Capacitor

Abstract

To reduce parasitic capacitance.SOLUTION: The capacitor 10 includes a substrate 20 including a first substrate surface 21, an insulating layer 30 provided on the first substrate surface 21, and a first electrode-side PE1 and a second electrode-side PE2 provided in the insulating layer 30 and facing each other. The first pole PE1 includes a first pole plate 40 and a plurality of first pole pieces 60. The second pole PE2 includes a second pole plate 50 and a plurality of second pole pieces 70. The first electrode plate 40 is disposed closer to the first substrate surface 21 and faces the first substrate surface 21. The second electrode plate 50 is located on the opposite side of the first substrate surface 21 with respect to the first electrode plate 40 in the insulating layer 30 and faces the first electrode plate 40. The plurality of first electrode parts 60 and the plurality of second electrode parts 70 are alternately arranged in the X direction and face each other in the X direction. The first electrode plate 40 is interposed between the plurality of second electrode parts 70 and the semiconductor substrate 20.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to capacitors. [Background technology]

[0002] Patent Document 1 discloses an ADC (AD converter) that uses a comparator having a capacitive DAC (Digital-to-Analog Converter). The capacitive DAC includes a capacitor. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-64873

[0004] [overview] A capacitor may include, for example, a substrate and first and second electrodes that constitute the capacitor. In this case, parasitic capacitance may occur between the substrate and the second electrode that is farther from the substrate than the first electrode. This parasitic capacitance may affect the operation of a circuit to which the capacitor is applied.

[0005] A capacitor according to one embodiment of the present disclosure comprises a substrate including a first substrate surface, an insulating layer provided on the first substrate surface, and a first electrode and a second electrode provided within the insulating layer and facing each other, the first electrode including a first electrode plate and a plurality of first electrode parts, the second electrode including a second electrode plate and a plurality of second electrode parts, the first electrode plate being provided within the insulating layer closer to the first substrate surface and facing the first substrate surface, the second electrode plate being located within the insulating layer on the opposite side of the first substrate surface with respect to the first electrode plate, and the first electrode plate the plurality of first electrode parts are arranged between the first electrode plate and the second electrode plate and are electrically connected to the first electrode plate, the plurality of second electrode parts are arranged between the second electrode plate and the first electrode plate and are electrically connected to the second electrode plate, the plurality of first electrode parts and the plurality of second electrode parts are arranged alternately in a first direction perpendicular to the thickness direction of the substrate and face each other in the first direction, and the first electrode plate is interposed between the plurality of second electrode parts and the substrate. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic perspective view of an exemplary capacitor according to the first embodiment. [Figure 2] FIG. 2 is a schematic plan view of the capacitor of FIG. [Figure 3] FIG. 3 is a schematic cross-sectional view of the capacitor taken along line F3-F3 in FIG. [Figure 4] FIG. 4 is a schematic cross-sectional view of the capacitor taken along line F4-F4 in FIG. [Figure 5] FIG. 5 is a schematic cross-sectional view of the capacitor taken along line F5-F5 in FIG. [Figure 6] FIG. 6 is a schematic perspective view of an exemplary capacitor according to the second embodiment. [Figure 7] FIG. 7 is a schematic plan view of the capacitor of FIG. [Figure 8]FIG. 8 is a schematic cross-sectional view of the capacitor taken along line F8-F8 in FIG. [Figure 9] FIG. 9 is a schematic cross-sectional view of the capacitor taken along line F9-F9 in FIG. [Figure 10] FIG. 10 is a schematic circuit diagram of an ADC using a comparator with a capacitive DAC. [Figure 11] FIG. 11 is a schematic cross-sectional view of a modified capacitor. [Figure 12] FIG. 12 is a schematic cross-sectional view of a modified capacitor. [Figure 13] FIG. 13 is a schematic cross-sectional view of a modified capacitor. [Figure 14] FIG. 14 is a schematic cross-sectional view of a modified capacitor. [Figure 15] FIG. 15 is a schematic plan view of a modified capacitor. [Figure 16] FIG. 16 is a schematic cross-sectional view of a modified capacitor. [Figure 17] FIG. 17 is a schematic plan view of a modified capacitor.

[0007] [Detailed explanation] Hereinafter, several embodiments of the capacitor of the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of explanation, the components shown in the drawings are not necessarily drawn to scale. Also, for ease of understanding, hatching lines may be omitted in cross-sectional views. The accompanying drawings merely illustrate embodiments of the present disclosure and should not be considered to limit the present disclosure.

[0008] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0009] Terms such as "first," "second," and "third" are used in this disclosure merely to label and are not necessarily intended to dictate any ordering of their objects. The phrase "at least one" used in this disclosure means "one or more" of the desired options. As an example, the phrase "at least one" used in this disclosure means "only one option" or "both of two options" when the number of options is two. As another example, the phrase "at least one" used in this disclosure means "only one option" or "any combination of two or more options" when the number of options is three or more.

[0010] As used in this disclosure, "the dimensions (width, length) of A are equal to the dimensions (width, length) of B" or "the dimensions (width, length) of A and the dimensions (width, length) of B are equal to each other" also includes a relationship in which the difference between the dimensions (width, length) of A and the dimensions (width, length) of B is, for example, within 10% of the dimensions (width, length) of A.

[0011] First Embodiment The configuration of a capacitor 10 according to the first embodiment will be described with reference to FIGS. FIG. 1 is a schematic perspective view of a capacitor 10 according to a first embodiment. FIG. 2 is a schematic plan view of the capacitor 10 of FIG. 1. FIG. 3 is a schematic cross-sectional view of the capacitor 10 taken along line F3-F3 in FIG. 2. FIG. 4 is a schematic cross-sectional view of the capacitor 10 taken along line F4-F4 in FIG. 2.

[0012] As shown in FIG. 1, capacitor 10 has a substantially rectangular parallelepiped shape with its thickness direction aligned in the Z direction. Capacitor 10 includes a semiconductor substrate 20. Semiconductor substrate 20 is flat with its thickness direction aligned in the Z direction. Semiconductor substrate 20 includes a first substrate surface 21 and a second substrate surface 22 opposite to first substrate surface 21. For ease of explanation, two mutually orthogonal directions perpendicular to the Z direction are referred to as the "X direction" and the "Y direction." Viewing capacitor 10 from the Z direction is referred to as a "planar view." The X direction is an example of a "first direction," and the Y direction is an example of a "second direction." Semiconductor substrate 20 is also an example of a "substrate."

[0013] The semiconductor substrate 20 may be made of a material containing silicon (Si). For example, the semiconductor substrate 20 may be a silicon substrate. The semiconductor substrate 20 may contain impurities. The impurities may be p-type impurities. For example, the semiconductor substrate 20 may be a silicon substrate containing p-type impurities. The p-type impurities may be, for example, boron (B) or aluminum (Al). The resistivity of the semiconductor substrate 20 can be set to 5 mΩ·cm or more and 100 mΩ·cm or less by introducing p-type impurities.

[0014] The capacitor 10 includes an insulating layer 30 provided on the first substrate surface 21 of the semiconductor substrate 20. The insulating layer 30 is provided, for example, over the entire first substrate surface 21. The capacitor 10 has a flat plate shape with its thickness direction in the Z direction. The insulating layer 30 includes a first surface 31, a second surface 32 opposite the first surface 31, and first to fourth side surfaces 33 to 36 as four side surfaces connecting the first surface 31 and the second surface 32. The second surface 32 is the surface of the insulating layer 30 closer to the semiconductor substrate 20. In one example, the second surface 32 may be in contact with the first substrate surface 21 of the semiconductor substrate 20. The first side surface 33 and the second side surface 34 form both end surfaces of the insulating layer 30 in the X direction. The third side surface 35 and the fourth side surface 36 form both end surfaces of the insulating layer 30 in the Y direction.

[0015] The insulating layer 30 has electrical insulation properties. The insulating layer 30 may be made of an oxide film. For example, the insulating layer 30 may be made of a material containing at least one of silicon oxide (SiO2), silicon nitride (SiN), silicon oxynitride (SiON), and aluminum oxide (Al2O3). For example, the insulating layer 30 is made of silicon oxide. For example, as shown in FIG. 3, the insulating layer 30 may have a structure in which a plurality of insulating films (insulating films 301 to 309 in the first embodiment) are stacked in the Z direction. The insulating film 301 forms the second surface 32 of the insulating layer 30. The insulating film 309 forms the first surface 31 of the insulating layer 30. The insulating films 301 to 309 are stacked in order from the second surface 32 toward the first surface 31 of the insulating layer 30. For example, the thicknesses (dimensions in the Z direction) of the insulating films 301 to 309 are equal to each other.

[0016] 1, the capacitor 10 includes a first electrode PE1 and a second electrode PE2 that face each other. An insulating layer 30 is interposed between the first electrode PE1 and the second electrode PE2 that face each other. That is, the first electrode PE1 and the second electrode PE2 face each other with the insulating layer 30 interposed therebetween. The first electrode PE1 includes a first electrode plate 40 and a plurality of first electrode parts 60. The second electrode PE2 includes a second electrode plate 50 and a plurality of second electrode parts 70.

[0017] The first electrode plate 40 and the second electrode plate 50 are provided on the insulating layer 30. The first electrode plate 40 and the second electrode plate 50 are arranged spaced apart from each other in the Z direction. The first electrode plate 40 is provided within the insulating layer 30, closer to the first substrate surface 21 of the semiconductor substrate 20. The first electrode plate 40 faces the first substrate surface 21. The second electrode plate 50 is located within the insulating layer 30 on the opposite side of the first substrate surface 21 from the first electrode plate 40. The second electrode plate 50 faces the first electrode plate 40 in the Z direction. The insulating layer 30 is interposed between the first electrode plate 40 and the second electrode plate 50 in the Z direction.

[0018] As shown in FIG. 3 , the first electrode plate 40 and the second electrode plate 50 are each provided on one insulating film. In one example, the first electrode plate 40 may be provided on the insulating film 302. That is, the first electrode plate 40 may be disposed apart from the semiconductor substrate 20 in the Z direction. In one example, the second electrode plate 50 may be provided on the insulating film 308. That is, the second electrode plate 50 does not need to be exposed from the first surface 31 of the insulating layer 30. In this manner, the first electrode plate 40 and the second electrode plate 50 may each be embedded in the insulating layer 30. Insulating films 303 to 307 are interposed between the first electrode plate 40 and the second electrode plate 50 in the Z direction. The first electrode plate 40 may be electrically connected to the semiconductor substrate 20. In one example, the first electrode plate 40 and the semiconductor substrate 20 may be connected by a connection via (not shown). The connection via is made of a metal material. The connection via may be provided in the insulating film 301. The connection vias penetrate the insulating film 301 in the Z direction, thereby connecting the first electrode plate 40 and the semiconductor substrate 20 together.

[0019] Each of the first electrode plate 40 and the second electrode plate 50 has a flat plate shape with the Z direction as the thickness direction. Each of the first electrode plate 40 and the second electrode plate 50 may have a rectangular shape in a plan view. In one example, the size of the first electrode plate 40 in a plan view may be equal to the size of the second electrode plate 50 in a plan view. In another example, the thickness (dimension in the Z direction) of the first electrode plate 40 may be equal to the thickness (dimension in the Z direction) of the second electrode plate 50.

[0020] The shapes of the first electrode plate 40 and the second electrode plate 50 in a plan view can be changed as desired. The size of the first electrode plate 40 in a plan view may be different from the size of the second electrode plate 50 in a plan view. The thickness of the first electrode plate 40 may be different from the thickness of the second electrode plate 50.

[0021] Each of the first electrode plate 40 and the second electrode plate 50 may be composed of a single metal layer or may have a laminated structure of multiple different metal layers. In one example, the material constituting the first electrode plate 40 may be the same as the material constituting the second electrode plate 50.

[0022] Each of the first electrode plate 40 and the second electrode plate 50 may include at least one of, for example, copper (Cu), aluminum, an aluminum alloy, a copper alloy, tungsten (W), molybdenum (Mo), nickel (Ni), titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN). In one example, each of the first electrode plate 40 and the second electrode plate 50 may be made of a material containing at least one of aluminum and copper. In the first embodiment, each of the first electrode plate 40 and the second electrode plate 50 is made of a material containing aluminum. Note that the material constituting the first electrode plate 40 may be different from the material constituting the second electrode plate 50.

[0023] Each of the first electrode parts 60 and the second electrode parts 70 is disposed between the first electrode plate 40 and the second electrode plate 50. The first electrode parts 60 and the second electrode parts 70 are alternately disposed in the X direction and face each other in the X direction. In the first embodiment, the first electrode parts 60 and the second electrode parts 70 are alternately arranged one by one in the X direction. In one example, when the first electrode parts 60 and the second electrode parts 70 are arranged in the X direction, the electrode part closest to the first side surface 33 of the insulating layer 30 is the first electrode part 60, and the electrode part closest to the second side surface 34 of the insulating layer 30 is also the first electrode part 60. The arrangement of the first electrode parts 60 and the second electrode parts 70 can be changed as desired. That is, the electrode part closest to the first side surface 33 of the insulating layer 30 may be the second electrode part 70, or the electrode part closest to the second side surface 34 of the insulating layer 30 may be the second electrode part 70.

[0024] 2, the multiple first electrode parts 60 may be arranged within a range overlapping with the second electrode plate 50 in a plan view. The multiple second electrode parts 70 may be arranged within a range overlapping with the second electrode plate 50 in a plan view. Although not shown, the second electrode plate 50 and the multiple second electrode parts 70 may be arranged within a range overlapping with the first electrode plate 40 in a plan view. Although not shown, the multiple first electrode parts 60 may be arranged within a range overlapping with the first electrode plate 40 in a plan view.

