Film deposition apparatus, control method for film deposition apparatus, film deposition method, method for manufacturing articles, control program, and recording medium

Abstract

This reduces the likelihood of water particles adsorbing onto the target surface. [Solution] A film deposition apparatus comprising a chamber in which a target is placed, and a shielding portion capable of covering a part of the target, wherein the shielding portion covers a part of the target while the inside of the chamber is under reduced pressure.

Description

Technical Field

[0001] The present invention relates to a film-forming technique.

Background Art

[0002] As a method for forming a compound film such as a metal oxide film on a substrate, for example, sputtering is utilized. Patent Document 1 discloses a sputtering apparatus that blocks sputtered particles from reaching the substrate by a shutter until plasma is generated by a target as a cathode and stabilized.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the configuration described in Patent Document 1, water particles generated by adiabatic expansion under reduced pressure in the film-forming chamber may adsorb on the surface of the target. If the adsorption of water particles that are likely to be charged progresses on the surface of the target, there is a possibility that stable plasma will not be generated immediately after the completion of decompression.

[0005] The present invention reduces the possibility of water particles adsorbing on the surface of the target.

Means for Solving the Problems

[0006] A film-forming apparatus is adopted, which includes a chamber in which a target is disposed and a shielding portion capable of covering a part of the target, and covers a part of the target with the shielding portion while the inside of the chamber is under reduced pressure.

Effects of the Invention

[0007] According to the present invention, it is possible to reduce the possibility of water particles adsorbing onto the target surface. [Brief explanation of the drawing]

[0008] [Figure 1] This is a diagram illustrating a sputtering apparatus 100 according to an embodiment. [Figure 2] This is a diagram illustrating unit 2 according to an embodiment. [Figure 3] This figure shows the target 21, anode 23, and metal member 24 according to the embodiment. [Figure 4] This is a control flowchart according to the embodiment. [Figure 5] This is a diagram illustrating a sputtering apparatus 100 according to an embodiment. [Figure 6] This is a diagram illustrating the shutter 16 according to the embodiment. [Figure 7] This is a control flowchart according to the embodiment. [Figure 8] This graph shows the experimental results for the examples and comparative examples. [Modes for carrying out the invention]

[0009] The embodiments for carrying out the present invention will be described below with reference to the examples shown in the attached drawings. Note that the embodiments described below are merely examples, and for example, the detailed configuration can be appropriately modified by those skilled in the art without departing from the spirit of the present invention. Furthermore, the numerical values ​​mentioned in these embodiments are for reference only and do not limit the present invention. In the following drawings, the arrows X, Y, and Z indicate the overall coordinate system of the system. Generally, the XYZ 3D coordinate system represents the world coordinate system of the entire installation environment. In addition, a local coordinate system may be used as appropriate for control purposes, etc.

[0010] (First Embodiment) Figure 1 is a schematic diagram of a sputtering apparatus 100, which is a film deposition apparatus according to this embodiment. In this embodiment, the sputtering apparatus 100 is an example of a magnetron sputtering apparatus, which is one of the sputtering methods. The sputtering apparatus 100 forms a compound film, for example an insulating thin film, on the surface of a substrate 3, which is the object to be coated, by reactive sputtering. By forming a thin film on the surface of the substrate 3 with the sputtering apparatus 100, an article such as a final product or an intermediate product is manufactured. The substrate 3 is, for example, a lens substrate, and the film formed is, for example, an anti-reflective film. A lens is manufactured as an article by the sputtering apparatus 100. In this way, by using the sputtering apparatus 100 as a manufacturing apparatus and the above-described process as a manufacturing method, it is possible to manufacture articles.

[0011] The sputtering apparatus 100 comprises a chamber 1, which is an example of a vacuum vessel; a unit (cathode section) 2 on which a target 21, which functions as a cathode, is installed; and a shutter 16, which serves as a shielding section covering the target 21. Furthermore, it includes a holder 5 for holding the substrate 3, a support mechanism 4 for supporting the holder 5, and a rotational lifting mechanism 6. Inside the chamber 1, a space that becomes the film deposition chamber R1 is defined.

[0012] Unit 2, holder 5, and support mechanism 4 are located inside chamber 1, i.e., in the film deposition chamber R1. The target 21 is a flat plate-shaped member containing the film deposition material. Unit 2 has a unit body 20, which is an example of an installation section. The target 21 is fixedly installed on the unit body 20. The unit body 20 comprises a plurality of metal parts made of metal such as stainless steel.

[0013] The support mechanism 4 is installed on the top plate of the chamber 1 and supports the holder 5 so that the base material 3 is parallel to the top plate. By adopting the configuration in which the base material 3 is supported by the support mechanism 4 via the holder 5, the following operations become possible. That is, the base material 3 is held by the holder 5 in advance outside the chamber 1, and the holder 5 together with the base material 3 is placed in a load lock (not shown). The holder 5 together with the base material 3 is transported from the load lock into the chamber 1 through a transport port (not shown) by a transport mechanism (not shown), for example, a robot arm, and the holder 5 is supported by the support mechanism 4. Since the above operations are possible, the operation of attaching the base material 3 to the support mechanism 4 becomes easy. Further, the chamber 1 is provided with a support state detection unit 30 for detecting the support state of the holder 5.

[0014] Note that the support mechanism 4 is a mechanism that supports the base material 3 via the holder 5, but is not limited thereto, and may be a mechanism that directly supports the base material 3. Further, the support mechanism 4 is connected to the rotary lifting mechanism 6 and can rotate about the rotation axis P and move up and down in a direction perpendicular to the base material support surface of the holder 5. In addition, in order to assist the support operation of the holder 5, an operation of swinging the support mechanism 4 may be added to the rotary lifting mechanism 6.

[0015] A deposition prevention plate (not shown) is installed in the chamber 1 so as to cover the inner wall. The deposition prevention plate (not shown), the base material 3, the holder 5, the support mechanism 4, and the plasma emission monitor 11 are set to a floating potential. The gas supply line 8 is set to a ground potential in this embodiment. However, the gas supply line 8 is not limited to the ground potential and may be set to a floating potential.

[0016] In chamber 1, a door 17 is installed to replace the target 21 and a sputtering shield (not shown). Further, in chamber 1, an opening / closing state detection unit 18 for detecting the opening / closing state of the door 17, a pressure detection unit 19 for detecting the pressure in the film formation chamber R1, and a support state detection unit 30 for detecting the support state of the holder 5 on the support mechanism 4 are installed. In some cases, the opening / closing state detection unit 18 is referred to as the first detection unit, and the support state detection unit 30 is referred to as the second detection unit. Information regarding the opening / closing state of the door 17 detected by the opening / closing state detection unit 18, information regarding the pressure detected by the pressure detection unit 19, and further information regarding the support state of the holder 5 are transmitted to the control device 10. That is, the control device 10 acquires the opening / closing state of the door by the opening / closing state detection unit 18, also acquires the pressure by the pressure detection unit 19, and further acquires the support state of the holder 5 by the support state detection unit 30.

[0017] The shutter 16 is provided in the vicinity of the target 21 so as to cover the target 21. Also, the shutter 16 is connected to a mechanism (not shown), for example, a linear motion mechanism. With such a mechanism, it is possible to expose the target 21 to the film formation chamber R1. The distance between the surface 211 of the target 21 and the shutter 16 in the Z1 and Z2 directions is preferably 20 mm or more and 150 mm or less, although it also depends on the magnetic field (magnetic flux density) formed by the magnet 22. The potential of the shutter 16 is a floating potential. However, the potential of the shutter 16 is not limited to the floating potential and may be a ground potential.

