Information processing methods, computer programs, and information processing devices.

The method addresses the challenge of determining reaction coefficients in substrate processing simulations by iteratively adjusting coefficients based on experimental and simulated data, improving simulation accuracy and enabling precise process control for semiconductor and glass substrate manufacturing.

JP2026058117APending Publication Date: 2026-04-03TOKYO ELECTRON LTD
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Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-09-24
Publication Date
2026-04-03

AI Technical Summary

Technical Problem

Existing substrate processing simulations for semiconductor wafers and glass substrates face challenges in accurately determining reaction coefficients for gas and plasma-based processes due to the vast number of coefficients required, with many lacking documented values, making it difficult to achieve high simulation accuracy.

Method used

An information processing method that utilizes experimental measurements and simulations to adjust reaction coefficients by comparing experimental and estimated values of reactive species densities, normalizing these values, and iteratively refining the coefficients to improve accuracy.

Benefits of technology

Enables precise determination of reaction coefficients, enhancing simulation accuracy and allowing for high-precision process condition adjustments to achieve desired substrate processing results.

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Abstract

The present invention provides an information processing method, a computer program, and an information processing device that enable the determination of reaction coefficients. [Solution] The information processing method obtains experimental values ​​of the density of reactive species contained in the gas or plasma during substrate processing based on the results of an experiment measuring the state of the gas or plasma in a substrate processing apparatus that processes a substrate using gas or plasma. It then simulates the state of the gas or plasma during substrate processing using the reaction coefficients of the reactions between the reactive species contained in the gas or plasma. Based on the results of the simulation, it calculates an estimated value of the density of reactive species contained in the gas or plasma during substrate processing, and adjusts the reaction coefficients according to the error between the experimental value and the estimated value.
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Description

[Technical Field]

[0001] This disclosure relates to an information processing method, a computer program, and an information processing device. [Background technology]

[0002] Computer simulations are being used for substrate processing, such as etching or film deposition, on semiconductor wafers or glass substrates. For example, by adjusting the process conditions for substrate processing so that the shape of the substrate obtained through simulation becomes a specific shape, it is possible to search for process conditions for obtaining a specific substrate. Patent Document 1 discloses an example of a technique for performing substrate processing simulations. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Patent No. 6899659 [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] Substrate processing includes gas- or plasma-based processes such as CVD (chemical vapor deposition) or plasma etching. Simulations are also performed for substrate processing using gas or plasma. When simulating substrate processing using gas or plasma, reaction coefficients related to the reactions between numerous reactive species such as atoms or ions contained in the gas or plasma are used. To improve the accuracy of the simulation, it is necessary to set the reaction coefficients used in the simulation with precision.

[0005] This disclosure provides an information processing method, a computer program, and an information processing apparatus that enable the determination of reaction coefficients. [Means for solving the problem]

[0006] An information processing method according to one aspect of the present disclosure involves obtaining experimental values ​​of the density of reactive species contained in the gas or plasma during substrate processing based on the results of an experiment measuring the state of the gas or plasma in a substrate processing apparatus that processes a substrate using gas or plasma, performing a simulation of the state of the gas or plasma during substrate processing using the reaction coefficients of the reactions between the reactive species contained in the gas or plasma, calculating an estimated value of the density of reactive species contained in the gas or plasma during substrate processing based on the results of the simulation, and adjusting the reaction coefficients according to the error between the experimental value and the estimated value. [Effects of the Invention]

[0007] According to this disclosure, it is possible to provide an information processing method, a computer program, and an information processing apparatus that enable the determination of reaction coefficients. [Brief explanation of the drawing]

[0008] [Figure 1] This is a conceptual diagram showing an example of the configuration of an information processing system. [Figure 2] This is a block diagram showing an example of the internal configuration of an information processing device. [Figure 3] This is a diagram illustrating examples of multiple types of reaction species. [Figure 4] This is a diagram illustrating examples of several types of electron collision reactions. [Figure 5] This is a diagram illustrating examples of several types of heavy particle reactions. [Figure 6] This is a diagram illustrating an example of experimental data. [Figure 7] This flowchart shows an example of the procedure for determining the reaction coefficient performed by an information processing device. [Figure 8] This flowchart shows an example of a procedure for controlling a substrate processing device by adjusting the process conditions executed by an information processing system. [Figure 9] This flowchart shows an example of the procedure for analyzing circuit board processing performed by an information processing device. [Modes for carrying out the invention]

[0009] The present disclosure will be described in detail below with reference to drawings illustrating its embodiments. The process of manufacturing substrates such as semiconductor wafers, glass substrates, or substrates for flat panel displays includes processes that perform treatments on the substrate, such as etching or film deposition. Hereinafter, treatment of the substrate will be referred to as substrate processing, and the equipment that performs substrate processing will be referred to as processing equipment. For example, processing equipment includes a process chamber, and substrate processing such as etching is performed on the substrate placed inside the process chamber. Substrate processing includes gas and / or plasma-based processes such as CVD or plasma etching. For example, a predetermined gas is introduced into the process chamber, the gas is converted into plasma by the application of a high-frequency voltage, and the surface of the substrate placed inside the process chamber reacts with the gas or plasma, thereby etching the surface of the substrate.

