Prevention of localized plasma arcs via purging.

Abstract

The present invention provides a semiconductor substrate processing equipment tool, which includes a purging ring and a process chamber that symmetrically distribute an inert gas around a wafer. [Solution] The purge ring 200 includes a supply port or purge inlet 420 for receiving gas. The outer channel 450 is connected to the supply port or purge inlet. The outlet network 460 is configured for the outlet flow of gas adjacent to the inner diameter of the purge ring. The purge ring includes a plurality of channels 490 for radially flowing gas from the outer channel to the outlet network. The purge ring includes a plurality of passages 430 for reducing the radial gas flow between the outer channel 450 and the outlet network 460. The plurality of channels 490 and the plurality of passages 430 provide uniform pressure for the outlet flow of gas over the entire circumference of the outlet network 460.

Description

Technical Field

[0001] This embodiment relates to semiconductor substrate processing equipment tools, and more particularly to a purge ring configured to symmetrically distribute an inert gas around a wafer.

Background Art

[0002] Improving film uniformity is important in plasma enhanced chemical vapor deposition (PECVD) technology and plasma atomic layer deposition (ALD) technology. Chamber systems for performing PECVD processes and ALD processes may introduce non-uniformities due to various causes. In particular, multi-station modules for performing PECVD and ALD are characterized by large open reactors that can contribute to azimuthal non-uniformities and edge drop effects. Non-uniformities also exist in single-station modules. For example, standard pedestal configurations do not provide the desired flow profile and / or material conditions near the edges of the wafer during plasma processing. In particular, standard pedestal configurations may generate charge with respect to the wafer edges during PECVD and / or ALD processes, which results in a probability of discharge or arcing from the wafer to the ceramic pedestal during processing, resulting in wafer non-uniformity and / or pedestal damage. As the die gets closer and closer to the wafer edge, the non-uniformity of the wafer at the edge has a significant adverse effect on, for example, yield. Despite best efforts to minimize pedestal damage and / or non-uniform deposition profiles, conventional PECVD and plasma ALD schemes still need improvement.

[0003] The background description provided herein is for the purpose of generally presenting the content of the present disclosure. Within the scope described in this background art section, the research by the inventors named at the present time, as well as aspects of the description that cannot be separately regarded as prior art at the time of filing, are not recognized as prior art against the present disclosure, whether explicitly or implicitly.

[0004] The embodiments of this disclosure arise in such circumstances. [Overview of the project]

[0005] This embodiment relates to solving one or more problems found in related technologies, and more specifically to carrying out a semiconductor process that includes locally diluting a plasma sheath around a wafer using a ceramic purge ring composed of a distribution network or secondary internal passage and / or plenum and a radial internal passage and / or plenum designed to deliver inert gas through the volume of the channel, thereby enabling symmetrical distribution of inert gas around the wafer by delivering the inert gas around the wafer at a precise and controlled mass flow rate. Some embodiments of the inventions of this disclosure are described below.

[0006] A deposition chamber (e.g., PECVD, ALD, etc.) includes one or more stations having a radio frequency (RF) source, a wafer, and a grounding surface facing the source. A purging ring is used to reduce and / or prevent the accumulation of excess charge at the wafer edge during the deposition process. In embodiments of this disclosure, a purging ring having a single gas input port reduces the charge on the wafer edge, thereby reducing the probability of discharge or arc discharge from the wafer to the ceramic base during the deposition process.

[0007] Embodiments of the present disclosure include a purge ring. The purge ring includes a supply port configured to receive gas. The purge ring includes an outer channel connected to the supply port. The purge ring includes an outlet network configured for gas outlet flow adjacent to the inner diameter of the purge ring. The purge ring includes a plurality of channels configured to allow gas to flow radially from the outer channel to the outlet network. The purge ring includes a plurality of passages configured to reduce the radial gas flow between the outer channel and the outlet network. The plurality of channels and passages are configured to provide uniform pressure and / or velocity of the gas outlet flow over the entire circumference of the outlet network.

[0008] Other embodiments of the present disclosure include a pedestal assembly of a process chamber for depositing a film. The pedestal assembly includes a pedestal for supporting a substrate and a purge ring configured to rest around the pedestal. The purge ring includes a pedestal for supporting the substrate. The purge ring includes a supply port configured to receive gas. The purge ring includes an outer channel connected to the supply port. The purge ring includes an outlet network configured for gas outlet flow adjacent to the inner diameter of the purge ring. The purge ring includes a plurality of channels configured to allow gas to flow radially from the outer channel to the outlet network. The purge ring includes a plurality of passages configured to reduce the radial gas flow between the outer channel and the outlet network. In the purge ring, the plurality of channels and the plurality of passages are configured to provide uniform pressure and / or velocity of the gas outlet flow over the entire circumference of the outlet network.

[0009] Further embodiments of the present disclosure include a process chamber. The process chamber includes a plurality of stations, each station including a pedestal assembly. Each pedestal assembly includes a pedestal for supporting a substrate, a purge ring configured to be mounted around the pedestal, and a gas distribution system for distributing gas in a uniform gas flow to each pedestal assembly of the plurality of stations. The purge ring includes a supply port configured to receive gas. The purge ring includes an outer channel connected to the supply port. The purge ring includes an outlet network configured for gas outlet flow adjacent to the inner diameter of the purge ring. The purge ring includes a plurality of channels configured to allow gas to flow radially from the outer channel to the outlet network. The purge ring includes a plurality of passages configured to reduce the radial gas flow between the outer channel and the outlet network. In the purge ring, the plurality of channels and the plurality of passages are configured to provide a uniform pressure and / or velocity of gas outlet flow over the entire circumference of the outlet network.

[0010] These and other advantages will be understood by those skilled in the art by reading the entire specification and claims. [Brief explanation of the drawing]

[0011] Embodiments can be best understood by referring to the following description, which is to be interpreted in conjunction with the accompanying drawings.

[0012] [Figure 1] Figure 1 shows a substrate processing system used to process wafers, for example, to form a film on a wafer.

[0013] [Figure 2A] Figure 2A is a top view of a multi-station processing tool equipped with four processing stations, according to one embodiment.

[0014] [Figure 2B] Figure 2B is a perspective view of the multi-station processing tool shown in Figure 2A, according to one embodiment of the present disclosure.

[0015] [Figure 3] Figure 3 is a schematic diagram of one embodiment of a multi-station processing tool having inbound and outbound load locks.

[0016] [Figure 4A] Figure 4A is a top cross view of a purge ring configured to symmetrically distribute an inert gas around a wafer, according to one embodiment of the present disclosure.

[0017] [Figure 4B] Figure 4B is a top cross view of a purge ring configured to symmetrically distribute an inert gas around a wafer, showing the gas flow around one or more passages according to one embodiment of the present disclosure.

[0018] [Figure 4C]Figure 4C is a table listing an exemplary number of channels and an exemplary width of channels in a purge ring configured to symmetrically distribute an inert gas around a wafer, according to one embodiment of the present disclosure.

[0019] [Figure 4D] Figure 4D is a graph showing the gas velocity with respect to the angular position on a purge ring configured to symmetrically distribute an inert gas around a wafer, according to one embodiment of the present disclosure.

[0020] [Figure 5A] Figure 5A is a perspective view including a cross-section of a purge ring configured to symmetrically distribute a purge gas around a wafer, according to one embodiment of the present disclosure, the purge ring including an outlet network including a plurality of orifices configured for the outflow of gas fed from a distribution volume.

[0021] [Figure 5B] Figure 5B is another perspective view including a cross-section of the purge ring shown in Figure 5A, according to one embodiment of the present disclosure.

[0022] [Figure 5C] Figure 5C is a perspective view including a cross-section of a purge ring configured to symmetrically distribute an inert gas around a wafer, according to one embodiment of the present disclosure, the purge ring including an outlet network including an outlet channel configured for the outflow of gas fed from a distribution volume.

[0023] [Figure 5D] Figure 5D is a perspective view including a cross-section of a purge ring configured to symmetrically distribute an inert gas around a wafer, according to one embodiment of the present disclosure, the purge ring including an outlet network including a series of outlet ports disposed on an inner ledge, the outlet ports being configured for the outflow of gas fed from a distribution volume.

[0024] [Figure 6A-1]Figure 6A-1 is a cross-sectional view along line A--A in Figure 4A of a channel in the distribution volume of a purge ring configured to symmetrically distribute an inert gas around a wafer according to one embodiment of the present disclosure, wherein the outlet channel is configured to be oriented downward and inward.

[0025] [Figure 6A-2] Figure 6A-2 is a cross-sectional view of a channel in the distribution volume of a purge ring configured to symmetrically distribute an inert gas around a wafer according to one embodiment of the present disclosure, wherein the outlet channel is configured to be oriented downward and outward.

[0026] [Figure 6A-3] Figure 6A-3 is a cross-sectional view of a channel in the distribution volume of a purge ring configured to symmetrically distribute an inert gas around a wafer according to one embodiment of the present disclosure, wherein the outlet channel is configured to be oriented upward and inward.

[0027] [Figure 6A-4] Figure 6A-4 is a cross-sectional view of a channel in the distribution volume of a purge ring configured to symmetrically distribute an inert gas around a wafer according to one embodiment of the present disclosure, wherein the outlet channel is configured to be oriented upward and outward.

[0028] [Figure 6B] Figure 6B is a section view including a cross-section of a purge ring configured to symmetrically distribute an inert gas around a wafer.

[0029] [Figure 6C] Figure 6C is a cross-sectional view along line B--B in Figure 4A of a passage in the distribution volume of a purge ring configured to symmetrically distribute an inert gas around a wafer, according to one embodiment of the present disclosure.

[0030] [Figure 7]Figure 7 shows a gas distribution system according to one embodiment of the present disclosure for distributing a uniform gas flow to pedestal assemblies of multiple stations within a process chamber, each of which includes a purge ring configured to symmetrically distribute an inert gas around a wafer.

[0031] [Figure 8A] Figure 8A is a cross-sectional view of a pedestal assembly according to one embodiment of the present disclosure, which includes a purge ring configured to symmetrically distribute an inert gas around a wafer and a conduit for supplying the gas to the purge ring.

[0032] [Figure 8B] Figure 8B is a cross-sectional view of a coupling interface connecting a gas conduit to a ceramic purge ring configured to symmetrically distribute an inert gas around a wafer, and to the conduit for supplying the gas to the purge ring, according to one embodiment of the present disclosure.

[0033] [Figure 8C] Figure 8C is a cross-sectional view of a flow resistor configured within a conduit for supplying gas to a purge ring configured to symmetrically distribute an inert gas around a wafer, and of the conduit for supplying gas to the purge ring, according to one embodiment of the present disclosure.

