Joining System

Abstract

To provide a technology that can reduce the footprint of a joining system. [Solution] A bonding system according to one aspect of the present disclosure includes a processing station that performs a given process on a first substrate and a second substrate, and a load / unload station that loads the first substrate, the second substrate, and an overlapped substrate formed by bonding the first substrate and the second substrate into and out of the processing station. The processing station includes a transport device that transports the first substrate, the second substrate, and the overlapped substrate, a transfer section that transfers the first substrate, the second substrate, and the overlapped substrate between the load / unload station and the transport device, an application device that applies adhesive to the first substrate, a bonding device that bonds the adhesive-coated first substrate and the second substrate to form the overlapped substrate, and a heat treatment device that heat-treats the first substrate, the second substrate, and the overlapped substrate. The heat treatment device and the bonding device are arranged in a stacked configuration.

Description

[Technical Field]

[0001] The present disclosure relates to joint systems. [Background technology]

[0002] In recent years, for example, in the manufacturing process of semiconductor devices, substrates to be processed, such as silicon wafers and compound semiconductor wafers, have become larger in diameter and thinner. Large-diameter, thin substrates to be processed may warp or crack during transportation and polishing. For this reason, the substrate to be processed is reinforced by bonding a support substrate, such as a glass substrate, to the substrate.

[0003] The substrate to be processed and the supporting substrate are bonded using a bonding device. A bonding system has also been disclosed that integrates the bonding device, a transport device that transports the substrate to be processed and the supporting substrate, an adhesive coating device that coats the substrate to be processed with adhesive, and a heat treatment device that heats the substrate to which the adhesive has been coated (see Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-46531 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides techniques that allow for a smaller footprint for the joint system. [Means for solving the problem]

[0006] A bonding system according to one aspect of the present disclosure includes a processing station and a loading / unloading station. The processing station performs a given process on a first substrate and a second substrate. The loading / unloading station loads the first substrate, the second substrate, and a laminated substrate formed by bonding the first substrate and the second substrate into and out of the processing station. The processing station also includes a transport device, a transfer unit, a coating device, a bonding device, and a heat treatment device. The transport device transports the first substrate, the second substrate, and the laminated substrate. The transfer unit transfers the first substrate, the second substrate, and the laminated substrate between the loading / unloading station and the transport device. The coating device applies an adhesive to the first substrate. The bonding device bonds the first substrate, to which the adhesive has been applied, to the second substrate to form the laminated substrate. The heat treatment device heat-treats the first substrate, the second substrate, and the laminated substrate. The heat treatment device and the bonding device are arranged in a stacked configuration. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to reduce the footprint of a joint system. Note that the effects described herein are not necessarily limited to those described herein, and any of the effects described in the present disclosure may be achieved. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic plan view showing an example of the configuration of a bonding system according to an embodiment. [Figure 2] FIG. 2 is a schematic side view of the laminated substrate according to the embodiment. [Figure 3] FIG. 3 is a cross-sectional view taken along line AA in FIG. [Figure 4] FIG. 4 is a cross-sectional view taken along line BB in FIG. [Figure 5] FIG. 5 is a cross-sectional view taken along line CC in FIG. [Figure 6] FIG. 6 is a cross-sectional view taken along line DD in FIG. [Figure 7]FIG. 7 is a schematic cross-sectional view showing an example of the configuration of a coating apparatus according to an embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view showing an example of the configuration of a heat treatment apparatus according to an embodiment. [Figure 9] FIG. 9 is a schematic plan view showing an example of the configuration of the heat treatment apparatus according to the embodiment. [Figure 10] FIG. 10 is a schematic cross-sectional view showing an example of the configuration of a joining device according to an embodiment. [Figure 11] FIG. 11 is a schematic cross-sectional view showing an example of the configuration of a joining device according to an embodiment. [Figure 12] FIG. 12 is a schematic side view illustrating an example of the configuration of the second transfer device according to the embodiment. [Figure 13] FIG. 13 is a schematic side view showing another example of the configuration of the second transfer device according to the embodiment. [Figure 14] FIG. 14 is a flowchart illustrating a procedure of a process executed by the joint system according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the joining system disclosed in the present application will be described in detail with reference to the accompanying drawings. Note that the present disclosure is not limited to the embodiments shown below. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of each element may differ from reality. Furthermore, the drawings may include parts with different dimensional relationships and ratios.

[0010] In addition, in the drawings referred to below, for ease of understanding, an orthogonal coordinate system may be shown in which the X-axis, Y-axis, and Z-axis directions are defined as being perpendicular to each other, and the positive Z-axis direction is the vertically upward direction.

[0011] In recent years, for example, in the manufacturing process of semiconductor devices, substrates to be processed, such as silicon wafers and compound semiconductor wafers, have become larger in diameter and thinner. Large-diameter, thin substrates to be processed may warp or crack during transportation and polishing. For this reason, the substrate to be processed is reinforced by bonding a support substrate, such as a glass substrate, to the substrate.

[0012] The bonding of the workpiece substrate and the support substrate is performed using a bonding device. The bonding device holds the support substrate and the workpiece substrate with, for example, an upper chuck and a lower chuck, respectively, and then moves the upper chuck or the lower chuck to press the workpiece substrate and the support substrate together. An adhesive is applied to the surface of the workpiece substrate or the support substrate, and the two are bonded by pressing the workpiece substrate and the support substrate together as described above.

[0013] In addition to this bonding device, a bonding system is disclosed that integrates a transport device that transports the substrate to be processed and the support substrate, an application device that applies adhesive to the substrate to be processed, and a heat treatment device that heats the substrate to which the adhesive has been applied.

[0014] On the other hand, the above-mentioned conventional technology has room for further improvement in terms of reducing the footprint, which is the proportion of the floor area of ​​a clean room or the like that the bonding system occupies.

[0015] Therefore, there is a need for a technology that can overcome the above-mentioned problems and reduce the footprint of the joining system.

[0016] <Outline of the joining system> First, an overview of a bonding system 1 according to an embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a schematic plan view showing an example of the configuration of a bonding system 1 according to an embodiment, and Fig. 2 is a schematic side view of a laminated substrate T according to an embodiment.

[0017] 2, the bonding system 1 shown in Fig. 1 forms a laminated substrate T by bonding a support substrate S and a device substrate W via an adhesive G, a protective agent P, and a release agent R. The support substrate S is an example of a first substrate, and the device substrate W is an example of a second substrate.

[0018] The device substrate W is a substrate in which multiple electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, and the surface of the plate on which the electronic circuits are formed is the bonding surface Wj with the support substrate S.

[0019] After the device substrate W is bonded to the support substrate S, the non-bonding surface Wn, which is the surface opposite to the bonding surface Wj, is polished to be thinned.

[0020] The support substrate S has approximately the same diameter as the device substrate W, and supports the device substrate W. As the support substrate S, for example, a glass substrate, a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, or the like can be used.

[0021] The adhesive G is applied to the bonding surface Sj of the support substrate S with the device substrate W. The adhesive G is, for example, a thermosetting resin adhesive. Here, thermosetting refers to the property of a material that is difficult to deform at room temperature (for example, about 20°C), but softens and becomes easily moldable when heated, and when further heated, polymerization progresses and the material hardens, never returning to its original state.

[0022] The adhesive G used in the bonding system 1 has a softening temperature of about 120 to 140°C and a hardening temperature of about 180°C, for example.

[0023] The protective agent P is applied to the bonding surface Wj of the device substrate W. The protective agent P is applied to the bonding surface Wj of the device substrate W for the purpose of protecting the circuits, bumps, and the like formed on the bonding surface Wj of the device substrate W.

[0024] The protective agent P is made of a material that has lower adhesive strength and viscosity than the adhesive G. The protective agent P is soluble in organic solvents such as thinner, and does not harden even when heated.

[0025] The release agent R is applied to the surface of the protective agent P. The release agent R is applied for the purpose of smoothly separating the device substrate W from the support substrate S when separating the laminated substrate T into the device substrate W and the support substrate S.

