Organometallic complexes and light-emitting devices

Abstract

This invention provides novel organometallic complexes and light-emitting devices. [Solution] Provide an organometallic complex represented by general formula (G1). In general formula (G1), R 1 ~R 23 Each of these independently represents one of the following: hydrogen (including deuterium), a C1 to C10 alkyl group, a C1 to C10 alkoxy group, a C1 to C20 silyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, and a cyano group. JPEG2026069480000024.jpg56167

Description

Technical Field

[0001] One aspect of the present invention relates to an organometallic complex, an organic compound, a light-emitting device, a light-receiving device, a light-emitting and light-receiving device, a light-emitting device, a light-emitting and light-receiving device, a display device, an electronic device, a lighting device, and an electronic device. Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, as the technical field of one aspect of the present invention disclosed in this specification, semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, imaging devices, their driving methods, or their manufacturing methods can be cited as an example.

Background Art

[0002] The practical application of organic EL devices (organic EL elements), typified by light-emitting devices, light-receiving devices, and light-emitting and light-receiving devices that utilize electroluminescence (EL) using organic compounds, is progressing.

[0003] Organic EL elements are self-emitting, can be driven at low voltage, and are surface-emitting. Therefore, organic EL elements can be used in lighting devices. Also, if the light emission of an organic EL element is white light emission, red light emission, blue light emission, or green light emission, it can also be used as one of the display elements of a display device.

[0004] As described above, lighting devices or display devices using organic EL elements are very suitable for use in various electronic devices, and research and development are being advanced to obtain organic EL elements having better characteristics.

[0005] Also, Patent Document 1 discloses a phosphorescent complex containing platinum.

Prior Art Documents

Patent Documents

[0006] [Patent Document 1] Japanese Patent Publication No. 2023-141131 [Overview of the project] [Problems that the invention aims to solve]

[0007] One aspect of the present invention aims to provide a novel organometallic complex.

[0008] In one aspect of the present invention, the non-radiative rate constant (k nr The objective is to provide an organometallic complex with a small ) ratio. Alternatively, in one aspect of the present invention, the objective is to provide a light-emitting device with high luminescence efficiency. Alternatively, in one aspect of the present invention, the objective is to provide any of the following: a light-emitting device, light-emitting apparatus, electronic device, display device, or electronic device with low power consumption.

[0009] The present invention only needs to solve one of the above-mentioned problems. [Means for solving the problem]

[0010] One aspect of the present invention is an organometallic complex represented by the following general formula (G1).

[0011] [ka]

[0012] In the above general formula (G1), R 1 ~R 23 Each of these independently represents one of the following: hydrogen (including deuterium), a C1 to C10 alkyl group, a C1 to C10 alkoxy group, a C1 to C20 silyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a cyano group.

[0013] Furthermore, one aspect of the present invention is an organometallic complex represented by structural formula (100).

[0014] [ka]

[0015] One aspect of the present invention is a light-emitting device using the above-mentioned organometallic complex. Another aspect is a light-emitting apparatus having the above-mentioned organometallic complex and a light-receiving device.

[0016] Furthermore, one aspect of the present invention is a light-emitting device having the above-described light-emitting device and a transistor or a substrate.

[0017] Furthermore, one aspect of the present invention is an electronic device having the above-described light-emitting device and a detection unit, an input unit, or a communication unit.

[0018] Furthermore, one aspect of the present invention is a lighting device having a light-emitting device having the above configuration and a housing. [Effects of the Invention]

[0019] In one aspect of the present invention, a light-emitting device with high luminescence efficiency can be provided. Alternatively, in one aspect of the present invention, the non-radiative rate constant (k nr ) can be provided as an organometallic complex with low power consumption. Alternatively, in one aspect of the present invention, any of the following can be provided: a light-emitting device, light-emitting apparatus, electronic device, display device, or electronic device with low power consumption.

[0020] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other effects from the description in the specification, drawings, and claims. [Brief explanation of the drawing]

[0021] [Figure 1] Figures 1(A) and 1(B) illustrate the configuration of a light-emitting device according to an embodiment. [Figure 2] Figures 2(A) to 2(E) illustrate the configuration of a light-emitting device according to an embodiment. [Figure 3] Figures 3(A) and 3(B) are a top view and a cross-sectional view of the light-emitting device. [Figure 4] Figures 4(A) through 4(D) are diagrams illustrating light-emitting devices. [Figure 5] Figures 5(A) to 5(E) are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 6] Figures 6(A) to 6(E) are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 7] Figures 7(A) to 7(C) are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 8] Figures 8(A) to 8(C) are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 9] Figures 9(A) to 9(C) are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 10] Figures 10(A) to 10(C) are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 11] Figures 11(A) to 11(C) are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 12] Figures 12(A) to 12(G) are top views showing examples of pixel configurations. [Figure 13] Figures 13(A) to 13(I) are top views showing examples of pixel configurations. [Figure 14] Figures 14(A) and 14(B) are perspective views showing examples of the display module configuration. [Figure 15] Figures 15(A) and 15(B) are cross-sectional views showing examples of the configuration of a light-emitting device. [Figure 16] Figure 16 is a perspective view showing an example of the configuration of a light-emitting device. [Figure 17]Figure 17(A) is a cross-sectional view showing an example of the configuration of a light-emitting device. Figures 17(B) and 17(C) are cross-sectional views showing an example of the configuration of a transistor. [Figure 18] Figure 18 is a cross-sectional view showing an example of the configuration of a light-emitting device. [Figure 19] Figures 19(A) to 19(D) are cross-sectional views showing examples of the configuration of a light-emitting device. [Figure 20] Figures 20(A) to 20(D) show examples of electronic devices. [Figure 21] Figures 21(A) through 21(F) show examples of electronic devices. [Figure 22] Figures 22(A) to 22(G) show examples of electronic devices. [Figure 23] Figure 23 shows the 1H NMR spectrum of the organometallic complex prepared in Example 1. [Figure 24] Figure 24 illustrates the absorption and emission spectra of the organometallic complex prepared in Example 1. [Figure 25] Figure 25 illustrates the thermogravimetric and differential thermal analysis of the organometallic complex prepared in Example 1. [Figure 26] Figure 26 is a diagram illustrating the configuration of the device according to Example 2. [Figure 27] Figure 27 illustrates the brightness-current density characteristics of the device according to Example 2. [Figure 28] Figure 28 illustrates the brightness-voltage characteristics of the device according to Example 2. [Figure 29] Figure 29 illustrates the current efficiency-current density characteristics of the device according to Example 2. [Figure 30] Figure 30 illustrates the current density-voltage characteristics of the device according to Example 2. [Figure 31] Figure 31 illustrates the power efficiency-current density characteristics of the device according to Example 2. [Figure 32] Figure 32 illustrates the external quantum efficiency-current density characteristics of the device according to Example 2. [Figure 33]Figure 33 illustrates the emission spectrum of the device according to Example 2. [Modes for carrying out the invention]

[0022] Embodiments of the present invention will be described in detail below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and its form and details can be modified in various ways. Furthermore, the present invention is not to be interpreted as being limited to the embodiments described below.

[0023] In this specification, the terms "first" and "second" may be used for convenience to understand the technical content or to identify each component. Therefore, the terms "first" and "second" do not limit the number of components. Nor do the terms "first" and "second" limit the order of the components. Furthermore, the terms "first" and "second" or the identification codes used in this specification may not correspond to the terms or identification codes in the claims of this patent.

[0024] In this specification, "deuterated organic compound" refers to an organic compound in which, when focusing on hydrogen atoms at specific positions within the organic compound, the proportion of deuterium present is greater than the natural abundance of deuterium. This proportion is preferably sufficiently greater than the natural abundance. "Sufficiently" means, for example, that 7.5% or more is deuterated. The deuteration of an organic compound can be confirmed by methods such as NMR and mass spectrometry. In this specification, hydrogen includes protium and deuterium. Deuterium refers to the stable isotope of hydrogen with a mass number of 2. Protium refers to the stable isotope of hydrogen with a mass number of 1.

[0025] (Embodiment 1) This embodiment describes an organometallic complex, which is one aspect of the present invention.

[0026] ≪Example 1 of an organic compound≫ One aspect of the present invention is an organic compound represented by the general formula (G1).

[0027] [ka]

[0028] However, in the general formula (G1), R 1 ~R 23 Each of these independently represents one of the following: hydrogen (including deuterium), a C1 to C10 alkyl group, a C1 to C10 alkoxy group, a C1 to C20 silyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a cyano group.

[0029] Furthermore, the organic compound represented by general formula (G1), which is one embodiment of the present invention, has a phenyl group at the 4-position of the pyridine ring that coordinates to the central metal (Pt). Having a phenyl group at the 4-position of the pyridine ring broadens the distribution of LUMO in the pyridine ring. In other words, the organic compound represented by general formula (G1), which is one embodiment of the present invention, has a structure that prevents internal relaxation to vibrational levels where non-radiative deactivation is likely to occur when vibrational relaxation occurs from a higher-order triplet excited state in the excited state, and thus can increase the luminescence efficiency.

[0030] Furthermore, in the general formula (G1), R m Specific examples of substituents represented by (m being any natural number from 1 to 23) are shown below.

[0031] Examples of alkyl groups having 1 to 10 carbon atoms include methyl group, ethyl group, propyl group, isopropyl group, butyl group, sec-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, sec-pentyl group, tert-pentyl group, neopentyl group, hexyl group, isohexyl group, sec-hexyl group, tert-hexyl group, neohexyl group, 3-methylpentyl group, 2-methylpentyl group, 2-ethylbutyl group, 1,2-dimethylbutyl group, 2,3-dimethylbutyl group, octyl group, isooctyl group, sec-octyl group, tert-octyl group, nonyl group, isononyl group, sec-nonyl group, tert-nonyl group, decanyl group, isodecanyl group, sec-decanyl group, and tert-decanyl group.

[0032] Furthermore, examples of alkoxy groups having 1 to 10 carbon atoms include methoxy, ethoxy, propoxy, t-butoxy, pentyloxy, octyloxy, allyloxy, cyclohexyloxy, phenoxy, and benzyloxy groups.

[0033] Furthermore, examples of silyl groups having 1 to 20 carbon atoms include trimethylsilyl group, triethylsilyl group, dimethylpropylsilyl group, tert-butyldimethylsilyl group, triisopropylsilyl group, dimethyloctadecylsilyl group, tert-butyldiphenylsilyl group, benzyldimethylsilyl group, and triphenylsilyl group.

[0034] Examples of aryl groups having 6 to 30 carbon atoms include phenyl, biphenyl, terphenyl, naphthyl, anthryl, fluorenyl, benzofluorenyl, dibenzofluorenyl, diphenylfluorenyl, spirobifluorenyl, pyrenyl, phenanthryl, triphenylenyl, perilenyl, tetracenyl, and chrysenyl groups.

