Peeling device and peeling method

Abstract

The present invention provides a peeling apparatus and a peeling method that advances peeling symmetrically with respect to the direction of progression. [Solution] A peeling device 1 for separating a bonded substrate T, in which a first substrate W1 and a second substrate W2 are joined, into a first substrate and a second substrate, comprising: a first chuck 10 for holding the first substrate of the bonded substrate; a second chuck 20 for holding the second substrate of the bonded substrate and moving the second substrate in a first direction Z away from the surface of the first substrate; an adjustment mechanism 70 that can adjust the inclination of the second chuck with respect to a setting line set with respect to the holding surface of the second substrate of the second chuck; and a control unit 100 that controls the adjustment mechanism so that the progress of peeling is symmetrical with respect to the setting line.

Description

Technical Field

[0006] , , , , , , , ,

[0005]

[0001] Embodiments of the present invention relate to a peeling device and a peeling method.

Background Art

[0002] In the manufacturing process of semiconductor devices and the like, substrates may be joined together. When two substrates are joined while being displaced from each other, it may be necessary to peel the two substrates.

[0003] As a method for peeling two substrates, a method of advancing the peeling along the advancing direction from one substrate to the other is used. At this time, if the peeling progresses asymmetrically with respect to the advancing direction, a location where stress concentrates may occur, and the substrate may crack.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0005] One embodiment aims to provide a peeling device and a peeling method capable of advancing the peeling symmetrically with respect to the advancing direction.

Means for Solving the Problems

[0006] The peeling apparatus of the embodiment is a peeling apparatus for separating a bonded substrate, in which a first substrate and a second substrate are joined, into the first substrate and the second substrate, and comprises: a first chuck for holding the first substrate of the bonded substrate; a second chuck for holding the second substrate of the bonded substrate and moving the second substrate in a first direction away from the surface of the first substrate; an adjustment mechanism that can adjust the inclination of the second chuck with respect to a direction perpendicular to a setting line set with respect to the holding surface of the second substrate of the second chuck; and a control unit that controls the adjustment mechanism so that the progress of the peeling is symmetrical with respect to the setting line. [Brief explanation of the drawing]

[0007] [Figure 1] A schematic side view showing the configuration of the peeling device according to Embodiment 1. [Figure 2] A schematic cross-sectional view of the bonded substrate according to Embodiment 1. [Figure 3] A schematic plan view of the second chuck according to Embodiment 1. [Figure 4] A diagram illustrating the progression of peeling along the setting line according to Embodiment 1. [Figure 5] A diagram illustrating the tilt adjustment process according to Embodiment 1. [Figure 6] A diagram illustrating, in sequence, a part of the procedure for a peeling process using the peeling device according to Embodiment 1. [Figure 7] A diagram illustrating, in sequence, a part of the procedure for a peeling process using the peeling device according to Embodiment 1. [Figure 8] A diagram illustrating, in sequence, a part of the procedure for a peeling process using the peeling device according to Embodiment 1. [Figure 9] A flowchart illustrating the flow of the tilt adjustment process according to Embodiment 1. [Figure 10] A diagram illustrating, in sequence, a part of the procedure for a peeling process using the peeling device according to Embodiment 1. [Figure 11] A diagram illustrating, in sequence, a part of the procedure for a peeling process using the peeling device according to Embodiment 1. [Figure 12]Schematic plan view of the chuck support portion according to Embodiment 2. [Figure 13] Diagram for explaining the inclination adjustment process according to Embodiment 2.

Mode for Carrying Out the Invention

[0008] Hereinafter, embodiments will be described in detail with reference to the drawings. Note that the present invention is not limited by the following embodiments. Also, the constituent elements in the following embodiments include those that can be easily assumed by those skilled in the art or those that are substantially the same.

[0009] [Embodiment 1] (Configuration example of the peeling device) Using FIGS. 1 to 10, the peeling device 1 of Embodiment 1 will be described.

[0010] FIG. 1 is a schematic side view showing the configuration of the peeling device 1 according to Embodiment 1. Also, FIG. 2 is a schematic cross-sectional view of the bonded substrate T according to Embodiment 1. In FIG. 2, hatching is omitted for clarity.

[0011] The peeling device 1 shown in FIG. 1 is a device capable of performing a peeling process for peeling a bonded substrate T in which a first substrate W1 and a second substrate W2 are joined, as shown in FIG. 2 for example, into the first substrate W1 and the second substrate W2.

[0012] In this specification, hereinafter, the first substrate W1 will be referred to as the "lower wafer W1", and the second substrate W2 will be referred to as the "upper wafer W2". That is, the lower wafer W1 is an example of the first substrate, and the upper wafer W2 is an example of the second substrate.