[0018] Furthermore, the sputtering apparatus 100 includes a power supply 7 for supplying power to the unit 2, a gas supply line 8 for supplying the gas necessary for film formation, and an exhaust apparatus 9 connected to the chamber 1. Further, the sputtering apparatus 100 includes a control device 10 for controlling the operation of each mechanism of the sputtering apparatus 100 and a plasma emission monitor 11. The power supply 7 is preferably a DC power supply, and among the DC power supplies, it may be a power supply device that continuously supplies current or a power supply device (DC pulse power supply) that supplies a pulse current.

[0019] The control device 10 is comprised of a computer. The control device has a CPU (Central Processing Unit), ROM (Read Only Memory), and RAM (Random Access Memory). It also includes a communication interface (hereinafter referred to as "I / F"). The CPU, which is a processor, is an example of a control unit and functions as a hardware component, specifically as the determination unit 101, which will be described later. The ROM stores a program. The program is a program that causes the computer, i.e., the CPU, to execute the output of commands for controlling each mechanism. The RAM is used to temporarily store data such as programs for controlling the entire system, execution timings for tasks in each controlled object, and control commands.

[0020] The CPU acquires data transmitted from sensors installed in each mechanism by receiving it via an interface. The CPU may also transmit commands, as control target values, via the interface to other control devices that control each controlled object, based on programs and data input by the user. Each mechanism is equipped with a control device consisting of a computer including a microprocessor. The main control device outputs commands to each control device, while the actual control is performed by sub-control devices installed in each device. In other words, the sputtering apparatus 100 may be controlled by at least one control device. Alternatively, the main control device alone may control each mechanism. Communication between the main control device and the sub-controlled objects and control devices can be wired or wireless.

[0021] In this embodiment, the program is recorded in ROM, but this is not the only way to do so. The program may be recorded on any non-temporary recording medium that is readable by a computer. Examples of recording media that can be used to supply the program to the computer include flexible disks, hard disks, optical disks, magneto-optical disks, magnetic tapes, non-volatile memory, and the like.

[0022] The plasma emission monitor 11 includes a detection unit 111, an optical fiber 112, and a spectrometer 113. The detection unit 111 detects plasma emission and is located near the surface 211 of the target 21. The plasma light detected by the detection unit 111 propagates through the optical fiber 112. The spectrometer 113 spectrally separates the plasma light acquired from the optical fiber 112 into a line spectrum. Information regarding the emission intensity of a predetermined wavelength detected by the spectrometer 113 is transmitted to the control device 10. That is, the control device 10 acquires the emission intensity of wavelengths related to the target 21 and the emission intensity related to the process gas using the spectrometer 113.

[0023] The control device 10 uses the acquired emission intensity value, or the ratio of emission intensities of two wavelengths selected from the acquired wavelengths, as a control value, and can generate a control signal at each acquisition interval to stabilize this control value. This control signal is transmitted to the mass flow controller 82 of the reactive gas in the gas supply line 8, and the mass flow controller 82 adjusts the flow rate of the reactive gas.

[0024] Furthermore, the control device 10 can acquire voltage information from the power supply 7 during plasma generation, and can use the voltage as a control value to generate a control signal at each acquisition interval to stabilize that control value. This control signal is transmitted to the reactive gas mass flow controller 82, and the flow rate of the reactive gas is adjusted by the mass flow controller 82.

[0025] The control algorithm of the control device 10 described above is executed as proportional-integral-derivative (PID) control. Furthermore, the flow rate of the process gas during plasma generation, the rotational speed and vertical position of the holder 5 by the rotary lifting mechanism 6, and the exhaust speed of the exhaust device 9 can also be set via the control device 10.

[0026] The determination unit 101 determines whether the information regarding the open / closed state of the door 17, the pressure, and the support state of the holder 5 acquired by the control device 10 meets predetermined criteria. Examples of these criteria include the information regarding the open / closed state of the door 17 acquired from the open / closed state detection unit 18 indicating that it is in the closed state, and the pressure information acquired from the pressure detection unit 19 being less than or equal to a predetermined set value P0. Furthermore, the information regarding the support state of the holder 5 acquired from the support state detection unit 30 indicates that it is in the supported state. If these criteria are met, the control device 10 transmits the information to the shutter 16 mechanism (not shown) and the holder 5 transport mechanism (not shown). In this way, the position of the shutter 16 is controlled by the mechanism (not shown) that receives the operation signal. That is, the operation of the shutter 16 is controlled by the control device 10 based on the determination information from the determination unit 101.

[0027] Figure 2 is a diagram illustrating the unit 2 and target 21 shown in Figure 1. The unit body 20 has a main surface 201 to which the target 21 is attached. The surface 211 of the target 21, which is the surface to be sputtered, is positioned parallel to the main surface 201. The direction perpendicular to the surface 211, i.e., perpendicular to the main surface 201, is defined as the Z1 direction. The Z1 direction is the normal direction of the surface 211 and the normal direction of the main surface 201. The direction opposite to the Z1 direction is defined as the Z2 direction. The unit body 20 has a recess 202 that is recessed in the Z2 direction relative to the main surface 201. The target 21 has an opening 212 formed at a position corresponding to the recess 202 when viewed in the Z1 or Z2 direction. The opening 212 is an example of a first opening. That is, the target 21 is positioned on the main surface 201 such that the opening 212 corresponds to the recess 202 when viewed in the Z1 and Z2 directions. The opening 212 is formed in the central part of the target 21.

[0028] Unit 2 is positioned (in space) corresponding to the opening 212 of the target 21 when viewed in the Z1 or Z2 direction, and has an anode 23 and a metal member 24 arranged in the unit body 20 in a non-contact state with each other. In the unit body 20, the non-contact state between the anode 23 and the metal member 24 reduces the possibility of a short circuit between the anode 23 and the metal member 24, and allows the anode 23 and the metal member 24 to be maintained at different potentials. In the first embodiment, the target 21 which acts as the cathode, the anode 23, and the metal member 24 are in a non-contact state with each other, and the target 21, the anode 23, and the metal member 24 can be maintained at different potentials with each other.

[0029] Both the anode 23 and the metal member 24 are made of metal, such as stainless steel. Since the anode 23 is positioned at a location corresponding to the aperture 212 of the target 21 which serves as the cathode, the diffusion of the generated plasma away from the vicinity of the target 21 is suppressed, and a plasma with a uniform distribution can be generated near the target 21.

[0030] The power supply 7, as described in Figure 1, is connected to both the target 21 and the anode 23. Specifically, the anode 23 is electrically connected to the positive (+) terminal of the power supply 7, and the target 21 is electrically connected to the negative (-) terminal of the power supply 7. This supplies power to the target 21 and the anode 23 to generate plasma.

[0031] Furthermore, unit 2 has a magnet 22 positioned below the target 21 in the unit body 20. The magnet 22 is composed of multiple magnet members arranged with different polarities so that a magnetic field H is formed along the surface 211 of the target 21 in a direction from above the target 21 toward the opening 212, i.e., the recess 202. The magnetic field H formed by the magnet 22 prevents electrons in the plasma from diffusing from the vicinity of the surface 211 of the target 21 and keeps them near the surface 211, making it possible to perform sputtering efficiently at a low voltage. In addition, since the magnetic field H along the surface 211 of the target 21 is oriented to converge toward the anode 23, electrons can be efficiently introduced into the anode 23.

