Manufacturing method for semiconductor devices

Abstract

The present invention provides a method for manufacturing a semiconductor device that allows for the application of a low-dust chemical solution to a wafer. [Solution] The semiconductor device manufacturing method of the embodiment includes the steps of: supplying a chemical solution to the surface of a wafer from a coating nozzle; storing the coating nozzle in a container; supplying a solvent to the container in a second manner; measuring the number of defects in the first solution of the solvent discharged from the container; supplying a chemical solution to the surface of the wafer from the coating nozzle in a first manner when the number of defects in the first solution is less than a first threshold; and continuing to supply the solvent to the container in a second manner when the number of defects in the first solution is equal to or greater than the first threshold.

Description

Technical Field

[0001] Embodiments of the present invention relate to a method for manufacturing a semiconductor device.

Background Art

[0002] In the manufacturing process of a semiconductor device (semiconductor apparatus), there is a process of applying a resist solution to a substrate to form a resist pattern. The application of the resist solution is performed, for example, by discharging the resist solution from a nozzle to substantially the center of a semiconductor wafer (hereinafter referred to as "wafer") while rotating the wafer held by a spin chuck.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the embodiments is to provide a method for manufacturing a semiconductor device capable of applying a chemical solution with less dust to a wafer.

Means for Solving the Problems

[0005] The method for manufacturing a semiconductor device according to the embodiments includes a step of performing a first supply of a chemical solution from an application nozzle to the surface of a wafer, a step of housing the application nozzle in a container, a step of performing a second supply of a solvent into the container, a step of measuring first liquid-phase defects of the solvent discharged from the container, a step of performing a first supply of a chemical solution from the application nozzle to the surface of the wafer when the number of first liquid-phase defects is less than a first threshold value, and a step of continuing the second supply of the solvent into the container when the number of first liquid-phase defects is greater than or equal to the first threshold value.

Brief Description of the Drawings

[0006] [Figure 1] This is a schematic diagram showing a semiconductor manufacturing plant according to an embodiment. [Figure 2] This is a schematic diagram of the resist film forming apparatus according to the embodiment. [Figure 3] This is a schematic perspective view of the main part of the resist film forming apparatus according to the embodiment. [Figure 4] This is a schematic diagram showing a solvent bath and a coating nozzle housed within the solvent bath according to an embodiment. [Figure 5] This is a schematic diagram of a defect detection cell (evaluation unit) used in the first liquid defect inspection apparatus and the second liquid defect inspection apparatus of the embodiment, which acquires the particle size of liquid defects by the FPT method. [Figure 6] This is an example of evaluating a liquid containing defects using the defect detection cell (evaluation unit) of the embodiment. [Figure 7] This is a flowchart showing the method for manufacturing the semiconductor device according to the embodiment.

[0007] The embodiments will be described below with reference to the drawings. In the drawings, identical or similar parts are denoted by the same or similar reference numerals.

[0008] In this specification, the upper direction in a drawing is referred to as "up" and the lower direction in a drawing as "down" to indicate the positional relationship of parts, etc. In this specification, the concepts of "up" and "down" do not necessarily refer to a relationship with the direction of gravity.

[0009] In this specification, the X-axis, the Y-axis perpendicular to the X-axis, and the Z-axis perpendicular to both the X-axis and the Y-axis are defined. The Z-axis is in the opposite direction to the vertical.

[0010] In the embodiments, the "chemical solution" is, for example, a resist mixture containing a resist solvent, a polymer resin, a photosensitive agent, and additives. The "solvent" in the embodiments is an organic solvent for cleaning the coating nozzle. The "solvent" in the embodiments is, for example, a resist solvent used in the "chemical solution".

[0011] (Embodiment) The semiconductor device manufacturing method of the embodiment includes the steps of: supplying a chemical solution to the surface of a wafer from a coating nozzle; storing the coating nozzle in a container; supplying a solvent to the container in a second manner; measuring the number of defects in the first solvent discharged from the container; supplying a chemical solution to the surface of the wafer from the coating nozzle if the number of defects in the first solvent is less than a first threshold; and continuing to supply the solvent to the container in a second manner if the number of defects in the first solvent is equal to or greater than the first threshold.

[0012] Figure 1 is a schematic diagram showing a semiconductor manufacturing plant 1000 according to an embodiment.

