Packaging substrate with embedded bridge and method for manufacturing the same

Abstract

This invention provides a packaging substrate and a method for manufacturing the same, which improves the connection density between chips and power efficiency by using a glass core with an integrated bridge. [Solution] A packaging substrate with an embedded bridge includes a glass core having a cavity and through electrodes 42, a bridge disposed in the cavity, an integrated electrode 42 disposed on one surface of the bridge and one surface of the glass core, and an insulating material 45 disposed between the glass core and the bridge and between the integrated electrodes 46. The bridge includes a bridge core which is a support, and a bridge electrode 74 disposed inside the bridge core, electrically connecting at least two points on one surface of the bridge to each other, with both ends exposed on the surface of the bridge core. The integrated electrode is an electrically conductive layer electrically connected to at least one of the through electrodes and the bridge electrodes.

Description

Technical Field

[0001] The embodiment relates to a packaging substrate in which a bridge is embedded in a glass core and a method for manufacturing the same.

Background Art

[0002] In fabricating electronic components, the process of implementing a circuit on a semiconductor wafer is called the front-end (FE) process, and the process of assembling the wafer into a state where it can be used in an actual product is called the back-end (BE) process, and this back-end process includes a packaging process.

[0003] The four core technologies of the semiconductor industry that have enabled the rapid development of recent electronic products are semiconductor technology, semiconductor packaging technology, manufacturing process technology, and software technology. Semiconductor technology has evolved into various forms such as sub-micron line widths in nano units, over ten million cells, high-speed operation, and a large amount of heat dissipation, but relatively, there is no technology that perfectly supports packaging this. Therefore, the electrical performance of a semiconductor may sometimes be determined by the packaging technology and the electrical connections thereby, rather than the performance of the semiconductor technology itself.

[0004] As materials for packaging substrates, ceramics or resins are applied, but recently, research has been underway to apply silicon or glass to high-end packaging substrates, and in particular, a packaging substrate having a cavity structure has been developed by applying a glass substrate.

[0005] Related prior arts include US Patent Publication US2022 / 0028788A1, US Patent Publication US2021 / 0028080A1, etc.

Summary of the Invention

Problems to be Solved by the Invention

[0006] The objective of this embodiment is to provide a packaging substrate and a method for manufacturing the same, in which the manufacturing workability and power efficiency of the packaging substrate are improved by incorporating a bridge into the glass core.

[0007] Another objective of this embodiment is to overcome the processing difficulties of plate glass and to provide a packaging substrate having embedded bridges and a method for manufacturing the same. [Means for solving the problem]

[0008] A packaging substrate with an embedded bridge, according to one embodiment for achieving the above objective, includes: a glass core having a cavity and through electrodes; a bridge disposed in the cavity; integrated electrodes disposed on one surface of the bridge and one surface of the glass core; and insulating material disposed between the glass core and the bridge and between the integrated electrodes.

[0009] The bridge includes a bridge core which is a support; and bridge electrodes disposed inside the bridge core, electrically connecting at least two points on one surface of the bridge to each other, with both ends exposed on the surface of the bridge core.

[0010] The integrated electrode is an electrically conductive layer electrically connected to at least one of the through electrode and the bridge electrode.

[0011] The lower part of the cavity may further include a fixing portion.

[0012] The fixed portion may be positioned to face the integrated electrode across the bridge.

[0013] The packaging substrate may include a first die and a second die arranged on the integrated electrode.

[0014] An electrical signal can be transmitted between the first die and the second die via the bridge electrode.

[0015] The integrated electrode may include a first integrated electrode disposed on the glass core or the bridge, and a second integrated electrode disposed on the first integrated electrode.

[0016] The first integrated electrode may include a first vertically conductive layer, a first planar electrically conductive layer, and a combination thereof, which are directly connected to the through electrode or bridge electrode.

[0017] The second integrated electrode may include a second vertically conductive layer, a second planar electrically conductive layer, and combinations thereof, all connected to the electrically conductive layer of the first integrated electrode.

[0018] A lower insulating cover may be placed below the glass core.

[0019] The fixing portion can be positioned between the bridge and the lower insulating cover.

[0020] The fixing portion may include an adhesive layer.

[0021] A sealing material covering the first die and the second die, and a lead frame surrounding the sealing material may be further arranged on the packaging substrate.

[0022] The bridge may further include through-bridge electrodes that penetrate the bridge core vertically.

[0023] The integrated electrode may be an electrically conductive layer electrically connected to at least one of the through electrode, the bridge electrode, and the bridge through electrode.

[0024] The bridge core may include plate-shaped silicon or plate-shaped silicon carbide.

[0025] The system may include a third integrated electrode positioned on the second integrated electrode.

[0026] The third integrated electrode may include a third vertically conductive layer, a third planar conductive layer, and combinations thereof, which are connected to the electrically conductive layer of the second integrated electrode.

[0027] The bridge through electrode may further include a bridge electrode pad disposed on the upper or lower part of the bridge core.

[0028] The through electrode is disposed in a core via which is a via penetrating the glass core, and the glass core may be a plate glass etched to have the cavity and the core via.

[0029] A method for manufacturing a packaging substrate in which a bridge according to another embodiment for achieving the above object is embedded includes a preparation step of providing a glass core having a cavity and a core via; a fixing step of disposing the bridge in the cavity and fixing the position; a patterning step of disposing a circuit pattern on the glass core and the bridge; and a removing step of removing the lower part of the glass core, to manufacture the above-described packaging substrate in which the bridge is embedded.

[0030] The fixing step may be a step of forming an adhesive layer between one surface of the cavity and one surface of the bridge to fix them.

[0031] The glass core may be vertically divided into a first part where the cavity is disposed and a second part where the cavity is not disposed.

[0032] The removing step may be a step of removing a part or all of the second part.

[0033] The glass core may be a joined glass in which a first glass and a second glass are joined.

[0034] The first glass may have a cavity and a core via.

[0035] The second glass may be one in which no through-cavity is provided. [Effects of the Invention]

[0036] The embodiment of the packaging substrate with embedded bridges and the method for manufacturing the same can provide a packaging substrate and a method for manufacturing the same with improved power efficiency, etc., by applying a structure that incorporates bridges into the substrate. Furthermore, it is possible to overcome the processing difficulties of plate glass and provide a method for manufacturing a packaging substrate with bridges incorporated inside the plate glass. [Brief explanation of the drawing]

