Substrate manufacturing system and substrate manufacturing method

Abstract

When manufacturing a substrate such as a wafer from a workpiece such as an ingot, the presence of foreign matter remaining on the manufactured substrate is suppressed. [Solution] The substrate manufacturing system 1 is a system for manufacturing wafers 200, 201 having a thickness less than that of the ingot from an ingot, and includes a laser processing unit 20 that irradiates the ingot with a laser beam of a wavelength that passes through the ingot to form a separation layer inside the ingot, a substrate separation unit 30 that separates the wafers 200, 201 from the ingot starting from the separation layer, a substrate accommodation section that accommodates the wafers 200, 201, a cleaning unit that cleans the wafers 200, 201 accommodated in the substrate accommodation section, and a transport unit 60 that transports the ingot and / or wafers 200, 201 between the laser processing unit 20, the substrate separation unit 30, the substrate accommodation section, and the cleaning unit 70.

Description

[Technical Field]

[0001] The present invention relates to a substrate manufacturing system and a method for manufacturing a substrate. [Background technology]

[0002] As a manufacturing apparatus for manufacturing substrates such as wafers from workpieces such as ingots, a manufacturing apparatus has been proposed that includes a laser irradiation unit that positions the focal point of a laser beam having a wavelength that is transparent to the ingot inside the ingot and irradiates the laser beam to form a separation layer inside the ingot, and a wafer separation unit that separates wafers from the ingot starting from the formed separation layer (see, for example, Patent Document 1).

[0003] The apparatus disclosed in the above-mentioned Patent Document 1 further includes a transfer tray for accommodating ingots and wafers, and a belt conveyor unit for transferring the transfer tray to each unit.

[0004] In the device disclosed in Patent Document 1, the separated wafers are accommodated in wafer accommodation portions of a transport tray, and then transported by a conveyor to finally be accommodated in a storage cassette for accommodating wafers.

[0005] The wafers stored in the storage cassette are carried by an operator to a grinding device, where one surface on which the separation layer is formed is ground. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Patent No. 7408474 Summary of the Invention [Problem to be solved by the invention]

[0007] Incidentally, when wafers are separated in the wafer separating unit, separation debris is generated and may adhere to the separated wafers.

[0008] Furthermore, foreign matter such as dust accumulated in the wafer storage portion of the transport tray may adhere to the wafer.

[0009] If grinding is performed by a grinding device when foreign matter such as separated chips or dust is attached to the wafer, there is a risk that the wafer may crack during grinding or the processing quality may deteriorate.

[0010] The present invention has been made in view of such problems, and aims to suppress the remaining of foreign matter on a manufactured substrate such as a wafer when the substrate is manufactured from a workpiece such as an ingot. [Means for solving the problem]

[0011] In order to solve the above-mentioned problems and achieve the object, the substrate manufacturing system of the present invention is a substrate manufacturing system that manufactures a substrate having a thickness less than that of a workpiece from a workpiece, and is characterized by comprising: a laser processing unit that irradiates the workpiece with a laser beam of a wavelength that passes through the workpiece to form a separation layer inside the workpiece, a substrate separation unit that separates the substrate from the workpiece starting from the separation layer, a substrate accommodation section that accommodates the substrate, a cleaning unit that cleans the substrate accommodated in the substrate accommodation section, and a transport unit that transports the workpiece and / or the substrate between the laser processing unit, the substrate separation unit, the substrate accommodation section, and the cleaning unit.

[0012] In the substrate manufacturing system, the cleaning unit may have a first holding part that holds the other side of the substrate while exposing one side of the substrate, a second holding part that holds the one side of the substrate while exposing the other side opposite to the one side of the substrate, a first cleaning part that cleans the one side of the substrate, and a second cleaning part that cleans the other side of the substrate.

[0013] In the substrate manufacturing system, the cleaning unit may further include a moving unit that moves the first holding part and the second holding part relative to each other.

[0014] In the substrate manufacturing system, the first holding unit holds the substrate at a first cleaning position with one side facing vertically upward, and the second holding unit holds the substrate at a second cleaning position located above the first cleaning position with the other side facing vertically downward, and the first cleaning unit and the second cleaning unit may clean the one side or the other side from between the first cleaning position and the second cleaning position in the vertical direction.

[0015] The substrate manufacturing system may further include a gas ejection nozzle that ejects gas onto the one surface of the substrate from above the second cleaning position when the substrate is held at the second cleaning position.

[0016] The substrate manufacturing method of the present invention is a substrate manufacturing method that uses the substrate manufacturing system to manufacture a substrate having a thickness less than that of a workpiece from the workpiece, and is characterized by comprising a separation layer formation step in the laser processing unit that forms a separation layer inside the workpiece, a separation step in the substrate separation unit that separates the substrate from the workpiece on which the separation layer has been formed, a cleaning step in the cleaning unit that cleans the substrate, and a storage step that stores the cleaned substrate in the substrate storage section.

[0017] The substrate manufacturing method of the present invention is a substrate manufacturing method that uses the substrate manufacturing system to manufacture a substrate having a thickness less than that of a workpiece from a workpiece, and includes a separation layer forming step in the laser processing unit to form a separation layer inside the workpiece, a separation step in the substrate separation unit to separate the substrate from the workpiece on which the separation layer has been formed, a cleaning step in the cleaning unit to clean the substrate, and a accommodating step to accommodate the cleaned substrate in the substrate accommodating section, and is characterized in that the cleaning step includes a first cleaning step in which the first holding section holds the other side of the substrate and cleans the one side of the substrate, a second cleaning step in which the second holding section holds the one side of the substrate and cleans the other side of the substrate, and a transfer step in which the substrate is transferred from one of the first holding section and the second holding section to the other.

[0018] The substrate manufacturing method of the present invention is a substrate manufacturing method that uses the substrate manufacturing system to manufacture a substrate having a thickness less than that of a workpiece from a workpiece, and includes a separation layer forming step in the laser processing unit to form a separation layer inside the workpiece, a separation step in the substrate separation unit to separate the substrate from the workpiece on which the separation layer has been formed, a cleaning step in the cleaning unit to clean the substrate, and a accommodating step to accommodate the cleaned substrate in the substrate accommodating section, and is characterized in that the cleaning step includes a first cleaning step in which the first holding section holds the other side of the substrate and cleans the one side of the substrate, a second cleaning step in which the second holding section holds the one side of the substrate and cleans the other side of the substrate after the first cleaning step, and a transfer step in which the substrate is transferred from the first holding section to the second holding section.

[0019] In the method for manufacturing a substrate, the surface including the separation layer may be the one surface.

[0020] The substrate manufacturing method of the present invention is a substrate manufacturing method for manufacturing a substrate having a thickness less than that of a workpiece using the substrate manufacturing system, and includes a separation layer forming step of forming a separation layer inside the workpiece in the laser processing unit, a separation step of separating the substrate from the workpiece on which the separation layer has been formed in the substrate separation unit, a cleaning step of cleaning the substrate in the cleaning unit, and a accommodating step of accommodating the cleaned substrate in the substrate accommodating part, and the cleaning step is performed to remove the separation layer from the substrate. The method includes a first cleaning step in which the surface including the layer is defined as the one side, the other side of the substrate is held by the first holding part, and the one side of the substrate is cleaned by the first cleaning part; a second cleaning step in which, after the first cleaning step, the one side of the substrate is held by the second holding part, and the other side of the substrate is cleaned by the second cleaning part; and a transfer step in which the substrate is transferred from the first holding part to the second holding part, and in the second cleaning step, the other side is cleaned while the gas is ejected from the gas ejection nozzle onto the one side of the substrate. [Effects of the Invention]

[0021] In the present invention, the substrate can be cleaned in the cleaning unit before being accommodated in the substrate accommodation section, which makes it possible to prevent foreign matter from remaining on the manufactured substrate when manufacturing substrates such as wafers from workpieces such as ingots. [Brief explanation of the drawings]

[0022] [Figure 1] FIG. 1 is a perspective view schematically illustrating an example of the configuration of a substrate manufacturing system according to a first embodiment. [Figure 2] FIG. 2 is a perspective view schematically illustrating the state in which the substrate storage unit and the transport tray rack of the substrate manufacturing system shown in FIG. 1 are removed. [Figure 3] FIG. 3 is a perspective view schematically showing a carrier tray of the substrate manufacturing system shown in FIG. [Figure 4] FIG. 4 is an enlarged perspective view of a portion IV in FIG. 2, showing an example of the configuration of the cleaning unit. [Figure 5] FIG. 5 is a perspective view showing an example of the configuration of the cleaning unit of the substrate manufacturing system shown in FIG. [Figure 6] FIG. 6 is a side view showing an example of the configuration of the cleaning unit shown in FIG. [Figure 7] FIG. 7 is a flowchart showing the flow of the method for manufacturing a substrate according to the first embodiment. [Figure 8] FIG. 8 is a perspective view schematically showing an ingot grinding step in the method for producing the substrate shown in FIG. [Figure 9] FIG. 9 is a perspective view schematically showing a separation layer forming step in the method for manufacturing the substrate shown in FIG. [Figure 10] 10 is a side view, partially in section, schematically showing a state in which the substrate separation unit applies ultrasonic vibration to the ingot in the separation step of the substrate manufacturing method shown in FIG. [Figure 11]11 is a side view schematically showing a state in which the ultrasonic wave applying unit of the substrate separating unit sucks and holds the first surface of the ingot in the separating step of the substrate manufacturing method shown in FIG. [Figure 12] FIG. 12 is a perspective view schematically showing a state in which a wafer separated from an ingot is carried into a cleaning unit in the first cleaning step of the substrate manufacturing method shown in FIG. [Figure 13] FIG. 13 is a perspective view schematically showing a state in which one surface of a wafer separated from an ingot is cleaned in the first cleaning step of the cleaning steps in the method for producing a substrate shown in FIG. [Figure 14] FIG. 14 is a perspective view schematically showing a changeover step in the method for manufacturing the substrate shown in FIG. [Figure 15] FIG. 15 is a perspective view schematically showing a second cleaning step in the method for manufacturing the substrate shown in FIG. [Figure 16] FIG. 16 is a perspective view schematically showing a housing step in the method for manufacturing the substrate shown in FIG. [Figure 17] FIG. 17 is a flowchart showing the flow of a modified example of the method for manufacturing the substrate shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0023] Modes (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined as appropriate. Furthermore, various omissions, substitutions, or modifications of the configuration can be made within the scope of the gist of the present invention.