[0034] [Figure 8D] Figure 8D is a cross-sectional view of a pedestal assembly, including a purge ring configured to symmetrically distribute an inert gas around a wafer, according to one embodiment of the present disclosure.

[0035] [Figure 9A] Figure 9A is a top view of a multi-station processing tool with four processing stations according to one embodiment of the present disclosure, and shows a gas distribution system for distributing gas with a uniform gas flow to each base assembly of the multiple stations.

[0036] [Figure 9B]Figure 9B is a top view of a chamber insert of a multi-station processing tool equipped with four processing stations according to one embodiment of the present disclosure, and shows the gas distribution system of Figure 9A being delivered through openings in the station partitions of the chamber.

[0037] [Figure 9C] Figure 9C is a bottom view of a chamber insert of a multi-station processing tool equipped with four processing stations according to one embodiment of the present disclosure, and shows the gas distribution system of Figure 9A being delivered through openings in the station partitions of the chamber.

[0038] [Figure 10] Figure 10 shows a control module for controlling the system described above. [Modes for carrying out the invention]

[0039] The following detailed description includes many specific details for illustrative purposes, but those skilled in the art will understand that many variations and modifications of the following details are within the scope of this disclosure. Accordingly, the aspects of this disclosure described below are described without loss of generality to the claims that follow this description, and without imposing any limitations.

[0040] Generally speaking, various embodiments of this disclosure describe systems for improving film uniformity during wafer processing (e.g., PECVD and ALD processes) in single-station and multi-station systems. In particular, various embodiments of this disclosure describe a pedestal assembly including a ceramic purging ring that locally dilutes the plasma sheath around the wafer, the purging ring being designed to deliver a precise amount of inert gas flow during the deposition process. Through the purging ring, a sufficient inert mass gas flow is introduced around the wafer, such as during a plasma chemical vapor deposition (PECVD) process, preventing the accumulation of excess charge at the wafer edge. The PECVD process is used to deposit thin films on a substrate through the chemical reaction of gases that generate the plasma. In this way, this reduction in charge on the wafer edge reduces the probability of discharge or arc discharge from the wafer to the ceramic pedestal during the process, thereby improving wafer uniformity, particularly at the wafer edge, in some embodiments. In particular, the purging ring is made of high-temperature ceramic configured to withstand temperatures in the range of 650°C in order to deliver the inert gas around the wafer by the purging ring. The geometric shape of the ceramic purge ring utilizes multilayer ceramic technology to create an internal radial passage and / or plenum distribution for supplying inert gas to the distribution volume of the secondary internal passage and / or plenum and channel. These internal channels are formed using multilayer ceramic technology and form the geometric shape for variable flow paths for the inert gas. In one embodiment, a precise pattern of orifices around the ring ensures that the inert gas is supplied around the wafer at a precise and controlled mass flow rate. In one embodiment, a single inert gas supply port is provided for efficiency within the process chamber. Conventionally, the distribution of mass flow in a purge ring with a single inert gas supply port is inherently highly asymmetric, with a large gas flow near the supply port and a decrease in gas flow around the purge ring until it reaches the opposite side of the supply port. However, embodiments of the present disclosure provide a purge ring configured to vary the gas flow around the purge ring.In particular, the purging of embodiments of the present disclosure is configured to provide a fluid variable flow approach that corrects the distribution of mass flow to a symmetrical distribution around the wafer. This is achieved by designing multiple internal flow channels and / or conductance channels, one or more orifices that allow gas discharge, selection of one or more orifices of an appropriate type, selection of a desired number of one or more orifices, the shape, size, and diameter of the orifices, etc. In further embodiments, in addition to arc suppression, embodiments of the present disclosure may be used to prevent backside carbon deposition by dilution of C3H6.

[0041] The advantage of various embodiments disclosing a process chamber including one or more pedestal assemblies of one or more stations and corresponding purge rings configured to symmetrically distribute an inert gas around a wafer (e.g., supplying a gas flow with uniform pressure in the azimuthal direction along the wafer periphery, and / or supplying a gas flow with uniform velocity or speed in the azimuthal direction along the wafer periphery) is that it provides a more economical and efficient supply of gas to one or more stations within the process chamber. In addition, each of the purge rings provides a more efficient supply of gas within the purge ring by using a single supply port (e.g., a purge inlet), as well as a suitable configuration of the distribution volume of passages and channels around the wafer.

[0042] With the above general understanding of various embodiments, exemplary details of the embodiments will now be described with reference to various drawings. Elements and / or components similarly numbered in one or more drawings are generally intended to have the same configuration and / or function. Furthermore, drawings may not be drawn to a constant scale but are intended to illustrate and highlight novel concepts. It will be apparent that these embodiments can be put into practice without some or all of these specific details. In other examples, well-known process operations are not described in detail so as not to unnecessarily obscure these embodiments.

[0043] Figure 1 shows a reactor system 100 that may be used to deposit films on a substrate, such as films formed by PECVD or ALD processes. More specifically, Figure 1 shows a substrate processing system 100 used to process a wafer 101. The system includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. A central column is configured to support a pedestal 140, which in one embodiment is a power supply electrode. The pedestal 140 is electrically coupled to a power supply 104 via a matched network 106. The power supply is controlled by a control module 110, for example, a controller. The control module 110 is configured to operate the substrate processing system 100 by executing a process input and control unit 108. The process input and control unit 108 may include a process recipe for depositing or forming a film on the wafer 101, such as power levels, timing parameters, process gases, purge gases for purging, and mechanical movement of the wafer 101.

[0044] A central column (also known as a central shaft or spindle, e.g.) 160 can be coupled to lift pins (not shown), each of which is actuated by a corresponding lift pin actuation ring 120 controlled by a lift pin control unit 122. The lift pins are used to raise a wafer 101 from a pedestal 140, allowing a robotic arm (e.g., an end effector, etc.) to feed (e.g., load) the wafer into a process chamber and / or remove (e.g., unload) the wafer from the process chamber 250. In one embodiment, a ringless wafer feeding system is implemented, configured to transfer wafers between stations without using a carrier ring. The substrate processing system 100 further includes a gas supply manifold 112 connected to a process gas 114, e.g., a gas chemical supply from the facility. Depending on the process being performed, a control module 110 controls the supply of the process gas 114 through the gas supply manifold 112. Next, the selected gas is flowed into the showerhead 150 and distributed into the spatial volume defined between the surface of the showerhead 150 facing the wafer 101 and the wafer 101 resting on the base 140. In the ALD process, the gas may be a reactant selected for absorption or reaction with the absorbed reactant.

[0045] Furthermore, the gas may or may not be pre-mixed. Appropriate valve adjustment and mass flow control mechanisms can be used to ensure that the correct gas is supplied during the process deposition and plasma treatment phases. The process gas exits the chamber through an outlet. A vacuum pump (e.g., a single- or two-stage mechanical dry pump and / or turbomolecular pump) draws out the process gas, and a closed-loop controlled flow limiting device, such as a throttle valve or pendulum valve, maintains the reactor at a sufficiently low pressure.

[0046] A purge ring 200 surrounding the outer and / or peripheral area of ​​the base 140 is also shown. In one embodiment, the purge ring 200 is positioned beneath the wafer 101 placed on the base 140, as shown in Figure 1. The purge ring 200 is designed to supply a purge gas (e.g., an inert gas, such as nitrogen) to the wafer edge to reduce and / or prevent the accumulation of excess charge at the wafer edge during the deposition process. The purge gas is supplied from a gas supply line 840 connected to a gas supply system. In one embodiment, the purge ring 200 remains within a station and is not rotated between stations, for example, within a multi-station processing chamber and / or system. In other embodiments, the chamber is a single-station chamber. The supply of purge gas to the purge ring can be controlled using a controller 110 and / or process input and control unit 108.

[0047] Figure 2A shows a top view of a multi-station processing tool 250 equipped with four processing stations. This top view is of the lower chamber portion 102b (for example, the upper chamber portion 102a has been removed for illustration purposes), and the four stations (e.g., stations 1, 2, 3, and 4) may be accessed by a ringless wafer feeding system configured to transfer wafers between stations without using carrier rings. The ringless wafer feeding system includes one or more paddles 225, each of which is configured to work with a corresponding wafer that is lifted from a base using, for example, a lift pin. The ends of the paddles 225 may include three dynamic wafer contact pads 226 configured to work with the underside of a wafer, such as when transferring a wafer from one station to another. The ends of the paddles 225 may articulate to make additional movement when oriented the corresponding paddle under the corresponding wafer. Each paddle can be rotated (for example, simultaneously) using the rotation mechanism 220, thereby allowing wafers introduced into the station from within the chamber 250 (for example, by loading and / or unloading wafers between station 1 and the load lock using a robotic arm) to be transferred and / or rotated from station to station using a ringless wafer feeding system, thus enabling further plasma treatment, processing, and / or film deposition, wafer feeding, and / or removal on each wafer 101.

[0048] An opening 210 is shown within the station partition wall 211 of the multi-station processing tool 250, and the wall 211 separates each of the stations. In one embodiment, the opening 210 can be used to provide a gas supply conduit or gas supply structure 710 within the multi-station processing tool, as will be further described below with reference to Figures 9A-9C. The gas supply conduit 710 is included within a gas distribution system used to supply purge gas to each of the stations, as will be further described with reference to Figure 7.

[0049] Figure 2B shows a perspective view of the multi-station processing tool 250 introduced in Figure 2A, according to one embodiment of the present disclosure. More specifically, the lower chamber portion 102b is shown without the base assembly (e.g., base 140, purge ring 200, spindle 160, etc.) to fully reveal the internal volume of each station. For example, the opening 210 is clearly shown in Figure 2B. Each station (e.g., 1, 2, 3, and 4) also includes a station connection portion 221 configured to seat the spindle 160 (e.g., central shaft) of the base 140. A central hole 215 is also shown, configured to receive a rotating mechanism used to index a wafer to a particular station.

[0050] Figure 3 shows a schematic diagram of one embodiment of the multi-station processing tool 250 of Figures 2A-2B, which has an inbound load lock 302 and an outbound load lock 304. Robot 306 is configured to move substrates from a cassette loaded via pod 308 to the inbound load lock 302 via atmospheric pressure port 310 at atmospheric pressure. The inbound load lock 302 is coupled to a vacuum source (not shown) and can therefore be pumped down when atmospheric pressure port 310 is closed. The inbound load lock 302 also includes a chamber transport port 316 which is linked to the processing chamber 102b. Therefore, when the chamber transport 316 is opened, another robot (not shown) (e.g., a ringless wafer feeding system) can move the substrates from the inbound load lock 302 to the pedestal 140 of the first process station for processing.

