Substrate processing apparatus and substrate processing method

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method that improve the uniformity of the thickness of the film formed on the surface of a substrate to be processed. [Solution] The substrate processing apparatus 1 of the embodiment includes a rotating holding unit 10 that holds and rotates a substrate W having a film F formed on a surface to be processed S, a processing liquid supply unit 20 that supplies processing liquid to the surface to be processed S of the substrate W held and rotated by the rotating holding unit 10, a heating unit 40 having a plurality of heating sources 44 provided along the radial direction of the substrate W and heating the substrate W with the heating sources 44, and a control device 60 including a heating source control unit that controls the heating sources 44 to perform local etching processing on the film F by locally heating the surface to be processed S to which processing liquid has been supplied by the processing liquid supply unit 20 based on thickness distribution information of the film F.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] A single-wafer substrate processing apparatus is known that performs processing such as etching or resist removal on a film formed on a processed surface of a substrate while rotating the substrate such as a semiconductor wafer and supplying a processing liquid to the entire processed surface of the substrate.

[0003] In the processing of a film with a processing liquid, generally, the higher the temperature of the processing liquid, the higher the processing rate for the film. For example, in an etching process, the higher the temperature of the processing liquid, the higher the etching rate. In a single-wafer substrate processing apparatus, the processing liquid is discharged near the center of the substrate and supplied to the entire processed surface of the substrate by the centrifugal force generated by the rotation of the substrate. Therefore, the temperature of the processing liquid supplied to the substrate decreases as it moves toward the outer periphery, so the same processing rate cannot be obtained across the entire processed surface. Thus, a technique of maintaining the same processing rate across the entire processed surface by heating the substrate or the processing liquid supplied onto the substrate is known.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] Here, there may be variations in the thickness of the film formed on the processed surface of the substrate. When there are variations in the film thickness, it is difficult to make the film thickness uniform by simply heating the substrate or the processing liquid supplied onto the substrate as in the above-described conventional technology to maintain the same processing rate across the entire processed surface of the substrate.

[0006] Embodiments of the present invention have been proposed to solve the above-mentioned problems, and their objective is to provide a substrate processing apparatus and a substrate processing method that can improve the uniformity of the thickness of the film formed on the surface of the substrate to be processed. [Means for solving the problem]

[0007] A substrate processing apparatus according to an embodiment of the present invention comprises: a rotating holding unit for holding and rotating a substrate having a film formed on a surface to be processed; a processing liquid supply unit for supplying a processing liquid to the surface to be processed of the substrate held and rotating by the rotating holding unit; a heating unit having a plurality of heating sources provided along the radial direction of the substrate and heating the substrate with the heating sources; and a heating source control unit that controls the heating sources to perform local processing on the film by locally heating the surface to be processed to which the processing liquid is supplied by the processing liquid supply unit, based on the thickness distribution information of the film.

[0008] A substrate processing method according to an embodiment of the present invention comprises: a holding step of holding a substrate having a film formed on a surface to be processed; a processing liquid supply step of rotating the held substrate and supplying a processing liquid to the surface to be processed of the substrate; and a local processing step of locally processing the film by controlling a plurality of heating sources provided along the radial direction of the substrate based on thickness distribution information of the film and locally heating the surface to be processed to which the processing liquid has been supplied. [Effects of the Invention]

[0009] According to embodiments of the present invention, the uniformity of the thickness of the film formed on the surface of the substrate to be treated can be improved. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic axial cross-sectional view showing the overall configuration of the substrate processing apparatus according to the embodiment. [Figure 2] This is a schematic plan view of the substrate processing apparatus according to the embodiment. [Figure 3]This is a block diagram of the control device. [Figure 4] This is a flowchart showing the processing procedure of the embodiment. [Figure 5] This is a schematic plan view showing the execution state of the local etching process. [Figure 6] In the local etching process, (a) shows the state in which local heating is being performed on the substrate by a heat source, and (b) shows the state in which heating by the heat source has been stopped and local heating is temporarily not being performed. [Figure 7] This is a side view showing the configuration of the processing liquid supply unit according to a modified example. [Figure 8] This is a plan view showing the configuration of the heating section in a modified example. [Figure 9] This flowchart shows the processing procedure of the substrate processing apparatus in a modified example. [Modes for carrying out the invention]

[0011] Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the embodiments described below.

[0012] [Summary] As shown in Figure 1, the substrate processing apparatus 1 processes the substrate W by supplying a processing liquid from a processing liquid supply unit 20 to the substrate W while rotating the substrate W held in the rotating holding unit 10. The substrate processing apparatus 1 of this embodiment is a single-wafer type apparatus that supplies a processing liquid to the substrate W to perform etching. That is, in this specification, local etching is described as local processing and overall etching is described as overall processing.

[0013] The substrate W processed by this embodiment is, for example, a disc-shaped silicon wafer on which a film F, such as a silicon nitride film or a silicon oxide film, is formed on the surface S to be processed. The processing solution is, for example, an aqueous solution containing phosphoric acid (hereinafter referred to as phosphoric acid solution). The concentration of phosphoric acid in the processing solution is, for example, 85 to 94 wt%.

[0014] The substrate processing apparatus 1 includes a heating unit 40 having a plurality of heating sources 44 and a detection mechanism 50 that detects the thickness of a film F formed on a processing surface S of a substrate W. The plurality of heating sources 44 are arranged side by side along the radial direction of the substrate W, and each heating source 44 faces the processing surface S of the substrate W when performing an etching process. In the present embodiment, first, a local etching process is performed to etch only the thick portions in the plane of the film F, and after the local etching process is completed, a global etching process is performed to etch the entire film F formed on the processing surface S.

[0015] In the local etching process, based on the thickness distribution information created based on the thickness of the film F detected by the detection mechanism 50, local etching is performed only on the thick portions in the plane of the film F. That is, in the local etching process, the substrate processing apparatus 1 controls each heating source 44 so that only the locations on the processing surface S of the substrate W where etching is to be performed are heated.

[0016] [Configuration] As shown in FIG. 1, the substrate processing apparatus 1 of the present embodiment includes a rotation holding unit 10, a processing liquid supply unit 20, a liquid receiving unit 30, a heating unit 40, a detection mechanism 50, a control device 60, and a cleaning liquid supply unit 70. In FIG. 1, the cleaning liquid supply unit 70 is omitted.

[0017] (Rotation Holding Unit) The rotation holding unit 10 holds and rotates the substrate W. The rotation holding unit 10 includes a rotation table 11, chuck pins 12, and a drive unit 13. The rotation table 11 is a cylindrical member, and one end is closed by an opposing surface 11a. The opposing surface 11a is a circular surface having a diameter larger than that of the substrate W and faces the substrate W to be processed with a gap therebetween.