[0035] Furthermore, examples of heteroaryl groups having 3 to 30 carbon atoms include groups having pyridine rings, pyrazine rings, pyrimidine rings, pyridazine rings, triazine rings, quinoline rings, quinazoline rings, isoquinoline rings, pyrrole rings, naphthyridine rings, phenantholidine rings, phenanthroline rings, quinoxaline rings, imidazole rings, benzimidazole rings, oxazole rings, isoxazole rings, thiazole rings, isothiazole rings, benzofuran rings, xanthene rings, thioxanthene rings, dihydroacridine rings, acridine rings, and spiro[5H-cyclopenta[2,1-b:3,4-b']dipyridine-5,9'-[9H]fluorene] rings.

[0036] In addition, in general formula (G1), hydrogen may be replaced with deuterium as appropriate.

[0037] <Specific example> Next, a specific example of an organometallic complex, which is one embodiment of the present invention and has a structure represented by general formula (G1), is shown below.

[0038] [ka]

[0039] [ka]

[0040] [ka]

[0041] The organometallic complexes represented by structural formulas (100) to (117) above are examples of organometallic complexes represented by the general formula (G1) above, but the organometallic complexes of one aspect of the present invention are not limited thereto.

[0042] <Methods for synthesizing organic compounds> Next, as an example of the organic compound of one embodiment of the present invention, a method for synthesizing an organic compound represented by the general formula (G1) will be described. Note that various reactions can be applied as the synthesis method of the general formula (G1), and it is not limited to the following synthesis method.

[0043] For example, a compound represented by the general formula (G1) can be synthesized by the following simple synthesis scheme.

[0044] First, as shown in the following synthesis scheme (s1-1), a nucleophilic substitution reaction is carried out between a carbazole halide (A’1) and a pyridine halide (A’2) to obtain an intermediate (A’3). Then, the intermediate (A’3) is reacted with a transition metal catalyst and a base in a mixed solvent of dimethyl sulfoxide (abbreviation: DMSO) and water for hydroxylation to obtain a pyridylcarbazole derivative (A’4).

[0045]

Chemical formula

[0046] In the above synthesis scheme (s1-1), R 1 to R 11 each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, and a cyano group. Also, X 1 and X 2 represent a halogen. Note that DMSO may be an organic solvent such as ethanol or 1,4-dioxane. As the base, sodium tert-butoxide, sodium hydroxide, lithium hydroxide, etc. may be used. As the transition metal catalyst, a copper catalyst such as copper(I) chloride or copper(II) oxide, or a palladium catalyst such as Pd2(dba)3, etc. may be used.

[0047] Next, as shown in the synthesis scheme (s1-2) below, the pyridylcarbazole derivative (A'4) obtained in the above synthesis scheme (s1-1) and the halogenated benzimidazole derivative (A'5) are crosslinked with ether to obtain an intermediate (A'6). Then, the intermediate (A'6) is reacted with a hypervalent iodine reagent (A'7) to obtain a pyridylcarbazole derivative (A'8).

[0048] [ka]

[0049] In addition, in the above synthesis scheme (s1-2), R 1 ~R 23 Each of these independently represents one of the following: hydrogen (including deuterium), a C1 to C10 alkyl group, a C1 to C10 alkoxy group, a C1 to C20 silyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a cyano group. Also, X 3 represents halogen. Also, X 3 Alternatively, an intermediate with a hydroxyl group can be synthesized, and by ether-bridging it with the intermediate (A'3) from synthesis scheme (s1-1), the intermediate (A'6) from synthesis scheme (s1-2) can be synthesized.

[0050] Next, the organometallic complex represented by general formula (G1) is obtained by reacting the pyridylcarbazole derivative (A'8) obtained in the above synthesis scheme (s1-2) with a platinum metal compound containing a halogen (such as dichloro(1,5-cyclooctadiene)platinum(II)), as shown in the synthesis scheme (s1-3).

[0051] [ka]

[0052] In addition, in the above synthesis scheme (s1-3), R 1 ~R 23Each of these independently represents one of the following: hydrogen (including deuterium), a C1 to C10 alkyl group, a C1 to C10 alkoxy group, a C1 to C20 silyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a cyano group.

[0053] Since the aforementioned compounds (A'1), (A'2), (A'3), (A'4), (A'5), (A'6), (A'7), and (A'8) are commercially available in various forms or can be synthesized, a large number of organometallic complexes represented by general formula (G1) can be synthesized. Therefore, one embodiment of the present invention is characterized by its wide variety of compounds.

[0054] While organic compounds according to one aspect of the present invention can be synthesized as described above, the present invention is not limited thereto, and may be synthesized by other synthesis methods.

[0055] This embodiment can be used in any combination with other embodiments and examples.

[0056] (Embodiment 2) In this embodiment, the configuration of the light-emitting device using the organometallic complex shown in Embodiment 1 will be explained with reference to Figures 2(A) to 2(E).

[0057] <Example of light-emitting device configuration> First, the configuration of a light-emitting device according to one embodiment of the present invention will be described below with reference to Figures 1(A) and (B).

[0058] Figure 1(A) is a schematic cross-sectional view of a light-emitting device 10 according to one embodiment of the present invention.

[0059] The light-emitting device 10 has a pair of electrodes (a first electrode 101 and a second electrode 102) and an organic compound layer 103 provided between the pair of electrodes. The organic compound layer 103 has at least a light-emitting layer 113.

[0060] Furthermore, the organic compound layer 103 shown in Figure 1(A) has functional layers such as a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, and an electron injection layer 115, in addition to the light-emitting layer 113.

[0061] In this embodiment, the first electrode 101 is described as the anode and the second electrode 102 as the cathode, but the configuration of the light-emitting device 10 is not limited to this. In other words, the first electrode 101 may be the cathode and the second electrode 102 as the anode, and the stacking order of the layers between the electrodes may be reversed. That is, the stacking order from the anode side can be hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, and electron injection layer 115.

[0062] The configuration of the organic compound layer 103 is not limited to the configuration shown in Figure 1(A), and can be configured to have at least one selected from the hole injection layer 111, hole transport layer 112, electron transport layer 114, and electron injection layer 115. Alternatively, the organic compound layer 103 may have a functional layer that has functions such as reducing the hole or electron injection barrier, improving hole or electron transport, inhibiting hole or electron transport, or suppressing quenching by electrodes. Each functional layer may be a single layer or a configuration in which multiple layers are stacked.

[0063] Figure 1(B) is a schematic cross-sectional view showing an example of the light-emitting layer 113 shown in Figure 1(A). The light-emitting layer 113 shown in Figure 1(B) comprises a host material 118 (organic compound 118_1 and organic compound 118_2) and a guest material 119.

[0064] <Basic structure of a light-emitting device> The basic structure of a light-emitting device will be described. Figure 2(A) shows a light-emitting device with a structure (single structure) having an organic compound layer containing a light-emitting layer between a pair of electrodes. Specifically, it has a structure in which an organic compound layer 103 is sandwiched between the first electrode 101 and the second electrode 102.

[0065] Furthermore, Figure 2(B) shows a light-emitting device with a laminated structure (tandem structure) having multiple (two layers in Figure 2(B)) organic compound layers (103a, 103b) between a pair of electrodes, and a charge generation layer 106 between the organic compound layers. A light-emitting device with a tandem structure can realize a highly efficient light-emitting device without changing the amount of current.

[0066] The charge generation layer 106 has the function of injecting electrons into one organic compound layer (103a or 103b) and holes into the other organic compound layer (103b or 103a) when a potential difference is created between the first electrode 101 and the second electrode 102. Therefore, in Figure 2(B), when a voltage is applied to the first electrode 101 such that the potential is higher than that of the second electrode 102, electrons are injected from the charge generation layer 106 into the organic compound layer 103a and holes are injected into the organic compound layer 103b.

[0067] Furthermore, from the viewpoint of light extraction efficiency, it is preferable that the charge generation layer 106 is transparent to visible light (specifically, the transmittance of visible light to the charge generation layer 106 is 40% or more). In addition, the charge generation layer 106 can function even if its conductivity is lower than that of the first electrode 101 and the second electrode 102.

[0068] Figure 2(C) shows the laminated structure of the organic compound layer 103 of a light-emitting device according to one embodiment of the present invention. In this case, the first electrode 101 functions as an anode and the second electrode 102 functions as a cathode. The organic compound layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are sequentially laminated on the first electrode 101. The light-emitting layer 113 may be a configuration in which multiple light-emitting layers with different light-emitting colors are laminated. For example, a light-emitting layer containing a red light-emitting substance, a light-emitting layer containing a green light-emitting substance, and a light-emitting layer containing a blue light-emitting substance may be laminated, or laminated via a layer having a carrier transport material. Alternatively, a combination of a light-emitting layer containing a yellow light-emitting substance and a light-emitting layer containing a blue light-emitting substance may be used. However, the laminated structure of the light-emitting layer 113 is not limited to the above. For example, the light-emitting layer 113 may be a structure in which multiple light-emitting layers of the same emission color are stacked. For example, a first light-emitting layer containing a blue light-emitting substance and a second light-emitting layer containing a blue light-emitting substance may be stacked, or a structure in which they are stacked via a layer having a carrier transport material. In the case of a structure in which multiple light-emitting layers of the same emission color are stacked, reliability can be increased compared to a single-layer structure. Also, even when there are multiple organic compound layers as in the tandem structure shown in Figure 2(B), each organic compound layer is stacked sequentially from the anode side as described above. Furthermore, if the first electrode 101 is the cathode and the second electrode 102 is the anode, the stacking order of the organic compound layers 103 is reversed. Specifically, on the first electrode 101, which is the cathode, 111 is an electron injection layer, 112 is an electron transport layer, 113 is a light-emitting layer, 114 is a hole transport layer, and 115 is a hole injection layer.

[0069] The light-emitting layers 113 contained within the organic compound layers (103, 103a, 103b) each contain a light-emitting substance and a combination of multiple substances as appropriate, and can be configured to produce fluorescence emission or phosphorescence emission exhibiting a desired emission color. Alternatively, the light-emitting layers 113 may be arranged in a laminated structure with different emission colors. In this case, the light-emitting substance and other substances used in each laminated light-emitting layer may be made of different materials. Furthermore, a configuration can be used in which different emission colors are obtained from multiple organic compound layers (103a, 103b) as shown in Figure 2(B). In this case as well, the light-emitting substance and other substances used in each light-emitting layer may be made of different materials.

[0070] Furthermore, in a light-emitting device according to one aspect of the present invention, for example, by using a reflective electrode as the first electrode 101 shown in Figure 2(C) and a semi-transparent / semi-reflective electrode as the second electrode 102, and by using a microcavity structure, the light emitted from the light-emitting layer 113 contained in the organic compound layer 103 can be resonated between the two electrodes, thereby strengthening the light emitted from the second electrode 102. Therefore, it is easy to achieve high resolution. In addition, since it is possible to strengthen the light emission intensity in the front direction at a specific wavelength, power consumption can be reduced.

