Parameter search device, parameter search method, and parameter search program

Abstract

The objective is to provide a system that can identify the parameters necessary for development calculations, even when dealing with photosensitive resin compositions that are scattering materials. [Solution] A parameter search device comprising: an acquisition unit that acquires at least one measured value of information relating to the minimum exposure amount or curing rate at which the film thickness does not decrease by development, and information relating to the maximum exposure amount or curing rate at which the film is substantially removed by development, when a resin layer is exposed with stepwise exposure amounts or cured to a predetermined degree by said exposure and then developed under predetermined development conditions; and a search unit that uses the measured value to search for parameters relating to coefficients or constants of a development speed calculation model by inverse analysis.

Description

[Technical Field]

[0001] The present invention relates to a parameter search device, a parameter search method, and a parameter search program. [Background technology]

[0002] Photosensitive resin compositions are materials used as insulating films that cover the surface of printed circuit boards and protect circuit patterns, or as materials used in circuit formation on boards. They play roles such as preventing solder from adhering to unnecessary areas during component mounting, and preventing circuits from adhering to unnecessary areas during circuit formation.

[0003] Such photosensitive resin compositions can be used to form fine patterns by, for example, exposing a substrate on which the photosensitive resin composition is formed across its entire surface through a negative or positive film with a circuit pattern, or by exposing it without a mask, and then developing the parts soluble in a developer solution. However, obtaining the desired pattern requires the expertise of a skilled person in designing the composition of the photosensitive resin composition and adjusting the exposure and development process conditions, and predicting the result has not been easy. Therefore, there is a need for a technique to predict the pattern shape of a photosensitive resin composition in advance. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2005-031010 [Patent Document 2] Japanese Patent Publication No. 2007-263564 [Overview of the project] [Problems that the invention aims to solve]

[0005] While various methods have been devised to obtain the development speed for photoresists as a prerequisite for predicting the pattern shape after development, these methods cannot be applied to photosensitive resin compositions containing scattering materials such as solder resists. Therefore, a new method for calculating the development speed is required to predict the pattern shape.

[0006] For example, Patent Document 1 discloses a method for observing changes in film thickness over time from changes in the intensity of reflected light exhibiting interference waveforms, with the aim of accurately measuring the dissolution rate of a photoresist with a fast dissolution rate from the start of development. However, in the case of compositions containing scatterers, the scatterers affect the propagation of light inside the resist, making it impossible to obtain the desired interference waveform and thus preventing the observation of changes in film thickness. Furthermore, there is the problem that factors affecting development, such as the spray pressure of the developing machine, cannot be taken into consideration.

[0007] Furthermore, Patent Document 2 discloses a method for observing weight changes from the vibration frequency change of an applied quartz plate, with the aim of observing the behavior of resist used in semiconductor manufacturing when it comes into contact with a liquid, particularly water. However, there are limitations to the weight change of the film thickness that can be measured by a quartz oscillator, and there is a problem that if the weight is large, the desired vibration change cannot be observed, and therefore the change in film thickness cannot be observed. In addition, it can be difficult to fabricate a sample of a suitable thickness for measurement with a quartz oscillator.

[0008] Furthermore, in addition to the above, a method can be considered to obtain changes in film thickness from the results obtained by examining several levels of development time. However, when the development time is long, such as around 30 minutes, experimental errors are small and problems are unlikely to occur, but when the development time is short, experimental errors are large and it is difficult to collect appropriate data. Moreover, it is necessary to set the levels finely, which results in high experimental costs.

[0009] As described above, various methods have been conventionally used to obtain the development rate of photoresist and to derive parameters related to the coefficients or constants of the development rate calculation model. However, none of these methods are suitable for obtaining the development rate of a photosensitive resin composition containing a scatterer (e.g., solder resist), and in a photosensitive resin composition containing a scatterer, it is difficult to specify the parameters necessary for development calculation.