[0013] In this specification, as shown in FIG. 2, among the plate surfaces of the lower wafer W1, the plate surface on the side joined to the upper wafer W2 is denoted as "joining surface W1j", and the plate surface on the opposite side of the joining surface W1j is denoted as "non-joining surface W1n". Also, among the plate surfaces of the upper wafer W2, the plate surface on the side joined to the lower wafer W1 is denoted as "joining surface W2j", and the plate surface on the opposite side of the joining surface W2j is denoted as "non-joining surface W2n". The lower wafer W1 and the upper wafer W2 may be joined, for example, chemically or by an adhesive.

[0014] In this specification, a predetermined direction along the joining surface of the bonded substrate T held in the peeling device 1 is defined as the Y direction. The Y direction is also a direction along a line connecting the center of the main body portion 211 of the elastic member 21 and the peeling attracting portion 40, which will be described later. The direction from the peeling attracting portion 40 toward the center of the main body portion 211 is defined as the positive direction of Y, and the opposite direction is defined as the negative direction of Y. The vertical direction of the peeling device 1 is defined as the Z direction. At this time, the upward direction is defined as the positive direction of Z, and the downward direction is defined as the negative direction of Z. The Y direction and the Z direction are perpendicular to each other. Also, a direction along the joining surface of the bonded substrate T and intersecting the Y and Z directions is defined as the X direction. At this time, when viewed from the positive direction side of Z, that is, when looking downward at the peeling device 1, the positive direction of X, the positive direction of Y, the negative direction of X, and the negative direction of Y are arranged counterclockwise, and the positive direction of X and the negative direction of X are defined. The X direction is an example of the second direction, and the Z direction is an example of the first direction.

[0015] As shown in FIG. 1, the peeling device 1 includes a first chuck 10, a second chuck 20, a holding portion 30, a peeling attracting portion 40, a plurality of elevating mechanisms 50, a chuck support portion 60, a plurality of adjusting mechanisms 70, a sensor SN, and a control portion 100.

[0016] The first chuck 10 is disposed at the lower part of the peeling device 1 and holds the lower wafer W1 of the bonded substrate T carried into the peeling device 1. Specifically, the first chuck 10 includes a main body portion 11, a support column member 12, and a rotary elevating mechanism 13.

[0017] The main body 11 is formed from a metal member such as aluminum, which is roughly circular in shape. An adsorption surface 101 is provided on the upper surface of the main body 11. The adsorption surface 101 is formed to have a diameter approximately equal to that of the lower wafer W1. The adsorption surface 101 is formed from a porous resin member such as PCTFE (polychlorotrifluoroethylene). Inside the main body 11, a suction space 102 is formed, which communicates with the outside via the adsorption surface 101. The suction space 102 is connected to an intake device 104 such as a vacuum pump via an intake pipe 103.

[0018] The first chuck 10 utilizes the negative pressure generated by the intake of the intake device 104 to attract the non-bonded surface W2n of the lower wafer W1 to the adsorption surface 101. As a result, the lower wafer W1 is held in the main body 11.

[0019] Furthermore, the first chuck 10 is supported by a support member 12 and a rotary lifting mechanism 13. The rotary lifting mechanism 13 rotates the main body 11 by rotating the support member 12 around a vertical axis. The rotary lifting mechanism 13 raises and lowers the main body 11 by moving the support member 12 in the vertical direction.

[0020] The second chuck 20 is positioned above the first chuck 10 and holds the upper wafer W2 of the bonded substrate T that has been brought into the peeling device 1. The second chuck 20 has an elastic member 21 and a plurality of suction parts 22.

[0021] The elastic member 21 is formed from a thin, plate-shaped metal member. The elastic member 21 is positioned above the upper wafer W2 and facing the upper wafer W2.

[0022] Multiple suction parts 22 are arranged on the lower surface of the elastic member 21. Each suction part 22 is connected to an intake device 224, such as a vacuum pump, via an intake pipe 223. Specifically, each suction part 22 includes an elastic body 221 fixed to the lower surface of the elastic member 21 and a suction pad 222 provided below the elastic body 221.

[0023] The suction pad 222 is attracted to the non-bonding surface W2n of the upper wafer W2 by the suction force generated by the intake device 224. That is, the elastic member 21 holds the upper wafer W2 via the suction pad 222 and the elastic body 221.

[0024] The elastic body 221 is made of a material such as rubber. The elastic body 221 expands and contracts in response to the stress in the Z direction applied to the upper wafer W2, which is held in place by the suction pad 222.

[0025] A lifting mechanism 50 is connected to the elastic member 21. The upper wafer W2 held by the elastic member 21 moves upward as the lifting mechanism 50 operates. This causes the separation between the lower wafer W1 and the upper wafer W2 to progress.

[0026] At this time, the upper wafer W2 is subjected to stress corresponding to the degree to which it is easily delaminated from the lower wafer W1. For example, the more difficult it is for delamination to progress, the greater the downward stress on the upper wafer W2. The greater the downward stress on the upper wafer W2, the more the elastic body 221 stretches. The distance between the upper wafer W2 and the elastic member 21 changes according to the amount of stretching and contraction of the elastic body 221.