[0026] The release agent R is made of a material that has lower adhesive strength and viscosity than the adhesive G. The release agent R is soluble in organic solvents such as thinner, and does not harden even when heated. The release agent R is made of a material that has lower adhesive strength than the protective agent P.

[0027] The release agent R has a lower adhesive strength than the adhesive G, and therefore, if the release agent R is applied thickly, the bonding strength of the laminated substrate T will be weakened. For this reason, it is preferable to apply the release agent R thinly.

[0028] Returning to the description of Fig. 1, as shown in Fig. 1, the bonding system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are integrally connected in this order in the positive direction of the X axis.

[0029] The loading / unloading station 2 has a mounting table 21 and a first transfer area 22. The mounting table 21 is a place where a plurality of cassettes C, each containing a plurality of substrates (for example, 25 substrates) in a horizontal position, are placed.

[0030] Of the multiple cassettes C, cassette C1 contains, for example, a support substrate S. Of the multiple cassettes C, cassette C2 contains, for example, a device substrate W. Of the multiple cassettes C, cassette C3 contains, for example, a laminated substrate T.

[0031] Of the multiple cassettes C, the cassette C4 contains, for example, a defective substrate. The number of cassettes C placed on the placement table 21 is not limited to that shown in the figure.

[0032] The first transport region 22 is located, for example, adjacent to the mounting table 21 on the positive side of the X axis. In the first transport region 22, a transport path 23 extending in the Y axis direction and a first transport device 24 movable along the transport path 23 are located. The first transport device 24 is an example of another transport device. The first transport device 24 is movable not only in the Y axis direction but also in the X axis direction and is rotatable around the Z axis.

[0033] The first transfer device 24 transfers the device substrate W, the support substrate S, and the overlapped substrate T between the plurality of cassettes C placed on the mounting table 21 and a third processing block G3 of the processing station 3, which will be described later.

[0034] For example, three processing blocks G1, G2, and G3 are provided in the processing station 3. The first processing block G1 is located, for example, on the rear side of the processing station 3 (the positive Y-axis direction side in FIG. 1).

[0035] The second processing block G2 is located, for example, on the front side (the negative Y-axis direction side in FIG. 1) of the processing station 3. The detailed configurations of the first processing block G1 and the second processing block G2 will be described later.

[0036] The third processing block G3 is located, for example, on the load / unload station 2 side of the processing station 3 (the negative X-axis direction side in FIG. 1). The third processing block G3 has a transfer unit 31 and a first inspection unit 32. The first inspection unit 32 is an example of an inspection unit.

[0037] The delivery section 31 is located between the first transfer region 22 and a second transfer region 60, which will be described later. In the delivery section 31, the device substrate W, the support substrate S, and the laminated substrate T are delivered between the first transfer device 24 located in the first transfer region 22 and the second transfer device 61 located in the second transfer region 60.

[0038] That is, the delivery unit 31 is accessible from both the first conveying device 24 and the second conveying device 61. On the other hand, the first inspection unit 32 is not accessible from the second conveying device 61, but is accessible only from the first conveying device 24. The detailed configurations of the delivery unit 31 and the first inspection unit 32 will be described later.

[0039] A second transfer region 60 is located in the area surrounded by the first processing block G1, the second processing block G2, and the third processing block G3. The second transfer region 60 is an example of a transfer region. A second transfer device 61 is located in the second transfer region 60. The second transfer device 61 is an example of a transfer device. The second transfer device 61 has an arm 61c (see FIG. 12) that is movable, for example, vertically, horizontally, and around a vertical axis.

[0040] The second transport device 61 moves within the second transport region 60 and transports the device substrate W, support substrate S and laminated substrate T to the desired apparatus located in the first processing block G1, second processing block G2 and third processing block G3 adjacent to the second transport region 60.

[0041] The joint system 1 also includes a control device 4. The control device 4 controls the operation of the joint system 1. The control device 4 is, for example, a computer, and includes a control unit 5 and a storage unit 6.

[0042] The control unit 5 includes a microcomputer and various circuits that have a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, etc. The CPU of the microcomputer reads and executes programs stored in the ROM to realize the control described below.

[0043] The storage unit 6 is realized by a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

[0044] The program executed by the control unit 5 may be recorded on a computer-readable recording medium and installed from that recording medium into the storage unit 6 of the control device 4. Examples of computer-readable recording media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0045] <Details of the joining system> Next, a detailed configuration of the joint system 1 according to the embodiment will be described with reference to Figures 3 to 6 in addition to Figures 1 and 2. Figures 3 to 6 are cross-sectional views taken along the arrows AA, BB, CC, and DD shown in Figure 1, respectively.

[0046] 3 is a diagram showing the configurations of the first processing block G1, first inspection unit 32, and second inspection unit 33 shown in Fig. 1, and Fig. 4 is a diagram showing the configurations of the delivery unit 31 and second transfer area 60 shown in Fig. 1. Also, Fig. 5 is a diagram showing the configurations of the second processing block G2 and the remaining third processing block G3 shown in Fig. 1, and Fig. 6 is a diagram showing the configurations of the first processing block G1, second transfer area 60, and second processing block G2 shown in Fig. 1.

[0047] As shown in Fig. 6, the first processing block G1 is located on the first surface 60a side of the second transfer region 60. As shown in Figs. 3 and 6, the first processing block G1 has a plurality of heat treatment devices 41, a plurality of bonding devices 42, and a second inspection unit 33. In the drawings in this disclosure, the heat treatment devices 41 are referred to as "OVEN" and the bonding devices 42 are referred to as "BONDER."

[0048] The heat treatment device 41 is a device that heats the support substrate S (see FIG. 2), the device substrate W (see FIG. 2), and the laminated substrate T (see FIG. 2) to a given temperature. The bonding device 42 is a device that bonds the device substrate W and the support substrate S via a protective agent P (see FIG. 2), a release agent R (see FIG. 2), and an adhesive G (see FIG. 2).

[0049] 3, the bonding system 1 according to the embodiment is provided with, for example, eight heat treatment devices 41 and two bonding devices 42. In the embodiment, for example, the two bonding devices 42 are positioned side by side along the X-axis direction below the first processing block G1.

[0050] In the example of Figure 3 etc., an example is shown in which two joining devices 42 are positioned side by side along the horizontal direction, but the present disclosure is not limited to such an example, and for example, three or more joining devices 42 may be positioned side by side along the horizontal direction.

[0051] In the embodiment, the heat treatment device 41 and the bonding device 42 are arranged in a stacked manner. For example, in the embodiment, the heat treatment device 41 is arranged above the bonding device 42. Specifically, in the embodiment, three heat treatment devices 41 are arranged in a stacked manner above one bonding device 42.

[0052] In the example of Figure 3 etc., an example is shown in which three heat treatment devices 41 are stacked above one bonding device 42, but the present disclosure is not limited to such an example, and for example, one, two, or four or more heat treatment devices 41 may be stacked above one bonding device 42.

[0053] In the present disclosure, the heat treatment device 41 is not limited to being arranged above the bonding device 42, but may be arranged below the bonding device 42. Detailed configurations of the heat treatment device 41 and the bonding device 42 will be described later.

[0054] 3, the second inspection unit 33 is located, for example, in the first processing block G1, between the heat treatment unit 41 and the bonding unit 42. The second inspection unit 33 has a film thickness measurement unit 85 and a periphery inspection unit 86. In the drawings in this disclosure, the film thickness measurement unit 85 is referred to as "BTM," and the periphery inspection unit 86 is referred to as "WIS."

[0055] The film thickness measuring device 85 is a device that measures the film thickness and uniformity of the adhesive G applied to the support substrate S. The peripheral portion inspection device 86 is a device that measures the state of the adhesive G removed from the peripheral portion of the support substrate S (for example, the dimensions of the area from which the adhesive G has been removed and the variation in these dimensions).

