laser light source

Abstract

A laser light source having a pattern showing information relating to a semiconductor structure is less likely to cause a pattern reading error. [Solution] The laser light source comprises a semiconductor structure having an upper surface, a first electrode provided on the upper surface of the semiconductor structure, and a first metal portion provided on the first electrode, wherein the semiconductor structure includes a semiconductor layer that emits light, a portion of the first electrode is exposed from the first metal portion, and a pattern indicating information about the semiconductor structure is provided in the area where the portion of the first electrode is exposed.

Description

[Technical Field]

[0001] The present disclosure relates to laser light sources. [Background technology]

[0002] For example, in a laser light source having a semiconductor structure, the semiconductor structure is fabricated by dividing a large number of regions arranged in a matrix on a semiconductor wafer. To facilitate traceability of the semiconductor structure, a pattern indicating information about the semiconductor structure, such as position information on the semiconductor wafer, may be formed on the semiconductor structure (Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-216448 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure aims to reduce the likelihood of pattern reading errors in a laser light source having a pattern that displays information about a semiconductor structure. [Means for solving the problem]

[0005] A laser light source according to one embodiment of the present disclosure comprises a semiconductor structure having an upper surface, a first electrode provided on the upper surface of the semiconductor structure, and a first metal portion provided on the first electrode, wherein the semiconductor structure includes a semiconductor layer that emits light, a portion of the first electrode is exposed from the first metal portion, and a pattern indicating information about the semiconductor structure is provided in the area where the portion of the first electrode is exposed. [Effects of the Invention]

[0006] According to an embodiment of the present disclosure, in a laser light source having a pattern that indicates information about a semiconductor structure, it is possible to reduce the occurrence of pattern reading errors. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a top view illustrating a laser light source according to a first embodiment. [Figure 2] FIG. 2 is a cross-sectional view taken along line II-II in FIG. [Figure 3] FIG. 2 is a cross-sectional view taken along the line III-III in FIG. [Figure 4] FIG. 1 is a cross-sectional view (1) illustrating a laser light source according to a second embodiment. [Figure 5] FIG. 10 is a cross-sectional view (2) illustrating the laser light source according to the second embodiment. [Figure 6] 1 is a cross-sectional view (1) illustrating an example of a power supply method in a laser light source 2. FIG. [Figure 7] 10 is a cross-sectional view (2) illustrating an example of a power supply method in the laser light source 2. FIG. [Figure 8] 10 is a cross-sectional view (3) illustrating an example of a power supply method in the laser light source 2. FIG. [Figure 9] 4 is a cross-sectional view (4) illustrating an example of a power supply method in the laser light source 2. FIG. [Figure 10] 10 is a top view illustrating an example of a power supply method in the laser light source 3. FIG. [Figure 11] FIG. 11 is a cross-sectional view taken along the line XI-XI in FIG. [Figure 12] 12 is a cross-sectional view taken along the line XII-XII in FIG. 10. [Figure 13] 1 is a cross-sectional view illustrating an example of a package that houses a semiconductor structure 10. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, a description of an embodiment of the invention will be given with reference to the drawings. In the following description, terms indicating specific directions or positions (e.g., "upper," "lower," and other terms including these terms) will be used as necessary. However, the use of these terms is intended to facilitate understanding of the invention with reference to the drawings, and the meaning of these terms does not unduly limit the technical scope of the present invention. For example, when the term "upper surface" is used, it does not necessarily mean that the invention must always be used facing upward. Furthermore, parts with the same reference numerals appearing in multiple drawings indicate the same or equivalent parts or components.

[0009] Furthermore, the embodiments described below are intended to exemplify laser light sources and the like to embody the technical concepts of the present invention, and are not intended to limit the scope of the present invention. Furthermore, unless otherwise specified, the dimensions, materials, shapes, relative arrangements, and the like of the components described below are intended for illustrative purposes only and are not intended to limit the scope of the present invention. Furthermore, the content described in one embodiment may also be applied to other embodiments and modified examples. Furthermore, the sizes and positional relationships of components shown in the drawings may be exaggerated for clarity. Furthermore, to avoid overly complex drawings, schematic diagrams may be used in which some elements are omitted, or end views may be used as cross-sectional views showing only the cut surface.