[0010] The present invention has been made in view of the above problems, and an object thereof is to provide a system capable of specifying parameters necessary for development calculation even for a photosensitive resin composition that is a scatterer.

[0011] Further, if there is such a system, it becomes possible to provide an apparatus for executing a development process of a photosensitive resin composition containing a scatterer and to propose development process conditions suitable for the pattern shape to be formed by an exposure and development process. It is also conceivable to utilize the simulation results by such a system for the material design of the photosensitive resin composition.

Means for Solving the Problems

[0012] A parameter search device according to an aspect of the present invention exposes a resin layer with a stepwise exposure amount or sets a predetermined curing rate by the exposure, and when developing under predetermined development conditions, the minimum exposure amount or information on the curing rate at which the film thickness does not decrease, and an acquisition unit that acquires at least one measured value of information on the maximum exposure amount or curing rate at which the film is substantially removed, and a search unit that searches for parameters related to the coefficients or constants of the development rate calculation model by inverse analysis using the measured value.

Effects of the Invention

[0013] According to the present invention, an object is to provide a system capable of specifying parameters necessary for development rate calculation even for a photosensitive resin composition containing a scatterer.

Brief Description of the Drawings

[0014] [Figure 1A] This is a schematic diagram showing the configuration of the parameter search system of this embodiment. [Figure 1B] This is a schematic diagram of the hardware and functional configuration of the parameter search device of this embodiment. [Figure 2A] This diagram shows the relationship between film thickness and dissolution time before exposure. [Figure 2B] This is a conceptual diagram illustrating the relationship between exposure and film thickness using a step tablet. [Figure 3] An example of a flowchart for the search process in this embodiment is shown. [Figure 4A] This diagram shows the flow of calculating the development rate distribution from the absorbance distribution or hardening rate distribution using a development rate calculation model, and estimating the shape after development. [Figure 4B] This figure illustrates the correlation between development time and film thickness in an unexposed state. [Modes for carrying out the invention]

[0015] Hereinafter, embodiments of the present invention (hereinafter referred to as "this embodiment") will be described in detail with reference to the drawings, but the present invention is not limited thereto, and various modifications are possible without departing from its essence.

[0016] In the following description, we assume a negative-type photosensitive resin composition that hardens upon exposure and retains the hardened portion during development. However, the method of this embodiment may also be based on a positive-type photosensitive resin composition in which the exposed portion is removed during development.

[0017] 1. Parameter search device Figure 1A shows a schematic diagram illustrating the configuration of a parameter search system 1, which is one embodiment of the present invention. As shown in Figure 1A, in one example of the parameter search system 1, the server 100 (hereinafter also referred to as "parameter search device 100") which acts as a parameter search device and the user device 200 may be connected to each other via a network N such as the Internet.

[0018] The parameter search device 100 is an information processing device implemented by a parameter search program, and may transmit processing results to the user device 200 via the communication interface 120 and the network N in response to processing requests received from the user device 200. For example, the parameter search device 100 may acquire measured information from the user device 200 regarding the development of a resin layer made of a photosensitive resin composition containing a scattering material.

[0019] Here, the measured information regarding development includes at least one measured value relating to the minimum exposure amount or curing rate at which the film thickness does not decrease due to development, and relating to the maximum exposure amount or curing rate at which the film is substantially removed by development, when the resin layer is exposed with stepwise exposure amounts or cured to a predetermined degree by such exposure, and then developed under predetermined development conditions. The measured information regarding development may further include information relating to the development time or development speed when the resin layer is developed under predetermined development conditions in an unexposed state.

[0020] Furthermore, the parameter search device 100 may derive coefficients or constants for the development speed calculation model by inverse analysis based on measured information regarding development, and transmit them to the user device 200.

[0021] The object to be processed in this embodiment is not particularly limited, but may be, for example, a composition containing a scattering material or a composition without a scattering material. Among these, the method of this embodiment is useful for compositions containing a scattering material, as it is difficult to obtain information regarding the development speed as described above.