[0056] 6, the second processing block G2 is located on the second surface 60b side of the second transfer region 60. The second surface 60b is the surface opposite to the first surface 60a.

[0057] 5 and 6, the second processing block G2 has a plurality of coating devices 51 and one drain device 52. In the drawings of the present disclosure, the coating device 51 is referred to as "SPIN" and the drain device 52 is referred to as "DRAIN."

[0058] The coating device 51 is a device that coats an adhesive G (see FIG. 2) on a support substrate S (see FIG. 2) and coats a protective agent P (see FIG. 2) and a release agent R (see FIG. 2) on a device substrate W (see FIG. 2). The drain device 52 is a device that discharges various processing liquids used in the multiple coating devices 51 to the outside.

[0059] 5, the bonding system 1 according to the embodiment is provided with, for example, six coating devices 51 and one drain device 52. In the embodiment, the one drain device 52 is located below the second processing block G2.

[0060] In the embodiment, the coating device 51 is disposed above the drain device 52. Specifically, in the embodiment, six coating devices 51 are stacked in two groups of three on one drain device 52. The detailed configuration of the coating device 51 will be described later.

[0061] As shown in FIG. 4, the delivery section 31 has an inverting delivery device 71, an inverting alignment device 72, an alignment device 73, multiple (three in the figure) delivery devices 74, multiple (two in the figure) cooling devices 75, a temporary placement device 76, and a jig accommodating device 77.

[0062] In the figures of this disclosure, the reverse transfer device 71 is referred to as "RTRS", the reverse alignment device 72 is referred to as "RNAM", the alignment device 73 is referred to as "NAM", the transfer device 74 is referred to as "TRS", and the cooling device 75 is referred to as "CPL".

[0063] In addition, in the drawings of the present disclosure, the temporary placement device 76 is referred to as "THS," and the jig receiving device 77 is referred to as "CWH." Furthermore, in the drawings of the present disclosure, the first transfer device 24 is referred to as "CRA," and the second transfer device 61 is referred to as "PRA."

[0064] The reversing and transferring device 71 is a device on which the device substrate W, the support substrate S, or the overlapping substrate T that is transferred between the first transfer device 24 and the second transfer device 61 is temporarily placed. Furthermore, the reversing and transferring device 71 has a mechanism for reversing the placed device substrate W, the support substrate S, or the overlapping substrate T.

[0065] The inversion alignment device 72 is a device that performs alignment processing on the support substrate S. The inversion alignment device 72 has, for example, a holding unit that sucks, holds, and rotates the support substrate S, a detection unit that detects the position of the notch portion of the support substrate S, and an inversion mechanism that inverts the support substrate S held by the holding unit.

[0066] The inversion alignment device 72 detects the position of the notch portion of the support substrate S with a detection unit while rotating the support substrate S held by suction on a holding unit, and thereby adjusts the position of the notch portion, thereby adjusting the horizontal orientation of the support substrate S. Furthermore, the inversion alignment device 72 can invert the support substrate S upside down with an inversion mechanism.

[0067] The alignment device 73 is a device that performs alignment processing on the device substrate W. The alignment device 73 has, for example, a holding unit that sucks, holds, and rotates the device substrate W, and a detection unit that detects the position of the notch portion of the device substrate W.

[0068] The alignment device 73 detects the position of the notch portion of the device substrate W using the detection unit while rotating the device substrate W held by suction in the holding unit, and thereby adjusts the position of the notch portion and adjusts the horizontal orientation of the device substrate W.

[0069] The delivery device 74 is a device on which the device substrate W, the support substrate S, or the laminated substrate T is temporarily placed, which is delivered between the first transfer device 24 and the second transfer device 61. The cooling device 75 is a device that cools the temperature of the laminated substrate T to a given temperature.

[0070] The temporary placement device 76 is a device on which a device substrate W, a support substrate S, or a laminated substrate T is temporarily placed in order to correct the positional deviation of the substrate when the position of the substrate is significantly deviated from the specified position during or after transportation. The jig storage device 77 is a device for storing various jigs such as dummy substrates.

[0071] 3, the first inspection unit 32 has a thickness measurement device 81, an ID reading device 82, a temporary placement device 83, and a periphery measurement device 84. In the drawings of the present disclosure, the thickness measurement device 81 is referred to as "TTV," the ID reading device 82 is referred to as "WID," the temporary placement device 83 is referred to as "THS," and the periphery measurement device 84 is referred to as "ECM."

[0072] The thickness measuring device 81 is a device that measures the variation in the thickness of the adhesive G on the laminated substrate T. The thickness measuring device 81 measures, for example, the TTV (Total Thickness Variation: the difference between the maximum and minimum thickness values ​​over the entire surface of the laminated substrate T) of the laminated substrate T.

[0073] The ID reading device 82 is a device that reads identification information attached to the support substrate S and the device substrate W. The temporary placement device 83 is a device on which the device substrate W, the support substrate S, or the laminated substrate T is temporarily placed in order to correct the positional deviation of the substrate when the position of the substrate is significantly deviated from the specified position during or after transportation.

[0074] The peripheral portion measuring device 84 measures the peripheral portion of the overlapped substrate T in order to observe the bonding state of the overlapped substrate T. The peripheral portion measuring device 84 may directly measure the peripheral portion of the overlapped substrate T using, for example, a laser displacement meter, or may capture an image of the peripheral portion of the overlapped substrate T from the side using a camera or the like and calculate the dimensions of the peripheral portion from the captured projected image.

[0075] 5, the third processing block G3 has, in addition to the above-mentioned delivery unit 31 (see FIG. 4) and first inspection unit 32 (see FIG. 3), a chemical liquid supplying device 91 and a cooling device 92. In the drawings of the present disclosure, the chemical liquid supplying device 91 is referred to as "CHE" and the cooling device 92 is referred to as "CHI."

[0076] The chemical liquid supplying device 91 supplies various chemical liquids to various devices (such as the coating device 51) in the bonding system 1. The cooling device 92 cools various chemical liquids supplied from the chemical liquid supplying device 91 to the inside of the bonding system 1, for example.

[0077] 3 to 6, a utility area 95 is located at the bottom of the second processing block G2, the third processing block G3, and the second transfer area 60. In the drawings of the present disclosure, the utility area 95 is referred to as "UTIL." Electrical wiring, gas piping, and the like are located in this utility area 95.

[0078] Although not shown in FIGS. 3 to 6, the ceiling portion of the joint system 1 may be provided with an FFU (Fan Filter Unit) and an electrical system.

[0079] The FFU supplies dry air, from which particles and the like have been removed, from above into the inside of the bonding system 1. This supplied dry air forms a clean downflow inside the bonding system 1. The electrical system includes, for example, a distribution panel, a breaker, and an ammeter.

[0080] In the conventional bonding system, the heat treatment device and the bonding device are arranged side by side, which increases the footprint. In contrast, in the bonding system 1 according to the embodiment, as shown in FIG. 3 etc., the heat treatment device 41 and the bonding device 42 are arranged in a stacked manner inside the bonding system 1.

[0081] Therefore, the joint system 1 according to the embodiment can have a smaller footprint than conventional joint systems.

[0082] In addition, in the embodiment, the heat treatment device 41 may be disposed above the bonding device 42. This can prevent the bonding device 42 from excessively increasing in temperature due to heat transferred upward from inside the heat treatment device 41. Therefore, according to the embodiment, the bonding process in the bonding device 42 can be performed with high accuracy.

[0083] In addition, in an embodiment, as shown in Figure 6, the heat treatment device 41 and the bonding device 42 may be located on the first surface 60a side of the second transport region 60, and the coating device 51 may be located on the second surface 60b side of the second transport region 60.

[0084] This allows the support substrate S, on which the adhesive G has been applied in the application device 51, and the device substrate W, on which the protective agent P and the release agent R have been applied, to be quickly transported to the heat treatment device 41. Therefore, according to the embodiment, the heat treatment after application can be quickly performed, and therefore the adhesive G, the protective agent P, and the release agent R can be applied with high precision.

