Light-emitting devices

Abstract

To provide a novel light-emitting device that offers superior convenience, usefulness, or reliability. [Solution] The present invention provides a light-emitting device having an anode sandwiched between an EL layer on the cathode, the EL layer comprising at least a light-emitting layer and an oxidation-resistant layer on the light-emitting layer, the EL layer having sides, and a block layer in contact with the top surface and sides of the EL layer, the cathode in contact with the sides of the EL layer via the block layer, and the block layer comprising a heterocyclic compound. In the light-emitting device of the above configuration, the oxidation-resistant layer may comprise one or more selected from oxides of metals belonging to groups 4 to 8 of the periodic table and organic compounds having electron-withdrawing groups.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a light-emitting device, a light-emitting apparatus, an electronic device, and a lighting apparatus.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. The technical field of one aspect of the invention disclosed herein relates to a product, method, or method of manufacture. Alternatively, one aspect of the present invention relates to a process, machine, manufacture, or composition of matter. More specifically, examples of the technical field of one aspect of the present invention disclosed herein include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, methods for driving them, or methods for manufacturing them. [Background technology]

[0003] A method for manufacturing an organic EL display that enables the formation of an emissive layer without using a fine metal mask is known. One example of such a method includes the steps of: depositing a first luminescent organic material containing a mixture of a host material and a dopant material on top of an electrode array including first and second pixel electrodes formed on top of an insulating substrate to form a first emissive layer as a continuous film extending over a display area including the electrode array; irradiating the portion of the first emissive layer located above the second pixel electrode with ultraviolet light without irradiating the portion of the first emissive layer located above the first pixel electrode with ultraviolet light; depositing a second luminescent organic material containing a mixture of a host material and a dopant material and different from the first luminescent organic material on top of the first emissive layer to form a second emissive layer as a continuous film extending over a display area; and forming a counter electrode on top of the second emissive layer (Patent Document 1). [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2012-160473 [Overview of the project] [Problems that the invention aims to solve]

[0005] One aspect of the present invention aims to provide a novel light-emitting device that is superior in convenience, usefulness, or reliability. Another aspect of the present invention aims to provide a novel light-emitting apparatus that is superior in convenience, usefulness, or reliability. Another aspect of the present invention aims to provide a novel electronic device that is superior in convenience, usefulness, or reliability. Another aspect of the present invention aims to provide a novel lighting apparatus that is superior in convenience, usefulness, or reliability.

[0006] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0007] One aspect of the present invention is a light-emitting device having an anode sandwiched between an EL layer on a cathode, wherein the EL layer comprises at least a light-emitting layer and an oxidation-resistant layer on the light-emitting layer, the EL layer has sides, and a block layer is in contact with the top surface and sides of the EL layer, the cathode is in contact with the sides of the EL layer via the block layer, and the block layer comprises a heterocyclic compound.

[0008] This allows for protection of the EL layer. For example, even if the EL layer is exposed to the atmosphere during the manufacturing process of the light-emitting device, the oxidation-resistant layer can suppress oxidation of the EL layer. Furthermore, the blocking layer can protect the sides (or edges) of the EL layer. In addition, even in a configuration where the second electrode is in contact with the side (or edge) of the EL layer, the presence of the blocking layer can prevent electrical conductivity between the first and second electrodes, thus allowing for the application of various structures to the light-emitting device.

[0009] In the light-emitting device with the above configuration, the oxidation-resistant layer may include one or more selected from oxides of metals belonging to groups 4 to 8 of the periodic table and organic compounds having electron-withdrawing groups.

[0010] Furthermore, in the light-emitting devices of each of the above configurations, the oxidation-resistant layer may include one or more selected from molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, rhenium oxide, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexazatriphenylene, 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane, and 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile.

[0011] Furthermore, in the light-emitting devices of the above configurations, the block layer comprises a first block layer and a second block layer on the first block layer, and the second block layer may contain a metal.

[0012] Furthermore, in the light-emitting devices of the above configurations, the first block layer has a third block layer in contact with the EL layer, and the third block layer may contain a metal.

[0013] By forming a block layer on the light-emitting device having each of the above-described configurations, it is possible to protect the side surfaces (or ends) of each EL layer, and it is also possible to prevent a short circuit between the electrodes formed on each EL layer and a part of each EL layer. Further, the second block layer can improve the electron injection property from the anode to the EL layer, while the first block layer can be a layer that can also prevent conduction between the anode and the EL layer at the side surface (also referred to as the end) of the EL layer.

[0014] Moreover, one aspect of the present invention is a light-emitting device including the light-emitting device having each of the above-described configurations, a transistor, or a substrate.

[0015] Also, one aspect of the present invention is a light-emitting device including an adjacent first light-emitting device and a second light-emitting device. The first light-emitting device has an anode sandwiching a first EL layer on a first cathode, and the first EL layer has at least a first light-emitting layer and a first oxidation-resistant layer on the first light-emitting layer. The second light-emitting device has an anode sandwiching a second EL layer on a second cathode, and the second EL layer has at least a second light-emitting layer and a second oxidation-resistant layer on the second light-emitting layer. The light-emitting device has a block layer in contact with the upper surface and side surfaces of the first EL layer and the upper surface and side surfaces of the second EL layer. The second EL layer has a gap between the second EL layer and the first EL layer, and in the gap, the anode is provided via a block layer in contact with the side surface of the first EL layer and the side surface of the second EL layer.

[0016] In a high-definition light-emitting device (display panel) with more than 1000 ppi, when electrical conduction is recognized between a plurality of EL layers, crosstalk occurs, and the color gamut that can be displayed by the light-emitting device becomes narrow. By providing a gap in the high-definition light-emitting device, a light-emitting device capable of displaying vivid colors can be provided.

[0017]

[0018] ​Furthermore, in the light-emitting devices of the above configurations, the first oxidation-resistant layer is molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2 It may contain one or more selected from 3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane, and 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile.

[0019] In the light-emitting device of each of the above configurations, the block layer comprises a first block layer and a second block layer on the first block layer, wherein the first block layer contains an electron-transporting material, and the second block layer may contain an electron-transporting material and a metal.

[0020] In the light-emitting device of each of the above configurations, the first block layer has a third block layer in contact with the EL layer, and the third block layer may contain metal.

[0021] By forming a block layer on each of the above configurations of the light-emitting device, the sides (or edges) of each EL layer can be protected, and a short circuit can be prevented between the electrodes formed on each EL layer and a part of each EL layer. Furthermore, the second block layer can improve the electron injection from the anode to the EL layer, while the first block layer can also be used to prevent conductivity between the anode and the EL layer at the sides (or edges) of the EL layer.

[0022] Furthermore, one aspect of the present invention is an electronic device having the above-described light-emitting device, a sensor, an operation button, a speaker, or a microphone.

[0023] Furthermore, one aspect of the present invention is a lighting device having the above-described light-emitting device and a housing.

[0024] In the drawings attached to this specification, components are classified by function and shown as independent blocks in block diagrams. However, in reality, it is difficult to completely separate components by function, and a single component may be involved in multiple functions.

[0025] In this specification, the terms "source" and "drain" of a transistor are interchangeable depending on the transistor's polarity and the potential applied to each terminal. Generally, in an n-channel transistor, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the drain. Similarly, in a p-channel transistor, the terminal to which a low potential is applied is called the drain, and the terminal to which a high potential is applied is called the source. For convenience, this specification sometimes describes the connection relationships of a transistor assuming that the source and drain are fixed, but in reality, the terms "source" and "drain" are interchangeable according to the potential relationship described above.

[0026] In this specification, the source of a transistor refers to the source region, which is part of the semiconductor film that functions as the active layer, or the source electrode connected to the semiconductor film. Similarly, the drain of a transistor refers to the drain region, which is part of the semiconductor film, or the drain electrode connected to the semiconductor film. The gate refers to the gate electrode.

[0027] In this specification, a state in which transistors are connected in series means, for example, a state in which only one of the sources or drains of the first transistor is connected to only one of the sources or drains of the second transistor. A state in which transistors are connected in parallel means a state in which one of the sources or drains of the first transistor is connected to one of the sources or drains of the second transistor, and the other of the sources or drains of the first transistor is connected to the other of the sources or drains of the second transistor.

[0028] In this specification, "connection" means an electrical connection, corresponding to a state in which current, voltage, or potential can be supplied or transmitted. Therefore, a connected state does not necessarily refer to a direct connection, but also includes a state indirectly connected through circuit elements such as wiring, resistors, diodes, and transistors, so that current, voltage, or potential can be supplied or transmitted.

[0029] In this specification, even when components that appear independent in a circuit diagram are connected, in reality, a single conductive film may combine the functions of multiple components, for example, when a portion of the wiring functions as an electrode. In this specification, "connection" includes such cases where a single conductive film combines the functions of multiple components.

[0030] In this specification, one of the first or second electrodes of the transistor refers to the source electrode, and the other refers to the drain electrode. [Effects of the Invention]

[0031] According to one aspect of the present invention, a novel light-emitting device with superior convenience, usefulness, or reliability can be provided. Furthermore, according to one aspect of the present invention, a novel light-emitting apparatus with superior convenience, usefulness, or reliability can be provided. Furthermore, according to one aspect of the present invention, a novel electronic device with superior convenience, usefulness, or reliability can be provided. Furthermore, according to one aspect of the present invention, a novel lighting apparatus with superior convenience, usefulness, or reliability can be provided.

[0032] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other effects from the description in the specification, drawings, and claims. [Brief explanation of the drawing]

[0033] [Figure 1] Figures 1A to 1C illustrate the configuration of a light-emitting device according to an embodiment. [Figure 2] Figures 2A to 2E illustrate the configuration of a light-emitting device according to an embodiment. [Figure 3] Figures 3A and 3B illustrate the configuration of a light-emitting device according to an embodiment. [Figure 4] Figures 4A and 4B illustrate a method for manufacturing a light-emitting device according to an embodiment. [Figure 5] Figures 5A to 5C illustrate a method for manufacturing a light-emitting device according to an embodiment. [Figure 6] Figures 6A to 6C illustrate a method for manufacturing a light-emitting device according to an embodiment. [Figure 7] Figures 7A and 7B illustrate the manufacturing method of a light-emitting device according to an embodiment. [Figure 8] Figure 8 is a diagram illustrating a light-emitting device according to an embodiment. [Figure 9] Figures 9A and 9B illustrate the light-emitting apparatus and light-emitting device according to the embodiment. [Figure 10] Figure 10 is a diagram illustrating a light-emitting device according to an embodiment. [Figure 11] Figures 11A to 11C illustrate a method for manufacturing a light-emitting device according to an embodiment. [Figure 12] Figures 12A and 12B illustrate a method for manufacturing a light-emitting device according to an embodiment. [Figure 13] Figure 13 is a diagram illustrating a light-emitting device according to an embodiment. [Figure 14] Figures 14A and 14B illustrate a light-emitting device according to an embodiment. [Figure 15] Figures 15A and 15B illustrate a circuit diagram and a part of the structure of a light-emitting device according to an embodiment. [Figure 16] Figures 16A and 16B illustrate a light-emitting device according to an embodiment. [Figure 17] Figures 17A and 17B illustrate a light-emitting device according to an embodiment. [Figure 18] Figures 18A to 18E illustrate the electronic equipment according to an embodiment. [Figure 19] Figures 19A to 19E illustrate an electronic device according to an embodiment. [Figure 20] Figures 20A and 20B illustrate the electronic device according to the embodiment. [Figure 21] Figures 21A and 21B illustrate the electronic device according to the embodiment. [Figure 22] Figure 22 is a diagram illustrating an electronic device according to an embodiment. [Modes for carrying out the invention]

[0034] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention is not to be interpreted as being limited to the contents of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common across different drawings for the same parts or parts having similar functions, and repeated descriptions are omitted.

[0035] (Embodiment 1) In this embodiment, the configuration of a light-emitting device and a display panel according to one aspect of the present invention will be described with reference to Figures 1 and 2.

[0036] Figures 1A and 1B are cross-sectional views illustrating a light-emitting device 100 according to one embodiment of the present invention.

[0037] As shown in Figures 1A and 1B, the light-emitting device 100 includes a first electrode 101, a second electrode 102, and an EL layer 103. The EL layer 103 includes an oxidation-resistant layer 105, an electron injection / transport layer 104, and a light-emitting layer 113. The first electrode 101 has a region that overlaps with the second electrode 102, and the EL layer 103 has a region sandwiched between the first electrode 101 and the second electrode 102.

[0038] The oxidation-resistant layer 105 is located on the uppermost layer of the EL layer 103. This protects the EL layer 103. For example, even if the EL layer 103 is exposed to the atmosphere during the manufacturing process of the light-emitting device 100, the oxidation of the EL layer 103 can be suppressed by the oxidation-resistant layer 105. Furthermore, because the electron injection / transport layer 104 is located between the first electrode 101 and the light-emitting layer 113 in the EL layer 103, oxidation of the EL layer 103 can be suppressed even if the EL layer 103 is exposed to the atmosphere.

[0039] The oxidation-resistant layer 105 is formed using an oxidation-resistant material. Specifically, in this embodiment, as a material that can be used for the charge generation layer of the EL layer, a composite material in which an electron acceptor material is added to an organic compound hole-transporting material, or a laminated structure of a hole-transporting material and an electron acceptor material can be used. Furthermore, as the electron acceptor material, the material described later can be used as the organic acceptor material used in the hole injection layer in this embodiment.

[0040] Specifically, as electron-accepting materials, it is preferable to use organic compounds having electron-withdrawing groups (halogen groups or cyano groups), such as oxides or quinodimethane derivatives of metals belonging to groups 4 to 8 of the periodic table, chloranil derivatives, or hexaazatriphenylene derivatives.

[0041] More specifically, examples of oxides of metals belonging to groups 4 through 8 of the periodic table include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. By using metal oxides as electron acceptor materials, the oxidation resistance of the oxidation-resistant layer 105 can be improved. Among the above, molybdenum oxide is more preferred as a material for forming the oxidation-resistant layer 105 because it is stable in air, has low hygroscopicity, and is easy to handle.

[0042] Organic compounds having electron-withdrawing groups, such as quinodimethane derivatives, chloranil derivatives, or hexaazatriphenylene derivatives, more specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10, 11-Hexacyano-1,4,5,8,9,12-Hexaazatriphenylene (abbreviated as HAT-CN), 1,3,4,5,7,8-Hexafluorotetracyano-naphthoquinodimethane (abbreviated as F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-Octafluoro-7H-pyrene-2-ylidene)malononitrile, etc., can be used. In particular, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having multiple heteroatoms, such as HAT-CN, are more preferred as materials for forming the oxidation-resistant layer 105 because the film quality is stable with respect to heat.

[0043] By configuring the oxidation-resistant layer 105 as described above, when a voltage is applied to the light-emitting device 100, holes are injected from the oxidation-resistant layer 105 into the light-emitting layer 113, and electrons are injected into the second electrode 102.

[0044] As shown in Figure 1A, when a voltage is applied to the light-emitting device 100, the first electrode 101 functions as the cathode and the second electrode 102 functions as the anode.

[0045] Furthermore, as shown in Figure 1B, the light-emitting device 100 may have a block layer 107. The block layer 107 has a region sandwiched between the second electrode 102 and the oxidation-resistant layer 105.

[0046] Furthermore, the block layer 107 preferably has a laminated structure, for example, a laminated structure of a first block layer 107-1 and a second block layer 107-2. The first block layer 107-1 has a region that contacts the upper surface (or top) and side (or end) of the EL layer 103. The second block layer 107-2 contacts the second electrode 102. The second electrode 102 also has a region that contacts the side (or end) of the EL layer 103 via the block layer 107 (first block layer 107-1 and second block layer 107-2).

[0047] The block layer 107 can protect the side (or edge) of the EL layer 103. Furthermore, even if the second electrode 102 is in contact with the side (or edge) of the EL layer 103 as shown in Figure 1B, the presence of the block layer 107 can prevent conductivity between the second electrode 102 and the electron injection / transport layer 104. Therefore, various structures can be applied to the light-emitting device 100. For example, when arranging multiple light-emitting devices 100 in a row, a structure can be created in which the second electrodes 102 of adjacent light-emitting devices 100 are connected.

[0048] It is preferable to use an electron-transporting material as the material for forming the block layer 107. In particular, by using an electron-transporting material as the first block layer 107-1 that is in contact with the EL layer 103, and making it a layer with higher electrical resistance than the second block layer 107-2, it is possible to prevent conductivity between the second electrode 102 and the electron injection / transport layer 104.

[0049] As the electron-transporting material forming the block layer 107, it is preferable to use, for example, a heterocyclic compound. Specific examples of electron-transporting materials will be described in this embodiment.

[0050] Furthermore, the block layer 107 can function as an EL layer. However, considering the driving voltage of the light-emitting device, it is more preferable to provide an additional layer with an electron donor at the interface between the first block layer 107-1 and the EL layer 103 (for example, a third block layer 107-3) (see Figure 1C).

[0051] Furthermore, by using a material in which an electron donor is added to an electron transport material as the second block layer 107-2 in contact with the second electrode 102, and making it a layer with lower electrical resistance than the first block layer 107-1, the electron injection from the EL layer 103 to the second electrode 102 can be improved. This makes it possible to suppress the rise in the driving voltage of the light-emitting device 100. As the electron donor, alkali metals, alkaline earth metals, rare earth metals, or metals belonging to groups 2 and 13 of the periodic table and their oxides or carbonates can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, etc. are preferred. Alternatively, organic compounds such as tetrathianaphthalene may be used as electron donors.