[0022] The user device 200 is an information processing device used by the user performing the parameter search process, and may be, for example, a computer, smartphone, tablet terminal, personal computer, etc.

[0023] Figure 1A shows a client / server system including a parameter search device 100 and a user device 200. The following description will focus on the server functioning as the parameter search device 100. However, the system in this embodiment is not limited to this configuration, and the user device 200 may instead be equipped with the processing functions of the parameter search device described later.

[0024] The hardware and functional configurations of the parameter search device 100 will be described below with reference to Figure 1B, and then each control will be explained in detail in relation to the functional configuration of the parameter search device 100.

[0025] As shown in Figure 1B, the parameter search device 100 includes, for example, a processor 110, a communication interface 120, an input / output interface 130, a memory 140, storage 150, and one or more communication buses 160 for interconnecting these components.

[0026] The processor 110 executes processes, functions, or methods implemented by code or instructions contained in a program stored in the storage 150. The processor 110 may include, but is not limited to, one or more central processing units (CPUs), MPUs, GPUs, etc., and may implement each of the processes, functions, or methods disclosed in each embodiment by logic circuits (hardware) or dedicated circuits formed on an integrated circuit, etc.

[0027] As shown in Figure 1B, the processor 110 of this embodiment may be configured to function as an acquisition unit 111, a search unit 112, a calculation unit 113, an estimation unit 114, and an output unit 115.

[0028] The communication interface 120 transmits and receives various types of data with other devices via the network N. This communication may be performed via wired or wireless connection, and any communication protocol may be used as long as communication between the devices is possible. For example, the communication interface 120 may be implemented as hardware such as a network adapter, various types of communication software, or a combination thereof.

[0029] Network N may include, but is not limited to, an ad-hoc network, an intranet, an extranet, a virtual private network (VPN), a local area network (LAN), a wireless LAN (WLAN), a wide area network (WAN), a wireless WAN (WWAN), a metropolitan area network (MAN), part of the internet, part of the public switched telephone network (PSTN), a mobile phone network, ISDNs (Integrated Service Digital Networks), wireless LANs, LTE (Long Term Evolution), CDMA (Code Division Multiple Access), Bluetooth, satellite communications, etc., and may be a combination of these. Network N may include one or more networks.

[0030] The input / output interface 130 includes an input device for inputting various operations to the parameter search device 100, and an output device for outputting processing results processed by the parameter search device 100. For example, the input / output interface 130 includes information input devices such as a keyboard, mouse, and touch panel, and information output devices such as a display. The parameter search device 100 may accept predetermined inputs or perform predetermined outputs by connecting an external input / output interface 130.

[0031] Memory 140 temporarily stores the program loaded from storage 150 and provides a workspace for the processor 110. Various data generated while the processor 110 is executing the program are also temporarily stored in memory 140. Memory 140 may be, for example, high-speed random access memory such as DRAM, SRAM, DDR RAM, or other random access solid-state memory, or a combination thereof.

[0032] The storage 150 stores programs, various functional units, and various data. The storage 150 may be, for example, one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid-state storage devices, or a combination thereof. Another example of the storage 150 is one or more storage devices installed remotely from the processor 110.

[0033] The communication bus 160 is not particularly limited as long as it is a known dedicated communication channel for exchanging data and control information between hardware configurations.

[0034] Next, we will describe in detail each of the functional components of the parameter search device of this embodiment.

[0035] The acquisition unit 111 acquires at least one measured value of information regarding the minimum exposure amount or curing rate at which the film thickness does not decrease due to development, and information regarding the maximum exposure amount or curing rate at which the film is substantially removed by development, when the resin layer is exposed with stepwise exposure amounts or cured to a predetermined degree by such exposure and then developed under predetermined development conditions. The acquisition unit 111 may further acquire information regarding the development time or development speed when the resin layer is developed under predetermined development conditions in an unexposed state.