[0071] Furthermore, if the first electrode 101 of the light-emitting device is a reflective electrode consisting of a laminated structure of a reflective conductive material and a translucent conductive material (transparent conductive film), optical adjustment can be performed by controlling the film thickness of the transparent conductive film. Specifically, it is preferable to adjust the optical distance (product of film thickness and refractive index) between the first electrode 101 and the second electrode 102 to be mλ / 2 (where m is an integer of 1 or more) or close to it, with respect to the wavelength λ of light obtained from the light-emitting layer 113.

[0072] Furthermore, in order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferable to adjust the optical distance from the first electrode 101 to the region of the light-emitting layer 113 where the desired light is obtained (light-emitting region), and the optical distance from the second electrode 102 to the region of the light-emitting layer 113 where the desired light is obtained (light-emitting region), so that they are (2m'+1)λ / 4 (where m' is an integer of 1 or more) or near that value. The light-emitting region referred to here is the region in the light-emitting layer 113 where holes and electrons recombine.

[0073] By performing such optical adjustments, the spectrum of specific monochromatic light obtained from the light-emitting layer 113 can be narrowed, resulting in emission with good color purity.

[0074] However, in the above case, the optical distance between the first electrode 101 and the second electrode 102 can be precisely defined as the total thickness from the reflective region of the first electrode 101 to the reflective region of the second electrode 102. However, since it is difficult to precisely determine the reflective regions of the first electrode 101 and the second electrode 102, the above effects can be sufficiently obtained by assuming that any position on the first electrode 101 and the second electrode 102 is the reflective region. Furthermore, the optical distance between the first electrode 101 and the light-emitting layer from which the desired light is obtained can be precisely defined as the optical distance between the reflective region of the first electrode 101 and the light-emitting region of the light-emitting layer from which the desired light is obtained. However, since it is difficult to precisely determine the reflective region of the first electrode 101 and the light-emitting region of the light-emitting layer from which the desired light is obtained, the above effects can be sufficiently obtained by assuming that any position on the first electrode 101 is the reflective region and any position on the light-emitting layer from which the desired light is obtained is the light-emitting region.

[0075] The light-emitting device shown in Figure 2(D) is a light-emitting device having a tandem structure. The tandem structure allows for a light-emitting device capable of high-brightness emission. Furthermore, compared to a single structure, the tandem structure reduces the current required to achieve the same brightness, thereby improving reliability. It also reduces power consumption.

[0076] The light-emitting device shown in Figure 2(E) is an example of a tandem-structured light-emitting device shown in Figure 2(B). As shown in the figure, it has a structure in which three organic compound layers (103a, 103b, 103c) are stacked with charge generation layers (106a, 106b) in between. Each of the three organic compound layers (103a, 103b, 103c) has a light-emitting layer (113a, 113b, 113c), and the light-emitting colors of each light-emitting layer can be freely combined. For example, light-emitting layer 113a can be blue, light-emitting layer 113b can be red, green, or yellow, and light-emitting layer 113c can be blue. Alternatively, light-emitting layer 113a can be red, light-emitting layer 113b can be blue, green, or yellow, and light-emitting layer 113c can be red.

[0077] In the light-emitting device according to one aspect of the present invention described above, at least one of the first electrode 101 and the second electrode 102 is a light-transmitting electrode (such as a transparent electrode or a semi-transparent / semi-reflective electrode). If the light-transmitting electrode is a transparent electrode, the transmittance of visible light of the transparent electrode shall be 40% or more. If it is a semi-transparent / semi-reflective electrode, the reflectance of visible light of the semi-transparent / semi-reflective electrode shall be 20% or more and 80% or less, preferably 40% or more and 70% or less. Furthermore, the resistivity of these electrodes shall be 1 × 10⁻⁶. -2 It is preferable to keep it below Ωcm.

[0078] Furthermore, in the light-emitting device according to one aspect of the present invention described above, if one of the first electrode 101 and the second electrode 102 is a reflective electrode (reflective electrode), the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. In addition, the resistivity of this electrode is 1 × 10⁻⁶. -2 It is preferable to keep it below Ωcm.

[0079] <Specific structure of a light-emitting device> Next, a specific structure of a light-emitting device according to one aspect of the present invention will be described. Here, we will use Figure 2(D), which has a tandem structure, for explanation. The same applies to the configuration of the organic compound layer for the single-structure light-emitting devices shown in Figures 2(A) and 2(C). Furthermore, if the light-emitting device shown in Figure 2(D) has a microcavity structure, the first electrode 101 is formed as a reflective electrode, and the second electrode 102 is formed as a semi-transparent / semi-reflective electrode. Thus, one or more desired electrode materials can be used and formed as a single layer or in a stacked configuration. The second electrode 102 is formed by selecting an appropriate material after the organic compound layer 103b has been formed.

[0080] <Materials for light-emitting devices> ≪Luminous layer≫ The light-emitting layers (113, 113a, 113b) are layers containing a light-emitting material. The light-emitting material that can be used in the light-emitting layers (113, 113a, 113b) can be any material that exhibits a light-emitting color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red. Furthermore, if there are multiple light-emitting layers, a configuration exhibiting different light-emitting colors can be achieved by using different light-emitting materials in each layer (for example, white light emission obtained by combining complementary light-emitting colors). Additionally, a laminated structure in which each light-emitting layer contains a different light-emitting material is also possible.

[0081] Furthermore, the light-emitting layers (113, 113a, 113b) may contain one or more types of organic compounds (host materials, etc.) in addition to the light-emitting substance (guest material).

[0082] Specifically, the structure described using Figure 1(B) of Embodiment 1 can be used as the light-emitting layer 113. In the light-emitting layer 113, the host material 118 is present in the largest amount by weight, and the guest material 119 (phosphorescent compound) is dispersed in the host material 118. Preferably, the T1 level of the host material 118 (organic compound 118_1 and organic compound 118_2) of the light-emitting layer 113 is higher than the T1 level of the guest material (guest material 119) of the light-emitting layer 113.

[0083] As for organic compound 118_1, a material with higher electron transport capabilities than hole transport can be used, resulting in 1 × 10⁻⁶ -6 cm 2 It is preferable that the material has an electron mobility of 1 / Vs or higher. As materials that readily accept electrons (materials with electron transport properties), compounds having a π-electron-deficient heteroaromatic ring skeleton, such as nitrogen-containing heteroaromatic compounds, and zinc or aluminum-based metal complexes can be used. Examples of compounds having a π-electron-deficient heteroaromatic ring skeleton include oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and triazine derivatives. Examples of zinc or aluminum-based metal complexes include metal complexes having a quinoline ligand, a benzoquinoline ligand, an oxazole ligand, or a thiazole ligand.

[0084] Specifically, examples include metal complexes having a quinoline skeleton or a benzoquinoline skeleton, such as tris(8-quinolinolato)aluminum(III) (abbreviated as Alq), tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviated as Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviated as BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviated as BAlq), and bis(8-quinolinolato)zinc(II) (abbreviated as Znq). In addition, metal complexes having oxazole-based or thiazole ligands, such as bis[2-(2-benzoxazolyl)phenolate]zinc(II) (abbreviated as ZnPBO) and bis[2-(2-benzothiazolyl)phenolate]zinc(II) (abbreviated as ZnBTZ), can also be used. Furthermore, in addition to metal complexes, there are also 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviated as PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviated as OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl)phenyl]-9H-carbazole (abbreviated as CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviated as TAZ), and 9-[4-(4,5-diphenyl-4H-1,2,4-triazole-3-yl)phenyl] Heterocyclic compounds such as -9H-carbazole (abbreviation: CzTAZ1), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), vasophenanthroline (abbreviation: BPhen), vasocuproin (abbreviation: BCP), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,[h]Quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]Quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]Quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]Quinoxaline (Abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (Abbreviation: 6mDBTPDBq-II), 2-[3-(3,9'-bi-9H-carbazole-9-yl)phenyl]dibenzo[f,h]quinoxaline (Abbreviation: 2mCzCzPDBq), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (Abbreviation: 4,6mPnP2Pm), 4,6-bis Heterocyclic compounds having a diazine skeleton, such as [3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II) and 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), and 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PC Heterocyclic compounds having a triazine skeleton such as CzPTzn, heterocyclic compounds having a pyridine skeleton such as 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviated as 35DCzPPy) and 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviated as TmPyPB), and heteroaromatic compounds such as 4,4'-bis(5-methylbenzoxazole-2-yl)stilbene (abbreviated as BzOs) can also be used. Among the heterocyclic compounds mentioned above, heterocyclic compounds having a triazine skeleton, a diazine (pyrimidine, pyrazine, pyridazine) skeleton, or a pyridine skeleton are preferred because they are stable and reliable. Furthermore, heterocyclic compounds having these skeletons have high electron transport properties and contribute to reducing the driving voltage. Also, poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,High molecular weight compounds such as 5-diyl) (abbreviated as PF-Py) and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviated as PF-BPy) can also be used. The substances described here are mainly 1 × 10, -6 cm 2 The material must have an electron mobility of / Vs or greater. However, any material with higher electron transport capabilities than holes may be used.

[0085] As for organic compound 118_2, a combination that can form an excited complex with organic compound 118_1 is preferred. Specifically, it is preferable to have a skeleton with high donor potential, such as a π-electron-rich heteroaromatic ring skeleton or an aromatic amine skeleton. Examples of compounds having a π-electron-rich heteroaromatic ring skeleton include heteroaromatic compounds such as dibenzothiophene derivatives, dibenzofuran derivatives, and carbazole derivatives. In this case, it is preferable to select organic compound 118_1, organic compound 118_2, and guest material 119 (phosphorescent compound) such that the emission peak of the excited complex formed by organic compound 118_1 and organic compound 118_2 overlaps with the absorption band of the triplet MLCT (Metal to Ligand Charge Transfer) transition of guest material 119 (phosphorescent compound), more specifically, with the absorption band located at the longest wavelength. This makes it possible to create a light-emitting device with dramatically improved luminescence efficiency. However, when using a thermally activated delayed fluorescence material instead of a phosphorescent compound, it is preferable that the absorption band located at the longest wavelength is a singlet absorption band.

[0086] Furthermore, the following hole-transporting materials can be used as organic compound 118_2.

[0087] As a hole-transporting material, a material with higher hole transport capabilities than electron transport can be used, resulting in a capacity of 1 × 10⁻⁶. -6 cm 2It is preferable that the material has a hole mobility of / Vs or greater. Specifically, aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, etc., can be used. The hole transporting material may also be a polymer compound.

[0088] Examples of materials with high hole transport capabilities include, specifically, aromatic amine compounds such as N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviated as DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviated as DPA3B).

