Semiconductor device

Abstract

To provide a semiconductor device which suppresses deterioration of a secondary battery.SOLUTION: A semiconductor device includes a secondary battery module and a first circuit. The secondary battery module includes a secondary battery and a sensor. The first circuit has a variable resistance. The sensor has a function of sensing the temperature of the secondary battery. The first circuit has a function of determining a charge voltage of the secondary battery and outputting a first result, a function of determining a temperature of the secondary battery detected by the sensor and outputting a second result, a function of determining the resistance of the variable resistor on the basis of the first result and the second result, a function of discharging the charge voltage through the variable resistor, and a function of stopping discharging when the charge voltage reaches a specified voltage.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a semiconductor device and a method for operating the semiconductor device. One aspect of the present invention is a secondary battery control circuit, a discharge control circuit, an abnormality detection circuit, a cell balancing control circuit, and a Control circuits, secondary battery control systems, battery management systems, and electronic devices do.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field relates to an article, a method, or a manufacturing method. is a process, machine, manufacture, or composition of matter. Therefore, one aspect of the present invention disclosed in this specification more specifically relates to The technical fields of the present invention include display devices, light-emitting devices, power storage devices, imaging devices, memory devices, and their driving Examples of the method include a method for operating the device and a method for manufacturing the device.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Therefore, semiconductor elements such as transistors and diodes and semiconductor circuits are semiconductors. The present invention is also applicable to display devices, light-emitting devices, lighting devices, electro-optical devices, electronic devices, etc. Therefore, the display device, the light emitting device, the lighting device, etc. may include a semiconductor element or a semiconductor circuit. Devices such as semiconductor devices, electro-optical devices, imaging devices, and electronic equipment may also be called semiconductor devices. . [Background technology]

[0004] In recent years, various types of energy storage devices have become available, including lithium-ion secondary batteries, lithium-ion capacitors, and air batteries. The development of lithium-ion batteries, which have high output and high energy density, is particularly active. Secondary batteries are used in mobile phones, smartphones, tablets, or laptops. mobile information terminals, game devices, portable music players, digital cameras, medical equipment, or Hybrid vehicles (HEV), electric vehicles (EV), or plug-in hybrid vehicles ( Next-generation clean energy vehicles such as PHEVs, electric motorcycles, etc. are expected to grow in line with the development of the semiconductor industry. At the same time, demand for it is rapidly expanding, and it is becoming increasingly important as a source of rechargeable energy in today's information society. It has become an indispensable part of

[0005] Patent Document 1 describes a structure that charges and discharges the battery with an appropriate power according to the usage environment and the state of the battery. The company discloses its results. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 11-187577 Summary of the Invention [Problem to be solved by the invention]

[0007] Lithium-ion secondary batteries will lose a lot of capacity if left in a high temperature environment. This tendency is such that the higher the charge rate (higher battery voltage), the greater the deterioration. In the configuration shown in Patent Document 1, the temperature of the secondary battery detected by the temperature detection means is When the temperature is above a certain level, the charge / discharge power is adjusted so as not to exceed the upper limit of the charge / discharge power according to the temperature. A charge / discharge control device for controlling the above is shown.

[0008] However, in order to manage secondary batteries that are left in a high-temperature state, a control processor is required. In addition, even when the electronic device is in a sleep state, the control processor can check the temperature of the secondary battery. Since the temperature and charging characteristics are managed, there is a problem that it is difficult to reduce power consumption.

[0009] One aspect of the present invention is to suppress deterioration of the battery capacity of a secondary battery that is left in a high-temperature state. Another object of the present invention is to provide a semiconductor device or the like that can An object of one embodiment is to provide a semiconductor device or the like that consumes less power. An object of one embodiment of the present invention is to provide a highly reliable semiconductor device or the like. Another embodiment of the present invention is to provide an electronic device or the like using the novel semiconductor device. This is one of the challenges.

[0010] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter will be self-evident from the description, drawings, claims, etc. It is possible to extract other issues from the drawings, claims, etc. [Means for solving the problem]

[0011] One embodiment of the present invention is a semiconductor device including a secondary battery module and a first circuit. The secondary battery module includes a secondary battery and a sensor. The first circuit includes a variable resistor. The sensor has a function of detecting the temperature of the secondary battery. The first circuit The function to determine the charging voltage and output the first result, and the function to determine the temperature of the secondary battery detected by the sensor and output the second result, and the size of the variable resistor based on the first and second results. The function to determine the charge voltage, the function to discharge the charge voltage through a variable resistor, and the function to determine the charge voltage when the charge voltage is specified. and a function of stopping discharge when a predetermined voltage is reached.

[0012] One embodiment of the present invention is a semiconductor device including a secondary battery module and a first circuit. The secondary battery module includes a secondary battery and a sensor. The sensor detects the temperature of the secondary battery. The first circuit has a function of detecting a second circuit and a third circuit. The circuit includes a lookup table, a first comparison circuit, and a second comparison circuit. The third circuit includes a discharge control circuit and a variable resistor. A first classification condition is provided for classifying the charging voltage of the battery into voltage ranges, and the temperature of the secondary battery is The first comparison circuit has a second classification condition for classifying the charging voltage of the secondary battery into a voltage range. The second comparison has a function of classifying the pressure according to the first classification condition and outputting it as the first result. The circuit has a function of classifying the temperature of the secondary battery according to a second classification condition and outputting the second result. The discharge control circuit controls the discharge from the secondary battery based on the first result and the second result. The function to determine whether power is needed, the function to determine the size of the variable resistor, and the function to charge via the variable resistor A function to discharge the charging voltage and a function to stop discharging when the charging voltage reaches a specified voltage. and

[0013] In the above configuration, the temperature range is outside the allowable temperature range when charging the secondary battery. is preferred.

[0014] In the above configuration, the temperature range includes a first temperature range and a second temperature range higher than the first temperature range. and a temperature range. The first circuit detects that the amount of discharge from the secondary battery in the second temperature range is It is preferable to control the discharge amount so that it is greater than the discharge amount from the secondary battery in the first temperature range. It's nice.

[0015] In the above configuration, the first circuit has a first memory and a second memory, and the first memory The first memory stores the temperature determination conditions of the secondary battery, and the second memory stores the charging voltage determination conditions of the secondary battery. It can be retained.

[0016] In the above configuration, the first memory and the second memory each include a transistor and a capacitor. The transistor preferably has a metal oxide in the semiconductor layer. [Effects of the Invention]

[0017] One aspect of the present invention is to suppress deterioration of the battery capacity of a secondary battery that is left in a high-temperature state. Another embodiment of the present invention is to provide a semiconductor device or the like that can A semiconductor device or the like that consumes less power can be provided. In addition, a highly reliable semiconductor device or the like can be provided. It is possible to provide electronic devices and the like using the novel semiconductor device.

[0018] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have all of these effects. Effects other than these may be included in the description. The above is self-evident from the description, drawings, claims, etc. From the above descriptions, it is possible to extract other effects. [Brief explanation of the drawings]

[0019] [Figure 1] FIG. 1 is a diagram illustrating a secondary battery control circuit. [Figure 2] FIG. 2 is a diagram illustrating the secondary battery control circuit. [Figure 3] FIG. 3 is a circuit diagram illustrating the secondary battery control circuit. [Figure 4] FIG. 4 is a diagram illustrating an example of the operation of the secondary battery control circuit. [Figure 5] FIG. 5 is a diagram illustrating the secondary battery control circuit. [Figure 6] 6A and 6B are circuit diagrams illustrating the memory. [Figure 7] Fig. 7A is a diagram illustrating an external view of a coin-type secondary battery, Fig. 7B is a diagram illustrating a cross-sectional view of the coin-type secondary battery, and Fig. 7C is a diagram illustrating the flow of current in the secondary battery. [Figure 8] Fig. 8A is a diagram illustrating an external view of a cylindrical secondary battery, Fig. 8B is a diagram illustrating a cross-sectional view of a cylindrical secondary battery, Fig. 8C is a diagram illustrating a secondary battery module, and Fig. 8D is a diagram illustrating a top view of the secondary battery module. [Figure 9] 9A and 9B are diagrams illustrating the appearance of a secondary battery. [Figure 10] 10A, 10B, 10C, and 10D are diagrams illustrating examples of secondary batteries. [Figure 11] 11A and 11B are diagrams illustrating the configuration of a secondary battery. [Figure 12] FIG. 12 is a diagram illustrating the structure (wound body) of the secondary battery. [Figure 13] 13A, 13B, and 13C are diagrams illustrating a laminated secondary battery. [Figure 14] 14A and 14B are diagrams illustrating a laminated secondary battery. [Figure 15] FIG. 15 is a diagram showing the appearance of a secondary battery. [Figure 16] FIG. 16 is a diagram showing the appearance of a secondary battery. [Figure 17] 17A, 17B, and 17C are diagrams for explaining a method for manufacturing a secondary battery. [Figure 18] Fig. 18A is a diagram illustrating a top view of a bendable secondary battery. Figs. 18B, 18C, and 18D are diagrams illustrating cross-sectional views of the bendable secondary battery. Fig. 18E is a diagram illustrating a cross-sectional view of the secondary battery when bent. [Figure 19] 19A and 19B are diagrams illustrating a bendable secondary battery. [Figure 20] 20A to 20H are diagrams illustrating an example of an electronic device. [Figure 21] 21A to 21C are diagrams illustrating an example of an electronic device. [Figure 22] FIG. 22 is a diagram illustrating an example of an electronic device. [Figure 23] 23A to 23C are diagrams illustrating an example of a vehicle. [Figure 24] FIG. 24 is a diagram illustrating a configuration example of a semiconductor device. [Figure 25] FIG. 25 is a diagram illustrating a configuration example of a semiconductor device. [Figure 26] 26A to 26C illustrate structural examples of transistors. [Figure 27] 27A and 27B are diagrams illustrating examples of the structure of a transistor. [Figure 28] FIG. 28 is a diagram illustrating a configuration example of a semiconductor device. [Figure 29] 29A and 29B are diagrams illustrating examples of the structure of a transistor. [Figure 30] FIG. 30 is a diagram illustrating a configuration example of a semiconductor device. DETAILED DESCRIPTION OF THE INVENTION

[0020] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above, and various modifications and variations in form and detail may be made without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be modified as follows. It should not be construed as being limited to the description of the embodiment. In the configuration, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings. These are commonly used and their repeated explanations will be omitted.

[0021] In addition, the position, size, range, etc. of each component shown in the drawings etc. are to be clearly indicated in order to facilitate understanding of the invention. Therefore, the actual location, size, range, etc. may not be shown. The invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings, etc. For example, in the actual manufacturing process, resist masks and other materials may be damaged unintentionally by etching or other processes. However, this may not be reflected in the diagram to make it easier to understand.

[0022] Also, in top views (also called "plan views") and perspective views, etc., the drawings are easy to understand. Therefore, descriptions of some components may be omitted.

[0023] In addition, the terms "electrode" and "wiring" used in this specification and the like refer to these components functionally. This is not a limitation. For example, an "electrode" may be used as part of a "wiring." , and vice versa. Furthermore, the terms "electrode" and "wiring" may be used interchangeably with "electrodes" and "wiring." This also includes cases where "wiring" is formed as a single unit. The term "wiring" also includes cases where resistors are included.

[0024] In this specification, the resistance value of the "resistance" may be determined by the length of the wiring. Alternatively, a conductive layer used for wiring and a conductive layer having a different resistivity from the conductive layer may be used. Resistance may be formed by connecting through contacts. The resistance value may be determined by doping the pure material.

[0025] In this specification, a "terminal" in an electric circuit is a terminal that is used to input a current or a charging voltage. The part where pressure is input or output and / or signals are received or transmitted. Therefore, a part of the wiring or electrode may function as a terminal.

[0026] In this specification, the terms "above" and "below" refer to the positional relationship of components directly above or below each other. It is not limited to being directly under and in direct contact with the insulating layer A. If the expression is "electrode B", electrode B does not need to be formed directly on insulating layer A, This does not exclude the inclusion of other components between the insulating layer A and the electrode B.

[0027] The source and drain functions may also be different when using transistors with different polarities. When the direction of current changes during circuit operation, they may be interchanged depending on the operating conditions. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain can be used interchangeably. It shall be.

[0028] In addition, in this specification, "electrically connected" refers to a direct connection and a connection without any This includes cases where the device is connected via "something that has an electrical effect." "Something with an electrical effect" means something that enables the transmission and reception of electrical signals between connected objects. Therefore, even if it is expressed as "electrically connected", However, in real circuits, there may be cases where there are no physical connections and only wires are extended. In addition, "direct connection" refers to a connection where wiring formed by different conductive layers is connected via a contact. This includes cases where the two or more wirings are connected together and function as a single wiring.

[0029] In this specification, "parallel" means that two lines are at an angle of -10° to 10°. This means that the angle between -5° and 5° is included. Also, "perpendicular" and "orthogonal" mean, for example, that two straight lines are at an angle of 80° to 100°. This means that the angle between 85° and 95° is included. It can be enjoyed.

[0030] In this specification and elsewhere, counting values ​​and measurement values ​​are referred to as "the same," "the same," "etc." When we say "good" or "uniform," we mean plus or minus 2 unless otherwise specified. It is assumed that there is a 0% margin of error.

[0031] In this specification, when etching is performed after forming a resist mask, Unless otherwise specified, the resist mask is removed after the etching process is completed. do.

[0032] Also, a voltage is a potential between a certain potential and a reference potential (for example, a ground potential or a source potential). Therefore, voltage and potential can be used interchangeably. In this specification and the like, unless otherwise specified, the terms voltage and potential can be interchanged. This shall be the case.

[0033] Even when written as "semiconductor," if the conductivity is sufficiently low, it may be called an "insulator." Therefore, it is possible to use "semiconductor" instead of "insulator." In this case, the boundary between "semiconductor" and "insulator" is vague, and it is difficult to make a strict distinction between the two. Therefore, the terms "semiconductor" and "insulator" in this specification can be read interchangeably. It may be possible.

[0034] Also, even if a material is written as a "semiconductor," if the material has a sufficiently high conductivity, it may be written as a "conductor." Therefore, it is possible to use "semiconductor" instead of "conductor." In this case, the boundary between "semiconductor" and "conductor" is vague, and it is difficult to make a strict distinction between the two. Therefore, the terms "semiconductor" and "conductor" in this specification can be read interchangeably. It may be possible.

[0035] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. It does not indicate any order or ranking, such as the order of processes or stacking. In addition, even if a term is not accompanied by an ordinal number in this specification, etc., it is not a misreading of the constituent elements. To avoid confusion, ordinal numbers may be used in the claims. Even if a term has an ordinal number in the above example, a different ordinal number may be used in the claims. In addition, even if a term is accompanied by an ordinal number in this specification, In some cases, ordinal numbers may be omitted in patent claims, etc.

[0036] In this specification, the "on state" of a transistor refers to the state where the source of the transistor is This refers to a state in which the drain and the gate are considered to be electrically short-circuited (also called the "conducting state"). The "off state" of a transistor means that the source and drain of the transistor are electrically isolated. This refers to a state in which the circuit can be considered disconnected (also called a "non-conducting state").

[0037] In this specification, the term "on-state current" refers to the amount of current that flows through the source when a transistor is in an on-state. The term "off-state current" may refer to the current that flows between the gate and drain of a transistor. It may refer to the current that flows between the source and drain when the device is in the off state.

[0038] In this specification and the like, a high power supply potential VDD (hereinafter simply referred to as "VDD" or "H potential") ") refers to a power supply potential that is higher than the low power supply potential VSS. The potential VSS (hereinafter simply referred to as "VSS" or "L potential") is the potential higher than the high power supply potential VDD. Also, the ground potential can be used as VDD or VSS. For example, if VDD is at ground potential, VSS is at a potential lower than ground potential, If VSS is at ground potential, VDD is at a potential higher than ground potential.

[0039] In this specification, the term "gate" refers to a gate electrode and a part or all of a gate wiring. The gate wiring is the part that is connected to the gate electrode of at least one transistor and another This refers to wiring that electrically connects electrodes or other wiring.

[0040] In this specification, the source includes a source region, a source electrode, and a source wiring. The source region is the part of the semiconductor layer where the resistivity is below a certain value. The source electrode refers to the conductive layer connected to the source region. The source wiring is a wiring that connects the source electrode of at least one transistor with another electrode or another wiring. This refers to wiring that electrically connects wires.

[0041] In this specification, the drain includes a drain region, a drain electrode, and a drain electrode. The drain region is a part or all of the semiconductor layer with a resistivity of The drain electrode is the conductive part connected to the drain region. The drain wiring is the layer that is connected to the drain electrode of at least one transistor. , refers to wiring for electrically connecting to another electrode or another wiring.

[0042] (Embodiment 1) A semiconductor device of one embodiment of the present invention will be described with reference to FIGS. The device will be described as a secondary battery control circuit. Also, when referring to a secondary battery, it refers to a lead-acid battery. , lithium ion secondary battery, lithium ion polymer secondary battery, nickel metal hydride battery, Nickel-cadmium storage battery, nickel-iron storage battery, nickel-zinc storage battery, silver-zinc oxide storage battery, Cobalt-titanium lithium-ion secondary batteries, sodium-ion batteries, all-solid-state batteries, etc. .

[0043] For example, in an all-solid-state battery, an inorganic solid electrolyte can be used for the solid electrolyte layer. As the organic solid electrolyte, a sulfide-based solid electrolyte or an oxide-based solid electrolyte can be used.

[0044] Examples of sulfide-based solid electrolytes include Li2S-SiS2-Li3PO4, Li2S -P2S5, Li2S-SiS2-Ga2S3, LiI-Li2S-P2S5, LiI- Li2S-B2S3, LiI-Li2S-SiS2, Li3PO4-Li2S-SiS2 and lithium composite sulfide materials such as Li4SiO4-Li2S-SiS2.

[0045] In addition, oxide-based solid electrolytes include LiPON, Li2O, Li2CO3, and Li2M oO4, Li3PO4, Li3VO4, Li4SiO4, LLT(La 2 / 3-x Li3 x TiO3), LLZ(Li7La3Zr2O 12 ) and other lithium composite oxides and oxides Lithium materials are included.

[0046] In addition, as a solid electrolyte, PEO (polyethylene oxide) formed by coating method, etc. Furthermore, the above-mentioned inorganic solid electrolyte and polymer solid electrolyte may be used. A composite solid electrolyte containing a solid electrolyte may also be used.

[0047] A secondary battery control circuit according to one aspect of the present invention includes a secondary battery module and a first circuit. The first circuit has a second circuit and a third circuit. The cooling fan includes a secondary battery and a sensor that detects the temperature of the secondary battery.

[0048] The second circuit is a first comparison circuit that can classify the charging voltage of the secondary battery by voltage range. a second comparison circuit capable of classifying the temperature of the secondary battery into a temperature range; and a look-up The look-up table includes a table for calculating the charging voltage of the secondary battery for each voltage range. The first classification condition is for classifying the temperature of the secondary battery into temperature ranges. The classification conditions are as follows:

[0049] The third circuit has a discharge control circuit. The discharge control circuit determines the first classification condition and the second classification condition. The magnitude of the resistance used during the discharge period of the secondary battery is controlled according to the classification conditions.

[0050] The second circuit detects the temperature of the secondary battery by a sensor and calculates the detected temperature within a temperature range. The function to classify by voltage range and to detect the charging voltage of the secondary battery. In addition, the charging voltage of the secondary battery is classified according to the first classification condition and the first result is obtained. The temperature of the secondary battery can be determined by the second classification condition. The second result can be classified and provided to a third circuit.

[0051] The third circuit uses the first result and the second result to determine whether discharge from the secondary battery is necessary. a function for determining the magnitude of the resistance for discharging the secondary battery; and stop discharging when the secondary battery's charging voltage reaches a specified voltage. It also has the function of stopping the

[0052] The above-mentioned temperature range is set when the temperature of the secondary battery is outside the allowable temperature range during charging of the secondary battery. First, the allowable temperature range of the secondary battery will be briefly explained. For example, when charging at low temperatures, the battery reaction cannot keep up, causing lithium to precipitate on the electrode surface, leading to deterioration and failure. It is known that this can cause problems and accidents. In addition, when charging at high temperatures, the viscosity of the electrolyte It is known that the Brownian motion of lithium ions is activated as the temperature decreases. It is known that the reaction rate of lithium ions increases, resulting in an increase in side reactions in secondary batteries. When a secondary battery is fully charged, a large amount of lithium is released from the positive electrode active material, causing heat The stability is relatively low compared to secondary batteries within the allowable temperature range, and positive There is concern about the deterioration of the electrode active material. In addition, the positive electrode voltage is high in the fully charged state, so the electrolytic The oxidation reaction of the electrolyte is promoted, and the reduction reaction of the electrolyte is promoted because the negative electrode voltage is low. Therefore, when the secondary battery is fully charged and in a temperature environment higher than the secondary battery's guaranteed If the battery is left under the temperature, the voltage of the secondary battery will rise and the secondary battery will be overcharged, causing deterioration. For example, if a fully charged secondary battery is left on the dashboard of a car, Examples include ``go''.