[0025] 2, the arrangement pitch P1 of the multiple first electrode parts 60 in the X direction is equal to the arrangement pitch P2 of the multiple second electrode parts 70 in the X direction. Therefore, in plan view, the distance DA between a first electrode part 60 and a second electrode part 70 adjacent to the first electrode part 60 on one side in the X direction is equal to the distance DB between the first electrode part 60 and a second electrode part 70 adjacent to the first electrode part 60 on the other side in the X direction.

[0026] The distances DA and DB may be changed depending on the withstand voltage required for the capacitor 10. The distances DA and DB increase as the withstand voltage required for the capacitor 10 increases. For example, when the withstand voltage required for the capacitor 10 is 40 V, the distances DA and DB are 0.28 μm. For example, when the withstand voltage required for the capacitor 10 is 80 V, the distances DA and DB are 0.46 μm. For example, when the withstand voltage required for the capacitor 10 is 130 V, the distances DA and DB are 0.76 μm. For example, when the withstand voltage required for the capacitor 10 is 200 V, the distances DA and DB are 1.06 μm. Here, the distance DA can be defined as the minimum distance between the first electrode part 60 and the second electrode part 70 adjacent to the first electrode part 60 on one side in the X direction in a plan view. The distance DB can be defined as the minimum distance between a first electrode part 60 and a second electrode part 70 adjacent to the first electrode part 60 on the other side in the X direction in plan view.

[0027] As shown in FIGS. 3 and 4, each first electrode part 60 is electrically connected to the first electrode plate 40. Each first electrode part 60 is composed of a plurality of first conductive layers 61 stacked from the first electrode plate 40 toward the second electrode plate 50. Each first electrode part 60 is provided across the insulating films 303 to 306 in the Z direction. The plurality of first conductive layers 61 are in contact with the first electrode plate 40 in the Z direction. On the other hand, the plurality of first conductive layers 61 are spaced apart from the second electrode plate 50 in the Z direction. An insulating layer 30 (insulating film 307) is interposed between the plurality of first conductive layers 61 and the second electrode plate 50 in the Z direction.

[0028] Each first conductive layer 61 may include a plurality of first wirings 62, first vias 63, and first electrode vias 64. In one example, a plurality of first vias 63 may be provided. In one example, a plurality of first electrode vias 64 may be provided.

[0029] The multiple first wirings 62 are arranged in the Z direction. The multiple first wirings 62 are arranged at a distance from each other in the Z direction. Each first wiring 62 extends in the Y direction in a planar view. One of the multiple first wirings 62 is provided on the insulating film 304. Another of the multiple first wirings 62 is provided on the insulating film 306. Hereinafter, the first wiring 62 provided on the insulating film 304 will be referred to as the "first wiring 62A," and the first wiring 62B provided on the insulating film 306 will be referred to as the "first wiring 62B."

[0030] The first wirings 62A and 62B are arranged so as to overlap each other in a plan view. The width W1A of the first wiring 62A may be equal to the width W1B of the first wiring 62B. The length L1A of the first wiring 62A may be equal to the length L1B of the first wiring 62B. The lengths L1A and L1B of the first wiring 62A and 62B are shorter than the length LP1 of the first electrode plate 40 in the Y direction. The lengths L1A and L1B of the first wiring 62A and 62B are shorter than the length LP2 of the second electrode plate 50 in the Y direction. The first wiring 62B faces the second electrode plate 50 in the Z direction. More specifically, the first wiring 62B faces the second electrode plate 50 with the insulating film 307 interposed therebetween. Therefore, the distance DC between the first wiring 62A and the first wiring 62B in the Z direction (see FIG. 4) may be equal to the distance DD between the first wiring 62B and the second electrode plate 50 in the Z direction (see FIG. 3).

[0031] The first wiring 62A includes wiring side surfaces 62AA and 62AB that form both end surfaces in the X direction. The wiring side surfaces 62AA and 62AB are configured, for example, in the YZ plane. When viewed from the X direction, the wiring side surfaces 62AA and 62AB are rectangular with the long side extending in the Y direction and the short side extending in the Z direction.

[0032] The first wiring 62B includes wiring side surfaces 62BA and 62BB that form both end surfaces in the X direction. The wiring side surfaces 62BA and 62BB are configured, for example, in the YZ plane. When viewed from the X direction, the wiring side surfaces 62BA and 62BB are rectangular with their long sides extending in the Y direction and their short sides extending in the Z direction.

[0033] Each first via 63 electrically connects the first wirings 62A, 62B adjacent to each other in the Z direction. In other words, the first wirings 62A, 62B adjacent to each other in the Z direction are electrically connected to each other by a plurality of first vias 63. The plurality of first vias 63 are arranged spaced apart from each other in the Y direction. Each first via 63 is provided in the insulating film 305.

[0034] Each of the first vias 63 may have a quadrangular prism shape. Therefore, each of the first vias 63 includes via side surfaces 63A, 63B that form both end surfaces in the X direction. The via side surfaces 63A, 63B are formed, for example, by a YZ plane. In the first embodiment, each of the first vias 63 is provided so that its length (dimension in the Y direction) is longer than its thickness (dimension in the Z direction). Therefore, when viewed from the X direction, the via side surfaces 63A, 63B have a rectangular shape with the long side in the Y direction and the short side in the Z direction. In the first embodiment, the dimension in the Y direction of the via side surfaces 63A, 63B is smaller than 1.5 times the dimension in the Z direction of the via side surfaces 63A, 63B.

[0035] Each first electrode via 64 connects the first wiring 62A, 62B that is closest to the first electrode plate 40 to the first electrode plate 40. It can be said that the first wiring 62A and the first electrode plate 40 are electrically connected by the multiple first electrode vias 64. In one example, the multiple first electrode vias 64 may be arranged at positions that overlap with the multiple first vias 63 in a plan view. Each first electrode via 64 is arranged closer to the first electrode plate 40 than each second electrode part 70 in the Z direction.

[0036] Each of the first wirings 62A and 62B, the first via 63, and the first electrode via 64 may be composed of a single metal layer or may have a laminated structure of multiple different metal layers. Each of the first wirings 62A and 62B, the first via 63, and the first electrode via 64 may contain, for example, at least one of copper, aluminum, an aluminum alloy, a copper alloy, tungsten, molybdenum, nickel, titanium, titanium nitride, tantalum, and tantalum nitride. In one example, each of the first wirings 62A and 62B may be composed of a material containing at least one of aluminum and copper. In the first embodiment, each of the first wirings 62A and 62B is composed of a material containing aluminum. That is, the first electrode plate 40, the second electrode plate 50, and the first wirings 62A and 62B may be composed of the same material. In one example, the first via 63 may be composed of a material containing tungsten. That is, the first via 63 may be made of a different material from the first wirings 62A and 62B. In one example, the first electrode via 64 may be made of a material containing tungsten. That is, the first electrode via 64 may be made of a different material from the first wirings 62A and 62B. Furthermore, the first electrode via 64 may be made of the same material as the first via 63.

[0037] The material forming the first wiring 62A, 62B may be different from the material forming the first electrode plate 40 and the second electrode plate 50. The material forming the first wiring 62A may be different from the material forming the first wiring 62B. The first electrode via 64 may be made of a different material from the first via 63. The first wiring 62A, 62B, the first via 63, and the first electrode via 64 may be made of the same material.

[0038] As shown in FIGS. 3 and 5, each second electrode part 70 is electrically connected to the second electrode plate 50. Each second electrode part 70 is composed of a plurality of second conductive layers 71 stacked from the second electrode plate 50 toward the first electrode plate 40. Each second electrode part 70 is provided across the insulating films 307 to 304 in the Z direction. The plurality of second conductive layers 71 are in contact with the second electrode plate 50 in the Z direction. On the other hand, the plurality of second conductive layers 71 are spaced apart from the first electrode plate 40 in the Z direction. An insulating layer 30 (insulating film 303) is interposed between the plurality of second conductive layers 71 and the first electrode plate 40 in the Z direction.

[0039] Each second conductive layer 71 may include a plurality of second wirings 72, second vias 73, and second electrode vias 74. In one example, a plurality of second vias 73 may be provided. In one example, a plurality of second electrode vias 74 may be provided.

[0040] The multiple second wirings 72 are arranged in the Z direction. The multiple second wirings 72 are arranged at a distance from each other in the Z direction. Each second wiring 72 extends in the Y direction in a planar view. One of the multiple second wirings 72 is provided on the insulating film 304. Another of the multiple second wirings 72 is provided on the insulating film 306. Hereinafter, the second wiring 72 provided on the insulating film 306 will be referred to as the "second wiring 72A," and the second wiring 72 provided on the insulating film 304 will be referred to as the "second wiring 72B."

[0041] The second wiring 72A is provided at the same position as the first wiring 62B in the Z direction. The second wiring 72B is provided at the same position as the first wiring 62A in the Z direction. The second wirings 72A and 72B are arranged at positions that overlap each other in a plan view.

[0042] The width W2A of the second wiring 72A may be equal to the width W2B of the second wiring 72B. The widths W2A and W2B of the second wirings 72A and 72B may be equal to the widths W1A and W1B of the first wirings 62A and 62B. The length L2A of the second wiring 72A may be equal to the length L2B of the second wiring 72B. The lengths L2A and L2B of the second wirings 72A and 72B may be equal to the lengths L1A and L1B of the first wirings 62A and 62B.

[0043] The second wiring 72A includes wiring side surfaces 72AA and 72AB that form both end surfaces in the X direction. The wiring side surfaces 72AA and 72AB are configured, for example, in the YZ plane. When viewed from the X direction, the wiring side surfaces 72AA and 72AB are rectangular with their long sides extending in the Y direction and their short sides extending in the Z direction.

[0044] The second wiring 72B includes wiring side surfaces 72BA and 72BB that form both end surfaces in the X direction. The wiring side surfaces 72BA and 72BB are configured, for example, in the YZ plane. When viewed from the X direction, the wiring side surfaces 72BA and 72BB are rectangular with their long sides extending in the Y direction and their short sides extending in the Z direction.

[0045] When the lengths L2A, L2B of the second wirings 72A, 72B are equal to the lengths L1A, L1B of the first wirings 62A, 62B (see Figure 4), the area of ​​the wiring sides 72AA, 72AB is equal to the area of ​​the wiring sides 62BA, 62BB of the first wiring 62B, and the area of ​​the wiring sides 72BA, 72BB is equal to the area of ​​the wiring sides 62AA, 62AB of the first wiring 62A.

[0046] The second wiring 72A faces the first wiring 62B in the X direction. More specifically, a wiring side surface 72AA of the second wiring 72A faces the wiring side surface 62BB of the first wiring 62B in the X direction. Because the wiring side surfaces 72AA and 62BB are both in the YZ plane, the distance between the wiring side surface 72AA and the wiring side surface 62BB in the X direction is constant throughout the wiring side surfaces 72AA and 62BB in the Y direction and is also constant throughout the wiring side surfaces 72AA and 62BB in the Z direction. Furthermore, a wiring side surface 72AB of the second wiring 72A faces the wiring side surface 62BA of another first wiring 62B in the X direction. More specifically, the wiring side surface 72AB of the second wiring 72A faces the wiring side surface 62BA of the other first wiring 62B in the X direction. Since both wiring sides 72AB and 62BA are in the YZ plane, the distance between wiring sides 72AB and 62BA in the X direction is constant throughout the Y direction of wiring sides 72AB and 62BA, and is also constant throughout the Z direction of wiring sides 72AB and 62BA.

[0047] The second wiring 72B faces the first wiring 62A in the X direction. More specifically, a wiring side surface 72BA of the second wiring 72B faces the wiring side surface 62AB of the first wiring 62A in the X direction. Because the wiring side surfaces 72BA and 62AB are both in the YZ plane, the distance between the wiring side surface 72BA and the wiring side surface 62AB in the X direction is constant throughout the wiring side surfaces 72BA and 62AB in the Y direction and is also constant throughout the wiring side surfaces 72BA and 62AB in the Z direction. Furthermore, a wiring side surface 72BB of the second wiring 72B faces the wiring side surface 62AA of another first wiring 62A in the X direction. More specifically, the wiring side surface 72BB of the second wiring 72B faces the wiring side surface 62AA of the other first wiring 62A in the X direction. Since both wiring sides 72BB and 62AA are in the YZ plane, the distance between wiring side 72BB and wiring side 62AA in the X direction is constant throughout the Y direction of wiring sides 72BB and 62AA, and is also constant throughout the Z direction of wiring sides 72BB and 62AA.

[0048] The second wiring 72B faces the first electrode plate 40 in the Z direction. More specifically, the second wiring 72B faces the first electrode plate 40 via the insulating film 303. Therefore, the distance DE (see FIG. 5) between the second wiring 72A and the second wiring 72B in the Z direction may be equal to the distance DF (see FIG. 3) between the second wiring 72B and the first electrode plate 40 in the Z direction. The distance DF may be equal to the distance DD between the first wiring 62B and the second electrode plate 50 in the Z direction.

[0049] Each second via 73 electrically connects the second wirings 72A, 72B adjacent to each other in the Z direction. In other words, the second wirings 72A, 72B adjacent to each other in the Z direction are electrically connected to each other by the plurality of second vias 73. The plurality of second vias 73 are arranged spaced apart from each other in the Y direction. Each second via 73 is provided in the insulating film 305. That is, each second via 73 is arranged at the same position as each first via 63 in the Z direction. In one example, the sizes of the plurality of second vias 73 may be equal to each other. In one example, the sizes of the plurality of second vias 73 may be equal to the sizes of the plurality of first vias 63.

