Sputtering device

Abstract

The cathode electrode layer of the OLED is manufactured by sputtering. [Solution] An apparatus 1 for sputtering the surface of an underlying organic film formed on a substrate Sub comprises a film formation chamber 11, a sputtering cathode section 100 for emitting silver sputtered particles, a relative movement section 13 for relatively moving the sputtering cathode section and the substrate in a relative movement direction along the surface, and an atmosphere control section 12 for creating a sputtering atmosphere. The sputtering cathode section comprises a magnetic circuit 120 provided on the surface of a flat yoke 110, a backing plate 130 whose relative movement direction is the width direction, and a flat plate target 140 made of silver. The magnetic circuit is capable of forming a magnetic field profile having a sputtered particle dispersion region that can disperse the emission of sputtered particles along the target surface 141.

Description

Technical Field

[0001] The present invention relates to a sputtering apparatus, and particularly to a technique suitable for use in forming a silver electrode of an OLED.

Background Art

[0002] FPD (flat panel display) includes an OLED (Organic Light Emitting Diode) display device. In the OLED display device, an anode electrode layer, an organic film, and a cathode electrode layer are laminated on a substrate. As an OLED display device, a top emission structure is known. As the top emission structure, a macro cavity using a half mirror is applied. Silver is used for the cathode electrode layer that becomes a half mirror. The cathode electrode layer is known to be formed by vapor deposition.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the formation of the cathode electrode layer by vapor deposition, with the increase in the size of the OLED display device, there has been a demand to improve the problems of ensuring the uniformity of the cathode electrode layer and low material use efficiency of silver. In response to this, the inventors of the present application considered forming the cathode electrode layer by sputtering. In the formation of the cathode electrode layer by sputtering, it is easy to increase the size of the OLED display device. However, at present, damage to the underlying organic film has been a problem and has not been realized.

[0005] This invention has been made in view of the above circumstances and aims to achieve the following objectives. 1. To enable the formation of the cathode electrode layer of an OLED display device by sputtering. 2. To improve the uniformity of the cathode electrode layer in OLED display devices. 3. To improve the efficiency of silver utilization in the formation of the cathode electrode layer of OLED display devices. 4. To enable reduction of damage to the underlying organic film during cathode electrode layer formation in OLED display devices. [Means for solving the problem]

[0006] (1) A sputtering apparatus according to one aspect of the present invention is An apparatus for forming a silver layer on the surface of an underlying organic film formed on a substrate by sputtering via a mask, A film deposition chamber and A sputtering cathode section that emits silver sputtered particles toward the substrate within the film deposition chamber, A relative movement unit that moves the sputtering cathode unit and the substrate relative to each other in a relative movement direction along the surface, An atmosphere control unit that creates a sputtering atmosphere inside the film deposition chamber, Equipped with, The sputtering cathode section is A flat yoke and A magnetic circuit provided on the surface of the yoke, A backing plate is arranged on top of the magnetic circuit, and the relative direction of movement is in the width direction, A flat plate target made of silver is provided on the backing plate, A power supply unit that supplies sputtering power to the backing plate, Equipped with, The magnetic circuit is capable of forming a magnetic field profile having a sputter particle dispersion region that can disperse the emission of sputter particles along the target surface of the target. This resolved the above issues. (2) The sputtering apparatus of the present invention, in the above (1), The magnetic circuit forms the sputtered particle dispersion region by a magnetic field profile that forms a zero-vertical-magnetic-field region where the vertical magnetic field component B⊥ in the direction perpendicular to the plane parallel to the target is near 0. It is possible. (3) The sputtering apparatus of the present invention, in the above (2), The aforementioned magnetic circuit is The profile of the vertical magnetic field component B⊥ is symmetrical in the width direction, and the profile of the vertical magnetic field component B⊥ has vertical magnetic field peaks B⊥p near both ends of the target in the width direction. The profile of the vertical magnetic field component B⊥ makes the ratio of the length of the vertical magnetic field zero region in the width direction to the distance between the vertical magnetic field peaks B⊥p in the width direction to 2 / 5 or more. It is possible. (4) The sputtering apparatus of the present invention, in the above (3), In the region of zero vertical magnetic field, the intensity (absolute value) of the vertical magnetic field component B⊥ is such that the ratio B⊥ / B⊥p to the intensity of the vertical magnetic field peak B⊥p is in the range of 0 to 1 / 5. It is possible. (5) The sputtering apparatus of the present invention, in the above (1), Multiple sputtering cathode sections are arranged in a line in the relative movement direction, A sputtering pair is configured in which the sputtering cathodes are arranged side by side such that two adjacent target surfaces are aligned in the relative movement direction and located on the same plane. The sputtering pair is such that the two sputtering cathodes are both rotatable around axes parallel to each other in a direction intersecting the relative movement direction. The device includes a cathode rotation mechanism that allows the two target surfaces to rotate and tilt around their respective axes from a state where they are flush and located on the same plane, so that they face each other. It is possible. (6) In the above (1), the sputtering apparatus of the present invention The power supply unit is a DC power supply, It can be. (7) In the above (1), the sputtering apparatus of the present invention When the substrate is relatively moved, it has a substrate support portion that supports the substrate while cooling the substrate, It can be. (8) In the above (1), the sputtering apparatus of the present invention The magnetic circuit is A central magnet portion linearly extending in a direction intersecting the width direction in the central region of the yoke, A peripheral magnet portion disposed around the central magnet portion, A circulating magnet portion disposed between the central magnet portion and the peripheral magnet portion and surrounding the central magnet portion, It has, The central magnet portion, the peripheral magnet portion, and the circulating magnet portion have a parallel region in which they are arranged parallel to each other in the width direction, It can be. (9) In the above (8), the sputtering apparatus of the present invention A plurality of the circulating magnet portions are arranged between the central magnet portion and the peripheral magnet portion, It can be. (10) In the above (1), the sputtering apparatus of the present invention The target is formed of a silver alloy, It can be.

[0007] (1) A sputtering apparatus according to an aspect of the present invention It is an apparatus for forming a silver layer by sputtering through a mask on the surface of an underlying organic film formed on a substrate, A film formation chamber, A sputtering cathode portion that emits silver sputtering particles toward the substrate in the film formation chamber, A relative movement portion that relatively moves the sputtering cathode portion and the substrate in a relative movement direction along the surface, An atmosphere control unit that creates a sputtering atmosphere inside the film deposition chamber, Equipped with, The sputtering cathode section is A flat yoke and A magnetic circuit provided on the surface of the yoke, A backing plate is arranged on top of the magnetic circuit, and the relative direction of movement is in the width direction, A flat plate target made of silver is provided on the backing plate, A power supply unit that supplies sputtering power to the backing plate, Equipped with, The magnetic circuit is capable of forming a magnetic field profile having a sputter particle dispersion region that can disperse (mitigate concentration of) the emission of sputter particles along the target surface of the target. This resolved the above issues.

[0008] In the above configuration, the magnetic circuit forms a magnetic field profile having a sputtered particle dispersion region, thereby dispersing the emission of sputtered particles (plasma distribution) along the target surface, and thus mitigating the concentration of sputtered particles. This makes it possible to reduce damage to the film deposition region caused by sputtered particles. This suppresses damage to the underlying organic film and improves the yield in OLED manufacturing. The improved yield in OLED manufacturing makes it possible to manufacture OLEDs by sputtering, which was not possible before. Therefore, the amount of silver used in the manufacturing of OLED cathode electrodes can be reduced. Here, the dispersion or concentration relaxation of sputtered particles means that, during sputtering, the number of argon particles / ions / plasma entering the target surface does not form localized areas with a large number of particles / ions / plasma, but rather the number of argon particles / ions / plasma entering per unit area is averaged out and spread uniformly across the entire target surface, resulting in a distribution state close to that.

[0009] (2) The sputtering apparatus of the present invention, in the above (1), The magnetic circuit forms the sputtered particle dispersion region by a magnetic field profile that forms a zero-vertical-magnetic-field region (target surface current dispersion region) where the vertical magnetic field component B⊥ in the direction perpendicular to the plane parallel to the target (backing plate) is near 0. It is possible.

[0010] In the above configuration, the magnetic field profile formed by the magnetic circuit can create a sputtered particle dispersion region where the vertical magnetic field is zero. Moreover, the magnetic circuit can form this vertical magnetic field zero region not as a narrow area like a point or line, but as a region occupying, for example, about half the area of ​​the target surface. In other words, the vertical magnetic field zero region is a target surface current dispersion region that disperses the current on the target surface. The target surface current dispersion region can disperse the number of argon particles / ions / plasma entering the target during sputtering. As a result, the formation of a sputtered particle dispersion region disperses the emission of sputtered particles on the target surface during sputtering, thereby suppressing localized temperature rises in the underlying organic film during sputtering. At the same time, the formation of a sputtered particle dispersion region can reduce the incident energy of sputtered particles on the underlying organic film during sputtering. The formation of a sputtered particle dispersion region can suppress localized concentration of sputtered particles incident on the underlying organic film during sputtering. The formation of a sputtered particle dispersion region can suppress damage to the underlying organic film during sputtering.

[0011] (3) The sputtering apparatus of the present invention, in the above (2), The aforementioned magnetic circuit is The profile of the vertical magnetic field component B⊥ is symmetrical in the width direction, and the profile of the vertical magnetic field component B⊥ has vertical magnetic field peaks B⊥p near both ends of the target in the width direction. The profile of the vertical magnetic field component B⊥ makes the ratio of the length of the vertical magnetic field zero region in the width direction to the distance between the vertical magnetic field peaks B⊥p in the width direction to 2 / 5 or more. It is possible.

[0012] In the above configuration, the magnetic circuit is capable of forming a zero-vertical magnetic field region having the above range. The magnetic circuit is capable of forming a magnetic field profile having this zero-vertical magnetic field region. As a result, the sputtering cathode can disperse the emission of sputtered particles on the target surface during sputtering by the sputtered particle dispersion region having the above range, thereby suppressing a localized temperature rise in the underlying organic film during sputtering. At the same time, the sputtering cathode can reduce the incident energy of sputtered particles on the underlying organic film during sputtering by forming the sputtered particle dispersion region having the above range. The sputtering cathode can suppress localized concentration of sputtered particles incident on the underlying organic film during sputtering by forming the sputtered particle dispersion region having the above range. The sputtering cathode can suppress damage to the underlying organic film during sputtering by forming the sputtered particle dispersion region having the above range. Furthermore, the symmetrical nature of the profile of the vertical magnetic field component B⊥ in the width direction is not limited to perfect symmetry with respect to the axis of the magnetic circuit. It simply means symmetrical in relation to the shape of the magnetic circuit.

[0013] (4) The sputtering apparatus of the present invention, in the above (3), In the region of zero vertical magnetic field, the intensity (absolute value) of the vertical magnetic field component B⊥ is such that the ratio B⊥ / B⊥p to the intensity of the vertical magnetic field peak B⊥p is in the range of 0 to 1 / 5. It is possible.

[0014] In the above configuration, by setting the intensity of the vertical magnetic field component B⊥ in the zero-vertical-magnetic-field region to the above range, the current on the target surface can be dispersed. By setting the intensity of the vertical magnetic field component B⊥ in the zero-vertical-magnetic-field region to the above range, the penetration of argon particles / ions / plasma into the target surface during sputtering does not concentrate locally, but rather the number of argon particles / ions / plasma entering per unit area is averaged across the entire target surface, resulting in a distribution state close to that of a uniformly spread state. By setting the intensity of the vertical magnetic field component B⊥ in the zero vertical magnetic field region to the above range, the emission of sputtered particles on the target surface during sputtering can be dispersed. By setting the intensity of the vertical magnetic field component B⊥ in the zero vertical magnetic field region to the above range, the incident energy of sputtered particles on the underlying organic film during sputtering can be reduced. By setting the intensity of the vertical magnetic field component B⊥ in the zero vertical magnetic field region to the above range, local concentration of sputtered particles incident on the underlying organic film during sputtering can be suppressed. By setting the intensity of the vertical magnetic field component B⊥ in the zero vertical magnetic field region to the above range, damage to the underlying organic film during sputtering can be suppressed. Note that the intensity of the vertical magnetic field component B⊥ and the intensity of the vertical magnetic field peak B⊥p in the zero-vertical-magnetic-field region are absolute values.

[0015] (5) The sputtering apparatus of the present invention, in the above (1), Multiple sputtering cathode sections are arranged in a line in the relative movement direction, A sputtering pair section is configured in which the sputtering cathode sections are arranged side by side such that two adjacent target surfaces are aligned in the relative movement direction and located on the same plane (same plane). The sputtering pair is such that the two sputtering cathodes are both rotatable around axes parallel to each other in a direction intersecting the relative movement direction. The device includes a cathode rotation mechanism that allows the two target surfaces to rotate and tilt around their respective axes from a state where they are flush and located on the same plane, so that they face each other. It is possible.

[0016] In other words, the sputtering apparatus of the present invention includes a cathode rotation mechanism that allows the target surfaces of two sputtering cathode sections, which are paired by two sputtering cathode sections adjacent to each other in the relative movement direction, to rotate and tilt around an axis along a direction intersecting the relative movement direction, from a state where they are flush and located on the same plane, so that they face each other. It is possible.