[0051] The illustrated multi-station processing chamber 250 includes four process stations numbered 1 to 4 in the embodiment shown in Figure 3. Each of the process stations illustrated in Figure 3 includes a purge ring 200 and a process gas supply line inlet or purge inlet (not shown). The purge ring is configured to reduce and / or prevent the accumulation of excess charge at the wafer edge during the deposition process. The reduction in charge at the wafer edge reduces the probability of discharge or arc discharge from the wafer to the ceramic base during the process, thereby improving wafer uniformity, particularly at the wafer edge.

[0052] Figure 4A shows a top view of a horizontal cross section of a purge ring 200 according to one embodiment of the present disclosure. In embodiments of the present disclosure, the purge ring 200 is configured to distribute a purge gas (e.g., an inert gas) symmetrically and radially around a wafer. In particular, the purge ring 200 is configured to dilute the plasma sheath around the wafer during processing (e.g., deposition) and is configured to deliver the gas radially through passages and channels throughout the purge ring in a symmetric flow at all points around the circumference 410 of the purge ring, the circumference may be aligned with an outlet network configured for the gas to flow out to the wafer. Specifically, the purge ring is configured to deliver a gas flow at a uniform pressure in the azimuthal direction along the wafer and / or a gas flow at a uniform velocity or speed in the azimuthal direction along the wafer.

[0053] The purge ring 200 is configured to deliver a gas (e.g., purge gas, inert gas, nitrogen, N2, vapor, etc.) to the edge of a wafer (not shown) under extreme conditions (e.g., high temperature, high pressure, etc.). In one embodiment, the purge ring 200 includes a single supply port or purge inlet 420 configured to receive gas from a gas distribution system (not shown). The purge ring 200 is configured to supply a flow of purge gas sufficient to replace process gas (e.g., argon, C3H6, etc.) at the wafer edge during processing (e.g., deposition), and more specifically, to prevent arc discharge (e.g., discharge) from the wafer edge to the base. That is, arc discharge due to electrostatic discharge from the wafer to the base is reduced and / or eliminated by reducing the process gas at the wafer edge by introducing the purge gas at the wafer edge.

[0054] As shown in Figure 4A, the purge ring 200 includes a supply port or purge inlet 420 configured to receive a gas (e.g., purge gas, inert gas, nitrogen, etc.), and in some embodiments, the gas is in the form of vapor. The purge ring also includes an outer channel 450 connected to the supply port 420. In one embodiment, the outer channel 450 is configured close to the outer diameter 470 of the purge ring 200. The outer channel 450 distributes the purge gas around the purge ring in a first stage of gas distribution. For example, the outer channel 450 exhibits low fluid resistance to allow circumferential flow of the purge gas throughout the outer channel. In this way, the gas reaches pressure equilibrium within the outer channel 450 before radially entering or leaking into the multiple channels and passages in a second stage of gas distribution. That is, the outer channel 450 is configured to achieve pressure equilibrium before radial flow of gas to the outlet network occurs. As shown, the input gas flow 435 supplied as input from the purge inlet 420 flows in opposite directions within the outer channel 450. That is, after entering the purge ring 200 from the purge inlet 420, the gas flows counterclockwise within the outer channel 450 from the purge inlet (for example, towards the upper half of the purge ring 200) and also clockwise within the outer channel 450 (for example, towards the lower half of the purge ring 200).

[0055] The purge ring 200 includes an outlet network 460 configured for gas outlet flow adjacent to the inner diameter 475 of the purge ring 200. For example, the outlet network 460 can be configured in any way that provides a symmetrical gas outflow at all points around the wafer edge. That is, the gas pressure is uniform throughout the outlet network 460, providing a symmetrical gas outflow. That is, the gas flow is delivered with uniform pressure in the azimuthal direction along the periphery of the wafer (e.g., the circumference of the purge ring), and / or the gas flow is delivered with uniform velocity or speed in the azimuthal direction along the periphery of the wafer. Even distribution of gas to the wafer edge helps prevent arc discharge at all points around the base from the wafer edge due to electrostatic discharge that may accumulate on the wafer edge from the process gas. In some cases, this allows for uniform film deposition during processing across the entire wafer, including areas adjacent to the wafer edge.

[0056] The purge ring includes a plurality of channels 490 and a plurality of passages 430 connecting the outer channel 450 to the outlet network 460. The channels and passages are configured to distribute the purge gas evenly to the outlet network 460 around a circumference 410 associated with the outlet network 460. Specifically, the channels and passages are configured to supply a radial and symmetrical flow of purge gas at all points on the circumference 410 defining the outlet network 460, the circumference located close to the inner diameter 475 of the purge ring 200. That is, the channels and passages supply the gas with a uniform gas flow to all points on the circumference 410 associated with the outlet network 460. More specifically, the channels and passages are configured to provide a uniform pressure of the outlet flow of gas in the azimuthal direction around the circumference 410 of the outlet network 460 (e.g., at the supply points). Accordingly, the channels and passages are configured to provide a uniform velocity (e.g., magnitude of velocity) of the gas outlet flow around or over the circumference 410 of the outlet network 460. In this way, the outlet network 460 can uniformly deliver gas to the wafer edge radially and symmetrically. That is, embodiments of the present disclosure deliver gas at a uniform pressure and / or velocity in the azimuthal direction around the circumference of a purge ring configured with an asymmetric geometric shape. For example, the pressure can be calculated so that the gas delivered by the purge ring can overcome the opposite pressure gradient and avoid deposition on the back surface of the wafer.

[0057] In one embodiment, the purge ring 200 is configured symmetrically around a line 440 such that the channels and passages are configured symmetrically between two halves of the purge ring defined by the line 440. More specifically, the line 440 can represent a plane of symmetry in which the two halves of the purge ring 200 (e.g., the upper and lower planes) are configured symmetrically. As shown, the line of symmetry 440 (which can represent a plane of symmetry) can define a radius originating from a center 441. For example, the purge inlet 420 is located on the 0-degree radial direction on the line 440. On the opposite side of the purge inlet 420, the line 440 defines a 180-degree radial direction (e.g., the center of the passage 430I).

[0058] In particular, in the multiple passages 430, each passage is configured to reduce the radial flow of gas between the outer channel and the outlet network. That is, the passage restricts the radial flow of gas to the outlet network 460. For example, the passage blocks, redirects, and / or restricts the free flow of purge gas within, in, and around the passage. In one embodiment, the passage comprises a plenum including a structure configured to reduce the gas flow. In another embodiment, the passage comprises a porous medium, which can be defined as any medium having pores (e.g., holes). In yet another embodiment, part of the passage comprises a solid medium. As shown in Figure 4A, the center of passage 430A is located at 0 degrees on line 440. Additional passages are configured within the purge ring 200. In addition to passage 430A which moves counterclockwise, the purge ring 200 includes passages 430B, 430C, 430D, 430F, 430G, 430H, and 430I. More specifically, the center of passage 430I is located at a 180-degree angle to line 440.

[0059] In one embodiment, the size (e.g., radial width) of the passages within the multiple passages 430 decreases as they move radially around the circumference 410 of the purge ring 200 until they reach a point on the circumference opposite the supply port or purge inlet 420 (e.g., 180 degrees). In particular, the radial width of a first passage centered at a radial distance from the purge ring inlet is smaller than the radial width of a second passage centered at a radial distance closer to the purge ring inlet. For example, the radial width of passage 430I is smaller than the radial width of at least one of passages 430H, or passage 430G, or passage 430F, or passage 430E, or passage 430D, or passage 430C, or passage 430B. Due to symmetry constraints with respect to the line of symmetry and / or plane 440, passage 430A may be smaller than at least one of passages 430I, or passage 430H, or passage 430G, or passage 430f, or passage 430E, or passage 430D, or passage 430C, or passage 430B.

[0060] In one embodiment, at least a portion of the center of the passages can be uniformly distributed over the entire circumference 410 of the purge ring 200 (for example, symmetrically distributed radially). In another embodiment, the passages are distributed asymmetrically around the circumference 410 of the purge ring 200.

[0061] As described above, the purge ring 200 can exhibit symmetry around a line of symmetry 440 that can define a plane of symmetry in which the two halves of the purge ring may be identical. Thus, the lower half of the purge ring 200 located below the line of symmetry 440 and / or plane of symmetry is constructed similarly to the upper half of the purge ring 200 located above the line of symmetry and / or plane 440, starting from the center of the passage 430A located at 0 degrees and ending at the center of the passage 430I located at 180 degrees, moving in a clockwise direction. In other words, the passage above the line of symmetry and / or plane 440 can be constructed similarly to the passage located below the line of symmetry and / or plane 440.

[0062] The distance between two passages defines a channel. In particular, the purge ring 200 includes a plurality of channels 490, each channel configured to allow gas to flow radially from the outer channel 450 to the outlet network 460. For example, a channel is configured to allow an unlimited flow of gas from the outer channel 450 to the outlet network 460. As shown, channel 1 is formed between passages 430A and 430B, channel 2 is formed between passages 430B and 430C, channel 3 is formed between passages 430C and 430D, channel 4 is formed between passages 430D and 430E, channel 5 is formed between passages 430E and 430F, channel 6 is formed between passages 430F and 430G, channel 7 is formed between passages 430G and 430H, and channel 8 is formed between passages 430H and 430I.

[0063] In one embodiment, the passage is configured such that the channel width (e.g., radial width) increases radially based on the distance from the purge inlet 420. In particular, the channel increases radially as it moves radially around the circumference 410 of the purge ring until it reaches a point on the circumference opposite the supply port or purge inlet 420 (e.g., 180 degrees). That is, channels closer to the purge inlet 420 (e.g., less than 90 degrees from the purge inlet 420 located at 0 degrees) have a smaller width (e.g., radial width) than channels further from the purge inlet 420 (e.g., more than 90 degrees from the purge inlet 420 located at 0 degrees). In particular, the radial width of a first channel centered on a radial distance from the purge ring inlet is greater than the radial width of a second channel centered on a radial distance closer to the purge ring inlet. For example, the radial width of channel 8 is greater than the radial width of at least one of channel 7, or channel 6, or channel 5, or channel 4, or channel 3, or channel 2, or channel 1.

[0064] In one embodiment, the channels are distributed symmetrically around the circumference 410 of the purge ring 200 (for example, at least some of the centers of the channels may be equidistant from each other). In another embodiment, the channels are distributed asymmetrically around the circumference 410 of the purge ring 200.