[0037] [Figure 1A] This is a conceptual diagram illustrating, in cross-section, a glass core applied to a method for manufacturing a packaging substrate in which a bridge according to one embodiment of the present invention is embedded. [Figure 1B] This is a conceptual diagram illustrating, in cross-section, a glass core applied to a method for manufacturing a packaging substrate in which a bridge according to one embodiment of the present invention is embedded. [Figure 2A] This is a conceptual diagram illustrating in cross-section an example of a bridge arranged on a glass core, which is applied to a method for manufacturing a packaging substrate in which a bridge is embedded according to one embodiment of the present invention. [Figure 2B] This is a conceptual diagram illustrating in cross-section another example of a bridge arranged on a glass core, which is applied to a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. [Figure 2C] This is a conceptual diagram illustrating in cross-section another example in which a bridge is arranged on a glass core, which is applied to a method for manufacturing a packaging substrate in which a bridge is embedded according to one embodiment of the present invention. [Figure 3A] This is a conceptual diagram illustrating, in cross-section, an example of a patterning step in a method for manufacturing a packaging substrate in which a bridge according to one embodiment of the present invention is embedded. [Figure 3B]This is a conceptual diagram illustrating, in cross-section, an example of a patterning step in a method for manufacturing a packaging substrate in which a bridge according to one embodiment of the present invention is embedded. [Figure 3C] This is a conceptual diagram illustrating, in cross-section, an example of a patterning step in a method for manufacturing a packaging substrate in which a bridge according to one embodiment of the present invention is embedded. [Figure 3D] This is a conceptual diagram illustrating in cross-section the step of forming an upper insulating cover after the patterning step in a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. [Figure 4] This is a conceptual diagram illustrating in cross-section an example of a removal step applied to a method for manufacturing a packaging substrate in which a bridge according to one embodiment of the present invention is embedded. [Figure 5A] This is a conceptual diagram illustrating an example of a packaging substrate according to one embodiment of the present invention in cross-section. [Figure 5B] This is a conceptual diagram illustrating an example of a packaging substrate according to one embodiment of the present invention in cross-section. [Figure 6] This is a conceptual diagram illustrating in cross-section an example of a packaging substrate on which a die is mounted according to one embodiment of the present invention. [Figure 7A] This is a conceptual diagram illustrating, in cross-section, a glass core applied to a method for manufacturing a packaging substrate in which a bridge according to one embodiment of the present invention is embedded. [Figure 7B] This is a conceptual diagram illustrating, in cross-section, a glass core applied to a method for manufacturing a packaging substrate in which a bridge according to one embodiment of the present invention is embedded. [Figure 8A] This is a conceptual diagram illustrating in cross-section an example of a bridge arranged on a glass core, which is applied to a method for manufacturing a packaging substrate in which a bridge is embedded according to one embodiment of the present invention. [Figure 8B] This is a conceptual diagram illustrating in cross-section another example of a bridge arranged on a glass core, which is applied to a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. [Figure 9A]This is a conceptual diagram illustrating, in cross-section, an example of a patterning step in a method for manufacturing a packaging substrate in which a bridge according to one embodiment of the present invention is embedded. [Figure 9B] This is a conceptual diagram illustrating, in cross-section, an example of a patterning step in a method for manufacturing a packaging substrate in which a bridge according to one embodiment of the present invention is embedded. [Figure 9C] This is a conceptual diagram illustrating, in cross-section, an example of a patterning step in a method for manufacturing a packaging substrate in which a bridge according to one embodiment of the present invention is embedded. [Figure 9D] This is a conceptual diagram illustrating in cross-section the step of forming an upper insulating cover after the patterning step in a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. [Figure 10] This is a conceptual diagram illustrating in cross-section an example of a removal step applied to a method for manufacturing a packaging substrate in which a bridge according to one embodiment of the present invention is embedded. [Figure 11A] This is a conceptual diagram illustrating an example of a packaging substrate according to one embodiment of the present invention in cross-section. [Figure 11B] This is a conceptual diagram illustrating an example of a packaging substrate according to one embodiment of the present invention in cross-section. [Figure 12] This is a conceptual diagram illustrating in cross-section an example of a packaging substrate on which a die is mounted according to one embodiment of the present invention. [Best Mode for Carrying Out the Invention]

[0038] To aid in a comprehensive understanding of the methods, apparatus and / or systems described herein, the following detailed descriptions are provided. However, various changes, modifications, and equivalents of the methods, apparatus and / or systems described herein will become apparent after understanding the content presented in this application. For example, the sequence of operations described herein is merely illustrative and not limited to the operations described herein. Except for steps that always proceed in a specific order, the sequence of operations may be changed according to an understanding of the content presented in this application. Furthermore, descriptions of known features may be omitted to enhance clarity and conciseness after understanding the content disclosed in this application. However, the omission of such features and their descriptions is not intended to be accepted as general knowledge.

[0039] The features described herein may be embodied in different forms and should not be construed as being limited to the examples described herein. Rather, the embodiments described herein are provided to illustrate some of the many possible methods, apparatus and / or systems described herein that will become apparent after understanding the disclosure of this application.

[0040] In this specification, terms such as “first,” “second,” and “third” may be used to describe various members, components, regions, layers, or sections, but these members, components, regions, layers, or sections are not limited to these words. Rather, such terms are used to distinguish one member, component, region, layer, or section from another. Accordingly, a first member, component, region, layer, or section referred to in the examples described herein may also be called a second member, component, region, layer, or section without departing from the teachings of the examples.

[0041] Throughout the specification, when an element such as a layer, region, or substrate is described as being "on top of," "connected to," or "bonded to" another element, it can be described as being directly "on top of," "connected to," or "bonded to" the other element, or one or more other elements may be interposed between them. In contrast, when an element is described as being "directly on top of," "directly connected to," or "directly bonded," no other elements may be interposed between them. Similarly, expressions such as "between" and "directly between," and "in contact" and "in direct contact" may be interpreted as described above.

[0042] The terms used herein are for illustrative purposes only and are not intended to limit disclosure. The singular form used herein is intended to include the plural form unless the context clearly indicates otherwise. The term “and / or” as used herein includes any one or more combinations of the relevant catalog items. The terms “include,” “constitute,” and “equip” as used herein indicate the presence of a specified feature, figure, action, element, component, and / or combination thereof, but do not exclude the presence or addition of one or more other features, figures, actions, elements, components, and / or combinations thereof. In this specification, the use of the term “can” in relation to an example or embodiment (for example, what an example or embodiment includes or can embody) means that there is at least one example or embodiment in which such features are included or embodyed, but not all examples are limited to this.

[0043] In this application, "B being located on A" means that B is in direct contact with A, or that B is placed on A with another layer or structure interposed between them, and therefore should not be interpreted as B being in direct contact with A.

[0044] Unless otherwise defined, all terms used herein have the same meaning as commonly understood by one of the ordinary art in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having the meaning consistent with their meaning in the context of the prior art and the present invention, and should not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0045] Throughout this specification, the term “these combinations” as used in any expression in Markush form means one or more mixtures or combinations selected from the group of components described in the Markush form, and includes one or more of those components.

[0046] In the one or more examples above, the phrase "A and / or B" means "A, B, or A and B."

[0047] In the one or more of the above examples, terms such as "first," "second," "A," or "B" are used to distinguish identical terms from one another.

[0048] In the one or more examples above, "~system" may mean that the compound contains a compound corresponding to "~" or a derivative of "~".

[0049] In the one or more examples above, the singular form is, unless otherwise specified, interpreted contextually to include not only the singular form but also the plural form.

[0050] Method for manufacturing a packaging substrate (1) Figures 1A and 1B are conceptual diagrams illustrating in cross-section a glass core applied to a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figure 2A is a conceptual diagram illustrating in cross-section an example of a bridge being arranged on a glass core applied to a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figure 2B is a conceptual diagram illustrating in cross-section another example of a bridge being arranged on a glass core applied to a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figure 2C is a conceptual diagram illustrating in cross-section yet another example of a bridge being arranged on a glass core applied to a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figures 3A to 3C are conceptual diagrams illustrating in cross-section an example of a patterning step in a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figure 3D is a conceptual diagram illustrating in cross-section a step of forming an upper insulating cover after the patterning step in a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figure 4 is a conceptual diagram illustrating in cross-section an example of a removal step applied to a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figures 5A and 5B are conceptual diagrams illustrating in cross-section an example of a packaging substrate according to one embodiment of the present invention, respectively. Figure 6 is a conceptual diagram illustrating in cross-section an example of a packaging substrate on which a die is mounted according to one embodiment of the present invention. The method for manufacturing a packaging substrate with an embedded bridge will be described below with reference to the above drawings.

[0051] To achieve the above objective, a method for manufacturing a packaging substrate 1 with embedded bridges according to one embodiment of the embodiment provides a method for manufacturing a packaging substrate 1 with embedded bridges, comprising a preparation step, a fixing step, a patterning step, and a removal step.

[0052] The aforementioned preparation step is to provide a glass core 20 having a cavity 24 and a core via 26.

[0053] The glass core 20 is a glass substrate (glass plate) having a first surface and a second surface facing each other, and on which a cavity 24 and core vias 26 are arranged.

[0054] The cavity 24 is either a half-cavity, where a recessed surface is formed in the glass core 20, or a full-cavity, where a portion of the glass plate penetrates through it. In this example, both of these are collectively referred to as cavity 24.

[0055] The core via 26 is a via formed by penetrating the glass plate in the thickness direction of the glass substrate. The core via 26 may have a circular opening, but is not limited to this; the opening may have various shapes such as elliptical or square, and various opening shapes can coexist within a single glass core.

[0056] The core via 26 is a via that penetrates the glass substrate, and may have an electrically conductive layer formed inside or be filled with an electrically conductive material. In this case, the core via 26 is called a through electrode 42.

[0057] The glass core 20 is preferably made of a glass substrate used in semiconductors, and may, but is not limited to, a borosilicate glass substrate or an alkali-free glass substrate.

[0058] The glass core 20 in the preparation step may be relatively thicker than the packaging substrate 1 after the removal step. This is because a portion of the glass core is removed in the removal step, which will be described later. The reason for applying such a thick glass core and removing a portion of it will be explained later.