[0089] Furthermore, specific examples of carbazole derivatives include 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzDPA1), 3,6-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzDPA2), and 3,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviated as PCzTP Examples include N2), 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzPCA2), and 3,[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviated as PCzPCN1).

[0090] Other carbazole derivatives that can be used include 4,4'-di(N-carbazolyl)biphenyl (abbreviated as CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviated as TCPB), 9-[4-(10-phenyl-9-antryl)phenyl]-9H-carbazole (abbreviated as CzPA), and 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene.

[0091] Furthermore, aromatic hydrocarbons include, for example, 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), and 2-tert Examples include butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, and 2,5,8,11-tetra(tert-butyl)perylene. In addition, pentacene, coronene, and the like can also be used. Thus, 1 × 10 -6 cm 2 It is more preferable to use aromatic hydrocarbons having a hole mobility of / Vs or higher and having 14 to 42 carbon atoms.

[0092] Aromatic hydrocarbons may also have a vinyl skeleton. Examples of aromatic hydrocarbons having a vinyl skeleton include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviated as DPVBi) and 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviated as DPVPA).

[0093] In addition, polymer compounds such as poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltriphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), or poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD) can also be used.

[0094] Furthermore, materials with high hole transport properties include, for example, 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB or α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviated as TPD), 4,4',4''-tris(carbazole-9-yl)triphenylamine (abbreviated as TCTA), and 4,4',4''-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviated as 1'-TNATA). 4,4',4''-Tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-Tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: m-MTDATA), N,N′-Bis(9,9′-Spirobi[9H-fluoren]-2-yl)-N,N′-Diphenyl-4,4′-Diaminobiphenyl (abbreviation: BSPB), 4-Phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-Pheny Lu-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), N-(9,9-spirobi[9 H-Fluoren]-2-yl)-N,N'N'-triphenyl-1,4-phenylenediamine (abbreviation: DPASF), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazole-3-yl)amine (abbreviation: PCA1BP), N,N'-bis(9-phenylcarbazole-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviation: PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9-phenylcarbazole-3-yl)benzene-1,3,5-triphenyl Min (abbreviation: PCA3B), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: PCAFLP(2)), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazole-2-amine (abbreviation: PCAFLP(2)-02), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazole-3-amine (abbreviation: PCBiF), N-(biphenyl 9,9-dimethyl-9H-fluoren-2-amine (abbreviated as PCBBiF), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluoren-2-amine (abbreviated as PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9′-spirobio[9H-fluoren]-2-amine (abbreviated as PCBASF), N-(9,9-s Pyrobi[9H-fluoren]-2-yl)-N,9-diphenylcarbazole-3-amine (abbreviation: PCASF), N,N'-diphenyl-N,N'-bis(4-diphenylaminophenyl)spirobi[9H-fluoren]-2,7-diamine (abbreviation: DPA2SF), N-[4-(9H-carbazole-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazole-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluoren-2,Aromatic amine compounds such as 7-diamine (abbreviation: YGA2F) can be used. In addition, 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]phenanthrene (abbreviation: PCPPn), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 3,6-bis(3,5-diphenyl Phenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,6-di(9H-carbazole-9-yl)-9-phenyl-9H-carbazole (abbreviation: PhCzGI), 2,8-di(9H-carbazole-9-yl)dibenzothiophene (abbreviation: Cz2DBT), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-I) I) Amine compounds such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviated as DBF3P-II), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviated as DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviated as DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as DBTFLP-IV), and 4-[3-(triphenylene-2-yl)phenyl]dibenzothiophene (abbreviated as mDBTPTp-II), as well as carbazole compounds, thiophene compounds, furan compounds, fluorene compounds, triphenylene compounds, phenanthrene compounds, etc., can be used. Among the compounds mentioned above, those having a pyrrole skeleton, furan skeleton, thiophene skeleton, or aromatic amine skeleton are preferred due to their stability and reliability. Furthermore, compounds having these skeletons exhibit high hole transport properties, contributing to a reduction in driving voltage.

[0095] Furthermore, a fluorescent material can be used in the light-emitting layer. In this case, the excitation energy of the phosphorescent material is transferred to the fluorescent material in the light-emitting layer, resulting in light emission. Since the fluorescent material allows a transition from the singlet excited state to the singlet ground state, its excitation lifetime (emission lifetime) is shorter than that of the phosphorescent material. Therefore, by further using a fluorescent material in the light-emitting layer, a stable and reliable light-emitting device can be fabricated.

[0096] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. Fluorescent materials can be used whose singlet and triplet excitation energy levels are lower than the triplet excitation energy level of the phosphorescent material.

[0097] Specific examples include 5,6-bis[4-(10-phenyl-9-antryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-antryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyren-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl- 9H-Fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazole-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPP) A) N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N',N'-triphenyl-1,4- Phenylenediamine (abbreviation: DPABPA), N,N,N',N',N'',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysen-2,7,10,15-tetraamine (abbreviation: DBC1), Coumarin 30, N,N'-Diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), N,N'-Diphenyl-N,N'-bis(9-phenyl-9H-carbazole-2-yl)naphtho[2,3-b;Examples include 6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02) and 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02).

[0098] Also, 5,9-diphenyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazavorin (abbreviated as DABNA-1), 9-[(1,1'-diphenyl)-3-yl]-N,N,5,11-tetraphenyl-5,9-dihydro-5,9-diaza-13b-boranaphtho[3,2,1-de]anthracene-3-amine (abbreviated as DABNA-2), 2,12-di(tert-butyl)-5,9-di(4-tert-butyl) Nyl)-N,N-diphenyl-5H,9H-[1,4]benzazabolino[2,3,4-kl]phenazabolin-7-amine (abbreviation: DPhA-tBu4DABNA), 2,12-di(tert-butyl)-N,N,5,9-tetra(4-tert-butylphenyl)-5H,9H-[1,4]benzazabolino[2,3,4-kl]phenazabolin-7-amine (abbreviation: tBuDPhA-tBu4DABNA), 2,12-di(tert -butyl)-5,9-di(4-tert-butylphenyl)-7-methyl-5H,9H-[1,4]benzazabolino[2,3,4-kl]phenazabolin (abbreviation: Me-tBu4DABNA), N7,N7,N13,N13,5,9,11,15-octaphenyl-5H,9H,11H,15H-[1,4]benzazabolino[2,3,4-kl][1,4]benzazabolino[4',3',2':4,5][1,4]benzazabolino Condensed heteroaromatic compounds containing nitrogen and boron, such as [3,2-b]phenazavolin-7,13-diamine (abbreviated as ν-DABNA) and 2-(4-tert-butylphenyl)benz[5,6]indro[3,2,1-jk]benzo[b]carbazole (abbreviated as tBuPBibc), particularly those having a diaza-boranaphtho-anthracene skeleton, can be suitably used because they produce blue emission with a narrow emission spectrum and good color purity.

[0099] In addition to these, there is 9,10,11-tris[3,6-bis(1,1-dimethylethyl)-9H-carbazole-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indoro[3,2,1-de]indoro[3',2',1':8,1][1,4]benzazavolino[2,3,4-kl]phenazavolin (abbreviation: BBCz-G), 9,11-bis[ Compounds having an indole skeleton, such as 3,6-bis(1,1-dimethylethyl)-9H-carbazole-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indoro[3,2,1-de]indoro[3',2',1':8,1][1,4]benzazavolino[2,3,4-kl]phenazavolin (abbreviation: BBCz-Y), can be suitably used.

[0100] Furthermore, thermally activated delayed fluorescence (TADF) materials can be used as the light-emitting material included in the light-emitting layer. As thermally activated delayed fluorescence materials, heterocyclic compounds having π-electron-rich heteroaromatic rings and π-electron-deficient heteroaromatic rings can be used. Specific examples include 2-(biphenyl-4-yl)-4,6-bis(12-phenylindoro[2,3-a]carbazole-11-yl)-1,3,5-triazine (abbreviated as PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviated as PXZ-TRZ), and 3-[4 Examples include -(5-phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviated as PPZ-3TPT), 3-(9,9-dimethyl-9H-acrylidine-10-yl)-9H-xanthene-9-one (abbreviated as ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacrylidine)phenyl]sulfone (abbreviated as DMAC-DPS), and 10-phenyl-10H,10'H-spiro[acrylidine-9,9'-anthracene]-10'-one (abbreviated as ACRSA). These heterocyclic compounds are preferred because they have π-electron-excess heteroaromatic rings and π-electron-deficient heteroaromatic rings, resulting in high electron transport and hole transport properties. Among the skeletons having a π-electron-deficient heteroaromatic ring, the diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton) or the triazine skeleton is preferred because it is stable and reliable. Furthermore, among the skeletons having a π-electron-excess heteroaromatic ring, the acridine skeleton, phenoxazine skeleton, thiophene skeleton, furan skeleton, and pyrrole skeleton are preferred because they are stable and reliable, and it is preferable to have one or more of these skeletons selected from among them. In particular, the indole skeleton, carbazole skeleton, and 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole skeleton are preferred as pyrrole skeletons.Furthermore, materials in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded are particularly preferred because both the donor properties of the π-electron-rich heteroaromatic ring and the acceptor properties of the π-electron-deficient heteroaromatic ring are strong, resulting in a small difference between the singlet excitation energy level and the triplet excitation energy level. In addition, the above-mentioned compounds having a diaza-boranaphtho-anthracene skeleton also function as thermally activated delayed fluorescence materials and are preferred because they can produce blue emission with good color purity.

[0101] Alternatively, a thermally activated delayed fluorescence material may be used instead of a phosphorescent material. A thermally activated delayed fluorescence material has a small difference between its triplet excitation energy level and its singlet excitation energy level, and has the function of converting energy from the triplet excited state to the singlet excited state through reverse intersystem crossing. Therefore, it is possible to upconvert the triplet excited state to the singlet excited state (reverse intersystem crossing) with only a small amount of thermal energy, and emission (fluorescence) from the singlet excited state can be efficiently exhibited. Furthermore, conditions for efficiently obtaining thermally activated delayed fluorescence include the energy difference between the triplet excitation energy level and the singlet excitation energy level being preferably greater than 0 eV and 0.2 eV or less, and more preferably greater than 0 eV and 0.1 eV or less.

[0102] Guest material 119 (phosphorescent compound) can be iridium, rhodium, or platinum-based organometallic complexes or metal complexes, with platinum complexes being preferred among the metal complexes. Platinum complexes having nitrogen-containing heterocyclic carbenes can also be used. Organoiridium complexes, such as iridium-based orthometallic complexes, may also be used. Ligands that can be orthometallic include 4H-triazole ligands, 1H-triazole ligands, imidazole ligands, pyridine ligands, pyrimidine ligands, pyrazine ligands, or isoquinoline ligands.

[0103] Furthermore, it is preferable to select organic compound 118_1, organic compound 118_2, and guest material 119 (phosphorescent compound) such that the guest material 119 has a LUMO level higher than the LUMO level of organic compound 118_1 and a HOMO level lower than the HOMO level of organic compound 118_2. This makes it possible to create a light-emitting device with high luminescence efficiency that can be driven at a low voltage.