[0085] Furthermore, in the conventional bonding system, a reversal alignment device is provided inside each of the bonding devices, which results in an increase in the footprint of the entire plurality of bonding devices.

[0086] In contrast to this, in the bonding system 1 according to the embodiment, as shown in FIG. 4, one inversion alignment device 72 that can be used in common by all bonding devices 42 is arranged in the delivery section 31 of the third processing block G3.

[0087] Therefore, the joint system 1 according to the embodiment can have a smaller footprint than conventional joint systems.

[0088] Furthermore, in conventional bonding systems, an alignment device is provided inside each of the bonding devices, which results in an increase in the footprint of the entire plurality of bonding devices.

[0089] In contrast to this, in the bonding system 1 according to the embodiment, as shown in FIG. 4, one alignment device 73 that can be used in common by all bonding devices 42 is arranged in the delivery section 31 of the third processing block G3.

[0090] Therefore, the joint system 1 according to the embodiment can have a smaller footprint than conventional joint systems.

[0091] In the embodiment, a cooling device 75 for cooling the laminated substrate T may be provided in the transfer section 31 so as to be stacked with other devices. This allows the footprint of the bonding system 1 to be further reduced.

[0092] In addition, in an embodiment, the first inspection section 32, which inspects at least one of the support substrate S, the device substrate W, and the laminated substrate T, may not be accessible from the second conveying device 61, but may only be accessible from the first conveying device 24.

[0093] This allows the first inspection unit 32, which can inspect various types of substrates, to be placed inside the bonding system 1 without increasing the footprint of the first processing block G1, second processing block G2, and delivery unit 31, where other equipment must be placed.

[0094] Therefore, according to the embodiment, the footprint of the joint system 1 can be further reduced.

[0095] In the embodiment, a thickness measuring device 81 for measuring variations in the thickness of the adhesive G on the laminated substrate T may be provided in the first inspection section 32 that is accessible only from the first transport device 24.

[0096] This allows the thickness measuring device 81 to be placed inside the joining system 1 without increasing the footprint of the first processing block G1, second processing block G2, and delivery section 31, where other devices must be placed.

[0097] Therefore, according to the embodiment, the footprint of the joint system 1 can be further reduced.

[0098] In the embodiment, an ID reader 82 that reads the identification information of the device substrate W and the support substrate S may be provided in the first inspection section 32 that is accessible only from the first transport device 24.

[0099] This allows the ID reader 82 to be placed inside the joining system 1 without increasing the footprint of the first processing block G1, second processing block G2, and delivery section 31, where other devices must be placed.

[0100] Therefore, according to the embodiment, the footprint of the joint system 1 can be further reduced.

[0101] <Coating equipment> Next, the configuration of a coating apparatus 51 according to an embodiment will be described with reference to Fig. 7. Fig. 7 is a schematic cross-sectional view showing an example of the configuration of a coating apparatus 51 according to an embodiment. As shown in Fig. 7, the coating apparatus 51 includes a chamber 101, a substrate holding mechanism 102, a liquid supply unit 103, a collection cup 104, and a periphery cleaning unit 105.

[0102] The chamber 101 houses a substrate holding mechanism 102, a liquid supply unit 103, a collection cup 104, and a peripheral cleaning unit 105. An FFU (not shown) is provided on the ceiling of the chamber 101. The FFU creates a clean downflow inside the chamber 101.

[0103] The substrate holding mechanism 102 is provided approximately in the center of the chamber 101, and includes a holding part 102a, a support member 102b, and a driving part 102c.

[0104] The holding unit 102a is, for example, a porous chuck, and adsorbs and holds the device substrate W and the support substrate S. The support member 102b is a member extending in the vertical direction, and its base end is rotatably supported by the driving unit 102c, and its tip supports the holding unit 102a horizontally.

[0105] The driving unit 102c rotates the support member 102b around a vertical axis. The substrate holding mechanism 102 rotates the support member 102b using the driving unit 102c, thereby rotating the holder 102a supported by the support member 102b.

[0106] This rotates the device substrate W and the support substrate S held by the holding portion 102a. The device substrate W and the support substrate S are held by the substrate holding mechanism 102 with their bonding surfaces Wj (see FIG. 2) and Sj (see FIG. 2) facing upward, respectively.

[0107] The liquid supply unit 103 supplies adhesive G (see Figure 2) to the support substrate S held by the substrate holding mechanism 102, and also supplies protective agent P (see Figure 2) and release agent R (see Figure 2) to the device substrate W held by the substrate holding mechanism 102.

[0108] The liquid supply unit 103 has nozzles 103a, 103b, and 103c, an arm 103d, and a swivel / lift mechanism 103e. The arm 103d holds the nozzles 103a, 103b, and 103c. The swivel / lift mechanism 103e swivels and lifts the arm 103d.

[0109] The nozzle 103a is connected to an adhesive supply source 103g via a valve 103f, and dispenses the adhesive G supplied from the adhesive supply source 103g onto the support substrate S. The nozzle 103b is connected to a protective agent supply source 103i via a valve 103h, and dispenses the protective agent P supplied from the protective agent supply source 103i onto the device substrate W.

[0110] The nozzle 103c is connected to a remover supply source 103k via a valve 103j, and discharges the remover R supplied from the remover supply source 103k onto the device substrate W.

[0111] The collection cup 104 is disposed so as to surround the holder 102a, and collects the adhesive G, protective agent P, and remover R that are scattered from the support substrate S and device substrate W as the holder 102a rotates.

[0112] A drain port 104a is located at the bottom of the collection cup 104. The adhesive G, protective agent P, and release agent R collected by the collection cup 104 are discharged to the outside of the coating device 51 from this drain port 104a.

[0113] Further, an exhaust port 104b is formed at the bottom of the collection cup 104 to exhaust the downflow gas supplied from the FFU (not shown) to the outside of the coating device 51.

[0114] The peripheral cleaning unit 105 is used for the purpose of removing adhesive G adhering to the peripheral portion of the support substrate S. The peripheral cleaning unit 105 is provided below the support substrate S held by the substrate holding mechanism 102, for example, at the bottom of the collection cup 104.

[0115] The peripheral cleaning unit 105 is connected to a chemical supply source 105b via a valve 105a, and discharges a chemical supplied from the chemical supply source 105b, such as an organic solvent such as thinner, toward the periphery of the rear surface of the support substrate S.

[0116] In the coating device 51, the substrate holding mechanism 102 holds and rotates the support substrate S, and the peripheral cleaning unit 105 supplies the organic solvent to the outer periphery of the back surface of the rotating support substrate S. The organic solvent supplied to the outer periphery of the back surface of the support substrate S flows from the back surface side to the front surface side of the support substrate S, dissolving the adhesive G adhering to the peripheral portion of the support substrate S and removing it from the peripheral portion.

[0117] <Heat treatment equipment> Next, the configuration of a heat treatment apparatus 41 according to an embodiment will be described with reference to Fig. 8 and Fig. 9. Fig. 8 is a schematic cross-sectional view showing an example of the configuration of the heat treatment apparatus 41 according to an embodiment, and Fig. 9 is a schematic plan view showing an example of the configuration of the heat treatment apparatus 41 according to an embodiment.

[0118] 8, the heat treatment apparatus 41 has a chamber 210 whose interior can be closed. A loading / unloading port (not shown) for the device substrate W and the support substrate S is formed on the side of the chamber 210 facing the second transfer region 60 (see FIG. 1), and an opening / closing shutter (not shown) is provided at the loading / unloading port.

[0119] A gas supply port 211 is formed in the ceiling surface of the chamber 210 to supply an inert gas such as nitrogen gas into the chamber 210. A gas supply pipe 213 communicating with a gas supply source 212 is connected to the gas supply port 211. A supply device group 214 including a valve, a flow regulator, and the like for controlling the flow of the inert gas is provided in the gas supply pipe 213.

