film formation on silicon surfaces. In one or more embodiments, the processing in step (c) is carried out at a high temperature of 150° C. or higher. When forming electrodes such as TSVs, a heat treatment may be carried out at, for example, 250° C. or higher and 350° C. or lower. The film thickness of the film-like temporary fixing agent (adhesive sheet) after the heat treatment at high temperature may be, for example, 5 μm or higher and 500 μm or lower.

[0021] <Step (d): Separation step> Step (d) is a separation step in which the fixing member is separated from the laminate of the fixing member, the film-like temporary fixing agent (adhesive sheet), and the substrate. Examples of the separation method include solvent peeling, laser peeling, and mechanical peeling. In one or more embodiments, the substrate from which the fixing member has been separated is a substrate to which a film-like temporary fixing agent (adhesive) has been adhered.

[0022] [Step 2: Cleaning] Step 2 in the semiconductor substrate manufacturing method of the present disclosure is a step (hereinafter also referred to as a "cleaning step") in which a semiconductor substrate (hereinafter also referred to as an "object to be cleaned") to which a film-like temporary fixing agent is adhered is cleaned with a cleaning agent containing glycol ether, hydrocarbon, and amine, thereby peeling the film-like temporary fixing agent from the semiconductor substrate (object to be cleaned). This cleaning step does not include a peeling process. Examples of peeling processes include mechanical peeling. In the present disclosure, "peeling" refers to removing the temporary fixing agent from the object to be cleaned while at least a portion of the temporary fixing agent is swollen and retaining its film-like shape. In one or more embodiments, "removing" includes washing away. Therefore, in one or more embodiments, step 2 includes swelling the film-like temporary fixing agent with the cleaning agent and washing the temporary fixing agent off the semiconductor substrate. In one or more embodiments, the peeling in step 2 may include dissolving a portion of the film-like temporary fixing agent with a cleaner, but does not include dissolving the entire film-like temporary fixing agent. In one or more embodiments, step 2 is a step of peeling off the film-like temporary fixing agent before 50% or more, 30% or more, 20% or more, or 10% or more of the film-like temporary fixing agent is dissolved by the cleaner.

[0023] Examples of the cleaning method in step 2 include immersion cleaning and spray cleaning. The temperature of the cleaning agent is preferably, for example, 40°C or higher and 120°C or lower. The immersion time for immersion cleaning is preferably, for example, 1 minute to 60 minutes. Ultrasonic vibration may be applied during immersion in the cleaning agent, and ultrasonic conditions may be, for example, 25 to 50 kHz or 35 to 45 kHz. The spray time for spray cleaning is preferably, for example, 1 minute or more and 60 minutes or less.

[0024] (cleaning agent) In one or more embodiments, the cleaning agent used in step 2 contains a glycol ether, a hydrocarbon, and an amine.