[0053] A secondary battery control circuit according to one embodiment of the present invention is configured to: If the device is left in a temperature environment higher than the guaranteed upper temperature limit, the discharge control circuit detects the temperature The magnitude of the resistance for discharging from the secondary battery can be changed depending on the temperature. When the temperature of the battery rises slowly or suddenly, It should be noted that if the temperature of the secondary battery rises suddenly, it can be discharged. Since the battery will be rapidly overcharged, it is necessary to reduce the resistance value to increase the discharge current. It is preferable that the above-mentioned conditions include a state in which the charging voltage of the secondary battery is less than the fully charged state. However, if the secondary battery is left in a high-temperature environment, the charging voltage of the secondary battery may drop below the full charge level. This also includes cases where the voltage rises above the specified value.

[0054] In addition, electronic equipment equipped with a secondary battery module controlled by a secondary battery control circuit is installed in a vehicle. Electronic devices are often in a dormant state when left on a board. For example, electronic devices in hibernation mode have their control processors inactive to reduce power consumption. However, in order to manage secondary batteries that are left in a high-temperature state, a control process is required. The secondary battery control circuit according to one aspect of the present invention is configured to detect the temperature of the secondary battery and the The charging voltage and can be managed without the need for a control processor. Even when the electronic device is in a sleep state, the secondary battery control circuit monitors the temperature and charging characteristics of the secondary battery. Therefore, the secondary battery control circuit can suppress deterioration of the secondary battery. The secondary battery control circuit can be used in a secondary battery control system or a battery management system. This can also be called a client system.

[0055] Next, the secondary battery control circuit will be described with reference to the drawings. 1 is a diagram illustrating an example of a secondary battery control circuit. The circuit 10 includes a circuit 20 and a circuit 30. The circuit 20 includes a circuit 21 and a circuit 22. The circuit 30 includes a circuit 31, a circuit 32, and a switch 33. The battery module 40 includes a secondary battery 41 and a sensor 42 for detecting the temperature of the secondary battery 41. , and a resistor 43. The resistor 43 functions as a shunt resistor.

[0056] The circuit 21 has a first comparison circuit that classifies the charging voltage of the secondary battery 41 into voltage ranges. The circuit 22 has a second comparison circuit that classifies the temperature of the secondary battery 41 into temperature ranges. The circuit 10 has a look-up table. The look-up table stores the voltage of the secondary battery 41. A first classification condition for classifying the charging voltage into a voltage range and a temperature range for the secondary battery 41. and a second classification condition for classifying the first and second classification conditions. It is preferable that the memory is a memory that stores the items as data. Alternatively, it is preferable that the memory is a lookup table. The lookup table may be distributed to the circuit 21 and the circuit 22. The data can be updated by a control processor or the like.

[0057] It is preferable that the lookup table uses a memory to store the data. The transistors used in memory have a type of metal oxide in the semiconductor layer where the channel is formed. A transistor using an oxide semiconductor (also called an "OS transistor") is used. It is preferable that the OS transistor has an extremely small off-state current. The off-current per 1 μm of channel width is 1×10 at room temperature. -20 Less than A, preferred Or 1 x 10 -22 A, more preferably less than 1 × 10 -24 A can be less than do.

[0058] Furthermore, the off-state current of an OS transistor hardly increases even in a high-temperature environment. The off-state current hardly increases even at ambient temperatures above room temperature and below 200°C. By using OS transistors as the constituent transistors, operation can be ensured even in high-temperature environments. A stable and highly reliable semiconductor device can be realized.

[0059] The OS memory using OS transistors as memory elements will be explained in detail in FIG. 6. However, memory is not limited to OS memory. For example, memory can be SRAM (Static Random Access Memory). tic Random Access Memory), DRAM (Dynamic R Access Memory, Non-Volatile Memory The nonvolatile memory can be a mask ROM (R ead on Memory, PROM (Programmable ROM), EPRO M(Erasable Programmable Read Only Memory ), EEPROM (Electrically Erasable Program ble Read-Only Memory), Flash Memory ory), MRAM (Magnetoresistive Random Access Memory), ReRAM (Resistive random access m memory), FeRAM(Ferroelectric Random Access Memory) can be used.

[0060] The circuit 21 can detect the charging voltage of the secondary battery 41. It is then possible to determine whether the charging voltage falls within any of the set voltage ranges. That is, the circuit 21 classifies the charging voltage of the secondary battery 41 according to the first classification condition. The result can be provided as a first result to the circuit 31. The detector may be affected by temperature-related noise. It is preferred to have a cis effect.

[0061] The circuit 22 uses information from the sensor 42 of the secondary battery module 40 to The circuit 22 can detect the temperature of the heater 41. The circuit 22 can also convert the detected temperature into a preset temperature. In other words, the circuit 22 can determine whether the secondary battery 4 is within one of the temperature ranges. The temperature of the first temperature is classified according to the second classification condition, and the classification result is sent to the circuit 31 as the second result. Electronic devices placed in high-temperature environments are susceptible to noise caused by temperature. Therefore, it is preferable that the circuit 22 has a hysteresis effect.

[0062] The circuit 31 uses the first and second results described above to determine the discharge current from the secondary battery 41. The circuit 31 can determine whether the first classification condition and the second classification condition are necessary. The magnitude of the resistance to be used during the discharge period of the secondary battery 41 can be determined depending on the conditions. If the temperature of the secondary battery 41 is not classified into any of the set temperature ranges, the circuit 3 1 provides a setting to stop discharging from the secondary battery 41 to the circuit 32 and the switch 33. In addition, the charging voltage of the secondary battery 41 is classified into any of the voltage ranges of the set charging voltage. If not, the circuit 31 sets the circuit 32 and the switch 33 to stop discharging from the secondary battery 41. Give it to Tch33.

[0063] The circuit 32 includes a discharge control circuit, which includes a variable resistor. By setting the variable resistor to the resistance determined by the circuit 31, the discharge current from the secondary battery is reduced. In other words, the discharge control circuit can control the amount of current used during the period when the secondary battery is discharging. The circuit 30 controls the magnitude of the variable resistor of the discharge control circuit. When the switch 33 is turned on, the secondary battery 41 starts discharging. When the charging voltage of the secondary battery 41 drops to a specified voltage due to discharge from the battery 41 The switch 33 is turned off by the setting to stop the discharge from the circuit 31. When the switch 33 is turned off, discharging from the secondary battery 41 is stopped. It is preferable that an OS transistor is used for the switch 33. By using a transistor, power consumption is reduced when the secondary battery control circuit is not in operation.

[0064] 2, the configuration of the circuit 10 will be described in detail as an example. In FIG. 2, the differences from FIG. and in the structure of the invention (or the structure of the embodiment), the same parts or similar functions are described. The same reference numerals are used in different drawings for parts having the same function, and repeated explanations thereof are omitted. Abbreviated.

[0065] First, the circuit 21 capable of detecting the charging voltage of the secondary battery 41 will be described in detail. The circuit 21 includes a comparison circuit 50a, a memory 50b, a resistor RS1, and a resistor RS2. The comparison circuit 50a has a first input terminal, a second input terminal, and an output terminal. , preferably part of a look-up table.

[0066] The charging voltage of the secondary battery 41 is divided by resistors RS1 and RS2. By doing so, it is possible to detect the first detected voltage of the secondary battery. The first detection voltage is applied to the first input terminal of the comparator circuit 50a, and the second input terminal of the comparator circuit 50b is The first classification condition stored in the memory 50b is given to the comparison circuit 50a. If the detected voltage of the first classification condition is greater than the first classification condition, the output terminal of the comparison circuit 50a outputs a judgment signal. As a result, a signal of "H" can be provided to the circuit 31. If the first detection voltage is smaller than the first classification condition, a signal is output from the output terminal of the comparison circuit 50a. Therefore, a signal of "L" can be provided to the circuit 31 as a judgment result. The signal applied to the output terminal of a corresponds to the first result.

[0067] Next, the circuit 22 capable of detecting the temperature of the secondary battery 41 will be described in detail. 2 has a comparison circuit 60a and a memory 60b. The comparison circuit 60a has a first input terminal, a second input terminal, The memory 60b has two input terminals and two output terminals. The memory 60b is part of a look-up table. It is preferable.

[0068] The sensor 42 included in the secondary battery module 40 detects the secondary battery The temperature of the pond 41 can be converted into a second detection voltage. The second detection voltage is applied to the second input terminal of the comparison circuit 60a, and the memory The comparison circuit 60a receives the second classification condition held in the comparison circuit 60b. If the voltage is greater than the second classification condition, the output terminal of the comparison circuit 60a outputs the result of the determination. The comparison circuit 60a can provide a high-level signal to the circuit 31. If the detected voltage is smaller than the first classification condition, the output terminal of the comparison circuit 60a outputs a judgment result. As a result, a signal of "L" can be given to the circuit 31. The signal given to the child corresponds to the second result.

[0069] Next, the circuit 31 will be described in detail. The circuit 31 is configured to perform the first and second calculations described above. The result can be used to determine whether discharge from the secondary battery 41 is necessary. The result of the determination can be provided as a determination signal. The circuit 31 preferably has the function of: the first result is a signal of "H" and the second result is If the result is a signal of "H", a signal of "H" can be given to the switch 33 as a judgment signal. The determination signal can turn on the switch 33. The secondary battery 41 The discharge is started when the switch 33 is turned on. A determination signal can be given to

[0070] The circuit 32 has a discharge control circuit, which functions as a variable resistor VR. During the period when the secondary battery 41 is discharging, the amount of discharge from the secondary battery 41 is controlled by the variable resistor VR. If the temperature of the secondary battery 41 does not fall into any of the set temperature ranges, the circuit 31 sends a determination signal to a circuit 32 and a switch 33 to stop discharging from the secondary battery 41. In addition, the charging voltage of the secondary battery 41 is set so as to fall within any of the voltage ranges of the charging voltage. If the battery is not classified, the circuit 31 sends a determination signal to the circuit 32 and the circuit 33 to stop discharging from the secondary battery. and applied to switch 33.

[0071] When the charging voltage of the secondary battery 41 drops to a specified voltage due to discharge from the secondary battery 41, In this case, the switch 33 receives a judgment signal from the circuit 31 to stop the discharge. When the switch 33 is turned off, the discharge from the secondary battery 41 stops. It is preferable that the switch 33 be an OS transistor.

[0072] FIG. 3 is a circuit diagram for explaining FIG. 2 in detail as an example. In FIG. 3, the differences from FIG. 2 are as follows: and in the structure of the invention (or the structure of the embodiment), the same parts or similar functions are described. The same reference numerals are used in different drawings for parts having the same function, and repeated explanations thereof are omitted. Abbreviated.

[0073] In FIG. 3, the circuit 10A includes the circuit 21A, the circuit 22A, the circuit 31A, the circuit 32A, and the switch As an example, the lookup table in circuit 10A may include three different It has three classification conditions.

[0074] First, the circuit 21A capable of detecting the charging voltage of the secondary battery 41 will be described in detail. The circuit 21A includes a comparison circuit 51a, a comparison circuit 52a, a comparison circuit 53a, a memory 51b, a memory The comparison circuits 51a to 51b include a resistor 52b, a memory 53b, a resistor RS1, and a resistor RS2. 53a each have a first input terminal, a second input terminal, and an output terminal. Preferably, 51b to 53b are part of a look-up table.

[0075] Next, the circuit 22A capable of detecting the temperature of the secondary battery 41 will be described in detail. 22A includes a comparison circuit 61a, a comparison circuit 62a, a comparison circuit 63a, a memory 61b, a memory 6 The comparison circuits 61a to 63a each have a first input 2b and a memory 63b. The memories 61b to 63b have a terminal, a second input terminal, and an output terminal. Preferably, it is part of the top table.

[0076] Next, the circuit 31A will be described in detail. The circuit 31A includes a circuit 31a, a circuit 31b, and The circuit 31a and the circuit 31b each have a first input terminal, a second input terminal, and a third input terminal. The circuit 31c has a first input terminal, a third input terminal, and an output terminal. The circuit 31a has a first input terminal, a second input terminal, and an output terminal. The output terminals of the circuits 1b and 31c are called output terminal B, output terminal C, and output terminal D. There may be cases where this is explained in a different way.

[0077] The circuit 32A includes a resistor R1, a resistor R2, a resistor R3, a switch 32a, and a switch 32b. The switches 33, 32a, and 32b are transistors. Alternatively, the switch 33, the switch 32a, and the switch More preferably, 32b is an OS transistor.

[0078] One of the electrodes of the secondary battery 41 is electrically connected to one of the electrodes of the resistor RS1 and one of the electrodes of the resistor R1. The other electrode of the resistor RS1 is electrically connected to one electrode of the resistor RS2 and the comparator circuit 5. a first input terminal of the comparator circuit 51a, a first input terminal of the comparator circuit 52a, and a first input terminal of the comparator circuit 53a. The other electrode of the resistor RS2 is electrically connected to one of the electrodes of the resistor 43. The other electrode of the resistor 43 is electrically connected to the other electrode of the secondary battery 41. However, the other electrode of the resistor RS2 is preferably connected to the other electrode of the secondary battery 41. The memory 51b may be electrically connected to the second input terminal of the comparison circuit 51a. The memory 52b is electrically connected to the second input terminal of the comparison circuit 52a. The memory 53b is electrically connected to the second input terminal of the comparison circuit 53a.

[0079] The sensor 42 is connected to a first input terminal of the comparison circuit 61a, a first input terminal of the comparison circuit 62a, and a first input terminal of the comparison circuit 63a. The memory 62b is electrically connected to the second input terminal of the comparison circuit 62a. The memory 63b is electrically connected to the second input terminal of the comparator circuit 63a. and electrically connected to each other.

[0080] The output terminal of the comparison circuit 53a is electrically connected to the first input terminal of the circuit 31c. The output terminal of the comparison circuit 63a is electrically connected to the second input terminal of the circuit 31c. The output terminal of the circuit 1c is electrically connected to the third input terminal of the circuit 31b and the gate of the switch 33. To be continued.

[0081] The output terminal of the comparison circuit 52a is electrically connected to the first input terminal of the circuit 31b. The output terminal of the comparison circuit 62a is electrically connected to the second input terminal of the circuit 31b. The output terminal of the switch 31b is electrically connected to the third input terminal of the circuit 31a and to the gate of the switch 32b. Connected.

[0082] The output terminal of the comparison circuit 51a is electrically connected to the first input terminal of the circuit 31a. The output terminal of the comparison circuit 61a is electrically connected to the second input terminal of the circuit 31a. The output terminal of 1a is electrically connected to the gate of switch 32a.

[0083] The other electrode of resistor R1 is connected to one electrode of resistor R2 and the source or drain of switch 32a. The other electrode of resistor R2 is electrically connected to one of the electrodes of resistor R3. , is electrically connected to one of the source and drain of the switch 32b. The other of the source or drain of the switch 32a is connected to the other of the source or drain of the resistor R 3 and one of the source and drain of the switch 33. The other of the source and drain of the switch 33 is electrically connected to one of the electrodes of the resistor 43. To be continued.

[0084] Next, the operation of the circuit 21A will be described. is divided by resistors RS1 and RS2 to obtain the first detection voltage of the secondary battery 41. The first detection voltage is input to the first input terminal of the comparison circuit 51a, The signal is supplied to a first input terminal of the comparison circuit 52a and a first input terminal of the comparison circuit 53a. A second terminal of 51a is provided with the first classification condition stored in memory 51b. A second terminal of the circuit 52a is supplied with a third classification condition held in the memory 52b. A second terminal of the comparison circuit 53a is provided with a fifth classification condition stored in the memory 53b. do.

[0085] That is, the circuit 21A classifies the detected voltage of the secondary battery 41 into the first classification condition, the third classification condition, and the or the fifth classification condition, the first classification range, the third classification range, or the fifth classification range. As an example, the first classification range is stored in the memory 51b. The third classification range is the voltage stored in the memory 52b. The fifth classification is when the voltage is greater than the voltage stored in memory 51b and less than the voltage stored in memory 51b. The range is greater than the voltage stored in memory 53b and less than the voltage stored in memory 52b. In addition, if the voltage is smaller than the voltage stored in the memory 53b, is not classified in the first, third, or fifth classification range .

[0086] For example, if the signal is classified into the first classification range, the output terminal of the comparison circuit 51a receives a judgment signal As a result, a signal of "H" is given. If the signal is not classified into the first classification range, the comparison circuit 5 The output terminal of the comparison circuit 51a receives a signal of "L" as a result of the determination. The signal provided at the output terminal of corresponds to the first result.

[0087] For example, if the signal is classified into the third classification range, the output terminal of the comparison circuit 52a receives the judgment signal As a result, a signal of "H" is given. If the signal is not classified into the third classification range, the comparison circuit 5 The output terminal of the comparison circuit 52a receives a signal of "L" as a result of the determination. The signal provided at the output terminal of corresponds to the third result.

[0088] For example, if the signal is classified into the fifth classification range, the output terminal of the comparison circuit 53a receives the judgment signal As a result, a signal of "H" is given. If the signal is not classified into the fifth classification range, the comparison circuit 5 The output terminal of the comparison circuit 53a receives a signal of "L" as a result of the determination. The signal provided to the output terminal of corresponds to the fifth result.

[0089] If it is not classified in the first, third, or fifth classification range, a comparison The output terminals of the circuit 51a and the comparator circuit 53a are supplied with a signal of "L" as a result of the determination. .

[0090] Next, the operation of the circuit 22A will be described. 42 converts the temperature of the secondary battery 41 detected by the sensor 42 into a second detected voltage. The second detection voltage can be input to the first input terminal of the comparison circuit 61a and the second input terminal of the comparison circuit 62a. The first input terminal is connected to the first terminal of the comparator circuit 63a. The second terminal of the comparator circuit 61a The second classification condition stored in the memory 61b is given to the child. The fourth classification condition stored in the memory 62b is applied to the terminal of the comparison circuit 63a. The second terminal is supplied with the sixth classification condition stored in the memory 63b.

[0091] That is, the circuit 22A classifies the detected voltage of the secondary battery 41 into the second classification condition, the fourth classification condition, and the or the sixth classification condition, the second classification range, the fourth classification range, or the sixth classification range. As an example, the second classification range can be stored in the memory 61b. The fourth classification range is the voltage stored in the memory 62b. The sixth classification is when the voltage is greater than the voltage stored in the memory 61b and less than the voltage stored in the memory 61b. The range is greater than the voltage stored in memory 63b and less than the voltage stored in memory 62b. In addition, if the voltage is smaller than the voltage stored in the memory 63b, is not classified in the second, fourth, or sixth classification range .

[0092] For example, if the signal is classified into the second classification range, the output terminal of the comparison circuit 61a displays the judgment As a result, a signal of "H" is given. If the signal is not classified into the second classification range, the comparison circuit 6 The output terminal of the comparison circuit 61a receives a signal of "L" as a result of the determination. The signal provided at the output terminal of corresponds to the second result.

[0093] For example, if the signal is classified into the fourth classification range, the output terminal of the comparison circuit 62a will display the judgment As a result, a signal of "H" is given. If the signal is not classified into the fourth classification range, the comparison circuit 6 The output terminal of the comparison circuit 62a receives a signal of "L" as a result of the determination. The signal provided to the output terminal of corresponds to the fourth result.

[0094] For example, if the signal is classified into the sixth classification range, the output terminal of the comparison circuit 63a will have a judgment As a result, a signal of "H" is given. If the signal is not classified into the sixth classification range, the comparator circuit 6 The output terminal of the comparison circuit 63a receives a signal of "L" as a result of the determination. The signal given to the output terminal corresponds to the sixth result.

[0095] If it is not classified in the second, fourth, or sixth classification range, a comparison The output terminals of the circuit 61a and the comparator circuit 63a are supplied with a signal of "L" as a result of the determination. .

[0096] Next, the circuit 31A will be described in detail. The circuit 31A includes a circuit 31a, a circuit 31b, and a circuit 31c. The circuit 31A uses the first to sixth results described above to calculate the current from the secondary battery 41. The circuit 31A can determine whether discharge from the battery is necessary. The circuit 31A transmits the determination result to the circuit 32A. As an example, the circuit 31a, the circuit 31b, and the circuit 31 It is preferable that each of c has a logical AND function.

[0097] For example, if the fifth result is a high signal and the sixth result is a high signal, the output A signal of "H" is applied to terminal D as a first determination signal from circuit 31c. The signal is applied to the gate of switch 33 to turn switch 33 on. When the power supply is turned on, the secondary battery 41 starts discharging.

[0098] As will be explained in detail later, when an "L" signal is given to output terminal B and output terminal C, As a result, an "L" signal is applied to the gate of the switch 32a and the gate of the switch 32b. Therefore, the switches 32a and 32b are turned off, and the discharge control The variable resistance of the control circuit is the first combined resistance value of resistors R1, R2, and R3. Therefore, the variable resistance is at the maximum value. The amount of discharge that is discharged is the smallest.