[0050] Each second via 73 may have a quadrangular prism shape. Therefore, each second via 73 includes via side surfaces 73A and 73B that form both end surfaces in the X direction. The via side surfaces 73A and 73B are configured by, for example, a YZ plane. In the first embodiment, each second via 73 is provided so that its length (dimension in the Y direction) is longer than its thickness (dimension in the Z direction). Therefore, when viewed from the X direction, the via side surfaces 73A and 73B have a rectangular shape with the long side in the Y direction and the short side in the Z direction. In the first embodiment, the dimension in the Y direction of the via side surfaces 73A and 73B is smaller than 1.5 times the dimension in the Z direction of the via side surfaces 73A and 73B. The length (dimension in the Y direction) of the second via 73 may be equal to the length (dimension in the Y direction) of the first via 63.

[0051] The multiple second vias 73 may face the corresponding multiple first vias 63 in the X direction. More specifically, the via side surface 73A of the second via 73 may face the via side surface 63B of the first via 63 in the X direction. Because the via side surfaces 73A and 63B are both in the YZ plane, the distance between the via side surface 73A and the via side surface 63B in the X direction is constant over the entire Y direction of the via side surfaces 73A and 63B, and is also constant over the entire Z direction of the via side surfaces 73A and 63B. Furthermore, the via side surface 73B of the second via 73 faces the via side surface 63A of another first via 63 in the X direction. More specifically, the via side surface 73B of the second via 73 faces the via side surface 63A of the other first via 63 in the X direction. Since both via sides 73B and 63A are in the YZ plane, the distance between via side 73B and via side 63A in the X direction is constant throughout the Y direction of via sides 73B and 63A, and is also constant throughout the Z direction of via sides 73B and 63A.

[0052] Each second electrode via 74 connects the second wiring 72A, 72B that is closest to the second electrode plate 50 to the second electrode plate 50. It can be said that the second wiring 72A and the second electrode plate 50 are electrically connected by the multiple second electrode vias 74. In one example, the multiple second electrode vias 74 may be arranged at positions that overlap with the multiple second vias 73 in a plan view. In the first embodiment, each second electrode via 74 is provided in the insulating film 307. Therefore, each second electrode via 74 is provided closer to the second electrode plate 50 than the first electrode part 60 in the Z direction.

[0053] Each of the second wirings 72A and 72B, the second vias 73, and the second electrode vias 74 may be composed of a single metal layer or may have a laminated structure of multiple different metal layers. Each of the second wirings 72A and 72B, the second vias 73, and the second electrode vias 74 may contain, for example, at least one of copper, aluminum, an aluminum alloy, a copper alloy, tungsten, molybdenum, nickel, titanium, titanium nitride, tantalum, and tantalum nitride. In one example, each of the second wirings 72A and 72B may be composed of a material containing at least one of aluminum and copper. In the first embodiment, each of the second wirings 72A and 72B is composed of a material containing aluminum. That is, the first electrode plate 40, the second electrode plate 50, the first wirings 62A and 62B, and the second wirings 72A and 72B may be composed of the same material. In one example, the second via 73 may be composed of a material containing tungsten. That is, the second via 73 may be made of a different material from the second wirings 72A and 72B. The second via 73 may be made of the same material as the first via 63. In one example, the second electrode via 74 may be made of a material containing tungsten. That is, the second electrode via 74 may be made of a different material from the second wirings 72A and 72B. Furthermore, the second electrode via 74 may be made of the same material as the second via 73. The second electrode via 74 may be made of the same material as the first electrode via 64.

[0054] The material forming the second wiring 72A, 72B may be different from the material forming the first electrode plate 40 and the second electrode plate 50. The material forming the second wiring 72A may be different from the material forming the second wiring 72B. The second electrode via 74 may be made of a different material from the second via 73. The second wiring 72A, 72B, the second via 73, and the second electrode via 74 may be made of the same material.

[0055] This capacitor 10 is composed of a first electrode part 60, a second electrode part 70, and an insulating layer 30 between the first electrode part 60 and the second electrode part 70 in the X direction. More specifically, a portion of the capacitor is composed of a first wiring 62A, a second wiring 72B, and an insulating layer 30 between the first wiring 62A and the second wiring 72B in the X direction. A portion of the capacitor is composed of the first wiring 62B, the second wiring 72A, and an insulating layer 30 between the first wiring 62B and the second wiring 72A in the X direction. A portion of the capacitor is composed of a plurality of first vias 63, a plurality of second vias 73, and an insulating layer 30 between the plurality of first vias 63 and the plurality of second vias 73 in the X direction. A portion of the capacitor is composed of the first wiring 62B, a second electrode plate 50, and an insulating layer 30 between the first wiring 62B and the second electrode plate 50 in the Z direction. The second wiring 72B, the first electrode plate 40, and the insulating layer 30 between the second wiring 72B and the first electrode plate 40 in the Z direction form a part of a capacitor.

[0056] [Operation of the first embodiment] The operation of the capacitor 10 of the first embodiment will be described. The parasitic capacitance between the second electrode of the capacitor and the semiconductor substrate (hereinafter referred to as "parasitic capacitance Cts") is large in a configuration in which the second wiring of the second electrode part and the semiconductor substrate face each other with only an insulating layer interposed therebetween (hereinafter referred to as "comparative configuration"). In other words, the parasitic capacitance Cts is large when the second wiring of the second electrode part and the semiconductor substrate face each other directly without any other conductive layer interposed between them.

[0057] In this regard, in the capacitor 10 of the first embodiment, the first electrode plate 40 is interposed between the second electrode part 70 and the semiconductor substrate 20 in the Z direction, and therefore, part of the capacitor is formed between the second electrode part 70 and the first electrode plate 40, while parasitic capacitance is unlikely to be formed between the second electrode part 70 and the semiconductor substrate 20. Therefore, the parasitic capacitance Cts between the second electrode PE2 and the semiconductor substrate 20 is small.

[0058] [Effects of the first embodiment] The capacitor 10 of the first embodiment provides the following effects. (1-1) The capacitor 10 includes a semiconductor substrate 20 including a first substrate surface 21, an insulating layer 30 provided on the first substrate surface 21, and a first electrode PE1 and a second electrode PE2 provided within the insulating layer 30 and facing each other. The first electrode PE1 includes a first electrode plate 40 and a plurality of first electrode parts 60. The second electrode PE2 includes a second electrode plate 50 and a plurality of second electrode parts 70. The first electrode plate 40 is provided within the insulating layer 30 closer to the first substrate surface 21 and faces the first substrate surface 21. The second electrode plate 50 is located within the insulating layer 30 on the opposite side of the first substrate surface 21 with respect to the first electrode plate 40 and faces the first electrode plate 40. The plurality of first electrode parts 60 are disposed between the first electrode plate 40 and the second electrode plate 50 and are electrically connected to the first electrode plate 40. The plurality of second electrode parts 70 are disposed between the second electrode plate 50 and the first electrode plate 40 and are electrically connected to the second electrode plate 50. The plurality of first electrode parts 60 and the plurality of second electrode parts 70 are alternately disposed in the X direction, which is a first direction orthogonal to the thickness direction of the semiconductor substrate 20, and face each other in the X direction. The first electrode plate 40 is interposed between the plurality of second electrode parts 70 and the semiconductor substrate 20.

[0059] According to this configuration, the multiple second electrode parts 70 are provided between the first electrode plate 40 and the second electrode plate 50 in the Z direction, and therefore the first electrode plate 40 is interposed between the multiple second electrode parts 70 and the semiconductor substrate 20 in the Z direction. This prevents the multiple second electrode parts 70 and the semiconductor substrate 20 from directly facing each other, making it difficult for parasitic capacitance to be formed between the multiple second electrode parts 70 and the semiconductor substrate 20. Therefore, the parasitic capacitance Cts between the second electrode PE2 and the semiconductor substrate 20 can be reduced.

[0060] (1-2) The first electrode part 60 is composed of a plurality of first conductive layers 61 stacked from the first electrode plate 40 toward the second electrode plate 50. The second electrode part 70 is composed of a plurality of second conductive layers 71 stacked from the second electrode plate 50 toward the first electrode plate 40.

[0061] With this configuration, the opposing area between the first electrode part 60 and the second electrode part 70 is larger than when the first electrode part 60 is formed of one first conductive layer 61 and the second electrode part 70 is formed of one second conductive layer 71. This allows the capacitance of the capacitor 10 to be increased. Furthermore, for a capacitor with the same capacitance, the number of first electrode parts 60 and second electrode parts 70 can be reduced compared to when the first electrode part 60 is formed of one first conductive layer 61 and the second electrode part 70 is formed of one second conductive layer 71. This allows the capacitor 10 to be made smaller.

[0062] (1-3) The multiple first conductive layers 61 include multiple first wirings 62A, 62B arranged in the Z direction, a first via 63 that electrically connects the first wirings 62A, 62B adjacent to each other in the Z direction, and a first electrode via 64 that connects the first wiring 62A of the multiple first wirings 62A, 62B that is closest to the first electrode plate 40 to the first electrode plate 40. The multiple second conductive layers 71 include multiple second wirings 72A, 72B arranged in the Z direction, a second via 73 that electrically connects the second wirings 72A, 72B adjacent to each other in the Z direction, and a second electrode via 74 that connects the second wiring 72A of the multiple second wirings 72A, 72B that is closest to the second electrode plate 50 to the second electrode plate 50.

[0063] According to this configuration, the multiple first conductive layers 61 are formed by a stacked structure of wiring and vias, so that the multiple first conductive layers 61 can be easily formed stacked from the first electrode plate 40 toward the second electrode plate 50. The multiple second conductive layers 71 are formed by a stacked structure of wiring and vias, so that the multiple second conductive layers 71 can be easily formed stacked from the second electrode plate 50 toward the first electrode plate 40.

[0064] (1-4) Each of the multiple first wirings 62A, 62B extends in the Y direction, which is a second direction perpendicular to the X direction in a plan view. The first wirings 62A, 62B adjacent to each other in the Z direction are electrically connected by multiple first vias 63. Each of the multiple second wirings 72A, 72B extends in the Y direction. The second wirings 72A, 72B adjacent to each other in the Z direction are electrically connected by multiple second vias 73.

[0065] This configuration can reduce the electrical resistance in the multiple first conductive layers 61 compared to when there is one first via 63. It can also reduce the electrical resistance in the multiple second conductive layers 71 compared to when there is one second via 73. This can reduce heat generation in the capacitor 10.

[0066] (1-5) The multiple first wirings 62A and 62B and the multiple second wirings 72A and 72B face each other in the X direction. According to this configuration, the first wirings 62A, 62B and the second wirings 72A, 72B face each other in the X direction, thereby forming a capacitor. Furthermore, compared to a configuration in which the first wirings 62A, 62B and the second wirings 72A, 72B face each other in the Y direction, the facing area between the first wirings 62A, 62B and the second wirings 72A, 72B is larger. This increases the facing area between the first electrode parts 60 and the second electrode parts 70. Therefore, the capacitance of the capacitor 10 can be increased. Furthermore, for a capacitor with the same capacitance, the number of first electrode parts 60 and second electrode parts 70 can be reduced compared to a configuration in which the first wirings 62A, 62B and the second wirings 72A, 72B do not face each other in the X direction. Therefore, the capacitor 10 can be made smaller.

[0067] (1-6) The lengths L1A and L1B of the first wirings 62A and 62B in the Y direction are equal to the lengths L2A and L2B of the second wirings 72A and 72B in the Y direction, respectively. According to this configuration, the opposing area between the plurality of first wirings 62A, 62B and the plurality of second wirings 72A, 72B can be increased without excessively increasing the dimension of the capacitor 10 in the Y direction.

[0068] (1-7) Each of the first vias 63 faces each of the second vias 73 in the X direction. With this configuration, the opposing area of ​​the first electrode part 60 and the second electrode part 70 opposing each other in the X direction is larger than when there is only one first via 63 and one second via 73. This allows the capacitance of the capacitor 10 to be increased. Furthermore, for a capacitor with the same capacitance, the number of first electrode parts 60 and second electrode parts 70 can be reduced compared to when there is only one first via 63 and one second via 73. This allows the capacitor 10 to be made smaller.

[0069] (1-8) The second wiring 72A (72B) is disposed at the center in the X direction between two first wirings 62A (62B) adjacent to each other in the X direction. According to this configuration, the variation in the distance between the second wiring 72A (72B) and the first wiring 62A (62B) can be reduced, thereby suppressing a decrease in the breakdown voltage of the capacitor 10 caused by the distance between the second wiring 72A (72B) and the first wiring 62A (62B) becoming excessively small.

[0070] (1-9) The insulating layer 30 is made of a material containing SiO2. This configuration can suppress a decrease in the breakdown voltage of the capacitor 10 compared to when the insulating layer 30 is made of an insulating material, such as silicon nitride, that has a higher relative dielectric constant than SiO2.

[0071] (1-10) The second electrode plate 50 is located on the opposite side of the first substrate surface 21 of the semiconductor substrate 20 from the plurality of first electrode parts 60 in the Z direction, and faces each of the plurality of first electrode parts 60.

[0072] With this configuration, a portion of the capacitor can be formed between the second electrode plate 50 and the plurality of first electrode parts 60, thereby further increasing the capacitance of the capacitor 10. Furthermore, for a capacitor with the same capacitance, the number of first electrode parts 60 and second electrode parts 70 can be reduced compared to a configuration in which the second electrode plate 50 and the plurality of first electrode parts 60 do not face each other. Therefore, the capacitor 10 can be made smaller.

