Module equipped with an elastic wave device, and method for manufacturing the same
By using insulating resin layers and conductive connections to reduce gaps between elastic wave devices, the module achieves miniaturization and improved mounting density in elastic wave devices.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-09-27
- Publication Date
- 2026-04-08
AI Technical Summary
Existing elastic wave devices with WLP structure face challenges in miniaturization and improved mounting density due to required distances between the device chip and sealing spaces, limiting their integration in modules.
The module design incorporates adjacent first and second elastic wave devices on a substrate with insulating resin layers, including a filling portion, wall, bridging, and hanging portions to fill gaps and form sealing spaces, while a conductive layer connects the devices and substrate, reducing distances to 50 μm or less.
This configuration allows for maximum miniaturization and enhanced mounting density without compromising integrity, achieving reduced distances between device edges and sealing spaces.
Smart Images
Figure 2026060038000001_ABST
Abstract
Description
Technical Field
[0001] This invention relates to an improvement of a module provided with an elastic wave device suitable for use as a frequency filter or the like in mobile communication devices and the like, and an improvement of a manufacturing method suitable for manufacturing the same.
Background Art
[0002] An elastic wave device having a WLP (Wafer Level Package) structure has the structure shown in FIGS. 16 and 17. In FIGS. 16 and 17, reference numeral 100 denotes a device chip, reference numeral 101 denotes a resonator, reference numeral 102 denotes a pad, reference numeral 103 denotes a support layer, reference numeral 104 denotes a cover layer, reference numeral 105 denotes a sealing space (internal space), reference numeral 106 denotes a via, reference numeral 107 denotes an in-via wiring, and reference numeral 108 denotes a bump. The elastic wave device is flip-chip mounted on a support substrate such as a module substrate using the bump 108, and constitutes a module together with other electronic components.
[0003] In an elastic wave device having this structure, in order to ensure the integrity between the support layer 103 and the device chip 100, usually, a distance D1 of at least 50 μm is required between the edge 100a of the device chip 100 and the sealing space 105, and a distance D2 of at least 100 μm is required between the edge 100a of the device chip 100 and the via 106.
[0004] If the distances D1 and D2 can be reduced without impairing the integrity between the support layer 103 and the device chip 100, the elastic wave device can be miniaturized as much as possible, and the mounting density of the module can be improved.
Summary of the Invention
Problems to be Solved by the Invention
[0005] The main problem that this invention aims to solve is to appropriately and effectively achieve the miniaturization of the elastic wave device and, through this, an improvement in mounting density in a module equipped with this type of elastic wave device. [Means for solving the problem]
[0006] In order to achieve the above objectives, in this invention, from a first point of view, a module equipped with an elastic wave device is provided. A module comprising, on a module substrate, at least a first elastic wave device and a second elastic wave device disposed adjacent to the first elastic wave device, The first elastic wave device and the second elastic wave device are each provided on the module substrate by forming a circuit pattern including a plurality of resonators on the main surface of the device chip and fixing the back surface opposite to the main surface to the module substrate, It comprises a filling portion, a first layer made of insulating resin, and a second layer made of insulating resin, and in the lamination region between the first and second layers, the second layer is positioned on the first layer. The filling portion fills the gap between the first elastic wave device and the second elastic wave device, thereby filling this gap. The first layer comprises a wall portion formed in a region of the main surface of the device chip other than the resonator formation region, a bridging portion on the filling portion that connects the wall portion on the first elastic wave device and the wall portion on the second elastic wave device, and a hanging portion that is continuous with the wall portion and covers the side surface of the device chip. The second layer is configured such that a portion of it functions as a roof portion, which works in cooperation with the main surface and the wall portion to form a sealing space for the resonator.
[0007] Furthermore, in order to achieve the above objectives, in this invention, from a second viewpoint, a module equipped with an elastic wave device is provided. A module comprising, on a module substrate, at least a first elastic wave device and a second elastic wave device disposed adjacent to the first elastic wave device, The first elastic wave device and the second elastic wave device are each provided on the module substrate by forming a circuit pattern including a plurality of resonators on the main surface of the device chip and fixing the back surface opposite to the main surface to the module substrate, It comprises a first layer made of an insulating resin and a second layer made of an insulating resin, and in the lamination region between the first and second layers, the second layer is positioned on the first layer. The first layer comprises a wall portion formed in a region of the main surface of the device chip other than the resonator formation region, a filling portion that fills the gap between the first elastic wave device and the second elastic wave device, a bridging portion on the filling portion that connects the wall portion on the first elastic wave device and the wall portion on the second elastic wave device, and a hanging portion that is continuous with the wall portion and covers the side surface of the device chip. The second layer is configured such that a portion of it functions as a roof portion, which works in cooperation with the main surface and the wall portion to form a sealing space for the resonator.