[0024] [Embodiment 1] A substrate manufacturing system according to a first embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a perspective view that schematically shows an example of the configuration of the substrate manufacturing system according to the first embodiment. Fig. 2 is a perspective view that schematically shows a state in which the substrate storage unit and the transport tray rack of the substrate manufacturing system shown in Fig. 1 have been removed. Fig. 3 is a perspective view that schematically shows a transport tray of the substrate manufacturing system shown in Fig. 1.

[0025] The substrate manufacturing system 1 shown in Figures 1 and 2 according to embodiment 1 is a system for manufacturing wafers 200, 201 (shown in Figure 3) having a thickness less than the thickness of ingots 100, 101 (shown in Figure 3), which are workpieces shown in Figure 3.

[0026] (ingots and wafers) Ingots 100, 101 to be processed by the substrate manufacturing system 1 according to the first embodiment are single-crystal SiC ingots made of SiC (silicon carbide) and formed into a cylindrical shape as a whole. The ingots 100, 101 have the same configuration except for their different outer diameters. Identical parts of the ingots 100, 101 are designated by the same reference numerals and will not be described. In the present invention, the ingots 100, 101 may be made of Si, LT, LN, GaN, Ga2O3, diamond, or the like, and the materials and sizes are not limited to those described in the embodiment.

[0027] Ingots 100 and 101 are hexagonal single crystal SiC ingots in embodiment 1. As shown in Fig. 3 , ingots 100 and 101 have a circular first surface 102, a circular second surface 103, a peripheral surface 104 that is continuous with the outer edges of first surface 102 and second surface 103, and flat first orientation flat 105 and second orientation flat 106 formed on peripheral surface 104.

[0028] The orientation flats 105 and 106 are flat surfaces formed on parts of the peripheral surface 104 to indicate the crystal orientation of the ingots 100 and 101. The second orientation flat 106 is perpendicular to the first orientation flat 105. The length of the first orientation flat 105 is longer than the length of the second orientation flat 106.

[0029] The first surfaces 102 of the ingots 100 and 101 are ground by the grinding unit 13, which will be described later, to flatten the first surfaces 102.

[0030] The wafers 200, 201 are formed into a disk shape by separating a portion of the ingots 100, 101 on the first surface 102 side from the ingots 100, 101. For this reason, the wafers 200, 201 have the same configuration as the ingots 100, 101 except for their different outer diameters. The wafers 200, 201 also have the same configuration as the ingots 100, 101 except for their different thicknesses. The same parts of the wafers 200, 201 are designated by the same reference numerals, and their descriptions are omitted. The same parts of the wafers 200, 201 as the ingots 100, 101 are designated by the same reference numerals, and their descriptions are omitted.

[0031] The wafers 200, 201 have a circular one surface 202 separated from the ingot 100, 101, a second surface 203 which is the first surface 102 of the circular ingot 100, 101 on the opposite side to the first surface 202, a peripheral surface 104 which is connected to the outer edges of the one surface 202 and the other surface 203, and orientation flats 105, 106 formed on the peripheral surface 104.

[0032] (Substrate manufacturing system) As shown in Figures 1 and 2, the substrate manufacturing system 1 of embodiment 1 includes an ingot grinding unit 10, a laser processing unit 20, a substrate separation unit 30, a substrate accommodating section 40, a cleaning unit 70 (shown only in Figure 2), a transport unit 60, and a control unit (not shown).

[0033] The ingot grinding unit 10 is a processing unit that grinds the first surfaces 102 of the ingots 100 and 101. As shown in FIG. 2 , the ingot grinding unit 10 includes a unit main body 11, a holding table 12 installed on the unit main body 11, and a grinding unit 13.

[0034] Two holding tables 12 are provided on a turntable 14 that is mounted on the unit body 11 and is rotatable about an axis parallel to the Z-axis direction. The holding table 12 suction-holds the second surfaces 103 of the ingots 100, 101 on a holding surface 15, which is the upper surface, and can be rotated about an axis parallel to the Z-axis direction by a rotational movement unit (not shown). The Z-axis direction is parallel to the vertical direction. As the turntable 14 rotates about its axis, the holding table 12 moves between a loading / unloading position where the ingots 100, 101 are loaded and unloaded and a processing position where the ingots are ground by the grinding unit 13.

[0035] The grinding unit 13 grinds and flattens the first surfaces 102 of the ingots 100, 101 held by suction on the holding table 12. The grinding unit 13 includes a grinding wheel 16 attached to the lower end of a spindle parallel to the Z-axis direction by a spindle motor (not shown), and a grinding feed unit 17 that moves the grinding wheel 16 in the Z-axis direction for each spindle. The grinding wheel 16 includes an annular wheel base attached to the lower end of the spindle, and a plurality of grinding stones attached to the underside of the wheel base.

[0036] The ingot grinding unit 10 suction-holds the ingots 100, 101 and rotates the holding table 12 positioned at the processing position around its axis, while rotating the grinding wheel 16 around its axis, and lowers the grinding unit 13 to bring the grinding wheel into contact with the first surface 102 of the ingots 100, 101, thereby grinding and flattening the first surface 102 of the ingots 100, 101.

[0037] The laser processing unit 20 irradiates the ingots 100, 101 with a laser beam 21 (shown in FIG. 9) having a wavelength that is transmitted through the ingots 100, 101, to form a separation layer 108 (shown in FIG. 9) inside the ingots 100, 101. As shown in FIGS. 1 and 2, the laser processing unit 20 includes a unit body 22, a holding table 23 installed on the unit body 22, and an irradiation unit 24. The unit body 22 is aligned with the unit body 11 of the ingot grinding unit 10 in the Y-axis direction, which is parallel to the horizontal direction.

[0038] The holding table 23 is provided on the unit body 22 so as to be movable in the X-axis direction, which is parallel to the horizontal direction and perpendicular to the Y-axis direction, by a moving unit (not shown). The holding table 23 suction-holds the second surfaces 103 of the ingots 100, 101 on a holding surface 25, which is the upper surface, and is rotatable around an axis parallel to the Z-axis direction by a rotational moving unit (not shown). The holding table 23 is moved in the X-axis direction by the moving unit, and thereby moves between a loading / unloading position where the ingots 100, 101 are loaded and unloaded and a processing position where the irradiation unit 24 irradiates the laser beam 21.

[0039] The irradiation unit 24 irradiates the ingots 100, 101 held by suction on the holding table 23 with a laser beam 21. The irradiation unit 24 includes a laser oscillator (not shown) that oscillates a pulsed laser beam 21, and a condenser that condenses the pulsed laser beam 21 oscillated by the laser oscillator and irradiates the ingots 100, 101 with the laser beam 21, and is movable in the Y-axis direction by a moving unit (not shown).

[0040] The laser processing unit 20 moves the holding table 23 that holds the ingots 100, 101 by suction in the X-axis direction, or moves the collector in the Y-axis direction, while positioning the focal point of the laser beam 21, which has a wavelength that is transparent to the ingots 100, 101, at a depth corresponding to the thickness of the wafers 200, 201 to be produced from the first surface 102 of the ingots 100, 101, and irradiates the laser beam 21 onto the ingots 100, 101, thereby forming a separation layer 108 with reduced strength inside the ingots 100, 101.

[0041] The substrate separation unit 30 separates the wafers 200, 201 from the ingots 100, 101 starting from the separation layer 108. As shown in Figures 1 and 2, the substrate separation unit 30 includes a unit body 31, a holding table 32 installed on the unit body 31, a liquid tank body 33, and an ultrasonic wave applying unit 34. The unit body 31 is aligned in the Y-axis direction with the unit body 11 of the ingot grinding unit 10 and the unit body 22 of the laser processing unit 20.

[0042] The holding table 32 is provided on the unit body 31 so as to be movable in the X-axis direction by a moving unit (not shown). The holding table 32 suction-holds the second surfaces 103 of the ingots 100, 101 on a holding surface 35, which is the upper surface. The holding table 32 is moved in the X-axis direction by the moving unit, and thereby moves between a loading / unloading position where the ingots 100, 101 are loaded and unloaded and a processing position where ultrasonic waves are applied by the ultrasonic application unit 34.

[0043] The liquid tank body 33 is provided so as to be able to move up and down along the Z-axis direction by a lifting unit (not shown), and when it moves down it covers the outer periphery of the holding table 32 positioned at the processing position. The liquid tank body 33 moves down to cover the outer periphery of the holding table 32 positioned at the processing position, and liquid (pure water in the first embodiment) is supplied between the liquid tank body 33 and the holding table 32 from a liquid supply source (not shown).