[0073] Second Embodiment A capacitor 10 according to a second embodiment will be described with reference to Figures 6 to 9. The capacitor 10 according to the second embodiment differs from the capacitor 10 according to the first embodiment mainly in that it includes first electrode parts 80 and second electrode parts 90 instead of the first electrode parts 60 and second electrode parts 70. In the following, components common to the first embodiment are denoted by the same reference numerals, and their description will be omitted.

[0074] Fig. 6 is a schematic perspective view of the capacitor 10 of the second embodiment. Fig. 7 is a schematic plan view of the capacitor 10 of Fig. 6. Fig. 8 is a schematic cross-sectional view of the capacitor 10 taken along line F8-F8 in Fig. 7. Fig. 9 is a schematic cross-sectional view of the capacitor 10 taken along line F9-F9 in Fig. 7.

[0075] As shown in FIGS. 6 to 9 , the first electrode PE1 of the capacitor 10 includes a first electrode plate 40 and a plurality of first electrode parts 80. The second electrode PE2 includes a second electrode plate 50 and a plurality of second electrode parts 90. Each of the first electrode parts 80 and each of the second electrode parts 90 are disposed between the first electrode plate 40 and the second electrode plate 50 in the Z direction. Each of the first electrode parts 80 is electrically connected to the first electrode plate 40. Each of the second electrode parts 90 is electrically connected to the second electrode plate 50. In the second embodiment, the plurality of first electrode parts 80 are disposed spaced apart from one another in both the X direction and the Y direction. In one example, the plurality of first electrode parts 80 are disposed in a matrix. The plurality of second electrode parts 90 are disposed spaced apart from one another in both the X direction and the Y direction. In one example, the plurality of second electrode parts 90 are disposed in a matrix.

[0076] The multiple first electrode parts 80 and the multiple second electrode parts 90 are arranged alternately in the X direction and face each other in the X direction in a plan view, and are arranged alternately in the Y direction and face each other in the Y direction. In the second embodiment, the multiple first electrode parts 80 and the multiple second electrode parts 90 are arranged alternately one by one in the X direction in a plan view. The multiple first electrode parts 80 and the multiple second electrode parts 90 are arranged alternately one by one in the Y direction in a plan view.

[0077] The arrangement pitch PX1 of the multiple first electrode parts 80 in the X direction may be equal to the arrangement pitch PY1 of the multiple first electrode parts 80 in the Y direction. In one example, the arrangement pitch PX1 may be equal to the arrangement pitch PX2 of the multiple second electrode parts 90 in the X direction.

[0078] 6 , the distance DG between the first electrode part 80 and the second electrode part 90 in the X direction is greater than the distance DH between the first electrode part 80 and the second electrode part 90 in the Y direction. In one example, the distance DG1 between the first electrode part 80 and the second electrode part 90 in one direction in the X direction of the distance DG may be equal to the distance DG2 between the first electrode part 80 and the second electrode part 90 in the other direction in the X direction of the distance DG. In one example, the distance DH1 between the first electrode part 80 and the second electrode part 90 in one direction in the Y direction of the distance DH may be equal to the distance DH2 between the first electrode part 80 and the second electrode part 90 in the other direction in the Y direction of the distance DH.

[0079] The relationship between the distance DH and the distance DG can be changed arbitrarily. In one example, the distance DG may be smaller than the distance DH. In another example, the distance DG may be equal to the distance DH. When the distance DG is equal to the distance DH, the first electrode parts 80 and the second electrode parts 90 can be arranged closely together while reducing the breakdown voltage of the capacitor 10.

[0080] 7, the multiple first electrode parts 80 may be arranged within a range overlapping with the second electrode plate 50 in a plan view. The multiple second electrode parts 90 may be arranged within a range overlapping with the second electrode plate 50 in a plan view. Although not shown, the second electrode plate 50 and the multiple second electrode parts 90 may be arranged within a range overlapping with the first electrode plate 40 in a plan view. Although not shown, the multiple first electrode parts 80 may be arranged within a range overlapping with the first electrode plate 40 in a plan view.

[0081] 8 and 9, each first electrode part 80 is composed of a plurality of first conductive layers 81 stacked from the first electrode plate 40 toward the second electrode plate 50. Of the plurality of first conductive layers 81, the first conductive layer 81 closest to the first electrode plate 40 is in contact with the first electrode plate 40 in the Z direction. On the other hand, of the plurality of first conductive layers 81, the first conductive layer 81 closest to the second electrode plate 50 is separated from the second electrode plate 50 in the Z direction. An insulating layer 30 (insulating film 307) is interposed between the first conductive layer 81 and the second electrode plate 50 in the Z direction.

[0082] The first conductive layer 81 may include a plurality of first wirings 82, one first via 83, and one first electrode via 84. The multiple first wirings 82 are arranged in the Z direction. The multiple first wirings 82 are arranged at a distance from each other in the Z direction. Each first wiring 82 has a rectangular parallelepiped shape with a dimension longer in the Y direction than in the X direction. One of the multiple first wirings 82 is provided on the insulating film 304. Another of the multiple first wirings 82 is provided on the insulating film 306. Hereinafter, the first wiring 82 provided on the insulating film 304 will be referred to as the "first wiring 82A," and the first wiring 82B provided on the insulating film 306 will be referred to as the "first wiring 82B."

[0083] The first wiring 82A, 82B are arranged so as to overlap each other in a plan view. The width W1C of the first wiring 82A may be equal to the width W1D of the first wiring 82B. The length L1C of the first wiring 82A may be equal to the length L1D of the first wiring 82A. The first wiring 82B faces the second electrode plate 50 in the Z direction. More specifically, the first wiring 82B faces the second electrode plate 50 with an insulating film 307 interposed therebetween. Therefore, the distance DJ between the first wiring 82A and the first wiring 82B in the Z direction may be equal to the distance DK between the first wiring 82B and the second electrode plate 50 in the Z direction.

[0084] The first wiring 82A includes wiring side surfaces 82AA and 82AB that form both end surfaces in the X direction, and wiring side surfaces 82AC and 82AD that form both end surfaces in the Y direction. The wiring side surfaces 82AA and 82AB are formed, for example, on a YZ plane. The wiring side surfaces 82AC and 82AD are formed, for example, on an XZ plane. When viewed from the X direction, the wiring side surfaces 82AA and 82AB are rectangular with long sides in the Y direction and short sides in the Z direction. When viewed from the Y direction, the wiring side surfaces 82AC and 82AD are rectangular with long sides in the X direction and short sides in the Z direction.

[0085] The second wiring 92B includes wiring side surfaces 92BA and 92BB that form both end surfaces in the X direction and wiring side surfaces 92BC and 92BD that form both end surfaces in the Y direction. The wiring side surfaces 92BA and 92BB are formed, for example, in a YZ plane. The wiring side surfaces 92BC and 92BD are formed, for example, in an XZ plane. When viewed from the X direction, the wiring side surfaces 92BA and 92BB are rectangular with long sides in the Y direction and short sides in the Z direction. When viewed from the Y direction, the wiring side surfaces 92BC and 92BD are rectangular with long sides in the X direction and short sides in the Z direction.

[0086] The first via 83 electrically connects the first wirings 82A and 82B adjacent to each other in the Z direction. In other words, the first wirings 82A and 82B adjacent to each other in the Z direction are electrically connected to each other by the first via 83. The first via 83 is provided in the insulating film 305.

[0087] The first via 83 may have a quadrangular prism shape. Therefore, the first via 83 includes via side surfaces 83A and 83B that form both end faces in the X direction and via side surfaces 83C and 83D that form both end faces in the Y direction. The via side surfaces 83A and 83B are formed, for example, in a YZ plane. The via side surfaces 83C and 83D are formed, for example, in an XZ plane. In the second embodiment, the first via 83 is provided so that its length (dimension in the Y direction) is longer than its thickness (dimension in the Z direction). Therefore, the via side surfaces 83A and 83B have a rectangular shape with the long side in the Y direction and the short side in the Z direction when viewed from the X direction. In the second embodiment, the dimension in the Y direction of the via side surfaces 83A and 83B is approximately twice the dimension in the Z direction of the via side surfaces 83A and 83B. Furthermore, in the second embodiment, the first via 83 is provided so that its width (dimension in the X direction) is longer than its thickness (dimension in the Z direction). Therefore, when viewed from the Y direction, the via side surfaces 83C and 83D have a rectangular shape with the long side in the X direction and the short side in the Z direction. In the second embodiment, the dimension of the via side surfaces 83C and 83D in the X direction is smaller than 1.5 times the dimension of the via side surfaces 83C and 83D in the Z direction.

[0088] The first electrode via 84 connects the first wiring 82A, 82B, which is closest to the first electrode plate 40, to the first electrode plate 40. It can be said that the first wiring 82A and the first electrode plate 40 are electrically connected by the first electrode via 84. In one example, the first electrode via 84 may be disposed at a position overlapping with the first via 83 in a plan view.

[0089] Each of the first wirings 82A, 82B, the first via 83, and the first electrode via 84 may be composed of a single metal layer or may have a laminated structure of multiple different metal layers. The materials constituting each of the first wirings 82A, 82B, the first via 83, and the first electrode via 84 may be the same as those of the first wirings 62A, 62B, the first via 63, and the first electrode via 64 of the first embodiment (see FIG. 5).

[0090] Each second electrode part 90 is composed of a plurality of second conductive layers 91 stacked from the second electrode plate 50 toward the first electrode plate 40. Of the plurality of second conductive layers 91, the second conductive layer 91 closest to the second electrode plate 50 is in contact with the second electrode plate 50 in the Z direction. On the other hand, of the plurality of second conductive layers 91, the second conductive layer 91 closest to the first electrode plate 40 is separated from the first electrode plate 40 in the Z direction. An insulating layer 30 is interposed between the second conductive layer 91 and the first electrode plate 40 in the Z direction.

[0091] The second conductive layer 91 may include a plurality of second wirings 92 , one second via 93 , and one second electrode via 94 . The multiple second wirings 92 are arranged in the Z direction. The multiple second wirings 92 are arranged at a distance from each other in the Z direction. Each second wiring 92 has a rectangular parallelepiped shape with a dimension longer in the Y direction than in the X direction in a plan view. One of the multiple second wirings 92 is provided on the insulating film 304. Another of the multiple second wirings 92 is provided on the insulating film 306. Hereinafter, the second wiring 92 provided on the insulating film 304 will be referred to as the "second wiring 92A," and the second wiring 92 provided on the insulating film 306 will be referred to as the "second wiring 92B."

[0092] The second wiring 92A is provided at the same position as the first wiring 82A in the Z direction. The second wiring 92B is provided at the same position as the first wiring 82B in the Z direction. The second wirings 92A and 92B are arranged at positions that overlap each other in a plan view. The second wiring 92A faces the first wiring 82B in the X direction. The second wiring 92A faces another first wiring 82B in the Y direction. The second wiring 92B faces the first wiring 82A in the X direction. The second wiring 92B faces another first wiring 82A in the Y direction.

[0093] The width W2C of the second wiring 92A may be equal to the width W2D of the second wiring 92B. The widths W2C and W2D of the second wirings 92A and 92B may be equal to the widths W1C and W1D of the first wirings 82A and 82B. The length L2C of the second wiring 92A may be equal to the length L2D of the second wiring 92B. The lengths L2C and L2D of the second wirings 92A and 92B may be equal to the lengths L1C and L1D of the first wirings 82A and 82B.

[0094] The second wiring 92A includes wiring side surfaces 92AA and 92AB that form both end surfaces in the X direction, and wiring side surfaces 92AC and 92AD that form both end surfaces in the Y direction. The wiring side surfaces 92AA and 92AB are formed, for example, by a YZ plane. When viewed from the X direction, the wiring side surfaces 92AA and 92AB are rectangular with their long sides in the Y direction and their short sides in the Z direction. The wiring side surfaces 92AC and 92AD are formed, for example, by an XZ plane. When viewed from the Y direction, the wiring side surfaces 92AC and 92AD are rectangular with their long sides in the X direction and their short sides in the Z direction.

[0095] The second wiring 92B includes wiring side surfaces 92BA and 92BB that form both end surfaces in the X direction and wiring side surfaces 92BC and 92BD that form both end surfaces in the Y direction. The wiring side surfaces 92BA and 92BB are formed, for example, by a YZ plane. When viewed from the X direction, the wiring side surfaces 92BA and 92BB are rectangular with their long sides in the Y direction and their short sides in the Z direction. The wiring side surfaces 92BC and 92BD are formed, for example, by an XZ plane. When viewed from the Y direction, the wiring side surfaces 92BC and 92BD are rectangular with their long sides in the X direction and their short sides in the Z direction.

[0096] When the lengths L2C, L2D of the second wirings 92A, 92B are equal to the lengths L1C, L1D of the first wirings 82A, 82B, the area of ​​the wiring sides 92AA, 92AB is equal to the area of ​​the wiring sides 82BA, 82BB of the first wiring 82B, and the area of ​​the wiring sides 92BA, 92BB is equal to the area of ​​the wiring sides 82AA, 82AB of the first wiring 82A.

[0097] When the widths W2C, W2D of the second wirings 92A, 92B are equal to the widths W1C, W2D of the first wirings 82A, 82B, the area of ​​the wiring side surfaces 92AC, 92AD is equal to the area of ​​the wiring side surfaces 82BC, 82BD of the first wiring 82B, and the area of ​​the wiring side surfaces 92BC, 92BD is equal to the area of ​​the wiring side surfaces 82AC, 82AD of the first wiring 82A.