[0008] In the invention according to the first and second aspects described above, one embodiment of the invention is that the first layer further comprises an extension that is continuous with the hanging portion and covers the surface of the module substrate around the first elastic wave device and the second elastic wave device.
[0009] Furthermore, in the invention according to the first and second aspects described above, a third layer made of a conductive material is provided such that in the lamination region with the second layer, the third layer is positioned on the second layer. One embodiment of this invention is that the third layer connects the first elastic wave device and the second elastic wave device, and connects the first elastic wave device and the second elastic wave device to the module substrate.
[0010] Furthermore, in the invention according to the first and second aspects described above, one embodiment of the invention is to make the gap between the first elastic wave device and the second elastic wave device 50 μm or less.
[0011] Furthermore, in the invention according to the first and second aspects described above, one embodiment of the invention is to further provide at least one electronic device other than the first elastic wave device and the second elastic wave device on the module substrate.
[0012] Furthermore, in order to achieve the above objectives, the present invention provides a method for manufacturing a module equipped with an elastic wave device according to the first aspect, from a third perspective. For each of the formation regions of one of the modules in the assembled substrate, The steps include arranging at least the first elastic wave device and the second elastic wave device adjacent to each other, The steps include forming the filling portion in the gap between the first elastic wave device and the second elastic wave device, The steps include forming the first elastic wave device, the second elastic wave device, and the first layer on the filled portion after the formation of the filled portion, The method includes the step of forming the second layer after the first layer has been formed.
[0013] Furthermore, in order to achieve the above objectives, the present invention provides a method for manufacturing a module equipped with an elastic wave device according to the second aspect, from a fourth perspective. For each of the formation regions of one of the modules in the assembled substrate, The steps include arranging at least the first elastic wave device and the second elastic wave device adjacent to each other, A step of forming the filling portion in a gap between the first elastic wave device and the second elastic wave device, and simultaneously forming the first layer including the crosslinked portion on the first elastic wave device, the second elastic wave device, and the filling portion, A step of forming the second layer after forming the first layer, are included.
Advantages of the Invention
[0014] According to this invention, by providing the first layer with a wall portion, a crosslinked portion, and a hanging portion, the contact area between the first layer and the device chip can be increased as much as possible. Even if the distance between the edge of the device chip and the sealing space, and the distance between the edge of the device chip and the via penetrating the first layer and the second layer are made as small as possible, the integrity between the first layer and the device chip is not impaired. As a result, according to this invention, in a module configured with this type of elastic wave device, it is possible to appropriately and effectively achieve the maximum miniaturization of the elastic wave device and the improvement of the mounting density through this.
Brief Description of the Drawings
[0015] [Figure 1] FIG. 1 is a plan configuration diagram of a module (first example) according to an embodiment of this invention. [Figure 2] FIG. 2 is a cross-sectional configuration diagram of the first example. [Figure 3] FIG. 3 is a main part plan configuration diagram showing a configuration example of a resonator formed on a main surface of a device chip constituting the first example. [Figure 4] FIG. 4 is a configuration diagram showing an example of a circuit formed on a main surface of a device chip constituting the first example. [Figure 5] FIG. 5 is a cross-sectional configuration diagram showing a step of the manufacturing process of the first example. [Figure 6] FIG. 6 is a main part enlarged cross-sectional configuration diagram showing a step of the manufacturing process of the first example, and shows an enlarged view of the main part of FIG. 5. [Figure 7]FIG. 7 is an enlarged cross-sectional configuration view of a main part showing one step of the manufacturing process of the first example implemented following the process of FIG. 6. [Figure 8] FIG. 8 is an enlarged cross-sectional configuration view of a main part showing one step of the manufacturing process of the first example implemented following the process of FIG. 7. [Figure 9] FIG. 9 is an enlarged cross-sectional configuration view of a main part showing one step of the manufacturing process of the first example implemented following the process of FIG. 8. [Figure 10] FIG. 10 is an enlarged cross-sectional configuration view of a main part showing one step of the manufacturing process of the first example implemented following the process of FIG. 9. [Figure 11] FIG. 11 is an enlarged cross-sectional configuration view of a main part showing one step of the manufacturing process of the first example implemented following the process of FIG. 10. [Figure 12] FIG. 12 is an enlarged cross-sectional configuration view of a main part showing one step of the manufacturing process of the first example implemented following the process of FIG. 11. [Figure 13] FIG. 13 is an enlarged cross-sectional configuration view of a main part showing one step of the manufacturing process of the first example implemented following the process of FIG. 12. [Figure 14] FIG. 14 is an enlarged cross-sectional configuration view of a main part showing one step of the manufacturing process of the first example implemented following the process of FIG. 13. [Figure 15] FIG. 15 is a cross-sectional configuration view of a module (second example) according to an embodiment of the present invention. [Figure 16] FIG. 16 is a plan configuration view of a conventional example. [Figure 17] FIG. 17 is a cross-sectional configuration view of a conventional example.