[0027] The holding unit 30 is positioned above the second chuck 20 and receives and holds the upper wafer W2 after peeling from the second chuck 20. The holding unit 30 comprises a main body 31, a plurality of suction pads 32, and a lifting mechanism 34.

[0028] The main body 31 is a cylindrical member that is inserted through the opening 215 of the elastic member 21. A plurality of suction pads 32 are provided at the lower part of the main body 31. The plurality of suction pads 32 are configured to hold the non-bonding surface W2n of the upper wafer W2. The lifting mechanism 34 moves the plurality of suction pads 32 up and down by moving the main body 31 in the vertical direction. The lifting mechanism 34 is supported, for example, by a chuck support 60.

[0029] The chuck support portion 60 is a plate-shaped member extending in the XY direction and is positioned above the second chuck 20. The chuck support portion 60 is supported by a fixing member (not shown) attached to the ceiling of the peeling device 1.

[0030] The peeling induction portion 40 is positioned on the negative Y direction side with respect to the second chuck 20. The peeling induction portion 40 forms a peeling initiation portion on the side surface of the bonded substrate T, which serves as a trigger for separating the upper wafer W2 and the lower wafer W1. Specifically, the peeling induction portion 40 includes a blade portion 41, a moving mechanism 42, and a lifting mechanism 43.

[0031] The blade portion 41 has a sharp member 41a and a support portion 41b. The sharp member 41a is, for example, a flat blade, and is supported by the support portion 41b such that the cutting edge protrudes in a direction along the bonding surface of the bonded substrate T.

[0032] The peeling induction unit 40 adjusts the height of the blade portion 41 using the lifting mechanism 43, and then moves the blade portion 41 horizontally using the moving mechanism 42. Furthermore, the peeling induction unit 40 brings the sharp member 41a of the blade portion 41 into contact with the joint between the upper wafer W2 and the lower wafer W1 that is exposed on the side surface of the bonded substrate T. As a result, a peeling initiation area is formed on the side surface of the bonded substrate T on the negative direction side of Y.

[0033] Figure 3 is a schematic plan view of the second chuck 20 according to Embodiment 1. More specifically, Figure 3 is a view of the second chuck 20 from above.

[0034] As shown in Figure 3, the elastic member 21 of the second chuck 20 has a main body portion 211, a plurality (in this case, two) of first extending portions 212, and a plurality (in this case, two) of second extending portions 213.

[0035] The main body portion 211 is the part of the elastic member 21 that faces the upper wafer W2. The main body portion 211 is formed in a substantially circular shape with a diameter approximately equal to that of the upper wafer W2. An opening 215 for the holding portion 30 to pass through is formed near the center of the main body portion 211. In addition, the above-mentioned multiple (in this case, six) suction portions 22 are arranged on the lower surface 214 of the main body portion 211. The lower surface 214 is an example of a holding surface.

[0036] Of the six suction parts 22, suction parts 22a to 22c are arranged on the outer periphery of the lower surface 214 of the main body 211 on the negative Y direction side. Of these three, suction parts 22b and 22c are arranged side by side along the X direction with the setting line SL in between. Suction parts 22d to 22e are arranged side by side along the X direction with the setting line SL in between around the opening 215. Suction part 22f is arranged on the outer periphery of the lower surface 214 on the positive Y direction side. In other words, the six suction parts 22 are arranged in the order of suction parts 22a to 22c, 22d to 22e, and 22f from the negative Y direction side to the positive Y direction side.

[0037] Furthermore, the suction portion 22a is in close proximity to the peeling initiation portion formed by the sharp member 41a of the blade portion 41. In other words, the sharp member 41a forms the peeling initiation portion in the vicinity of the suction portion 22a.

[0038] In this example, six suction parts 22 are provided on the main body 211, but the number of suction parts 22 provided on the main body 211 is not limited to six.

[0039] The two first extensions 212 are portions of the main body 211 that extend outward along the Y direction from a portion of the outer periphery. Specifically, of the two first extensions 212, the first extension 212a is a portion of the outer periphery of the main body 211 that extends toward the negative Y direction from a portion of the outer periphery on the Y direction side. The other first extension 212b is a portion of the outer periphery of the main body 211 that extends toward the positive Y direction from a portion of the outer periphery on the Y direction side. A lifting mechanism 50a is connected to the tip of the first extension 212a, and a lifting mechanism 50b is connected to the tip of the first extension 212b. That is, the lifting mechanisms 50a and 50b are aligned along the Y direction.

[0040] The lifting mechanisms 50a and 50b each have a support member 51 and a moving mechanism 52 (Figure 1). The support member 51 is the part connected to the first extensions 212a and 212b, respectively. The moving mechanism 52 is fixed to the upper part of the chuck support 60 and raises and lowers the support member 51 connected to the lower part. This allows the first extensions 212a and 212b to be raised and lowered.

