Air transport device

The all-silicon air transfer device with piezoelectric-driven flaps generates unidirectional ultrasonic air pulses for efficient heat dissipation, addressing integration challenges in compact devices and enhancing thermal management in advanced packaging.

JP2026047346APending Publication Date: 2026-03-13XMEMS LABS INC
View PDF 7 Cites 0 Cited by

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-09-03
Publication Date
2026-03-13

AI Technical Summary

Technical Problem

Conventional thermal management solutions, such as fans and heat sinks, are bulky and difficult to integrate into compact electronic devices like smartphones and tablets, necessitating a more compact, efficient, and seamlessly integrated cooling solution.

Method used

An all-silicon air transfer device using piezoelectric-driven film structures with flaps that operate in both in-phase and differential modes, generating unidirectional ultrasonic air pulses for efficient heat dissipation, manufactured via MEMS or semiconductor processes.

Benefits of technology

The device provides high-integration, flexible thermal management suitable for advanced packaging, enabling reliable operation of next-generation electronic devices by overcoming space constraints and ensuring efficient heat dissipation.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 2026047346000001_ABST
    Figure 2026047346000001_ABST
Patent Text Reader

Abstract

This invention provides an air transfer device that improves upon the shortcomings of conventional technology. [Solution] The air transport device includes a film structure, a first actuator, and a second actuator. The film structure includes a flap pair, the flap pair including a first flap and a second flap facing each other. The first actuator is positioned on the first flap, and the second actuator is positioned on the second flap. The first actuator includes a first electrode and a second electrode, and the second actuator includes a third electrode and a fourth electrode. The first electrode receives a first demodulation signal, and the third electrode receives a second demodulation signal, thereby causing the flap pair to operate in differential mode. The second and fourth electrodes receive a modulation signal, thereby causing the flap pair to operate in in-phase mode.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] 1. Field of the Invention

[0002] The present invention relates to an air moving device, and more specifically, to an air moving device capable of generating an air flow in a direction suitable for an appropriate application.

Background Art

[0003] 2. Description of the Related Art

[0004] Unless otherwise specified in this specification, the methods described in this paragraph are not prior art to the claims of this application and are not admitted as prior art by including them in this paragraph.

[0005] In modern electronic devices, thermal management has become an important issue in the trend of miniaturization of devices and improvement of component density. In a compact circuit board, electronic components are close to each other and there are multiple heat sources, so the air flow and heat dissipation efficiency may be significantly reduced. Furthermore, since the space in front of these boards is limited, the implementation of conventional cooling solutions has become increasingly difficult.

[0006] Conventional thermal solutions often consist of individual fans, heat sinks, or other bulky mechanical devices, and it is difficult to integrate them into today's very compact systems, especially mobile devices such as smartphones and tablets. Therefore, in order to meet the demand for modern electronic products, a more compact, highly efficient, and seamlessly integrated cooling solution is strongly required. Therefore, it is necessary to improve the prior art.

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Patent Document 2

[0008] Therefore, the main objective of the present invention is to provide an air transfer device that improves upon the shortcomings of the prior art. [Means for solving the problem]

[0009] One embodiment of the present invention provides an air transport device including a film structure, a first actuator, and a second actuator. The film structure includes a flap pair, the flap pair including a first flap and a second flap facing each other. The first actuator is positioned on the first flap, and the second actuator is positioned on the second flap. The first actuator includes a first electrode and a second electrode, and the second actuator includes a third electrode and a fourth electrode. The first electrode receives a first demodulation signal, and the third electrode receives a second demodulation signal, thereby causing the flap pair to operate in differential mode. The second and fourth electrodes receive a modulation signal, thereby causing the flap pair to operate in in-phase mode.