[0036] Furthermore, the development conditions may include not only the developer composition, but also the temperature of the developer, the pressure of the spray used to apply the developer to the object, and other information that affects development. The developer composition and temperature affect the development speed, while spray pressure and other factors may affect the development speed in terms of the efficiency of developer exchange near the object, and may also affect the mechanical removal performance.

[0037] Figure 2A shows the relationship between film thickness and the unexposed dissolution time (breakpoint: BP) for two types of resin layers. As shown in Figure 2A, although the development time in the unexposed state correlates with film thickness, the intercept does not necessarily have to be zero when using a linear approximation.

[0038] Regarding information on the development time or development speed when developing a resin layer under predetermined development conditions in an unexposed state, an arbitrary initial film thickness (film thickness before development) and the dissolution time in the unexposed state (breakpoint: BP) may be used. The breakpoint is the time it takes for the resin layer to be completely removed when developing an unexposed resin layer under predetermined development conditions, and can be expressed by the following formula.

number

[0039] Furthermore, in the above formula, R min Assuming ≈ 0, the development speed R when unexposed is calculated using the following formula. max This may be used as information regarding the development speed when the resin layer is developed under predetermined development conditions while unexposed.

number

[0040] R max It is also possible to explore this simultaneously with other parameters using the gloss sensitivity, residual sensitivity, and development speed calculation models described later, but by measuring the breakpoint, R maxIt is possible to calculate this. In this case, the number of parameters to be searched in the search unit 112 described later can be reduced, so improvements in the calculation speed and accuracy of parameter search can be expected.

[0041] Figure 2B also shows a step tablet and a top view of the film thickness when exposed and developed using the step tablet. A step tablet is a test pattern used to form a pattern with different exposure levels (steps). For example, by placing a step tablet on a resin layer sample and exposing the entire surface with a predetermined exposure level, and then performing the development process, development results for each exposure level (step) can be obtained. Note that the larger the number of steps in the step tablet, the lower the light transmittance (lower the exposure level) in the test pattern with that number of steps.

[0042] Figure 2B shows the film thickness profile corresponding to the step tablet. In Figure 2B, the horizontal axis shows the number of steps, and the vertical axis shows the film thickness after development corresponding to each number of steps when development is performed under predetermined development conditions after full exposure via the step tablet. As shown in Figure 2B, it is possible to identify the minimum exposure amount (maximum number of steps) at which the film thickness does not decrease due to the development process (hereinafter also referred to as "gloss sensitivity") and the maximum exposure amount (minimum number of steps) at which the film is substantially removed by the development process (hereinafter also referred to as "residual sensitivity"). In Figure 2B, gloss sensitivity is shown as the first information and residual sensitivity as the second information.

[0043] Depending on the number of steps, if the film thickness does not decrease due to development, specifically, it means that if the film thickness before development is set to 100%, then 95% or more of the coating thickness remains after development. Furthermore, if the film is substantially removed by development, specifically, it means that if the coating thickness before development is set to 100%, then 5% or less of the coating thickness remains after development. The method for measuring the film thickness in this embodiment is not particularly limited, but for example, it may be measured as the difference between the measured value obtained as the total film thickness and the measured value obtained as the substrate thickness, in accordance with JIS K 5600-1-7:2014.

[0044] The search unit 112 uses at least one of the measured values ​​acquired by the acquisition unit 111 to search for parameters related to the coefficients or constants of the development speed calculation model (hereinafter also referred to as "development parameters") by inverse analysis. Prior to this, the search unit 112 may select a development speed calculation model.