[0032] Furthermore, unit 2 is assumed to have a cooling structure (not shown) that cools the target 21 from the back surface in order to suppress the temperature of the surface 211 of the target 21 from rising above a predetermined temperature due to the plasma generated on the surface 211 of the target 21.

[0033] To raise the potential of anode 23 above ground potential, a resistor 13 connected to ground 15 is connected to the wire 12 connecting anode 23 to power supply 7. In this way, anode 23, which is connected to the positive terminal of power supply 7, is electrically connected to ground 15 via resistor 13, so the potential of anode 23 becomes a positive potential higher than ground potential.

[0034] Depending on the magnetic field formed by the magnet 22, i.e., the magnetic flux density, and the sputtering conditions, the electrical resistance value Ra of the resistor 13 is preferably 40kΩ ≤ Ra ≤ 220kΩ. In other words, the electrical resistance value Ra is preferably 40kΩ or more and 220kΩ or less. Furthermore, the electrical resistance value Ra is more preferably 45kΩ or more and 105kΩ or less.

[0035] When performing reactive sputtering, the target 21 is a metal target. Process gas and reactive gas for sputtering are supplied from the gas supply line 8. The supply flow rates of the process gas and reactive gas are adjusted by mass flow controllers 81 and 82, respectively, and after mixing, they are supplied into the chamber 1 from the gas supply pipe 83. Note that the gas supply pipe 83 is not limited to a structure that mixes the process gas and reactive gas, but may also be a structure that supplies the process gas and reactive gas separately.

[0036] The process gas can be any gas that can become positive ions by colliding with electrons in the plasma and ionizing, and can sputter a metal target; for example, argon (Ar) gas is preferred. The reactive gas is supplied when performing reactive sputtering in reactive (oxide) mode or transition mode. For example, when performing reactive sputtering while oxidizing the surface 211 of a metal target 21, oxygen (O2) gas is used as the reactive gas.

[0037] Figure 3 shows the target 21, anode 23, and metal member 24 according to this embodiment. Figure 3(a) is a perspective view of the target 21, anode 23, and metal member 24 according to this embodiment. Figure 3(b) is a perspective view of the cross-section of the target 21, anode 23, and metal member 24 cut along the line IIIB-IIIB in Figure 3(a).

[0038] As shown in Figures 3(a) and 3(b), an opening 212 is defined in the center of the target 21. The target 21 is formed in an oval shape when viewed in the Z1 or Z2 direction. If the target had a shape with corners, when an insulating metal oxide film is deposited on the corners of the target, the metal oxide film is likely to ionize and become charged, causing arcing. In contrast, in this embodiment, the inner and outer circumferences of the target 21 have a shape that eliminates corners. By shaping the target 21 as described above, arcing caused by the formation of an insulating metal oxide film can be prevented. Although the target 21 is oval-shaped, it is not limited to this, and could, for example, be ring-shaped.

[0039] The anode 23 is a plate-shaped metal and is placed in a recess 202 of the unit body 20. The metal member 24 is in a non-contact state with the anode 23 and the target 21 so that it is at a different potential from the anode 23 and the target 21. Specifically, the metal member 24 is at ground potential or floating potential. The metal member 24 includes a shield portion 241 that is positioned opposite the anode 23 in the Z1 or Z2 direction. Since the anode 23 and the metal member 24, i.e., the shield portion 241, are spaced apart from each other in the Z1 or Z2 direction, they are in a non-contact state and are maintained at different potentials. That is, the anode 23 is maintained at the anode potential, i.e., a positive potential, and the metal member 24 is maintained at ground potential or floating potential, which is lower than the anode potential. Note that when the metal member 24 is at floating potential, electrons from the plasma are supplied to the metal member 24, so it becomes a negative potential lower than ground potential.

[0040] Since the shield portion 241 of the metal member 24 is positioned at a distance from the anode 23 in the Z1 direction, the anode 23 is shielded by the shield portion 241, and the formation of an insulating metal oxide film on the anode 23 is suppressed. This prevents the potential of the anode 23, i.e., the anode potential, from disappearing. In other words, a decrease in the current flowing through the anode 23 is prevented. In this way, since the formation of a metal oxide film on the anode 23 is prevented, plasma can be generated stably over a long period of time.

[0041] In this embodiment, the shield portion 241 has a plurality (e.g., two) of openings 242, with at least one second opening. Each opening 242 is smaller than the opening 212. This makes it easier for electrons in the plasma generated near the target 21, which is the cathode, to flow to the anode 23 through each opening 242 of the shield portion 241.

[0042] In Figure 3(a), each aperture 242 is formed in a semicircular shape, but the shape is not limited to this. Each aperture 242 may have any shape that allows electrons to pass through, for example, it may be circular or rectangular. Depending on the magnetic field (magnetic flux density) formed by the magnet 22 and the sputtering conditions, if each aperture 242 is semicircular or circular, it is preferable that the radius of each aperture 242 be 7.5 mm or more. If the aperture 242 is rectangular, it is preferable that the shorter side of each aperture 242 be 15 mm or more.

[0043] In this embodiment, the shield portion 241 is positioned at the same height as the target 21 in the Z1 or Z2 direction. As a result, the anode 23 is effectively shielded by the shield portion 241, effectively preventing the formation of a metal oxide film on the anode 23.

[0044] Next, a film formation method, i.e., a method for manufacturing an article, using the sputtering apparatus 100 in this embodiment to form a compound film on the surface of a substrate 3 will be described. Figure 4 is a control flowchart in this embodiment. The control flowchart shown in Figure 4 is executed in coordination with the CPUs of each control device via communication and / or in coordination with the work of an operator.

[0045] As shown in Figure 4, when forming a compound film on the substrate 3, the user first opens the door 17 of the chamber 1 and places the target 21 on the unit body 20 of the unit 2, starting from step S1. In this embodiment, the user performs the placement, but the placement work may also be performed by a robot or other mechanical device.

[0046] Next, in step S2, when the door 17 of the chamber 1 of the sputtering apparatus 100 is closed, the open / closed state detection unit 18 sends a signal regarding the open / closed state of the door 17 to the control device 10. In step S2, a signal corresponding to the closed state is sent to the control device 10.

[0047] Next, in step S3, the control device 10, having acquired a closed state signal, determines in the determination unit 101 whether or not the determination criteria are met. In step S3, the determination criterion is whether or not a closed state signal has been transmitted from the open / closed state detection unit 18. If the control device 10 determines in the determination unit 101 that a closed state signal has been transmitted from the open / closed state detection unit 18, it proceeds from step S3:YES to step S4. If a closed state signal has not been transmitted from the open / closed state detection unit 18, it proceeds from step S3:NO and repeats the determination process in step S3.

[0048] Next, in step S4, the control device 10 transmits a signal to an unshown mechanism that operates the shutter 16 to operate the shutter 16. The unshown mechanism then moves the shutter 16 to the closed position, that is, to a position that covers the target 21 relative to the film deposition chamber R1. In other words, it moves it to a position that covers the target 21 relative to the exhaust device 9 or the support mechanism 4 that supports the substrate 3. Whether or not the shutter 16 has moved to the closed position may be determined based on the sensor value obtained by providing an unshown sensor on the shutter 16, or it may be determined by sending a signal and waiting for a predetermined time to elapse.

