Semiconductor equipment

Abstract

The objective is to provide a semiconductor device that can be miniaturized. [Solution] The semiconductor device of the embodiment has an insulating substrate. It has a plurality of electrodes formed on a first surface facing one side in the thickness direction of the substrate. It has a side covering portion that covers at least a portion of the side surface of the outer surface of the substrate that intersects with the first surface. The portion of the first surface on which the plurality of electrodes are not formed when viewed from the thickness direction is covered by the surface covering portion. The plurality of electrodes have one or more electrode pairs, each consisting of a pair of electrodes arranged side by side along the edge of the first surface. The side covering portion is connected to the portion of the surface covering portion between at least one electrode pair. The comparative tracking index of the material constituting the surface covering portion and the material constituting the side covering portion are greater than the comparative tracking index of the material constituting the substrate.

Description

Technical Field

[0001] Embodiments of the present invention relate to semiconductor devices.

Background Art

[0002] In semiconductor devices, it is necessary to ensure a creepage distance (hereinafter simply referred to as "creepage distance") between a plurality of electrodes formed on a substrate to avoid failures due to tracking. For solder resist that covers the surface of the substrate, many products made of materials with a large comparative tracking index are in circulation. Therefore, the creepage distance between electrodes on the surface of the substrate is likely to be short. On the other hand, many substrates made of materials with a comparative tracking index smaller than that of the material constituting the solder resist are in circulation. Therefore, when a plurality of electrodes are formed side by side along the edge of the substrate, it is difficult to shorten the creepage distance between the electrodes on the side surface of the substrate. Therefore, it is difficult to narrow the interval between the electrodes, and it is difficult to miniaturize the semiconductor device.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The problem to be solved by the present invention is to provide a semiconductor device capable of miniaturization.

Means for Solving the Problems

[0005] The semiconductor device of this embodiment has an insulating substrate. It has a plurality of electrodes formed on a first surface facing one side in the thickness direction of the substrate. It has a side covering portion that covers at least a portion of the side surface of the outer surface of the substrate that intersects with the first surface. The portion of the first surface on which the plurality of electrodes are not formed when viewed from the thickness direction is covered by a surface covering portion. The plurality of electrodes have one or more electrode pairs, each consisting of a pair of electrodes arranged side by side along the edge of the first surface. The side covering portion is connected to the portion of the surface covering portion between at least one electrode pair. The comparative tracking index of the material constituting the surface covering portion and the material constituting the side covering portion are greater than the comparative tracking index of the material constituting the substrate. [Brief explanation of the drawing]

[0006] [Figure 1] A cross-sectional view showing a semiconductor device of an embodiment. [Figure 2] A perspective view showing a semiconductor device of an embodiment. [Figure 3] A perspective view showing a part of the semiconductor device of the embodiment. [Figure 4] A first plan view showing the manufacturing process of a semiconductor device according to an embodiment. [Figure 5] A second plan view showing the manufacturing process of a semiconductor device according to the embodiment. [Figure 6] A third plan view showing the manufacturing process of a semiconductor device according to the embodiment. [Figure 7] A perspective view showing a part of a semiconductor device of a first modified embodiment. [Figure 8] A perspective view showing a part of a semiconductor device of a second modified embodiment. [Figure 9] A perspective view showing a semiconductor device of a third modified embodiment. [Figure 10] A perspective view showing a semiconductor device of a fourth modified embodiment. [Modes for carrying out the invention]

[0007] The semiconductor device of the embodiment will be described below with reference to the drawings.

[0008] The direction in which the Z-axis extends in each drawing is the thickness direction of the substrate. The side in which the Z-axis arrow points (+Z side) is the back side of the semiconductor device. The side opposite to the side in which the Z-axis arrow points (-Z side) is the front side of the semiconductor device. In the following explanation, the back side of the semiconductor device will be referred to as the "back side" or "one side in the thickness direction," the front side of the semiconductor device will be referred to as the "front side" or "the other side in the thickness direction," and the thickness direction of the substrate will simply be referred to as the "thickness direction."

[0009] The first direction D1 shown in each drawing is the direction perpendicular to the plate thickness direction. In the following explanation, the side in which the arrow of the first direction D1 points (+D1 side) will be referred to as "one side of the first direction D1," and the side opposite to the side in which the arrow of the first direction D1 points (-D1 side) will be referred to as "the other side of the first direction D1."

[0010] The second direction D2 shown in each drawing is perpendicular to both the plate thickness direction and the first direction D1. In the following explanation, the side to which the arrow of the second direction D2 points (+D2 side) will be referred to as "one side of the second direction D2," and the side opposite to the side to which the arrow of the second direction D2 points (-D2 side) will be referred to as "the other side of the second direction D2."

[0011] (Embodiment) Figure 1 is a cross-sectional view showing the semiconductor device 10 of this embodiment. Figure 2 is a perspective view showing the semiconductor device 10 of this embodiment. Figure 3 is a perspective view showing a part of the semiconductor device 10 of this embodiment. The semiconductor device 10 of this embodiment is, for example, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), and a photorelay. The semiconductor device 10 comprises a substrate portion 20, a chip 31, a bonding layer 33, wires 35, and a sealing portion 37.

[0012] The substrate portion 20 is the back side (+Z side) of the semiconductor device 10. The substrate portion 20 is electrically connected to an external power supply (not shown). The substrate portion 20 supplies power from the external power supply to the chip 31. The substrate portion 20 also outputs the power converted by the chip 31 to equipment such as a motor. The substrate portion 20 has a substrate 21, electrodes 23, a surface coating portion 26, a wiring portion 28, and a side coating portion 29. In other words, the semiconductor device 10 comprises a substrate 21, electrodes 23, and a side coating portion 29.

[0013] The substrate 21 is plate-shaped, extending in a direction perpendicular to the thickness direction. As shown in Figure 2, viewed from the thickness direction, the substrate 21 is substantially rectangular in shape, with its longer side extending in the second direction D2. The substrate 21 is insulating. The substrate 21 is a printed circuit board. In this embodiment, the comparative tracking index (CTI) of the materials constituting the substrate 21 is approximately 300. As shown in Figure 1, the substrate 21 has a first surface 21a and a second surface 21c. As shown in Figure 2, the substrate 21 has a side surface 21e.