[0013] The semiconductor manufacturing plant 1000 is equipped with multiple manufacturing devices, such as a dry etching device 601, a sputtering device 602, a CVD (Chemical Vapor Deposition) device 603, and a resist film formation device 604 as a coating device having a chemical solution ejection nozzle. While the manufacturing devices equipped in the semiconductor manufacturing plant 1000 are not particularly limited, other examples include heat treatment equipment, cleaning and drying equipment, ion implantation equipment, sputtering equipment, and CMP (Chemical Mechanical Polishing) equipment.

[0014] The semiconductor manufacturing apparatus used in the semiconductor device manufacturing method of the embodiment is, for example, a resist film forming apparatus 604.

[0015] The track 400 is located in close proximity to the multiple manufacturing devices described above. The FOUP (Front Opening Unified Pod) 500 is a container used to transport and load wafers into each of the devices. The FOUP 500 is movable along the track 400.

[0016] Figure 2 is a schematic diagram of the resist film forming apparatus 604 according to the embodiment. Figure 3 is a schematic perspective view of the main part of the resist film forming apparatus 604 according to the embodiment.

[0017] The resist film forming apparatus 604 of the embodiment will be described with reference to FIGS. 2 and 3.

[0018] The central portion of the back surface of the wafer W is adsorbed by the spin chuck 82 and held horizontally. The spin chuck 82 can rotate the wafer W in a plane perpendicular to the Z axis while holding the wafer W by a drive mechanism 78 via a drive shaft 80. Further, the spin chuck 82 can move up and down in a direction parallel to the Z axis. Around the drive shaft 80, a tray 74 for receiving the chemical solution applied to the wafer W when the chemical solution scatters around the wafer W is provided. The drive mechanism 78 is, for example, a motor.

[0019] The chemical solution for forming the resist film is supplied from a chemical solution supply source 90b to the surface of the wafer W through a pipe 92 and using an application nozzle 86 from above the wafer W. As shown in FIG. 2, a plurality of chemical solution supply sources 90 (90a, 90b, ··· 90f) may be provided to supply different types of chemical solutions. In the resist film forming apparatus 604 of the embodiment, the number of chemical solution supply sources 90 is not particularly limited.

[0020] The application nozzle 86 while not discharging the chemical solution is standby in a solvent bath (an example of a container) 70. The solvent bath 70 is, for example, a container capable of accommodating a solvent inside. By immersing the application nozzle 86 in the solvent in the solvent bath 70, the resist dry matter and dust attached to the application nozzle 86 are washed. The movement of the application nozzle 86 between the solvent bath 70 and above the wafer W is performed, for example, using a rotation mechanism 94 connected to an arm 96 that holds the application nozzle 86. For example, a pipe 92 is built in the arm 96. The rotation mechanism 94 is, for example, a motor.

[0021] Note that a partition plate 72 is provided between the solvent bath 70 and the wafer W to prevent the chemical solution scattered around the wafer W from mixing into the solvent bath 70.

[0022] Figure 4 is a schematic diagram showing a solvent bath 70 and a coating nozzle 86 housed within the solvent bath 70. For example, a solvent for cleaning the coating nozzle 86 is stored in a chemical supply source 90a. The solvent in the chemical supply source 90a is supplied to the solvent bath 70 from the supply passage 70a via piping 91. After cleaning the coating nozzle 86, the supplied solvent is discharged from the discharge passage 70b and supplied to the first liquid defect inspection device 88a via piping 93. In the first liquid defect inspection device 88a, the solvent after cleaning the coating nozzle 86 is inspected for first liquid defects. Note that the positional relationships of the constituent elements shown in Figures 2, 3, and 4 do not coincide.

[0023] Furthermore, it is preferable that a second liquid defect inspection device 88b is provided in the piping 91 to inspect for defects in the second liquid of the solvent before it is supplied to the container.

[0024] The control device 76 performs functions such as rotating and raising / lowering the wafer W using the spin chuck 82, inspecting liquid defects in the solvent using the first liquid defect inspection device 88a and the second liquid defect inspection device 88b, and moving the coating nozzle 86 between the solvent bath 70 and the top of the wafer W using the rotating mechanism 94.

[0025] The control device 76 is, for example, an electronic circuit. The control device 76 is, for example, a computer composed of a combination of hardware such as an arithmetic circuit and software such as a program.

[0026] Here, the structures of the first liquid defect inspection device 88a and the second liquid defect inspection device 88b are described. The first liquid defect inspection device 88a and the second liquid defect inspection device 88b are inspection devices that use a method to evaluate the presence or absence of liquid defects in the resist solution as the presence or absence of light scatterers, for example, using the light scattering method (liquid particle counter: LPC).