[0010] Simulations of substrate processing are sometimes performed to predict the results of substrate processing. The gas and plasma used in substrate processing contain multiple types of reactive species, including atoms, molecules, electrons, excited species, or ions. These reactive species react with each other and with the substrate surface. When simulating substrate processing using gas and plasma, the state of the gas and plasma during processing is simulated. This simulation calculates the reaction process between the reactive species in the gas and plasma, utilizing reaction coefficients such as collision cross-sections. Reaction coefficients are coefficients included in the equations that define the reaction, such as those in the equation representing the reaction rate. Reaction coefficients exist for each type of reaction.

[0011] In order to perform simulations with high accuracy, it is necessary to accurately determine the reaction coefficients. Conventionally, as the values of the reaction coefficients, manually set values or values described in the literature have been used. Gases and plasmas contain multiple types of reactive species, and multiple types of reactions occur. Therefore, the number of reaction coefficients required for simulations is enormous. Among the reaction coefficients, there are some for which no values are described in the literature, and it is difficult to manually set the values of the enormous number of reaction coefficients appropriately. Thus, a technique for accurately determining the reaction coefficients is desired. In this embodiment, a process for determining more appropriate reaction coefficients is performed.

[0012] FIG. 1 is a conceptual diagram showing a configuration example of the information processing system 100. The information processing system 100 according to this embodiment includes a substrate processing apparatus 21 that executes substrate processing, a measuring apparatus 22 that measures the internal state of the substrate processing apparatus 21, a control apparatus 23 that controls the substrate processing apparatus 21, and an information processing apparatus 1. The substrate processing apparatus 21 performs substrate processing using gases and plasmas on substrates such as semiconductor wafers, glass substrates, or substrates for flat panel displays. For example, the substrate processing apparatus 21 includes a process chamber and performs plasma etching as the substrate processing. The control apparatus 23 controls the operation of the substrate processing apparatus 21.

[0013] The measuring apparatus 22 is an apparatus that measures data for obtaining the composition and density of reactive species contained in the gases and plasmas present inside the process chamber included in the substrate processing apparatus 21. The measuring apparatus 22 is connected to the process chamber and measures the internal state of the process chamber. An experiment in which substrate processing using gases and plasmas is actually performed in the substrate processing apparatus 21 is conducted, and the measurement results by the measuring apparatus 22 are obtained as experimental results. The measuring apparatus 22 is an OES (Optical Emission Spectrometer), a QMS (Quadrupole Mass Spectrometer), or a Langmuir probe.

[0014] The OES is an apparatus for measuring the emission spectra from gases and plasmas and performing qualitative and quantitative analyses of reactive species contained in the gases and plasmas based on the emission spectra. The QMS is a type of mass spectrometer and is an apparatus for measuring the masses of reactive species contained in gases and plasmas and performing qualitative and quantitative analyses of the reactive species. The Langmuir probe is an apparatus for measuring characteristics of a plasma, such as the potential and density of the plasma, and analyzing the state of the plasma.

[0015] The measuring device 22 may be a device other than the OES, the QMS, and the Langmuir probe as long as it measures data for obtaining the composition and density of reactive species contained in gases and plasmas. A plurality of types of measuring devices 22 may be connected to the process chamber included in the substrate processing apparatus 21, and measurements may be performed by the plurality of types of measuring devices 22.

[0016] The information processing device 1 executes an information processing method. The information processing device 1 performs a process of searching for reaction coefficients. More specifically, the information processing device 1 uses the reaction coefficients to simulate the states of gases and plasmas present inside the process chamber during substrate processing, and calculates estimated values of the densities of reactive species contained in the gases and plasmas based on the simulation. The information processing device 1 compares the experimental values of the densities of reactive species obtained by measurement by the measuring device 22 with the estimated values, and performs a process of adjusting the reaction coefficients according to the comparison results.

[0017] Figure 2 is a block diagram showing an example of the internal configuration of the information processing device 1. The information processing device 1 is configured using a computer such as a personal computer or a server device. The information processing device 1 comprises an arithmetic unit 11, a memory 12, a storage unit 13, a reading unit 14, an operation unit 15, a display unit 16, and an input / output unit 17. The arithmetic unit 11 is a processor and is configured using, for example, a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), or a multi-core CPU. The arithmetic unit 11 may also be configured using a quantum computer. The memory 12 stores temporary data generated in connection with calculations. The memory 12 is, for example, RAM (Random Access Memory). The storage unit 13 is non-volatile and is, for example, a hard disk or a non-volatile semiconductor memory. The reading unit 14 reads information from a recording medium 10 such as an optical disc or portable memory.

[0018] The operation unit 15 accepts input of information such as text by receiving operations from the user. The operation unit 15 is, for example, a keyboard, a pointing device, or a touch panel. The display unit 16 displays images. The display unit 16 is, for example, a liquid crystal display or an EL display (Electroluminescent Display). The operation unit 15 and the display unit 16 may be integrated. The input / output unit 17 performs data input and output. The input / output unit 17 is, for example, an input / output interface or a communication unit.

[0019] The arithmetic unit 11 causes the reading unit 14 to read the computer program (program product) 131 recorded on the recording medium 10, and stores the read computer program 131 in the storage unit 13. The arithmetic unit 11 executes processing to realize the functions of the information processing device 1 according to the computer program 131. The computer program 131 may be stored in the storage unit 13 in advance, or it may be downloaded from outside the information processing device 1. In this case, the information processing device 1 does not need to have a reading unit 14.