[0045] The development speed calculation model is not particularly limited, but any model can be used, such as Mack's development speed formula, Dill's development speed formula, or Kim's development speed formula. Each of these models has different coefficients and constants, and the search unit 112 may derive the coefficients or constants of the selected development speed calculation model. The following explanation will use Mack's development speed formula as an example, but the development speed calculation model that can be used in the present invention is not limited to Mack's development speed formula. Furthermore, conventional development speed calculation models generally represent the relationship between the concentration of the dissolution inhibitor and the development speed in a positive-type photosensitive resin composition, and are therefore not suitable for photosensitive resin compositions that do not contain a dissolution inhibitor. For this reason, the development speed calculation model was applied to a photosensitive resin composition that does not contain a dissolution inhibitor by using the curing rate of the photosensitive resin instead of the dissolution inhibitor concentration in the conventional development speed formula.

[0046] The following is Mack's development rate formula using the curing rate of the photosensitive resin. In Mack's development rate formula, n mack ,P th ,R max ,R min This becomes the coefficient.

number

[0047] For the inverse analysis, any conventionally known method can be used without any particular limitations. In this embodiment, while comparing the measured values ​​with the calculated values ​​from the development speed calculation model, the optimal values ​​of the development parameters included in the development speed calculation model can be obtained by a search algorithm. In this process, coefficients or constants are adjusted so that the measured values ​​and calculated values ​​match by searching for and optimizing the development parameters.

[0048] FIG. 3 shows an example of the flowchart of the search process according to the present embodiment.

[0049] First, in step S11, the light absorption amount distribution at the exposure amount e m is calculated. At this time, for a predetermined point (0, 0, 0) of the target film, the light absorption amount distribution I(x, y, z) in the resin layer when irradiated with light of a predetermined wavelength may be calculated, and the light absorption amount distribution I'(z) obtained by integrating one-dimensionally in the thickness direction may be obtained. Further, the light absorption amount distribution E(z, em, n) in the n-th stage region may be calculated by the following formula from the light absorption amount distribution I'(z) and the transmittance T(n) of the n-th stage of the step tablet. The calculation of the light absorption amount distribution I(x, y, z) can be performed by a conventionally known method. can be performed.

Equation

[0050] Next, a curing rate distribution is calculated based on the obtained light absorption amount distribution. The method of calculating the curing rate distribution from the light absorption amount distribution is not particularly limited. For example, it may be converted based on the measured values of the relationship between the exposure amount and the curing rate, or it may be calculated based on the kinetics as follows.

[0051] From a kinetic perspective, the integral first-order rate equation is represented by the following formula.

Equation

[0052] Therefore, the curing rate P is represented by the following formula.

Equation

[0053] Also, when the curing rate P is P satAssuming that the change ceases and that the reciprocity law holds, which states that the light-induced phenomenon depends on the total amount of light irradiated (light intensity × irradiation time) regardless of the irradiation time or light intensity, the curing rate distribution P(E) can be expressed as follows, and the curing rate distribution can be calculated from the absorbance distribution using this formula.

number

[0054] In step S12, a model for calculating the development speed, such as the Dill formula, Kim formula, or Mack formula, is selected, and the calculation method is determined. For details on the variables, coefficients, and constants of these formulas, various literatures may be consulted. One example of such literature is the IEICE Transactions on Electronics, Information and Communication Engineers, Vol. J78-C-II No. 12, pp. 554-561, December 1995.

[0055] In step S13, candidate parameters such as coefficients or constants of the development rate calculation model are set as initial values ​​for the search algorithm. Substituting the hardening rate distribution P(E) into the Mack model described above, the unknown parameter is the dissolution selection parameter n. mack , hardening rate threshold P th , Maximum development speed R max ,Minimum development speed R min Development parameters such as, and saturation hardening rate P sat Examples of chemical reaction parameters include the reaction rate coefficient k. Here, using breakpoints, R max When calculated, the maximum development speed R max This can be treated as a known parameter.

[0056] In step S14, the exposure amount e m n step tablet in ST The remaining film thickness T at development time t in the second region. SR (e m ,n ST ,t) is the absorbance distribution E SR (z,em,n STThe time required to remove the coating can be calculated by determining the development speed obtained from a development speed calculation model using development parameters set as follows: m Gloss sensitivity n at development time t g • Residual sensitivity n r The maximum number of stages (max(n)) when the following conditions are met is (max(n) ST )) and minimum number of stages (min(n) ST Each can be calculated as follows: ))

number

[0057] Also, gloss sensitivity n g The exposure amount is e m ×T(n g ), residual sensitivity n r The exposure amount is e m ×T(n r It can be calculated using ).