[0059] The glass core 20 in the preparation step may be a glass plate 22 that has been processed by etching a portion of it to have cavities 24 and core vias 26 (see Figure 1A). Etching the glass plate 22 to form cavities 24 and / or core vias 26 can be carried out exemplary in the following process. First, a glass plate is prepared in which defects are formed at the locations where cavities and / or core vias will be formed. Defect formation may be done using a laser or the like, but is not limited to this. Then, the glass plate is chemically and / or physically etched. Etching allows different parts of the glass plate to be etched at different etching rates, thereby forming vias and cavities in the glass plate. Chemical etching, in particular, has the advantage of allowing the process to proceed more efficiently because cavities and / or core vias can be formed without substantially adding etching time, even when the cavity area is large or the number of core vias is large.

[0060] The glass core 20 in the preparation step may be a glass plate 22 with an electrically conductive layer disposed thereon. Exemplarily, the glass plate 22 may have layers of electrically conductive material disposed on the inner surface of the core vias 26, or the interior of the core vias 26 may be filled with electrically conductive material. A core via 26 in which part or all of the interior is filled with electrically conductive material is called a through electrode 42.

[0061] The glass core 20 in the preparation step may be a bonded glass 23 formed by joining a first glass 23a having a cavity and core vias, and a second glass 23b that substantially does not have a through cavity (full cavity) (see Figure 1B). In this case, the first glass 23a has a cavity and core vias.

[0062] The core via of the first glass 23a may be a through electrode 42. By proceeding with the steps after the preparation step using the first glass 23a having the through electrode 42 in this way, the efficiency of the manufacturing method can be further improved.

[0063] The first glass 23a and the second glass 23b can be applied as the core via 26 in the preparation step in a bonded state. The bonding can be performed by a method of strongly bonding the two glass plates, and may, but is not limited to, an anodic bonding method.

[0064] For example, the glass core 20 in the preparation step may have core via pads 26p positioned at one or both ends of a through electrode 42 placed on the plate glass 22 or the first glass 23a. In this case, the process of forming the integrated electrode 46, which will be described later, can be further simplified.

[0065] The fixing step involves placing the bridge 70 in the cavity 24 and fixing its position. In the figures from Figure 2A onward, the glass core 20 in Figure 1A is used as an example, but the following steps can also be applied to the glass core 20 in Figure 1B.

[0066] The bridge 70 is a structure capable of transmitting electrical signals between two or more dies. The dies are arranged on one surface of a packaging substrate.

[0067] A bridge electrode 74 is positioned on the bridge 70, and the bridge electrode 74 is located inside the bridge 70. The ends of the bridge electrode 74 connect at least two points on one surface of the bridge 70 to each other (see Figures 2A, 2B, etc.).

[0068] The bridge 70 includes a bridge core 72 which is a support; and a bridge electrode 74 disposed inside the bridge core 72 and electrically connecting at least two points on one surface of the bridge 70 to each other. The bridge electrode 74 may have both ends exposed on the surface of the bridge core 72, or a bridge electrode pad 74p connected to the bridge electrode 74 may be exposed on the surface of the bridge core 72.

[0069] Selectively, the bridge 70 may further include bridge electrode pads 74p on the bridge electrode 74. Specifically, the bridge electrode 74 may further include bridge electrode pads 74p positioned on one side of the bridge core 72 so as to be connected to the bridge electrode 74 (see Figure 2C).

[0070] The bridge core 72 may be made of plate-shaped silicon or plate-shaped silicon carbide.

[0071] The bridge electrode 74, bridge electrode pad 74p, etc., may be made of a material applicable to the electrically conductive layer, and, for example, copper or a copper alloy may be used, but is not limited thereto.

[0072] The fixing step is to fix one surface of the cavity 24 and one surface of the bridge 70 so that their positions do not change.

[0073] The aforementioned fixing is performed through the fixing portion 76. The fixing portion 76 physically and / or chemically fixes one surface of the cavity 24 to one surface of the bridge 70.

[0074] Exemplary, the fixing step may include a process of fixing the position through a connecting structure. In such a case, no separate adhesive layer is formed on the underside of the bridge (physical fixing, see Figure 2A).

[0075] Exemplary, the fixing step may include the process of positioning and fixing the adhesive layer (chemical fixing, see Figure 2B). Exemplary, the adhesive layer may be fixed by applying an adhesive to the bonding surface, positioning the bridge 70, and then curing the adhesive. Exemplary, the adhesive layer may also be fixed by positioning an adhesive layer placed on one surface of the bridge and then placing it on one surface of the cavity. The adhesive layer may be, but is not limited to, a silicone-based adhesive layer or an epoxy-based adhesive layer.

[0076] The adhesive layer may be removed from the packaging substrate after the removal step described later. The adhesive layer may remain in the packaging substrate after the removal step described later.

[0077] The patterning step involves arranging the integrated electrodes 46 on the glass core 20 and the bridge 70. An insulating material 45 may be placed in the space between the integrated electrodes 46.

[0078] The integrated electrode 46 is an electrically conductive layer electrically connected to at least one of the through-electrode 42 and the bridge electrode 74. The integrated electrode can be formed by a process of forming redistribution wiring in a semiconductor process.

[0079] The patterning step includes the process of forming the first integrated electrode 46a and the second integrated electrode 46b (see Figures 3A and 3B, respectively).

[0080] The patterning step includes the process of forming the first integrated electrode 46a, the second integrated electrode 46b, and the third integrated electrode 46c (see Figures 3A, 3B, and 3C, respectively).

[0081] The first integrated electrode 46a includes a first vertically conductive layer, a first planar electrically conductive layer, and combinations thereof, which are directly connected to the through electrode 42 or bridge electrode 74. These are also embedded by a first insulating material.

[0082] The second integrated electrode 46b is placed on the first integrated electrode 46a.

[0083] The second integrated electrode 46b includes a second vertically conductive layer, a second planar electrically conductive layer, and combinations thereof, which are connected to the electrically conductive layer of the first integrated electrode 46a. These are also embedded by a second insulating material.

[0084] The third integrated electrode 46c is positioned on the second integrated electrode 46b.

[0085] The third integrated electrode 46c includes a third vertically conductive layer, a third planar electrically conductive layer, and combinations thereof, which are connected to the electrically conductive layer of the second integrated electrode 46b. These are also embedded by a third insulating material.

[0086] A fourth integrated electrode, a fifth integrated electrode, and the like may be selectively formed on the third integrated electrode.

[0087] For example, the process of forming the integrated electrodes of each of the aforementioned layers may be replaced with the process of forming the redistribution layer.

[0088] The glass core 20, which is the support for the packaging substrate 1, is a plate of glass and is prone to breakage. Plate glass can break at its corners or the entire plate due to impact, internal stress, etc.

[0089] Cracking can occur during the process of processing flat glass into packaging substrates. In particular, when forming a redistribution layer on a large area of ​​flat glass, repeated temperature increases and decreases during the manufacturing process can cause stress to concentrate in the glass itself. The patterning step, in particular, involves repeated such processes, and the stressed flat glass can easily be damaged by even small impacts.

[0090] The inventors experimentally confirmed that such cracks tend to occur more easily when the glass plate itself is thin. They also experimentally confirmed that processing is more difficult when a glass core has a cavity. To compensate for this, the inventors used a thicker glass plate in the actual example. In other words, the inventors confirmed that by using a thicker glass core, the occurrence of cracks can be further reduced even when a glass substrate with a cavity is used, and they present an example of this.

[0091] For example, the thickness of the glass core 20 in the preparation step may be 2 or more, 3 or more, 4 or more, 5 or more, or 6 or more times the thickness of the bridge 70. The thickness may also be 15 or less, or 13 or less.

[0092] For example, if the thickness of the bridge 70 is approximately 50 μm to approximately 70 μm, the thickness of the glass core 20 in the preparation step may be approximately 400 μm to approximately 600 μm.

[0093] The patterning step may include the process of embedding insulating material into the glass core 20. The embedding of insulating material may also be performed in the space between the cavity 24 and the bridge 70. The embedding of insulating material may also be performed in the space between the electrically conductive layers of the integrated electrode 46.

