Semiconductor processing system configured to carry out plasma-enhanced chemical vapor deposition processes and related methods

Abstract

We provide semiconductor processing systems. [Solution] A semiconductor processing system is disclosed for depositing an epitaxial layer on a substrate by plasma-enhanced chemical vapor deposition. The semiconductor processing system includes a chamber body, a substrate support disposed inside the chamber, and a plasma generating means configured to generate reactive species inside the chamber. A method for depositing an epitaxial layer on a substrate by a plasma-enhanced chemical vapor deposition process is also disclosed.

Description

Technical Field

[0001] This disclosure generally relates to the field of semiconductor processing systems, related methods, as well as devices and the field of integrated circuit manufacturing. More specifically, this disclosure generally relates to semiconductor processing systems configured to perform plasma enhanced chemical vapor deposition processes, and related methods for depositing one or more epitaxial layers.

Background Art

[0002] In plasma enhanced chemical vapor deposition (PECVD), an epitaxial layer is deposited on a substrate such as a silicon wafer. After the generation of excited reactive species by a plasma generation device / system, the chemical reaction may occur within the reaction chamber, and one or more reactants may react and / or decompose on the substrate surface to produce an epitaxial layer.

[0003] To facilitate the occurrence of chemical reactions, conventional systems may attempt to increase the temperature at which deposition occurs. However, such an approach requires significant energy consumption and / or exceeds the thermal load of certain materials on the substrate, thereby causing undesirable effects such as instability and chamber coating. As a result, conventional systems lack a mechanism to balance the growth rate and thermal load, thereby limiting the ability to control precursor deposition and provide optimal performance, throughput, and energy consumption in semiconductor manufacturing processes.

[0004] Any discussion, including the discussion of problems and solutions described in this section, is included in this disclosure only for the purpose of providing background to the disclosure, and none of the discussions, or all of them, should be regarded as an admission that they were known at the time the invention was made or that they otherwise constitute prior art.

Summary of the Invention

[0005] This summary introduces the selected concepts in a simplified form, which are described in more detail below. This summary is not necessarily intended to identify the main or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. [Means for solving the problem]

[0006] Various embodiments provided are semiconductor processing systems configured to carry out a plasma-enhanced epitaxial deposition process, the semiconductor processing system comprising: a chamber body having an upper wall, a lower wall, a first side wall, and a second side wall opposite the first side wall, wherein the upper wall extends longitudinally between an injection end and a discharge end opposite the longitudinal side, and the lower wall is below and parallel to the upper wall; a substrate support configured to support a substrate and disposed inside the chamber between the injection end and the discharge end; an injection flange coupled to the injection end and having a plurality of injection ports configured to introduce a gas-phase process gas into the chamber; and a plasma generation means disposed between the injection flange and the substrate support, configured to generate reactive species from the gas-phase process gas inside the chamber.

[0007] In some embodiments, the plasma generation means comprises one or more internal elements located inside the chamber.

[0008] In some embodiments, the plasma generating means includes an internal filament positioned longitudinally between the injection flange and the substrate support.

[0009] In some embodiments, the internal filaments are positioned near multiple injection ports so as to intersect with the flow path of the gas-phase process gas into the chamber.

[0010] In some embodiments, the internal filament extends perpendicularly between a first sidewall and a second sidewall opposite the first sidewall.

[0011] In some embodiments, the internal filaments are electrically coupled to an external plasma power / control system by first and second contacts, each extending from inside the chamber to outside the chamber through a first side wall.

[0012] In some embodiments, the internal filament is supported by a cantilever configuration at the first side wall.

[0013] In some embodiments, the internal filament is electrically coupled to the plasma power / control system by a first contact extending through a first sidewall and by a second contact extending through a second sidewall opposite the first sidewall.

[0014] In some embodiments, the internal filament is one of a plurality of internal filaments, each of which is positioned proximal to one of the plurality of injection ports such that it intersects with an individual flow path of gas-phase process gas introduced by one of the plurality of injection ports.

[0015] In some embodiments, each of the multiple internal filaments is electrically coupled to the plasma power / control system by a first contact and a second contact.

[0016] In some embodiments, the plasma generation means comprises one or more external elements positioned around the outside of the chamber.

[0017] In some embodiments, the plasma generation means includes a pair of external electrodes positioned around the outside of the chamber.

[0018] In some embodiments, the pair of external electrodes comprises an upper electrode positioned above the upper wall of the chamber body and a lower electrode positioned below the lower wall of the chamber body.

[0019] In some embodiments, the pair of external electrodes comprises a first lateral electrode positioned proximal to the outer surface of a first sidewall and a second lateral electrode positioned proximal to the outer surface of a second sidewall opposite to the first sidewall.

[0020] In some embodiments, the plasma generating means comprises one or more external coils extending around the outside of the chamber between the injection flange and the substrate support.

[0021] In some embodiments, the plasma generating means includes a first external coil extending laterally around the outside of the chamber and longitudinally proximal to the injection flange, and a second external coil extending laterally around the outside of the chamber and longitudinally proximal to the substrate support.

[0022] In some embodiments, the injection flange further comprises multiple flow controllers configured to control the flow of gas-phase process gas from the gas supply source assembly to multiple injection ports and through them into the chamber.

[0023] In some embodiments, the gas supply source assembly comprises a silicon precursor supply source in fluid communication with an injection flange, and the reactant species comprises one or more of silicon radicals, metastable silicon, and silicon ions.

[0024] In some embodiments, the chamber body has a plurality of external ribs that extend laterally around the outside of the chamber and are spaced longitudinally apart from each other between the injection end and the discharge end opposite in the longitudinal direction of the chamber body.

[0025] In some embodiments, the semiconductor processing system further comprises an array of heater elements supported around the outside of the chamber and optically coupled to the substrate support, the array of heater elements comprising a plurality of lower linear lamps supported below the chamber body and optically coupled to the substrate support by a quartz material forming the chamber body, and a plurality of upper linear lamps supported above the chamber body and optically coupled to the substrate support by a quartz material forming the chamber body.

[0026] In some embodiments, the semiconductor processing system further comprises a controller including a processor and a memory having instructions recorded thereon, the instructions causing the processor, when read by the processor, to seat a substrate on the substrate support, provide a controlled flow of a vapor-phase process gas to an injection flange and through the same into the interior of the chamber, and activate plasma generating means to generate reactive species from the vapor-phase process gas in a plasma generation zone to deposit one or more epitaxial layers on the substrate.

[0027] For purposes of summarizing the advantages achieved over the prior art, certain objects and advantages of the present invention are described herein. It will of course be understood that not necessarily all such objects or advantages will be achieved in accordance with any particular embodiment of the present invention. Thus, for example, one skilled in the art will recognize that the present invention may be embodied or carried out in a manner that achieves or optimizes one advantage or a group of advantages as taught or suggested herein without necessarily achieving any other object or advantage as taught or suggested herein.

