Semiconductor laser device and light emitting device

Abstract

To achieve both reduction of light density of laser light and reduction of an aspect ratio of a spot shape of the laser light at a position close to a semiconductor laser element.SOLUTION: The semiconductor laser device 1 includes a semiconductor laser element 10 that emits laser light and a reflective surface 31 that reflects the laser light, the laser light has a slow axis and a fast axis, the reflective surface 31 has a convex surface that protrudes toward the semiconductor laser element 10, and the convex surface has a linear generatrix 31M located at a top portion of the convex surface. The shape of the convex surface in a cross section perpendicular to the generatrix 31M at any position on the generatrix 31M is the same convex shape, a plane including the first optical axes Ax1 of the laser beams propagating from the laser diode elements 10 to the reflecting surfaces 31 and the fast axes of the laser beams propagating from the laser diode elements 10 to the reflecting surfaces 31 is parallel to the generatrix 31M, and the generatrix 31M is inclined with respect to the first optical axes Ax1.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor laser device and a light emitting device. [Background technology]

[0002] BACKGROUND ART Conventionally, there is known a technique for controlling the spot shape of laser light by reflecting the laser light from a semiconductor laser element in the fast axis direction with a mirror having a focusing function (see, for example, Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-36638 [Patent Document 2] Japanese Patent Application Laid-Open No. 7372308 Summary of the Invention [Problem to be solved by the invention]

[0004] The techniques described in Patent Documents 1 and 2 cannot simultaneously reduce the light density of the laser light at a position close to the semiconductor laser element and reduce the aspect ratio of the spot shape of the laser light.

[0005] The present disclosure is intended to solve such problems, and aims to provide a semiconductor laser device or the like that can achieve both a reduction in the optical density of laser light and a reduction in the aspect ratio of the spot shape of laser light at a position close to a semiconductor laser element. [Means for solving the problem]

[0006] In order to solve the above problems, one aspect of a semiconductor laser device according to the present disclosure includes a semiconductor laser element that emits laser light and a reflecting surface that reflects the laser light, the laser light having a slow axis and a fast axis, the reflecting surface having a convex surface that protrudes toward the semiconductor laser element, the convex surface having a linear generatrix located at an apex of the convex surface, a cross section of the convex surface perpendicular to the generatrix at any position on the generatrix has the same convex shape, a plane that includes a first optical axis that is an optical axis of the laser light propagating from the semiconductor laser element to the reflecting surface and the fast axis of the laser light propagating from the semiconductor laser element to the reflecting surface is parallel to the generatrix, and the generatrix is ​​inclined with respect to the first optical axis.

[0007] In order to solve the above problems, another aspect of the semiconductor laser device according to the present disclosure includes a semiconductor laser element that emits laser light and a reflecting surface that reflects the laser light, wherein the laser light has a slow axis and a fast axis, the reflecting surface has a convex surface that protrudes toward the semiconductor laser element, a cross section of the convex surface that is parallel to a plane that includes a first optical axis that is an optical axis of the laser light propagating from the semiconductor laser element to the reflecting surface and the slow axis of the laser light propagating from the semiconductor laser element to the reflecting surface has a convex shape that protrudes toward the semiconductor laser element, and a cross section of the convex surface that is parallel to a plane that includes the first optical axis and the fast axis of the laser light propagating from the semiconductor laser element to the reflecting surface is a straight line that is inclined with respect to the first optical axis.

[0008] In order to solve the above-described problems, yet another aspect of the semiconductor laser device according to the present disclosure includes a plurality of emission points each emitting laser beam and a plurality of reflecting surfaces each reflecting the laser beam, the laser beam having a slow axis and a fast axis, each of the plurality of reflecting surfaces having a convex surface protruding toward a corresponding one of the plurality of emission points, the convex surface having a linear generatrix located at an apex of the convex surface, the cross section of the convex surface perpendicular to the generatrix at any position on the generatrix having the same convex shape, a plane including a first optical axis which is an optical axis of the laser beam propagating from each of the plurality of emission points to a corresponding one of the plurality of reflecting surfaces, and the fast axis of the laser beam propagating along the first optical axis is parallel to the generatrix, and the generatrix is ​​inclined with respect to the first optical axis.

[0009] In order to solve the above problem, one aspect of the light emitting device according to the present disclosure comprises the above semiconductor laser device and a wavelength conversion element that is irradiated with the laser light reflected by the reflective surface and converts the wavelength of at least a portion of the laser light. [Effects of the Invention]

[0010] According to the present disclosure, it is possible to provide a semiconductor laser device or the like that can achieve both a reduction in the optical density of laser light and a reduction in the aspect ratio of the spot shape of laser light at a position close to the semiconductor laser element. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a perspective view showing the overall configuration of a semiconductor laser device according to a first embodiment. [Figure 2] 1 is a first cross-sectional view showing the overall configuration of a light emitting device according to a first embodiment. [Figure 3] 4 is a second cross-sectional view showing the overall configuration of the light emitting device according to the first embodiment. FIG. [Figure 4] 4 is a diagram showing how the beam diameter changes as the laser light propagates in the semiconductor laser device according to the first embodiment. FIG. [Figure 5]4 is a graph showing the relationship between the angle in the fast axis direction with respect to the optical axis and the light intensity of the laser light according to the first embodiment. [Figure 6] FIG. 2 is a first diagram showing the positional relationship between laser light, a semiconductor laser element, and a reflecting surface. [Figure 7] FIG. 10 is a second diagram showing the positional relationship between the laser light, the semiconductor laser element, and the reflecting surface. [Figure 8] FIG. 10 is a third diagram showing the positional relationship between the laser light, the semiconductor laser element, and the reflecting surface. [Figure 9] FIG. 2 is a first diagram showing the positional relationship between a laser beam, a semiconductor laser element, a reflecting surface, and an irradiation surface. [Figure 10] FIG. 2 is a second diagram showing the positional relationship between the laser light, the semiconductor laser element, the reflecting surface, and the irradiation surface. [Figure 11] FIG. 2 is a schematic diagram illustrating the optical path of laser light reflected by a reflecting surface. [Figure 12] 1 is a graph showing the relationship between the spot size and the distance in the optical axis direction from the emission point of a semiconductor laser element. [Figure 13] FIG. 10 is a diagram showing a light density distribution on an irradiation surface of a semiconductor laser device of a comparative example. [Figure 14] 3 is a diagram showing a light density distribution on an irradiation surface of the semiconductor laser device according to the first embodiment. FIG. [Figure 15] FIG. 3 is a diagram showing parameters of the exemplary configuration of the semiconductor laser device according to the first embodiment. [Figure 16] 1 is a perspective view showing a package structure of a light emitting device according to Embodiment 1. FIG. [Figure 17] FIG. 2 is a plan view showing a package structure of the light emitting device according to the first embodiment. [Figure 18] FIG. 2 is an exploded perspective view showing the package structure of the light emitting device according to the first embodiment. [Figure 19] 1 is a first cross-sectional view showing a package structure of a light emitting device according to Embodiment 1. FIG. [Figure 20] 4 is a second cross-sectional view showing the package structure of the light emitting device according to the first embodiment. FIG. [Figure 21]1 is a first cross-sectional view showing a first configuration example of a first reflecting element according to the first embodiment. [Figure 22] 4 is a second cross-sectional view showing the first configuration example of the first reflecting element in accordance with the first embodiment. FIG. [Figure 23] 4 is a first cross-sectional view showing a second configuration example of the first reflecting element according to the first embodiment. FIG. [Figure 24] 10 is a second cross-sectional view showing the second configuration example of the first reflecting element in accordance with the first embodiment. FIG. [Figure 25] 10 is a cross-sectional view showing a third configuration example of the first reflecting element in accordance with the first embodiment. FIG. [Figure 26] 10 is a first cross-sectional view showing a fourth configuration example of the first reflecting element according to the first embodiment. FIG. [Figure 27] 10 is a second cross-sectional view showing Configuration Example 4 of the first reflecting element in accordance with Embodiment 1. FIG. [Figure 28] 10 is a first cross-sectional view showing a fifth configuration example of the first reflecting element according to the first embodiment. FIG. [Figure 29] 10 is a second cross-sectional view showing Configuration Example 5 of the first reflecting element in accordance with Embodiment 1. FIG. [Figure 30] 10A to 10C are cross-sectional views illustrating a preparation step in a manufacturing method for Structural Example 5 of the first reflecting element according to the first embodiment. [Figure 31] 10A to 10C are cross-sectional views illustrating processing steps in a manufacturing method for Structural Example 5 of the first reflecting element according to the first embodiment. [Figure 32] 10 is a cross-sectional view illustrating a reflective film forming step in a manufacturing method for Structural Example 5 of the first reflective element according to the first embodiment. [Figure 33] 10 is a cross-sectional view showing a cutting step in a manufacturing method for Structural Example 5 of the first reflecting element according to the first embodiment. [Figure 34] 1 is a first cross-sectional view showing the overall configuration of a light emitting device according to a second embodiment. [Figure 35] 10 is a second cross-sectional view showing the overall configuration of the light emitting device according to the second embodiment. FIG. [Figure 36] FIG. 10 is a perspective view showing the configuration of a second reflecting element according to the second embodiment. [Figure 37]10 is a diagram showing an irradiation surface onto which laser light is irradiated in a semiconductor laser device according to a second embodiment. FIG. [Figure 38] 38 is a schematic graph showing the light intensity distribution at the central axis position shown in FIG. 37. [Figure 39] FIG. 10 is a diagram showing a light density distribution on an irradiation surface of the semiconductor laser device according to the second embodiment. [Figure 40] FIG. 10 is a first cross-sectional view showing the package structure of the light emitting device according to the second embodiment. [Figure 41] 10 is a second cross-sectional view showing the package structure of the light emitting device according to the second embodiment. FIG. [Figure 42] FIG. 10 is a plan view illustrating a first configuration example of a second reflecting element according to the second embodiment. [Figure 43] 10 is a plan view illustrating a second configuration example of a second reflecting element according to the second embodiment. FIG. [Figure 44] 10 is a plan view illustrating a third configuration example of a second reflecting element according to the second embodiment. FIG. [Figure 45] FIG. 10 is a perspective view illustrating a fourth configuration example of the second reflecting element according to the second embodiment. [Figure 46] 10A and 10B are diagrams illustrating how laser light is refracted and reflected in a fourth configuration example of the second reflecting element according to the second embodiment. [Figure 47] 10 is a graph showing the relationship between the divergence angle θx and the minimum refractive index n required for the second reflecting element. [Figure 48] FIG. 10 is a schematic perspective view showing a preparatory step in the method for manufacturing the second reflecting element according to the second embodiment. [Figure 49] FIG. 10 is a schematic perspective view showing an opening forming step in the method for manufacturing the second reflecting element in accordance with the second embodiment. [Figure 50] 10A to 10C are schematic cross-sectional views illustrating an opening formation step in the method for manufacturing the second reflecting element according to the second embodiment. [Figure 51] FIG. 10 is a schematic perspective view showing a reflective film forming step in the method for manufacturing the second reflective element according to the second embodiment. [Figure 52] 10 is a schematic cross-sectional view showing a reflective film forming step in the method for manufacturing the second reflective element according to the second embodiment. FIG. [Figure 53] FIG. 10 is a schematic perspective view showing a singulation step in a method for manufacturing a second reflecting element according to the second embodiment. [Figure 54] FIG. 10 is a plan view illustrating a first modified example of the second reflecting element according to the second embodiment. [Figure 55] FIG. 10 is a plan view illustrating a second modification of the second reflecting element according to the second embodiment. [Figure 56] FIG. 10 is a diagram showing an example of a light density distribution on an irradiation surface when a first modification of a second reflecting element is used in a semiconductor laser device according to a second embodiment. [Figure 57] FIG. 10 is a plan view showing the overall configuration of a light emitting device according to a third embodiment. [Figure 58] FIG. 11 is a perspective view showing a part of a light emitting device according to a third embodiment. [Figure 59] FIG. 10 is a plan view showing the arrangement of a set of semiconductor laser elements, a submount, and a first reflecting element in a semiconductor laser device according to a third embodiment. [Figure 60] FIG. 10 is a first cross-sectional view showing the configuration of a light emitting device according to a third embodiment. [Figure 61] 10 is a second cross-sectional view showing the configuration of the light emitting device according to the third embodiment. FIG. [Figure 62] 10 is a first cross-sectional view showing the configuration of Modification 1 of the light emitting device according to Embodiment 3. FIG. [Figure 63] 10 is a second cross-sectional view showing the configuration of Modification 1 of the light emitting device according to Embodiment 3. FIG. [Figure 64] FIG. 10 is a cross-sectional view showing the overall configuration of a light emitting device according to a fourth embodiment. [Figure 65] FIG. 10 is a cross-sectional view showing the configuration of a first reflecting element according to the fourth embodiment. [Figure 66] FIG. 10 is a plan view showing the configurations of a semiconductor laser element and a first reflecting element according to a fourth embodiment. [Figure 67] FIG. 10 is a cross-sectional view of a first reflecting element and an irradiation surface according to the fourth embodiment. [Figure 68] FIG. 13 is a plan view showing a configuration of a semiconductor laser element and a first reflecting element according to a modification of the fourth embodiment. [Figure 69] 13 is a cross-sectional view of a first reflecting element and an irradiation surface according to a modification of the fourth embodiment. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that each of the embodiments described below represents a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, components, and the arrangement and connection of the components shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0013] Furthermore, each figure is a schematic diagram and is not necessarily an exact representation. Therefore, the scales and the like do not necessarily match in each figure. In each figure, the same reference numerals are used to denote substantially the same components, and redundant explanations will be omitted or simplified.