[0098] The second wiring 92A faces the first wiring 82B in the X direction. More specifically, a wiring side surface 92AA of the second wiring 92A faces the wiring side surface 82BB of the first wiring 82B in the X direction. Because the wiring side surfaces 92AA and 82BB are both in the YZ plane, the distance between the wiring side surface 92AA and the wiring side surface 82BB in the X direction is constant throughout the wiring side surfaces 92AA and 82BB in the Y direction and is also constant throughout the wiring side surfaces 92AA and 82BB in the Z direction. Furthermore, a wiring side surface 92AB of the second wiring 92A faces the wiring side surface 82BA of another first wiring 82B in the X direction. More specifically, the wiring side surface 92AB of the second wiring 92A faces the wiring side surface 82BA of the other first wiring 82B in the X direction. Since both wiring sides 92AB and 82BA are in the YZ plane, the distance between wiring side 92AB and wiring side 82BA in the X direction is constant throughout the Y direction of wiring sides 92AB and 82BA, and is also constant throughout the Z direction of wiring sides 92AB and 82BA.

[0099] The second wiring 92A faces the first wiring 82B in the Y direction. More specifically, a wiring side surface 92AC of the second wiring 92A faces a wiring side surface 82BD of the first wiring 82B in the X direction. Because both wiring side surfaces 92AC and 82BD are in the XZ plane, the distance between the wiring side surface 92AC and the wiring side surface 82BD in the Y direction is constant throughout the X direction of the wiring side surfaces 92AC and 82BD, and is also constant throughout the Z direction of the wiring side surfaces 92AC and 82BD. Furthermore, a wiring side surface 92AD of the second wiring 92A faces a wiring side surface 82BC of another first wiring 82B in the X direction. Because both wiring side surfaces 92AD and 82BC are in the XZ plane, the distance between the wiring side surface 92AD and the wiring side surface 82BC in the Y direction is constant throughout the X direction of the wiring side surfaces 92AD and 82BC, and is also constant throughout the Z direction of the wiring side surfaces 92AD and 82BC.

[0100] The second wiring 92B faces the first wiring 82A in the X direction. More specifically, a wiring side surface 92BA of the second wiring 92B faces the wiring side surface 82AB of the first wiring 82A in the X direction. Because the wiring side surfaces 92BA and 82AB are both in the YZ plane, the distance between the wiring side surface 92BA and the wiring side surface 82AB in the X direction is constant throughout the Y direction of the wiring side surfaces 92BA and 82AB, and is also constant throughout the Z direction of the wiring side surfaces 92BA and 82AB. Furthermore, a wiring side surface 92BB of the second wiring 92B faces the wiring side surface 82AA of another first wiring 82A in the X direction. More specifically, the wiring side surface 92BB of the second wiring 92B faces the wiring side surface 82AA of the other first wiring 82A in the X direction. Since both wiring sides 92BB and 82AA are in the YZ plane, the distance between wiring side 92BB and wiring side 82AA in the X direction is constant throughout the Y direction of wiring sides 92BB and 82AA, and is also constant throughout the Z direction of wiring sides 92BB and 82AA.

[0101] The second wiring 92B faces the first wiring 82A in the Y direction. More specifically, a wiring side surface 92BC of the second wiring 92B faces a wiring side surface 82AD of the first wiring 82A in the X direction. Because the wiring side surfaces 92BC and 82AD are both in the XZ plane, the distance between the wiring side surface 92BC and the wiring side surface 82AD in the Y direction is constant throughout the X direction of the wiring side surfaces 92BC and 82AD, and is also constant throughout the Z direction of the wiring side surfaces 92BC and 82AD. Furthermore, a wiring side surface 92BD of the second wiring 92B faces a wiring side surface 82AC of another first wiring 82A in the X direction. Because the wiring side surfaces 92BD and 82AC are both in the XZ plane, the distance between the wiring side surface 92BD and the wiring side surface 82AC in the Y direction is constant throughout the X direction of the wiring side surfaces 92BD and 82AC, and is also constant throughout the Z direction of the wiring side surfaces 92BD and 82AC.

[0102] The second wiring 92B faces the first electrode plate 40 in the Z direction. More specifically, the second wiring 92B faces the first electrode plate 40 via the insulating film 303. Therefore, the distance DL between the second wiring 92A and the second wiring 92B in the Z direction may be equal to the distance DM between the second wiring 92B and the first electrode plate 40 in the Z direction. The distance DL may be equal to the distance DK between the first wiring 82B and the second electrode plate 50 in the Z direction.

[0103] The second via 93 electrically connects the second wirings 92A and 92B adjacent to each other in the Z direction. In other words, the second wirings 92A and 92B adjacent to each other in the Z direction are electrically connected to each other by the second via 93. The second via 93 is provided in the insulating film 305. That is, the second via 93 is disposed at the same position as the first via 83 in the Z direction. The second via 93 may be opposed to the first via 83 in the X direction. The second via 93 may be opposed to another first via 83 in the Y direction. In one example, the size of the second via 93 may be equal to the size of the first via 83.

[0104] The second via 93 may have a quadrangular prism shape. Therefore, the second via 93 includes via side surfaces 93A and 93B that form both end surfaces in the X direction and via side surfaces 93C and 93D that form both end surfaces in the Y direction. The via side surfaces 93A and 93B are formed, for example, by a YZ plane. In the second embodiment, the second via 93 is provided so that its length (dimension in the Y direction) is longer than its thickness (dimension in the Z direction). Therefore, the via side surfaces 93A and 93B are rectangular in shape with the longer side in the Y direction and the shorter side in the Z direction when viewed from the X direction. In the second embodiment, the dimension in the Y direction of the via side surfaces 93A and 93B is smaller than 1.5 times the dimension in the Z direction of the via side surfaces 93A and 93B. The via side surfaces 93C and 93D are formed, for example, by an XZ plane. In the second embodiment, the second via 93 is provided so that its width (dimension in the X direction) is longer than its thickness (dimension in the Z direction). Therefore, when viewed from the Y direction, the via side surfaces 93C and 93D have a rectangular shape with the long side in the X direction and the short side in the Z direction. In the second embodiment, the dimension of the via side surfaces 93C and 93D in the X direction is smaller than 1.5 times the dimension of the via side surfaces 93C and 93D in the Z direction.

[0105] The second via 93 may face the first via 83 in the X direction. More specifically, a via side surface 93A of the second via 93 faces the via side surface 83B of the first via 83 in the X direction. Because the via side surfaces 93A and 83B are both in the YZ plane, the distance between the via side surface 93A and the via side surface 83B in the X direction is constant over the entire Y direction of the via side surfaces 93A and 83B, and is also constant over the entire Z direction of the via side surfaces 93A and 83B. Furthermore, the via side surface 93B of the second via 93 faces the via side surface 83A of another first via 83 in the X direction. More specifically, the via side surface 83B of the second via 93 faces the via side surface 83A of the other first via 83 in the X direction. Since both via sides 93B and 83A are in the YZ plane, the distance between via side 93B and via side 83A in the X direction is constant throughout the Y direction of via sides 93B and 83A, and is also constant throughout the Z direction of via sides 93B and 83A.

[0106] The second via 93 may face the first via 83 in the Y direction. More specifically, a via side surface 93C of the second via 93 faces the via side surface 83D of the first via 83 in the Y direction. Because the via side surfaces 93C and 83D are both in the XZ plane, the distance between the via side surface 93C and the via side surface 83D in the Y direction is constant throughout the X direction of the via side surfaces 93C and 83D, and is also constant throughout the Z direction of the via side surfaces 93C and 83D. Furthermore, the via side surface 93D of the second via 93 faces the via side surface 83C of another first via 83 in the Y direction. Because the via side surfaces 93D and 83C are both in the XZ plane, the distance between the via side surface 93D and the via side surface 83C in the Y direction is constant throughout the X direction of the via side surfaces 93D and 83C, and is also constant throughout the Z direction of the via side surfaces 93D and 83C.

[0107] The second electrode via 94 connects the second wiring 92A, 92B, which is closest to the second electrode plate 50, to the second electrode plate 50. It can be said that the second wiring 92A and the second electrode plate 50 are electrically connected by the second electrode via 94. In one example, the second electrode via 94 may be disposed at a position overlapping with the second via 93 in a plan view. In the second embodiment, the second electrode via 94 is provided in the insulating film 307. For this reason, the second electrode via 94 is provided closer to the first surface 31 of the insulating layer 30 than the first electrode part 80.

[0108] Each of the second wirings 92A, 92B, second vias 93, and second electrode vias 94 may be made of a single metal layer or may have a laminated structure of multiple different metal layers. The materials constituting each of the second wirings 92A, 92B, second vias 93, and second electrode vias 94 may be the same as those of the second wirings 72A, 72B, second vias 73, and second electrode vias 74 of the first embodiment (see FIG. 5).

[0109] The capacitor 10 is composed of a first electrode part 80, a second electrode part 90, and an insulating layer 30 between the first electrode part 80 and the second electrode part 90 in the X direction. More specifically, a portion of the capacitor is composed of a first wiring 82A, a second wiring 92B facing the first wiring 82A in the X direction, and an insulating layer 30 between the first wiring 82A and the second wiring 92B in the X direction. A portion of the capacitor is composed of the first wiring 82A, the second wiring 92B facing the first wiring 82A in the Y direction, and an insulating layer 30 between the first wiring 82A and the second wiring 92B in the Y direction. A portion of the capacitor is composed of the first wiring 82B, the second wiring 92A facing the first wiring 82B in the X direction, and an insulating layer 30 between the first wiring 82B and the second wiring 92A in the X direction. A portion of the capacitor is formed by the first wiring 82B, the second wiring 92A facing the first wiring 82B in the Y direction, and the insulating layer 30 between the first wiring 82B and the second wiring 92A in the Y direction. A portion of the capacitor is formed by the first via 83, the second via 93 facing the first via 83 in the X direction, and the insulating layer 30 between the first via 83 and the second via 93 in the X direction. A portion of the capacitor is formed by the first via 83, the second via 93 facing the first via 83 in the Y direction, and the insulating layer 30 between the first via 83 and the second via 93 in the Y direction. A portion of the capacitor is formed by the first wiring 82B, the second electrode plate 50, and the insulating layer 30 between the first wiring 82B and the second electrode plate 50 in the Z direction. The second wiring 92B, the first electrode plate 40, and the insulating layer 30 between the second wiring 92B and the first electrode plate 40 in the Z direction form a part of a capacitor.

[0110] [Effects of the second embodiment] The capacitor 10 of the second embodiment provides the following effects. (2-1) The multiple first electrode parts 80 and the multiple second electrode parts 90 are arranged alternately in the Y direction in a plan view and face each other in the Y direction. The multiple first electrode parts 80 and the multiple second electrode parts 90 are arranged alternately in the X direction in a plan view and face each other in the X direction.

[0111] With this configuration, the first electrode part 80 and the second electrode part 90 face each other in both the X direction and the Y direction, so the facing area between the first electrode part 80 and the second electrode part 90 can be increased. This increases the capacitance of the capacitor 10. Furthermore, for a capacitor with the same capacitance, the capacitor 10 can be made smaller than if the first electrode part 80 and the second electrode part 90 were to face each other in only one of the X direction and the Y direction.

[0112] (2-2) The plurality of first electrode parts 80 and the plurality of second electrode parts 90 are arranged alternately one by one in the X direction and alternately one by one in the Y direction. According to this configuration, the second electrode parts 90 are arranged on both sides in the X direction and both sides in the Y direction of one first electrode part 80. Furthermore, the first electrode parts 80 are arranged on both sides in the X direction and both sides in the Y direction of one second electrode part 90. This increases the ratio of the area of ​​one first electrode part 80 facing the second electrode part 90 to the area not facing the second electrode part 90. Furthermore, the ratio of the area of ​​one second electrode part 90 facing the first electrode part 80 to the area not facing the first electrode part 80 increases. Therefore, a capacitor can be efficiently formed between the first electrode part 80 and the second electrode part 90.

[0113] (2-3) The arrangement pitch PX1 of the multiple first electrode parts 80 in the X direction is equal to the arrangement pitch PY1 of the multiple first electrode parts 80 in the Y direction. The arrangement pitch PX2 of the multiple second electrode parts 90 in the X direction is equal to the arrangement pitch PY2 of the multiple second electrode parts 90 in the Y direction.

[0114] According to this configuration, the plurality of first electrode parts 80 and the plurality of second electrode parts 90 can be arranged in a matrix so as to face each other in the X direction and the Y direction. This allows the plurality of first electrode parts 80 and the plurality of second electrode parts 90 to be densely arranged.

[0115] (2-4) The multiple first conductive layers 81 of the first electrode part 80 include multiple first wirings 82A, 82B arranged in the Z direction, a first via 83 that electrically connects the first wirings 82A, 82B adjacent to each other in the Z direction, and a first electrode via 84 that connects the first wiring 82A of the multiple first wirings 82A, 82B that is closest to the first electrode plate 40 to the first electrode plate 40. The multiple second conductive layers 91 of the second electrode part 90 include multiple second wirings 92A, 92B arranged in the Z direction, a second via 93 that electrically connects the second wirings 92A, 92B adjacent to each other in the Z direction, and a second electrode via 94 that connects the second wiring 92A of the multiple second wirings 92A, 92B that is closest to the second electrode plate 50 to the second electrode plate 50. The plurality of first wirings 82A, 82B and the plurality of second wirings 92A, 92B face each other in both the X direction and the Y direction.