[0014] The comparative tracking index of each component of the semiconductor device 10 in this embodiment is measured based on the tracking resistance test method (IEC60112) specified by the International Electrotechnical Commission. The comparative tracking index is an indicator of how unlikely an insulator is to track. By using a material with a high comparative tracking index, the creepage distance between the electrodes 23, which is necessary to avoid tracking, can be shortened.

[0015] As shown in FIG. 1, the first surface 21a is a surface facing the back side of the outer surface of the substrate 21, that is, one side (+Z side) in the plate thickness direction. The second surface 21c is a surface facing the front side of the outer surface of the substrate 21, that is, the other side (-Z side) in the plate thickness direction. As shown in FIG. 2, the side surface 21e is a surface facing a direction orthogonal to the plate thickness direction among the outer surfaces of the substrate 21. The side surface 21e intersects each of the first surface 21a and the second surface 21c. In the present embodiment, the side surface 21e is orthogonal to each of the first surface 21a and the second surface 21c. The side surface 21e includes a first side surface 21f, a second side surface 21g, a third side surface 21h, and a fourth side surface 21j. In the present embodiment, a recess 22 is provided on the side surface 21e.

[0016] The first side surface 21f is a surface facing one side (+D2 side) in the second direction D2. The second side surface 21g is a surface facing the other side (-D2 side) in the second direction D2. The third side surface 21h is a surface facing one side (+D1 side) in the first direction D1. The fourth side surface 21j is a surface facing the other side (-D1 side) in the first direction D1.

[0017] The recess 22 is a depression that depresses in a direction orthogonal to the plate thickness direction. In the present embodiment, the recess 22 is provided on the first side surface 21f. The recess 22 depresses from the first side surface 21f to the other side (-D2 side) in the second direction D2. The recess 22 may be provided on any of the second side surface 21g, the third side surface 21h, and the fourth side surface 21j. In the present embodiment, the recess 22 is open on both the back side, that is, one side (+Z side) in the plate thickness direction and the front side, that is, the other side (-Z side) in the plate thickness direction. The recess 22 may not be open on the front side. In this case, the recess 22 is open only on the back side. When viewed from the second direction D2, the recess 22 is substantially rectangular. Note that the recess 22 may not be provided on the side surface 21e.

[0018] The electrode 23 is plate-shaped and extends in a direction orthogonal to the plate thickness direction. When viewed from the plate thickness direction, the electrode 23 is substantially rectangular with its long side extending in the second direction D2. The electrode 23 is formed on the first surface 21a of the substrate 21. In the present embodiment, the substrate portion 20 has a plurality of electrodes 23. In the present embodiment, the substrate portion 20 has four electrodes 23. The plurality of electrodes 23 includes a first electrode 23a, a second electrode 23b, a third electrode 23c, and a fourth electrode 23d.

[0019] According to the present embodiment, as described above, each of the plurality of electrodes 23 is plate-shaped and extends in a direction orthogonal to the plate thickness direction. Therefore, it is easy to reduce the dimension of each electrode 23 in the plate thickness direction. Thereby, the dimension of the semiconductor device 10 in the plate thickness direction can be reduced. Accordingly, miniaturization of the semiconductor device 10 can be achieved.

[0020] The first electrode 23a and the second electrode 23b are arranged side by side along the edge on one side (+D2 side) of the first surface 21a in the second direction D2. The first electrode 23a and the second electrode 23b are arranged side by side with a gap in the first direction D1. The first electrode 23a is arranged on the other side (-D1 side) of the first direction D1 with respect to the second electrode 23b. When viewed from the plate thickness direction, the end on one side of the first electrode 23a and the second electrode 23b in the second direction D2 overlaps with the edge on one side of the first surface 21a in the second direction D2. The first electrode 23a is located on the other side of the first direction D1 with respect to the concave portion 22. In the present embodiment, when viewed from the plate thickness direction, the end on the other side of the concave portion 22 in the first direction D1 overlaps with the end on one side of the first electrode 23a in the first direction D1. The second electrode 23b is located on one side of the first direction D1 with respect to the concave portion 22. When viewed from the plate thickness direction, the end on one side of the concave portion 22 in the first direction D1 overlaps with the end on the other side of the second electrode 23b in the first direction D1.

[0021] The third electrode 23c is arranged on the other side (-D2 side) of the second direction D2 with respect to the first electrode 23a. When viewed from the second direction D2, the third electrode 23c overlaps with the first electrode 23a. When viewed from the plate thickness direction, the edge on the other side of the third electrode 23c in the second direction D2 overlaps with the edge on the other side of the first surface 21a in the second direction D2.

[0022] The fourth electrode 23d is positioned on the other side (-D2 side) of the second direction D2 than the second electrode 23b. Viewed from the second direction D2, the fourth electrode 23d overlaps with the second electrode 23b. Viewed from the plate thickness direction, the other edge of the fourth electrode 23d in the second direction D2 overlaps with the other edge of the first surface 21a in the second direction D2. The third electrode 23c and the fourth electrode 23d are positioned side by side along the other edge of the first surface 21a in the second direction D2. The third electrode 23c and the fourth electrode 23d are positioned side by side with a gap between them in the first direction D1.

[0023] The first electrode 23a and the third electrode 23c are arranged side by side along the edge of the first surface 21a on the other side (-D1 side) of the first direction D1. The first electrode 23a and the third electrode 23c are arranged side by side with a gap between them in the second direction D2. The second electrode 23b and the fourth electrode 23d are arranged side by side along the edge of the first surface 21a on one side (+D1 side) of the first direction D1. The second electrode 23b and the fourth electrode 23d are arranged side by side with a gap between them in the second direction D2.