[0014] In this specification, the terms "above" and "below" do not refer to vertically above and below in absolute spatial recognition, but are used as terms defined by a relative positional relationship based on the stacking order in a stacked configuration. The terms "above" and "below" are used not only when two components are arranged with a gap between them and another component is present between them, but also when two components are arranged in contact with each other.

[0015] Furthermore, in this specification, terms indicating relationships between elements such as "equal," terms indicating the shapes of elements such as "parallel," "perpendicular," "cylindrical," and "arc," as well as numerical ranges, are not expressions that only express a strict meaning, but are expressions that mean a substantially equivalent range, for example, including a difference of about a few percent.

[0016] (Embodiment 1) A semiconductor laser device and a light emitting device according to a first embodiment will be described.

[0017] [1-1. Overall structure] First, the overall configuration of a semiconductor laser device and a light emitting device according to this embodiment will be described with reference to FIGS. 1 to 3. FIG. 1 is a perspective view showing the overall configuration of a semiconductor laser device 1 according to this embodiment. FIGS. 2 and 3 are cross-sectional views showing the overall configuration of a light emitting device 2 according to this embodiment. FIG. 2 shows a cross section taken along line II-II in FIGS. 1 and 3. FIG. 3 shows a cross section taken along line III-III in FIGS. 1 and 2. Each figure shows an X-axis, a Y-axis, and a Z-axis which are orthogonal to each other. The X-axis, the Y-axis, and the Z-axis are in a right-handed Cartesian coordinate system.

[0018] The semiconductor laser device 1 is a device that irradiates a predetermined plane with laser light. In this embodiment, the semiconductor laser device 1 has an irradiation surface 50S as an example of the predetermined plane. The irradiation surface 50S may be an imaginary plane with no physical substance, or may be the surface of some object. As shown in FIGS. 1 to 3, the semiconductor laser device 1 has a semiconductor laser element 10 and a reflecting surface 31. In this embodiment, the semiconductor laser device 1 has a first reflecting element 30 having the reflecting surface 31. Furthermore, the semiconductor laser device 1 has a submount 20. The irradiation surface 50S is a surface onto which the laser light reflected by the reflecting surface 31 is irradiated.

[0019] 2 and 3, the light emitting device 2 according to this embodiment is a device that emits light, and includes a semiconductor laser device 1 and a wavelength conversion element 50. The light emitting device 2 emits, for example, white light.

[0020] The semiconductor laser element 10 is an element that emits laser light. The semiconductor laser element 10 emits, for example, blue laser light. In this embodiment, as shown in FIG. 2, the semiconductor laser element 10 has an emission point 10e. The emission point 10e is the intersection of the end face of the semiconductor laser element 10 that emits the laser light (the end face on the Y-axis direction positive side in FIG. 2) and the optical axis of the laser light (a first optical axis Ax1 described later). The semiconductor laser element 10 emits the laser light from a region including the emission point 10e. The semiconductor laser element 10 has an active layer that generates light. The semiconductor laser element 10 has an optical waveguide 10W that guides the laser light (see FIG. 2). The optical waveguide 10W includes at least a part of the active layer and extends in the Y-axis direction in FIG. 2. The laser light is emitted from the end of the optical waveguide 10W on the Y-axis direction positive side. The intersection of the end face of the optical waveguide 10W on the positive side in the Y-axis direction and the optical axis (first optical axis Ax1) of the laser light is the emission point 10e. The semiconductor laser element 10 emits laser light from the end face of the optical waveguide 10W. For reference, in FIG. 3, the outlines of the semiconductor laser element 10 and the optical waveguide 10W in the ZX plane are also shown by dashed lines. The width of the optical waveguide 10W in the X-axis direction is, for example, not less than 1 μm and not more than 100 μm. The emission point 10e is located, for example, at the center of the end face of the optical waveguide 10W on the positive side in the Y-axis direction.

[0021] As shown in FIG. 2, the semiconductor laser element 10 is disposed on a flat mounting surface S0. In this embodiment, the semiconductor laser element 10 is disposed on the mounting surface S0 via a submount 20. The semiconductor laser element 10 is mounted on the upper surface of the submount 20 (i.e., the end surface on the positive side in the Z-axis direction of the submount 20). Specifically, the semiconductor laser element 10 is mounted on wiring electrodes (not shown) on the submount 20. In this embodiment, the semiconductor laser element 10 is mounted on the submount 20 by junction-down mounting. However, the mounting form of the semiconductor laser element 10 is not limited thereto, and the semiconductor laser element 10 may also be mounted on the submount 20 by junction-up mounting.

[0022] 2, the semiconductor laser element 10 is disposed so that the longitudinal direction of the optical waveguide 10W is parallel to the mounting surface S0. The laser light emitted by the semiconductor laser element 10 propagates parallel to the mounting surface S0 and is incident on the reflecting surface 31. The optical axis direction of the laser light emitted by the semiconductor laser element 10 is parallel to the Y axis shown in each drawing. Furthermore, the normal to the mounting surface S0 is parallel to the Z axis.

[0023] The laser light emitted by the semiconductor laser element 10 has a slow axis and a fast axis. The slow axis, fast axis, and optical axis of the laser light are perpendicular to one another. In this embodiment, the slow axis of the laser light propagating from the semiconductor laser element 10 to the reflecting surface 31 is parallel to the placement surface S0. In other words, the slow axis is parallel to the X axis in each drawing. The fast axis of the laser light propagating from the semiconductor laser element 10 to the reflecting surface 31 is parallel to the placement surface S0. In other words, the fast axis is parallel to the Z axis in each drawing.

[0024] The semiconductor laser device 10 may be, for example, a multi-mode laser device, which emits laser light including a plurality of transverse modes (that is, modes in the slow-axis direction).

[0025] The submount 20 is a base on which the semiconductor laser element 10 is mounted. It also functions as a heat sink for dissipating heat generated by the semiconductor laser element 10. Therefore, the submount 20 may be made of either a conductive or insulating material, but is preferably made of a material with high thermal conductivity. The thermal conductivity of the submount 20 is preferably 150 W / (m·K) or higher. For example, the submount 20 may be made of ceramics such as aluminum nitride (AlN) or polycrystalline silicon carbide (SiC), metal materials such as Cu, or diamond such as single crystal diamond or polycrystalline diamond. The shape of the submount 20 is, for example, a rectangular parallelepiped plate, but is not limited thereto. The submount 20 is bonded to the mounting surface S0 using a metallic bonding material, for example.

[0026] The first reflecting element 30 is an element having a reflecting surface 31. In this embodiment, the first reflecting element 30 is disposed on the disposition surface S0.

[0027] The reflecting surface 31 reflects the laser light emitted by the semiconductor laser device 10. The reflecting surface 31 has a convex surface that protrudes toward the semiconductor laser device 10. In the example shown in FIGS. 1 to 3, the entire reflecting surface 31 is convex. The convex surface has a linear generatrix 31M located at the top of the convex surface. The cross section of the convex surface perpendicular to the generatrix 31M at any position on the generatrix 31M has the same convex shape.

[0028] There may be a flat surface (i.e., a flat portion parallel to the X-axis direction) at the apex of the convex surface of reflecting surface 31. In this case, for example, the generatrix located in the center of the X-axis direction among the flat portion at the apex of the concave surface is defined as generatrix 31M according to this embodiment.

[0029] In other words, a cross section of the convex surface parallel to a plane including a first optical axis Ax1, which is the optical axis of the laser light propagating from the semiconductor laser element 10 (in other words, the optical waveguide 10W or the emission point 10e) to the reflecting surface 31, and a slow axis of the laser light propagating from the semiconductor laser element 10 (in other words, the optical waveguide 10W or the emission point 10e) to the reflecting surface 31, has a convex shape that protrudes toward the semiconductor laser element 10 (in other words, the optical waveguide 10W or the emission point 10e). A cross section of the convex surface parallel to a plane including the first optical axis Ax1 and the fast axis of the laser light propagating from the semiconductor laser element 10 (in other words, the optical waveguide 10W or the emission point 10e) to the reflecting surface 31 is a straight line inclined with respect to the first optical axis Ax1.

[0030] As described above, the convex surface has a cylindrical shape. In this embodiment, the convex surface has a shape symmetrical with respect to the generating line 31M. More specifically, the convex surface includes a cylindrical surface. The convex shape of the convex surface perpendicular to the generating line 31M is an arc. When the generating line 31M is included in the cylindrical surface, the generating line 31M is one of the generating lines of the cylindrical surface.

[0031] A plane including a first optical axis Ax1, which is the optical axis of the laser light propagating from the semiconductor laser element 10 to the reflecting surface 31, and a fast axis of the laser light propagating from the semiconductor laser element 10 to the reflecting surface 31, is parallel to the generating line 31M. In this embodiment, the generating line 31M is included in this plane. In other words, the first optical axis Ax1 intersects with the generating line 31M. The generating line 31M is inclined with respect to the first optical axis Ax1. In this embodiment, the generating line 31M is inclined at 45° with respect to the first optical axis Ax1.

[0032] The wavelength conversion element 50 is an element that is irradiated with laser light reflected by the reflecting surface 31 and converts the wavelength of at least a portion of the laser light. The wavelength conversion element 50 is irradiated with, for example, blue laser light and emits yellow fluorescence. The wavelength conversion element 50 emits, for example, white light containing yellow fluorescence and scattered light of the blue laser light. In this embodiment, the wavelength conversion element 50 has a rectangular plate shape. At least a portion of the laser light incident surface of the wavelength conversion element 50 is included in the irradiation surface 50S. As shown in FIGS. 2 and 3, the wavelength conversion element 50 is supported by, for example, a support member 52. The support member 52 supports, for example, the periphery of the wavelength conversion element 50.

[0033] [1-2.Effects] The effects of the semiconductor laser device 1 and the light emitting device 2 according to this embodiment will be described with reference to the above-mentioned FIGS. 1 to 3 and 4. FIG. 4 is a diagram showing how the beam diameter changes as the laser light propagates in the semiconductor laser device 1 according to this embodiment. On the left side of FIG. 4, the position of the fast-axis end Lef of the beam spot of the laser light from the output point 10e to the irradiation surface 50S is indicated by a dashed line. On the right side of FIG. 4, the position of the slow-axis end Les of the beam spot of the laser light from the output point 10e to the irradiation surface 50S is indicated by a dashed line.

[0034] In the semiconductor laser device 1 according to the present embodiment, the laser light emitted from the emission point 10e of the semiconductor laser element 10 propagates along the first optical axis Ax1 over a distance d [mm] to the reflecting surface 31, as shown in Fig. 2 and Fig. 4, and then propagates from the reflecting surface 31 to the irradiation surface 50S over a height h [mm] along the second optical axis Ax2 as shown in Fig. 2 to Fig. 4. Here, the distance d is the distance from the emission point 10e of the semiconductor laser element 10 to the reflecting surface 31 on the first optical axis Ax1. The height h is the height from the reflecting surface 31 to the irradiation surface 50S on the second optical axis Ax2.

[0035] 1, the dimension WBF1 in the fast axis direction and the dimension WBS1 in the slow axis direction of the beam spot Bs1 of the laser light propagating along the first optical axis Ax1 increase as the beam spot approaches the reflecting surface 31. As shown in FIG. 4, the divergence angle θ f [degree] is the divergence angle θ in the slow axis direction s Therefore, the aspect ratio (WBF1 / WBS1) of the beam spot Bs1 of the laser light increases as the propagation distance of the laser light increases.

[0036] However, in the semiconductor laser device 1 according to the present embodiment, by providing the reflecting surface 31 having the convex surface configured as described above, as shown in FIG. 4, the divergence angle in the fast axis direction of the laser light reflected by the reflecting surface 31 is maintained, while the divergence angle in the slow axis direction is reduced to θ s From this, θ f Larger θ s2 As a result, while the laser light propagates from the reflecting surface 31 to the irradiation surface 50S along the second optical axis Ax2, the dimension of the beam spot in the slow axis direction can be made to approach the dimension in the fast axis direction. Therefore, the aspect ratio of the beam shape of the laser light on the irradiation surface 50S, that is, the dimension 2a s Dimension 2a in the fast axis direction [mm] f [mm] ratio (2af / 2a s ) can be reduced. f and a s represent the spot sizes in the fast axis direction and the slow axis direction on the irradiation surface 50S, respectively.