[0052] In the block layer 107, by making the second block layer 107-2 a layer with lower electrical resistance than the first block layer 107-1, the electron injection from the EL layer 103 to the second electrode 102 can be improved. At the same time, the first block layer 107-1 can also be used to prevent conductivity between the second electrode 102 and the electron injection / transport layer 104 at the side surface (also called the edge) of the EL layer 103.

[0053] As the material for forming the electron injection / transport layer 104, the materials described in this embodiment can be used for the electron injection layer and the electron transport layer. The electron injection / transport layer 104 may be formed as a single layer or as multiple layers. The electron injection layer and the electron transport layer may also be formed separately. Furthermore, the electron injection / transport layer 104 may consist of only one of the electron injection layer or the electron transport layer.

[0054] Note that the configuration of the light-emitting device according to one embodiment of the present invention is not limited to the configuration shown in Figure 1. The basic structure of the light-emitting device will be explained using Figures 2A to 2E.

[0055] ≪Basic Structure of Light-Emitting Devices≫ The basic structure of a light-emitting device will be described. Figure 2A shows a light-emitting device having an EL layer containing a light-emitting layer between a pair of electrodes. Specifically, it has a structure in which an EL layer 103 is sandwiched between a first electrode 101 and a second electrode 102. The EL layer 103 has an oxidation-resistant layer 105.

[0056] Figure 2B also shows a light-emitting device with a stacked structure (tandem structure) having multiple (two layers in Figure 2B) EL layers (103a, 103b) between a pair of electrodes, and a charge generation layer 106 between the EL layers. A light-emitting device with a tandem structure can realize a light-emitting device that can be driven at low voltage and consumes low power. Note that the EL layer 103b has an oxidation-resistant layer 105.

[0057] The charge generation layer 106 has the function of injecting electrons into one EL layer (103a or 103b) and holes into the other EL layer (103b or 103a) when a potential difference is created between the first electrode 101 and the second electrode 102. Therefore, in Figure 2B, when a voltage is applied to the first electrode 101 such that its potential is higher than that of the second electrode 102, electrons are injected from the charge generation layer 106 into the EL layer 103a and holes are injected into the EL layer 103b.

[0058] Furthermore, from the viewpoint of light extraction efficiency, it is preferable that the charge generation layer 106 is transparent to visible light (specifically, the transmittance of visible light to the charge generation layer 106 is 40% or more). In addition, the charge generation layer 106 can function even if its conductivity is lower than that of the first electrode 101 or the second electrode 102.

[0059] Figure 2C shows the laminated structure of the EL layer 103 of a light-emitting device according to one embodiment of the present invention. In this case, the first electrode 101 functions as a cathode and the second electrode 102 functions as an anode. The EL layer 103 has a structure in which an electron injection layer 115, an electron transport layer 114, a light-emitting layer 113, a hole transport layer 112, a hole injection layer 111, and an oxidation-resistant layer 105 are sequentially laminated on the first electrode 101. The light-emitting layer 113 may also be a structure in which multiple light-emitting layers of different emission colors are laminated. For example, a light-emitting layer containing a red light-emitting material, a light-emitting layer containing a green light-emitting material, and a light-emitting layer containing a blue light-emitting material may be laminated, or laminated via a layer having a carrier transport material. Alternatively, a combination of a light-emitting layer containing a yellow light-emitting material and a light-emitting layer containing a blue light-emitting material may be used. However, the laminated structure of the light-emitting layer 113 is not limited to the above. For example, the light-emitting layer 113 may be a structure in which multiple light-emitting layers of the same emission color are stacked. For example, a first light-emitting layer containing a blue light-emitting material and a second light-emitting layer containing a blue light-emitting material may be stacked, or a structure in which they are stacked via a layer having a carrier transport material. In the case of a structure in which multiple light-emitting layers of the same emission color are stacked, reliability can be increased compared to a single-layer structure. Also, even when there are multiple EL layers as in the tandem structure shown in Figure 2B, each EL layer is stacked sequentially from the cathode side as described above. Furthermore, if the first electrode 101 is the anode and the second electrode 102 is the cathode, the stacking order of the EL layers 103 is reversed. Specifically, 115 on the first electrode 101, which is the anode, becomes a hole injection layer, 114 becomes a hole transport layer, 113 becomes a light-emitting layer, 112 becomes an electron transport layer, and 111 becomes an electron injection layer.

[0060] The light-emitting layers 113 contained in the EL layers (103, 103a, 103b) each contain a light-emitting material or a combination of multiple materials as appropriate, and can be configured to produce fluorescence emission or phosphorescence emission exhibiting a desired emission color. Alternatively, the light-emitting layers 113 may be arranged in a laminated structure with different emission colors. In this case, the light-emitting material or other material used in each laminated light-emitting layer may be made of different materials. Furthermore, a configuration in which different emission colors can be obtained from multiple EL layers (103a, 103b) as shown in Figure 2B is also possible. In this case as well, the light-emitting material or other material used in each light-emitting layer may be made of different materials.

[0061] Furthermore, in a light-emitting device according to one aspect of the present invention, for example, by using a reflective electrode as the first electrode 101 shown in Figure 2C and a semi-transparent / semi-reflective electrode as the second electrode 102, and by using a micro-cavity structure, the light emitted from the light-emitting layer 113 contained in the EL layer 103 can be made to resonate between the two electrodes, thereby strengthening the light emitted from the second electrode 102.

[0062] Furthermore, if the first electrode 101 of the light-emitting device is a reflective electrode consisting of a laminated structure of a reflective conductive material and a translucent conductive material (transparent conductive film), optical adjustment can be performed by controlling the film thickness of the transparent conductive film. Specifically, it is preferable to adjust the optical distance (product of film thickness and refractive index) between the first electrode 101 and the second electrode 102 to be mλ / 2 (where m is a natural number of 1 or greater) or close to it, with respect to the wavelength λ of light obtained from the light-emitting layer 113.

[0063] Furthermore, in order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferable to adjust the optical distance from the first electrode 101 to the region of the light-emitting layer 113 where the desired light is obtained (light-emitting region), and the optical distance from the second electrode 102 to the region of the light-emitting layer 113 where the desired light is obtained (light-emitting region), so that they are (2m'+1)λ / 4 (where m' is a natural number greater than or equal to 1) or near that value. The light-emitting region referred to here is the region in the light-emitting layer 113 where holes and electrons recombine.

[0064] By performing such optical adjustments, the spectrum of specific monochromatic light obtained from the light-emitting layer 113 can be narrowed, resulting in emission with good color purity.

[0065] However, in the above case, the optical distance between the first electrode 101 and the second electrode 102 can be precisely defined as the total thickness from the reflective region of the first electrode 101 to the reflective region of the second electrode 102. However, since it is difficult to precisely determine the reflective region of the first electrode 101 or the second electrode 102, the above effects can be sufficiently obtained by assuming that any position on the first electrode 101 and the second electrode 102 are reflective regions. Furthermore, the optical distance between the first electrode 101 and the light-emitting layer from which the desired light is obtained can be precisely defined as the optical distance between the reflective region of the first electrode 101 and the light-emitting region of the light-emitting layer from which the desired light is obtained. However, since it is difficult to precisely determine the reflective region of the first electrode 101 or the light-emitting region of the light-emitting layer from which the desired light is obtained, the above effects can be sufficiently obtained by assuming that any position on the first electrode 101 is a reflective region and any position on the light-emitting layer from which the desired light is obtained is a light-emitting region.

[0066] The light-emitting device shown in Figure 2D is a light-emitting device having a tandem structure and a microcavity structure, which allows for the extraction of light of different wavelengths (monochromatic light) from each EL layer (103a, 103b). Therefore, it eliminates the need for separate coatings to obtain different emission colors (for example, a Side By Side (SBS) structure with RGB colors). Consequently, it is easy to achieve high resolution. It can also be combined with a colored layer (color filter). Furthermore, it is possible to strengthen the emission intensity in the front direction at a specific wavelength, thereby reducing power consumption. Note that the EL layer 103b has an oxidation-resistant layer 105.

[0067] The light-emitting device shown in Figure 2E is an example of a tandem-structured light-emitting device shown in Figure 2B. As shown in the figure, it has a structure in which three EL layers (103a, 103b, 103c) are stacked with charge generation layers (106a, 106b) in between. Each of the three EL layers (103a, 103b, 103c) has a light-emitting layer (113a, 113b, 113c), and the light-emitting colors of each light-emitting layer can be freely combined. For example, light-emitting layer 113a can be blue, light-emitting layer 113b can be red, green, or yellow, and light-emitting layer 113c can be blue. Alternatively, light-emitting layer 113a can be red, light-emitting layer 113b can be blue, green, or yellow, and light-emitting layer 113c can be red. The EL layer 103c has an oxidation-resistant layer 105.

[0068] In the light-emitting device according to one aspect of the present invention described above, at least one of the first electrode 101 and the second electrode 102 is a light-transmitting electrode (such as a transparent electrode or a semi-transparent / semi-reflective electrode). If the light-transmitting electrode is a transparent electrode, the transmittance of visible light of the transparent electrode shall be 40% or more. If it is a semi-transparent / semi-reflective electrode, the reflectance of visible light of the semi-transparent / semi-reflective electrode shall be 20% or more and 80% or less, preferably 40% or more and 70% or less. Furthermore, the resistivity of these electrodes shall be 1 × 10⁻⁶. -2 It is preferable to keep it below Ωcm.

[0069] Furthermore, in the light-emitting device according to one aspect of the present invention described above, if one of the first electrode 101 and the second electrode 102 is a reflective electrode (reflective electrode), the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. In addition, the resistivity of this electrode is 1 × 10⁻⁶. -2 It is preferable to keep it below Ωcm.

[0070] ≪Specific structure of a light-emitting device≫ Next, a specific structure of a light-emitting device according to one aspect of the present invention will be described. Here, Figure 2D, which has a tandem structure, will be used for the explanation. The configuration of the EL layer is the same for the light-emitting devices shown in Figures 2A and 2C, which do not have a tandem structure. Furthermore, if the light-emitting device shown in Figure 2D has a microcavity structure, the first electrode 101 is formed as a reflective electrode, and the second electrode 102 is formed as a semi-transparent / semi-reflective electrode. Therefore, one or more desired electrode materials can be used and formed in a single layer or in a stacked configuration. The second electrode 102 is formed after the EL layer 103b is formed, by selecting a material in the same manner as described above.

[0071] <First electrode and second electrode> As materials for forming the first electrode 101 and the second electrode 102, any combination of the following materials can be used as long as the functions of both electrodes described above are met. For example, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, these include In-Sn oxide (also called ITO), In-Si-Sn oxide (also called ITSO), In-Zn oxide, and In-W-Zn oxide. In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. In addition, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (for example, lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing these in appropriate combinations, as well as graphene and other materials can be used.

[0072] In the light-emitting device shown in Figure 2D, when the first electrode 101 is the cathode, the electron injection layer 115a and electron transport layer 114a of the EL layer 103a are sequentially laminated on the first electrode 101 by vacuum deposition. After the EL layer 103a and charge generation layer 106 are formed, the electron injection layer 115b and electron transport layer 114b of the EL layer 103b are similarly sequentially laminated on the charge generation layer 106.

[0073] <Hole injection layer> The hole injection layers (111, 111a, 111b) are layers that inject holes from the second electrode 102, which is the anode, or from the charge generation layers (106, 106a, 106b) into the EL layers (103, 103a, 103b), and are layers that contain either an organic acceptor material or a material with high hole injection potential, or both.

[0074] Organic acceptor materials are materials that can generate holes in an organic compound by separating its charge from other organic compounds whose LUMO level and HOMO level are close. Therefore, compounds having electron-withdrawing groups (e.g., halogen groups or cyano groups), such as quinodimethane derivatives, chloranil derivatives, or hexaazatriphenylene derivatives, can be used as organic acceptor materials. For example, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexazatriphenylene (abbreviated as HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviated as F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile, etc. can be used. Furthermore, among organic acceptor materials, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having multiple heteroatoms, such as HAT-CN, are particularly suitable because they have high acceptor properties and the film quality is stable with respect to heat. In addition, radialene derivatives having an electron-withdrawing group (especially a halogen group such as a fluoro group, or a cyano group) [3] are also preferred because they have very high electron-accepting properties. Specifically, α,α',α''-1,2,3-cyclopropanetriylidenates[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenates[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropanetriylidenates[2,3,4,5,6-pentafluorobenzeneacetonitrile] can be used.

[0075] Furthermore, as materials with high hole injection potential, oxides of metals belonging to groups 4 through 8 of the periodic table (such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, and other transition metal oxides) can be used. Specifically, examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. In addition, phthalocyanine compounds such as phthalocyanine (abbreviated as H2Pc) or copper phthalocyanine (abbreviated as CuPc) can be used.

[0076] In addition to the above materials, the low molecular weight compounds 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: DNTPD), 1,3,5- Aromatic amine compounds such as tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), and 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1) can be used.

[0077] Furthermore, polymer compounds (oligomers, dendrimers, polymers, etc.) such as poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltriphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD) can be used. Alternatively, polymer compounds to which acids such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (abbreviated as PEDOT / PSS) and polyaniline / poly(styrenesulfonic acid) (abbreviated as PAni / PSS) can be added can also be used.

[0078] Furthermore, as a material with high hole injection capabilities, a composite material containing a hole transport material and the aforementioned organic acceptor material (electron-accepting material) can also be used. In this case, electrons are extracted from the hole transport material by the organic acceptor material, generating holes in the hole injection layer 111, and these holes are injected into the light-emitting layer 113 via the hole transport layer 112. The hole injection layer 111 may be formed as a single layer of a composite material containing a hole transport material and an organic acceptor material (electron-accepting material), or it may be formed by laminating the hole transport material and the organic acceptor material (electron-accepting material) in separate layers.

[0079] Furthermore, for hole-transporting materials, the hole mobility at which the square root of the electric field strength [V / cm] is 600 is 1 × 10⁻⁶. -6 cm 2 A material having a hole mobility of / Vs or higher is preferred. However, any material that has higher hole transport than electron transport can be used.

[0080] Preferred hole-transporting materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, furan derivatives, or thiophene derivatives) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole-transporting properties.

[0081] Examples of the above-mentioned carbazole derivatives (compounds having a carbazole skeleton) include bicarbazole derivatives (e.g., 3,3'-bicarbazole derivatives) and aromatic amines having a carbazolyl group.

[0082] Furthermore, specific examples of the above-mentioned bicarbazole derivatives (for example, 3,3'-bicarbazole derivatives) include 3,3'-bis(9-phenyl-9H-carbazole) (abbreviated as PCCP), 9,9'-bis(1,1'-biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviated as BisBPCz), 9,9'-bis(1,1'-biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviated as BismBPCz), 9-(1,1'-biphenyl-3-yl)-9'-(1,1'-biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviated as mBPCCBP), and 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviated as βNCCP).

[0083] Furthermore, examples of aromatic amines having the above-mentioned carbazolyl group include 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBA1BP), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazole-3-amine (abbreviated as PCBiF), and N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3- [9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl) Diphenylamine (abbreviation: PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazole-3-yl)amine (abbreviation: PCA1BP), N,N'-bis(9-phenylcarbazole-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviation: PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9-phenylcarbazole-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3B), 9 ,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-Bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), 3,[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-Bis[N-(4-diphenylaminophenyl)-N-(1 Examples include -naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), 2-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]spiro-9,9'-bifluorene (abbreviation: PCASF), N-[4-(9H-carbazole-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazole-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F), and 4,4',4''-tris(carbazole-9-yl)triphenylamine (abbreviation: TCTA).

[0084] In addition to the above, other examples of carbazole derivatives include 3-[4-(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPPn), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), 1,3-bis(N-carbazolyl)benzene (abbreviated as mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviated as CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviated as CzTP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviated as TCPB), and 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as CzPA).

[0085] Furthermore, specific examples of the above-mentioned furan derivatives (compounds having a furan skeleton) include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II).

[0086] Furthermore, specific examples of the above-mentioned thiophene derivatives (compounds having a thiophene skeleton) include 1,3,5-tri(dibenzothiophen-4-yl)-benzene (abbreviated as DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviated as DBTFLP-III), and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as DBTFLP-IV).

[0087] Furthermore, the above aromatic amines specifically include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB or α-NPD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviated as TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as BPAFLP), and 4-phenyl-3 '-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), 2-[N-(4-diphenylaminophenyl)-N-phenylamino]spiro-9 ,9'-bifluorene (abbreviation: DPASF), 2,7-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-spiro-9,9'-bifluorene (abbreviation: DPA2SF), 4,4',4''-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1'-TNATA), 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: m-MTDATA), N, N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), DNTPD, 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)) ), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenyl Min (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-diphenyl-4''-(7-phenyl)na Phthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4' '-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazole-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazole-9-yl)phenyl]tris(1, 1'-biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazole-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi(9H-fluorene)-2-amine (abbreviation: PCBNBSF), N,N-bis([1,1'-bi Phenyl]-4-yl)-9,9'-spirobio[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis([1,1'-biphenyl]-4-yl)-9,9'-spirobio[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(1,1'-biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobio(9H-fluorene)-4-amine (abbreviation: oFBiSF), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), N,N-bis(9,9-dimethyl-9H-fluoren-2- Examples include N,N-bis(9,9-dimethyl-9H-fluoren-4-amine), N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-1-amine, etc.