[0104] Furthermore, it is preferable to select organic compound 118_1 and guest material 119 (phosphorescent compound) such that the energy difference between the LUMO level of organic compound 118_1 and the HOMO level of guest material 119 (phosphorescent compound) is greater than or equal to the energy calculated from the absorption edge located at the longest wavelength among the absorption edges in the absorption spectrum of guest material 119 (phosphorescent compound). This makes it possible to create a light-emitting device with high luminescence efficiency that can be driven at a low voltage.

[0105] The absorption edge located at the longest wavelength in the absorption spectrum can be determined by measuring the absorption spectrum of the target substance in a thin film state or in a thin film doped with the target substance in a matrix material, and obtaining it from a Tauc plot assuming a direct transition. Alternatively, the absorption spectrum of the solution can be measured, a tangent line can be drawn at the longest wavelength half-value of the peak or shoulder peak observed at the longest wavelength of the absorption spectrum, and the absorption edge can be calculated from the intersection of this tangent line with the horizontal axis (wavelength) or baseline. There are no particular restrictions on the solvent of the solution, but solvents with relatively low polarity, such as toluene and chloroform, are preferred.

[0106] The HOMO and LUMO levels used in this specification can be determined by electrochemical measurements. Typical examples of electrochemical measurements include cyclic voltammetry (CV) and differential pulse voltammetry (DPV).

[0107] In cyclic voltammetry (CV) measurements, the values ​​of the HOMO and LUMO levels (E) are obtained by changing the oxidation peak potential (E) relative to the reference electrode. pa ), and reduction peak potential (E pc Based on this, it can be calculated. In the measurement, the HOMO level is determined from the positive potential scan, and the LUMO level is determined from the negative potential scan. The scan speed in the measurement is set to 0.1 V / s.

[0108] The specific procedure for calculating the HOMO and LUMO levels is described below. The oxidation peak potential (E) is obtained from the cyclic voltammogram of the material. pa ), and reduction peak potential (E pc ) from the standard oxidation-reduction potential (E o )(=(E pa +E pc ) / 2) is calculated, and the potential energy (E) of the reference electrode with respect to the vacuum level is calculated. x By subtracting from ), the values ​​of the HOMO level and LUMO level (E) (=E x -E o ) can be calculated for each of these.

[0109] Note that the above shows the case where a reversible redox wave is obtained, but when an irreversible redox wave is obtained, the HOMO level is calculated using the oxidation peak potential (E pa The reduced peak potential (E) is obtained by subtracting a certain value (0.1 eV) from ). pc ) Assuming the standard oxidation-reduction potential (E o ) is calculated to one decimal place. Also, the reduction peak potential (E) is used to calculate the LUMO level. pc The oxidation peak potential (E) is calculated by adding a constant value (0.1eV) to the value obtained). pa ) Assuming the standard oxidation-reduction potential (E o Calculate the result to one decimal place.

[0110] Examples of substances having emission peaks in the blue or green wavelength region include tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: Ir(mpptz-dmp)3), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: Ir(Mptz)3), and tris[4-(3-biphenyl)-5 -Isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(iPrptz-3b)3), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(iPr5btz)3), organometallic iridium complexes having a 4H-triazole skeleton, such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(iPr5btz)3), tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) [T] Iridium(III) (abbreviation: Ir(Mptz1-mp)3), organometallic iridium complexes having a 1H-triazole skeleton such as tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato) Iridium(III) (abbreviation: Ir(Prptz1-Me)3), fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole] Iridium(III) (abbreviation: Ir(iPrpim)3), tris[3-(2,6 iridium organometallic complexes having an imidazole skeleton, such as -dimethylphenyl)-7-methylimidazo[1,2-f]phenantridinato]iridium(III) (abbreviation: Ir(dmpimpt-Me)3), tris(2-{1-[2,6-bis(1-methylethyl)phenyl]-1H-imidazole-2-yl-κN3}-4-cyanophenyl-κC)iridium(III) (abbreviation: CNImIr), and bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ Iridium(III) tetrakis(1-pyrazolyl) borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’Iridium(III) picolinate (abbreviation: Firpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinate-N,C 2’ Iridium(III) picolinate (abbreviation: Ir(CF3ppy)2(pic)), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Examples include organometallic iridium complexes using phenylpyridine derivatives having electron-withdrawing groups, such as iridium(III) acetylacetonate (abbreviated as Fir(acac)), as ligands, and platinum complexes such as (2-{3-[3-(3,5-di-tert-butylphenyl)benzimidazole-1-yl-2-ylidene-κC2]phenoxy-κC2}-9-(4-tert-butyl-2-pyridinyl-κN)carbazole-2,1-diyl-κC1)platinum(II) (abbreviated as PtON-TBBI). Among the above, organometallic iridium complexes having nitrogen-containing five-membered heterocyclic skeletons such as the 4H-triazole skeleton, 1H-triazole skeleton, and imidazole skeleton are particularly preferred because they have high triplet excitation energy and excellent reliability or luminescence efficiency. Compounds in which some of the hydrogen atoms in these compounds are replaced with deuterium can also be used.

[0111] Furthermore, examples of substances having emission peaks in the green or yellow wavelength region include tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: Ir(mppm)3), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: Ir(tBuppm)3), and (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: Ir(mppm)2(acac)). (Acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: Ir(tBuppm)2(acac)), (Acetylacetonato)bis[4-(2-norbornyl)-6-phenylpyrimidinato]iridium(III) (abbreviation: Ir(nbppm)2(acac)), (Acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (Abbreviation: Ir(mpmppm)2(acac)), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (Abbreviation: Ir(dmppm-dmp)2(acac)), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (Abbreviation: Ir(dppm)2(acac)) are pyrimidine skeletons. Organometallic iridium complexes, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyradinato)iridium(III) (abbreviation: Ir(mppr-Me)2(acac)), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyradinato)iridium(III) (abbreviation: Ir(mppr-iPr)2(acac)), and tris(2-phenylpyridinato-N,C) 2’ Iridium(III) (abbreviation: Ir(ppy)3), bis(2-phenylpyridinate-N,C) 2’Iridium(III) acetylacetonate (abbreviation: Ir(ppy)2(acac)), bis(benzo[h]quinolinate) iridium(III) acetylacetonate (abbreviation: Ir(bzq)2(acac)), tris(benzo[h]quinolinate) iridium(III) (abbreviation: Ir(bzq)3), tris(2-phenylquinolinate-N,C) 2’ Iridium(III) (abbreviation: Ir(pq)3), bis(2-phenylquinolinato-N,C) 2’ ) Iridium(III) acetylacetonate (abbreviation: Ir(pq)2(acac)), [2-d3-methyl-8-(2-pyridinyl-κN)benzoflof[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), { 2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofl[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviation: Ir(5mtpy-d6)2(mbfpypy-iPr-d4)),[2- Organometallic iridium complexes having a pyridine skeleton, such as (methyl-d3)-8-(2-pyridinyl-κN)benzofloxacin[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mdppy)), and tris{2-[5-(methyl-d3)-4-phenyl-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviation: Ir(5m4dppy-d3)3), and bis(2,4-diphenyl-1,3-oxazolato-N,C) 2’ Iridium(III) acetylacetonate (abbreviation: Ir(dpo)2(acac)), bis{2-[4'-(perfluorophenyl)phenyl]pyridinate-N,C 2’Iridium(III) acetylacetonate (abbreviation: Ir(p-PF-ph)2(acac)), bis(2-phenylbenzothiazolat-N,C) 2’ In addition to organometallic iridium complexes such as iridium(III) acetylacetonate (abbreviation: Ir(bt)2(acac)), there are also platinum(II) (abbreviation: Pt(tBudppymmtBubiz-tBubp)), [2-(4-(3,5-di-t Examples include organometallic platinum complexes such as ert-butylphenyl)-6-{3-[4-(5'-tert-butyl[1,1':3',1''-terphenyl]-2'-yl)-2-pyridinyl-κN]phenyl-κC2}-2-pyridinyl-κN)phenolate-κO]platinum(II) (abbreviation: Pt(4tButpppypyp-mmtBup)) and rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: Tb(acac)3(Phen)). Among the above, organometallic iridium complexes having a pyrimidine skeleton are particularly preferred due to their outstanding reliability and luminescence efficiency. Compounds in which some of the hydrogen atoms in these compounds are replaced with deuterium can also be used.

[0112] Furthermore, examples of pyrimidine bones that have emission peaks in the yellow or red wavelength region include (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: Ir(5mdppm)2(dibm)), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipvaloylmethanato)iridium(III) (abbreviation: Ir(5mdppm)2(dpm)), and bis[4,6-di(naphthalene-1-yl)pyrimidinato](dipvaloylmethanato)iridium(III) (abbreviation: Ir(d1npm)2(dpm)). Organometallic iridium complexes with a pyrazine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyradinato)iridium(III) (abbreviation: Ir(tppr)2(acac)), bis(2,3,5-triphenylpyradinato)(dipivaloylmethanato)iridium(III) (abbreviation: Ir(tppr)2(dpm)), and (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: Ir(Fdpq)2(acac)), and tris(1-phenylisoquinolinato-N,C) 2’ Iridium(III) (abbreviation: Ir(piq)3), bis(1-phenylisoquinolinato-N,C) 2’Examples include organometallic iridium complexes having a pyridine skeleton, such as iridium(III) acetylacetonate (abbreviation: Ir(piq)2(acac)), as well as platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP), and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: Eu(DBM)3(Phen)) and tris[1-(2-tenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: Eu(TTA)3(Phen)). Among the above, organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because they exhibit outstanding reliability or luminescence efficiency. Furthermore, organometallic iridium complexes having a pyrazine skeleton can produce a red emission with good chromaticity. Compounds in which some of the hydrogen atoms in these compounds are replaced with deuterium can also be used.

[0113] The light-emitting material included in the light-emitting layer 113 is a material that can convert triplet excitation energy into light emission. Examples of materials capable of converting triplet excitation energy into light emission include phosphorescent compounds and thermally activated delayed fluorescence (TADF) materials. Therefore, wherever "phosphorescent compounds" is mentioned, it may be replaced with "thermally activated delayed fluorescence materials." Thermally activated delayed fluorescence materials are materials with a small energy difference between the triplet excitation energy level and the singlet excitation energy level, and possess the function of converting energy from the triplet excited state to the singlet excited state through reverse intersystem crossing. Therefore, the triplet excited state can be upconverted to the singlet excited state (reverse intersystem crossing) with only a small amount of thermal energy, and light emission (fluorescence) from the singlet excited state can be efficiently exhibited. Furthermore, conditions for efficiently obtaining thermally activated delayed fluorescence include a preferred energy difference between the triplet excitation energy level and the singlet excitation energy level being greater than 0 eV and 0.2 eV or less, and more preferably greater than 0 eV and 0.1 eV or less.