[0010] First Embodiment A laser light source 1 will be described as an example of a laser light source according to the present disclosure. Fig. 1 is a top view illustrating a laser light source according to a first embodiment. Fig. 2 is a cross-sectional view taken along line II-II in Fig. 1. Fig. 3 is a cross-sectional view taken along line III-III in Fig. 1.

[0011] 1 to 3, the laser light source 1 has, as a minimum configuration, a semiconductor structure 10 having an upper surface 10a and a lower surface 10b, a first electrode 20 provided on the upper surface 10a of the semiconductor structure 10, and a first metal portion 30 provided on the first electrode 20. The semiconductor structure 10 is a part of a semiconductor laser element, and includes a substrate 11 and a semiconductor layer 12 that emits light.

[0012] In the example shown in FIGS. 1 to 3, the laser light source 1 further includes a second electrode 40 and a second metal portion 50. The semiconductor structure 10 further includes a contact layer 13 and an insulating layer 14. The second electrode 40 is provided on the lower surface 10b of the semiconductor structure 10. The second electrode 40 is bonded to the semiconductor layer 12, for example, via the contact layer 13. In a top view, the area of ​​the contact layer 13 is smaller than the areas of the semiconductor layer 12 and the second electrode 40. The insulating layer 14 is disposed around the contact layer 13. The second metal portion 50 is provided on the opposite side of the semiconductor structure 10 with respect to the second electrode 40. That is, the second metal portion 50 is provided on the lower surface of the second electrode 40.

[0013] In the laser light source 1, an opening 30x is provided in the first metal part 30. A part of the first electrode 20 and a part of the substrate 11 are exposed through the opening 30x in the first metal part 30. A pattern P indicating information about the semiconductor structure 10 is provided in the area where the part of the first electrode 20 is exposed. More specifically, an opening 20x is provided in the first electrode 20. The opening 20x is provided within the opening 30x, i.e., in the area where the part of the first electrode 20 is exposed, and a part of the substrate 11 of the semiconductor structure 10 is exposed through the opening 20x. The semiconductor structure 10 exposed through the opening 20x constitutes the pattern P. The pattern P can be formed, for example, by photolithography when forming the first electrode 20. With this configuration, the substrate 11 and the first electrode 20 can be used as the pattern P, eliminating the need to prepare a separate member for providing the pattern P.

[0014] The pattern P is, for example, a data matrix. The pattern P indicates, for example, electrical characteristic data of the semiconductor structure 10, manufacturing conditions of the semiconductor structure 10, or position information of the semiconductor structure 10 within the wafer. When measuring electrical characteristics during manufacturing of the semiconductor structure 10, providing the electrical characteristic data as pattern P on the semiconductor structure 10 allows the electrical characteristic data at the time of manufacturing the semiconductor structure 10 to be known after manufacturing. Furthermore, providing information regarding the manufacturing conditions for manufacturing the semiconductor structure 10 as pattern P on the semiconductor structure 10 allows the manufacturing conditions of the semiconductor structure 10 to be known after manufacturing. Furthermore, when manufacturing a plurality of semiconductor structures 10 by forming them on a single wafer and then dicing them, providing pattern P on each semiconductor structure 10 before dicing allows the position of the diced semiconductor structure 10 within the wafer to be known after dicing. This improves the traceability of the semiconductor structure 10. The pattern P may be, for example, a two-dimensional code, character, or symbol other than a data matrix.

[0015] Furthermore, in the laser light source 1, a first metal portion 30 is provided on the first electrode 20, and a pattern P is disposed within the opening 30x of the first metal portion 30. This makes it difficult for the pattern P to come into contact with objects outside the laser light source 1, reducing the chances of the pattern P being scratched or having foreign matter adhered to it. This makes it less likely that an error will occur in reading the pattern P.

[0016] Each component of the laser light source 1 will be described.