[0017] In the above configuration, having sputtering pair sections inclined toward each other allows for the dispersion of sputtered particles emitted from the target surface during sputtering. Having sputtering pair sections inclined toward each other reduces the incident energy of sputtered particles on the underlying organic film during sputtering. Having sputtering pair sections inclined toward each other suppresses localized concentration of sputtered particles incident on the underlying organic film during sputtering. Having sputtering pair sections inclined toward each other suppresses damage to the underlying organic film during sputtering. It should be noted that the term "coplanar target surface" simply means that the target surface is parallel and equidistant from the relatively moving substrate surface, and is not necessarily limited to the pair of target surfaces being planar.

[0018] Furthermore, in the above configuration, sputtering can be performed with the paired target surfaces flush with each other without tilting them. Alternatively, in the above configuration, the tilt angle of the paired target surfaces can be set within the range of 0° to ±30° relative to the plane on which the paired target surfaces are flush. Furthermore, the tilt angles of the paired target surfaces can both be the same angle. Or, the tilt angles of the paired target surfaces can be different angles.

[0019] (6) The sputtering apparatus of the present invention, in the above (1), The aforementioned power supply unit is a DC power source. It is possible.

[0020] In the above configuration, the DC power supply prevents the excessive movement of ions, or movement within the plasma atmosphere, which can occur with periodic power supplies such as high-frequency ones. In other words, with power supplies that provide power through the plasma atmosphere, such as AC power supplies, voltage changes can alter the direction of the voltage or electric field, causing damage to the underlying organic film. Therefore, it is undesirable for currents and electric fields to change to the extent that they alter the direction of ions / plasma. In contrast, with the above configuration, the sputtering power during sputtering is a DC power supply, which is a direct current discharge, thus suppressing damage to the underlying organic film. Therefore, adverse effects on OLED devices can be reduced. Furthermore, it is effective in improving yield by reducing damage during OLED device manufacturing.

[0021] (7) The sputtering apparatus of the present invention, in the above (1), The substrate support portion has a mechanism that supports the substrate while cooling it when the substrate is moved relative to it. It is possible.

[0022] In the above configuration, the temperature rise in the underlying organic film during sputtering can be suppressed. This suppresses damage to the underlying organic film. Therefore, adverse effects on OLED devices can be reduced. Furthermore, it is effective in improving yield by reducing damage during OLED device manufacturing.

[0023] (8) The sputtering apparatus of the present invention, in the above (1), The aforementioned magnetic circuit is A central magnet portion is arranged in the central region of the yoke, extending linearly in a direction intersecting the width direction, The peripheral magnet portion is arranged around the central magnet portion, A circumferential magnet portion (circumferential magnet portion) is disposed between the central magnet portion and the peripheral magnet portion and surrounds the central magnet portion, It has, The central magnet portion, the peripheral magnet portion, and the peripheral magnet portion have parallel regions that are arranged parallel to each other in the width direction. It is possible.

[0024] In the above configuration, the magnetic circuit with this configuration forms a zero-vertical magnetic field region that disperses the current on the target surface over the required area ratio, thereby enabling the formation of a sputter particle dispersion region that disperses the emission of sputter particles on the target surface during sputtering. As a result, the penetration of argon particles / ions / plasma on the target surface during sputtering does not concentrate locally, but rather the number of argon particles / ions / plasma per unit area is averaged across the entire target surface, resulting in a distribution state close to that of a uniformly spread distribution. By forming a zero-vertical magnetic field region with a predetermined area ratio and an intensity range sufficient to adequately disperse the current on the target surface, the emission of sputtered particles on the target surface during sputtering can be dispersed. By forming a zero-vertical magnetic field region, the incident energy of sputtered particles on the underlying organic film during sputtering can be reduced. By forming a zero-vertical magnetic field region, local concentration of sputtered particles incident on the underlying organic film during sputtering can be suppressed. By forming a zero-vertical magnetic field region, damage to the underlying organic film during sputtering can be suppressed.

[0025] (9) The sputtering apparatus of the present invention, in the above (8), Multiple of the aforementioned circumferential magnet portions are arranged between the central magnet portion and the peripheral magnet portion. It is possible.

[0026] In the above configuration, a sufficiently large zero-vertical-magnetic-field region is formed in the width direction, and the area ratio of the zero-vertical-magnetic-field region is set within a predetermined range, allowing for sufficient dispersion of the current on the target surface. By forming a zero-vertical-magnetic-field region of a predetermined size in the width direction, i.e., the relative movement direction, the emission of sputtered particles along the target surface can be dispersed throughout the entire film deposition region, and the concentration of sputtered particles can be mitigated. This makes it possible to reduce damage to the entire film deposition region caused by sputtered particles. This suppresses damage to the underlying organic film throughout the entire film deposition region, improving the yield in OLED manufacturing. The improved yield in OLED manufacturing makes it possible to manufacture OLEDs by sputtering, which was not previously possible. Therefore, the amount of silver used in the manufacturing of OLED cathode electrodes can be reduced.

[0027] (10) The sputtering apparatus of the present invention, in the above (1), The target is formed of a silver alloy. It is possible.

[0028] This makes it possible to mitigate the concentration of sputtered particles when forming films made of silver alloy. This reduces damage to the film deposition area caused by sputtered particles. This suppresses damage to the underlying organic film, thereby improving the yield in OLED manufacturing. The improved yield in OLED manufacturing makes it possible to manufacture OLEDs using sputtering, which was not possible before. Therefore, the amount of silver alloy used in the manufacturing of OLED cathode electrodes can be reduced.

[0029] Furthermore, in the sputtering apparatus of the present invention, as described in (8) above, The sputtering cathode section is a magnetron sputtering cathode, The flat yoke has a surface and a central region, The magnetic circuit is provided on the surface of the yoke, The aforementioned magnetic circuit is The central magnet portion is arranged linearly in the central region of the yoke, The peripheral magnet portion is arranged around the central magnet portion, It has a circumferential magnet portion (surrounding magnet portion) positioned between the central magnet portion and the peripheral magnet portion, The central magnet portion, the peripheral magnet portion, and the peripheral magnet portion have parallel regions that are parallel to each other along the surface, The central magnet portion, the peripheral magnet portion, and the circumferential magnet portion are, The central magnet portion, the peripheral magnet portion, and the circumferential magnet portion are arranged such that their polarity differs between adjacent magnet portions at their respective tip ends in the direction away from the surface. The magnetic field profile in the parallel region is set such that, when observed from above the backing plate, the parallel magnetic field component B / / parallel to the backing plate is positive in the first region and negative in the second region, with the position corresponding to the central magnet portion as the boundary, in the width direction from the central magnet portion toward the peripheral magnet portion. In the width direction, if the half of the target is further divided into four parts, L1, L3, and L5, and the half of the target is further divided into three parts, L2 and L4, then the magnetic field profile of the vertical magnetic field component B⊥ crosses zero three times in the region of L2 to L4. It is possible.

[0030] In the magnetron sputtering cathode described above, in the width direction, the magnetic field profile observed from above the backing plate, from the central magnet portion toward the peripheral magnet portion, is set such that the parallel magnetic field component B / / has positive and negative values ​​in the first and second regions on either side of the boundary corresponding to the central magnet portion. Therefore, the magnetic field profile formed by the magnetic circuit in the target has a wide range of zero-perpendicular-field regions. As a result, the current on the target surface is sufficiently dispersed, and localized concentration of plasma on the target surface is mitigated. This generates plasma that spreads from the center of the target (near the region where the central magnet is located) to the periphery of the first region and the periphery of the second region. Therefore, by sputtering over a wider area on the target surface than before, the area from which sputtered particles are emitted can be made wider than before. Consequently, the emission of sputtered particles can be dispersed, thereby reducing the occurrence of damage to the entire film deposition area caused by sputtered particles.

[0031] Furthermore, in the sputtering apparatus of the present invention, as described in (8) above, The sputtering cathode section is a magnetron sputtering cathode, The aforementioned magnetic circuit is The central magnet section (central magnet section) erected in the central region of the yoke (bottom yoke), A peripheral magnet section (peripheral magnet section) is erected on the yoke so as to surround the central magnet section, Between the central magnet section and the peripheral magnet section, a surrounding magnet section (encircling magnet section, auxiliary magnet) is erected on the yoke along them and forms a magnetic field in which the vertical magnetic field B⊥ component in a plane parallel to the backing plate has a distribution that passes through the zero level three degrees. It has, The magnetic poles at the tips of the central magnet section, the peripheral magnet section, and the circumferential magnet section are arranged such that the polarity of the magnetic poles differs between adjacent magnets. The aforementioned circumferential magnet section is composed of a first circumferential magnet section and a second circumferential magnet section arranged along the outer circumference of the first circumferential magnet section. The tips of the central magnet portion, the peripheral magnet portion, and the circumferential magnet portion are arranged at the same height, and each tip is in contact with the back surface of the backing plate. It is possible.

[0032] Furthermore, the zero level of the vertical magnetic field component B⊥ is in the range of 0 to 1 / 5 (absolute value) of the intensity of the vertical magnetic field peak B⊥p. It is possible. Furthermore, in the width direction, the ratio of the width of the region between the central magnet portion and the peripheral magnet portion where the backing plate surface and the perpendicular magnetic field B⊥ component are at zero level to the width of the backing plate is 1 / 4 or more. It is possible. Furthermore, the ratio of the width W221 in the cross-section in the width direction of the central magnet portion, the width W223 in the cross-section in the width direction of the first circumferential magnet portion, the width W225 in the cross-section in the width direction of the second circumferential magnet portion, and the width W222 in the cross-section in the width direction of the peripheral magnet portion is W221:W223:W225:W222=1:0.9:0.9:1.1 And, The ratio of the distance D13 between the central magnet portion and the first circumferential magnet portion in the width direction, the distance D35 between the first circumferential magnet portion and the second circumferential magnet portion in the width direction, the distance D52 between the second circumferential magnet portion and the peripheral magnet portion in the width direction, and the distance D20 between the outer circumferential surface of the peripheral magnet portion and the end surface of the backing plate in the width direction is D13:D35:D52:D20=1.1:1.05:0.6:0.23 That is, It is possible.

[0033] In the above configuration, the vertical magnetic field component B⊥ passes through the zero level three times, with the central axis of the central magnet section flanking a point approximately midway between the central axis of the central magnet section and the periphery of the target. The central zero level passes approximately through the aforementioned midpoint from the central axis of the central magnet section. By configuring the magnetic circuit in this way, the magnetic field profile has a large region of zero vertical magnetic field. Therefore, the current on the target surface is sufficiently dispersed, and localized concentration of plasma on the target surface is mitigated. Therefore, by sputtering over a wider area on the target surface than before, the area from which sputtered particles are emitted can be made wider than before. Consequently, the emission of sputtered particles can be dispersed, thereby reducing the occurrence of damage to the entire film deposition area caused by sputtered particles.

[0034] Furthermore, because the center of the point where the vertical magnetic field component B⊥ passes through the zero level passes near the center from the center to the edge of the target, and because the vertical magnetic field strength peaks are balanced, a magnetic field profile with a zero vertical magnetic field region can be maintained even as sputtering progresses. As a result, even as sputtering progresses, a state of sufficient current dispersion on the target surface can be maintained, maintaining the dispersed state of sputtered particle emission and continuously reducing damage to the entire film deposition area caused by sputtered particles. [Effects of the Invention]

[0035] According to the present invention, it is possible to achieve the following effects: it is possible to form the cathode electrode layer of an OLED display device by sputtering, improve the uniformity of the cathode electrode layer of the OLED display device, improve the utilization efficiency of the silver material in the formation of the cathode electrode layer of the OLED display device, and reduce damage to the underlying organic film in the formation of the cathode electrode layer of the OLED display device. [Brief explanation of the drawing]

[0036] [Figure 1] This is a cross-sectional view illustrating an OLED manufactured by a first embodiment of the sputtering apparatus according to the present invention. [Figure 2] This is a schematic diagram showing a first embodiment of a sputtering apparatus according to the present invention. [Figure 3] This is a schematic diagram showing a magnetic circuit in a first embodiment of the sputtering apparatus according to the present invention. [Figure 4] Figure 3 shows a cross-sectional view of the line IV-IV. [Figure 5]This figure shows the magnetic field profile observed in the sputtering cathode section of the first embodiment of the sputtering apparatus according to the present invention, and shows a parallel magnetic field component B / / parallel to the target surface and a perpendicular magnetic field component B⊥ perpendicular to the target surface. [Figure 6] This figure schematically shows the current and plasma obtained in the sputtering cathode section of the first embodiment of the sputtering apparatus according to the present invention. [Figure 7] This figure schematically shows the equivalent circuit of the current obtained in the sputtering cathode section of the first embodiment of the sputtering apparatus according to the present invention. [Figure 8] This is a schematic diagram showing the magnetic circuit of a conventional sputtering apparatus. [Figure 9] This diagram illustrates the parallel magnetic field component B / / and the perpendicular magnetic field component B⊥ obtained in the sputtering cathode section of a conventional sputtering method. [Figure 10] This is a schematic diagram illustrating the current and plasma obtained in the sputtering cathode section of a conventional sputtering method. [Figure 11] This diagram schematically shows the equivalent circuit of the current obtained in the sputtering cathode section of a conventional method. [Figure 12] This is a schematic diagram showing a magnetic circuit in a second embodiment of the sputtering apparatus according to the present invention. [Figure 13] This is a cross-sectional view of the line XIII-XIII in Figure 12. [Figure 14] This figure shows the magnetic field profile observed in the sputtering cathode section of a second embodiment of the sputtering apparatus according to the present invention, and shows a parallel magnetic field component B / / parallel to the target surface and a perpendicular magnetic field component B⊥ perpendicular to the target surface. [Figure 15] This is a schematic diagram showing a third embodiment of the sputtering apparatus according to the present invention. [Figure 16] This is a schematic diagram showing a fourth embodiment of the sputtering apparatus according to the present invention. [Figure 17] This is a schematic plan view showing a fifth embodiment of the sputtering apparatus according to the present invention. [Figure 18]This is a schematic diagram showing a sixth embodiment of the sputtering apparatus according to the present invention. [Modes for carrying out the invention]

[0037] Hereinafter, a first embodiment of the sputtering apparatus according to the present invention will be described with reference to the drawings. Figure 1 is a cross-sectional view illustrating an OLED manufactured using the sputtering apparatus in this embodiment. In the figure, the symbol OLED represents an OLED device.