MODE FOR CARRYING OUT THE INVENTION
[0016] Hereinafter, based on FIGS. 1 to 15, typical embodiments of the present invention will be described. The module 1 according to this embodiment is configured to include an elastic wave device 2. Such an elastic wave device 2 is suitable for use as a frequency filter or the like in mobile communication devices or the like.
[0017] (Example 1) Figures 1 and 2 show a first example of such module 1. The module 1 of the first example comprises, on a module substrate 3, at least a first elastic wave device 20 and a second elastic wave device 21 arranged adjacent to the first elastic wave device 20. In other words, such module 1 includes one or more sets of device sets 23, each set consisting of two adjacent elastic wave devices 2 arranged on the module substrate 3. In the illustrated example, module 1 comprises two sets of device assemblies 23 on a single module substrate 3. Therefore, in the illustrated example, module 1 comprises a first elastic wave device 20 and the second elastic wave device 21, and at least one other electronic device. Although not shown in the diagram, module 1 may be configured such that one or more sets of device assemblies 23 and one or more electronic devices other than the elastic wave device 2 are provided on a single module substrate 3.
[0018] From the viewpoint of improving the mounting density of module 1, it is preferable that the first elastic wave device 20 and the second elastic wave device 21 in the device assembly 23 be adjacent to each other such that the gap D3 (see Figure 1) between them is 50 μm or less.
[0019] The first elastic wave device 20 and the second elastic wave device 21 are each formed by creating a circuit pattern including a plurality of resonators 4 on the main surface 2b of the device chip 2a.
[0020] Specifically, the device chip 2a has a flattened hexahedron shape with a main surface 2b (functional surface) made from the surface of the piezoelectric material, a back surface 2c opposite to the main surface 2b, and four side surfaces 2d extending between the main surface 2b and the back surface 2c. The points where the main surface 2b and back surface 2c meet the side surfaces 2d are conceived as the edges 2e of the device chip 2a (see Figure 1).
[0021] Typically, lithium tantalate or lithium niobate are used as the piezoelectric material. The device chip 2a may also be constructed by stacking materials such as sapphire, silicon, alumina, spinel, quartz, or glass on the piezoelectric material.
[0022] The circuit pattern includes a plurality of resonators 4, a plurality of external connection pads 5, inter-resonator wiring (not shown) connecting the resonators 4 to each other, and external connection wiring (not shown) connecting the resonators 4 to the pads 5. Such a circuit pattern is typically formed on the main surface 2b by a conductive metal film formed by photolithography.
[0023] Figure 3 shows an example of the configuration of one resonator 4. The resonator 4 has an IDT electrode 4a and a reflector 4b formed so as to sandwich the IDT electrode 4a. The IDT electrode 4a consists of electrode pairs, and each electrode pair is formed by connecting multiple electrode fingers 4c, which are arranged in parallel so that their length intersects the propagation direction x of the elastic wave that becomes the main mode, with a busbar 4d at one end of each pair. The reflector 4b is formed by connecting the ends of multiple electrode fingers 4e, which are arranged in parallel so that their length intersects the propagation direction x of the elastic wave, with a busbar 4f.
[0024] Figure 4 shows a conceptual example of a circuit that can be provided on a single device chip 2a. Reference numeral 40 indicates a resonator 4 connected in series between the input / output ports, reference numeral 41 indicates a resonator 4 connected in parallel between the input / output ports, and reference numeral 6 indicates ground. The number and arrangement of resonators 4 can be changed as needed. In other words, the circuit in Figure 4 constitutes a ladder-type filter.