[0041] The lifting mechanisms 50a and 50b perform the above-described operations in accordance with the instructions of the control unit 100. For example, when the lifting mechanism 50a performs the above-described operation, the first extension portion 212a is pulled upward, and in conjunction with this, the end of the main body portion 211 on the negative Y side is lifted. As the negative Y side of the main body portion 211 is lifted, the end of the upper wafer W2 held on the lower surface 214 of the main body portion 211 on the negative Y side is also pulled upward.

[0042] When a delamination initiation site is formed on the negative Y-direction side of the bonded substrate T, and the lifting mechanism 50a performs the above-described operation, delamination begins from the negative Y-direction side. Accordingly, the delamination proceeds along the line connecting the lifting mechanism 50a and the lifting mechanism 50b. Hereafter, this line connecting the lifting mechanism 50a and the lifting mechanism 50b will be referred to as the setting line SL. The setting line SL is also a line that runs along the Y-direction.

[0043] Figure 4 is a diagram illustrating the progress of peeling on the setting line SL according to Embodiment 1.

[0044] Figures 4(a) and 4(b) show the second chuck 20 as seen from above, holding the upper wafer W2. The arrows in Figures 4(a) and 4(b) indicate the direction of peeling. The dashed lines in Figures 4(a) and 4(b) indicate the boundary between the region where the upper wafer W2 has been peeled from the lower wafer W1 and the region where it has not been peeled. That is, the region on the side of the dashed line in the direction of peeling is the region where the upper wafer W2 has not been peeled, and the region on the opposite side is the region where the upper wafer W2 has already been peeled.

[0045] Ideally, the delamination of the upper wafer W2 should proceed symmetrically with respect to the setting line SL, as shown in Figure 4(a). However, in reality, delamination may proceed asymmetrically with respect to the setting line SL, as shown in Figure 4(b). For example, as in the example in Figure 4(b), if delamination does not progress on the negative direction side of X compared to the positive direction side of X, stress concentration may occur on the negative direction side of X, which can cause the substrate to crack.

[0046] The peeling device 1 of Embodiment 1 is provided with an adjustment mechanism 70 for adjusting the progress of peeling in the direction (X direction) intersecting the setting line SL. The adjustment mechanism 70 is connected to the tips of the two second extensions 213.

[0047] Returning to Figure 3, the two second extensions 213 are portions of the outer periphery of the main body 211 that extend outward along the X direction. More specifically, of the two second extensions 213, the second extension 213a is a portion of the outer periphery of the main body 211 that extends toward the negative X direction. The other second extension 213b is a portion of the outer periphery of the main body 211 that extends toward the positive X direction. An adjustment mechanism 70a is connected to the tip of the second extension 213a, and an adjustment mechanism 70b is connected to the tip of the second extension 213b. That is, the adjustment mechanisms 70a and 70b are aligned along the X direction.

[0048] The adjustment mechanisms 70a and 70b (adjustment mechanism 70) each have a support member 71 and a moving mechanism 72 (Figure 1). The support member 71 is the part connected to the second extensions 213a and 213b, respectively. The moving mechanism 72 is fixed to the upper part of the chuck support 60 and raises and lowers the support member 71 which is connected to the lower part. This allows the second extensions 213a and 213b to be raised and lowered.

[0049] The adjustment mechanisms 70a and 70b perform the above-described operations in accordance with the instructions of the control unit 100. Specifically, in accordance with the instructions of the control unit 100, one of the two adjustment mechanisms 70 performs the above-described operations.

[0050] For example, when the adjustment mechanism 70a performs the above-described operation, the second extension portion 213a is pulled upward, and in conjunction with this, the end of the main body portion 211 on the negative X side is lifted. That is, the second chuck 20 is tilted with the negative X side facing upward. As the negative X side of the second chuck 20 is lifted, the negative X side of the upper wafer W2 is also pulled upward. This allows the peeling of the upper wafer W2 on the negative X side to proceed.

[0051] On the other hand, for example, when the adjustment mechanism 70b performs the above-described operation, the second extension portion 213b is pulled upward, and in conjunction with this, the outer circumference of the main body portion 211 on the positive X direction side is lifted. That is, the second chuck 20 is tilted with the positive X direction side facing upward. As the positive X direction side of the second chuck 20 is lifted, the positive X direction side of the upper wafer W2 is also pulled upward. This allows the peeling of the upper wafer W2 on the positive X direction side to proceed.

[0052] Furthermore, multiple (in this case, 12) sensors SN are arranged on the lower surface 214 of the main body 211. The sensors SN are, for example, distance measuring sensors. The sensors SN are positioned to overlap with multiple measurement points MPA provided on the lower surface 214 of the main body 211, and at each measurement point MPA, they measure the distance L (Figure 1) between the lower surface 214 and the non-bonding surface W2n of the upper wafer W2. The sensors SN transmit the measurement result of the distance L to the control unit 100.