[0116] With this configuration, a capacitor is formed by the first wirings 82A, 82B and the second wirings 92A, 92B opposing each other in the X direction, and a portion of the capacitor is formed by the first wirings 82A, 82B and the second wirings 92A, 92B opposing each other in the Y direction. Therefore, compared to a configuration in which the first wirings 82A, 82B and the second wirings 92A, 92B are opposed to each other in either the X direction or the Y direction, the opposing area between the first wirings 82A, 82B and the second wirings 92A, 92B is larger. This increases the capacitance of the capacitor 10. Furthermore, for a capacitor with the same capacitance, the number of first electrode parts 80 and the number of second electrode parts 90 can be reduced compared to a configuration in which the first wirings 82A, 82B and the second wirings 92A, 92B are opposed to each other in either the X direction or the Y direction. This reduces the size of the capacitor 10.

[0117] (2-5) The plurality of first vias 83 and the plurality of second vias 93 face each other in both the X direction and the Y direction. According to this configuration, a capacitor is formed by the first via 83 and the second via 93 facing each other in the X direction, and a capacitor is formed by the first via 83 and the second via 93 facing each other in the Y direction. Therefore, the corresponding area between the first via 83 and the second via 93 is larger than in a configuration in which the first via 83 and the second via 93 face each other in only one of the X direction and the Y direction. This allows the capacitance of the capacitor 10 to be increased. Furthermore, for a capacitor with the same capacitance, the number of first electrode parts 80 and the number of second electrode parts 90 can be reduced compared to a configuration in which the first via 83 and the second via 93 face each other in only one of the X direction and the Y direction. This allows the capacitor 10 to be made smaller.

[0118] <Application examples of capacitors> An application example of the capacitor 10 of each embodiment will be described with reference to Fig. 10. Fig. 10 schematically shows the circuit configuration of an ADC (analog-digital converter) 100 including the capacitor 10.

[0119] As shown in FIG. 10, the ADC 100 includes an AD (analog-digital) conversion unit 110 and an abnormality detection unit 120. The AD conversion unit 110 is configured to convert an input signal IN, which is an analog signal, into an output signal OUT, which is a digital signal, and then output the output signal to the outside of the ADC 100. The AD conversion unit 110 may be configured to perform successive approximation AD conversion.

[0120] The AD conversion unit 110 includes a comparator 111, a comparison latch unit 112, a data latch unit 113, a first DAC (digital-to-analog converter) data generation unit 114, a selector 115, and a switch control unit .

[0121] The comparator 111 is configured to output a comparison signal CMP based on a comparison between the input signal IN and analog data ADAT output from a DAC (not shown). More specifically, the comparator 111 is configured to perform a sampling operation of the input signal IN and a comparison operation of comparing the input signal IN with the analog data ADAT.

[0122] The comparator 111 includes a capacitive DAC 130, an inverter 131, and a switch 132. The capacitive DAC 130 includes capacitors C0 to C11 and switches SW0 to SW11. The numbers of the capacitors C0 to C11 and the switches SW0 to SW11 can be changed arbitrarily.

[0123] The first terminals of the capacitors C0 to C11 are commonly connected to an input terminal of the inverter 131. The switches SW0 to SW11 are configured to selectively switch the connection between the second terminal of each of the capacitors C0 to C11 and one of an application terminal for the input signal IN, an application terminal for the high voltage VH, and an application terminal for the low voltage VL. The switch 132 is configured to switch between conduction and cut-off of the input / output terminal of the inverter 131.

[0124] The comparison latch unit 112 is configured to hold the comparison signal CMP output from the comparator 111. That is, the comparison latch unit 112 is configured to hold a 1-bit signal that is either High or Low.

[0125] The data latch unit 113 is configured to hold High or Low data for each bit according to the data held in the comparison latch unit 112. The data latch unit 113 is configured to hold, for example, 12-bit data. The 12-bit data held in the data latch unit 113 is output as an output signal OUT.

[0126] The first DAC data generation unit 114 includes a SAR (Successive Approximation Register). The first DAC data generation unit 114 is configured to generate first DAC data DT1, which is digital data, in accordance with the data held in the comparison latch unit 112.

[0127] During normal operation in which an input signal IN is converted into an output signal OUT, the selector 115 is configured to select the first DAC data DT1 from the first DAC data DT1 and second DAC data DT2 (described later), and then output the selected data to the switch control unit 116.

[0128] The switch control section 116 is configured to control the switches SW0 to SW11 and the switch 132 based on the first DAC data DT1. The abnormality detection unit 120 is provided to check whether the AD conversion unit 110 operates normally. The abnormality detection unit 120 includes a second DAC data generation unit 121 and a data comparison unit 122.

[0129] The second DAC data generation unit 121 includes a register. During a test operation to check whether the AD conversion unit 110 operates normally, the second DAC data generation unit 121 is configured to generate second DAC data DT2, which is predetermined 12-bit data, and output the second DAC data DT2 to the selector 115. During the test operation, the selector 115 is configured to select the second DAC data DT2 from the first DAC data DT1 and the second DAC data DT2, and output the second DAC data DT2 to the DAC.

[0130] The data comparator 122 is configured to compare the second DAC data DT2 output from the second DAC data generator 121 with the output signal OUT, and then output a detection signal FLOUT as the comparison result to the outside of the ADC 100. The detection signal FLOUT is an abnormality detection signal that indicates whether the AD converter 110 is operating normally.

[0131] In such an ADC 100, the capacitor 10 of each embodiment may be applied to the capacitors C0 to C11 in the capacitive DAC of the comparator 111. Furthermore, when the ADC 100 is provided as a semiconductor chip, the capacitor 10 may be provided as a partial region of the semiconductor chip. The capacitance of the capacitor 10 of each embodiment can be increased by the opposing arrangement of the first electrode plate 40, the plurality of first electrode parts 60 (80), the second electrode plate 50, and the plurality of second electrode parts 70 (90). Therefore, for a capacitor 10 with the same capacitance, the capacitor 10 can be made smaller. Therefore, when the ADC 10 is provided as a semiconductor chip, the area occupied by the capacitor 10 can be reduced. Therefore, the semiconductor chip can be made smaller.

[0132] <Example of change> The above-described embodiments can be modified as follows: Furthermore, the above-described embodiments and the following modifications can be combined with each other within the scope of technical compatibility.

[0133] In the first embodiment, the configuration of the multiple first conductive layers 61 of the first electrode part 60 and the configuration of the multiple second conductive layers 71 of the second electrode part 70 can each be changed arbitrarily. In one example, the number of first wirings in the multiple first conductive layers 61 can be changed arbitrarily. In one example, three or more first wirings may be provided spaced apart from each other in the Z direction. The number of first vias 63 may be set, for example, according to the number of first wirings. In another example, there may be one first wiring. When there is one first wiring, the first via 63 may be omitted.

[0134] In one example, the number of second wirings in the multiple second conductive layers 71 can be changed arbitrarily. In one example, three or more second wirings may be provided spaced apart from each other in the Z direction. The number of second vias 73 may be set, for example, according to the number of second wirings. In another example, the number of second wirings may be one. When there is one second wiring, the second via 73 may be omitted.

[0135] In the first embodiment, the shape of the first wirings 62A, 62B as viewed from the Y direction can be changed arbitrarily. For example, as shown in Fig. 11, each of the first wirings 62A, 62B may have a tapered shape in which the width (dimension in the X direction) decreases from the first surface 31 toward the second surface 32 of the insulating layer 30. Note that the first wirings 82A, 82B in the second embodiment may also be changed in a similar manner. The first wirings 82A, 82B may have a quadrangular pyramid shape.

[0136] In the first embodiment, the shape of the second wirings 72A, 72B as viewed from the Y direction can be changed arbitrarily. For example, as shown in Fig. 11, each of the second wirings 72A, 72B may have a tapered shape in which the width (dimension in the X direction) decreases from the first surface 31 toward the second surface 32 of the insulating layer 30. Note that the second wirings 92A, 92B in the second embodiment may also be changed in a similar manner. The second wirings 92A, 92B may have a quadrangular pyramid shape.

[0137] In the first embodiment, the shape of the first via 63 as viewed from the Y direction can be changed arbitrarily. For example, as shown in FIG. 11 , the first via 63 may have a tapered shape in which the width (dimension in the X direction) decreases from the first surface 31 toward the second surface 32 of the insulating layer 30. Note that the first via 83 in the second embodiment may also be changed in a similar manner. The first via 83 may have a quadrangular pyramid shape. For example, the first vias 63, 83 may have a cylindrical shape or a truncated cone shape.

[0138] In the first embodiment, the four corners of the first via 63, which is rectangular in plan view, may be curved and convex outward. Note that the first via 83 in the second embodiment may also be modified in a similar manner.

[0139] In the first embodiment, the shape of the second via 73 as viewed from the Y direction can be changed arbitrarily. For example, as shown in FIG. 11 , the second via 73 may have a tapered shape in which the width (dimension in the X direction) decreases from the first surface 31 toward the second surface 32 of the insulating layer 30. Note that the second via 93 in the second embodiment may also be changed in a similar manner. The second via 93 may have a quadrangular pyramid shape. For example, the second vias 73, 93 may have a cylindrical shape or a truncated cone shape.

[0140] In the first embodiment, the four corners of the second via 73, which is rectangular in plan view, may be curved and convex outward. Note that the second via 93 in the second embodiment may also be modified in a similar manner.

[0141] In the first embodiment, the shape of the first electrode via 64 as viewed from the Y direction can be changed arbitrarily. For example, as shown in Fig. 11, the first electrode via 64 may have a tapered shape in which the width (dimension in the X direction) decreases from the first surface 31 toward the second surface 32 of the insulating layer 30. Note that the first electrode via 84 in the second embodiment may also be changed in a similar manner. The first electrode via 84 may have a quadrangular pyramid shape. In another example, the first electrode vias 64, 84 may have a cylindrical shape or a truncated cone shape.

[0142] In the first embodiment, the shape of the second electrode via 74 as viewed from the Y direction can be changed arbitrarily. For example, as shown in Fig. 11, the second electrode via 74 may have a tapered shape in which the width (dimension in the X direction) decreases from the first surface 31 toward the second surface 32 of the insulating layer 30. Note that the second electrode via 94 in the second embodiment may also be changed in a similar manner. The second electrode via 94 may have a quadrangular pyramid shape. In another example, the second electrode vias 74, 94 may have a cylindrical shape or a truncated cone shape.

[0143] In the first embodiment, the lengths of the first vias 63 and the first electrode vias 64 in the Y direction can be changed arbitrarily. 12, the length of the first via 63 in the Y direction may be greater than 1.5 times the thickness (dimension in the Z direction) of the first via 63. In one example, the length of the first via 63 in the Y direction may be greater than twice the thickness of the first via 63. In one example, the length of the first via 63 in the Y direction may be greater than three times the thickness of the first via 63. In one example, the length of the first via 63 in the Y direction may be greater than twice the width (dimension in the X direction) of the first via 63.

[0144] 12, the length of the first electrode via 64 in the Y direction may be greater than 1.5 times the thickness (dimension in the Z direction) of the first electrode via 64. In one example, the length of the first electrode via 64 in the Y direction may be greater than twice the thickness of the first electrode via 64. In one example, the length of the first electrode via 64 in the Y direction may be greater than three times the thickness of the first electrode via 64. In one example, the length of the first electrode via 64 in the Y direction may be greater than twice the width (dimension in the X direction) of the first electrode via 64.

[0145] 13, the length in the Y direction of the first via 63 may be equal to the length in the Y direction of the first wirings 62A and 62B. In another example, the length in the Y direction of the first electrode via 64 may be equal to the length in the Y direction of the first wirings 62A and 62B.

[0146] In the first embodiment, the thickness (dimension in the Z direction) of each of the first vias 63 and the first electrode vias 64 can be changed arbitrarily. In one example, as shown in FIG. 14, the thickness of the first via 63 may be thicker than the thickness (dimension in the Z direction) of the first wirings 62A, 62B. The thickness of the first electrode via 64 may be thicker than the thickness of the first wirings 62A, 62B. Note that the thickness of each of the first vias 83 and the first electrode vias 84 in the second embodiment may also be changed in a similar manner.

[0147] In the first embodiment, the thickness (dimension in the Z direction) of each of the second vias 73 and the second electrode vias 74 can be changed arbitrarily. In one example, as shown in FIG. 14, the thickness of the second via 73 may be thicker than the thickness (dimension in the Z direction) of the second wirings 72A and 72B. The thickness of the second electrode via 74 may be thicker than the thickness of the second wirings 72A and 72B. Note that the thickness of each of the second vias 93 and the second electrode vias 94 in the second embodiment may also be changed in a similar manner.

[0148] In the first embodiment, the configuration of the first electrode plate 40 can be changed as desired. In one example, as shown in FIG. 15 , the first electrode plate 40 may include a slit 41. The slit 41 is provided at a position different from the multiple first electrode parts 60 in a plan view. A plurality of slits 41 may be provided spaced apart from each other in the X direction and the Y direction. An insulating layer 30 is provided within the slit 41. In the example shown in FIG. 15 , the slit 41 extends in the X direction. That is, the slit 41 extends in a direction perpendicular to the direction in which the first wirings 62A and 62B extend. Note that the slit 41 may also be provided in the first electrode plate 40 of the second embodiment.

[0149] In the first embodiment, the lengths of the first wirings 62A and 62B in the Y direction can be changed arbitrarily. In one example, the lengths of the first wirings 62A and 62B in the Y direction may be different from each other. Note that the lengths of the first wirings 82A and 82B in the Y direction in the second embodiment may also be changed in a similar manner.