[0099] If the third result is a high signal and the fourth result is a high signal, output terminal C The second determination signal is given as a "H" signal from the circuit 31b. The first determination signal is given to the gate of the switch 32b, turning the switch 32b on. Since the signal "H" is maintained, the switch 33 is maintained in the ON state. When switch 32b is turned on, secondary battery 41 starts discharging.

[0100] When an "L" signal is applied to the output terminal B, an "L" signal is applied to the gate of the switch 32a. Therefore, the switch 32a is turned off, and the variable The resistance is the second combined resistance of resistors R1 and R2. The combined resistance value of the variable resistor is smaller than the combined resistance value of the first resistor. The amount of discharge becomes greater than during the period when the variable resistance is at the first combined resistance value.

[0101] If the first result is a high signal and the second result is a high signal, output terminal B The third determination signal is given as a "H" signal from the circuit 31a. The first determination signal is given to the gate of the switch 32a, turning the switch 32a on. Since the second determination signal is maintained at "H", the switches 33 and 32 The switches 33, 32b, and 32a are kept in the ON state. By entering the on state, the secondary battery 41 starts discharging.

[0102] The variable resistor of the discharge control circuit has the resistance value of resistor R1. The resistance value of the variable resistor is smaller than the resistance value of the secondary battery 41. The amount is greater than the period during which the variable resistor is at the second combined resistance value.

[0103] FIG. 4 is a diagram illustrating the operation of the secondary battery control circuit described in FIG. 3. The vertical axis represents temperature (Temp) (℃) and the horizontal axis represents time (T) (sec). The graph for L1 shows that as time passes, the environmental temperature where the secondary battery control circuit is placed rises. The graph of the characteristic L2 shows the state in which the detected voltage (Vol The graph of characteristic L1 shows the state where the secondary battery 41 is safely charged. The graph of characteristic L2 shows the threshold temperatures T1 to T3 for discharging. , the upper limit voltage for managing the charging voltage of the secondary battery 41 for the determination temperature T2 and the determination temperature T3. 10 shows the upper limit voltage V1, the upper limit voltage V2, and the upper limit voltage V3.

[0104] For example, the judgment temperature T1 is 40°C, the judgment temperature T2 is 50°C, and the judgment temperature T3 is 60°C. It is known that the environmental temperature suitable for charging the secondary battery 41 is between 0°C and 40°C. In other words, the set temperatures of the above-mentioned determination temperatures T1 to T3 are set based on the charging time of the secondary battery 41. However, the secondary battery 41 has a temperature outside the allowable temperature range during charging and storage. It is also known that the allowable temperature ranges are different. For example, the temperature suitable for storing the secondary battery 41 is In one embodiment of the present invention, the temperature of the secondary battery 4 is known to be between -20°C and 60°C. The following description focuses on the case where the temperature at which 1 is stored is 40° C. or higher. The secondary battery control circuit is not limited to operating only at high temperatures, but also at temperatures between -20°C and 0°C. The first and second classification conditions of the lookup table are updated in the following ranges. Or, this can be addressed by increasing the number of judgment conditions.

[0105] The determination conditions for detecting the determination temperature T1, the determination temperature T2, or the determination temperature T3 are shown in FIG. The data is stored in the memory 63b, memory 62b, or memory 61b described above. The charge voltage of the secondary battery 41 corresponding to the temperature T1, the judgment temperature T2, or the judgment temperature T3 The upper limit voltage V1, upper limit voltage V2, and upper limit voltage V3 are used as the group conditions. The determination conditions for detecting the limit voltage V2 or the upper limit voltage V3 are stored in the memory 5 shown in FIG. 3b, memory 52b, or memory 51b.

[0106] That is, when the temperature reaches or exceeds T1, the charging voltage of the secondary battery 41 is increased from the upper limit voltage V0 to the upper limit voltage V1. The charging voltage of the secondary battery 41 is changed to voltage V1, and discharging is started so that the charging voltage of the secondary battery 41 becomes voltage V1. Furthermore, when the temperature reaches or exceeds T2, the upper limit of the charging voltage of the secondary battery 41 is changed from voltage V1 to voltage The voltage is changed to V2, and discharging is started so that the charging voltage of the secondary battery 41 becomes voltage V2. Also, when the temperature reaches T3 or higher, the upper limit of the charging voltage of the secondary battery is changed from voltage V2 to voltage V3. The secondary battery 41 is then discharged so that its charging voltage becomes voltage V3. The higher the temperature of the secondary battery 41, the faster the deterioration of the secondary battery 41. It is preferable to discharge the secondary battery 41 quickly.

[0107] As explained in FIG. 4, the higher the detected temperature, the greater the discharge time from the charging voltage of the secondary battery 41. The discharge control circuit changes the resistance value of the variable resistor according to the detected temperature. The discharge amount is adjusted by changing the voltage. The period RT2 represents the time required for discharging from the voltage V0 to the upper limit voltage V1. It represents the time required for the battery 41 to discharge from the upper limit voltage V1 to the upper limit voltage V2. The time RT3 is the time required for discharging the secondary battery 41 from the upper limit voltage V2 to the upper limit voltage V3. The discharge in the period RT2 is completed in a shorter time than the period RT1. Therefore, the secondary battery 41 is likely to deteriorate. When stored in a high-temperature environment, discharge control from the secondary battery 41 is performed using feedback control of the temperature. The discharge control circuit amplifies the discharge amount from the secondary battery 41 in response to the temperature. It can function as a feedback amplifier circuit. Therefore, the secondary battery can be discharged without the need for a control processor. This allows the power consumption of the control processor to be reduced.

[0108] FIG. 5 is a diagram illustrating the secondary battery control circuit 10B. The secondary battery control circuit 10B includes multiple A number of circuits 10A are connected in series. Note that in FIG. 5, the differences from FIG. 2 are explained. However, in the structure of the invention (or the structure of the embodiment), the same part or part having a similar function The same reference numerals are used for the components in different drawings, and the repeated explanations will be omitted.

[0109] The secondary battery control circuit 10B connects a plurality of secondary battery modules 40A in series. This is an example of a configuration that can obtain a high voltage. These include variations in the capacity of secondary batteries, variations in the deterioration of secondary batteries, and variations in the charging voltage of secondary batteries. etc.

[0110] Therefore, in order to connect a plurality of secondary battery modules 40A in series, It is preferable to provide a cell balance control circuit for the module 40A. The circuit is configured to allow the secondary battery module 40A with a low remaining charge to reach a fully charged state. , and has the function of discharging excess power from the secondary battery module 40A that has reached a fully charged state first. Furthermore, when a secondary battery is left in a high-temperature environment, the secondary battery control circuit of one embodiment of the present invention is used. In this case, discharge management of a plurality of secondary battery modules 40A can be performed.

[0111] When a plurality of secondary battery modules 40A are connected in series, the secondary battery modules 40A function as shunt resistors. Only one resistor 43 is required. The shunt resistor can be used for overcurrent detection, etc. can.

[0112] 6A and 6B illustrate the memory that configures the above-mentioned lookup table. FIG.

[0113] 6A includes a transistor M1, a capacitor C1, and wirings 71 to 73. One of the electrodes of C1 is electrically connected to either the source or the drain of the transistor M1. The other electrode of the capacitor C1 is electrically connected to the wiring 73. The other of the source and drain is electrically connected to a wiring 71. The port is electrically connected to the wiring 72 .

[0114] The memory shown in FIG. 6A is a DOSRAM (Dynamics Random Access Memory) that uses OS transistors as memory. ic Oxide Semiconductor Random Access Mem It can be configured with one transistor and one capacitor. In addition, the use of OS transistors allows for high-density memory. The data retention period can be increased.

[0115] FIG. 6B shows transistor M2, transistor M3, capacitor C2, and wiring 74 to 78. One of the electrodes of the capacitor C2 is connected to one of the source and drain of the transistor M2. The other electrode of the capacitor C2 is electrically connected to the gate of the transistor M3. The other of the source and the drain of the transistor M2 is electrically connected to the wiring 7 The gate of the transistor M2 is electrically connected to the wiring 75. One of the source and the drain of the transistor M3 is electrically connected to the wiring 76. The other of the source and the drain of the transistor M3 is electrically connected to a wiring 77. The transistor M2 is preferably an OS transistor.

[0116] The memory shown in FIG. 6B is a non-volatile random access memory (NOSRAM) that uses OS transistors as memory. olatile Oxide Semiconductor Random Acces The OS transistor is placed above the Si transistor. Since it can be formed by stacking, it is possible to achieve high density memory. This allows for a longer data retention period. Therefore, the power required to write back the data is can be reduced.

[0117] The memories shown in FIGS. 6A and 6B can retain data for a long time. An electronic device equipped with a secondary battery control circuit having such a memory, which is one aspect of the present invention, Therefore, the frequency of updating the backup table can be reduced. is effective in reducing power consumption.

[0118] The secondary battery control circuit according to one embodiment of the present invention is a Thus, secondary batteries can be used efficiently to operate various electronic devices. When using the processor functions of the electronic device, the secondary battery control circuit is This can be rephrased as a management system.

[0119] The semiconductor device according to one embodiment of the present invention is suitable for a case where the charging characteristics of a secondary battery change rapidly or By monitoring the charging characteristics of the secondary battery, This can suppress deterioration of the secondary battery and improve reliability. This reduces the power consumption of the secondary battery control circuit.

[0120] Secondary battery control circuits, discharge control circuits, and abnormality detection circuits using OS transistors BTOS (Battery operating system, or Battery It is sometimes called a crystalline oxide semiconductor.

[0121] Note that the semiconductor device according to one embodiment of the present invention is not limited to the circuit diagram shown in this embodiment. The semiconductor device according to one embodiment of the present invention may include the semiconductor device shown in this embodiment. This also includes cases where the circuit has a circuit configuration equivalent to the circuit configuration described above.

[0122] This embodiment may be implemented in appropriate combination with the configurations described in other embodiments. is possible.

[0123] (Embodiment 2) In this embodiment, examples of the shape of the secondary battery used in the previous embodiment will be described. It is preferable that the discharge of the secondary battery be controlled according to temperature by a secondary battery control circuit. .

[0124] [Coin-type secondary battery] First, an example of a coin-type secondary battery will be described. Figure 7A shows a coin-type (single-layer flat type) FIG. 7B is a cross-sectional view of the secondary battery.

[0125] The coin-type secondary battery 300 has a positive electrode can 301 that also serves as a positive electrode terminal and a negative electrode can 302 that also serves as a negative electrode terminal. The can 302 is insulated and sealed with a gasket 303 made of polypropylene or the like. The positive electrode 304 is composed of a positive electrode current collector 305 and a positive electrode active material layer 30 provided in contact with the positive electrode current collector 305. The negative electrode 307 is formed by a negative electrode current collector 308 and a negative electrode current collector 308 which is set in contact with the negative electrode current collector 308. The negative electrode active material layer 309 is formed by the bonding.

[0126] The positive electrode 304 and the negative electrode 307 used in the coin-type secondary battery 300 are active The material layer only needs to be formed on one side.

[0127] The positive electrode can 301 and the negative electrode can 302 are made of nickel and aluminum, which are corrosion-resistant to the electrolyte. Metals such as aluminum and titanium, or alloys of these and other metals (e.g., stainless steel) In addition, nickel or aluminum can be used to prevent corrosion by the electrolyte. The positive electrode can 301 is the positive electrode 304, and the negative electrode can 302 is the negative electrode. 307 and electrically connected to each other.

[0128] The negative electrode 307, the positive electrode 304, and the separator 310 are impregnated with an electrolyte, and as shown in FIG. As shown, the positive electrode can 301 is placed downwards, and the positive electrode 304, separator 310, negative electrode 307, and negative electrode The cans 302 are stacked in this order, and the positive electrode can 301 and the negative electrode can 302 are secured together with a gasket 303 interposed therebetween. The coin-type secondary battery 300 is manufactured by crimping.

[0129] Here, the flow of current during charging of a secondary battery will be explained using FIG. 7C. When the battery is considered as a closed circuit, the movement of lithium ions and the flow of current are in the same direction. In secondary batteries that use lithium, the anode (positive electrode) and cathode ( The cathode and cathode are switched, and the oxidation and reduction reactions are switched, so the reaction voltage is high. The electrode with a low reaction voltage is called the positive electrode, and the electrode with a low reaction voltage is called the negative electrode. The charging voltage is constant whether the battery is charging, discharging, or passing a reverse pulse current. Even when a current flows, the positive electrode is called the "positive electrode" or "+ electrode (plus electrode)" and the negative electrode is called the " The negative electrode is the electrode that is connected to the negative electrode. When the terms anode (positive electrode) and cathode (negative electrode) are used, the reverse occurs during charging and discharging. This can lead to confusion. Therefore, the anode and cathode The term "cathode" will not be used in this specification. When using the term cathode, specify whether it is charging or discharging, and It will also be indicated whether it corresponds to a positive pole or a negative pole.

[0130] A charger is connected to the two terminals shown in FIG. 7C, and the secondary battery 300 is charged. As the battery 300 charges, the voltage difference between the electrodes increases.

[0131] [Cylindrical secondary battery] Next, an example of a cylindrical secondary battery will be described with reference to FIGS. 8A to 8D. 8A shows an external view of the secondary battery 800. FIG. 8B is a schematic cross-sectional view of the cylindrical secondary battery 800. As shown in FIG. 8B, the cylindrical secondary battery 800 has a positive electrode capacitor on the top surface. The battery has a top (battery cover) 801 and a battery can (external can) 802 on the side and bottom. The positive electrode cap and the battery can (external can) 802 are connected by a gasket (insulating packing) 810 It is insulated by

[0132] Inside a hollow cylindrical battery can 802, a strip-shaped positive electrode 804 and a negative electrode 806 are placed with a separator. The battery element is wound with the battery 805 sandwiched between them. The battery can 802 is closed at one end and open at the other. The battery can 802 is made of nickel, aluminum, titanium, or other materials that are resistant to corrosion by the electrolyte. Metals such as these, or their alloys or alloys of these with other metals (e.g., stainless steel, etc.) In addition, nickel, aluminum, etc. can be used to prevent corrosion by the electrolyte. It is preferable that the battery can 802 is covered with the positive electrode, the negative electrode, and the The battery element, in which the separator and the battery cell are wound, is sandwiched between a pair of opposing insulating plates 808 and 809. The inside of the battery can 802 in which the battery element is provided is filled with a non-aqueous electrolyte (not shown). The non-aqueous electrolyte used can be the same as that used in coin-type secondary batteries. Cut.

[0133] The positive and negative electrodes used in cylindrical storage batteries are wound, so active material is formed on both sides of the current collector. A positive electrode terminal (positive electrode current collecting lead) 803 is connected to the positive electrode 804, and a negative A negative electrode terminal (negative electrode current collecting lead) 807 is connected to the positive electrode 806. The positive electrode terminal 807 can be made of a metal material such as aluminum. 803 is resistance-welded to the safety valve mechanism 812, and the negative terminal 807 is resistance-welded to the bottom of the battery can 802. The safety valve mechanism 812 is a PTC (Positive Temperature Coefficient) element. The positive electrode cap 801 is electrically connected to the positive electrode cap 801 via a positive electrode coefficient 611. The safety valve mechanism 812 releases the positive electrode cap 801 when the internal pressure of the battery exceeds a predetermined threshold. The PTC element 811 cuts off the electrical connection between the positive electrode 804 and the positive electrode 804. It is a thermal resistor whose resistance increases when the temperature rises, and the increase in resistance limits the amount of current. It prevents abnormal heat generation. The PTC element is made of barium titanate (BaTiO3) Semiconductor ceramics and the like can be used.

[0134] 8C, a plurality of secondary batteries 800 are disposed between conductive plates 813 and 814. The secondary batteries 800 may be sandwiched between the secondary batteries 800 to form a module 815. They may be connected in series or in parallel and then in series. By configuring a module 815 having a plurality of secondary batteries 800, a large It is possible to extract sufficient power.

[0135] 8D is a top view of module 815. Conductive plate 813 is shown with dashed lines for clarity. As shown in FIG. 8D, a module 815 electrically connects a plurality of secondary batteries 800. A conductive plate may be provided over the conductive wire 816. Furthermore, a temperature control device 817 may be provided between the plurality of secondary batteries 800. When the secondary battery 800 is overheated, it is cooled by the temperature control device 817. If it is too hot, it can be heated by the temperature control device 817. The performance of 815 is less affected by the outside temperature. The heat medium of the temperature control device 817 is insulating. It is preferable that the material is non-flammable and non-combustible.

[0136] [Example of secondary battery structure] Another structural example of the secondary battery will be described with reference to FIGS.

[0137] 9A and 9B are diagrams showing the external appearance of a secondary battery. Through the board 900, it is connected to the antenna 914 and the antenna 915. A label 910 is attached to the secondary battery 913. Furthermore, as shown in FIG. The pond 913 is connected to a terminal 951 and a terminal 952 .

[0138] The circuit board 900 has a terminal 911 and a circuit 912. The terminal 911 is connected to the terminal 95. 1, terminal 952, antenna 914, antenna 915, and circuit 912. A plurality of terminals 911 are provided, and each of the plurality of terminals 911 is connected to a control signal input terminal, a power supply terminal, and the like. It may also be a terminal.

[0139] The circuit 912 may be provided on the back surface of the circuit board 900. The antenna 915 is not limited to a coil shape, but may be, for example, a wire shape or a plate shape. Also, planar antennas, aperture antennas, traveling wave antennas, EH antennas, magnetic field antennas, induction Alternatively, an antenna such as an electric antenna may be used. 15 may be a flat conductor. This flat conductor functions as one of the conductors for electric field coupling. In other words, it can function as one of the two conductors of a capacitor. , antenna 914 or antenna 915 may be activated. Electric power can be exchanged not only through magnetic fields but also through electric fields.

[0140] The line width of antenna 914 is preferably larger than the line width of antenna 915. This allows the amount of power received by the antenna 914 to be increased.

[0141] The secondary battery is a layer 91 between the antenna 914 and the antenna 915 and the secondary battery 913. The layer 916 has a function of shielding the electromagnetic field generated by the secondary battery 913, for example. The layer 916 may be made of, for example, a magnetic material.

[0142] The structure of the secondary battery is not limited to that shown in FIG.

[0143] For example, as shown in FIGS. 10A and 10B, the secondary battery 9 shown in FIGS. 9A and 9B 13, an antenna may be provided on each of a pair of opposing surfaces. FIG. 10B is an external view showing one of the pair of surfaces, and FIG. 10B is an external view showing the other of the pair of surfaces. 9A and 9B. The description of the secondary battery shown in FIG. 9B can be used as appropriate.

[0144] As shown in FIG. 10A, a layer 916 is sandwiched between one of the two surfaces of a secondary battery 913, and an antenna 10B, a layer 914 is provided on the other of the pair of surfaces of the secondary battery 913. The layer 917 is provided with an antenna 918 sandwiched between them. The layer 917 has a function of shielding the magnetic field. can.

[0145] By adopting the above structure, the size of both the antenna 914 and the antenna 918 can be increased. The antenna 918 is used, for example, to perform data communication with an external device. The antenna 918 has a shape that can be applied to the antenna 914, for example. An antenna can be applied. Communication between the secondary battery and other devices via the antenna 918 The method is to use NFC (near field communication) or other methods between the secondary battery and other devices. A response method that can do this can be applied.

[0146] Alternatively, as shown in FIG. 10C, the display device may be connected to the secondary battery 913 shown in FIGS. 9A and 9B. A display device 920 may be provided. The display device 920 is electrically connected to the terminal 911. The label 910 may not be provided in the portion where the display device 920 is provided. The same parts as those of the secondary battery shown in FIG. 9B are the same as those of the secondary battery shown in FIG. 9A and FIG. 9B. can be used as appropriate.

[0147] The display device 920 displays, for example, an image indicating whether charging is in progress or not, an image indicating the amount of stored power, etc. The display device 920 may be, for example, an electronic paper, a liquid crystal display, an electronic For example, an electroluminescence (EL) display device can be used. By using the polarizer, the power consumption of the display device 920 can be reduced.

[0148] Alternatively, as shown in FIG. 10D, the sensor 913 shown in FIGS. 9A and 9B may be connected to the secondary battery 913. The sensor 921 is electrically connected to the terminal 911 via the terminal 922. 9A and 9B. The description of the secondary battery shown in 9B can be used as appropriate.

[0149] The sensor 921 may be, for example, a sensor for measuring displacement, position, velocity, acceleration, angular velocity, number of rotations, distance, Light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, If it has the ability to measure flow rate, humidity, gradient, vibration, odor, or infrared By providing the sensor 921, for example, it is possible to obtain a data indicating the environment in which the secondary battery is placed. It is also possible to detect data (such as temperature) and store it in memory within the circuit 912.

[0150] Furthermore, an example of the structure of the secondary battery 913 will be described with reference to FIGS.