[0017] (Semiconductor structure 10) The semiconductor structure 10 is an edge-emitting laser element. The top surface 10a and bottom surface 10b of the semiconductor structure 10 are, for example, parallel to each other. The semiconductor structure 10 has, for example, a rectangular shape when viewed from above. A side surface including one of the two short sides of the rectangle serves as a light emission surface for light emitted from the semiconductor structure 10. The top surface 10a and bottom surface 10b of the semiconductor structure 10 have areas larger than that of the light emission surface.

[0018] In the semiconductor structure 10, a semiconductor layer 12 is provided below a substrate 11. The substrate 11 can be composed of, for example, an n-type semiconductor substrate. Examples of n-type semiconductor substrates include a GaAs substrate, an InP substrate, and a GaP substrate. The substrate 11 is lattice-matched to the semiconductor layer 12, which can improve the crystallinity of the semiconductor layer 12. The substrate 11 preferably has a color that provides a high contrast with the first electrode 20. For example, the color of the substrate 11 is primarily black or gray, and the color of the first electrode 20 is primarily white or yellow. For example, the substrate 11 preferably has a lower reflectance (e.g., 20% to 50%) than the first electrode 20 for visible light including red light, and the first electrode 20 preferably has a higher reflectance (e.g., 60% to 100%) than the substrate 11 for visible light including red light. Red light refers to, for example, light having a wavelength of 600 nm or more and 780 nm or less. This configuration makes the boundary between the substrate 11 and the first electrode 20 clear, making the pattern P easier to read.

[0019] The semiconductor layer 12 is provided on the lower surface of the substrate 11. The semiconductor layer 12 emits, for example, red or infrared light. Red or infrared light refers to light with a wavelength of 600 nm or more. In the illustrated example, the semiconductor layer 12 includes, for example, an n-type first cladding layer 12a, an active layer 12b, and a p-type second cladding layer 12c, which are stacked in this order on the lower surface side of the substrate 11. Each of the first cladding layer 12a, the active layer 12b, and the second cladding layer 12c is made of, for example, (Al x ,Ga 1-x ) y In 1-y (P z ,As 1-z ) (0≦x, y, z≦1), the composition ratios x, y, and z are varied within their respective ranges. The active layer 12b may have a single quantum well (SQW) structure or a multiple quantum well (MQW) structure including multiple well layers. The semiconductor layer 12 may have, for example, a resonator.

[0020] In the illustrated example, the contact layer 13 is provided so as to contact a portion of the lower surface of the second cladding layer 12c. The contact layer 13 does not have to be in direct contact with the second cladding layer 12c, and another layer may be present between them. The contact layer 13 may be made of, for example, GaAs, GaP, or the like. The insulating layer 14 is provided around the region of the lower surface of the second cladding layer 12c where the contact layer 13 is provided. The insulating layer 14 may be made of, for example, SiO2, ZrO2, SiN, Al2O3, AlN, diamond, or the like. The insulating layer 14 may also have a structure in which two or more of these materials are stacked.

[0021] The semiconductor structure 10 can be fabricated by epitaxially growing each layer on the substrate 11 using, for example, an MOCVD apparatus.

[0022] (1st electrode 20) The first electrode 20 is provided on the upper surface of the substrate 11 constituting the semiconductor structure 10. As shown in the figure, the first electrode 20 may be partially embedded in the substrate 11. When the first electrode 20 is partially embedded in the substrate 11, the first electrode 20 can be provided, for example, by patterning the substrate 11 using photolithography, wet-etching the substrate 11 to remove foreign matter from the surface of the substrate 11, and then depositing the first electrode 20. The first electrode 20 may be provided so that a portion of the first electrode 20 is not embedded in the substrate 11 and the lower surface thereof is in contact with the upper surface of the substrate 11. In other words, the portion of the upper surface of the substrate 11 that is in contact with the first electrode 20 and the portion that is not in contact with the first electrode 20 may be at the same height. The first electrode 20 functions, for example, as an N-side electrode. The first electrode 20 can be made of, for example, AuGe, Ni, Ti, Mo, W, Pd, Pt, Au, or the like. The first electrode 20 may have a structure in which two or more of these materials are stacked. The first electrode 20 can be provided on the upper surface of the substrate 11 by, for example, sputtering.