[0088] In addition, polymer compounds (oligomers, dendrimers, polymers, etc.) such as poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltriphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD) can be used as hole transport materials. Alternatively, polymer compounds to which acids such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (abbreviated as PEDOT / PSS) and polyaniline / poly(styrenesulfonic acid) (abbreviated as PAni / PSS) can be added can also be used.

[0089] However, the hole transport material is not limited to the above, and various known materials may be used as a hole transport material by combining one or more of them.

[0090] The hole injection layers (111, 111a, 111b) can be formed using various known film deposition methods, for example, by vacuum deposition.

[0091] <Hole transport layer> The hole transport layers (112, 112a, 112b) are layers that transport holes injected from the first electrode 101 by the hole injection layers (111, 111a, 111b) to the light-emitting layers (113, 113a, 113b, 113c). The hole transport layers (112, 112a, 112b) are layers containing a hole-transporting material. Therefore, the hole transport layers (112, 112a, 112b) can use the same hole-transporting material that can be used in the hole injection layers (111, 111a, 111b).

[0092] In one embodiment of the present invention, the same organic compound used in the hole transport layer (112, 112a, 112b) can be used in the light-emitting layer (113, 113a, 113b, 113c). Using the same organic compound in both the hole transport layer (112, 112a, 112b) and the light-emitting layer (113, 113a, 113b, 113c) is preferable because it allows for more efficient transport of holes from the hole transport layer (112, 112a, 112b) to the light-emitting layer (113, 113a, 113b, 113c).

[0093] <Luminous layer> The light-emitting layers (113, 113a, 113b) are layers containing a light-emitting material. The light-emitting material that can be used in the light-emitting layers (113, 113a, 113b, 113c) can be any material that exhibits a light-emitting color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red. Furthermore, if there are multiple light-emitting layers, a configuration exhibiting different light-emitting colors can be achieved by using different light-emitting materials in each layer (for example, white light emission obtained by combining complementary light-emitting colors). Additionally, a laminated structure in which each light-emitting layer contains a different light-emitting material is also possible.

[0094] Furthermore, the light-emitting layers (113, 113a, 113b, 113c) may contain one or more types of organic compounds (host materials, etc.) in addition to the light-emitting substance (guest material).

[0095] Furthermore, when multiple host materials are used in the light-emitting layer (113, 113a, 113b, 113c), it is preferable to use a material with a larger energy gap than the energy gaps of the existing guest material and the first host material as the newly added second host material. It is also preferable that the lowest singlet excitation energy level (S1 level) of the second host material is higher than the S1 level of the first host material, and that the lowest triplet excitation energy level (T1 level) of the second host material is higher than the T1 level of the guest material. Furthermore, it is preferable that the lowest triplet excitation energy level (T1 level) of the second host material is higher than the T1 level of the first host material. With this configuration, an excitation complex can be formed using two types of host materials. In order to efficiently form the excitation complex, it is particularly preferable to combine a compound that readily accepts holes (hole transport material) with a compound that readily accepts electrons (electron transport material). This configuration also enables the simultaneous achievement of high efficiency, low voltage, and long lifespan.

[0096] The organic compounds used as the host material (including the first and second host materials) can be hole-transporting materials that can be used in the aforementioned hole-transporting layers (112, 112a, 112b), or electron-transporting materials that can be used in the electron-transporting layers (114, 114a, 114b) described later, as long as they satisfy the conditions for being a host material used in the light-emitting layer. An excited complex composed of multiple types of organic compounds (the first and second host materials) may also be used. An excited complex (also called an exciplex) that forms an excited state with multiple types of organic compounds has an extremely small difference between the S1 and T1 levels and functions as a TADF material that can convert triplet excitation energy into singlet excitation energy. Furthermore, as a combination of multiple types of organic compounds that form an excited complex, for example, it is preferable that one has a π-electron-deficient heteroaromatic ring and the other has a π-electron-rich heteroaromatic ring. Furthermore, as a combination for forming the excitation complex, one of the components may be a phosphorescent material such as an iridium, rhodium, or platinum-based organometallic complex, or a metal complex.

[0097] There are no particular limitations on the luminescent material that can be used in the luminescent layers (113, 113a, 113b, 113c). A luminescent material that converts singlet excitation energy into visible light emission, or a luminescent material that converts triplet excitation energy into visible light emission, can be used.

[0098] <<Luminescent material that converts singlet excitation energy into light emission>> Examples of luminescent materials that can be used in the light-emitting layer 113 to convert singlet excitation energy into light include the following fluorescent materials (fluorescent materials). For example, pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. Pyrene derivatives are particularly preferred because they have a high luminescence quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), (N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine) (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), and N,N'-bis(dibenzothiophen-2-yl)-N Examples include N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), and N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03).

[0099] Also, 5,6-bis[4-(10-phenyl-9-antryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-antryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-bis[4-(9H-carbazole-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazole (9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4'- (9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPA), 4-[4-(10-phenyl-9-antryl)phenyl]-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPBA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenyl) Nilen)bis[N,N',N'-triphenyl-1,4-phenylenediamine] (abbreviated as DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviated as 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as 2DPAPPA), etc. can be used.

[0100] Also, N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(1,1'-biphenyl- 2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracene-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracene-9-amine (abbreviation: DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubren, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-yl DCM1)propanedinitrile, 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluorantene-3,10-diamine (p -mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-Bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), 1,6BnfAP Examples include rn-03, 3,10-bis[N-(9-phenyl-9H-carbazole-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), and 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02). In particular, pyrenediamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 can be used.

[0101] <<Luminescent material that converts triplet excitation energy into light emission>> Next, examples of light-emitting materials that can be used in the light-emitting layer 113 to convert triplet excitation energy into light include phosphorescent materials (phosphorescent materials) or thermally activated delayed fluorescence (TADF) materials that exhibit thermally activated delayed fluorescence.

[0102] A phosphorescent material is a compound that exhibits phosphorescence and does not fluoresce at any temperature range above low temperatures (e.g., 77K) and below room temperature (i.e., between 77K and 313K). The phosphorescent material preferably contains a metal element with strong spin-orbit interaction, and examples include organometallic complexes, metal complexes (platinum complexes), and rare earth metal complexes. Specifically, transition metal elements are preferred, and particularly platinum group elements (ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or platinum (Pt)) are preferred. The presence of iridium is especially preferable because it increases the transition probability involved in the direct transition between the singlet ground state and the triplet excited state.

[0103] ≪Phosphorescent materials (450nm to 570nm: blue or green)≫ Examples of phosphorescent materials that exhibit blue or green light and have a peak wavelength of emission spectrum between 450 nm and 570 nm include the following:

[0104] For example, Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazole-3-yl-κN 2Phenyl-κC iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPr5btz)3]), organometallic complexes having a 4H-triazole skeleton such as these, tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), organometallic complexes having a 1H-triazole skeleton such as tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi)3]), organometallic complexes having an imidazole skeleton such as tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), bis[z-(4’,6’-difluorophenyl)pyridinato-N,C 2’ Iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4’,6’-difluorophenyl)pyridinato-N,C 2’ Iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3’,5’-bis(trifluoromethyl)phenyl]pyridinato-N,C<000​​Examples include organometallic complexes that use phenylpyridine derivatives having electron-withdrawing groups as ligands, such as iridium(III) acetylacetonate (abbreviated as Fir(acac)).

[0105] ≪Phosphorescent materials (495nm to 590nm: green or yellow)≫ Examples of phosphorescent materials that exhibit a green or yellow color and have a peak wavelength of emission spectrum between 495 nm and 590 nm include the following:

[0106] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert- (Ir(tBuppm)2(acac)) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm) Organometallic iridium(III) with a pyrimidine skeleton, such as (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation: [Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]). iridium complexes having a pyrazine skeleton, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyradinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyradinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), and tris(2-phenylpyridinato-N,C) 2’ Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinate-N,C) 2’Iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinate)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinate)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinate-N,C) 2’ Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C) 2’ iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-phenyl-2-pyridinyl-κN)phenyl-κC], iridium(III) (abbreviation: [Ir(ppy)2(4dppy)]), organometallic iridium complexes having a pyridine skeleton such as bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC], and bis(2,4-diphenyl-1,3-oxazolato-N,C 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl]pyridinate-N,C 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzothiazolat-N,C) 2’ Examples include organometallic complexes such as iridium(III) acetylacetonate (abbreviated as [Ir(bt)2(acac)]), as well as rare earth metal complexes such as tris(acetylacetonate)(monophenanthroline)terbium(III) (abbreviated as [Tb(acac)3(Phen)]).

[0107] ≪Phosphorescent materials (570nm to 750nm: yellow or red)≫ Examples of phosphorescent materials that exhibit a yellow or red color and have a peak wavelength of emission spectrum between 570 nm and 750 nm include the following:

[0108] For example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), (dipivaloylmethanato)bis[4,6-di(naphthalene-1-yl)pyrimidinato]iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), and other pyramidal compounds. Organometallic complexes having a limidine skeleton: (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedionato-κ 2 O,O') Iridium(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyradinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ 2 O,O') Iridium(III) (abbreviation: [Ir(dmdppr-dmCP)2(dpm)]), bis[2-(5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN)-4,6-dimethylphenyl-κC](2,2',6,6'-tetramethyl-3,5-heptanedionato-κ2O,O') Iridium(III) (abbreviation: [Ir(dmdppr-dmp)2(dpm)]), (acetylacetonato)bis[2-methyl-3-phenylquinoxalinato-N,C 2’ Iridium(III) (abbreviation: [Ir(mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C) 2’)Organometallic complexes having a pyrazine skeleton such as iridium(III) (abbreviation: [Ir(dpq)2(acac)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), or tris(1-phenylisoquinolinato-N,C) 2’ Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C) 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), bis[4,6-dimethyl-2-(2-quinolinyl-κN)phenyl-κC](2,4-pentanedionato-κ 2 Examples include organometallic complexes with a pyridine skeleton, such as O,O')iridium(III) (abbreviation: [Ir(dmpqn)2(acac)]), platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: [PtOEP]), and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]) and tris[1-(2-tenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]).

[0109] ≪TADF material≫ Furthermore, the following materials can be used as TADF materials. A TADF material is a material in which the difference between the S1 level and the T1 level is small (preferably 0.2 eV or less), the triplet excited state can be upconverted to the singlet excited state with a small amount of thermal energy (reverse intersystem crossing), and the emission (fluorescence) from the singlet excited state is efficiently exhibited. Furthermore, conditions for efficiently obtaining thermally activated delayed fluorescence include an energy difference between the triplet excited energy level and the singlet excited energy level being 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. In addition, delayed fluorescence in TADF materials refers to emission that has a spectrum similar to normal fluorescence but with a remarkably long lifetime. Its lifetime is 1 × 10⁻⁶ -6 For more than a second, preferably 1 × 10⁻⁶ seconds. -3 It is more than a second.

[0110] Examples of TADF materials include fullerenes or their derivatives, acridine derivatives such as proflavin, and eosin. Also, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) are also examples. Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complexes (abbreviated as SnF2(Proto IX)), mesoporphyrin-tin fluoride complexes (abbreviated as SnF2(Meso IX)), hematoporphyrin-tin fluoride complexes (abbreviated as SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complexes (abbreviated as SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complexes (abbreviated as SnF2(OEP)), etioporphyrin-tin fluoride complexes (abbreviated as SnF2(Etio I)), and octaethylporphyrin-platinum chloride complexes (abbreviated as PtCl2OEP).

[0111] [ka]

[0112] Other examples include 2-(biphenyl-4-yl)-4,6-bis(12-phenylindoro[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), and 2-[4-(10H-phenyl Noxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridine-10-yl)-9H-xanthene-9-one (abbreviation: ACRXTN), bis[4 -(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviation: ACRSA), 4-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)benzoflo[3,2-d]pyrimidine (abbreviation: 4PCCzBfpm), 4-[4-(9'-phenyl Heterocyclic compounds having π-electron-rich heteroaromatic rings and π-electron-deficient heteroaromatic rings, such as -3,3'-bi-9H-carbazole-9-yl)phenyl]benzofl[3,2-d]pyrimidine (abbreviation: 4PCCzPBfpm) and 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), may also be used.

[0113] Furthermore, a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferable because both the donor properties of the π-electron-rich heteroaromatic ring and the acceptor properties of the π-electron-deficient heteroaromatic ring become stronger, and the energy difference between the singlet excited state and the triplet excited state becomes smaller.

[0114] [ka]

[0115] In addition to the organic compounds mentioned above, other materials that have the function of converting triplet excitation energy into light emission include nanostructures of transition metal compounds having a perovskite structure. Nanostructures of metal halogen perovskites are particularly preferred. Nanoparticles and nanorods are preferred as such nanostructures.

[0116] In the light-emitting layers (113, 113a, 113b, 113c), the organic compounds (host materials, etc.) used in combination with the light-emitting material (guest material) described above may be one or more materials having an energy gap larger than the energy gap of the light-emitting material (guest material).

[0117] ≪Host materials for fluorescence emission≫ When the light-emitting material used in the light-emitting layer (113, 113a, 113b, 113c) is a fluorescent light-emitting material, it is preferable to use an organic compound (host material) that has a large singlet excited state energy level and a small triplet excited state energy level, or an organic compound with a high fluorescence quantum yield. Therefore, any organic compound that satisfies these conditions can be used, such as the hole transport material (described above) or electron transport material (described below) shown in this embodiment.

[0118] Although some of these overlap with the specific examples mentioned above, from the perspective of preferred combinations with luminescent substances (fluorescent substances), examples of organic compounds (host materials) include condensed polycyclic aromatic compounds such as anthracene derivatives, tetracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, and dibenzo[g,p]chrysene derivatives.

[0119] Specific examples of organic compounds (host materials) that are preferable to use in combination with fluorescent luminescent substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviated as PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviated as DPCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), 9,10-diphenylanthracene (abbreviated as DPAnth), and N,N-diphenyl-9-[4 -(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazole-3-amine (abbreviation: PCAPBA), N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), 6,12-dimethoxy-5,1 1-Diphenylchrysene, N,N,N',N',N'',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation :2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)-biphenyl-4'-yl}anthracene (abbreviation: FLPPA), 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9,9'-biantryl (abbreviation: BANT), 9,9'-(stilbene-3,3'-diyl)diphenanthrene (abbreviation: DPNS), 9,Examples include 9'-(stilbene-4,4'-diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl)benzene (abbreviation: TPB3), 5,12-diphenyltetracene, and 5,12-bis(biphenyl-2-yl)tetracene.

[0120] ≪Host materials for phosphorescence≫ Furthermore, when the luminescent material used in the luminescent layers (113, 113a, 113b, 113c) is a phosphorescent material, it is sufficient to select an organic compound (host material) to combine with it that has a triplet excitation energy greater than the triplet excitation energy of the luminescent material (the energy difference between the ground state and the triplet excited state). When using multiple organic compounds (for example, a first host material and a second host material (or assist material), etc.) in combination with the luminescent material to form an excited complex, it is preferable to mix these multiple organic compounds with the phosphorescent material.

[0121] This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excited complex to the luminescent material. The combination of organic compounds should ideally be one that readily forms an excited complex, and a combination of a compound that readily accepts holes (hole transport material) and a compound that readily accepts electrons (electron transport material) is particularly preferable.

[0122] Although some of these overlap with the specific examples mentioned above, from the perspective of preferred combinations with luminescent substances (phosphorescent substances), examples of organic compounds (host materials, assist materials) include aromatic amines, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, zinc and aluminum-based metal complexes, oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, phenanthroline derivatives, and the like.

[0123] Furthermore, among the above-mentioned organic compounds, specific examples of aromatic amines and carbazole derivatives, which are organic compounds with high hole transport properties, are the same as the specific examples of hole transport materials described above, and all of these are preferred as host materials.

[0124] Furthermore, among the above organic compounds, specific examples of dibenzothiophene derivatives and dibenzofuran derivatives, which are organic compounds with high hole transport properties, include 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), DBT3P-II, and 2,8-diphenyl Examples include nyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviated as DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as DBTFLP-IV), and 4-[3-(triphenylene-2-yl)phenyl]dibenzothiophene (abbreviated as mDBTPTp-II), all of which are preferred as host materials.

[0125] Furthermore, among the above organic compounds, specific examples of metal complexes that are organic compounds with high electron transport properties (electron transport materials) include zinc or aluminum-based metal complexes such as tris(8-quinolinolato)aluminum(III) (abbreviated as Alq), tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviated as Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviated as BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviated as BAlq), bis(8-quinolinolato)zinc(II) (abbreviated as Znq), as well as metal complexes having a quinoline skeleton or a benzoquinoline skeleton, all of which are preferred as host materials.

[0126] Other preferred host materials include metal complexes having oxazole-based or thiazole ligands such as bis[2-(2-benzoxazolyl)phenolate]zinc(II) (abbreviated as ZnPBO) and bis[2-(2-benzothiazolyl)phenolate]zinc(II) (abbreviated as ZnBTZ).

[0127] Furthermore, among the above, specific examples of organic compounds with high electron transport properties (electron transport materials), such as oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, and phenanthroline derivatives, include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviation: OXD-7), and 9-[4-(5-butylphenyl] [Phenyl-1,3,4-oxadiazole-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(biphenylyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (abbreviation: TAZ), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'- Bis(5-methylbenzoxazole-2-yl)stilbene (abbreviation: BzOS), vasophenanthroline (abbreviation: Bphen), vasocuproin (abbreviation: BCP), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation :2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,Examples include [h]quinoxaline (abbreviation: 6mDBTPDBq-II), and all of these are preferred as host materials.