[0094] The insulating material may be an organic-inorganic composite material such as ABF (Ajinomoto Build-up Film) or PI film (Polyimide Build-up Film), but is not limited thereto. The insulating material layer may be formed by methods such as laminating an uncured or semi-cured insulating material sheet under reduced pressure and then curing it, but is not limited thereto.

[0095] The electrically conductive layer may be made of copper, a copper alloy, or the like, but is not limited to these. Furthermore, the formation of the electrically conductive layer may be carried out by methods such as plating the necessary areas after the formation of the seed layer, but is not limited to these methods.

[0096] The removal step involves removing the lower part of the glass core 20 (see Figure 4, where the arrow indicates the direction of removal).

[0097] In this case, the lower part of the glass core 20 does not refer to the up or down position, but rather to the opposite side of the layer on which the integrated electrodes were formed in the patterning step.

[0098] By using a glass core 20 with a thickness greater than the cavity height (etched depth), the possibility of damage during the fixing step and the patterning step is reduced, and the process can be carried out stably. However, a thick glass core 20 increases the weight of the packaging substrate itself, which goes against the semiconductor trend of thin films, so it is necessary to reduce its thickness. Therefore, in this example, a removal step is performed.

[0099] The removal step includes etching or grinding the lower part of the glass core 20. The etching may be the physical and / or chemical etching described above. The grinding may, for example, be the Chemical Mechanical Polishing (CMP) process. Grinding is also performed in the patterning step. In the process of forming the redistribution layer, the insulating material layer and the electrically conductive layer are formed by selective plating or the like in a predetermined pattern shape, and grinding is also performed in this process.

[0100] In this example, the glass core 20, after undergoing the patterning step, can be inverted and then ground using the same grinder used in the patterning step.

[0101] The glass core 20, ground in this manner, has a thinner thickness compared to the glass core 20 in the preparation step, and a packaging substrate 1 can be obtained that has a relatively thin thickness and a bridge 70 in the cavity 24.

[0102] The glass core 20 is divided into a portion where the cavity 24 is arranged above and below, and a portion where the cavity 24 is not arranged.

[0103] The removal step involves removing part or all of the portion where the cavity 24 is not located.

[0104] The removal described above is applicable to both cases where the glass core 20 is plate glass and cases where it is bonded glass.

[0105] If the aforementioned removal removes a portion of the area where the cavity 24 is not located, the packaging substrate will have a half-cavity (not shown).

[0106] If the removal process removes all of the portion where the cavity 24 is not located, the packaging substrate will have a full cavity configuration (see Figure 4).

[0107] In the latter case, the first embodiment may involve removing even the fixing portion 76, such as the adhesive layer. Alternatively, the second embodiment may involve leaving the adhesive layer and removing the material to create a full cavity (see Figure 5B).

[0108] In the first embodiment, even if the fixing part 76 is removed, the space between the cavity wall and the bridge 70 can be filled with insulating material or the like to fix it in place, and the position of the bridge 70 can be maintained without changing.

[0109] In the second embodiment, the fixed portion 76 is maintained, and the position of the bridge 70 can be maintained without changing in that state.

[0110] Selectively, the method for manufacturing the packaging substrate may further include an insulating cover forming step after the patterning step and before the removal step; or after the removal step.

[0111] The insulating cover forming step is the step of forming an insulating cover on the integrated electrode 46 and / or under the glass substrate 20.

[0112] When the insulating cover is positioned on the integrated electrode 46, it is referred to as the upper insulating cover 83. The insulating cover may further have an upper connection structure 53, which has openings positioned at predetermined locations and connects to the die to be mounted (see Figures 3D, 5A, and 5B).

[0113] When the insulating cover is placed beneath the glass substrate 20, it is referred to as the lower insulating cover 85. The insulating cover has openings at predetermined positions, and a lower connection structure 55 may be further provided. The lower connection 55 may, but is not limited to, solder balls or the like (see Figures 5A and 5B).

[0114] The method for manufacturing a packaging substrate may further include a bonding step after the removal step.

[0115] The coupling step involves placing the die 30 on the packaging substrate 1 and electrically connecting the circuit pattern 40 and the die 30. This connection includes not only direct connections but also indirect connections via other structures. The circuit pattern 40 collectively refers to the through-electrode 42, the bridge electrode 74, and the integrated electrode 46.

[0116] The two or more dies 30 include a first die 30a and a second die 30b, and the coupling step involves mounting the first die 30a and the second die 30b at predetermined positions on the packaging substrate 1. Although the drawing illustrates the arrangement of two dies, it is not limited to this, and two or more, three or more, or four or more dies may be arranged on a single unit of the packaging substrate 1.

[0117] In other words, the packaging substrate 1 may further include a first die 30a and a second die 30b arranged on an integrated electrode 46. The packaging substrate 1 incorporates a bridge 70, which allows electrical signals to be transmitted between the first die 30a and the second die 30b via the bridge electrode 74.

[0118] The method for manufacturing a packaging substrate may further include a sealing step after the bonding step.

[0119] The sealing step involves placing a lead frame 87 on the die side of the packaging substrate 1 on which the die is mounted, and filling the space within the lead frame 87 with a sealing material 81 (see Figure 6). This fixes the position of the die on the packaging substrate, providing a stabilized packaging substrate 1.

[0120] A packaging substrate (1) with an embedded bridge. Figures 5A and 5B are conceptual diagrams illustrating, in cross-section, an example of a packaging substrate according to one embodiment of the present invention, and Figure 6 is a conceptual diagram illustrating, in cross-section, an example of a packaging substrate on which a die is mounted according to one embodiment of the present invention. Referring to Figures 5A to 6, the packaging substrate with the embedded bridge will be described in detail below.

[0121] A packaging substrate 1 with an embedded bridge according to one embodiment includes: a glass core 20 having a cavity 24 and through electrodes 42; a bridge 70 disposed in the cavity 24; integrated electrodes 46 disposed on one surface of the bridge 70 and one surface of the glass core 20; and insulating material 45 disposed between the glass core 20 and the bridge 70 and between the integrated electrodes 46.

[0122] The glass core 20 is a glass substrate (glass plate) having a first surface and a second surface facing each other, and on which a cavity 24 and core vias 26 are arranged.

[0123] The cavity 24 is either a half-cavity, where a recessed surface is formed in the glass core 20, or a full-cavity, where a portion of the glass plate penetrates through it. In this example, both of these are collectively referred to as cavity 24.

[0124] The core via 26 is a via formed by penetrating the glass plate in the thickness direction of the glass substrate. The core via 26 may have a circular opening, but is not limited to this; the opening may have various shapes such as elliptical or square, and various opening shapes can coexist within a single glass core.

[0125] The core via 26 is a via that penetrates the glass substrate, and may have an electrically conductive layer formed inside or be filled with an electrically conductive material. In this case, the core via 26 is called a through electrode 42.

[0126] The glass core 20 is preferably made of a glass substrate used in semiconductors, and may, but is not limited to, a borosilicate glass substrate or an alkali-free glass substrate.

[0127] The integrated electrode 46 is an electrically conductive layer electrically connected to at least one of the through electrode 42 and the bridge electrode 74. The integrated electrode 46 is an electrically conductive layer arranged in a predetermined pattern, while being connected substantially vertically or horizontally.

[0128] An insulating material 45 may be placed in the space between the integrated electrodes 46.

[0129] The integrated electrode 46 includes a first integrated electrode 46a disposed on the glass core 20 or the bridge 70; and a second integrated electrode 46b disposed on the first integrated electrode 46a.

[0130] The first integrated electrode 46a includes a first vertically conductive layer directly connected to the through electrode 42 or bridge electrode 74, a first planar conductive layer connected to the first vertically conductive layer and having a pattern that extends in the planar direction, and combinations thereof.

[0131] The second integrated electrode 46b includes a second vertically conductive layer connected to the electrically conductive layer of the first integrated electrode 46a, a second planar electrically conductive layer connected to the second vertically conductive layer and having a pattern that extends in the planar direction, and combinations thereof.

[0132] The integrated electrode 46 may include a third integrated electrode 46c positioned on the second integrated electrode 46b.

[0133] The third integrated electrode 46c includes a third vertically conductive layer connected to the electrically conductive layer of the second integrated electrode 46b, a third planar electrically conductive layer connected to the third vertically conductive layer and having a pattern that extends in the planar direction, and combinations thereof.