[0020] The computer program 131 can be deployed on a single computer, located at a single site, or distributed across multiple sites and run on multiple computers interconnected by a communication network. That is, the information processing device 1 may consist of multiple computers, and the computer program 131 may run on multiple computers connected via a communication network. The information processing device 1 may also be configured using a cloud server.

[0021] The processing steps described below for executing the information processing method can be performed on multiple computers. The processing steps can also be performed on different computers. The data used during processing may be stored on multiple computers. The processing steps can also be performed using a virtual machine. The processing steps may be performed by multiple arithmetic units. The processing steps may also be performed by different arithmetic units. For example, part of the processing may be performed on one computer, and other parts on other computers.

[0022] The information processing device 1 includes a simulation model 132 that simulates the state of gas and plasma during substrate processing in the substrate processing device 21. The simulation model 132 simulates the state of gas and plasma inside the process chamber based on information about the process chamber of the substrate processing device 21, information about the process conditions for substrate processing, and reaction coefficients. The simulation calculates the composition and density of the gas and plasma, etc. The simulation model 132 includes a computer program for the simulation. The computer program for the simulation is stored in the storage unit 13 and is included, for example, in computer program 131.

[0023] The memory unit 13 stores reaction coefficient data, which records the values ​​of the reaction coefficients. The reaction coefficient data records the reaction coefficients related to the reactions between reactive species contained in the gas and plasma present inside the process chamber during substrate processing in the substrate processing apparatus 21. During substrate processing, the gas and plasma inside the process chamber may contain multiple types of reactive species.

[0024] Figure 3 is a diagram showing examples of multiple types of reactants. These multiple types of reactants may include various atoms such as Ar (argon), F (fluorine), and N (nitrogen), various molecules such as F2 and N2, and electrons, indicated by E. An asterisk (*) above the symbol of an atom or molecule indicates an excited species formed by the excitation of that atom or molecule. For example, Ar * The symbol indicates an excited species of argon. Multiple types of reaction species may include various excited species. A symbol with a ^ superscript to the right indicates a positive ion, and a symbol with a - indicates a negative ion. For example, F ^ This indicates a positive ion of fluorine, F - The symbol represents a negative ion of fluorine. Multiple types of reactants may include various excited species. The reactants shown in Figure 3 are just examples, and the gas and plasma may contain other reactants. The gas and plasma may also contain unstable atoms, molecules, or ions. Furthermore, none of the reactants shown in Figure 3 may be present in the gas and plasma.

[0025] During substrate processing, electron impact reactions occur in the gas and plasma, where electrons collide with other reactive species. Multiple types of electron impact reactions can occur, differing in the type of reactive species colliding with the electron or the type of reactive species produced as a result of the reaction. Figure 4 is a diagram illustrating examples of multiple types of electron impact reactions. Figure 4 shows multiple types of electron impact reactions, including reactions in which electrons collide with atoms or molecules to produce electrons and excited species, reactions in which electrons collide with positive ions to produce atoms or molecules, reactions in which the reactive species do not change even when electrons collide, and reactions in which electrons collide with molecules to produce negative ions and atoms. As shown in Figure 4, many types of electron impact reactions can occur. The examples of electron impact reactions shown in Figure 4 are just examples, and other electron impact reactions may be assumed. None of the electron impact reactions shown in Figure 4 may be assumed.

[0026] Reaction rate k of electron collision reaction e This can be expressed by equation (1) below, where ε is the electron energy, f(ε) is the electron velocity distribution function, and v is the rate of the reactant species. k e =∫f(ε)·v·σ(ε)·dε …(1)

[0027] The σ(ε) in equation (1) is the collision cross-section and is one of the reaction coefficients. The reaction coefficient data records the value of the reaction coefficient σ(ε) for each of several types of electron collision reactions.

[0028] During substrate processing, in gases and plasmas, in addition to electron collision reactions, heavy particle reactions occur where reaction species other than electrons collide with each other. Multiple types of heavy particle reactions can occur where the types of colliding reaction species or the types of reaction species generated as a result of the reaction are different. FIG. 5 is a chart showing examples of multiple types of heavy particle reactions. M shown in FIG. 5 represents a third body that is not directly involved in the reaction. FIG. 5 shows multiple types of heavy particle reactions, such as a reaction where excited species collide to generate electrons, atoms, and positive ions, a reaction where an excited species collides with an atom or molecule and the excited atom or molecule is exchanged, a reaction where an atom or molecule collides with an ion and charge is transferred, a reaction where atoms collide to generate a molecule, a reaction where a molecule decomposes, etc. As shown in FIG. 5, multiple types of heavy particle reactions can occur. The example of heavy particle reactions shown in FIG. 5 is just one example, and other heavy particle reactions may be assumed. None of the heavy particle reactions shown in FIG. 5 may be assumed.

[0029] Under the assumption of the Maxwell distribution, the reaction rate k of the heavy particle reaction can be expressed by the following equation (2), where T is the temperature and R is the gas constant. k = A·T n ·exp(-E act / RT) …(2)

[0030] (2) The A included in the equation is the frequency factor, n is the exponent, and E act is the activation energy, and all are reaction coefficients. In the reaction coefficient data, for each of the multiple types of heavy particle reactions, the values of the reaction coefficients A, n, and E act are recorded.