[0024] The plurality of electrodes 23 include an electrode pair 24, which consists of a pair of electrodes 23 arranged side by side along the edge of the first surface 21a. In this embodiment, the plurality of electrodes 23 includes four electrode pairs 24. That is, the plurality of electrodes 23 includes one or more electrode pairs 24. The number of electrode pairs 24 included in the plurality of electrodes 23 may be three or fewer, or five or more. The plurality of electrode pairs 24 include a first electrode pair 24a, a second electrode pair 24b, a third electrode pair 24c, and a fourth electrode pair 24d.

[0025] The first electrode pair 24a is composed of the first electrode 23a and the second electrode 23b. The second electrode pair 24b is composed of the third electrode 23c and the fourth electrode 23d. The third electrode pair 24c is composed of the first electrode 23a and the third electrode 23c. The fourth electrode pair 24d is composed of the second electrode 23b and the fourth electrode 23d.

[0026] The surface coating portion 26 covers the portion of the first surface 21a of the substrate 21 where multiple electrodes 23 are not formed when viewed from the thickness direction. That is, the portion of the first surface 21a where multiple electrodes 23 are not formed when viewed from the thickness direction is covered by the surface coating portion 26. Note that the surface coating portion 26 only needs to cover a part of the portion of the first surface 21a of the substrate 21 where multiple electrodes 23 are not formed when viewed from the thickness direction. The surface coating portion 26 is in the form of a film that covers the first surface 21a. The surface coating portion 26 protects wiring (not shown) provided on the first surface 21a. In this embodiment, the surface coating portion 26 is made of, for example, solder resist. The comparative tracking index of the material constituting the surface coating portion 26, i.e., the material constituting the solder resist, is 600 or more. The comparative tracking index of the material constituting the surface coating portion 26 is greater than the comparative tracking index of the material constituting the substrate 21. This makes it possible to shorten the creepage distance between a pair of electrodes 23 in each electrode pair 24, specifically the creepage distance that follows the first surface 21a of the substrate 21.

[0027] As shown in Figure 1, the wiring section 28 is a circuit pattern provided on the second surface 21c of the substrate 21. The wiring section 28 is made of metal. In this embodiment, the wiring section 28 is made of copper. The wiring section 28 is electrically connected to each electrode 23 by through holes (not shown) provided in the substrate 21.

[0028] The chip 31 is mounted on the second surface 21c of the substrate 21. More specifically, the chip 31 is fixed to the second surface 21c by a bonding layer 33. The bonding layer 33 is composed of solder and a sintered material such as silver. In this embodiment, the bonding layer 33 is solder. The chip 31 includes, for example, a power element for power control. The chip 31 is composed of, for example, a semiconductor material such as silicon, silicon carbide, and gallium nitride. The chip 31 is provided with a plurality of terminal portions 31a.

[0029] Each of the multiple terminal portions 31a is provided on the surface of the chip 31 facing the front side (-Z side). Each terminal portion 31a is made of metal. In this embodiment, each terminal portion 31a is made of aluminum.

[0030] The wire 35 electrically connects the terminal portion 31a and the wiring portion 28. The wire 35 is made of a metal such as aluminum and copper. In this embodiment, the wire 35 is made of aluminum. The semiconductor device 10 includes a plurality of wires 35. One end of each wire 35 is joined to different terminal portions 31a. The other end of each wire 35 is joined to the wiring portion 28. In this way, each wire 35 electrically connects the chip 31 and the wiring portion 28.

[0031] The sealing portion 37 covers the second surface 21c of the substrate 21, the wiring portion 28, the chip 31, and each of the wires 35. As shown in Figure 2, the sealing portion 37 is a substantially rectangular parallelepiped that protrudes in the thickness direction. Viewed from the thickness direction, the sealing portion 37 is a substantially rectangular shape with its long side extending in the second direction D2. The sealing portion 37 is made of an insulating resin. The sealing portion 37 is made of a resin mainly containing, for example, epoxy resin, bismaleimide resin, or cyanate resin. In this embodiment, the sealing portion 37 is made of epoxy resin. The sealing portion 37 protects the wiring portion 28, the chip 31, and each of the wires 35. Therefore, according to this embodiment, the sealing portion 37 can improve the stability of the operation of the semiconductor device 10.

[0032] As shown in Figure 2, the side covering portion 29 is positioned between the first electrode 23a and the second electrode 23b constituting the first electrode pair 24a in the first direction D1. In this embodiment, the side covering portion 29 is positioned inside the recess 22. The back side (+Z side) end of the side covering portion 29 is connected to the portion of the surface covering portion 26 between the first electrode pair 24a. That is, the side covering portion 29 is connected to the portion of the surface covering portion 26 between at least one electrode pair 24. The front side (-Z side) end of the side covering portion 29 is connected to the sealing portion 37. In this embodiment, the side covering portion 29 is part of the sealing portion 37. In this embodiment, the side covering portion 29 is made of epoxy resin. The side covering portion 29 may be made of bismaleimide resin or other resins such as cyanate resin. The comparative tracking index of the materials constituting the side covering portion 29 is 600 or higher. The comparative tracking index of the material constituting the side covering portion 29 is greater than that of the material constituting the substrate 21. As a result, compared to a configuration in which the side covering portion 29 is not placed in the recess 22, the creepage distance between the pair of electrodes 23 in the first electrode pair 24a, with the first side surface 21f as the path, can be shortened.

[0033] Although not shown in the diagram, if the recess 22 is not open to the surface side (-Z side), the side covering portion 29 does not need to be connected to the sealing portion 37. In this case, the side covering portion 29 and the sealing portion 37 are separate components.

[0034] Although not shown in the diagram, if the recess 22 is not provided on the first side surface 21f, the side covering portion 29 is provided on the first side surface 21f. In this case as well, the back side (+Z side) end of the side covering portion 29 is connected to the portion of the surface covering portion 26 between the first electrode pair 24a. Therefore, in the first electrode pair 24a, the creepage distance between the pair of electrodes 23 that passes through the first side surface 21f can be shortened. The front side (-Z side) end of the side covering portion 29 may or may not be connected to the sealing portion 37. That is, the side covering portion 29 may be a part of the sealing portion 37, or it may be a separate component from the sealing portion 37.