[0010] These and other objectives of the present invention will become apparent to those skilled in the art after reading the following detailed description of preferred embodiments shown in various drawings. [Brief explanation of the drawing]

[0011] [Figure 1] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 2] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 3] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 4] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 5] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 6] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 7] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 8] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 9] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 10] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 11] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 12] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 13] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 14] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 15] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 16] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 17] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 18] It is a schematic diagram of an air moving device according to an embodiment of the present invention. [Figure 19]This is a schematic diagram of an air transfer device according to one embodiment of the present invention. [Figure 20] This is a schematic diagram of a composite (multifunctional) device according to one embodiment of the present invention. [Figure 21] This is a schematic diagram of a composite (multifunctional) device according to one embodiment of the present invention. [Figure 22] This is a schematic diagram of an air transfer device according to one embodiment of the present invention. [Figure 23] This is a schematic diagram of an air transfer device according to one embodiment of the present invention. [Figure 24] This is a schematic diagram of an air transfer device according to one embodiment of the present invention. [Figure 25] This is a schematic diagram of an air transfer device according to one embodiment of the present invention. [Figure 26] This is a schematic diagram of a mobile device according to one embodiment of the present invention. [Figure 27] This is a schematic diagram of an air transfer device according to one embodiment of the present invention. [Modes for carrying out the invention]

[0012] This invention addresses these challenges by providing a compact, all-silicon cooling device. This device can function as a standalone chiplet or be integrated into a sophisticated, packaged system-in-package (SiP) solution. Manufactured using micro-electromechanical systems (MEMS) or standard semiconductor manufacturing processes, the core component of this product is a piezoelectric-driven film structure. This structure includes a pair of opposing flaps that simultaneously perform both in-phase and differential mode operations. In-phase operation is driven by a modulated signal, while differential mode operation is driven by two demodulated signals. This combination of operations generates a constant, unidirectional airflow in the form of ultrasonic air pulses, effectively dissipating heat.

[0013] The contents of U.S. Patent No. 11,943,585, No. 12,356,141, and U.S. Patent Applications No. 19 / 007,580, No. 19 / 071,774 are incorporated herein by reference.

[0014] The technical features described in the embodiments of the present invention can be mixed or combined in various ways, as long as they do not contradict each other.

[0015] U.S. Patent No. 11,943,585, No. 12,356,141, and U.S. Patent Application No. 19 / 007,580 disclose air transport devices or air pulse generators for air transport applications.

[0016] Figure 1 is a schematic diagram of an air transfer device 10 according to one embodiment of the present invention. The air transfer device 10 is a semiconductor device that can be manufactured by MEMS (Micro-Electro-Mechanical Systems) or a semiconductor manufacturing process. The air transfer device 10 includes a film structure 12 that can be made from a specific semiconductor / wafer material such as silicon. Actuators may be formed on the film structure 12.

[0017] The film structure 12 includes a flap pair 122, which includes a first flap 101 and a second flap 102 facing each other. The flaps 101 and 102 may be made of silicon. Actuators 101A and 102A may be formed on the flaps 101 and 102. The actuators 101A / 102A include a piezoelectric layer containing a piezoelectric material (e.g., lead zirconate titanate (PZT)) sandwiched between an upper electrode and a lower electrode. The upper and lower electrodes receive a demodulated signal SV and a modulated signal SM.

[0018] In one embodiment, the upper electrode of actuator 101A receives a first demodulation signal SV1, the upper electrode of actuator 102A receives a second demodulation signal SV2, and the lower electrodes of actuators 101A and 102A receive a modulation signal SM. Therefore, the flap pair 122 can simultaneously perform in-phase mode motion (due to the modulation signal SM) and differential mode motion (due to the demodulation signals SV1 and SV2). Through in-phase and differential mode motion, the air transport device 10 generates multiple air pulses at an ultrasonic pulse rate. During a specific period (e.g., 0.1 seconds or more), the air pulses are unipolar, i.e., they generate airflow in only one direction. Therefore, the air transport device 10 can generate a constant / consistent airflow in one direction over a specific period. However, the direction of the airflow generated by the air transport device 10 is reversible. By appropriately adjusting the parameters of the demodulation signals SV1, SV2 and the modulation signal SM, the direction and intensity of the airflow generated by the air transport device 10 can be adjusted.

[0019] The differential mode operation of the flap pair 122 forms a virtual valve or opening 112 with an aperture ratio corresponding to the ultrasonic pulse rate.