[0134] The bridge 70 includes a bridge core 72 which is a support; and a bridge electrode 74 which is disposed inside the bridge core 72 and electrically connects at least two points on one surface of the bridge 70 to each other, with both ends exposed on the surface of the bridge core 72.

[0135] The bridge 70 is a structure capable of transmitting electrical signals between two or more dies. The dies are arranged on one side of the packaging substrate.

[0136] A bridge electrode 74 is positioned on the bridge 70, and the bridge electrode 74 is located inside the bridge 70. The ends of the bridge electrode 74 connect at least two points on one surface of the bridge 70 to each other.

[0137] The bridge 70 includes a bridge core 72 which is a support; and a bridge electrode 74 disposed inside the bridge core 72 and electrically connecting at least two points on one surface of the bridge 70 to each other. The bridge electrode 74 may have both ends exposed on the surface of the bridge core 72, or a bridge electrode pad 74p connected to the bridge electrode 74 may be exposed on the surface of the bridge core 72.

[0138] The bridge 70 may further optionally include through-bridge electrodes that penetrate the bridge core 72 vertically and electrically connect to it. When the bridge 70 further includes through-bridge electrodes, electrically conductive layers of various structures can be arranged in an even smaller area, making the packaging substrate more compact and efficient.

[0139] Selectively, the bridge 70 may have bridge electrode pads 74p further positioned on the bridge electrode 74 and / or the through-bridge electrode.

[0140] Specifically, the bridge electrode 74 may further include a bridge electrode pad 74p positioned on one surface of the bridge core 72 so as to be connected to the bridge electrode 74.

[0141] Specifically, the through-bridge electrode may further include a bridge electrode pad 74p positioned above or below the bridge core 72 so as to be connected to the through-bridge electrode.

[0142] The bridge core 72 may be made of plate-shaped silicon (Si) or plate-shaped silicon carbide (SiC).

[0143] The bridge electrode 74, through-bridge electrode 74t, bridge electrode pad 74p, etc., may be made of materials applicable to the electrically conductive layer, and, for example, copper or a copper alloy may be used, but is not limited thereto.

[0144] The fixing portion 76 may be located at the lower part of the bridge 70.

[0145] The lower part of the cavity 24 may further include a fixing portion 76, which may be positioned opposite the integrated electrode 46 across the bridge 70.

[0146] The fixing portion 76 may be part of the bonding structure or it may be an adhesive layer. The adhesive layer may be a silicone-based adhesive layer, an epoxy-based adhesive layer, or the like, but is not limited to these.

[0147] An upper insulating cover 83 may be placed on top of the integrated electrode 46.

[0148] A lower insulating cover 85 may be placed below the glass core 20.

[0149] The fixing portion 76 can be located between the bridge 70 and the lower insulating cover 85, and exemplary, the fixing portion 76 may be an adhesive layer.

[0150] The upper insulating cover 83 has an opening, on which the upper connecting structure 53 can be positioned.

[0151] The lower insulating cover 85 has an opening below which a lower connection structure 55 may be located, and a solder ball may be located therein, for example.

[0152] The packaging substrate 1 may further include a first die 30a and a second die 30b arranged on the integrated electrode 46. A number of dies are collectively referred to as a die.

[0153] The die may be exemplified by a semiconductor element, and may also be an computing element such as a CPU or GPU, or a memory element such as memory.

[0154] Communication between the first die 30a and the second die 30b can be performed smoothly via the bridge 70 built into the packaging substrate 1, resulting in a faster response speed and lower power consumption. Furthermore, since the bridge 70 has through-bridge electrodes 74t that penetrate from above and below, smoother signal transmission and more efficient integration are possible.

[0155] A sealing material 81 covering the first die 30a and the second die 30b; and a lead frame 87 surrounding the sealing material 81; may be further arranged on the packaging substrate 1. The sealing material and the lead frame can be applied without limitation to the sealing material and lead frame applied to the packaging substrate.

[0156] The packaging substrate 1 with the aforementioned embedded bridge applies the bridge 70 to the cavity 24 of the glass core 20, providing a glass core-based packaging substrate that enables bridge connection of the die in a compact size. While realizing bridge connection, it has the advantage of utilizing the glass core, which can be used as an insulating substrate and a support for fine wires. At the same time, by utilizing the brittle glass core, a relatively thin packaging substrate 1 with a cavity structure can be manufactured with high reliability.

[0157] Method for manufacturing a packaging substrate (2) Figures 7A and 7B are conceptual diagrams illustrating in cross-section an example of a glass core applied to a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figure 8A is a conceptual diagram illustrating in cross-section an example of a bridge being arranged on a glass core applied to a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figure 8B is a conceptual diagram illustrating in cross-section another example of a bridge being arranged on a glass core applied to a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figures 9A to 9C are conceptual diagrams illustrating in cross-section an example of the patterning step in a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figure 9D is a conceptual diagram illustrating in cross-section an example of the step of forming an upper insulating cover after the patterning step in a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figure 10 is a conceptual diagram illustrating in cross-section an example of the removal step applied to a method for manufacturing a packaging substrate with an embedded bridge according to one embodiment of the present invention. Figures 11A and 11B are conceptual diagrams illustrating in cross-section an example of a packaging substrate according to one embodiment of the present invention. Referring to the aforementioned drawings, a method for manufacturing a packaging substrate with embedded bridges will be described below.

[0158] To achieve the above objective, a method for manufacturing a packaging substrate 1 with embedded bridges, according to one embodiment of the concrete example, includes a preparation step, a fixing step, a patterning step, and a removal step, and provides a method for manufacturing a packaging substrate 1 with embedded bridges, as described later.

[0159] The aforementioned preparation step is to provide a glass core 20 having a cavity 24 and a core via 26.

[0160] The glass core 20 is a glass substrate (glass plate) having a first surface and a second surface facing each other, and on which a cavity 24 and core vias 26 are arranged.

[0161] The cavity 24 is either a half-cavity, where a recessed surface is formed in the glass core 20, or a full-cavity, where a portion of the glass plate penetrates through it. In this example, both of these are collectively referred to as cavity 24.

[0162] The core via 26 is a via formed by penetrating the glass plate in the thickness direction of the glass substrate. The core via 26 may have a circular opening, but is not limited to this; the opening may have various shapes such as elliptical or square, and various opening shapes can coexist within a single glass core.

[0163] The core via 26 is a via that penetrates the glass substrate, and may have an electrically conductive layer formed inside or be filled with an electrically conductive material. In this case, the core via 26 is called a through electrode 42.

[0164] The glass core 20 is preferably made of a glass substrate used in semiconductors, and may, but is not limited to, a borosilicate glass substrate or an alkali-free glass substrate.

[0165] The glass core 20 in the preparation step may be relatively thicker than the packaging substrate 1 after the removal step. This is because a portion of the glass core is removed in the removal step, which will be described later. The reason for applying such a thick glass core and removing a portion of it will be explained later.

[0166] The glass core 20 in the preparation step may be a glass plate 22 that has been processed so that a portion of it is etched to have cavities 24 and core vias 26 (see Figure 7A). Etching the glass plate 22 to form cavities 24 and / or core vias 26 can be carried out exemplary in the following process. First, a glass plate is prepared in which defects are formed at the locations where cavities and / or core vias will be formed. Defect formation may be done using a laser or the like, but is not limited to this. Then, the glass plate is chemically and / or physically etched. Etching allows different parts of the glass plate to be etched at different etching rates, thereby forming vias and cavities in the glass plate. Chemical etching, in particular, has the advantage of allowing the process to proceed more efficiently because cavities and / or core vias can be formed without substantially adding etching time, even when the cavity area is large or the number of core vias is large.

[0167] The glass core 20 in the preparation step may be a glass plate 22 with an electrically conductive layer disposed thereon. Exemplarily, the glass plate 22 may have layers of electrically conductive material disposed on the inner surface of the core vias 26, or the interior of the core vias 26 may be filled with electrically conductive material. A core via 26 in which part or all of the interior is filled with electrically conductive material is called a through electrode 42.

[0168] The glass core 20 in the preparation step may be a bonded glass 23 formed by joining a first glass 23a having a cavity and core vias, and a second glass 23b that substantially does not have a through cavity (full cavity) (see Figure 7B). In this case, the first glass 23a has a cavity and core vias.