[0037] In addition, in this embodiment, the divergence angle in the slow axis direction can be increased by the reflecting surface 31, so the optical density of the laser light can be reduced on the irradiation surface 50S located close to the semiconductor laser element 10. In particular, in this embodiment, the semiconductor laser element 10 is a multimode laser element, so the power of the laser light is large, and the divergence angle θ in the slow axis direction s is relatively small. Therefore, the light density of the laser light in the slow-axis direction tends to be high. In this embodiment, the divergence angle in the slow-axis direction can be increased by the reflecting surface 31, so that it is possible to reduce the light density at a position close to the semiconductor laser element 10 even when the semiconductor laser element 10 is a multimode laser element.

[0038] Furthermore, in the light emitting device 2 according to this embodiment, laser light with a small aspect ratio can be irradiated onto the wavelength conversion element 50, and thus light having a spot shape with a small aspect ratio can be emitted. Furthermore, the optical density of the laser light irradiated onto the wavelength conversion element 50 can be reduced, and therefore deterioration of the wavelength conversion element 50 due to the laser light can be suppressed. Furthermore, in the light emitting device 2 according to this embodiment, the distance from the semiconductor laser element 10 to the irradiation surface 50S, i.e., the distance from the semiconductor laser element 10 to the wavelength conversion element 50, can be reduced, and therefore the light emitting device 2 can be made smaller.

[0039] [1-3. Arrangement of semiconductor laser element and reflecting surface] The arrangement of the semiconductor laser element 10 and the reflecting surface 31 according to this embodiment will be described with reference to FIGS. 5 to 10. FIG. 5 is a graph showing the relationship between the angle of the laser beam relative to the optical axis in the fast axis direction and the intensity of the laser beam according to this embodiment. FIGS. 6 to 8 are diagrams showing the positional relationship between the laser beam, the semiconductor laser element 10, and the reflecting surface 31. FIG. 6 shows the positional relationship when the distance d between the semiconductor laser element 10 and the reflecting surface 31 is less than 0.09 mm. FIG. 7 shows the positional relationship when the distance d is 0.09 mm or more and less than 0.32 mm. FIG. 8 shows the positional relationship when the distance d is 0.32 mm or more. FIGS. 9 and 10 are diagrams showing the positional relationship between the laser beam, the semiconductor laser element 10, the reflecting surface 31, and the irradiation surface 50S. FIG. 9 shows the positional relationship when the distance d between the semiconductor laser element 10 and the reflecting surface 31 is 1.1 mm or less, and FIG. 10 shows the positional relationship when the distance d is greater than 1.1 mm.

[0040] Here, as shown in Fig. 5, it is assumed that the light intensity distribution with respect to angle can be approximated by a Gaussian distribution with a standard deviation of 12.5°. In this case, the light intensity at an angle of 25° is 13.5% of the light intensity at an angle of 0°, and the light intensity at an angle of 37.5° is 1.11% of the light intensity at an angle of 0°. The distance T from the emission point 10e of the semiconductor laser element 10 to the upper end LD Assume that the distance is 0.1 mm.

[0041] Under the above conditions, if the distance d is less than 0.09 mm, the portion of the laser light reflected by the reflecting surface 31 that is at an angle of 25° or more with respect to the optical axis interferes with the semiconductor laser element 10, as shown in FIG. 6. As a result, at least a portion of the laser light that is at an angle of 25° or more with respect to the optical axis is lost. On the other hand, if the distance d is 0.09 mm or more, the portion of the laser light reflected by the reflecting surface 31 that is at an angle of 25° or less can be reduced from interfering with the semiconductor laser element 10, as shown in FIG. 7. Therefore, the distance d may be 0.09 mm or more. This reduces the loss of laser light caused by interference between the semiconductor laser element 10 and the laser light.

[0042] Furthermore, when the distance d is 0.32 mm or more, it is possible to reduce interference between the semiconductor laser element 10 and the portion of the laser light reflected by the reflecting surface 31 at an angle of 37.5° or less, as shown in Fig. 8. Therefore, the distance d may be 0.32 mm or more. This makes it possible to further reduce loss of laser light caused by interference between the semiconductor laser element 10 and the laser light.

[0043] In addition, the spot size a in the fast axis direction on the irradiation surface 50S is f , the spot size in the slow axis direction a s Each of the distances may be 0.25 mm or more. This reduces the light intensity on the irradiation surface 50S. Therefore, it is possible to suppress deterioration of the wavelength conversion element 50 of the light emitting device 2 and also suppress a rise in temperature of the wavelength conversion element 50. Furthermore, in order to prevent the light intensity on the irradiation surface 50S from becoming too low, the spot size a in the fast axis direction on the irradiation surface 50S is set to 0.25 mm or more. f , the spot size in the slow axis direction a s Each of these may be 1.0 mm or less.

[0044] In this way, the spot size a f , and spot size a s In order to make the spot size a 1.0 mm or less, the sum of the distance d from the semiconductor laser element 10 to the reflecting surface 31 and the height h from the reflecting surface 31 to the irradiation surface 50S must be made smaller than a predetermined value. For example, when the distance d is increased, the height h must be decreased. Therefore, as shown in FIG. 9, the distance d may be 1.1 mm or less. This reduces the spot size a f , and spot size a s 10, it is possible to prevent the laser light from being irradiated onto the irradiation surface 50S before it reaches the reflecting surface 31. If the laser light is irradiated onto the irradiation surface 50S before it reaches the reflecting surface 31, the uniformity of the light intensity on the irradiation surface 50S decreases. Furthermore, when the distance d is 1.1 mm or less, the spot size a can be reduced by setting the height h to 1.1 mm or more and 2 mm or less.f , and spot size a s can be set to 0.25 mm or more and 1.0 mm or less.

[0045] [1-4. Configuration example and simulation results] An example of the configuration of the semiconductor laser device 1 according to this embodiment and the results of simulation thereof will be described.

[0046] First, a method for determining the radius of curvature R of the cylindrical reflecting surface 31 according to this embodiment will be described. s , distance d, height h, and spot size a in the slow axis direction on the irradiation surface 50S. s The exact relationship between is complicated, so cosθ s The divergence angle θ can be approximated as ≒ 1. s is small enough and sin 2 θ s =tan 2 θ s The divergence angle θ can be approximated to 0. s Assuming that is sufficiently small, we obtain the approximate formula expressed by the following formula (2).

[0047]

number

[0048] Furthermore, here, the spot size a f and spot size a s Assuming that and are equal, the following equation (2) holds:

[0049]

number

[0050] Using the relationship of equation (2), equation (1) can be transformed into the following equations (3) and (4).

[0051]

number

[0052]

number

[0053] For example, when calculating the radius of curvature R based on the height h, use equation (3) and calculate the spot size a s When the radius of curvature R is calculated based on the above, the formula (4) can be used.

[0054] In the above formulas, approximations are used, so the spot size a s However, in reality, this value differs from the value used in the above formula. This error will be explained using FIG. 11. FIG. 11 is a schematic diagram illustrating the optical path of the laser light reflected by the reflecting surface 31. FIG. 11 shows the optical path of the laser light in the slow axis direction. FIG. 11 shows the optical path of the laser light reflected from the emission point 10e at a divergence angle θ s The actual optical path of the laser light diffusing at the laser beam spot is shown by a solid line, and the optical path calculated by the approximate formula is shown by a dashed line.

[0055] As shown in Fig. 11, the divergence angle of the laser light after being reflected by the reflecting surface 31, which is calculated by the approximation formula, is smaller than the actual divergence angle. Therefore, when using the reflecting surface 31 having the radius of curvature R calculated by each of the approximation formulas above, the spot size a s is the spot size a used in the calculation s Therefore, let k be a value greater than 1, and the maximum allowable aspect ratio be a f :a s When expressed as =1:1 / k, the relationship between the radius of curvature R and the divergence angle etc. may be expressed by the following formulas (5) to (7).

[0056]

number

[0057]

number

[0058]

number

[0059] For example, the divergence angle θ f is 22°, divergence angle θ s is 8.5°, distance d is 0.5 mm, spot size a at irradiation surface 50S s When the radius of curvature R is 1 mm, the maximum value R of the radius of curvature R is obtained by using Equation (7). max is 0.65mm, the minimum value of the radius of curvature R is R min is calculated to be 0.46 mm. Here, the maximum value of the radius of curvature R is R max and minimum value R min The spot size in the slow axis direction calculated using the above approximation formula in this case will be described with reference to Fig. 12. Fig. 12 is a graph showing the relationship between the spot size and the distance in the optical axis direction from the emission point 10e of the semiconductor laser device 10. Fig. 12 shows the maximum value R of the range in which the radius of curvature R is expressed by formula (7). max (=0.65mm) and minimum R min 12 shows the spot size in the slow axis direction when the radius of curvature R is (=0.46 mm) and the spot size in the slow axis direction when the radius of curvature R is determined so that the spot sizes in the slow axis direction and the fast axis direction on irradiation surface 50S are 1 mm without error. Also shown in FIG. 12 is the spot size in the fast axis direction. In the example shown in FIG. 12, the distance d is 0.5 mm and the height h is 2 mm, so the position at the optical axis direction distance of 2.5 mm, which is the horizontal axis of FIG. 12, corresponds to irradiation surface 50S.

[0060] The maximum value of the radius of curvature R calculated by Equation (7) is R max When using this, the spot size in the slow axis direction on the irradiation surface 50S is 0.86 mm, so the aspect ratio is 1.15, and the minimum value R minWhen using the reflecting surface 31 having the radius of curvature R within the range obtained by the formula (7), the spot size in the slow axis direction on the irradiation surface 50S is 1.09 mm, and therefore the aspect ratio of the beam shape is 0.91. In this way, by calculating the radius of curvature R using the formula (7), it is possible to achieve an aspect ratio within the allowable range. In other words, by using the reflecting surface 31 having the radius of curvature R within the range obtained by the formula (7), the spot size a in the slow axis direction can be reduced to 0.91. s Spot size a in the fast axis direction of f It is possible to realize a semiconductor laser device 1 having an aspect ratio, defined as the ratio of k to k, that is greater than or equal to 1 / k and less than or equal to k. For example, when k=1.2, the aspect ratio is greater than or equal to 1 / 1.2 and less than or equal to 1.2. A semiconductor laser device 1 having such an aspect ratio can be used as a light source for exciting a wavelength conversion element of a high-brightness white point light source. Note that the radius of curvature R that can achieve an aspect ratio within the allowable range can also be calculated using equations (5) and (6).

[0061] Next, the results of calculating the optical path of laser light in the semiconductor laser device 1 according to this embodiment using optical simulation will be described, while comparing it with the calculation results for a semiconductor laser device of a comparative example. Fig. 13 is a diagram showing the light density distribution on the irradiation surface of the semiconductor laser device of the comparative example. Fig. 14 is a diagram showing the light density distribution on the irradiation surface 50S of the semiconductor laser device 1 according to this embodiment. In Figs. 13 and 14, the light density increases as the color approaches black.

[0062] The semiconductor laser device of the comparative example is a semiconductor laser device in which a plane mirror is used instead of the reflecting surface 31 in the semiconductor laser device 1 according to the present embodiment. The plane mirror of the comparative example is a mirror that is parallel to the generatrix 31M of the reflecting surface 31 according to the present embodiment and the slow axis of the laser light.

[0063] On the other hand, the reflecting surface 31 according to this embodiment is a cylindrical convex mirror, and the radius of curvature R is 0.3 mm.

[0064] In each of the semiconductor laser devices of the comparative example and the present embodiment, the semiconductor laser element 10 has a ridge with a width of 45 μm. The wavelength of the laser light is 450 nm, and the power of the laser light is 5 W. The divergence angle θ in the fast axis direction is f is 21°, and the divergence angle θ s is 8.35°.

[0065] The distance d is 0.5 mm and the height h is 2 mm.

[0066] Under these conditions, the light density distribution on the irradiation surface 50S was calculated, and as shown in Figure 13, in the comparative example, the beam diameters (twice the spot size) in the fast axis direction and slow axis direction were 2.5 mm and 1.1 mm, respectively.

[0067] On the other hand, in this embodiment, as shown in FIG. 14, the beam diameters in the fast axis direction and the slow axis direction were 2.5 mm and 2.4 mm, respectively.

[0068] In this way, in the semiconductor laser device 1 according to the present embodiment, the spot size can be enlarged by increasing the divergence angle in the slow axis direction using the reflecting surface 31. Therefore, the aspect ratio of the beam shape on the irradiation surface 50S can be reduced.

[0069] The configuration example of the semiconductor laser device 1 according to this embodiment is not limited to the example described above. The configuration example of the semiconductor laser device 1 according to this embodiment will be described with reference to Fig. 15. Fig. 15 is a diagram showing each parameter of the configuration example of the semiconductor laser device 1 according to this embodiment.