[0151] The secondary battery 913 shown in FIG. 11A has a terminal 951 and a terminal 952 provided inside a housing 930. The winding 950 is impregnated with an electrolyte inside the housing 930. The terminal 952 is in contact with the housing 930, and the terminal 951 is in contact with the housing by using an insulating material or the like. 11A, the housing 930 is not in contact with the housing 930. For convenience, the housing 930 is shown separately. However, in reality, the winding body 950 is covered by the housing 930, and the terminals 951 and 952 are The housing 930 is made of a metal material (for example, aluminum). etc.) or resin materials can be used.

[0152] As shown in FIG. 11B, the housing 930 shown in FIG. 11A is formed from a plurality of materials. For example, the secondary battery 913 shown in FIG. The housings 930a and 930b are joined together, and a wound body 950 is provided in the area surrounded by the housings 930a and 930b. It is being used.

[0153] The housing 930a can be made of an insulating material such as organic resin. By using a material such as organic resin on the surface on which the capacitor is formed, the electric field generated by the secondary battery 913 If the shielding of the electric field by the housing 930a is small, the housing 930a Antennas such as antenna 914 and antenna 915 may be provided inside the housing 930b. For example, a metal material can be used as the material.

[0154] Furthermore, the structure of the wound body 950 is shown in FIG. 12. The wound body 950 includes a negative electrode 931 and The wound body 950 has a positive electrode 932 and a separator 933. The wound body 950 has the separator 933 sandwiched therebetween. Then, the negative electrode 931 and the positive electrode 932 are stacked one on top of the other, and the laminated sheet is wound. The negative electrode 931, the positive electrode 932, and the separator 933 may be further laminated. Multiple layers may be stacked.

[0155] The negative electrode 931 is connected to the terminal 911 shown in FIG. 9 via one of the terminals 951 and 952. The positive electrode 932 is connected to the terminal 951 shown in FIG. Connected to 11.

[0156] [Bonded secondary battery] Next, an example of a laminated secondary battery will be described with reference to FIGS. If the laminated secondary battery is made flexible, it can be made with fewer flexible parts. If the secondary battery is mounted in an electronic device that has some of the same characteristics, the secondary battery can be bent in accordance with the deformation of the electronic device. It is also possible.

[0157] A bonded secondary battery 980 will be described with reference to FIG. The secondary battery 980 has a wound body 993 shown in FIG. 13A. The wound body 993 has a negative electrode 994 and 12. The wound body 993 has a positive electrode 995 and a separator 996. As with the case 950, a negative electrode 994 and a positive electrode 995 are stacked with a separator 996 sandwiched therebetween. The laminated sheet is then wound up.

[0158] The number of layers of the negative electrode 994, the positive electrode 995, and the separator 996 may be as many as necessary. The negative electrode 994 is connected to the lead electrode 997 and the lead electrode 998. The positive electrode 995 is connected to a negative electrode current collector (not shown) via one of the lead electrodes 998. The positive electrode 997 is connected to a positive electrode current collector (not shown) via the other of the electrode 997 and the lead electrode 998. .

[0159] As shown in FIG. 13B, a film 981 serving as an exterior body and a film 982 having a recess are provided. The above-mentioned wound body 993 is housed in a space formed by bonding the above-mentioned wound body 993 together by thermocompression bonding or the like. In this way, a secondary battery 980 can be fabricated as shown in FIG. The lead electrode 997 and the lead electrode 998 are provided. The film 981 and the film 982 are provided with a recess. The interior of the glass 982 is impregnated with an electrolyte.

[0160] The film 981 and the film 982 having the recesses are made of a metal material such as aluminum. The film 981 and the film 982 having the recesses can be made of a metal or resin material. If a resin material is used as the material for the recess, when an external force is applied, the film 981 and the recess The film 982 having the above structure can be deformed to produce a flexible storage battery. can be done.

[0161] In addition, although an example using two films is shown in FIG. 13B and FIG. 13C, a single film may be used. A space is formed by folding the film, and the above-mentioned wound body 993 is accommodated in the space. You may also pay.

[0162] In addition, in FIG. 13, a secondary battery having a wound body in a space formed by a film that serves as an exterior body is shown. We have explained the example of 980, but as shown in Figure 14, the shape is determined by the film that forms the exterior. It can also be used as a secondary battery having a plurality of rectangular positive electrodes, separators, and negative electrodes in the space formed. good.

[0163] The laminated secondary battery 700 shown in FIG. 14A includes a positive electrode current collector 701 and a positive electrode active material. a positive electrode 703 having a negative electrode active material layer 702, a negative electrode current collector 704 and a negative electrode active material layer 705 The battery includes a negative electrode 706, a separator 707, an electrolyte 708, and an exterior body 709. A separator 707 is provided between a positive electrode 703 and a negative electrode 706 provided in a body 709. The exterior body 709 is filled with an electrolyte 708. The electrolyte solution shown in the second embodiment can be used.

[0164] In the laminated secondary battery 700 shown in FIG. 14A, a positive electrode current collector 701 and a negative electrode current collector 702 are The positive electrode current collector 704 also serves as a terminal for electrical contact with the outside. The current collector 701 and the negative electrode current collector 704 are partially exposed to the outside from the outer casing 709. In addition, the positive electrode current collector 701 and the negative electrode current collector 704 may be disposed in the outer casing 709. The lead electrode is not exposed to the outside, and the lead electrode is connected to the positive electrode current collector 701 or the negative electrode The lead electrode may be exposed to the outside by ultrasonic bonding to the current collector 704 .

[0165] In the laminated secondary battery 700, the exterior body 709 is made of, for example, polyethylene, polypropylene, or the like. On a membrane made of a material such as polypropylene, polycarbonate, ionomer, or polyamide, A thin metal film with excellent flexibility, such as aluminum, stainless steel, copper, or nickel, is applied. On the metal thin film, an insulating composite such as polyamide resin or polyester resin is used as the outer surface of the exterior body. A laminated film having a three-layer structure provided with a resin film can be used.

[0166] An example of the cross-sectional structure of the bonded secondary battery 700 is shown in FIG. For simplicity, an example consisting of two current collectors is shown in Fig. 14B. It is composed of multiple electrode layers.

[0167] In FIG. 14B, as an example, the number of electrode layers is set to 16. In FIG. 14B, the negative electrode current collector 704 has eight layers and the positive electrode current collector The structure shown is 16 layers in total, with 8 layers of the conductive material 701. 7 shows a cross section of eight layers of negative electrode current collectors 704 that are ultrasonically bonded together. The number is not limited to 16, and may be more or less. In addition, when the number of electrode layers is small, the secondary battery can be thin. This allows the secondary battery to be molded and has excellent flexibility.

[0168] An example of an external view of the laminated secondary battery 700 is shown in FIGS. 15 and 16 show a positive electrode 703, a negative electrode 706, a separator 707, an outer casing 709, ... It has a positive lead electrode 710 and a negative lead electrode 711.

[0169] 17A shows an external view of the positive electrode 703 and the negative electrode 706. The positive electrode 703 is a positive electrode current collector 70 1, and the positive electrode active material layer 702 is formed on the surface of the positive electrode current collector 701. 703 has a region where the positive electrode current collector 701 is partially exposed (hereinafter referred to as the tab region). 706 has a negative electrode current collector 704, and a negative electrode active material layer 705 is formed on the surface of the negative electrode current collector 704. The negative electrode 706 has a region where the negative electrode current collector 704 is partially exposed, that is, a tab region. The area and shape of the tab regions of the positive electrode and negative electrode are not limited to the example shown in FIG. 17A. I can't.

[0170] [Method for manufacturing bonded secondary batteries] Here, an example of a method for manufacturing a laminated secondary battery, the external view of which is shown in FIG. 17B and 17C.

[0171] First, the negative electrode 706, the separator 707, and the positive electrode 703 are stacked. The negative electrode 706, separator 707, and positive electrode 703 are shown. Next, the bonding of the tab regions of the positive electrode 703 and the bonding of the tabs of the positive electrode on the outermost surface are shown. The positive electrode lead electrode 710 is bonded to the bonding region. For example, ultrasonic welding or the like is used for bonding. Similarly, the tab regions of the negative electrodes 706 are bonded to each other, and the negative electrode is bonded to the tab region of the negative electrode on the outermost surface. The lead electrode 711 is bonded.

[0172] Next, the negative electrode 706 , the separator 707 and the positive electrode 703 are placed on the exterior body 709 .

[0173] Next, as shown in Figure 17C, exterior body 709 is folded at the portion indicated by the dashed line. The outer periphery of the outer casing 709 is bonded. For example, thermocompression bonding may be used for bonding. The electrode is connected to a part (or one side) of the exterior body 709 so that the electrolyte 708 can be poured in later. An area where the two components are not mixed (hereinafter referred to as an inlet) is provided.

[0174] Next, electrolyte 708 (not shown) is introduced into the exterior body 709 through an inlet provided in the exterior body. The electrolyte 708 is introduced into the inside of the electrode 709 under a reduced pressure atmosphere or an inert atmosphere. Finally, the inlet is bonded. A secondary battery 700 of this type can be fabricated.

[0175] [Bendable secondary battery] Next, examples of bendable secondary batteries are shown in FIGS. 18A to 18E and 19A. , which will be explained with reference to FIG. 19B.

[0176] 18A shows a schematic top view of a bendable secondary battery 250. 18C and 18D are cut along the lines C1-C2, C3-C4, and The secondary battery 250 is a schematic cross-sectional view taken along the line A1-A2. The positive electrode 211a and the negative electrode 211b are housed inside the body 251. The lead 212a electrically connected to the negative electrode 211b and the lead 212b electrically connected to the negative electrode 211b 12b extends outside the exterior body 251. In addition, in the area surrounded by the exterior body 251, In addition to the positive electrode 211a and the negative electrode 211b, an electrolyte (not shown) is enclosed.

[0177] The positive electrode 211a and the negative electrode 211b of the secondary battery 250 will be explained with reference to FIG. FIG. 19A illustrates the stacking order of the positive electrode 211a, the negative electrode 211b, and the separator 214. FIG. 19B is a perspective view illustrating the structure of the lead 211 in addition to the positive electrode 211a and the negative electrode 211b. 2a and lead 212b.

[0178] As shown in FIG. 19A, the secondary battery 250 includes a plurality of rectangular positive electrodes 211a, a plurality of rectangular positive electrodes 211b, a plurality of rectangular positive electrodes 211c, a plurality of rectangular positive electrodes 211d, a plurality of rectangular positive electrodes 211e, a plurality of rectangular positive electrodes 211f, a plurality of rectangular positive electrodes 211g, a plurality of rectangular positive electrodes 211h ... The positive electrode 211a and the negative electrode 211b have a rectangular shape and a plurality of separators 214. 1b each have a protruding tab portion and a portion other than the tab. A positive electrode active material layer is formed on the portion other than the tab of the negative electrode 211b. A negative electrode active material layer is formed on the negative electrode.

[0179] The surfaces of the positive electrodes 211a on which the positive electrode active material layer is not formed and the surfaces of the negative electrodes 211b on which the negative electrode active material layer is not formed are The positive electrode 211a and the negative electrode 211b are stacked so that the surfaces on which no material is formed are in contact with each other. will be done.

[0180] In addition, the surface on which the positive electrode active material of the positive electrode 211a is formed and the surface on which the negative electrode active material of the negative electrode 211b is formed are A separator 214 is provided between the surfaces. The data 214 is shown by a dotted line.

[0181] As shown in FIG. 19B, the positive electrodes 211a and the leads 212a are connected to each other at the joints 215a. The negative electrodes 211b and the leads 212b are electrically connected at the joints 21 5b are electrically connected.

[0182] Next, the exterior body 251 will be described with reference to FIGS. 18B, 18C, 18D, and 18E. Reveal.

[0183] The exterior body 251 has a film-like shape and is configured to sandwich the positive electrode 211a and the negative electrode 211b. The exterior body 251 is folded in two as shown in FIG. The pair of sealing portions 262 are connected to the positive electrode 211a and the sealing portion 263. The seal portion 2 is provided on either side of the negative electrode 211b and can also be called a side seal. 63 has a portion overlapping with the lead 212a and the lead 212b, and is also called a top seal. You can do it.

[0184] The exterior body 251 has ridge lines 271 and valley lines at the portions overlapping the positive electrode 211a and the negative electrode 211b. It is preferable that the sealing portion 272 of the exterior body 251 has a wave shape in which the sealing portions 272 are arranged alternately. 62 and seal portion 263 are preferably flat.

[0185] FIG. 18B is a cross section cut at the portion overlapping with the ridge line 271, and FIG. 18C is a cross section cut at the portion overlapping with the valley line 272. 18B and 18C are cross sections cut at the overlapping portion of the secondary battery 250 and and corresponds to a cross section in the width direction of the positive electrode 211a and the negative electrode 211b.

[0186] Here, the widthwise ends of the positive electrode 211a and the negative electrode 211b, i.e., the positive electrode 211a and the negative electrode 211b, The distance between the end of the negative electrode 211b and the seal portion 262 is defined as La. When deformation such as bending is applied to the positive electrode 211a and the negative electrode 211b, as will be described later, If the distance La is too short, the outer casing 251 The positive electrode 211a and the negative electrode 211b may rub strongly against each other, and the exterior body 251 may be damaged. In particular, if the metal film of the exterior body 251 is exposed, the metal film may be easily damaged by the electrolyte. Therefore, it is preferable to set the distance La as long as possible. On the other hand, if the distance La is made too large, the volume of the secondary battery 250 increases. .

[0187] In addition, the greater the total thickness of the stacked positive electrode 211a and negative electrode 211b, the greater the It is preferable to increase the distance La between the negative electrode 211a and the seal portion 262. stomach.

[0188] More specifically, the stacked positive electrode 211a, negative electrode 211b, and separator (not shown) When the total thickness of the actuator 214 is t, the distance La is 0.8 to 3.0 times the thickness t. Preferably, the ratio is 0.9 to 2.5 times, more preferably 1.0 to 2.0 times. By setting the distance La in this range, it is possible to make the device compact and resistant to bending. This makes it possible to realize a highly reliable battery.

[0189] Furthermore, when the distance between the pair of seal portions 262 is a distance Lb, the distance Lb is a and the width of the negative electrode 211b (here, the width Wb of the negative electrode 211b). This is preferable because it prevents the secondary battery 250 from being deformed by repeated bending or other deformation. Even if the positive electrode 211a and the negative electrode 211b come into contact with the exterior body 251, Since a part of the negative electrode 211b can be shifted in the width direction, the positive electrode 211a and the negative electrode 211 This effectively prevents the outer casing 251 from rubbing against the outer casing 251.

[0190] For example, the difference between the distance Lb between the pair of seal portions 262 and the width Wb of the negative electrode 211b is The thickness is 1.6 times or more and 6.0 times or less, preferably 1.8 times or more, the thickness t of the positive electrode 211a and the negative electrode 211b. It is preferable that the ratio is 2.0 times or more and 5.0 times or less, and more preferably 2.0 times or more and 4.0 times or less. stomach.

[0191] In other words, the distance Lb, the width Wb, and the thickness t must satisfy the relationship of the following formula 1: preferable.

[0192]

number

[0193] Here, a is 0.8 or more and 3.0 or less, preferably 0.9 or more and 2.5 or less, and more preferably The value must be between 1.0 and 2.0.

[0194] FIG. 18D is a cross section including the lead 212a, and shows the secondary battery 250, the positive electrode 211a, and 18D, the bent portion 26 corresponds to the cross section of the negative electrode 211b in the longitudinal direction. 1, between the ends of the positive electrode 211a and the negative electrode 211b in the length direction and the exterior body 251 It is preferable to have a space 273 therebetween.

[0195] FIG. 18E shows a schematic cross-sectional view of the secondary battery 250 when bent. This corresponds to the cross section taken along the line B1-B2 in FIG. 18A.

[0196] When the secondary battery 250 is bent, a part of the exterior body 251 located on the outside of the bend stretches, and More specifically, the other part located on the outside of the exterior body 251 is deformed so as to shrink. The part where the wave is generated is deformed so that the amplitude of the wave is small and the period of the wave is large. The part located inside 251 changes so that the wave amplitude is large and the wave period is small. In this way, the exterior body 251 is deformed, and as it is bent, Since this stress is alleviated, the material that constitutes exterior body 251 itself does not need to expand or contract. As a result, the exterior body 251 is not damaged and the secondary battery 250 can be bent with a small force. can.

[0197] Furthermore, as shown in FIG. 18E, when the secondary battery 250 is bent, the positive electrode 211a and the negative electrode 211b are bent. At this time, the plurality of stacked positive electrodes 211a and negative electrodes 11b are displaced relative to each other. The pole 211b is fixed at one end on the seal portion 263 side by the fixing member 217, so that the pole 211b is not bent. The amount of deviation increases as the distance approaches the edge 261. The stress applied to the positive electrode 211a and the negative electrode 211b is relieved, and the positive electrode 211a and the negative electrode 211b themselves As a result, the positive electrode 211a and the negative electrode 211b are not damaged. The secondary battery 250 can be easily bent.

[0198] In addition, a space 273 is provided between the positive electrode 211a and the negative electrode 211b and the exterior body 251. By this, the positive electrode 211a and the negative electrode 211b located on the inner side when bent are attached to the exterior body 25. It can move relative to 1 without touching it.

[0199] The secondary battery 250 illustrated in FIGS. 18 and 19 has a good external appearance even when repeatedly bent and stretched. Damage to the housing, the positive electrode 211a and the negative electrode 211b, etc., is unlikely to occur, and the battery characteristics are also unlikely to deteriorate. It is a difficult battery to charge.

[0200] (Embodiment 3) In this embodiment, an example in which a secondary battery according to one embodiment of the present invention is mounted in an electronic device will be described. The secondary battery is controlled by a secondary battery control circuit to control discharge according to temperature. is preferred.

[0201] First, as explained in part of the third embodiment, a bendable secondary battery is mounted on an electronic device. Examples of such a device are shown in Figs. 20A to 20G. For example, television equipment (also called television or television receiver), computers, Computer monitors, digital cameras, digital video cameras, digital photo frames systems, mobile phones (also called mobile phones or mobile phone devices), portable game machines, personal digital assistants, Examples include audio playback devices and large game machines such as pachinko machines.

[0202] In addition, the flexible secondary battery can be attached to the inner or outer wall of a house or building, or to an automobile. It can also be incorporated into curved surfaces of the interior or exterior of a vehicle.

[0203] FIG. 20A shows an example of a mobile phone. A mobile phone 7400 is provided in a housing 7401. In addition to the built-in display unit 7402, operation buttons 7403, external connection port 7404, The mobile phone 7400 is equipped with a speaker 7405, a microphone 7406, etc. The secondary battery 7407 is a secondary battery according to one embodiment of the present invention. This makes it possible to provide a lightweight mobile phone with a long lifespan.

[0204] FIG. 20B shows the mobile phone 7400 in a bent state. When the battery is deformed by an external force and curved, the secondary battery 7 disposed inside the battery The secondary battery 7407 is also bent. At this time, the state of the bent secondary battery 7407 is shown in FIG. 20C. The secondary battery 7407 is a thin storage battery. The secondary battery 7407 is fixed in a bent state. The secondary battery 7407 has a lead electrode electrically connected to the current collector. For example, the current collector is made of copper foil, and some of it is alloyed with gallium to form an active material in contact with the current collector. This improves adhesion with the polymer layer, resulting in a highly reliable configuration even when the secondary battery 7407 is bent. It is.

[0205] FIG. 20D shows an example of a bangle-type display device. The portable display device 7100 is The device includes a body 7101, a display unit 7102, operation buttons 7103, and a secondary battery 7104. 20E shows the state of the bent secondary battery 7104. The secondary battery 7104 is bent. When the device is attached to the user's arm, the housing may deform and cause the secondary battery 7104 to explode. The curvature of the curve changes. The degree of curvature at any point on the curve can be expressed as the radius of the corresponding circle. The radius of curvature is called the radius of curvature, and the reciprocal of the radius of curvature is called the curvature. A part of the main surface of the casing or secondary battery 7104 within a range of 0 mm to 150 mm The radius of curvature of the main surface of the secondary battery 7104 is 40 mm or more and 150 mm or less. High reliability can be maintained within the following range. By using such a secondary battery, a lightweight, long-life portable display device can be provided.

[0206] FIG. 20F shows an example of a wristwatch-type mobile information terminal. The mobile information terminal 7200 includes: Housing 7201, display unit 7202, band 7203, buckle 7204, operation button 720 5, and has an input / output terminal 7206, etc.

[0207] The mobile information terminal 7200 is capable of performing functions such as mobile phone calls, e-mails, document browsing and creation, music playback, and internet connection. It can run various applications such as internet communication and computer games. can.

[0208] The display surface of the display unit 7202 is curved, and the display is performed along the curved display surface. The display portion 7202 is provided with a touch sensor, and the screen can be touched with a finger or a stylus. For example, the icon 7 displayed on the display unit 7202 can be operated by touching the You can launch the application by touching 207.