[0020] The wiring to the upper and lower electrodes is not limited to a specific method, and the wiring methods shown in Figure 1 (specifically, part 1(a)) and the following figures are for illustrative purposes only. In part 1(a), the left side (flap 101) of part 1(a) shows the wiring method to the upper electrode, and the right side (flap 102) of part 1(a) shows the wiring method to the lower electrode. A person skilled in the art can obtain wiring methods for both the upper and lower electrodes by combining the concepts provided by the left and right sides of part 1(a).

[0021] For details of the operation of the air transfer device 10, refer to U.S. Patent No. 11,943,585, No. 12,356,141, and U.S. Patent Application No. 19 / 007,580, and for details of the manufacture of the air transfer device 10, refer to U.S. Patent Application No. 19 / 071,774; however, for the sake of brevity, these details are omitted herein.

[0022] Furthermore, the structure of the air transfer device 10 functions as a basic component / unit of the air transfer device of the present invention and appears repeatedly in the following embodiments.

[0023] Figure 2 is a schematic diagram of air transfer devices 20a and 20b according to one embodiment of the present invention. The air transfer devices 20a / 20b include an air transfer device 10. In addition to the air transfer device 10, the air transfer devices 20a / 20b include a cover structure 22a / 22b. The cover structure 22a / 22b may be made from a wafer / semiconductor material such as silicon. In one embodiment, both the film structure and the cover structure may be made from the same wafer / semiconductor material (e.g., silicon), thereby simplifying the complexity of manufacturing.

[0024] The cover structure 22a may be a side-injection type lid that allows airflow (outward / inward) to flow through the side of the cover structure 22a. The cover structure 22b may be a top-injection type lid that allows airflow (outward / inward) to flow through the top of the cover structure 22b.

[0025] Furthermore, the air transfer devices 20a / 20b are formed on the bases 24a / 24b, and the bases 24a / 24b may also be made from a wafer / semiconductor material such as silicon. In one embodiment, the base, film structure, and cover structure (of the air transfer device) may all be made from the same wafer / semiconductor material (e.g., silicon), thereby simplifying the complexity of manufacturing.

[0026] In one embodiment, air passages 26a / 26b and rear cavities 28a / 28b are formed within the base 24a / 24b, allowing airflow from the surrounding environment to flow from the air passages 26a / 26b to the rear cavities 28a / 28b.

[0027] Figure 3 is a schematic diagram of an air transfer device 30 according to one embodiment of the present invention. The air transfer device 30 is similar to the air transfer device 20a. Unlike 20a, through-silicon vias (TSVs) 32 are formed inside the air transfer device 30. The TSVs 32 can be configured to provide electrical connections to pads 36 formed on a printed circuit board (PCB) 34.

[0028] Figure 4 is a schematic diagram of an air transfer device 40 according to one embodiment of the present invention. The air transfer device 40 is similar to the air transfer device 30. The airflow generated by the air transfer device 30 is lateral, while the airflow generated by the air transfer device 40 is vertical. Furthermore, the air transfer device 40 includes a pad 42 located on the top of the cover structure or on the bottom of the base for interfacing with other chips in the chip stack.

[0029] Figure 5 is a schematic diagram of an air transfer device 50 according to one embodiment of the present invention. The air transfer device 50 is similar to the air transfer devices 30 and 40. The air transfer device 50 includes a side-jet type cover structure 52 and pads 54 disposed on the cover structure 52.

[0030] Figure 6 is a schematic diagram of an air transfer device 60 according to one embodiment of the present invention. The air transfer device 60 is similar to the air transfer device 50. Unlike the 50, the air transfer device 60 further includes a temperature sensor (e.g., a thermistor) 62. The temperature sensor 62 can be placed in a suitable location within the base or film / cover structure of the air transfer device 60. The temperature sensor 62 is connected to a controller (not shown) which can adjust the intensity of the airflow according to the temperature result sensed by the temperature sensor 62.

[0031] Figure 7 is a schematic diagram of an air transfer device 70 according to one embodiment of the present invention. The air transfer device 70 is similar to the air transfer device 20a. Unlike 20a, the air transfer device 70 includes a thermal interface material (TIM) 72 in its cover structure. The air transfer device 70 can come into contact with other high-temperature chips (heating devices) via the TIM 72 and dissipate heat from the high-temperature chips (heating devices). Also, as shown in Figure 7, the air transfer device 70 is wire-bonded to the PCB 74.