[0023] (1st metal part 30) The first metal portion 30 may be provided on a portion of the upper surface of the first electrode 20. For example, when viewed from above, the outer periphery of the upper surface of the first electrode 20 may be exposed from the first metal portion 30. The first metal portion 30 may be provided on the entire upper surface of the first electrode 20. The first metal portion 30 functions, for example, as a pad connecting to metal wiring for supplying power to the laser light source 1. In another example, the first metal portion 30 is joined to the first heat dissipation member 100. The first metal portion 30 may be made of, for example, Au. The first metal portion 30 may be provided on the upper surface of the first electrode 20 by, for example, plating or sputtering. The first metal portion 30 is preferably thicker than the first electrode 20. This reduces the possibility that the pattern P will come into contact with external objects, etc. From the viewpoint of making it less likely that the pattern P will come into contact with external objects, etc., of the laser light source 1, the thickness of the first metal portion 30 is preferably 1 μm or more. The opening 30x provided in the first metal part 30 has, for example, a rectangular shape when viewed from above. Note that the rectangular shape also includes a square. The lengths of the short and long sides of the opening 30x may be, for example, within a range of 100 μm to 200 μm.

[0024] (2nd electrode 40) The second electrode 40 functions as a P-side electrode. The second electrode 40 can be made of, for example, Ni, Ti, Mo, W, Pd, Pt, Au, ITO, or the like. The second electrode 40 may have a structure in which two or more of these materials are stacked. The second electrode 40 can be provided on the lower surfaces of the contact layer 13 and the insulating layer 14 by, for example, a sputtering method. The second electrode 40 is bonded to the second cladding layer 12c constituting the semiconductor layer 12, for example, via the contact layer 13. This configuration allows for appropriate power supply to the semiconductor structure 10.

[0025] (Second metal part 50) The second metal portion 50 may be provided on a portion of the lower surface of the second electrode 40. For example, the outer periphery of the lower surface of the second electrode 40 may be exposed from the second metal portion 50 when viewed from below. The second metal portion 50 may be provided on the entire lower surface of the second electrode 40. The second metal portion 50 functions, for example, as a pad connecting to metal wiring for supplying power to the laser light source 1. In another example, the second metal portion 50 is bonded to the second heat dissipation member 200. The second metal portion 50 may be made of, for example, Au. The second metal portion 50 may be provided on the lower surface of the second electrode 40 by, for example, plating or sputtering. The second metal portion 50 is preferably thicker than the second electrode 40. The thickness of the second metal portion 50 may be the same as the thickness of the first metal portion 30. Here, the term "same thickness" includes a case where the difference in thickness is 0.5 μm or less. By providing the second metal part 50, the structure becomes symmetrical between the upper and lower sides of the semiconductor structure 10 where the first metal part 30 is provided, and the warping of the substrate due to the second metal part 50 and the warping of the substrate due to the first metal part 30 become equivalent, thereby reducing the warping of the semiconductor structure 10.

[0026] Second Embodiment As another example of a laser light source according to the present disclosure, a laser light source 2 will be described. Fig. 4 is a cross-sectional view (1) illustrating a laser light source according to a second embodiment, showing a cross section corresponding to Fig. 2. Fig. 5 is a cross-sectional view (2) illustrating a laser light source according to the second embodiment, showing a cross section corresponding to Fig. 3.

[0027] As shown in FIGS. 4 and 5, the laser light source 2 differs from the laser light source 1 in that the laser light source 2 includes a first heat dissipation member 100 and a second heat dissipation member 200. As shown in FIG.