[0031] (1) and (2) are examples of equations that define the reaction between reaction species. Other equations that hold under different assumptions or models may be used as equations that define the reaction, and coefficients different from those included in (1) and (2) may be used as reaction coefficients.

[0032] Before the information processing device 1 performs the processing to determine the reaction coefficients, the reaction coefficient data contains arbitrary initial values ​​for the reaction coefficients. These initial values ​​are, for example, specific constants or values ​​listed in literature.

[0033] The memory unit 13 stores experimental data, which are experimental values ​​of the density of reactive species contained in the gas or plasma during substrate processing. Substrate processing is performed using the gas and plasma in the substrate processing apparatus 21, and the measuring device 22 measures the state of the gas and plasma during substrate processing. Based on the experimental results, the densities of multiple types of reactive species contained in the gas and plasma during substrate processing are calculated. The values ​​of the reactive species density calculated based on the experimental results are experimental values ​​of the reactive species density. As mentioned above, the measuring device 22 is an OES, QMS, or Langmuir probe, and based on the measurement results from the measuring device 22, the densities of multiple types of reactive species contained in the gas and plasma during substrate processing are calculated as experimental values.

[0034] For example, the density of each reactive species in the gas and plasma is calculated based on the emission spectrum measured by OES. For example, each reactive species is identified based on the mass measured by QMS, and the density of each reactive species is calculated based on the measured amount of each reactive species. For example, the density of each reactive species is calculated based on the plasma properties measured by a Langmuir probe.

[0035] The experiment is conducted under specific experimental conditions. These experimental conditions include the process conditions for substrate processing. Process conditions include the composition of the gas introduced into the process chamber, the flow rates of each gas component, temperature, pressure, voltage, and voltage frequency. Experimental conditions may also include conditions related to the process chamber, such as the shape of the process chamber, or information related to the substrate, such as the shape of the substrate. In the experiment, the substrate processing apparatus 21 performs multiple substrate processing cycles with different process conditions, and the measuring apparatus 22 measures the state of the gas and plasma for each substrate processing cycle. The density of each reactive species contained in the gas and plasma is calculated for each substrate processing cycle. That is, multiple experiments are conducted under multiple experimental conditions, and experimental values ​​of the density of each reactive species are calculated for each experiment. The experimental value data records the experimental values ​​obtained for multiple experiments.

[0036] Figure 6 is a diagram showing an example of the contents of experimental value data. The experimental value data records normalized values ​​of the density of reactants as experimental values. In Figure 6, "*****" indicates experimental values. The experimental value data records two types of experimental values ​​normalized in two ways. The first type of experimental value records a value normalized by dividing the density of multiple types of reactants by the density of a specific type of reactant. The specific type of reactant is called the first reactant. The experimental value data records experimental values ​​associated with each reactant. Since it is normalized by the density of the first reactant, the experimental value associated with the first reactant is 1. In addition, experimental values ​​normalized by dividing the densities of other reactants such as the second and third reactants by the density of the first reactant are recorded associated with each reactant. For each of the multiple experimental conditions, experimental values ​​of the densities of multiple types of reactants are recorded.

[0037] The experimental data includes a second type of experimental value: a normalized value obtained by dividing the density of the reaction species, which is the result of multiple experiments conducted under multiple experimental conditions, by the density of the reaction species, which is the result of an experiment conducted under a specific experimental condition. This specific experimental condition is designated as the first experimental condition. The experimental data records experimental values ​​associated with each experimental condition. Since the values ​​are normalized by the density of the reaction species based on the results of the experiment under the first experimental condition, the experimental value associated with the first experimental condition is 1. Furthermore, experimental values ​​normalized by dividing the density of the reaction species obtained under other experimental conditions, such as the second and third experimental conditions, by the density of the reaction species obtained under the first experimental condition are recorded associated with each experimental condition. For each of the multiple reaction species, experimental values ​​obtained under multiple experimental conditions are recorded.

[0038] The information processing device 1 receives the measurement results from the measuring device 22 through the input / output unit 17, calculates the density of the reactants based on the measurement results, and normalizes them to calculate the experimental values ​​of the density of each reactant. The information processing device 1 stores the calculated experimental values ​​in the storage unit 13. The process of calculating the experimental values ​​of the density of each reactant based on the measurement results may be performed by an information processing device other than the information processing device 1. In this case, the information processing device 1 receives the experimental values ​​calculated by the other information processing device through the input / output unit 17 and stores the experimental values ​​in the storage unit 13.

[0039] Next, the information processing performed by the information processing device 1 will be described. Figure 7 is a flowchart showing an example of the procedure for determining the reaction coefficient performed by the information processing device 1. Hereafter, steps will be abbreviated as S. The information processing device 1 performs the following processing by having the calculation unit 11 perform information processing according to the computer program 131.