[0053] As shown in Figure 3, multiple (12 in this case) measurement points MPA are arranged circumferentially along the outer circumference of the lower surface 214 of the main body 211. The 12 measurement points MPA form multiple pairs with the setting line SL in between, and each pair of measurement points MPA is aligned along the X direction. That is, the pairs of measurement points MPA are positioned symmetrically with respect to the setting line SL.

[0054] In the example shown in Figure 3, for example, measurement points MPA8 and MPA10, measurement points MPA7 and MPA11, measurement points MPA6 and MPA12, measurement points MPA1 and MPA5, and measurement points MPA2 and MPA4 each form a pair. Furthermore, these multiple pairs (five in this case) are arranged from the negative Y direction to the positive Y direction. Measurement points MPA1 to MPA12 are examples of the first and second points.

[0055] The control unit 100 is configured as a computer equipped with a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), etc. (not shown), and controls the entire peeling device 1. For example, the control unit 100 controls the adjustment mechanism 70 based on the measurement result of the distance L obtained from the sensor SN. Hereafter, the control process of the adjustment mechanism 70 by the control unit 100 may be referred to as the tilt adjustment process.

[0056] Figure 5 is a diagram illustrating the tilt adjustment process according to Embodiment 1.

[0057] Figures 5(a) and 5(b) are schematic cross-sectional views of a part of the peeling apparatus 1, including a cross-section along line AA in Figure 3, showing the state in which the bonded substrate T is held. The front side of the paper indicates the negative direction of Y, and the back side of the paper indicates the positive direction of Y. Note that in Figures 5(a) and 5(b), for the sake of explanation, components that are not necessarily included in the same cross-section, such as the suction part 22 and the sharp member 41a, may also be shown.

[0058] Specifically, the control unit 100 obtains the distance L at each measurement point MPA from the sensor SN, and calculates the difference in distance L at the pair of measurement points MPA. Based on the absolute value of the difference in distance L, the control unit 100 determines whether or not the peeling of the upper wafer W2 is progressing symmetrically with respect to the set line SL.

[0059] As described above, the distance L varies depending on the amount of expansion and contraction of the adsorption parts 22a to 22f. The amount of expansion and contraction of the adsorption parts 22a to 22f varies depending on the degree to which delamination between the lower wafer W1 and the upper wafer W2 progresses. Therefore, by obtaining the difference in distance L at a pair of measurement points MPA located symmetrically across the setting line SL, it is possible to determine whether or not delamination is progressing symmetrically with respect to the setting line SL.

[0060] More specifically, the control unit 100 determines that peeling is progressing symmetrically with respect to the set line SL if the absolute value of the difference in distance L in all pairs of multiple measurement point MPA is below a predetermined threshold. On the other hand, the control unit 100 determines that peeling is not progressing symmetrically with respect to the set line SL if the absolute value of the difference in distance L in at least one pair of multiple measurement point MPA is above a predetermined threshold.

[0061] Furthermore, the control unit 100 determines, based on the sign of the difference, whether the delamination is progressing more on the positive or negative side of X relative to the set line SL. For example, consider the case where the control unit 100 calculates the difference by subtracting the value detected by the sensor SN located on the negative side of X from the value detected by the sensor SN located on the positive side of X. If the sign of the difference is positive, it is determined that delamination is not progressing on the positive side of X. If the sign of the difference is negative, it is determined that delamination is not progressing on the negative side of X.

[0062] For example, as shown in Figure 5(a), consider a case where the distance L at measurement point MPA12, located on the negative side of X with respect to the setting line SL, is greater than the distance L at measurement point MPA6, located on the positive side of X. Subtracting the distance L at measurement point MPA6 from the distance L at measurement point MPA6 results in a negative difference. The control unit 100 determines that the delamination on the negative side of X is not progressing compared to the positive side of X. Note that the above-described determination based on the difference is just one example and is not limited to this case.

[0063] The control unit 100 controls the adjustment mechanism 70 according to the determination result described above.

[0064] Specifically, if the control unit 100 determines that the peeling is not progressing symmetrically with respect to the set line SL, it activates the adjustment mechanism 70 located on the side where the peeling is not progressing, and tilts the second chuck 20.

[0065] For example, as shown in Figure 5(b), the control unit 100 operates the adjustment mechanism 70a located on the negative side of X, tilting the second chuck 20 so that the negative side of X is facing upward. This pulls the negative side of X of the upper wafer W2 upward, and delamination proceeds on the negative side of X.

[0066] On the other hand, for example, if the control unit 100 determines that the peeling is progressing symmetrically with respect to the set line SL, it does not execute the control of the adjustment mechanisms 70a and 70b.

[0067] As described above, in the tilt adjustment process, the control unit 100 controls the adjustment mechanism 70 based on the difference in distance L and adjusts the tilt of the second chuck 20 with respect to the X direction. This causes the peeling to proceed symmetrically with respect to the set line SL. At this time, the control unit 100 may also adjust the angle of the second chuck 20 based on the magnitude of the difference in distance L.