[0070] FIG. 15 shows the divergence angle θ in the fast axis direction of the semiconductor laser device 1. f , divergence angle θ in the slow axis direction s , distance d, height h, spot size a in the slow axis direction at the irradiation plane 50S s , spot size in the fast axis direction a f15 also shows the aspect ratio of the beam shape at the irradiation surface 50S. For reference, Fig. 15 also shows the aspect ratio when the radius of curvature R of the reflecting surface 31 is set to infinity (i.e., when the reflecting surface 31 is replaced with a flat mirror).

[0071] As shown in FIG. 15, in any of the configuration examples A to K, the aspect ratio can be reduced more than when the reflecting surface 31 is replaced with a plane mirror.

[0072] 15, the parameters other than the radius of curvature R are equal to one another. From the radius of curvature R and aspect ratios of configuration examples A to C, it can be seen that the aspect ratio decreases as the radius of curvature R decreases. Similarly, from the radius of curvature R and aspect ratios of configuration examples D to F and configuration examples G to I, it can be seen that the aspect ratio decreases as the radius of curvature R decreases. In this way, by appropriately setting the radius of curvature R, it is possible to achieve a desired aspect ratio.

[0073] The aspect ratio may be greater than or equal to 1 / 2 and less than or equal to 2. For example, as in configuration example J, the aspect ratio may be approximately 2.

[0074] The aspect ratio may be 9 / 16 or more and 16 / 9 or less. For example, the aspect ratio may be 16 / 9 as in configuration example K. This allows the semiconductor laser device 1 to be used as a light source for a display element of a display having an aspect ratio of 16 / 9. Such a display may be, for example, a display using a liquid crystal, a digital micromirror device (DMD), or the like.

[0075] [1-5. Package structure example] Examples of the package structure of the semiconductor laser device 1 and the light emitting device 2 according to this embodiment will be described with reference to Figs. 16 to 20. Figs. 16 and 17 are a perspective view and a plan view, respectively, showing the package structure of the light emitting device 2 according to this embodiment. Fig. 18 is an exploded perspective view showing the package structure of the light emitting device 2 according to this embodiment. Figs. 19 and 20 are a first cross-sectional view and a second cross-sectional view, respectively, showing the package structure of the light emitting device 2 according to this embodiment.

[0076] 16, the light emitting device 2 includes a semiconductor laser device 1 and a wavelength conversion element 50. In this embodiment, the light emitting device 2 further includes a support member 52.

[0077] 18, the semiconductor laser device 1 includes a semiconductor laser element 10 and a first reflecting element 30. In this embodiment, the semiconductor laser device 1 further includes a submount 20, a base 81, a frame 84, a lid 86, and a light-transmitting window 88.

[0078] The base 81 is a base for the semiconductor laser device 1. The semiconductor laser element 10 is disposed on the base 81. In this embodiment, the submount 20, the first reflecting element 30, and the frame 84 are disposed on the base 81. The base 81 may be formed of, for example, a material with high thermal conductivity. This allows heat generated in the semiconductor laser element 10 and the first reflecting element 30 to be efficiently dissipated. The base 81 may be formed of, for example, a metal material such as Cu. The base 81 has a base substrate 82 and a laser base 90. The base substrate 82 is a plate-shaped member. In this embodiment, the base substrate 82 is a plate-shaped member having a rectangular shape when viewed from above. In this embodiment, the base substrate 82 and the laser base 90 are integrally formed.

[0079] The laser base 90 is a member disposed on the base substrate 82 and on which the semiconductor laser element 10 is disposed. The laser base 90 has a rectangular shape when viewed from above. As shown in FIGS. 18 and 19, the upper surface of the laser base 90 has an arrangement surface S0 and a first mirror arrangement surface S1. In this embodiment, the upper surface of the laser base 90 further has a second mirror arrangement surface S2.

[0080] The mounting surface S0 is a surface on which the semiconductor laser element 10 is mounted. As shown in Fig. 19, the mounting surface S0 is a plane parallel to the upper and lower surfaces of the base substrate 82. In this embodiment, the semiconductor laser element 10 is mounted on the mounting surface S0 via the submount 20.

[0081] The first mirror arrangement surface S1 is a surface on which the first reflecting element 30 is arranged. The first mirror arrangement surface S1 is a surface parallel to the generatrix 31M of the first reflecting element 30 and the slow axis direction of the laser light. The height of a point on the first mirror arrangement surface S1 (in other words, its position in the Z-axis direction) increases with increasing distance from the arrangement surface S0. In this embodiment, of the points on the first mirror arrangement surface S1, the point closest to the arrangement surface S0 (i.e., the point with the shortest distance in the Y-axis direction) is located below the arrangement surface S0 (on the negative side in the Z-axis direction).

[0082] The second mirror placement surface S2 is a surface connecting the first mirror placement surface S1 and the placement surface S0. An end face of the first reflecting element 30 may be placed on the second mirror placement surface S2. The height of a point on the second mirror placement surface S2 decreases as it moves away from the placement surface S0. In this embodiment, of the points on the second mirror placement surface S2, the point closest to the placement surface S0 (i.e., the point whose distance in the Y-axis direction is 0) is at the same height as the placement surface S0.

[0083] As shown in FIG. 18 , a first electrode 21 and a second electrode 22 are disposed on the upper surface of the submount 20. The second electrode 22 is electrically insulated from the first electrode 21. The semiconductor laser element 10 is disposed on the second electrode 22. In this embodiment, the second electrode 22 is connected to a p-side electrode of the semiconductor laser element 10. The first electrode 21 is connected to an n-side electrode located on the upper surface of the semiconductor laser element 10 via a wire 24. Power to the first electrode 21 and the second electrode 22 is supplied from outside the semiconductor laser device 1 via a current introduction terminal provided on a frame 84 or the like. The space between the frame 84 or the like and the current introduction terminal may be hermetically sealed.

[0084] As described above, the semiconductor laser device 10 is disposed so that the longitudinal direction of the optical waveguide 10W is parallel to the placement surface S0. In this embodiment, the longitudinal direction of the optical waveguide 10W is parallel to the Y-axis direction.

[0085] The frame 84 is a frame-shaped member that surrounds the semiconductor laser element 10 and the reflecting surface 31. In this embodiment, the frame 84 has a rectangular cylindrical shape, and the laser base 90 of the base 81 is inserted inside. The frame 84 is placed on the base substrate 82 of the base 81. The outer shape of the frame 84 in a top view may be the same as the shape of the outer edge of the base 81 (i.e., the shape of the outer edge of the base substrate 82). The material from which the frame 84 is formed is not particularly limited. The frame 84 is formed, for example, from the same material as the base 81.

[0086] The lid 86 is a plate-like member that covers the cylindrical portion of the frame 84. In this embodiment, the lid 86 has a rectangular shape in top view as shown in FIG. 17, and has an opening 86a as shown in FIGS. 19 and 20. The opening 86a is a through-hole that passes through the lid 86 in the Z-axis direction, and allows the laser light reflected by the reflecting surface 31 to pass through. In this embodiment, the opening 86a has a rectangular shape in top view. The material from which the lid 86 is formed is not particularly limited. The lid 86 is formed, for example, from the same material as the base 81.

[0087] The light-transmitting window 88 is a light-transmitting member that is transparent to laser light. The light-transmitting window 88 is disposed on the lid 86 and covers the opening 86a. In this embodiment, the light-transmitting window 88 is a light-transmitting member in the shape of a rectangular plate. For example, a glass plate or the like can be used as the light-transmitting window 88.

[0088] The support member 52 is a member that supports the wavelength conversion element 50. In this embodiment, the support member 52 has a bowl-like shape. The support member 52 is disposed on the lid 86 and covers the light-transmitting window 88. The support member 52 has an opening 52a. The opening 52a is a through-hole that penetrates the support member 52 in the Z-axis direction. The shape of the opening 52a in a top view matches the shape of the wavelength conversion element 50 in a top view. In this embodiment, the shape of the opening 52a in a top view is rectangular. A space is formed between the opening 52a of the support member 52 and the light-transmitting window 88. This makes it possible to prevent interference between the light-transmitting window 88 and the wavelength conversion element 50. The material from which the support member 52 is formed is not particularly limited. The support member 52 is formed, for example, from the same material as the base 81.

[0089] The components constituting the semiconductor laser device 1 are hermetically sealed. That is, the base 81 and the frame 84, the frame 84 and the lid 86, and the lid 86 and the light-transmitting window 88 are hermetically sealed. In this manner, the semiconductor laser element 10 and the reflecting surface 31 are hermetically sealed. This makes it possible to prevent foreign matter from adhering to the semiconductor laser element 10 and the reflecting surface 31. In particular, when the semiconductor laser element 10 emits laser light of 500 nm or less, as in this embodiment, impurities may adhere to the emission point 10e, where light density is high, due to the optical tweezers effect, which may cause a decrease in optical output. In this embodiment, by hermetically sealing the semiconductor laser element 10, such a decrease in optical output can be prevented.

[0090] In addition, the support member 52 and the wavelength converting element 50, and the support member 52 and the lid 86 may also be hermetically sealed.

[0091] Configuration example 1 of the first reflecting element 30 and the first mirror arrangement surface S1 in this package structure will be described with reference to Figs. 21 and 22. Fig. 21 is a first cross-sectional view showing configuration example 1 of the first reflecting element 30 according to the present embodiment. Fig. 21 shows a cross section passing through the generatrix 31M of the reflecting surface 31 and perpendicular to the slow axis direction of the laser light. Fig. 22 is a second cross-sectional view showing configuration example 1 of the first reflecting element 30 according to the present embodiment. Fig. 22 shows a cross section perpendicular to the generatrix 31M of the first reflecting element 30.

[0092] As shown in FIGS. 21 and 22 , the first reflecting element 30 of Configuration Example 1 has a cylindrical shape. The cylindrical surface of the first reflecting element 30 is the reflecting surface 31. The reflecting surface 31 may be formed of, for example, a metal film or a dielectric multilayer film. The first mirror mounting surface S1 has a concave surface S3 on which the first reflecting element 30 is mounted. The cross section of the concave surface S3 of Configuration Example 1 perpendicular to the generatrix 31M has an arc-shaped cross section. The radius of curvature of the arc-shaped cross section of the concave surface S3 is larger than the radius of curvature of the reflecting surface 31. This allows the first reflecting element 30 to be mounted in contact with the concave surface S3. The first reflecting element 30 and the concave surface S3 may be bonded together with an adhesive or the like. According to Configuration Example 1, the first reflecting element 30 and the concave surface S3 can be easily formed. Furthermore, the first reflecting element 30 can be easily mounted on the concave surface S3.

[0093] A second configuration example of the first reflecting element 30 and the first mirror arrangement surface S1 in this package structure will be described with reference to Figs. 23 and 24. Fig. 23 is a first cross-sectional view showing the second configuration example of the first reflecting element 30 according to the present embodiment. Fig. 23 shows a cross section passing through the generatrix 31M of the reflecting surface 31 and perpendicular to the slow axis direction of the laser light. Fig. 24 is a second cross-sectional view showing the second configuration example of the first reflecting element 30 according to the present embodiment. Fig. 24 shows a cross section perpendicular to the generatrix 31M of the first reflecting element 30.

[0094] 23 and 24, the first reflecting element 30 of Configuration Example 2 has a cylindrical shape, similar to Configuration Example 1. The cylindrical surface of the first reflecting element 30 is the reflecting surface 31. The first mirror mounting surface S1 has a concave surface S3 on which the first reflecting element 30 is disposed. The cross section of the concave surface S3 of Configuration Example 2, perpendicular to the generatrix 31M, is V-shaped. That is, the concave surface S3 is composed of two inclined surfaces. The angle between the two inclined surfaces (i.e., the angle between the two line segments constituting the V-shaped cross section) may be 90° or more. This allows the cylindrical surface of the first reflecting element 30 to contact the concave surface S3. This makes it easy to position the first reflecting element 30. The first reflecting element 30 and the concave surface S3 are bonded together, for example, with an adhesive 98. Similar to Configuration Example 1, Configuration Example 2 also makes it easy to form the first reflecting element 30 and the concave surface S3. In addition, it is also easy to arrange the first reflecting element 30 on the concave surface S3.

[0095] Configuration 3 of first reflecting element 30 in this package structure will be described with reference to Fig. 25. Fig. 25 is a cross-sectional view showing configuration example 3 of first reflecting element 30 according to the present embodiment. Fig. 25 shows a cross section passing through generatrix 31M of reflecting surface 31 and perpendicular to the slow axis direction of the laser light.

[0096] 25 , the first reflecting element 30 of Configuration Example 3 has a bottom surface 35 that is parallel to and in contact with the placement surface S0, and a reflecting surface 31. According to Configuration Example 3 of such a first reflecting element 30, the structure of the upper surface of the laser base 90 can be simplified, which makes it easier to manufacture the laser base 90 and the base 81.