[0065] In some embodiments, multiple channels and passages are configured within a distribution volume 480 connecting the outer channel 450 and the outlet network 460. The distribution volume is configured to distribute the purge gas evenly to the outlet network 460 around a circumference 410 associated with the outlet network 460. Specifically, the distribution volume 480 is configured to supply a radial and symmetrical flow of purge gas to all points on the circumference 410 defining the outlet network 460, the circumference located close to the inner diameter 475 of the purge ring 200. That is, the distribution volume 480 delivers the gas with a uniform gas flow to all points on the circumference 410 associated with the outlet network 460. In this way, the outlet network 460 can deliver the gas uniformly, radially and symmetrically to the wafer edge.

[0066] As described above, the gas supplied as input to the purge ring 200 at the purge inlet 420 first flows through the entire outer channel 450 in a first stage. For example, the input gas flow 435 flows in the opposite direction from the purge inlet 420 through the outer channel 450, as described above. Thus, the input gas flow 435 flows through the entire outer channel 450 until pressure equilibrium is reached, at which point the purge gas leaks radially into the channel and passages in a second stage. A further discussion of the operation of the individual and combined channels and passages in the second stage is provided in Figure 4B, which shows a top cross view of the purge ring 200 configured to symmetrically distribute gas (e.g., purge gas, inert gas, N2, nitrogen, etc.) around a wafer according to one embodiment of the present disclosure. In particular, the multiple passages 430 and the multiple channels 490 are configured to provide uniform pressure and / or velocity of the gas outlet flow over the circumference 410 of the outlet network 460.

[0067] Figure 4B shows the gas flow around one or more passages according to one embodiment of the present disclosure. The passages are configured to block, redirect, and / or restrict the free flow of purge gas within the passage. For example, gas is shown entering each of a plurality of passages 430 from the outer channel 450, and each passage is configured to reduce the radial gas flow between the outer channel 450 and the outlet network 460. For example, the gas flow may be primarily non-radial within each passage. That is, the gas flow in a corresponding passage cannot follow a direct path to the outlet network 460, such as toward the center 441 of the purge ring 200. Instead, the gas flows in various directions within the corresponding passage, as indicated by arrows in each passage indicating redirection of the gas, such as toward an adjacent channel. For example, passage 430B between channel 1 and channel 2 shows that the gas is redirected toward both adjacent channels. Also, depending on the configuration of the passages, some of the gas may be directed toward the outlet network 460, such as toward the center of the purge ring.

[0068] Furthermore, in the second stage, the open channel design ensures that the gas flow through each channel is not restricted so that the purge gas flows freely and / or directly toward the outlet network 460, for example toward the center of the purge ring 200. That is, the channels are configured so that gas flows radially from the outer channel 450 to the outlet network 460.

[0069] Therefore, the configuration of multiple passages 430 and multiple channels within the distribution volume 480, as well as the configuration of passages and channels within the distribution volume, provides a symmetrical and balanced radial flow of purge gas across the entire circumference 410 associated with the outlet network 460 of the purge ring 200, using only one supply port or purge inlet 420. Without the configuration of passages and / or channels, there would be an asymmetrical distribution of gas across the entire purge ring, with more gas flowing from the outlet ports of the outlet network 460 closer to the purge inlet 420 (e.g., within 90 degrees of the purge inlet) and less gas flowing from the outlet ports of the outlet network further away from the purge inlet 420 (e.g., more than 90 degrees away from the purge inlet).

[0070] However, the configuration of the passages and / or channels in embodiments of the present disclosure (e.g., multiple internal passages and / or conductance channels, one or more outlet openings or outlet ports in the outlet network, the shape of the outlet openings or outlet ports, etc.) allows the purge ring 200 to supply a symmetrical and balanced radial flow of gas using a single supply port or purge inlet 420. Specifically, the configuration of the passages and / or channels supplies a variable flow rate of fluid throughout the purge ring to provide a symmetrical radial distribution of gas around the inner diameter 475 of the purge ring 200, and more specifically around the circumference 410 associated with the outlet network 460 of the purge ring 200.

[0071] In particular, multiple vectors F(v) exist around the inner diameter 475 of the purge ring 200. Each vector may originate from a corresponding point on the circumference 410 associated with the outlet network 460 and have a direction toward the center 441 of the purge ring 200. That is, each vector F(v) originates from the corresponding outlet network, such as an outlet opening, orifice, outlet port, or opening, and has a corresponding direction toward the center 441. Thus, the vectors F(v) are distributed around the circumference 410 of the purge ring associated with the outlet network 460.

[0072] In addition, the configuration of the passages and / or channels provides a symmetrical radial distribution of gas from the outlet network. That is, the gas flow at each point on the circumference 410 associated with the outlet network 460 is uniform, thereby the magnitude of each of the multiple vectors F(v) is approximately equal. For example, the velocity circle 425 shows approximately equal velocities (e.g., magnitudes) for all vectors F(v), and the distance along each vector between the circumference 410 and the velocity circle 425 is approximately equal along all radial lines of the purge ring 200. That is, each of the vectors F(v) has approximately the same velocity. As previously mentioned, each of the vectors F(v) indicates the gas flow velocity and direction toward the center of the purge ring. In this way, the gas is supplied around the wafer in a precise, controlled, and uniform manner. That is, the mass flow rate or radial velocity of the gas is uniform at all points on the circumference 410 of the outlet network 460, so that the purge ring 200 supplies a radially symmetrical flow of gas. Specifically, embodiments of the present disclosure supply gas at a uniform pressure and / or velocity in the azimuthal direction around the circumference of a purge ring.

[0073] Figure 4C shows Table 435 listing exemplary numbers and widths of channels in a purge ring 200 configured to symmetrically distribute gas around a wafer according to one embodiment of the present disclosure, as well as a reprojection of the passages and channels of the purge ring, which is configured to have radially symmetric flow. For illustrative purposes, Table 435 shows a purge ring having eight channels (e.g., half around a symmetry line and / or plane not shown), but other embodiments support purge rings having more or fewer numbers of channels.

[0074] In particular, Table 435 shows the various channel thicknesses on both sides of the line of symmetry and / or plane of symmetry. For the purposes of discussion, channels 1-8 shown in Figures 4A and 4B will be discussed, which represent channels on both sides of the line of symmetry 440 and / or plane of symmetry. In one embodiment, multiple sizes of channels help reduce variations in the radial flow of the purge gas so that the purge gas flow remains uniform at all angular positions around the purge ring 200, such as around the circumference 410 associated with the outlet network 460.

[0075] Reprojection drawing 445 shows the horizontal layout of channels 1 to 8 and the varying widths of the channels (e.g., radial width). In particular, channels closer to the purge inlet 420 (located at 0 degrees) have smaller radial widths than channels further from the purge inlet 420, such as channels closer to the opposite point of the purge inlet 420 (e.g., 180 degrees), as mentioned above. Reprojection drawing 445 also shows multiple passages 430 (e.g., passages 430A...430I), with passage 430A centered at approximately 0 degrees and passage 430I centered at approximately 180 degrees.

[0076] In one embodiment, at least some of the centers of each of the passages, including passages 430B, 430C, 430D, 430F, 430G, and 430H, are equidistant from each other (e.g., distance "d"), as described above. That is, in one embodiment, the centers of the multiple passages can be distributed radially evenly across the entire circumference 410 associated with the exit network 460 of the purge ring 200. In another embodiment, the passages are distributed asymmetrically. Also, the channels (e.g., channels 1-8) can be distributed symmetrically or asymmetrically across the entire circumference 410.

[0077] In one embodiment, the size (e.g., radial width) of a channel increases as it moves radially around the circumference of the purge ring until it reaches a point on the circumference opposite the supply port or purge inlet 420, as described above. For illustrative purposes, channel 1, closest to the purge inlet 420, has a width of 4 units. Channel 8, furthest from the purge inlet 420, has a width of 24 units. Channels located radially between channel 1 and channel 8 have corresponding widths based on their radial distance from the purge inlet 420. That is, channels further from the purge inlet 420 are wider than channels closer to the purge inlet 420, as shown in Table 435. In particular, the radial width of a first channel centered on a radial distance from the purge ring is greater than the radial width of a second channel centered on a radial distance closer to the purge ring inlet.

[0078] The increasing channel size further away from the inlet port 420 is designed to facilitate an increase in gas flow (e.g., mass flow distribution) circumferentially within the purge ring 200, more specifically at points further away from the purge inlet 420 within the outlet network 460, in order to distribute the gas symmetrically around the wafer (e.g., even mass flow distribution), in other words, to supply an even and uniform gas flow at all points around the circumference 410 associated with the outlet network 460. Conventionally, without the passage and / or channel configuration of the embodiments of the present disclosure, the distribution of mass flow within the purge ring is highly asymmetrical, with more gas flow closer to the purge inlet and very little gas flow at points opposite the purge inlet. However, the passage and / or channel configuration of the embodiments of the present disclosure enables an even mass flow distribution throughout the purge ring 200 and the outlet network 460, supplying an even and uniform gas flow at all points around the circumference 410 associated with the outlet network 460 of the purge ring 200, so that the gas is distributed symmetrically around the wafer.

[0079] Correspondingly, as the channel size increases further radially away from the purge inlet 420, the size of the passage (e.g., radial width) may decrease as it moves radially around the circumference of the purge ring until it reaches a point on the opposite side of the circumference from the supply port 420 (e.g., 180 degrees), as described above. For example, the passage may gradually decrease in size as it moves radially away from the purge inlet 420 at 0 degrees. For illustrative purposes, passages 430B, 430C, 430D, 430E, 430F, 430G, 430H, and 430I may sequentially decrease in size (e.g., radial width) such that passage 430B has the greatest width and passage 430I has the smallest width. In one embodiment, due to symmetry constraints with respect to the line of symmetry and / or plane 440, passage 430A centered at 0 degrees may have a smaller radial width than the adjacent passage 430B.

[0080] Figure 4D is a graph 465 showing the variation in gas velocity (e.g., x-axis) with respect to angular position (e.g., y-axis) on a purge ring configured to distribute gas symmetrically around a wafer, according to one embodiment of the present disclosure. As shown, in particular, graph 465 shows that there is little variation in the gas outlet flow rate and / or pressure around the inner diameter of the purge ring, or around the circumference 410 associated with the outlet network 460 of the purge ring 200. That is, the velocity of the gas flow from the outlet network 460 is approximately equal at all points around the circumference. Correspondingly, the pressure of the gas supplied from the outlet network 460 is approximately equal at all points around the circumference. For example, the gas velocity and / or pressure at a point close to the purge inlet 420 located at 0 degrees is approximately equal to the gas velocity and / or pressure at the point furthest from the purge inlet (e.g., 180 degrees).