[0044] The ultrasonic wave imparting unit 34 is provided so as to be able to move up and down along the Z-axis direction by a lifting unit (not shown) independently of the liquid tank body 33. The lower surface of the ultrasonic wave imparting unit 34 is formed flat along the horizontal direction. The ultrasonic wave imparting unit 34 is equipped with an ultrasonic vibration element made of a piezoelectric element, and is lowered by the lifting unit to come close to the ingots 100, 101 held by suction on the holding table 32 and impart ultrasonic vibrations to the ingots 100, 101 held by suction on the holding table 32. The ultrasonic wave imparting unit 34 is capable of holding the first surfaces 102 of the ingots 100, 101 by suction.

[0045] In the substrate separation unit 30, the liquid tank body 33 is lowered to cover the outer periphery of the holding table 32 positioned at the processing position and holding the ingots 100, 101 by suction, and liquid is stored between the holding table 32 and the liquid tank body 33. Then, the ultrasonic wave application unit 34 is lowered. The ultrasonic wave application unit 34 applies ultrasonic vibrations to the ingots 100, 101, thereby separating the wafers 200, 201 from the ingots 100, 101 starting from the separation layer 108. After applying ultrasonic vibrations for a predetermined time, the substrate separation unit 30 stops the supply of liquid, raises the liquid tank body 33, and holds the first surfaces 102 of the ingots 100, 101 by suction on the lower surface of the ultrasonic wave application unit 34. Then, the ultrasonic wave application unit 34 is raised to separate the wafers 200, 201 separated from the ingots 100, 101.

[0046] The substrate accommodating section 40 accommodates the wafers 200, 201 separated from the ingots 100, 101. The substrate accommodating section 40 is aligned in the Y-axis direction with the unit body 11 of the ingot grinding unit 10. In the first embodiment, the substrate accommodating section 40, the unit body 11 of the ingot grinding unit 10, the unit body 22 of the laser processing unit 20, and the unit body 31 of the substrate separating unit 30 are aligned in this order in the Y-axis direction.

[0047] The substrate accommodating unit 40 has 16 accommodating units 41 penetrating in the Y-axis direction. Each accommodating unit 41 accommodates a cassette 2 that accommodates wafers 200, 201 separated from ingots 100, 101. In the first embodiment, the substrate accommodating unit 40 is capable of accommodating the cassette 2 in the accommodating unit 41 from the front side in the Y-axis direction in FIG. 1, and is also capable of accommodating the wafers 200, 201 in the cassette 2 in the accommodating unit 41 from the back side in the Y-axis direction in FIG. 1. The cassette 2 is an accommodating container that accommodates a plurality of wafers 200, 201 spaced apart in the Z-axis direction.

[0048] In the first embodiment, the substrate accommodating section 40 has four accommodating sections 41 in the X-axis direction and four in the Z-axis direction, for a total of 16 accommodating sections 41. In the first embodiment, the substrate accommodating section 40 has different identification marks 42 attached to the four accommodating sections 41 located at the top in the Z-axis direction. The identification marks 42 are used to distinguish between the wafers 200, 201 accommodated in the cassette 2.

[0049] The identification mark 42 may be any one of a color, a symbol, a letter, a figure, a pattern, or a picture, or may be a combination of two or more of a color, a symbol, a letter, a figure, a pattern, or a picture. In the illustrated embodiment, the letters A, B, C, and D are applied as the identification mark 42 to the bottom surface of the storage section 41, but the identification mark 42 may be colored in red, blue, green, yellow, or the like, or may be a figure such as a circle, a triangle, a square, or a star, or may be a picture.

[0050] The identification marks 42 attached to the storage sections 41 differ from one another in any of color, symbol, character, figure, pattern, or picture. In the first embodiment, the cassettes 2 housed in the storage sections 41 having different identification marks 42 house wafers 200, 201 with different product numbers (different outer diameters, thicknesses, materials, etc.), but in the present invention, they may house wafers 200, 201 with the same product number.

[0051] In the first embodiment, the cassette 2 accommodated in the substrate accommodation unit 40 is provided with an identification mark 42 that is identical to that of the accommodation unit 41 in which the cassette 2 is accommodated. The cassette 2 is accommodated in an accommodation unit 41 that has an identification mark 42 that is identical to the affixed identification mark 42, and is also accommodated in an accommodation unit 41 that overlaps in the Z-axis direction with an accommodation unit 41 that has an identification mark 42 that is identical to the affixed identification mark 42.

[0052] The cleaning unit 70 cleans the wafers 200, 201 that have been separated from the ingots 100, 101 and are yet to be accommodated in the cassette 2 accommodated in the accommodation section 41 of the substrate accommodation section 40. The cleaning unit 70 is provided between the substrate accommodation section 40 and the unit body 11 of the ingot grinding unit 10 in the Y-axis direction. The configuration of the cleaning unit 70 will be described later.

[0053] The transport unit 60 transports the ingots 100, 101 and / or the wafers 200, 201 between the laser processing unit 20, the substrate separation unit 30, the substrate accommodation unit 40, and the cleaning unit 70. The transport unit 60 accommodates the ingots 100, 101 and the wafers 200, 201 in a transport tray 50 shown in FIG.

[0054] 3, the transport tray 50 includes a rectangular upper wall 51, a rectangular lower wall 52 disposed below the upper wall 51, and a pair of rectangular side walls 53 connecting the upper wall 51 and the lower wall 52, and the upper wall 51, the lower wall 52, and the pair of side walls 53 form a tunnel 54. An ingot accommodation section 55 for accommodating ingots 100, 101 is formed on the upper surface of the upper wall 51.

[0055] The ingot accommodating portion 55 in the illustrated embodiment has an annular first ingot accommodating portion 551 recessed downward from the upper surface of the upper wall 51, and a circular second ingot accommodating portion 552 having a smaller diameter than the first ingot accommodating portion 551 and recessed further downward than the first ingot accommodating portion 551. The first ingot accommodating portion 551 and the second ingot accommodating portion 552 are formed concentrically.

[0056] The diameter of the first ingot accommodation section 551 is slightly larger (by a few mm) than a cylindrical ingot 100 having a relatively large diameter (for example, a diameter of 6 inches), and the first ingot accommodation section 551 accommodates the relatively large diameter ingot 100. The diameter of the second ingot accommodation section 552 is slightly larger than a cylindrical ingot 101 having a relatively small diameter (for example, a diameter of 4 inches), and the second ingot accommodation section 552 accommodates the relatively small diameter ingot 101.

[0057] As described above, the ingot accommodation section 55 in the illustrated embodiment includes first and second concentric ingot accommodation sections 551, 552 that accommodate two different sizes of ingots 100, 101. Note that the ingot accommodation section 55 may be a single circular accommodation recess that accommodates one size of ingot, or may include multiple concentric accommodation recesses that accommodate three or more sizes of ingots.

[0058] 3, a wafer accommodating portion 56 for accommodating wafers 200, 201 separated from the ingots 100, 101 is formed on the upper surface of the lower wall 52. The wafer accommodating portion 56 in the illustrated embodiment has an annular first wafer accommodating portion 561 recessed downward from the upper surface of the lower wall 52, and a circular second wafer accommodating portion 562 having a smaller diameter than the first wafer accommodating portion 561 and recessed further downward than the first wafer accommodating portion 561. The first wafer accommodating portion 561 and the second wafer accommodating portion 562 are formed concentrically.

[0059] The diameter of the first wafer accommodating portion 561 is slightly larger than that of a disk-shaped wafer 200 having a relatively large diameter (for example, a diameter of 6 inches), and the first wafer accommodating portion 561 accommodates the relatively large diameter wafer 200. The diameter of the second wafer accommodating portion 562 is slightly larger than that of a disk-shaped wafer 201 having a relatively small diameter (for example, a diameter of 4 inches), and the second wafer accommodating portion 562 accommodates the relatively small diameter wafer 201.

[0060] As described above, the wafer accommodating portion 56 in the illustrated embodiment includes first and second concentric wafer accommodating portions 561, 562 that accommodate two different sizes of wafers 200, 201. The wafer accommodating portion 56 may be a single circular recess that accommodates one size of wafer, or may include a plurality of concentric recesses that accommodate three or more sizes of wafers. In the present invention, the wafer accommodating portion 56 may be formed on the upper surface of the upper wall 51, and the ingot accommodating portion 55 may be formed on the upper surface of the lower wall 52, contrary to the illustrated embodiment.

[0061] The transport tray 50 is provided with an identification mark 42 that is the same as (i.e., corresponds to) the identification mark 42 provided on the corresponding accommodation section 41 of the substrate accommodation section 40 and the cassette 2. The cassette 2 and transport tray 50 accommodated in the accommodation section 41 of the corresponding substrate accommodation section 40 accommodate wafers 200, 201 with the same product number.

[0062] The identification mark 42 may be any one of a color, a symbol, a letter, a figure, a pattern, or a picture, or may be a combination of two or more of a color, a symbol, a letter, a figure, a pattern, or a picture. In the illustrated embodiment, the letters A, B, C, and D are applied as the identification mark 42 to the outer surface of the side wall 53 of the carrier tray 50, but the identification mark 42 may be a color such as red, blue, green, or yellow, or may be a figure such as a circle, triangle, square, or star, or may be a picture.

[0063] As shown in Fig. 1, the transport trays 50 containing the ingots 100, 101 are housed in a transport tray rack 3. The transport tray rack 3 has four housing sections 4 that penetrate in the X-axis direction indicated by the arrow X in Fig. 1. The transport tray rack 3 is provided across the substrate housing section 40 and the unit body 11 of the ingot grinding unit 10.