[0038] The OLED device is a top-emission type (TEOLED: top emission organic light emitting device). The OLED device may also be a WOLED or TOLED. The OLED device is shown as OLED in Figure 1. The OLED device consists of an anode electrode layer And, a hole injection layer HIL, a hole transport layer HTL, an emissive layer EML, an electron transport layer ETL, an electron injection layer EIL, a cathode electrode Ctd, and a refractive aid layer CPL, all stacked on a substrate Sub.

[0039] The substrate Sub can be a polysilicon or a glass substrate. The anode electrode layer And is formed from ITO (indium tin oxide), gold, silver, etc. The light-emitting layer (EML) may include, for example, PPV (poly(phenylenevinylene)). The hole transport layer (HTL) helps to match the highest occupied molecular orbital (HOMO) of the light-emitting layer (EML) with the work function of the anode electrode layer (And), i.e., the hole energy level. The hole transport layer (HTL) may include, for example, PEDOT:PSS (polystyrene sulfonic acid-added polyethylene dioxythiophene). The electron transport layer (ETL) may contain metals such as calcium, magnesium, or barium. The electron injection layer (EIL) may contain barium fluoride or fluorides or oxides of other metals. The refractive auxiliary layer (CPL) is an auxiliary layer placed on top of the light-emitting functional layer.

[0040] The hole injection layer (HIL), hole transport layer (HTL), light emission layer (EML), electron transport layer (ETL), and electron injection layer (EIL) constitute the underlying organic film. The cathode electrode layer Ctd is formed from silver. The cathode electrode layer Ctd is laminated on top of the underlying organic film.

[0041] In top-emission devices, these layers can be at least partially transparent at the designed emission wavelength. The layers other than the cathode electrode Ctd are made of known materials and can be deposited by known methods such as vapor deposition, sputtering, and inkjet printing. Furthermore, OLED devices may have additional layers, such as optical interference layers and spacer layers, as appropriate.

[0042] Figure 2 is a schematic diagram showing the sputtering apparatus in this embodiment. The sputtering apparatus 10 according to this embodiment moves a substrate Sub on which an underlying organic film is formed relative to a sputtering source, and deposits a cathode electrode layer Ctd of an OLED device by sputtering. As shown in Figure 2, the sputtering apparatus 10 according to this embodiment comprises a film deposition chamber 11, an atmosphere control unit 12, a relative movement unit 13, and a plurality of sputtering cathode units 100.

[0043] The deposition chamber 11 can be sealed in a vacuum atmosphere or the like. The deposition chamber 11 houses a relative movement unit 13 and a plurality of sputtering cathode units 100 inside. The deposition chamber 11 is connected to an atmosphere control unit 12. The atmosphere control unit 12 creates a sputtering atmosphere inside the film deposition chamber 11. The atmosphere control unit 12 can evacuate the inside of the film deposition chamber 11 to a near-vacuum state. The atmosphere control unit 12 can remove moisture and other contaminants from inside the film deposition chamber 11 without damaging the underlying organic film. The atmosphere control unit 12 can supply sputtering gas such as argon into the film deposition chamber 11.

[0044] The relative movement unit 13 moves the sputtering cathode unit 100 and the substrate Sub relative to each other in the relative movement direction X along the surface Ss. The relative movement unit 13 is capable of supporting and moving the substrate Sub on which the underlying organic film is formed. The relative movement unit 13 is capable of supporting and moving the substrate Sub together with the mask Ms. The relative movement unit 13 may have a substrate support unit 13a that supports the substrate Sub. The substrate support unit 13a may have a cooling unit 13b that cools the substrate Sub. The cooling unit 13b can cool the substrate Sub during the sputtering process and control the temperature of the substrate Sub and the mask Ms so that they do not rise.

[0045] Although the relative movement section 13 is shown to move the substrate Sub, any configuration that allows for movable film deposition by relatively moving the sputtering cathode section 100 and the substrate Sub is acceptable. The relative movement section 13 is configured for pass-by film deposition. The relative movement section 13 can also be configured so that the sputtering cathode section 100 moves.

[0046] The mask Ms is mainly formed from materials such as Invar or SUS. The mask Ms covers the substrate Sub, separating the film-forming region from the non-film-forming region, and is extremely thin, only tens to hundreds of micrometers thick, making it susceptible to deformation by heat. Therefore, it is made of a material with a low coefficient of thermal expansion.

[0047] The sputtering cathode section 100 emits sputtered silver particles toward the substrate Sub within the film deposition chamber 11. Multiple sputtering cathode sections 100 are arranged in a line in the relative movement direction X. Two sputtering cathode sections 100 adjacent to each other in the relative movement direction X constitute a sputtering pair section 100p. In Figure 2, two sputtering cathode sections 100 are shown in the X direction. In this embodiment, an even number of sputtering cathode sections 100 can be present. Multiple sputtering cathode sections 100 are arranged side by side such that the target surfaces 141, described later, lie on the same plane. The target surfaces 141 are arranged along the XY plane. The sputtering cathode section 100 is arranged with its longitudinal direction aligned with the Y direction.

[0048] The sputtering cathode section 100 includes a yoke 110, a magnetic circuit 120, a backing plate 130, a target 140, a power supply unit 150, and a cathode rotation mechanism 160.

[0049] The yoke 110 is a flat plate oriented along the XY plane. The yoke 110 is a yoke commonly used in magnetron sputtering cathodes, and the type of yoke is not limited. For this yoke 110, for example, ferritic stainless steel can be used. Furthermore, their size is, for example, about 100mm to 200mm in width. The magnetic circuit 120 is provided on the surface of the yoke 110. The magnetic circuit 120 will be described later.

[0050] The backing plate 130 is placed on top of the magnetic circuit 120. The relative movement direction X of the backing plate 130 is the width direction. The target 140 is placed on the surface of the backing plate 130. The backing plate 130 is a backing plate used in a general magnetron sputtering cathode, and the type of backing plate is not limited. The backing plate 130 is connected to the power supply unit 150. Sputtering power is applied to the backing plate 130. In this embodiment, the case in which a backing plate 130 is used is described, but in the present invention, it is also possible to omit the backing plate 130 and place the target 140 above the magnetic circuit 120. In this case, the same effect as when the backing plate 130 is used can be obtained.

[0051] The target 140 is provided on the backing plate 130. The target 140 is a flat plate made of silver. The target 140 emits sputtered particles from its target surface 141. The target surface 141 of the target 140 faces the substrate Sub. The power supply unit 150 supplies sputtering power to the backing plate 130. The power supply unit 150 is a DC power supply. In the figure, the power supply unit 150 is shown to be arranged in accordance with each backing plate 130. That is, one sputtering cathode unit 100 is shown to have a power supply unit 150. In this embodiment, the power supply unit 150 can also be configured to be connected to multiple sputtering cathode units 100.

[0052] The cathode rotation mechanism 160 allows the sputtering cathode section 100 to be rotated and tilted around an axis 161 along the Y direction. The axis 161 is located in the center of the yoke 110 in the X direction when viewed in the Z direction. The axis 161 is parallel in the two sputtering cathode sections 100 that constitute the sputtering pair section 100p. The axis 161 is spaced apart in the X direction in the two sputtering cathode sections 100 that constitute the sputtering pair section 100p.

[0053] The distance between two adjacent sputtering cathode sections 100 along their axes 161 in the X direction is called the sputtering cathode pitch. The sputtering cathode pitch is set in the range of 200 mm to 500 mm. The ratio of the sputtering cathode pitch to the X-direction dimension (width dimension) of the target 140 is set in the range of 0.2 to 0.99.

[0054] The cathode rotation mechanism 160 rotates the two sputtering cathode sections 100 that constitute the sputtering pair section 100p in conjunction with each other. The cathode rotation mechanism 160 allows the two sputtering cathode sections 100 constituting the sputtering pair section 100p to rotate and tilt so that the two target surfaces 141 face each other.

[0055] The cathode rotation mechanism 160 allows the two target surfaces 141 to rotate at the same angle θ from a flush state where they are located on the same plane to a state where they face each other. The sputtering pair section 100p allows the two target surfaces 141 to tilt in opposite directions around the axis 161. In Figure 2, the left sputtering cathode section 100 is shown with a dashed line after being rotated clockwise by an angle θ. In Figure 2, the right sputtering cathode section 100 is shown with a dashed line after being rotated counterclockwise by an angle θ. The angle θ can be in the range of 0° to 30°.

[0056] The sputtering pair section 100p is rotatable around axes 161 parallel to each other along a direction Y that intersects the relative movement direction X, with respect to both sputtering cathode sections 100. The sputtering pair section 100p can have two target surfaces 141 positioned on the same plane along the relative movement direction X. The sputtering pair section 100p can have two target surfaces 141 rotated by the same angle θ.

[0057] The sputtering pair section 100p, specifically the two sputtering cathode sections 100, can each have the same configuration. Adjacent sputtering pair sections 100p in the X direction can have the same angle θ. Adjacent sputtering pair sections 100p in the X direction can have different angles θ. Adjacent sputtering pair sections 100p in the X direction can have the same angle θ=0°, meaning their respective target surfaces 141 are located on the same plane. Furthermore, multiple sputtering cathode sections 100 can all have the same configuration.

[0058] Figure 3 is a schematic diagram showing the magnetic circuit of the sputtering apparatus in this embodiment. Figure 4 is a cross-sectional view taken along line IV-IV in Figure 3. As shown in Figures 3 and 4, the magnetic circuit 120 includes a central magnet section 121, a peripheral magnet section (surrounding magnet section) 122, a circumferential magnet section (surrounding magnet section) 123, a circumferential magnet section (surrounding magnet section) 124, and a circumferential magnet section (surrounding magnet section) 125.

[0059] The central magnet section 121 is arranged in a straight line extending in the Y direction within the central region (parallel region) S1 of the yoke 110. The central magnet section 121 is linearly continuous with the central region S1 in the Y direction. The central magnet section 121 has the same width dimension in the X direction along the entire length of the central region S1. Here, the width dimension is the X-direction dimension in the central region S1. The central magnet section 121 has enlarged ends 121a at both ends, which are enlarged in the X direction. The tip of the central magnet section 121 in the Z direction, facing the target 140, is the south pole. The enlarged ends 121a are arranged in the end region S2, which is outside the central region S1 in the Y direction. The tip of the enlarged ends 121a in the Z direction has the same magnetic pole as the straight central magnet section 121. The tip of the enlarged ends 121a in the Z direction is the south pole. The direction in which the central magnet section 121 extends (Y) is referred to as the axial direction of the sputtering cathode section 100.

[0060] The peripheral magnet portion 122 is positioned on the surface of the yoke 110 so as to surround the central magnet portion 121. The peripheral magnet portion 122 has a rectangular outer contour that follows the contour of the yoke 110 when viewed in the Z direction. The peripheral magnet portion 122 has a continuous contour that follows the contour of the yoke 110 when viewed in the Z direction. The peripheral magnet portion 122 has a rectangular inner contour with rounded corners when viewed in the Z direction. The tip of the peripheral magnet portion 122 in the Z direction facing the target 140 has a different magnetic pole than the central magnet portion 121. The tip of the peripheral magnet portion 122 in the Z direction is the north pole.

[0061] In the central region S1, the peripheral magnet portion 122 is spaced apart from the central magnet portion 121 in the X direction. In the end region S2, which is outside the central region S1 in the Y direction, the peripheral magnet portion 122 is bent at the corner portion so that its inner circumferential surface surrounds the central magnet portion 121. At the center of the end region S2 in the X direction, the peripheral magnet portion 122 is arranged in a straight line extending in the X direction. In the central region S1, the peripheral magnet portion 122 is parallel to the central magnet portion 121.

[0062] The peripheral magnet portion 122 has a larger width dimension than the central magnet portion 121. Here, the width dimension of the peripheral magnet portion 122 is the X-direction dimension in the central region S1. The width dimension of the peripheral magnet portion 122 is the Y-direction dimension near the center of the X-direction in the end region S2. The peripheral magnet portion 122 has the same X-direction width dimension along the entire length of the central region S1. The peripheral magnet portion 122 has the same Y-direction width dimension in the end region S2, except for the corners.

[0063] The circumferential magnet sections 123 to 125 are positioned on the surface of the yoke 110 between the central magnet section 121 and the peripheral magnet section 122. All of the circumferential magnet sections 123 to 125 are arranged to orbit the central magnet section 121 when viewed in the Z direction. All of the circumferential magnet sections 123 to 125 have an arrangement that continuously orbits the central magnet section 121 when viewed in the Z direction.