[0209] The operation button 7205 is used to set the time, turn the power on and off, and turn wireless communication on and off. It can perform various functions such as turning on / off the power, turning on / off silent mode, turning on / off power saving mode, etc. For example, the operating system installed in the portable information terminal 7200 can The operating system also allows the functions of the operation buttons 7205 to be freely set.

[0210] In addition, the mobile information terminal 7200 is capable of performing standardized short-range wireless communication. For example, by communicating with a wireless headset, hands-free You can also make calls.

[0211] The portable information terminal 7200 also has an input / output terminal 7206, and can be connected to other information terminals via a connector. Data can be exchanged directly through the input / output terminal 7206. The charging operation can be performed by wireless power supply without going through the input / output terminal 7206. You may go.

[0212] The display portion 7202 of the portable information terminal 7200 includes the secondary battery of one embodiment of the present invention. By using the secondary battery of one embodiment of the present invention, a lightweight and long-life portable information terminal can be provided. For example, the secondary battery 7104 shown in FIG. 20E is curved and inserted into the housing 7201. , or may be incorporated into the band 7203 in a bendable state.

[0213] The mobile information terminal 7200 preferably has a sensor. For example, a fingerprint sensor may be used as the sensor. Human body sensors such as sensors, pulse sensors, and body temperature sensors, as well as touch sensors, pressure sensors, and acceleration sensors It is preferable that a sensor, etc. be installed.

[0214] FIG. 20G shows an example of a wristband-type display device. The display device 7300 includes a display unit 73 04 and includes the secondary battery of one embodiment of the present invention. The unit 7304 may be provided with a touch sensor, and may function as a mobile information terminal. It can also be done as follows.

[0215] The display surface of the display unit 7304 is curved, and images are displayed along the curved display surface. The display device 7300 can also communicate with the display device 7300 by short-distance wireless communication according to a communication standard. You can change the situation.

[0216] The display device 7300 is also equipped with an input / output terminal, and can be directly connected to other information terminals via a connector. It is possible to exchange data and also charge via the input / output terminal. The charging operation may be performed by wireless power supply without using the input / output terminals.

[0217] When the secondary battery of one embodiment of the present invention is used as the secondary battery included in the display device 7300, A lightweight, long-life display device can be provided.

[0218] In addition, examples of mounting a secondary battery in an electronic device will be described with reference to FIGS. 20H, 21, and 22. do.

[0219] By using the secondary battery of one embodiment of the present invention as a secondary battery in everyday electronic devices, it is possible to achieve lighter weight and a longer life. For example, we can provide daily electronic products such as electric toothbrushes, electric shavers, Examples include electric beauty devices, and the secondary batteries for these products are designed to be easy for users to hold. Therefore, there is a demand for a secondary battery that is stick-shaped, small, lightweight, and has a large capacity.

[0220] FIG. 20H is a perspective view of a device also known as a tobacco-containing smoking device (electronic cigarette). At 0H, the electronic cigarette 7500 includes an atomizer 7501 including a heating element; a secondary battery 7504 for supplying power to the cartridge including a liquid supply bottle, a sensor, etc. To enhance safety, the secondary battery 7504 is designed to prevent overcharging and over-discharging. A protection circuit for preventing the secondary battery 7504 from being damaged may be electrically connected to the secondary battery 7504. The secondary battery 7504 has an external terminal so that it can be connected to a charging device. Since this becomes the tip when the device is used, it is desirable that the total length is short and the weight is light. The secondary battery according to one embodiment of the present invention has a high capacity and good cycle characteristics, and therefore can be used for a long period of time. This allows us to provide a small and lightweight electronic cigarette 7500 that can be used for long periods of time.

[0221] Next, an example of a foldable tablet terminal is shown in FIGS. 21A and 21B. The tablet terminal 9600 shown in FIGS. 21A and 21B includes a housing 9630a, a housing 963 0b, a movable part 9640 connecting the housing 9630a and the housing 9630b, a display part 9631a, and A display unit 9631 having a display unit 9631b, switches 9625 to 9627, The display unit 9631 has a flexible fastener 9629 and an operation switch 9628. By using a panel, it is possible to create a tablet terminal with a larger display area. 21A shows the tablet terminal 9600 in an open state, and FIG. 21B shows the tablet terminal The figure shows the 9600 closed.

[0222] The tablet terminal 9600 also includes a housing 9630a and a housing 9630b. The power storage unit 9635 is connected to the housing 9630a through a movable part 9640. It is provided across the body 9630b.

[0223] The entire or a part of the display portion 9631 can be used as a touch panel. By touching the image, text, input form, etc. containing the icon displayed in the area, For example, a keyboard is displayed on the entire surface of the display portion 9631a on the housing 9630a side. keyboard buttons, and characters, images, etc. are displayed on the display unit 9631b on the housing 9630b side. The information may be displayed and used.

[0224] In addition, a keyboard is displayed on the display unit 9631b on the housing 9630b side. The display unit 9631a on the a side may be used to display information such as characters and images. The keyboard display switch button of the touch panel is displayed in the section 9631. Touching the buttons with your finger or a stylus will display a keyboard on the display 9631. It can also be set to

[0225] In addition, the touch panel area of ​​the display unit 9631a on the housing 9630a side and the touch panel area of ​​the display unit 9631b on the housing 9630b side are It is also possible to simultaneously perform touch inputs to the touch panel area of ​​the display portion 9631b.

[0226] In addition, switches 9625 to 9627 are used to operate the tablet terminal 9600. It is not only an interface for switching between various functions, but also an interface for For example, at least one of the switches 9625 to 9627 may be an interface. The other functions as a power on / off switch for the tablet device 9600. Also, for example, at least one of the switches 9625 to 9627 may Ability to switch display orientation, such as portrait or landscape, or black and white or color For example, the switches 9625 to 9627 may have a function of switching between the At least one of them may have a function of adjusting the brightness of the display portion 9631. The brightness of the 9631 is detected by a light sensor built into the tablet terminal 9600. The tablet device can be optimized according to the amount of external light at the time. In addition to sensors, other detection devices such as gyros and acceleration sensors that detect tilt are also available. may be incorporated.

[0227] In addition, in FIG. 21A, the display unit 9631a on the housing 9630a side and the display unit 9631b on the housing 9630b side are 9631b has almost the same display area. The display area of ​​each of the 631b is not particularly limited, and one size may be different from the other. The display quality may be different, for example, one may have a higher resolution than the other. The display panel may also be capable of performing the above.

[0228] FIG. 21B shows the tablet terminal 9600 in a folded state. The terminal 9600 includes a housing 9630, a solar cell 9633, and a DC-DC converter 9636. A charge / discharge control circuit 9634 is also provided. Use a storage battery.

[0229] As mentioned above, the tablet terminal 9600 can be folded in half, so when not in use, The housing 9630a and the housing 9630b can be folded together. By folding the tablet terminal 9600, the display portion 9631 can be protected. Furthermore, the power storage unit 9635 using the secondary battery of one embodiment of the present invention can With its high capacity and good cycle characteristics, this tablet can be used for a long period of time. A mobile terminal 9600 can be provided.

[0230] In addition, the tablet terminal 9600 shown in FIGS. 21A and 21B can be used in various Functions that display important information (still images, videos, text images, etc.), calendars, dates, or times Function to display time and other information on the display, and to operate or edit the information displayed on the display by touch input. Touch input function, function to control processing by various software (programs), etc. It can have.

[0231] The tablet terminal 9600 is equipped with a solar cell 9633 on its surface, which generates power. The solar cell 9 can be used to supply the power to the panel, display unit, video signal processing unit, etc. The power storage unit 9635 can be charged by the power storage unit 9635. The power storage unit 9635 can be configured to perform the power storage efficiently. The use of a pond has the advantage of being able to make the facility smaller.

[0232] The configuration and operation of the charge / discharge control circuit 9634 shown in FIG. 21B are shown in FIG. 21C. A block diagram is shown and explained. FIG. 21C shows a solar cell 9633, a power storage body 9635, a DCD C converter 9636, converter 9637, switches SW1 to SW3, display unit 963 1, the storage battery 9635, the DC-DC converter 9636, the converter 96 37, the switches SW1 to SW3 correspond to the charge / discharge control circuit 9634 shown in FIG. 21B. This is the location.

[0233] First, an example of operation when power is generated by the solar cell 9633 using external light will be described. The power generated by the solar cell is converted into a voltage to charge the storage battery 9635. The converter 9636 increases or decreases the voltage. When power is being used from the battery 9633, the switch SW1 is turned on and the converter 96 37 increases or decreases the voltage to the voltage required for the display unit 9631. When not displaying on 631, SW1 is turned off and SW2 is turned on to charge the capacitor 963. 5 may be configured to charge the battery.

[0234] The solar cell 9633 is shown as an example of a power generating means, but is not particularly limited thereto. Storage by other power generation means such as piezoelectric elements and thermoelectric conversion elements (Peltier elements) For example, the power supply 9635 may be configured to transmit and receive power wirelessly (contactlessly). It is also possible to combine it with a contactless power transmission module that charges the battery, or other charging means. You may do so.

[0235] Another example of electronic equipment is shown in Fig. 22. In Fig. 22, a display device 8000 is a display device according to the present invention. 8 is an example of an electronic device using a secondary battery 8004 according to one embodiment. 8000 corresponds to a display device for receiving TV broadcasts, and includes a housing 8001, a display unit 8002, a speaker, and The secondary battery 8004 according to one embodiment of the present invention includes: The display device 8000 is provided inside a housing 8001. The display device 8000 is supplied with power from a commercial power source. It is also possible to use the power stored in the secondary battery 8004. Therefore, even when power cannot be supplied from a commercial power source due to a power outage or the like, the present invention can be used. The display device 8000 can be used by using the secondary battery 8004 as an uninterruptible power supply. become.

[0236] The display unit 8002 is a display device having a light emitting element such as a liquid crystal display device or an organic EL element in each pixel. Optical devices, electrophoretic displays, DMD (Digital Micromirror Devices) ice), PDP (Plasma Display Panel), FED (Field A semiconductor display device such as a reflective LED (emission display) can be used.

[0237] In addition to TV broadcast reception, display devices are also used for personal computers and advertising displays. This includes all display devices for displaying information, such as:

[0238] In FIG. 22, a stationary lighting device 8100 includes a secondary battery 8 according to one embodiment of the present invention. 8103. Specifically, the lighting device 8100 includes a housing 8101, The device includes a light source 8102, a secondary battery 8103, etc. In FIG. 101 and light source 8102 are installed inside a ceiling 8104. Although illustrated as an example, the secondary battery 8103 may be provided inside the housing 8101. The lighting device 8100 can be supplied with power from a commercial power source, or can be powered by a secondary battery 8103. Therefore, if the supply of power from the commercial power source is interrupted due to a power outage, etc., the power stored in the Even when power is unavailable, the secondary battery 8103 according to one embodiment of the present invention can be used as an uninterruptible power supply. This allows the lighting device 8100 to be used.

[0239] In addition, FIG. 22 illustrates a lighting device 8100 of a fixed type provided on a ceiling 8104. However, in the secondary battery according to one embodiment of the present invention, the side wall 8105, the floor 8106, and the like are not included in the ceiling 8104. It can be used for a fixed lighting device provided in a window 8107 or a desk. It can also be used in upper lighting devices.

[0240] The light source 8102 can be an artificial light source that artificially obtains light using electricity. Specifically, this applies to incandescent lamps, discharge lamps such as fluorescent lamps, and light-emitting devices such as LEDs and organic EL elements. An example of the artificial light source is a light element.

[0241] In FIG. 22, an air conditioner having an indoor unit 8200 and an outdoor unit 8204 8 illustrates an example of an electronic device including a secondary battery 8203 according to one embodiment of the present invention. The indoor unit 8200 includes a housing 8201, an air outlet 8202, a secondary battery 8203, and the like. 2 illustrates an example in which the secondary battery 8203 is provided in the indoor unit 8200. The secondary battery 8203 may be provided in the outdoor unit 8204. The secondary battery 8203 may be provided in both the outdoor units 8204. The power supply can be supplied from a commercial power source or stored in a secondary battery 8203. In particular, both the indoor unit 8200 and the outdoor unit 8204 can use secondary batteries. If 8203 is installed, if power cannot be supplied from the commercial power source due to a power outage, etc. Even in this case, by using the secondary battery 8203 of one embodiment of the present invention as an uninterruptible power supply, Conditioner can be used.

[0242] In addition, Figure 22 shows a separate type air conditioner consisting of an indoor unit and an outdoor unit. However, it is an integrated air conditioner that has the functions of both an indoor unit and an outdoor unit in a single housing. The secondary battery according to one embodiment of the present invention can also be used for the conditioner.

[0243] In FIG. 22, an electric refrigerator-freezer 8300 includes a secondary battery 8304 according to one embodiment of the present invention. Specifically, an electric refrigerator-freezer 8300 includes a housing 8301, It has a refrigerator door 8302, a freezer door 8303, a secondary battery 8304, etc. A secondary battery 8304 is provided inside the housing 8301. The power can be supplied from a commercial power source or can be stored in a secondary battery 8304. Therefore, when power cannot be supplied from the commercial power source due to a power outage, etc. Even in this case, by using the secondary battery 8304 of one embodiment of the present invention as an uninterruptible power supply, 8300 refrigerators and freezers will be available for use.

[0244] Among the above-mentioned electronic devices, high-frequency heating devices such as microwave ovens and electric rice cookers The sub-devices require high power for a short period of time, so the power that cannot be supplied by the commercial power supply is supplemented. By using a secondary battery according to one embodiment of the present invention as an auxiliary power source for supporting This can prevent the commercial power breaker from tripping when using the

[0245] In addition, during times when electronic devices are not in use, the total amount of power that can be supplied by commercial power suppliers is also During the time period when the ratio of the amount of electricity actually used (called the electricity usage rate) is low, By storing power in the secondary battery, it is possible to prevent power usage rates from increasing outside the above time periods. For example, in the case of the electric refrigerator-freezer 8300, when the temperature is low, the refrigerator compartment door 83 02, during the night when the freezer door 8303 is not opened or closed, power is supplied to the secondary battery 8304. Then, as the temperature rises, the refrigerator door 8302 and the freezer door 8303 open and close. During the daytime, when the vehicle is in operation, the secondary battery 8304 is used as an auxiliary power source, thereby reducing the power consumption during the daytime. The rate can be kept low.

[0246] According to one embodiment of the present invention, the cycle characteristics of a secondary battery can be improved, and the reliability can be improved. Furthermore, according to one aspect of the present invention, a high-capacity secondary battery can be obtained. This improves the characteristics of the secondary battery, thereby making the secondary battery itself smaller and lighter. Therefore, the secondary battery according to one embodiment of the present invention can be used in the electronic devices described in this embodiment. By incorporating the above-mentioned in the electronic device, it is possible to make the electronic device lighter and with a longer life span. This embodiment can be implemented in appropriate combination with other embodiments.

[0247] (Fourth embodiment) In this embodiment, an example in which a secondary battery according to one embodiment of the present invention is mounted on a vehicle will be described. It is preferable that the discharge of the secondary battery be controlled in response to temperature by a secondary battery control circuit.

[0248] When a secondary battery is installed in a vehicle, it can be used as a hybrid vehicle (HEV), electric vehicle (EV), or will help realize next-generation clean energy vehicles such as plug-in hybrid vehicles (PHEVs). Cut.

[0249] FIG. 23A illustrates a vehicle using a secondary battery according to one embodiment of the present invention. The automobile 8400 shown is an electric automobile that uses an electric motor as a power source for driving. Alternatively, an electric motor and an engine can be selected and used as the power source for driving. By using one embodiment of the present invention, it is possible to realize a hybrid vehicle with a long driving range. The vehicle 8400 can be realized. The automobile 8400 also has a secondary battery. The secondary battery is The secondary battery modules shown in Figures 8C and 8D are arranged on the floor of the vehicle. In addition, a battery pack made up of multiple secondary batteries as shown in FIG. 11 can be installed on the floor of the vehicle. The secondary battery not only drives the electric motor 8406 but also It can supply power to light emitting devices such as the LED light 8401 and room lights (not shown). Cut.

[0250] In addition, the secondary battery is used for the displays of the car 8400, such as the speedometer and tachometer. The secondary battery can supply power to the navigation system of the automobile 8400. The power supply can be used to power semiconductor devices such as gating systems.

[0251] The automobile 8500 shown in FIG. 23B is a plug-in type secondary battery. It can be charged by receiving power from an external charging facility using a wireless power supply system. FIG. 23B shows a diagram of a secondary battery mounted on a vehicle 8500 being charged from a ground-mounted charging device 8021. 8024 shows the state in which charging is being performed via cable 8022. Charging methods and connector standards are specified by CHAdeMO (registered trademark) and Combo. The charging device 8021 may be a charging station installed in a commercial facility. It may also be a household power source. For example, plug-in technology allows the power source to be connected to an external power supply. The secondary battery 8024 mounted on the automobile 8500 can be charged by the power supply. This can be done by converting AC power to DC power via a conversion device such as an AC / DC converter. can.

[0252] Although not shown, a power receiving device is mounted on the vehicle, and power is supplied contactlessly from a power transmitting device on the ground. In this case, the power transmission device is installed on the road or on the exterior wall. By incorporating this, charging can be done not only when the vehicle is stopped but also while the vehicle is moving. The vehicle may transmit and receive power between them using the same method. A solar cell may be provided in the vehicle so that the secondary battery can be charged when the vehicle is stopped or running. To supply power in the above, an electromagnetic induction method or a magnetic field resonance method can be used.

[0253] 23C shows an example of a two-wheeled vehicle using the secondary battery of one embodiment of the present invention. The scooter 8600 shown in FIG. 1 includes a secondary battery 8602, a side mirror 8601, a turn signal light 86 03. The secondary battery 8602 can supply electricity to the turn signal light 8603. .

[0254] In addition, the scooter 8600 shown in FIG. 23C has a secondary battery 8602 in the storage space under the seat 8604. The secondary battery 8602 can be stored even if the under-seat storage 8604 is small. It can be stored in the under-seat storage 8604. The secondary battery 8602 is removable. When charging, the secondary battery 8602 is brought indoors, charged, and stored before driving. That's fine.

[0255] According to one aspect of the present invention, the cycle characteristics of the secondary battery are improved, and the capacity of the secondary battery is increased. Therefore, the secondary battery itself can be made smaller and lighter. If the battery itself can be made smaller and lighter, it will contribute to reducing the vehicle's weight, which will improve the cruising range. In addition, the secondary battery installed in the vehicle can be used as a power supply source for other purposes. In this case, for example, it is possible to avoid using commercial power sources during peak power demand periods. If we can avoid using commercial power sources during peak power demand periods, we can save energy and This can contribute to reducing carbon dioxide emissions. Since the secondary battery can be used for a long period of time, the amount of rare metals used, including cobalt, can be reduced. It is possible.

[0256] This embodiment mode can be implemented in appropriate combination with other embodiment modes.

[0257] (Embodiment 5) In this embodiment, a transistor applicable to the semiconductor device described in the above embodiment will be described. Specifically, transistors having different electrical characteristics are stacked. This configuration will be described. By adopting this configuration, the degree of freedom in designing a semiconductor device will be increased. In addition, by stacking transistors with different electrical characteristics, The integration level of the device can be increased.

[0258] The semiconductor device shown in FIG. 24 includes a transistor 390, a transistor 500, and a capacitor 60. 26A is a cross-sectional view of the transistor 500 in the channel length direction. FIG. 26B is a cross-sectional view of the transistor 500 in the channel width direction, and FIG. 26C is a cross-sectional view of the transistor 500 in the channel width direction. FIG. 3 is a cross-sectional view of the capacitor 390 in the channel width direction.

[0259] The transistor 500 is an OS transistor. Therefore, for example, the structure of the OS transistor described in the above embodiment can be By using a configuration similar to that of STB 500, it is possible to maintain voltage for a long period of time.

[0260] The semiconductor device described in this embodiment includes a transistor 390, a transistor 400, and a transistor 410 as shown in FIG. The transistor 500 has a capacitance 600. The transistor 500 is connected to the transistor 390. The capacitor 600 is provided above the transistor 390 and the transistor 500. For example, the transistor configuration described in the above embodiment is The same configuration as 390 can be used, and the capacity configuration can be the same as 600. can be done.

[0261] The transistor 390 is disposed on a substrate 311, and includes a conductor 316, an insulator 315, and a substrate A semiconductor region 313 consisting of a part of 311 functions as a source region or a drain region. It has a low resistance region 314a and a low resistance region 314b.

[0262] Transistor 390 is formed on the top surface of semiconductor region 313 and on the channel as shown in FIG. 26C. The side surfaces in the width direction of the panel are covered with the conductor 316 via the insulator 315. By making the transistor 390 a fin type, the effective channel width is increased. This improves the on-state characteristics of the transistor 390. Since the contribution of the field can be increased, the off characteristics of the transistor 390 can be improved. can be done.