[0028] The first heat dissipation member 100 is provided on the first metal part 30 so as to cover the pattern P shown in FIG. 1 in top view. By providing the first heat dissipation member 100 so as to cover the pattern P, the efficiency of heat dissipation by the first heat dissipation member 100 is improved. The first heat dissipation member 100 is, for example, a rectangular parallelepiped. In the example shown, the entire first metal part 30 overlaps with the first heat dissipation member 100 in top view. With this configuration, the efficiency of heat dissipation from the first metal part 30 by the first heat dissipation member 100 is improved. The first heat dissipation member 100 includes a first intermediate layer 101 and a first metal film 102 provided on the lower surface of the first intermediate layer 101. In the example shown, the first heat dissipation member 100 includes a second metal film 103 provided on the upper surface of the first intermediate layer 101. In the illustrated example, the first metal film 102 is electrically connected to the second metal film 103 via a metal film located on the side surface of the first intermediate layer 101. The first metal film 102 located on the underside of the first intermediate layer 101 is joined to the first metal portion 30 via a conductive first bonding member 110. This configuration strengthens the bond between the first heat dissipation member 100 and the first metal portion 30. In the illustrated example, the first bonding member 110 forms a fillet along the outer surface of the first metal portion 30 and the inner surface of the first metal portion 30 that defines the opening 30x. The first bonding member 110 does not contact the pattern P.

[0029] The second heat dissipation member 200 is provided on the opposite side of the second metal part 50 from the second electrode 40. By providing the second heat dissipation member 200, the upper and lower sides of the semiconductor structure 10 on which the first heat dissipation member 100 is provided are structurally symmetrical. This makes the warping of the substrate due to the second heat dissipation member 200 and the warping of the substrate due to the first heat dissipation member 100 equivalent, thereby reducing the warping of the semiconductor structure 10. The second heat dissipation member 200 is, for example, a rectangular parallelepiped. The thickness of the second heat dissipation member 200 may or may not be the same as that of the first heat dissipation member 100. In the illustrated example, the entire second metal part 50 overlaps with the second heat dissipation member 200 in a top view. This configuration improves the efficiency of heat dissipation from the second metal part 50 by the second heat dissipation member 200. The second heat dissipation member 200 includes a second intermediate layer 201 and a third metal film 202 provided on the upper surface of the second intermediate layer 201. In the illustrated example, the second heat dissipation member 200 further includes a fourth metal film 203 provided on the lower surface of the second intermediate layer 201. The third metal film 202 is bonded to the second metal portion 50 via a conductive second bonding member 210. This configuration strengthens the bond between the third metal film 202 and the second metal portion 50. In the illustrated example, the second bonding member 210 forms a fillet along the side surface of the second metal portion 50. The semiconductor structure 10 may also be provided so as to protrude from the second heat dissipation member 200. This structure reduces the possibility that the second heat dissipation member 200 will block light emitted from the semiconductor structure 10.

[0030] The first intermediate layer 101 can be made of, for example, AlN, SiC, Al2O3, SiN, graphite, diamond, etc., and is preferably made of AlN, SiC, graphite, diamond, etc. This improves the heat dissipation properties of the first intermediate layer 101. The first intermediate layer 101 may have a structure in which two or more of these materials are stacked. The first intermediate layer 101 may also be made of a metal such as Cu. The same applies to the second intermediate layer 201. The first metal film 102 can be made of, for example, AuSn, Au, Ag, Cu, solder, a metal nanomaterial, etc. The first metal film 102 may have a structure in which two or more of these materials are stacked. The same applies to the third metal film 202 and the fourth metal film 203. The first bonding member 110 can be made of, for example, AuSn, solder, a metal nanomaterial, etc. The same applies to the second bonding member 210.

[0031] The thermal conductivity of the first heat dissipation member 100 and the second heat dissipation member 200 can be, for example, 10 W / m·K or more and 2500 W / m·K or less, preferably 100 W / m·K or more and 2500 W / m·K or less. With such thermal conductivity, the first heat dissipation member 100 and the second heat dissipation member 200 can efficiently transfer heat generated from the semiconductor structure 10 when the laser light source 1 emits light. In particular, in the case of a semiconductor structure 10 in which the semiconductor layer 12 emits red or infrared light, the temperature-dependent change in characteristics such as optical output is significant. Therefore, providing the first heat dissipation member 100 and the second heat dissipation member 200 to dissipate heat from both the top and bottom of the semiconductor structure 10 is effective in improving heat dissipation. The laser light source 2 may include only one of the first heat dissipation member 100 and the second heat dissipation member 200.