[0114] If the thermally activated delayed fluorescence material is composed of only one type of material, for example, the following materials can be used.

[0115] First, examples include derivatives such as fullerenes, acridine derivatives such as proflavin, and eosin. Also, examples include metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(Etio I)), and octaethylporphyrin-platinum chloride complex (PtCl2(OEP)).

[0116] Furthermore, as thermally activated delayed fluorescence materials composed of a single material, heterocyclic compounds having π-electron-rich heteroaromatic rings and π-electron-deficient heteroaromatic rings can also be used. Specifically, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindoro[2,3-a]carbazole-11-yl)-1,3,5-triazine (abbreviated as PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviated as PXZ-TRZ), 3-[4- Examples include (5-phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviated as PPZ-3TPT), 3-(9,9-dimethyl-9H-acrylidine-10-yl)-9H-xanthene-9-one (abbreviated as ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacrylidine)phenyl]sulfone (abbreviated as DMAC-DPS), and 10-phenyl-10H,10'H-spiro[acrylidine-9,9'-anthracene]-10'-one (abbreviated as ACRSA). These heterocyclic compounds are preferred because they have both π-electron-rich and π-electron-deficient heteroaromatic rings, resulting in high electron transport and hole transport properties. Among the skeletons having a π-electron-deficient heteroaromatic ring, the diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton) or the triazine skeleton is preferred because it is stable and reliable. Furthermore, among the skeletons having a π-electron-excess heteroaromatic ring, the acridine skeleton, phenoxazine skeleton, thiophene skeleton, furan skeleton, and pyrrole skeleton are preferred because they are stable and reliable, and it is preferable to have one or more of these skeletons selected from among them. In particular, the indole skeleton, carbazole skeleton, and 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole skeleton are preferred as pyrrole skeletons.Furthermore, a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferable because both the donor properties of the π-electron-rich heteroaromatic ring and the acceptor properties of the π-electron-deficient heteroaromatic ring are strong, resulting in a small difference between the singlet excitation energy level and the triplet excitation energy level.

[0117] The light-emitting layer 113 can also be composed of two or more layers. For example, when the light-emitting layer 113 is formed by stacking a first light-emitting layer and a second light-emitting layer in order from the hole transport layer side, a material with hole transport properties can be used as the host material for the first light-emitting layer, and a material with electron transport properties can be used as the host material for the second light-emitting layer. Furthermore, the light-emitting materials of the first light-emitting layer and the second light-emitting layer may be the same material or different materials, and they may be materials that exhibit the same color of light emission or materials that exhibit different colors of light emission. By using light-emitting materials that exhibit different colors of light emission for each of the two light-emitting layers, multiple light emission can be obtained simultaneously. In particular, it is preferable to select the light-emitting materials used for each light-emitting layer so that the light emitted by the two light-emitting layers results in white light.

[0118] Furthermore, the light-emitting layer 113 may contain materials other than the host material 118 and the guest material 119.

[0119] The light-emitting layer 113 can be formed by methods such as vapor deposition (including vacuum deposition), inkjet printing, coating, and gravure printing. In addition to the materials described above, it may also contain inorganic compounds such as quantum dots or polymer compounds (oligomers, dendrimers, polymers, etc.).

[0120] ≪Hole Injection Layer≫ The hole injection layers (111, 111a, 111b) are layers that inject holes from the first electrode 101, which is the anode, and the charge generation layers (106, 106a, 106b) into the organic compound layers (103, 103a, 103b), and are layers that contain organic acceptor material and material with high hole injection potential.

[0121] The hole injection layers (111, 111a, 111b) have the function of promoting hole injection by reducing the hole injection barrier from one of the pair of electrodes (first electrode 101 or second electrode 102), and are formed from materials such as transition metal oxides, phthalocyanine derivatives, or aromatic amines. Examples of transition metal oxides include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide. Examples of phthalocyanine derivatives include phthalocyanine or metallic phthalocyanine. Examples of aromatic amines include benzidine derivatives or phenylenediamine derivatives. Polymeric compounds such as polythiophene or polyaniline can also be used, with poly(ethylenedioxythiophene) / polystyrene sulfonic acid, a self-doped polythiophene, being a typical example.

[0122] As the hole injection layer (111, 111a, 111b), a layer having a composite material of a hole-transporting material and a material exhibiting electron-accepting properties to it can also be used. Alternatively, a laminate of a layer containing an electron-accepting material and a layer containing a hole-transporting material may be used. Charge transfer is possible between these materials in a steady state or in the presence of an electric field. Examples of electron-accepting materials include organic acceptors such as quinodimethane derivatives, chloranil derivatives, or hexaazatriphenylene derivatives. Specifically, these are compounds having electron-withdrawing groups (halogen groups or cyano groups) such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), chloranil, and 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviated as HAT-CN). Furthermore, transition metal oxides, such as oxides of Group 4 to Group 8 metals, can be used. Specifically, these include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle.

[0123] As a hole-transporting material, a material with higher hole transport capabilities than electron transport can be used, resulting in a capacity of 1 × 10⁻⁶. -6 cm 2 It is preferable that the material has a hole mobility of / Vs or greater. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, etc., listed as hole transport materials that can be used in the light-emitting layer 113 can be used. Furthermore, the hole transport material may also be a polymer compound.

[0124] ≪Hole transport layer≫ The hole transport layers (112, 112a, 112b) are layers containing a hole-transporting material, and the hole-transporting material exemplified as the material for the hole injection layers (111, 111a, 111b) can be used. Since the hole transport layers (112, 112a, 112b) have the function of transporting holes injected into the hole injection layers (111, 111a, 111b) to the light-emitting layers (113, 113a, 113b), it is preferable that they have the same or close HOMO level as the HOMO level of the hole injection layers (111, 111a, 111b).

[0125] Furthermore, the hole transport material described above is 1 × 10 -6 cm 2 It is preferable that the material has a hole mobility of / Vs or higher. However, other materials may be used as long as they have higher hole transport capabilities than electron transport capabilities. Furthermore, the layer containing the material with high hole transport capabilities may be a single layer, or two or more layers made of the above material may be stacked.

[0126] ≪Electron transport layer≫ The electron transport layers (114, 114a, 114b) have the function of transporting electrons injected from the other electrode of the pair (first electrode 101 or second electrode 102) via the electron injection layers (115, 115a, 115b) to the light-emitting layer 113. As the electron-transporting material, a material with higher electron transport capabilities than hole transport can be used, and 1 × 10⁻⁶ -6 cm 2It is preferable that the material has an electron mobility of 1 × 10⁻¹⁰ or higher. As a compound that readily accepts electrons (a material with electron transport properties), compounds having a π-electron-deficient heteroaromatic ring skeleton such as nitrogen-containing heteroaromatic compounds, or metal complexes can be used. Specifically, examples of electron transport materials that can be used in the light-emitting layer 113 include metal complexes having quinoline ligands, benzoquinoline ligands, oxazole ligands, or thiazole ligands. Other examples include oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and triazine derivatives. Furthermore, the above electron transport material is 1 × 10⁻¹⁰. -6 cm 2 It is preferable that the material has an electron mobility of / Vs or higher. However, any material other than the above may be used as the electron transport layer as long as it has higher electron transport capabilities than hole transport. Furthermore, the electron transport layer (114, 114a, 114b) may be a single layer or two or more layers made of the above material stacked together.

[0127] Furthermore, a layer for controlling the movement of electron carriers may be provided between the electron transport layers (114, 114a, 114b) and the light-emitting layers (113, 113a, 113b). This layer is made by adding a small amount of a substance with high electron-trapping properties to the electron-transporting material described above, and by suppressing the movement of electron carriers, it is possible to adjust the carrier balance. Such a configuration is highly effective in suppressing problems that occur when electrons penetrate the light-emitting layer (for example, a decrease in device lifetime).

[0128] ≪Electron injection layer≫ The electron injection layers (115, 115a, 115b) have the function of promoting electron injection by reducing the electron injection barrier from the second electrode 102, and can be made of, for example, Group 1 metals, Group 2 metals, or their oxides, halides, carbonates, etc. Alternatively, a composite material of the electron-transporting material and an electron-donating material can be used. Examples of electron-donating materials include Group 1 metals, Group 2 metals, or their oxides. Specifically, alkali metals, alkaline earth metals, or compounds thereof, such as lithium fluoride (LiF), sodium fluoride (NaF), cesium fluoride (CsF), calcium fluoride (CaF2), and lithium oxide (Li2O), can be used. Rare earth metal compounds such as erbium fluoride (ErF3) can also be used. Furthermore, an electride may be used in the electron injection layer 115. Examples of such electrides include a substance obtained by adding a high concentration of electrons to a mixed oxide of calcium and aluminum. Furthermore, the electron injection layers (115, 115a, 115b) may be made of materials that can be used in the electron transport layers (114, 114a, 114b).

[0129] Furthermore, a composite material obtained by mixing an organic compound with an electron donor may be used in the electron injection layers (115, 115a, 115b). Such a composite material exhibits excellent electron injection and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material with excellent electron transport properties, and specifically, for example, the substance that constitutes the electron transport layer 114 described above (metal complex, or heteroaromatic compound, etc.) can be used. As the electron donor, a substance that exhibits electron-donating properties to the organic compound is used. Specifically, alkali metals, alkaline earth metals, or rare earth metals are preferred, such as lithium, sodium, cesium, magnesium, calcium, erbium, and ytterbium. Alkali metal oxides or alkaline earth metal oxides are also preferred, such as lithium oxide, calcium oxide, and barium oxide. Lewis bases such as magnesium oxide can also be used. Furthermore, organic compounds such as tetrathiafulvalene (abbreviated as TTF) can also be used.

[0130] The light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer described above can be formed by methods such as vapor deposition (including vacuum deposition), inkjet printing, coating, and gravure printing. In addition to the materials described above, inorganic compounds such as quantum dots or polymer compounds (oligomers, dendrimers, polymers, etc.) may also be used for the light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer.

[0131] Furthermore, the quantum dots may include colloidal quantum dots, alloy quantum dots, core-shell quantum dots, core quantum dots, etc. Quantum dots containing elemental groups from groups 2 and 16, 13 and 15, 13 and 17, 11 and 17, or 14 and 15 may also be used. Alternatively, quantum dots containing elements such as cadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), phosphorus (P), indium (In), tellurium (Te), lead (Pb), gallium (Ga), arsenic (As), and aluminum (Al) may be used.

[0132] ≪A pair of electrodes≫ The first electrode 101 and the second electrode 102 function as the anode or cathode of the light-emitting device. The first electrode 101 and the second electrode 102 can be formed using metals, alloys, conductive compounds, mixtures thereof, or laminates.