[0035] According to this embodiment, the side surface 21e is provided with a recess 22 that is recessed in a direction perpendicular to the thickness direction and opens to the back side, i.e., one side in the thickness direction (+Z side), and the side covering portion 29 is arranged inside the recess 22. Therefore, compared to the case where the recess 22 is not provided on the side surface 21e and the side covering portion 29 is provided on the first side surface 21f, it is possible to suppress an increase in the dimension of the semiconductor device 10 in the second direction D2. Thus, miniaturization of the semiconductor device 10 can be more favorably achieved.

[0036] When forming a component to which a voltage is applied, such as multiple electrodes 23, on a substrate 21, the distance between a pair of electrodes 23 constituting an electrode pair 24 must be wider than the creepage distance required to avoid tracking-related problems. The creepage distance in each electrode pair 24 is determined by the potential difference, which is the difference in potential applied to each of the pair of electrodes 23, and the comparative tracking index of the substrate 21 surface between the pair of electrodes 23. In the first electrode pair 24a shown in Figure 3, the paths where tracking may occur include a first path R1 that follows the first surface 21a of the substrate 21, and a second path R2 that follows the first side surface 21f of the substrate 21. As described above, the surface coating portion 26 covers the first surface 21a. Furthermore, the comparative tracking index of the material constituting the surface coating portion 26 is greater than the comparative tracking index of the material constituting the substrate 21. Therefore, in this embodiment, the first creepage distance in the first path R1 that follows the first surface 21a of the substrate 21 can be shortened.

[0037] Many solder resists constituting the surface coating portion 26 are made of materials with a large comparative tracking index and are widely available. In contrast, many substrates 21 are made of materials with a comparative tracking index smaller than that of the solder resist. Therefore, in the case of using a substrate 21 with a small comparative tracking index, as in this embodiment, when multiple electrodes 23 are formed along the edge of the substrate 21, the second creepage distance in the second path R2, which follows the side surface 21e of the substrate 21, tends to be longer than the first creepage distance. In contrast, in this embodiment, as described above, the comparative tracking index of the material constituting the side coating portion 29 is larger than that of the material constituting the substrate 21. Furthermore, the side coating portion 29 is connected to the portion of the surface coating portion 26 between the first electrode pair 24a. Therefore, in this embodiment, the side coating portion 29 can shorten the second creepage distance in the second path R2. As described above, in this embodiment, the first creepage distance in the first path R1 can be shortened. As a result, in this embodiment, the distance between the first electrode 23a and the second electrode 23b that constitute the first electrode pair 24a can be narrowed.

[0038] In this embodiment, the potential difference between the pairs of electrodes 23 constituting the second electrode pair 24b, the third electrode pair 24c, and the fourth electrode pair 24d is smaller than the potential difference between the pairs of electrodes 23 constituting the first electrode pair 24a. Therefore, in this embodiment, even without providing side covering portions 29 on the second side surface 21g, the third side surface 21h, and the fourth side surface 21j of the substrate 21, the creepage distance between the pairs of electrodes 23 constituting the second electrode pair 24b, the third electrode pair 24c, and the fourth electrode pair 24d can be secured. If the potential difference between the second electrode pair 24b, the third electrode pair 24c, and the fourth electrode pair 24d is large, the second creepage distance in the second path using the side surface 21e of the substrate 21 can be shortened by appropriately providing side covering portions on the second side surface 21g, the third side surface 21h, and the fourth side surface 21j. This prevents the spacing between the pairs of electrodes 23 from widening.

[0039] Figure 4 is a first plan view showing the manufacturing process of the semiconductor device 10 of this embodiment. Figure 5 is a second plan view showing the manufacturing process of the semiconductor device 10 of this embodiment. Figure 6 is a third plan view showing the manufacturing process of the semiconductor device 10 of this embodiment. Next, the manufacturing process of the semiconductor device 10 of this embodiment will be described. The manufacturing process of the semiconductor device 10 includes a drilling process P01, a sealing part formation process P02, and a piece formation process P03. In the following description, "workers, etc." includes workers and assembly equipment, etc., who perform the work in each process. The work in each process may be performed by workers alone, by assembly equipment alone, or by workers and assembly equipment together.

[0040] The drilling process P01 is a process of drilling through holes 1022 in the base substrate 1021. In this embodiment, the base substrate 1021 shown in Figure 4 is a substrate made up of six connected substrates 21, and the area of ​​the base substrate 1021 is approximately six times the area of ​​the substrates 21. The base substrate 1021 may be a substrate made up of five or fewer connected substrates 21, or a substrate made up of seven or more connected substrates 21. Viewed from the thickness direction, the base substrate 1021 is substantially rectangular in shape with its long side extending in the first direction D1. Although not shown in the figure, after mounting a plurality of chips 31 on the second surface of the base substrate 1021, the worker connects the wires 35 to the terminal portion 31a and wiring portion 28 of each chip 31. Next, the worker forms a plurality of electrodes 23, 1023 on the first surface 1021a of the base substrate 1021. At the edge of the base substrate 1021 on one side (+D2 side) of the second direction D2 and at the edge of the base substrate 1021 on the other side (-D2 side) of the second direction D2, the dimensions of each electrode 23 formed in the same direction as the electrode 23 of the semiconductor device 10 are the same as the dimensions of the electrode 23 of the semiconductor device 10. At the central part of the base substrate 1021 in the second direction D2, the dimensions of each electrode 1023 formed in the same direction as the electrode 23 in the first direction D1 are the same as the dimensions of electrode 23 in the first direction D1, and the dimensions of each electrode 1023 in the second direction D2 are approximately twice the dimensions of electrode 23 in the second direction D2.