[0018] The chuck pin 12 is a fixture that holds the substrate W at a distance from the opposing surface 11a of the rotary table 11. The chuck pin 12 is provided so as to project from the opposing surface 11a of the rotary table 11. A plurality of chuck pins 12 are provided at equal intervals along the position corresponding to the outer peripheral edge of the substrate W. Further, the chuck pin 12 is movably provided between a closed position where it contacts the outer peripheral edge of the substrate W and holds the substrate W and an open position where it releases the substrate W by being separated from the outer peripheral edge of the substrate W by an opening / closing mechanism not shown. More specifically, as shown in FIG. 2, the chuck pin 12 is eccentrically arranged on the top surface of the cylindrical rotating member 12a. By the opening / closing mechanism, the rotating member 12a rotates about its center axis, whereby the chuck pin 12 moves between the closed position and the open position. In addition, in FIG. 2, the cup portion 31 is omitted.

[0019] The drive unit 13 is a drive source (motor) that rotates the rotary table 11. By rotating the rotary table 11, the drive unit 13 rotates the substrate W held by the chuck pin 12 about an axis that passes through the center C of the substrate W and extends in a direction orthogonal to the processing surface S with the axis as the rotation axis.

[0020] (Processing liquid supply unit) The processing liquid supply unit 20 supplies the processing liquid to the processing surface S of the substrate W held by the rotation holding unit 10. More specifically, the processing liquid supply unit 20 supplies the processing liquid at the first temperature to the processing surface S of the substrate W during the local etching process, and supplies the processing liquid at the second temperature to the processing surface S of the substrate W during the overall etching process. The first temperature is lower than the second temperature. Therefore, in the following description, the processing liquid at the first temperature is referred to as the "low-temperature processing liquid", and the processing liquid at the second temperature is referred to as the "high-temperature processing liquid". When the low-temperature processing liquid and the high-temperature processing liquid are not distinguished, they are simply referred to as the processing liquid. The processing liquid supply unit 20 includes a processing liquid nozzle 21, a processing liquid supply pipe 22, a low-temperature processing liquid supply source 23, a high-temperature processing liquid supply source 24, a valve 25, an arm 26, and a moving mechanism 27.

[0021] The processing liquid nozzle 21 discharges the processing liquid towards the center C of the substrate W. The processing liquid nozzle 21 is connected to a low-temperature processing liquid supply source 23 and a high-temperature processing liquid supply source 24 via a processing liquid supply pipe 22.

[0022] The cryogenic treatment liquid supply source 23 is a tank for storing the cryogenic treatment liquid. The cryogenic treatment liquid supply source 23 has a heating mechanism (not shown), such as a heater. The heating mechanism heats the treatment liquid to generate a cryogenic treatment liquid with a temperature of a first temperature. The heating mechanism also maintains the temperature of the generated cryogenic treatment liquid at the first temperature. Here, the first temperature is the temperature at which the etching process of the film F formed on the surface S of the substrate W does not proceed by supplying the cryogenic treatment liquid to the substrate W alone. The first temperature is, for example, 100°C or lower, and preferably room temperature. Note that if the first temperature is room temperature, the cryogenic treatment liquid supply source 23 does not need to have a heating mechanism.

[0023] The high-temperature processing liquid supply source 24 is a tank for storing the high-temperature processing liquid. The high-temperature processing liquid supply source 24 has a heating mechanism (not shown), such as a heater. The heating mechanism heats the processing liquid to generate a high-temperature processing liquid with a second temperature. The heating mechanism also maintains the temperature of the generated high-temperature processing liquid at the second temperature. Here, the second temperature is the temperature at which the etching process of the film F proceeds rapidly when the high-temperature processing liquid is supplied to the substrate W, and is, for example, about 160°C. Note that the etching process proceeding means that a portion of the film F formed on the surface S of the substrate W to be processed dissolves due to the supply of the processing liquid.

[0024] Valve 25 is installed in the processing liquid supply pipe 22. By opening and closing valve 25, the discharge of processing liquid from the processing liquid nozzle 21 is started and stopped. There are two valves 25: valve 25a is installed in the processing liquid supply pipe 22a connected to the low-temperature processing liquid supply source 23, and valve 25b is installed in the processing liquid supply pipe 22b connected to the high-temperature processing liquid supply source 24. By controlling the opening and closing of each valve 25a and 25b, either low-temperature or high-temperature processing liquid is discharged from the processing liquid nozzle 21. Valve 25 is electrically connected to the control device 60, and the opening and closing of valve 25 is controlled by the control device 60.

[0025] The arm 26 holds the processing liquid nozzle 21. The arm 26 can move the processing liquid nozzle 21 to a discharge position and a retracted position by the moving mechanism 27. The discharge position is the position where the processing liquid nozzle 21 discharges the processing liquid, for example, a position facing the center C of the substrate W. The retracted position is a position that does not interfere with the loading or unloading of the substrate W or the detection of the film thickness F by the detection mechanism 50, for example, a position outside the cup portion 31. Note that the tip of the arm 26 that holds the processing liquid nozzle 21 in the discharge position is offset from the position facing the center C of the substrate W in a plan view. This is to prevent interference between the arm 26 when the processing liquid nozzle 21 is in the discharge position and the heat source 44 located in the heating position during etching, as the tip of the heat source 44 located in the heating position is located on the center C of the substrate W, as described later. The moving mechanism 27 is electrically connected to the control device 60, and the control device 60 controls the moving mechanism 27 to move the arm 26 and the processing liquid nozzle 21.

[0026] (Liquid receiving section) The liquid receiving section 30 is provided so as to surround the rotating holding section 10 and receives the processing liquid splashed from the rotating substrate W. The liquid receiving section 30 discharges the received processing liquid to the outside of the substrate processing apparatus 1. The liquid receiving section 30 has a cup section 31 and a receiving section 32.

[0027] The cup portion 31 is a cylindrical body that covers the periphery of the rotating holding portion 10 with gaps in between, and is bent so that its upper diameter narrows. The receiving portion 32 is an annular container with an open top, located below the cup portion 31. The cup portion 31 is provided to be movable up and down by a lifting mechanism (not shown) so that it can be retracted when loading or unloading the substrate W.

[0028] The processing liquid scattered from the substrate W is received by the cup portion 31, falls downward along the inner wall of the cup portion 31, and flows into the receiving portion 32 located below the cup portion 31. The processing liquid that flows into the receiving portion 32 is discharged outside the substrate processing apparatus 1 through an outlet (not shown) formed on the bottom surface of the receiving portion 32.