[0027] More specifically, this liquid defect evaluation method involves measuring the size of liquid defects using a measuring instrument based on the light scattering intensity of a light scatterer. The calibration of this measuring instrument is performed using the light scattering intensity of standard particles. Here, standard particles such as polystyrene latex particles of different sizes are used.

[0028] Alternatively, the first liquid defect inspection device 88a and the second liquid defect inspection device 88b are inspection devices that acquire the particle size (geometric diameter) of liquid defects by, for example, the FPT (Flow Particle Tracking) method.

[0029] Figure 5 is a schematic diagram of a defect detection cell (evaluation unit) 314 used in the first liquid defect inspection apparatus 88a and the second liquid defect inspection apparatus 88b, which acquires the particle size of liquid defects by the FPT method. Figure 5(a) is a schematic diagram of the defect detection cell 314 of the embodiment.

[0030] Column 52 is a transparent container capable of holding a solvent. The solvent flow within column 52 is laminar flow in the Z-axis direction. Column 52 is made of, for example, synthetic quartz or sapphire. The solvent flows from the column inlet 52a to the column outlet 52b.

[0031] The irradiation unit (light source) 56 irradiates the solvent in the column 52 with irradiation light, such as laser light. For example, when the solvent flows in the Z-axis direction, the irradiation unit 56 irradiates the solvent with irradiation light in the X-axis direction. However, the direction of irradiation light is not limited to the X-axis direction.

[0032] The imaging unit 58 has a CCD (Charge Coupled Device) sensor or a CMOS (Complementary Metal Oxide Semiconductor) sensor, etc., which are not shown. The imaging unit 58 uses a lens 54, etc., to image the solvent in the column 52. It then acquires a moving image of scattered light emitted from defects in the liquid. Figure 5(b) is an example of a schematic diagram of a moving image of metal particles A acquired by the imaging unit 58. The analysis unit 60 determines the diffusion coefficient D of bubbles B, metal particles A, and particles D that are different from bubbles B and metal particles from this moving image. Here, metal particles A is an example of a first particle. Also, particle D is an example of a second particle. Particle D is, for example, a particle of carbon, silica (quartz), or fluororesin.

[0033] When a defect in a liquid undergoes Brownian motion in the solvent, the diffusion coefficient D of the defect can be determined from a moving image of the scattered light from the defect. The diffusion coefficient D and the particle size d of the defect are related by the following equation.

number

[0034] In equation (1), D is the diffusion coefficient of the liquid defect, k B θ is the Boltzmann constant, T is the absolute temperature, η is the viscosity (viscosity coefficient) of the solvent, and d is the particle size of the defect in the liquid. The calculation unit 62 can determine the particle size d of the defect in the liquid from the diffusion coefficient D using equation (1).

[0035] Furthermore, the refractive index of a defect in a liquid can be determined from the following formula.

number

[0036] In equation (2), I is the intensity of scattered light, I0 is the intensity of incident light, c is the number concentration of defects in the liquid, r is the distance from the defects in the liquid to the imaging unit 58, λ is the wavelength of the incident light, d is the particle size of the defects in the liquid, and m is the relative refractive index of the defects in the liquid with respect to the solvent. The relative refractive index m is obtained by dividing the refractive index n of the defects by the refractive index n0 of the solvent (m = n / n0). If the refractive index n0 of the first or second mixture is known, the calculation unit 62 can determine the refractive index n of the defects in the liquid using equation (2).

[0037] The determination unit 64 uses the refractive index n obtained by the calculation unit 62 to determine whether the defect in the liquid is a bubble or a metal defect A, or a particle D. For example, the determination unit 64 is connected to a database 66 that stores the refractive indices of known materials. For example, the determination unit 64 refers to the refractive index of such known materials in the above determination.

[0038] Figure 6 shows an example of evaluating a liquid containing defects using the defect detection cell (evaluation unit) 314 of the embodiment. In the graph shown in Figure 6, the horizontal axis represents the particle size d of the liquid defects, and the vertical axis represents the refractive index n of the liquid defects calculated by the calculation unit 62.

[0039] Figure 6 shows similar distributions vertically around the solvent refractive index n0. In other words, the calculation unit 62 obtains two refractive indices n for the same particle size d, centered around the solvent refractive index n0. This is because equation (2) is a quadratic equation for the relative refractive index m. Therefore, by comparing the relative refractive index m obtained by equation (2) with known refractive index data, the evaluation method of the embodiment becomes a semi-qualitative method.