[0032] Figure 8 is a schematic diagram of an air transfer device 80 according to one embodiment of the present invention. The air transfer device 80 is similar to the air transfer device 70. Unlike the 70, the air transfer device 80 can be placed on a flexible PCB (FPCB) 82, improving the assembly flexibility of the air transfer device.

[0033] For example, Figure 9 shows an application example of the air transfer device 80 according to one embodiment of the present invention. The air transfer device 80 is inverted and placed on a high-temperature chip (heating device) 94. The high-temperature chip (heating device) 94 may be a processor such as a CPU (Central Processing Unit) or GPU (Graphics Processing Unit). The heat generated by the heating device 94 can be dissipated by the airflow generated by the air transfer device 80. Electrical signals from the PCB 96 can be sent to the air transfer device 80 via the FPCB 92.

[0034] Figure 10 shows another application example of the air transport device 80 according to one embodiment of the present invention. Unlike in Figure 9, in Figure 10, the drive circuit A0 is connected to the FPCB and supplies an electrical signal to the air transport device 80.

[0035] Figure 11 is a schematic diagram of an air transfer device B0 according to one embodiment of the present invention. The air transfer device B0 includes a pad B2 for providing thermal and / or electrical contact with other chips (not shown).

[0036] Figure 12 is a schematic diagram of an air transport device C0 according to one embodiment of the present invention. Air transport device C0 is similar to air transport device B0. Air transport device C0 is an upper injection type, while air transport device B0 is a side injection type.

[0037] Figures 13 to 15 show examples of applications of the air transfer device of the present invention. In Figures 13 to 15, the air transfer device of the present invention can be connected to an integrated circuit (IC) chip D1 via a connector D2. The connector D2 may be a (thermally and / or electrically) conductive ball, such as a solder ball. In Figures 13 and 15, the air transfer device faces the back surface of the IC chip D1, while in Figure 14, the air transfer device faces the front surface of the IC chip D1.

[0038] Figure 16 is a schematic diagram of an air transfer device E0 according to one embodiment of the present invention. The air transfer device E0 includes a side-jet type cover structure E2 and a TIM E4 positioned within the cover structure E2. Beneath the cover structure E2, the air transfer device 10 is wire-bonded to the PCB E6.

[0039] Figure 17 is a schematic diagram of an air transfer device F0 according to one embodiment of the present invention. The air transfer device F0 is similar to the air transfer device E0. Unlike E0, the air transfer device F0 includes a pad F4 located on top of the cover structure F2 instead of a TIM.

[0040] Figures 18 and 19 are similar to Figures 14 and 15, except that different shapes / types of cover structures are used in Figures 18 and 19.

[0041] Figure 20 is a schematic diagram of a composite (multifunctional) device G0 according to one embodiment of the present invention. The composite (multifunctional) device G0 includes a cover structure G2 made of a wafer / semiconductor material, such as silicon. Since the cover structure G2 is made of a wafer / semiconductor material, an IC chip G4 is formed on the cover structure G2, providing multiple functions of a chiplet / tile associated with the composite (multifunctional) device G0. For example, it can generate an airflow to dissipate heat generated from the IC chip G4 formed on the cover structure G2. The composite (multifunctional) device G0 can also be considered as an air transport device.

[0042] Figure 21 is a schematic diagram of a composite (multifunctional) device H0 according to one embodiment of the present invention. The composite (multifunctional) device H0 includes an air transfer device 10, an IC chip H2, and a metal lid H4. The air transfer device 10 covers the IC chip H2 (the IC chip H2 can be considered to be located in the rear cavity of the air transfer device 10 or in a cavity formed in the base of the air transfer device 10) and can generate an airflow to dissipate the heat generated from the IC chip H2. The composite (multifunctional) device H0 can also be considered as an air transfer device.