[0128] Furthermore, among the above, specific examples of organic compounds with high electron transport properties (electron transport materials), such as heterocyclic compounds having a diazine skeleton, heterocyclic compounds having a triazine skeleton, and heterocyclic compounds having a pyridine skeleton, include 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), and 2-{4-[3-(N-phenyl-9H- Examples include rubazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviated as mPCCzPTzn-02), 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviated as 35DCzPPy), and 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviated as TmPyPB), all of which are preferred as host materials.

[0129] Other polymer compounds such as poly(2,5-pyridinediyl) (abbreviated as PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviated as PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviated as PF-BPy) are also preferred as host materials.

[0130] Furthermore, bipolar 9-phenyl-9'-(4-phenyl-2-quinazolinyl)-3,3'-bi-9H-carbazol (abbreviated as PCCzQz), which is an organic compound with high hole transport and electron transport properties, can also be used as a host material.

[0131] <Electron transport layer> The electron transport layers (114, 114a, 114b) are layers that transport electrons injected from the second electrode 102 or the charge generation layer (106, 106a, 106b) by the electron injection layer (115, 115a, 115b), described later, to the light-emitting layer (113, 113a, 113b, 113c). The electron transport layers (114, 114a, 114b) are layers containing an electron-transporting material. The electron-transporting material used in the electron transport layers (114, 114a, 114b) has an electron mobility of 1 × 10⁻¹⁰ at an electric field strength [V / cm] square root of 600. -6 cm 2 Materials with an electron mobility of / Vs or higher are preferred. However, other materials can be used as long as they have higher electron transport capabilities than holes. In addition, although the electron transport layers (114, 114a, 114b) can function as single layers, device characteristics can be improved by creating a stacked structure of two or more layers as needed.

[0132] ≪Electron transport material≫ Examples of electron-transporting materials that can be used in the electron transport layers (114, 114a, 114b) include organic compounds having a structure in which an aromatic ring is condensed onto a furan ring of a phlodiazine skeleton, metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, and other heterocyclic compounds such as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, or other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.

[0133] Specific examples of electron transport materials include 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), and 2-{3-[3-(dibenzothiophen- 4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 4-[3-(dibenzothiophen-4-yl)phenyl]-8-(naphthalene-2-yl)-[1]benzoflo[3,2-d]pyrimidine (abbreviation: 8βN-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzoflo[2,3-b]pyrazine (abbreviation: 3,8mDBtP2B fpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzoflo[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 9-[(3'-dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 8-[3'-(dibenzothiophen-4-yl)(1,1'-biphenyl-3-yl)]naphtho To[1',2':4,5]flo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthalene)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzoflo[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 8-(1,1'-biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzoflo[3,Examples include metal complexes having a quinoline or benzoquinoline skeleton, such as [2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), tris(8-quinolinolato)aluminum(III) (abbreviation: Alq3), Almq3, BeBq2, bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), and bis(8-quinolinolato)zinc(II) (abbreviation: Znq); and metal complexes having an oxazole or thiazole skeleton, such as bis[2-(2-benzoxazollyl)phenolato]zinc(II) (abbreviation: ZnPBO) and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ).

[0134] In addition to metal complexes, other electron transport materials can also be used, including oxadiazole derivatives such as PBD, OXD-7, and CO11; triazole derivatives such as TAZ and p-EtTAZ; imidazole derivatives (including benzimidazole derivatives) such as TPBI and mDBTBIm-II; oxazole derivatives such as BzOs; phenanthroline derivatives such as Bphen, BCP, and NBphen; quinoxaline derivatives such as 2mDBTPDBq-II, 2mDBTBPDBq-II, 2mCzBPDBq, 2CzPDBq-III, 7mDBTPDBq-II, and 6mDBTPDBq-II; dibenzoquinoxaline derivatives; pyridine derivatives such as 35DCzPPy and TmPyPB; pyrimidine derivatives such as 4,6mPnP2Pm, 4,6mDBTP2Pm-II, and 4,6mCzP2Pm; and triazine derivatives such as PCCzPTzn and mPCCzPTzn-02.

[0135] Furthermore, polymer compounds such as poly(2,5-pyridinediyl) (abbreviated as PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviated as PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviated as PF-BPy) can also be used as electron transport materials.

[0136] Furthermore, the electron transport layers (114, 114a, 114b) may be not only single layers, but also have a structure in which two or more layers made of the above material are stacked.

[0137] <Electron injection layer> The electron injection layers (115, 115a, 115b) are layers containing a material with high electron injection capabilities. Furthermore, the electron injection layers (115, 115a, 115b) are layers for increasing the electron injection efficiency from the second electrode 102, and it is preferable to use a material in which the difference between the work function value of the material used for the second electrode 102 and the LUMO level value of the material used for the electron injection layers (115, 115a, 115b) is small (0.5 eV or less). Therefore, the electron injection layers (115, 115a, 115b) contain lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-(quinolinolato)lithium (abbreviated as Liq), 2-(2-pyridyl)phenolate (abbreviated as LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl)phenolate (abbreviated as LiPPP), and lithium oxide (LiO x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Rare earth metal compounds such as erbium fluoride (ErF3) can also be used. Electrides may also be used in the electron injection layers (115, 115a, 115b). Examples of electrides include substances obtained by adding a high concentration of electrons to a mixed oxide of calcium and aluminum. The materials that constitute the electron transport layers (114, 114a, 114b) described above can also be used.

[0138] Furthermore, a composite material obtained by mixing an organic compound with an electron donor may be used in the electron injection layers (115, 115a, 115b). Such a composite material exhibits excellent electron injection and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material with excellent electron transport properties, and specifically, for example, an electron transport material (metal complex, or heteroaromatic compound, etc.) used in the electron transport layers (114, 114a, 114b) described above can be used. The electron donor can be any substance that exhibits electron-donating properties to the organic compound. Specifically, alkali metals, alkaline earth metals, or rare earth metals are preferred, such as lithium, cesium, magnesium, calcium, erbium, and ytterbium. Alkali metal oxides or alkaline earth metal oxides are also preferred, such as lithium oxide, calcium oxide, and barium oxide. Lewis bases such as magnesium oxide can also be used. In addition, organic compounds such as tetrathiafulvalene (abbreviated as TTF) can also be used.

[0139] In addition, composite materials made by mixing an organic compound and a metal may be used for the electron injection layers (115, 115a, 115b). The organic compound used here preferably has a LUMO (Lowest Unoccupied Molecular Orbital) level of -3.6 eV or higher and -2.3 eV or lower. Furthermore, materials having lone pairs of electrons are preferred.

[0140] Therefore, as the above organic compounds, materials having lone pairs of electrons, such as heterocyclic compounds having a pyridine skeleton, a diazine skeleton (pyrimidine or pyrazine), or a triazine skeleton, are preferred.

[0141] Examples of heterocyclic compounds containing a pyridine skeleton include 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), vasocuproin (abbreviation: BCP), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), and vasophenanthroline (abbreviation: Bphen).

[0142] Furthermore, heterocyclic compounds having a diazine skeleton include 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazole-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), and 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h Examples include quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), and 4-{3-[3'-(9H-carbazole-9-yl)]biphenyl-3-yl}benzoflo[3,2-d]pyrimidine (abbreviation: 4mCzBPBfpm).

[0143] Furthermore, examples of heterocyclic compounds having a triazine skeleton include 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), and 2,4,6-tris(2-pyridyl)-1,3,5-triazine (abbreviation: 2Py3Tz).

[0144] Furthermore, it is preferable to use materials belonging to Group 5, Group 7, Group 9, Group 11, or Group 13 of the periodic table as the metal, such as Ag, Cu, Al, or In. In this case, the organic compound forms a partially occupied molecular orbital (SOMO) with the metal.

[0145] For example, when amplifying the light obtained from the light-emitting layer 113b, it is preferable to form the optical distance between the second electrode 102 and the light-emitting layer 113b to be less than 1 / 4 of the wavelength λ of the light emitted by the light-emitting layer 113b. In this case, this can be adjusted by changing the film thickness of the electron transport layer 114b or the electron injection layer 115b.

[0146] Furthermore, as shown in the light-emitting device in Figure 2D, by providing a charge generation layer 106 between two EL layers (103a, 103b), it is possible to create a structure in which multiple EL layers are stacked between a pair of electrodes (also called a tandem structure).

[0147] <Charge generation layer> The charge generation layer 106 has the function of injecting electrons into the EL layer 103a and holes into the EL layer 103b when a voltage is applied between the first electrode (cathode) 101 and the second electrode (anode) 102. The charge generation layer 106 may be a configuration in which electron acceptors are added to a hole transport material (also called a P-type layer), or a configuration in which electron donors are added to an electron transport material (also called an electron injection buffer layer). Furthermore, both of these configurations may be stacked. In addition, an electron relay layer may be provided between the P-type layer and the electron injection buffer layer. By forming the charge generation layer 106 using the materials described above, it is possible to suppress the increase in driving voltage when the EL layers are stacked.

[0148] In the charge generation layer 106, when an electron acceptor is added to a hole-transporting material which is an organic compound (P-type layer), the material shown in this embodiment can be used as the hole-transporting material. Examples of electron acceptors include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), chloranil, etc. Other examples include oxides of metals belonging to groups 4 to 8 of the periodic table. Specifically, examples include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. The acceptor material mentioned above may also be used. Furthermore, the P-type layer may be a mixed film formed by mixing the hole-transporting material and the electron acceptor, or a single film containing the hole-transporting material and a single film containing the electron acceptor may be laminated together.

[0149] Furthermore, in the charge generation layer 106, if an electron donor is added to the electron transport material (electron injection buffer layer), the materials shown in this embodiment can be used as the electron transport material. As the electron donor, alkali metals, alkaline earth metals, rare earth metals, or metals belonging to groups 2 and 13 of the periodic table, as well as their oxides and carbonates, can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li2O), cesium carbonate, etc., are preferred. Organic compounds such as tetrathianaphthalene may also be used as electron donors.

[0150] In the charge generation layer 106, when an electron relay layer is provided between the P-type layer and the electron injection buffer layer, the electron relay layer contains at least an electron-transporting material and has the function of preventing interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. Preferably, the LUMO level of the electron-transporting material included in the electron relay layer is between the LUMO level of the acceptor material in the P-type layer and the LUMO level of the electron-transporting material included in the electron transport layer in contact with the charge generation layer 106. The specific energy level of the LUMO level of the electron-transporting material used in the electron relay layer is preferably -5.0 eV or higher, preferably -5.0 eV or higher and -3.0 eV or lower. Preferably, as the electron-transporting material used in the electron relay layer, a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand is used.

[0151] Although Figure 2D shows a configuration in which two EL layers 103 are stacked, a stacked structure of three or more EL layers may be used by providing a charge generation layer between different EL layers.

[0152] <Circuit board> The light-emitting device shown in this embodiment can be formed on various substrates. The type of substrate is not limited to any particular type. Examples of substrates include semiconductor substrates (e.g., single crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, plastic substrates, metal substrates, stainless steel substrates, substrates with stainless steel foil, tungsten substrates, substrates with tungsten foil, flexible substrates, laminated films, paper containing fibrous materials, or base films.

[0153] Examples of glass substrates include barium borosilicate glass, aluminobrosilicate glass, or soda-lime glass. Examples of flexible substrates, laminated films, and base films include plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyethersulfone (PES), synthetic resins such as acrylic, polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride, polyamide, polyimide, aramid, epoxy, inorganic vapor-deposited films, or paper.

[0154] In this embodiment, the light-emitting device can be fabricated using a vacuum process such as vapor deposition, or a solution process such as spin coating or inkjet. When using vapor deposition, physical vapor deposition methods (PVD) such as sputtering, ion plating, ion beam deposition, molecular beam deposition, or vacuum deposition, or chemical vapor deposition (CVD) can be used. In particular, the functional layers included in the EL layer of light-emitting devices (hole injection layers (111, 111a, 111b), hole transport layers (112, 112a, 112b), light-emitting layers (113, 113a, 113b, 113c), electron transport layers (114, 114a, 114b), electron injection layers (115, 115a, 115b)), and charge generation layers (106, 106a, 106b) can be formed by methods such as vapor deposition (vacuum deposition, etc.), coating (dip coating, die coating, bar coating, spin coating, spray coating, etc.), and printing (inkjet, screen printing, offset printing, flexographic printing, gravure, microcontact, etc.).

[0155] Furthermore, when applying the above-mentioned coating method, printing method, or other film formation method, polymer compounds (oligomers, dendrimers, polymers, etc.), medium-molecular-weight compounds (compounds in the intermediate region between low-molecular-weight and high-molecular-weight compounds: molecular weight 400-4000), inorganic compounds (quantum dot materials, etc.) can be used. As for quantum dot materials, colloidal quantum dot materials, alloy-type quantum dot materials, core-shell type quantum dot materials, core-type quantum dot materials, etc., can be used.

[0156] The functional layers (hole injection layers (111, 111a, 111b), hole transport layers (112, 112a, 112b), light-emitting layers (113, 113a, 113b, 113c), electron transport layers (114, 114a, 114b), electron injection layers (115, 115a, 115b)) or charge generation layers (106, 106a, 106b) that constitute the EL layer (103, 103a, 103b, 103c) of the light-emitting device shown in this embodiment are not limited to the materials shown in this embodiment, and other materials can be used in combination as long as they can satisfy the function of each layer.

[0157] The configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments.

[0158] (Embodiment 2) This embodiment describes a specific configuration example and manufacturing method of a light-emitting device (also called a display panel) which is one aspect of the present invention.

[0159] <Example of configuration of light-emitting device 700 1> The light-emitting device 700 shown in Figure 3A includes light-emitting devices 550B, 550G, 550R, and a partition wall 528. The light-emitting devices 550B, 550G, 550R, and the partition wall 528 are formed on a functional layer 520 provided on a first substrate 510. The functional layer 520 includes a drive circuit GD composed of multiple transistors, a drive circuit SD, a pixel circuit, and wiring to electrically connect them. These drive circuits are electrically connected to the light-emitting devices 550B, 550G, and 550R, respectively, and can drive them. The light-emitting device 700 also includes an insulating layer 705 on the functional layer 520 and each light-emitting device, and the insulating layer 705 has the function of bonding the functional layer 520 to the second substrate 770. While the drawing illustrates a configuration with a partition wall 528, the device is not limited to this configuration. For example, a configuration without the partition wall 528 is also possible. The drive circuits GD and SD will be described later in Embodiment 3.

[0160] Furthermore, the light-emitting devices 550B, 550G, and 550R have the device structure shown in Embodiment 1. In particular, Figure 2A shows a case where the EL layer 103 in the structure shown is different for each light-emitting device.

[0161] The light-emitting device 550B includes an electrode 551B, an electrode 552, an EL layer 103B, an oxidation-resistant layer 105B, and a block layer 107. The specific configuration of each layer is as shown in Embodiment 1. The EL layer 103B has a laminated structure consisting of multiple layers with different functions, including the light-emitting layer 113B. The oxidation-resistant layer 105B is included in the EL layer 103B. In Figure 3A, only the electron injection / transport layer 104B and the oxidation-resistant layer 105B are shown among the layers included in the EL layer 103B, which includes the light-emitting layer 113B, but the present invention is not limited to this. The electron injection / transport layer 104B refers to a layer having the functions of an electron injection layer and an electron transport layer as shown in Embodiment 1, and may have a laminated structure. In this specification, the electron injection / transport layer can be interpreted in this way in any light-emitting device. Similarly, the hole injection / transport layer is a layer having the functions of a hole injection layer and a hole transport layer, and may have a laminated structure.

[0162] Furthermore, the block layer 107 is formed to cover the EL layer 103B formed on the electrode 551B. As shown in Figure 3A, the EL layer 103B has sides (or edges). Therefore, the block layer 107 is formed in contact with the sides (or edges) of the EL layer 103B. This makes it possible to suppress the intrusion of oxygen and moisture, or their constituent elements, into the interior from the sides of the EL layer 103B. The electron-transporting material shown in Embodiment 1 can be used for the block layer 107. Here, since the block layer 107 is provided between the electrode 551B and the EL layer 103B and is formed using an electron-transporting material, it can also be considered as a part of the EL layer 103B.

[0163] Furthermore, electrode 552 is formed on block layer 107. Electrode 551B and electrode 552 have overlapping regions. Additionally, an EL layer 103B is present between electrode 551B and electrode 552. Therefore, electrode 552 has a structure in which it contacts the side (or edge) of EL layer 103B via block layer 107. This prevents electrical short circuits between EL layer 103B and electrode 552, more specifically, between the electron injection / transport layer 104B of EL layer 103B and electrode 552. Therefore, it is preferable that block layer 107 has at least a layer with high electrical resistance. However, since block layer 107 is provided between electrode 551B and EL layer 103B, it is more preferable that it has at least a layer with low electrical resistance. Therefore, it is preferable to have a laminated structure having at least the first block layer 107-1 in contact with the EL layer 103B as a layer with high electrical resistance made only of an electron-transporting material, and the second block layer 107-2 in contact with the electrode 552 as a layer with low electrical resistance made by doping an electron-transporting material with metal ions or the like in a film. However, considering the characteristics of the light-emitting device, it is more preferable to provide a third block layer (not shown) between the EL layer 103B and the first block layer 107-1 as a layer with low electrical resistance made by doping an electron-transporting material with metal ions or the like in a film.

[0164] The EL layer 103B shown in Figure 3A has the same configuration as the EL layers 103, 103a, 103b, and 103c described in Embodiment 1. Furthermore, the EL layer 103B can emit, for example, blue light.