[0028] All of the above embodiments are intended to be within the scope of the invention disclosed herein. The above and other embodiments will be readily apparent to one skilled in the art from the following detailed description of certain specific embodiments, with reference to the accompanying drawings, but the invention is not limited to any particular embodiment disclosed.

[0029] To easily identify the consideration of any particular element or action, the most significant digit of the reference number refers to the figure number in which that element is first introduced.

[0030] A more complete understanding of the embodiments of the present disclosure can be obtained by referring to the detailed description and the claims in connection with the following exemplary drawings.

Brief Description of the Drawings

[0031] [Figure 1] A cross-sectional view of a semiconductor processing system including a chamber arrangement according to one or more embodiments. [Figure 2] A schematic plan view of a chamber arrangement including plasma generation means according to one or more embodiments. [Figure 3] A cross-sectional view of a chamber arrangement including plasma generation means according to one or more embodiments. [Figure 4] A schematic plan view of a chamber arrangement including an internal filament according to one or more embodiments. [Figure 5] A cross-sectional view of a chamber arrangement including an internal filament according to one or more embodiments. [Figure 6] A cross-sectional view of a chamber arrangement including an internal filament and a filament support according to one or more embodiments. [Figure 7] A further cross-sectional view of a chamber arrangement including an internal filament according to one or more embodiments. [Figure 8] A cross-sectional view of a chamber arrangement including a plurality of internal filaments according to one or more embodiments. [Figure 9] A schematic plan view of a chamber arrangement including a plurality of internal filaments according to one or more embodiments. [Figure 10] A cross-sectional view of a chamber arrangement including a pair of external electrodes according to one or more embodiments. [Figure 11] A schematic plan view of a chamber arrangement including a pair of external electrodes according to one or more embodiments. [Figure 12]A cross-sectional view of a chamber arrangement is shown, including a first external coil and a second external coil according to one or more embodiments. [Figure 13] This document describes a method for depositing an epitaxial layer on a substrate using reaction species generated inside a chamber according to one or more embodiments. [Modes for carrying out the invention]

[0032] It will be understood that the elements in the drawings are illustrated for simplification and clarity and are not necessarily drawn to actual size. For example, the dimensions of some elements in the drawings may be exaggerated relative to others in order to help improve understanding of the illustrated embodiments of this disclosure.

[0033] The descriptions of exemplary embodiments of the methods and configurations provided below are illustrative and for illustrative purposes only. The following descriptions are not intended to limit the scope of this disclosure or the claims. Furthermore, the enumeration of multiple embodiments having the features or steps described is not intended to exclude other embodiments having additional features or steps, or incorporating different combinations of the features or steps mentioned.

[0034] The various embodiments provided relate to semiconductor processing systems, such as plasma-enhanced chemical vapor deposition (PECVD) systems configured for the deposition of epitaxial layers on substrates, and to methods for depositing epitaxial layers using semiconductor processing systems. Semiconductor processing systems can be used to process substrates such as semiconductor wafers. For example, the systems described herein can be used to form or grow epitaxial layers (e.g., semiconductor layers) on the surface of a substrate.

[0035] Chemical vapor deposition (CVD) systems configured for the epitaxial deposition of semiconductor materials (e.g., epitaxial silicon layers) typically deposit such layers by loading a substrate into a reaction chamber, heating the substrate to a desired deposition temperature, and exposing the substrate to a silicon precursor under environmental conditions selected to deposit an epitaxial silicon layer on the substrate. The heating of the substrate is such that the silicon precursor decomposes into epitaxial layer components at a rate typically corresponding to the substrate temperature (i.e., the deposition temperature). While generally acceptable for its intended purpose, heating the substrate to high deposition temperatures (e.g., above 600°C, or above 1000°C for some precursors) consumes large amounts of power and consumables and can damage the substrate and / or components of the semiconductor processing system used for deposition.

[0036] In silicon epitaxy, the introduction of silicon reactive species generated by a remote plasma source located outside the reaction chamber can be used to lower the deposition temperature. However, remotely generated reactive species tend to recombine before contact with the substrate, thereby limiting the effectiveness of common remote plasma generation techniques for epitaxial deposition processes.

[0037] Various embodiments provide semiconductor processing systems configured for epitaxial deposition of semiconductor layers at reduced deposition temperatures. In various embodiments, plasma generation means configured to generate reactive species (e.g., ions, radicals, metastable species, etc.) inside the PECVD reaction chamber are used. Generating reactive species inside the reaction chamber, particularly near the substrate where deposition is occurring, can reduce the recombination of radical species and thereby increase the efficiency of the deposition system.

[0038] As used herein, the term “substrate” may refer to any substrate material, or any substrate material on which a device, circuit, or film can be formed, or on which a device, circuit, or film can be formed, by a method according to one embodiment of the present disclosure. The substrate may include a bulk material such as silicon (e.g., single-crystal silicon), another Group IV material such as germanium, or another semiconductor material such as a Group II-VI semiconductor material or a Group III-V semiconductor material, and may include one or more layers on or beneath the bulk material. Furthermore, the substrate may have various features such as depressions, protrusions, and the like formed in or on at least a portion of the layers of the substrate. For example, the substrate may include a bulk semiconductor material and an insulating layer or dielectric material layer on at least a portion of the bulk semiconductor material. Furthermore, the term “substrate” may refer to any substrate material that can be used, or on which a device, circuit, or film can be formed. The “substrate” may be continuous or discontinuous, rigid or flexible, solid or porous. The “substrate” can be in any form, such as powder, plate, or workpiece. A substrate in plate form may include wafers of various shapes and sizes. Substrates can be made from materials such as silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide. Continuous substrates may extend beyond the boundaries of the process chamber where the deposition process takes place and may be moved through the process chamber so that the process continues until the end of the substrate is reached. Continuous substrates may be supplied from a continuous substrate supply system that enables the manufacture and output of continuous substrates in any suitable form. Non-limiting examples of continuous substrates include sheets, nonwoven films, rolls, foils, webs, flexible materials, continuous filaments, or bundles of fibers (i.e., ceramic fibers or polymer fibers). Continuous substrates may also include carriers or sheets on which discontinuous substrates are mounted. As an example, a substrate may include a semiconductor material. The semiconductor material may include one or more of the source, drain, or channel regions of a device, or may be used to form them.The substrate may further include an interlayer dielectric (e.g., silicon dioxide) and / or a high-dielectric-constant material layer superimposed on the semiconductor material. In this description, the high-dielectric-constant material (or high-k dielectric material) is a material having a dielectric constant greater than that of silicon dioxide.