[0029] (heating part) The heating unit 40 heats the substrate W, which is held and rotated by the rotating holding unit 10, by irradiating it with light from the heating source 44. The heating unit 40 heats the substrate W to which the processing liquid is supplied by the processing liquid supply unit 20, thereby heating the processing liquid on the substrate W through heat conduction from the substrate W.

[0030] The heating unit 40 includes an arm 41, a moving mechanism 42, a holding unit 43, and a plurality of heating sources 44. The arm 41 is connected to the moving mechanism 42. The arm 41 can be moved by the moving mechanism 42 in a direction parallel to the opposing surface 11a of the rotary table 11 (horizontal direction), and the heating sources 44 can be moved to a heating position and a retracted position. The heating position is the position in which each heating source 44 faces the substrate W. The retracted position is the position in which each heating source 44 does not obstruct the loading or unloading of the substrate W or the detection of the thickness of the film F by the detection mechanism 50, for example, a position outside the cup portion 31. The arm 41 may also be movable by the moving mechanism 42 in a direction perpendicular to the opposing surface 11a of the rotary table 11 (height direction).

[0031] The holding portion 43 is provided at the tip of the arm 41. The holding portion 43 holds each heating source 44. When the heating source 44 is positioned at the heating location, it faces the substrate W. Multiple heating sources 44 are provided. In this embodiment, 10 heating sources 44 are provided. The heating sources 44 are referred to as 44a, 44b, 44c...44j, starting from the portion closest to the arm 41, and are simply referred to as heating source 44 when no distinction is made.

[0032] Multiple heating sources 44 are arranged in a straight line. Each heating source 44 is connected to an adjacent heating source 44. That is, the heating sources 44 are arranged side by side without any gaps. The multiple heating sources 44 are provided along the radial direction and are arranged to face each other in at least the region from the center C of the substrate W to the outer edge. As a result, the heating region, which is the region heated by light irradiation from the multiple heating sources 44, includes at least the region extending from the center C of the substrate W to the outer edge. In this embodiment, as shown in Figure 2, the total radial length of the multiple heating sources 44 is the same as the radius of the substrate W. That is, the length from heating source 44a to heating source 44j is the same as the radius of the substrate W. As a result, the longitudinal length of the heating region is the same as the radius of the substrate W. When each heating source 44 is placed in the heating position, it faces the substrate W, and the tip of heating source 44j is positioned on the center C of the substrate W. Therefore, the longitudinal direction of the heating region corresponds to the radius of the substrate W. Therefore, by rotating the substrate W once, the entire surface S of the substrate W to be processed can be heated by the heating source 44. Note that when each heating source 44 is in the heating position, it is aligned linearly along the radial direction from the center C of the substrate W toward the outer edge and faces the substrate W. In other words, when the heating source 44 is in the retracted position, it does not face the substrate W, and is not always positioned along the radial direction of the substrate W.

[0033] The heating source 44 is a light source that emits light (electromagnetic waves) of a wavelength that heats the substrate W. The heating output of the heating source 44 can be changed by adjusting the emission intensity. The heating output is controlled by the heating source control unit 63, which will be described later. The light emitted by the heating source 44 is light of a wavelength that penetrates the processing liquid and is absorbed by the substrate W. By irradiating the substrate W with light of such a wavelength, the substrate W can be heated. Here, "absorbed by the substrate W" means that the light incident on the substrate W is absorbed to the extent that the substrate W can be sufficiently heated, and this includes not only complete absorption by the substrate W, but also the reflection or transmission of some of the light by the substrate W. Also, "penetrates the processing liquid" means that the light incident on the processing liquid penetrates the processing liquid to the extent that the substrate W can be sufficiently heated, and this includes the absorption or reflection of some of the light by the processing liquid.

[0034] The heating source 44 preferably has a short rise time, meaning that the time from the start of heating by the heating source control unit 63 to reaching a predetermined heating output is short. For example, a heating source 44 with a rise time of a few milliseconds (ms) or less is used. In local etching, it is necessary to etch only the thicker parts of the film F in the plane of the film while rotating the substrate W. Therefore, by shortening the rise time of the heating source 44, only the thicker parts of the film F formed on the substrate W can be heated locally, and the influence of heat on areas that do not need to be etched can be suppressed. It is also preferable that the heating source 44 has a short fall time. A short fall time includes cases where the time from a predetermined heating output to stopping heating is short, or cases where the time from reducing the heating output from a predetermined heating output to reaching the reduced heating output is short. For example, a heating source 44 with a fall time of a few milliseconds (ms) or less is used. By shortening the fall time of the heating source 44, only the thicker parts of the film F formed on the substrate W can be heated locally, and the influence of heat on areas that do not need to be etched can be suppressed.

[0035] Furthermore, the heating time of the heating section 40 by the heating source 44 in the local etching process is shorter than the heating time in the overall etching process. The heating time is the time from when the heating by the heating source 44 finishes rising until it starts to fall down, that is, the time during which a predetermined heating output is maintained. The heating time in the local etching process is, for example, a few milliseconds (ms) or less.

[0036] As the heating source 44, for example, a laser diode (LD) that emits heating light is used. The wavelength of the light emitted by this LD is, for example, 350 to 1060 nm (350 nm or more, and 1060 nm or less). More preferably, the central wavelength is 395 to 940 nm (395 nm or more, and 940 nm or less). In this embodiment, an LD with a central wavelength of 395 nm is used.

[0037] By setting the wavelength of light from the heating source 44 to the above wavelength, even if the light is irradiated from above the space in which the substrate W is held, that is, from above the processing solution supplied to the substrate W, the light from the heating source 44 will pass through the processing solution on the substrate W and be absorbed by the substrate W, thereby heating the substrate W. Then, the temperature of the processing solution rises due to heat conduction from the substrate W, and the etching rate (processing rate) increases.

[0038] (Detection mechanism) The detection mechanism 50 detects the thickness of the film F formed on the surface S of the substrate W. The detection mechanism 50 has a detection unit 51 and a moving mechanism 52. The detection unit 51 can use a laser displacement meter or a camera, and detects the thickness of the film F without contact with the film F. As shown in Figure 1, the detection unit 51 is provided above the substrate W held by the rotating holding unit 10. The detection unit 51 detects the thickness of the film F formed on the surface S of the substrate W while moving. The moving mechanism 52 moves the detection unit 51 in a direction parallel to the opposing surface 11a of the rotating table 11 (horizontal direction). The detection unit 51 is provided so as to be movable between a detection position and a retracted position by the moving mechanism 52.

[0039] The detection position is a position where the thickness of the film F can be detected, for example, a position that overlaps with the surface S of the substrate W in a plan view. The detection unit 51 can detect the total thickness of the film F formed on the surface S of the substrate W by moving in a direction parallel to the opposing surface 11a of the rotary table 11 at the detection position. The retracted position is a position that does not obstruct the processing liquid supply unit 20 and the heating unit 40 during loading or unloading of the substrate W or during etching, for example, a position outside the cup portion 31. The detection unit 51 transmits the detected film thickness and the detected position within the plane of the film F to the control device 60 in correspondence.