[0040] The substrate processing apparatus 21 and the measuring apparatus 22 conduct experiments, and the experimental values ​​of the density of reactive species contained in the gas and plasma during substrate processing are recorded in the experimental value data stored in the storage unit 13 of the information processing apparatus 1. The information processing apparatus 1 acquires experimental values ​​of the density of multiple types of reactive species (S11). In S11, the calculation unit 11 acquires the experimental values ​​by reading the experimental values ​​of the density of multiple types of reactive species from the experimental value data stored in the storage unit 13. In S11, the calculation unit 11 may also acquire the experimental values ​​by receiving the measurement results from the measuring apparatus 22 and calculating the experimental values ​​of the density of multiple types of reactive species based on the measurement results. In S11, the calculation unit 11 may also acquire the experimental values ​​by receiving experimental values ​​calculated by another information processing apparatus and storing the input experimental values ​​in the storage unit 13 as experimental value data.

[0041] The information processing device 1 then performs a simulation of the gas and plasma state during substrate processing (S12). In S12, the calculation unit 11 uses the simulation model 132 to simulate the gas and plasma state present in the process chamber during substrate processing. At this time, the calculation unit 11 performs the simulation using the values ​​of various reaction coefficients recorded in the reaction coefficient data. The calculation unit 11 also performs a simulation of the gas and plasma state during substrate processing under the same experimental conditions as the experiment performed in the substrate processing device 21.

[0042] For example, simulation model 132 includes a global model, a fluid model, and a particle model. The global model approximates the process chamber as a zero-dimensional space and calculates the time evolution of the plasma's composition, density, and temperature. The fluid model approximates the process chamber as a fluid divided into numerous spatial meshes and calculates the spatial distribution and time evolution of the plasma's composition, density, and temperature. The particle model describes the behavior of each particle in the process chamber and calculates the spatial distribution and time evolution of the plasma's composition, density, and temperature. The calculation unit 11 inputs information necessary for the simulation, such as experimental conditions and reaction coefficients, into simulation model 132, and uses simulation model 132 to simulate the gas and plasma states. The calculation unit 11 also performs simulations of the gas and plasma states for each of multiple experimental conditions.

[0043] The information processing device 1 calculates an estimated value of the reactant density based on the simulation results (S13). The estimated value is the value of the reactant density calculated based on the simulation results. In S13, the calculation unit 11 calculates an estimated value of the density of multiple types of reactants contained in the gas and plasma during substrate processing, based on the simulation results of the gas and plasma states during substrate processing. For example, the calculation unit 11 calculates an estimated value of the density of each reactant at a timing equivalent to the timing at which the measuring device 22 performs measurements in the experiment.

[0044] In S13, the calculation unit 11 calculates two types of estimated values ​​normalized in two ways. The calculation unit 11 calculates a first type of estimated value, which is a value normalized by dividing the density of multiple types of reactants by the density of the first type of reactants. The calculation unit 11 calculates the first type of estimated value for multiple types of reactants for each of the multiple experimental conditions. The calculation unit 11 also calculates a second type of estimated value, which is a value normalized by dividing the density of reactants calculated using multiple experimental conditions by the density of reactants calculated using the first experimental condition. The calculation unit 11 calculates the second type of estimated value for each of the multiple reactants, which is calculated using multiple experimental conditions. The calculation unit 11 stores the calculated estimated values ​​in the memory 12 or the storage unit 13.

[0045] The information processing device 1 then calculates the error between the experimental value and the estimated value (S14). In S14, the calculation unit 11 calculates the error between the experimental value obtained in S11 and the estimated value calculated in S13. For example, the calculation unit 11 calculates the error using a predetermined error function. The error function is included in the computer program 131. For example, the calculation unit 11 calculates the mean squared error as the error. At this time, the calculation unit 11 calculates the difference between a first type of experimental value and a first type of estimated value relating to the same reactant and the same experimental conditions, and adds the square of the difference over all reactants and all experimental conditions. The calculation unit 11 calculates the difference between a second type of experimental value and a second type of estimated value relating to the same reactant and the same experimental conditions, and adds the square of the difference over all reactants and all experimental conditions. The calculation unit 11 calculates the mean squared error by adding up the sums of the squares of the two types of differences.

[0046] The information processing device 1 then determines whether a specific condition is met (S15). In S15, the calculation unit 11 determines whether the condition that the error calculated in S14 falls within a predetermined range is met. For example, the calculation unit 11 determines whether the condition that the error value is less than a predetermined threshold is met. The specific condition may be that the amount of change in the error, which is updated by repeatedly calculating in S14, is less than a predetermined lower limit. The specific condition may also be that the number of repetitions of the processing in S12 to S16 or the calculation time reaches a predetermined upper limit.

[0047] If certain conditions are not met (S15: NO), the information processing device 1 adjusts various reaction coefficients (S16). In S16, the user may input the modification of the reaction coefficients by operating the operation unit 15, and the calculation unit 11 may adjust the reaction coefficients according to the input modification. The calculation unit 11 may also adjust the reaction coefficients without using input from the user. In S16, the calculation unit 11 may adjust the reaction coefficients so that the error between the experimental value and the estimated value of the density of the reaction species is reduced. For example, the calculation unit 11 stores the history of the modification of the reaction coefficients and the change in error in the storage unit 13, and modifies the reaction coefficients to reduce the error based on the stored history. For example, the calculation unit 11 may adjust the reaction coefficients by Bayesian optimization. The calculation unit 11 records the adjusted reaction coefficients in the reaction coefficient data.