[0064] The circumferential magnet sections 123 to 125 are arranged in a triple orbit between the central magnet section 121 and the peripheral magnet section 122. The circumferential magnet sections 123 to 125 all have a larger width dimension than the central magnet section 121. The circumferential magnet sections 123 to 125 all have a smaller width dimension than the peripheral magnet section 122. Here, the width dimension of the circumferential magnet sections 123 to 125 is the X-direction dimension in the central region S1. The width dimension of the circumferential magnet sections 123 to 125 is the Y-direction dimension near the center of the X-direction in the end region S2. The circumferential magnet sections 123 to 125 have a triple-circumferential inner magnet section 123, a middle magnet section 124, and an outer magnet section 125, located between the central magnet section 121 and the peripheral magnet section 122. The inner circumferential magnet section 123, the middle circumferential magnet section 124, and the outer circumferential magnet section 125 all have the same width dimension. The width dimension of the circumferential magnet sections 123 to 125 is the X-direction dimension in the central region S1. The width dimension of the circumferential magnet sections 123 to 125 is the Y-direction dimension near the center of the X-direction in the end region S2.

[0065] The inner circumferential magnet section 123 is positioned adjacent to the central magnet section 121. The inner circumferential magnet section 123 is positioned to orbit around the central magnet section 121 so as to be in contact with it. The inner circumferential magnet section 123 is positioned to orbit around the enlarged end portion 121a so as to be in contact with it. In the central region S1, the inner circumferential magnet section 123 is in contact with the central magnet section 121 when viewed in the Z direction. The inner circumferential magnet section 123 is parallel to the central magnet section 121 and the peripheral magnet section 122 in the central region S1. The inner circumferential magnet section 123 is parallel to the peripheral magnet section 122 in the end region S2. The inner circumferential magnet section 123 has the same width dimension in the X direction along the entire length of the central region S1. The inner circumferential magnet section 123 has the same width dimension in the Y direction in the end region S2, except for the corners. The inner circumferential magnet section 123 has the same magnetic pole as the peripheral magnet section 122 at its Z-direction tip. The inner circumferential magnet section 123 has a different magnetic pole than the central magnet section 121 at its Z-direction tip. The inner circumferential magnet section 123 has an N pole at its Z-direction tip.

[0066] The middle circumferential magnet section 124 is positioned at a distance from the inner circumferential magnet section 123. The middle circumferential magnet section 124 is positioned at a distance from the outer circumferential magnet section 125. The middle circumferential magnet section 124 does not contact the circumferential magnet section 123 or the circumferential magnet section 125 in either the X or Y direction. The middle circumferential magnet section 124 does not contact the central magnet section 121 or the peripheral magnet section 122 in either the X or Y direction. The central circumferential magnet section 124 has the same width dimension in the X direction along the entire length of the central region S1. The central circumferential magnet section 124 has the same width dimension in the Y direction in the end region S2. The central circumferential magnet section 124 has the same magnetic pole at its Z-direction tip as the peripheral magnet section 122. The central circumferential magnet section 124 has the same magnetic pole at its Z-direction tip as the circumferential magnet section 123. The central circumferential magnet section 124 has a different magnetic pole at its Z-direction tip than the central magnet section 121. The central circumferential magnet section 124 has an N pole at its Z-direction tip.

[0067] The outer peripheral magnet section 125 is positioned spaced apart from the middle peripheral magnet section 124. In the central region S1, the outer peripheral magnet section 125 is spaced apart from the middle peripheral magnet section 124 when viewed in the Z direction. In the end region S2, the outer peripheral magnet section 125 is spaced apart from the middle peripheral magnet section 124 when viewed in the Z direction. The outer peripheral magnet portion 125 is positioned adjacent to the inner circumference of the peripheral magnet portion 122 when viewed in the Z direction. The outer peripheral magnet portion 125 is adjacent to and continuous with the entire inner circumference of the peripheral magnet portion 122 when viewed in the Z direction. The entire circumference of the outer peripheral magnet portion 125 is in contact with the inner circumference of the peripheral magnet portion 122. When viewed in the Z direction, the entire outer circumference of the outer peripheral magnet portion 125 is in contact with the inner circumference of the peripheral magnet portion 122. In the central region S1, the outer peripheral magnet portion 125 is in contact with the peripheral magnet portion 122 when viewed in the Z direction. In the end region S2, the outer peripheral magnet portion 125 is in contact with the peripheral magnet portion 122 when viewed in the Z direction.

[0068] The outer circumferential magnet section 125 has the same width dimension in the X direction along the entire length of the central region S1. The outer circumferential magnet section 125 has the same width dimension in the Y direction in the end region S2. The outer circumferential magnet section 125 has a different magnetic pole at its Z-direction tip compared to the peripheral magnet section 122. The outer circumferential magnet section 125 has a different magnetic pole at its Z-direction tip compared to the inner circumferential magnet section 123. The outer circumferential magnet section 125 has a different magnetic pole at its Z-direction tip compared to the middle circumferential magnet section 124. The outer circumferential magnet section 125 has the same magnetic pole at its Z-direction tip compared to the central magnet section 121. The outer circumferential magnet section 125 has the S pole at its Z-direction tip.

[0069] The central magnet section 121 has the same Z-direction distance from the surface of the yoke 110 to its tip in the Z-direction, i.e., the same Z-direction height as the peripheral magnet section 122. The peripheral magnet section 122 has the same Z-direction height as the central magnet section 121 all around its circumference. The central magnet section 121 has the same Z-direction height all around its entire length. The inner circumference magnet section 123 has the same height in the Z direction all around its circumference. The middle circumference magnet section 124 has the same height in the Z direction all around its circumference. The outer circumference magnet section 125 has the same height in the Z direction all around its circumference.

[0070] The inner circumferential magnet section 123, the middle circumferential magnet section 124, and the outer circumferential magnet section 125 all have the same height in the Z direction. The inner circumferential magnet section 123, the middle circumferential magnet section 124, and the outer circumferential magnet section 125 all have a height in the Z direction lower than that of the central magnet section 121. The Z-direction tips of the inner circumferential magnet section 123, the middle circumferential magnet section 124, and the outer circumferential magnet section 125 are all closer to the surface of the yoke 110 compared to the central magnet section 121. The inner circumferential magnet section 123, the middle circumferential magnet section 124, and the outer circumferential magnet section 125 all have a height in the Z direction lower than that of the peripheral magnet section 122.

[0071] In the central region S1, the peripheral magnet section 122, outer peripheral magnet section 125, middle peripheral magnet section 124, inner peripheral magnet section 123, central magnet section 121, inner peripheral magnet section 123, middle peripheral magnet section 124, outer peripheral magnet section 125, and peripheral magnet section 122 are arranged in the X direction. In the central region S1, the central magnet section 121, outer peripheral magnet section 125, middle peripheral magnet section 124, inner peripheral magnet section 123, central magnet section 121, inner peripheral magnet section 123, middle peripheral magnet section 124, outer peripheral magnet section 125, and central magnet section 121 are parallel to each other in the X direction. The central region S1 is a parallel region in which each magnet section of the magnetic circuit 120 is arranged in parallel.

[0072] In the central region S1, the peripheral magnet portion 122 and the outer peripheral magnet portion 125 are in contact with each other in the X direction. In the central region S1, the outer peripheral magnet portion 125 and the middle peripheral magnet portion 124 are separated from each other in the X direction. In the central region S1, the middle peripheral magnet portion 124 and the inner peripheral magnet portion 123 are separated from each other in the X direction. In the central region S1, the distance in the X direction between the outer peripheral magnet section 125 and the middle peripheral magnet section 124 is greater than the distance in the X direction between the middle peripheral magnet section 124 and the inner peripheral magnet section 123.

[0073] The magnetic circuit 120 can be configured such that each of the magnet sections 121 to 125 uses, for example, anisotropic sintered magnets mainly composed of neodymium, iron, and boron, samarium cobalt magnets, ferrite magnets, etc.

[0074] Figure 5 shows the magnetic field profile observed in the sputtering cathode section of the sputtering apparatus of this embodiment, and illustrates the parallel magnetic field component B / / parallel to the target surface of the target and the perpendicular magnetic field component B⊥ perpendicular to the target surface. The magnetic circuit 120 is capable of forming a magnetic field profile as shown in Figure 5. This magnetic field profile can be measured using a Gaussmeter in the range of 11 mm to 15 mm above the surface of the magnetic circuit 120. For example, when a 5 mm thick backing plate is used, the magnetic field profile shown is measured in the range of 6 mm to 10 mm above the surface of the backing plate 130.

[0075] In Figure 5, the horizontal axis X represents the distance from the axis of the central magnet section 121. The vertical axis represents the magnetic flux density. In addition, the 0 mm position on the horizontal axis of Figure 5 corresponds to the center position of the central magnet section 121. In Figure 5, three parallel magnetic field component degrees B / / and three perpendicular magnetic field component degrees B⊥ are shown. These represent varying Z-direction distance T / M between the magnetic circuit 120 and the target 140. It can be seen that the trend of the magnetic field profile does not change even at different distances T / M. To adjust the distance between the target 140 and the magnetic circuit 120, a control device that moves the magnetic circuit 120 in the Z-axis direction can be used.

[0076] The magnetic field profile formed in the central region S1 is observed from above the backing plate 130 in the X direction, from the central magnet section 21 toward the peripheral magnet section 22. This magnetic field profile is set such that the parallel magnetic field component B / / in the direction parallel to the plane parallel to the backing plate 130 is positive in the first region (one region) and negative in the second region (the other region), with the boundary being the position corresponding to the central magnet section 121. Here, the magnetic field profile observed from above the backing plate 130 refers to the magnetic field profile observed from the position where the target is placed.

[0077] The magnetic field profile generated on the target surface 141 of the target 140 (above the backing plate 130) by the magnetic circuit 120 is as follows. First, we will explain the parallel magnetic field component B / / , which is the magnetic field component located above the backing plate 130 and in a direction parallel to the target surface 141 of the target 140.

[0078] As shown in Figure 5, the parallel magnetic field component B / / is set to be positive in the first region and negative in the second region, extending from the central magnet section 121 to the peripheral magnet section 122. Furthermore, the parallel magnetic field component B / / is distributed point-symmetrically with the origin in Figure 5 as the center of symmetry. Therefore, the region in which current flows on the surface 141 above the backing plate 130 of the target 140 can be widened. In Figure 5, the first region refers to the second and third quadrants, and the second region refers to the first and fourth quadrants.

[0079] It is preferable that the parallel magnetic field component B / / is set so that its sign is reversed (inverted) near the peripheral magnet portion 22. That is, it is preferable that the parallel magnetic field component B / / is set so that it is negative in the first region and positive in the second region near the peripheral magnet portion 122.

[0080] The parallel magnetic field component B / / has zero magnetic field strength at the origin M0, where X=0 coincides with the axis of the central magnet section 121. As X changes in the negative direction from point M0, the parallel magnetic field component B / / increases, reaching a positive upper peak value at point M1. As X changes in the negative direction from point M1, the parallel magnetic field component B / / decreases slightly, reaching a lower peak value at point M3. As X changes in the negative direction from point M3, the parallel magnetic field component B / / increases slightly, reaching a positive upper peak value at point M5. The positive upper peak value at point M1 and the positive upper peak value at point M5 are approximately equal magnetic field strength values.

[0081] As X changes in the negative direction from point M5, the parallel magnetic field component B / / decreases, and at point M6, the magnetic field strength becomes zero. As X changes in the negative direction from point M6, the parallel magnetic field component B / / decreases further. The parallel magnetic field component B / / has a point-symmetric profile with respect to the origin M0. At point M6, which coincides with the outer edge of the peripheral magnet portion 122, the magnetic field strength of the parallel magnetic field component B / / becomes zero.

[0082] Here, it is preferable that the upper peak value of the parallel magnetic flux density B / / in the direction parallel to the surface 141 above the target 140 is 10 mT or more and 30 mT or less. In the above explanation, the magnetic field profile in the first region was described, but the magnetic field profile in the second region is the same as in the first region. However, the sign of the horizontal magnetic flux density B / / value in the second region is inversely related to the sign of the horizontal magnetic flux density B / / value in the first region.

[0083] Next, we will explain the perpendicular magnetic field component B⊥, which is the magnetic field component perpendicular to the target surface 141 of the target 140.

[0084] In the central region S1, the magnetic field profile formed by the magnetic circuit 120 has a region of zero perpendicular magnetic field. The region of zero perpendicular magnetic field is the region where the perpendicular magnetic field component B⊥ in the direction perpendicular to the plane parallel to the surface of the target 140 or backing plate 130 is near zero. The perpendicular magnetic field component B⊥ is the magnetic field component in the direction perpendicular to the target surface 141, but even if the target surface 141 is no longer planar due to erosion as the sputtering progresses, it still refers to the magnetic field component in the same direction, so it is written as the magnetic field component in the direction perpendicular to the plane parallel to the surface of the backing plate 130.