[0049] Next, in step S5, after the shutter 16 moves to the closed position, the exhaust device 9 reduces the pressure in the deposition chamber R1. The pressure value inside the deposition chamber R1 is detected by the pressure detection unit 19 and transmitted to the control device 10.

[0050] Next, in step S6, the control device 10 determines in the determination unit 101 whether the pressure value obtained by the pressure detection unit 19 is less than or equal to the set value P1. In step S6, the determination criterion is whether or not the pressure value transmitted from the pressure detection unit 19 is less than or equal to the set value P1. If the pressure value obtained by the pressure detection unit 19 is less than or equal to the set value P1, the control device 10 proceeds from step S6:YES to step S7. If the pressure value obtained by the pressure detection unit 19 is not less than or equal to the set value P1, the control device 10 returns to step S5 from step S6:NO and repeats the depressurization of the film deposition chamber R1 by the exhaust device 9.

[0051] Next, in step S7, a signal is sent to an unshown transport mechanism for transporting the base material 3 together with the holder 5, and the unshown transport mechanism transports the base material 3 together with the holder 5.

[0052] Next, in step S8, the user transports the base material 3 together with the holder 5 from the load lock into the chamber 1 via a transport port (not shown), and causes the support mechanism 4 to support the holder 5. In this embodiment, the user causes the support mechanism 4 to support the holder 5, but this is not limited to this, and the support work may be performed by, for example, a robot or mechanical device. The support state of the holder 5 is detected by the support state detection unit 30 and transmitted to the control device 10.

[0053] Next, in step S9, the control device 10 determines whether or not it has received a signal from the support state detection unit 30 indicating that the support of the holder 5 to the support mechanism 4 is complete. In step S9, the determination criterion is whether or not a signal indicating that support is complete has been transmitted from the support state detection unit 30. The control device 10, in its determination unit 101, determines that if a signal indicating that support is complete has been transmitted from the support state detection unit 30, it proceeds to step S10 from step S9:YES. If a signal indicating that support is complete has not been transmitted from the support state detection unit 30, it proceeds to step S9:NO and repeats the determination process in step S9.

[0054] Next, in step S10, the control device 10 sends a signal to a mechanism (not shown) that operates the shutter 16 to operate the shutter 16. The mechanism (not shown) then moves the shutter 16 to the open position, that is, to a position where the target 21 is exposed to the deposition chamber R1. In other words, it is moved to a position where the target 21 is exposed to the substrate 3 or the exhaust device 9. Whether or not the shutter 16 has moved to the open position can be determined based on the sensor value obtained by providing a sensor (not shown) on the shutter 16, or it can be determined by sending a signal and waiting for a predetermined time to elapse.

[0055] Next, in step S11, after the shutter 16 moves to the open position, the control device 10 supplies oxygen (O2) as a reactive gas to the depressurized film deposition chamber R1. Then, argon (Ar) is supplied as a process gas, and a compound film containing a metal oxide is formed on the surface of the substrate 3 by reactive sputtering. The flow is terminated when a film of a predetermined thickness is formed on the surface of the substrate.

[0056] In step S4, the movement of the shutter 16 to the closed position is performed based on the signal regarding the open / closed state of the door 17 from the open / closed state detection unit 18, but is not limited to this. For example, it may be performed based on the signal regarding the pressure value obtained from the pressure detection unit 19. That is, when the pressure value falls below the set value P2, the shutter 16 may be moved to the closed position via the determination unit 101 of the control device 10.

[0057] Furthermore, the movement of the shutter 16 to the open position in step S10 is performed based on a signal regarding the support state of the holder 5 from the support state detection unit 30, but is not limited to this. For example, it may be performed based on a signal regarding the pressure value obtained from the pressure detection unit 19. That is, when the pressure value falls below the set value P3, the shutter 16 may be moved to the open position via the determination unit 101 of the control device 10.

[0058] Furthermore, the movement of the shutter 16 to the open or closed position is not limited to conditional control via signals from the open / closed state detection unit 18, the pressure detection unit 19, or the support state detection unit 30. For example, it may be performed by sequential control, such as being performed before the operation of the exhaust device 9 or the support mechanism 4.

[0059] As described above, according to this embodiment, the target 21 is covered by the shutter 16 under reduced pressure in the deposition chamber R1. This reduces the adsorption of water particles onto the surface 211 of the target 21. Therefore, it is possible to stably generate plasma immediately after the depressurization of the deposition chamber R1 is completed. In this embodiment, the power supply 7 is a DC power supply, but it may also be an AC power supply. In this case, the AC power supply is connected to the anode 23 and the target 21, and AC power is supplied to the anode 23 and the target 21. In this case, the resistor 13 can be omitted.

[0060] Furthermore, in this embodiment, the shutter 16 is provided on the unit side where the target 21 is installed, with reference to the support mechanism 4 that supports the substrate 3, but this is not limited to this. Considering the degree of influence of water particles, the shutter 16 may also be provided on the support mechanism 4 side where the substrate 3 is supported, with reference to the target 21. Under reduced pressure in the film deposition chamber R1 within the chamber 1, the shutter 16 may be located in a part between the target 21 and the substrate 3.

[0061] (Second embodiment) Next, a second embodiment of the present invention will be described in detail. In the following description, the same reference numerals will be used for components that are the same as or equivalent to those in the above-described embodiment, and their descriptions will be omitted or simplified. The description will focus on the differences from the above-described embodiment. Figure 5 is a diagram illustrating the sputtering apparatus 100 according to this embodiment. In the sputtering apparatus 100 of this embodiment, the same reference numerals will be used for components that are the same as those in the sputtering apparatus 100 of this embodiment, and detailed descriptions will be omitted.

[0062] As shown in Figure 5, the sputtering apparatus 100 in this embodiment is a magnetron sputtering apparatus. The sputtering apparatus 100 forms a compound film, such as an insulating thin film, on the surface of the substrate 3, which is the object to be coated, by reactive sputtering. By forming a thin film on the surface of the substrate 3 with the sputtering apparatus 100, an article such as a final product or an intermediate product is manufactured. The substrate 3 is, for example, a lens substrate, and the film that is formed is, for example, an anti-reflective film, which is a laminated film consisting of multiple types of metal oxide layers. A lens is manufactured as an article using the sputtering apparatus 100. In this way, by using the sputtering apparatus 100 as a manufacturing apparatus and the above-described process as a manufacturing method, it is possible to manufacture articles.

[0063] The sputtering apparatus 100 comprises a chamber 1, a module 14 including a plurality of units 21 to 23, a shutter 16, a holder 5 for holding the substrate 3, a support mechanism 4, and a rotational lifting mechanism 6. A space that becomes the film deposition chamber R1 is defined inside the chamber 1. The module 14, the holder 5, and the support mechanism 4 are arranged inside the chamber 1, i.e., in the film deposition chamber R1. Each of the units 21 to 23 has the same configuration as unit 2 described in the first embodiment, and the configuration of each of the units 21 to 23 is not shown in Figure 4.