[0040] Specifically, when the refractive index of the solvent to be measured is n0, the determination unit 64 preferably determines that the defect in the liquid is a metal particle when the refractive index n is greater than n0+(n0 - 1) or the refractive index n is less than 1. Further, when the refractive index of the solvent to be measured is n0, the determination unit 64 preferably determines that the defect in the liquid is a bubble or particle D when the refractive index n is 1 or more or n0+(n0 - 1) or less. In other words, when the refractive index n is calculated within the range of the difference between the refractive index n0 of the solvent and the refractive index 1 of the bubble, centering on the refractive index n0 of the solvent, the defect in the liquid is determined to be particle D or a bubble, and when the refractive index n is calculated outside the range of the difference between the refractive index n0 of the solvent and the refractive index 1 of the bubble, centering on the refractive index n0 of the solvent, the defect in the liquid is determined to be metal particle A. That is, when the refractive index of the solvent to be measured is n0, the determination unit 64 determines that the defect in the liquid is metal particle A when the refractive index n satisfies "n < 1" or "n0+(n0 - 1) < n", and determines that the defect in the liquid is particle D or a bubble when the refractive index n satisfies "1 ≤ n ≤ n0+(n0 - 1)". The refractive index n0 of the solvent to be measured is, for example, 1.2 to 1.5, but is not limited thereto.

[0041] Note that the database 66 may not be provided. And the determination unit 64 may simply distinguish between bubbles and metal particles using the above-described magnitude relationship of the refractive indices.

[0042] In the embodiment, dust in the chemical solution is referred to as a defect in the liquid. Also, in the embodiment, bubbles B, metal particles A, and particles D different from bubbles B and metal particles in the chemical solution, which are measured using the FPT method, are collectively referred to as defects in the liquid.

[0043] The database 66 is, for example, a storage device such as a semiconductor memory or a hard disk. The analysis unit 60, the calculation unit 62, and the determination unit 64 are, for example, electronic circuits. The analysis unit 60, the calculation unit 62, and the determination unit 64 are, for example, computers configured by a combination of hardware such as arithmetic circuits and software such as programs.

[0044] FIG. 7 is a flowchart showing a method for manufacturing a semiconductor device according to the embodiment.

[0045] First, a first supply of the chemical solution is made to the surface of the wafer W from the coating nozzle 86 (S2). Here, the wafer W is fixed by a spin chuck 82. The wafer W is also rotated by a drive shaft 80 using a drive mechanism 78. This forms a resist film on the surface of the wafer W.

[0046] Next, the application nozzle 86 is placed into the solvent bath 70 (S4).

[0047] Next, the second liquid defect inspection device 88b is used to measure the second liquid defects in the solvent supplied to the solvent bath 70 (S6).

[0048] For example, the first threshold is determined based on the second liquid defect measured in the solvent supplied to the solvent bath 70 using the second liquid defect inspection device 88b. Alternatively, a predetermined threshold may be used as the first threshold.

[0049] For example, if the second liquid defect inspection device 88b is an inspection device that acquires the particle size (geometric diameter) of liquid defects using the FPT method, the number of first particles containing metal and the number of bubbles and second particles different from the first particles are measured in the solvent discharged from the solvent bath 70. Then, for example, the number of first particles measured here may be set as the second threshold, and the number of bubbles and second particles different from the first particles measured here may be set as the third threshold. Furthermore, the second and third thresholds may be used instead of the first threshold, assuming that the first threshold has the second and third thresholds. Note that the second and third thresholds may be thresholds arbitrarily determined in advance.

[0050] For example, the first threshold, second threshold, and third threshold may be stored in a semiconductor memory or hard disk provided within the control device 76.

[0051] Furthermore, it is not necessary to measure defects in the second liquid.

[0052] Next, a second supply of solvent is introduced into the solvent bath 70 (S8). The coating nozzle 86 is cleaned by the second supply of solvent. The solvent used for cleaning is discharged through the discharge passage 70b and then through the piping 93 connected to the discharge passage 70b.

[0053] Next, the first liquid defect inspection device 88a is used to measure the first liquid defects in the solvent discharged from the solvent bath 70 (S10). Here, if the first liquid defect inspection device 88a is an inspection device that acquires the particle size (geometric diameter) of liquid defects using the FPT method, the number of first particles containing metal and the number of bubbles and second particles different from the first particles in the solvent discharged from the solvent bath 70 are measured.