[0025] Furthermore, as shown in Figure 2, the first elastic wave device 20 and the second elastic wave device 21 are each provided on the module substrate 3 by fixing the back surface 2c of the device chip 2a, opposite to the main surface 2b, to the module substrate 3.
[0026] The fixing is achieved by forming a groove-like gap D3 of 50 μm or less between one of the four side surfaces 2d of the device chip 2a constituting the first elastic wave device 20 and one of the four side surfaces 2d of the device chip 2a constituting the second elastic wave device 21. As a result, the first elastic wave device 20 and the second elastic wave device 21 are arranged adjacent to each other, forming the device assembly 23. In the illustrated example, an adhesive layer 7 made of a die attach material or the like is formed between the back surface 2c of the device chip 2a and the mounting surface 3a of the module substrate 3, and the fixing is achieved by this adhesive layer 7.
[0027] As shown in Figure 2, the module substrate 3 has a mounting surface 3a on which the device assembly 23 is mounted, a back surface 3b opposite to it, and a side surface 3c extending between the two. In the illustrated example, the module substrate 3 has a rectangular outline when viewed from a direction perpendicular to the mounting surface 3a. A blank area 3d (a blank area on which no electronic devices such as elastic wave devices 2 are mounted) is formed in the middle of the module substrate 3 in the longitudinal direction. One of the two sets of device assemblies 23 is positioned on one side of the blank area 3d, and the other set of device assemblies 23 is positioned on the other side of the blank area 3d. A predetermined gap 3e is formed between the module substrate 3 and the device assembly 23, and between the edge of the module substrate 3 along the long side direction, which is formed between the mounting surface 3a and the side surface 2d of the module substrate 3, and between the edge of the module substrate 3 along the short side direction, which is formed between the mounting surface 3a and the side surface 2d, and the device assembly 23. As shown in Figure 2, a device assembly connection pad 3f is formed in the aforementioned interval 3e. An external connection pad 3g is formed on the back surface 2c of the module board 3. The device assembly connection pad 3f and the external connection pad 3g are connected by internal wiring 3h.
[0028] Furthermore, the module 1 according to this embodiment comprises a filling section 8, a first layer 9 made of insulating resin, a second layer 10 made of insulating resin, and a third layer 11 made of conductive material. The first layer 9 is formed in the manufacturing process of the module 1 described later, after the device assembly 23 is fixed to the module substrate 3, and prior to the formation of the second layer 10. Therefore, in the lamination region between the first layer 9 and the second layer 10, the second layer 10 is positioned on top of the first layer 9. Furthermore, the third layer 11 is formed after the formation of the second layer 10 in the manufacturing process of module 1, which will be described later. Therefore, in the stacked region of the first layer 9, the second layer 10, and the third layer 11, and in the stacked region of the second layer 10 and the third layer 11, the third layer 11 is positioned on the second layer 10.
[0029] The filling portion 8 fills the gap D3 between the first elastic wave device 20 and the second elastic wave device 21, thereby filling the gap D3. In the first example, the filler portion 8 is typically made of an insulating resin and is formed prior to the formation of the first layer 9. In the illustrated example, the filling portion 8 has a lower end 8a that contacts the mounting surface 3a of the module substrate 3 and an upper end 8b that is co-plane with the main surface 2b of the device chip 2a, and is formed to fill the gap D3 at any position on the mounting surface 3a in a direction perpendicular to the main surface 2b and in a direction parallel to the main surface 2b.
[0030] The first layer 9 integrally comprises a wall section 9a, a bridge section 9b, and a hanging section 9c.
[0031] The wall portion 9a is formed in an area of the main surface 2b of the device chip 2a other than the area where the resonator 4 is formed. The wall portion 9a surrounds the area where the resonator 4 is formed.
[0032] The bridging portion 9b is located on the filling portion 8 and connects the wall portion 9a on the first elastic wave device 20 and the wall portion 9a on the second elastic wave device 21. The bridging portion 9b is formed to cover the upper end 8b of the filling portion 8.
[0033] The hanging portion 9c is continuous with the wall portion 9a and covers the side surface 2d of the device chip 2a. In the illustrated example, the three side surfaces 2d of the device chip 2a other than the side surface 2d that constitute the gap D3 are each covered by the hanging portion 9c.