[0025] <Glycol ether> The glycol ether may contain, for example, a compound represented by the following formula (I): The glycol ether may be one type or a combination of two or more types. The content of the compound represented by the following formula (I) in the glycol ether is preferably 80% by mass or more, more preferably 90% by mass or more, and even more preferably 100% by mass. RO-(AO) n -H (I) In the above formula (I), R represents a hydrocarbon group having 1 to 6 carbon atoms, AO represents an ethyleneoxy group (EO) or a propyleneoxy group (PO), and n is the number of moles of AO added, which is a number of 1 to 3. In the above formula (I), from the viewpoint of improving the removability of the adhesive, R is preferably a phenyl group or an alkyl group having 1 to 6 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably an alkyl group having 1 to 4 carbon atoms. From the same viewpoint, AO is preferably an ethyleneoxy group (EO). From the same viewpoint, n is preferably 1 to 3. Examples of the compound represented by formula (I) include monophenyl ethers such as ethylene glycol monophenyl ether, diethylene glycol monophenyl ether, and triethylene glycol monophenyl ether; and monoalkyl ethers having an alkyl group of 1 to 6 carbon atoms, such as ethylene glycol monoalkyl ether, diethylene glycol monoalkyl ether, triethylene glycol monoalkyl ether, and tripropylene glycol monoalkyl ether. Among these, from the viewpoint of improving the removability of the adhesive, the compound represented by formula (I) is more preferably at least one selected from ethylene glycol monoalkyl ether, diethylene glycol monoalkyl ether, triethylene glycol monoalkyl ether, and tripropylene glycol monoalkyl ether, each having an alkyl group of 1 to 6 carbon atoms, and even more preferably at least one selected from ethylene glycol monobutyl ether, diethylene glycol monobutyl ether (BDG), and propylene glycol monomethyl ether (PGME). In one or more embodiments, the glycol ether has a solubility in water at 20°C of more than 10% by mass. As the glycol ether, from the viewpoint of improving the removability of the adhesive, a diethylene glycol monoalkyl ether having an alkyl group having 1 to 6 carbon atoms is preferred, and diethylene glycol monobutyl ether (BDG) is more preferred. When the cleaning agent contains glycol ether, the content of glycol ether in the cleaning agent is preferably 10% by mass or more, more preferably 15% by mass or more, from the viewpoints of improving adhesive removability and compatibility, and is preferably 65% ​​by mass or less, more preferably 60% by mass or less, from the viewpoint of improving adhesive removability. More specifically, the content of glycol ether in the cleaning agent is, for example, 10% by mass or more and 65% by mass or less, or 15% by mass or more and 60% by mass or less. When two or more glycol ethers are used in combination, the content of glycol ether refers to the total content of the glycol ethers.

[0026] <Hydrocarbons> In one or more embodiments, the hydrocarbon is a hydrocarbon-based organic solvent. From the viewpoint of improving adhesive removability, hydrocarbons having a cyclic structure are preferred, and organic solvents such as alicyclic hydrocarbons and aromatic hydrocarbons are more preferred. Examples of alicyclic hydrocarbons include cycloalkanes such as cyclohexane. Examples of aromatic hydrocarbons include toluene, ethylbenzene, xylene, and mesitylene (1,3,5-trimethylbenzene). The hydrocarbon may be one type or a combination of two or more types. The total content of alicyclic hydrocarbons and aromatic hydrocarbons in the hydrocarbon is preferably 80% by mass or more, more preferably 90% by mass or more, and even more preferably 100% by mass. From the viewpoint of improving the removability of the adhesive, the number of carbon atoms in the hydrocarbon is preferably 5 or more, more preferably 6 or more, and from the same viewpoint, it is preferably 14 or less, more preferably 12 or less, even more preferably 10 or less, and even more preferably 9 or less. When the hydrocarbon is an alicyclic hydrocarbon, the number of carbon atoms in the alicyclic hydrocarbon is preferably 5 or more, and preferably 14 or less, more preferably 10 or less, and even more preferably 8 or less, from the same viewpoint. When the hydrocarbon is an aromatic hydrocarbon, the number of carbon atoms in the aromatic hydrocarbon is, from the same viewpoint, preferably 5 or more, more preferably 6 or more, even more preferably 7 or more, and preferably 14 or less, more preferably 12 or less, even more preferably 10 or less, and even more preferably 9 or less. Examples of hydrocarbons include at least one selected from ethylbenzene, xylene, mesitylene, and cyclohexane, and from the viewpoints of improving adhesive removability, storage stability, availability, and chemical substance regulations, ethylbenzene or xylene is preferred. Examples of hydrocarbons include at least one selected from alicyclic hydrocarbons and aromatic hydrocarbons. From the viewpoint of improving the removability of the adhesive, aromatic hydrocarbons are preferred, aromatic hydrocarbons having 5 to 14 carbon atoms are more preferred, aromatic hydrocarbons having 6 to 12 carbon atoms are even more preferred, aromatic hydrocarbons having 7 to 10 carbon atoms are even more preferred, aromatic hydrocarbons having 7 to 9 carbon atoms are even more preferred, at least one selected from ethylenebenzene, xylene, and methylenebenzene is even more preferred, and ethylbenzene is even more preferred. The hydrocarbon content in the cleaning agent is preferably 10% by mass or more, more preferably 15% by mass or more, and 25% by mass or more from the viewpoint of improving adhesive removability, and is preferably 90% by mass or less, more preferably 80% by mass or less, and even more preferably 75% by mass or less from the viewpoint of compatibility. More specifically, the hydrocarbon content in the cleaning agent is preferably, for example, 10% by mass or more and 80% by mass or less, or 10% by mass or more and 90% by mass or less, or 15% by mass or more and 90% by mass or less, or 25% by mass or more and 80% by mass or less, or 25% by mass or more and 75% by mass or less. When two or more hydrocarbons are used in combination, the hydrocarbon content refers to the total content of those hydrocarbons.