[0165] The light-emitting device 550G includes an electrode 551G, an electrode 552, an EL layer 103G, an oxidation-resistant layer 105G, and a block layer 107. The specific configuration of each layer is as shown in Embodiment 1. The EL layer 103G has a laminated structure consisting of multiple layers with different functions, including the light-emitting layer 113G. The oxidation-resistant layer 105G is included in the EL layer 103G. In Figure 3A, only the electron injection / transport layer 104G and the oxidation-resistant layer 105G are shown among the layers included in the EL layer 103G, which includes the light-emitting layer 113G, but the present invention is not limited to this. The electron injection / transport layer 104G refers to a layer having the functions of an electron injection layer and an electron transport layer as shown in Embodiment 1, and may have a laminated structure.

[0166] Furthermore, the block layer 107 is formed covering the EL layer 103G formed on the electrode 551G. As shown in Figure 3A, the EL layer 103G has sides (or edges). Therefore, the block layer 107 is formed in contact with the sides (or edges) of the EL layer 103G. This makes it possible to suppress the intrusion of oxygen and moisture, or their constituent elements, into the interior from the sides of the EL layer 103G. The electron transport material shown in Embodiment 1 can be used for the block layer 107.

[0167] Furthermore, electrode 552 is formed on block layer 107. Electrode 551G and electrode 552 have overlapping regions. Additionally, an EL layer 103G is present between electrode 551G and electrode 552. Therefore, electrode 552 has a structure in which it contacts the side surface of EL layer 103G via block layer 107. This prevents electrical short circuits between EL layer 103G and electrode 552, or more specifically, between the electron injection / transport layer 104G of EL layer 103G and electrode 552.

[0168] The EL layer 103G shown in Figure 3A has the same configuration as the EL layers 103, 103a, 103b, and 103c described in Embodiment 1. Furthermore, the EL layer 103G can emit, for example, green light.

[0169] The light-emitting device 550R includes an electrode 551R, an electrode 552, an EL layer 103R, an oxidation-resistant layer 105R, and a block layer 107. The specific configuration of each layer is as shown in Embodiment 1. The EL layer 103R has a laminated structure consisting of multiple layers with different functions, including the light-emitting layer 113R. The oxidation-resistant layer 105R is included in the EL layer 103R. In Figure 3A, only the electron injection / transport layer 104R and the oxidation-resistant layer 105R are shown among the layers included in the EL layer 103R, which includes the light-emitting layer 113R, but the present invention is not limited to this. The electron injection / transport layer 104R refers to a layer having the functions of an electron injection layer and an electron transport layer as shown in Embodiment 1, and may have a laminated structure.

[0170] Furthermore, the block layer 107 is formed to cover the EL layer 103R formed on the electrode 551R. As shown in Figure 3A, the EL layer 103R has sides (or edges). Therefore, the block layer 107 is formed in contact with the sides (or edges) of the EL layer 103R. This makes it possible to suppress the intrusion of oxygen and moisture, or their constituent elements, into the interior from the sides of the EL layer 103R. The electron transport material shown in Embodiment 1 can be used for the block layer 107.

[0171] Furthermore, electrode 552 is formed on block layer 107. Electrode 551R and electrode 552 have overlapping regions. Additionally, an EL layer 103R is present between electrode 551R and electrode 552. Therefore, electrode 552 has a structure in which it contacts the side surface of EL layer 103R via block layer 107. This prevents electrical short circuits between EL layer 103R and electrode 552, or more specifically, between the electron injection / transport layer 104R of EL layer 103R and electrode 552.

[0172] The EL layer 103R shown in Figure 3A has the same configuration as the EL layers 103, 103a, 103b, and 103c described in Embodiment 1. Furthermore, the EL layer 103R can emit, for example, red light.

[0173] A gap 580 is provided between each of the EL layers 103B, 103G, and 103R. In each EL layer, the electron injection layer, which is included in the electron transport region located between the cathode and the light-emitting layer 113, often has high conductivity. Therefore, if it is formed as a layer common to adjacent light-emitting devices, it may cause crosstalk. Accordingly, by providing a gap 580 between each EL layer as shown in this example configuration, it is possible to suppress the occurrence of crosstalk between adjacent light-emitting devices.

[0174] In a high-resolution light-emitting device (display panel) with a resolution exceeding 1000 ppi, if electrical conductivity is detected between the EL layer 103B, EL layer 103G, and EL layer 103R, a crosstalk phenomenon occurs, narrowing the color gamut that the light-emitting device can display. By providing a gap 580 in a high-resolution display panel exceeding 1000 ppi, preferably a high-resolution display panel exceeding 2000 ppi, and more preferably an ultra-high-resolution display panel exceeding 5000 ppi, a display panel capable of displaying vivid colors can be provided.

[0175] As shown in Figure 3B, the partition wall 528 has openings 528B, 528G, and 528R. As shown in Figure 3A, opening 528B overlaps with electrode 551B, opening 528G overlaps with electrode 551G, and opening 528R overlaps with electrode 551R.

[0176] Furthermore, since the separation process of these EL layers (EL layer 103B, EL layer 103G, and EL layer 103R) is performed using photolithography to form patterns, a high-definition light-emitting device (display panel) can be manufactured. In addition, the edges of the EL layers processed by the photolithography pattern formation (the side surfaces of the laminated structure constituting the EL layers) have a shape that is substantially the same surface (or substantially located on the same plane). At this time, the width of the gap 580 provided between each EL layer is preferably 5 μm or less, and more preferably 1 μm or less.

[0177] In EL layers, the electron injection layer, particularly the electron transport region located between the cathode and the light-emitting layer, often has high conductivity. Therefore, if it is formed as a common layer for adjacent light-emitting devices, it can cause crosstalk. Consequently, by separating the EL layer using photolithography, as shown in this example configuration, it is possible to suppress the occurrence of crosstalk between adjacent light-emitting devices.

[0178] <Example 1 of a manufacturing method for a light-emitting device> As shown in Figure 4A, electrodes 551B, 551G, and 551R are formed. For example, a conductive film is formed on a functional layer 520 formed on the first substrate 510, and then processed into a predetermined shape using photolithography.

[0179] For the formation of conductive films, methods such as sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), and atomic layer deposition (ALD) can be used. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD).

[0180] In addition to the photolithography method described above, other methods such as nanoimprint lithography, sandblasting, and lift-off lithography may be used to process the conductive film. Furthermore, island-like thin films may be directly formed using a film deposition method that utilizes a shielding mask such as a metal mask. Here, "island-like" refers to a state where a layer formed in the same process using the same material is separated from the other layers when viewed in a planar manner.

[0181] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0182] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of light for exposure. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0183] For etching thin films using a resist mask, methods such as dry etching, wet etching, and sandblasting can be used.

[0184] Next, as shown in Figure 4B, a partition wall 528 is formed between electrodes 551B and 551G. For example, the partition wall 528 can be formed by forming an insulating film covering electrodes 551B, 551G, and 551R, creating an opening using photolithography, and exposing a portion of electrodes 551B, 551G, and 551R. Materials that can be used for the partition wall 528 include inorganic materials, organic materials, or composite materials of inorganic and organic materials. Specifically, inorganic oxide films, inorganic nitride films, or inorganic oxidnitride films, or laminated materials made by laminating multiple films selected from these, more specifically, silicon oxide films, films containing acrylic, or films containing polyimide, or laminated materials made by laminating multiple films selected from these can be used.

[0185] Next, as shown in Figure 5A, an EL layer 103B is formed on electrodes 551B, 551G, 551R, and partition wall 528. In this configuration example, the EL layer 103B includes an emissive layer 113B, an electron injection / transport layer 104B, and an oxidation-resistant layer 105B. For example, the EL layer 103B is formed using a vacuum deposition method to cover electrodes 551B, 551G, 551R, and partition wall 528.

[0186] The oxidation-resistant layer 105B is formed using an oxidation-resistant material. Specifically, a composite material in which an electron acceptor material is added to a hole-transporting material, which is an organic compound, as listed in Embodiment 1 as a material that can be used for the charge generation layer of the EL layer, or a laminated structure of a hole-transporting material and an electron acceptor material can be used. Furthermore, as the electron acceptor material, the material listed in Embodiment 1 as the organic acceptor material used for the hole injection layer can be used. By using a metal oxide as the electron acceptor material, oxidation resistance can be improved.

[0187] Examples of metal oxides include oxides of metals belonging to groups 4 through 8 of the periodic table. Specifically, these include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. Furthermore, as organic compounds, materials listed as hole transport materials can be used.

[0188] Furthermore, by setting the composition of the metal oxide and organic compound contained in the oxidation-resistant layer 105B to a predetermined value, it is possible to suppress the dissolution of the oxidation-resistant layer 105B when a resist is formed on the oxidation-resistant layer 105B in a subsequent process. Regarding the composition of the metal oxide and organic compound used in the oxidation-resistant layer 105B, it is preferable that the weight of the organic compound be 1 / 100 to 100 times the weight of the metal oxide, and more preferably 1 / 20 to 20 times, taking into account the film thickness and transmittance of the oxidation-resistant layer 105B.

[0189] Next, as shown in Figure 5B, the EL layer 103B on electrode 551B is processed into a predetermined shape. For example, a resist is formed using photolithography, and the EL layer 103G on electrode 551G and the EL layer 103R on electrode 551R are removed by etching to process the material into a shape with sides (or with exposed sides), or a strip shape extending in a direction intersecting the paper plane. Specifically, dry etching is performed using the resist REG formed on the EL layer 103B overlapping electrode 551B (see Figure 5B). The partition wall 528 can be used as an etching stopper. In this embodiment, when patterning each EL layer by photolithography, known methods can be applied. That is, known resist materials suitable for organic materials can be used, and specifically, resist materials that dissolve in aqueous solvents can be used.

[0190] Next, as shown in Figure 5C, with the resist REG formed, an EL layer 103G (including an emissive layer 113G, an electron injection / transport layer 104G, and an oxidation-resistant layer 105G) is formed on the resist REG, electrode 551G, electrode 551R, and partition wall 528. For example, the EL layer 103G is formed using a vacuum deposition method to cover electrode 551G, electrode 551R, and partition wall 528. The oxidation-resistant layer 105G is formed using a composite material containing a metal oxide and an organic compound (hole transport material), similar to the oxidation-resistant layer 105B.

[0191] Next, as shown in Figure 6A, the EL layer 103G on electrode 551G is processed into a predetermined shape. For example, a resist is formed on the EL layer 103G using photolithography, and the EL layer 103G on electrode 551B and the EL layer 103G on electrode 551R are removed by etching to process it into a shape with sides (or with exposed sides), or a strip shape extending in a direction intersecting the paper plane. Specifically, dry etching is performed using the resist REG formed on the EL layer 103G overlapping electrode 551G. The partition wall 528 can be used as an etching stopper.

[0192] Next, as shown in Figure 6B, with the resist REG formed on electrodes 551B and 551G, an EL layer 103R (including an emissive layer 113R, an electron injection / transport layer 104R, and an oxidation-resistant layer 105R) is formed on the resist REG, electrode 551R, and partition wall 528. For example, the EL layer 103R is formed using a vacuum deposition method to cover electrode 551R, resist REG, and partition wall 528. The oxidation-resistant layer 105R is formed using a composite material containing a metal oxide and an organic compound (hole transport material), similar to the oxidation-resistant layer 105B.

[0193] Next, as shown in Figure 6C, the EL layer 103R on electrode 551R is processed into a predetermined shape. For example, a resist is formed on the EL layer 103R using photolithography, and the EL layer 103R on electrode 551B and the EL layer 103R on electrode 551G are removed to process it into a shape with sides (or with exposed sides), or a strip shape extending in a direction intersecting the paper plane. Specifically, dry etching is performed using the resist REG formed on the EL layer 103R overlapping electrode 551R. Note that the partition wall 528 can be used as an etching stopper.

[0194] As shown in Figures 5A, 5B, 5C, 6A, 6B, and 6C, it is preferable to first form the hole injection / transport layer 104B, the light-emitting layer 113B, and the electron transport layer 108B on electrode 551B, then form the hole injection / transport layer 104G, the light-emitting layer 113G, and the electron transport layer 108G on electrode 551G, and finally form the hole injection / transport layer 104R, the light-emitting layer 113R, and the electron transport layer 108R on electrode 551R.

[0195] In the process described above, when the hole injection / transport layer 104B, light-emitting layer 113B, and electron transport layer 108B on electrode 551G and the hole injection / transport layer 104B, light-emitting layer 113B, and electron transport layer 108B on electrode 551R are removed by etching, the surfaces of electrodes 551G and 551R are exposed to etching gas. Also, when the hole injection / transport layer 104G, light-emitting layer 113G, and electron transport layer 108G on electrode 551R are removed by etching, the surface of electrode 551 is exposed to etching gas. Therefore, the surface of electrode 551B is not exposed to etching gas, but the surface of electrode 551G is exposed to etching gas once, and the surface of electrode 551R is exposed to etching gas twice.

[0196] Exposure of the electrode surface to etching gas can cause damage to the electrode surface. Furthermore, using electrodes with damaged surfaces to form a light-emitting device can degrade the characteristics of the device. The degree to which the electrode surface condition affects the characteristics of the light-emitting device depends on the structure of the device and the materials used. Comparing light-emitting devices 550B, 550G, and 550R, the electrode surface condition may be the most influential factor in the characteristics of light-emitting device 550B.

[0197] In this case, by first forming the hole injection / transport layer 104B, the light-emitting layer 113B, and the electron transport layer 108B on the electrode 551B, it is possible to prevent the surface of the electrode 551B from being exposed to etching gas and to prevent deterioration of the characteristics of the light-emitting device 550B, which is most susceptible to the effects of the electrode surface condition.

[0198] Next, as shown in Figure 7A, a block layer 107 is formed on the oxidation-resistant layer 105B, oxidation-resistant layer 105G, oxidation-resistant layer 105R, and partition wall 528. For example, the block layer 107 is formed using a vacuum deposition method to cover the oxidation-resistant layer 105B, oxidation-resistant layer 105G, oxidation-resistant layer 105R, and partition wall 528. In this case, the block layer 107 is formed in contact with the side surfaces of each EL layer (103B, 103G, 103R), as shown in Figure 7A. This suppresses the intrusion of oxygen and moisture, or their constituent elements, into the interior from the side surfaces of each EL layer (103B, 103G, 103R). The electron-transporting material shown in Embodiment 1 can be used for the block layer 107. Here, the block layer 107 is provided between the electrode 551B and the EL layer 103B, and since it is formed using an electron-transporting material, it can also be considered as part of the EL layer 103B.

[0199] Next, as shown in Figure 7B, electrodes 552 are formed on the block layer 107. The electrodes 552 are formed, for example, using a vacuum deposition method. The electrodes 552 have a structure in which they are in contact with the sides of each EL layer (103B, 103G, 103R) via the block layer 107. This prevents electrical short circuits between each EL layer (103B, 103G, 103R) and the electrodes 552, or more specifically, between the electron injection / transport layers (104B, 104G, 104R) of each EL layer (103B, 103G, 103R) and the electrodes 552. However, since the block layer 107 is provided between the electrode 551B and the EL layer 103B, it is preferable that the first block layer 107-1 in contact with the EL layer be a layer with high electrical resistance made only of an electron-transporting material, and the second block layer 107-2 in contact with the electrode be a layer with low electrical resistance made by doping an electron-transporting material with metal ions or the like in a film, and that the laminated structure has at least these first block layer 107-1 and second block layer 107-2.

[0200] Through the above process, the EL layers 103B, 103G, and 103R of the light-emitting devices 550B, 550G, and 550R can be separated.

[0201] Furthermore, since the separation process of these EL layers (EL layer 103B, EL layer 103G, and EL layer 103R) is performed using photolithography to form patterns, a high-definition light-emitting device (display panel) can be manufactured. In addition, the edges of the EL layers processed by photolithography (the sides of the laminated structure constituting the EL layer) have a shape that is substantially the same surface (or is located substantially on the same plane).

[0202] In EL layers, the electron injection layer, particularly the electron transport region located between the cathode and the light-emitting layer, often has high conductivity. Therefore, if it is formed as a common layer for adjacent light-emitting devices, it can cause crosstalk. Consequently, by separating the EL layer using photolithography, as shown in this example configuration, it is possible to suppress the occurrence of crosstalk between adjacent light-emitting devices.

[0203] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices that do not use a metal mask or an FMM may be referred to as MML (Metal Maskless) structured devices.

[0204] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. Also, in this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display light-emitting device.

[0205] Furthermore, light-emitting devices can be broadly classified into single-structure and tandem-structure devices. In a single-structure device, it is preferable that there is one EL layer between a pair of electrodes, and that this EL layer includes one or more light-emitting layers. To obtain white light emission, it is sufficient to select light-emitting layers such that the light emitted from each of the two or more layers is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a configuration that emits white light as a whole can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0206] In a tandem device, it is preferable to have two or more EL layers between a pair of electrodes, and each EL layer includes one or more light-emitting layers. To obtain white light emission, the device should be configured such that the light from the light-emitting layers of multiple EL layers is combined to produce white light emission. The configuration for obtaining white light emission is the same as that for a single structure. In a tandem device, it is preferable to provide intermediate layers, such as charge-generating layers, between the multiple EL layers.

[0207] Furthermore, when comparing the aforementioned white light-emitting devices (single or tandem structure) with SBS structure light-emitting devices, SBS structure light-emitting devices can consume less power than white light-emitting devices. If you want to keep power consumption low, it is preferable to use SBS structure light-emitting devices. On the other hand, white light-emitting devices are preferable because their manufacturing process is simpler than that of SBS structure light-emitting devices, which can lead to lower manufacturing costs or higher manufacturing yields.