[0058] In steps S15 to S19, based on the calculation results above, each candidate development parameter is scored, and a candidate development parameter that minimizes the error between the measured gloss sensitivity and residual sensitivity and the calculated gloss sensitivity and residual sensitivity is searched for, and the optimal development parameter is determined. There are no particular restrictions on the search for the optimal values ​​of these development parameters, and conventionally known search algorithms can be used. Figure 3 shows a method in which the development parameter that minimizes the error when a specified number of calculations are completed is determined as the optimal development parameter, but instead, a method may be used in which the development parameter that satisfies predetermined conditions, such as the error being less than or equal to a predetermined value, is determined as the optimal development parameter.

[0059] In the above example, we showed the use of information regarding gloss sensitivity and residual sensitivity, but other information may be used as measured information regarding development. For example, exposure may be performed with stepped exposure amounts by changing the output of the exposure device instead of using a step tablet. Furthermore, if there are characteristics that you would like to emphasize, you may arbitrarily weight them using coefficients.

[0060] Furthermore, the error can be calculated using the sum or average of the absolute errors between the calculated and measured values, as shown in the formula below, or the sum or average of the squared errors. In addition, the score may be calculated using results from multiple film thickness levels, multiple development time levels, and multiple exposure levels.

number

[0061] This makes it possible to search for optimal parameters such as coefficients or constants in the development speed calculation model, and by using such a development speed calculation model, it becomes possible to simulate the shape after development in the post-processing stage.

[0062] The calculation unit 113 may calculate the development speed distribution from the absorbance distribution or hardening rate distribution using a development speed calculation model that has searched for development parameters, and the estimation unit 114 may estimate the shape after development based on the development speed distribution calculated using the development speed calculation model. Figure 4A shows a flow in which the development speed distribution is calculated from the absorbance distribution or hardening rate distribution using a development speed calculation model, and the shape after development is estimated.

[0063] As shown in Figure 4A, conversion 1 converts the absorbance distribution E to the curing rate distribution P(E). The method for converting from the absorbance distribution E to the curing rate distribution P(E) is as described above.

[0064] As shown in Figure 4A, in conversion 2, the hardening rate distribution (P(E)) is converted to a development rate distribution (R(P)) using a development rate calculation model that explores development parameters. As the development rate calculation model, conventionally known formulas such as the Mack formula using the hardening rate can be used, as described above. This makes it possible to convert from the hardening rate distribution (P(E)) to the development rate distribution (R(P)).

[0065] Next, in conversion 3, the development speed distribution (R(P)) is converted to the post-development shape (T(R)). Conventional methods known can be used to convert the development speed distribution to the post-development shape. Figure 4A illustrates the fast marching method (FMM), which is one of the level setting methods and a technique for capturing interfaces, but is not limited to this.

[0066] As shown in Figure 4B, although the development time in the unexposed state correlates with the film thickness, the intercept is not always zero when using a linear approximation. In such cases, the intercept T0 is used to represent BP as follows.

number

number

[0067] From now on, if the intercept is not zero, a layer represented by the equation R0 = 1 / T0 may be added and the development calculation may be performed. Alternatively, the parameter T0 may be determined by a search algorithm. When the parameter T0 is determined by a search algorithm, the above equation R may be added to the development speed model. max You can substitute the values ​​and further explore BP and T0 as unknown parameters, or, as described above, you can use the measured value for BP and further explore only T0 as an unknown parameter.