[0027] <amine> Examples of the amine include alkanolamines (amino alcohols). Examples of the alkanolamines (amino alcohols) include those containing a compound represented by the following formula (II). The amine may be one type or a combination of two or more types. In one or more embodiments, the alkanolamine is a compound that does not have a branched carbon chain. The content of the compound represented by the following formula (II) in the alkanolamine is preferably 80% by mass or more, more preferably 90% by mass or more, and even more preferably 100% by mass. [ka] In the above formula (II), R 1 represents a linear alkanol group having 2 to 4 carbon atoms, and R 2represents a linear alkanol group having 2 to 4 carbon atoms, a methyl group, or a hydrogen atom; R 3 represents a methyl group or a hydrogen atom. In the above formula (II), R 1 From the viewpoint of improving the removability of the adhesive, R is preferably a linear alkanol group having 2 or 3 carbon atoms. 2 From the same viewpoint, R is preferably a hydrogen atom. 3 From the same viewpoint, is preferably a hydrogen atom. Examples of amines include at least one selected from monoethanolamine, N-methylmonoethanolamine, N-ethylmonoethanolamine, diethanolamine, N-dimethylmonoethanolamine, N-methyldiethanolamine, N-diethylmonoethanolamine, N-ethyldiethanolamine, N-(β-aminoethyl)ethanolamine, and N-(β-aminoethyl)diethanolamine. Among these, from the viewpoint of improving adhesive removability, alkylmonoalkanolamines or monoalkanolamines are preferred, and monoethanolamine is more preferred. The amine content in the cleaning agent is preferably 3% by mass or more, more preferably 5% by mass or more, and even more preferably 8% by mass or more from the viewpoint of improving adhesive removability, reducing component damage, and reducing nitrogen content, and is preferably 50% by mass or less, more preferably 45% by mass or less, and even more preferably 40% by mass or less. More specifically, the amine content in the cleaning agent is preferably, for example, 3% by mass or more and 50% by mass or less, or 5% by mass or more and 45% by mass or less, or 8% by mass or more and 40% by mass or less. When two or more amines are used in combination, the amine content refers to the total content of those amines.

[0028] <Mass ratio (amine / glycol ether)> The mass ratio of amine to glycol ether (amine / glycol ether) in the cleaner is preferably 0.01 or more, more preferably 0.05 or more, and even more preferably 0.1 or more, from the viewpoint of improving adhesive removability, and from the same viewpoint, is preferably 10 or less, more preferably 5 or less, and even more preferably 2 or less. <Mass ratio (amine / hydrocarbon)> The mass ratio of amine to hydrocarbon (amine / hydrocarbon) in the precleaning agent is preferably 0.01 or more, more preferably 0.05 or more, and even more preferably 0.1 or more, from the viewpoint of improving adhesive removability, and from the same viewpoint, is preferably 10 or less, more preferably 5 or less, and even more preferably 1 or less. <Mass ratio (glycol ether / hydrocarbon)> The mass ratio of glycol ether to hydrocarbon (glycol ether / hydrocarbon) in the pre-cleaning agent is preferably 0.01 or more, more preferably 0.1 or more, and even more preferably 0.2 or more, from the viewpoint of improving adhesive removability, and from the same viewpoint, is preferably 10 or less, more preferably 5 or less, and even more preferably 1 or less.