[0039] The term precursor gas(s) can refer to a gas or combination of gases involved in a chemical reaction that produces another compound. For example, a precursor gas may be used to grow an epitaxial layer containing silicon germanium. A precursor gas may include a deposition gas(s), a dopant gas(s), or a combination of a deposition gas(s) and a dopant gas(s). A precursor gas may include silicon precursors, such as higher silicon precursors. A silicon precursor may further include silane (SiH4) or chlorosilane (SiCl4). In some embodiments, a higher silicon precursor may have one silicon atom per molecule, such as silane. A higher silicon precursor may have two or more silicon atoms per molecule, such as disilane. In some embodiments, a higher silicon precursor may have three or more silicon atoms. A higher silicon precursor may include non-halogenated higher silicon precursors, such as trisilane and tetrasilane. The higher-order silicon precursor may include halogenated higher-order silicon precursors, such as higher-order chlorine-containing precursors, such as chlorodisilane, dichlorosilane, trichlorosilane, and tetrachlorosilane. The precursor gas may include higher-order germanium-containing material layer precursors, such as germane, digermane, trigermane, their chloride derivatives, and mixtures thereof. The precursor gas may include P-dopant higher-order precursors, such as diborane (B2H6). The precursor gas may also include N-dopant higher-order precursors, such as phosphine (PH3) and arsine (AsH3).

[0040] As used herein, the term “epitaxial layer” may refer to an underlying single-crystal (or substantially single-crystal) substrate, or a single-crystal layer (or substantially single-crystal layer) directly above the layer.

[0041] As used herein, the terms “chemical vapor deposition” or “CVD” may refer to any process by which a substrate is exposed to one or more volatile precursors (and optionally additional process gases) to cause a reaction and / or decomposition on the substrate surface to produce a desired deposition.

[0042] The following descriptions of various embodiments refer to the accompanying drawings, which form part of this specification, illustrating various embodiments in which the aspects of the disclosure may be carried out. It should be understood that other embodiments may be used and structural and functional modifications may be made without departing from the scope of this disclosure. The aspects of this disclosure may be possible in other embodiments and may be carried out or performed in various ways. It should also be understood that the expressions and terms used herein are for illustrative purposes only and should not be considered limiting. Rather, the words and terms used herein are given the broadest interpretation and meaning. The use of “includes” and “equips,” and variations thereof, means to include the items and their equivalents listed thereafter, and any additional items and equivalents thereof. The figures in this disclosure show arrows indicating various directions, but the arrows indicating directions are not intended to limit the process to the extent that bidirectional communication is excluded. Rather, the arrows indicating directions indicate a general flow of steps, rather than a unidirectional movement of information. Throughout this specification, where an element is referred to as “comprising” or “containing” another element, unless otherwise specifically contradictory, it should not be understood that the element excludes other elements, and an element may contain at least one other element. Throughout this specification, expressions such as “at least one of a, b, and c” may include “a only,” “b only,” “c only,” “a and b,” “a and c,” “b and c,” and / or “all of a, b, and c.”

[0043] According to an embodiment of the present disclosure, Figure 1 shows a cross-sectional view of a semiconductor processing system 100 including a chamber arrangement 102. Figure 2 shows a schematic plan view of the chamber arrangement 102, and Figure 3 shows a cross-sectional view of a portion of the chamber arrangement 102 passing through the AA plane of Figure 1.

[0044] In various embodiments, the semiconductor processing system 100 includes a chamber configuration 102. The chamber configuration 102 is supplied with a gas-phase process gas from a gas source assembly 104, along with an optional gas distribution assembly 106. The semiconductor processing system 100 also includes an exhaust assembly 108, a controller 110, and a plasma power / control system 112. Although the controller 110 and plasma power / control system 112 are shown as separate entities in Figure 1, both systems can be combined into a single control system configured to provide the operation and functionality of both the controller 110 and the plasma power / control system 112. Furthermore, the semiconductor processing system 100 includes plasma generating means (internal elements 114, external elements 116) configured to generate reactive species inside the chamber (e.g., from the plasma), as described in detail below.

[0045] The gas source assembly 104 is constructed and positioned to supply a gas-phase process gas to the chamber configuration 102. The gas-phase process gas may include a single gas or a mixture of gases, but not limited to, a precursor gas, a dopant gas, an etchant gas, and an inert gas (e.g., a purge gas, a carrier gas). The gas source assembly 104 may include various systems, subsystems, and components (not shown) for generating and controlling the flow of the gas-phase process gas. These components guide the gas-phase process gas from a source contained within the gas source assembly 104 to a process gas supply line 118 that fluidly connects the gas source assembly 104 to the chamber configuration 102, via a gas distribution assembly 106. The gas source assembly 104 may include a precursor source 120 containing several precursor sources. In some embodiments, the precursor source 120 includes a silicon source containing one or more silicon precursors. The gas phase process gas supplied by the gas supply source assembly 104 is introduced into the chamber interior 122 (for example, as indicated by the process gas flow 124) through an injection flange 126 which includes a plurality of injection ports 128, as described in detail below.

[0046] In various embodiments, the precursor source 120 subsystem of the gas source assembly 104 includes a silicon source (not shown). The silicon source may comprise a subsystem that provides a flow of silicon precursor to a plurality of injection ports 128 and the interior of the chamber 122 through the injection flange 126 into the chamber arrangement 102 and through therein, as shown by the process gas flow 124 in Figure 1.

[0047] In some embodiments, the silicon source includes a silicon precursor having one silicon atom per molecule, such as silane (SiH4) or monochlorosilane (ClH3Si). Alternatively (or additionally), the silicon precursor may include higher-order silicon precursors, such as silicon precursors having two or more silicon atoms per molecule, or three or more silicon atoms per molecule, in certain embodiments. Higher-order silicon precursors may include non-halogenated higher-order silicon precursors, such as trisilane and tetrasilane. Higher-order silicon precursors may include halogenated higher-order silicon precursors, such as higher-order chlorine-containing precursors, such as chlorodisilane, dichlorosilane, trichlorosilane, and tetrachlorosilane.

[0048] In some embodiments, the silicon source includes silane and / or halosilane. In some embodiments, the silicon precursor may include a silicon hydride precursor. In such embodiments, the silicon hydride precursor may be silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H 10 ) may be selected from the group consisting of ). In further embodiments, the silicon precursor may include silicon halide precursors. In such embodiments, the silicon halide precursor may include silicon chloride precursors selected from the group consisting of monochlorosilane (MCS), dichlorosilane (DCS), trichlorosilane (TCS), hexachlorodisilane (HCDS), octachlorotrisilane (OCTS), and silicon tetrachloride (STC). In further embodiments, the silicon precursor may include silicon iodide precursors. In such embodiments, the silicon halide precursor may include silicon iodide precursors selected from the group consisting of monoiodosilane, diiodosilane, triiodosilane, and tetraiodosilane.

[0049] The precursor source 120 subsystem of the gas source assembly 104 may include a germanium source (not shown). The germanium source may provide a flow of germanium precursor to the chamber arrangement 102 through an injection flange 126 which includes a plurality of injection ports 128.