[0208] <Example of configuration of light-emitting device 700 2> The light-emitting device 700 shown in Figure 8 includes light-emitting devices 550B, 550G, 550R, and a partition wall 528. The light-emitting devices 550B, 550G, 550R, and the partition wall 528 are formed on a functional layer 520 provided on a first substrate 510. The functional layer 520 includes drive circuits GD and SD, each composed of multiple transistors, as well as wiring to electrically connect them. These drive circuits are electrically connected to the light-emitting devices 550B, 550G, and 550R, respectively, and can drive them.

[0209] Furthermore, the light-emitting devices 550B, 550G, and 550R have the device structure shown in Embodiment 1. In particular, Figure 2A shows a case where the EL layer 103 in the structure shown is different for each light-emitting device.

[0210] The specific configurations of each light-emitting device shown in Figure 8 are the same as those of light-emitting devices 550B, 550G, and 550R described in Figure 3.

[0211] As shown in Figure 8, there is a gap 580 between each light-emitting device, for example, between light-emitting device 550B and light-emitting device 550G. Therefore, the configuration includes forming an insulating layer 540 in this gap 580.

[0212] For example, by pattern formation using photolithography, the EL layer 103B (including hole injection / transport layer 104B and oxidation-resistant layer 105B), EL layer 103G (including hole injection / transport layer 104G and oxidation-resistant layer 105G), and EL layer 103R (including hole injection / transport layer 104R and oxidation-resistant layer 105R) can be separated and formed, and then an insulating layer 540 can be formed in the gap 580 on the partition wall 528 by pattern formation using photolithography. Furthermore, electrodes 552 can be formed on the EL layers (103B, 103G, 103R) and the insulating layer 540.

[0213] In this configuration, since each EL layer is separated by the insulating layer 540, the block layer shown in Configuration Example 1 (the laminated configuration of 107-1 and 107-2 in Figure 3) is not required.

[0214] Furthermore, since each EL layer in this configuration (EL layer 103B, EL layer 103G, and EL layer 103R) is patterned using photolithography during the separation process, the edges of the processed EL layers (the sides of the laminated structure constituting the EL layers) have a shape in which they have substantially the same surface (or are located substantially on the same plane).

[0215] In EL layers, the hole injection layer, particularly the hole transport region located between the anode and the light-emitting layer, often has high conductivity. Therefore, if it is formed as a common layer for adjacent light-emitting devices, it can cause crosstalk. Consequently, by separating the EL layer using photolithography, as shown in this example configuration, it is possible to suppress the occurrence of crosstalk between adjacent light-emitting devices.

[0216] <Example 3 of the configuration of the light-emitting device 700> The light-emitting device 700 shown in Figure 9A includes light-emitting devices 550B, 550G, 550R, and a partition wall 528. The light-emitting devices 550B, 550G, 550R, and the partition wall 528 are formed on a functional layer 520 provided on a first substrate 510. The functional layer 520 includes drive circuits GD and SD, each composed of multiple transistors, as well as wiring to electrically connect them. These drive circuits are electrically connected to the light-emitting devices 550B, 550G, and 550R, respectively, and can drive them.

[0217] Furthermore, the light-emitting devices 550B, 550G, and 550R have the device structure shown in Embodiment 1. In particular, the case in which each light-emitting device has in common an EL layer 103 having the structure shown in Figure 2B, a so-called tandem structure.

[0218] The light-emitting device 550B has an electrode 551B, an electrode 552, EL layers (103P, 103Q), a charge generation layer 106B, an oxidation-resistant layer 105B, and a block layer 107, and has the laminated structure shown in Figure 9A. The specific configuration of each layer is as shown in Embodiment 1. Also, electrodes 551B and 552 overlap. Furthermore, EL layers 103P and 103Q are laminated with the charge generation layer 106B in between, and EL layers 103P, 103Q, and 106B are located between electrodes 551B and 552. Note that EL layers 103P and 103Q have a laminated structure consisting of multiple layers with different functions, including light-emitting layers (113P, 113Q), similar to EL layers 103, 103a, 103b, and 103c described in Embodiment 1. Furthermore, the EL layer 103P can emit blue light, for example, and the EL layer 103Q can emit yellow light, for example.

[0219] In Figure 9A, only the light-emitting layer 113P and the electron injection / transport layer 104P are shown from the layers included in EL layer 103P, and only the light-emitting layer 113Q, the electron injection / transport layer 104Q, and the oxidation-resistant layer 105Q are shown from the layers included in EL layer 103Q. Therefore, in the following explanation, when it is possible to explain including the layers included in each EL layer, the EL layer (EL layer 103P, EL layer 103Q) will be used for convenience.

[0220] Furthermore, the block layer 107 is formed to cover the EL layer 103P, EL layer 103Q, and charge generation layer 106B, which are formed on the electrode 551B. As shown in Figure 9A, the EL layer 103P, EL layer 103Q, and charge generation layer 106B have sides (or edges). Therefore, the block layer 107 is formed in contact with the sides (or edges) of each of the EL layer 103P, EL layer 103Q, and charge generation layer 106B. This suppresses the intrusion of oxygen and moisture, or their constituent elements, into the interior from the sides of each of the EL layer 103P, EL layer 103Q, and charge generation layer 106B. The electron transport material shown in Embodiment 1 can be used for the block layer 107. Here, since the block layer 107 is provided between the electrode 551B and the EL layer 103B and is formed using an electron transport material, it can also be considered as a part of the EL layer 103B.

[0221] Furthermore, electrode 552 is formed on block layer 107. Note that electrode 551B and electrode 552 overlap. Also, EL layer 103P, EL layer 103Q, and charge generation layer 106B are located between electrode 551B and electrode 552. Therefore, electrode 552 has a structure in which it is in contact with the side surface (or edge) of EL layer 103P, EL layer 103Q, and charge generation layer 106B via block layer 107. This prevents electrical short circuits between EL layer 103P and electrode 552, more specifically between the electron injection / transport layer 104P of EL layer 103P and electrode 552, EL layer 103Q and electrode 552, more specifically between the electron injection / transport layer 104Q of EL layer 103Q and electrode 552, or between the charge generation layer 106B and electrode 552. However, since the block layer 107 is provided between the electrode 551B and the EL layer 103B, it is preferable that the first block layer 107-1 in contact with the EL layer be a layer with high electrical resistance made only of an electron-transporting material, and the second block layer 107-2 in contact with the electrode be a layer with low electrical resistance made by doping an electron-transporting material with metal ions or the like in a film, and that the laminated structure has at least these first block layer 107-1 and second block layer 107-2.

[0222] The light-emitting device 550G has an electrode 551G, an electrode 552, an EL layer (103P, 103Q (including the oxidation-resistant layer 105Q)), a charge generation layer 106G, an oxidation-resistant layer 105G, and a block layer 107, and has the laminated structure shown in Figure 9A. The specific configuration of each layer is as shown in Embodiment 1. Also, electrodes 551G and 552 overlap. Furthermore, EL layers 103P and 103Q are laminated with the charge generation layer 106G in between, and EL layers 103P, 103Q, and 106G are located between electrodes 551G and 552.

[0223] Furthermore, the block layer 107 is formed to cover the EL layer 103P, EL layer 103Q, and charge generation layer 106G formed on the electrode 551G. As shown in Figure 9A, the EL layer 103P, EL layer 103Q, and charge generation layer 106G have sides (or edges). Therefore, the block layer 107 is formed in contact with the sides (or edges) of each of the EL layer 103P, EL layer 103Q, and charge generation layer 106G. This suppresses the intrusion of oxygen and moisture, or their constituent elements, into the interior from the sides of each of the EL layer 103P, EL layer 103Q, and charge generation layer 106G. The electron transport material shown in Embodiment 1 can be used for the block layer 107. Here, since the block layer 107 is provided between the electrode 551B and the EL layer 103B and is formed using an electron transport material, it can also be considered as part of the EL layer 103B.

[0224] Furthermore, electrode 552 is formed on block layer 107. Note that electrode 551G and electrode 552 overlap. Also, EL layer 103P, EL layer 103Q, and charge generation layer 106G are located between electrode 551G and electrode 552. Therefore, electrode 552 has a structure in which it is in contact with the side surface (or edge) of EL layer 103P, EL layer 103Q, and charge generation layer 106G via block layer 107. This prevents electrical short circuits between EL layer 103P and electrode 552, more specifically between the electron injection / transport layer 104P of EL layer 103P and electrode 552, between EL layer 103Q and electrode 552, more specifically between the electron injection / transport layer 104Q of EL layer 103Q and electrode 552, or between the charge generation layer 106G and electrode 552. However, since the block layer 107 is provided between the electrode 551B and the EL layer 103B, it is preferable that the first block layer 107-1 in contact with the EL layer be a layer with high electrical resistance made only of an electron-transporting material, and the second block layer 107-2 in contact with the electrode be a layer with low electrical resistance made by doping an electron-transporting material with metal ions or the like in a film, and that the laminated structure has at least these first block layer 107-1 and second block layer 107-2.

[0225] The light-emitting device 550R has an electrode 551R, an electrode 552, EL layers (103P, 103Q), a charge generation layer 106R, an oxidation-resistant layer 105R, and a block layer 107, and has the laminated structure shown in Figure 9A. The specific configuration of each layer is as shown in Embodiment 1. Also, electrodes 551R and 552 overlap. Furthermore, EL layers 103P and 103Q are laminated with the charge generation layer 106R in between, and EL layers 103P, 103Q, and 106R are located between electrodes 551R and 552.

[0226] Furthermore, the block layer 107 is formed to cover the EL layer 103P, EL layer 103Q, and charge generation layer 106R, which are formed on the electrode 551R. As shown in Figure 9A, the EL layer 103P, EL layer 103Q, and charge generation layer 106R have sides (or edges). Therefore, the block layer 107 is formed in contact with the sides (or edges) of each of the EL layer 103P, EL layer 103Q, and charge generation layer 106R. This suppresses the intrusion of oxygen and moisture, or their constituent elements, into the interior from the sides of each of the EL layer 103P, EL layer 103Q, and charge generation layer 106R. The electron transport material shown in Embodiment 1 can be used for the block layer 107. Here, since the block layer 107 is provided between the electrode 551B and the EL layer 103B and is formed using an electron transport material, it can also be considered as part of the EL layer 103B.

[0227] Furthermore, electrode 552 is formed on block layer 107. Note that electrode 551R and electrode 552 overlap. Also, there are EL layers (103P, 103Q) and charge generation layer 106R between electrode 551R and electrode 552. Note that electrode 552 has a structure in which it is in contact with the side (or edge) of the EL layers (103P, 103Q) and charge generation layer 106R via block layer 107. This prevents electrical short circuits between EL layer 103P and electrode 552, more specifically between the electron injection / transport layer 104P of EL layer 103P and electrode 552, between EL layer 103Q and electrode 552, more specifically between the electron injection / transport layer 104Q of EL layer 103Q and electrode 552, or between the charge generation layer 106R and electrode 552. However, since the block layer 107 is provided between the electrode 551B and the EL layer 103B, it is preferable that the first block layer 107-1 in contact with the EL layer be a layer with high electrical resistance made only of an electron-transporting material, and the second block layer 107-2 in contact with the electrode be a layer with low electrical resistance made by doping an electron-transporting material with metal ions or the like in a film, and that the laminated structure has at least these first block layer 107-1 and second block layer 107-2.

[0228] Furthermore, when separating and processing the EL layers (103P, 103Q) and charge generation layer 106R of each light-emitting device, pattern formation is performed using photolithography, resulting in the edges of the processed EL layers (side surfaces of the laminated structure constituting the EL layers) having approximately the same surface (or being located on approximately the same plane).

[0229] Each light-emitting device has an EL layer (103P, 103Q) and a charge generation layer 106R, each with a gap 580 between them and adjacent light-emitting devices. The electron injection layer and charge generation layer 106R, which are included in the electron transport region of the EL layer (103P, 103Q), often have high conductivity, and if they are formed as layers common to adjacent light-emitting devices, they may cause crosstalk. Therefore, by providing a gap 580 as shown in this configuration example, it is possible to suppress the occurrence of crosstalk between adjacent light-emitting devices.

[0230] In a high-resolution light-emitting device (display panel) with a resolution exceeding 1000 ppi, if electrical conductivity is detected between the EL layer 103B, EL layer 103G, and EL layer 103R, a crosstalk phenomenon occurs, narrowing the color gamut that the light-emitting device can display. By providing a gap 580 in a high-resolution display panel exceeding 1000 ppi, preferably a high-resolution display panel exceeding 2000 ppi, and more preferably an ultra-high-resolution display panel exceeding 5000 ppi, a display panel capable of displaying vivid colors can be provided.

[0231] In this configuration example, the light-emitting devices 550B, 550G, and 550R all emit white light. Therefore, the second substrate 770 has a colored layer CFB, a colored layer CFG, and a colored layer CFR. These colored layers may be partially overlapped, as shown in Figure 9A. By partially overlapping them, the overlapped portion can function as a light-shielding film. In this configuration example, for example, the colored layer CFB uses a material that preferentially transmits blue light (B), the colored layer CFG uses a material that preferentially transmits green light (G), and the colored layer CFR uses a material that preferentially transmits red light (R).

[0232] Figure 9B shows the configuration of light-emitting device 550B when light-emitting devices 550B, 550G, and 550R are light-emitting devices that emit white light. EL layers 103P and 103Q are laminated on electrode 551B with a charge generation layer 106B in between. Furthermore, EL layer 103P has a light-emitting layer 113B that emits, for example, blue light EL(1), as a light-emitting layer 113P, and EL layer 103Q has a light-emitting layer 113G that emits green light EL(2) and a light-emitting layer 113R that emits red light EL(3).

[0233] Alternatively, a color conversion layer can be used instead of the colored layer described above. For example, nanoparticles, quantum dots, etc., can be used as the color conversion layer.

[0234] For example, instead of the colored layer CFG, a color conversion layer that converts blue light to green light can be used. This allows the blue light emitted by the light-emitting device 550G to be converted to green light. Alternatively, instead of the colored layer CFR, a color conversion layer that converts blue light to red light can be used. This allows the blue light emitted by the light-emitting device 550R to be converted to red light.

[0235] <Example of configuration of light-emitting device 700 4> The light-emitting device (display panel) 700 shown in Figure 10 includes light-emitting devices 550B, 550G, 550R, and a partition wall 528. The light-emitting devices 550B, 550G, 550R, and the partition wall 528 are formed on a functional layer 520 provided on a first substrate 510. The functional layer 520 includes drive circuits GD and SD, each composed of multiple transistors, as well as wiring to electrically connect them. These drive circuits are electrically connected to the light-emitting devices 550B, 550G, and 550R, enabling them to be driven.

[0236] Furthermore, the light-emitting devices 550B, 550G, and 550R have the device structure shown in Embodiment 1. This is particularly suitable when each light-emitting device has in common an EL layer (103P, 103Q) having the structure shown in Figure 2B, a so-called tandem structure.

[0237] The specific configurations of each light-emitting device shown in Figure 10 are the same as those of light-emitting devices 550B, 550G, and 550R described in Figure 9, and all of them emit white light.

[0238] Note that the light-emitting device shown in this example differs from the configuration of the light-emitting device shown in Figure 9 in that it has a colored layer CFB, a colored layer CFG, and a colored layer CFR formed on each light-emitting device formed on the first substrate 510.

[0239] Specifically, each light-emitting device formed on the first substrate 510 has a first insulating layer 573 on its electrode 552, and the first insulating layer 573 has a colored layer CFB, a colored layer CFG, and a colored layer CFR.

[0240] Furthermore, a second insulating layer 705 is provided on the colored layers CFB, CFG, and CFR. The second insulating layer 705 has a region sandwiched between the second substrate 770 and the colored layers (CFB, CFG, CFR) of the first substrate 510, which has a functional layer 520, each light-emitting device (550B, 550G, 550R), and the colored layers CFB, CFG, and CFR, and has the function of bonding the first substrate 510 and the second substrate 770.

[0241] Furthermore, the first insulating layer 573 and the second insulating layer 705 can be made of inorganic materials, organic materials, or composite materials of inorganic and organic materials, etc.

[0242] Furthermore, as inorganic materials, inorganic oxide films, inorganic nitride films, or inorganic oxidnitride films, or a laminated structure comprising multiple films selected from these, can be used. For example, films including silicon oxide films, silicon nitride films, silicon oxidnitride films, aluminum oxide films, or a laminated structure comprising multiple films selected from these can be used. Note that silicon nitride films are dense films and have excellent function in suppressing the diffusion of impurities. Alternatively, as an oxide semiconductor (for example, an IGZO film), a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used.

[0243] Furthermore, as organic materials, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, or acrylic, or laminated or composite materials of multiple resins selected from these, can be used. Alternatively, organic materials such as reaction-curing adhesives, photocuring adhesives, thermosetting adhesives, and / or anaerobic adhesives can be used.

[0244] <Example 2 of a manufacturing method for a light-emitting device> Next, the method for fabricating the light-emitting device shown in Figure 10 will be explained using Figures 11 and 12.

[0245] As shown in Figure 11A, an EL layer 103P (including an emissive layer 113P and an electron injection / transport layer 104P), a charge generation layer (106B, 106G, 106R), and an EL layer 103Q (including an emissive layer 113Q, an electron injection / transport layer 104Q, and an oxidation-resistant layer 105Q) are formed on the first substrate 510 to cover the electrodes (551B, 551G, 551R) and partition wall 528 (see Figure 4).