[0169] The core via of the first glass 23a may be a through electrode 42. By proceeding with the steps after the preparation step using the first glass 23a having the through electrode 42 in this way, the efficiency of the manufacturing method can be further improved.

[0170] The first glass 23a and the second glass 23b can be applied as the glass core 20 in the preparation step in a bonded state. The bonding can be performed by a method of strongly bonding two glass plates, and may, but is not limited to, an anodic bonding method.

[0171] For example, the glass core 20 in the preparation step may have core via pads 26p positioned at one or both ends of a through electrode 42 placed on the plate glass 22 or the first glass 23a. In this case, the process of forming the integrated electrode 46, which will be described later, can be further simplified.

[0172] The fixing step involves placing the bridge 70 in the cavity 24 and fixing its position. In the figures from Figure 8A onward, the glass core 20 in Figure 7A is used as an example, but the following steps can also be applied to the glass core 20 in Figure 7B.

[0173] The bridge 70 is a structure capable of transmitting electrical signals between two or more dies. The dies are arranged on one surface of a packaging substrate.

[0174] A bridge electrode 74 is positioned on the bridge 70, and the bridge electrode 74 is located inside the bridge 70. The ends of the bridge electrode 74 connect at least two points on one surface of the bridge 70 to each other.

[0175] The bridge 70 includes a bridge core 72 which is a support; and internal bridge electrodes 74a disposed inside the bridge core 72 and electrically connecting at least two points on one surface of the bridge 70 to each other. The internal bridge electrodes 74a may have both ends exposed on the surface of the bridge core 72, or a bridge electrode pad 74p connected to the internal bridge electrodes 74a may be exposed on the surface of the bridge core 72.

[0176] The bridge 70 may further include through-bridge electrodes 74t that penetrate the bridge core 72 vertically and electrically connect to it. When the bridge 70 further includes through-bridge electrodes 74t, various electrically conductive layers can be arranged in an even smaller area, making the packaging substrate more compact and efficient.

[0177] Selectively, the bridge 70 may have bridge electrode pads 74p further positioned on the internal bridge electrode 74a and / or the through-bridge electrode 74t.

[0178] Specifically, the internal bridge electrode 74a may further include a bridge electrode pad 74p positioned on one surface of the bridge core 72 so as to be connected to the internal bridge electrode 74a.

[0179] Specifically, the through-bridge electrode 74t may further include a bridge electrode pad 74p positioned above or below the bridge core 72 so as to be connected to the through-bridge electrode 74t.

[0180] The bridge core 72 may be made of plate-shaped silicon or plate-shaped silicon carbide.

[0181] The bridge internal electrode 74a, bridge through electrode 74t, bridge electrode pad 74p, etc., may be made of materials applicable to the electrically conductive layer, and, for example, copper or a copper alloy may be used, but is not limited thereto.

[0182] The fixing step is to fix one surface of the cavity 24 and one surface of the bridge 70 so that their positions do not change.

[0183] The aforementioned fixing is performed through the fixing portion 76. The fixing portion 76 physically and / or chemically fixes one surface of the cavity 24 to one surface of the bridge 70.

[0184] Exemplary, the fixing step may include a process of fixing the position through a connecting structure. In such a case, no separate adhesive layer is formed on the underside of the bridge (physical fixing, see Figure 8A).

[0185] Exemplary, the fixing step may include the process of arranging and fixing the adhesive layer (chemical fixing, see Figure 8B). Exemplary, the adhesive layer may be fixed by applying an adhesive to the bonding surface, arranging the bridge 70, and then curing the adhesive. Exemplary, the adhesive layer may also be fixed by arranging an adhesive layer placed on one surface of the bridge on one surface of the cavity. The adhesive layer may be, but is not limited to, a silicone-based adhesive layer, an epoxy-based adhesive layer, etc.

[0186] The adhesive layer may be removed from the packaging substrate after the removal step described later. The adhesive layer may remain in the packaging substrate after the removal step described later.

[0187] The patterning step involves arranging the integrated electrodes 46 on the glass core 20 and the bridge 70. An insulating material 45 may be placed in the space between the integrated electrodes 46.

[0188] The integrated electrode 46 is an electrically conductive layer electrically connected to at least one of the through-electrode 42, the bridge internal electrode 74a, and the bridge through-electrode 74t. The integrated electrode can be formed by a process of forming redistribution wiring in a semiconductor process.

[0189] The patterning step includes the process of forming the first integrated electrode 46a and the second integrated electrode 46b (see Figures 9A and 9B, respectively).

[0190] The patterning step includes the process of forming the first integrated electrode 46a, the second integrated electrode 46b, and the third integrated electrode 46c (see Figures 9A, 9B, and 9C, respectively).

[0191] The first integrated electrode 46a includes a first vertically conductive layer, a first planar electrically conductive layer, and combinations thereof, which are directly connected to the through electrode 42 or bridge electrode 74. These are also embedded by a first insulating material.

[0192] The second integrated electrode 46b is placed on the first integrated electrode 46a.

[0193] The second integrated electrode 46b includes a second vertically conductive layer, a second planar electrically conductive layer, and combinations thereof, which are connected to the electrically conductive layer of the first integrated electrode 46a. These are also embedded by a second insulating material.

[0194] The third integrated electrode 46c is positioned on the second integrated electrode 46b.

[0195] The third integrated electrode 46c includes a third vertically conductive layer, a third planar electrically conductive layer, and combinations thereof, which are connected to the electrically conductive layer of the second integrated electrode 46b. These are also embedded by a third insulating material.

[0196] A fourth integrated electrode, a fifth integrated electrode, and the like may be selectively formed on the third integrated electrode.

[0197] For example, the process of forming the integrated electrodes of each of the aforementioned layers may be replaced with the process of forming the redistribution layer.

[0198] The glass core 20, which is the support for the packaging substrate 1, is a plate of glass and is prone to breakage. Plate glass can break at its corners or the entire plate due to impact, internal stress, etc.

[0199] Cracking can occur during the process of processing flat glass into packaging substrates. In particular, when forming a redistribution layer on a large area of ​​flat glass, repeated temperature increases and decreases during the manufacturing process can cause stress to concentrate in the glass itself. The patterning step, in particular, involves repeated such processes, and the stressed flat glass can easily be damaged by even small impacts.

[0200] The inventors experimentally confirmed that such cracks tend to occur more easily when the glass plate itself is thin. They also experimentally confirmed that processing is more difficult when a glass core has a cavity. To compensate for this, the inventors used a thicker glass plate in the actual example. In other words, the inventors confirmed that by using a thicker glass core, the occurrence of cracks can be further reduced even when a glass substrate with a cavity is used, and they present an example of this.

[0201] For example, the thickness of the glass core 20 in the preparation step may be 2 or more, 3 or more, 4 or more, 5 or more, or 6 or more times the thickness of the bridge 70. The thickness may also be 15 or less, or 13 or less.

[0202] For example, if the thickness of the bridge 70 is approximately 50 μm to approximately 70 μm, the thickness of the glass core 20 in the preparation step may be approximately 400 μm to approximately 600 μm.

[0203] The patterning step may include the process of embedding insulating material into the glass core 20. The embedding of insulating material may also be performed in the space between the cavity 24 and the bridge 70. The embedding of insulating material may also be performed in the space between the electrically conductive layers of the integrated electrode 46.

[0204] The insulating material may be an organic-inorganic composite material such as ABF (Ajinomoto Build-up Film) or PI film (Polyimide Build-up Film), but is not limited thereto. The insulating material layer may be formed by methods such as laminating an uncured or semi-cured insulating material sheet under reduced pressure and then curing it, but is not limited thereto.

[0205] The electrically conductive layer may be made of copper, a copper alloy, or the like, but is not limited to these. Furthermore, the formation of the electrically conductive layer may be carried out by methods such as plating the necessary areas after the formation of the seed layer, but is not limited to these methods.

[0206] The removal step involves removing the lower part of the glass core 20 (see Figure 10, where the arrow indicates the direction of removal).

[0207] In this case, the lower part of the glass core 20 does not refer to the up or down position, but rather to the opposite side of the layer on which the integrated electrodes were formed in the patterning step.