[0085] Specifically, the vertical magnetic field component B⊥ is smallest at point L0, where X=0 coincides with the axis of the central magnet section 121. The vertical magnetic field component B⊥ has a negative peak value at point L0. As X changes in the negative direction, the vertical magnetic field component B⊥ increases, and at point L1, the magnetic field strength is near zero. Furthermore, as X changes in the negative direction from point L1, the vertical magnetic field component B⊥ changes within a range where the magnetic field strength is near zero, passing through points L2, L3, L4, and L5.

[0086] As X changes in the negative direction from point L5, the magnetic field component B⊥ increases in strength positively, reaching a peak B⊥p at point L6. As X changes in the negative direction from point L5, the magnetic field component B⊥ decreases in strength. The profile of the vertical magnetic field component B⊥ is symmetrical with respect to the vertical axis in the X-axis direction. The vertical magnetic field component B⊥ reaches a peak B⊥p at point L6, which coincides with the outer edge of the peripheral magnet portion 122.

[0087] Point L0 has the same X value as point M0. Point L3 has the same X value as point M3. Point L6 has the same X value as point M6. Point L1 is further away from point M0 in the negative X direction than point M1. Point L5 is closer to point M0 in the positive X direction than point M5.

[0088] The region from point L1 to point L5 is the zero-perpendicular magnetic field region. In the zero-perpendicular magnetic field region, the profile of the magnetic field component B⊥ has a ratio of 2 / 5 or greater to the length of the zero-perpendicular magnetic field region in the X direction, to the distance between the vertical magnetic field peaks B⊥p in the X direction. In other words, the distance from point L1 to point L5, which is the length of the zero-perpendicular magnetic field region, is 2 / 5 or greater to the distance between each of the points L6 located on either side of the origin L0 in the X direction. In other words, the distance from point L1 to point L5 is 2 / 5 or more of the distance from point L0 to point L6.

[0089] Furthermore, the intensity (absolute value) of the vertical magnetic field component B⊥ in the zero vertical magnetic field region is preferably in the range of 0mT to 5mT, or in the range of 0mT to 3mT, or in the range of 0mT to 2mT. The intensity of the vertical magnetic field peak B⊥p is preferably in the range of 20mT to 40mT. In the zero-perpendicular-magnetic-field region, the intensity of the perpendicular magnetic field component B⊥ is preferably such that the ratio B⊥ / B⊥p to the intensity of the perpendicular magnetic field peak B⊥p is in the range of 0 to 1 / 5.

[0090] The vertical magnetic field component B⊥ forms a region of zero vertical magnetic field. The region of zero vertical magnetic field is where points L1, L3, and L5 further divide half of target 140 into four parts in the X direction. Simultaneously, the region of zero vertical magnetic field is where points L2 and L4 further divide half of target 140 into three parts in the X direction. Alternatively, points L1, L3, and L5 may divide half of target 140 into four equal parts in the X direction. Alternatively, points L2 and L4 may divide half of target 140 into three equal parts in the X direction.

[0091] Furthermore, if the intensity of the vertical magnetic field component B⊥ at point L3 is zero, the magnetic field profile of the vertical magnetic field component B⊥ in the zero vertical magnetic field region may cross zero three times at points L1, L3, and L5, respectively. Note that if the intensity of the vertical magnetic field component B⊥ at point L3 is slightly off from zero, it is sufficient that the magnetic field profile of the vertical magnetic field component B⊥ in the zero vertical magnetic field region crosses zero three times in the region from points L1 to L5.

[0092] Alternatively, if the intensity of the vertical magnetic field component B⊥ at point L3 is slightly deviated from zero, the magnetic field profile of the vertical magnetic field component B⊥ in the zero vertical magnetic field region may be zero twice in the region from point L1 to point L5. If the intensity of the vertical magnetic field component B⊥ at point L3 is slightly deviated from zero, the magnetic field profile of the vertical magnetic field component B⊥ in the zero vertical magnetic field region may be zero once in the region from point L1 to point L5. Even in these cases, the ratio value B⊥ / B⊥p is within the range mentioned above.

[0093] Figure 6 is a schematic diagram showing the current and plasma obtained in the sputtering cathode section of the sputtering apparatus of this embodiment. In the region of zero vertical magnetic field, the parallel magnetic field component B / / and the vertical magnetic field component B⊥ have approximately the same intensity. That is, in the region of zero vertical magnetic field, as shown in Figure 6, the magnetic field file of the parallel magnetic field component B / / traces a line along the horizontal axis. In the region of zero vertical magnetic field, the slope of the parallel magnetic field component B / / is small. In the region of zero vertical magnetic field, as shown in Figure 6, the magnetic field file of the vertical magnetic field component B⊥ traces a line along the horizontal axis. In the region of zero vertical magnetic field, the slope of the vertical magnetic field component B⊥ is small.

[0094] Therefore, in the zero-perpendicular-magnetic-field region, as shown in Figure 6, plasma P is widely present on the target surface 141 of target 140. In other words, on the target surface 141 of target 140, plasma P, i.e., argon ions Ar +The area of ​​incidence is widened. The current IP flows dispersedly through the surface where the perpendicular magnetic field component B⊥ of the target is close to 0. By widening and dispersing the region over which the current IP flows on the target surface 141 of the target 140, local concentration can be mitigated. Figure 7 shows an image of the current IP and equivalent circuit in the zero-vertical-magnetic-field region.

[0095] In other words, the zero-perpendicular-magnetic-field region is a target surface current dispersion region that disperses the current at the target surface 141 of the target 140. This target surface current dispersion region forms a sputtered particle dispersion region. The sputtered particle dispersion region disperses the emission of sputtered particles at the target surface 141 of the target 140 during sputtering. The sputtered particle dispersion region can reduce localized damage by dispersing the incident energy of the sputtered particles. The sputtered particle dispersion region can suppress localized concentration of sputtered particles incident during sputtering. The sputtered particle dispersion region can suppress localized temperature rise in the film deposition region.

[0096] In contrast, as shown in Figure 8, we will compare and examine a magnetic circuit 20 that does not form a zero-perpendicular-magnetic-field region. As shown in Figure 8, the magnetic circuit 20 is exemplified by a central magnet section 21, a peripheral magnet section 22, and a circumferential magnet section 23, but there are no conditions other than not forming a zero-perpendicular-magnetic-field region, and it is merely a schematic representation. Here, the reference numerals of this embodiment will be used to indicate parts other than the magnetic circuit 20. As shown in Figure 9, the magnetic circuit 20 has only one instance where the magnetic field file of the formed vertical magnetic field component B⊥ crosses the horizontal axis, which is in the X-minus region. In the magnetic field file of the vertical magnetic field component B⊥, the vertical magnetic field component B⊥ is near zero only at the point where the magnetic field file crosses the horizontal axis. In other words, a vertical magnetic field zero point is formed, but a vertical magnetic field zero region is not formed.

[0097] In this case, the current IPc obtained in the sputtering cathode and the plasma P are extremely locally concentrated, as shown in Figure 10. In a magnetron sputtering cathode section having a magnetic field profile where only a zero point of the vertical magnetic field is formed, the plasma P concentrates near the zero point of the vertical magnetic field where the intensity of the vertical magnetic field component B⊥ on a plane parallel to the backing plate 130 becomes 0 on the target surface 141 of the target 140. Figure 11 shows the current IPc at the zero point of the vertical magnetic field in this case, and an image of the equivalent circuit.

[0098] Comparing Figure 7 and Figure 11, it can be seen that in a magnetic field profile where a zero-perpendicular-magnetic-field region is formed, the current IP flowing per unit area on the target surface 141 of target 14 is smaller than the current IPc flowing per unit area on the target surface 141 of target 140 in a magnetic field profile where only zero-perpendicular-magnetic-field points are formed. In the above explanation, we described the magnetic field profile in the region X≦0, but the magnetic field profile in the region X≧0 is the same as in the region X≦0.

[0099] In this embodiment, the sputtering apparatus 10 prepares a substrate Sub with an underlying organic film formed on it, and a target 140, etc., in the deposition chamber 11. The substrate support section 13a supports the substrate Sub while cooling it with the cooling section 13b. The deposition chamber 11 is sealed, and the atmosphere control section 12 reduces the pressure inside the deposition chamber 11 before supplying sputtering gas such as argon into the deposition chamber 11. In the sputtering cathode section 100, the cathode rotation mechanism 160 sets the angle θ. The magnetic circuit 120 forms a magnetic field profile in which the aforementioned zero-vertical-magnetic-field region is formed. The power supply unit 150 applies DC power of a predetermined voltage to the backing plate 130. The sputtering pair unit 100p generates plasma P. The relative movement unit 13 moves the substrate Sub relative to the sputtering cathode unit 100. Sputtered particles are ejected from target 140, and these sputtered particles enter the film deposition area of ​​substrate Sub, causing a silver thin film (silver layer) to be deposited on the underlying organic film by sputtering.

[0100] The sputtering apparatus 10 of this embodiment can disperse the current IP on the target surface 141 of the target 140 by forming a magnetic field profile having the aforementioned zero-vertical-magnetic-field region using the magnetic circuit 120. This makes it possible to form a sputter particle dispersion region that can disperse the emission of sputtered particles on the target surface 141 of the target 140 during sputtering. As a result, the entry of argon particles / ions / plasma on the target surface 141 of the target 140 during sputtering does not concentrate locally, but rather the number of argon particles / ions / plasma entering per unit area of ​​the target surface 141 of the target 140 is averaged out and spread out across the entire target surface 141, resulting in a distribution state close to that of uniform distribution.

[0101] Therefore, sputtering can be performed over a wider area on the target surface 141 of the target 140 than in the conventional method, making it possible to widen the area from which sputtered particles are emitted. Consequently, the emission direction of the sputtered particles can be dispersed. This reduces the incident energy of sputtered particles on the underlying organic film during sputtering. It suppresses localized concentration of sputtered particles on the underlying organic film during sputtering. It suppresses damage to the underlying organic film during sputtering.

[0102] Furthermore, by having sputtering aerator sections 100p that are inclined toward opposing directions on the target 140, the emission of sputtered particles from the target surface 141 of the target 140 during sputtering can be dispersed. By supplying DC power from the power supply unit 150 and performing sputtering, the voltage and direction of the electric field do not change. This prevents excessive movement of ions, such as excessive movement of ions in the plasma atmosphere, which can occur with periodic power supplies like high-frequency power supplies. This suppresses damage to the underlying organic film. By cooling the substrate Sub with the cooling unit 13b while sputtering, damage to the underlying organic film can be suppressed.

[0103] These measures suppress damage to the underlying organic film caused by sputtered particles throughout the entire film deposition process, thereby improving the yield in OLED manufacturing. This improved yield makes it possible to manufacture OLEDs using sputtering, which was previously not feasible. Consequently, the amount of silver used in the manufacturing of OLED cathode electrodes can be reduced.

[0104] The dimensional relationships in the magnetic circuit 120 in this embodiment are shown below as an example. As shown in Figure 3, the dimensions in the X direction can be set as follows: the width dimension W121 of the central magnet section 121, the width dimension W122 of the peripheral magnet section 122, the width dimension W123 of the circumferential magnet section 123, the width dimension 124 of the circumferential magnet section 124, the width dimension W125 of the circumferential magnet section 125, the distance D34 between the circumferential magnet section 123 and the circumferential magnet section 124, and the distance D45 between the circumferential magnet section 124 and the circumferential magnet section 125. W121; 4mm W122; 16mm W123; 6mm W124; 6mm W125;6mm D34; 16mm D45; 21mm Height dimensions of the central magnet section 121 and the peripheral magnet section 122: 38 mm Height dimension of the circumferential magnet section 123-125: 20 mm These values ​​are just one example of a magnetic circuit capable of forming a zero-perpendicular-magnetic-field region as described above, and the present invention is not limited to these values.

[0105] Furthermore, in this embodiment, it is possible to achieve the effect of dispersing the emission of sputtered particles even with a magnet arrangement different from that of the first embodiment.

[0106] A second embodiment of the sputtering apparatus according to the present invention will be described below with reference to the drawings.

[0107] Figure 12 is a schematic diagram showing the magnetic circuit in the sputtering apparatus in this embodiment. Figure 13 is a cross-sectional view taken along line XIII-XIII in Figure 12. In this embodiment, the difference from the first embodiment described above is in the magnetic circuit; other components corresponding to the first embodiment described above are denoted by the same reference numerals and their descriptions are omitted.

[0108] As shown in Figures 12 and 13, the magnetic circuit 220 in this embodiment includes a central magnet section 221, a peripheral magnet section 222, a circumferential magnet section 223, and a circumferential magnet section 225. The central magnet section 221 corresponds to the central magnet section 121. The peripheral magnet section 222 corresponds to the peripheral magnet section 122. The circumferential magnet section 223 corresponds to the circumferential magnet sections 123 and 124. The circumferential magnet section 225 corresponds to the circumferential magnet sections 124 and 125.

[0109] The central magnet section 221, like the central magnet section 121, is arranged in a straight line extending in the Y direction within the central region (parallel region) S1 of the yoke 110. The central magnet section 121 is linearly continuous with the central region S1 in the Y direction. The central magnet section 221 has enlarged ends 221a at both ends, which are enlarged in the X direction. The central magnet section 221 has a south pole at its Z-direction tip facing the target 140. The enlarged ends 221a are located in the end region S2, which is outside the central region S1 in the Y direction. The Z-direction tip of the enlarged ends 221a has the same magnetic pole as the linear central magnet section 121. The Z-direction tip of the enlarged ends 221a has a south pole.