[0246] Furthermore, the oxidation-resistant layer 105Q included in the EL layer 103Q is formed using an oxidation-resistant material. Specifically, in Embodiment 1, a composite material can be used in which an electron acceptor material is added to an organic compound hole transport material, which was listed as a material that can be used for the charge generation layer of the EL layer, or a laminate of a hole transport material and an electron acceptor material can be used. In addition, as the electron acceptor material, the material listed as the organic acceptor material used for the hole injection layer in Embodiment 1 can be used. By using a metal oxide as the electron acceptor material, oxidation resistance can be improved.

[0247] Examples of metal oxides include oxides of metals belonging to groups 4 through 8 of the periodic table. Specifically, these include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. Furthermore, as organic compounds, materials listed as hole transport materials can be used.

[0248] Furthermore, by setting the composition of the metal oxide and organic compound contained in the oxidation-resistant layer 105 to a predetermined value, it is possible to suppress the dissolution of the oxidation-resistant layer 105 when a resist is formed on the oxidation-resistant layer 105 in a subsequent process. Regarding the composition of the metal oxide and organic compound used in the oxidation-resistant layer 105, it is preferable that the weight of the organic compound be 1 / 100 to 100 times the weight of the metal oxide, and more preferably 1 / 20 to 20 times, taking into account the film thickness and transmittance of the oxidation-resistant layer 105.

[0249] Next, as shown in Figure 11B, the EL layer 103P (including the light-emitting layer 113P and the electron injection / transport layer 104P), the charge generation layer 106, and the EL layer 103Q (including the light-emitting layer 113Q, the electron injection / transport layer 104Q, and the oxidation-resistant layer 105Q) on the electrodes (551B, 551G, 551R) are processed into a predetermined shape. For example, a resist REG is formed on the EL layer 103Q (including the light-emitting layer 113Q, electron injection / transport layer 104Q, and oxidation-resistant layer 105Q) on the electrodes (551B, 551G, 551R) using photolithography. By etching, the EL layer 103P (including the light-emitting layer 113P and electron injection / transport layer 104P), the charge generation layer 106, and the EL layer 103Q (including the light-emitting layer 113Q, electron injection / transport layer 104Q, and oxidation-resistant layer 105Q), on which no resist REG is formed on top, are removed to process the material into a shape with sides (or with exposed sides) or a strip shape extending in a direction intersecting the paper plane. Specifically, dry etching is performed using the resist REG formed on the EL layer 103Q (including the light-emitting layer 113Q, electron injection / transport layer 104Q, and oxidation-resistant layer 105Q) (see Figure 11C). The partition wall 528 can be used as an etching stopper.

[0250] As described above, the EL layer 103P (including the light-emitting layer 113P and the electron injection / transport layer 104P), the charge generation layer (106B, 106G, 106R), and the EL layer 103Q (including the light-emitting layer 113Q, the electron injection / transport layer 104Q, and the oxidation-resistant layer 105Q) of the light-emitting devices 550B, 550G, and 550R can be formed separately in a single photolithography pattern formation.

[0251] Next, as shown in Figure 12A, an EL layer 103P (including an emissive layer 113P and an electron injection / transport layer 104P), a charge generation layer (106B, 106G, 106R), and an EL layer 103Q (including an emissive layer 113Q, an electron injection / transport layer 104Q, and an oxidation-resistant layer 105Q) are formed, along with a block layer 107 and an electrode 552 on the partition wall 528. For example, the block layer 107 and the electrode 552 are formed using a vacuum deposition method.

[0252] As the material used for the block layer 107, the electron-transporting material described in Embodiment 1 can be used. Here, the block layer 107 is provided between the electrode 551B and the EL layer 103P, and since it is formed using an electron-transporting material, it can also be considered as a part of the EL layer 103P.

[0253] Furthermore, the block layer 107 is also formed on the exposed sides when the EL layer 103P (including the light-emitting layer 113P and the electron injection / transport layer 104P), the charge generation layers (106B, 106G, 106R), and the EL layer 103P (including the light-emitting layer 113Q, the electron injection / transport layer 104P, and the oxidation-resistant layer 105) are etched.

[0254] Furthermore, the electrode 552 is formed on the block layer 107. The electrode 552 has a structure in which it is in contact with the sides of the EL layer 103P (including the light-emitting layer 113P and the electron injection / transport layer 104P), the charge generation layers (106B, 106G, 106R), and the EL layer 103Q (including the light-emitting layer 113Q, the electron injection / transport layer 104Q, and the oxidation-resistant layer 105Q) via the block layer 107. This prevents electrical short circuits between the EL layer 103P and the electrode 552, more specifically between the electron injection / transport layer 104P of the EL layer 103P and the electrode 552, between the EL layer 103Q and the electrode 552, more specifically between the electron injection / transport layer 104Q of the EL layer 103Q and the electrode 552, or between the charge generation layer 106R and the electrode 552. However, since the block layer 107 is provided between the electrode 551B and the EL layer 103B, it is preferable that the first block layer 107-1 in contact with the EL layer be a layer with high electrical resistance made only of an electron-transporting material, and the second block layer 107-2 in contact with the electrode be a layer with low electrical resistance made by doping an electron-transporting material with metal ions or the like in a film, and that the laminated structure has at least these first block layer 107-1 and second block layer 107-2.

[0255] Next, insulating film 573, colored layer CFB, colored layer CFG, colored layer CFR, and insulating film 705 are formed (see Figure 12B).

[0256] For example, an insulating film 573 is formed by laminating a flat film and a dense film. Specifically, a flat film is formed using a coating method, and a dense film is laminated on the flat film using a chemical vapor deposition method or an atomic layer deposition method (ALD: Atomic Layer Deposition). As a result, a high-quality insulating film 573 with few defects can be formed.

[0257] For example, a color resist is used to form a colored layer CFB, a colored layer CFG, and a colored layer CFR into a predetermined shape. Note that, on the partition wall 528, the colored layer CFR and the colored layer CFB are processed so as to overlap. As a result, it is possible to suppress the phenomenon that the light emitted from adjacent light-emitting devices leaks out.

[0258] The insulating layer 705 can be made of an inorganic material, an organic material, a composite material of an inorganic material and an organic material, or the like.

[0259] In addition, when separating the EL layers (103P, 103Q) and the charge generation layer 106R, which each light-emitting device has, for each light-emitting device, since pattern formation is performed by photolithography, a high-definition light-emitting device (display panel) can be manufactured. Further, the end portions of the EL layer (the side surfaces of the laminated structure constituting the EL layer) processed by pattern formation by photolithography have a shape having substantially the same surface (or are located on substantially the same plane).

[0260] Also, since the electron injection layer and the charge generation layers (106B, 106G, 106R) included in the electron transport region in the EL layers (103P, 103Q) often have a high conductivity, if they are formed as a layer common to adjacent light-emitting devices, it may cause crosstalk. Therefore, as shown in this configuration example, by separating the EL layer by pattern formation by photolithography, it is possible to suppress the occurrence of crosstalk between adjacent light-emitting devices.

[0261] <Configuration Example 5 of the Light-Emitting Device 700> The light-emitting device (display panel) 700 shown in Figure 13 includes light-emitting devices 550B, 550G, 550R, and a partition wall 528. The light-emitting devices 550B, 550G, 550R, and the partition wall 528 are formed on a functional layer 520 provided on a first substrate 510. The functional layer 520 includes drive circuits GD and SD, composed of multiple transistors, as well as wiring to electrically connect them. These drive circuits are electrically connected to the light-emitting devices 550B, 550G, and 550R, enabling them to be driven.

[0262] Furthermore, the light-emitting devices 550B, 550G, and 550R have the device structure shown in Embodiment 1. This is particularly suitable when each light-emitting device has in common an EL layer 103 having the structure shown in Figure 2B, a so-called tandem structure.

[0263] As shown in Figure 13, there is a gap 580 between each light-emitting device, for example, between light-emitting device 550B and light-emitting device 550G. Therefore, the configuration includes forming an insulating layer 540 in this gap 580.

[0264] For example, by pattern formation using photolithography, the EL layer 103P (including the light-emitting layer 113P and the electron injection / transport layer 104P), the charge generation layer (106B, 106G, 106R), and the EL layer 103Q (including the light-emitting layer 113Q, the electron injection / transport layer 104Q, and the oxidation-resistant layer 105Q) can be separated and formed, and then an insulating layer 540 can be formed in the gap 580 on the partition wall 528 using photolithography. Furthermore, electrodes 552 can be formed on the EL layer 103Q (including the light-emitting layer 113Q, the electron injection / transport layer 104Q, and the oxidation-resistant layer 105Q) and the insulating layer 540.

[0265] In this configuration, since each EL layer is separated by the insulating layer 540, the block layer shown in Configuration Example 3 (107 in Figure 9) is unnecessary.

[0266] Furthermore, when separating and processing the EL layers (103P, 103Q) and charge generation layer 106R of each light-emitting device, pattern formation is performed using photolithography, making it possible to manufacture high-resolution light-emitting devices (display panels). In addition, the edges of the EL layers processed by pattern formation using photolithography (the side surfaces of the laminated structure constituting the EL layers) have a shape that is approximately the same surface (or is located on approximately the same plane).

[0267] Furthermore, the electron injection layer and charge generation layer (106B, 106G, 106R) included in the electron transport region of the EL layer (103P, 103Q) often have high conductivity. Therefore, if they are formed as layers common to adjacent light-emitting devices, they can cause crosstalk. Accordingly, as shown in this example configuration, separating the EL layer by pattern formation using photolithography makes it possible to suppress the occurrence of crosstalk between adjacent light-emitting devices.

[0268] The configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments.

[0269] (Embodiment 3) In this embodiment, a light-emitting device, which is one aspect of the present invention, will be described with reference to Figures 14A to 16B. The light-emitting device 700 shown in Figures 14A to 16B has the light-emitting device shown in Embodiment 1. Furthermore, the light-emitting device 700 described in this embodiment can also be called a display panel because it is applicable to the display section of electronic devices and the like.

[0270] As shown in Figure 14A, the light-emitting device 700 described in this embodiment includes a display area 231, the display area 231 having a pair of pixels 703(i,j). Furthermore, as shown in Figure 14B, there is a pair of pixels 703(i+1,j) adjacent to the pair of pixels 703(i,j).

[0271] Note that pixel 703(i,j) can contain multiple pixels. For example, multiple pixels displaying colors with different hues can be used. Each of these multiple pixels can be referred to as a subpixel. Alternatively, multiple subpixels can be grouped together and referred to as a single pixel.

[0272] This allows for additive or subtractive color mixing of the colors displayed by the multiple pixels. Alternatively, it enables the display of hues that cannot be displayed by individual pixels.

[0273] Specifically, the pixel 702B(i,j) that displays blue, the pixel 702G(i,j) that displays green, and the pixel 702R(i,j) that displays red can be used as the pixel 703(i,j). In addition, pixels 702B(i,j), 702G(i,j), and 702R(i,j) can each be referred to as subpixels.

[0274] Additionally, a pixel displaying white or the like may be used in pixel 703(i,j) in addition to the above pair. Furthermore, a pixel displaying cyan, a pixel displaying magenta, and a pixel displaying yellow may each be used as a sub-pixel in pixel 703(i,j).

[0275] In addition to the above pair, a pixel that emits infrared light may be used for pixel 703(i,j). Specifically, a pixel that emits light including light with a wavelength of 650 nm to 1000 nm can be used for pixel 703(i,j).

[0276] The display area 231 shown in Figure 14A is surrounded by a drive circuit GD and a drive circuit SD. It also has terminals 519 that are electrically connected to the drive circuits GD and SD. Terminals 519 can be electrically connected, for example, to a flexible printed circuit FPC1 (see Figure 16).

[0277] The driving circuit GD has a function of supplying a first selection signal and a second selection signal. For example, the driving circuit GD is electrically connected to a conductive film G1(i) described later and supplies the first selection signal, and is electrically connected to a conductive film G2(i) described later and supplies the second selection signal. Further, the driving circuit SD has a function of supplying an image signal and a control signal, and the control signal includes a first level and a second level. For example, the driving circuit SD is electrically connected to a conductive film S1g(j) described later and supplies the image signal, and is electrically connected to a conductive film S2g(j) described later and supplies the control signal.

[0278] Also, as shown in FIG. 16A, the light-emitting device 700 has a functional layer 520 between a first substrate 510 and a second substrate 770. The functional layer 520 includes, in addition to the driving circuit GD, the driving circuit SD, etc. described above, wirings for electrically connecting them, and the like. In FIG. 16A, the functional layer 520 shows a configuration including pixel circuits 530B(i,j), pixel circuits 530G(i,j), and a driving circuit GD, but is not limited thereto.

[0279] Each pixel circuit (for example, the pixel circuit 530B(i,j) and the pixel circuit 530G(i,j) shown in FIG. 16A) included in the functional layer 520 is electrically connected to each light-emitting device (for example, the light-emitting device 550B(i,j) and the light-emitting device 550G(i,j) shown in FIG. 16A) formed on the functional layer 520. An insulating layer 705 is provided on the functional layer 520 and each light-emitting device, and the insulating layer 705 has a function of bonding the second substrate 770 and the functional layer 520.

[0280] Note that a substrate provided with a touch sensor in a matrix form can be used as the second substrate 770. For example, a substrate provided with a capacitive touch sensor or an optical touch sensor can be used as the second substrate 770. Thereby, the light-emitting device according to one aspect of the present invention can be used as a touch panel.

[0281] The specific configuration of the pixel circuit 530G(i,j) is shown in FIG. 15A.

[0282] As shown in Figure 15A, the pixel circuit 530G(i,j) has switch SW21, switch SW22, transistor M21, capacitor C21, and node N21. The pixel circuit 530G(i,j) also has node N22, capacitor C22, and switch SW23.

[0283] Transistor M21 has a gate electrode electrically connected to node N21, a first electrode electrically connected to light-emitting device 550G(i,j), and a second electrode electrically connected to conductive film ANO.

[0284] Switch SW21 has a first terminal electrically connected to node N21 and a second terminal electrically connected to conductive film S1g(j), and has the function of controlling a conduction state or a non-conduction state based on the potential of conductive film G1(i).

[0285] The switch SW22 has a first terminal electrically connected to the conductive film S2g(j), and has the function of controlling the conduction state or non-conduction state based on the potential of the conductive film G2(i).

[0286] Capacitor C21 has a conductive film electrically connected to node N21 and a conductive film electrically connected to the second electrode of switch SW22.

[0287] This allows the image signal to be stored in node N21. Alternatively, the potential of node N21 can be changed using switch SW22. Or, the intensity of the light emitted by the light-emitting device 550G(i,j) can be controlled using the potential of node N21.

[0288] Next, Figure 15B shows an example of the specific structure of transistor M21, as explained in Figure 15A. Note that, as appropriate, a bottom-gate transistor or a top-gate transistor can be used as transistor M21.

[0289] The transistor shown in Figure 15B has a semiconductor film 508, a conductive film 504, an insulating film 506, a conductive film 512A, and a conductive film 512B. The transistor is formed, for example, on an insulating film 501C.

[0290] The semiconductor film 508 has a region 508A that is electrically connected to the conductive film 512A, and a region 508B that is electrically connected to the conductive film 512B. The semiconductor film 508 has a region 508C between regions 508A and 508B.

[0291] The conductive film 504 has a region that overlaps with region 508C, and the conductive film 504 has the function of a gate electrode.

[0292] The insulating film 506 has a region sandwiched between the semiconductor film 508 and the conductive film 504. The insulating film 506 functions as a gate insulating film.

[0293] The conductive film 512A has either the function of a source electrode or the function of a drain electrode, and the conductive film 512B has either the function of a source electrode or the function of a drain electrode.

[0294] Furthermore, the conductive film 524 can be used in a transistor. The conductive film 524 has a region in which the semiconductor film 508 is sandwiched between it and the conductive film 504. The conductive film 524 functions as a second gate electrode. The insulating film 501D is sandwiched between the semiconductor film 508 and the conductive film 524 and functions as a second gate insulating film.

[0295] Furthermore, in the process of forming the semiconductor film used for the transistors in the pixel circuit, the semiconductor film used for the transistors in the drive circuit can also be formed. For example, a semiconductor film with the same composition as the semiconductor film used for the transistors in the pixel circuit can be used in the drive circuit.

[0296] Furthermore, the semiconductor film 508 can be made of a semiconductor containing elements of Group 14. Specifically, a semiconductor containing silicon can be used for the semiconductor film 508.

[0297] Furthermore, hydrogenated amorphous silicon can be used for the semiconductor film 508. Alternatively, microcrystalline silicon or the like can be used for the semiconductor film 508. This makes it possible to provide a light-emitting device (or display panel) with less display unevenness than, for example, a light-emitting device (or display panel) that uses polysilicon for the semiconductor film 508. Alternatively, it is easier to scale up the light-emitting device.

[0298] Furthermore, polysilicon can be used for the semiconductor film 508. This allows for, for example, a higher field-effect mobility of the transistor compared to a transistor using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, for example, the driving capability can be increased compared to a transistor using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, for example, the aperture ratio of the pixels can be improved compared to a transistor using hydrogenated amorphous silicon for the semiconductor film 508.

[0299] Alternatively, for example, the reliability of the transistor can be improved compared to a transistor using hydrogenated amorphous silicon as the semiconductor film 508.