[0150] In the first embodiment, the lengths of the second wirings 72A and 72B in the Y direction can be changed arbitrarily. In one example, the lengths of the second wirings 72A and 72B in the Y direction may be different from each other. Note that the lengths of the second wirings 92A and 92B in the Y direction in the second embodiment may also be changed in a similar manner.

[0151] In the first embodiment, the lengths of the first wirings 62A and 62B in the Y direction and the lengths of the second wirings 72A and 72B in the Y direction may be different from each other. Note that the first wirings 82A and 82B and the second wirings 92A and 92B in the second embodiment may also be changed in a similar manner.

[0152] In the first embodiment, it is possible to arbitrarily change the positional relationship between the plurality of first vias 63 and the plurality of second vias 73. For example, the first vias 63 and the second vias 73 do not have to face each other in the X direction.

[0153] In the first embodiment, it is possible to arbitrarily change the positional relationship between the multiple first electrode vias 64 and the multiple second electrode vias 74. In one example, the first electrode vias 64 and the second electrode vias 74 do not have to face each other in the X direction.

[0154] In the first embodiment, the second wirings 72A and 72B may be arranged so as to be shifted from the center in the X direction of the two first wirings 62A and 62B adjacent to each other in the X direction. In the first embodiment, the arrangement pitch P1 of the first electrode parts 60 and the arrangement pitch P2 of the second electrode parts 70 may be different from each other.

[0155] In the first embodiment, the configurations of the first electrode part 60 and the second electrode part 70 can be changed arbitrarily. In one example, as shown in FIG. 16, the multiple first conductive layers 61 of the first electrode part 60 include multiple first wirings 62A, 62B, 62C, multiple first vias 63P, 63Q, and multiple first electrode vias 64.

[0156] The multiple first wirings 62A, 62B, 62C are arranged spaced apart from one another in the Z direction. The first wiring 62A is arranged closer to the first electrode plate 40 than the first wirings 62B, 62C. The first wiring 62A is connected to the first electrode plate 40 by multiple first electrode vias 64. The first wiring 62B is arranged between the first wiring 62A and the first wiring 62C in the Z direction. The first wiring 62A and the first wiring 62B are connected by multiple first vias 63P. The multiple first vias 63P are arranged spaced apart from one another in the Y direction. The first wiring 62B and the first wiring 62C are connected by multiple first vias 63Q. The multiple first vias 63Q are arranged spaced apart from one another in the Y direction.

[0157] The second conductive layers 71 of the second electrode part 70 include second wirings 72A, 72B, and 72C, second vias 73P and 73Q, and second electrode vias 74. The multiple second wirings 72A, 72B, 72C are arranged spaced apart from one another in the Z direction. The second wiring 72A is arranged closer to the second electrode plate 50 than the second wirings 72B, 72C. The second wiring 72A is connected to the second electrode plate 50 by multiple second electrode vias 74. The second wiring 72B is arranged between the second wiring 72A and the second wiring 72C in the Z direction. The second wiring 72A and the second wiring 72B are connected by multiple second vias 73P. The multiple second vias 73P are arranged spaced apart from one another in the Y direction. The second wiring 72B and the second wiring 72C are connected by multiple second vias 73Q. The multiple second vias 73Q are arranged spaced apart from one another in the Y direction.

[0158] The first wiring 62A and the second wiring 72C are disposed at the same position in the Z direction and face each other in the X direction. The first wiring 62B and the second wiring 72B are disposed at the same position in the Z direction and face each other in the X direction. The first wiring 62C and the second wiring 72A are disposed at the same position in the Z direction and face each other in the X direction.

[0159] 16, the first wiring 62B is arranged offset in the X direction with respect to the first wirings 62A and 62C. The second wiring 72B is arranged offset in the X direction with respect to the second wirings 72A and 72C. As a result, the first wiring 62B includes a portion that faces the second wirings 72A and 72C in the Z direction. The second wiring 72B includes a portion that faces the first wirings 62A and 62C in the Z direction.

[0160] Thus, in capacitor 10 of the modified example, a portion of the capacitor is formed by the portions of first wiring 62B and second wiring 72A opposing each other in the Z direction, and a portion of the capacitor is formed by the portions of first wiring 62B and second wiring 72C opposing each other in the Z direction. A portion of the capacitor is formed by the portions of second wiring 72B and first wiring 62A opposing each other in the Z direction, and a portion of the capacitor is formed by the portions of second wiring 72B and first wiring 62C opposing each other in the Z direction. This allows the capacitance of capacitor 10 of the modified example to be increased.

[0161] In the second embodiment, the multiple second electrode parts 90 may be arranged spaced apart in the Y direction, as shown in Fig. 17. In the example shown in Fig. 17, the arrangement pitch PX2 of the multiple second electrode parts 90 in the X direction is equal to the arrangement pitch PY2 of the multiple second electrode parts 90 in the Y direction. The arrangement pitch PY2 of the multiple second electrode parts 90 in the Y direction may also be equal to the arrangement pitch PY1 of the multiple first electrode parts 80 in the Y direction.

[0162] 17, the distance DG between the first electrode part 80 and the second electrode part 90 in the X direction is greater than the distance DH between the first electrode part 80 and the second electrode part 90 in the Y direction. Note that the distance DG may be equal to the distance DH. In this case, the arrangement pitches PY1 and PY2 may be greater than the arrangement pitches PX1 and PX2.

[0163] In the second embodiment, the arrangement pitch PX1 of the multiple first electrode parts 80 in the X direction and the arrangement pitch PX2 of the multiple first electrode parts 80 in the Y direction may be different from each other. Also, the arrangement pitch PX2 of the multiple second electrode parts 90 in the X direction and the arrangement pitch PY2 of the multiple second electrode parts 90 in the Y direction may be different from each other.

[0164] In the second embodiment, the plurality of first wirings 82A, 82B and the plurality of second wirings 92A, 92B may face each other in only one of the X direction and the Y direction. In the second embodiment, the plurality of first vias 83 and the plurality of second vias 93 may face each other in only one of the X direction and the Y direction.

[0165] In the second embodiment, the plurality of first electrode vias 84 and the plurality of second electrode vias 94 may face each other in only one of the X direction and the Y direction. In each embodiment, the second electrode plate 50 may be larger than the first electrode plate 40 in a plan view. Also, in each embodiment, the second electrode plate 50 may be smaller than the first electrode plate 40 in a plan view.

[0166] In each embodiment, the thickness of the insulating film 303 in which the first electrode via 64 is provided can be changed as desired. In one example, the insulating film 303 may be thicker than the insulating films 304 and 306 in which the first wirings 62A and 62B are provided. Furthermore, the insulating film in which the first electrode via 64 is provided may have a stacked structure of multiple insulating films.

[0167] In each embodiment, the thickness of the insulating film 307 in which the second electrode via 74 is provided can be changed as desired. In one example, the insulating film 307 may be thicker than the insulating films 304 and 306 in which the second wirings 72A and 72B are provided. Furthermore, the insulating film in which the second electrode via 74 is provided may be configured with a stacked structure of multiple insulating films.

[0168] In each embodiment, the second electrode plate 50 may be omitted. In each embodiment, the first electrode plate 40 does not have to be electrically connected to the semiconductor substrate 20.

[0169] In each embodiment, the capacitor 10 may include an insulating substrate instead of the semiconductor substrate 20. One or more of the various examples described in the present disclosure may be combined to the extent that they are not technically inconsistent.

[0170] The term "on" as used in this disclosure includes the meanings of "on" and "above" unless the context clearly indicates otherwise. Thus, for example, the expression "a first element is disposed on a second element" means that in some embodiments, the first element may be disposed directly on the second element in contact with the second element, while in other embodiments, the first element may be disposed above the second element without contacting the second element. In other words, the term "on" does not exclude a structure in which another element is formed between the first element and the second element.

[0171] The Z direction used in this disclosure does not necessarily have to be the vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to this disclosure are not limited to the "up" and "down" in the Z axis direction described in this disclosure being "up" and "down" in the vertical direction. For example, the X direction may be the vertical direction, or the Y direction may be the vertical direction.

[0172] <Additional Notes> The technical ideas that can be understood from the present disclosure are described below. Note that, for the purpose of aiding understanding and not intending to be limiting, the components described in the appendices are given the reference numerals of the corresponding components in the above embodiment. The reference numerals are shown as examples to aid understanding, and the components described in each appendix should not be limited to the components indicated by the reference numerals.

[0173] [Appendix 1] a substrate (20) including a first substrate surface (21); an insulating layer (30) provided on the first substrate surface (21); a first electrode (PE1) and a second electrode (PE2) that are provided in the insulating layer (30) and face each other; Equipped with The first electrode (PE1) includes a first electrode plate (40) and a plurality of first electrode parts (60), The second electrode (PE2) includes a second electrode plate (50) and a plurality of second electrode parts (70); the first electrode plate (40) is provided in the insulating layer (30) near the first substrate surface (21) and faces the first substrate surface (21); the second electrode plate (50) is located in the insulating layer (30) on the opposite side of the first substrate surface (21) with respect to the first electrode plate (40), and is provided so as to face the first electrode plate (40); the plurality of first electrode parts (60) are disposed between the first electrode plate (40) and the second electrode plate (50) and are electrically connected to the first electrode plate (40); the plurality of second electrode parts (70) are disposed between the second electrode plate (50) and the first electrode plate (40) and are electrically connected to the second electrode plate (50); the plurality of first electrode parts (60) and the plurality of second electrode parts (70) are alternately arranged in a first direction (X) perpendicular to a thickness direction (Z) of the substrate (20) and face each other in the first direction (X); The first electrode plate (40) is interposed between the plurality of second electrode parts (70) and the substrate (20). Capacitor (10).

[0174] [Appendix 2] The first electrode part (60) is composed of a plurality of first conductive layers (61) stacked from the first electrode plate (40) toward the second electrode plate (50), The second electrode part (70) is composed of a plurality of second conductive layers (71) stacked from the second electrode plate (50) toward the first electrode plate (40). 10. The capacitor of claim 1.

[0175] [Appendix 3] The plurality of first conductive layers (61) are a plurality of first wirings (62A, 62B) arranged in the thickness direction (Z); a first via (63) that electrically connects the first wirings (62A, 62B) adjacent to each other in the thickness direction (Z); a first electrode via (64) that connects the first wiring (62A) that is closest to the first electrode plate (40) among the plurality of first wirings (62A, 62B) to the first electrode plate (40); Including, The plurality of second conductive layers (71) are a plurality of second wirings (72A, 72B) arranged in the thickness direction (Z); a second via (73) that electrically connects the second wirings (72A, 72B) adjacent to each other in the thickness direction (Z); a second electrode via (74) that connects the second wiring (72A) that is closest to the second electrode plate (50) among the plurality of second wirings (72A, 72B) to the second electrode plate (50); Contains 2. A capacitor as defined in claim 2.

[0176] [Appendix 4] Each of the plurality of first wirings (62A, 62B) extends in a second direction (Y) perpendicular to the first direction (X) when viewed from the thickness direction (Z), the first wirings (62A, 62B) adjacent to each other in the thickness direction (Z) are electrically connected to each other by a plurality of the first vias (63); Each of the plurality of second wirings (72A, 72B) extends in the second direction (Y), The second wirings (72A, 72B) adjacent to each other in the thickness direction (Z) are electrically connected to each other by a plurality of the second vias (73). 4. The capacitor of claim 3.

[0177] [Appendix 5] The plurality of first wirings (62A, 62B) and the plurality of second wirings (72A, 72B) face each other in the first direction (X). 5. The capacitor of claim 3 or 4.

[0178] [Appendix 6] A direction perpendicular to the first direction (X) when viewed from the thickness direction (Z) is defined as a second direction (Y), The length (L1A, L1B) of each of the plurality of first wirings (62A, 62B) in the second direction (Y) is equal to the length (L2A, L2B) of each of the plurality of second wirings (72A, 72B) in the second direction (Y). 6. The capacitor according to any one of appendixes 3 to 5.

[0179] [Appendix 7] Each of the plurality of first vias (63) faces each of the plurality of second vias (73) in the first direction (X). 7. The capacitor according to any one of claims 3 to 6.

[0180] [Appendix 8] The second wirings (72A, 72B) are arranged at the center in the first direction (X) of the two first wirings (62A, 62B) adjacent to each other in the first direction (X). 8. The capacitor according to any one of Supplementary Notes 3 to 7.

[0181] [Appendix 9] A direction perpendicular to the first direction (X) when viewed from the thickness direction (Z) is defined as a second direction (Y), The plurality of first electrode parts (80) and the plurality of second electrode parts (90) are alternately arranged in the second direction (Y) when viewed from the thickness direction (Z) and face each other in the second direction (Y). 4. The capacitor according to any one of claims 1 to 3.

[0182] [Appendix 10] The plurality of first electrode parts (80) and the plurality of second electrode parts (90) are arranged alternately one by one in the first direction (X) and alternately one by one in the second direction (Y). 10. The capacitor of claim 9.

[0183] [Appendix 11] The distance (DG) between the first electrode part (80) and the second electrode part (90) in the first direction (X) is equal to the distance (DH) between the first electrode part (80) and the second electrode part (90) in the second direction (Y). 11. The capacitor of claim 10.

[0184] [Appendix 12] The first electrode part (80) is composed of a plurality of first conductive layers (81) stacked from the first electrode plate (40) toward the second electrode plate (50), The second electrode part (90) is composed of a plurality of second conductive layers (91) stacked from the second electrode plate (50) toward the first electrode plate (40). 12. The capacitor according to any one of claims 9 to 11.