[0048] After S16 is completed, the information processing device 1 returns to processing S12. In S12, the information processing device 1 simulates the state of the gas and plasma using the adjusted reaction coefficients. The information processing device 1 repeats processing S12 to S16 until certain conditions are met. By repeating processing S12 to S16, the information processing device 1 adjusts various reaction coefficients so that the experimental value and the estimated value of the density of the reactants are in close agreement. When the experimental value and the estimated value of the density of the reactants are in close agreement, it can be inferred that the adjusted reaction coefficient values ​​are close to the actual reaction coefficient values.

[0049] If certain conditions are met (S15: YES), the information processing device 1 determines various reaction coefficients (S17). In S17, the calculation unit 11 determines that the reaction coefficients used in the simulation are the actual reaction coefficients. The reaction coefficients are repeatedly adjusted by the processes in S12 to S16 and can be estimated to be close to the actual reaction coefficients. Therefore, the information processing device 1 can determine that the adjusted reaction coefficients are the actual reaction coefficients. The information processing device 1 records the determined reaction coefficients (S18). In S18, the calculation unit 11 records the determined reaction coefficients in the reaction coefficient data stored in the storage unit 13. After S18 is completed, the information processing device 1 terminates the process of determining reaction coefficients.

[0050] As described above, the information processing device 1 simulates the state of the gas and plasma using the reaction coefficients of the reactants, compares the simulation results with the experimental results, and adjusts the reaction coefficients according to the comparison results. The simulation results using the reaction coefficients will deviate from the experimental results if the values ​​of the reaction coefficients are inappropriate, and will be closer to the experimental results if the values ​​of the reaction coefficients are appropriate. Specifically, the reaction coefficients are adjusted so that the error between the experimental value and the estimated value of the density of the reactants is reduced, thereby obtaining appropriate values ​​for the reaction coefficients. In this way, the information processing device 1 can accurately identify the reaction coefficients of the reactions between multiple types of reactants contained in the gas and plasma during substrate processing.

[0051] Since reaction coefficients can be identified without manually setting them, the need to manually set a vast number of reaction coefficient values ​​is eliminated, reducing the effort required for simulation. Furthermore, this embodiment makes it possible to accurately identify reaction coefficients for which no values ​​are listed in the literature.

[0052] In this embodiment, the information processing device 1 normalizes the densities of multiple types of reactive species contained in the gas and plasma, and then compares the experimental values ​​and estimated values ​​of the reactive species densities. Since the experimental and estimated values ​​are obtained by different methods, it is difficult to compare their absolute values, but it is easier to compare the relative values ​​of multiple experimental values ​​with the relative values ​​of multiple estimated values. By normalizing the experimental and estimated values ​​of the reactive species densities, it becomes easier to compare the experimental and estimated values, and it becomes possible to adjust the reaction coefficients.

[0053] Furthermore, in this embodiment, normalization is performed in two ways: one method normalizes the density of multiple types of reactants to the density of a specific type of reactant, and the other normalizes the density of reactants obtained under multiple conditions to the density of reactants obtained under a specific condition. Since two types of relative values ​​are compared between the experimental value and the estimated value, the experimental value and the estimated value can be compared in more detail, making it possible to identify the reaction coefficient with greater accuracy. Note that the information processing device 1 may also perform normalization using only one of these methods.

[0054] The information processing system 100 can perform processing to adjust the process conditions for substrate processing using the determined reaction coefficients. Figure 8 is a flowchart showing an example of the procedure for adjusting the process conditions and controlling the substrate processing apparatus 21, which is performed by the information processing system 100. The information processing apparatus 1 records the reaction coefficients determined in the processes S11 to S18 in the reaction coefficient data stored in the storage unit 13. The reaction coefficient data corresponds to a database. The information processing apparatus 1 assumes the process conditions for substrate processing (S21). In S21, the user inputs the contents of the process conditions by operating the operation unit 15, and the calculation unit 11 assumes the process conditions according to the input contents. The calculation unit 11 may also assume the process conditions with predetermined contents.

[0055] The information processing device 1 reads the reaction coefficients of the reactions between reactive species contained in the gas and plasma during substrate processing from the reaction coefficient data (S22). In S22, the calculation unit 11 reads the reaction coefficients from the reaction coefficient data stored in the storage unit 13. The information processing device 1 performs a simulation of the state of the gas and plasma during substrate processing (S23). In S23, the calculation unit 11 uses the simulation model 132 to simulate the state of the gas and plasma present in the process chamber during substrate processing. At this time, the calculation unit 11 performs the simulation using the assumed process conditions and the read-out reaction coefficients. In S23, the calculation unit 11 simulates the interaction between the gas and plasma in the process chamber and the surface of the substrate placed in the process chamber.

[0056] The information processing device 1 calculates a predicted result for substrate processing based on the simulation results (S24). In S24, the calculation unit 11 calculates a predicted result that predicts what kind of results will be obtained by substrate processing using gas and plasma, based on the simulation results of the gas and plasma states during substrate processing. For example, the calculation unit 11 calculates the characteristic quantities of the surface shape of the substrate after substrate processing as a predicted result.