[0064] The transport tray rack 3 can store transport trays 50 in the storage section 4 from the front side in the X-axis direction in Figure 1, and can remove the transport trays 50 from the storage section 4 from the back side in the X-axis direction in Figure 1.

[0065] As shown in FIGS. 1 and 2, the transport unit 60 includes a belt conveyor unit 61 for transporting the transport tray 50 to the ingot grinding unit 10, the laser processing unit 20, and the substrate separation unit 30, and a transfer means 62.

[0066] The belt conveyor unit 61 includes an outgoing belt conveyor 611 that transports the transport tray 50 from the transport tray rack 3 toward the substrate separation unit 30 along the Y-axis direction, a return belt conveyor 612 that transports the transport tray 50 from the substrate separation unit 30 toward the substrate accommodating section 40 along the Y-axis direction, a first transport means 613 that transports the transport tray 50 from the end of the outgoing belt conveyor 611 near the substrate separation unit 30, which is the end point, to the end of the return belt conveyor 612 near the substrate separation unit 30, which is the start point, and stops the transport tray 50 being transported by the outgoing belt conveyor 611 at a position facing the substrate separation unit 30 in the X-axis direction, and a second transport means 614 that transports the transport tray 50 from the end of the return belt conveyor 612 near the transport tray rack 3, which is the end point, to the end of the outgoing belt conveyor 611 near the transport tray rack 3, which is the start point, of the outgoing belt conveyor 611.

[0067] The belt conveyor unit 61 also includes a first transport trace stopper 615 that can be raised and lowered to stop the transport tray 50 being transported by the outbound belt conveyor 611 at a position facing the ingot grinding unit 10 in the X-axis direction, and a second transport trace stopper 616 that can be raised and lowered to stop the transport tray 50 being transported by the outbound belt conveyor 611 at a position facing the laser processing unit 20 in the X-axis direction.

[0068] Furthermore, the belt conveyor unit 61 includes a first moving means 617 for moving the ingots 100, 101 between the transport tray 50 stopped by the first transport trace stopper 615 and the ingot grinding unit 10, a second moving means 618 for moving the ingots 100, 101 between the transport tray 50 stopped by the second transport trace stopper 616 and the laser processing unit 20, and a third moving means 619 for moving the ingots 100, 101 between the transport tray 50 stopped by the first transport means 613 and the substrate separation unit 30, and for moving the wafers 200, 201 peeled from the ingots 100, 101 from the substrate separation unit 30 to the transport tray 50 stopped by the first transport means 613.

[0069] Each of the first, second, and third moving means 617, 618, and 619, which may have a common configuration, includes an articulated arm 631 that is movable in the X-axis, Y-axis, and Z-axis directions, and a suction piece 632 that is attached to the tip of the articulated arm 631 so as to be freely turned upside down. One side of the suction piece 632 is formed with a plurality of suction holes (not shown) connected to suction means (not shown), and is capable of suction-holding the ingots 100, 101 or the wafers 200, 201.

[0070] The transfer means 62 transfers the transfer tray 50 between the storage section 4 of the transfer tray rack 3 and the outgoing belt conveyor 611 of the belt conveyor unit 61. The transfer means 62 transfers the wafers 200, 201 between the transfer tray 50 in the storage section 4 of the transfer tray rack 3, the cleaning unit 70, and the cassette 2 in the storage section 41 of the substrate storage section 40.

[0071] The transfer means 62 includes an articulated arm 621 that is movable in the X-axis, Y-axis, and Z-axis directions, and a suction piece 622 that is provided at the tip of the articulated arm 621 so as to be rotatable about an axis parallel to the horizontal direction and can be turned upside down. One side of the suction piece 622 is formed with a plurality of suction holes (not shown) connected to a suction means (not shown), allowing the transport tray 50 and wafers 200, 201 to be suction-held. In the present invention, the suction piece 622 may be configured so that suction holes are formed on both the top and bottom surfaces and that suction is possible on each surface. In this case, the suction piece 622 does not need to rotate about an axis parallel to the horizontal direction.

[0072] The transfer means 62 suction-holds the transport tray 50 on the suction piece 622 and transports the transport tray 50 between the transport tray rack 3 and the belt conveyor unit 61. The transfer means 62 suction-holds the wafers 200, 201 in the wafer accommodation portion 56 of the transport tray 50 in the transport tray rack 3 on the suction piece 622 and transports the wafers 200, 201 to the cleaning unit 70. The transfer means 62 also suction-holds the wafers 200, 201 in the cleaning unit 70 on the suction piece 622 and transfers the wafers 200, 201 to the cassette 2 accommodated in the accommodation portion 41 of the substrate accommodation unit 40.

[0073] (Cleaning unit) Next, the cleaning unit 70 will be described. Fig. 4 is a perspective view showing an example of the configuration of the cleaning unit by enlarging part IV in Fig. 2. Fig. 5 is a perspective view showing an example of the configuration of the cleaning unit of the substrate manufacturing system shown in Fig. 1. Fig. 6 is a side view showing an example of the configuration of the cleaning unit shown in Fig. 5.

[0074] As shown in Figures 4, 5 and 6, the cleaning unit 70 comprises a unit main body 71, a cover 72 covering the top of the unit main body 71, a first holding part 73, a second holding part 74, a moving unit 75, a first cleaning part 76, a second cleaning part 77, and a gas ejection nozzle 80 (shown in Figures 5 and 6).

[0075] The unit body 71 is provided between the substrate accommodating section 40 and the unit body 11 of the ingot grinding unit 10 in the Y-axis direction, and is aligned in the Y-axis direction with the substrate accommodating section 40, the unit body 11 of the ingot grinding unit 10, the unit body 22 of the laser processing unit 20, and the unit body 31 of the substrate separation unit 30. The cover 72 has an opening 721 that opens to the inside and outside of the cover 72 and allows the wafers 200, 201 to be freely loaded and unloaded.

[0076] The first holding unit 73 holds the other side 203 of the wafer 200, 201 so that the one side 202 of the wafer 200, 201 is exposed. The first holding unit 73 is provided at the tip of a holding arm 781 whose base end is supported by an upright column 78 that stands upright in the Z-axis direction from the unit body 71 and extends linearly in the Y-axis direction. The first holding unit 73 includes a disk-shaped holding unit main body 731 that is supported on the upper surface of the holding arm 781 so as to be rotatable about an axis parallel to the Z-axis direction, and a plurality of suction pads 732 provided at intervals in the circumferential direction on the outer edge of the upper surface of the holding unit main body 731. The first holding unit 73 suction-holds the other side 203 of the wafer 200, 201 on the suction pad 732, and holds the wafer 200, 201 so that the one side 202 is exposed.

[0077] The second holding part 74 holds the one surface 202 of the wafers 200, 201 so as to expose the other surface 203 opposite to the one surface 202 of the wafers 200, 201. The second holding part 74 is provided at the tip of a holding arm 782 whose base end is supported by an upright pillar 78 and which extends linearly in the Y-axis direction. The lower surface of the holding arm 782 faces the upper surface of the holding arm 781 in the Z-axis direction.

[0078] The second holding unit 74 includes a disk-shaped holding unit main body 741 supported on the lower surface of the holding arm 782 so as to be rotatable about an axis parallel to the Z-axis direction, and a plurality of suction pads 742 provided at intervals in the circumferential direction on the outer edge of the lower surface of the holding unit main body 741. The suction pads 742 of the second holding unit 74 face the suction pads 732 of the first holding unit 73 in the Z-axis direction. The second holding unit 74 holds the wafers 200, 201 by suction on one side 202 of the wafers 200, 201 to the suction pads 742, with the other side 203 exposed.

[0079] As described above, in the first embodiment, the first holding part 73 is located at the lower end of the upright pillar 78 (corresponding to the first cleaning position), and the second holding part 74 is located at the upper end of the upright pillar 78 (corresponding to the second cleaning position). For this reason, the first holding part 73 holds the wafers 200, 201 at the lower end of the upright pillar 78 with one surface 202 facing vertically upward. The second holding part 74 holds the wafers 200, 201 at the upper end located above the lower end of the upright pillar 78 with the other surface 203 facing vertically downward.

[0080] The moving unit 75 moves the first holding part 73 and the second holding part 74 relatively. In the first embodiment, the moving unit 75 is provided inside the erected column 78, and raises and lowers the holding arm 781 and the holding arm 782 independently of each other. The moving unit 75 raises and lowers the holding arm 781 and the holding arm 782 independently of each other, thereby moving the first holding part 73 and the second holding part 74 relatively.

[0081] The first cleaning unit 76 and the second cleaning unit 77 are provided at one end of a swivel arm 79 that is rotatably supported around an axis parallel to the Z-axis direction by the unit body 71 and has a rectangular shape in a plan view. The first cleaning unit 76 and the second cleaning unit 77 move between a cleaning position between the holding units 73, 74 and a retracted position where they are retracted from between the holding units 73, 74 as the base end of the swivel arm 79 rotates around the axis.

[0082] The first cleaning unit 76 cleans one surface 202 of the wafers 200, 201 held by the first holding unit 73. The first cleaning unit 76 includes a disk-shaped cleaning unit main body 761 rotatably provided on the lower surface of the tip of the rotating arm 79 around an axis parallel to the Z-axis direction, a plurality of brushes 762 provided on the outer edge of the lower surface of the cleaning unit main body 761, and a plurality of fluid ejection ports (not shown) opened in the center of the lower surface of the cleaning unit main body 761.