[0050] The germanium source may include germanium precursors such as germanium and / or germanium halides. For example, germanium precursors may include germanium such as germanium (GeH4), digermane (Ge2H6), trigermane (Ge3H8), or germylsilane (GeH6Si). In further embodiments, germanium precursors may include germanium halides such as GeCl4, GeCl2, and GeCl2H2.

[0051] The gas supply source assembly 104 may include a dopant supply source 130, an etchant supply source 132, and a carrier supply source 134, in addition to the precursor supply source 120. The dopant supply source 130 may contain dopant compounds such as phosphorus (P), boron (B), and / or arsenic (As). In some embodiments, the dopant supply source may contain p-dopants such as borane, diborane (B2H6), deuterium-diborane (B2D6), and boron halides such as BBr3, BH2Cl, and BCl2H. In other embodiments, the dopant supply source 130 may contain n-dopants such as phosphine (PH3) and arsine (AsH3). The etchant supply source 132 may contain a halide-containing compound. The halide-containing compound may flow independently of the precursor, for example, to provide purging and / or to remove condensates from within the chamber configuration 102. The halide-containing compound may flow with one or more other process gases. Suitable examples of halides include chlorine (Cl), e.g., chlorine (Cl2) gas, and hydrochloric acid (HCl), as well as fluorine (F), e.g., fluorine (F2) gas, and hydrofluoric acid (HF). The carrier supply source 134 may be configured to supply an inert carrier gas and / or purge gas to the chamber configuration 102. Suitable examples of purge / carrier gases include inert gases such as hydrogen (H2) gas, nitrogen (N2) gas, argon (Ar) gas, or helium (He) gas, and mixtures thereof.

[0052] According to embodiments of this disclosure, the semiconductor processing system 100 includes a chamber configuration 102. The chamber configuration 102 may include a cross-flow low-temperature wall epitaxial reaction chamber. The chamber configuration 102 may include a chamber body 136 and a substrate support 138. As shown in Figure 1, the chamber configuration 102 may include an upper heater element array 140 and a lower heater element array 142. While specific configurations are shown and described herein, it is understandable and recognized that the chamber configuration 102 may include other elements, and / or elements shown and described herein may be excluded and still remain within the scope of this disclosure.

[0053] According to embodiments of this disclosure, and with reference to Figures 1, 2, and 3, the chamber arrangement 102 includes a chamber body 136. The chamber body 136 includes an upper wall 148, a lower wall 150, a first side wall 202 (see Figure 2), and a second side wall 204 opposite the first side wall 202. The upper wall 148 and the lower wall 150 extend longitudinally between the injection end 152 and the longitudinally opposite discharge end 154, at least partially defining the chamber interior 122 and the chamber exterior 160. As used herein, the longitudinal orientation of the chamber body 136 (and the relative orientation and position of the elements of the chamber arrangement 102) may be indicated by the longitudinal axis 156. Furthermore, the lower wall 150 is below the upper wall 148 and parallel to the upper wall 148. In certain embodiments, the chamber body 136 may be formed from a ceramic material such as sapphire or quartz. The chamber body 136 may include a plurality of external ribs 158. The plurality of external ribs 158 may extend laterally around the outside 160 of the chamber and be spaced longitudinally apart between the injection end 152 and the discharge end 154 of the chamber body 136. In addition, according to certain examples, the chamber body 136 may not include ribs.

[0054] According to embodiments of the present disclosure, a chamber arrangement 102 (see Figure 1) includes an injection flange 126 coupled to an injection end 152 of a chamber body 136. The injection flange 126 includes a front surface 162 coupled to the injection end 152 of the chamber body 136. The injection flange 126 includes a substrate channel 164 through which a substrate (e.g., substrate 146) can be loaded into and removed from the chamber interior 122. The injection flange 126 includes a plurality of injection ports 128 (as shown by the exemplary injection port 128 in Figure 1, and by the series of injection ports 128 in Figures 2 and 3). In some embodiments, the plurality of injection ports 128 are located on the front surface 162 of the injection flange 126. In other embodiments, the plurality of injection ports 128 are located proximal to the front surface 162 of the injection flange 126, for example, the plurality of injection ports 128 may be located on the upper surface of the substrate channel 164.

[0055] In various embodiments, the injection flange 126 comprises a gas distribution assembly 106 which may include a plurality of flow controllers 304 configured to control the flow of gas-phase process gas from the gas source assembly 104 to a plurality of injection ports 128 and through them (as shown in Figure 3) into the chamber interior 122.

[0056] According to embodiments of the present disclosure, a gas distribution assembly 106 (as illustrated in Figure 3) comprises one or more (e.g., multiple) gas lines 306 that can be coupled to a gas source assembly 104 (Figure 1). In various embodiments, each of the multiple gas lines 306 can be coupled to a corresponding flow controller 304. The flow controller 304 enables independent control of the flow (e.g., flow rate) of each gas to and from the injection port 128 of the injection flange 126 and through it to the chamber interior 122. The flow controller 304 may include any suitable automatic or manual valves that can control the flow rate of gas to each gas channel located within the injection flange 126. The injection flange 126 is shown in Figure 3 as including nine gas lines 306, nine corresponding flow controllers 304, and nine injection ports, but the injection flange 126 may include any suitable number of injection ports (as well as associated gas lines and flow controllers). In some embodiments, the injection flange 126 may be supplied from 1 to 10 gas lines (via a corresponding flow controller) and have 1 to 10 injection ports. In some embodiments, the injection flange 126 may have fewer than 10 injection ports, as well as corresponding gas lines and flow controllers; fewer than 8 injection ports, as well as corresponding gas lines and flow controllers; fewer than 5 injection ports, as well as corresponding gas lines and flow controllers; or fewer than 3 injection ports, as well as corresponding pre-gas lines and flow controllers.

[0057] As shown in Figures 1 and 2, the substrate support 138 is located inside the chamber interior 122. The substrate support 138 may be positioned between the injection end 152 and the discharge end 154 of the chamber body 136. The substrate support 138 includes a shaft member 166 located inside the chamber body 136 and configured to rotate around a pivot axis inside the chamber interior 122. The substrate support 138 may be formed from an opaque material such as silicon carbide or bulk graphite material.

[0058] The upper heater element array 140 may be configured to heat the substrate 146 and / or the epitaxial layer 144 during deposition on the substrate 146 by radiating heat into the chamber interior 122. The upper heater element array 140 may include a plurality of upper linear lamps supported above the chamber body 136 (e.g., above the upper wall 148) and optically coupled to the substrate support 138 by the material forming the chamber body, such as quartz. The lower heater element array 142 may be similar to the upper heater element array 140 and may also be configured to heat the substrate 146 and / or the epitaxial layer 144 during deposition on the substrate 146. The lower heater element array 142 may include a plurality of lower linear lamps supported below the chamber body 136 (e.g., below the lower wall 150) and optically coupled to the substrate support 138 by the material forming the chamber body 136. In various embodiments, the upper heater element array 140 and / or the lower heater element array 142 may be used in conjunction with various plasma generating means (internal elements 114, external elements 116) for epitaxially depositing the epitaxial layer 144 on the substrate 146.