[0041] Next, the worker applies the surface coating 1026 to the portion of the first surface 1021a where the multiple electrodes 23, 1023 are not formed when viewed from the thickness direction. As a result, the portion of the first surface 1021a where the multiple electrodes 23, 1023 are not formed when viewed from the thickness direction is covered by the surface coating 1026. Next, the worker drills through holes 1022 between the pair of electrodes 1023. The through holes 1022 are holes that penetrate the base substrate 1021 in the thickness direction. When viewed from the thickness direction, the through holes 1022 are substantially rectangular in shape with their long side extending in the second direction D2. The through holes 1022 are open on both sides of the base substrate 1021, i.e., one side in the thickness direction (+Z side) and the front side, i.e., the other side in the thickness direction (-Z side). In this embodiment, the worker drills three through holes 1022. Once the worker has drilled each through-hole 1022, the drilling process P01 is completed.

[0042] The sealing portion formation step P02 is a step in which the sealing portion 37 (see Figure 1) and the side covering portion 1029 are formed. Although not shown in the illustration, the worker fills the base substrate 1021 with epoxy resin from the surface side (-Z side). As a result, each of the multiple chips 31 and wires 35 mounted on the second surface of the base substrate 1021 is covered by the sealing portion 37 (see Figure 1). Also, as described above, the through holes 1022 are open to the surface side of the base substrate 1021. Therefore, as shown in Figure 5, a portion of the epoxy resin flows into the interior of each through hole 1022, and the side covering portion 1029 fills the interior of each through hole 1022. As a result, although not shown in the illustration, the surface end of the side covering portion 1029 is connected to the sealing portion 37. In other words, the side covering portion 1029 is connected to the sealing portion 37. Next, the workers heat the sealing portion 37 and the side covering portion 1029 in a heating furnace or the like to harden them. Once the workers have hardened the sealing portion 37 and the side covering portion 1029, the sealing portion formation process P02 is completed.

[0043] The individualization step P03 is a process of dividing the base substrate 1021 into multiple semiconductor devices 10. As shown in Figure 6, the worker divides the base substrate 1021 into six semiconductor devices 10 by cutting each electrode 1023, each through hole 1022, and each side covering portion 1029. The worker cuts the base substrate 1021 etc. using a dicing device (not shown) having a blade. The worker may also cut the base substrate 1021 etc. using other devices such as a laser dicing device. Each cut electrode 1023 constitutes the first electrode 23a and the second electrode 23b in each semiconductor device 10. Each cut through hole 1022 constitutes the recess 22 in each semiconductor device 10. Each cut side covering portion 1029 constitutes the side covering portion 29 in each semiconductor device 10. The individualization step P03 is completed when the worker has divided each semiconductor device 10 into individual pieces. Once the individualization process P03 is completed, the manufacturing process for the semiconductor device 10 is finished.

[0044] Although not shown in the diagram, as described above, if the recess 22 is not open to the surface side (-Z side), the side covering portion 29 and the sealing portion 37 are separate components. In this case, after the individualization process P03 is completed, the worker can fill the inside of each recess 22 with the side covering portion 29 to form the side covering portion 29 inside each recess 22.

[0045] According to this embodiment, the semiconductor device 10 includes a sealing portion 37 that covers the second surface 21c of the substrate 21, that is, the other side (-Z side) in the thickness direction, the recess 22 is open to the surface side, and the side covering portion 29 is connected to the sealing portion 37. Therefore, as described above, in the sealing portion formation step P02, when filling the second surface of the base substrate 1021 with the resin constituting the sealing portion 37, the side covering portion 1029 can be filled into the interior of each through hole 1022. In other words, in the sealing portion formation step P02, the sealing portion 37 and the side covering portion 29 can each be formed by the same filling operation. Therefore, compared to the case in which the sealing portion 37 and the side covering portion 29 are formed by different filling operations, an increase in the manufacturing man-hours of the semiconductor device 10 can be suppressed.

[0046] According to this embodiment, the semiconductor device 10 comprises an insulating substrate 21, a plurality of electrodes 23 formed on the back side of the substrate 21, i.e., a first surface 21a facing one side (+Z side) in the thickness direction, and a side covering portion 29 that covers at least a portion of the side surface 21e of the outer surface of the substrate 21 that intersects with the first surface 21a. The portion of the first surface 21a on which the plurality of electrodes 23 are not formed when viewed from the thickness direction is covered by a surface covering portion 26, and the plurality of electrodes 23 include one or more electrode pairs 24, each consisting of a pair of electrodes 23 arranged side by side along the edge of the first surface 21a, and the side covering portion 29 is connected to the portion of the surface covering portion 26 between at least one electrode pair 24. The comparative tracking index of the material constituting the surface covering portion 26 and the material constituting the side covering portion 29 is greater than the comparative tracking index of the material constituting the substrate 21. Therefore, in the direction in which the pair of electrodes 23a and 23b constituting the electrode pair 24 are arranged side by side, in the first direction D1 in this embodiment, the side covering portion 29 is positioned between the pair of electrodes 23a and 23b, and the end on the back side of the side covering portion 29 is connected to the surface covering portion 26. As a result, compared to the case in which the side covering portion 29 is not provided on the first side surface 21f as described above, the second creepage distance in the second path R2 that uses the first side surface 21f of the substrate 21 as its path can be shortened. Consequently, the distance between the pair of electrodes 23a and 23b constituting the electrode pair 24 can be narrowed, making it possible to more favorably miniaturize the semiconductor device 10.

[0047] Furthermore, in this embodiment, as described above, the side covering portion 29 can shorten the second creepage distance between the pair of electrodes 23a and 23b, thereby suppressing the determination of the spacing between the pair of electrodes 23a and 23b based on the comparative tracking index of the materials constituting the substrate 21. This suppresses the limitation of the choice of materials constituting the substrate 21, making it easier to reduce the manufacturing cost of the substrate 21. Consequently, it is possible to suppress an increase in the manufacturing cost of the semiconductor device 10.

[0048] Furthermore, in this embodiment, as described above, the portion of the first surface 21a where no electrodes 23 are formed when viewed from the thickness direction is covered by the surface coating portion 26. This makes it possible to shorten the first creepage distance in the first path R1 that uses the first surface 21a of the substrate 21 as its path, among the creepage distances between the pair of electrodes 23a and 23b. Therefore, the distance between the pair of electrodes 23a and 23b can be more preferably narrowed, and thus the semiconductor device 10 can be more preferably miniaturized.