[0029] <Other ingredients> In one or more embodiments, the cleaning agent may further contain water and other components as needed. Examples of the other components include components that can be used in ordinary cleaning agents, such as solvents other than organic solvents, alkali agents other than amines, surfactants, chelating agents, thickeners, dispersants, rust inhibitors, polymeric compounds, solubilizers, antioxidants, preservatives, antifoaming agents, and antibacterial agents.

[0030] In the present disclosure, the "content of each component in the detergent" refers to the content of each component at the time of cleaning, i.e., at the time when the detergent begins to be used for cleaning. In one or more embodiments, the cleaning agent can be produced by blending an organic solvent and / or an amine, and, if necessary, the above-mentioned optional components (water and other components) using a known method.

[0031] The substrate after cleaning in step 2 may be rinsed with water or alcohol (rinse liquid) and then dried. The alcohol may be, for example, at least one selected from methanol, ethanol, isopropyl alcohol, and propylene glycol monomethyl ether. The temperature of the rinse liquid is, for example, 10°C to 60°C. The rinsing time may be, for example, 10 to 300 seconds, where the rinsing time refers to the time during which the rinsing liquid is supplied. The method of the rinsing treatment is not particularly limited, and a method generally used for cleaning a substrate in the manufacturing process of a semiconductor substrate can be adopted. Examples of such a method include a method of immersing the substrate in a rinsing liquid, a method of pouring a rinsing liquid onto the substrate, and a method of supplying a rinsing liquid to the substrate while spinning the substrate. The drying method is not particularly limited, and examples thereof include static drying, which can be carried out at room temperature (e.g., 25°C).

[0032] [Items to be cleaned] The object to be cleaned may be, for example, a semiconductor substrate to which a film-like temporary fixing agent (adhesive sheet) is adhered. Examples of the semiconductor substrate include a silicon substrate (wafer), a silicon carbide substrate (wafer), a germanium substrate (wafer), a gallium nitride substrate (wafer), a gallium arsenide substrate (wafer), a gallium phosphide substrate (wafer), and a gallium arsenide aluminum substrate (wafer). In one or more embodiments, the substrate (wafer) may be a substrate (wafer) having pads and / or lands that serve as bonding and mounting sites. Examples of materials for the pads and lands include metals such as gold and copper. In one or more embodiments, the semiconductor substrate may be a substrate (wafer) having bumps. Examples of the bumps include ball bumps and plated bumps. Examples of the bump size include a bump height of 1 to 200 μm, a bump diameter of 1 to 200 μm, and a bump pitch of 1 to 500 μm. In one or more embodiments, examples of the semiconductor substrate to which a film-like temporary fixing agent (adhesive sheet) is adhered include a semiconductor substrate to which a film-like temporary fixing agent (adhesive sheet) is adhered, a semiconductor substrate to which a film-like temporary fixing agent (adhesive sheet) has not been subjected to a peeling treatment, a semiconductor substrate after a substrate that has been temporarily fixed (adhered) to a fixing member with a film-like temporary fixing agent (adhesive sheet) has been separated from the fixing member, and a substrate after the fixing member has been separated from a laminate of a fixing member and a substrate that are adhered via a film-like temporary fixing agent (adhesive sheet). In one or more embodiments, the semiconductor substrate to which a film-like temporary fixing agent (adhesive sheet) is adhered may be a semiconductor substrate to which a film-like temporary fixing agent (adhesive sheet) used in the manufacturing process of a three-dimensional integrated circuit (3DIC) is adhered. In one or more embodiments, the semiconductor substrate to which the film-like temporary fixing agent (adhesive sheet) is adhered has undergone a heat treatment at a temperature of 230° C. or higher. In one or more embodiments, the heat treatment may be the heat treatment in the processing step described above.