[0059] The semiconductor processing system 100 may also include an exhaust assembly 108. The exhaust assembly 108 may be configured to exhaust the chamber arrangement 102 and may include one or more vacuum pumps 168 and / or an exhaust gas treatment system 170. The vacuum pumps 168 may be connected to the chamber arrangement 102 and may be configured to control the pressure inside the chamber 122. The exhaust gas treatment system 170 may be connected to one or more vacuum pumps 168 and may be configured to treat the flow of residual precursors and / or reaction products that have flowed out of the chamber arrangement 102. In some embodiments, the exhaust assembly 108 may be configured to maintain environmental conditions inside the chamber 122 that are suitable for the deposition operation. In one embodiment, the exhaust assembly 108 is configured to maintain environmental conditions inside the chamber 122 that are suitable for extending the lifetime of the reaction species generated by the plasma generating means (e.g., internal elements 114, external elements 116).

[0060] The semiconductor processing system 100 further comprises a processor and a controller 110 including a memory having instructions stored in the memory, as described in detail below, the instructions causing the processor to carry out a process for depositing an epitaxial layer 144 on a substrate 146 when read by the processor.

[0061] The semiconductor processing system 100 may include a plasma power / control system 112. In some embodiments, the plasma power / control system 112 may be used in addition to the controller 110. In some embodiments, a single controller (e.g., 110 or 112) may be used to operate the various systems / subsystems of the semiconductor processing system 100 (see Figure 1), and to power and control the generation of reactive species inside the chamber using plasma generation means (internal elements 114, and / or external elements 116).

[0062] According to embodiments of this disclosure, the plasma power / control system 112 may include various systems and subsystems for generating and controlling the plasma, for example, a power supply and a matching network. The power supply may be selected from DC power supplies, AC power supplies, RF power supplies, microwave generators, etc. The plasma power / control system 112 may include a matching network. For example, the matching network may be used to adjust the impedance between the power supply and the plasma load to ensure efficient power transfer inside the chamber 122 and stable plasma conditions. Furthermore, the plasma power / control system 112 may include various sensors and monitoring systems for evaluating the plasma state and / or the generation of reactive species inside the chamber 122.

[0063] According to embodiments of the present disclosure, the semiconductor processing system 100, in particular the chamber configuration 102, includes plasma generating means configured to generate reactive species from a gas-phase process gas supplied from a gas distribution assembly 106 via an optional gas distribution assembly 106 (as shown in Figures 1 to 3). In such embodiments, reactive species may be generated inside the chamber 122 by a plasma generating zone located between an injection flange 126 and a substrate support 138.

[0064] In various embodiments, the plasma generation means includes one or more internal elements located inside the chamber 122. For example, Figures 1 to 3 show an internal element 114 located inside the chamber 122, configured to generate reactive species (e.g., from the plasma), as described in detail below.

[0065] In various embodiments, the plasma generation means includes one or more external elements positioned around the outside of the chamber 160. For example, Figures 1 to 3 show an external element 116 configured to generate reactive species (e.g., from the plasma) inside the chamber 122, as described in detail below.

[0066] According to embodiments of the present disclosure, the plasma generating means may comprise one or more internal filaments located inside the chamber. In such embodiments, the internal filament(s) may be positioned between the injection flange and the substrate support.

[0067] Figure 4 shows a schematic plan view of the chamber configuration 402, which includes internal filaments 404 configured to generate reactive species inside the chamber 122.

[0068] In some embodiments, the internal filament 404 is positioned between the injection flange 126 and the substrate support 138. In one embodiment, the internal filament 404 is positioned longitudinally (i.e., along the longitudinal axis 156 in Figure 1) between the front surface 162 of the injection flange 126 and the outer periphery 406 of the substrate support 138. In another embodiment, the internal filament 404 is positioned longitudinally between the front surface 162 of the injection flange 126 and the outer periphery 408 of the substrate 146.

[0069] According to embodiments of this disclosure, the internal filament 404 may be longitudinally proximal to the plurality of injection ports 128. In some embodiments, the internal filament 404 is positioned adjacent to the plurality of injection ports 128. For example, the internal filament 404 may be positioned proximal to the plurality of injection ports such that it intersects with the flow path of the gas-phase process gas into the chamber interior 122 (as shown by the process gas flow 124 in Figure 4).

[0070] According to embodiments of the present disclosure, the internal filament 404 may extend perpendicularly (with respect to the longitudinal axis 156) between a first side wall 202 and a second side wall 204 opposite the first side wall 202. In such embodiments, the internal filament 404 may be oriented parallel to the front surface 162 of the injection flange 126, as shown in Figure 4. In some embodiments, the internal filament 404 extends perpendicularly into the chamber interior 122 between a first injection port 410 (of a plurality of injection ports 128) and the last injection port 412 (of a plurality of injection ports 128). In such embodiments, the internal filament 404 extends perpendicularly over the entire range of the process gas flow 124 introduced into the chamber interior 122 through the plurality of injection ports 128. In such embodiments, the internal filament 404 extends perpendicularly over the entire diameter of the substrate 146 placed on the substrate support 138.

[0071] According to embodiments of the present disclosure, the internal filament 404 is electrically coupled to an external plasma power / control system (e.g., 112 in Figure 1). In such embodiments, the internal filament 404 includes a first filament contact 414 and a second filament contact 416. In some embodiments, both the first filament contact 414 and the second filament contact 416 may extend through and through a first sidewall 202 (from the inside of the chamber 122 to the outside of the chamber 160) to the plasma power / control system 112 (Figure 1). In such embodiments, the first sidewall 202 may include a feedthrough opening 418 extending through the first sidewall 202 from the inside of the chamber 122 to the outside of the chamber 160. The feedthrough opening 418 may have an opening formed through the total thickness of the first sidewall 202 to enable an electrical connection between the plasma power / control system 112 and the internal filament 404. Furthermore, the feedthrough opening 418 may be constructed and positioned to seal the chamber interior 122 from the chamber exterior 160, allowing the chamber body to be placed under vacuum. Additionally, the feedthrough opening 418 may be constructed and positioned to prevent electrical short circuits between the contacts (first filament contact 414, second filament contact 416) and the internal filament 404. Furthermore, the feedthrough opening 418 may provide a support assembly for the internal filament 404 in the chamber interior 122, thereby maintaining the optimal position of the internal filament 404 relative to the internal elements of the chamber interior 122. In such embodiments, the internal filament 404 may be supported in a cantilever configuration as described below.