[0049] (First variation) Figure 7 is a perspective view showing a part of the semiconductor device 110 of this modified example. In the semiconductor device 110 of this modified example, the dimension of the recess 122 in the first direction D1 and the dimension of the side covering portion 129 in the first direction D1 are each smaller than the distance between the first electrode 23a and the second electrode 23b in the first direction D1. In the following description, components that are the same as those in the above-described embodiment are denoted by the same reference numerals, and their descriptions are omitted.

[0050] As shown in Figure 7, the recess 122 in this modified example is a recess that is recessed in a direction perpendicular to the plate thickness direction. The recess 122 is recessed from the first side surface 21f to the other side (-D2 side) of the second direction D2. In this modified example, the recess 122 is open on both the back side (+Z side) and the front side (-Z side). As described above, in this modified example, the dimension of the recess 122 in the first direction D1 is smaller than the distance in the first direction D1 between the first electrode 23a and the second electrode 23b. In this modified example, the end of the recess 122 on the other side (-D1 side) of the first direction D1 is located on one side (+D1 side) of the first direction D1 than the first electrode 23a. The end of the recess 122 on one side of the first direction D1 is located on the other side of the first direction D1 than the second electrode 23b. The other configurations of the substrate 121 in the substrate portion 120 of this modified example are the same as the other configurations of the substrate 21 in the substrate portion 20 of the embodiment described above.

[0051] The side covering portion 129 is positioned between the first electrode 23a and the second electrode 23b constituting the first electrode pair 24a in the first direction D1. The side covering portion 129 is positioned inside the recess 122. The back side (+Z side) end of the side covering portion 129 is connected to the portion of the surface covering portion 26 between the first electrode pair 24a. That is, the side covering portion 129 is connected to the portion of the surface covering portion 26 between at least one electrode pair 24. The front side (-Z side) end of the side covering portion 129 is connected to the sealing portion 37. The comparative tracking index of the material constituting the side covering portion 129 is greater than the comparative tracking index of the material constituting the substrate 121. Other configurations of the side covering portion 129 in this modified example are the same as other configurations of the side covering portion 29 in the above-described embodiment. Other configurations of the semiconductor device 110 in this modified example are the same as other configurations of the semiconductor device 10 in the above-described embodiment.

[0052] According to this modified example, the side covering portion 129 is connected to the portion between at least one electrode pair 24 of the surface covering portion 26, and the comparative tracking index of the material constituting the surface covering portion 26 and the material constituting the side covering portion 129 is greater than the comparative tracking index of the material constituting the substrate 121. Therefore, as in the above embodiment, compared to the case where the side covering portion 129 is not provided on the first side surface 21f, the second creepage distance in the second path R2 that uses the first side surface 21f of the substrate 121 as a path can be shortened among the creepage distance between the pair of electrodes 23a and 23b. Consequently, the distance between the pair of electrodes 23a and 23b constituting the electrode pair 24 can be narrowed, making it possible to more favorably miniaturize the semiconductor device 110.

[0053] Furthermore, in this modified example, as described above, the dimension of the recess 122 in the first direction D1 is smaller than the distance between the first electrode 23a and the second electrode 23b in the first direction D1. Therefore, in the drilling process P01, the dimensions of each through hole 1022 formed in the base substrate 1021 can be reduced. This suppresses an increase in the number of work steps required to drill the base substrate 1021, thereby reducing the manufacturing cost of the substrate 121. Consequently, an increase in the manufacturing cost of the semiconductor device 110 can be suppressed.

[0054] Furthermore, in this modified example, as described above, the dimension of the side covering portion 129 in the first direction D1 is smaller than the distance between the first electrode 23a and the second electrode 23b in the first direction D1. This makes it easier to reduce the volume of the side covering portion 129, thereby reducing the manufacturing cost of the side covering portion 129. Consequently, an increase in the manufacturing cost of the semiconductor device 110 can be more effectively suppressed.

[0055] (Second variation) Figure 8 is a perspective view showing a part of the semiconductor device 210 of this modified example. In the semiconductor device 210 of this modified example, the recess 222 is not open to the surface side (-Z side). That is, the dimension of the recess 222 in the thickness direction is smaller than the dimension of the substrate 221 in the thickness direction. In the following description, components that are the same as those in the above-described embodiment are denoted by the same reference numerals, and their descriptions are omitted.

[0056] As shown in Figure 8, the recess 222 in this modified example is a recess that is recessed in a direction perpendicular to the plate thickness direction. The recess 222 is recessed from the first side surface 21f to the other side (-D2 side) of the second direction D2. In this modified example, the recess 222 is open only to the back side (+Z side) and not to the front side (-Z side). The other configurations of the substrate 221 in the substrate portion 220 of this modified example are the same as the other configurations of the substrate 21 in the substrate portion 20 of the above-described embodiment.

[0057] In this modified example, the side covering portion 229 is positioned between the first electrode 23a and the second electrode 23b constituting the first electrode pair 24a in the first direction D1. The side covering portion 229 is positioned inside the recess 222. The back side (+Z side) end of the side covering portion 229 connects to the portion of the surface covering portion 26 between the first electrode pair 24a. That is, the side covering portion 229 connects to the portion of the surface covering portion 26 between at least one electrode pair 24. The front side (-Z side) end of the side covering portion 229 does not connect to the sealing portion 37. In this modified example, the front side end of the side covering portion 229 is located on the front side of the first surface 21a and on the back side of the second surface 21c. The thickness dimension of the side covering portion 229 is smaller than the thickness dimension of the substrate 221. The comparative tracking index of the material constituting the side covering portion 229 is greater than the comparative tracking index of the material constituting the substrate 221. The other configurations of the side covering portion 229 in this modified example are the same as the other configurations of the side covering portion 29 in the above-described embodiment. The other configurations of the semiconductor device 210 in this modified example are the same as the other configurations of the semiconductor device 10 in the above-described embodiment.