[0097] Configuration example 4 of the first reflecting element 30 and the first mirror arrangement surface S1 in this package structure will be described with reference to Figs. 26 and 27. Fig. 26 is a first cross-sectional view showing configuration example 4 of the first reflecting element 30 according to this embodiment. Fig. 26 shows a cross section passing through the generatrix 31M of the reflecting surface 31 and perpendicular to the slow axis direction of the laser light. Fig. 27 is a second cross-sectional view showing the configuration of the first reflecting element 30 according to this embodiment. Fig. 27 shows a cross section perpendicular to the generatrix 31M of the first reflecting element 30.

[0098] 26 and 27, the first reflecting element 30 of Configuration Example 4 has a plate-like shape. The first reflecting element 30 has a base material 32 and a reflective film .

[0099] The substrate 32 is a plate-shaped member. The substrate 32 is formed of, for example, glass. The substrate 32 is placed on the first mirror placement surface S1. The surface of the substrate 32 facing the first mirror placement surface S1 is flat and is in contact with the first mirror placement surface S1. The substrate 32 has two flange portions 32f and a protruding portion 32p. The flange portion 32f is a portion having a flat plate shape. The protruding portion 32p is located between the two flange portions 32f and has a portion that protrudes in a direction away from the first mirror placement surface S1. In this embodiment, the surface of the portion of the protruding portion 32p that protrudes from the flange portion 32f includes a cylindrical surface.

[0100] The reflective film 34 is formed on the surface of the base material 32 and is a film that reflects laser light. The surface of the reflective film 34 has a reflective surface 31 and two flat surfaces 31b. The reflective film 34 is, for example, a metal film or a dielectric multilayer film. The surface of the reflective film 34 formed on the protruding portion 32p of the base material 32 is the reflective surface 31. The reflective surface 31 has the same configuration as the reflective surface 31 in the first embodiment and the like. The surface of the reflective film 34 formed on the flange portion 32f is the flat surface 31b, which is a flat mirror. The flat surface 31b is adjacent to the reflective surface 31 in the X-axis direction (i.e., the slow-axis direction of the laser light) and is a plane that is parallel to the generatrix 31M and the X-axis direction.

[0101] In the fourth configuration example of the first reflecting element 30, the first reflecting element 30 has the flange portion 32f, which makes it possible to realize an easy-to-handle first reflecting element 30. Furthermore, since the shape of the first mirror placement surface S1 is flat, the structure of the laser base 90 can be simplified compared to the first configuration example and the like.

[0102] Configuration example 5 of the first reflecting element 30 and the first mirror arrangement surface S1 in this package structure will be described with reference to Figs. 28 and 29. Fig. 28 is a first cross-sectional view showing configuration example 5 of the first reflecting element 30 according to the present embodiment. Fig. 28 shows a cross section passing through the generatrix 31M of the reflecting surface 31 and perpendicular to the slow axis direction of the laser light. Fig. 29 is a second cross-sectional view showing configuration example 5 of the first reflecting element 30 according to the present embodiment. Fig. 29 shows a cross section perpendicular to the generatrix 31M of the first reflecting element 30.

[0103] 28 and 29, the first reflecting element 30 of Configuration Example 5 has a plate-like shape. The first reflecting element 30 has a base material 32 and a reflective film .

[0104] The substrate 32 is a plate-shaped member. The substrate 32 is formed of, for example, glass. The substrate 32 is placed on the first mirror placement surface S1. The surface of the substrate 32 facing the first mirror placement surface S1 is flat and in contact with the first mirror placement surface S1. The substrate 32 has two flange portions 32f and a protruding portion 32p. The flange portion 32f is a portion having a flat plate shape. The protruding portion 32p is located between the two flange portions 32f and has a portion that protrudes in a direction away from the first mirror placement surface S1. In this embodiment, the thickness of the protruding portion 32p (the dimension in the vertical direction in FIG. 29) is equal to the thickness of the flange portion 32f. As shown in FIG. 29, a recess is formed between the protruding portion 32p and the flange portion 32f.

[0105] The reflective film 34 is formed on the surface of the base material 32 and is a film that reflects laser light. The surface of the reflective film 34 has a reflective surface 31, two flat surfaces 31b, and two inclined surfaces 31c. The reflective film 34 is, for example, a metal film or a dielectric multilayer film. The surface of the reflective film 34 formed on the protruding portion 32p of the base material 32 is the reflective surface 31. The reflective surface 31 has a configuration similar to that of the reflective surface 31 in the first embodiment. The surface of the reflective film 34 formed on the flange portion 32f is the flat surface 31b, which is a flat mirror. The flat surface 31b is arranged in the X-axis direction (i.e., the slow axis direction of the laser light) with respect to the reflective surface 31 via the inclined surface 31c, and is a plane parallel to the generatrix 31M and the X-axis direction. The inclined surface 31c is located between the reflective surface 31 and the flat surface 31b and is inclined with respect to the first mirror arrangement surface S1. In the cross section shown in FIG. 29, one end of the inclined surface 31c contacts the reflecting surface 31, and the other end contacts the flat surface 31b.

[0106] In the configuration example 5 of the first reflecting element 30, similarly to the configuration example 4, the first reflecting element 30 has the flange portion 32f, so that it is possible to realize an easy-to-handle first reflecting element 30. Furthermore, since the shape of the first mirror placement surface S1 is flat, the structure of the laser base 90 can be simplified compared to the configuration example 1 and the like.

[0107] A method for manufacturing first reflecting element 30 in Configuration Example 5 will be described with reference to Fig. 30 to Fig. 33. Fig. 30 to Fig. 33 are cross-sectional views illustrating the steps of the method for manufacturing first reflecting element 30 in Configuration Example 5 according to the present embodiment.

[0108] First, a base material 32 having a flat plate shape is prepared as shown in Fig. 30. In this embodiment, the base material 32 is prepared from photosensitive glass.

[0109] Next, as shown in FIG. 31, the upper surface, which is one of the main surfaces of the base material 32, is processed to form flange portions 32f and protrusions 32p. This processing can be achieved, for example, by using a grayscale mask. In this embodiment, three or more flange portions 32f and two or more protrusions 32p are formed on one base material 32. The protrusions 32p are located between two adjacent flange portions 32f. The upper surface of the protrusions 32p has a cylindrical shape.

[0110] Subsequently, as shown in FIG. 32, a reflective film 34 is formed on the upper surface of the substrate 32.

[0111] 33, flange portion 32f of base material 32 is cut to form a plurality of first reflecting elements 30. As shown in FIG.

[0112] As described above, the fifth configuration example of first reflecting element 30 can be manufactured.

[0113] (Embodiment 2) A semiconductor laser device and a light emitting device according to embodiment 2 will be described. The semiconductor laser device according to this embodiment differs from semiconductor laser device 1 according to embodiment 1 in that it has a reflective side surface that reflects a portion of the laser light reflected by reflective surface 31. The following describes the semiconductor laser device according to this embodiment, focusing on the differences from semiconductor laser device 1 according to embodiment 1.

[0114] [2-1. Overall composition] The overall configuration of a semiconductor laser device and a light emitting device according to this embodiment will be described with reference to Figs. 34 to 36. Figs. 34 and 35 are cross-sectional views showing the overall configuration of light emitting device 102 according to this embodiment. Fig. 34 shows a cross section including a first optical axis Ax1 and a second optical axis Ax2 of laser light. Fig. 35 shows a cross section including the second optical axis Ax2 of laser light and parallel to the slow axis direction of the laser light. Fig. 36 is a perspective view showing the configuration of second reflecting element 70 according to this embodiment.

[0115] 34 and 35, a light emitting device 102 according to the present embodiment includes a semiconductor laser device 101 and a wavelength conversion element 50. In the present embodiment, the light emitting device 102 further includes a support member 52.

[0116] The semiconductor laser device 101 according to this embodiment includes a semiconductor laser element 10, a reflecting surface 31, and a reflecting side surface 70M. In this embodiment, the semiconductor laser device 101 includes a first reflecting element 30 having the reflecting surface 31, and a second reflecting element 70 having the reflecting side surface 70M. The semiconductor laser device 101 further includes a submount 20.

[0117] The reflective side surface 70M reflects only a portion of the laser beam reflected by the reflective surface 31. In this embodiment, the reflective side surface 70M is parallel to a second optical axis Ax2, which is the optical axis of the laser beam reflected by the reflective surface 31. The reflective side surface 70M is disposed between the reflective surface 31 and the irradiation surface 50S. As shown in FIG. 34, the reflective side surface 70M has a pair of flat surfaces parallel to the second optical axis Ax2 and the slow axis of the laser beam. The pair of flat surfaces is an example of a first reflective side surface perpendicular to the fast axis of the laser beam propagating along the second optical axis Ax2. Also, as shown in FIG. 35, the reflective side surface 70M has a pair of flat surfaces parallel to the second optical axis Ax2 and the fast axis of the laser beam reflected by the reflective surface 31. The pair of flat surfaces is an example of a second reflective side surface perpendicular to the slow axis of the laser beam propagating along the second optical axis Ax2. As shown in FIG. 36, the reflective side surface 70M according to this embodiment has a rectangular cylindrical shape.

[0118] The distance from the reflective side surface 70M to the second optical axis Ax2 is greater than 0 and smaller than the spot size of the laser light on the irradiation surface 50S (i.e., the spot size of the laser light that would propagate if the reflective side surface 70M were not present). More specifically, the distance from a pair of flat surfaces of the reflective side surface 70M that are parallel to the second optical axis Ax2 and the slow axis of the laser light to the second optical axis Ax2 is greater than 0 and smaller than the spot size of the laser light in the fast axis direction on the irradiation surface 50S. The distance from a pair of flat surfaces of the reflective side surface 70M that are parallel to the second optical axis Ax2 and the fast axis of the laser light reflected by the reflective surface 31 to the second optical axis Ax2 is greater than 0 and smaller than the spot size of the laser light in the slow axis direction on the irradiation surface 50S.

[0119] Furthermore, in this embodiment, the distance from the reflective side surface 70M to the second optical axis Ax2 is greater than 0 and is greater than the spot size of the laser light in a plane including the end face of the reflective side surface 70M closest to the reflective surface 31. More specifically, the distance from a pair of flat surfaces of the reflective side surface 70M that are parallel to the second optical axis Ax2 and the slow axis of the laser light to the second optical axis Ax2 is greater than 0 and is smaller than the spot size of the laser light in the fast axis direction in a plane including the end face of the reflective side surface 70M closest to the reflective surface 31. The distance from a pair of flat surfaces of the reflective side surface 70M that are parallel to the second optical axis Ax2 and the fast axis of the laser light reflected by the reflective surface 31 to the second optical axis Ax2 is greater than 0 and is smaller than the spot size of the laser light in the slow axis direction in a plane including the end face of the reflective side surface 70M closest to the reflective surface 31. This makes it possible to prevent the laser light propagating on the second optical axis Ax2 from propagating outside the reflective side surface 70M. That is, the laser light propagating on the second optical axis Ax2 is confined within the internal space surrounded by the reflecting side surface 70M.

[0120] [2-2. Effects] The following describes the effects of the semiconductor laser device 101 and the light emitting device 102 according to this embodiment. The semiconductor laser device 101 and the light emitting device 102 according to this embodiment also achieve the same effects as the semiconductor laser device 1 and the light emitting device 2 according to the first embodiment.

[0121] Further effects of the semiconductor laser device 101 and the light-emitting device 102 according to this embodiment will be described with reference to FIGS. 37 to 39. FIG. 37 is a diagram illustrating an irradiation surface 50S, on which laser light is irradiated, in the semiconductor laser device 101 according to this embodiment. In FIG. 37, positions corresponding to the second reflecting element 70 and the reflective side surface 70M are also indicated by dotted lines. In addition, in FIG. 37, a central axis Axc, which passes through the second optical axis Ax2 and is parallel to the Y-axis direction, is indicated by a dashed-dotted line. FIG. 38 is a schematic graph illustrating the light intensity distribution at a position on the central axis Axc illustrated in FIG. 37. In FIG. 38, the light intensity distribution of the laser light propagating along the central axis of the irradiation surface 50S in the absence of the reflective side surface 70M, the intensity distribution of the laser light reflected by the reflective side surface 70M, and a light intensity distribution obtained by superimposing these (i.e., the light intensity distribution on the central axis of the irradiation surface 50S according to this embodiment) are illustrated. In addition, FIG. 38 also illustrates the position of the reflective side surface 70M. Fig. 39 is a diagram showing the light density distribution on the irradiation surface 50S of the semiconductor laser device 101 according to this embodiment. In Fig. 39, the closer the color of each region is to black, the higher the light density.