[0068] In this case, the control unit 100 determined the symmetry of the peeling by whether the difference in distance L between at least one pair of measurement points MPA exceeded a predetermined threshold, but it is not limited to this. For example, the control unit 100 may determine that the peeling is not progressing symmetrically with respect to the set line SL if the sum of the absolute values ​​of the differences in distance L between pairs of measurement points MPA exceeds a predetermined threshold, and determine that the peeling is progressing symmetrically if the sum falls below the predetermined threshold.

[0069] Furthermore, the control unit 100 performs the above-described tilt adjustment process at predetermined intervals, for example, from the start to the end of the peeling process. This allows the progress of peeling in the direction intersecting the set line SL (X direction) to be adjusted in accordance with the progress of peeling along the set line SL.

[0070] Furthermore, the delamination apparatus 1 is equipped with a plurality of lifting pins 19 (see Figure 10) for supporting the bonded substrate T and the lower wafer W1 after delamination. The plurality of lifting pins 19 are inserted through through holes (not shown) formed through the first chuck 10 and are configured to be able to move up and down by a lifting mechanism (not shown). The plurality of lifting pins 19 are used to temporarily support the bonded substrate T and the lower wafer W1 when loading the bonded substrate T and when unloading the lower wafer W1 after delamination.

[0071] (Removal method) Next, we will explain the method for peeling off the bonded substrate T using Figures 6 to 11.

[0072] Figures 6 to 8 and 10 to 11 illustrate, in order, a part of the procedure for a peeling process using the peeling device 1 according to Embodiment 1. More specifically, Figures 6 to 8 and 10 to 11 are side views of the peeling device 1 along the Y direction. Figure 9 is a flowchart illustrating the flow of the tilt adjustment process according to Embodiment 1. The tilt adjustment process is performed as part of the peeling process.

[0073] First, as shown in Figure 6, when the bonded substrate T is brought into the peeling device 1, the control unit 100 places the bonded substrate T on the suction surface 101 and causes the non-bonded surface W1n of the lower wafer W1 to adhere to the suction surface 101. This holds the lower wafer W1. Next, the control unit 100 moves the blade portion 41 in the positive direction of Y and presses the sharp member 41a against the side surface of the bonded substrate T on the negative direction of Y. This forms the peeling start area.

[0074] Next, in Figure 7, the control unit 100 lowers the suction pad 222 of the second chuck 20 to the vicinity of the upper wafer W2 and suctions the non-bonding surface W2n of the upper wafer W2. This holds the upper wafer W2.

[0075] Next, in Figure 8, the control unit 100 controls the lifting mechanism 50a to pull the first extension portion 212a upward. As a result, the negative Y-direction side of the main body portion 211 is pulled upward, and the upper wafer W2 begins to separate from the lower wafer W1, starting from the separation initiation point. When separation begins, the sensor SN measures the distance L between the lower surface 214 and the non-bonding surface W2n of the upper wafer W2. The sensor SN transmits the distance L at each measurement point MPA as the measurement result to the control unit 100.

[0076] The control unit 100 performs tilt adjustment processing. As shown in Figure 9, the control unit 100 obtains the measurement result of distance L from sensor SN (S1).

[0077] Next, the control unit 100 determines, based on the measurement results, whether or not the peeling is progressing symmetrically with respect to the set line SL (S2). Specifically, the control unit 100 determines whether or not the peeling is progressing symmetrically based on the absolute value of the difference in distance L between the pair of measurement points MPA. If the control unit 100 determines that the peeling is progressing symmetrically (S2: Yes), the process proceeds to step S6.

[0078] If the control unit 100 determines that the peeling is not progressing symmetrically (S2: No), it determines whether peeling is progressing on the positive side of X or not (S3). Specifically, based on the sign of the difference, the control unit 100 determines whether peeling is progressing on the positive side of X or the negative side of X with respect to the set line SL.

[0079] If the control unit 100 determines that delamination is progressing on the positive side of X (S3: Yes), it operates the adjustment mechanism 70a connected to the negative side of X, tilting the second chuck 20 so that the negative side of X is facing upwards (S5). This causes delamination to progress on the negative side of X.

[0080] On the other hand, if the control unit 100 does not determine that delamination is progressing on the positive side of X (S3: No), that is, if it determines that delamination is progressing on the negative side of X, it operates the adjustment mechanism 70b connected to the positive side of X to tilt the second chuck 20 so that the positive side of X is facing upwards (S4). This causes delamination to progress on the positive side of X.

[0081] The control unit 100 determines whether or not the peeling of the upper wafer W2 is complete (S6). If the control unit 100 determines that the peeling is not complete (S6: No), the process returns to S1. If the control unit 100 determines that the peeling is complete (S6: Yes), the tilt adjustment process ends.