[0033] [How to remove the film-type temporary fixative] In one aspect, the present disclosure relates to a method for removing a film-like temporary fixing agent without performing a peeling treatment, which includes a step (cleaning step) of cleaning a semiconductor substrate (object to be cleaned) to which a film-like temporary fixing agent (adhesive sheet) is adhered, with a cleaning agent, thereby peeling off the film-like temporary fixing agent (hereinafter also referred to as the "removal method of the present disclosure"). Examples of the object to be cleaned in the removal method of the present disclosure include the above-mentioned objects to be cleaned. The cleaning agent in the removal method of the present disclosure may be the cleaning agent used in step 2 of the semiconductor substrate manufacturing method of the present disclosure described above. The cleaning method in the cleaning step in the removal method of the present disclosure may be the same as the cleaning method in step 2 in the semiconductor substrate manufacturing method of the present disclosure described above. According to one or more embodiments, the removal method of the present disclosure can suppress the generation of fragmented temporary fixing agent residue. [Example]

[0034] The present disclosure will be specifically described below using examples, but the present disclosure is not limited to these examples in any way.

[0035] 1. Preparation of Cleaning Agent The components shown in Table 1 were blended in the amounts (% by mass, active ingredient) shown in Table 1, and the blended mixture was stirred and mixed to prepare a cleaning agent.

[0036] The following was used to prepare the detergent: MEA: Monoethanolamine [manufactured by Nippon Shokubai Co., Ltd.] BDG: Butyl diglycol [Nihon Nyukazai Co., Ltd., diethylene glycol monobutyl ether] Ethylbenzene [Fujifilm Wako Pure Chemical Industries, Ltd.]

[0037] [Table 1]

[0038] 2. Evaluation of Cleaning Efficiency (Removability of Film-like Temporary Fixative) (Example 1, Comparative Example 1) The following cleaning test was carried out using the test pieces shown below, and the appearance was evaluated. [Test piece] The test piece was a 40mm x 40mm silicon wafer (700µm thick) with bumps (height: 50µm, diameter: 60µm, pitch: 100µm). The gaps between the bumps were coated with a 5µm thick polybenzoxazole coating, and a film-like temporary fixative (thickness: 50µm, adhesive component: acrylic) was applied to the entire top surface, followed by heat treatment at high temperature (290°C) for 30 minutes. The thickness of the film-like fixative after heat treatment at high temperature was 50µm. In Example 1, the test piece was used in the cleaning test without subjecting the film-like temporary fixing agent to a peeling treatment. In Comparative Example 1, the test piece after the film-like temporary fixing agent was subjected to a peeling treatment was used in the cleaning test. The peeling treatment was carried out by pinching the edge of the film-like temporary fixing agent with tweezers and peeling it off (mechanical peeling). [Cleaning test] 3 kg of each cleaning composition was added to a 5-L stainless steel beaker. The beaker was heated to 60°C, and the test pieces were sprayed for 30 minutes while circulating the composition using a box-type spray washer equipped with a one-fluid nozzle (full cone type) J020 (manufactured by Ikeuchi Co., Ltd.) (pressure: 0.1 MPa, spray distance: 8 cm). After rinsing with ethanol (25°C) for 20 seconds, the test pieces were left to dry at room temperature (25°C). The test pieces after the above treatment were visually observed at a magnification of 1500 times using a scanning electron microscope (SEM, manufactured by JEOL Ltd.) to evaluate the cleaning properties. The results are shown in Table 2. <Surface cleanliness criteria> A: 1 μm on the bump surface 2 No residue less than B: 1 μm on the bump surface 2 More than 3μm 2 Residue less than 100% is observed C: 3 μm on the bump surface 2 More than 5μm 2 Residue less than 100% is observed D: 5 μm on the bump surface 2 The above residues are observed In the cleaning test of Example 1, it was visually observed that the temporary fixing agent on the test piece was peeled off and washed away. In the cleaning test of Comparative Example 1, the temporary fixing agent on the test piece was roughly peeled off by the peeling treatment, so in the cleaning test of Comparative Example 1, it was not possible to visually confirm that the temporary fixing agent was washed away, but a large amount of temporary fixing agent residue remained on the bump surfaces after cleaning.