[0208] By using a glass core 20 with a thickness greater than the cavity height (etched depth), the possibility of damage during the fixing step and the patterning step is reduced, and the process can be carried out stably. However, a thick glass core 20 increases the weight of the packaging substrate itself, which goes against the semiconductor trend of thin films, so it is necessary to reduce its thickness. Therefore, in this example, a removal step is performed.

[0209] The removal step includes etching or grinding the lower part of the glass core 20. The etching may be the physical and / or chemical etching described above. The grinding may, for example, be the Chemical Mechanical Polishing (CMP) process. Grinding is also performed in the patterning step. In the process of forming the redistribution layer, the insulating material layer and the electrically conductive layer are formed by selective plating or the like in a predetermined pattern shape, and grinding is also performed in this process.

[0210] In this example, the glass core 20, after undergoing the patterning step, can be inverted and then ground using the same grinder used in the patterning step.

[0211] The glass core 20, ground in this manner, has a thinner thickness compared to the glass core 20 in the preparation step, and a packaging substrate 1 can be obtained that has a relatively thin thickness and a bridge 70 in the cavity 24.

[0212] The glass core 20 is divided into a portion where the cavity 24 is arranged above and below, and a portion where the cavity 24 is not arranged.

[0213] The removal step involves removing part or all of the portion where the cavity 24 is not located.

[0214] The removal described above is applicable to both cases where the glass core 20 is plate glass and cases where it is bonded glass.

[0215] If the aforementioned removal removes a portion of the area where the cavity 24 is not located, the packaging substrate will have a half-cavity (not shown).

[0216] If the removal process removes all of the portion where the cavity 24 is not located, the packaging substrate will have a full cavity configuration (see Figure 10).

[0217] In the latter case, the first form may involve removing even the fixing portion 76, such as the adhesive layer (see Figure 11A). Alternatively, the second form may involve leaving the adhesive layer and removing the material to create a full cavity (see Figure 11B).

[0218] In the first embodiment, even if the fixing part 76 is removed, the space between the cavity wall and the bridge 70 can be filled with insulating material or the like to fix it in place, and the position of the bridge 70 can be maintained without changing.

[0219] In the second embodiment, the fixed portion 76 is maintained, and the position of the bridge 70 can be maintained without changing in that state.

[0220] Selectively, the method for manufacturing the packaging substrate may further include an insulating cover forming step after the patterning step and before the removal step; or after the removal step.

[0221] The insulating cover forming step is the step of forming an insulating cover on the integrated electrode 46 and / or under the glass substrate 20.

[0222] When the insulating cover is positioned on the integrated electrode 46, it is referred to as the upper insulating cover 83. The insulating cover may further have an upper connection structure 53, which has openings positioned at predetermined locations and connects to the die to be mounted (see Figures 9D, 11A, and 11B).

[0223] When the insulating cover is placed beneath the glass substrate 20, it is referred to as the lower insulating cover 85. The insulating cover has openings at predetermined positions, and a lower connection structure 55 may be further provided. The lower connection 55 may, for example, be a solder ball or the like, but is not limited thereto (see Figures 11A and 11B).

[0224] The method for manufacturing a packaging substrate may further include a bonding step after the removal step.

[0225] The coupling step involves placing the die 30 on the packaging substrate 1 and electrically connecting the circuit pattern 40 and the die 30. This connection includes not only direct connections but also indirect connections via other structures. The circuit pattern 40 collectively refers to the through-electrode 42, the bridge electrode 74, and the integrated electrode 46.

[0226] The two or more dies 30 include a first die 30a and a second die 30b, and the coupling step involves mounting the first die 30a and the second die 30b at predetermined positions on the packaging substrate 1. Although the drawing illustrates the arrangement of two dies, it is not limited to this, and two or more, three or more, or four or more dies may be arranged on a single unit of the packaging substrate 1.

[0227] In other words, the packaging substrate 1 may further include a first die 30a and a second die 30b arranged on an integrated electrode 46. The packaging substrate 1 incorporates a bridge 70, which allows electrical signals to be transmitted between the first die 30a and the second die 30b via the internal electrode 74a of the bridge.

[0228] The method for manufacturing a packaging substrate may further include a sealing step after the bonding step.

[0229] The sealing step involves placing a lead frame 87 on the die side of the packaging substrate 1 on which the die is mounted, and filling the space within the lead frame 87 with a sealing material 81 (see Figure 12). This fixes the position of the die on the packaging substrate, providing a stabilized packaging substrate 1.

[0230] Packaging substrate with embedded bridge (2) Figures 11A and 11B are conceptual diagrams illustrating, in cross-section, an example of a packaging substrate according to one embodiment of the present invention, and Figure 12 is a conceptual diagram illustrating, in cross-section, an example of a packaging substrate on which a die is mounted according to one embodiment of the present invention. Referring to Figures 11A to 12, the packaging substrate with the embedded bridge will be described in detail below.

[0231] A packaging substrate 1 with an embedded bridge according to one embodiment includes: a glass core 20 having a cavity 24 and through electrodes 42; a bridge 70 disposed in the cavity 24; integrated electrodes 46 disposed on one surface of the bridge 70 and one surface of the glass core 20; and insulating material 45 disposed between the glass core 20 and the bridge 70 and between the integrated electrodes 46.

[0232] The glass core 20 is a glass substrate (glass plate) having a first surface and a second surface facing each other, and on which a cavity 24 and core vias 26 are arranged.

[0233] The cavity 24 is either a half-cavity, where a recessed surface is formed in the glass core 20, or a full-cavity, where a portion of the glass plate penetrates through it. In this example, both of these are collectively referred to as cavity 24.

[0234] The core via 26 is a via formed by penetrating the glass plate in the thickness direction of the glass substrate. The core via 26 may have a circular opening, but is not limited to this; the opening may have various shapes such as elliptical or square, and various opening shapes can coexist within a single glass core.

[0235] The core via 26 is a via that penetrates the glass substrate, and may have an electrically conductive layer formed inside or be filled with an electrically conductive material. In this case, the core via 26 is called a through electrode 42.

[0236] The glass core 20 is preferably made of a glass substrate used in semiconductors, and may, but is not limited to, a borosilicate glass substrate or an alkali-free glass substrate.

[0237] The integrated electrode 46 is an electrically conductive layer electrically connected to at least one of the through electrode 42, the bridge internal electrode 74a, and the bridge through electrode 74t. The integrated electrode 46 is an electrically conductive layer arranged in a predetermined pattern, while being connected substantially vertically or horizontally.

[0238] An insulating material 45 may be placed in the space between the integrated electrodes 46.

[0239] The integrated electrode 46 includes a first integrated electrode 46a disposed on the glass core 20 or the bridge 70; and a second integrated electrode 46b disposed on the first integrated electrode 46a.

[0240] The first integrated electrode 46a includes a first vertically conductive layer directly connected to the through electrode 42 or bridge electrode 74, a first planar conductive layer connected to the first vertically conductive layer and having a pattern that extends in the planar direction, and combinations thereof.

[0241] The second integrated electrode 46b includes a second vertically conductive layer connected to the electrically conductive layer of the first integrated electrode 46a, a second planar electrically conductive layer connected to the second vertically conductive layer and having a pattern that extends in the planar direction, and combinations thereof.

[0242] The integrated electrode 46 may include a third integrated electrode 46c positioned on the second integrated electrode 46b.

[0243] The third integrated electrode 46c includes a third vertically conductive layer connected to the electrically conductive layer of the second integrated electrode 46b, a third planar electrically conductive layer connected to the third vertically conductive layer and having a pattern that extends in the planar direction, and combinations thereof.

[0244] The bridge 70 includes a bridge core 72 which is a support; an internal bridge electrode 74a disposed inside the bridge core 72, electrically connecting at least two points on one surface of the bridge 70 to each other, with both ends exposed on the surface of the bridge core 72; and a through-bridge electrode 74t that penetrates the bridge core 72 vertically and electrically connects to it.

[0245] The bridge 70 is a structure capable of transmitting electrical signals between two or more dies. The dies are arranged on one side of the packaging substrate.

[0246] A bridge electrode 74 is positioned on the bridge 70, and the bridge electrode 74 is located inside the bridge 70. The ends of the bridge electrode 74 connect at least two points on one surface of the bridge 70 to each other.