[0034] In the illustrated example, the first layer 9 further includes an extension 9d that is continuous with the hanging portion 9c and covers the surface of the module substrate 3 around the first elastic wave device 20 and the second elastic wave device 21. In the illustrated example, the extension 9d is positioned to cover a portion of the mounting surface 3a of the module substrate 3 in the gap 3e formed between the device assembly 23 and the edge of the module substrate 3. In the illustrated example, the surface of the module substrate 3 is covered by the extension 9d so as to surround the device assembly 23, except for the area where the filling portion 8 is formed. Furthermore, in the illustrated example, the empty area 3d is also covered by the extension 9d, and the first layer 9 formed on one of the two sets of device assemblies 23 and the first layer 9 formed on the other of the two sets of device assemblies 23 are integrated by the extension 9d on the empty area 3d.
[0035] The second layer 10 has a portion that functions as a roof portion 10a, which works in cooperation with the main surface 2b and the wall portion 9a to form a sealing space 12 for the resonator 4. Multiple sealing spaces 12 may be formed on the main surface 2b. Furthermore, one or more resonators 4 may be located within a single sealing space 12. The roof section 10a is supported by the wall section 9a, with a gap equal to the thickness of the wall section 9a between it and the main surface 2b. In the illustrated example, the second layer 10 is also formed on the bridging portion 9b, the hanging portion 9c, and the extension portion 9d of the first layer 9. Outside the sealing space 12, vias 13 are formed that penetrate the first layer 9 and the second layer 10, with the pad 5 positioned at the bottom of the hole.
[0036] The third layer 11 includes a via-internal wiring portion 11a that is filled into the via 13 and connected to the pad 5, a first connection portion 11b that extends beyond the hanging portion 9c toward the side surface 3c of the module substrate 3 and covers the device assembly connection pad 3f, a second connection portion 11c formed on the bridging portion 9b that connects the first elastic wave device 20 and the second elastic wave device 21, and a third connection portion 11d formed between the two device assemblies 23 that connects the two device assemblies 23 to each other. The third connection portion 11d is formed on the second layer 10 in the empty region 3d. The third layer 11 connects the first elastic wave device 20 and the second elastic wave device 21, and connects the first elastic wave device 20 and the second elastic wave device 21 to the module substrate 3.
[0037] In the figure, reference numeral 14 indicates a resin molding material formed on the third layer 11, and the module 1, together with this molding material 14 and the module substrate 3, exhibits a flattened hexahedral shape.
[0038] In the module 1 according to this embodiment, the contact area between the first layer 9 and the device chip 2a can be increased as much as possible by providing the first layer 9 with a wall portion 9a, a bridging portion 9b, and a hanging portion 9c. As a result, even if the distance D1 between the edge portion 2e of the device chip 2a and the sealing space 12 (see Figure 1), and the distance D2 between the edge portion 2e of the device chip 2a and the via 13 penetrating the first layer 9 and the second layer 10 (see Figure 1) are made as small as possible, the integrity between the first layer 9 and the device chip 2a is not impaired. In the illustrated example, the first layer 9 is further provided with the extension portion 9d, further increasing the contact area between the first layer 9 and the device chip 2a. As a result, in a module 1 configured with this type of elastic wave device 2, it becomes possible to appropriately and effectively achieve miniaturization of the elastic wave device 2 and, through this, an improvement in mounting density. Specifically, it was determined that the distance D1 could be set to approximately 30 μm, and that the distance D2 could be set to approximately 35 μm.
[0039] Typically, the device chip 2a is configured to be a rectangular plate with sides of 0.5 to 1 mm and a thickness of 0.15 to 0.2 mm. Furthermore, the first layer 9 typically has a thickness of 5 to 20 μm. Furthermore, the second layer 10 typically has a thickness of 10 to 50 μm. Furthermore, the third layer 11 typically has a thickness of 10 to 100 μm. Furthermore, the module substrate 3 typically has a thickness of 100 to 300 μm. In each figure, the thickness of the components of the elastic wave device 2 is exaggerated to make it easier to understand the device's structure.