[0263] The transistor 390 may be either a p-channel type or an n-channel type. .

[0264] The region where the channel of the semiconductor region 313 is formed and the region nearby, as well as the source region In the low resistance region 314a and the low resistance region 314b which become the gate region or the drain region, It is preferable that the material contains a semiconductor such as a silicon-based semiconductor, and it is preferable that the material contains single crystal silicon. Or, Ge (germanium), SiGe (silicon germanium), GaAs (gas It may be made of materials containing gallium aluminum arsenide (GaAlAs), etc. Silicon with effective mass controlled by applying stress to the crystal lattice and changing the lattice spacing. Alternatively, GaAs and GaAlAs may be used to form a transistor. The Star 390 is a HEMT (High Electron Mobility Transistor) stor) can also be used.

[0265] The low resistance region 314a and the low resistance region 314b are formed by the semiconductor layer applied to the semiconductor region 313. In addition to the conductive material, elements that impart n-type conductivity, such as arsenic and phosphorus, or p-type conductivity, such as boron, are used. It contains an element that provides electrical conductivity.

[0266] The conductor 316 that functions as the gate electrode is made of an element that gives n-type conductivity, such as arsenic or phosphorus. Semiconductor materials such as silicon containing elements that impart p-type conductivity, such as boron, and gold A conductive material such as a metal material, an alloy material, or a metal oxide material can be used.

[0267] Since the work function is determined by the material of the conductor, it is necessary to select the material of the conductor. Specifically, the conductor is made of nitride silicon, and the threshold voltage of the transistor can be adjusted. It is preferable to use materials such as tantalum or tantalum nitride. To achieve this, metal materials such as tungsten and aluminum are used as laminations for the conductors. It is preferable to use tungsten, in particular, in terms of heat resistance.

[0268] The transistor 390 shown in FIG. 24 is an example, and the circuit configuration is not limited to this. An appropriate transistor may be used depending on the structure and driving method. In the case of a unipolar circuit using only transistors, the structure of transistor 390 is as shown in FIG. The structure of the transistor 500 may be the same as that of the OS transistor 500. The transistor 500 will be described in detail later. For example, it can be applied to an n-channel transistor as shown in FIG.

[0269] In this specification, a unipolar circuit is a circuit in which all transistors are of the same polarity. For example, all transistors are n-channel transistors. The circuit can be said to be a unipolar circuit.

[0270] Over the transistor 390, an insulator 320, an insulator 322, an insulator 324, and an insulator The edge members 326 are stacked in order.

[0271] The insulators 320, 322, 324, and 326 may be, for example, an acid. silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, Aluminum oxynitride, aluminum nitride oxide, aluminum nitride, or the like may be used.

[0272] In this specification and the like, silicon oxynitride refers to a material containing more oxygen than nitrogen in its composition. Silicon nitride oxide refers to a material that contains more nitrogen than oxygen. In this specification, aluminum oxynitride refers to a material with a high content. Aluminum oxide nitride is a material that has a higher oxygen content than nitrogen. It refers to a material that contains more nitrogen than oxygen as a constituent.

[0273] The insulator 322 smooths out the steps caused by the transistor 390 and other components provided below it. For example, the top surface of the insulator 322 may have a function as a planarizing film. To improve flatness, the surface is flattened by a planarization process such as chemical mechanical polishing (CMP). It's fine.

[0274] The insulator 324 is also provided with a substrate 311 or a transistor 390 or the like. A film having a barrier property that prevents hydrogen and impurities from diffusing is used in the area where the capacitor 500 is provided. It is preferable that

[0275] An example of a film having a barrier property against hydrogen is silicon nitride formed by CVD. Here, a semiconductor having an oxide semiconductor such as the transistor 500 can be used. The diffusion of hydrogen into the semiconductor element may cause a deterioration in the characteristics of the semiconductor element. A film that suppresses hydrogen diffusion is used between the transistor 500 and the transistor 390. Specifically, the film that suppresses hydrogen diffusion is a film that has a small amount of hydrogen desorption. The membrane.

[0276] The amount of desorption of hydrogen can be analyzed using, for example, thermal desorption spectroscopy (TDS). For example, the amount of hydrogen desorption from the insulator 324 can be measured by TDS analysis when the surface temperature of the film is 5 In the range of 0 to 500°C, the amount of desorption converted to hydrogen atoms is Converted to 10 x 10 15 atoms / cm 2 Less than or equal to 5 x 10 15 at oms / cm 2 The following is fine.

[0277] It is preferable that the insulator 326 has a lower dielectric constant than the insulator 324. For example, The dielectric constant of the insulator 326 is preferably less than 4, more preferably less than 3. The relative dielectric constant of the insulator 326 is preferably 0.7 times or less than the relative dielectric constant of the insulator 324, and more preferably 0.6 times or less. It is more preferable to use a material with a low dielectric constant as the interlayer film to reduce the parasitic capacitance generated between wirings. It can be reduced.

[0278] In addition, the insulators 320, 322, 324, and 326 have capacitances of 60. 0, or the conductor 328 and the conductor 330 connected to the transistor 500 are embedded. The conductors 328 and 330 function as plugs or wiring. In addition, the conductor that functions as a plug or wiring can be used to combine multiple structures. In addition, in this specification and the like, the wiring and the wiring connection In other words, when a part of the conductor functions as a wiring, In some cases, a part of the conductor may function as a plug.

[0279] The materials for each plug and wiring (conductor 328, conductor 330, etc.) include metal materials, Conductive materials such as alloy materials, metal nitride materials, or metal oxide materials are used as single layers or laminated layers. High-melting point materials such as tungsten and molybdenum, which have both heat resistance and electrical conductivity, can be used. It is preferable to use a material such as tungsten. It is preferable to form the wiring layer from a low-resistance conductive material such as aluminum or copper. This can reduce the wiring resistance.

[0280] A wiring layer may be provided on the insulator 326 and the conductor 330. For example, in FIG. In this case, an insulator 350, an insulator 352, and an insulator 354 are stacked in this order. In addition, a conductor 356 is formed on the insulators 350, 352, and 354. The conductor 356 is a plug or wiring that connects to the transistor 390. The conductor 356 is made of the same material as the conductor 328 or the conductor 330. It can be provided using.

[0281] For example, the insulator 350 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator having a barrier property against hydrogen. In particular, it is preferable that the insulating material 350 has a barrier property against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. , transistor 390 and transistor 500 may be separated by a barrier layer; The diffusion of hydrogen from the transistor 390 to the transistor 500 can be suppressed.

[0282] As a conductor having a barrier property against hydrogen, for example, tantalum nitride or the like is used. In addition, by laminating tantalum nitride and highly conductive tungsten, The diffusion of hydrogen from transistor 390 can be suppressed while maintaining the overall conductivity. In this case, the tantalum nitride layer having a barrier property against hydrogen is It is preferable that the insulating body 350 has a structure in which the insulating body 350 is in contact with the insulating body 350.

[0283] A wiring layer may be provided on the insulator 354 and the conductor 356. For example, in FIG. In this case, an insulator 360, an insulator 362, and an insulator 364 are stacked in this order. In addition, a conductor 366 is formed on the insulators 360, 362, and 364. The conductor 366 functions as a plug or wiring. can be provided using a material similar to that of the conductor 328 or the conductor 330.

[0284] For example, the insulator 360 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator having a barrier property against hydrogen. In particular, it is preferable that the insulating material 360 has a barrier property against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. , transistor 390 and transistor 500 may be separated by a barrier layer; The diffusion of hydrogen from the transistor 390 to the transistor 500 can be suppressed.

[0285] A wiring layer may be provided on the insulator 364 and the conductor 366. For example, in FIG. In this case, an insulator 370, an insulator 372, and an insulator 374 are stacked in this order. In addition, a conductor 376 is formed on the insulators 370, 372, and 374. The conductor 376 functions as a plug or wiring. can be provided using a material similar to that of the conductor 328 or the conductor 330.

[0286] For example, the insulator 370 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator having a barrier property against hydrogen. In particular, it is preferable that the insulating material 370 has a barrier property against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. , transistor 390 and transistor 500 may be separated by a barrier layer; The diffusion of hydrogen from the transistor 390 to the transistor 500 can be suppressed.

[0287] A wiring layer may be provided on the insulator 374 and the conductor 376. For example, in FIG. In this case, an insulator 380, an insulator 382, ​​and an insulator 384 are stacked in this order. In addition, a conductor 386 is formed on the insulators 380, 382, ​​and 384. The conductor 386 functions as a plug or wiring. can be provided using a material similar to that of the conductor 328 or the conductor 330.

[0288] For example, the insulator 380 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator having a barrier property against hydrogen. In particular, it is preferable to use an insulator 380 having a barrier property against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. , transistor 390 and transistor 500 may be separated by a barrier layer; The diffusion of hydrogen from the transistor 390 to the transistor 500 can be suppressed.

[0289] In the above, the wiring layer including the conductor 356, the wiring layer including the conductor 366, the conductor 376 The wiring layer including the conductor 386 has been described. The semiconductor device is not limited to this. The number of layers may be three or less, or five or more wiring layers similar to the wiring layer including the conductor 356. That's fine.

[0290] On the insulator 384 are an insulator 510, an insulator 512, an insulator 514, and an insulator 516. are stacked in this order. It is preferable that the insulator 516 is made of a material that has a barrier property against oxygen and hydrogen. It's nice.

[0291] For example, the insulators 510 and 514 may be connected to the substrate 311 or the like, or to the transistor. Hydrogen and impurities diffuse from the region where the capacitor 390 is provided to the region where the transistor 500 is provided. Therefore, it is preferable to use a film having a barrier property that does not cause the insulator 324 to be broken down. It is preferable to use a similar material.

[0292] As an example of a film with barrier properties against hydrogen, silicon nitride formed by CVD is used. Here, a semiconductor element including an oxide semiconductor, such as the transistor 500, The diffusion of hydrogen may deteriorate the characteristics of the semiconductor device. A film that suppresses hydrogen diffusion is used between the transistor 500 and the transistor 390. Specifically, the film that suppresses hydrogen diffusion is a film that desorbs a small amount of hydrogen. .

[0293] In addition, as a film having a barrier property against hydrogen, for example, an insulator 510 and an insulator 514 uses metal oxides such as aluminum oxide, hafnium oxide, and tantalum oxide. It is preferable.

[0294] In particular, aluminum oxide is a material that contains oxygen and hydrogen, which are factors that affect the electrical characteristics of transistors. It has a high blocking effect that prevents impurities such as water from passing through the membrane. Aluminum contains impurities such as hydrogen and moisture during and after the transistor manufacturing process. It is possible to prevent contamination of the transistor 500. It is possible to suppress the release of oxygen from the constituent metal oxide. Suitable for use as a protective film against 500.

[0295] For example, the insulators 512 and 516 may be made of the same material as the insulator 320. In addition, materials with relatively low dielectric constants can be used as insulators. For example, the insulator 512 and the insulator 513 can reduce the parasitic capacitance between the wirings. The edge 516 may be a silicon oxide film, a silicon oxynitride film, or the like.

[0296] In addition, the insulators 510, 512, 514, and 516 are made of conductive materials. 518, and the conductors (for example, conductor 503) that constitute the transistor 500 are filled in. The conductor 518 is connected to the capacitor 600 or the transistor 390. The conductor 518 functions as a plug or wiring. The conductive body 330 can be formed using the same material as the conductive body 330 .

[0297] In particular, the insulator 510 and the conductor 518 in the region in contact with the insulator 514 are oxidized to oxygen, hydrogen, and It is preferable that the conductive material has a barrier property against water. The transistor 390 and the transistor 500 have barrier properties against oxygen, hydrogen, and water. The transistor 390 can be separated by a layer having a hydrogen Diffusion can be suppressed.

[0298] Above the insulator 516 is the transistor 500 .

[0299] As shown in FIGS. 26A and 26B, the transistor 500 includes an insulator 514 and an insulator 516 and the conductor 503 disposed so as to be embedded in the insulator 516 and the conductor 50 3, an insulator 520 disposed on the insulator 520, and an insulator 522 disposed on the insulator 520. An insulator 524 is disposed on the insulator 522, and an oxide 53 is disposed on the insulator 524. 530a, oxide 530b disposed on oxide 530a, and oxide 530b disposed on oxide 530b. Conductor 542a and conductor 542b are spaced apart, and conductor 542a and conductor 542b, and an opening is formed between and overlapping the conductors 542a and 542b. The insulating layer 580 is formed by the oxide 530c disposed on the bottom and side surfaces of the opening. an insulator 550 disposed on the surface of the insulator 550; and a conductor 56 disposed on the surface of the insulator 550. 0 and .

[0300] As shown in FIGS. 26A and 26B, the oxide 530a, the oxide 530b, and the conductor 5 42a, and an insulator 544 may be disposed between the conductor 542b and the insulator 580. 26A and 26B, the conductor 560 is preferably formed in the insulator 550. The conductor 560a is provided on the side of the conductor 560a, and the conductor 560b is provided so as to be embedded inside the conductor 560a. 26A and 26B, it is preferable to have a conductor 560b. 5, an insulator 574 is disposed on the insulator 580, the conductor 560, and the insulator 550. It is preferable that:

[0301] In the following, the oxide 530a, the oxide 530b, and the oxide 530c will be collectively referred to as oxide 530a, oxide 530b, and oxide 530c. It is sometimes called oxide 530.

[0302] In the transistor 500, an oxide is formed in the region where the channel is formed and in the vicinity thereof. 5 shows a structure in which three layers of oxide 530a, oxide 530b, and oxide 530c are stacked. However, the present invention is not limited to this. For example, a single layer of oxide 530b, an oxide Two-layer structure of oxide 530b and oxide 530a, two-layer structure of oxide 530b and oxide 530c Alternatively, a stacked structure of four or more layers may be provided. Although the conductor 560 is shown as a two-layer laminate structure, the present invention is not limited to this. For example, the conductor 560 may have a single layer structure or a laminated structure of three or more layers. The transistor 500 shown in FIGS. 24, 25, 26A, and 26B is an example. However, it is not limited to this structure, and appropriate transistors can be used depending on the circuit configuration and driving method. That's fine.

[0303] Here, conductor 560 serves as the gate electrode of transistor 500, and conductor 54 2a and the conductor 542b function as a source electrode and a drain electrode, respectively. As described above, the conductor 560 is inserted through the opening in the insulator 580 and the conductors 542a and 542b. The conductor 560 is formed so as to be embedded in the region sandwiched between the conductors 542a and 542b. , and the placement of the conductor 542b is selected to be self-aligned with the opening in the insulator 580. That is, in the transistor 500, the gate electrode is disposed between the source electrode and the drain electrode. Therefore, the conductor 560 can be arranged in a self-aligned manner. Since the transistor 500 can be formed without providing a gate electrode, the area occupied by the transistor 500 can be reduced. This allows for miniaturization and high integration of semiconductor devices.

[0304] Furthermore, the conductor 560 is self-aligned in the region between the conductors 542a and 542b. Since the conductor 560 is formed, the area where the conductor 560 overlaps with the conductor 542a or the conductor 542b is As a result, the conductor 560, the conductor 542a, and the conductor 542b Therefore, the parasitic capacitance formed between the transistor 500 and the This improves the switching speed and provides high frequency characteristics.

[0305] Conductor 560 may function as a first gate (also called a top gate) electrode. The conductor 503 also functions as a second gate (also called a bottom gate) electrode. In this case, the voltage applied to the conductor 503 may be different from the voltage applied to the conductor 560. The threshold voltage of the transistor 500 is controlled by changing them independently without linking them together. In particular, applying a negative voltage to the conductor 503 turns on the transistor 50 It is possible to increase the threshold voltage of 0 to be higher than 0V and reduce the off-current. Therefore, applying a negative voltage to the conductor 503 increases the current flowing through the conductor 560 compared to when no voltage is applied. The drain current can be reduced when the applied voltage is 0V.

[0306] The conductor 503 is arranged so as to have an overlapping area with the oxide 530 and the conductor 560. As a result, when a voltage is applied to the conductor 560 and the conductor 503, the conductor 5 The electric field generated from the conductor 503 is connected to the electric field generated from the oxide 530. In this specification and the like, the first gate electrode can cover a channel forming region formed thereon. and a transistor that electrically surrounds the channel forming region by the electric field of the second gate electrode. The structure of the star is called a surrounded channel (s-channel) structure. cormorant.

[0307] The conductor 503 has the same structure as the conductor 518, and the insulator 514 and the insulator Conductor 503a is formed in contact with the inner wall of the opening of 516, and conductor 503b is formed further inside. In the transistor 500, the conductor 503a and the conductor 503b However, the present invention is not limited to this. For example, The conductor 503 may be provided as a single layer or a stacked structure of three or more layers.

[0308] Here, the conductor 503a prevents the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms. It is preferable to use a conductive material that has the function of suppressing the impurities (i.e., the impurities are less likely to permeate). Alternatively, the function of suppressing the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.) It is preferable to use a conductive material that has the above-mentioned function (which is difficult for oxygen to permeate). In the specification etc., the function of suppressing the diffusion of impurities or oxygen means the function of suppressing the diffusion of the above impurities or oxygen. The function is to suppress the diffusion of any one or all of the above oxygen.

[0309] For example, the conductor 503a has a function of suppressing the diffusion of oxygen, so that the conductor 50 This can prevent 3b from being oxidized and the electrical conductivity from decreasing.

[0310] When the conductor 503 also functions as a wiring, the conductor 503b is made of tungsten, copper, or the like. It is preferable to use a conductive material having high conductivity, such as aluminum or aluminum-based. In this case, the conductor 503a is not necessarily provided. Although the layer is illustrated, it may be a laminated structure, for example, titanium or titanium nitride and the above conductive material. It may also be laminated with other materials.

[0311] The insulators 520, 522, and 524 function as a second gate insulating film. Possess the ability.

[0312] Here, the insulator 524 in contact with the oxide 530 has more oxygen than the stoichiometric composition. It is preferable to use an insulator that contains a large amount of oxygen. That is, the insulator 524 has an excess oxygen region. It is preferable that the insulator containing such excess oxygen is formed in the oxide 530. By providing the oxide 530 in contact with the oxide 530, oxygen vacancies in the oxide 530 are reduced, and the signal quality of the transistor 500 is improved. The reliability can be improved.

[0313] As an insulator having an excess oxygen region, specifically, an oxide in which a part of oxygen is released by heating is used. It is preferable to use oxide materials. Oxides that release oxygen when heated are called TDS (Th Thermal Desorption Spectroscopy (DSS) analysis revealed that the oxygen atoms The converted amount of oxygen desorption is 1.0 x 10 18 atoms / cm 3 or more, preferably 1.0 x10 19 atoms / cm 3 More preferably, 2.0 × 10 19 atoms / c m 3 or more, or 3.0 x 10 20 atoms / cm 3 The oxide film is as described above. The surface temperature of the film during the TDS analysis is 100°C or higher and 700°C or lower, or The temperature is preferably in the range of 00°C or higher and 400°C or lower.

[0314] In addition, the insulator having the excess oxygen region and the oxide 530 are brought into contact with each other and subjected to heat treatment. One or more of microwave treatment and RF treatment may be performed. By this, water or hydrogen in the oxide 530 can be removed. In 30, a reaction occurs in which the VoH bond is broken, in other words, "V O H→V O +H The hydrogen generated at this time is Some of them combine with oxygen to form H2O, forming oxide 530 or an insulator near oxide 530. In addition, some of the hydrogen may be removed from the conductor 542 (conductor 542a and The electrons may be diffused or captured (also called gettered) in the conductor 542b).

[0315] The microwave treatment may be carried out using, for example, an apparatus having a power source that generates high-density plasma. Alternatively, it is preferable to use an apparatus having a power source that applies RF to the substrate side. By using a gas containing oxygen and high density plasma, high density oxygen radicals are generated. In addition, by applying RF to the substrate side, high density plasma is generated. The generated oxygen radicals are efficiently transported into the oxide 530 or the insulator near the oxide 530. The microwave treatment can be carried out at a pressure of 133 Pa or more, preferably The pressure should be 200 Pa or more, and more preferably 400 Pa or more. For example, oxygen and argon are used as gases introduced into the treatment device, and the oxygen flow rate is (O2 / (O2+Ar)) is set to 50% or less, preferably 10% to 30%. .

[0316] In addition, during the manufacturing process of the transistor 500, the surface of the oxide 530 is exposed. The heat treatment is preferably performed at a temperature of, for example, 100° C. or higher and 450° C. or lower. More preferably, the temperature is 350° C. or higher and 400° C. or lower. or an inert gas atmosphere, or an oxidizing gas of 10 ppm or more, 1% or more, or 1 For example, it is preferable to carry out the heat treatment in an oxygen atmosphere. By this, oxygen is supplied to the oxide 530, and oxygen vacancies (V O ) can be reduced. The heat treatment may be carried out under reduced pressure or in an atmosphere of nitrogen gas or inert gas. After heat treatment in an oxidizing gas atmosphere, 10ppm of oxidizing gas was added to compensate for the oxygen that was removed. The oxidation may be carried out in an atmosphere containing 1% or more, 1% or more, or 10% or more. After heat treatment in an atmosphere containing 10 ppm or more, 1% or more, or 10% or more, The heat treatment may be performed in a nitrogen gas or inert gas atmosphere.