[0110] The peripheral magnet portion 222 is positioned on the surface of the yoke 110 so as to surround the central magnet portion 221. The peripheral magnet portion 222 has a rectangular outer contour that follows the contour of the yoke 110 when viewed in the Z direction. The peripheral magnet portion 222 has a continuous contour that follows the contour of the yoke 110 when viewed in the Z direction in the central region S1. The peripheral magnet portion 222 has a continuous contour that is intermittently along the contour of the yoke 110 when viewed in the Z direction in the end region S2. The peripheral magnet portion 222 has a different magnetic pole at its Z-direction tip facing the target 140 than the central magnet portion 221. The peripheral magnet portion 222 has a north pole at its Z-direction tip.

[0111] The peripheral magnet portion 222 has a larger width dimension in the X direction than the central magnet portion 221 in the central region S1. The peripheral magnet portion 222 may have the same width dimension in the X direction along the entire length of the central region S1. The peripheral magnet portion 222 may have different width dimensions in the central region S1 and the end region S2.

[0112] The circumferential magnet sections 223 and 225 are positioned on the surface of the yoke 110 between the central magnet section 221 and the peripheral magnet section 222. Both the circumferential magnet sections 223 and 225 are arranged to orbit the central magnet section 221 when viewed in the Z direction. Both the circumferential magnet sections 223 and 225 have an arrangement that continuously orbits the central magnet section 221 in the central region S1 when viewed in the Z direction.

[0113] The circumferential magnet sections 223 and 225 are arranged in a double circle between the central magnet section 221 and the peripheral magnet section 222. Both the circumferential magnet sections 223 and 225 have a smaller width dimension than the central magnet section 221. Both the circumferential magnet sections 223 and 225 have a smaller width dimension than the peripheral magnet section 122. The circumferential magnet sections 223 and 225 have a double-circumferential inner circumferential magnet section (first circumferential magnet section) 223 and an outer circumferential magnet section (second circumferential magnet section) 225, which are located between the central magnet section 221 and the peripheral magnet section 222. Both the inner circumferential magnet section 223 and the outer circumferential magnet section 225 have the same width dimension in the X direction.

[0114] The inner circumferential magnet section 223, like the middle circumferential magnet section 124, is positioned in the central region S1, spaced apart in the X direction from the central magnet section 221 and the outer circumferential magnet section 225. The inner circumferential magnet section 223 is parallel to the central magnet section 221 and the peripheral magnet section 222 in the central region S1. The inner circumferential magnet section 223 is positioned in the Y direction, spaced apart from the central magnet section 221 and the outer circumferential magnet section 225 in the end region S2. The inner circumferential magnet section 223 is parallel to the peripheral magnet section 222 in the end region S2. The inner circumferential magnet section 223 is positioned along the inner circumference of the peripheral magnet section 222 when viewed in the Z direction.

[0115] The inner circumferential magnet section 223 has approximately the same width dimension in the X direction as the entire length of the central region S1. Except for the corners, the inner circumferential magnet section 223 has a width dimension in the Y direction that is smaller than the width dimension in the X direction of the central region S1 in the end region S2. The inner circumferential magnet section 223 has the same magnetic pole at its Z-direction tip as the peripheral magnet section 222. The inner circumferential magnet section 223 has a different magnetic pole at its Z-direction tip than the central magnet section 221. The inner circumferential magnet section 223 has an N pole at its Z-direction tip.

[0116] The outer circumference magnet section 225 is arranged along the entire inner circumference of the peripheral magnet section 222 when viewed in the Z direction, similar to the middle circumference magnet section 124. The outer circumference magnet section 225 is positioned spaced apart from the inner circumference magnet section 223 in the central region S1. The outer circumference magnet section 225 is spaced apart from the inner circumference magnet section 223 and the peripheral magnet section 222 when viewed in the Z direction in the central region S1. The outer circumference magnet section 225 is spaced apart from the inner circumference magnet section 223 and the peripheral magnet section 222 when viewed in the Z direction in the end region S2.

[0117] The outer circumferential magnet section 225 has the same width dimension in the X direction along the entire length of the central region S1. In the end region S2, the outer circumferential magnet section 225 has a width dimension in the Y direction that is smaller than the width dimension in the X direction of the central region S1. The outer circumferential magnet section 225 has a different magnetic pole at its Z-direction tip compared to the peripheral magnet section 222. The outer circumferential magnet section 225 has a different magnetic pole at its Z-direction tip compared to the inner circumferential magnet section 223. The outer circumferential magnet section 225 has the same magnetic pole at its Z-direction tip compared to the central magnet section 221. The outer circumferential magnet section 225 has a south pole at its Z-direction tip.

[0118] The central magnet section 221, the peripheral magnet section 222, the inner peripheral magnet section 223, and the outer peripheral magnet section 225 all have the same height in the Z direction.

[0119] The dimensional relationships in the magnetic circuit 220 in this embodiment are shown below as an example. As shown in Figure 13, the dimensions in the X direction in the central region S1 can be set to the following ratios with respect to the width dimension W221 of the central magnet section 221: the width dimension W222 of the peripheral magnet section 222, the width dimension W223 of the circumferential magnet section 223, the width dimension W225 of the circumferential magnet section 225, the distance D13 between the central magnet section 221 and the circumferential magnet section 223, the distance D35 between the circumferential magnet section 123 and the circumferential magnet section 125, the distance D52 between the circumferential magnet section 125 and the peripheral magnet section 222, and the distance D20 between the peripheral magnet section 222 and the end face of the backing plate. W221;1 W222;1.1 W223;0.9 W225;0.9 D13;1.1 D35;1.05 D52;0.6 D20;0.23 Similarly, the height dimensions of the central magnet section 221, peripheral magnet section 222, circumferential magnet section 223, and circumferential magnet section 225 are all such that, when the distance D13 between the central magnet section 221 and the circumferential magnet section 223 is set to 1.1, the ratio of D13 to this D13 is 3. It can be set to that. These values ​​represent an example of a magnetic circuit capable of forming a zero-perpendicular-magnetic-field region, and the present invention is not limited to these values.

[0120] Figure 14 shows the magnetic field profile observed in the sputtering cathode section of the sputtering apparatus of this embodiment, and illustrates the parallel magnetic field component B / / parallel to the target surface and the perpendicular magnetic field component B⊥ perpendicular to the target surface. The magnetic circuit 220 is capable of forming a magnetic field profile as shown in Figure 14. The parallel magnetic field component B / / passes through the origin M0 and, as X changes in the negative direction from point M0, reaches points M1, M3, M5, and M6. The perpendicular magnetic field component B⊥ passes through points L1, L2, L3, L4, L5, and L6 as X changes in the negative direction from point L0 where X=0. The vertical magnetic field component B⊥ reaches a vertical magnetic field peak B⊥p at point L6, which coincides with the outer edge of the peripheral magnet portion 222.

[0121] Point L0 has the same X value as point M0. Point L3 has the same X value as point M3. Point L6 is close to point M6 in the positive X direction. Point L1 is further away from point M0 in the negative X direction than point M1. Point L5 is closer to point M0 in the positive X direction than point M5.

[0122] The region from point L1 to point L5 is the zero-perpendicular magnetic field region. In the zero-perpendicular magnetic field region, the profile of the magnetic field component B⊥ has a ratio of 2 / 5 or greater to the length of the zero-perpendicular magnetic field region in the X direction, to the distance between the vertical magnetic field peaks B⊥p in the X direction. In other words, the distance from point L1 to point L5, which is the length of the zero-perpendicular magnetic field region, is 2 / 5 or greater to the distance between each of the points L6 located on either side of the origin L0 in the X direction. In other words, the distance from point L1 to point L5 is 2 / 5 or more of the distance from point L0 to point L6.

[0123] Furthermore, the intensity (absolute value) of the vertical magnetic field component B⊥ in the zero vertical magnetic field region is preferably in the range of 0mT to 5mT, or in the range of 0mT to 3mT, or in the range of 0mT to 2mT. The intensity of the vertical magnetic field peak B⊥p is preferably in the range of 20mT to 40mT. In the zero-perpendicular-magnetic-field region, the intensity of the perpendicular magnetic field component B⊥ is preferably such that the ratio B⊥ / B⊥p to the intensity of the perpendicular magnetic field peak B⊥p is in the range of 0 to 1 / 5.

[0124] The sputtering apparatus 10 of this embodiment can disperse the current IP at the target surface 141 of the target 140 by forming a magnetic field profile having the aforementioned zero-vertical-magnetic-field region using the magnetic circuit 220. This makes it possible to form a sputter particle dispersion region that can disperse the emission of sputtered particles at the target surface 141 of the target 140 during sputtering. As a result, the entry of argon particles / ions / plasma at the target surface 141 of the target 140 during sputtering does not concentrate locally, but rather the number of argon particles / ions / plasma entering per unit area of ​​the target surface 141 of the target 140 is averaged over the entire target surface 141, resulting in a distribution state close to that of a uniformly spread distribution.

[0125] These measures suppress damage to the underlying organic film caused by sputtered particles throughout the entire film deposition process, thereby improving the yield in OLED manufacturing. This improved yield makes it possible to manufacture OLEDs using sputtering, which was previously not feasible. Consequently, the amount of silver used in the manufacturing of OLED cathode electrodes can be reduced.

[0126] In this embodiment, the same effects as those of the above-described embodiment can be achieved. Furthermore, in this embodiment, since the cathode electrodes can be formed by relatively moving the sputtering cathode pair portion 100p while the substrate Sub is stationary, uniformity of the cathode electrode layer can be ensured across the entire surface of the substrate Sub. In addition, the drive mechanism in the mechanism supporting the substrate Sub is minimized, which suppresses the generation of particles from the drive source and improves the yield of the product.

[0127] A third embodiment of the sputtering apparatus according to the present invention will be described below with reference to the drawings.

[0128] Figure 15 is a schematic diagram showing the sputtering apparatus in this embodiment. This embodiment differs from the first and second embodiments described above in respect to the relative movement part. Other corresponding components are denoted by the same reference numerals, and their descriptions are omitted. Note that in Figure 15, there are components, such as the film deposition chamber 11, that are not described.

[0129] In this embodiment, as shown in Figure 15, the relative movement unit 13 moves the sputtering pair unit 100p in the X direction. The substrate Sub does not move in the X direction.

[0130] The relative movement unit 13 maintains the distance in the X direction between the two sputtering cathode units 100 in the sputtering pair unit 100p, that is, the sputtering cathode pitch pc. The sputtering cathode pitch pc is set within the range of 200 mm to 500 mm. The ratio of the sputtering cathode pitch pc to the X-direction dimension (width dimension) of target 140 is set within the range of 0.2 to 0.99.

[0131] In this embodiment, the same effects as those of the above-described embodiment can be achieved. Furthermore, in this embodiment, since the cathode electrode can be formed by relatively moving the substrate Sub while the sputtering cathode pair 100p is stationary, uniformity of the cathode electrode layer can be ensured across the entire substrate Sub, similar to the embodiment described above. In addition, by using multiple sputtering cathode pairs p, the cathode electrode can be formed at high speed, thus improving productivity.

[0132] A fourth embodiment of the sputtering apparatus according to the present invention will be described below with reference to the drawings.

[0133] Figure 16 is a schematic diagram showing the sputtering apparatus in this embodiment. This embodiment differs from the first and second embodiments described above in respect to the sputtering pair section. Other corresponding components are denoted by the same reference numerals, and their descriptions are omitted. Note that in Figure 16, there are components, such as the film deposition chamber 11, that are not described.

[0134] In this embodiment, as shown in Figure 15, the relative movement unit 13 moves the substrate Sub in the X direction. The sputtering pair unit 100p does not move in the X direction.

[0135] In this embodiment, two sets of sputtering pair sections 100p are illustrated. The two sets of sputtering pair sections 100p are aligned in the X direction. The spacing between adjacent sputtering pair sections 100p is arranged such that the distance between adjacent sputtering cathode sections 100 is equal to the sputtering cathode pitch pc.

[0136] In this embodiment, the same effects as those of the above-described embodiment can be achieved. Furthermore, in this embodiment, by using a single-wafer apparatus, it becomes possible to process multiple types of films on the substrate Sub. In addition, by preparing deposition chambers for the same film type in the single-wafer apparatus, even if one deposition chamber becomes unusable due to maintenance or trouble, production can be carried out using the other deposition chambers, thus reducing downtime and improving the operating rate of the apparatus. Moreover, since the substrate Sub is transported by a robot, a transport support mechanism is unnecessary, which suppresses the generation of particles from the transport support mechanism and improves the yield of the product.

[0137] A fifth embodiment of the sputtering apparatus according to the present invention will be described below with reference to the drawings.

[0138] Figure 17 is a schematic plan view showing the sputtering apparatus in this embodiment. The difference in this embodiment from the embodiments described above lies in the arrangement of the film deposition chamber. Other corresponding components are denoted by the same reference numerals and their descriptions are omitted. Note that some components in Figure 17 are not shown.

[0139] The sputtering apparatus 1 in this embodiment is used to manufacture OLED devices by depositing films on a glass substrate (substrate) Sub. As shown in Figure 17, the sputtering apparatus (substrate processing apparatus) 1 comprises a load chamber 2, an unload chamber 2A, a transfer chamber (transport chamber) 3, a film deposition chamber 11, a film deposition chamber 11A, a film deposition chamber 11B, and a film deposition chamber 11C. The sputtering apparatus 1 has a control device (not shown).