[0040] (Example 2) Figure 15 shows a second example of such module 1. In this second example, the first layer 9 comprises a wall portion 9a formed in a region of the main surface 2b of the device chip 2a other than the region where the resonator 4 is formed, a filling portion 9e that fills the gap D3 between the first elastic wave device 20 and the second elastic wave device 21, a bridging portion 9b located on the filling portion 9e that connects the wall portion 9a on the first elastic wave device 20 and the wall portion 9a on the second elastic wave device 21, and a hanging portion 9c that is continuous with the wall portion 9a and covers the side surface 2d of the device chip 2a. In other words, the second example differs from the first example in that the filling portion 9e is also formed by the first layer 9. Furthermore, the remaining points of the second example are substantially the same as those of the first example, so their explanation will be omitted.
[0041] (Manufacturing method for Module 1) Module 1, as described above, can be manufactured appropriately and efficiently by the following manufacturing process.
[0042] First, at least the first elastic wave device 20 and the second elastic wave device 21 are placed adjacent to each other in a single module 1 formation region 15a (see Figures 5 and 6) on the assembly substrate 15 (Figures 5 and 6 / Step 1). The assembly substrate 15 is then cut in the final stage to become the module substrate 3. Specifically, the back surface 2c of the device chip 2a constituting the first elastic wave device 20 and the back surface 2c of the device chip 2a constituting the second elastic wave device 21 are bonded to the surface 15b of the module substrate 3 on the assembly substrate 15 via a die attach material (adhesive layer 7).
[0043] Next, the filling portion 8 is formed in the gap D3 between the first elastic wave device 20 and the second elastic wave device 21 (Figure 7 / Step 2). Typically, the gap D3 is filled with an epoxy resin or a polyimide resin, and the filled portion 8 is formed by heat curing it.
[0044] Next, after the formation of the filling portion 8, the first elastic wave device 20, the second elastic wave device 21, and the first layer 9 are formed on the filling portion 8 (Figure 7 / Step 3). Typically, the first layer 9 is formed by applying a resin that will become the first layer 9 onto the surface of the aggregate substrate 15 and then performing patterning. Alternatively, the first layer 9 is formed by overlapping a sheet made of resin that will become the first layer 9 onto the surface of the aggregate substrate 15 and then performing patterning.
[0045] Furthermore, by performing steps 2 and 3 above simultaneously using the resin that will become the first layer 9, it is possible to obtain a second example in which the filled portion 9e is also formed by the first layer 9.
[0046] Next, the second layer 10 is formed after the first layer 9 has been formed (Figure 8 / Step 4). Typically, the second layer 10 is formed by applying a resin that will become the second layer 10 to the surface of the aggregate substrate 15 and then patterning it. Alternatively, the second layer 10 is formed by layering a sheet made of resin that will become the second layer 10 onto the surface of the aggregate substrate 15 and then patterning it. The vias 13 are also formed by this patterning.
[0047] Next, a seed layer 16 is formed on the second layer 10 (Figure 9 / Step 5). Typically, the seed layer 16, with a thickness of approximately 0.1 μm, is formed by methods such as metal sputtering or metal vapor deposition.
[0048] Next, a plating resist layer 17 is patterned on the surface of the aggregate substrate 15, and a protective resist layer 18 is formed on the back surface 15c of the aggregate substrate 15 (Figure 10 / Step 6). Next, a plating layer, which will become the third layer 11, is formed on the surface of the assembled substrate 15 (Figure 11 / Step 7).
[0049] Next, the plating resist layer 17 is removed (Figure 12 / Step 8).
[0050] Next, a portion of the seed layer 16 and the protective resist layer 18 are removed (Figure 13 / Step 9).
[0051] Next, a molding material 14 is formed on the surface 15b of the assembly substrate 15, and the assembly substrate 15 is divided into individual module 1 formation regions (Figure 14 / Step 10). This generates multiple modules 1.