[0040] (Cleaning fluid supply unit) The substrate processing apparatus 1 is further equipped with a cleaning liquid supply unit 70, as shown in Figure 2. The cleaning liquid supply unit 70 supplies cleaning liquid to the substrate W held by the rotating holding unit 10. The cleaning liquid is also called a rinse liquid, and for example, pure water can be used. The cleaning liquid supply unit 70 has a cleaning liquid nozzle 71, a moving mechanism 72, and an arm 73.

[0041] The cleaning liquid nozzle 71 discharges the cleaning liquid near the center C of the substrate W held by the rotating holding unit 10. When discharging the cleaning liquid, the cleaning liquid nozzle 71 faces the substrate W. The cleaning liquid nozzle 71 is located at the tip of the arm 73. The moving mechanism 72 moves the arm 73. By moving the arm 73, the moving mechanism 72 moves the cleaning liquid nozzle 71. When discharging the cleaning liquid, the moving mechanism 72 moves the cleaning liquid nozzle 71 to a position facing the center C of the substrate W.

[0042] The cleaning fluid supply unit 70 (not shown in the figure) includes a cleaning fluid supply source for storing cleaning fluid, a cleaning fluid supply pipe connecting the cleaning fluid supply source and the cleaning fluid nozzle 71, and a valve that opens and closes to start and stop the discharge of cleaning fluid. The valve is electrically connected to the control device 60, and its opening and closing are controlled by the control device 60.

[0043] (Control device) The control device 60 controls various parts of the substrate processing apparatus 1. The control device 60 has a processor that executes programs to realize various functions of the substrate processing apparatus 1, a memory that stores various information such as programs and operating conditions, and drive circuits that drive each element. In other words, the control device 60 controls the rotation holding unit 10, the processing liquid supply unit 20, the liquid receiving unit 30, the heating unit 40, the detection mechanism 50, the cleaning liquid supply unit 70, and so on.

[0044] More specifically, as shown in Figure 3, the control device 60 includes a mechanism control unit 61, a storage unit 62, a heating source control unit 63, and a film thickness determination unit 64. The mechanism control unit 61 controls the opening and closing of the chuck pin 12 of the rotating holding unit 10, the operation of the drive unit 13, the valve 25 of the processing liquid supply unit 20, the moving mechanism 42 of the heating unit 40, the moving mechanism 52 of the detection mechanism 50, and the valve of the cleaning liquid supply unit 70.

[0045] The memory unit 62 stores information necessary for processing each part of the substrate processing apparatus 1. The memory unit 62 stores the thickness difference from the minimum film thickness of the film F, which is the threshold for determining that local etching is necessary. The memory unit 62 also stores the control program for the heating source 44 (such as the correspondence between the thickness of the film F, the heating output, and the heating time) for reducing the thickness below the threshold through local etching. The memory unit 62 also stores thickness distribution information created by the film thickness determination unit 64, which will be described later.

[0046] The heating source control unit 63 controls the heating sources 44. More specifically, the heating source control unit 63 controls the start or stop of heating by each heating source 44 and the heating output. In addition, during local etching, the heating source control unit 63 controls the heating source 44 to heat when the location to be etched on the film F faces the heating source 44. In other words, during local etching, the heating source control unit 63 controls the heating source 44 so that it does not emit light when facing a location that does not need to be etched. Furthermore, during overall etching, the heating source control unit 63 controls the heating sources 44 to maintain the temperature of the processing solution supplied to the surface S of the substrate W. In addition, during overall etching, the heating source control unit 63 may control the output of the heating sources 44 to further increase the temperature of the processing solution supplied to the surface S of the substrate W, as well as maintain the temperature of the processing solution.

[0047] The film thickness determination unit 64 extracts the minimum film thickness from the film thicknesses of the film F detected by the detection unit 51. The minimum film thickness is the thickness of the thinnest part of the film F in its plane. The film thickness determination unit 64 compares the minimum film thickness with the thicknesses of the other film F detected by the detection unit 51 and calculates the film thickness difference. The film thickness determination unit 64 compares the calculated film thickness difference with a threshold value stored in the storage unit 62 and determines whether the film thickness difference is greater than or equal to the threshold value. The film thickness determination unit 64 creates thickness distribution information that associates the position of the film F in its plane at the location where the film thickness difference is determined to be greater than or equal to the threshold value with the film thickness difference at that location. The thickness distribution information created by the film thickness determination unit 64 is stored in the storage unit 62.

[0048] [Processing method] The operation of the substrate processing apparatus 1 of this embodiment will be explained with reference to Figures 1 to 3 above, as well as the flowchart in Figure 4 and the explanatory diagrams in Figures 5 and 6. Note that a substrate processing method that processes the substrate W according to the following procedure is also one aspect of this embodiment. Furthermore, although Figure 5 shows only one example of a thick film F, there may be multiple thick areas scattered throughout. Additionally, the thickness of the film F in Figure 6 is exaggerated for ease of understanding.

[0049] First, the processing liquid nozzle 21 of the processing liquid supply unit 20, the heating source 44 of the heating unit 40, and the detection unit 51 of the detection mechanism 50 are positioned in retracted positions so as not to obstruct the loading of the substrate W. Furthermore, the substrate W to be processed is a substrate on which a film F, such as a silicon nitride film or a silicon oxide film, is formed on the surface S to be processed.

[0050] In this state, the chuck pin 12 is in the open position, the substrate W mounted on the hand of the transport robot is loaded, and the chuck pin 12 is closed, so that the outer edge of the substrate W is held by the chuck pin 12 (step S01).

[0051] Once the substrate W has been loaded, the detection mechanism 50 starts detecting the thickness of the film F (step S02). The detection unit 51 moves to the detection position by the moving mechanism 52. At the detection position, the detection unit 51 moves in a direction parallel to the opposing surface 11a of the rotary table 11, thereby detecting the total thickness of the film F formed on the surface S of the substrate W. The detection result is transmitted to the film thickness determination unit 64.

[0052] The film thickness determination unit 64 extracts the minimum film thickness Tmin based on the detection result of the detection unit 51. The film thickness determination unit 64 then calculates the difference between the minimum film thickness Tmin and the thickness of the film F in other parts, and determines whether that difference is greater than or equal to a threshold stored in the storage unit 62 (step S03).