[0083] The brushes 762 extend downward from the lower surface of the cleaning unit main body 761, and a plurality of brushes 762 are provided at intervals in the radial and circumferential directions of the cleaning unit main body 761. The brushes 762 clean the first surface 202 of the wafers 200, 201 by bringing their tips into sliding contact with the first surface 202 of the wafers 200, 201 held by the first holder 73. In the first embodiment, the brushes 762 are made of resin. Specific examples of the resin that makes up the brush 762 include PTFE (polytetrafluoroethylene), ETFE (a copolymer of tetrafluoroethylene and ethylene), PE (polyethylene), PP (polypropylene), PVA (polyvinyl alcohol), and PU (polyurethane). In the first embodiment, a separation layer 108 is formed on the first surface 202 side of the wafers 200, 201, and a relatively large sliding force is required. Therefore, a nylon brush, which is relatively durable, was selected.

[0084] The fluid jetting port jets at least one of a cleaning liquid (pure water in the first embodiment) for cleaning the wafers 200 and 201 and pressurized air.

[0085] The second cleaning unit 77 cleans the other surface 203 of the wafers 200, 201 held by the second holding unit 74. The second cleaning unit 77 includes a disk-shaped cleaning unit main body 771 rotatably provided on the upper surface of the tip of the rotating arm 79 around an axis parallel to the Z-axis direction, a plurality of brushes 772 provided on the outer edge of the upper surface of the cleaning unit main body 771, and a plurality of fluid ejection ports 773 opening in the center of the upper surface of the cleaning unit main body 771.

[0086] The brushes 772 extend upward from the upper surface of the cleaning unit main body 771, and a plurality of brushes 772 are provided at intervals in the radial and circumferential directions of the cleaning unit main body 771. The brushes 772 clean the other side 203 of the wafers 200, 201 by bringing their tips into sliding contact with the other side 203 of the wafers 200, 201 held by the second holder 74. In the first embodiment, the brushes 772 are made of resin. Specific examples of the resin that makes up the brush 772 include PTFE (polytetrafluoroethylene), ETFE (a copolymer of tetrafluoroethylene and ethylene), PE (polyethylene), PP (polypropylene), PVA (polyvinyl alcohol), and PU (polyurethane). In the first embodiment, the separation layer 108 has already been removed from the other side 203 of the wafers 200, 201 by grinding, and a sponge-shaped PVA brush was selected to prevent damage to the cleaning surface.

[0087] The fluid jetting port 773 jets out at least one of a cleaning liquid (pure water in the first embodiment) for cleaning the wafers 200 and 201 and pressurized air.

[0088] The first cleaning unit 76 and the second cleaning unit 77 are positioned at the cleaning position by the swing arm 79, and rotate the holder bodies 731, 741 and the cleaning unit bodies 761, 771 about their axes while spraying a cleaning liquid from a fluid nozzle 773 onto one side 202 or the other side 203 of the wafers 200, 201 held by the holders 73, 74, to clean the one side 202 or the other side 203 of the wafers 200, 201 with the brushes 762, 772. When the first cleaning unit 76 and the second cleaning unit 77 are positioned at the cleaning position by the swing arm 79, they spray pressurized air from the fluid nozzle 773 onto the one side 202 or the other side 203 of the wafers 200, 201 held by the holders 73, 74, to dry the one side 202 or the other side 203 of the wafers 200, 201. In this way, the first cleaning section 76 and the second cleaning section 77 are provided at the tip of the swivel arm 79, and clean one side 202 or the other side 203 of the wafer 200, 201 between the lower end, which is the first cleaning position of the upright column 78, and the upper end, which is the second cleaning position, in the vertical direction.

[0089] The gas ejection nozzle 80 ejects pressurized air, which is gas, from above the upper end portion, which is the second cleaning position, of the standing column 78 toward one surface 202 of the wafers 200, 201 when the second holding part 74 holds the wafers 200, 201 at the upper end portion, which is the second cleaning position, of the standing column 78. In the first embodiment, the gas ejection nozzle 80 opens at the center of the lower surface of the holding part main body 741 of the second holding part 74. In the first embodiment, the gas ejection nozzle 80 ejects pressurized air from the center of the lower surface of the holding part main body 741 of the second holding part 74.

[0090] The control unit controls each component of the substrate manufacturing system 1 and causes the substrate manufacturing system 1 to perform processing operations on the ingots 100, 101 and the wafers 200, 201. The control unit is a computer having an arithmetic processing device with a microprocessor such as a CPU (central processing unit), a storage device with memory such as a ROM (read only memory) or RAM (random access memory), and an input / output interface device. The arithmetic processing device of the control unit performs arithmetic processing in accordance with a computer program stored in the storage device and outputs control signals for controlling the substrate manufacturing system 1 to each component of the substrate manufacturing system 1 via the input / output interface device.

[0091] The control unit is connected to a display unit (not shown) configured with a liquid crystal display device or the like for displaying the status and images of the machining operation, an input unit (not shown) used by the operator to register processing conditions, and an alarm unit for notifying the operator. The input unit is configured with at least one of a touch panel provided on the display unit and an external input device such as a keyboard. The alarm unit emits at least one of sound and light to notify the operator.

[0092] (Substrate manufacturing method) Next, a method for manufacturing a substrate according to the first embodiment will be described with reference to the drawings. FIG. 7 is a flowchart showing the flow of the method for manufacturing a substrate according to the first embodiment. The method for manufacturing a substrate according to the first embodiment is a method for manufacturing wafers 200, 201 having a thickness less than that of the ingots 100, 101 from the ingots 100, 101 using the substrate manufacturing system 1 configured as described above. Note that the wafers 200, 201 can be manufactured from the ingots 100, 101 using the same substrate manufacturing method, and therefore, hereinafter, a method for manufacturing the larger-diameter wafer 200 of the wafers 200, 201 from the larger-diameter ingot 100 of the ingots 100, 101 will be described as a representative example.

[0093] 7, the method for manufacturing a substrate includes an ingot grinding step 1001, which is a workpiece grinding step, a separation layer forming step 1002, a separation step 1003, a cleaning step 1004, a storage step 1005, and a wafer grinding step 1006, which is a substrate grinding step. In the method for manufacturing a substrate, first, one or more ingots (four large-diameter ingots 100 in the illustrated embodiment) are prepared.

[0094] Next, in the substrate manufacturing method, each ingot 100 is placed in the first ingot accommodation portion 551 of the transport tray 50, and the transport tray 50 containing the ingots 100 is placed in the transport tray rack 3. At this time, the second surface 103 of the ingot 100 is placed on the first ingot accommodation portion 551. In the substrate manufacturing method of embodiment 1, in the substrate manufacturing system 1, processing conditions are registered in the control unit by an operator or the like. In embodiment 1, in the substrate manufacturing system 1, when the control unit receives an instruction to start the processing operation from an operator or the like, the control unit starts the ingot grinding unit 10.

[0095] (ingot grinding step) 8 is a perspective view schematically showing an ingot grinding step in the method for manufacturing the substrate shown in FIG. The ingot grinding step 1001 is a step for grinding the first surface 102 of the ingot 100. Hereinafter, in the first embodiment, a case will be described in which the first surface 102 of the ingot 100 is not flattened to such an extent that it does not prevent the incidence of the laser beam 21 in the separation layer forming step 1002 (for example, a case after the wafer 200 has been separated from the flattened first surface 102 side of the ingot 100).

[0096] Furthermore, in the substrate manufacturing method of the present invention, if first surface 102 of ingot 100 is flattened to an extent that it does not prevent incidence of laser beam 21 in separation layer forming step 1002, separation layer forming step 1002 is performed without performing ingot grinding step 1001. In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 drives articulated arm 621 of transfer means 62, and inserts suction piece 622 with its suction hole facing upward into tunnel 54 of transport tray 50.

[0097] In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 slightly raises suction pieces 622 in tunnel 54 to suction-hold the lower surface of upper wall 51 of transport tray 50 with suction pieces 622. In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 transports transport tray 50, which has been suction-held with suction pieces 622, from transport tray rack 3 to outbound belt conveyor 611.

[0098] In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 places transport tray 50 on outgoing belt conveyor 611, and then transports transport tray 50 along the Y-axis direction by outgoing belt conveyor 611 to a position facing ingot grinding unit 10 in the X-axis direction. At this time, in embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 raises first transport trace stopper 615, thereby stopping transport tray 50 at a position facing ingot grinding unit 10 in the X-axis direction.

[0099] In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 drives articulated arm 631 of first moving means 617 to suction-hold ingot 100 on transport tray 50 with suction piece 632. In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 moves ingot 100 suction-held with suction piece 632 from transport tray 50 onto holding surface 15 of holding table 12 positioned at the loading / unloading position of ingot grinding unit 10.

[0100] In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 suction-holds second surface 103 of ingot 100 on holding surface 15 of holding table 12. In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 rotates turntable 14 about its axis to move holding table 12, which suction-holds ingot 100, toward the processing position, and stops holding table 12 at the processing position.

[0101] In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 rotates grinding wheel 16 of ingot grinding unit 10 about its axis and rotates holding table 12 about its axis while supplying grinding water, and brings the grinding stone of grinding wheel 16 into contact with first surface 102 of ingot 100 and approaches holding table 12 at a predetermined feed rate, as shown in Fig. 8. In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 grinds the entire surface of first surface 102 of ingot 100 with the grinding stone to flatten first surface 102 of ingot 100.