[0052] Naturally, the present invention is not limited to the embodiments described above, but includes all embodiments that can achieve the objectives of the present invention. [Explanation of Symbols]
[0053] x propagation direction D1, D2 distance D3 Gap 1 module 2, 20, 21 Elastic wave devices 2a Device chip 2b main surface 2c back 2d side 2e Edge 23 device groups 3 Module board 3a Implementation side 3b Back 3c side 3D free space 3e spacing 3f Device assembly connection pad 3G external connection pad 3h internal wiring 4, 40, 41 resonators 4a IDT electrode 4b reflector 4c electrode finger 4D bus bar 4e electrode finger 4F Bus Bar 5 pads 6 Grand 7 Adhesive layer 8 Filling section 8a bottom edge 8b Top edge 9 1st layer 9a Wall section 9b Bridge part 9c hanging part 9d extension 9e Filling section 10 2nd layer 10a Roof section 11 3rd layer 11a Via internal wiring section 11b First connection section 11c Second connection section 11d Third connection 12 Sealed space 13 Beer 14 Molding material 15. Assembly board 15a Formation area 15b surface 15c back side 16 Seed Layer 17 Plating resist layer 18. Protective resist layer
Claims
1. A module comprising, on a module substrate, at least a first elastic wave device and a second elastic wave device disposed adjacent to the first elastic wave device, The first elastic wave device and the second elastic wave device are each formed by having a circuit pattern including a plurality of resonators formed on the main surface of a device chip, and are provided on the module substrate by fixing the back surface opposite to the main surface to the module substrate, It comprises a filling portion, a first layer made of insulating resin, and a second layer made of insulating resin, and in the lamination region between the first and second layers, the second layer is positioned on the first layer. The filling portion fills the gap between the first elastic wave device and the second elastic wave device, thereby filling this gap. The first layer comprises a wall portion formed in a region of the main surface of the device chip other than the resonator formation region, a bridging portion on the filling portion that connects the wall portion on the first elastic wave device and the wall portion on the second elastic wave device, and a hanging portion that is continuous with the wall portion and covers the side surface of the device chip. A module equipped with an elastic wave device, wherein the second layer is a roof portion that, in cooperation with the main surface and the wall portion, forms a sealing space for the resonator.
2. A module comprising, on a module substrate, at least a first elastic wave device and a second elastic wave device disposed adjacent to the first elastic wave device, The first elastic wave device and the second elastic wave device are each formed by having a circuit pattern including a plurality of resonators formed on the main surface of a device chip, and are provided on the module substrate by fixing the back surface opposite to the main surface to the module substrate, It comprises a first layer made of an insulating resin and a second layer made of an insulating resin, and in the lamination region between the first and second layers, the second layer is positioned on the first layer. The first layer comprises a wall portion formed in a region of the main surface of the device chip other than the region where the resonator is formed, a filling portion that fills the gap between the first elastic wave device and the second elastic wave device, a bridging portion on the filling portion that connects the wall portion on the first elastic wave device and the wall portion on the second elastic wave device, and a hanging portion that is continuous with the wall portion and covers the side surface of the device chip. A module equipped with an elastic wave device, wherein the second layer is a roof portion that, in cooperation with the main surface and the wall portion, forms a sealing space for the resonator.
3. The module comprising an elastic wave device according to claim 1 or 2, wherein the first layer further comprises an extension that is continuous with the hanging portion and covers the surface of the module substrate around the first elastic wave device and the second elastic wave device.
4. Furthermore, a third layer made of a conductive material is provided such that, in the lamination region with the second layer, the third layer is positioned on the second layer. A module comprising an elastic wave device according to claim 1 or claim 2, wherein the third layer connects the first elastic wave device and the second elastic wave device, and connects the first elastic wave device and the second elastic wave device to the module substrate.
5. A module comprising the elastic wave device according to claim 1 or claim 2, wherein the gap between the first elastic wave device and the second elastic wave device is 50 μm or less.
6. A module comprising an elastic wave device according to claim 1 or 2, further comprising at least one electronic device other than the first elastic wave device and the second elastic wave device on the module substrate.
7. A method for manufacturing a module equipped with the elastic wave device described in claim 1, For each of the formation regions of one of the modules in the assembled substrate, The steps include arranging at least the first elastic wave device and the second elastic wave device adjacent to each other, The steps include forming the filling portion in the gap between the first elastic wave device and the second elastic wave device, The steps include forming the first elastic wave device, the second elastic wave device, and the first layer on the filled portion after the formation of the filled portion, A method for manufacturing a module equipped with an elastic wave device, comprising the step of forming the second layer after the formation of the first layer.
8. A method for manufacturing a module equipped with the elastic wave device described in claim 2, For each of the formation regions of one of the modules in the assembled substrate, The steps include arranging at least the first elastic wave device and the second elastic wave device adjacent to each other, The steps include forming the filling portion in the gap between the first elastic wave device and the second elastic wave device, and simultaneously forming the first layer including the bridging portion on the first elastic wave device, the second elastic wave device, and the filling portion, A method for manufacturing a module equipped with an elastic wave device, comprising the step of forming the second layer after the formation of the first layer.