[0054] Next, a comparison is made between the number of defects in the first solution and the first threshold (S12). For example, if the number of defects in the first solution is less than the first threshold, the coating nozzle 86 is moved from inside the solvent bath 70 to above the wafer W (S14), and the first supply of the chemical solution is made from the coating nozzle 86 to the surface of the wafer W (S2). On the other hand, if the number of defects in the first solution is equal to or greater than the first threshold, the number of defects in the second solution of the solvent supplied into the solvent bath 70 is measured (S6), the second supply of solvent is made into the solvent bath 70 (S8), and the number of defects in the first solution of the solvent discharged from the solvent bath 70 is measured (S10).

[0055] Now, let's consider the case where a second threshold and a third threshold are provided. If the number of first particles containing metal is less than the second threshold, and the number of bubbles or second particles different from the first particles is less than the third threshold, the coating nozzle 86 is moved from inside the solvent bath 70 to above the wafer W, and the first supply of the chemical solution is made from the coating nozzle 86 to the surface of the wafer W. On the other hand, if the number of first particles is equal to or greater than the second threshold, or if the number of second particles is equal to or greater than the third threshold, the second liquid defects in the solvent supplied into the solvent bath 70 are measured (S6), a second supply of solvent is made into the solvent bath 70 (S8), and the first liquid defects in the solvent discharged from inside the solvent bath 70 are measured (S10).

[0056] As described above, when the refractive index of the solvent to be measured is n0, the determination unit 64 determines that the liquid-phase defect is the metal particle A when the refractive index n satisfies "n < 1" or "n0 + (n0 - 1) < n", and determines that the liquid-phase defect is the particle D or a bubble when the refractive index n satisfies "1 ≦ n ≦ n0 + (n0 - 1)". For example, in a situation where it can be assumed that there is no particle D other than metal, when the refractive index n satisfies "1 ≦ n ≦ n0 + (n0 - 1)", the liquid-phase defect can be determined as a bubble. Further, when the first liquid-phase defect is a bubble, the coating nozzle 86 may be moved from inside the solvent bath 70 above the wafer W, and the first supply of the chemical solution may be performed from the coating nozzle 86 to the surface of the wafer W.

[0057] Next, the operation and effect of the method for manufacturing a semiconductor device according to the embodiment will be described.

[0058] In the manufacture of semiconductor devices within the semiconductor manufacturing factory 1000, dust that may be mixed in during the transfer of the wafer W can be mixed in. Further, in the manufacture of semiconductor devices within the semiconductor manufacturing factory 1000, dust caused by the chemical solution can be mixed in. Dust caused by the chemical solution is dust generated when the solid component of the chemical solution precipitates when the chemical solution attached to the coating nozzle 86 dries. Here, it has been difficult to separate the dust caused by the chemical solution from the dust caused by other causes and perform dust management. Therefore, it has been difficult to quickly identify the source of the dust. Further, when the source of the dust could not be quickly identified, it was later found that dust had adhered to the surfaces of many wafers W on which the resist film had been formed, resulting in waste of many wafers W and chemical solutions.

[0059] Therefore, the method for manufacturing a semiconductor device according to the embodiment includes a step of performing a first supply of a chemical solution from a coating nozzle to the surface of a wafer, a step of storing the coating nozzle in a container, a step of performing a second supply of a solvent into the container, a step of measuring a first liquid-phase defect of the solvent discharged from the container, a step of performing a first supply of a chemical solution from the coating nozzle to the surface of the wafer when the number of the first liquid-phase defects is less than a first threshold value, and a step of continuing the second supply of the solvent into the container when the number of the first liquid-phase defects is greater than or equal to the first threshold value.

[0060] The coating nozzle is cleaned by supplying a second amount of solvent into the solvent bath 70 (container). The solvent used for cleaning is discharged from the solvent bath 70, and the number of defects in the first solution is measured. When the number of defects in the first solution is less than the first threshold, it means that the dust adhering to the coating nozzle has been sufficiently cleaned, and the first supply of the chemical solution is performed from the coating nozzle to the wafer surface. On the other hand, when the number of defects in the first solution is equal to or greater than the first threshold, it means that the dust adhering to the coating nozzle has not yet been sufficiently cleaned, so the second supply of solvent into the solvent bath 70 is continued, and the cleaning of the coating nozzle 86 is continued. This makes it possible to provide a method for manufacturing a semiconductor device that can coat a chemical solution with less dust.