[0102] In embodiment 1, in ingot grinding step 1001, when the control unit of substrate manufacturing system 1 flattens first surface 102 of ingot 100, substrate manufacturing system 1 raises grinding wheel 16 and stops rotation of holding table 12 about its axis. In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 rotates turntable 14 about its axis to move holding table 12, which holds by suction ingot 100 with flattened first surface 102, toward the loading / unloading position, and stops holding table 12 at the loading / unloading position.

[0103] In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 drives articulated arm 631 of first moving means 617 to suck and hold ingot 100 on holding table 12 positioned at the loading / unloading position with suction piece 632. In embodiment 1, in ingot grinding step 1001, the control unit of substrate manufacturing system 1 stops suction holding of holding table 12 and moves ingot 100 sucked and held by suction piece 632 from holding table 12 to onto first ingot accommodation section 551 of transport tray 50 facing ingot grinding unit 10 in the X-axis direction.

[0104] (Separation layer formation step) Figure 9 is a perspective view schematically showing a separation layer forming step in the manufacturing method of the substrate shown in Figure 7. The separation layer forming step 1002 is a step in which the laser processing unit 20 forms a separation layer 108 inside the ingot 100. In the first embodiment, in the separation layer forming step 1002, the control unit of the substrate manufacturing system 1 lowers the first transport trace stopper 615, and then the outgoing belt conveyor 611 transports the transport tray 50 in the Y-axis direction to a position facing the laser processing unit 20 in the X-axis direction.

[0105] In this case, in the separation layer forming step 1002 in the embodiment 1, the control unit of the substrate manufacturing system 1 raises the second transport trace stopper 616, thereby stopping the transport tray 50 at a position facing the laser processing unit 20 in the X-axis direction. In the embodiment 1, in the separation layer forming step 1002, the control unit of the substrate manufacturing system 1 drives the articulated arm 631 of the second moving means 618 to suction-hold the ingot 100 on the transport tray 50 with the suction piece 632. In the embodiment 1, in the separation layer forming step 1002, the control unit of the substrate manufacturing system 1 moves the ingot 100 suction-held with the suction piece 632 from the transport tray 50 onto the holding surface 25 of the holding table 23 positioned at the load / unload position of the laser processing unit 20.

[0106] In embodiment 1, in separation layer forming step 1002, the control unit of substrate manufacturing system 1 suction-holds second surface 103 of ingot 100 on holding surface 25 of holding table 23, moves holding table 23 toward the processing position, and stops holding table 23 at the processing position. In embodiment 1, in separation layer forming step 1002, the control unit of substrate manufacturing system 1 adjusts the orientation of holding table 23 around its axis so that second orientation flat 106 of ingot 100 is parallel to the X-axis direction.

[0107] 9 , in the separation layer forming step 1002, the control unit of the substrate manufacturing system 1 positions the focal point of the laser beam 21 at a depth within the ingot 100 that corresponds to the thickness of the wafer 200 to be produced, and irradiates the first surface 102 of the ingot 100 with the laser beam 21 from the irradiation unit 24 while moving the irradiation unit 24 and the holding table 23 in the X-axis direction. Then, in the separation layer forming step 1002, the SiC is separated into Si (silicon) and C (carbon) by the irradiation of the pulsed laser beam 21, and the next pulsed laser beam 21 is absorbed by the previously formed C, so that a modified portion 107 in which the SiC is separated into Si and C in a chain reaction is formed within the ingot 100 along the X-axis direction, and a crack extending from the modified portion 107 along the c-plane (not shown) of the ingot 100 is generated.

[0108] Thus, in separation layer forming step 1002, separation layer 108 including modified portion 107 and cracks formed from modified portion 107 along the c-plane is formed inside ingot 100. In embodiment 1, in separation layer forming step 1002, when the control unit forms separation layer 108 over the entire length of ingot 100 in a direction parallel to second orientation flat 106, substrate manufacturing system 1 stops irradiating laser beam 21 and moves irradiation unit 24 and holding table 23 relatively along first orientation flat 105 by a predetermined distance 109 (shown in FIG. 9 ) (hereinafter referred to as index feed).

[0109] In the first embodiment, in the separation layer forming step 1002, the control unit of the substrate manufacturing system 1, after index feeding, positions the focal point of the laser beam 21 at a depth within the ingot 100 corresponding to the thickness of the wafer 200 to be produced, and irradiates the first surface 102 of the ingot 100 with the laser beam 21 from the irradiation unit 24 while moving the irradiation unit 24 and the holding table 23 in the X-axis direction, thereby forming a separation layer 108 within the ingot 100. In the first embodiment, in the separation layer forming step 1002, the control unit of the substrate manufacturing system 1 alternately repeats irradiation of the laser beam 21 and index feeding while moving the irradiation unit 24 and the holding table 23 relatively along the X-axis direction until the separation layer 108 is formed entirely below the first surface 102 of the ingot 100 at predetermined distances 109.

[0110] In the first embodiment, in the separation layer forming step 1002, when the control unit of the substrate manufacturing system 1 forms the separation layer 108 over the entire lower surface of the first surface 102 of the ingot 100, the control unit moves the holding table 23 toward the load / unload position and stops the holding table 23 at the load / unload position. In the first embodiment, in the separation layer forming step 1002, the control unit of the substrate manufacturing system 1 stops the suction holding of the holding table 23 and drives the articulated arm 631 of the second moving means 618 to suction-hold the ingot 100 on the holding table 23 positioned at the load / unload position with the suction piece 632. In the first embodiment, in the separation layer forming step 1002, the control unit of the substrate manufacturing system 1 stops the suction holding of the holding table 23 and moves the ingot 100 suction-held by the suction piece 632 from the holding table 23 onto the first ingot accommodation portion 551 of the transport tray 50 facing the laser processing unit 20 in the X-axis direction.

[0111] (separation step) Fig. 10 is a side view, partially in section, schematically showing a state in which a substrate separation unit applies ultrasonic vibrations to an ingot in the separation step of the method for manufacturing a substrate shown in Fig. 7. Fig. 11 is a side view schematically showing a state in which an ultrasonic wave applying unit of the substrate separation unit suction-holds a first surface of an ingot in the separation step of the method for manufacturing a substrate shown in Fig. 7.

[0112] In embodiment 1, in separation step 1003, the control unit of substrate manufacturing system 1 lowers second transport trace stopper 616, and then transports transport tray 50 in the Y-axis direction by outbound belt conveyor 611 to a position facing substrate separation unit 30 in the X-axis direction. At this time, in embodiment 1, in separation step 1003, the control unit of substrate manufacturing system 1 stops transport tray 50 by first transport means 613 at a position facing substrate separation unit 30 in the X-axis direction.

[0113] In embodiment 1, in separation step 1003, the control unit of substrate manufacturing system 1 drives articulated arm 631 of third moving means 619 to suction-hold ingot 100 on transport tray 50 with suction piece 632. In embodiment 1, in separation step 1003, the control unit of substrate manufacturing system 1 moves ingot 100 suction-held with suction piece 632 from transport tray 50 onto holding surface 35 of holding table 32 positioned at the loading / unloading position of substrate separation unit 30.

[0114] In the separation step 1003 in the embodiment 1, the control unit of the substrate manufacturing system 1 suction-holds the second surface 103 of the ingot 100, on which the separation layer 108 has been formed, on the holding surface 35 of the holding table 32, and also moves the holding table 32 toward the processing position and stops the holding table 32 at the processing position. In the embodiment 1, in the separation step 1003, the control unit of the substrate manufacturing system 1 lowers the liquid tank body 33 to fill the space between the liquid tank body 33 and the holding table 32 with liquid 36.

[0115] In the first embodiment, in the separation step 1003, the control unit of the substrate manufacturing system 1 lowers the ultrasonic wave imparting unit 34, immersing the lower end of the ultrasonic wave imparting unit 34 in the liquid 36 between the liquid tank body 33 and the holding table 32 as shown in Fig. 10 , and drives the ultrasonic wave imparting unit 34 to impart ultrasonic vibrations to the first surface 102 of the ingot 100 through the liquid 36. Then, because a separation layer 108 having a lower mechanical strength than other portions is formed in the ingot 100, the first surface 102 side of the ingot 100 is peeled off starting from the separation layer 108.

[0116] In the first embodiment, in the separation step 1003, the control unit of the substrate manufacturing system 1 applies ultrasonic vibrations to the ingot 100 for a predetermined time, then stops the ultrasonic wave application unit 34 and raises the liquid tank body 33 to discharge the liquid 36. In the first embodiment, in the separation step 1003, the control unit of the substrate manufacturing system 1 further lowers the ultrasonic wave application unit 34 to suction-hold the first surface 102 of the ingot 100 on the lower surface of the ultrasonic wave application unit 34, as shown in FIG.

[0117] In the first embodiment, in the separation step 1003, the control unit of the substrate manufacturing system 1 raises the ultrasonic wave application unit 34 to separate a portion of the ingot 100 including the first side 102 from the ingot 100 as the wafer 200, starting from the separation layer 108. In this manner, the wafer 200 is produced, which has the first side 202 separated from the ingot 100 and the other side 203 which is the first side 102 of the ingot 100. In this manner, in the first embodiment, the surface of the ingot 100 including the separation layer 108 formed inside the ingot 100 is the first side 202 side of the wafer 200. In the first embodiment, in the separation step 1003, the control unit of the substrate manufacturing system 1 moves the holding table 32 toward the load / unload position and stops the holding table 32 at the load / unload position.