[0032] In the laser light source 2, the first heat dissipation member 100 is provided on the first metal part 30 so as to cover the pattern P in a top view, and therefore the pattern P cannot be read as it is. For example, if it is desired to read the pattern P in order to analyze information about the laser light source 2, it is necessary to peel off the first bonding member 110 and the first heat dissipation member 100.

[0033] For example, in a typical laser light source, if the first metal portion 30 is not present and the first heat dissipation member 100 is provided directly on the first electrode 20 via the first bonding member 110, the first bonding member 110 may come into contact with and bury the pattern P. When the first bonding member 110 comes into contact with the pattern P, it is difficult to completely remove the first bonding member 110 that is in contact with the pattern P when peeling off the first bonding member 110 and the first heat dissipation member 100. As a result, a portion of the first bonding member 110 remains on the pattern P, which makes it more likely that a reading error will occur when reading the pattern P.

[0034] In contrast, in the laser light source 2, the first metal portion 30 is provided on the first electrode 20, and the first heat dissipation member 100 is provided on the first metal portion 30 via the first bonding member 110. Therefore, by adjusting the thickness of the first metal portion 30 and / or the amount of the first bonding member 110, it is easy to prevent the first bonding member 110 from contacting the pattern P. Because the first bonding member 110 is not in contact with the pattern P, when the first bonding member 110 and the first heat dissipation member 100 are peeled off, the pattern P, to which no residue of the first bonding member 110 is attached, is exposed in the opening 30x of the first metal portion 30. As a result, reading errors of the pattern P can be made less likely to occur when reading the pattern P.

[0035] Here, an example of a power supply method in the laser light source 2 will be described. In the laser light source 2, the first heat dissipation member 100 includes a second metal film 103 provided on the upper surface of the first intermediate layer 101, and the second metal film 103 is electrically connected to the first metal film 102. With this configuration, the first heat dissipation member 100 can also be used as a power supply member to the semiconductor structure 10. A specific power supply method will be described below. FIG. 6 is a cross-sectional view (1) illustrating an example of a power supply method in the laser light source 2, and shows a cross section corresponding to FIG. 4. FIG. 6 shows a method of supplying power to the first electrode 20. In the example shown in FIG. 6, a metal wire 310 is bonded to the second metal film 103 located on the upper surface of the first intermediate layer 101 in the first heat dissipation member 100. The metal wire 310 is, for example, a gold wire or a copper wire, and can be bonded to the second metal film 103 by wire bonding. Power can be supplied to the first electrode 20 from the metal wire 310, sequentially via the second metal film 103 located on the top surface of the first intermediate layer 101, the metal film located on the side surface, the first metal film 102 located on the bottom surface, the conductive first bonding member 110, and the first metal portion 30. With this configuration, the surface of the first heat dissipation member 100 can be used as a power supply path to the semiconductor structure 10, eliminating the need to provide any other power supply path inside the first intermediate layer 101.

[0036] FIG. 7 is a cross-sectional view (2) illustrating an example of a power supply method in the laser light source 2, and shows a cross section corresponding to FIG. 4. In the example of FIG. 6, the first metal film 102 is connected to the second metal film 103 via a metal film located from the lower surface of the first intermediate layer 101 to the side surface. However, instead, the configuration shown in FIG. 7 may be used. In the example of FIG. 7, the first metal film 102 is provided on the lower surface of the first intermediate layer 101, and the second metal film 103 is provided on the upper surface. The first metal film 102 and the second metal film 103 are electrically connected via a via electrode 105 that penetrates the first intermediate layer 101. A metal wire 310 is bonded to the first metal film 102. Note that no metal film is provided on the side surface of the first intermediate layer 101. 7, power can be supplied to the first electrode 20 from the metal wire 310, sequentially passing through the second metal film 103, the via electrode 105, the first metal film 102, the conductive first bonding member 110, and the first metal portion 30. With this configuration, the power supply path from the second metal film 103 to the first metal film 102 can be protected by the first intermediate layer 101.