[0120] An intake port 215 for sucking the atmosphere inside the chamber 210 is formed on the bottom surface of the chamber 210. A negative pressure generator 216 for generating negative pressure is connected to the intake port 215. The negative pressure generator 216 is, for example, a vacuum pump.

[0121] A heating unit 220 and a temperature adjustment unit 221 are located inside the chamber 210. The heating unit 220 heats the device substrate W, the support substrate S, or the laminated substrate T. The temperature adjustment unit 221 adjusts the temperature of the device substrate W, the support substrate S, or the laminated substrate T. The heating unit 220 and the temperature adjustment unit 221 are located side by side along the Y-axis direction, for example.

[0122] The heating unit 220 has a heating plate 230, a holding member 231, and a support ring 232. The heating plate 230 has a thick, generally disk-like shape, and can heat the device substrate W, the support substrate S, or the laminated substrate T placed thereon.

[0123] The hot plate 230 also includes, for example, a built-in heater 233. The heating temperature of the hot plate 230 is controlled by, for example, the control unit 5 (see FIG. 1), and the device substrate W, the support substrate S, or the laminated substrate T placed on the hot plate 230 is heated to a given temperature.

[0124] The holding member 231 is annular, accommodates the hot plate 230, and holds the outer periphery of the hot plate 230. The support ring 232 is substantially cylindrical, and surrounds the outer periphery of the holding member 231.

[0125] A plurality of (for example, three) support pins 240 are positioned below the heat plate 230. The plurality of support pins 240 support and raise and lower the device substrate W, support substrate S, or laminated substrate T from below. The support pins 240 can be moved up and down by an elevation drive unit 241.

[0126] A plurality of (for example, three) through-holes 242 are formed near the center of the hot plate 230, penetrating the hot plate 230 in the thickness direction. The support pins 240 are inserted into the through-holes 242 and are capable of protruding from the upper surface of the hot plate 230.

[0127] The temperature adjustment unit 221 has a temperature adjustment plate 250. As shown in Fig. 9, the temperature adjustment plate 250 has a substantially rectangular flat plate shape, and the end face on the hot plate 230 side is curved in an arc shape. Two slits 251 are formed in the temperature adjustment plate 250 along the Y-axis direction.

[0128] The slits 251 are formed from the end surface of the temperature adjustment plate 250 on the heating plate 230 side to near the center of the temperature adjustment plate 250. The slits 251 can prevent the temperature adjustment plate 250 from interfering with the support pins 240 of the heating unit 220 and the support pins 260 of the temperature adjustment unit 221, which will be described later.

[0129] A temperature adjustment member (not shown), such as a Peltier element, is built into the temperature adjustment plate 250. The cooling temperature of the temperature adjustment plate 250 is controlled by the control unit 5, and the device substrate W, the support substrate S, or the laminated substrate T placed on the temperature adjustment plate 250 is cooled to a given temperature.

[0130] 8, the temperature adjustment plate 250 is supported by a support arm 252. A drive unit 253 is provided on the support arm 252. The drive unit 253 is attached to a rail 254 that extends in the Y-axis direction.

[0131] The rails 254 extend from the temperature adjustment unit 221 to the heating unit 220. The driving unit 253 enables the temperature adjustment plate 250 to move along the rails 254 between the heating unit 220 and the temperature adjustment unit 221.

[0132] A plurality of (for example, three) support pins 260 are positioned below the temperature adjustment plate 250. The plurality of support pins 260 support the device substrate W, the support substrate S, or the laminated substrate T from below and raise and lower them. The support pins 260 can be moved up and down by an elevation drive unit 261. The support pins 260 are inserted through the slits 251 and can protrude from the upper surface of the temperature adjustment plate 250.

[0133] In the heat treatment apparatus 41 configured as described above, when the device substrate W, support substrate S or laminated substrate T is transported into the chamber 210 by the second transport device 61 (see Figure 1) in the second transport region 60, the transported substrate is received by the support pins 260 that have been raised and waiting in advance.

[0134] Next, the heat treatment apparatus 41 lowers the support pins 260 and places the device substrate W, the support substrate S, or the laminated substrate T on the temperature adjustment plate 250.

[0135] Next, the heat treatment device 41 moves the temperature adjustment plate 250 along the rails 254 to above the heating plate 230 using the drive unit 253, and transfers the device substrate W, support substrate S, or laminated substrate T to the support pins 240 that have been raised and are waiting in advance.

[0136] Next, the heat treatment apparatus 41 lowers the support pins 240 to place the device substrate W, the support substrate S, or the overlapped substrate T on the heating plate 230. Then, the device substrate W, the support substrate S, or the overlapped substrate T on the heating plate 230 is heated to a given temperature.

[0137] Thereafter, the heat treatment apparatus 41 raises the support pins 240 and moves the temperature adjustment plate 250 above the heating plate 230. Then, the heat treatment apparatus 41 transfers the device substrate W, the support substrate S, or the overlapped substrate T from the support pins 240 to the temperature adjustment plate 250, and moves the temperature adjustment plate 250 toward the second transfer region 60. During this movement of the temperature adjustment plate 250, the device substrate W, the support substrate S, or the overlapped substrate T is adjusted to a given temperature.

[0138] <Joining equipment> Next, the configuration of the joining device 42 will be described with reference to Figures 10 and 11. Figures 10 and 11 are schematic cross-sectional views showing an example of the configuration of the joining device 42 according to the embodiment.

[0139] 10, the joining device 42 includes a first holding section 310 and a second holding section 320. The first holding section 310 is disposed above the second holding section 320 and faces the second holding section 320.

[0140] The first holding unit 310 and the second holding unit 320 are, for example, electrostatic chucks, and respectively hold the support substrate S and the device substrate W by electrostatic attraction. The first holding unit 310 holds the support substrate S from above, and the second holding unit 320 holds the device substrate W from below.

[0141] The support substrate S and the device substrate W are held by the first holding part 310 and the second holding part 320, respectively, with the bonding surface Sj (see FIG. 2) and the bonding surface Wj (see FIG. 2) facing each other.

[0142] In addition, the first holding unit 310 and the second holding unit 320 may have, in addition to electrostatic adsorption units that electrostatically adsorb the support substrate S and the device substrate W, respectively, vacuum adsorption units that vacuum adsorb the support substrate S and the device substrate W, respectively.

[0143] The bonding device 42 further includes a first heating mechanism 330, a second heating mechanism 340, and a pressure mechanism 350. The first heating mechanism 330 is built into the first holding unit 310, and heats the first holding unit 310, thereby heating the support substrate S held by the first holding unit 310 to a given temperature.

[0144] The second heating mechanism 340 is built into the second holding unit 320, and heats the second holding unit 320, thereby heating the device substrate W held by the second holding unit 320 to a given temperature.

[0145] The pressurizing mechanism 350 moves the first holding unit 310 vertically downward to bring the support substrate S into contact with the device substrate W and apply pressure. The pressurizing mechanism 350 has a base member 351, a pressure vessel 352, a gas supply pipe 353, and a gas supply source 354. The base member 351 is attached to the ceiling surface inside a first chamber unit 361, which will be described later.

[0146] The pressure vessel 352 is configured, for example, by a stainless steel bellows that is expandable and contractible in the vertical direction. The lower end of the pressure vessel 352 is fixed to the upper surface of the first holding part 310, and the upper end is fixed to the lower surface of the base member 351.

[0147] One end of the gas supply pipe 353 is connected to the pressure vessel 352 via the base member 351 and a first chamber portion 361 (described later), and the other end is connected to a gas supply source 354 .

[0148] When gas is supplied from a gas supply source 354 to the inside of the pressure vessel 352 via a gas supply pipe 353, the pressure vessel 352 is extended and the first holding part 310 is lowered.

[0149] As a result, the support substrate S is pressed in contact with the device substrate W. The pressure applied to the support substrate S and the device substrate W is adjusted by adjusting the pressure of the gas supplied to the pressure vessel 352.