[0140] The load chamber 2, unload chamber 2A, deposition chamber 11, deposition chamber 11A, deposition chamber 11B, and deposition chamber 11C are arranged to surround the transfer chamber 3. The control unit controls the operation of the load chamber 2, unload chamber 2A, deposition chamber 11, deposition chamber 11A, deposition chamber 11B, deposition chamber 11C, and transfer chamber 3.

[0141] <Load / Unload Chamber> Load chamber 2 loads the glass substrate Sub into the sputtering apparatus 1 from the outside. Unload chamber 2A unloads the glass substrate Sub from the inside of the sputtering apparatus 1 to the outside. Load chamber 2 and unload chamber 2A can also switch between loading and unloading the glass substrate Sub. Load chamber 2 and unload chamber 2A can also be combined into a single load / unload chamber. The load chamber 2 and the unload chamber 2A are connected by a rough-vacuum exhaust section that reduces the internal space (rough vacuuming). The rough-vacuum exhaust section is, for example, a rotary pump. The load chamber 2 and the unload chamber 2A have door valves that can be opened and closed to the outside. A gate valve is located between the load chamber 2 and the transfer chamber 3. A gate valve is located between the unload chamber 2A and the transfer chamber 3.

[0142] <Transfer Chamber> The transfer chamber 3 includes a transport device 3a located inside the transfer chamber 3. The transport device 3a is, for example, a transport robot. The conveying device 3a includes a rotating shaft, a drive source for rotating the rotating shaft, a robot arm attached to the rotating shaft, a robot hand formed on a part of the robot arm, and a vertical movement mechanism. The robot arm includes a first and second moving rail that intersect each other, a first base that can move along the second moving rail relative to the first moving rail, and a second base that can move the robot hand relative to the second moving rail. The conveying device 3a can move the glass substrate Sub, which is the object to be conveyed, between each of the chambers 2, 2A, 3, 11, 11A to 11C. The robot arm may be composed of a first active arm, a second active arm, a first driven arm, and a second driven arm, all of which are bendable relative to each other.

[0143] <Film deposition chamber> The deposition chambers 11, 11A-11C are chambers that perform film deposition on the substrate Sub. The deposition chambers 11, 11A-11C may have the same configuration. The deposition chambers 11, 11A-11C may have different configurations. In the deposition chambers 11A, 11B, and 11C, the same deposition process may be performed, or different deposition processes may be performed in each chamber.

[0144] The deposition chambers 11A to 11C each include a deposition atmosphere setting mechanism and a deposition source supply unit. The deposition atmosphere setting mechanism and the deposition source supply unit are used to perform substrate processing, such as deposition, on the glass substrate Sub. The deposition atmosphere setting mechanism and the deposition source supply unit are examples of substrate processing units. The substrate processing unit may also be called a substrate processing mechanism or a deposition source.

[0145] The film deposition atmosphere setting mechanism includes a gas introduction section for introducing a processing gas into the film deposition chambers 11A to 11C, and a high-vacuum exhaust section for reducing the internal space of the chambers 11A to 11C (creating a high vacuum). The gas introduction section is connected to a gas supply source. The gas introduction section is, for example, a mass flow controller that adjusts the flow rate of the gas supplied from the gas supply source. The high-vacuum exhaust section is, for example, a turbomolecular pump.

[0146] The deposition chambers 11A to 11C can perform deposition processes other than the deposition of the cathode electrode layer Ctd. The deposition chambers 11A to 11C can have a configuration that can accommodate the formation of the anode electrode layer And by sputtering deposition on a substrate Sub that does not have an underlying organic film formed thereon. In this case, the deposition source supply unit is a sputtering source. Alternatively, the film deposition chambers 11A to 11C can have configurations that can accommodate the formation of each layer of the underlying organic film by vapor deposition. In this case, the film deposition source supply unit is the vapor deposition source. Alternatively, a substrate Sub with an anode electrode layer And and an underlying organic film already formed on it may be introduced into the film deposition chamber 11.

[0147] A partition valve is positioned between the deposition chamber 11A and the transfer chamber 3. A partition valve is positioned between the deposition chamber 11B and the transfer chamber 3. A partition valve is positioned between the deposition chamber 11C and the transfer chamber 3.

[0148] The deposition chamber 11 corresponds to the deposition chamber 11 of the embodiment described above. The deposition chamber 11 forms a silver cathode electrode layer Ctd on a substrate Sub on which an underlying organic film has been formed by sputtering deposition. The deposition chamber 11 consists of a plasma chamber 11m and a platen chamber 11n. The plasma chamber 11m performs sputtering deposition on the glass substrate Sub. The platen chamber 11n supports the glass substrate Sub during the deposition process in the plasma chamber 11m.

[0149] The platen chamber 11n is adjacent to the plasma chamber 11m. The platen chamber 11n has a transport port 11a. The transport port 11a is an opening through which the glass substrate Sub passes when transporting the glass substrate Sub. The platen chamber 11n is connected to the transfer chamber 3 via the transport port 11a. A partition valve is located at the transport port 11a. By opening and closing the partition valve, communication between the platen chamber 11n and the transfer chamber 3, and isolation of the platen chamber 11n from the transfer chamber 3 can be switched. The platen chamber 11n has an opening 42 that opens into the plasma chamber 11m. In the platen chamber 11n, the opening 42 is closer to the plasma chamber 11m than the mask Ms, which will be described later.

[0150] The plasma chamber 11m has a sputtering pair section 100p inside. The sputtering pair section 100p is erected inside the deposition chamber 11 at the position furthest from the transport port 11a. The plasma chamber 11m has an opening 40 that opens into the platen chamber 11n. The openings 40 and 42 are connected to each other. This assembles the plasma chamber 11m and the platen chamber 11n, forming the film deposition chamber 11. The openings 40 and 42 communicate with each other. This creates an internal space 44 between the plasma chamber 11m and the platen chamber 11n. The internal space 44 is sealed by the assembly of the plasma chamber 11m and the platen chamber 11n.

[0151] In the plasma chamber 11m, the target 140 of the sputtering cathode section 100 faces the mask Ms, which will be described later. In the plasma chamber 11m, the target 140 and the backing plate 130 protrude from the opening 40 toward the platen chamber 11n. The target 140 and the backing plate 130 are not located inside the plasma chamber 11m. The target 140 and the backing plate 130 face toward the transport port 11a.

[0152] The internal space 44 of the film deposition chamber 11 has a front space 45 and a back space 46. The front space 45 is the space where plasma is generated during film deposition. The front space 45 is the space facing the surface where the film deposition surface of the glass substrate Sub is exposed during film deposition. The front space 45 is formed by the combination of the internal space of the plasma chamber 11m and the internal space of the platen chamber 11n. The front space 45 is formed near the openings 42 and 40.

[0153] The back space 46 is the main internal space of the platen chamber 11n. The back space 46 is the space facing the back surface of the glass substrate Sub during film deposition. The back space 46 is responsible for transporting the substrate Sub immediately before and after film deposition. The front space 45 and the back space 46 form an internal space 44 in the sealed film deposition chamber 11.

[0154] In Figure 17, the position indicated by reference numeral 11b is the boundary position between the front space 45 and the back space 46 in the deposition chamber 11. A mask Ms is placed near the boundary position 11b. In the deposition chamber 11, a backing plate 130 with a target 140 fixed to it is placed in the front space 45. The deposition chamber 11 has a rotational support mechanism positioned in the back space 46. The rotational support mechanism supports the glass substrate Sub that has been fed in from the transport port 11a and rotates the glass substrate Sub around a horizontal axis near the boundary position 11b. The rotational support mechanism supports the glass substrate Sub during deposition. The rotational support mechanism can be called a platen mechanism. The platen mechanism constitutes a relative movement section 13 or a substrate support section 13a.

[0155] The rotational support mechanism allows the glass substrate Sub to be rotated between a horizontal transport position and a film-forming upright position while supporting the glass substrate Sub. The rotational support mechanism comprises a substrate holding section and a rotation axis. The substrate holder is capable of supporting the back surface of the glass substrate Sub within the platen chamber 11n. The substrate holder is, for example, a platen. When the substrate holder is in the horizontal transport position, its shape is approximately rectangular in plan view. The substrate holder is attached to the rotating shaft.

[0156] The rotation axis is rotatable about a center of rotation along the horizontal direction. The rotation axis is approximately parallel to the conveying port 11a. When the substrate holder holding the glass substrate Sub is in the film deposition upright position, the substrate holder supports the glass substrate Sub so that it faces the mask Ms. In this state, the rotation support mechanism holds (supports) the glass substrate Sub so that it faces the target 140 during film deposition, and the film deposition process is performed on the glass substrate Sub.

[0157] The mask Ms is located inside the platen chamber 11n. Inside the platen chamber 11n, the mask Ms is positioned opposite the glass substrate Sub, which is in the deposition-upright position of the plasma chamber 11m. The mask Ms is erected so as to face the plasma chamber 11m. The mask Ms comprises a roughly rectangular mask frame and a plurality of ribs stretched across the mask frame so as to extend in the vertical and horizontal directions. The plurality of ribs define the inner region of the mask frame. The mask frame is made of a rigid metal such as SUS. The ribs are made of metal foil such as Invar. The ribs are fixed to the mask frame with both ends pulled taut by the mask frame. Inside the mask frame, the region surrounded by multiple ribs stretched in the vertical and horizontal directions is the film deposition region.

[0158] In the sputtering apparatus 1 of this embodiment, the door valve is opened and the glass substrate Sub is loaded into the load chamber 2. After closing the door valve, the glass substrate Sub is loaded from the load chamber 2 to the transfer chamber 3 by the transport device 3a via the opened partition valve. After closing the partition valve of the load chamber 2, the glass substrate Sub is loaded from the transfer chamber 3 to the deposition chamber 11A by the transport device 3a via the opened partition valve. In the deposition chamber 11A with the partition valve closed, for example, the anode electrode layer And is deposited. Note that when the anode electrode layer And is deposited by sputtering, a mask is not used, unlike when the cathode electrode layer Ctd is deposited by sputtering.

[0159] Once the deposition of the anode electrode layer And is complete, the glass substrate Sub is transferred from the deposition chamber 11A to the deposition chamber 11B via the transfer chamber 3 by the transport device 3a. In the deposition chamber 11B, with the partition valve closed, for example, a base organic film is deposited. Furthermore, the glass substrate Sub can be moved from the deposition chamber 11B. If necessary, the glass substrate Sub can be moved between different deposition chambers. Furthermore, if necessary, the glass substrate Sub can be moved to another deposition apparatus.

[0160] The substrate Sub, on which the underlying organic film is formed, is transported by the transport device 3a to the deposition chamber 11 via the transfer chamber 3. In the deposition chamber 11, the horizontally transported glass substrate Sub is rotated from the horizontal transport position to the deposition upright position by a rotation support mechanism. In this state, a silver cathode electrode layer Ctd is deposited in the deposition chamber 11 by sputtering, similar to the embodiment described above.

[0161] The substrate Sub, on which the silver cathode electrode layer Ctd is formed, is rotated from the film-forming upright position to the horizontal transport position by a rotation support mechanism. The substrate Sub, on which the silver cathode electrode layer Ctd is formed, is then transported out of the unload chamber 2A via the transfer chamber 3 by the transport device 3a. Note that the operation of the partition valve and door valve has been omitted in some sections. After this, the necessary processing is carried out to complete the manufacturing of the OLED device.

[0162] In this embodiment, the same effects as those of the above-described embodiment can be achieved. Furthermore, in this embodiment, by using an inter-back sputtering apparatus, it becomes possible to process multiple types of films on the substrate Sub. By continuously feeding in the substrate Sub, the sputtering pair p can be kept constantly discharged, contributing to production. This allows for high-speed formation of cathode electrodes, resulting in improved productivity.

[0163] A sixth embodiment of the sputtering apparatus according to the present invention will be described below with reference to the drawings.

[0164] Figure 18 is a schematic diagram showing the sputtering apparatus in this embodiment. This embodiment differs from the fifth embodiment described above in terms of the arrangement of the film deposition chamber. Other corresponding components are denoted by the same reference numerals and their descriptions are omitted. Note that some components in Figure 18 are not described.

[0165] The sputtering apparatus 1A in this embodiment is used to deposit a film on a glass substrate (substrate) Sub for the manufacture of OLED devices. The sputtering apparatus 1A may be a vertical processing apparatus that transports the glass substrate Sub in an upright position. The sputtering apparatus 1A may be a horizontal processing apparatus that transports the glass substrate Sub in a horizontal position.

[0166] The sputtering apparatus 1A is a through-type interback sputtering apparatus. As shown in Figure 18, the sputtering apparatus 1A comprises a load chamber 2, an unload chamber 2A, a deposition chamber 11, a deposition chamber (vacuum processing chamber) 11A, a deposition chamber (vacuum processing chamber) 11B, and a deposition chamber (vacuum processing chamber) 11C. The sputtering apparatus 1A has a control device (not shown).

[0167] The load chamber 2 has a transport mechanism 2a and an exhaust mechanism 2f. The transport mechanism 2a transports the glass substrate Sub, which is brought in from the outside, toward the film deposition chamber 11A. The exhaust mechanism 2f creates a rough vacuum inside the load chamber 2. The exhaust mechanism 2 is a rotary pump or the like. The load chamber 2 is connected to the film deposition chamber 11A via a sealing mechanism v1 such as a door valve.