[0300] Alternatively, the temperature required for transistor fabrication can be lowered compared to, for example, transistors using single-crystal silicon.

[0301] Alternatively, the semiconductor film used for the transistors in the drive circuit can be formed using the same process as the semiconductor film used for the transistors in the pixel circuit. Alternatively, the drive circuit can be formed on the same substrate as the substrate on which the pixel circuit is formed. Alternatively, the number of components constituting the electronic device can be reduced.

[0302] Furthermore, single-crystal silicon can be used for the semiconductor film 508. This allows for higher resolution than, for example, a light-emitting device (or display panel) that uses hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, it is possible to provide a light-emitting device with less display unevenness than a light-emitting device that uses polysilicon for the semiconductor film 508. Alternatively, for example, smart glasses or a head-mounted display can be provided.

[0303] Furthermore, a metal oxide can be used for the semiconductor film 508. This allows the pixel circuit to hold the image signal for a longer time compared to a pixel circuit using a transistor with a hydrogenated amorphous silicon semiconductor film. Specifically, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute, while suppressing the occurrence of flicker. As a result, fatigue accumulated in the user of the electronic device can be reduced. In addition, power consumption associated with operation can be reduced.

[0304] Furthermore, an oxide semiconductor can be used for the semiconductor film 508. Specifically, an oxide semiconductor containing indium, an oxide semiconductor containing indium, gallium, and zinc, or an oxide semiconductor containing indium, gallium, zinc, and tin can be used for the semiconductor film 508.

[0305] Furthermore, by using an oxide semiconductor as the semiconductor film, it is possible to obtain a transistor with a smaller leakage current in the off state than a transistor using hydrogenated amorphous silicon as the semiconductor film. Therefore, it is preferable to use a transistor using an oxide semiconductor as the semiconductor film for switches and the like. Moreover, a circuit using a transistor with an oxide semiconductor as the semiconductor film as a switch can maintain the potential of the floating node for a longer time than a circuit using a transistor with hydrogenated amorphous silicon as the semiconductor film as a switch.

[0306] Figure 16A shows a light-emitting device with a structure that extracts light from the second substrate 770 side (top emission type), but as shown in Figure 16B, a light-emitting device with a structure that extracts light from the first substrate 510 side (bottom emission type) may also be used. In the case of a bottom emission type light-emitting device, the first electrode is formed to function as a semi-transparent / semi-reflective electrode, and the second electrode is formed to function as a reflective electrode.

[0307] Furthermore, although Figures 16A and 16B describe an active matrix type light-emitting device, the configuration of the light-emitting device shown in Embodiment 1 may also be applied to the passive matrix type light-emitting device shown in Figures 17A and 17B.

[0308] Figure 17A is a perspective view showing a passive matrix type light-emitting device, and Figure 17B is a cross-sectional view of Figure 17A cut along the X and Y lines. In Figure 17, an EL layer 955 is provided on the substrate 951 between electrodes 952 and 956. The ends of electrodes 952 are covered with an insulating layer 953. A partition layer 954 is provided on the insulating layer 953. The side walls of the partition layer 954 have a slope such that the distance between one side wall and the other side wall narrows as it approaches the substrate surface. In other words, the cross-section of the partition layer 954 in the short axis direction is trapezoidal, with the lower base (the side in contact with the insulating layer 953) being shorter than the upper base. By providing the partition layer 954 in this way, defects in the light-emitting device caused by static electricity and the like can be prevented.

[0309] The configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments.

[0310] (Embodiment 4) In this embodiment, the configuration of an electronic device according to one aspect of the present invention will be explained with reference to Figures 18A to 20B.

[0311] Figures 18A to 20B illustrate the configuration of an electronic device according to one embodiment of the present invention. Figure 18A is a block diagram of the electronic device, and Figures 18B to 18E are perspective views illustrating the configuration of the electronic device. Figures 19A to 19E are perspective views illustrating the configuration of the electronic device. Figures 20A and 20B are perspective views illustrating the configuration of the electronic device.

[0312] The electronic device 5200B described in this embodiment includes a computing device 5210 and an input / output device 5220 (see Figure 18A).

[0313] The arithmetic unit 5210 has a function to receive operation information and a function to supply image information based on the operation information.

[0314] The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 5290, a function for supplying operation information, and a function for supplying image information. Furthermore, the input / output device 5220 also includes a function for supplying detection information, a function for supplying communication information, and a function for receiving communication information.

[0315] The input unit 5240 has the function of supplying operation information. For example, the input unit 5240 supplies operation information based on the operation of the user of the electronic device 5200B.

[0316] Specifically, the input unit 5240 can use a keyboard, hardware buttons, pointing device, touch sensor, illuminance sensor, imaging device, voice input device, eye-tracking device, posture detection device, etc.

[0317] The display unit 5230 has the function of displaying a display panel and image information. For example, the display panel described in Embodiment 2 can be used in the display unit 5230.

[0318] The detection unit 5250 has the function of supplying detection information. For example, it has the function of detecting the surrounding environment in which electronic equipment is being used and supplying it as detection information.

[0319] Specifically, illuminance sensors, imaging devices, posture detection devices, pressure sensors, and human presence sensors can be used in the detection unit 5250.

[0320] The communication unit 5290 has functions for receiving and supplying communication information. For example, it has functions for connecting with other electronic devices or communication networks via wireless or wired communication. Specifically, it has functions such as wireless local area communication, telephone communication, and short-range wireless communication.

[0321] Figure 18B shows an electronic device having an external shape that follows a cylindrical column or the like. One example is digital signage. A display panel, which is one aspect of the present invention, can be applied to the display unit 5230. It may also have a function to change the display method according to the illumination of the usage environment. It may also have a function to change the display content when a person is detected. This allows it to be installed, for example, on a building column, or to display advertisements or information.

[0322] Figure 18C shows an electronic device that has the function of generating image information based on the trajectory of a pointer used by the user. Examples include electronic whiteboards, electronic bulletin boards, and electronic signboards. Specifically, a display panel with a diagonal length of 20 inches or more, preferably 40 inches or more, and more preferably 55 inches or more can be used. Alternatively, multiple display panels can be arranged to form a single display area. Alternatively, multiple display panels can be arranged to form a multi-screen.

[0323] Figure 18D shows an electronic device that functions as a wristwatch-type portable information terminal, capable of receiving information from other devices and displaying it on the display unit 5230. One example is a smartwatch (registered trademark). Specifically, it can display several options, or the user can select several options and send them back to the information sender. Alternatively, it may have a function to change the display method according to the illumination of the usage environment. This can, for example, reduce the power consumption of the smartwatch. Alternatively, it may be possible to display images on the smartwatch so that it can be used suitably even in environments with strong ambient light, such as outdoors on a sunny day.

[0324] Figure 18E shows an electronic device having a display unit 5230 with a curved surface that gently curves along the side of the housing. One example is a mobile phone. The display unit 5230 includes a display panel, which has the function of displaying on, for example, the front, side, top, and back. This allows information to be displayed not only on the front of the mobile phone, but also on the sides, top, and back.

[0325] Figure 19A shows an electronic device that can receive information from the internet and display it on the display unit 5230. One example is a smartphone. For example, a message that has been created can be viewed on the display unit 5230. Alternatively, a message that has been created can be sent to another device. Alternatively, for example, it has a function to change the display method according to the illumination of the usage environment. This can reduce the power consumption of the smartphone. Alternatively, for example, an image can be displayed on the display unit 5230 so that it can be used suitably even in environments with strong ambient light, such as outdoors on a sunny day.

[0326] Figure 19B shows an electronic device in which a remote controller can be used as the input unit 5240. One example is a television system. For example, it can receive information from a broadcasting station or the internet and display it on the display unit 5230. Alternatively, it can photograph the user using the detection unit 5250. Alternatively, it can transmit the user's video. Alternatively, it can acquire the user's viewing history and provide it to a cloud service. Alternatively, it can acquire recommendation information from a cloud service and display it on the display unit 5230. Alternatively, it can display a program or video based on the recommendation information. Alternatively, for example, it has a function to change the display method according to the illumination of the usage environment. This allows the video to be displayed on the display unit 5230 so that it can be used effectively even when strong sunlight shines into the room on a sunny day.

[0327] Figure 19C shows an electronic device that can receive educational materials from the internet and display them on the display unit 5230. An example of such a device is a tablet computer. Using the input unit 5240, reports can be entered and sent to the internet. Alternatively, the correction results or evaluations of reports can be obtained from a cloud service and displayed on the display unit 5230. Or, based on the evaluation, suitable educational materials can be selected and displayed.

[0328] For example, the display unit 5230 can receive image signals from other electronic devices and display them. Alternatively, it can be propped up on a stand or the like and used as a sub-display. This allows images to be displayed on the tablet computer in a way that is suitable for use even in environments with strong ambient light, such as outdoors on a sunny day.

[0329] Figure 19D shows an electronic device having multiple display units 5230. One example is a digital camera. For example, the detection unit 5250 can capture images while displaying them on the display unit 5230. Alternatively, captured images can be displayed on the display unit 5230. Alternatively, the input unit 5240 can be used to add embellishments to the captured images. Alternatively, messages can be attached to the captured images. Alternatively, the images can be transmitted to the internet. Alternatively, the device has a function to change the shooting conditions according to the illumination of the environment in which they are used. This allows the subject to be displayed on the display unit 5230 so that it can be viewed favorably even in environments with strong ambient light, such as outdoors on a sunny day.

[0330] Figure 19E shows an electronic device that can control other electronic devices by using the electronic device of this embodiment as a master and using other electronic devices as slaves. One example is a portable personal computer. For example, part of the image information can be displayed on the display unit 5230 and the other part of the image information can be displayed on the display unit of the other electronic device. Alternatively, an image signal can be supplied. Alternatively, information to be written can be obtained from the input unit of the other electronic device using the communication unit 5290. This allows for the use of a wide display area, for example, with a portable personal computer.

[0331] Figure 20A shows an electronic device having a detection unit 5250 that detects acceleration or direction. An example is a goggle-type electronic device. The detection unit 5250 can supply information relating to the user's position or the direction the user is facing. Alternatively, the electronic device can generate image information for the right eye and image information for the left eye based on the user's position or the direction the user is facing. Alternatively, the display unit 5230 has a display area for the right eye and a display area for the left eye. This allows, for example, the display unit 5230 to display images of an immersive virtual reality space.

[0332] Figure 20B shows an electronic device having an imaging device and a detection unit 5250 that detects acceleration or orientation. One example is a glasses-type electronic device. The detection unit 5250 can supply information relating to the user's position or the direction the user is facing. Alternatively, the electronic device can generate image information based on the user's position or the direction the user is facing. This allows, for example, information to be attached to and displayed on a real-world landscape. Alternatively, images of an augmented reality space can be displayed on the glasses-type electronic device.

[0333] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0334] (Embodiment 5) In this embodiment, a configuration in which the light-emitting device described in Embodiment 2 is used as an illumination device will be explained with reference to Figure 21. Figure 21A is a cross-sectional view of ef in the top view of the illumination device shown in Figure 21B.

[0335] In this embodiment, the lighting device has a first electrode 401 formed on a translucent substrate 400 which serves as a support. The first electrode 401 corresponds to the first electrode 101 in Embodiment 1. When light is extracted from the first electrode 401 side, the first electrode 401 is formed from a translucent material.

[0336] A pad 412 for supplying voltage to the second electrode 404 is formed on the substrate 400.

[0337] An EL layer 403 is formed on the first electrode 401. The EL layer 403 corresponds to the configuration of the EL layer 103 in Embodiment 1, or a configuration combining EL layers 103a, 103b, 103c and charge generation layer 106 (106a, 106b). For details on these configurations, please refer to the relevant description.

[0338] A second electrode 404 is formed by covering the EL layer 403. The second electrode 404 corresponds to the second electrode 102 in Embodiment 1. When light emission is extracted from the first electrode 401 side, the second electrode 404 is formed of a material with high reflectivity. Voltage is supplied to the second electrode 404 by connecting it to the pad 412.

[0339] As described above, the lighting device shown in this embodiment has a light-emitting device having a first electrode 401, an EL layer 403, and a second electrode 404. Since this light-emitting device is a light-emitting device with high luminous efficiency, the lighting device in this embodiment can be a lighting device with low power consumption.

[0340] The lighting device is completed by fixing and sealing the substrate 400, on which the light-emitting device having the above configuration is formed, and the sealing substrate 407 using sealing materials 405 and 406. Either sealing material 405 or 406 may be used. In addition, a desiccant can be mixed into the inner sealing material 406 (not shown in Figure 21B), which allows for the adsorption of moisture and leads to improved reliability.

[0341] Furthermore, by extending the pad 412 and a portion of the first electrode 401 outside the sealing materials 405 and 406, it can be used as an external input terminal. Alternatively, an IC chip 420 with a converter or the like may be placed on top of it.

[0342] (Embodiment 6) In this embodiment, an example of an application of a lighting device manufactured by applying a light-emitting device, or a light-emitting device which is a part thereof, according to one aspect of the present invention, will be explained with reference to Figure 22.

[0343] For indoor lighting, it can be used as a ceiling light 8001. The ceiling light 8001 is available in both surface-mounted and recessed ceiling types. Such lighting devices are constructed by combining a light-emitting device with a housing or cover. It can also be used as a cord pendant type (suspended from the ceiling by a cord).

[0344] Furthermore, the 8002 footlight illuminates the floor surface, enhancing safety underfoot. For example, it is effective for use in bedrooms, stairwells, and corridors. In such cases, the size and shape can be appropriately changed according to the size and structure of the room. It can also be configured as a freestanding lighting device consisting of a light-emitting device and a support base.

[0345] Furthermore, the sheet-type lighting 8003 is a thin, sheet-shaped lighting device. Because it is attached to a wall surface, it does not take up much space and can be used in a wide range of applications. It can also be easily made to cover a large area. It can also be used on curved walls and enclosures.

[0346] Alternatively, a lighting device 8004 can be used in which the light from the light source is controlled to flow only in a desired direction.

[0347] Furthermore, the desk lamp 8005 has a light source 8006, and as the light source 8006, a light-emitting device that is a part of the present invention or a light-emitting device that is a part thereof can be applied.

[0348] In addition to the above, by applying a light-emitting device, or a light-emitting device that is a part thereof, according to one aspect of the present invention, to a part of the furniture installed in the room, it is possible to create a lighting device that also functions as furniture.

[0349] As described above, various lighting devices can be obtained by applying a light-emitting device. These lighting devices are included in one aspect of the present invention.

[0350] Furthermore, the configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments. [Explanation of Symbols]

[0351] 100: Light-emitting device, 101: First electrode, 102: Second electrode, 103, 103a, 103b, 103c: EL layer, 103B, 103G, 103R: EL layer, 103P, 103Q: EL layer, 104, 104a, 104b: Electron injection / transport layer, 104B, 104G, 104R: Electron injection / transport layer, 104P, 104Q: Hole injection / transport layer, 105, 105B, 105G, 105R: Oxidation-resistant layer, 106, 106B, 106G, 106R: Charge generation layer, 107: Blocking layer, 107-1: First blocking layer, 107 -2: Second block layer, 107-3: Second block layer, 111, 111a, 111b: Hole injection layer, 112, 112a, 112b: Hole transport layer, 113, 113a, 113b, 113c: Light-emitting layer, 114, 114b: Electron transport layer, 115, 115b: Electron injection layer, 231: Display area, 400: Substrate, 401: First electrode, 403: EL layer, 404: Second electrode, 405, 406: Sealing material, 407: Encapsulation substrate, 412: Pad, 420: IC chip, 501C: Insulating film, 501D: Insulating film, 504: Conductive film, 50 6: Insulating film, 508: Semiconductor film, 508A: Region, 508B: Region, 508C: Region, 510: Substrate, 512A: Conductive film, 512B: Conductive film, 519: Terminal, 520: Functional layer, 524: Conductive film, 528: Partition, 528B: Aperture, 528G: Aperture, 528R: Aperture, 530B: Pixel circuit, 530G: Pixel circuit, 540: Insulating layer, 550B: Light-emitting device, 550G: Light-emitting device, 550R: Light-emitting device, 551B: Electrode, 551G: Electrode, 551R: Electrode, 552: Electrode, 573: Insulating layer, 580: Gap 700: Light-emitting device, 702B: Pixel, 702G: Pixel, 702R: Pixel, 703: Pixel, 705: Insulating layer, 770: Substrate, 951: Substrate, 952: Electrode, 953: Insulating layer, 954: Partition layer, 955: EL layer, 956: Electrode, 5200B: Electronic equipment, 5210: Processing unit, 5220: Input / output device, 5230: Display unit, 5240: Input unit, 5250: Detection unit, 5290: Communication unit, 8001: Ceiling light, 8002: Footlight, 8003: Sheet-type lighting, 8004: Lighting device, 8005: Desk lamp, 8006: Light source

Claims

1. The EL layer located on the first electrode, An insulating layer having regions in contact with the side surface and top surface of the EL layer, The present invention has a second electrode having a region in contact with the upper surface of the EL layer and the upper surface of the insulating layer, The EL layer comprises at least a hole injection layer, an emissive layer, and an oxidation-resistant layer. The hole injection layer contains a low molecular weight compound, The oxidation-resistant layer is located between the light-emitting layer and the second electrode in the light-emitting device.

2. In claim 1, The light-emitting device wherein the oxidation-resistant layer comprises one or more selected from at least one oxide of a metal belonging to Group 4 to Group 8 of the periodic table and an organic compound having an electron-withdrawing group.

Images