[0064] Units 21 to 23 can each be fitted with targets 211 to 213. Each of the targets 211 to 213 is a metal target. The type of metal used for each of the targets 211 to 213 should be selected according to the type of metal oxide layer to be formed. Therefore, targets 211 to 213 may all be the same metal, or they may all be different metals. Furthermore, the sputtering apparatus 100 includes a gas supply line 8, an exhaust device 9, and a control device 10 that controls the operation of each mechanism of the sputtering apparatus 100. The control device 10 is configured as a computer, as in the first embodiment. Also, as in the first embodiment, each mechanism is equipped with a control device configured as a computer including a microprocessor, etc. Then, the main control device outputs commands to each control device, and the actual control may be executed by sub-control devices installed in each device.

[0065] Module 14 is a polygonal prism-shaped module supported in Chamber 1 so as to be rotatable around a rotation axis O extending in the Y direction. Part of each side of the polygonal prism in Module 14 is the surface of a target installed in each unit. Multiple units 21 to 23 are arranged in the circumferential direction D1 around the rotation axis O and are rotatable together in the circumferential direction D1 around the rotation axis O.

[0066] Module 14 is driven to rotate around the rotation axis O by a drive mechanism (not shown). By rotating Module 14, one of the multiple units 21 to 23 can be positioned facing the substrate 3. Furthermore, by adjusting the rotational position of Module 14 relative to the substrate 3 by the drive mechanism (not shown), the incident angle of the sputtered particles on the substrate 3 can be adjusted, thereby adjusting the film thickness distribution of the film formed on the substrate 3.

[0067] Furthermore, module 14 is driven to translate in the translational direction D2 by a drive mechanism (not shown). By adjusting the translational position of module 14 relative to the substrate 3 by the drive mechanism (not shown), the incident angle of the sputtered particles on the substrate 3 can be adjusted, and the film thickness distribution of the film formed on the substrate 3 can be adjusted.

[0068] In Figure 5, the module 14 is shown as a rectangular prism, and the three units 21-23 are arranged on three faces of the module 14. However, the design is not limited to this configuration. Units can be arranged on any of the four faces, and are not limited to being arranged on three faces. Furthermore, the module 14 can be a polygon, for example, a triangular prism.

[0069] The shutter 16 is supported by the chamber 1 so as to be rotatable in the circumferential direction D1 about the rotation axis O, and has a cylindrical shape in which a portion of the cylinder surrounding the range in which the module 14 can rotate about the rotation axis O is cut out in the direction of the rotation axis O.

[0070] Furthermore, although not shown in Figure 5, the sputtering apparatus 100, like the first embodiment, is equipped with a plasma emission monitor 11, wires 12, and resistors 13, as shown in Figure 1, for each of the units 21 to 23. In addition, although not shown in Figure 5, the sputtering apparatus 100 is equipped with a power supply 7, as shown in Figure 1. The power supply 7 is configured to be selectively connected to one of the multiple units 21 to 23 by a switch (not shown). This allows the power supply 7 to supply power to generate plasma to the target corresponding to the selected unit among the multiple units 21 to 23.

[0071] Voltage information during plasma generation is acquired from the power supply 7 by the control device 10. Furthermore, plasma emission monitors 11, provided for each unit 21 to 23, are connected to the control device 10. The emission intensity of predetermined wavelengths contained in the plasma, detected by the plasma emission monitor of the unit during plasma generation, is acquired by the control device 10. The control device 10 uses the voltage or emission intensity value as a control value and can generate a control signal at each acquisition interval to stabilize the control value. This control signal is transmitted to the mass flow controller 82 of the reactive gas in the gas supply line 8, and the flow rate of the reactive gas is adjusted by the mass flow controller 82.

[0072] Furthermore, as shown in Figure 5, the control device 10 acquires information on the open / closed state of the door 17 from the open / closed state detection unit 18, and the control device 10 acquires pressure information from the pressure detection unit 19. In addition, the control device 10 acquires information on the support state of the holder 5 from the support state detection unit 30. The control device 10 acquires information on the open / closed state of the door 17, the pressure information, and the support state information of the holder 5, and the determination unit 101 determines whether or not the determination criteria are met. If the determination criteria are met, the control device 10 transmits an operation signal to the drive mechanism (not shown) of the shutter 16 and the transport mechanism (not shown) of the holder 5. The drive mechanism (not shown) of the shutter 16, which receives the operation signal, controls the position of the shutter 16.

[0073] Figure 6 is an explanatory diagram of the shutter 16 according to this embodiment. As shown in Figure 6, the inner diameter Rs of the shutter 16 is larger than the rotation diameter Rm of the module 14. The length of the chord S of the shutter 16 is larger than the length T of the target 21. The shutter 16 can cover the targets 21 of units 21 to 23 with its cylindrical side surface. When viewed from the direction of the rotation axis O, the shutter 16 is preferably circular, but it may also be a polygonal shape close to a circle. In Figure 6, it is shown as an arc.

[0074] The shutter 16 is driven to rotate around the rotation axis O by a drive mechanism (not shown). By rotating the shutter 16, the units 21 to 23 in module 14, excluding the plasma generating unit, can be covered from the deposition chamber R1 or the exhaust device 9.

[0075] Furthermore, by adjusting the rotational position of the shutter 16 relative to the target of the plasma-generating unit using a drive mechanism (not shown), the incident angle of the sputtered particles on the substrate 3 can be adjusted. Therefore, the shutter 16 may be used to adjust the film thickness distribution of the film formed on the substrate 3.

[0076] Furthermore, the shutter 16 can be driven in the translational direction D2 in conjunction with the module 14 by a drive mechanism (not shown). However, the shutter 16 is not limited to translational drive in conjunction with the module 14; it may also be driven independently of the module 14.

[0077] Next, a film formation method, i.e., a method for manufacturing an article, using the sputtering apparatus 100 in this embodiment to form a laminated film on the surface of a substrate 3 will be described. Figure 7 is a control flowchart in this embodiment. The control flowchart shown in Figure 7 is executed in coordination with the CPUs of each control device via communication and / or in coordination with the work of an operator.

[0078] As shown in Figure 7, when forming a laminated film on the substrate 3, the user first opens the door 17 of the chamber 1 in step S1 and places the targets 211 to 213 on the units 21 to 23 of the module 14. In this embodiment, the user performs the installation, but the installation work may be performed by a robot or other mechanical device.

[0079] Next, in step S2, when the door 17 of the chamber 1 of the sputtering apparatus 100 is closed, the open / closed state detection unit 18 sends a signal regarding the open / closed state of the door 17 to the control device 10. In step S2, a signal corresponding to the closed state is sent to the control device 10.

[0080] Next, in step S3, the control device 10, having acquired a closed state signal, determines in the determination unit 101 whether or not the determination criteria are met. In step S3, the determination criterion is whether or not a closed state signal has been transmitted from the open / closed state detection unit 18. If the control device 10 determines in the determination unit 101 that a closed state signal has been transmitted from the open / closed state detection unit 18, it proceeds from step S3:YES to step S4. If a closed state signal has not been transmitted from the open / closed state detection unit 18, it proceeds from step S3:NO and repeats the determination process in step S3.

[0081] Next, in step S4, the control device 10 sends a signal to a mechanism (not shown) that operates the shutter 16 to operate the shutter 16. The mechanism (not shown) then rotates the shutter 16 to the closed position, that is, to a position where it covers targets 211 to 213. In other words, it moves the shutter 16 to a position where it covers targets 211 to 213 relative to the support mechanism 4 that supports the exhaust device 9 or the substrate 3. As shown in Figure 6, the targets 211 to 213 are covered by the shutter 16 by moving the notched portion of the shutter 16 to the side of the module 14 where no targets are provided. Depending on the placement of the targets, there may be targets that are less likely to attract water particles. In that case, it is not necessary to cover those targets with the shutter 16. That is, it is sufficient to cover some of the targets that are likely to attract water particles with the shutter 16. Whether or not the shutter 16 has moved to the closed position can be determined by a sensor (not shown) installed on the shutter 16 and based on the sensor value, or by sending a signal and making a fixed determination after a predetermined time has elapsed.