[0082] In Figure 10, the control unit 100 raises the multiple lifting pins 19 that support the lower wafer W1 to the transfer position. Subsequently, the control unit 100 removes the peeled lower wafer W1 from the peeling apparatus 1.

[0083] In Figure 11, the control unit 100 controls the lifting mechanism 34 to lower the suction pad 32 of the holding unit 30 to the vicinity of the upper wafer W2, and causes the non-bonding surface W1n of the upper wafer W2 to adhere to the suction pad 32. Next, the suction of the upper wafer W2 by the suction pad 222 of the second chuck 20 is released. As a result, the upper wafer W2 is held by the suction pad 32 of the holding unit 30. Next, the control unit 100 removes the peeled upper wafer W2 from the peeling device 1. This completes the peeling process of Embodiment 1.

[0084] (Overview) The peeling apparatus 1 of Embodiment 1 includes a first chuck 10 for holding the lower wafer W1, a second chuck 20 for holding the upper wafer W2 and moving it upward, an adjustment mechanism 70 that can adjust the inclination of the second chuck 20 with respect to a direction perpendicular to a setting line SL set on the second chuck 20, and a control unit 100. The control unit 100 controls the adjustment mechanism 70 so that the peeling progress is symmetrical with respect to the setting line SL.

[0085] In this way, for example, the adjustment mechanism 70 can tilt the second chuck 20 so that the side where peeling has not progressed is facing upwards relative to the setting line SL, thereby moving the side of the upper wafer W2 where peeling has not progressed upwards. This allows peeling to progress on the side where peeling has not progressed. As a result, peeling can be advanced symmetrically with respect to the setting line SL, and cracking of the substrate can be suppressed.

[0086] [Embodiment 2] The peeling apparatus of Embodiment 2 will be described using Figures 12 to 13.

[0087] Figure 12 is a schematic plan view of the chuck support 60 according to Embodiment 2. More specifically, Figure 12 is a view of the chuck support 60 from above. Figure 13 is a diagram illustrating the tilt adjustment process according to Embodiment 2. More specifically, Figures 13(a) and (b) are schematic cross-sectional views of a part of the peeling apparatus including a cross-section along line BB in Figure 12, where the front side of the paper indicates the negative direction of Y and the back side of the paper indicates the positive direction of Y.

[0088] In Embodiment 1 described above, the peeling device 1 determined the symmetry of the peeling process with respect to the set line SL based on the distance L between the lower surface 214 of the elastic member 21 and the non-bonding surface W2n of the upper wafer W2. In contrast, the peeling device of Embodiment 2 determines the symmetry of the peeling process with respect to the set line SL based on the distance M between the upper surface 220 of the elastic member 21 and the lower surface 610 of the chuck support portion 60. In the following, components similar to those in Embodiment 1 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0089] As explained using Figure 1, a chuck support portion 60 is provided above the second chuck 20 to support the second chuck 20. The chuck support portion 60 is a plate-shaped member that extends in the XY direction. That is, the chuck support portion 60 has a surface facing the elastic member 21.

[0090] As shown in Figures 12 and 13(a) and (b), multiple measurement points (MPB) (12 in this case) are provided circumferentially on the outer circumference of the lower surface 610 of the chuck support portion 60 at a position overlapping with the main body portion 211. The 12 measurement points (MPB) form multiple pairs with the setting line SL in between, and each pair of measurement points (MPB) is aligned along the X direction.

[0091] In the example shown in Figure 12, for example, measurement points MPB8 and MPB10, measurement points MPB7 and MPB11, measurement points MPB6 and MPB12, measurement points MPB1 and MPB5, and measurement points MPB2 and MPB4 each form a pair. Measurement points MPB1 to MPB12 are examples of the first and second points.

[0092] Sensors SN are positioned at locations that overlap with measurement points MPB1 to MPB12. Sensors SN measure the distance M (Figures 13(a), (b)) between the lower surface 610 of the chuck support 60 and the upper surface 220 of the main body 211 at each of the measurement points MPB1 to MPB12. Sensors SN transmit the measurement result of distance M to the control unit 100.

[0093] The control unit 100 obtains the distance M at each measurement point MPB from the sensor SN and calculates the difference in distance M between the pair of measurement points MPB. Based on the absolute value of the difference in distance M, the control unit 100 determines whether or not the peeling of the upper wafer W2 is progressing symmetrically with respect to the set line SL.

[0094] As described above, the elastic member 21 is made of a thin metal plate. Therefore, the elastic member 21 may bend downward in response to the Z-direction stress applied to the upper wafer W2. When the main body 211 bends downward, the distance M between the upper surface 220 of the main body 211 and the lower surface 610 of the chuck support 60 changes according to the amount of bending. Also, as described above, the Z-direction stress applied to the upper wafer W2 is based on the degree of ease of delamination from the lower wafer W1. Therefore, by obtaining the difference in distance M between a pair of measurement points MPB located symmetrically across the setting line SL, it is possible to determine whether or not delamination is progressing symmetrically with respect to the setting line SL.