[0185] [Appendix 13] The plurality of first conductive layers (81) are a plurality of first wirings (82A, 82B) arranged in the thickness direction (Z); a first via (83) that electrically connects the first wirings (82A, 82B) adjacent to each other in the thickness direction (Z); a first electrode via (84) that connects the first wiring (82A) that is closest to the first electrode plate (40) among the plurality of first wirings (82A, 82B) to the first electrode plate (40); Including, The plurality of second conductive layers (91) are a plurality of second wirings (92A, 92B) arranged in the thickness direction (Z); a second via (93) that electrically connects the second wirings (92A, 92B) adjacent to each other in the thickness direction (Z); a second electrode via (94) that connects the second wiring (92A) that is closest to the second electrode plate (50) among the plurality of second wirings (92A, 92B) to the second electrode plate (50); Including, The plurality of first wirings (82A, 82B) and the plurality of second wirings (92A, 92B) face each other in both the first direction (X) and the second direction (Y). 13. The capacitor of claim 12.

[0186] [Appendix 14] The plurality of first vias (83) and the plurality of second vias (93) face each other in both the first direction (X) and the second direction (Y). 14. The capacitor of claim 13.

[0187] [Appendix 15] The second electrode plate (50) is located on the opposite side of the first substrate surface (21) from the plurality of first electrode parts (60 / 80) in the thickness direction (Z) and faces each of the plurality of first electrode parts (60 / 80). 15. The capacitor according to any one of claims 1 to 14.

[0188] [Appendix 16] The second electrode plate (50) and the plurality of second electrode parts (70 / 90) are arranged within a range overlapping with the first electrode plate (40) when viewed from the thickness direction (Z). 16. The capacitor according to any one of appendices 1 to 15.

[0189] [Appendix 17] The insulating layer (30) is made of an oxide film. 17. The capacitor according to any one of claims 1 to 16.

[0190] [Appendix 18] The insulating layer (30) is made of a material containing SiO2. 18. The capacitor of claim 17.

[0191] [Appendix 19] the substrate (20) is a semiconductor substrate, The first electrode plate (40) is electrically connected to the substrate (20). 19. The capacitor according to any one of claims 1 to 18.

[0192] [Appendix 20] The first electrode plate (40) includes a slit (41) provided at a position different from that of the plurality of second electrode parts (70) when viewed from the thickness direction (Z). 20. The capacitor according to any one of claims 1 to 19.

[0193] [Appendix 21] The first electrode plate (40) and the plurality of first wirings (62A, 62B / 82A, 82B) are made of the same material. A capacitor according to any one of appendixes 3 to 8, 13 and 14.

[0194] [Appendix 22] The second electrode plate (50) and the plurality of second wirings (72A, 72B / 92A, 92B) are made of the same material. A capacitor according to any one of appendixes 3 to 8, 13 and 14.

[0195] [Appendix 23] The first electrode plate (40), the plurality of first wirings (62A, 62B / 82A, 82B), the second electrode plate (50), and the plurality of second wirings (72A, 72B / 92A, 92B) are made of the same material. A capacitor according to any one of appendixes 3 to 8, 13 and 14.

[0196] [Appendix 24] The first electrode plate (40), the plurality of first wirings (62A, 62B / 82A, 82B), the second electrode plate (50), and the plurality of second wirings (72A, 72B / 92A, 92B) are made of a material containing at least one of aluminum and copper. A capacitor according to any one of appendixes 3 to 8, 13 and 14.

[0197] [Appendix 25] The plurality of first wirings (62A, 62B) and the plurality of second wirings (72A, 72B) include portions that face each other in the thickness direction (Z). A capacitor according to any one of appendixes 3 to 8, 13 and 14.

[0198] [Appendix 26] each of the plurality of first wirings (62A, 62B) and the plurality of second wirings (72A, 72B) has a tapered shape that narrows toward the substrate (20) in the thickness direction (Z); Each of the first via (63) and the second via (73) has a tapered shape that narrows toward the substrate (20) in the thickness direction (Z). A capacitor according to any one of appendixes 3 to 8, 13 and 14.

[0199] [Appendix 27] A direction perpendicular to the first direction (X) when viewed from the thickness direction (Z) is defined as a second direction (Y), The length of the first via (63) in the second direction (Y) is equal to the length (L1A, L1B) of the first wiring (62A, 62B) in the second direction (Y), The length of the second via (73) in the second direction (Y) is equal to the lengths (L2A, L2B) of the second wirings (72A, 72B) in the second direction (Y). 9. The capacitor according to any one of Supplementary Notes 3 to 8.

[0200] [Appendix 28] A comparator (111) including a capacitor (10) according to any one of Supplementary Notes 1 to 27; a data generation unit (114) including a successive approximation register and generating digital data; An AD (analog-digital) conversion unit (110) including the comparator (111) is configured to sample an input signal that is an analog signal, and compare the sampled input signal with analog data converted from the data generating unit (114) by a DA converter; the data generation unit (114) is configured to update the digital data in accordance with a comparison result by the comparator (111); The AD conversion unit (110) is configured to output an output signal according to the comparison result by the comparator (111). Analog-to-digital converter (100).

[0201] The above description is merely illustrative. Those skilled in the art will recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of illustrating the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and variations that fall within the scope of the present disclosure, including the claims. [Explanation of symbols]

[0202] 10...Capacitor 20...Semiconductor substrate 21...First board surface 22...Second board surface 30...insulating layer 31...Side 1 32…Second side 33~36…1st~4th side 301~309...Insulating film 40...First electrode plate 41...Slit 50…Second electrode plate 60...First electrode part 61...First conductive layer 62, 62A, 62B, 62C...First wiring 62AA, 62AB, 62BA, 62BB...Wiring side 63, 63P, 63Q...First via 63A, 63B...Via side 64...First electrode via 70...Second electrode part 71...Second conductive layer 72,72A,72B,72C…Second wiring 72AA, 72AB, 72BA, 72BB...Wiring side 73, 73P, 73Q...Second via 73A, 73B...Via side 74...Second electrode via 80...First electrode part 81...First conductive layer 82, 82A, 82B...First wiring 82AA, 82AB, 82AC, 82AD...Wiring side 82BA, 82BB, 82BC, 82BD... Wiring side 83...First via 83A, 83B, 83C, 83D...Via side 84...First electrode via 90...Second electrode part 91...Second conductive layer 92,92A,92B…Second wiring 92AA, 92AB, 92AC, 92AD…Wiring side 92BA, 92BB, 92BC, 92BD... Wiring side 93...Second via 93A, 93B, 93C, 93D...Via side 94...Second electrode via 100...ADC 110...AD conversion section 111...Comparator 112...Comparative latch section 113...Data latch section 114...First DAC data generation unit 115...Selector 116...Switch control section 120...Abnormality detection unit 121...Second DAC data generation unit 122...Data comparison section 130...Capacitive DAC 131...Inverter 132...Switch PE1…1st electrode PE2…Second electrode C0 to C11: Capacitors SW0~SW11...Switches DA: Distance between the first electrode part and the second electrode part in one direction in the X direction DB: Distance between the first electrode part and the second electrode part in the other X direction DC: Distance between first traces in the Z direction DD: Distance between the first wiring and the second electrode plate in the Z direction DE: Distance between the second traces in the Z direction DF: Distance in the Z direction between the second wiring and the first electrode plate DG: Distance between the first electrode part and the second electrode part in the X direction DG1: Distance between the first electrode part and the second electrode part in one direction in the X direction DG2: Distance between the first electrode part and the second electrode part in the other X direction DH...Distance between the first electrode part and the second electrode part in the Y direction DH1: Distance between the first electrode part and the second electrode part in one direction in the Y direction DH2: Distance between the first electrode part and the second electrode part in the other Y direction DJ: Distance between first traces in the Z direction DK: Distance between the first wiring and the second electrode plate in the Z direction DL: Distance between second wirings in the Z direction DM: Distance between the second wiring and the first electrode plate in the Z direction L1A, L1B, L1C, L1D...Length of the first wiring L2A, L2B: Length of the second wiring LP1: Length of the first electrode plate in the Y direction LP2: Length of the second electrode plate in the Y direction P1: Arrangement pitch of the first electrode part P2: Arrangement pitch of second electrode parts PX1: X-direction arrangement pitch of the first electrode part PY1: Y-direction arrangement pitch of the first electrode part PX2: X-direction arrangement pitch of the second electrode part PY2: Y-direction arrangement pitch of the second electrode parts W1A, W1B, W1C, W1D...Width of the first wiring W2A, W2B, W2C, W2D...Width of second wiring

Claims

1. a substrate including a first substrate surface; an insulating layer provided on the first substrate surface; a first electrode and a second electrode provided in the insulating layer and facing each other; Equipped with the first electrode includes a first electrode plate and a plurality of first electrode parts; the second electrode includes a second electrode plate and a plurality of second electrode parts; the first electrode plate is provided in the insulating layer near the first substrate surface and faces the first substrate surface; the second electrode plate is located in the insulating layer on the opposite side of the first substrate surface with respect to the first electrode plate, and is provided so as to face the first electrode plate, the plurality of first electrode parts are disposed between the first electrode plate and the second electrode plate and are electrically connected to the first electrode plate; the plurality of second electrode parts are disposed between the second electrode plate and the first electrode plate and are electrically connected to the second electrode plate; the plurality of first electrode parts and the plurality of second electrode parts are alternately arranged in a first direction perpendicular to a thickness direction of the substrate and face each other in the first direction, The first electrode plate is interposed between the plurality of second electrode parts and the substrate. Capacitor.

2. the first electrode part is configured by a plurality of first conductive layers stacked from the first electrode plate toward the second electrode plate, The second electrode part is composed of a plurality of second conductive layers stacked from the second electrode plate toward the first electrode plate. The capacitor of claim 1 .

3. The plurality of first conductive layers are a plurality of first wirings arranged in the thickness direction; a first via that electrically connects the first wirings adjacent to each other in the thickness direction; a first electrode via that connects a first wiring among the plurality of first wirings that is closest to the first electrode plate to the first electrode plate; Including, The plurality of second conductive layers are a plurality of second wirings arranged in the thickness direction; a second via that electrically connects the second wirings adjacent to each other in the thickness direction; a second electrode via that connects the second wiring closest to the second electrode plate among the plurality of second wirings to the second electrode plate; Contains The capacitor of claim 2 .

4. each of the plurality of first wirings extends in a second direction perpendicular to the first direction when viewed from the thickness direction; the first wirings adjacent to each other in the thickness direction are electrically connected to each other by a plurality of the first vias, Each of the plurality of second wirings extends in the second direction, The second wirings adjacent to each other in the thickness direction are electrically connected to each other by a plurality of the second vias. The capacitor according to claim 3 .

5. The plurality of first wirings and the plurality of second wirings face each other in the first direction. The capacitor according to claim 3 .

6. A direction perpendicular to the first direction when viewed from the thickness direction is defined as a second direction, The length of each of the plurality of first wirings in the second direction is equal to the length of each of the plurality of second wirings in the second direction. The capacitor according to claim 3 .

7. Each of the first vias faces each of the second vias in the first direction. The capacitor according to claim 3 .

8. The second wiring is disposed at the center in the first direction between two of the first wirings adjacent to each other in the first direction. The capacitor according to claim 3 .

9. The first electrode parts and the second electrode parts are alternately arranged in a second direction perpendicular to the first direction when viewed from the thickness direction and face each other in the second direction. The capacitor of claim 1 .

10. The plurality of first electrode parts and the plurality of second electrode parts are arranged alternately one by one in the first direction and alternately one by one in the second direction. The capacitor of claim 9.

11. The distance between the first electrode part and the second electrode part in the first direction is equal to the distance between the first electrode part and the second electrode part in the second direction. The capacitor of claim 10.

12. the first electrode part is configured by a plurality of first conductive layers stacked from the first electrode plate toward the second electrode plate, The second electrode part is composed of a plurality of second conductive layers stacked from the second electrode plate toward the first electrode plate. The capacitor of claim 9.

13. The plurality of first conductive layers are a plurality of first wirings arranged in the thickness direction; a first via that electrically connects the first wirings adjacent to each other in the thickness direction; a first electrode via that connects a first wiring among the plurality of first wirings that is closest to the first electrode plate to the first electrode plate; Including, The plurality of second conductive layers are a plurality of second wirings arranged in the thickness direction; a second via that electrically connects the second wirings adjacent to each other in the thickness direction; a second electrode via that connects the second wiring closest to the second electrode plate among the plurality of second wirings to the second electrode plate; Including, The plurality of first wirings and the plurality of second wirings face each other in both the first direction and the second direction. The capacitor of claim 12.

14. The plurality of first vias and the plurality of second vias face each other in both the first direction and the second direction. The capacitor of claim 13.

15. The second electrode plate is located on the opposite side of the first substrate surface from the plurality of first electrode parts in the thickness direction and faces each of the plurality of first electrode parts. The capacitor of claim 1 .

16. The second electrode plate and the plurality of second electrode parts are arranged within a range overlapping with the first electrode plate when viewed from the thickness direction. The capacitor of claim 1 .

17. The insulating layer is made of an oxide film. The capacitor of claim 1 .

18. The insulating layer is made of SiO ２ It is made of materials containing 18. The capacitor of claim 17.

19. the substrate is a semiconductor substrate; The first electrode plate is electrically connected to the substrate. The capacitor of claim 1 .

20. The first electrode plate includes slits provided at positions different from the positions of the second electrode parts when viewed from the thickness direction. The capacitor according to any one of claims 1 to 19.

Images