[0043] Figure 22 is a schematic diagram of air transfer devices I0a and I0b according to one embodiment of the present invention. Air transfer devices I0a / I0b include an air transfer device 10 which is wire-bonded to a printed circuit board (PCB). Air transfer devices I0a / I0b include a cover structure (e.g., a (metal) lid) I2a / I2b which can be sprayed from the top / side.

[0044] Furthermore, in the embodiment shown in Figure 22, the air transfer device 10a may include a temperature sensor I24 positioned appropriately within the air transfer device. A controller connected to the temperature sensor I24 can control the intensity of the airflow generated by the air transfer device.

[0045] Figures 23 and 24 show examples of applications of the same air transfer device I0b as in Figures 9 and 10.

[0046] Figure 25 is a schematic diagram of an air transfer device K0 according to one embodiment of the present invention. The air transfer device K0 includes an air transfer device 10 and a cover structure K2. The air transfer device 10 is attached to a PCB K4. The cover structure K2 may be made of wafer / semiconductor material. The cover structure K2 may be a sawed / diced wafer. Furthermore, the cover structure K2 may be a sawed / diced wafer having a back trench. The back trench of the cover structure K2 and the space above the film structure of the air transfer device 10 form a front chamber K6 of the air transfer device K0 (between the film structure and the cover structure). IC chips or pads may be formed on the wafer (cover structure) K2.

[0047] Figure 26 shows a mobile device L0 according to one embodiment of the present invention. Part (a) of Figure 26 shows a top view of the mobile device L0, and part (b) of Figure 26 shows a cross-sectional view of the mobile device L0 along the line A-A'. The mobile device L0 may be a mobile electronic device such as a mobile phone or a mobile tablet computer. The mobile device L0 includes a high-temperature chip L4 which may be a heat-generating device such as a processor. In order to prevent throttling of the high-temperature chip (processor) L4, it is necessary to dissipate the heat generated by the high-temperature chip (processor) L4 as efficiently as possible. To dissipate the heat generated from the high-temperature chip (processor) L4, a heat spreader (e.g., a steam chamber) L5 is included in the mobile device L0, and the heat is diffused throughout the heat spreader L5.

[0048] Furthermore, the mobile device L0 may include a side-jet type air transfer device L2 that generates an airflow to dissipate the heat carried to the heat spreader L5. In one embodiment, the air transfer device L2 may be positioned at the edge of the heat spreader L5 or the mobile device L0. The airflow may be generated toward a port L7 formed within the housing L3 at the edge of the mobile device L0. Glass L1 may be included to protect the screen of the mobile device L0.

[0049] In the embodiment shown in Figure 26, the air transfer device L2 is similar to the air transfer device 10b (shown in Figure 22) and may be attached to the FPCB L6, but is not limited thereto.

[0050] Figure 27 is a schematic diagram of an air transfer device M0 according to one embodiment of the present invention. The air transfer device M0 includes an air transfer device 10 placed on a base or substrate (e.g., PCB) M2, the base / substrate M2 having a channel formed therein. This means that a channel M4 is formed within the base / substrate M2 and airflow flows through the channel M4. When the air transfer device M0 is assembled or integrated (as shown in part (b) of Figure 27), the airflow flows inward or outward relative to the figure. Note that in part (b) of Figure 27, the airflow is an upper intake (i.e., the air transfer device M0 includes an upper intake cover structure), but is not limited thereto. The airflow may also be a side intake (i.e., the air transfer device includes a side intake cover structure), which is also within the scope of the present invention.

[0051] The main advantages of this all-silicon design are its high integration and flexibility. The entire device (including the base, actuator, and lid) can be fabricated from the same semiconductor material, such as silicon, simplifying the manufacturing process. The device can be configured with side-injection or top-injection airflow and allows for high-precision thermal control through the integration of temperature sensors. It can be directly mounted to printed circuit boards (PCBs) or flexible printed circuit boards (FPCBs) and can even be stacked with other chips using through-silicon vias (TSVs) or conductive pads. These features make it an ideal solution for addressing critical thermal challenges in advanced packaging technologies.