[0095] Furthermore, the control unit 100 determines, based on the sign of the difference, whether the delamination is progressing further in the positive direction of X or the negative direction of X with respect to the set line SL.

[0096] For example, as shown in Figure 13(a), consider a case where the distance M at measurement point MPB12, located on the negative side of X with respect to the setting line SL, is greater than the distance M at measurement point MPB6, located on the positive side of X, by a predetermined threshold. Subtracting the distance M at measurement point MPB6 from the distance M at measurement point MPB6 results in a negative sign for the difference. The control unit 100 determines that the delamination on the negative side of X is not progressing compared to the positive side of X.

[0097] The control unit 100 controls the adjustment mechanism 70 according to the determination result described above.

[0098] Specifically, for example, as shown in Figure 13(b), the control unit 100 operates the adjustment mechanism 70a to tilt the second chuck 20 so that the negative side of X is facing upward. This pulls the negative side of X of the upper wafer W2 upward, and peeling proceeds on the negative side of X. The peeling apparatus and peeling method of Embodiment 2 also provide the same effects as the embodiments described above.

[0099] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0100] 1... Peeling device, 10... First chuck, 11, 31, 211... Main body, 12, 51, 71... Support column members, 20... Second chuck, 21... Elastic member, 22, 22a~22f... Suction part, 30... Holding part, 40... Peeling induction part, 41a... Sharp member, 50, 50a... Lifting mechanism, 60... Chuck support part, 70, 70a, 70b... Adjustment mechanism, 100... Control unit, 212, 212a ,212b...First extension part, 213,213a,213b...Second extension part, 214,610...Bottom surface, 220...Top surface, 221...Elastic body, L,M...Distance, MPA1~MPA12,MPB 1~MPB12...Measurement point, SN...Sensor, T...Bonded substrate, W1...1st substrate, lower wafer, W1j, W2j...Bonded surface, W1n, W2n...Non-bonded surface, W2...2nd substrate, upper wafer.

Claims

1. A peeling apparatus for separating a bonded substrate, in which a first substrate and a second substrate are joined together, from the first substrate and the second substrate, The bonded substrates include a first chuck that holds the first substrate, A second chuck holds the second substrate among the bonded substrates and moves the second substrate in a first direction away from the surface of the first substrate, An adjustment mechanism that can adjust the inclination of the second chuck with respect to a setting line set on the holding surface of the second substrate of the second chuck, A control unit that controls the adjustment mechanism so that the progression of the peeling is symmetrical with respect to the setting line, Equipped with, Peeling device.

2. The second chuck is, The second substrate is held via an elastic body that is positioned on the holding surface of the second substrate and is expandable and contractible in response to stress on the second substrate in the first direction. A sensor is provided at each of the multiple first points on the retaining surface to measure the distance between the retaining surface and the second substrate. The control unit determines whether the progression of the peeling is symmetrical with respect to the set line based on the distance measured by the sensors provided at each of the plurality of first points. The peeling apparatus according to claim 1.

3. A chuck support portion that supports the second chuck from the first direction, Furthermore, A sensor is provided at each of the multiple first points on the opposing surface of the chuck support portion that faces the second chuck, for measuring the distance between the opposing surface and the second chuck. The control unit determines whether the progression of the peeling is symmetrical with respect to the set line based on the distance measured by the sensors provided at each of the plurality of first points. The peeling apparatus according to claim 1.

4. The plurality of first points include at least two second points aligned in a second direction intersecting the setting line, The control unit, Based on the difference in distance at at least two of the second points, it is determined whether the progression of the peeling is symmetrical with respect to the setting line. The peeling apparatus according to claim 2 or 3.

5. Two lifting mechanisms connected to the second chuck, which are capable of raising and lowering the second chuck in the first direction, Furthermore, The setting line is a line connecting the positions where the two lifting mechanisms of the second chuck are connected. The peeling apparatus according to claim 1.

6. The adjustment mechanism is, Connected to each of the ends of the second chuck in the direction intersecting the setting line, The peeling apparatus according to claim 1.

7. The aforementioned multiple first points are, The ends of the aforementioned retaining surface are set in a circumferential manner, The peeling apparatus according to claim 2 or 3.

8. The adjustment mechanism is connected to each of the two ends of the second chuck in the direction intersecting the setting line, The plurality of first points are set on the retaining surface inward from both ends, The peeling apparatus according to claim 2 or 3.

9. A peeling method performed by a peeling device for separating a bonded substrate, in which a first substrate and a second substrate are joined together, from the first substrate and the second substrate, The first substrate of the bonded substrates is held in the first chuck, The second substrate is held in a second chuck that can move the second substrate in a first direction away from the surface of the first substrate, The inclination of the second chuck with respect to a direction perpendicular to the setting line is adjusted so that the progress of peeling is symmetrical with respect to the setting line set with respect to the holding surface of the second substrate of the second chuck. Method of removal.

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