[0072] Figure 5 shows a cross-sectional view of the chamber arrangement 402 (shown in Figure 4) when cut along the AA plane (shown in Figure 1).

[0073] In various embodiments, the internal filament 404 is supported within the chamber interior 122 between the injection flange 126 and the substrate support 138 by a cantilever configuration. In such embodiments, as shown in Figure 5, in the cantilever configuration, the internal filament 404 is supported by the first side wall 202 and not by the second side wall 204 (or vice versa).

[0074] According to embodiments of the present disclosure, the internal filament 404 may include a single continuous (e.g., electrical / physical) filament. In some embodiments, the internal filament 404 comprises an upper filament section 502 and a lower filament section 504 (see Figure 5). In some embodiments, the upper filament section 502 and the lower filament section 504 are proximal or adjacent to each other, while sufficient distance is maintained between the two filament sections to prevent electrical short circuits between the two filament sections (upper filament section 502, lower filament section 504).

[0075] In various embodiments, the internal filament 404 is positioned vertically within the chamber interior 122 (i.e., along the vertical chamber axis 506). This positions the internal filament 404 near the injection ports 128 (as shown in Figure 5). In some embodiments, the internal filament 404 is positioned vertically within the chamber interior 122 adjacent to the injection ports 128. In some embodiments, the internal filament 404 is positioned near the injection ports 128 so as to intersect the flow path of the gas-phase process gas into the chamber interior 122.

[0076] Figure 6 shows a cross-sectional view of chamber configuration 602 when cut along the AA plane (as shown in Figure 1). Chamber configuration 602 can be similar to chamber configuration 402 in Figures 4 and 5, except for the configuration of the internal filaments inside the chamber.

[0077] According to embodiments of the present disclosure, the chamber arrangement 602 includes an internal filament 604. The internal filament 604 can be positioned (both longitudinally and vertically) as described above. In some embodiments, the internal filament 604 includes an upper filament section 606 and a lower filament section 608, as described above.

[0078] According to embodiments of the present disclosure, the internal filament 604 may include a first end 610 supported by a first side wall 202 and a second end 612 supported by a second side wall 204. In such embodiments, the internal filament 604 is supported by both the lateral side walls (first side wall 202, second side wall 204) of the chamber body 136.

[0079] In some embodiments, the first end 610 of the internal filament 604 may be supported by the first side wall 202 by an assembly including a first filament contact 616, a second filament contact 618, and a feed-through opening 620 (as described above). In some embodiments, the chamber arrangement 602 may include a filament support 614 configured to support the second end 612 of the internal filament 604 at the second side wall 204. In some embodiments, the filament support 614 is located inside the chamber 122. In some embodiments, the filament support 614 includes an insulating material such as quartz and / or silicon carbide. In various embodiments, the filament support 614 is constructed from quartz. In some embodiments, the filament support 614 may be an integral element of the chamber body 136.

[0080] Figure 7 shows a cross-sectional view of chamber configuration 702 when cut along the AA plane (as shown in Figure 1). Chamber configuration 702 can be the same as chamber configurations 402 and 602, except for the configuration of the internal filaments inside the chamber.

[0081] According to an example of the present disclosure, the chamber arrangement 702 includes an internal filament 704. The internal filament 704 can be positioned (both longitudinally and perpendicularly) as described above with reference to internal filaments 404 and 604.

[0082] In various embodiments, the internal filament 704 may include a first end 706 supported by a first side wall 202 and a second end 708 supported by a second side wall 204. For example, the internal filament 704 may be supported by both the lateral side walls (first side wall 202, second side wall 204) of the chamber body 136. In the chamber configuration 702, the first end 706 of the internal filament 704 may be supported by the first side wall 202 by an assembly including a first filament contact 714 and a first feed-through opening 710, and the second end 708 of the internal filament 704 may be supported by the second side wall 204 by an assembly including a second filament contact 716 and a second feed-through opening 712. In such embodiments, the internal filament 704 is electrically coupled to an external plasma power / control system (such as the plasma power / control system 112 in Figure 1) by a first filament contact 714 extending through a first sidewall 202 and by a second filament contact 716 extending through a second sidewall 204 on the opposite side of the first sidewall 202.

[0083] Figures 8 and 9 show the chamber configuration 802. For example, Figure 8 shows a cross-sectional view of the chamber configuration 802 when cut in the AA plane (as shown in Figure 1), and Figure 9 shows a schematic plan view of the chamber configuration 802. The chamber configuration 802 can be similar to the chamber configurations 402, 602, and 702, except for the configuration of the internal filaments inside the chamber.

[0084] According to embodiments of the present disclosure, the chamber arrangement 802 comprises a plurality of internal filaments 804. In such embodiments, each of the plurality of internal filaments 804 is positioned proximal to one of the plurality of injection ports 128 such that each of the plurality of internal filaments 804 intersects with an individual flow path 904 of gas-phase process gas introduced by one of the plurality of injection ports 128. In such embodiments, each of the plurality of internal filaments 804 may be positioned longitudinally and perpendicularly to the chamber interior 122 so as to be proximal to and / or adjacent to one of the injection ports of the plurality of injection ports 128.

[0085] The multiple internal filaments 804 can be individually electrically contacted and controlled by the plasma power / control system 112 (as shown in Figure 1). In some embodiments, each of the internal filaments of the multiple internal filaments includes a first contact and a second contact routed from inside the chamber 122 to outside the chamber 160 and thereon to the plasma power / control system 112. For example, Figures 8 and 9 show an exemplary single internal filament 810 (of the multiple internal filaments 804) having a first contact 806 and a second contact 808. Each of the single internal filaments (e.g., 810) constituting the multiple internal filaments 804 may include a first contact and a second contact.

[0086] In some embodiments, each of the first and second contacts that electrically connect a plurality of internal filaments 804 to the plasma power / control system 112 may be routed to the outside of the chamber 160 via the injection flange 126. In one embodiment, a series of feedthroughs may be located from the inside of the chamber 122 (e.g., through the front surface 162 of the injection flange 126) through the injection flange 126 to the outside of the chamber 160 and through thereto to the plasma power / control system 112, as shown in Figure 9 by an exemplary flange feedthrough 906. In some embodiments, the injection flange 126 comprises a single flange feedthrough through which all the first and second contacts are routed from the inside of the chamber 122 to the outside of the chamber 160 (not shown).

[0087] In some embodiments, each of the first and second contacts that electrically connect a plurality of internal filaments 804 to the plasma power / control system 112 may be routed to the outside of the chamber 160 through one or more feedthrough openings located within the wall of the chamber body 136. In such embodiments, the feedthrough openings may include a first feedthrough opening 710 and / or a second feedthrough opening 712, as shown in Figure 7.