[0057] The information processing device 1 determines whether the calculated predicted result of the substrate processing is the desired processing result (S25). The desired processing result is the desirable result of the substrate processing. In S25, the calculation unit 11 compares the calculated predicted result of the substrate processing with a predetermined desired processing result and makes a determination according to the comparison result. For example, the desired processing result is input to the information processing device 1 by the user operating the operation unit 15. For example, the calculation unit 11 calculates the error between the predicted result of the substrate processing and the desired processing result using a predetermined error function, and determines that the predicted result of the substrate processing is the desired processing result if the error is less than a predetermined threshold. If the error is not less than the predetermined threshold, the calculation unit 11 determines that the predicted result of the substrate processing is not the desired processing result.

[0058] If the predicted result for substrate processing does not match the desired processing result (S25: NO), the information processing device 1 adjusts the process conditions (S26). In S26, the user may input the modification of the process conditions by operating the operation unit 15, and the calculation unit 11 may adjust the process conditions according to the input modification. The calculation unit 11 may also adjust the process conditions without using input from the user. In S26, the calculation unit 11 may adjust the process conditions so as to reduce the error between the predicted result for substrate processing and the desired processing result, or it may adjust the process conditions randomly.

[0059] After S26 is completed, the information processing device 1 returns to processing S23. In S23, the information processing device 1 simulates the state of the gas and plasma using the adjusted process conditions. The information processing device 1 repeats the processes from S23 to S26 until the predicted result of the substrate processing becomes the desired processing result. By repeating the processes from S23 to S26, the information processing device 1 adjusts the process conditions so that the predicted result of the substrate processing becomes the desired processing result. In this way, the process conditions are adjusted to obtain the desired processing result.

[0060] If the predicted result for substrate processing matches the desired processing result (S25: YES), the information processing device 1 determines the process conditions (S27). In S27, the calculation unit 11 determines that the process conditions used in the simulation are the process conditions necessary to obtain the desired processing result. The process conditions are repeatedly adjusted through the processes in S23 to S26 until they become the process conditions necessary to obtain the desired processing result. The calculation unit 11 stores the determined process conditions in the storage unit 13.

[0061] The control device 23 controls the substrate processing device 21 using the determined process conditions (S28). In S28, the control device 23 obtains the process conditions from the information processing device 1, operates the substrate processing device 21, and controls the substrate processing device 21 to perform substrate processing according to the process conditions. Substrate processing according to the determined process conditions is actually performed, and the desired processing result is actually obtained. After S28 is completed, the information processing system 100 terminates processing.

[0062] The processes S21 to S28 may be executed on an information processing system other than the information processing system 100. For example, the reaction coefficients determined by the processes S11 to S18 of the information processing device 1 may be input to another information processing device, and the processes S21 to S28 may be executed by an information processing system including the other information processing device that received the reaction coefficients. The other information processing device records the input reaction coefficients in a database and executes a simulation using the reaction coefficients read from the database. The processes S21 to S27 and the process S28 may not be performed consecutively but at different times. The processes S21 to S27 and the process S28 may be executed on separate information processing systems. For example, the process conditions determined by the processes S21 to S27 of the information processing device 1 may be input to another information processing device, and the process S28 may be executed by an information processing system including the other information processing device that received the process conditions.

[0063] Since the reaction coefficients for reactions between multiple types of reactive species are precisely determined, simulations using these reaction coefficients can be performed with high accuracy. By utilizing high-accuracy simulations, process condition adjustments can be performed with high accuracy, making it possible to accurately identify appropriate process conditions. For example, it becomes possible to accurately identify the process conditions necessary to obtain a substrate with a desired shape through substrate processing. By actually performing substrate processing using the identified process conditions, it becomes possible to produce a substrate with the desired shape.

[0064] The information processing device 1 can perform analysis of the substrate processing using the determined reaction coefficients. Figure 9 is a flowchart showing an example of the procedure for performing analysis of the substrate processing carried out by the information processing device 1. The information processing device 1 performs a simulation of the gas and plasma state during substrate processing (S31). In S31, the calculation unit 11 uses the simulation model 132 to simulate the gas and plasma state present in the process chamber during substrate processing. At this time, the calculation unit 11 performs the simulation using the reaction coefficients determined in the processes of S11 to S18.

[0065] The information processing device 1 analyzes the reactions between reactive species contained in the gas and plasma during substrate processing based on the simulation results (S32). In S32, the calculation unit 11 performs the analysis using existing analysis methods. For example, the calculation unit 11 identifies the course of reactions between multiple reactive species according to the time change of the density of each reactive species obtained by the simulation. For example, it identifies the factors of reactions between multiple reactive species according to the internal state of the process chamber during substrate processing obtained by the simulation, such as the spatial distribution and time change of temperature and pressure, and the spatial distribution or time change of the density of each reactive species.

[0066] In S32, the user may input instructions for analysis by operating the control unit 15, and the calculation unit 11 may perform the analysis according to the input instructions. The processes in S31 to S32 may be repeated as appropriate. For example, the simulation may be repeatedly performed while changing conditions such as process conditions or conditions related to the process chamber, in order to explore the factors of reactions between reactive species contained in the gas and plasma.

[0067] After S32 is completed, the information processing device 1 terminates the process of analyzing the substrate processing. Processes S31 to S32 may be performed by an information processing device other than the information processing device 1. For example, the reaction coefficients determined by the processes S11 to S18 in the information processing device 1 may be input to another information processing device, and processes S31 to S32 may be performed by the other information processing device that has received the reaction coefficients.