[0053] Specifically, the thickness of the film F is determined by detecting a minimum film thickness Tmin and film thicknesses T1, T2, and T3. Note that areas other than film thicknesses T1 to T3 are considered to have the minimum film thickness Tmin. Film thickness T1 is the thickest, followed by T2 and T3, which become thinner in that order, approaching the minimum film thickness Tmin. The film thickness determination unit 64 compares the minimum film thickness Tmin with each film thickness T1, T2, and T3 and calculates the difference. The film thickness determination unit 64 compares the calculated difference between each film thickness T1, T2, and T3 with a threshold value and determines whether the difference is greater than or equal to the threshold value. In this embodiment, it is assumed that all film thicknesses T1 to T3 are greater than or equal to the threshold value. Therefore, the film thickness determination unit 64 creates thickness distribution information from the positions of film thicknesses T1 to T3 in the plane of the film F and the difference between the minimum film thickness Tmin and each film thickness T1, T2, and T3. The created thickness distribution information is stored in the storage unit 62.

[0054] If the film thickness determination unit 64 determines that there are no areas exceeding the threshold (step S03 No), local etching is not required. In other words, steps S05 to S08 are omitted, and the process proceeds to the overall etching process from step S09 onwards.

[0055] If the film thickness determination unit 64 determines that there are areas where the thickness exceeds the threshold (step S03 Yes), the process proceeds from step S04 to step S08, which is the local etching process. In addition, if there is at least one area in the plane of the film F where the difference from the minimum film thickness Tmin is greater than or equal to the threshold, the process proceeds to the local etching process. In other words, even if the difference between film thicknesses T2 and T3 and the minimum film thickness Tmin is less than the threshold, if the difference between film thickness T1 and the minimum film thickness Tmin is greater than or equal to the threshold, the process proceeds to the local etching process. When the process proceeds to the local etching process, the rotary table 11 is rotated at the first rotational speed. As a result, the substrate W held by the chuck pin 12 rotates at the first rotational speed (step S04). At this time, the detection unit 51 has moved to the retracted position.

[0056] As the substrate W begins to rotate, the processing liquid nozzle 21 moves to the discharge position and the heating source 44 moves to the heating position, as shown in Figure 5. Then, the valve 25a of the processing liquid supply unit 20 opens, and a low-temperature processing liquid at the first temperature is discharged from the processing liquid nozzle 21 toward the center C of the substrate W (step S05). During local etching, the low-temperature processing liquid spreads across the entire surface S of the substrate W to be processed. Since the low-temperature processing liquid is not at a temperature at which etching proceeds, the etching process has not yet started at this point.

[0057] When the supply of the cryogenic treatment liquid reaches a predetermined amount, the treatment liquid supply unit 20 closes the valve 25a and stops the discharge of the cryogenic treatment liquid (step S06). When the discharge of the cryogenic treatment liquid stops, local heating is started, in which the thicker parts of the film F are locally heated by the heating source 44 (step S07).

[0058] Each heating source 44 faces the substrate W at the heating position. Since the substrate W is rotating, the film thickness portions T1 to T3 pass under the heating source 44 with each rotation. As shown in Figure 6(a), the heating source control unit 63 starts heating the opposing heating sources 44e to 44h when the film thickness portions T1, T2, and T3 of the rotating substrate W face the heating source 44. In other words, heating sources 44 that do not face the film thickness portions T1, T2, and T3 (heating sources 44 that face the minimum film thickness portion Tmin) do not start heating. The detection unit 51 detects the in-plane position of the film F with film thicknesses T1, T2, and T3 in correspondence with the thickness, so it can determine the timing when the film thickness portions T1, T2, and T3 of the substrate W face the heating source 44.

[0059] Furthermore, the heating source control unit 63 increases the heating output as the difference between the minimum film thickness Tmin and the film thicknesses T1, T2, and T3 increases. Specifically, the heating source control unit 63 controls each heating source 44 so that the heating output is increased for the thickest film thickness T1, and decreases in the order of film thicknesses T2 and T3. In other words, the heating source control unit 63 controls heating source 44g so that the heating output is highest when heating source 44g is facing the portion with film thickness T1, controls heating sources 44f, 44g, and 44h so that the heating output is the next highest when heating sources 44f, 44g, and 44h are facing the portion with film thickness T2, and controls heating sources 44e and 44f so that the heating output is lowest when heating sources 44e and 44f are facing the portion with film thickness T3.

[0060] On the other hand, as shown in Figure 6(b), if portions of the substrate W with film thicknesses T1, T2, and T3 are not facing each heating source 44, the heating source control unit 63 stops heating by heating sources 44e to 44h. That is, while heating sources 44e to 44h are facing the portion with the minimum film thickness Tmin (the portion where the difference from the minimum film thickness Tmin is less than or equal to a threshold), heating sources 44e to 44h do not heat the substrate W. When the rotation of the substrate W continues and the positions of film thicknesses T1, T2, and T3 reach a position facing the heating source 44, the heating source control unit 63 controls heating sources 44e to 44h to heat the substrate W.

[0061] The heating process for local etching of film thicknesses T1, T2, and T3 is repeated until a predetermined time is reached (Step S08 No). The heating time for local etching is shorter than the heating time for overall etching. Once the predetermined time has elapsed (Step S08 Yes), heating by the heating sources 44e to 44h is stopped, and the local etching process is completed. After the local etching process is completed, the process moves on to overall etching.

[0062] When the overall etching process begins, the rotary table 11 is rotated at a second rotational speed. This causes the substrate W, held by the chuck pins 12, to rotate at the second rotational speed (step S09). The second rotational speed, which is the rotational speed of the substrate W during overall heating, is faster than the first rotational speed, which is the rotational speed of the substrate W during local heating. When the substrate W is rotating at the second rotational speed, the valve 25b of the processing liquid supply unit 20 opens, and the processing liquid supply unit 20 discharges the high-temperature processing liquid, which is at a second temperature, toward the center C of the rotating substrate W (step S10). The heating source control unit 63 starts heating with all the heating sources 44, and overall heating begins, heating the entire surface S of the substrate W to be processed (step S11). The heating output of each heating source 44 may be the same, or the heating output of the heating source 44 facing the outer edge of the substrate W may be increased. Although the high-temperature processing liquid is supplied at a second temperature, its temperature may drop below the second temperature due to heat dissipation as it moves toward the outer edge. Therefore, by increasing the heating output of the heating source 44 facing the outer edge, the temperature of the high-temperature processing liquid supplied to the surface to be processed S is maintained uniformly across the entire surface to be processed S, enabling uniform etching.

[0063] This overall heating is repeated until a predetermined time has elapsed (Step S12 No). Once the predetermined time has elapsed (Step S12 Yes), the processing liquid supply unit 20 closes the valve 25b and stops the discharge of the high-temperature processing liquid from the processing liquid nozzle 21 (Step S13). At the same time, the heating source control unit 63 stops the irradiation of light from the heating source 44 and stops heating the substrate W.