[0317] In addition, by performing an oxygen addition treatment on the oxide 530, oxygen vacancies in the oxide 530 are filled with oxygen. In other words, "V O +O→null” reaction. Furthermore, the hydrogen remaining in the oxide 530 and the hydrogen supplied to the oxide 530 can be By reacting with oxygen, the hydrogen can be removed as H2O (dehydration). As a result, the hydrogen remaining in the oxide 530 recombines with the oxygen vacancies, forming V O H-shaped This can prevent the formation of

[0318] Also, if the insulator 524 has an excess oxygen region, the insulator 522 may be oxygen-rich (e.g., It has the function of suppressing the diffusion of oxygen (element atoms, oxygen molecules, etc.) (the oxygen mentioned above is less likely to permeate) preferable.

[0319] The insulator 522 has a function of suppressing the diffusion of oxygen and impurities, and the oxide 530 The oxygen contained in the conductor 503 does not diffuse to the insulator 520 side, which is preferable. This can prevent the insulator 524 and the oxide 530 from reacting with oxygen.

[0320] The insulator 522 may be, for example, aluminum oxide, hafnium oxide, aluminum and hafnium oxide. Oxides containing hafnium (hafnium aluminate), tantalum oxide, zirconium oxide, Lead zirconate titanate (PZT), strontium titanate (SrTiO3), or ( Insulators containing so-called high-k materials such as Ba,Sr)TiO3 (BST) are deposited as single layers or As transistors become smaller and more highly integrated, Thinning of the gate insulating film may cause problems such as leakage current. By using high-k materials as functional insulators, the physical thickness can be maintained while This makes it possible to reduce the gate voltage during operation.

[0321] In particular, it has the function of suppressing the diffusion of impurities and oxygen (the oxygen is difficult to penetrate) ) Insulators containing oxides of one or both of aluminum and hafnium, which are insulating materials It is recommended to use an insulator containing oxides of either or both aluminum and hafnium. , aluminum oxide, hafnium oxide, or oxides containing aluminum and hafnium It is preferable to use materials such as hafnium aluminate. When the insulator 522 is formed, the insulator 522 prevents oxygen from being released from the oxide 530 and prevents the transistor from being turned on. It functions as a layer that prevents impurities such as hydrogen from entering the oxide 530 from the periphery of the sta 500. do.

[0322] Alternatively, for example, aluminum oxide, bismuth oxide, germanium oxide, or the like may be added to these insulators. um, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, Zirconium oxide may be added, or these insulators may be nitrided. Silicon oxide, silicon oxynitride, or silicon nitride may be laminated on the insulator. stomach.

[0323] The insulator 520 is preferably thermally stable. For example, silicon oxide and Silicon oxide nitride and silicon oxynitride are suitable because they are thermally stable. By combining the insulator with silicon oxide or silicon oxynitride, thermally stable and It is possible to obtain an insulator 520 having a laminated structure with a high relative dielectric constant.

[0324] In the transistor 500 shown in FIGS. 26A and 26B, the second layer is a three-layer laminate structure. As the gate insulating film, an insulator 520, an insulator 522, and an insulator 524 are shown. However, the second gate insulating film may have a single layer, two layers, or a laminated structure of four or more layers. In this case, it is not limited to a laminated structure made of the same material, but may be a laminated structure made of different materials. Good too.

[0325] The transistor 500 includes an oxide 530 including a channel formation region, and an oxide semiconductor It is preferable to use a functional metal oxide. For example, the oxide 530 is In-M- Zn oxide (element M is aluminum, gallium, yttrium, copper, vanadium, beryl Sodium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, la tantalum, tungsten, or magnesium It is preferable to use a metal oxide such as one or more selected from the group consisting of oxides 5 and 6. The In-M-Zn oxide that can be applied as 30 is CAAC-OS (C-Axls Ali gned Crystal Oxide Semiconductor), CAC-OS (Cloud-Aligned Composite Oxide Semiconductor The oxide 530 is preferably an In-Ga oxide, an In The CAAC-OS and CAC-OS will be described later.

[0326] Furthermore, it is preferable to use a metal oxide with a low carrier concentration for the transistor 500. When the carrier concentration of the metal oxide is reduced, the impurity concentration in the metal oxide is reduced. In this specification and the like, the impurity concentration is low and the defect level density is low. A low level density is called high purity intrinsic or substantially high purity intrinsic. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, Examples include silicon and silicon dioxide.

[0327] In particular, hydrogen contained in metal oxides reacts with oxygen that bonds with metal atoms to form water. In this case, oxygen vacancies may be formed in the metal oxide. When an oxygen atom is introduced, the oxygen vacancy and hydrogen bond to form V O May form H. V O H is for Donna It functions as a carrier and electrons are generated. It may bond with oxygen, which bonds with atoms, to generate electrons, which are carriers. However, transistors using metal oxides containing a large amount of hydrogen have normally-on characteristics. In addition, hydrogen in metal oxides is easily moved by stress such as heat and electric field. However, if the metal oxide contains a large amount of hydrogen, the reliability of the transistor may be deteriorated. In one embodiment of the present invention, V in the oxide 530 O Reduce H as much as possible and use high purity intrinsic It is preferable to make it substantially intrinsic or of high purity. O Gold with sufficiently reduced H To obtain metal oxides, impurities such as water and hydrogen must be removed from the metal oxides (dehydration, This is sometimes referred to as oxidation treatment.) and oxygen deficiency is compensated for by supplying oxygen to the metal oxide. It is important to note that this is sometimes referred to as oxygenation treatment. O Impurities such as H are not sufficiently By using reduced metal oxide in the channel formation region of a transistor, stable electrical conductivity can be achieved. Properties can be given.

[0328] The defect where hydrogen has entered the oxygen vacancy can function as a donor for the metal oxide. However, it is difficult to quantitatively evaluate the defects. Therefore, in this specification, metal As a parameter of the oxide, instead of donor concentration, we use the capacitance assuming a state where no electric field is applied. In other words, the "carrier concentration" described in this specification and the like is This can sometimes be rephrased as "energy concentration."

[0329] Therefore, when a metal oxide is used for the oxide 530, the hydrogen in the metal oxide should be as low as possible. Specifically, in the case of metal oxides, secondary ion mass spectrometry (SIMS: Secondary Ion Mass Spectrometry) The resulting hydrogen concentration is 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 less than 5 × 10 18 atoms / cm 3 Less than, more Preferably 1 x 10 18 atoms / cm 3 Impurities such as hydrogen are sufficiently reduced. By using this metal oxide in the channel formation region of a transistor, stable electrical characteristics can be achieved. It can be granted.

[0330] In addition, when a metal oxide is used for the oxide 530, the capacitance of the metal oxide in the channel formation region is Rear density is 1 x 10 18 cm -3 Preferably, it is 1×10 or less. 17 cm -3 Not yet It is more preferable that the 16 cm -3 more preferably less than 1×10 13 cm -3 More preferably, it is less than 1×10 12 cm -3 Less than It is more preferable that the lower limit of the carrier concentration of the metal oxide in the channel formation region is There is no particular limitation on the -9 cm -3 It can be said that:

[0331] When a metal oxide is used for the oxide 530, the conductor 542 (the conductor 542a and When the conductor 542b) comes into contact with the oxide 530, the oxygen in the oxide 530 is transferred to the conductor 54 2, the conductor 542 may be oxidized. It is highly likely that the conductivity of the conductor 542 will decrease. The diffusion of oxygen into the oxide 530 can be expressed as the absorption of oxygen by the conductor 542. can be done.

[0332] Furthermore, oxygen in the oxide 530 is converted into the conductor 542 (the conductor 542a and the conductor 542b). Diffusion into the oxide 530b and between the conductor 542a and the oxide 530b causes A different layer may be formed between the oxide 530b and the conductor 542. Since the layer contains a large amount of silicon, it is presumed that the layer has insulating properties. The three-layer structure of the hetero layer and the oxide 530b is a three-layer structure consisting of a metal, an insulator, and a semiconductor. It can be considered as MIS (Metal-Insulator-Semiconductor) This structure is sometimes called a diode junction structure, or a MIS structure. .

[0333] The different layer is not limited to being formed between the conductor 542 and the oxide 530b. For example, a heterogeneous layer may be formed between the conductor 542 and the oxide 530c. Alternatively, between the conductor 542 and the oxide 530b, and between the conductor 542 and the oxide 530c. may be formed in between.

[0334] In addition, the metal oxide that functions as a channel forming region in the oxide 530 has a band It is preferable to use a material with a gap of 2 eV or more, preferably 2.5 eV or more. As shown in Fig. 1, by using a metal oxide with a wide band gap, the off-state current of a transistor can be reduced. can be reduced.

[0335] The oxide 530 has an oxide 530a under the oxide 530b, so that the oxide 530a The diffusion of impurities from structures formed below the oxide 530b is suppressed. In addition, by having the oxide 530c on the oxide 530b, the oxide 530 The structure formed above the oxide 530c is prevented from diffusing impurities into the oxide 530b. It is possible.

[0336] The oxide 530 has a laminated structure of oxide layers with different atomic ratios of each metal atom. Specifically, in the metal oxide used for the oxide 530a, it is preferable that the constituent elements The atomic ratio of element M in the metal oxide used for oxide 530b is In addition, in the metal oxide used for the oxide 530a, The atomic ratio of element M to In in the metal oxide used for oxide 530b is It is preferable that the atomic ratio of element M to n is larger than that of element n. In the metal oxide, the atomic ratio of In to the element M is In the oxide, the atomic ratio of In to the element M is preferably larger than that of In. 530c is a metal oxide that can be used for oxide 530a or oxide 530b. You can be there.

[0337] Specifically, the oxide 530a is composed of In:Ga:Zn=1:3:4 [atomic ratio], Alternatively, a metal oxide having an atomic ratio of 1:1:0.5 may be used. In:Ga:Zn=4:2:3 [atomic ratio] or 1:1:1 [atomic ratio] The oxide 530c may be a metal oxide of In:Ga:Zn=1:3:4. [atomic ratio], Ga:Zn=2:1 [atomic ratio], or Ga:Zn=2:5 [atomic ratio] In addition, a specific example of the oxide 530c having a stacked structure is as follows: The atomic ratios are In:Ga:Zn=4:2:3 and In:Ga:Zn=1:3:4. [Atomic ratio] Ga:Zn=2:1 [Atomic ratio] and In:Ga:Zn=4 :2:3 [atomic ratio], Ga:Zn=2:5 [atomic ratio], and In:Ga: Zn=4:2:3 [atomic ratio], gallium oxide and In:Ga:Zn=4: Examples include a layered structure with an atomic ratio of 2:3.

[0338] The energy of the conduction band minimum of the oxide 530a and the oxide 530c is It is preferable that the energy of the conduction band minimum of 0b is higher than that of the oxide. The electron affinity of the oxide 530a and the oxide 530c is smaller than the electron affinity of the oxide 530b. It is preferable that

[0339] Here, at the junctions of oxide 530a, oxide 530b, and oxide 530c, The energy level of the conduction band minimum changes gradually. The energy level of the conduction band minimum at the junction of the oxide 530b and the oxide 530c is It can also be said that the oxide layer is continuously changed or continuously bonded. At the interface between oxide 530a and oxide 530b, and at the interface between oxide 530b and oxide 530c In this case, the defect level density of the mixed layer formed in the step (b) is preferably reduced.

[0340] Specifically, oxide 530a and oxide 530b, and oxide 530b and oxide 530 c has a common element other than oxygen (as the main component), resulting in a mixture with a low defect level density For example, if the oxide 530b is an In-Ga-Zn oxide, The oxide 530a and the oxide 530c are In-Ga-Zn oxide and Ga-Zn oxide. It is preferable to use gallium oxide or the like.

[0341] At this time, the main path of the carriers is the oxide 530b. By configuring the oxide 530c as described above, the interface between the oxide 530a and the oxide 530b and In addition, the defect state density at the interface between oxide 530b and oxide 530c can be reduced. Therefore, the influence of interface scattering on carrier conduction is reduced, and the transistor 50 0 provides a high on-current.

[0342] The semiconductor material that can be used for the oxide 530 is not limited to the above-mentioned metal oxides. The oxide 530 is a semiconductor material having a band gap (a zero-gap semiconductor). For example, semiconductors of elemental elements such as silicon, gallium arsenide, Compound semiconductors such as silicon, layered materials (atomic layer materials, two-dimensional materials, etc.) that function as semiconductors It is preferable to use a material such as a silicon dioxide film as a semiconductor material. It is preferable to use a material like this as the semiconductor material.

[0343] In this specification, the term "layered material" is a general term for a group of materials having a layered crystal structure. The layered crystal structure is formed by covalent and ionic bonds, and the layers are The structure is made up of layers of molecules that are stacked via bonds weaker than covalent or ionic bonds, such as ionic bonds. Layered materials have high electrical conductivity within the unit layer, that is, high two-dimensional electrical conductivity. A material that functions as a semiconductor and has high two-dimensional electrical conductivity is used for the channel formation region. This makes it possible to provide a transistor with a large on-state current.

[0344] Layered materials include graphene, silicene, and chalcogenides. is a compound containing chalcogen. Chalcogen is also a general term for elements belonging to Group 16. and includes oxygen, sulfur, selenium, tellurium, polonium, and livermorium. Chalcogenides include transition metal chalcogenides and group 13 chalcogenides. .

[0345] The oxide 530 may be, for example, a transition metal chalcogenide that functions as a semiconductor. Specific examples of transition metal chalcogenides that can be used as the oxide 530 include: These include molybdenum sulfide (typically MoS2), molybdenum selenide (typically MoS e2), molybdenum telluride (typically MoTe2), tungsten sulfide (typically W S2), tungsten selenide (typically WSe2), tungsten telluride (typically is WTe2), hafnium sulfide (typically HfS2), hafnium selenide (typically HfSe2), zirconium sulfide (typically ZrS2), zirconium selenide (typically Typical examples include ZrSe2).

[0346] On the oxide 530b, a conductor 542 is formed, which functions as a source electrode and a drain electrode. The conductors 542a and 542b are provided as follows: are aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum Niobium, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium Strontium, Beryllium, Indium, Ruthenium, Iridium, Strontium, Lanthanum or an alloy containing the above metal element, or the above metal element It is preferable to use an alloy in which the above-mentioned materials are combined. For example, tantalum nitride, titanium nitride, tantalum tungsten, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum , ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum It is preferable to use oxides containing tantalum and nickel. , nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide Ruthenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel Oxides containing fluorine are conductive materials that are resistant to oxidation or that maintain conductivity even after absorbing oxygen. Furthermore, metal nitride films such as tantalum nitride are highly resistant to hydrogen and oxygen. This is preferable because it has a barrier property.

[0347] In addition, although the conductor 542a and the conductor 542b are shown as single-layer structures in FIG. Alternatively, a laminated structure of two or more layers may be used. For example, a tantalum nitride film and a tungsten film may be laminated. Alternatively, a titanium film and an aluminum film may be stacked. A two-layer structure in which an aluminum film is laminated on a copper-magnesium-aluminum alloy film, and a copper film on a copper-magnesium-aluminum alloy film a two-layer structure in which a copper film is laminated on a titanium film; a two-layer structure in which a copper film is laminated on a tungsten film A two-layer structure may also be used.

[0348] Also, a titanium film or titanium nitride film and an aluminum film overlaid on the titanium film or titanium nitride film are used. An aluminum film or a copper film is laminated, and a titanium film or a titanium nitride film is further formed thereon. A three-layer structure consisting of a molybdenum film or molybdenum nitride film and a molybdenum film or molybdenum nitride film. An aluminum or copper film is layered on top of the molybdenum film, and then a molybdenum or There are three-layer structures in which indium oxide, tin oxide or molybdenum nitride are formed. Alternatively, a transparent conductive material containing zinc oxide may be used.

[0349] As shown in FIG. 26A, the conductor 542a (conductor 542b) of the oxide 530 At the interface and its vicinity, a region 543a and a region 543b are formed as low resistance regions. In this case, the region 543a functions as either a source region or a drain region. The region 543b functions as the other of the source region and the drain region. A channel forming region is formed in the region sandwiched between region 543a and region 543b.

[0350] By providing the conductor 542a (conductor 542b) so as to be in contact with the oxide 530, The oxygen concentration in the region 543a (region 543b) may decrease. The metal contained in the conductor 542a (conductor 542b) and the oxide 530 are In such a case, a metal compound layer containing the component may be formed in the region 543a (region The carrier concentration in the region 543a (region 543b) increases, and the region 543a (region 543b) becomes a low resistance region. become.

[0351] The insulator 544 is provided to cover the conductor 542a and the conductor 542b. The insulator 544 prevents oxidation of the conductive material 542a and the conductive material 542b. It may be provided to cover the side of object 530 and to be in contact with insulator 524.

[0352] Insulator 544 includes hafnium, aluminum, gallium, yttrium, and zirconium. Smoke, tungsten, titanium, tantalum, nickel, germanium, neodymium, lanthanum , magnesium, etc., and Silicon nitride oxide or silicon nitride may also be used as the insulator 544. It is possible.

[0353] In particular, the insulator 544 may be an oxide of aluminum or hafnium or both. Insulators containing aluminum oxide, hafnium oxide, or aluminum and It is preferable to use an oxide containing hafnium (hafnium aluminate). Hafnium aluminate has higher heat resistance than hafnium oxide film. This is preferable because it is difficult to crystallize during heat treatment at room temperature. The body 542b is made of a material that is resistant to oxidation or does not significantly decrease in conductivity even when it absorbs oxygen. In this case, the insulator 544 is not an essential component. That's fine.

[0354] By including the insulator 544, impurities such as water and hydrogen contained in the insulator 580 can be removed. Diffusion into oxide 530b through oxide 530c and insulator 550 is suppressed. In addition, the conductor 560 may be oxidized due to excess oxygen contained in the insulator 580. can be suppressed.

[0355] The insulator 550 functions as a first gate insulating film. It is preferable that the insulator 550 is disposed so as to be in contact with the inside (top and side surfaces) of the insulator 550. Similar to the insulator 524 described above, the insulator contains excess oxygen and releases oxygen when heated. It is preferable to form it using an edge body.

[0356] Specifically, silicon oxide having excess oxygen, silicon oxynitride, silicon nitride oxide, Silicon nitride, fluorine-doped silicon oxide, carbon-doped silicon oxide, carbon, and Silicon oxide doped with nitrogen and silicon oxide having vacancies can be used. In particular, silicon oxide and silicon oxynitride are preferred because they are stable to heat.

[0357] An insulator that releases oxygen when heated is attached to the top surface of the oxide 530c as the insulator 550. By providing the oxide 530b as the insulating layer, the insulator 550 can be electrically connected to the oxide 530b through the oxide 530c. In addition, as with the insulator 524, oxygen can be effectively supplied to the channel forming region. It is preferable that the concentration of impurities such as water or hydrogen in the insulator 550 is reduced. The thickness of 550 is preferably 1 nm or more and 20 nm or less.

[0358] In addition, in order to efficiently supply excess oxygen contained in the insulator 550 to the oxide 530, A metal oxide may be provided between the body 550 and the conductor 560. The metal oxide may be an insulator. It is preferable that the electrode 550 has a function of suppressing oxygen diffusion from the electrode 550 to the conductor 560. By providing a metal oxide having the function of suppressing diffusion, the insulator 550 is transferred to the conductor 560. In other words, the amount of excess oxygen supplied to the oxide 530 is prevented from decreasing. In addition, oxidation of the conductor 560 due to excess oxygen can be suppressed. As the metal oxide, any material that can be used for the insulator 544 may be used.

[0359] Note that the insulator 550 may have a stacked structure similar to the second gate insulating film. As transistors become more miniaturized and highly integrated, the gate insulating film becomes thinner, which reduces leakage current and other Therefore, the insulator that functions as the gate insulating film is By using a laminated structure of -k material and thermally stable material, the physical film thickness is maintained while This makes it possible to reduce the gate voltage during transistor operation. A laminated structure with a high relative dielectric constant can be obtained.

[0360] The conductor 560 functioning as the first gate electrode has a two-layer structure in FIGS. 26A and 26B. However, it may have a single layer structure or a laminated structure of three or more layers.

[0361] The conductor 560a is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, or a nitrogen oxide molecule. (N2O, NO, NO2, etc.) Conductive material with the function of suppressing the diffusion of impurities such as copper atoms It is preferable to use a material containing at least oxygen (for example, oxygen atoms, oxygen molecules, etc.). It is preferable to use a conductive material that has the function of suppressing the diffusion of the conductive material 560a. The oxygen contained in the insulator 550 has a function of suppressing the diffusion of oxygen, and thus the conductor It is possible to prevent the oxidation of 560b and the decrease in conductivity. Examples of conductive materials having this function include tantalum, tantalum nitride, ruthenium, and It is preferable to use ruthenium oxide or ruthenium oxide as the conductor 560a. In this case, the conductor 560b is made of an oxide semiconductor that can be applied to the semiconductor device 30. By forming the film by the tarpaulin method, the electrical resistance value of the conductor 560a is reduced, and the conductor becomes a conductor. This can be called an OC (Oxide Conductor) electrode. .