[0150] The bonding device 42 also includes a chamber 360, a moving mechanism 370, a pressure reducing section 380, a first imaging section 391, and a second imaging section 392.

[0151] The chamber 360 is a processing vessel whose interior can be sealed, and includes a first chamber section 361 and a second chamber section 362. The first chamber section 361 is a cylindrical vessel with a closed bottom and an open bottom, and accommodates the first holding section 310, the pressure vessel 352, etc. The second chamber section 362 is a cylindrical vessel with a closed bottom and an open top, and accommodates the second holding section 320, etc.

[0152] The first chamber 361 is configured to be movable up and down in the vertical direction by a lifting mechanism (not shown) such as an air cylinder. The first chamber 361 is lowered by the lifting mechanism so that it abuts against the second chamber 362, thereby forming an enclosed space inside the chamber 360.

[0153] A seal member 363 for ensuring airtightness of the chamber 360 is provided on the contact surface of the first chamber portion 361 with the second chamber portion 362. As the seal member 363, for example, an O-ring is used.

[0154] The movement mechanism 370 is provided on the outer periphery of the first chamber section 361, and moves the first holding section 310 in the horizontal direction via the first chamber section 361. A plurality of (for example, five) movement mechanisms 370 are provided on the outer periphery of the first chamber section 361.

[0155] For example, four of the five movement mechanisms 370 are used to move the first holding unit 310 in the horizontal direction, and one of the five movement mechanisms 370 is used to rotate the first holding unit 310 around the vertical axis.

[0156] The movement mechanism 370 has a cam 371, a shaft 372, and a rotation drive unit 373. The cam 371 abuts against the outer periphery of the first chamber unit 361 to move the first holding unit 310. The shaft 372 connects the cam 371 and the rotation drive unit 373. The rotation drive unit 373 rotates the cam 371 via the shaft 372.

[0157] Cam 371 is provided eccentrically with respect to the central axis of shaft 372. In movement mechanism 370, cam 371 is rotated by rotation drive unit 373, thereby moving the central position of cam 371 relative to first holding unit 310. In this way, movement mechanism 370 can move first holding unit 310 in the horizontal direction.

[0158] Decompression unit 380 is provided, for example, below second chamber unit 362, and reduces the pressure inside chamber 360. Decompression unit 380 has an intake pipe 381 and an intake device 382. Intake pipe 381 is provided to draw in the atmosphere inside chamber 360. Intake device 382 is, for example, a vacuum pump, and is connected to intake pipe 381.

[0159] The first imaging unit 391 is located below the first holding unit 310 and captures an image of the surface of the support substrate S held by the first holding unit 310. The second imaging unit 392 is located above the second holding unit 320 and captures an image of the surface of the device substrate W held by the second holding unit 320.

[0160] The first imaging unit 391 and the second imaging unit 392 are configured to be movable in the horizontal direction by a movement mechanism (not shown). The first imaging unit 391 and the second imaging unit 392 enter the interior of the chamber 360 before the first chamber section 361 is lowered, and capture images of the support substrate S and the device substrate W, respectively.

[0161] The imaging data of first imaging section 391 and second imaging section 392 is transmitted to control section 5 (see FIG. 1). Note that, for example, wide-angle cameras are used as first imaging section 391 and second imaging section 392, respectively.

[0162] In the bonding apparatus 42 configured as above, first, the support substrate S is held by the first holding part 310, and the device substrate W is held by the second holding part 320.

[0163] Next, in the bonding apparatus 42, the first imaging unit 391 and the second imaging unit 392 shown in FIG. 10 move horizontally into the chamber 360 and capture images of the surface of the support substrate S and the surface of the device substrate W, respectively.

[0164] Thereafter, the horizontal position of the support substrate S is adjusted by the movement mechanism 370 so that the position of the reference point of the support substrate S imaged by the first imaging unit 391 coincides with the position of the reference point of the device substrate W imaged by the second imaging unit 392. In this way, the horizontal position of the support substrate S relative to the device substrate W is adjusted.

[0165] Next, after the first imaging unit 391 and the second imaging unit 392 leave the chamber 360, the first chamber unit 361 is lowered by a moving mechanism (not shown). Then, the first chamber unit 361 comes into contact with the second chamber unit 362, thereby forming an enclosed space inside the chamber 360.

[0166] Next, in the bonding apparatus 42, the atmosphere in the chamber 360 is sucked in by the pressure reducing section 380, thereby reducing the pressure inside the chamber 360.

[0167] Thereafter, in the bonding apparatus 42, the support substrate S and the device substrate W are heated to a given temperature (for example, 200 to 250° C.) by the first heating mechanism 330 of the first holding section 310 and the second heating mechanism 340 of the second holding section 320.

[0168] Next, in the bonding apparatus 42, a gas is supplied to the pressure vessel 352 to set the inside of the pressure vessel 352 to a given pressure. As a result, as shown in Fig. 11, the first holding unit 310 descends and the support substrate S and the device substrate W are pressurized at the given pressure. As a result, the support substrate S and the device substrate W are bonded together.

[0169] <Second conveying device> Next, the configuration of the second transfer device 61 will be described with reference to Figures 12 and 13. Figure 12 is a schematic side view showing an example of the configuration of the second transfer device 61 according to the embodiment.

[0170] 12, the second transfer device 61 according to the embodiment includes a plurality of forks 61a, a plurality of suction mechanisms 61b, and an arm 61c. The forks 61a hold the device substrate W, the support substrate S, or the laminated substrate T. The forks 61a have, for example, a bifurcated tip in a plan view.

[0171] A plurality of suction mechanisms 61b are provided on one fork 61a, and suction is applied to the device substrate W, the support substrate S, or the overlapping substrate T. The fork 61a suction-holds the device substrate W, the support substrate S, or the overlapping substrate T by operating the plurality of suction mechanisms 61b.

[0172] The arm 61c has a mechanism for moving the forks 61a. In the example of Fig. 12, for example, one arm 61c moves a plurality of (for example, two) forks 61a all at once.

[0173] The plurality of forks 61a includes a first fork 61a1 and a second fork 61a2. The first fork 61a1 has a plurality of suction mechanisms 61b on its upper surface, and holds the device substrate W or the laminated substrate T from below.

[0174] On the other hand, the second fork 61a2 has a plurality of suction mechanisms 61b on the lower surface thereof, and holds from above the support substrate S on which the adhesive G (see FIG. 2) is applied.

[0175] Thus, in the embodiment, the second transport device 61 has two types of forks, the first fork 61a1 and the second fork 61a2. This allows the device substrate W aligned by the alignment device 73 (see FIG. 4) to be transported directly to the bonding device 42 (see FIG. 3), and the support substrate S inverted and aligned by the inversion alignment device 72 (see FIG. 4) to be transported directly to the bonding device 42.

[0176] Therefore, according to the embodiment, it is possible to improve the efficiency of transporting the device substrate W and the support substrate S. In the present disclosure, the support substrate S may be held from below by the first fork 61a1.

[0177] Furthermore, the second transfer device 61 according to the embodiment is not limited to the example shown in Fig. 12. Fig. 13 is a schematic side view showing another example of the configuration of the second transfer device 61 according to the embodiment.

[0178] 13, a second transfer device 61 according to another example includes one fork 61a, multiple suction mechanisms 61b, and an arm 61c. In the example of FIG. 13, the multiple suction mechanisms 61b include multiple first suction mechanisms 61b1 and multiple second suction mechanisms 61b2.

[0179] The first suction mechanisms 61b1 are located on the upper surface of one fork 61a, and the second suction mechanisms 61b2 are located on the lower surface of the same fork 61a.

[0180] As a result, as shown in Figure 13, the second transport device 61 can use one fork 61a to hold the device substrate W or the laminated substrate T from below, and can also hold the support substrate S to which adhesive G (see Figure 2) has been applied from above.