[0247] The bridge 70 includes a bridge core 72 which is a support; and internal bridge electrodes 74a disposed inside the bridge core 72 and electrically connecting at least two points on one surface of the bridge 70 to each other. The internal bridge electrodes 74a may have both ends exposed on the surface of the bridge core 72, or a bridge electrode pad 74p connected to the internal bridge electrodes 74a may be exposed on the surface of the bridge core 72.

[0248] The bridge 70 may further include through-bridge electrodes 74t that penetrate the bridge core 72 vertically and electrically connect to it. When the bridge 70 further includes through-bridge electrodes 74t, various electrically conductive layers can be arranged in an even smaller area, making the packaging substrate more compact and efficient.

[0249] Selectively, the bridge 70 may have bridge electrode pads 74p further positioned on the internal bridge electrode 74a and / or the through-bridge electrode 74t.

[0250] Specifically, the internal bridge electrode 74a may further include a bridge electrode pad 74p positioned on one surface of the bridge core 72 so as to be connected to the internal bridge electrode 74a.

[0251] Specifically, the through-bridge electrode 74t may further include a bridge electrode pad 74p positioned above or below the bridge core 72 so as to be connected to the through-bridge electrode 74t.

[0252] The bridge core 72 may be made of plate-shaped silicon (Si) or plate-shaped silicon carbide (SiC).

[0253] The bridge internal electrode 74a, bridge through electrode 74t, bridge electrode pad 74p, etc., may be made of materials applicable to the electrically conductive layer, and, for example, copper or a copper alloy may be used, but is not limited thereto.

[0254] The fixing portion 76 may be located at the lower part of the bridge 70.

[0255] The lower part of the cavity 24 may further include a fixing portion 76, which may be positioned opposite the integrated electrode 46 across the bridge 70.

[0256] The fixing portion 76 may be part of the bonding structure or it may be an adhesive layer. The adhesive layer may be a silicone-based adhesive layer, an epoxy-based adhesive layer, or the like, but is not limited to these.

[0257] An upper insulating cover 83 may be placed on top of the integrated electrode 46.

[0258] A lower insulating cover 85 may be placed below the glass core 20.

[0259] The fixing portion 76 can be located between the bridge 70 and the lower insulating cover 85, and exemplary, the fixing portion 76 may be an adhesive layer.

[0260] The upper insulating cover 83 has an opening, on which the upper connecting structure 53 can be positioned.

[0261] The lower insulating cover 85 has an opening below which a lower connection structure 55 may be located, and a solder ball may be located therein, for example.

[0262] The packaging substrate 1 may further include a first die 30a and a second die 30b arranged on the integrated electrode 46. A number of dies are collectively referred to as a die.

[0263] The die may be exemplified by a semiconductor element, and may also be an computing element such as a CPU or GPU, or a memory element such as memory.

[0264] Communication between the first die 30a and the second die 30b can be performed smoothly via the bridge 70 built into the packaging substrate 1, resulting in a faster response speed and lower power consumption. Furthermore, since the bridge 70 has through-bridge electrodes 74t that penetrate from above and below, smoother signal transmission and more efficient integration are possible.

[0265] A sealing material 81 covering the first die 30a and the second die 30b; and a lead frame 87 surrounding the sealing material 81; may be further arranged on the packaging substrate 1. The sealing material and the lead frame can be applied without limitation to the sealing material and lead frame applied to the packaging substrate.

[0266] The packaging substrate 1 embedded with the above-described bridge applies the bridge 70 to the cavity 24 of the glass core 20 to provide a glass-core-based packaging substrate that enables connection of the die bridge in a compact size. While embodying the bridge connection, it utilizes the glass core and has the advantages of being able to utilize the characteristics of the insulating substrate possessed by the glass core and as a support for fine conductors. At the same time, by utilizing the brittle glass core, the packaging substrate 1 with a relatively thin cavity structure can be manufactured with high reliability.

[0267] Although the preferred embodiments of the present invention have been described in detail above, the scope of the rights of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concept of the present invention defined in the appended claims also belong to the scope of the rights of the present invention.

Explanation of Reference Numerals

[0268] 1 Packaging substrate 20 Glass core​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​81 Sealing material 87 Lead frame 46a First integrated electrode 46b Second integrated electrode 46c Third integrated electrode 45 Insulating material

Claims

1. A glass core having a cavity and through electrodes, A bridge placed in the cavity, An integrated electrode disposed on one surface of the bridge and one surface of the glass core, The glass core and the bridge, and the integrated electrodes include an insulating material disposed between them, The aforementioned bridge, The bridge core is the support structure, The bridge electrodes are disposed inside the bridge core and electrically connect at least two points on one surface of the bridge, with both ends exposed on the surface of the bridge core. The integrated electrode is an electrically conductive layer electrically connected to at least one of the through-electrode and the bridge electrode, and the packaging substrate has a bridge embedded in it.

2. The lower part of the cavity further includes a fixing portion, The packaging substrate in which the bridge according to claim 1 is embedded is arranged such that the fixing portion is positioned opposite the integrated electrode with the bridge in between.

3. The packaging substrate includes a first die and a second die arranged on the integrated electrode, A packaging substrate in which the bridge according to claim 1 is embedded, wherein an electrical signal is transmitted between the first die and the second die via the bridge electrode.

4. The aforementioned integrated electrode is A first integrated electrode disposed on the glass core or the bridge, The system includes a second integrated electrode placed on the first integrated electrode, The first integrated electrode includes a first vertically conductive layer, a first planar electrically conductive layer, and a combination thereof, which are directly connected to the through electrode or bridge electrode. The packaging substrate in which the bridge according to claim 1 is embedded, wherein the second integrated electrode includes a second vertically conductive layer connected to the electrically conductive layer of the first integrated electrode, a second planar electrically conductive layer, and a combination thereof.

5. A lower insulating cover is positioned below the glass core. The fixing portion is located between the bridge and the lower insulating cover. The packaging substrate in which the bridge according to claim 1 is embedded, wherein the fixing portion includes an adhesive layer.

6. A packaging substrate in which the bridge according to claim 3 is embedded, wherein a sealing material covering the first die and the second die and a lead frame surrounding the sealing material are further arranged on the packaging substrate.

7. The bridge further includes a bridge through electrode that penetrates the bridge core vertically, The packaging substrate with an embedded bridge according to claim 1, wherein the integrated electrode is an electrically conductive layer electrically connected to at least one of the through electrode, the bridge electrode, and the bridge through electrode.

8. The bridge core comprises a plate-shaped silicon or plate-shaped silicon carbide, and the packaging substrate in which the bridge according to claim 1 is embedded is also provided.

9. Includes a third integrated electrode placed on the second integrated electrode, The third integrated electrode comprises a third vertically conductive layer connected to the electrically conductive layer of the second integrated electrode, a third planar electrically conductive layer, and a combination thereof, wherein the bridge embedded in the packaging substrate is according to claim 4.

10. The bridge-embedded packaging substrate according to claim 7, further comprising a bridge electrode pad positioned above or below the bridge core.

11. The packaging substrate with the bridge embedded according to claim 1, wherein the through-electrode is arranged in a core via which a via penetrates the glass core, and the glass core is a plate glass etched to have the cavity and the core via.

12. A preparation step for providing a glass core having a cavity and core vias, A fixing step for placing the bridge in the cavity and fixing its position, A patterning step of arranging a circuit pattern on the glass core and the bridge, A method for manufacturing a packaging substrate with a bridge embedded in it, comprising a removal step of removing the lower part of the glass core, wherein the packaging substrate with the bridge embedded in it according to claim 1 is manufactured.

13. The method for manufacturing a packaging substrate with an embedded bridge according to claim 12, wherein the fixing step is a step of forming an adhesive layer between one surface of the cavity and one surface of the bridge to fix them together.

14. The glass core is divided vertically into a first portion in which the cavity is located and a second portion in which the cavity is not located. The method for manufacturing a packaging substrate with an embedded bridge according to claim 12, wherein the removal step is a step of removing part or all of the second portion.

15. The glass core is a bonded glass formed by joining a first glass and a second glass. The first glass has a cavity and a core via, The method for manufacturing a packaging substrate with an embedded bridge according to claim 12, wherein the second glass does not have a through-cavity.

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