[0082] Next, in step S5, after the shutter 16 moves to the closed position, the exhaust device 9 reduces the pressure in the deposition chamber R1. The pressure value inside the deposition chamber R1 is detected by the pressure detection unit 19 and transmitted to the control device 10.

[0083] Next, in step S6, the control device 10 determines in the determination unit 101 whether the pressure value obtained by the pressure detection unit 19 is less than or equal to the set value P1. In step S6, the determination criterion is whether or not the pressure value transmitted from the pressure detection unit 19 is less than or equal to the set value P1. If the pressure value obtained by the pressure detection unit 19 is less than or equal to the set value P1, the control device 10 proceeds from step S6:YES to step S7. If the pressure value obtained by the pressure detection unit 19 is not less than or equal to the set value P1, the control device 10 returns to step S5 from step S6:NO and repeats the depressurization of the film deposition chamber R1 by the exhaust device 9.

[0084] Next, in step S7, a signal is sent to an unshown transport mechanism for transporting the base material 3 together with the holder 5, and the unshown transport mechanism transports the base material 3 together with the holder 5.

[0085] Next, in step S8, the user transports the base material 3 together with the holder 5 from the load lock into the chamber 1 via a transport port (not shown), and causes the support mechanism 4 to support the holder 5. In this embodiment, the user causes the support mechanism 4 to support the holder 5, but this is not limited to this, and the support work may be performed by, for example, a robot or mechanical device. The support state of the holder 5 is detected by the support state detection unit 30 and transmitted to the control device 10.

[0086] Next, in step S9, the control device 10 determines whether or not it has received a signal from the support state detection unit 30 indicating that the support of the holder 5 to the support mechanism 4 is complete. In step S9, the determination criterion is whether or not a signal indicating that support is complete has been transmitted from the support state detection unit 30. The control device 10, in its determination unit 101, determines that if a signal indicating that support is complete has been transmitted from the support state detection unit 30, it proceeds to step S10 from step S9:YES. If a signal indicating that support is complete has not been transmitted from the support state detection unit 30, it proceeds to step S9:NO and repeats the determination process in step S9.

[0087] Next, in step S10, the control device 10 transmits a signal to a mechanism (not shown) that operates the shutter 16 to operate the shutter 16. The mechanism (not shown) then moves the shutter 16 to the open position relative to the target 211. That is, the surface formed by extending the chord S of the shutter 16 in the direction of the rotation axis O becomes parallel to the surface 2111 of the target 211, and the shutter rotates to a position where the target 21 is exposed to the deposition chamber R1. In other words, it moves to a position where the target 211 is exposed to the substrate 3 or the exhaust device 9. Whether or not the shutter 16 has moved to the open position may be determined based on the sensor value obtained by providing a sensor (not shown) on the shutter 16, or it may be determined by sending a signal and waiting for a predetermined time to elapse.

[0088] Next, a method for forming the first layer on the substrate 3 by sputtering the target 211 will be described.

[0089] From step S11, after the shutter 16 moves to the open position, the control device 10 moves the target 211 and the base material 3 using the drive mechanism (not shown) and the rotational lifting mechanism 6 of module 14, and adjusts the target 211 and the base material 3 to a predetermined position.

[0090] Next, from step S12, the control device 10 controls the plasma emission intensity or emission intensity ratio and the voltage during plasma generation using the gas supply line 8 and the plasma emission monitor 11 to form a metal oxide film containing the target metal 211 on the substrate 3. When the first layer of film formed on the substrate 3 reaches a predetermined thickness, the film formation is terminated.

[0091] Next, in step S13, the target 212 is sputtered to form the second layer on the first layer. The target 212 is made of a different metal material than the target 211. In this case as well, the shutter 16 is rotated so that the surface formed by extending the chord S of the shutter 16 in the direction of the rotation axis O is parallel to the surface 2112 of the target 212, and the film is deposited using the same procedure as for the first layer. For the second layer and subsequent layers, the third layer is deposited in step S14 using the same procedure as described above. By this film deposition method, a laminated film can be formed on the substrate 3.

[0092] As described above, according to this embodiment, targets 211-213 are covered by the shutter 16 under reduced pressure in the deposition chamber R1. This reduces the adsorption of water particles onto the surfaces of targets 211-213. Therefore, it is possible to generate plasma stably immediately after the depressurization of the deposition chamber R1 is completed. Furthermore, since each unit 21-23 has the same configuration as unit 2 of the first embodiment, fluctuations in the plasma distribution in each unit 21-23 are suppressed even if the rotational or translational position of module 14 is adjusted according to the shape of the substrate 3. In addition, since thin films are prevented from forming on the anode 23 in each unit 21-23, plasma can be generated stably over a long period of time.

[0093] Furthermore, in this embodiment, the shutter 16 is provided on the unit side where the targets 211-213 are installed, with reference to the support mechanism 4 that supports the substrate 3, but this is not limited to this. Considering the degree of influence of water particles, the shutter 16 may also be provided on the support mechanism 4 side where the substrate 3 is supported, with reference to the targets 211-213. Under reduced pressure in the deposition chamber R1 within the chamber 1, the shutter 16 may be located in a part between the targets 211-213 and the substrate 3.

[0094] (Examples and Comparative Examples) The stability of the plasma was experimentally verified in two cases: when plasma was generated immediately after the depressurization of the deposition chamber R1 was completed using the sputtering apparatus of the embodiment corresponding to this embodiment, and when plasma was generated immediately after the depressurization of the deposition chamber R1 was completed using the sputtering apparatus of the comparative example.

[0095] The sputtering apparatus unit (cathode section) in the embodiment corresponds to the sputtering apparatus 100 shown in Figure 5. Furthermore, the control device 10, upon acquiring the closed state of the door 17, moves the shutter 16 to the closed position via a drive mechanism (not shown) to reduce the pressure in the deposition chamber R1. On the other hand, the sputtering apparatus in the comparative example is configured so that the shutter 16 remains in the open position until the pressure reduction in the deposition chamber R1 is complete. The unit configuration in the comparative example is the same as in the embodiment.

[0096] The sputtering conditions for the sputtering apparatus in the example and the sputtering apparatus in the comparative example will be described. The exhaust speed of the exhaust system 9 for Ar gas is 18.2 m / s. 3 The time was set to / s. The materials for target 21 (example) and 21X (comparative example) were hafnium (Hf). Ar gas was used as the process gas and O2 gas as the reactive gas.

[0097] In this embodiment, with the shutter 16 moved to the closed position, the maximum pressure inside the chamber 1 is 5 × 10 -4 When the pressure fell below Pa, the shutter 16 was moved to the open position to allow Ar gas and O2 gas to flow into the chamber 1. In the comparative example, the shutter 16 was kept in the open position until the depressurization of the deposition chamber R1 was completed, so the final pressure inside chamber 1 was 5 × 10⁻⁶. -4 If the pressure fell below Pa, Ar gas and O2 gas were introduced into Chamber 1. The flow rate of Ar gas was adjusted so that the pressure inside Chamber 1 was approximately 0.2 Pa when O2 gas was not flowing into Chamber 1.