[0133] Preferably, one of the first electrode 101 or the second electrode 102 is formed of a conductive material having the function of reflecting light. Examples of such conductive materials include aluminum (Al) or alloys containing Al. Examples of alloys containing Al include alloys containing Al and L (where L represents one or more of titanium (Ti), neodymium (Nd), nickel (Ni), and lanthanum (La)), such as alloys containing Al and Ti, or Al, Ni, and La. Aluminum has low resistance and high light reflectivity. In addition, since aluminum is abundant in the Earth's crust and inexpensive, using aluminum can reduce the cost of manufacturing light-emitting devices. In addition, alloys containing silver (Ag), or Ag and N (where N represents one or more of yttrium (Y), Nd, magnesium (Mg), ytterbium (Yb), Al, Ti, gallium (Ga), zinc (Zn), indium (In), tungsten (W), manganese (Mn), tin (Sn), iron (Fe), Ni, copper (Cu), palladium (Pd), iridium (Ir), or gold (Au) may be used. Examples of silver-containing alloys include alloys containing silver, palladium, and copper; alloys containing silver and copper; alloys containing silver and magnesium; alloys containing silver and nickel; alloys containing silver and gold; and alloys containing silver and ytterbium. Other transition metals such as tungsten, chromium (Cr), molybdenum (Mo), copper, and titanium can also be used.

[0134] Furthermore, the light emitted from the light-emitting layer is extracted through one or both of the first electrode 101 and the second electrode 102. Therefore, it is preferable that at least one of the first electrode 101 and the second electrode 102 be made of a conductive material that has the function of transmitting light. The conductive material has a visible light transmittance of 40% to 100%, preferably 60% to 100%, and a resistivity of 1 × 10⁻¹⁶. -2 Examples include conductive materials with a conductivity of Ω·cm or less.

[0135] Furthermore, the first electrode 101 and the second electrode 102 may be formed from a conductive material having both a light-transmitting function and a light-reflecting function. The conductive material has a reflectance of 20% to 80%, preferably 40% to 70%, for visible light (for example, light of a predetermined wavelength in the range of 400 nm to less than 750 nm), and its resistivity is 1 × 10⁻⁶. -2 Examples of conductive materials include those with a conductivity of Ω·cm or less. For example, they can be formed using one or more types of conductive metals, alloys, or conductive compounds. Specifically, metal oxides such as indium tin oxide (ITO), silicon oxide-containing indium tin oxide (ITSO), indium zinc oxide, titanium-containing indium tin oxide, indium titanium oxide, tungsten oxide, and indium oxide containing zinc oxide can be used. In addition, thin metal films that transmit light (preferably with a thickness of 1 nm to 30 nm) can be used. As metals, for example, Ag, or alloys such as Ag and Al, Ag and Mg, Ag and Au, Ag and Yb can be used.

[0136] In this specification, the material having the function of transmitting light is a material that has the function of transmitting visible light and is conductive, and in addition to oxide conductors represented by ITO as described above, it also includes oxide semiconductors or organic conductors containing organic matter. Examples of organic conductors containing organic matter include composite materials obtained by mixing an organic compound with an electron donor, and composite materials obtained by mixing an organic compound with an electron acceptor. Inorganic carbon-based materials such as graphene may also be used. The resistivity of the material is preferably 1 × 10⁻⁶. 5 Ω·cm or less, more preferably 1 × 10⁻⁶ 4 It is less than or equal to Ω·cm.

[0137] Alternatively, one or both of the first electrode 101 and the second electrode 102 may be formed by stacking multiple of the above-mentioned materials.

[0138] Furthermore, to improve light extraction efficiency, a configuration can be used in which a material with a higher refractive index than the electrode is formed in contact with an electrode that has the function of transmitting light. Such a material can be a material that has the function of transmitting visible light and can be conductive or non-conductive. For example, in addition to the oxide conductors mentioned above, oxide semiconductors and organic materials can be used. Examples of organic materials include the materials exemplified in the light-emitting layer, hole injection layer, hole transport layer, electron transport layer, or electron injection layer. Carbon materials or thin metal films that transmit light to a certain extent can also be used, and a configuration can be made in which multiple layers with a film thickness of several nanometers to tens of nanometers are stacked.

[0139] When the first electrode 101 or the second electrode 102 functions as a cathode, it is preferable to use a material with a small work function (3.8 eV or less). For example, elements belonging to Group 1 or Group 2 of the periodic table (alkali metals such as lithium, sodium, and cesium; alkaline earth metals such as calcium and strontium; magnesium, etc.), alloys containing these elements (e.g., Ag and Mg, Al and Li), rare earth metals such as europium (Eu) and Yb, alloys containing these rare earth metals, alloys containing aluminum and silver, etc. can be used.

[0140] Furthermore, when using the first electrode 101 or the second electrode 102 as an anode, it is preferable to use a material with a large work function (4.0 eV or more).

[0141] Furthermore, the first electrode 101 and the second electrode 102 may be laminates of a conductive material having the function of reflecting light and a conductive material having the function of transmitting light. In that case, the first electrode 101 and the second electrode 102 are preferable because they can have a function to adjust the optical distance between them so that they can resonate with light of a desired wavelength from each light-emitting layer and intensify that light.

[0142] The first electrode 101 and the second electrode 102 can be formed using methods such as sputtering, vapor deposition, printing, coating, MBE (Molecular Beam Epitaxy), CVD, pulsed laser deposition, ALD (Atomic Layer Deposition), etc., as appropriate.

[0143] ≪Charge Generation Layer≫ The charge generation layer 106 has the function of injecting electrons into the organic compound layer 103a and holes into the organic compound layer 103b when a voltage is applied between the first electrode (anode) 101 and the second electrode (cathode) 102. The charge generation layer 106 may be a configuration in which an electron acceptor is added to a hole transport material (also called a P-type layer), or a configuration in which an electron donor is added to an electron transport material (also called an electron injection buffer layer). Furthermore, both of these configurations may be laminated. In addition, an electron relay layer may be provided between the P-type layer and the electron injection buffer layer. By forming the charge generation layer 106 using a P-type layer, an electron injection buffer layer, or an electron relay layer, or a laminate of these, the increase in the driving voltage when the organic compound layers are laminated can be suppressed.

[0144] In the charge generation layer 106, when an electron acceptor is added to a hole-transporting material which is an organic compound (P-type layer), the material shown in this embodiment can be used as the hole-transporting material. Examples of electron acceptors include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), chloranil, etc. Other examples include oxides of metals belonging to groups 4 to 8 of the periodic table. Specifically, examples include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. The acceptor material described above may also be used. Furthermore, the P-type layer may be used as a mixed film by mixing the materials, or as single films containing each material stacked together.

[0145] Furthermore, in the charge generation layer 106, if an electron donor is added to the electron transport material (electron injection buffer layer), the materials shown in this embodiment can be used as the electron transport material. As the electron donor, alkali metals, alkaline earth metals, rare earth metals, or metals belonging to groups 2 and 13 of the periodic table, as well as their oxides and carbonates, can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li2O), cesium carbonate, etc., are preferred. Organic compounds such as tetrathianaphthalene may also be used as electron donors.

[0146] In the charge generation layer 106, when an electron relay layer is provided between the P-type layer and the electron injection buffer layer, the electron relay layer contains at least an electron-transporting material and has the function of preventing interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. Preferably, the LUMO level of the electron-transporting material included in the electron relay layer is between the LUMO level of the acceptor material in the P-type layer and the LUMO level of the electron-transporting material included in the electron transport layer in contact with the charge generation layer 106. The specific energy level of the LUMO level of the electron-transporting material used in the electron relay layer is -5.0 eV or higher, preferably -5.0 eV or higher and -3.0 eV or lower. It is preferable to use a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand as the electron-transporting material used in the electron relay layer.

[0147] Although Figure 2(D) shows a configuration in which two organic compound layers 103 are stacked, a stacked structure of three or more organic compound layers may be used by providing a charge generation layer between different organic compound layers.

[0148] ≪Capping layer≫ Although not shown in Figures 2(A) to 2(E), a cap layer may be provided on the second electrode 102 of the light-emitting device. For example, a material with a high refractive index can be used for the cap layer. By providing a cap layer on the second electrode 102, the extraction efficiency of the light emitted from the second electrode 102 can be improved.

[0149] Specific examples of materials that can be used for the cap layer include 5,5'-diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviated as BisBTc) and 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviated as DBT3P-II). In addition, the organic compounds described in Embodiment 1 can be used.

[0150] Circuit board Furthermore, a light-emitting device according to one aspect of the present invention can be fabricated on a substrate made of glass, plastic, or the like. The order in which the devices are fabricated on the substrate can be either by stacking them sequentially from the first electrode 101 side, or by stacking them sequentially from the second electrode 102 side.

[0151] Furthermore, as a substrate on which a light-emitting device according to one aspect of the present invention can be formed, for example, glass, quartz, or plastic can be used. A flexible substrate may also be used. A flexible substrate is a substrate that can be bent (flexible), and examples include plastic substrates made of polycarbonate or polyarylate. Films, inorganic vapor-deposited films, etc., can also be used. In addition, other materials can be used as long as they function as a support in the manufacturing process of the light-emitting device and optical element. Alternatively, a material that has the function of protecting the light-emitting device and optical element can be used.

[0152] For example, in this specification, light-emitting devices can be formed using various substrates. The type of substrate is not particularly limited. Examples of substrates include semiconductor substrates (e.g., single crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, plastic substrates, metal substrates, stainless steel substrates, substrates with stainless steel foil, tungsten substrates, substrates with tungsten foil, flexible substrates, laminated films, cellulose nanofibers (CNF) containing fibrous materials, paper, or base films. Examples of glass substrates include barium borosilicate glass, aluminobosilicate glass, or soda-lime glass. Examples of flexible substrates, laminated films, and base films include the following: For example, plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE). Alternatively, as an example, acrylic resin. Alternatively, as an example, polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride. Alternatively, examples include resins such as polyamide resin, polyimide resin, aramid resin, or epoxy resin, inorganic vapor-deposited films, or papers.

[0153] Alternatively, a flexible substrate may be used as the substrate, and the light-emitting device may be formed directly on the flexible substrate. Or, a release layer may be provided between the substrate and the light-emitting device. The release layer can be used to separate the light-emitting device from the substrate after it has been partially or completely completed on it, and to transfer it to another substrate. In this case, the light-emitting device can be transferred to a substrate with poor heat resistance or a flexible substrate. The release layer can be configured in various ways, such as a laminated inorganic film structure of a tungsten film and a silicon oxide film, or a resin film such as polyimide formed on the substrate.