[0122] As described above, the laser light propagating along the second optical axis Ax2 is confined within the internal space surrounded by the reflective side surface 70M. The laser light does not propagate beyond the reflective side surface 70M on the central axis Axc shown in FIG. 37, but is reflected by the reflective side surface 70M. If the reflective side surface 70M were not present, the light propagating beyond the position of the reflective side surface 70M would be reflected by the reflective side surface 70M and irradiated onto the irradiation surface 50S. The light intensity distribution on the irradiation surface 50S of the laser light reflected by the reflective side surface 70M in this manner is shown by the dotted line in FIG. 38. Therefore, the laser light reflected by the reflective side surface 70M and the laser light not reflected by the reflective side surface 70M (light intensity distribution shown by the dashed line in FIG. 38) overlap. This results in a light intensity distribution as shown by the solid line in FIG. 38. In this way, by reflecting a portion of the laser light off the reflective side surface 70M and irradiating the irradiation surface with the laser light, the light intensity distribution on the irradiation surface 50S can be made uniform, as shown by the solid line in FIG. 38 . In other words, the light density distribution on the irradiation surface 50S can be made uniform, as shown in FIG. 39 . In the semiconductor laser device 101 according to this embodiment, the divergence angle of the laser light in the slow-axis direction can be increased by the reflective surface 31, and therefore, the laser light reflected by the reflective side surface 70M can be propagated to the vicinity of the second optical axis Ax2 in the slow-axis direction over a short distance. This enhances the effect of making the light intensity uniform by the reflective side surface 70M.

[0123] Furthermore, by preventing the laser light from propagating outside the reflective side surface 70M, the shape and size of the area on the irradiation surface 50S that is irradiated with the laser light can be adjusted by the position and shape of the reflective side surface 70M.

[0124] [2-3. Package structure example] An example of the package structure of light emitting device 102 according to this embodiment will be described with reference to Fig. 40 and Fig. 41. Fig. 40 and Fig. 41 are a first cross-sectional view and a second cross-sectional view showing the package structure of light emitting device 102 according to this embodiment.

[0125] 40 and 41, the light emitting device 102 according to the present embodiment differs from the light emitting device 2 according to the first embodiment in that it includes a second reflecting element 70. In an example of a package structure of the light emitting device 102 according to the present embodiment, the second reflecting element 70 may be disposed between the irradiation surface 50S and the light-transmitting window 88, as shown in FIGS. 40 and 41. The distance between the irradiation surface 50S and the light-transmitting window 88 may be equal to the dimension of the second reflecting element 70 in the direction of the second optical axis Ax2 (i.e., the Z-axis direction).

[0126] [2-4. Example of the second reflecting element] Configuration example 1 of second reflecting element 70 according to the present embodiment will be described with reference to Fig. 42. Fig. 42 is a plan view illustrating configuration example 1 of second reflecting element 70 according to the present embodiment. As shown in Fig. 42, second reflecting element 70 has four reflecting members 71. In the present embodiment, each of the four reflecting members 71 has the same configuration.

[0127] The reflecting member 71 is a plate-like member having a flat reflecting side surface 70M. The reflecting member 71 has a plate-like member 72 and a reflecting film 74. The plate-like member 72 is a member that serves as a base for the reflecting member 71. In this embodiment, the plate-like member 72 is a glass plate having a rectangular plate shape. The reflecting film 74 is a film disposed on one main surface of the plate-like member 72, and reflects the laser light. The reflecting film 74 is, for example, a metal film, a dielectric multilayer film, or the like.

[0128] As shown in FIG. 42 , the reflective side surfaces 70M of a pair of reflecting members 71 are disposed opposite to and parallel to each other. Furthermore, the reflective side surfaces 70M of another pair of reflecting members 71 are disposed perpendicular to the reflective side surfaces 70M of the aforementioned pair of reflecting members 71. The reflective side surfaces 70M of the other pair of reflecting members 71 are disposed opposite to and parallel to each other. In the example shown in FIG. 42 , the positions of a pair of reflective side surfaces 70M facing each other in the X-axis direction (i.e., a pair of reflective side surfaces perpendicular to the X-axis direction) in the Y-axis direction are shifted by the thickness of the reflective members 71. Furthermore, the distance between the pair of reflective side surfaces 70M facing each other in the X-axis direction is shorter than the length of one side of the main surface of the reflective member 71 by the thickness of the reflective member 71. Furthermore, the positions of the pair of reflective side surfaces 70M facing each other in the Y-axis direction (i.e., a pair of reflective side surfaces perpendicular to the X-axis direction) in the X-axis direction are shifted by the thickness of the reflective member 71. Furthermore, the distance between the pair of reflective side surfaces 70M facing each other in the Y-axis direction is shorter than the length of one side of the main surface of the reflective member 71 by the thickness of the reflective member 71. As a result, one reflective side surface 70M is disposed perpendicularly on another reflective side surface 70M, thereby forming a second reflective element 70 in the shape of a rectangular cylinder.

[0129] Configuration example 1 of second reflecting element 70 is made up of only four reflecting members 71 having a simplified configuration, and can therefore be easily manufactured.

[0130] A second configuration example of the second reflecting element 70 according to the present embodiment will be described with reference to Fig. 43. Fig. 43 is a plan view illustrating a second configuration example of the second reflecting element 70 according to the present embodiment. As shown in Fig. 43, the second reflecting element 70 has two reflecting members 71. In the present embodiment, each of the two reflecting members 71 has the same configuration.

[0131] The reflecting member 71 has a reflecting side surface 70M consisting of two reflecting surfaces that are perpendicular to each other. The reflecting member 71 has a plate-like shape bent at a right angle. The reflecting member 71 has a plate-like member 72 and a reflecting film 74. The plate-like member 72 is a member having a plate-like shape bent at a right angle. The plate-like member 72 is made of, for example, glass. The reflecting film 74 is a film formed in the recesses of the plate-like member 72 and reflects the laser light. The reflecting film 74 is, for example, a metal film, a dielectric multilayer film, or the like.

[0132] In configuration example 2 of second reflecting element 70, two reflecting side surfaces 70M are combined to form a rectangular cylindrical reflecting surface.

[0133] Configuration example 2 of second reflecting element 70 can be easily manufactured because it is made up of only two reflecting members 71 with a simplified configuration. Furthermore, because plate-like member 72 has reflecting side surfaces 70M bent at a right angle, it is possible to prevent misalignment of the positions and angles of two mutually perpendicular reflecting surfaces of reflecting side surfaces 70M.

[0134] Structural example 3 of second reflecting element 70 according to the present embodiment will be described with reference to Fig. 44. Fig. 44 is a plan view illustrating structural example 3 of second reflecting element 70 according to the present embodiment. As shown in Fig. 44, second reflecting element 70 has a light-transmitting member 76 and a reflective film 74.

[0135] The light-transmitting member 76 is a columnar member that is transmissive to the laser light emitted by the semiconductor laser device 10. In Configuration Example 3, the light-transmitting member 76 has a quadrangular columnar shape.

[0136] The reflective film 74 is a film formed on the side surfaces of the light-transmitting member 76 and reflects the laser light. In this embodiment, the reflective film 74 is formed on four side surfaces. The reflective film 74 is not formed on the pair of bottom surfaces of the light-transmitting member 76. The reflective film 74 is, for example, a metal film or a dielectric multilayer film. An anti-reflective film that reduces the reflectance of the laser light may be formed on the pair of bottom surfaces of the light-transmitting member 76. The anti-reflective film is, for example, a dielectric multilayer film.

[0137] Configuration example 3 of second reflecting element 70 is made up of members having a simplified configuration, and therefore can be easily manufactured.

[0138] Configuration example 4 of second reflecting element 70 according to the present embodiment will be described with reference to Figs. 45 to 47. Fig. 45 is a perspective view illustrating configuration example 4 of second reflecting element 70 according to the present embodiment. Fig. 46 is a diagram illustrating the state of refraction and reflection of laser light in configuration example 4 of second reflecting element 70 according to the present embodiment. Fig. 46 shows a view from a direction perpendicular to the fast axis of the laser light. Fig. 46 also shows the divergence angle θ of laser light in the slow axis direction. x The divergence angle θ x 10 is a graph showing the relationship between the refractive index n and the minimum refractive index required for the second reflecting element 70.

[0139] As shown in FIG. 45, the second reflecting element 70 is a light-transmitting member 76. The light-transmitting member 76 is a columnar member that is transmissive to the laser light emitted by the semiconductor laser device 10. In Configuration Example 4, the light-transmitting member 76 has a quadrangular columnar shape. The side surfaces of the light-transmitting member 76 function as reflective side surfaces 70M. In Configuration Example 4 of the second reflecting element 70, the laser light is totally reflected by the side surfaces of the light-transmitting member 76. An anti-reflection film may be formed on a pair of bottom surfaces of the light-transmitting member 76.

[0140] In the fourth configuration example, the minimum refractive index n required for the laser light to be totally reflected by the side surface of the light-transmitting member 76 is, when the refractive index of the air surrounding the light-transmitting member 76 is 1, the divergence angle θ x Based on this, it can be analytically calculated using the following equation (8).

[0141]

number

[0142] The results of calculation using equation (8) are shown in the graph in Figure 47. As shown in Figure 47, the refractive index n is proportional to the divergence angle θ xWhen the refractive index of the light-transmitting member 76 is 1.41 or more, the divergence angle θ x For example, the material forming the light-transmitting member 76 may be BK7, which has a refractive index of 1.527.

[0143] In configuration example 4 of second reflecting element 70, there is no need to form a reflective film, so second reflecting element 70 can be manufactured even more easily.

[0144] [2-5. Method of manufacturing the second reflective element] An example of a method for manufacturing a second reflecting element 70 according to the present embodiment will be described. Here, a method for manufacturing a second reflecting element 70 shown in Fig. 36 will be described using Figs. 48 to 53. Figs. 48, 49, 51, and 53 are schematic perspective views showing each step of a method for manufacturing a second reflecting element 70 according to the present embodiment. Figs. 50 and 52 are schematic cross-sectional views showing each step of a method for manufacturing a second reflecting element 70 according to the present embodiment. Fig. 50 shows a cross section taken along line XXXXX-XXXXX shown in Fig. 49. Fig. 52 shows a cross section taken along line XXXXXII-XXXXXII shown in Fig. 51.

[0145] 48, first, a plate-shaped member 72 is prepared. In this embodiment, the plate-shaped member 72 is prepared as a rectangular glass plate.

[0146] Next, as shown in Figures 49 and 50, openings 70a are formed in the plate-like member 72. The openings 70a are through-holes that penetrate the plate-like member 72 in the thickness direction. In this embodiment, a plurality of openings 70a arranged in a matrix are formed. Each of the plurality of openings 70a has a rectangular shape when viewed from above the plate-like member 72. The plurality of openings 70a can be formed by, for example, etching or drilling.

[0147] 51 and 52, a reflective film 74 is formed in the opening 70a. In the present embodiment, the reflective film 74 is formed in the opening 70a and on a pair of main surfaces of the plate-like member 72. The reflective film 74 can be formed by using, for example, atomic layer deposition (ALD).

[0148] Subsequently, as shown in Fig. 53, plate-shaped member 72 is divided into individual pieces. Specifically, plate-shaped member 72 is cut between two adjacent openings 70a. In this way, a plurality of second reflecting elements 70 can be manufactured.

[0149] [2-6. Modifications] Modification 1 of second reflecting element 70 according to the present embodiment will be described with reference to Fig. 54. Fig. 54 is a plan view illustrating Modification 1 of second reflecting element 70 according to the present embodiment.

[0150] 54, the second reflecting element 70 has two reflecting members 71. In the first modification, each of the two reflecting members 71 has the same configuration.

[0151] The reflecting member 71 has a configuration similar to that of the reflecting member 71 in Configuration Example 1 described above. As shown in FIG. 54, the reflecting side surfaces 70M of the pair of reflecting members 71 are arranged opposite and parallel to each other. In the example shown in FIG. 54, the reflecting side surfaces 70M are arranged perpendicular to the slow axis direction. As a result, a portion of the laser light diverging in the slow axis direction is reflected by the reflecting side surfaces 70M.

[0152] As in Modification 1, the second reflecting element 70 may have a pair of reflective side surfaces 70M. For example, when the second reflecting element 70 has a pair of reflective side surfaces 70M perpendicular to the slow axis direction, the light intensity distribution in the slow axis direction can be made uniform. Furthermore, by suppressing the propagation of the laser light outside the reflective side surfaces 70M in the slow axis direction, the shape and dimensions of the region on the irradiation surface 50S irradiated with the laser light can be adjusted by the position and shape of the reflective side surfaces 70M. Furthermore, because the second reflecting element 70 is composed of only two reflective members 71, the configuration of the second reflecting element 70 can be simplified.

[0153] In the first modification of second reflecting element 70, pair of reflecting side surfaces 70M may be disposed perpendicular to the fast axis direction.

[0154] Modification 2 of second reflecting element 70 according to the present embodiment will be described with reference to Fig. 55. Fig. 55 is a plan view illustrating Modification 2 of second reflecting element 70 according to the present embodiment. As shown in Fig. 55, second reflecting element 70 has a light-transmitting member 76 and a reflective film 74.