[0081] Figure 5A is a perspective view including a cross-section of a purge ring 200 configured to symmetrically distribute a gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around a wafer, according to one embodiment of the present disclosure. As shown, the purge ring 200 includes an outlet network 460 including a plurality of outlet openings configured for gas outflow, and the purge ring is configured such that the gas flows radially symmetrically, so that an even and uniform gas flow exits the purge ring at all points around the circumference 410 associated with the outlet network 460.

[0082] For example, the purge ring includes an outer channel 450 configured to receive gas from the gas distribution system at a purge inlet 420 (not shown). The outer channel is configured to exhibit low fluid resistance to the gas so that pressure equilibrium is reached throughout the outer channel 450 in a first stage of gas distribution before the gas is supplied to the distribution volume 480. That is, after equilibrium is reached in the outer channel, the gas leaks into the distribution volume 480, which includes a plurality of passages and a plurality of channels, as described above. The passages and channels in the distribution volume 480 (for example) are configured to supply a uniform and symmetrical radial gas flow to a reservoir 510, which in an embodiment connects the channels and passages in the distribution volume 480, and / or the channels and passages, to an outlet network 460. In this way, pressure equilibrium is also achieved in the reservoir 510 when supplying the gas to the outlet network, such as before the gas is radially supplied to the outlet network 460. By having a uniform gas flow at all points around the distribution volume 480 and / or all points around the reservoir 510, the gas flow exiting the outlet network 460 distributes the gas symmetrically around the wafer.

[0083] The outlet network 460 can be configured in any manner to symmetrically distribute the gas around the wafer. In one embodiment, the outlet network includes a plurality of outlet openings within the outlet network, each outlet opening configured to provide a corresponding portion of the gas outlet flow. In one embodiment, the outlet network comprises an array of outlet openings. The outlet openings may be of any shape and form and may include openings, orifices, outlet ports, etc. In an embodiment, the outlet openings may be distributed symmetrically or asymmetrically around a circumference 410 associated with the outlet network 460. In another embodiment, the plurality of outlet openings are configured on the bottom surface 515 of the purge ring 200.

[0084] For example, the outlet opening 460A is connected to a channel 520A which is connected to a reservoir 510. In one embodiment, channel 520A is angled to facilitate the outflow of gas from the outlet opening 460A toward the inner diameter 475 of the purge ring 200. In particular, in one embodiment, the outlet network 460 is oriented downward so that the channels leading to the outlet opening (including channel 520A) extend laterally inward as they extend from the reservoir 510 toward the inner diameter 475 and connect to the corresponding outlet opening. In this way, the gas is directed toward the periphery of the wafer (for example, slightly above and overlapping the inner diameter 475 of the purge ring 200) to distribute the gas around the corresponding portion of the wafer periphery, as further described in relation to Figure 8D, for example to dilute the process gas around the wafer. In other embodiments, the outlet network 460 is directed toward the periphery of the wafer (for example, slightly above and overlapping the inner diameter 475 of the purge ring 200) in one embodiment so that the channels (including channel 520A) leading to the outlet opening extend laterally outward as they extend from the reservoir 510 and away from the inner diameter 475 and connect to the corresponding outlet opening. They are oriented in a certain direction. In yet another embodiment, the outlet network is oriented upward so that the channels extend upward from the reservoir toward the top surface 590 and connect to the corresponding outlet openings (not shown), and the channels may extend laterally inward toward the inner diameter 475 or outward toward the inner diameter 475. Figures 6A-1 to 6A-4 show different orientations of the channels and outlet openings of the outlet network 460 in various exemplary embodiments. It is understood that other orientations of the channels and outlet openings are also supported, although they are not shown.

[0085] Figure 5B is a perspective view showing another view including a cross-section of the purge ring 200 shown in Figure 5A, according to one embodiment of the present disclosure. The cross-section may show a region where there are no channels or passages, or a region where passages are configured to completely restrict the flow of purge gas. In particular, a reservoir 510 is shown, and an angled channel 520 connects the reservoir 510 to at least one outlet port (e.g., an outlet opening) of the outlet network 460.

[0086] The reservoir 510 may have a ring shape, annular shape, annular ring shape, etc., and the reservoir 510 has a volume. In one embodiment, the reservoir 510 is continuous, thereby having an internal volume or channel that continues uninterrupted throughout the entire purge ring. In another embodiment, the reservoir 510 may be sectioned such that different sections connect the distribution volume 480 to the corresponding portion of the outlet network 460.

[0087] Figure 5C is a perspective view including a cross-section of a purge ring 200' configured to symmetrically distribute a gas (e.g., a purge gas, an inert gas, nitrogen, N2, etc.) around a wafer, according to one embodiment of the present disclosure. In particular, the purge ring 200' includes an outer channel 450 connected to a reservoir 510 via channels and passages. In one embodiment, the outer channel 450 is connected to the reservoir 510 via a distribution volume including channels and passages. The reservoir 510 connects the channels and passages to an outlet network including one or more continuous channels 530 configured for gas outflow. One or more continuous channels 530 may be configured to follow the circumference of the outlet network, for example, the circumference 410 for illustrative purposes. For example, the outlet network may be a single continuous channel around the entire circumference, or it may be sectioned into multiple sections of a channel configured around the circumference. In one embodiment, at least one of the one or more continuous channels comprises a porous medium. The exit channel 530 supplies a uniform and symmetrical radial gas flow from the purge ring 200', thereby distributing the gas symmetrically around the wafer as described above.

[0088] Figure 5D is a perspective view including a cross-section of a purge ring 200' configured to symmetrically distribute a gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around a wafer, according to one embodiment of the present disclosure. In particular, the purge ring 200'' has an outlet network including a series of outlet ports 550 or outlet openings located on an inner ledge 540 located in close to or adjacent to an outer channel 450. The inner ledge may traverse the outer channel and / or be located in close proximity to the outer channel throughout the purge ring 200'. As shown, the outlet ports 550 are configured for gas outflow according to one embodiment of the present disclosure. As shown, the inner ledge 540 includes at least outlet ports 550A, 550B, and 550C. The outlet ports are positioned to guide the gas toward the inner diameter 475' of the purge ring 200'. In this way, the gas is guided toward the periphery of the wafer (for example, slightly above and overlapping the inner diameter 475' of the purge ring 200'') in order to distribute the purge gas around the corresponding portion of the wafer periphery.

[0089] Figure 6A is a cross-section 600A along line A--A in Figure 4A of a channel 610 in a purge ring 200, as previously described in Figures 4A-4B, configured to symmetrically distribute a gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around a wafer, according to one embodiment of the present disclosure. In one embodiment, the channel 610 is located in a distribution volume 480 that includes channels and passages. The channel 610 shown in Figure 6A supplies a radial gas flow between the outer channel and the outlet network 460, as described above. In particular, the channel 610 provides low fluid resistance to the radial gas and provides an unrestricted radial path to the outlet network 460.

[0090] As shown, the cross-section 600A of the purge ring 200 includes an outer channel 450 configured to provide low circumferential fluid resistance to the gas received at the purge inlet 420. Thus, the gas flows circumferentially around the outer channel 450 until pressure equilibrium is reached in a first stage. After pressure equilibrium is reached, the gas flows radially into and / or leaks into the multiple passages and channels. In some embodiments, the gas flows radially into a distribution volume containing passages and channels. For example, the gas flows radially into channel 610 toward the reservoir 510. Furthermore, the gas flows from the reservoir through channel 520M-1 of the outlet network 460 and exits through the outlet port 460M (e.g., the outlet opening). As described above, in one embodiment, the outlet network 460 is oriented downward so that channels (including channel 520M-1) leading to outlet openings (including outlet opening 460M-1) extend downward and laterally inward as they extend from the reservoir 510 toward the inner diameter 475 and connect to the corresponding outlet openings. Channel 520M-1 can access the reservoir 510 at any point, and it is understood that the configuration shown in Figure 6A-1 is illustrative. The reservoir 510 is configured to reach pressure equilibrium, thereby supplying a symmetrical radial flow of gas throughout the outlet network 460. That is, the outflow of gas from outlet port 460M-1 is approximately equal to the outflow of gas from another outlet port in the outlet network 460.

[0091] Figure 6A-2 shows a cross-section 600A-2 of a channel in the distribution volume of a purge ring configured to symmetrically distribute an inert gas around a wafer according to one embodiment of the present disclosure, where the outlet channel is configured to be oriented downward and outward. Line A-2 is similar in positioning to line A--A in Figure 4A, and the cross-section 600A-2 shows different orientations and configurations of the outlet network 460. In particular, the outlet network 460-2 is oriented downward in one embodiment such that the channel (including channel 520M-2) leading to the outlet opening (including the outlet opening 460M-2) extends downward and laterally outward as it extends away from the inner diameter 475 from the reservoir 510 toward the outer channel 450 and connects to the corresponding outlet opening. Channel 520M-2 can access the reservoir 510 at any location, and it is understood that the configuration shown in Figure 6A-2 is illustrative.

[0092] Figure 6A-3 is a cross-section of a channel in the distribution volume of a purge ring configured to symmetrically distribute an inert gas around a wafer according to one embodiment of the present disclosure, where the outlet channel is configured in an upward and inward orientation. Line A-3 is similar in positioning to line A--A in Figure 4A, and cross-section 600A-3 shows different orientations and configurations of the outlet network 460. In particular, the outlet network 460-3 is oriented upward in one embodiment so that the channel (including channel 520M-3) leading to the outlet opening (including outlet opening 460M-3) extends upward and laterally inward as it extends from the reservoir 510 toward the inner diameter 475 and connects to the corresponding outlet opening. Channel 520M-3 can access the reservoir 510 at any location, and it is understood that the configuration shown in Figure 6A-3 is illustrative.

[0093] Figure 6A-4 shows a cross-section of a channel in the distribution volume of a purge ring configured to symmetrically distribute an inert gas around a wafer according to one embodiment of the present disclosure, where the outlet channel is configured in an upward and outward orientation. Line A-4 is similar in positioning to line A--A in Figure 4A, and cross-section 600A-2 shows a different orientation and configuration of the outlet network 460. In particular, the outlet network 460-2 is oriented upward in one embodiment so that the channel (including channel 520M-4) leading to the outlet opening (including outlet opening 460M-4) extends upward and laterally outward as it extends away from the inner diameter 475 from the reservoir 510 toward the outer channel 450 and connects to the corresponding outlet opening. Channel 520M-4 can access the reservoir 510 at any location, and it is understood that the configuration shown in Figure 6A-4 is illustrative.