[0039] [Table 2]

[0040] As shown in Table 2, in Example 1, in which the film-like temporary fixing agent was treated with a cleaning agent without being subjected to a peeling treatment, no shredded residue of the temporary fixing agent was found on the wafer surface after cleaning, whereas in Comparative Example 1, in which the film-like temporary fixing agent was treated with a cleaning agent after being subjected to a peeling treatment, shredded residue of the temporary fixing agent was found on the wafer surface after cleaning. Therefore, it was found that treating the film-like temporary fixing agent with a cleaning agent without peeling it can prevent the generation of shredded residue of the temporary fixing agent on the substrate surface after cleaning. [Industrial Applicability]

[0041] According to the present disclosure, it is possible to provide a method for manufacturing a semiconductor substrate that can suppress the generation of fragmented temporary fixing agent residue, thereby improving the productivity of semiconductor substrates.

Claims

1. A method for manufacturing a semiconductor substrate, comprising the following steps 1 and 2: Step 1: A step of preparing a semiconductor substrate to which a film-like temporary fixing agent is adhered. Step 2: A step of peeling off the film-like temporary fixing agent from the semiconductor substrate obtained in Step 1 using a cleaning agent containing glycol ether, hydrocarbon, and amine.

2. The manufacturing method according to claim 1, wherein the thickness of the temporary fixing agent is 5 μm or more and 500 μm or less.

3. The manufacturing method according to claim 1 , wherein the thickness of the temporary fixing agent is 10 μm or more and 100 μm or less.

4. 2. The method according to claim 1, wherein the mass ratio of the amine to the glycol ether (amine / glycol ether) in the cleaning agent used in step 2 is 0.01 or more and 10 or less.

5. 2. The method according to claim 1, wherein the mass ratio of the amine to the hydrocarbon (amine / hydrocarbon) in the cleaning agent used in step 2 is 0.01 or more and 10 or less.

6. The method according to claim 1, wherein the content of glycol ether in the cleaning agent used in step 2 is 10% by mass or more and 65% by mass or less.

7. The method according to claim 1 , wherein the content of hydrocarbons in the cleaning agent used in step 2 is 10% by mass or more and 90% by mass or less.

8. The method according to claim 1 , wherein the content of the amine in the cleaning agent used in step 2 is 3% by mass or more and 50% by mass or less.

9. 2. The manufacturing method according to claim 1, wherein the temporary fixing agent is at least one selected from the group consisting of polyimide-based, polysiloxane-based, acrylic-based, and methacrylic-based agents.

10. The manufacturing method according to claim 1, wherein step 1 includes the following steps: bonding step (a), polishing step (b), processing step (c), and separating step (d). (a) A bonding step of bonding a substrate to a fixing member with a film-like temporary fixing agent. (b) a polishing step of polishing the backside of the substrate from the adhesive surface to the fixing member; (c) A processing step of processing the polished surface of the substrate (d) A separation step of separating the fixing member from the laminate of the fixing member, the film-like temporary fixing agent, and the substrate.

11. The manufacturing method according to claim 1 , wherein step 2 includes swelling the film-like temporary fixing agent with the cleaning agent and washing the temporary fixing agent away from the semiconductor substrate.

12. A method for removing a film-like temporary fixative without performing a peeling treatment, comprising: A method for removing a film-like temporary fixing agent, comprising the step of washing a semiconductor substrate to which a film-like temporary fixing agent has been adhered with a cleaning agent, and peeling off the film-like temporary fixing agent.

Images