[0362] The conductor 560b is a conductive material mainly composed of tungsten, copper, or aluminum. In addition, since the conductor 560b also functions as a wiring, It is preferable to use a conductor with high conductivity, such as tungsten, copper, or aluminum. The conductor 560b can be made of a conductive material containing aluminum as a main component. For example, it may have a laminated structure of titanium or titanium nitride and the above conductive material. good.

[0363] The insulator 580 is disposed on the conductor 542a and the conductor 542b via the insulator 544. The insulator 580 preferably has an excess oxygen region. 80 includes silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and fluorine. Nitrogen-doped silicon oxide, carbon-doped silicon oxide, carbon- and nitrogen-doped silicon oxide It is preferable that the material be silicon oxide, silicon oxide having pores, or resin. Silicon oxide and silicon oxynitride are preferred because they are thermally stable. Silicon oxide and silicon oxide with vacancies easily form excess oxygen regions in later processes. This is preferable because it can

[0364] The insulator 580 preferably has an excess oxygen region. Oxygen is released upon heating. The insulator 580 is provided so as to have a region in contact with the oxide 530c. The oxygen in the oxide 530 is efficiently converted to oxide 530a and oxide 530b through oxide 530c. In addition, the concentration of impurities such as water or hydrogen in the insulator 580 is reduced. It is preferable that

[0365] The opening in the insulator 580 is formed to overlap the region between the conductor 542a and the conductor 542b. As a result, the conductor 560 is connected to the opening of the insulator 580 and the conductor 542a. It is formed so as to be embedded in the region sandwiched between the bodies 542b.

[0366] In miniaturizing semiconductor devices, it is required to shorten the gate length. It is necessary to prevent the conductivity of the conductor 60 from decreasing. In this embodiment, the conductor 560 may have a shape with a high aspect ratio. The conductor 560 is provided so as to be embedded in the opening of the insulator 580. Even in a high-ratio shape, the conductor 560 is formed without collapsing during the process. It is possible.

[0367] The insulator 574 is disposed on the top surface of the insulator 580, the top surface of the conductor 560, and the top surface of the insulator 550. The insulator 574 is preferably provided in contact with the surface. Thus, an excess oxygen region can be provided in the insulator 550 and the insulator 580. This allows oxygen to be supplied into the oxide 530 from the excess oxygen region.

[0368] For example, the insulator 574 may be hafnium, aluminum, gallium, yttrium, Zirconium, tungsten, titanium, tantalum, nickel, germanium, or magnesium Metal oxides containing one or more metals selected from the group consisting of cadmium, ... do.

[0369] In particular, aluminum oxide has a high barrier property and is a thin film of 0.5 nm to 3.0 nm. Therefore, the diffusion of hydrogen and nitrogen can be suppressed even if sputtering is performed. The aluminum oxide film formed by this method is both an oxygen source and a barrier to impurities such as hydrogen. It can also function as a membrane.

[0370] In addition, it is preferable to provide an insulator 581 that functions as an interlayer film over the insulator 574. The insulator 581 has a low concentration of impurities such as water or hydrogen in the film, similar to the insulator 524. It is preferable that it is reduced.

[0371] Also, the insulating material 581, the insulating material 574, the insulating material 580, and the insulating material 544 are formed. The conductor 540a and the conductor 540b are disposed in the opening. The conductor 540a and the conductor 540b are provided opposite each other with the conductor 560 in between. 0b has the same configuration as conductor 546 and conductor 548, which will be described later.

[0372] An insulator 582 is provided on the insulator 581. The insulator 582 is resistant to oxygen and hydrogen. Therefore, the insulator 582 is preferably made of an insulating material. The insulator 582 may be made of the same material as the insulator 514. For example, aluminum oxide may be used. It is preferable to use metal oxides such as tantalum oxide, hafnium oxide, and the like.

[0373] In particular, aluminum oxide is highly resistant to oxygen and water, which can cause fluctuations in the electrical characteristics of transistors. It has a high blocking effect that prevents impurities such as oxygen and moisture from passing through the membrane. Aluminum chloride is a material that can absorb impurities such as hydrogen and moisture during and after the transistor manufacturing process. This can prevent impurities from being mixed into the transistor 500. Therefore, the release of oxygen from the oxide constituting the transistor 5 can be suppressed. Suitable for use as a protective film against 00.

[0374] An insulator 586 is provided on the insulator 582. The insulator 586 is The same materials as those of 320 can be used. In addition, these insulators have a relatively low dielectric constant. By using a material with high insulating properties, the parasitic capacitance between wiring can be reduced. The edge 586 can be made of a silicon oxide film, a silicon oxynitride film, or the like.

[0375] Also, the insulator 520, the insulator 522, the insulator 524, the insulator 544, the insulator 580, the insulator The insulator 574, the insulator 581, the insulator 582, and the insulator 586 are provided with the conductor 546 and and a conductor 548 and the like are embedded therein.

[0376] The conductor 546 and the conductor 548 are connected to the capacitor 600, the transistor 500, or the transistor The conductor 546 functions as a plug or wiring that connects to the transistor 390. The conductor 548 may be formed using a material similar to that of the conductor 328 or the conductor 330. This can be done.

[0377] After the transistor 500 is formed, an opening is formed to surround the transistor 500. An insulator having high barrier properties against hydrogen or water may be formed so as to cover the opening. By encasing the transistor 500 in the insulator with high barrier properties, moisture, Also, it is possible to prevent hydrogen from penetrating. may be encapsulated in an insulator that has high barrier properties against hydrogen or water. When forming an opening around the transistor 500, for example, the insulator 514 or insulating An opening is formed that reaches the insulator 522, and the above-mentioned insulating film 514 is formed in contact with the insulator 522. If an insulator with high barrier properties is formed, it can be used as part of the manufacturing process of the transistor 500. In addition, examples of insulators with high barrier properties against hydrogen or water include The same material as the insulator 522 may be used.

[0378] Next, a capacitor 600 is provided above the transistor 500. The capacitor 600 is , conductor 610, conductor 620, and insulator 630.

[0379] Furthermore, a conductor 612 may be provided over the conductor 546 and the conductor 548. 612 has a function as a plug or wiring that connects to the transistor 500. The conductor 610 functions as an electrode of the capacitor 600. The current collector 610 can be formed at the same time.

[0380] Conductor 612 and conductor 610 may be made of molybdenum, titanium, tantalum, tungsten, or the like. Metal film containing elements selected from the group consisting of silicon, aluminum, copper, chromium, neodymium, and scandium or a metal nitride film containing the above-mentioned elements (tantalum nitride film, titanium nitride film, nitride Molybdenum film, tungsten nitride film, etc. can be used. oxides containing tungsten oxide, indium zinc oxides containing tungsten oxide Lead oxide, indium oxide with titanium oxide, indium tin oxide with titanium oxide, Conductive materials such as indium zinc oxide and indium tin oxide with added silicon oxide are used You can also do this.

[0381] In FIG. 24, the conductor 612 and the conductor 610 are shown as single-layer structures, but the present invention is not limited to this configuration. For example, a conductive material having a barrier property and a conductive material having a high conductivity may be used. Conductors with barrier properties between weak conductors and highly conductive conductors with good adhesion may form a highly conductive material.

[0382] The conductor 620 is provided so as to overlap with the conductor 610 with the insulator 630 interposed therebetween. The conductor 620 may be made of a conductive material such as a metal material, an alloy material, or a metal oxide material. High-melting-point materials such as tungsten and molybdenum are used, which have both heat resistance and electrical conductivity. It is preferable to use tungsten, and it is particularly preferable to use other structures such as conductors. When forming the wiring at the same time as the structure, low-resistance metal materials such as Cu (copper) and Al (aluminum) are used. Just use

[0383] An insulator 640 is provided on the conductor 620 and the insulator 630. The insulator 40 can be made of the same material as the insulator 320. , and may function as a planarizing film that covers the underlying unevenness.

[0384] By using this structure, a semiconductor device using a transistor having an oxide semiconductor This allows for miniaturization or high integration.

[0385] 27A and 27B are modifications of the transistor 500 shown in FIGS. 26A and 26B. 26A is a cross-sectional view of the transistor 500 in the channel length direction, and FIG. 27A and 27B are cross-sectional views of the channel width direction of the sintered body 500. This can also be applied to other transistors included in the semiconductor device of one embodiment of the present invention, such as the transistor 390. It is possible.

[0386] 27A is a cross-sectional view of the transistor 500 in the channel length direction, and FIG. 27B is a cross-sectional view of the transistor 500 in the channel length direction. 27A and 27B are cross-sectional views of the transistor 500 in the channel width direction. The heater 500 has the insulators 402 and 404, which are the same as those shown in FIGS. 26A and 26B. The transistor 500 is different from the transistor 500. In addition, an insulator 552 is provided in contact with the side surface of the conductor 540a. 26A and 26B, and an insulator 552 is provided in contact with the side surface of the conductor 540b. 26A and 26B. Furthermore, the transistor 500 does not have an insulator 520. , differs from transistor 500 shown in FIG. 26B.

[0387] The transistor 500 shown in FIGS. 27A and 27B has an insulator 402 disposed on an insulator 512. In addition, the insulator 404 is provided on the insulator 574 and on the insulator 402.

[0388] In the transistor 500 shown in FIGS. 27A and 27B, the insulators 514, 516, and The edge 522, the insulator 524, the insulator 544, the insulator 580, and the insulator 574 form a pattern. The insulating material 404 covers the insulating material 404. 4 is the top surface of the insulator 574, the side surface of the insulator 574, the side surface of the insulator 580, the Side, side of insulator 524, side of insulator 522, side of insulator 516, side of insulator 514 The oxide 530 and the like are in contact with the side surface and the top surface of the insulator 402, respectively. 04 and is isolated from the outside by an insulator 402.

[0389] The insulators 402 and 404 are made of at least hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.). It is preferable that the insulator 40 has a high function of suppressing the diffusion of water molecules. 2 and the insulator 404 are made of a material with high hydrogen barrier properties, such as silicon nitride or nitride. It is preferable to use silicon oxide, which prevents hydrogen and the like from diffusing into the oxide 530. This can suppress the deterioration of the characteristics of the transistor 500. Therefore, the reliability of the semiconductor device of one embodiment of the present invention can be improved.

[0390] Insulator 552 includes insulator 581, insulator 404, insulator 574, insulator 580, and The insulator 552 is provided in contact with the insulator 544. The insulator 552 suppresses the diffusion of hydrogen or water molecules. For example, the insulator 552 is preferably a material with high hydrogen barrier properties. Use an insulator such as silicon nitride, aluminum oxide, or silicon nitride oxide. In particular, silicon nitride is a material with high hydrogen barrier properties, so that the insulator 552 and By using a material with a high hydrogen barrier property as the insulator 552, Impurities such as water or hydrogen are transferred from the insulator 580 to the conductor 540a and the conductor 540b. b can be used to prevent diffusion into the oxide 530. The oxygen contained in the conductive material 540a and the conductive material 540b can be prevented from being absorbed by the conductive material 540a and the conductive material 540b. As described above, the reliability of the semiconductor device of one embodiment of the present invention can be improved.

[0391] FIG. 28 shows the transistor 500 and the transistor 390 shown in FIGS. 27A and 27B. 10 is a cross-sectional view showing an example of the configuration of a semiconductor device in which a conductor 546 is formed. An insulator 552 is provided.

[0392] 29A and 29B show modifications of the transistors shown in FIGS. 27A and 27B. 9A is a cross-sectional view of the transistor in the channel length direction, and FIG. 9B is a cross-sectional view of the transistor in the channel length direction. 29A and 29B are cross-sectional views in the width direction of the transistor. The two-layer structure of oxide 530c1 and oxide 530c2 is shown in FIGS. 27A and 27B. The transistor shown is different.

[0393] The oxide 530c1 is formed on the top surface of the insulator 524, the side surface of the oxide 530a, and the side surface of the oxide 530b. The top and side surfaces, the side surfaces of the conductors 542a and 542b, the side surfaces of the insulator 544, and and contacts the side of the insulator 580. The oxide 530c2 contacts the insulator 550.

[0394] The oxide 530c1 may be, for example, an In-Zn oxide. When the oxide 530c has a single layer structure, the oxide 530c can be used as the material 530c2. For example, the oxide 530c2 may be made of a material similar to the material that can be used for the oxide 530c2. n:Ga:Zn=1:3:4 [atomic ratio], Ga:Zn=2:1 [atomic ratio], or G A metal oxide having an atomic ratio of a:Zn=2:5 can be used.

[0395] By forming the oxide 530c into a two-layer structure of the oxide 530c1 and the oxide 530c2, Therefore, the on-state current of the transistor can be increased compared to when the oxide 530c has a single-layer structure. Therefore, the transistor can be, for example, a power MOS transistor. Note that the oxide 530c included in the transistor illustrated in FIGS. 26A and 26B is also the oxide 53 It can have a two-layer structure of 0c1 and oxide 530c2.

[0396] The transistor shown in FIGS. 29A and 29B can be applied to, for example, transistor 390. As described above, the transistor 390 is the OS transistor shown in FIG. Therefore, when it functions as an output transistor, In this case, the on-state current of the OS transistor can be increased. The accuracy of the output voltage can be improved. The transistor 500 and other components included in the semiconductor device of one embodiment of the present invention other than the transistor 390 The present invention can also be applied to transistors.

[0397] 30 shows a transistor 500 having the configuration shown in FIGS. 26A and 26B, and a transistor 3 29A and 29B. 28, an insulator 552 is provided on the side of the conductor 546. As shown in FIG. 30, the semiconductor device of one embodiment of the present invention includes a transistor 390 and a The transistor 500 is an OS transistor, while the transistor 390 and the transistor Each of the registers 500 can be configured differently.

[0398] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible. [Explanation of symbols]

[0399] C1: Capacitor, C2: Capacitor, M1: Transistor, M2: Transistor, M3: Transistor R1: Resistor, R2: Resistor, R3: Resistor, RS1: Resistor, RS2: Resistor, SW1: switch, SW3: switch, 10: circuit, 10A: circuit, 20: circuit, 21: circuit, 21 A: Circuit, 22: Circuit, 22A: Circuit, 30: Circuit, 31: Circuit, 31a: Circuit, 31A : circuit, 31b: circuit, 31c: circuit, 32: circuit, 32a: switch, 32A: circuit, 32b: switch, 33: switch, 40: secondary battery module, 40A: secondary battery module module, 41: secondary battery, 42: sensor, 43: resistor, 50a: comparison circuit, 50b: memory 51: comparison circuit, 51a: comparison circuit, 51b: memory, 52a: comparison circuit, 52b: Memory, 53a: comparison circuit, 53b: memory, 60a: comparison circuit, 60b: memory, 61 : comparison circuit, 61a: comparison circuit, 61b: memory, 62a: comparison circuit, 62b: memory, 63a: comparison circuit, 63b: memory, 71: wiring, 72: wiring, 73: wiring, 74: wiring , 75: Wiring, 76: Wiring, 77: Wiring, 78: Wiring, 211a: Positive electrode, 211b: Negative electrode , 212a: lead, 212b: lead, 214: separator, 215a: joint, 21 5b: Joint, 217: Fixing member, 250: Secondary battery, 251: Exterior body, 262: Seal part, 263: sealing part, 300: secondary battery, 301: positive electrode can, 302: negative electrode can, 303: Gasket, 304: positive electrode, 305: positive electrode current collector, 306: positive electrode active material layer, 307: negative electrode , 308: negative electrode current collector, 309: negative electrode active material layer, 310: separator, 311: substrate, 3 13: semiconductor region, 314a: low resistance region, 314b: low resistance region, 315: insulator, 3 16: conductor, 320: insulator, 322: insulator, 324: insulator, 326: insulator, 3 28: Conductor, 330: Conductor, 350: Insulator, 352: Insulator, 354: Insulator, 3 56: conductor, 360: insulator, 362: insulator, 364: insulator, 366: conductor, 3 70: Insulator, 372: Insulator, 374: Insulator, 376: Conductor, 380: Insulator, 3 82: insulator, 384: insulator, 386: conductor, 390: transistor, 402: insulation body, 404: insulator, 500: transistor, 503: conductor, 503a: conductor, 50 3b: conductor, 510: insulator, 512: insulator, 514: insulator, 516: insulator, 5 18: Conductor, 520: Insulator, 522: Insulator, 524: Insulator, 530: Oxide, 5 30a: oxide, 530b: oxide, 530c: oxide, 530c1: oxide, 530c 2: oxide, 540a: conductor, 540b: conductor, 542: conductor, 542a: conductor , 542b: conductor, 543a: region, 543b: region, 544: insulator, 546: conductor 548: conductor, 550: insulator, 552: insulator, 560: conductor, 560a: conductor Conductor, 560b: Conductor, 574: Insulator, 580: Insulator, 581: Insulator, 582: Insulator, 586: Insulator, 600: Capacitor, 610: Conductor, 612: Conductor, 620: Conductor current collector, 630: insulator, 640: insulator, 700: secondary battery, 701: positive electrode current collector, 70 2: Positive electrode active material layer, 703: Positive electrode, 704: Negative electrode current collector, 705: Negative electrode active material layer, 706 : negative electrode, 707: separator, 708: electrolyte, 709: outer casing, 710: positive electrode lead electrode, 711: negative electrode lead electrode, 800: secondary battery, 801: positive electrode cap, 802: battery Can, 803: positive electrode terminal, 804: positive electrode, 805: separator, 806: negative electrode, 807: negative electrode Pole terminal, 808: insulating plate, 809: insulating plate, 811: PTC element, 812: safety valve mechanism, 813: Conductive plate, 814: Conductive plate, 815: Module, 816: Conductive wire, 817: Temperature control Control device, 900: circuit board, 910: label, 911: terminal, 912: circuit, 913: Next battery, 914: antenna, 915: antenna, 916: layer, 917: layer, 918: 920: display device, 921: sensor, 922: terminal, 930: housing, 930a: housing body, 930b: housing, 931: negative electrode, 932: positive electrode, 933: separator, 950: winding Body, 951: terminal, 952: terminal, 980: secondary battery, 981: film, 982: film Film, 993: Winding body, 994: Negative electrode, 995: Positive electrode, 996: Separator, 997: Ri lead electrode, 998: lead electrode, 7100: portable display device, 7101: housing, 7102: Display unit, 7103: operation buttons, 7104: secondary battery, 7200: portable information terminal, 720 1: Housing, 7202: Display, 7203: Band, 7204: Buckle, 7205: Operation Button, 7206: Input / output terminal, 7207: Icon, 7300: Display device, 7304: Display unit, 7400: mobile phone, 7401: housing, 7402: display unit, 7403: operation buttons 7404: External connection port 7405: Speaker 7406: Microphone 7407: Secondary battery, 7500: Electronic cigarette, 7501: Atomizer, 7502: Cartridge, 7 504: Secondary battery, 8000: Display device, 8001: Housing, 8002: Display unit, 8003 : speaker unit, 8004: secondary battery, 8021: charging device, 8022: cable, 802 4: Secondary battery, 8100: Lighting device, 8101: Housing, 8102: Light source, 8103: Secondary Battery, 8200: Indoor unit, 8201: Housing, 8202: Air outlet, 8203: Secondary battery, 8 204: Outdoor unit, 8300: Electric refrigerator-freezer, 8301: Housing, 8302: Refrigerator door, 8303: Freezer door, 8304: Secondary battery, 8400: Automobile, 8401: Headlight 8406: Electric motors, 8500: Automobiles, 8600: Scooters, 8601: Cycling mirror, 8602: secondary battery, 8603: turn signal light, 8604: under-seat storage, 960 0: Tablet type terminal, 9625: Switch, 9627: Switch, 9628: Operation switch switch, 9630: housing, 9630a: housing, 9630b: housing, 9631: display unit, 96 31a: Display unit, 9631b: Display unit, 9633: Solar cell, 9634: Charge / discharge control circuit ,9635: Storage battery, 9636: DC-DC converter, 9637: Converter, 9640 :Movable part

Claims

[Claim 1] A semiconductor device including a secondary battery module and a first circuit, the secondary battery module includes a secondary battery and a sensor; the first circuit has a variable resistor; the sensor has a function of detecting the temperature of the secondary battery, The first circuit comprises: a function of determining a charging voltage of the secondary battery and outputting a first result; a function of determining the temperature of the secondary battery detected by the sensor and outputting a second result; determining the size of the variable resistor based on the first result and the second result; Discharging the charging voltage through the variable resistor; and a function of stopping discharging when the charging voltage reaches a designated voltage.

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