[0094] Figure 6B is a perspective section 600B including a cross-section of at least the purge ring 200 previously introduced in Figures 4A-4B, configured to symmetrically distribute a gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around a wafer, according to one embodiment of the present disclosure. Section 600B shows the bottom of the purge ring 200. In particular, the outer channel 450 is configured to provide low circumferential fluid resistance to the gas received at the purge inlet 420, as described above.

[0095] After reaching pressure equilibrium in the outer channel 450, the gas flows and / or leaks radially into the multiple passages 430 and multiple channels. In one embodiment, the gas flows radially into a distribution volume 480 which includes the passages and channels. For example, passages 430X and 430Y are located on both sides of the channel 610, adjacent to the channel 610. Each of passages 430X and 430Y restricts the radial flow of gas through the distribution volume such that the gas is at least partially redirected toward the channel 610 by these passages 430X and 430Y. As previously described, the channels are configured to allow gas to flow radially from the outer channel to the outlet network. In one embodiment, the channels provide an unrestricted radial flow of gas toward the outlet network 460 through the distribution volume 480, as previously described. That is, the passages provide higher radial fluid resistance compared to the radial fluid resistance present in the channels. Therefore, the passage and channel configuration is set to supply an even and uniform radial gas flow to the reservoir 510 throughout the entire purge ring 200.

[0096] As described above, the reservoir 510 is configured to reach pressure equilibrium, thereby supplying a symmetrical radial flow of gas throughout the outlet network 460. For example, the outlet network 460 may include a plurality of outlet openings or outlet ports distributed throughout the circumference 410 of the purge ring 200. Thus, the outflow of gas from any outlet opening or outlet port in the outlet network 460 is approximately equal to the outflow of gas from another outlet opening or outlet port in the outlet network.

[0097] Figure 6C is a cross-section 600C along line B--B of an exemplary passage in a purge ring configured to symmetrically distribute a gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around a wafer, according to one embodiment of the present disclosure. In one embodiment, the passage is located in a distribution volume 480 including the passage and channel, as described above. As shown, the cross-section 600C of the purge ring 200 includes an outer channel 450 configured to provide low circumferential fluid resistance to the gas received at the purge inlet 420. Thus, the gas flows around the outlet channel until pressure equilibrium is reached in a first stage. After pressure equilibrium is reached, the gas flows radially into and / or leaks out of the plurality of passages and the plurality of channels. In one embodiment, the gas flows radially into the distribution volume 480 including the passage and channel.

[0098] In section 600C, the gas flows into passage 430C, generally toward the reservoir 510, and passage 430 is configured to reduce the radial flow of gas. Passage 430C is located between channel 2 and channel 3. As previously described, passage 430C is configured to restrict, bypass, or redirect the gas flow through the distribution volume 480 as the gas flows toward the outlet network 460. In particular, passage 430C provides higher radial fluid resistance to the gas compared to the fluid resistance present in the channels, thus providing a restricted radial path through passage 430C to the outlet network 460. The gas then flows from the reservoir through channel 520P in the outlet network 460 and exits through outlet port 460P. Reservoir 510 is configured to reach pressure equilibrium, thereby supplying a symmetrical radial flow of gas throughout the outlet network 460. In other words, the gas outflow from the outlet opening or outlet port 460P is approximately equal to the gas outflow from another outlet opening or outlet port in the outlet network 460.

[0099] The passage 430C can be configured for varying degrees of fluid resistance. The passage may be a solid or porous medium having a flat surface 482 (see, for example, passage 430Y in Figure 6B). For example, the distance "d" between the surface 482 and the top surface 481 can be selected to provide different values ​​of fluid resistance. The space between the surface 482 and the top surface 481 supplies the fluid flow. Generally, for illustrative purposes, at least radially, a larger distance "d" in the space results in less fluid resistance (lower passage height), and a smaller distance "d" results in more fluid resistance (e.g., a higher passage height). Furthermore, varying the porosity, size, and / or shape of the passage also affects the fluid resistance. For example, instead of having a flat surface for the passage, the surface 482 of passage 430C may be ribbed across its entire surface to increase the surface area, thereby increasing the fluid resistance in the corresponding passage, at least radially. In embodiments of this disclosure, one or more passages in the plurality of passages 430 may be configured differently to provide varying degrees of fluid resistance.

[0100] Figure 7 shows a gas distribution system 700 according to one embodiment of the present disclosure, configured to distribute a uniform gas flow to each of the base assemblies of multiple stations in a multi-station process chamber. The gas distribution system 700 provides balanced gas distribution between stations so that a uniform gas flow is supplied to each of the stations (e.g., STN1, STN2, STN3, and STN4) at each of the supply branching points. The gas distribution system 700 is configured to operate under extreme conditions such as high temperature and high pressure present in the processing chamber.

[0101] In one embodiment, each of the corresponding station base assemblies includes a purge ring configured to symmetrically distribute a gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around a wafer, according to one embodiment of the present disclosure. As previously stated, the purge ring supplies a symmetrical and balanced radial flow at one supply port (e.g., purge inlet 420). In particular, the purge ring is configured to supply a radially symmetric flow at all points in an outlet network (e.g., multiple outlet ports) to supply a variable flow rate of fluid. Thus, in one embodiment, the radial velocity of the gas flow at all points in the outlet network is uniform. Furthermore, in another embodiment, the pressure of the gas flow at all points in the outlet network is uniform.

[0102] In particular, the gas distribution system 700 includes equipment 760 that provides a gas source. Ultra-high purity (UHP) and high-precision pressure regulators 750 are provided to regulate pressure, such as providing low pressure. Precision mass flow controllers (MFCs) 740 are configured to control the gas to low flow rates and low pressures. In particular, the MFCs 740 are not pressure-sensitive and provide precise low-flow MFCs for the gas. UHP 2-port / 2-position valves 730 are also provided. Equipment 760, UHP pressure regulators 750, MFCs 740, and UHP 2-port / 2-position valves 730 are installed in or connected to gas supply structures such as flexible gas lines or conduits or conduits 710.

[0103] In particular, the gas supply structure or conduit 710 is delivered through the internal station partition 211 of the process chamber, and the gas supply structure 710 supplies gas to each of the stations via corresponding access ports (e.g., port 920). For example, each access port corresponds to a supply branch leading to a corresponding station. As shown, the gas supply structure 710 includes four supply branches 720-1, 720-2, 720-3, and 720-4. Each of the supply branches is connected to a corresponding access port and configured to supply gas to the purging ring of the pedestal assembly in the corresponding station. For example, supply branch 720-1 supplies gas to station 1, supply branch 720-2 supplies gas to station 2, supply branch 720-3 supplies gas to station 3, and supply branch 720-4 supplies gas to station 4. The highlighted area Z is enlarged to show the components of the supply branch 720-1 in Figure 8A.

[0104] Figure 8A shows a partial cross-section of a pedestal assembly 800A according to one embodiment of the present disclosure, which includes a purge ring 200 configured to symmetrically distribute a gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around a wafer, as described above, and a supply branch 720-1 in highlighted area Z for supplying gas to the purge ring 200. The components in Figure 8A are schematic to illustrate the supply of gas to each station. In particular, the pedestal assembly 800A includes a spindle 160. A station connection 221 is configured to seat the spindle on the corresponding station. A rotation mechanism (not shown) may be connected to the spindle 160 for the purpose of rotating the pedestal 140. The spindle 160 is connected to the pedestal 140, which is configured to support the substrate, as described above. The purge ring 200 is located close to the outer circumference of the pedestal 140, and the interlocking of the purge ring 200 and the pedestal 140 will be described in more detail below in relation to Figure 8D.

[0105] The highlighted area Z is also shown in Figure 8A, providing an enlarged view of the supply branch 720-1 that supplies gas from the gas supply structure 710 to the purge ring 200, as previously described. In particular, the gas supply structure 710 includes an access port 920, which may be a three-way connector in one embodiment, with one connection leading to the branch 720-1. As described above, the gas supply structure 710 supplies a highly accurate gas flow rate (e.g., controlling the gas to a low flow rate and low pressure) to the access port 920 (e.g., a distribution manifold, a three-way connector, etc.). The gas supply structure 710 may include a flexible tube (e.g., metal) and connections.

[0106] The supply branch 720-1 may include at least one fluid resistor 830 configured to regulate the gas flow to the corresponding station. By providing multiple fluid resistors, more precise control is provided. In this way, by regulating the gas flow to each of the multiple stations, a nearly uniform or nearly equal gas flow can be supplied to each station, and the gas regulation can be performed through the fluid resistors of the corresponding branch. For example, a first flow resistor 830a and a second flow resistor 830b may be provided in the gas supply line 820 (e.g., a conduit) of the supply branch 720-1. A coupling interface 840 interlocks the metal gas supply line 820 with a ceramic conduit or tube connected to the ceramic purge ring 200, which will be further described in reference to Figure 8B.

[0107] Figure 8B is an enlarged cross-sectional view of a bonding interface 840 configured to perform a transition from ceramic to metal. In particular, according to one embodiment of the present disclosure, the bonding interface 840 interlocks a metal gas conduit with a ceramic purge ring configured to symmetrically distribute an inert gas around a wafer, and a conduit for supplying gas to the purge ring. As shown, a ceramic supply conduit 829 is connected at one end to the purge ring 200 and at the other end to a coupler 842 via a conical seal. In particular, a nut 841a and a wave washer 843a (which may be, for example, bellows-compliant) are used to secure the supply conduit 829 to the coupler 842. A metal gas supply conduit 820 is connected at one end to an access port for supplying gas (for example, via the aforementioned supply branch). The gas supply conduit 820 is connected at the other end to the coupler 842 via a conical seal. In particular, nuts 841b (e.g., nickel alloy) and wave washers 843b (e.g., bellows-compliant) are used to secure the gas supply line or conduit 820 to the coupler 842.

[0108] As shown, the distance "p" may be variable between supply conduit 820 and supply conduit 829 to provide additional flow control. For example, the larger the distance "p", the greater the fluid resistance affecting the gas flow to the purge ring 200.

[0109] Figure 8C is a cross-sectional view of a flow resistor 830' configured within a conduit for supplying gas to a purge ring 200 configured to symmetrically distribute gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around a wafer, according to one embodiment of the present disclosure, the flow resistor 830' can be included within the conduit for supplying gas to the purge ring. As shown, the flow resistor 830' may be in the form of a bellows configured to provide fluid resistance.