[0068] By utilizing highly accurate simulations, it becomes possible to appropriately analyze the reactions between reactive species. For example, the spatial distribution or temporal changes in the density of each reactive species, which cannot be obtained solely through sensor-based measurements, can be accurately reproduced through simulation, allowing for a more detailed identification of the reaction process or factors between reactive species than before. The analysis results can then be used to improve or develop the substrate processing apparatus 21, such as by modifying its configuration or function.

[0069] In this embodiment, a configuration is shown in which the reaction coefficients of reactions between multiple types of reactive species contained in the gas and plasma during substrate processing are adjusted. The information processing device 1 may be configured to adjust the reaction coefficients of reactions between multiple types of reactive species contained only in the gas during substrate processing, or it may be configured to adjust the reaction coefficients of reactions between multiple types of reactive species contained only in the plasma during substrate processing.

[0070] The present invention is not limited to the embodiments described above, and various modifications are possible within the scope of the claims. That is, embodiments obtained by combining technical means that have been appropriately modified within the scope of the claims are also included in the technical scope of the present invention.

[0071] The matters described in each embodiment can be combined with each other. Furthermore, the independent and dependent claims described in the claims can be combined with each other in any combination, regardless of the form of reference. Moreover, although the claims do not use a form in which claims referencing two or more other claims (multi-claim form), they are not limited to this. They may be described using a multi-claim form, or a form in which multi-claims referencing at least one multi-claim (multi-multi-claim). [Explanation of symbols]

[0072] 1. Information Processing Device 10 Recording media 11 Arithmetic section 13 Storage section 14 Computer Programs 21 Substrate Processing Equipment 22 Measuring device 23 Control device

Claims

1. Based on the results of experiments measuring the state of the gas or plasma in a substrate processing apparatus that processes substrates using gas or plasma, experimental values ​​of the density of reactive species contained in the gas or plasma during substrate processing are obtained. Using the reaction coefficients of the reactions between reactive species contained in the gas or plasma, the state of the gas or plasma during substrate processing is simulated. Based on the results of the above simulation, an estimated value of the density of reactive species contained in the gas or plasma during substrate processing is calculated. The reaction coefficient is adjusted according to the error between the experimental value and the estimated value. Information processing methods.

2. The process of running the simulation, calculating the estimated values, and adjusting the reaction coefficients is repeated. The information processing method according to claim 1.

3. The aforementioned experimental values ​​and estimated values ​​consist of values ​​obtained by normalizing the densities of multiple types of reactants by the density of any one type of reactant, and / or values ​​obtained by normalizing the densities of reactants based on the results of multiple experiments conducted under multiple experimental conditions by the density of reactants based on the results of experiments conducted under any one experimental condition. The information processing method according to claim 1.

4. The aforementioned experiment is an experiment using OES, QMS, or a Langmuir probe. The information processing method according to claim 1.

5. Using the adjusted reaction coefficient and the process conditions for substrate processing in the substrate processing apparatus, the simulation is performed. Based on the results of the simulation, the predicted results for substrate processing in the substrate processing apparatus are calculated. Adjust the process conditions according to the prediction results. The information processing method according to claim 1.

6. The substrate processing apparatus is controlled using the adjusted process conditions. The information processing method according to claim 5.

7. The simulation is performed using the adjusted reaction coefficients. Based on the results of the simulation, identify the reaction process or factors that occur between reaction species contained in the gas or plasma during substrate processing. The information processing method according to claim 1.

8. The reaction coefficients, adjusted according to the error between the experimentally calculated value of the density of reactive species contained in the gas or plasma used for processing the substrate and the estimated value of the density calculated based on a simulation using the reaction coefficients of the reactions between reactive species contained in the gas or plasma, are recorded in a database. The adjusted reaction coefficient is read from the database, Using the read-out reaction coefficients, a simulation of the gas or plasma state during substrate processing is performed. Information processing methods.

9. Based on the results of experiments measuring the state of the gas or plasma in a substrate processing apparatus that processes substrates using gas or plasma, experimental values ​​of the density of reactive species contained in the gas or plasma during substrate processing are obtained. Using the reaction coefficients of the reactions between reactive species contained in the gas or plasma, the state of the gas or plasma during substrate processing is simulated. Based on the results of the above simulation, an estimated value of the density of reactive species contained in the gas or plasma during substrate processing is calculated. The reaction coefficient is adjusted according to the error between the experimental value and the estimated value. A computer program that causes a computer to perform a process.

10. Equipped with a calculation unit, The aforementioned arithmetic unit, Based on the results of experiments measuring the state of the gas or plasma in a substrate processing apparatus that processes substrates using gas or plasma, experimental values ​​of the density of reactive species contained in the gas or plasma during substrate processing are obtained. Using the reaction coefficients of the reactions between reactive species contained in the gas or plasma, the state of the gas or plasma during substrate processing is simulated. Based on the results of the above simulation, an estimated value of the density of reactive species contained in the gas or plasma during substrate processing is calculated. The reaction coefficient is adjusted according to the error between the experimental value and the estimated value. Information processing device.

Citation Information

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