[0088] As shown in Figure 8 and described above with reference to Figure 3, the chamber configuration 802 may include a gas distribution assembly 302. The gas distribution assembly 302 may be configured to control the flow rate of gas-phase process gas through each of the individual injection ports by using a plurality of gas lines 306 and their associated flow controllers 304. In some embodiments, together with a plurality of individually controllable internal filaments 804, the gas distribution assembly 302 may provide means for altering the properties of the plasma and from there for generating reactive species perpendicularly across the width of the chamber interior 122 (i.e., perpendicular to the longitudinal axis 156) and further across the substrate 146 located inside the chamber. In such embodiments, the uniformity of the epitaxial layer 144 deposited on the substrate 146 may be controlled and / or improved. In some embodiments, the individual flows to each of the plurality of injection ports are controlled using the gas distribution assembly 302 to control the uniformity of the epitaxial layer 144 deposited on the substrate 146. In some embodiments, each of the internal filaments 804 is controlled by a plasma power / control system 112 to control the uniformity of the epitaxial layer 144 deposited on the substrate 146. In some embodiments, the uniformity of the epitaxial layer 144 deposited on the substrate 146 may be controlled by both a gas distribution assembly 302 and a plasma power / control system 112.

[0089] According to embodiments of the present disclosure, a plasma generating means for generating reactive species inside a chamber may comprise one or more external elements. In some embodiments, one or more external elements may be positioned around the outside of the chamber. In such embodiments, the external elements may be positioned around the outside of the chamber and may be supported by the chamber body between the injection flange and the substrate support.

[0090] In various embodiments, the external elements for generating reaction species inside the chamber may include a pair of external electrodes.

[0091] Figure 10 shows a cross-sectional view of a chamber configuration 1002 having a pair of electrodes. In various embodiments, the pair of external electrodes comprises an upper electrode 1004 positioned above the upper wall 148 of the chamber body 136 and a lower electrode 1006 positioned below the lower wall 150 of the chamber body 136. In such embodiments, the upper electrode 1004 and the lower electrode are positioned longitudinally between the injection flange 126 and the substrate support 138. In some embodiments, the upper electrode 1004 and the lower electrode 1006 are longitudinally proximal to or adjacent to a plurality of injection ports (as shown in the exemplary injection port 128 in Figure 10). In such embodiments, the upper electrode 1004 includes an upper electrode contact 1008, and the lower electrode 1006 includes a lower electrode contact 1010 for connecting the upper and lower electrodes to a plasma power / control system 112.

[0092] Figure 11 shows a cross-sectional view of a chamber configuration 1102 having a pair of external electrodes. In various embodiments, the pair of external electrodes may include a first lateral electrode 1104 positioned proximal to the outer surface of the first side wall 202 and a second lateral electrode 1106 positioned proximal to the outer surface of the second side wall 204 opposite to the first side wall 202.

[0093] In some embodiments, the first lateral electrode 1104 and the second lateral electrode 1106 are longitudinally positioned between the injection flange 126 and the substrate support 138. In some embodiments, the first lateral electrode 1104 and the second lateral electrode 1106 are longitudinally proximal to or adjacent to a plurality of injection ports 128. In such embodiments, the first lateral electrode 1104 includes a first lateral electrode contact 1108, and the second lateral electrode 1106 includes a second lateral electrode contact 1110 for connecting the first and second lateral electrodes to a plasma power / control system 112.

[0094] In various embodiments, the external elements for generating reactive species inside the chamber may comprise one or more external coils. In such embodiments, one or more external coils may extend around the outside of the chamber between the injection flange and the substrate support.

[0095] Figure 12 is a cross-sectional view of a chamber configuration 1202 according to one or more embodiments of the present disclosure. In various embodiments, the chamber configuration 1202 comprises a first external coil 1204 extending laterally around the chamber exterior 160 and longitudinally proximal to the injection flange 126, and a second external coil 1206 extending laterally around the chamber exterior 160 and longitudinally proximal to the substrate support 138. In some embodiments, the first external coil 1204 is connected to a plasma power / control system 112 by a first coil contact 1208, and the second external coil 1206 is connected to a plasma power / control system 112 by a second coil contact 1210. In some embodiments, the first external coil 1204 may be positively biased, and the second external coil 1206 may be negatively biased.

[0096] As shown in Figure 1, various embodiments provided may include a semiconductor processing system 100 comprising a controller 110 (which may be incorporated into a plasma power / control system 112) which can be configured to communicate with and control the operation of various other components of the semiconductor processing system 100 (including the associated chamber arrangement shown in Figures 2 to 12). For example, the controller 110 can control plasma generating means (e.g., internal elements 114 and / or external elements 116) by controlling one or more of plasma power and ignition. The controller 110 can control the flow of gas-phase process gas from the injection flange into the chamber interior 122. The controller 110 can control the flow of reactive species generated inside the chamber on the substrate support 138. The controller 110 controls the placement of the substrate 146 on the substrate support 138, the heating of the substrate (for example, using the upper heater element array 140 and / or the lower heater element array 142), and / or the flow of one or more gases provided by the gas supply source assembly, and can also control the gas distribution assembly 302 to the injection flange 126.

[0097] In various embodiments, the controller comprises a processor and a memory having instructions recorded in the memory, which, when read by the processor, instructs the processor to place a substrate on a substrate support, provide a controlled flow of gas-phase process gas to an injection flange and through it into the chamber, activate a plasma generation means, generate reactive species from the gas-phase process gas into the chamber between the injection flange and the substrate support in the plasma generation zone, and deposit one or more epitaxial layers on the substrate.

[0098] The various embodiments provided include a method for depositing an epitaxial layer using the semiconductor processing system and chamber configuration described above. Figure 13 shows a flow 1300 illustrating a method for depositing an epitaxial layer on a substrate by a plasma-assisted chemical vapor deposition process, the method comprising: (step 1302) a chamber body having an upper wall, a lower wall, a first side wall, and a second side wall opposite the first side wall, wherein the upper wall extends longitudinally between an injection end and a discharge end on the longitudinal opposite side, and the lower wall is below and parallel to the upper wall; (step 1304) placing a substrate on a substrate support disposed inside the chamber between the injection end and the discharge end; (step 1306) introducing a gas-phase process gas into the chamber through an injection flange having a plurality of injection ports, wherein the injection flange is coupled to the injection end of the chamber body; (step 1308) generating reactive species inside the chamber in a plasma generation zone disposed between the injection flange and the substrate support; and (step 1310) depositing one or more epitaxial layers on the substrate.

[0099] In some embodiments, the flow 1300 further includes heating the substrate to a deposition temperature using a heater element array supported around the outside of the chamber and optically coupled to the substrate support, the heater element array including a plurality of lower linear lamps supported below the chamber body and optically coupled to the substrate support by the quartz material forming the chamber body, and a plurality of upper linear lamps supported above the chamber body and optically coupled to the substrate support by the quartz material forming the chamber body.