[0037] FIG. 8 is a cross-sectional view (3) illustrating an example of a power supply method in the laser light source 2, and shows a cross section corresponding to FIG. 5. FIG. 8 shows a method of supplying power to the second electrode 40. In the example shown in FIG. 8, a metal wire 320 is bonded to the third metal film 202 located on the upper surface of the second intermediate layer 201 in the second heat dissipation member 200. The metal wire 320 is, for example, a gold wire or a copper wire, and can be bonded to the third metal film 202 by a wire bonding technique. Power can be supplied to the second electrode 40 from the metal wire 320 sequentially via the third metal film 202, the conductive second bonding member 210, and the second metal portion 50.

[0038] FIG. 9 is a cross-sectional view (4) illustrating a laser light source according to the second embodiment, showing a cross section corresponding to FIG. 5. FIG. 9 shows a method of supplying power to the first electrode 20 and the second electrode 40. The method of supplying power to the first electrode 20 may be the method shown in FIG. 9 instead of the methods shown in FIGS. 6 and 7. In the example shown in FIG. 9, a metal wire 310 is bonded to a first metal film 102 located on the lower surface of a first intermediate layer 101 in a first heat dissipation member 100. Power can be supplied from the metal wire 310 to the first electrode 20 via the first metal film 102, the conductive first bonding member 110, and the first metal portion 30 in this order. In FIG. 9, the method of supplying power to the second electrode 40 is the same as that shown in FIG. 8.

[0039] Fig. 10 is a top view illustrating an example of a power supply method in the laser light source 3. Fig. 11 is a cross-sectional view taken along line XI-XI in Fig. 10. Fig. 12 is a cross-sectional view taken along line XII-XII in Fig. 10.

[0040] As shown in FIGS. 10 to 12, the laser light source 3 differs from the laser light source 2 in that it does not have a first heat dissipation member 100. In the example shown in FIGS. 10 to 12, the first metal portion 30 is exposed on the outermost surface, and therefore a metal wire 310 is joined to the first metal portion 30. Power can be supplied from the metal wire 310 to the first electrode 20 via the first metal portion 30. In FIGS. 10 to 12, the method of supplying power to the second electrode 40 is the same as in FIG. 8.

[0041] FIG. 13 is a cross-sectional view illustrating an example of a package in which a semiconductor structure 10 is disposed. As shown in FIG. 13, the package 400 includes a base 410 and a frame 420. The package 400 also includes a reflective member 440 and a light-transmitting member 430. The reflective member 440 reflects light emitted from the semiconductor structure 10 upward. The light-transmitting member 430 transmits the light reflected by the reflective member 440. Disposing the semiconductor structure 10 inside the package 400 can protect the semiconductor structure 10 from contamination. The package 400 may further include a lens or other component.

[0042] Although the preferred embodiments have been described in detail above, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the claims.

[0043] In addition to the above-described embodiments, the following supplementary notes are also disclosed. (Appendix 1) a semiconductor structure having a top surface; a first electrode provided on a top surface of the semiconductor structure; a first metal portion provided on the first electrode, the semiconductor structure includes a light-emitting semiconductor layer; A laser light source, wherein a portion of the first electrode is exposed from the first metal portion, and a pattern indicating information about the semiconductor structure is provided in the area where the portion of the first electrode is exposed. (Appendix 2) the first electrode has an opening, the opening being provided in a region where a portion of the first electrode is exposed, and a portion of the semiconductor structure is exposed from the opening; 2. The laser light source of claim 1, wherein the semiconductor structure exposed from the opening constitutes the pattern. (Appendix 3) 3. The laser light source according to claim 1, further comprising a first heat dissipation member provided on the first metal portion so as to cover the pattern when viewed from above. (Appendix 4) the first heat dissipation member includes a first intermediate layer and a first metal film provided on a lower surface of the first intermediate layer; 4. The laser light source according to claim 3, wherein the first metal film is joined to the first metal portion via a conductive first joining member. (Appendix 5) the first heat dissipation member includes a second metal film provided on an upper surface of the first intermediate layer; 5. The laser light source according to claim 4, wherein the second metal film is electrically connected to the first metal film. (Appendix 6) the semiconductor structure further has a lower surface; a second electrode provided on the lower surface; a second metal portion provided on the second electrode on the opposite side to the semiconductor structure; 6. The laser light source according to claim 1, further comprising: a second heat dissipation member provided on the opposite side of the second metal part from the second electrode. (Appendix 7) the semiconductor structure includes a substrate; the first electrode is provided on an upper surface of the substrate, the semiconductor layer is provided on a lower surface of the substrate, the semiconductor layer includes a first cladding layer, an active layer, and a second cladding layer, which are sequentially stacked on the lower surface side of the substrate; 7. The laser light source according to claim 6, wherein the second electrode is bonded to the second clad layer via a contact layer. (Appendix 8) the semiconductor layer emits red or infrared laser light, the substrate is lattice-matched to the semiconductor layer, 8. The laser light source according to claim 7, wherein a portion of the substrate is exposed from the first metal portion. (Appendix 9) the second heat dissipation member includes a second intermediate layer and a third metal film provided on an upper surface of the second intermediate layer; 9. The laser light source according to claim 6, wherein the third metal film is joined to the second metal portion via a conductive second joining member. [Explanation of symbols]