[0110] Figure 8D is a cross-section of an exemplary pedestal assembly 800D showing the periphery of a pedestal 140 that works in conjunction with a purge ring 200, according to one embodiment of the present disclosure. The purge ring 200 receives a gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) through a supply tube 829, which is connected to a gas distribution system 700, including a gas supply structure 710 configured together to deliver the gas to a corresponding station including the purge ring 200. As previously stated, the purge ring 200 includes an outer channel 450 configured to provide low circumferential fluid resistance to the gas received at a purge inlet (e.g., inlet 420) (not shown). Thus, the gas flows circumferentially around the outlet channel until pressure equilibrium is reached in a first stage. After pressure equilibrium is reached, the gas flows radially into and / or leaks into a plurality of passages and a plurality of channels, as previously stated. In one embodiment, the gas flows radially into a distribution volume 480 including passages and channels, as previously stated. For example, gas flows radially through passages and channels toward the reservoir 510. Furthermore, gas flows from the reservoir 510 through channels 520 to the outlet opening or outlet port of the outlet network. The reservoir 510 is configured to reach pressure equilibrium, thereby supplying a symmetrical radial flow of gas throughout the outlet network. That is, the gas outflow from the outlet network is approximately equal at all points around the circumference associated with the outlet network to supply a radially symmetrical and uniform gas flow around the wafer.

[0111] In one embodiment, the purge ring is stationary so as not to move during wafer loading and / or unloading. For example, during wafer feeding, the lift pin 890 moves upward through the movement space 895, raising the wafer 101 from the MCA 850 onto the top surface 870 of the pedestal by a distance sufficient to allow a robotic arm (e.g., an end effector) to engage with the wafer for the purpose of loading and / or unloading the wafer between process chambers. In another embodiment, the purge ring is also stationary so as not to move during the rotation of the wafer from station to station. For example, during wafer rotation, the lift pin 890 moves upward through the movement space 895, raising the wafer 101 from the MCA 850 onto the top surface 870 of the pedestal by a distance sufficient to allow a paddle 225 of the rotation mechanism 220 to engage with the wafer 101 for the purpose of indexing the wafer to the appropriate station, thereby rotating the wafer from one station to another within a multi-station process chamber.

[0112] The base 140 includes a top surface 870 configured to support the wafer 101. A wafer support or minimum contact area (MCA) 850 can be used to improve the mating accuracy between surfaces (e.g., the top surface 870 and the bottom surface of the wafer 101) when high precision or tolerance is required and / or when minimal physical contact is desired to reduce the risk of defects. The base 140 may include a step (e.g., a downward step) around the base 140, and the top surface 875 of the step may be lower than the top surface 870 of the base used to support the wafer. An additional purge ring support 855 allows for the maintenance of a controlled distance between the purge ring 200 and the top surface 875 of the step when the purge ring is located on the purge ring support 855. Instead of the purge ring support 855, the purge ring 200 may be supported using an MCA located on the top surface 875 of the step of the base 140.

[0113] When the wafer 100 is supported by the MCA 850 and the purge ring 200 is supported by the purge ring support 855, in some embodiments, the edge region of the wafer 100 is positioned above the inner portion 209 of the purge ring 200. That is, the wafer 100 extends beyond the inner diameter 475 of the purge ring 200 and overlaps with the inner diameter 475. In one embodiment, the upper surface 879 of the purge ring 200, which is located on the stepped purge ring support 855, can be lower than the upper surface 870 of the pedestal used to support the wafer. The support of the purge ring at a distance from the upper surface 875 of the stepped support, as well as the support of the wafer at a distance from the upper surface 870 of the pedestal 140, is adjusted to create a vertical separation (e.g., 0.5 to 10 mm) between the edge region of the wafer and the inner portion 209 of the purge ring 200 (e.g., the upper surface 879 near the inner diameter 475). In this way, a flow of purge gas 860 is permitted to pass through the purge ring 200 (for example, through the outer channel 450, through the distribution volume 480 to the reservoir 510, and out through the outlet network) and through the space formed between the purge ring 200, the pedestal 140, and the wafer 1010. In particular, the purge gas follows the flow 860 around the inner portion 209 of the purge ring 200 and under the edge of the wafer 101, and as described above, collects in a volume near the wafer edge to dilute the process gas at the wafer edge. Specifically, the purge gas results in local dilution of the plasma sheath around the wafer edge to reduce charge accumulation at the wafer edge, thereby reducing the probability of discharge or arc discharge from the wafer to the ceramic pedestal during the process (e.g., PECVD, ALD, etc.). In another embodiment, the purge gas present around the edge of the wafer 101 generates a positive backflow, limiting deposition on the back surface of the wafer, particularly near the wafer edge (for example, minimizing plasma formation in the gap below the wafer edge and above the upper surface 879 of the purge ring).

[0114] Figure 9A shows a top view of a multi-station processing tool 250 with four processing stations according to one embodiment of the present disclosure, and illustrates a gas distribution system for distributing a gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) in a uniform gas flow to each base assembly of the stations. The multi-station processing tool 250 was previously introduced in Figure 2A, and the discussion of related components (e.g., similarly numbered components) related to Figure 2A will not be repeated for clarity and brevity, as they are related to Figure 9A.

[0115] As shown in Figure 9A, the gas supply structure 710 (e.g., a flexible conduit) is delivered through the internal station partition 211 of the process chamber 250, such as through a corresponding opening 210. In this way, the gas supply structure or conduit 710 is present at each station and can be accessed to supply gas to each of the stations. In particular, the gas supply structure 710 supplies gas to each of the stations via a corresponding access port (e.g., port 920) and corresponding supply diverters (e.g., 720-1, 720-2, 720-3, and 720-4). Each supply diverter is configured to supply gas to a corresponding purge ring of a corresponding pedestal assembly in the corresponding station, and each purge ring receives the gas at a corresponding purge inlet 420.

[0116] Figure 9B shows a top view of chamber inserts 910a and 910b of a multi-station processing tool (e.g., tool 250) having four processing stations, according to one embodiment of the present disclosure. As shown, the gas supply structure or conduit 710 of Figure 9A is supplied through openings 210 in the station bulkheads 211 of the multi-station processing tool or chamber. In particular, each of the station bulkheads 211 may include a pair of inserts 910a and 910b. Furthermore, each pair of inserts 910a and 910b is located in close proximity to the corresponding outer wall of the chamber. Also, each pair of inserts 910a and 910b includes openings 210 that can be used to supply the gas supply structure 710 between stations. Thus, the gas supply structure 710 is present in each of the stations for the purpose of gas supply.

[0117] Figure 9C shows bottom views of chamber inserts 910a and 910b shown in Figure 9B of a multi-station processing tool (e.g., tool 250) having four processing stations, according to one embodiment of the present disclosure. In the bottom view of the chamber insert in Figure 9C, the openings 210 in the station partition 211 are exposed. As previously stated, the gas distribution structure or conduit 710 is delivered through the openings 210 in the station partition 211 of the multi-station chamber 250 (e.g., through the openings 210 of the chamber inserts 910a and 910b).

[0118] In particular, the gas distribution structure or conduit 710 is configured to distribute the gas uniformly to each base assembly of a plurality of stations with an even gas flow. As shown, a portion of the gas distribution structure 710 contained within a station may include one or more compression fittings 925 joining two different metal pieces of the conduit, and an access port 920 configured to supply the gas to the corresponding station. For example, Figure 9C shows the gas distribution structure 710 being delivered through station 1, and the access port 920 is connected to the gas distribution structure 710 and the purge inlet 420 of the purge ring 200 through a branch 720-1, etc. The purge ring 200 is configured to supply a radially symmetric and uniform gas flow from the outlet network (e.g., the outlet port), as described above, so that the purge gas is evenly distributed at the wafer edge during processing.

[0119] Figure 10 shows a control module 1000 for controlling the system described above. For example, the control module 1000 may include a processor, memory, and one or more interfaces. The control module 1000 may be used to control devices in the system based in part on sensed values. As just one example, the control module 1000 may control one or more of the valve 1002, filter heater 1004, pump 1006, gas distribution system 700, and other devices 1008 based on sensed values ​​and other control parameters. As just one example, the control module 1000 receives sensed values ​​from a pressure gauge 1010, a flow meter 1012, a temperature sensor 1014, and / or other sensors 1016. The control module 1000 can also be used to control process conditions during precursor feeding and film deposition. The control module 1000 typically includes one or more memory devices and one or more processors.

[0120] The control module 1000 can control the activity of the precursor feeding system and the deposition apparatus. The control module 1000 executes a computer program that includes a set of instructions for controlling process timing, feeding system temperature, pressure difference across filters, valve position, gas mixing, chamber pressure, chamber temperature, substrate temperature, RF power level, substrate chuck or pedestal position, purge gas feeding, and other parameters of a particular process. The control module 1000 can also monitor the pressure difference and automatically switch the feeding of the steam precursor from one or more paths to one or more other paths. In some embodiments, other computer programs stored in a memory device associated with the control module 1000 can be used.

[0121] Typically, a user interface is associated with the control module 1000. The user interface may include a display 1018 (e.g., a display screen and / or graphical software display of the device and / or process conditions) and user input devices 1020 such as a pointing device, keyboard, touchscreen, or microphone.

[0122] Computer programs for controlling the feeding, deposition, and other processes of precursors in a process sequence can be written in any conventional computer-readable programming language (e.g., assembly language, C, C++, Pascal, Fortran, etc.). The compiled object code or script is executed by the processor to perform the tasks identified by the program.

[0123] The control module parameters relate to process conditions such as, for example, the filter pressure difference, process gas composition and flow rate, purge gas flow rate, plasma conditions such as temperature, pressure, RF power level and low-frequency RF frequency, cooling gas pressure, and chamber wall temperature.

[0124] System software can be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control the operation of chamber components necessary to perform the process of the present invention, including the supply of purge gas. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, purge gas control code, pressure control code, heater control code, and plasma control code.

[0125] The substrate positioning program may include program code for controlling chamber components used to load the substrate onto a pedestal or chuck and to control the distance between the substrate and other parts of the chamber, such as the gas inlet and / or target. The process gas control program may include code for controlling the gas composition and flow rate to stabilize the pressure in the chamber, and optionally, code for flowing gas into the chamber before deposition. The purge gas control program may include code for controlling the supply of purge gas. The filter monitoring program may include code for comparing the measured difference with a predetermined value and / or for switching paths. The pressure control program may include code for controlling the pressure in the chamber, for example, by adjusting the throttle valve of the chamber's exhaust system. The heater control program may include code for controlling the current to the heating unit for heating components of the precursor supply system, the substrate, and / or other parts of the system. Alternatively, the heater control program may control the supply of a heat transfer gas (such as helium) to the substrate chuck.

[0126] Examples of sensors that can be monitored during deposition include, but are not limited to, a mass flow control module, pressure sensors such as a pressure manometer 1010, thermocouples located in the feeding system, pedestal, or chuck, and a state sensor 1020. Appropriately programmed feedback and control algorithms can be used in conjunction with data from these sensors to maintain desired process conditions. The above describes the implementation of embodiments of the present disclosure in single or multi-chamber semiconductor processing tools.