[0061] By measuring the first liquid defect using the FPT method, it is possible to determine whether the liquid defect in the chemical solution is a first particle containing metal, a bubble, or a second particle different from the bubble and the first particle. This makes it easier to identify the cause of dust contamination. Furthermore, when measuring the first liquid defect using the FPT method, it is preferable that the first threshold has a second threshold and a third threshold, and that when the number of first particles is less than the second threshold and the number of second particles is less than the third threshold, the first supply of the chemical solution is performed from the coating nozzle to the surface of the wafer, and when the number of first particles is equal to or greater than the second threshold or the number of second particles is equal to or greater than the third threshold, the second supply of the solvent into the container is continued, as this makes it easier to identify the cause of dust contamination.

[0062] Furthermore, when measuring the first liquid defect by the FPT method, the process may include a step of supplying the first chemical solution to the surface of the wafer from the coating nozzle if the first liquid defect is a bubble. This is because if the first liquid defect is a bubble, it is considered that it will not remain on the wafer W as a foreign substance.

[0063] Furthermore, the first threshold may be determined by the second liquid defects in the solvent before the second supply is made into the solvent bath 70. By comparing the first and second liquid defects, the cause of dust contamination can be more easily identified. In addition, since the semiconductor manufacturing process can be immediately interrupted when an increase in the second liquid defects is detected, the wasteful use of chemicals and wafers W can be suppressed.

[0064] The semiconductor memory device manufacturing method of this embodiment makes it possible to provide a semiconductor memory device manufacturing method that allows for easy production of semiconductor memory devices.

[0065] While several embodiments and examples of the present invention have been described, these embodiments and examples are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0066] 1: Refractive index 52: Column 52a: Column entrance 52b: Column exit 54: Lens 56: Irradiation area 58: Imaging Department 60:Analysis Department 62: Calculation section 64:Judgment Department 66: Database 70a: Supply route 70b: Discharge path 72: Partition plate 74: Saucer 76: Control device 78: Drive mechanism 80: Drive shaft 82: Spin Chuck 86: Dispensing nozzle 88a: First liquid-based defect inspection device 88b: Second liquid-based defect inspection device 90: Source of drug solution 90a: Source of chemical solution 90b: Source of chemical solution 90f: Source of chemical solution 91: Piping 92: Piping 93: Piping 94: Rotating mechanism 96: Arm 314: Defect detection cell 400: Orbital 601: Dry etching equipment 602: Sputtering equipment 603 :Device 604: Resist film forming apparatus 1000: Semiconductor manufacturing plant

Claims

1. A process of supplying a chemical solution to the wafer surface from a coating nozzle, A step of storing the coating nozzle in the container, A step of supplying a second solvent into the container, A step of measuring the number of liquid defects in the first solvent discharged from the container, When the number of defects in the first liquid is less than a first threshold, the first step is to supply the chemical solution from the coating nozzle to the surface of the wafer, When the number of defects in the first liquid is equal to or greater than the first threshold, the process includes continuing the second supply of the solvent into the container, A method for manufacturing a semiconductor device comprising the same equipment.

2. The step of measuring the first liquid defects in the solvent discharged from the container is as follows: The process involves sending the aforementioned solvent to a transparent column, A step of irradiating the solvent in the column with light, The steps include: imaging the scattered light emitted from the first liquid defect by the irradiation; A step of determining the diffusion coefficient of the first liquid defect from the scattered light captured in the image, A step of calculating the particle size of the first liquid defect and the refractive index of the first liquid defect using the diffusion coefficient, Using the refractive index, the first liquid defect is Is the first particle containing metal? A foam or a second particle different from the foam and the first particle, The process of making a judgment, A method for manufacturing a semiconductor device according to claim 1, comprising:

3. The first threshold has a second threshold and a third threshold, When the number of first particles is less than the second threshold and the number of second particles is less than the third threshold, the first supply of the chemical solution from the coating nozzle to the surface of the wafer is performed. When the number of the first particles is equal to or greater than the second threshold, or when the number of the second particles is equal to or greater than the third threshold, the second supply of the solvent into the container is continued. A method for manufacturing a semiconductor device according to claim 2, further comprising:

4. When the first liquid defect is a bubble, the first step is to supply the chemical solution to the surface of the wafer from the coating nozzle, Furthermore, A method for manufacturing a semiconductor device according to claim 2.

5. The first threshold is determined based on the second liquid defect of the solvent before the second supply is made into the container. A method for manufacturing a semiconductor device according to claim 1.

6. The second and third thresholds are determined based on the second liquid defect of the solvent before the second supply is made into the container. A method for manufacturing a semiconductor device according to claim 3.

Images