[0058] According to this modified example, the side covering portion 229 is connected to the portion of the surface covering portion 26 between at least one pair of electrodes 24, the surface-side (-Z side) end of the side covering portion 229 is located on the surface side of the first surface 21a and on the back side (+Z side) of the second surface 21c, and the comparative tracking index of the material constituting the surface covering portion 26 and the material constituting the side covering portion 229 is greater than the comparative tracking index of the material constituting the substrate 221. Therefore, of the creepage distance between the pair of electrodes 23a and 23b, the second path R2, which takes the first side surface 21f of the substrate 221 as its path, becomes a path that bypasses the side covering portion 229 on the surface side of the side covering portion 229, along the outer circumference of the side covering portion 229. As a result, the second path R2 can be made longer than the distance between the pair of electrodes 23a and 23b in the first direction D1 compared to the case where the side covering portion 229 is not provided on the first side surface 21f. This makes it easier to secure the creepage distance between the pair of electrodes 23a and 23b even when the distance between them in the first direction D1 is narrowed, thus enabling miniaturization of the semiconductor device 210.

[0059] Furthermore, in this modified example, as described above, the recess 222 is not open to the surface side (-Z side). Therefore, as described above, the dimension of the recess 222 in the thickness direction is smaller than the dimension of the substrate 221 in the thickness direction. As a result, in the drilling process P01, the dimension of each through hole 1022 formed in the base substrate 1021 in the thickness direction can be reduced. This suppresses an increase in the number of work steps required to drill the base substrate 1021, and thus reduces the manufacturing cost of the substrate 221. Consequently, an increase in the manufacturing cost of the semiconductor device 210 can be suppressed.

[0060] Furthermore, in this modified example, as described above, the dimension of the side covering portion 229 in the thickness direction is smaller than the dimension of the substrate 221 in the thickness direction. This makes it easier to reduce the volume of the side covering portion 229, thereby reducing the manufacturing cost of the side covering portion 229. Consequently, an increase in the manufacturing cost of the semiconductor device 210 can be more effectively suppressed.

[0061] (Third variation) Figure 9 is a perspective view showing the semiconductor device 310 of this modified example. The semiconductor device 310 of this modified example includes a plurality of side covering portions 29,329a. In the following description, components that are identical in appearance to those of the above-described embodiment are denoted by the same reference numerals, and their descriptions are omitted.

[0062] As shown in Figure 9, in this modified example, a plurality of recesses 22,322a are provided on the side surface 21e. The configuration of the recesses 22 in this modified example is the same as that of the recesses 22 in the embodiment described above.

[0063] The recess 322a is a recess that is recessed in a direction perpendicular to the thickness direction of the plate. The recess 322a is recessed from the third side surface 21h to the other side (-D1 side) of the first direction D1. Viewed from the first direction D1, the recess 322a is substantially rectangular in shape with its longer side extending in the second direction D2. In this modified example, the recess 322a is open on both the back side (+Z side) and the front side (-Z side). In the second direction D2, the recess 322a is located between the second electrode 23b and the fourth electrode 23d. That is, the recess 322a is located on the other side (-D2 side) of the second direction D2 than the second electrode 23b, and on one side (+D2 side) of the second direction D2 than the fourth electrode 23d. One end of the recess 322a in the second direction D2 may be located on one side of the second direction D2 than the other end of the second electrode 23b in the second direction D2 (-D2 side). The other end of the recess 322a in the second direction D2 may be located on the other side of the second direction D2 than the one end of the fourth electrode 23d in the second direction D2. The other configurations of the substrate 321 in the substrate portion 320 of this modified example are the same as the other configurations of the substrate 21 in the substrate portion 20 of the above-described embodiment.

[0064] In this modified example, the semiconductor device 310 includes a plurality of side covering portions 29,329a. The semiconductor device 310 includes two side covering portions 29,329a. The configuration of the side covering portion 29 in this modified example is the same as the configuration of the side covering portion 29 in the above-described embodiment.

[0065] The side covering portion 329a is positioned inside the recess 322a. In the second direction D2, the side covering portion 329a is positioned between the second electrode 23b and the fourth electrode 23d that constitute the fourth electrode pair 24d. The back side (+Z side) end of the side covering portion 329a is connected to the portion of the surface covering portion 26 between the fourth electrode pair 24d. That is, the side covering portion 329a is connected to the portion of the surface covering portion 26 between at least one electrode pair 24. As a result, each of the multiple side covering portions 29,329a is connected to a portion of the surface covering portion 26 between different electrode pairs 24. In this modified example, the front side (-Z side) end of the side covering portion 329a is connected to the sealing portion 37. The side covering portion 329a is part of the sealing portion 37. The comparative tracking index of the materials constituting each side covering portion 29,329a is greater than the comparative tracking index of the materials constituting the substrate 321. The other configurations of each side covering portion 29, 329a in this modified example are the same as the other configurations of the side covering portion 29 in the above-described embodiment. The other configurations of the semiconductor device 310 in this modified example are the same as the other configurations of the semiconductor device 10 in the above-described embodiment.

[0066] In this modified example, the potential difference between the pairs of electrodes 23 constituting the first electrode pair 24a and the fourth electrode pair 24d is greater than the potential difference between the pairs of electrodes 23 constituting the second electrode pair 24b and the third electrode pair 24c. Therefore, in this modified example, by providing a side covering portion 29 on the first side surface 21f of the substrate 321, the second creepage distance in the second path R2, which uses the first side surface 21f of the substrate 321 as its path, can be shortened, similar to the embodiment described above. Furthermore, in this modified example, by providing a side covering portion 329a on the third side surface 21h of the substrate 321, the second creepage distance in the second path R302, which uses the third side surface 21h of the substrate 321 as its path, can be shortened. As a result, the distance between the pairs of electrodes 23a and 23b and the distance between the pairs of electrodes 23b and 23d can be narrowed.