[0168] The unloading chamber 2A includes a transport mechanism 2A and an exhaust mechanism 2Af. The transport mechanism 2Aa transports the glass substrate Sub, which has completed film deposition, from the film deposition chamber 11 to the outside. The exhaust mechanism 2Af roughly evacuates the inside of the unloading chamber 2A. The exhaust mechanism 2Af is a rotary pump or the like. The unloading chamber 2A is connected to the film deposition chamber 11 via a sealing mechanism v5.

[0169] The deposition chambers 11A to 11C can perform deposition processes other than the cathode electrode layer Ctd, similar to the fifth embodiment. The deposition chambers 11, 11A to 11C may have the same configuration. The deposition chambers 11, 11A to 11C may have different configurations. In the deposition chambers 11A, 11B, and 11C, the same deposition process may be performed, or different deposition processes may be performed in each chamber.

[0170] The deposition chamber 11A includes a substrate holding mechanism (relative movement part) 13A, a deposition mechanism 11As, and an atmosphere control unit 12A. The deposition chamber 11A is connected to the deposition chamber 11B via a sealing mechanism v3. The substrate holding mechanism 13A receives the glass substrate Sub that has been transported by the transport mechanism 2a. The substrate holding mechanism 13A supports the glass substrate Sub inside the deposition chamber 11A. The substrate holding mechanism 13A holds the glass substrate Sub so that it faces the deposition source mechanism 11As during deposition. The substrate holding mechanism 13A moves the glass substrate Sub relative to the deposition mechanism 11As. The substrate holding mechanism 13A transports the glass substrate Sub inside the deposition chamber 11A. The substrate holding mechanism 13A hands over the glass substrate Sub to the transport mechanism 13B.

[0171] The film deposition mechanism 11As is a film deposition source. The film deposition chamber 11A can have a configuration that allows for the formation of an anode electrode layer And by sputtering onto a substrate Sub that does not have an underlying organic film formed on it. In this case, the film deposition mechanism (film deposition source supply unit) 11As is a sputtering source. The atmosphere control unit 12A includes a gas introduction unit for introducing an atmospheric gas into the deposition chamber 11A and a high-vacuum exhaust unit for reducing the internal space of the deposition chamber 11A (creating a high vacuum). The gas introduction unit is connected to a gas supply source. The gas introduction unit is, for example, a mass flow controller that adjusts the flow rate of the gas supplied from the gas supply source. The high-vacuum exhaust unit is, for example, a turbomolecular pump.

[0172] The deposition chamber 11B includes a substrate holding mechanism (relative movement part) 13B, deposition mechanisms 11Bs, and an atmosphere control unit 12B. The deposition chamber 11B is connected to the deposition chamber 11C via a sealing mechanism v3. The substrate holding mechanism 13B and the atmosphere control unit 12B correspond to the substrate holding mechanism 13A and the atmosphere control unit 12A. The film deposition mechanism 11Bs is a film deposition source. The film deposition chamber 11B can have a configuration that can accommodate the formation of each layer of the underlying organic film by vapor deposition. In this case, the film deposition mechanism (film deposition source supply unit) 11Bs is a vapor deposition source.

[0173] In the deposition chamber 11C, the deposition process may be carried out in the same manner as in the deposition chamber 11B. In this case, the deposition chamber 11C has deposition mechanisms 11Cs, a substrate holding mechanism (relative movement part) 13C, and an atmosphere control unit 12C, which correspond to deposition mechanisms 11Bs, substrate holding mechanism 13B, and atmosphere control unit 12B. The deposition chamber 11C is connected to the deposition chamber 11 via a sealing mechanism v4.

[0174] The deposition chamber 11 corresponds to the deposition chamber 11 of the embodiment described above. The deposition chamber 11 forms a silver cathode electrode layer Ctd on a glass substrate Sub on which an underlying organic film has been formed by sputtering deposition. The film deposition chamber 11 has a sputtering pair section 100p. The relative movement section 13 receives the substrate Sub, on which the underlying organic film has been formed, from the substrate holding mechanism 13C. The relative movement unit 13 moves the glass substrate Sub relative to the target 140. The cooling unit 13b cools the glass substrate Sub. At this time, the atmosphere control unit 12 introduces the film-forming gas intensively near the target 140. The atmosphere control unit 12 also applies a high vacuum intensively near the target 140. The power supply unit 150 applies a negative potential sputtering voltage to the backing plate 130. Furthermore, the deposition chamber 11 may have a mask attachment / detachment section if the mask Ms is attached to the glass substrate Sub before the deposition process. Alternatively, the mask Ms may be detached in the unloading chamber 2A, or the substrate Sub and mask Ms may be discharged outside the sputtering apparatus 1A before attachment / detachment.

[0175] When manufacturing an OLED device in the sputtering apparatus 1A, the glass substrate Sub is loaded into the load chamber 2 as a preparation step. The glass substrate Sub is transported from the load chamber 2 to the deposition chamber 11A by the transport mechanism 2a. The glass substrate Sub is transported inside the deposition chamber 11A by the substrate holding mechanism 13A. The glass substrate Sub is transported inside the deposition chamber 11B by the substrate holding mechanism 13B. The glass substrate Sub is transported inside the deposition chamber 11C by the substrate holding mechanism 13C. The glass substrate Sub undergoes deposition processing other than the cathode electrode layer Ctd inside the deposition chambers 11A to 11C.

[0176] Furthermore, the glass substrate Sub is transported within the deposition chamber 11 by the relative movement unit 13. Sputtering deposition of the cathode electrode layer Ctd is performed on the glass substrate Sub inside the deposition chamber 11. The glass substrate Sub, after film deposition is complete, is transported from the deposition chamber 11 to the unloading chamber 2A by the relative movement unit 13. The glass substrate Sub is then removed to the outside by the transport mechanism 2Aa. Some details of the operation of the sealing mechanisms v1 to v5 have been omitted. After this, the necessary processing is carried out to complete the manufacturing of the OLED device.

[0177] In this embodiment, the same effects as those of the above-described embodiment can be achieved. Furthermore, in this embodiment, since there is no need to return the substrate Sub compared to the interback type sputtering apparatus described above, a further improvement in productivity can be achieved.

[0178] In this embodiment, a through-type interback sputtering apparatus is used, but a carrier-circulating type inline sputtering apparatus can also be used.

[0179] Furthermore, in the present invention, it is also possible to individually select and combine each of the configurations in the above-described embodiments.

[0180] The sputtering apparatus of the present invention can perform processing on glass substrates with sides of 2500 mm or more.

Example

[0181] Hereinafter, examples according to the present invention will be described.

[0182] Here, a confirmation test to be performed as a specific example of the sputtering process by the sputtering apparatus in the present invention will be described.

[0183] <Experimental Example 1> Using the sputtering apparatus 10 shown in FIG. 2, a zero vertical magnetic field region was formed, and a silver cathode electrode film was formed by sputtering on a glass substrate Sub on which an underlying organic film was formed.

[0184] Here, the specifications in the silver sputtering film formation are shown. Substrate dimensions: 2500 mm × 2200 mm Y-direction dimension of the sputtering cathode part: 2950 mm X-direction width dimension of the sputtering cathode part: 250 mm Sputtering cathode pitch pc: 300 mm X-direction width dimension of the target: 135 mm X-direction dimension of the zero vertical magnetic field region: 70 mm Peak vertical magnetic field B⊥p: 270 G Intensity of the vertical magnetic field component B⊥ at point L3: 20 G Relative movement speed: 70 mm / s DC voltage: 500 V DC power: 5900 W Sputtering gas: Ar, gas flow rate: 130 sccm Sputtering pressure: 0.4 Pa Substrate temperature: 30°C Silver film thickness: 20 nm

[0185] <Experimental Example 2> Similarly, a zero vertical magnetic field point was formed by the sputtering apparatus 10 shown in FIG. 8, and a silver cathode electrode film was formed by sputtering on a substrate Sub on which an underlying organic film was formed. <(

[0186] In these experimental examples, the locations of damage in the underlying organic film were measured after the silver film deposition. In this study, damage was measured by measuring the drive voltage of the OLED device.

[0187] As a result, in Experimental Example 2, when a vertical magnetic field zero point was formed, the drive voltage increased significantly due to damage. In contrast, in Experimental Example 1, when a zero-vertical-magnetic-field region was formed using the sputtering apparatus 10 shown in Figure 2, there was almost no increase in the driving voltage. From these results, it can be seen that the present invention is effective in reducing damage in the manufacturing of OLEDs. [Industrial applicability]

[0188] Examples of applications of the present invention include its potential effectiveness for devices and objects where damage to the underlying film is a concern, such as perovskite solar cells, perovskite LEDs, QD displays, and surface treatment of pharmaceuticals and drugs. [Explanation of Symbols]

[0189] 1,1A,10…Sputtering equipment 11…Deposition chamber 12...Atmosphere Control Unit 13…Relative movement part 13a...Board support part 13b…Cooling section 100...Sputtering cathode section 100p...Sputtering pair section 110... York 120,220… Magnetic Circuit 121,221…Central magnet section 122,222… Peripheral magnet section 123,223... Inner circumference magnetic section (circular magnetic section) 124...Mid-circuit magnet section (circuit magnet section) 125,225... Outer circumference magnet section (circular magnet section) 130...Backing plate 140...Target 150…Power supply section 160... Cathode rotation mechanism B / / …Parallel magnetic field component B⊥…Vertical magnetic field component Ms... Mask Sub... Glass substrate (substrate)

Claims

1. An apparatus for forming a silver layer on the surface of an underlying organic film formed on a substrate by sputtering via a mask, A film deposition chamber and A sputtering cathode section that emits silver sputtered particles toward the substrate within the film deposition chamber, A relative movement unit that moves the sputtering cathode unit and the substrate relative to each other in a relative movement direction along the surface, An atmosphere control unit that creates a sputtering atmosphere inside the film deposition chamber, Equipped with, The sputtering cathode section is A flat yoke and A magnetic circuit provided on the surface of the yoke, A backing plate is arranged on top of the magnetic circuit, and the relative direction of movement is in the width direction, A flat plate target made of silver is provided on the backing plate, A power supply unit that supplies sputtering power to the backing plate, Equipped with, The magnetic circuit is capable of forming a magnetic field profile having a sputter particle dispersion region that can disperse the emission of sputter particles along the target surface of the target. A sputtering apparatus characterized by the following features.

2. The magnetic circuit forms the sputtered particle dispersion region by a magnetic field profile that forms a zero-vertical-magnetic-field region where the vertical magnetic field component B⊥ in the direction perpendicular to the plane parallel to the target is near zero. The sputtering apparatus according to claim 1, characterized in that it is a sputtering apparatus.

3. The aforementioned magnetic circuit is The profile of the vertical magnetic field component B⊥ is symmetrical in the width direction, and the profile of the vertical magnetic field component B⊥ has vertical magnetic field peaks B⊥p near both ends of the target in the width direction. The profile of the vertical magnetic field component B⊥ makes the ratio of the length of the vertical magnetic field zero region in the width direction to the distance between the vertical magnetic field peaks B⊥p in the width direction to 2 / 5 or more. The sputtering apparatus according to claim 2, characterized in that it is as described above.

4. In the region of zero vertical magnetic field, the intensity of the vertical magnetic field component B⊥ is such that the ratio B⊥ / B⊥p to the intensity of the vertical magnetic field peak B⊥p is in the range of 0 to 1 / 5. The sputtering apparatus according to claim 3, characterized in that it is a sputtering apparatus.

5. Multiple sputtering cathode sections are arranged in a line in the relative movement direction, A sputtering pair is configured in which the sputtering cathodes are arranged side by side such that two adjacent target surfaces are aligned in the relative movement direction and located on the same plane. The sputtering pair is such that the two sputtering cathodes are both rotatable around axes parallel to each other in a direction intersecting the relative movement direction. The device includes a cathode rotation mechanism that allows the two target surfaces to rotate and tilt around their respective axes from a state where they are aligned on the same plane to a state where they face each other. The sputtering apparatus according to claim 1, characterized in that it is a sputtering apparatus.

6. The aforementioned power supply unit is a DC power source. The sputtering apparatus according to claim 1, characterized in that it is a sputtering apparatus.

7. The substrate support portion has a mechanism that supports the substrate while cooling it when the substrate is moved relative to it. The sputtering apparatus according to claim 1, characterized in that it is a sputtering apparatus.

8. The aforementioned magnetic circuit is A central magnet portion is arranged in the central region of the yoke, extending linearly in a direction intersecting the width direction, The peripheral magnet portion is arranged around the central magnet portion, A circumferential magnet portion is disposed between the central magnet portion and the peripheral magnet portion and surrounds the central magnet portion, It has, The central magnet portion, the peripheral magnet portion, and the peripheral magnet portion have parallel regions that are arranged parallel to each other in the width direction. The sputtering apparatus according to claim 1, characterized in that it is a sputtering apparatus.

9. Multiple of the aforementioned circumferential magnet portions are arranged between the central magnet portion and the peripheral magnet portion. The sputtering apparatus according to claim 8, characterized in that it is as described above.

10. The target is formed of a silver alloy. The sputtering apparatus according to claim 1, characterized in that it is a sputtering apparatus.

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