[0044] 1,2,3 Laser light source 10 Semiconductor structure 10a Top 10b Bottom side 11 Circuit Board 12 Semiconductor layer 12a First cladding layer 12b Active layer 12c Second cladding layer 13 Contact layer 14 Insulating layer 20 1st electrode 20x opening 30 1st metal part 30x opening 40 2nd electrode 50 2nd metal part 100 First heat dissipation member 101 First Middle Class 102 First metal film 103 Second metal film 105 Via electrode 110 First joining member 200 Second heat dissipation member 201 Second Middle Class 202 Third metal film 203 Fourth metal film 210 Second joining member 310,320 Metal wire 400 packages 410 base 420 Frame 430 Translucent material 440 Reflective material

Claims

1. a semiconductor structure having a top surface; a first electrode disposed on a top surface of the semiconductor structure; a first metal portion provided on the first electrode, the semiconductor structure includes a light-emitting semiconductor layer; A laser light source, wherein a portion of the first electrode is exposed from the first metal portion, and a pattern indicating information about the semiconductor structure is provided in the area where the portion of the first electrode is exposed.

2. the first electrode has an opening, the opening being provided in a region where a portion of the first electrode is exposed, and a portion of the semiconductor structure is exposed from the opening; The laser light source of claim 1 , wherein the semiconductor structure exposed from the opening constitutes the pattern.

3. The laser light source according to claim 1 , further comprising a first heat dissipation member provided on the first metal portion so as to cover the pattern in a top view.

4. the first heat dissipation member includes a first intermediate layer and a first metal film provided on a lower surface of the first intermediate layer; The laser light source according to claim 3 , wherein the first metal film is joined to the first metal portion via a first conductive joining member.

5. the first heat dissipation member includes a second metal film provided on an upper surface of the first intermediate layer, The laser light source according to claim 4 , wherein the second metal film is electrically connected to the first metal film.

6. the semiconductor structure further has a lower surface; a second electrode provided on the lower surface; a second metal portion provided on the second electrode on the opposite side from the semiconductor structure; The laser light source according to claim 1 , further comprising: a second heat dissipation member provided on the second metal portion on the opposite side to the second electrode.

7. the semiconductor structure includes a substrate; the first electrode is provided on an upper surface of the substrate; the semiconductor layer is provided on a lower surface of the substrate, the semiconductor layer includes a first cladding layer, an active layer, and a second cladding layer, which are sequentially stacked on the lower surface side of the substrate; The laser light source according to claim 6 , wherein the second electrode is bonded to the second cladding layer via a contact layer.

8. the semiconductor layer emits red or infrared laser light, the substrate is lattice-matched to the semiconductor layer, The laser light source according to claim 7 , wherein a part of the substrate is exposed from the first metal portion.

9. the second heat dissipation member includes a second intermediate layer and a third metal film provided on an upper surface of the second intermediate layer; The laser light source according to claim 6 , wherein the third metal film is joined to the second metal portion via a conductive second joining member.

Images