[0181] Therefore, the device substrate W aligned by the alignment device 73 (see Figure 4) can be transported directly to the bonding device 42 (see Figure 3), and the support substrate S inverted and aligned by the inversion alignment device 72 (see Figure 4) can be transported directly to the bonding device 42.

[0182] 13, it is possible to improve the efficiency of transporting the device substrate W and the support substrate S. In the present disclosure, the support substrate S may be sucked and held from below by a plurality of first suction mechanisms 61b1.

[0183] <Operation of the joint system> Next, the operation of the above-described joint system 1 will be described with reference to Fig. 14. Fig. 14 is a flowchart showing the procedure of the process executed by the joint system 1 according to the embodiment.

[0184] First, the control unit 5 operates the first transport device 24 to remove the support substrate S from the cassette C1 and transport it to the ID reader 82 of the first inspection unit 32 located in the third processing block G3. Then, the control unit 5 operates the ID reader 82 to read the identification information of the support substrate S (step S101).

[0185] Next, the control unit 5 operates the first transfer device 24 to remove the support substrate S from the ID reading device 82 and transfer it to the delivery device 74 of the delivery unit 31 located in the third processing block G3. Then, the control unit 5 operates the second transfer device 61 to remove the support substrate S from the delivery device 74 and transfer it to the coating device 51 located in the second processing block G2.

[0186] Furthermore, the control unit 5 operates the applicator 51 to apply the adhesive G to the bonding surface Sj of the support substrate S (step S102).

[0187] Next, the control unit 5 operates the second transfer device 61 to remove the support substrate S coated with the adhesive G from the coating device 51 and transfer it to the heat treatment device 41 located in the first processing block G1. Then, the control unit 5 operates the heat treatment device 41 to heat the support substrate S to a given temperature (step S103).

[0188] Next, the control unit 5 operates the second transport device 61 to remove the heat-treated support substrate S from the heat treatment device 41 and transport it to the film thickness measuring device 85 of the second inspection unit 33 located in the first processing block G1. Then, the control unit 5 operates the film thickness measuring device 85 to measure the film thickness of the adhesive G applied to the support substrate S.

[0189] The present disclosure is not limited to measuring the film thickness of the adhesive G after the adhesive G is heat-treated, but the film thickness of the adhesive G may be measured before the adhesive G is heat-treated.

[0190] Next, the control unit 5 operates the second transfer device 61 to remove the support substrate S from the film thickness measurement device 85 and transfer it to the coating device 51 located in the second processing block G2. Then, the control unit 5 operates the coating device 51 to remove the adhesive G from the peripheral edge portion of the support substrate S (step S104).

[0191] Next, the control unit 5 operates the second transfer device 61 to remove the support substrate S from the coating device 51, from which the adhesive G has been removed from the peripheral edge, and transfer it to the heat treatment device 41 located in the first processing block G1. Then, the control unit 5 operates the heat treatment device 41 to heat the support substrate S to a given temperature (step S105).

[0192] Next, the control unit 5 operates the second transport device 61 to remove the support substrate S from the heat treatment device 41 and transport it to the periphery inspection device 86 of the second inspection unit 33 located in the first processing block G1. Then, the control unit 5 operates the periphery inspection device 86 to measure the state of the adhesive G removed from the periphery of the support substrate S.

[0193] Note that the present disclosure is not limited to measuring the state of adhesive G removed from the peripheral portion of the support substrate S after the support substrate S has been heat-treated, but may also measure the state of adhesive G removed from the peripheral portion of the support substrate S before the support substrate S is heat-treated.

[0194] Next, the control unit 5 operates the second transport device 61 to remove the support substrate S from the periphery inspection device 86 and transport it to the inversion alignment device 72 of the delivery unit 31 located in the third processing block G3.

[0195] Then, the control unit 5 operates the inversion alignment device 72 to invert the support substrate S (step S106). Furthermore, the control unit 5 operates the inversion alignment device 72 to adjust the horizontal position of the support substrate S (step S107).

[0196] Next, the control unit 5 operates the second transport device 61 to remove the support substrate S, which has been inverted and whose horizontal position has been adjusted, from the inversion and alignment device 72 and transport it to the bonding device 42 located in the first processing block G1. Then, the control unit 5 operates the bonding device 42 to hold the support substrate S with the first holding unit 310 of the bonding device 42 (step S108).

[0197] In parallel with the processes of steps S101 to S108 described above, the control unit 5 executes the processes of steps S109 to S115 described below.

[0198] First, the control unit 5 operates the first transport device 24 to remove the device substrate W from the cassette C2 and transport it to the ID reader 82 of the first inspection unit 32 located in the third processing block G3. Then, the control unit 5 operates the ID reader 82 to read the identification information of the device substrate W (step S109).

[0199] Next, the control unit 5 operates the first transfer device 24 to remove the device substrate W from the ID reading device 82 and transfer it to the delivery device 74 of the delivery section 31 located in the third processing block G3. Then, the control unit 5 operates the second transfer device 61 to remove the device substrate W from the delivery device 74 and transfer it to the coating device 51 located in the second processing block G2.

[0200] Furthermore, the control unit 5 operates the coating device 51 to coat the protective agent P on the bonding surface Wj of the device substrate W (step S110).

[0201] Next, the control unit 5 operates the second transfer unit 61 to remove the device substrate W coated with the protective agent P from the coating unit 51 and transfer it to the heat treatment unit 41 located in the first processing block G1. Then, the control unit 5 operates the heat treatment unit 41 to heat the device substrate W to a given temperature (step S111).

[0202] Next, the control unit 5 operates the second transfer unit 61 to remove the heat-treated device substrate W from the heat treatment unit 41 and transfer it to the coating unit 51 located in the second processing block G2. Then, the control unit 5 operates the coating unit 51 to apply the remover R to the surface of the protective agent P applied in the processing of step S110 (step S112).

[0203] Next, the control unit 5 operates the second transfer unit 61 to remove the device substrate W coated with the release agent R from the coating unit 51 and transfer it to the heat treatment unit 41 located in the first processing block G1. Then, the control unit 5 operates the heat treatment unit 41 to heat the device substrate W to a given temperature (step S113).

[0204] Next, the control unit 5 operates the second transfer device 61 to remove the device substrate W from the heat treatment device 41 and transfer it to the alignment device 73 of the delivery unit 31 located in the third processing block G3. Then, the control unit 5 operates the alignment device 73 to adjust the horizontal position of the device substrate W (step S114).

[0205] Next, the control unit 5 operates the second transport device 61 to remove the device substrate W whose horizontal position has been adjusted from the alignment device 73 and transport it to the bonding device 42 located in the first processing block G1. Then, the control unit 5 operates the bonding device 42 to hold the device substrate W by the second holding unit 320 of the bonding device 42 (step S115).

[0206] Next, the control unit 5 operates the bonding device 42 to bond the support substrate S held by the first holding unit 310 and the device substrate W held by the second holding unit 320 to form a laminated substrate T (step S116).

[0207] Next, the control unit 5 operates the second transfer device 61 to remove the laminated substrate T formed in the process of step S116 from the bonding device 42 and transfer it to the cooling device 75 of the delivery unit 31 located in the third process block G3. Then, the control unit 5 cools the laminated substrate T to a given temperature in the cooling device 75 (step S117).

[0208] Next, the control unit 5 operates the second transfer device 61 to remove the cooled laminated substrate T from the cooling device 75 and transfer it to the heat treatment device 41 located in the first processing block G1. Then, the control unit 5 operates the heat treatment device 41 to heat the laminated substrate T to a given temperature (step S118).

[0209] Next, the control unit 5 operates the second transfer device 61 to remove the laminated substrate T from the heat treatment device 41 and transfer it to the delivery device 74 of the delivery unit 31 located in the third processing block G3. Then, the control unit 5 operates the first transfer device 24 to remove the laminated substrate T from the delivery device 74 and transfer it to the thickness measurement device 81 of the first inspection unit 32 located in the third processing block G3.