[0098] A DC pulse power supply was used for the power supply 7 that supplied power to each target 21 (Example) and 21X (Comparative Example). The power density on the surface of each target 21 (Example) and 21X (Comparative Example) was approximately 0.12 W / mm². 2 The power was adjusted accordingly. The plasma emission monitor 11 was used to acquire the emission intensity at wavelengths related to Hf and Ar. The control device 10 adjusted the flow rate of O2 gas at each acquisition interval so that the ratio of the two intensities would reach the set target value.

[0099] Figure 8 is a graph showing the experimental results for the example and the comparative example. In Figure 8, the vertical axis shows the number of abnormal discharges, which is the value obtained by dividing the number of microarcs per batch by the plasma generation time. The number of microarcs is detected by power supply 7. As shown in Figure 8, the sputtering apparatus of the comparative example had a number of abnormal discharges of 52 times / second, while the example suppressed the number of abnormal discharges to 0.4 times / second. Thus, in the example, it was confirmed that plasma was stably generated immediately after the depressurization of the deposition chamber R1 was completed.

[0100] (Other embodiments) The processing procedures of the embodiments described above are specifically executed by at least one CPU of each control device. Therefore, it is also possible to configure the device to read and execute a recording medium on which a control program of software capable of executing the above-described functions is recorded. In this case, the control program read from the recording medium itself will realize the functions of each embodiment described above, and the control program itself and the recording medium on which the control program is recorded will constitute the present invention.

[0101] Furthermore, in each embodiment, the computer-readable recording medium was described as a ROM, RAM, or flash ROM, and the program was stored in the ROM, RAM, or flash ROM. However, the present invention is not limited to these embodiments. The program for carrying out the present invention may be recorded on any recording medium that is computer-readable, and may be recorded on an SSD (Solid State Drive), etc.

[0102] Furthermore, although the above-described embodiment described the case where the reactive gas is oxygen (O2) gas, it is not limited to this. The reactive gas can be selected according to the thin film to be formed, and may be nitrogen (N2) gas, for example. Also, although the above-described embodiment described the film formation by sputtering as an example, it is not limited to this. For example, it may be applied to film formation methods in which the film formation material is placed separately from the substrate, such as vapor deposition or ion plating.

[0103] Furthermore, the various embodiments described above can be applied to machines that can automatically perform movements such as extension and retraction, bending and straightening, vertical movement, horizontal movement, or rotation, or combinations thereof, based on information stored in a memory device provided in the control device.

[0104] Furthermore, the present invention is not limited to the embodiments described above, and many modifications are possible within the technical concept of the present invention. In addition, the effects described in the embodiments of the present invention are merely a list of the most preferred effects that result from the present invention, and the effects of the present invention are not limited to those described in the embodiments. Moreover, the various embodiments and modifications described above may be combined and implemented.

[0105] Furthermore, the disclosure of this embodiment includes the following configurations and methods.

[0106] (Item 1) The chamber in which the target is placed, It comprises a shielding portion capable of covering a part of the target, While the chamber is under reduced pressure, the shielding portion covers a part of the target. A film deposition apparatus characterized by the following features.

[0107] (Item 2) The shielding portion is movable between a position that covers a part of the target and a position that exposes a part of the target. The film deposition apparatus described in item 1, characterized by the features described herein.

[0108] (Item 3) The chamber includes a first detection unit that detects the open / closed state of the chamber door and transmits a signal related to the open / closed state. Based on the signal relating to the open / closed state, the shielding portion is moved to a position that covers a part of the target. A film deposition apparatus according to item 1 or 2, characterized by the features described above.

[0109] (Item 4) A support mechanism for the holder that holds the substrate, The system includes a second detection unit that detects the support state of the holder and transmits a signal related to the support state, Based on the signal relating to the support state, the shielding portion is moved to a position that exposes a part of the target. A film deposition apparatus according to any one of items 1 to 3, characterized by the features described above.

[0110] (Item 5) The chamber includes a pressure detection unit that detects the pressure value inside the chamber and transmits a signal related to the pressure value. When the pressure value reaches a predetermined value, the shielding portion is moved to a position that covers a part of the target, or to a position that exposes a part of the target. A film deposition apparatus according to any one of items 1 to 3, characterized by the features described above.

[0111] (Item 6) It is equipped with a support mechanism for the holder that holds the substrate, The shielding portion covers the target with respect to the support mechanism. A film deposition apparatus according to any one of items 1 to 5, characterized by the features described above.

[0112] (Item 7) The chamber is equipped with an exhaust device that reduces the pressure inside the chamber, The shielding portion covers the target with respect to the exhaust device. A film deposition apparatus according to any one of items 1 to 6, characterized by the features described above.

[0113] (Item 8) The shielding portion has a shape in which a part is cut out in the direction in which the target moves by rotation. By moving the aforementioned shape, a part of the target is covered, or a part of the target is exposed. A film deposition apparatus according to any one of items 1 to 7, characterized by the features described above.

[0114] (Item 9) The aforementioned shielding portion is an arc, The length of the chord of the arc is longer than the length of the target. A film deposition apparatus as described in item 8, characterized by the features described above.

[0115] (Item 10) By adjusting the position of the shielding portion, the incident angle of the particles formed from the target onto the substrate is adjusted. A film deposition apparatus according to any one of items 1 to 9, characterized by the features described herein.

[0116] (Item 11) The shielding portion is located on the side of the target. A film deposition apparatus according to any one of items 1 to 10, characterized by the features described above.

[0117] (Item 12) The shielding portion is at ground potential or floating potential. A film deposition apparatus according to any one of items 1 to 11, characterized by the features described herein.

[0118] (Item 13) A gas supply line that supplies gas containing reactive gases, It comprises a plasma emission monitor that detects the emission intensity of a predetermined wavelength contained in the generated plasma, The flow rate of the gas is adjusted based on the detected emission intensity at the predetermined wavelength. A film deposition apparatus according to any one of items 1 to 12, characterized by the features described herein.

[0119] (Item 14) It further includes a resistor that electrically connects the anode and ground. A film deposition apparatus according to any one of items 1 to 13, characterized by the features described herein.

[0120] (Item 15) The electrical resistance of the resistor is between 40 kΩ and 220 kΩ. A film deposition apparatus as described in item 14, characterized by the features described herein.

[0121] (Item 16) A film deposition apparatus described in any one of items 1 to 15 is characterized by performing film deposition using at least one of the following methods: sputtering, evaporation, or ion plating.

[0122] (Item 17) In the film deposition apparatus described in any one of items 1 to 16, Before reducing the pressure inside the chamber, the shielding portion covers a part of the target. A film deposition apparatus characterized by the following features.

[0123] (Item 18) A chamber in which the substrate is placed, It comprises a shielding portion capable of covering a part of the substrate, While the inside of the chamber is under reduced pressure, the shielding portion covers a part of the substrate. A film deposition apparatus characterized by the following features.

[0124] (Item 19) A chamber in which the target and substrate are placed, It comprises a shielding portion that can be positioned between the target and the substrate, While the chamber is under reduced pressure, the shielding portion is positioned in a part between the target and the substrate. A film deposition apparatus characterized by the following features.