[0064] The processing liquid nozzle 21 and the heating source 44 move to a retracted position, and the cleaning liquid nozzle 71 of the cleaning liquid supply unit 70 moves to a position facing the vicinity of the center C of the substrate W. Then, the valve of the cleaning liquid supply unit 70 opens, and a cleaning process begins in which cleaning liquid is discharged from the cleaning liquid nozzle 71 toward the vicinity of the center C of the rotating substrate W (step S14). After the cleaning process is performed for a predetermined time, the valve of the cleaning liquid supply unit 70 closes, and the discharge of cleaning liquid from the cleaning liquid nozzle 71 stops.

[0065] Next, the process moves to drying the substrate W (step S15). The substrate W is rotated at high speed for a predetermined time to remove the cleaning solution. Once the drying process is complete, the hand of the transport robot is inserted below the substrate W, and the chuck pin 12 opens, allowing the substrate W to be placed on the hand of the transport robot and transported out of the substrate processing device 1 (step S16).

[0066] Furthermore, the timing of stopping the discharge of the low-temperature treatment solution during the local etching process may be after the local heating in step S07 has been completed. In other words, local heating (step S07) may be performed after the discharge of the low-temperature treatment solution (step S05), and the discharge of the low-temperature treatment solution (step S06) may be stopped after the local heating has been completed (step S08 Yes).

[0067] Furthermore, the timing of stopping the discharge of the high-temperature processing solution during the overall etching process may be before the overall heating (step S11). In other words, the overall heating may be performed after supplying a predetermined amount of high-temperature processing solution and stopping the discharge of the high-temperature processing solution from the processing solution nozzle 21.

[0068] Furthermore, the rotation speed of the substrate W may be changed during the supply of the low-temperature processing solution in step S05 and during local heating by the heating source 44 in step S07. Specifically, the rotation speed during local heating by the heating source 44 should be the first rotation speed, and the rotation speed during the supply of the low-temperature processing solution may be faster than the first rotation speed. This allows the low-temperature processing solution supplied to the surface S of the substrate W to be processed to be efficiently spread across the entire surface S of the substrate W by centrifugal force.

[0069] The first rotational speed, which is the rotational speed during localized heating, is slower than the second rotational speed, which is the rotational speed of the substrate W during overall heating. By making the rotational speed during localized heating slower than the rotational speed during overall heating, it is possible to suppress the discharge of the low-temperature processing liquid supplied to the substrate W from the substrate W due to rotation, and to retain the low-temperature processing liquid on the surface S of the substrate W. Furthermore, by performing localized heating while rotating at a first rotational speed that is slower than the second rotational speed, areas with thicker film thickness within the plane of the film F can be heated more accurately.

[0070] [effect] (1) The substrate processing apparatus 1 of this embodiment, as described above, comprises: a rotating holding unit 10 that holds and rotates a substrate W having a film F formed on a surface to be processed S; a processing liquid supply unit 20 that supplies processing liquid to the surface to be processed S of the substrate W held and rotated by the rotating holding unit 10; a heating unit 40 having a plurality of heating sources 44 provided along the radial direction of the substrate W, which heats the substrate W with the heating sources 44; and a heating source control unit 63 that controls the heating sources 44 to perform local etching on the film F by locally heating the surface to be processed S to which processing liquid has been supplied by the processing liquid supply unit 20, based on thickness distribution information of the film F.

[0071] Furthermore, the substrate processing method of this embodiment includes a holding step of holding a substrate W having a film F formed on a surface to be processed S; a processing liquid supply step of rotating the held substrate W and supplying a processing liquid to the surface to be processed S of the substrate W; and a local etching step of controlling a plurality of heating sources 44 provided along the radial direction of the substrate W based on thickness distribution information of the film F, and locally heating the surface to be processed S to which the processing liquid has been supplied, thereby performing a local etching process on the film F.

[0072] In this way, based on the thickness distribution information, the heating source 44 corresponding to the thicker portion of the film F is controlled, and local etching is performed by heating only that portion. As a result, the thicker portions of the film F become thinner, and the uniformity of the thickness of the film F formed on the treated surface S of the substrate W is improved.

[0073] (2) The multiple heating sources 44 are arranged in conjunction so as to face each other in a region from the center C of the substrate W to the outer edge. As a result, by rotating the substrate W once, the heating sources 44 can face the entire surface to be processed S, so that heating can be performed over the entire surface to be processed S in accordance with the thickness distribution of the film F, and local etching is possible. Furthermore, since the entire surface to be processed S of the substrate W can face the heating sources 44, the entire surface to be processed S of the substrate W can be heated and etched uniformly during the overall etching process.

[0074] (3) The heating source control unit 63 controls the heating output of the heating source 44 based on the thickness distribution information of the film F. In other words, the heating output of the heating source 44 is increased for areas of the film F that are thicker, and decreased for areas that are relatively thin. This allows for efficient local etching of areas of the film F that are thicker, and enables the etching process to be performed with high precision, thereby further improving the uniformity of the film F thickness.

[0075] (4) The heating source 44 heats the substrate W by irradiating the surface S to be treated with light, and the irradiated light has a wavelength that penetrates the treatment solution. This makes it possible to heat the substrate W starting from the surface S to be treated on the substrate W. That is, the surface S of the substrate W that is closest to the treatment solution can be heated, and the treatment solution can be heated efficiently through the film F.

[0076] (5) The heating region, which is the area heated by light irradiation from the multiple heating sources 44, includes at least a region extending from the center C of the substrate W to the outer edge. As a result, by rotating the substrate W once, the entire surface S of the substrate W passes through the heating region, so that heating can be performed over the entire surface S of the substrate W in accordance with the thickness distribution of the film F, enabling localized etching. Furthermore, since the entire surface S of the substrate W passes through the heating region, the entire surface S of the substrate W can be heated and etched uniformly during the overall etching process.

[0077] (6) The length of the heating region in the longitudinal direction is the same as the radius of the substrate W. In other words, when the substrate W is rotated once, there are no overlapping areas of heating by the heating source 44. Therefore, in local etching, it is possible to easily control multiple heating sources 44. In addition, in overall etching, the entire film F formed on the surface S of the substrate W can be etched uniformly.

[0078] (7) After the local etching process is completed, the heating source control unit 63 controls the heating source 44 to perform an overall etching process, which involves proceeding with the etching process over the entire film F formed on the surface to be processed S. The substrate processing method further includes an overall etching process step, in which, after the local etching process step, the heating source 44 is controlled to perform an etching process over the entire film F formed on the surface to be processed S.