[0067] According to this modified example, the semiconductor device 310 has a plurality of side covering portions 29,329a, and the plurality of electrodes 23 include a plurality of electrode pairs 24, and each of the plurality of side covering portions 29,329a is connected to the portion of the surface covering portion 26 between different electrode pairs 24. Therefore, as described above, even if the spacing between a pair of electrodes 23a,23b and the spacing between a pair of electrodes 23b,23d are narrowed, the creepage distance between a pair of electrodes 23a,23b and the creepage distance between a pair of electrodes 23b,23d can be secured, thus enabling miniaturization of the semiconductor device 310.

[0068] (Fourth variation) Figure 10 is a perspective view showing the semiconductor device 410 of this modified example. In the semiconductor device 410 of this modified example, a solder ball 440 is mounted on each of the multiple electrodes 23. In the following description, components that are the same as those in the above-described embodiment are denoted by the same reference numerals, and their descriptions are omitted.

[0069] As shown in Figure 10, in this modified example, a solder ball 440 is mounted on each of the multiple electrodes 23. Each solder ball 440 is conductive. In this embodiment, each solder ball 440 is made of a metallic material such as copper, silver, and tin. Each solder ball 440 is heated and melted together with an external terminal of an external power supply (not shown), thereby tightly fixing each electrode 23 to the external terminal via the solder ball 440. This stabilizes the electrical connection between each electrode 23 and the external terminal. Therefore, the stability of the operation of the semiconductor device 410 can be improved.

[0070] Furthermore, in this modified example, similar to the first embodiment described above, the side covering portion 29 is connected to the portion between at least one electrode pair 24 of the surface covering portion 26, and the comparative tracking index of the material constituting the surface covering portion 26 and the material constituting the side covering portion 29 is greater than the comparative tracking index of the material constituting the substrate 21. Therefore, the second creepage distance in the second path R2, which uses the first side surface 21f of the substrate 21 as its path, can be shortened among the creepage distances between the pair of electrodes 23a and 23b. Consequently, the distance between the pair of electrodes 23a and 23b constituting the electrode pair 24 can be narrowed, which allows for the miniaturization of the semiconductor device 10.

[0071] According to at least one embodiment described above, a semiconductor device can be provided that can be miniaturized by having a side covering portion that is connected to the portion between at least one electrode pair of the surface covering portion and whose comparative tracking index is greater than that of the material constituting the substrate.

[0072] The semiconductor device of the embodiment includes the following appended aspects. (Note 1) An insulating substrate, A plurality of electrodes are formed on the first surface of the substrate facing one side in the thickness direction, A side covering portion that covers at least a part of the side surface of the outer surface of the substrate that intersects with the first surface, Equipped with, The portion of the first surface in which no electrodes are formed when viewed from the thickness direction is covered by a surface coating. The plurality of electrodes include one or more electrode pairs, each consisting of a pair of electrodes arranged side by side along the edge of the first surface. The side covering portion is connected to the portion between at least one of the electrode pairs of the surface covering portion, The comparative tracking index of the material constituting the surface coating portion and the material constituting the side coating portion are greater than the comparative tracking index of the material constituting the substrate. Semiconductor equipment. (Note 2) The aforementioned side surface is provided with a recess that is recessed in a direction perpendicular to the thickness direction of the plate and is open to one side in the thickness direction of the plate. The side covering portion is located inside the recess. The semiconductor device described in Appendix 1. (Note 3) The substrate is provided with a sealing portion that covers the second surface facing the other side in the thickness direction, The recess is open to the other side in the thickness direction of the plate, The aforementioned side covering portion is connected to the aforementioned sealing portion. Semiconductor device as described in Appendix 2. (Note 4) Each of the multiple electrodes is plate-shaped and extends in a direction perpendicular to the plate thickness direction. A semiconductor device as described in any of Appendix 1 to Appendix 3. (Note 5) Each of the multiple electrodes has a solder ball mounted on it. A semiconductor device as described in any of the appendices 1 through 4. (Note 6) The site comprises multiple side covering portions, The plurality of electrodes include a plurality of electrode pairs, Each of the multiple side covering portions is connected to a portion of the surface covering portion between different pairs of electrodes. A semiconductor device as described in any of the appendices 1 to 5.

[0073] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims and their equivalents. [Explanation of Symbols]

[0074] 10, 110, 210, 310, 410… Semiconductor equipment, 21, 121, 221, 321… Substrate, 21a… First surface, 21e… Side surface, 22, 122, 222, 322a… Recess, 23… Electrode, 24… Electrode pair, 26… Surface coating portion, 29, 129, 229, 329a… Side coating portion, 37… Sealing portion, 440… Solder ball

Claims

1. An insulating substrate, A plurality of electrodes are formed on the first surface of the substrate facing one side in the thickness direction, A side covering portion that covers at least a part of the side surface of the outer surface of the substrate that intersects with the first surface, Equipped with, The portion of the first surface in which no electrodes are formed when viewed from the thickness direction of the plate is covered by a surface coating portion. The plurality of electrodes include one or more electrode pairs, each consisting of a pair of electrodes arranged side by side along the edge of the first surface. The side covering portion is connected to the portion between at least one of the electrode pairs of the surface covering portion, A semiconductor device wherein the comparative tracking index of the material constituting the surface coating portion and the material constituting the side coating portion is greater than the comparative tracking index of the material constituting the substrate.

2. The aforementioned side surface is provided with a recess that is recessed in a direction perpendicular to the thickness direction of the plate and is open to one side in the thickness direction of the plate. The semiconductor device according to claim 1, wherein the side covering portion is disposed inside the recess.

3. The substrate is provided with a sealing portion that covers the second surface facing the other side in the thickness direction, The recess is open to the other side in the thickness direction of the plate, The semiconductor device according to claim 2, wherein the side covering portion is connected to the sealing portion.

4. The semiconductor device according to claim 1, wherein each of the plurality of electrodes is plate-shaped and extends in a direction perpendicular to the plate thickness direction.

5. The semiconductor device according to claim 1, wherein a solder ball is mounted on each of the plurality of electrodes.

6. The site comprises multiple side covering portions, The plurality of electrodes include a plurality of electrode pairs, The semiconductor device according to any one of claims 1 to 5, wherein each of the plurality of side covering portions is connected to a portion of the surface covering portion between different pairs of electrodes.

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