[0068] The output unit 115 may output the hardening rate distribution calculated by the calculation unit 113, the development speed distribution calculated by the estimation unit 114 using a development speed calculation model, and the shape after development. The output unit 115 may further output the conditions for the development process to achieve the desired pattern shape based on the user's desired pattern shape. Examples of development process conditions include the composition of the developer solution, development temperature, development time, and spray pressure.

[0069] 2. Parameter Search Method The parameter search method of this embodiment includes an acquisition step in which a parameter search device acquires at least one measured value of information relating to the minimum exposure amount or curing rate at which the film thickness does not decrease by development, and information relating to the maximum exposure amount or curing rate at which the film is substantially removed by development, when the resin layer is exposed with stepwise exposure amounts or cured to a predetermined degree by said exposure and then developed under predetermined development conditions; and a search step in which parameters relating to coefficients or constants of a development speed calculation model are searched by inverse analysis using one or more of the measured values.

[0070] The specific details of the method in this embodiment are described in the control processing section above, so a detailed explanation is omitted here.

[0071] 3. Parameter search program In the parameter search program of this embodiment, the parameter search device is instructed to perform an acquisition step of acquiring at least one measured value of information relating to the minimum exposure amount or curing rate at which the film thickness does not decrease, and information relating to the maximum exposure amount or curing rate at which the film is substantially removed, when the resin layer is exposed with stepwise exposure amounts or cured to a predetermined degree by said exposure and then developed under predetermined development conditions; and a search step of using one or more of the measured values ​​to search for parameters relating to coefficients or constants of the development speed calculation model by inverse analysis.

[0072] The program may be recorded on a readable recording medium. The specific details of the processing performed by the program in this embodiment are described in the control processing section above, so a detailed explanation is omitted here. [Explanation of Symbols]

[0073] 1...Parameter search system, 100...Parameter search device, 110...Processor, 111...Acquisition unit, 112...Search unit, 113...Calculation unit, 114...Estimation unit, 115...Output unit, 120...Communication interface, 130...Input / output interface, 140...Memory, 150...Storage, 160...Communication bus, 200...User device.

Claims

1. An acquisition unit that acquires at least one measured value of information relating to the minimum exposure amount or curing rate at which the film thickness does not decrease due to development, and information relating to the maximum exposure amount or curing rate at which the film is substantially removed by development, when a resin layer is exposed with stepwise exposure amounts or cured to a predetermined degree by said exposure and then developed under predetermined development conditions, The system includes a search unit that uses the measured values ​​to search for parameters related to the coefficients or constants of the development speed calculation model through inverse analysis. Parameter search device.

2. The system further includes a calculation unit that calculates a development rate distribution from an absorbance distribution or a hardening rate distribution using the development rate calculation model that has explored the aforementioned parameters. The parameter search device according to claim 1.

3. The system further includes an estimation unit that estimates the shape after development based on the development speed distribution calculated using the development speed calculation model that explored the aforementioned parameters. The parameter search device according to claim 1.

4. The resin layer includes a scattering body. The parameter search device according to claim 1.

5. The parameter search device, An acquisition step in which, when a resin layer is exposed with stepwise exposure amounts or cured to a predetermined degree by said exposure and then developed under predetermined development conditions, at least one measured value is obtained of information regarding the minimum exposure amount or curing rate at which the film thickness does not decrease by development, and information regarding the maximum exposure amount or curing rate at which the film is substantially removed by development. Using the measured values, a search step is performed to search for parameters related to the coefficients or constants of the development speed calculation model by inverse analysis. Parameter search method.

6. In the parameter search device, An acquisition step in which, when a resin layer is exposed with stepwise exposure amounts or cured to a predetermined degree by said exposure and then developed under predetermined development conditions, at least one measured value is obtained of information regarding the minimum exposure amount or curing rate at which the film thickness does not decrease by development, and information regarding the maximum exposure amount or curing rate at which the film is substantially removed by development. Using the measured values, the search step is performed to search for parameters related to the coefficients or constants of the development speed calculation model by inverse analysis. Parameter search program.

Images