[0079] Suppose the process is reversed from this embodiment, with a general etching process followed by a local etching process. In the general etching process, the entire surface S of the substrate W is heated, so even after the general etching process is complete, the substrate W remains in a heat-retaining state. If a low-temperature treatment solution is supplied to perform a local etching process on a substrate W in this state, the low-temperature treatment solution may be heated by heat conduction from the substrate W, causing the etching process to proceed even in the minimum film thickness Tmin area, thus potentially affecting the local etching process with heat. A method of performing a cleaning process between the general etching process and the local etching process to prevent heat from affecting the local etching process could be considered, but this would result in poor productivity.

[0080] Therefore, in this embodiment, the overall etching process is performed after the local etching process. This allows the local etching process to be performed without being affected by the heat during the overall etching process, and the thickness of the film F can be made uniform with high precision. In addition, the overall etching process can be performed immediately after the local etching process, eliminating the need for cleaning processes that would be required if the order were reversed, and improving productivity.

[0081] (8) The heating time by the heating unit 40 in the local etching process is shorter than the heating time by the heating unit 40 in the overall etching process. By shortening the heating time during the local etching process, the effect of heating on areas that should not be etched, such as the minimum film thickness Tmin, can be suppressed, and the local etching process can be performed with high accuracy.

[0082] (9) In the local etching process, the temperature of the low-temperature processing solution supplied to the substrate W by the processing solution supply unit 20 is lower than the temperature of the high-temperature processing solution supplied to the substrate W by the processing solution supply unit 20 in the overall etching process. In this embodiment, the high-temperature processing solution supplied in the overall etching process is at a second temperature at which the etching process of the film F proceeds when supplied to the substrate W, whereas the low-temperature processing solution supplied in the local etching process is at a first temperature lower than the second temperature at which the etching process of the film F does not proceed when supplied to the substrate W. Therefore, in the local etching process, etching is not performed in the minimum film thickness Tmin portion that is not heated by the heating source 44, and etching is performed only in the thicker portions within the plane of the film F heated by the heating source 44. Thus, the local etching process can be performed with high precision, and the uniformity of the film thickness of the film F is improved.

[0083] (10) The substrate processing method further comprises a detection mechanism 50 for detecting the thickness of a film F formed on the surface to be processed S, and a film thickness determination unit 64 that calculates the difference between a minimum film thickness Tmin and other film thicknesses based on the thickness of the film F detected by the detection mechanism 50, determines whether the difference is greater than or equal to a threshold, and creates thickness distribution information including the areas where the difference is determined to be greater than or equal to a threshold, and the heating source control unit 63 controls the heating source 44 to perform local etching processing based on the thickness distribution information created by the film thickness determination unit 64.

[0084] As a result, the in-plane thickness difference of the film F formed on the surface S to be treated becomes smaller than the threshold. Therefore, the uniformity of the thickness of the film F formed on the surface S to be treated is further improved.

[0085] [Differentiation]

[0086] (1) In the above embodiment, a low-temperature processing liquid supply source 23 and a high-temperature processing liquid supply source 24 were provided, but the high-temperature processing liquid supply source 24 may be omitted. In this case, for example, as shown in Figure 7, the processing liquid supply unit 20 may further include a heating mechanism 28 in the middle of the processing liquid supply pipe 22. Then, the processing liquid discharged from the processing liquid nozzle 21 during the overall etching process is heated by the heating mechanism 28 to a second temperature before being supplied to the substrate W. As a result, a tank that serves as the high-temperature processing liquid supply source 24 is not required, and the substrate processing apparatus 1 can be made smaller.

[0087] (2) In the above embodiment, the low-temperature processing liquid and the high-temperature processing liquid were supplied to the substrate W by the same processing liquid nozzle 21, processing liquid supply pipe 22, arm 26 and moving mechanism 27, but two of each may be provided and configured separately for supplying the low-temperature processing liquid and the high-temperature processing liquid.

[0088] (3) Multiple heating units 40 may be provided. Providing multiple heating units 40 increases heating efficiency and improves the efficiency of the etching process. Multiple heating units 40 may be used separately for local etching, consisting of a heating source 44 with a short rise time, and for overall etching, consisting of a heating source 44 with a long rise time. In overall etching, using a heating source 44 with a long rise time allows heat to be diffused to areas other than the heating region by heat conduction during the rise time, compared to a heating source 44 with a short rise time. In other words, the temperature within the treated surface S of the substrate W can be raised uniformly, so the entire film F formed on the treated surface S of the substrate W can be etched more uniformly.

[0089] (4) Furthermore, the radial length of the multiple heating sources 44 does not have to be the same as the radius of the substrate W, and it is sufficient that the multiple heating sources 44 are arranged in a connected manner so as to face each other in a region from the center C to the outer edge of the substrate W. For example, as shown in Figure 8, the radial length of the multiple heating sources 44 arranged in a row may be the same as the diameter of the substrate W. As a result, when the substrate W rotates once, the entire surface S of the substrate W to be processed passes under the heating sources 44 twice, which increases the heating efficiency and improves the efficiency of the etching process.

[0090] In the above embodiment, the multiple heating sources 44 were connected and arranged linearly without gaps, but are not limited to this. As long as the entire substrate W can be heated, each heating source 44 may be arranged linearly with gaps between them. That is, the heating region that is heated by irradiating the surface S to be processed with light from the multiple heating sources 44 should include at least a region extending from the center C of the substrate W to the outer edge. In this case, during the local etching process, the heating source control unit 63 controls the heating source 44 to heat at the timing when the film thicknesses T1, T2, and T3 of the substrate W overlap with the heating region in a plan view.

[0091] Furthermore, the longitudinal length of the heating region does not have to be the same as the radius of the substrate W. As long as the heating region includes at least the region extending from the center C of the substrate W to the outer edge, the longitudinal length of the heating region may be longer than the radius of the substrate W. Also, for example, the longitudinal length of the heating region may be the same as the diameter of the substrate W. As a result, by rotating the substrate W once, the entire surface S of the substrate W to be processed passes through the heating region twice, thus increasing the heating efficiency and improving the efficiency of the etching process.

[0092] In the above embodiment, ten heating sources 44 are provided, but this is not limited to ten, as long as the entire surface S of the substrate W to be processed can be heated. For example, more than ten heating sources 44 may be provided. In this case, smaller heating sources are used compared to the case where ten heating sources 44 are provided. As a result, the area irradiated by each heating source 44 becomes smaller, so the heating source control unit 63 can control the heating of the substrate W more precisely in the radial direction than in the above embodiment.