[0210] Furthermore, the control unit 5 operates the thickness measuring device 81 to measure the variation in the thickness of the adhesive G on the laminated substrate T (step S119).

[0211] Next, the control unit 5 operates the first transport device 24 to remove the laminated substrate T from the thickness measuring device 81 and transport it to the periphery measuring device 84 of the first inspection unit 32. Then, the control unit 5 operates the periphery measuring device 84 to measure the periphery of the laminated substrate T and observe the bonding state of the laminated substrate T.

[0212] Finally, the control unit 5 operates the first transfer device 24 to remove the laminated substrate T from the periphery measuring device 84 and store it in the cassette C3, thereby completing the series of processes.

[0213] The bonding system 1 according to the embodiment includes a processing station 3 and a load / unload station 2. The processing station 3 performs a given process on a first substrate (support substrate S) and a second substrate (device substrate W). The load / unload station 2 loads the first substrate (support substrate S), the second substrate (device substrate W), and a laminated substrate T formed by bonding the first substrate (support substrate S) and the second substrate (device substrate W) into and out of the processing station 3. The processing station 3 also includes a transfer device (second transfer device 61), a delivery unit 31, a coating device 51, a bonding device 42, and a heat treatment device 41. The transfer device (second transfer device 61) transfers the first substrate (support substrate S), the second substrate (device substrate W), and the laminated substrate T. The delivery section 31 delivers the first substrate (support substrate S), the second substrate (device substrate W), and the overlapped substrate T between the carry-in / out station 2 and the transport device (second transport device 61). The coating device 51 applies adhesive G to the first substrate (support substrate S). The bonding device 42 bonds the first substrate (support substrate S) to which the adhesive G has been applied and the second substrate (device substrate W) to form the overlapped substrate T. The heat treatment device 41 heat-treats the first substrate (support substrate S), the second substrate (device substrate W), and the overlapped substrate T. The heat treatment device 41 and the bonding device 42 are arranged in a stacked manner. This allows the footprint of the bonding system 1 to be reduced.

[0214] Moreover, in the bonding system 1 according to the embodiment, the heat treatment device 41 is placed above the bonding device 42. This allows the bonding process in the bonding device 42 to be performed with high precision.

[0215] In the bonding system 1 according to the embodiment, the heat treatment device 41 and the bonding device 42 are located on the first surface 60a side of the transfer area (second transfer area 60) where the transfer device (second transfer device 61) is located. The application device 51 is located on the second surface 60b side of the transfer area (second transfer device 61), opposite the first surface 60a. This allows the adhesive G, protective agent P, or release agent R to be applied with high precision.

[0216] Furthermore, in the bonding system 1 according to the embodiment, the delivery unit 31 has an inversion and alignment device 72 that inverts the first substrate (support substrate S) upside down and aligns the first substrate (support substrate S). This allows the footprint of the bonding system 1 to be further reduced.

[0217] Furthermore, in the bonding system 1 according to the embodiment, the delivery section 31 has an alignment device 73 that aligns the second substrate (device substrate W). This allows the footprint of the bonding system 1 to be further reduced.

[0218] Moreover, in the bonding system 1 according to the embodiment, the transfer section 31 has a cooling device 75 that cools the laminated substrate T. This allows the footprint of the bonding system 1 to be further reduced.

[0219] Furthermore, in the bonding system 1 according to the embodiment, the loading / unloading station 2 has another transfer device (first transfer device 24) that transfers the first substrate (support substrate S), the second substrate (device substrate W), and the overlapped substrate T between the multiple cassettes C and the transfer unit 31. Furthermore, the processing station 3 has an inspection unit (first inspection unit 32) that inspects at least one of the first substrate (support substrate S), the second substrate (device substrate W), and the overlapped substrate T. The inspection unit (first inspection unit 32) cannot be accessed from the transfer device (second transfer device 61), and can only be accessed from the other transfer device (first transfer device 24). This allows the footprint of the bonding system 1 to be further reduced.

[0220] Furthermore, in the bonding system 1 according to the embodiment, the inspection unit (first inspection unit 32) has a thickness measuring device 81 that measures variations in the thickness of the adhesive G on the laminated substrate T. This allows the footprint of the bonding system 1 to be further reduced.

[0221] Furthermore, in the bonding system 1 according to the embodiment, the inspection unit (first inspection unit 32) has an ID reader 82 that reads the identification information attached to the first substrate (support substrate S) and the second substrate (device substrate W). This allows the footprint of the bonding system 1 to be further reduced.

[0222] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments, and various modifications are possible without departing from the spirit of the present disclosure. For example, in the embodiment, an example is shown in which the bonding process is performed in a state in which the support substrate S is held by the first holding unit 310 and the device substrate W is held by the second holding unit 320 in the bonding apparatus 42, but the present disclosure is not limited to such an example.

[0223] For example, in the present disclosure, in the bonding apparatus 42, the bonding process may be performed in a state in which the device substrate W is held by the first holding part 310 and the support substrate S is held by the second holding part 320. This also allows the bonding process of the support substrate S and the device substrate W to be performed satisfactorily.

[0224] In addition, in the embodiment, an example is shown in which the device substrate W is coated with a protective agent P and a release agent R and then bonded to the support substrate S, but the present disclosure is not limited to such an example, and for example, the protective agent P may be omitted.

[0225] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0226] 1. Joint System 2 Loading / unloading station 3 Processing Stations 24 First conveying device (an example of another conveying device) 31 Delivery Department 32 First Inspection Department (Example of an inspection department) 41 Heat treatment equipment 42 Joining equipment 51 Coating equipment 60 Second conveying area (an example of a conveying area) 60a Page 1 60b 2nd side 61 Second conveying device (an example of a conveying device) 72 Reverse alignment device 73 Alignment device 75 Cooling device 81 Thickness measuring device 82 ID reader C Cassette G. Adhesive S Support substrate (an example of the first substrate) T Polymer Substrate W Device substrate (an example of a second substrate)

Claims

1. a processing station for performing a given process on the first substrate and the second substrate; a carry-in / out station that carries the first substrate, the second substrate, and a laminated substrate formed by bonding the first substrate and the second substrate into and out of the processing station; Equipped with The processing station comprises: a transport device that transports the first substrate, the second substrate, and the laminated substrate; a transfer unit that transfers the first substrate, the second substrate, and the laminated substrate between the carry-in / out station and the transport device; an application device that applies adhesive to the first substrate; a bonding device that bonds the first substrate coated with the adhesive to the second substrate to form the laminated substrate; a heat treatment device that heat-treats the first substrate, the second substrate, and the laminated substrate; and The heat treatment device and the bonding device are arranged in a stacked manner. Joining system.

2. The heat treatment device is disposed above the bonding device. The joint system of claim 1 .

3. the heat treatment device and the bonding device are located on a first surface side of a transfer area in which the transfer device is located, the coating device is located on a second surface side opposite to the first surface in the transport area. The joint system according to claim 1 or 2.

4. The delivery section has an inversion alignment device that inverts the first substrate upside down and aligns the first substrate. The joint system according to claim 1 or 2.

5. The delivery section has an alignment device that aligns the second substrate. The joint system according to claim 1 or 2.

6. The transfer unit has a cooling device for cooling the laminated substrate. The joint system according to claim 1 or 2.

7. the carry-in / out station includes another transport device that transports the first substrate, the second substrate, and the laminated substrate between a plurality of cassettes and the transfer section; the processing station has an inspection unit that inspects at least one of the first substrate, the second substrate, and the laminated substrate; The inspection unit cannot be accessed from the transport device, but can be accessed only from the other transport device. The joint system according to claim 1 or 2.

8. The inspection unit has a thickness measuring device that measures the variation in the thickness of the adhesive on the laminated substrate. The joint system of claim 7 .

9. The inspection unit has an ID reader that reads identification information attached to the first substrate and the second substrate. The joint system of claim 7 .

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