[0125] (Item 20) A compound film is formed on a substrate using a film deposition apparatus described in any one of items 1 to 19. A film formation method characterized by the following:

[0126] (Item 21) A compound film is formed on a substrate using a film-forming apparatus described in any one of items 1 to 19 to manufacture an article. A method for manufacturing an article characterized by the following:

[0127] (Item 22) A method for manufacturing an article by forming a compound film on a substrate using a film-forming apparatus described in any one of items 1 to 19, Install multiple metal targets, Oxygen is supplied to the chamber as a reactive gas. Forms a compound film containing a metal oxide. A method for manufacturing an article characterized by the following:

[0128] (Item 23) The compound film is a multilayer film containing multiple types of metal oxide layers. A film-forming method according to item 20, or a method for manufacturing an article according to item 21 or 22, characterized by the above.

[0129] (Item 24) The chamber in which the target is placed, A method for controlling a film deposition apparatus comprising a shielding portion capable of covering a part of the target, While the chamber is under reduced pressure, the shielding portion covers a part of the target. A control method characterized by the following:

[0130] (Item 25) A chamber in which the substrate is placed, A method for controlling a film-forming apparatus comprising a shielding portion capable of covering a part of the substrate, While the inside of the chamber is under reduced pressure, the shielding portion covers a part of the substrate. A control method characterized by the following:

[0131] (Item 26) A chamber in which the target and substrate are placed, It comprises a shielding portion that can be positioned between the target and the substrate, While the chamber is under reduced pressure, the shielding portion is positioned in a part between the target and the substrate. A control method characterized by the following:

[0132] (Item 27) A control program capable of executing any one of the control methods described in items 24 to 26.

[0133] (Item 28) A computer-readable recording medium containing the control program described in item 27. [Explanation of symbols]

[0134] 1 Chamber Units 2, 21, 22, and 23 3 Base material 4 Support mechanism 5 holders 6. Rotary lifting mechanism 8. Gas supply line 9. Exhaust system 10 Control device 11 Plasma Emission Monitor 12 Electric wire 13 Resistor 16 shutters 17 Doors 18 Open / Close State Detection Unit 19 Pressure detection unit 20 Unit Body 21, 211, 212, 213, 21X target 22 Magnets 23 Anodes 24 Metal components 30 Support state detection unit 81, 82 Mass flow controller 83 Gas supply pipe 101 Judgment section 111 Detection Unit 112 Optical Fibers 113 Spectrometer 201 Main surface 202 recess 211 Surface 212, 242 aperture 241 Shield section

Claims

1. The chamber in which the target is placed, It comprises a shielding portion capable of covering a part of the target, While the chamber is under reduced pressure, the shielding portion covers a part of the target. A film deposition apparatus characterized by the following features.

2. The shielding portion is movable between a position that covers a part of the target and a position that exposes a part of the target. The film deposition apparatus according to feature 1.

3. The chamber includes a first detection unit that detects the open / closed state of the chamber door and transmits a signal related to the open / closed state. Based on the signal relating to the open / closed state, the shielding portion is moved to a position that covers a part of the target. The film deposition apparatus according to feature 1.

4. A support mechanism for the holder that holds the substrate, The device includes a second detection unit that detects the support state of the holder and transmits a signal related to the support state, Based on the signal relating to the support state, the shielding portion is moved to a position that exposes a part of the target. The film deposition apparatus according to feature 1.

5. The chamber includes a pressure detection unit that detects the pressure value inside the chamber and transmits a signal related to the pressure value. When the pressure value reaches a predetermined value, the shielding portion is moved to a position that covers a part of the target, or to a position that exposes a part of the target. The film deposition apparatus according to feature 1.

6. It is equipped with a support mechanism for the holder that holds the substrate, The shielding portion covers the target with respect to the support mechanism. The film deposition apparatus according to feature 1.

7. The chamber is equipped with an exhaust device that reduces the pressure inside the chamber, The shielding portion covers the target with respect to the exhaust device. The film deposition apparatus according to feature 1.

8. The shielding portion has a shape in which a part is cut out in the direction in which the target moves by rotation. By moving the aforementioned shape, a part of the target is covered, or a part of the target is exposed. The film deposition apparatus according to feature 1.

9. The shielding portion is an arc, The length of the chord of the arc is longer than the length of the target. The film deposition apparatus according to feature 8.

10. By adjusting the position of the shielding portion, the incident angle of the particles formed from the target onto the substrate is adjusted. The film deposition apparatus according to feature 1.

11. The shielding portion is located on the side of the target. The film deposition apparatus according to feature 1.

12. The shielding portion is at ground potential or floating potential. The film deposition apparatus according to feature 1.

13. A gas supply line that supplies gas containing reactive gases, It comprises a plasma emission monitor that detects the emission intensity of a predetermined wavelength contained in the generated plasma, The flow rate of the gas is adjusted based on the detected emission intensity at the predetermined wavelength. The film deposition apparatus according to feature 1.

14. It further includes a resistor that electrically connects the anode and ground. The film deposition apparatus according to feature 1.

15. The electrical resistance of the resistor is between 40 kΩ and 220 kΩ. The film deposition apparatus according to feature 14.

16. The film deposition apparatus according to claim 1 is characterized in that it performs film deposition using at least one of the following methods: sputtering, vapor deposition, and ion plating.

17. In the film deposition apparatus according to claim 1, Before reducing the pressure inside the chamber, the shielding portion covers a part of the target. A film deposition apparatus characterized by the following features.

18. A chamber in which the substrate is placed, It comprises a shielding portion capable of covering a part of the substrate, While the inside of the chamber is under reduced pressure, the shielding portion covers a part of the substrate. A film deposition apparatus characterized by the following features.

19. A chamber in which the target and substrate are placed, It comprises a shielding portion that can be positioned between the target and the substrate, While the chamber is under reduced pressure, the shielding portion is positioned in a part between the target and the substrate. A film deposition apparatus characterized by the following features.

20. A compound film is formed on a substrate using the film-forming apparatus described in claim 1. A film formation method characterized by the following:

21. A compound film is formed on a substrate using the film-forming apparatus described in claim 1 to manufacture an article. A method for manufacturing an article, characterized by the following:

22. A method for manufacturing an article by forming a compound film on a substrate using the film-forming apparatus described in claim 1, Install multiple metal targets, Oxygen is supplied to the chamber as a reactive gas. Forms a compound film containing a metal oxide. A method for manufacturing an article, characterized by the following:

23. The compound film is a multilayer film containing multiple types of metal oxide layers. A film-forming method according to claim 20, or a method for manufacturing an article according to claim 21 or 22.

24. The chamber in which the target is placed, A method for controlling a film deposition apparatus comprising a shielding portion capable of covering a part of the target, While the chamber is under reduced pressure, the shielding portion covers a part of the target. A control method characterized by the following:

25. A chamber in which the substrate is placed, A method for controlling a film-forming apparatus comprising a shielding portion capable of covering a part of the substrate, While the inside of the chamber is under reduced pressure, the shielding portion covers a part of the substrate. A control method characterized by the following:

26. A chamber in which the target and substrate are placed, It comprises a shielding portion that can be positioned between the target and the substrate, While the chamber is under reduced pressure, the shielding portion is positioned in a part between the target and the substrate. A control method characterized by the following:

27. A control program capable of executing the control method described in any one of claims 24 to 26.

28. A computer-readable recording medium storing the control program described in claim 27.

Images