[0093] (5) The detection mechanism 50 may detect the thickness of the film F again after the local etching process is completed. That is, as shown in Figure 9, after the local etching process is completed (after step S08), the detection unit 51 detects the thickness of the film F again (step S20), and the film thickness determination unit 64 determines whether the difference from the minimum film thickness Tmin on the entire surface S of the substrate W is less than the threshold (step S21). If the film thickness of the entire surface S is less than the threshold (step S21 Yes), the process proceeds to the overall etching process (step S09). On the other hand, if there is even a part of the film thickness that is greater than or equal to the threshold (step S21 No), the process returns to step S05, and the local etching process is performed again on the part of the film thickness that is greater than or equal to the threshold. This makes it possible to make the thickness of the film F more accurately uniform.

[0094] (6) The thickness of the film F does not need to be detected by the detection mechanism 50, and the detection mechanism 50 may be omitted. In this case, the thickness of the film F is stored in the storage unit 62 in advance using thickness distribution information detected by a different device other than the substrate processing device 1. The heating source control unit 63 can then control each heating source 44 based on this thickness distribution information. Furthermore, the position of the film F in the plane can be determined by using a notch or other mark provided on the substrate W as a reference position, and the thickness distribution information can be obtained by associating it with the reference position.

[0095] (7) In the above embodiment, the substrate processing apparatus 1 performed local etching and overall etching. However, the substrate processing apparatus 1 only needs to perform local etching, and the overall etching performed after local etching may be performed by another apparatus.

[0096] (8) The treatment solution is not limited to phosphoric acid solution. Any treatment solution whose etching rate is improved by heating is acceptable. For example, hydrofluoric acid can be used.

[0097] (9) The light used for heating by the heating source 44 is not limited to LDs. The light used for heating by the heating source 44 may also be an LED. The wavelength of the light from the LED may be the same as that of the LD.

[0098] (10) In the above embodiment, the substrate processing apparatus 1 performed an etching process on the film F formed on the surface S of the substrate W. However, any process in which the processing rate is improved by heating is acceptable. For example, the film F may be a resist film, and the process may be used to remove the resist film. In this case, for example, a mixed solution containing sulfuric acid and hydrogen peroxide is used as the processing solution.

[0099] [Other embodiments] While embodiments of the present invention have been described herein, these embodiments are presented as examples and are not intended to limit the scope of the invention. The above embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the scope of the invention. Embodiments and their variations are included in the scope and essence of the invention, as well as in the claims and their equivalents. [Explanation of Symbols]

[0100] 1. Substrate processing device 10 Rotating holding part 11 Rotating Table 12 chuck pins 13 Drive unit 20 Processing liquid supply unit 21 Processing liquid nozzle 22 Processing liquid supply pipe 23. Source of cryogenic treatment solution 24 High-temperature processing liquid supply source 25 valves 26 Arms 27 Moving mechanism 28 Heating mechanism 30 Liquid receiving section 31 Cup section 32 Receiving part 40 Heating section 41 Arm 42 Moving mechanism 43 Holding part 44 Heating source 50 Detection mechanism 51 Detection unit 52 Moving mechanism 60 Control device 61 Mechanism Control Unit 62 Storage section 63 Heat source control unit 64 Film Thickness Determination Unit 70 Cleaning fluid supply unit 71 Cleaning solution nozzle 72 Moving mechanism 73 Arm W board S Surface to be processed F membrane

Claims

1. A rotating holding unit that holds and rotates a substrate having a film formed on the surface to be processed, A processing liquid supply unit supplies processing liquid to the surface of the substrate to be processed, which is held and rotated by the rotating holding unit, A heating unit having a plurality of heating sources provided along the radial direction of the substrate, which heats the substrate with the heating sources, A heating source control unit controls the heating source to perform local processing on the film by locally heating the surface to be treated to which the processing liquid is supplied by the processing liquid supply unit, based on the thickness distribution information of the film. A substrate processing apparatus characterized by comprising:

2. The substrate processing apparatus according to claim 1, characterized in that the plurality of heating sources are arranged in conjunction so as to face each other in a region from the center to the outer edge of the substrate.

3. The substrate processing apparatus according to claim 1, characterized in that the heating source control unit controls the heating output of the heating source based on the thickness distribution information of the film.

4. The aforementioned heating source heats the substrate by irradiating the surface to be processed with light, The substrate processing apparatus according to claim 1, characterized in that the light irradiated has a wavelength that penetrates the processing solution.

5. The substrate processing apparatus according to claim 4, characterized in that the heating region, which is a region heated by the light irradiated by the multiple heating sources, includes at least a region extending from the center of the substrate to the outer edge.

6. The substrate processing apparatus according to claim 5, characterized in that the longitudinal length of the heating region is the same as the radius of the substrate.

7. The substrate processing apparatus according to claim 1, characterized in that the heating source control unit controls the heating source to perform an overall processing operation to advance the processing over the entire film formed on the surface to be processed after the local processing is completed.

8. The substrate processing apparatus according to claim 7, characterized in that the heating time by the heating unit in the local processing is shorter than the heating time by the heating unit in the overall processing.

9. The substrate processing apparatus according to claim 7, characterized in that, in the local processing, the temperature of the processing liquid supplied to the substrate by the processing liquid supply unit is lower than the temperature of the processing liquid supplied to the substrate by the processing liquid supply unit in the overall processing.

10. A detection mechanism for detecting the thickness of the film formed on the surface to be treated, A film thickness determination unit calculates the difference between the minimum film thickness and other film thicknesses based on the film thickness detected by the detection mechanism, determines whether the difference is greater than or equal to a threshold, and creates thickness distribution information including the locations where the difference is determined to be greater than or equal to the threshold. Furthermore, The substrate processing apparatus according to claim 1, characterized in that the heating source control unit controls the heating source to perform the local processing based on the thickness distribution information created by the film thickness determination unit.

11. A holding step for holding a substrate having a film formed on the surface to be processed, A process of supplying a processing liquid to the surface of the substrate to be processed by rotating the held substrate, A local processing step in which a plurality of heating sources provided along the radial direction of the substrate are controlled based on the thickness distribution information of the film to locally heat the surface to be processed to which the processing liquid is supplied, thereby performing local processing on the film; A substrate processing method characterized by comprising:

12. The substrate processing method according to claim 11, further comprising a whole processing step of controlling the heating source to process the entire film formed on the surface to be processed after the local processing step.

13. A detection step for detecting the thickness of the film formed on the surface to be treated, The process further includes a film thickness determination step of calculating the difference between the minimum film thickness and other film thicknesses based on the detected film thickness, determining whether the difference is greater than or equal to a threshold, and creating thickness distribution information that includes the locations where the difference is determined to be greater than or equal to the threshold, The substrate processing method according to claim 11, characterized in that the local processing step is performed locally by controlling the heating source based on the thickness distribution information created in the film thickness determination step.

Images