[0118] In embodiment 1, in separation step 1003, the control unit of substrate manufacturing system 1 drives articulated arm 631 of third moving means 619 to suction-hold ingot 100 on holding table 32 positioned at the carry-in / out position with suction piece 632. In embodiment 1, in separation step 1003, the control unit of substrate manufacturing system 1 stops suction-holding of holding table 32 and moves ingot 100 suction-held by suction piece 632 from holding table 32 in the X-axis direction onto first ingot accommodation section 551 of transport tray 50 facing substrate separation unit 30 in the X-axis direction.

[0119] Also, in embodiment 1, in separation step 1003, when the control unit of substrate manufacturing system 1 unloads ingot 100 from holding surface 35 of holding table 32, substrate manufacturing system 1 positions holding table 32 at the processing position. In embodiment 1, in separation step 1003, the control unit of substrate manufacturing system 1 places one side 202 of wafer 200 separated from ingot 100 on holding surface 35 of holding table 32 positioned at the processing position, and suction-holds one side 202 of wafer 200 on holding surface 35 of holding table 32.

[0120] In the first embodiment, in the separation step 1003, the control unit of the substrate manufacturing system 1 moves the holding table 32 toward the carry-in / out position and stops the holding table 32 at the carry-in / out position. In the first embodiment, in the separation step 1003, the control unit of the substrate manufacturing system 1 drives the articulated arm 631 of the third moving means 619 to suction-hold the wafer 200 on the holding table 32 positioned at the carry-in / out position with the suction pieces 632. In the first embodiment, in the separation step 1003, the control unit of the substrate manufacturing system 1 stops the suction-holding of the holding table 32 and moves the wafer 200 suction-held by the suction pieces 632 from the holding table 32 in the X-axis direction onto the first wafer accommodation portion 561 of the transport tray 50 facing the substrate separation unit 30 in the X-axis direction. At this time, one surface 202 of the wafer 200 faces downward, and the other surface 203, which is the first surface 102 of the ingot 100, faces upward.

[0121] (Washing step) The cleaning step 1004 is a step of cleaning the wafer 200 separated from the ingot 100 in the cleaning unit 70. The cleaning step 1004 includes a first cleaning step 1004-1, a transfer step 1004-2, and a second cleaning step 1004-3.

[0122] (First cleaning step) Fig. 12 is a perspective view schematically showing a state in which a wafer separated from an ingot is carried into a cleaning unit in the first cleaning step of the cleaning steps in the method for producing a substrate shown in Fig. 7. Fig. 13 is a perspective view schematically showing a state in which one surface of a wafer separated from an ingot is cleaned in the first cleaning step of the cleaning steps in the method for producing a substrate shown in Fig. 7.

[0123] The first cleaning step 1004-1 is a step in which the other side 203 of the wafer 200 is held by the first holding part 73 of the cleaning unit 70, and the one side 202 of the wafer 200 is cleaned. In the first embodiment, in the first cleaning step 1004-1, the control unit of the substrate manufacturing system 1 transports the transport tray 50 containing the ingot 100 and the wafer 200 separated from the ingot 100 from the outgoing belt conveyor 611 to the returning belt conveyor 612 by the first transport means 613.

[0124] In embodiment 1, in first cleaning step 1004-1, the control unit of the substrate manufacturing system 1 transports the transport tray 50 containing the ingot 100 and the wafers 200 separated from the ingot 100 along the Y-axis direction using the return belt conveyor 612 to the end closer to the transport tray rack 3. In embodiment 1, in first cleaning step 1004-1, the control unit of the substrate manufacturing system 1 transports the transport tray 50 containing the ingot 100 and the wafers 200 separated from the ingot 100 from the return belt conveyor 612 to the outgoing belt conveyor 611 using the second transport means 614.

[0125] In the first embodiment, in the first cleaning step 1004-1, the control unit of the substrate manufacturing system 1 sucks and holds the transport tray 50 containing the ingot 100 and the wafers 200 separated from the ingot 100 on the suction piece 622 of the transfer means 62, and transports the transport tray 50 containing the ingot 100 and the wafers 200 separated from the ingot 100 from the outbound belt conveyor 611 to the corresponding accommodation section 4 of the transport tray rack 3. In the first embodiment, in the first cleaning step 1004-1, the control unit of the substrate manufacturing system 1 sucks and holds the other side 203 of the wafer 200 in the transport tray 50 in the transport tray rack 3 on the suction piece 622 of the transfer means 62.

[0126] In the first embodiment, in the first cleaning step 1004-1, the control unit of the substrate manufacturing system 1 removes the wafer 200, whose other surface 203 is suction-held by the suction piece 622 of the transfer means 62, from the transport tray 50 in the transport tray rack 3. In the first cleaning step 1004-1, the control unit of the substrate manufacturing system 1 rotates the suction piece 622 of the transfer means 62 by 180 degrees around its axis to turn the suction piece 622 upside down, exposing the one surface 202 of the wafer 200 upward, and loads the wafer 200 into the cleaning unit 70 through the loading / unloading opening 721, as shown in FIG.

[0127] At this time, the control unit of the substrate manufacturing system 1 positions the first cleaning section 76 and the second cleaning section 77 of the cleaning unit 70 in a retracted position, positions the first holding section 73 at the lowest position, and positions the second holding section 74 at the highest position.

[0128] In the first embodiment, in the first cleaning step 1004-1, the control unit of the substrate manufacturing system 1 places the wafer 200, whose other side 203 is suction-held by the suction piece 622 of the transfer means 62, on the suction pad 732 of the first holding part 73, and suction-holds the other side 203 of the wafer 200 to the first holding part 73. In the first embodiment, in the first cleaning step 1004-1, the control unit of the substrate manufacturing system 1 retracts the suction piece 622 of the transfer means 62 from between the holding parts 73 and 74, positions the first cleaning part 76 and the second cleaning part 77 to their cleaning positions, and cleans the one side 202 of the wafer 200, which is suction-held by the first holding part 73, by the first cleaning part 76, as shown in FIG.

[0129] (Re-grab step) Fig. 14 is a perspective view schematically showing a changing step in the method for manufacturing the substrate shown in Fig. 7. The changing step 1004-2 is a step in which the wafer 200 is changed from the first holder 73 to the second holder 74.

[0130] In the first embodiment, in the changeover step 1004-2, the control unit of the substrate manufacturing system 1 positions the first cleaning unit 76 and the second cleaning unit 77 at the retracted positions. In the first embodiment, in the changeover step 1004-2, the control unit of the substrate manufacturing system 1 raises the first holding unit 73 that holds the other side 203 of the wafer 200 by suction, and brings the one side 202 of the wafer 200 into contact with the suction pad 742 of the second holding unit 74, as shown in FIG.

[0131] In embodiment 1, in the changing step 1004-2, the control unit of the substrate manufacturing system 1 causes the suction pad 742 of the second holding unit 74 to hold one side 202 of the wafer 200 by suction, and stops the suction pad 732 of the first holding unit 73 from holding the other side 203 of the wafer 200 by suction. In embodiment 1, in the changing step 1004-2, the control unit of the substrate manufacturing system 1 lowers the first holding unit 73.

[0132] (Second washing step) Fig. 15 is a perspective view schematically showing the second cleaning step of the method for manufacturing the substrate shown in Fig. 7. The second cleaning step 1004-3 is a step that follows the first cleaning step 1004-1, in which the second holding unit 74 holds the one surface 202 of the wafer 200, and the second cleaning unit 77 cleans the other surface 203 of the wafer 200.

[0133] In the first embodiment, in the second cleaning step 1004-3, the control unit of the substrate manufacturing system 1 positions the first cleaning unit 76 and the second cleaning unit 77 at the cleaning positions, and then, as shown in Fig. 15, the second cleaning unit 77 cleans the other side 203 of the wafer 200 held by suction on the second holder 74, and then dries the one side 202. Note that in the first embodiment, in the second cleaning step 1004-3, the second cleaning unit 77 cleans the other side 203 while gas is ejected from the gas ejection nozzle 80 toward the one side 202 of the wafer 200. Therefore, in the first embodiment, it is possible to prevent dirt and cleaning liquid generated during cleaning of the other side 203 from adhering to the cleaned one side 202.

[0134] In embodiment 1, in the second cleaning step 1004-3, after the control unit has cleaned the other side 203 of the wafer 200, the substrate manufacturing system 1 stops the gas from being ejected from the gas ejection nozzle 80 and positions the first cleaning section 76 and the second cleaning section 77 in the retracted positions.

[0135] (Containment Step) Fig. 16 is a perspective view schematically showing the accommodation step of the method for manufacturing the substrate shown in Fig. 7. In the accommodation step 1005, the wafer 200 cleaned in the cleaning step 1004 is accommodated in the substrate accommodation part 40.

[0136] In the first embodiment, in the accommodation step 1005, the control unit of the substrate manufacturing system 1 causes the suction piece 622 of the transfer means 62 to suction-hold the one side 202 of the wafer 200 that is suction-held by the second holder 74, and stops the suction-holding of the wafer 200 by the second holder 74. Therefore, in the first embodiment, by holding the one side 202 that will be ground in the next process, it is possible to prevent contamination from adhering to the other side 203 that has already been ground. In the first embodiment, in the accommodation step 1005, the control unit of the substrate manufacturing system 1 exposes the one side 202 of the wafer 200 upward, and carries the wafer 200 out of the cleaning unit 70 through the loading / unloading opening 721, as shown in FIG.