[0100] For the purpose of summarizing the advantages of the present invention and the advantages achieved over the prior art, certain objectives and advantages of the present invention are described above herein. Naturally, it can be understood that not all such objectives or advantages are necessarily achieved according to any particular embodiment of the present invention. Accordingly, it can be recognized by those skilled in the art that the present invention may be embodied or practiced in a manner that achieves or optimizes one or a group of advantages as taught or suggested herein, without necessarily achieving other objectives or advantages as taught or suggested herein.

[0101] All of the embodiments described above may be intended to fall within the scope of the present invention disclosed herein. While these embodiments and other embodiments may be readily apparent to those skilled in the art from the detailed description of specific embodiments by referring to the accompanying drawings, the present invention is not limited to any specific embodiments disclosed.

Claims

1. A semiconductor processing system configured to perform a plasma-enhanced epitaxial deposition process, A chamber body having an upper wall, a lower wall, a first side wall, and a second side wall opposite the first side wall, wherein the upper wall extends longitudinally between the injection end and the discharge end opposite in the longitudinal direction, and the lower wall is below and parallel to the upper wall, A substrate support configured to support the substrate and disposed inside the chamber of the chamber body between the injection end and the discharge end, An injection flange having a plurality of injection ports connected to the injection end and configured to introduce a gas phase process gas into the chamber, A semiconductor processing system comprising a plasma generation means configured to generate reactive species from the gas-phase process gas inside the chamber in a plasma generation zone positioned between the injection flange and the substrate support.

2. The semiconductor processing system according to claim 1, wherein the plasma generation means comprises one or more internal elements disposed inside the chamber.

3. The semiconductor processing system according to claim 2, wherein the plasma generation means comprises an internal filament positioned longitudinally between the injection flange and the substrate support.

4. The semiconductor processing system according to claim 3, wherein the internal filament is positioned near the plurality of injection ports so as to intersect with the flow path of the gas phase process gas into the chamber body.

5. The semiconductor processing system according to claim 4, wherein the internal filament extends perpendicularly between the first side wall and the second side wall opposite the first side wall.

6. The semiconductor processing system according to claim 5, wherein each internal filament is electrically coupled to an external plasma power / control system by a first contact extending from inside the chamber to outside the chamber body through the first side wall and a second contact extending from inside the chamber to outside the chamber through the first side wall.

7. The semiconductor processing system according to claim 6, wherein the internal filament is supported by the first side wall by a cantilever configuration.

8. The semiconductor processing system according to claim 5, wherein the internal filament is electrically coupled to a plasma power / control system by a first contact extending through the first sidewall and by a second contact extending through the second sidewall opposite the first sidewall.

9. The semiconductor processing system according to claim 3, wherein the internal filament is one of a plurality of internal filaments, and each of the plurality of internal filaments is positioned proximal to one of the plurality of injection ports such that it intersects with an individual flow path of the gas phase process gas introduced by one of the plurality of injection ports.

10. The semiconductor processing system according to claim 9, wherein each of the plurality of internal filaments is electrically coupled to a plasma power / control system by a first contact and a second contact.

11. The semiconductor processing system according to claim 1, wherein the plasma generation means comprises one or more external elements positioned around the outside of the chamber.

12. The semiconductor processing system according to claim 11, wherein the plasma generation means comprises a pair of external electrodes positioned around the outside of the chamber.

13. The semiconductor processing system according to claim 12, wherein the pair of external electrodes comprises an upper electrode positioned above the upper wall of the chamber body and a lower electrode positioned below the lower wall of the chamber body.

14. The semiconductor processing system according to claim 12, wherein the pair of external electrodes comprises a first lateral electrode positioned proximal to the outer surface of the first side wall and a second lateral electrode positioned proximal to the outer surface of the second side wall opposite to the first side wall.

15. The semiconductor processing system according to claim 11, wherein the plasma generation means comprises one or more external coils extending around the outside of the chamber body between the injection flange and the substrate support.

16. The semiconductor processing system according to claim 11, wherein the plasma generation means comprises a first external coil extending laterally around the outside of the chamber and longitudinally proximal to the injection flange, and a second external coil extending laterally around the outside of the chamber and longitudinally proximal to the substrate support.

17. The semiconductor processing system according to claim 1, wherein the injection flange further comprises a plurality of flow controllers configured to control the flow of the gas phase process gas from the gas supply source assembly to the plurality of injection ports and through them into the chamber.

18. The semiconductor processing system according to claim 17, wherein the gas supply source assembly comprises a silicon precursor supply source that is in fluid communication with the injection flange, and the reactant species comprises one or more of silicon radicals, metastable silicon, and silicon ions.

19. The semiconductor processing system according to claim 1, wherein the chamber body has a plurality of external ribs that extend laterally around the outside of the chamber and are spaced apart from each other in the longitudinal direction between the injection end and the discharge end on the opposite side in the longitudinal direction of the chamber body.

20. The chamber body is further supported around the outside and optically coupled to the substrate support, comprising a heater element array. The aforementioned heater element array is A plurality of lower linear lamps are supported below the chamber body and optically coupled to the substrate support by the quartz material forming the chamber body, The semiconductor processing system according to claim 19, further comprising: a plurality of upper linear lamps supported above the chamber body and optically coupled to the substrate support by the quartz material forming the chamber body.

21. The controller further includes a processor and memory having instructions recorded in memory, When the aforementioned instruction is read by the processor, the processor will be informed: Placing the substrate on the substrate support, The controlled flow of the gas phase process gas is supplied to the injection flange, through which it is supplied to the interior of the chamber. The semiconductor processing system according to claim 20, comprising activating the plasma generation means to generate the reaction species from the gas phase process gas in the plasma generation zone, and depositing one or more epitaxial layers on the substrate.

22. A method for depositing an epitaxial layer on a substrate by a plasma-assisted chemical vapor deposition process, A chamber body having an upper wall, a lower wall, a first side wall, and a second side wall opposite the first side wall, wherein the upper wall extends longitudinally between the injection end and the discharge end opposite in the longitudinal direction, and the lower wall is below and parallel to the upper wall, The substrate is placed on a substrate support arranged inside the chamber between the injection end and the discharge end, Introducing a gas phase process gas into the chamber through an injection flange having multiple injection ports, wherein the injection flange is coupled to the injection end of the chamber body. By activating a plasma generation means configured to decompose the gas phase process gas into reactive species, the reactive species are generated inside the chamber in a plasma generation zone located between the injection flange and the substrate support. A method comprising depositing one or more epitaxial layers on the substrate.

23. The method further includes heating the substrate to the deposition temperature using a heater element array supported around the outside of the chamber and optically coupled to the substrate support, The aforementioned heater element array is A plurality of lower linear lamps are supported below the chamber body and optically coupled to the substrate support by the quartz material forming the chamber body, The method according to claim 22, further comprising: a plurality of upper linear lamps supported above the chamber body and optically coupled to the substrate support by the quartz material forming the chamber body.

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