[0155] The light-transmitting member 76 is a columnar member that is transmissive to the laser light emitted by the semiconductor laser device 10. In the second modification, the light-transmitting member 76 has a quadrangular columnar shape.

[0156] The reflective film 74 is a film formed on the side surfaces of the light-transmitting member 76 and reflects the laser light. In Modification 2, the reflective film 74 is formed on a pair of opposing side surfaces. In Modification 2, the reflective film 74 is formed on a pair of side surfaces perpendicular to the slow axis direction. The reflective film 74 is not formed on the other pair of side surfaces of the light-transmitting member 76 (i.e., a pair of side surfaces perpendicular to the fast axis direction) and the pair of bottom surfaces. The reflective film 74 is, for example, a metal film or a dielectric multilayer film. An anti-reflective film that reduces the reflectance of the laser light may be formed on the pair of bottom surfaces of the light-transmitting member 76. The anti-reflective film is, for example, a dielectric multilayer film.

[0157] In the second modification, as in the first modification, the light intensity distribution in the slow axis direction can be made uniform. Furthermore, by suppressing the propagation of the laser light in the slow axis direction outside the reflective side surface 70M, the shape and dimensions of the region on the irradiation surface 50S irradiated with the laser light can be adjusted by the position and shape of the reflective side surface 70M. The second modification is easily manufactured because it is made up of members with a simplified configuration.

[0158] The light density distribution on the irradiation surface 50S when Modification 1 of the second reflecting element 70 is used in the semiconductor laser device 101 will be described with reference to Fig. 56. Fig. 56 is a diagram showing an example of the light density distribution on the irradiation surface 50S when Modification 1 of the second reflecting element 70 is used in the semiconductor laser device 101 according to the present embodiment. In Fig. 56, the closer the color of each region is to black, the higher the light density.

[0159] As shown in Fig. 56, even when Modification 1 of the second reflecting element 70 is used, the light density distribution on the irradiation surface 50S can be made uniform. Note that even when Modification 2 of the second reflecting element 70 is used in the semiconductor laser device 101, the light density distribution as shown in Fig. 56 can be obtained.

[0160] (Embodiment 3) A semiconductor laser device and a light emitting device according to embodiment 3 will be described. The semiconductor laser device according to this embodiment differs from the semiconductor laser device 1 according to embodiment 1 mainly in that it emits laser light and has a plurality of reflecting surfaces. The semiconductor laser device and the light emitting device according to this embodiment will be described below, focusing on the differences from the semiconductor laser device 1 and the light emitting device 2 according to embodiment 1.

[0161] [3-1. Overall structure and effects] The semiconductor laser device and light-emitting device according to this embodiment will be described with reference to FIGS. 57 to 61. FIG. 57 is a plan view showing the overall configuration of light-emitting device 202 according to this embodiment. FIG. 58 is a perspective view showing a portion of light-emitting device 202 according to this embodiment. FIG. 59 is a plan view showing the arrangement of one set of semiconductor laser element 10, submount 20, and first reflecting element 230 in semiconductor laser device 201 according to this embodiment. FIG. 59 shows an enlarged view of the semiconductor laser element 10, submount 20, and first reflecting element 230 located in the upper left of semiconductor laser device 101 shown in FIG. 57. FIGS. 60 and 61 are cross-sectional views showing the configuration of light-emitting device 202 according to this embodiment. FIG. 60 shows a cross section taken along line XXXXXX-XXXXXX shown in FIG. 57. FIG. 61 shows a cross section taken along line XXXXXXI-XXXXXXI shown in FIG. 57.

[0162] As shown in FIG. 57, a light emitting device 202 according to this embodiment includes a semiconductor laser device 201 according to this embodiment and a wavelength conversion element 50.

[0163] The semiconductor laser device 201 includes a plurality of semiconductor laser elements 10 and a plurality of first reflecting elements 230. In this embodiment, the semiconductor laser device 201 further includes a plurality of submounts 20.

[0164] Each of the semiconductor laser elements 10 has an optical waveguide 10W and an emission point 10e. Each of the semiconductor laser elements 10 emits laser light in the same manner as the semiconductor laser element 10 according to the first embodiment. Therefore, the semiconductor laser device 201 includes a plurality of emission points 10e each of which emits laser light. The laser light has a slow axis and a fast axis.

[0165] Each of the plurality of submounts 20 has the same configuration as the submount 20 according to the embodiment 1. On each of the plurality of submounts 20, one semiconductor laser device 10 is disposed.

[0166] Each of the plurality of first reflecting elements 230 has a reflecting surface 231 as shown in FIGS. 58 to 61. That is, the semiconductor laser device 201 according to this embodiment is provided with a plurality of reflecting surfaces 231. The semiconductor laser elements 10 and the reflecting surfaces 231 correspond one-to-one. That is, laser light emitted by one semiconductor laser element 10 is incident on one reflecting surface 231 corresponding to that semiconductor laser element 10. Each of the plurality of reflecting surfaces 231 reflects the laser light emitted by the corresponding semiconductor laser element 10. The reflecting surface 231 has a convex surface that protrudes toward the semiconductor laser element 10 (in other words, the optical waveguide 10W or the emission point 10e). In the example shown in FIGS. 57 to 61, the entire reflecting surface 231 is convex.

[0167] 59, the convex surface has a linear generatrix 231M located at the apex of the convex surface. The cross section of the convex surface perpendicular to the generatrix 231M at any position on the generatrix 231M has the same convex shape. A plane including a first optical axis Ax1, which is the optical axis of the laser light propagating from the semiconductor laser device 10 to the reflecting surface 231, and the fast axis of the laser light propagating from the semiconductor laser device 10 to the reflecting surface 231, is parallel to the generatrix 231M. As in the first embodiment, the generatrix 231M is inclined with respect to the first optical axis Ax1.

[0168] In the example shown in FIG. 57, the semiconductor laser device 201 includes six semiconductor laser elements 10, six submounts 20, and six first reflecting elements 230. Three of the semiconductor laser elements 10 are arranged in the X-axis direction in FIG. 57 and emit laser light in the positive direction of the Y-axis. The other three semiconductor laser elements 10 are arranged in the X-axis direction in FIG. 57 and emit laser light in the negative direction of the Y-axis. The emission points 10e of the three semiconductor laser elements 10 and the emission points 10e of the other three semiconductor laser elements 10 are arranged opposite to each other. In this embodiment, the slow axis direction of the laser light is parallel to the X-axis direction.

[0169] The six first reflecting elements 230 are arranged in two rows in the X-axis direction (i.e., the slow-axis direction of the laser light propagating along the first optical axis Ax1). That is, three first reflecting elements 230 are arranged in the X-axis direction, and three other first reflecting elements 230 are arranged in the X-axis direction parallel to the three first reflecting elements 230. Accordingly, a plurality of reflecting surfaces 231 and a plurality of generatrixes 231M are arranged in the X-axis direction.

[0170] The wavelength conversion element 50 of the light emitting device 202 is disposed above the two first reflecting elements 230 located in the center in the X-axis direction (that is, on the positive side in the Z-axis direction).

[0171] In this embodiment, laser light emitted from a plurality of semiconductor laser elements 10 is collected onto one wavelength conversion element 50. Therefore, the propagation direction of the laser light reflected by the reflecting surface 231 does not need to be parallel to the Z-axis direction.

[0172] For example, as shown in FIG. 59, in order to impart an X-axis component to the direction of the second optical axis Ax2 of the laser light reflected by the reflecting surface 231, the X-axis position of the generatrix 231M of the first reflecting element 230 is shifted in the negative X-axis direction from the first optical axis Ax1 of the corresponding semiconductor laser element 10. As a result, as shown in FIG. 59, a positive X-axis component can be imparted to the direction of the second optical axis Ax2 of the laser light. The amount of this shift may be, for example, approximately 0.04 mm. In this case, the direction of the second optical axis Ax2 in the ZX plane is tilted by 16° from the Z-axis direction. In this way, by shifting the generatrix 231M of the first reflecting element 230 corresponding to the wavelength conversion element 50, that is, the semiconductor laser element 10 located on the negative side of the X-axis direction from the irradiation surface 50S, in the negative X-axis direction with respect to the first optical axis Ax1, the laser light can be reflected by the first reflecting element 230 toward the irradiation surface 50S. Similarly, by shifting the generatrix 231M of the wavelength conversion element 50, that is, the first reflecting element 230 corresponding to the semiconductor laser element 10 located on the X-axis direction positive side of the irradiation surface 50S, in the X-axis direction positive direction with respect to the first optical axis Ax1, it is possible to reflect the laser light toward the irradiation surface 50S by the first reflecting element 230. As a result, as shown in Fig. 60 , it is possible to collect multiple laser light beams in the X-axis direction toward the irradiation surface 50S.

[0173] The pitch P of the arrangement of the plurality of busbars 231M shown in FIG. g is the pitch P of the array of the plurality of emission points 10e s Here, the pitch P of the arrangement of the plurality of bus bars 231M may be g The pitch P of the arrangement of the plurality of emission points 10e means the interval between two adjacent generatrixes 231M in the arrangement direction (i.e., the slow axis direction of the laser light propagating along the first optical axis Ax1) among the plurality of generatrixes 231M. s means the interval between two adjacent emission points 10e in the arrangement direction (i.e., the slow axis direction of the laser light) among the plurality of emission points 10e. In this embodiment, as shown in FIG. 57, the arrangement pitch P g is the pitch P of the array of the plurality of emission points 10e sAs a result, as described above, it is possible to collect a plurality of laser beams in the slow axis direction of the laser beams (i.e., the direction in which the plurality of emission points 10e and the plurality of generatrixes 231M are arranged). s is equal to the arrangement pitch of the multiple optical waveguides 10W. The pitch of the multiple optical waveguides 10W is defined, for example, as the distance from the center position of one optical waveguide 10W in the arrangement direction to the center position of another optical waveguide 10W adjacent to that optical waveguide 10W in the arrangement direction.

[0174] In this embodiment, in order to give a component in the X-axis direction to the propagation direction of the laser light reflected by the reflecting surface 231, as shown in FIG. 61, the angle θ m is not 45°. This provides a component in the Y-axis direction to the direction of the second optical axis Ax2 of the laser light reflected by the reflecting surface 231. In the example shown in FIG. 61, m is less than 45°. This allows the second optical axis Ax2 to have a Y-axis direction component pointing away from the semiconductor laser device 10. Therefore, as shown in FIG. 61, multiple laser beams can be focused on the irradiation surface 50S in the Y-axis direction.

[0175] [3-2. Variation 1] Modification 1 of the semiconductor laser device 201 and the light emitting device 202 according to this embodiment will be described with reference to Figs. 62 and 63. Figs. 62 and 63 are cross-sectional views showing the configuration of Modification 1 of the light emitting device 202 according to this embodiment. Fig. 62, like Fig. 60, shows a cross section passing through the wavelength conversion element 50 and the first reflecting element 230 and perpendicular to the Y-axis direction. Fig. 63, like Fig. 61, shows a cross section passing through the wavelength conversion element 50 and the first reflecting element 230 and perpendicular to the X-axis direction.

[0176] 62 and 63, the semiconductor laser device 201 and the light emitting device 202 of Modification 1 may include a second reflecting element 70. The second reflecting element 70 can homogenize the light intensity distribution on the irradiation surface 50S that is irradiated with the plurality of laser beams. In addition, the second reflecting element 70 can adjust the shape and size of the area on the irradiation surface 50S that is irradiated with the laser beams.

[0177] (Fourth embodiment) A semiconductor laser device and a light emitting device according to embodiment 4 will be described. The semiconductor laser device according to this embodiment differs from the semiconductor laser device 1 according to embodiment 1 mainly in that the semiconductor laser element has a plurality of emission points and the reflecting surface has a plurality of convex surfaces. The semiconductor laser device and the light emitting device according to this embodiment will be described below, focusing on the differences from embodiment 1.

[0178] [4-1. Overall structure and effects] The overall configuration of the semiconductor laser device and light emitting device according to this embodiment will be described with reference to FIGS. 64 to 67. FIG. 64 is a cross-sectional view showing the overall configuration of light emitting device 302 according to this embodiment. FIG. 64 shows a cross section perpendicular to the slow axis direction of laser light. FIG. 65 is a cross-sectional view showing the configuration of first reflecting element 330 according to this embodiment. FIG. 65 shows a cross section of first reflecting element 330 taken along line XXXXXXV-XXXXXXV shown in FIG. 64. FIG. 66 is a plan view showing the configuration of semiconductor laser device 310 and first reflecting element 330 according to this embodiment. FIG. 67 is a cross-sectional view of first reflecting element 330 and irradiation surface 50S according to this embodiment. FIG. 67 shows a cross section perpendicular to the Y-axis direction.

[0179] 64, a light emitting device 302 according to this embodiment includes a semiconductor laser device 301 and a wavelength conversion element 50. In this embodiment, the light emitting device 302 further includes a support member 52.