[0137] In embodiment 1, in the accommodation step 1005, the control unit of the substrate manufacturing system 1 accommodates the wafer 200, one side 202 of which is suction-held by the suction piece 622 of the transfer means 62, in a cassette 2 (in embodiment 1, a cassette 2 having the same identification mark 42) corresponding to the transport tray 50 in which the wafer 200 was accommodated after being separated from the ingot 100 in the accommodation section 41 of the substrate accommodation section 40 by the transfer means 62.

[0138] In this way, the substrate manufacturing system 1 repeats the ingot grinding step 1001, the separation layer forming step 1002, the separation step 1003, the cleaning step 1004, and the accommodation step 1005 until the thickness of the ingot 100 accommodated in the transport tray 50 becomes less than the thickness of the wafer 200.

[0139] (Wafer grinding step) The wafer grinding step 1006 is a step of grinding one side 202 of the wafer 200 that has been separated from the ingot 100 and cleaned by the cleaning unit 70. In the first embodiment, the wafer grinding step 1006 involves transporting the cassette 2 containing the wafer 200 to a grinding device (not shown) that is separate from the substrate manufacturing system 1, and grinding the one side 202 of the wafer 200 contained in the cassette 2 by this grinding device.

[0140] As described above, in the substrate manufacturing system 1 and substrate manufacturing method according to embodiment 1, before the wafers 200, 201 are accommodated in the cassette 2 in the substrate accommodation section 40 in the accommodation step 1005, the wafers 200, 201 are cleaned by the cleaning unit 70 in the cleaning step 1004.

[0141] As a result, the substrate manufacturing system 1 and substrate manufacturing method of embodiment 1 can suppress the remaining of foreign matter on the manufactured wafers 200, 201 when manufacturing substrates such as wafers 200, 201 from workpieces such as ingots 100, 101.

[0142] It is also possible to carry out the cleaning step 1004 immediately before the wafer grinding step 1006, but in this case, there is a risk that dirt will become stuck if it dries after time has passed between the separation of the wafers 200, 201 from the ingots 100, 101 and the wafer grinding step 1006.

[0143] However, in the substrate manufacturing system 1 and substrate manufacturing method according to embodiment 1, the wafers 200, 201 are cleaned by the cleaning unit 70 in the cleaning step 1004 before being placed in the cassette 2 in the substrate accommodating section 40 in the accommodation step 1005, thereby preventing dirt generated during separation from the ingots 100, 101 from adhering to the wafers 200, 201.

[0144] Furthermore, even if the wafers 200, 201 are cleaned in the substrate separation unit 30, there is a problem that foreign matter adhering to the transport tray 50 adheres to the wafers 200, 201. However, in the substrate manufacturing system 1 and the substrate manufacturing method according to the first embodiment, the wafers 200, 201 are cleaned by the cleaning unit 70 in the cleaning step 1004 before the wafers 200, 201 are placed in the cassette 2 in the substrate accommodating section 40 in the accommodation step 1005. Therefore, even if foreign matter in the transport tray 50 adheres to the wafers 200, 201, the foreign matter can be removed from the wafers 200, 201.

[0145] When performing the second cleaning step 1004-3, the first holding unit 73 located below the second cleaning position may be contaminated with cleaning liquid or dirt. Therefore, the substrate manufacturing system 1 and the substrate manufacturing method according to the first embodiment hold the other surface 203 side, which has already been ground, with the second holding unit 74 located above and clean it later, thereby reducing the risk of dirt adhering to the other surface 203 side.

[0146] The present invention is not limited to the above-described embodiment, and can be implemented in various modifications without departing from the gist of the present invention.

[0147] 17, in the method for manufacturing a substrate according to the present invention, after performing the second cleaning step 1004-3 of the cleaning step 1004, the first cleaning step 1004-1 may be performed, and in the transfer step 1004-2, the wafers 200, 201 may be transferred from the second holder 74 to the first holder 73. Thus, in the transfer step 1004-2 according to the present invention, it is sufficient to transfer the wafers 200, 201 from either the first holder 73 or the second holder 74 to the other.

[0148] Fig. 17 is a flowchart showing the flow of a modified example of the method for manufacturing the substrate shown in Fig. 7. In Fig. 17, the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. [Explanation of symbols]

[0149] 1. Circuit board manufacturing system 20 Laser processing unit 21 Laser beam 30 Substrate separation unit 40 Substrate storage section 60 Transport Unit 70 Cleaning Unit 73 1st holding part 74 Second holding part 75 Mobile Units 76 First Cleaning Section 77 Second Cleaning Section 80 Gas jet nozzle 100,101 Ingot (workpiece) 108 Separation layer 200, 201 Wafer (substrate) 202 One page 203 Other side 1002 Separation layer formation step 1003 Separation Step 1004 cleaning steps 1004-1 First cleaning step 1004-2 Change of Hand Step 1004-3 Second cleaning step 1005 Containment Step

Claims

1. A substrate manufacturing system for manufacturing a substrate having a thickness less than a thickness of a workpiece from the workpiece, a laser processing unit that irradiates the workpiece with a laser beam having a wavelength that transmits the workpiece to form a separation layer inside the workpiece; a substrate separation unit that separates the substrate from the workpiece starting from the separation layer; a substrate accommodating section for accommodating the substrate; a cleaning unit that cleans the substrate accommodated in the substrate accommodation unit; a transfer unit that transfers the workpiece and / or the substrate between the laser processing unit, the substrate separation unit, the substrate accommodation unit, and the cleaning unit;

2. The cleaning unit comprises: a first holding portion that holds the other surface of the substrate while exposing the one surface of the substrate; a second holding portion that holds the one surface side of the substrate so as to expose the other surface side opposite to the one surface side of the substrate; a first cleaning unit that cleans the one surface side of the substrate; The substrate manufacturing system according to claim 1 , further comprising: a second cleaning unit that cleans the other surface of the substrate.

3. The cleaning unit comprises: The substrate manufacturing system according to claim 2 , further comprising a moving unit that moves the first holding unit and the second holding unit relative to each other.

4. the first holding part holds the substrate at a first cleaning position with the one surface facing vertically upward; the second holding part holds the substrate at a second cleaning position located above the first cleaning position, with the other surface side facing vertically downward; The substrate manufacturing system according to claim 3 , wherein the first cleaning unit and the second cleaning unit clean the one surface side or the other surface side from between the first cleaning position and the second cleaning position in the vertical direction.

5. When the substrate is held at the second cleaning position, The substrate manufacturing system according to claim 4 , further comprising a gas ejection nozzle that ejects gas onto the one surface side of the substrate from above the second cleaning position.

6. 6. A substrate manufacturing method for manufacturing a substrate having a thickness less than a thickness of a workpiece from a workpiece using the substrate manufacturing system according to claim 1, a separation layer forming step of forming a separation layer inside the workpiece by the laser processing unit; a separating step of separating the substrate from the workpiece on which the separation layer is formed in the substrate separating unit; a cleaning step of cleaning the substrate in the cleaning unit; and a step of accommodating the cleaned substrate in the substrate accommodating section.

7. A substrate manufacturing method for manufacturing a substrate having a thickness less than a thickness of a workpiece from a workpiece using the substrate manufacturing system according to any one of claims 2 to 5, a separation layer forming step of forming a separation layer inside the workpiece by the laser processing unit; a separating step of separating the substrate from the workpiece on which the separation layer is formed in the substrate separating unit; a cleaning step of cleaning the substrate in the cleaning unit; and a housing step of housing the cleaned substrate in the substrate housing part, The washing step comprises: a first cleaning step of cleaning the one surface side of the substrate while holding the other surface side of the substrate with the first holding part; a second cleaning step of cleaning the other surface side of the substrate while holding the one surface side of the substrate with the second holding part; and a transfer step of transferring the substrate from one of the first holding part and the second holding part to the other.

8. 6. A substrate manufacturing method for manufacturing a substrate having a thickness less than a thickness of a workpiece from a workpiece using the substrate manufacturing system according to claim 4 or 5, comprising: a separation layer forming step of forming a separation layer inside the workpiece by the laser processing unit; a separating step of separating the substrate from the workpiece on which the separation layer is formed in the substrate separating unit; a cleaning step of cleaning the substrate in the cleaning unit; and a housing step of housing the cleaned substrate in the substrate housing part, The washing step comprises: a first cleaning step of cleaning the one surface side of the substrate while holding the other surface side of the substrate with the first holding part; a second cleaning step of cleaning the other surface side of the substrate while holding the one surface side of the substrate with the second holding part after the first cleaning step; and a transferring step of transferring the substrate from the first holding part to the second holding part.

9. The method for manufacturing a substrate according to claim 8 , wherein the surface including the separation layer is the one surface.

10. A substrate manufacturing method for manufacturing a substrate having a thickness less than a thickness of a workpiece from a workpiece using the substrate manufacturing system according to claim 5, a separation layer forming step of forming a separation layer inside the workpiece by the laser processing unit; a separating step of separating the substrate from the workpiece on which the separation layer is formed in the substrate separating unit; a cleaning step of cleaning the substrate in the cleaning unit; and a housing step of housing the cleaned substrate in the substrate housing part, The washing step comprises: a surface of the substrate including the separation layer as the one surface side, a first cleaning step of holding the other surface of the substrate with the first holding unit and cleaning the one surface of the substrate with the first cleaning unit; a second cleaning step in which, after the first cleaning step, the one surface side of the substrate is held by the second holding unit and the other surface side of the substrate is cleaned by the second cleaning unit; a transfer step of transferring the substrate from the first holding part to the second holding part, In the second cleaning step, cleaning of the other surface side of the substrate is carried out while the gas is being ejected from the gas ejection nozzle onto the one surface side of the substrate.

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