[0052] The proposed all-silicon cooling system represents a subtle yet significant advance in thermal management. By manufacturing the entire system from silicon, this technology seamlessly integrates with the latest semiconductor manufacturing processes and is ideal for advanced packaging and chiplet designs. The use of channeled PCBs to facilitate airflow overcomes space constraints and presents a novel approach to ensure efficient heat dissipation in compact assemblies where conventional airflow is limited. This invention will be a crucial component in enabling the reliable operation of next-generation high-performance electronic devices.

[0053] Those skilled in the art will readily understand that numerous modifications and changes can be made to the apparatus and method while maintaining the teachings of the present invention. Accordingly, the above disclosure should be construed as being limited only by the appended claims.

Claims

1. An air transport device, said air transport device, A film structure including a pair of flaps, wherein the pair of flaps includes a first flap and a second flap facing each other, A first actuator positioned on the first flap, The system includes a second actuator positioned on the second flap, The first actuator includes a first electrode and a second electrode, and the second actuator includes a third electrode and a fourth electrode. The first electrode receives the first demodulation signal, and the third electrode receives the second demodulation signal, thereby causing the flap pair to perform differential mode operation. The second electrode and the fourth electrode receive a modulated signal, thereby causing the flap pair to operate in in-phase mode. Air transport device.

2. The air transport device according to claim 1, wherein the air transport device generates a plurality of air pulses at an ultrasonic pulse rate.

3. The air transfer device according to claim 2, wherein the differential mode operation of the flap pair forms a virtual valve or opening at an opening rate corresponding to the ultrasonic pulse rate.

4. The air transport device according to claim 2, wherein the plurality of air pulses are unipolar during the time period.

5. Including the cover structure, The air transfer device according to claim 1, wherein the front chamber is formed between the film structure and the cover structure.

6. The air transfer device according to claim 5, wherein the cover structure is made of wafer material or silicon.

7. The air transfer device according to claim 5, wherein the film structure and the cover structure are made of the same material.

8. The air transfer device according to claim 5, wherein an integrated circuit chip is formed in the cover structure.

9. The air transfer device according to claim 5, wherein the air transfer device is connected to an integrated circuit chip via a connector or a conductive ball.

10. The air transfer device according to claim 9, wherein the connector or conductive ball is disposed between the cover structure and the integrated circuit chip.

11. The air transfer device according to claim 5, wherein the air transfer device includes a pad disposed on the upper part of the cover structure.

12. The air transfer device according to claim 5, wherein the air transfer device includes a thermally conductive material disposed on the upper part of the cover structure.

13. The air transfer device according to claim 1, comprising an upper injection type cover structure.

14. The air transfer device according to claim 1, comprising a side-injection type cover structure.

15. The air transfer device according to claim 1, wherein the air transfer device is arranged on a flexible printed circuit board.

16. The air transport device according to claim 15, wherein the drive circuit is connected to the flexible printed circuit board and supplies an electrical signal to the air transport device.

17. The air transfer device according to claim 1, wherein a silicon through-via is formed within the air transfer device.

18. The air transfer device is located inside the mobile device. The air transfer device according to claim 1, wherein the air transfer device is attached to a heat spreader located within the mobile device.

19. The air transfer device is formed on the base, A rear cavity is formed within the base, The air transfer device according to claim 1, wherein the airflow flows between the surrounding environment and the rear cavity.

20. The air transfer device is wire-bonded to a printed circuit board, according to claim 1.

21. The air transfer device according to claim 1, wherein an integrated circuit chip is disposed in the rear cavity of the air transfer device.

22. The air transfer device according to claim 1, comprising a temperature sensor.

23. The air transfer device according to claim 22, wherein a controller is connected to the temperature sensor and controls the intensity of the airflow generated by the air transfer device.

24. The air transfer device is placed on a base or substrate. The air transfer device according to claim 1, wherein a channel is formed in the base or the substrate.

25. The air transfer device according to claim 24, wherein the airflow generated by the air transfer device flows through the channel.

26. The air transfer device according to claim 1, comprising an upper intake cover structure or a side intake cover structure.

Citation Information

Patent Citations

  • EP4,283,610

  • TWM552,163U

  • Airflow generator and array of airflow generators

    US20170276149A1

  • Semiconductor package including heat sink

    US20190172816A1

  • Optical scanner

    US20190187459A1