[0180] The semiconductor laser device 301 includes a semiconductor laser element 310 and a first reflecting element 330. In this embodiment, the semiconductor laser device 301 further includes a submount 20, a base 81, a frame 84, a lid 86, and a light-transmitting window 88.

[0181] As shown in FIG. 66, the semiconductor laser device 310 according to this embodiment is a semiconductor laser array device having a plurality of optical waveguides 10W and a plurality of emission points 10e. Laser light is emitted from each of the plurality of emission points 10e. In the example shown in FIG. 66, the semiconductor laser device 310 has three optical waveguides 10W and three emission points 10e. For example, the semiconductor laser device 310 has three ridges, and emits laser light from each emission point 10e located at the end of the ridge. The arrangement direction of the three emission points 10e is parallel to the slow axis direction of the laser light emitted from each emission point 10e. In other words, the plurality of optical waveguides 10W are arranged in the slow axis direction of the laser light propagating along the first optical axis Ax1. Furthermore, the plurality of emission points 10e are arranged in the slow axis direction of the laser light propagating along the first optical axis Ax1.

[0182] As shown in FIG. 65, the first reflecting element 330 according to this embodiment has a plate-like shape. The first reflecting element 30 has a base material 332 and a reflective film 34. The base material 332 is a plate-like member. The base material 332 is formed of, for example, glass. The base material 332 has two flange portions 32f and three protrusion portions 32p. The flange portion 32f is a portion having a flat plate-like shape. The protrusion portion 32p is located between the two flange portions 32f and has a portion that protrudes in a direction away from the first mirror placement surface S1. In this embodiment, the surface of the portion of the protrusion portion 32p that protrudes from the flange portion 32f includes a cylindrical surface.

[0183] The reflective film 34 is formed on the surface of the base material 332 and is a film that reflects laser light. The surface of the reflective film 34 has three reflective surfaces 31 and two flat surfaces 31b. The reflective film 34 is a metal film, a dielectric multilayer film, or the like. In the present embodiment, the first reflective element 330 has three reflective surfaces 31 arranged in the slow-axis direction of the laser light propagating along the first optical axis Ax1 and two flat surfaces 31b (see FIG. 64 for the first optical axis Ax1). The surface of the reflective film 34 formed on the protruding portion 32p of the base material 332 is the reflective surface 31. The reflective surface 31 has the same configuration as the reflective surface 31 in the first embodiment, etc. The surface of the reflective film 34 formed on the flange portion 32f is the flat surface 31b, which is a flat mirror. The flat surface 31b is adjacent to the reflective surface 31 in the X-axis direction (i.e., the slow-axis direction of the laser light) and is parallel to the generatrix 31M and the X-axis direction.

[0184] As shown in FIG. 66, the pitch P of the arrangement of the plurality of emission points 10e of the semiconductor laser element 310 is s is the pitch P of the arrangement of the plurality of busbars 31M of the first reflecting element 330. g is equal to.

[0185] Furthermore, the X-axis position of each emission point 10e is equal to the X-axis position of the generatrix 31M of the reflecting surface 31 corresponding to that emission point 10e. As a result, as shown in Figures 64 and 67, the laser light reflected by each reflecting surface 31 propagates parallel to the Z-axis direction. Note that the beam diameter WBS2 of the laser light in the slow axis direction on the reflecting surface 31 (i.e., twice the spot size) is determined by the pitch P of the arrangement of the multiple generatrix 31M. g This can reduce the proportion of stray light that does not enter the corresponding reflecting surface 31 in the laser light.

[0186] The above-mentioned pitches are, for example, 200 μm. When the distance d from the emission point 10e to the reflecting surface 31 is 0.5 mm, the divergence angle θ in the slow axis direction of the laser light immediately after being emitted from the semiconductor laser element 10 is s When the angle θ is 10°, the beam diameter WBS2 in the slow axis direction at the reflecting surface 31 is 87 μm. gIt can be made smaller.

[0187] As shown in FIG. 67, the spot size of each laser beam in the slow axis direction on the irradiation surface 50S is a s1 Then, the beam spots of the three laser beams are shifted in the X-axis direction. The combined spot size of the three laser beams is a s is the spot size of one laser beam a s1 Here, the combined spot size is the size of the combined beam spot defined by the envelope surrounding each beam spot of the three laser beams.

[0188] The semiconductor laser device 301 and light emitting device 302 according to this embodiment also achieve the same effects as the semiconductor laser device 1 and light emitting device 2 according to embodiment 1. Furthermore, the semiconductor laser device 301 according to this embodiment can realize a laser light source with higher power than the semiconductor laser device 1 according to embodiment 1, while suppressing an increase in the size of the entire device.

[0189] [4-2. Modifications] A modified example of semiconductor laser device 301 according to the present embodiment will be described with reference to Figs. 68 and 69. Fig. 68 is a plan view showing the configuration of semiconductor laser element 310 and first reflecting element 330 according to the modified example of the present embodiment. Fig. 69 is a cross-sectional view of first reflecting element 330 and irradiation surface 50S according to the modified example of the present embodiment. Fig. 69 shows a cross section perpendicular to the Y-axis direction.

[0190] As shown in FIG. 68, the arrangement pitch P of the plurality of generatrixes 31M in the first reflecting element 330 according to this embodiment is g is the pitch P of the arrangement of the plurality of emission points 10e of the semiconductor laser element 310. s 68, the position in the X-axis direction of the output point 10e located at the center in the X-axis direction among the three output points 10e may be equal to the position in the X-axis direction of the generatrix 31M located at the center in the X-axis direction among the three generatrix 31M.

[0191] The position in the X-axis direction of the generatrix 31M located at the X-axis negative end of the first reflecting element 330 is shifted in the negative X-axis direction from the emission point 10e of the corresponding semiconductor laser element 10. This allows a component in the positive X-axis direction to be imparted to the direction of the second optical axis Ax2 of the laser light.

[0192] The position in the X-axis direction of the generatrix 31M located at the X-axis positive end of the first reflecting element 330 is shifted in the positive direction in the X-axis direction from the emission point 10e of the corresponding semiconductor laser element 10. This allows a component in the negative direction in the X-axis direction to be imparted to the direction of the second optical axis Ax2 of the laser light.

[0193] 69, multiple laser beams can be focused in the X-axis direction toward the irradiation surface 50S. Therefore, the combined spot size a of the three laser beams is s is the composite spot size a shown in Figure 67. s It can be further reduced.

[0194] (Variations, etc.) Although the semiconductor laser device and the light emitting device according to the present disclosure have been described above based on the respective embodiments, the present disclosure is not limited to the above-described respective embodiments.

[0195] For example, in each of the above embodiments, the semiconductor laser device includes the submount 20, but the submount 20 may not be included.

[0196] Furthermore, the reflecting surface according to each of the above embodiments may be formed directly on the base or the like.

[0197] This disclosure also includes forms obtained by applying various modifications to the above-mentioned embodiments that a person skilled in the art would conceive, and forms realized by arbitrarily combining the components and functions of the above-mentioned embodiments within the scope of the present disclosure.

[0198] For example, the second reflecting element 70 according to the second embodiment may be applied to the semiconductor laser device 301 and the light emitting device 302 according to the fourth embodiment. [Industrial Applicability]

[0199] The semiconductor laser device and light emitting device of the present disclosure can be applied, for example, as a high-output, high-light-density light source for a projector. [Explanation of symbols]

[0200] 1, 101, 201, 301 Semiconductor laser device 2, 102, 202, 302 Light-emitting device 10, 310 Semiconductor laser element 10e Emission point 10W optical waveguide 20 Submount 21 First electrode 22 Second electrode 24 wire 30, 230, 330 First reflective element 31, 231 reflective surface 31b plane 31c slope 31M, 231M busbar 32, 332 base material 32f flange 32p protrusion 34 Reflective film 35 bottom 50 Wavelength conversion element 50S irradiation surface 52 Support member 52a, 70a, 86a opening 70 Second Reflective Element 70M reflective side 71 Reflective material 72 Plate-shaped members 74 Reflective film 76 Translucent material 81 base 82 Base board 84 frames 86 Lid 88 Translucent window 90 Laser base 98 Adhesive Ax1 First optical axis Ax2 2nd optical axis S0 placement surface S1 First mirror placement surface S2 Second mirror placement surface S3 concave

Claims

1. a semiconductor laser element that emits laser light; a reflecting surface that reflects the laser light, the laser light has a slow axis and a fast axis; the reflecting surface has a convex surface that protrudes toward the semiconductor laser element, the convex surface has a linear generatrix located at the apex of the convex surface; the shape of a cross section of the convex surface perpendicular to the generatrix at any position on the generatrix is ​​the same convex shape; a plane including a first optical axis, which is an optical axis of the laser light propagating from the semiconductor laser element to the reflecting surface, and the fast axis of the laser light propagating from the semiconductor laser element to the reflecting surface, is parallel to the generatrix; The generatrix is ​​inclined with respect to the first optical axis. Semiconductor laser device.

2. The generatrix is ​​inclined at 45 degrees with respect to the first optical axis.

2. The semiconductor laser device according to claim 1.

3. The convex surface has a shape symmetrical with respect to the generatrix.

3. The semiconductor laser device according to claim 1.

4. The convex surface includes a cylindrical surface.

4. The semiconductor laser device according to claim 1.

5. a first reflective element having the reflective surface; 4. The semiconductor laser device according to claim 1.

6. a reflecting side surface that reflects only a portion of the laser light reflected by the reflecting surface; 6. The semiconductor laser device according to claim 1.

7. The reflecting side surface is parallel to a second optical axis, which is the optical axis of the laser light reflected by the reflecting surface.

7. The semiconductor laser device according to claim 6.

8. The laser light reflected by the reflective side surface and the laser light not reflected by the reflective side surface overlap with each other.

8. The semiconductor laser device according to claim 6 or 7.

9. The reflective side surface is a first reflecting side surface perpendicular to the fast axis of the laser light propagating along the second optical axis; a second reflective side surface perpendicular to the slow axis of the laser light propagating along the second optical axis; 8. The semiconductor laser device according to claim 7.

10. The semiconductor laser element and the reflecting surface are hermetically sealed.

10. The semiconductor laser device according to claim 1.

11. a semiconductor laser element that emits laser light; a reflecting surface that reflects the laser light, the laser light has a slow axis and a fast axis; the reflecting surface has a convex surface that protrudes toward the semiconductor laser element, a cross section of the convex surface, which is parallel to a plane including a first optical axis that is an optical axis of the laser light propagating from the semiconductor laser element to the reflecting surface and the slow axis of the laser light propagating from the semiconductor laser element to the reflecting surface, has a convex shape that protrudes toward the semiconductor laser element, a cross section of the convex surface parallel to a plane including the first optical axis and the fast axis of the laser light propagating from the semiconductor laser element to the reflecting surface, the cross section being a straight line inclined with respect to the first optical axis; Semiconductor laser device.

12. an irradiation surface onto which the laser light reflected by the reflecting surface is irradiated, a ratio of a spot size of the laser light on the irradiation surface in the slow axis direction to a spot size of the laser light in the fast axis direction is 9 / 16 or more and 16 / 9 or less; 12. The semiconductor laser device according to claim 11.

13. The ratio is 1 / 1.2 or more and 1 / 1.2 or less.

13. The semiconductor laser device according to claim 12.

14. The semiconductor laser element is a multimode laser element.

14. The semiconductor laser device according to claim 1.

15. a plurality of emission points each emitting a laser beam; a plurality of reflecting surfaces each of which reflects the laser light; the laser light has a slow axis and a fast axis; each of the plurality of reflecting surfaces has a convex surface that protrudes toward a corresponding one of the plurality of emission points; the convex surface has a linear generatrix located at the apex of the convex surface; the shape of a cross section of the convex surface perpendicular to the generatrix at any position on the generatrix is ​​the same convex shape; a plane including a first optical axis, which is an optical axis of the laser light propagating from each of the plurality of emission points to a corresponding one of the plurality of reflection surfaces, and a fast axis of the laser light propagating along the first optical axis, is parallel to the generatrix; The generatrix is ​​inclined with respect to the first optical axis. Semiconductor laser device.

16. the plurality of emission points are arranged in a slow axis direction of the laser light propagating along the first optical axis, the plurality of generatrix lines are arranged in a slow axis direction of the laser light propagating along the first optical axis, The pitch of the arrangement of the plurality of generatrix lines is equal to or greater than the pitch of the arrangement of the plurality of emission points.

16. The semiconductor laser device according to claim 15.

17. The pitch of the arrangement of the plurality of generatrix lines is greater than the pitch of the arrangement of the plurality of emission points.

17. The semiconductor laser device according to claim 16.

18. The angle between the generatrix and the first optical axis is less than 45°.

18. The semiconductor laser device according to claim 1, wherein the first and second electrodes are arranged parallel to each other.

19. a semiconductor laser device according to any one of claims 1 to 14; a wavelength conversion element that is irradiated with the laser light reflected by the reflecting surface and converts the wavelength of at least a portion of the laser light; Light-emitting device.

Images