[0127] In some embodiments, the controller is part of a system, and such a system may be part of the examples described above. Such a system may comprise semiconductor processing equipment including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a substrate pedestal, gas flow system, etc.). These systems may be integrated with electronic equipment for controlling system operation before, during, and after processing of semiconductor wafers or substrates. Such electronic equipment may be referred to as a “controller” and may control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein. Such processes include supplying processing gases, supplying purge gases, temperature setting (e.g., heating and / or cooling), pressure setting, vacuum setting, power setting, radio frequency (RF) generator setting, RF matching circuit setting, frequency setting, flow rate setting, fluid supply setting, position and operation setting, loading and unloading of substrates to and from tools and other transfer tools connected to or interlocked with a particular system, and / or loading and unloading of substrates to and from a load lock.

[0128] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers that execute program instructions (e.g., software). Program instructions are instructions communicated to the controller in the form of various individual settings (or program files) that may define operating parameters for performing a particular process on or for a semiconductor substrate or for a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to realize one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0129] In some embodiments, the controller may be part of a computer integrated with or coupled to the system, or otherwise networked to the system, or coupled to such a computer, or a combination thereof. For example, the controller may be in the “cloud,” or all or part of the fab host computer system. This enables remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of fabrication operations, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of the current process, set processing steps following the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the internet.

[0130] The remote computer may include a user interface that enables the entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to work with or control. Thus, as described above, the controller may be distributed, for example, by comprising one or more separate controllers that are networked together and cooperate toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such a purpose would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits that are remotely located (e.g., at the platform level or as part of a remote computer) and combined to control the processes in the chamber.

[0131] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, plasma-enhanced chemical vapor deposition (PECVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, tracking chambers or modules, and any other semiconductor processing systems that may be used in connection with or for the fabrication and / or manufacture of semiconductor wafers.

[0132] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used for material handling to load and unload wafer containers to and from tool locations and / or load ports within the semiconductor manufacturing plant.

[0133] The foregoing description of embodiments is provided for illustrative and explanatory purposes only. It is not intended to be exhaustive or to limit the disclosure. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment and are interchangeable and can be used in selected embodiments, even if not specifically illustrated or described, where applicable. Furthermore, these may be modified in many ways. Such modifications should not be considered deviations from the disclosure, and all such modifications are intended to be within the scope of the disclosure.

[0134] While the embodiments described above have been described in some detail for clearer understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. Therefore, these embodiments should be considered illustrative rather than restrictive, and the embodiments should not be limited to the details described herein, but may be modified within the scope of the claims and equivalents.

Claims

1. It is purging, A supply port configured to accept gas, An external channel connected to the aforementioned supply port, An outlet network configured for the outlet flow of the gas, located close to the inner diameter of the purge ring, A plurality of channels configured to allow the gas to flow radially from the outer channel to the outlet network, A plurality of passages configured to reduce the radial gas flow between the outer channel and the outlet network, Equipped with, The plurality of channels and the plurality of passages are configured to provide a uniform pressure of the outlet flow of the gas over the entire circumference of the outlet network. Purge.

2. A purging ring according to claim 1, The outer channel is configured to achieve pressure equilibrium before radial flow of the gas to the outlet network occurs. Purge.

3. A purging ring according to claim 1, A distribution volume connecting the outer channel and the outlet network, wherein the distribution volume includes the plurality of channels and the plurality of passages. Furthermore, it features a purging ring.

4. A purging ring according to claim 3, A reservoir configured to connect the distribution volume to the outlet network and to achieve pressure equilibrium before radial flow of the gas to the outlet network occurs. Furthermore, it features a purging ring.

5. A purging ring according to claim 1, The first radial width of the first channel centered at a first radial distance from the purge ring inlet is greater than the second radial width of the second channel centered at a second radial distance closer to the purge ring inlet. Purge.

6. A purging ring according to claim 1, The first radial width of the first passage centered at a first radial distance from the purge ring inlet is smaller than the second radial width of the second passage centered at a second radial distance closer to the purge ring inlet. Purge.

7. A purging ring according to claim 1, One of the aforementioned multiple passages is a purging ring comprising a porous medium.

8. A purging ring according to claim 1, The outlet network includes an array of outlet openings, each outlet opening configured to provide a corresponding portion of the outlet flow of the gas, in a purging ring.

9. A purging ring according to claim 8, The outlet openings in the array of outlet openings are purging rings distributed symmetrically around the circumference of the outlet network.

10. A purging ring according to claim 8, The array of outlet openings is a purge ring configured on the bottom surface of the purge ring.

11. A purging ring according to claim 1, The exit network includes a purging mechanism comprising one or more continuous channels configured around the circumference.

12. A purging ring according to claim 11, A purging ring comprising at least one continuous channel containing a porous medium.

13. A base assembly for a process chamber, A base for supporting the circuit board, A purge ring configured to be placed around a base, wherein the purge ring is A supply port configured to accept gas, An external channel connected to the aforementioned supply port, An outlet network configured for the outlet flow of the gas, located close to the inner diameter of the purge ring, A plurality of channels configured to allow the gas to flow radially from the outer channel to the outlet network, A plurality of passages configured to reduce the radial gas flow between the outer channel and the outlet network, Includes, The plurality of channels and the plurality of passages are configured to provide a uniform pressure of the outlet flow of the gas over the entire circumference of the outlet network. Purge ring, A base assembly comprising:

14. A base assembly according to claim 13, The purge ring is configured to be located beneath the substrate in a base assembly.

15. A process chamber according to claim 13, In the purging, the outer channel is configured to achieve pressure equilibrium before radial flow of the gas to the outlet network occurs. Process chamber.

16. A process chamber according to claim 13, The purging ring comprises a distribution volume connecting the outer channel and the outlet network, the distribution volume including the plurality of channels and the plurality of passages, Process chamber.

17. A process chamber according to claim 16, The purge ring further comprises a reservoir configured to connect the distribution volume to the outlet network and to achieve pressure equilibrium before radial flow of the gas to the outlet network occurs. Process chamber.

18. A process chamber according to claim 13, In the purging ring described above, the first radial width of the first channel centered at a first radial distance from the purging ring inlet is greater than the second radial width of the second channel centered at a second radial distance closer to the purging ring inlet. Process chamber.

19. A process chamber according to claim 13, In the purging ring, the first radial width of the first passage centered at a first radial distance from the purging ring entrance is smaller than the second radial width of the second passage centered at a second radial distance closer to the purging ring entrance. Process chamber.

20. A process chamber according to claim 13, In the purging, one of the multiple passages comprises a porous medium. Process chamber.

21. A process chamber according to claim 13, In the purging process chamber, the outlet network includes an array of outlet openings, each outlet opening configured to provide a corresponding portion of the outlet flow of the gas.

22. A process chamber according to claim 21, In the purging process chamber, the outlet openings in the array of outlet openings are distributed symmetrically around the circumference of the outlet network.

23. A process chamber according to claim 21, In the purging ring, the array of outlet openings is configured on the bottom surface of the purging ring, forming a process chamber.

24. A process chamber according to claim 13, In the purging, the exit network is a process chamber comprising one or more continuous channels configured around the circumference.

25. A process chamber according to claim 16, A process chamber having at least one continuous channel comprising a porous medium.

26. It is a process chamber, Multiple stations, each station including a base assembly, each base assembly is A base for supporting the circuit board, A purge ring configured to be placed around the base, wherein the purge ring is A supply port configured to accept gas, An external channel connected to the aforementioned supply port, An outlet network configured for the outlet flow of the gas, located close to the inner diameter of the purge ring, A plurality of channels configured to allow the gas to flow radially from the outer channel to the outlet network, A plurality of passages configured to reduce the radial gas flow between the outer channel and the outlet network, Includes, The plurality of channels and the plurality of passages are configured to provide a uniform pressure of the outlet flow of the gas over the entire circumference of the outlet network. Purge ring, A gas distribution system for distributing the gas to each base assembly of the plurality of stations in a uniform gas flow, Multiple stations including A process chamber, including a process chamber.

27. A process chamber according to claim 26, A gas supply structure that is delivered through a station partition of the process chamber, the gas supply structure supplying the gas to each of the plurality of stations via a corresponding access port in the gas supply structure for connecting the gas supply structure to a corresponding base assembly of a corresponding station via a corresponding conduit, A flow resistor in the corresponding conduit adjusts the gas flow to the corresponding station so that the gas flow to each of the plurality of stations is approximately equal. A process chamber further equipped with these features.

28. A process chamber according to claim 27, The process chamber includes a first flow resistor and a second flow resistor configured within the corresponding conduit, wherein the at least one flow resistor comprises a first flow resistor and a second flow resistor.

29. A process chamber according to claim 26, The process chamber is configured such that the purge ring is located beneath the substrate.

30. A process chamber according to claim 26, In the purging, the outer channel is configured to achieve pressure equilibrium before radial flow of the gas to the outlet network occurs. Process chamber.

31. A process chamber according to claim 26, The purging ring comprises a distribution volume connecting the outer channel and the outlet network, the distribution volume including the plurality of channels and the plurality of passages, Process chamber.

32. A process chamber according to claim 31, The purge ring further comprises a reservoir configured to connect the distribution volume to the outlet network and to achieve pressure equilibrium before radial flow of the gas to the outlet network occurs. Process chamber.

33. A process chamber according to claim 26, In the purging ring described above, the first radial width of the first channel centered at a first radial distance from the purging ring inlet is greater than the second radial width of the second channel centered at a second radial distance closer to the purging ring inlet. Process chamber.

34. A process chamber according to claim 26, In the purging ring, the first radial width of the first passage centered at a first radial distance from the purging ring entrance is smaller than the second radial width of the second passage centered at a second radial distance closer to the purging ring entrance. Process chamber.

35. A process chamber according to claim 26, In the purging, one of the multiple passages comprises a porous medium. Process chamber.

36. A process chamber according to claim 26, In the purging process chamber, the outlet network includes an array of outlet openings, each outlet opening configured to provide a corresponding portion of the outlet flow of the gas.

37. A process chamber according to claim 36, In the purging process chamber, the outlet openings in the array of outlet openings are distributed symmetrically around the circumference of the outlet network.

38. A process chamber according to claim 36, In the purging ring, the array of outlet openings is configured on the bottom surface of the purging ring, forming a process chamber.

39. A process chamber according to claim 26, In the purging, the exit network is a process chamber comprising one or more continuous channels configured around the circumference.

40. A process chamber according to claim 39, A process chamber having at least one continuous channel comprising a porous medium.

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