[0154] In other words, a light-emitting device may be formed using one substrate, then the light-emitting device may be transferred to another substrate, and the light-emitting device may be placed on the other substrate. Examples of substrates to which the light-emitting device is transferred include, in addition to the substrates mentioned above, cellophane substrates, stone substrates, wood substrates, cloth substrates (including natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester), or recycled fibers (acetate, cupro, rayon, recycled polyester), etc.), leather substrates, or rubber substrates. By using these substrates, it is possible to create light-emitting devices that are less prone to breakage, have high heat resistance, are lightweight, or are thin.

[0155] Alternatively, a field-effect transistor (FET), for example, may be formed on the aforementioned substrate, and a light-emitting device may be fabricated on an electrode electrically connected to the FET. This makes it possible to fabricate an active-matrix type display device in which the driving of the light-emitting device is controlled by the FET.

[0156] In this embodiment, one aspect of the present invention has been described. Alternatively, in other embodiments, one aspect of the present invention may be described. However, the aspects of the present invention are not limited to these. That is, since various aspects of the invention are described in this embodiment and other embodiments, the aspects of the present invention are not limited to a specific aspect. For example, an example of application to a light-emitting device was shown as one aspect of the present invention, but the aspects of the present invention are not limited to this. For example, depending on the circumstances or situation, one aspect of the present invention may not be applied to a light-emitting device. Alternatively, for example, in one aspect of the present invention, an example was shown in which a first organic compound, a second organic compound, and a guest material having the function of converting triplet excitation energy into light emission are provided, and the LUMO level of the first organic compound is lower than the LUMO level of the second organic compound, and the HOMO level of the first organic compound is lower than the HOMO level of the second organic compound, but the aspects of the present invention are not limited to this. Depending on the circumstances or situation, in one aspect of the present invention, for example, the LUMO level of the first organic compound may not be lower than the LUMO level of the second organic compound. Alternatively, the HOMO level of the first organic compound does not have to be lower than the HOMO level of the second organic compound. Or, for example, one aspect of the present invention shows an example in which the first organic compound and the second organic compound form an excited complex, but the aspects of the present invention are not limited thereto. In some cases, or depending on the circumstances, one aspect of the present invention shows an example in which the LUMO level of the guest material is higher than the LUMO level of the first organic compound, and the HOMO level of the guest material is lower than the HOMO level of the second organic compound, but the aspects of the present invention are not limited thereto. In some cases, or depending on the circumstances, one aspect of the present invention shows an example in which the LUMO level of the guest material is higher than the LUMO level of the first organic compound, and the HOMO level of the guest material is lower than the HOMO level of the second organic compound.

[0157] The configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments.

[0158] (Embodiment 3) As illustrated in Figures 3(A) and 3(B), the light-emitting devices described in the previous embodiment are formed in multiples on the insulating layer 175 to constitute a light-emitting apparatus. This embodiment will describe in detail one aspect of the light-emitting apparatus of the present invention.

[0159] The light-emitting device 1000 has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixels 178 include sub-pixels 110R, sub-pixels 110G, and sub-pixels 110B.

[0160] In this specification, for example, matters common to sub-pixels 110R, 110G, and 110B may be described as sub-pixel 110. Furthermore, for components distinguished by letters, matters common to the relevant structure may be described using symbols without letters.

[0161] Sub-pixel 110R emits red light, sub-pixel 110G emits green light, and sub-pixel 110B emits blue light. This allows an image to be displayed on the pixel section 177. In this embodiment, three sub-pixels of red (R), green (G), and blue (B) are used as an example, but the present invention is not limited to this configuration. In other words, combinations of sub-pixels of other colors may be used. For example, the number of sub-pixels is not limited to three, but may be four or more. Examples of four sub-pixels include four sub-pixels of R, G, B, and white (W), four sub-pixels of R, G, B, and yellow (Y), and four sub-pixels of R, G, B, and infrared (IR).

[0162] In this specification and other documents, the row direction is sometimes referred to as the X direction, and the column direction as the Y direction. The X and Y directions intersect, for example, perpendicularly.

[0163] Figure 3(A) shows an example where subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction. Alternatively, subpixels of different colors may be arranged side by side in the Y direction, and subpixels of the same color may be arranged side by side in the X direction.

[0164] A connecting portion 140 and a region 141 may be provided on the outside of the pixel portion 177. For example, the region 141 may be provided between the pixel portion 177 and the connecting portion 140. An organic compound layer 103 is provided in the region 141. A conductive layer 151C is provided in the connecting portion 140.

[0165] Figure 3(A) shows an example where region 141 and connection portion 140 are located to the right of the pixel portion 177, but the positions of region 141 and connection portion 140 are not particularly limited. Also, region 141 and connection portion 140 may be singular or multiple.

[0166] Figure 3(B) is an example of a cross-sectional view between the dashed line A1-A2 in Figure 3(A). As shown in Figure 3(B), the light-emitting device 1000 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 may be provided on a substrate (not shown). The insulating layer 175, insulating layer 174, and insulating layer 173 are provided with openings that reach the conductive layer 172, and plugs 176 are provided to fill these openings.

[0167] In the pixel section 177, a light-emitting device 130 is provided on an insulating layer 175 and a plug 176. A protective layer 131 is provided to cover the light-emitting device 130. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. An inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 may also be provided between adjacent light-emitting devices 130.

[0168] In Figure 3(B), multiple cross-sections of the inorganic insulating layer 125 and the insulating layer 127 are shown, but when the light-emitting device 1000 is viewed from above, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are connected as one unit. In other words, the inorganic insulating layer 125 and the insulating layer 127 are insulating layers having an opening on the first electrode.

[0169] Figure 3(B) shows light-emitting devices 130R, 130G, and 130B as light-emitting devices 130. Light-emitting devices 130R, 130G, and 130B emit light of different colors. For example, light-emitting device 130R can emit red light, light-emitting device 130G can emit green light, and light-emitting device 130B can emit blue light. In addition, light-emitting devices 130R, 130G, or 130B may emit other visible light or infrared light.

[0170] The organic compound layer 103 may have at least an emissive layer and other functional layers (such as a hole injection layer, hole transport layer, hole blocking layer, electron blocking layer, electron transport layer, and electron injection layer). Alternatively, the organic compound layer 103 and the common layer 104 may be combined to form the functional layers (such as a hole injection layer, hole transport layer, hole blocking layer, emissive layer, electron blocking layer, electron transport layer, and electron injection layer) that make up a light-emitting device.

[0171] One embodiment of the present invention can be a top-emission type, for example, which emits light in the direction opposite to the substrate on which the light-emitting device is formed. Alternatively, one embodiment of the present invention may be a bottom-emission type.

[0172] The light-emitting device 130R has the configuration shown in Embodiment 1 or Embodiment 2. It includes a first electrode (pixel electrode) consisting of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer 104.

[0173] The common layer 104 is not necessarily required. Providing the common layer 104 can reduce damage to the organic compound layer 103R caused by subsequent processes. Also, if the common layer 104 is provided, it may function as an electron injection layer. When the common layer 104 functions as an electron injection layer, the laminated structure of the organic compound layer 103R and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 1.

[0174] Here, the light-emitting device 130 has the configuration shown in Embodiment 1 or Embodiment 2. It includes a first electrode (pixel electrode) consisting of a conductive layer 151 and a conductive layer 152, an organic compound layer 103 on the first electrode, a common layer 104 on the organic compound layer 103, and a second electrode (common electrode) 102 on the common layer 104.

[0175] Of the pixel electrodes and common electrodes in a light-emitting device, one functions as the anode and the other as the cathode. In the following explanation, unless otherwise specified, it is assumed that the pixel electrodes function as the anode and the common electrodes function as the cathode.

[0176] The organic compound layers 103R, 103G, and 103B are independently arranged in island-like formations for each light-emitting device or for each light-emitting color. By providing the organic compound layer 103 in island-like formations for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in high-definition light-emitting devices. This prevents crosstalk and enables the realization of a light-emitting device with extremely high contrast. In particular, it enables the realization of a light-emitting device with high current efficiency at low brightness levels.

[0177] The organic compound layer 103 may be provided so as to cover the top and side surfaces of the first electrode (pixel electrode) of the light-emitting device 130. This makes it easier to increase the aperture ratio of the light-emitting device 1000 compared to a configuration where the edge of the organic compound layer 103 is located inside the edge of the pixel electrode. In addition, by covering the side surfaces of the pixel electrode of the light-emitting device 130 with the organic compound layer 103, contact between the pixel electrode and the second electrode 102 can be suppressed, thereby suppressing short circuits in the light-emitting device 130. Furthermore, the distance between the light-emitting region of the organic compound layer 103 (i.e., the region overlapping with the pixel electrode) and the edge of the organic compound layer 103 can be increased. Moreover, since the edge of the organic compound layer 103 may be damaged by processing, the reliability of the light-emitting device 130 can be improved by using a region away from the edge of the organic compound layer 103 as the light-emitting region.

[0178] Furthermore, in a light-emitting device according to one aspect of the present invention, the first electrode (pixel electrode) of the light-emitting device may be in a stacked configuration. For example, in the example shown in Figure 3(B), the first electrode of the light-emitting device 130 is in a stacked configuration of a conductive layer 151 and a conductive layer 152.

[0179] For example, if the light-emitting device 1000 is a top-emission type, it is preferable that the pixel electrodes of the light-emitting device 130 have a conductive layer 151 with high reflectivity to visible light and a conductive layer 152 that is transparent to visible light and has a large work function. The higher the reflectivity of the pixel electrodes to visible light, the higher the efficiency of extracting light emitted by the organic compound layer 103. Also, if the pixel electrodes function as anodes, the larger the work function of the pixel electrodes, the easier it is to inject holes into the organic compound layer 103. Therefore, by making the pixel electrodes of the light-emitting device 130 a laminated structure of a conductive layer 151 with high reflectivity to visible light and a conductive layer 152 with a large work function, the light-emitting device 130 can be made into a light-emitting device with high light extraction efficiency and a low driving voltage.

[0180] Specifically, the reflectance of the conductive layer 151 with respect to visible light is preferably 40% to 100%, and more preferably 70% to 100%. Furthermore, if the conductive layer 152 is an electrode that transmits visible light, it is preferable that its transmittance to visible light be 40% or more.

[0181] Furthermore, when removing a film deposited after the formation of a pixel electrode with a layered structure using methods such as wet etching, the etching solution may become impregnated into the structure. If the impregnated solution comes into contact with the pixel electrode, galvanic corrosion may occur between the multiple layers constituting the pixel electrode, potentially altering the pixel electrode.

[0182] Therefore, it is preferable to form the conductive layer 152 so as to cover the upper and side surfaces of the conductive layer 151. By covering the conductive layer 151 with the conductive layer 152, the impregnated chemical solution does not come into contact with the conductive layer 151, and the occurrence of galvanic corrosion on the pixel electrode can be suppressed. Consequently, the light-emitting device 1000 can be manufactured using a method with a high yield, making it a low-cost light-emitting device. Furthermore, since the occurrence of defects in the light-emitting device 1000 can be suppressed, the light-emitting device 1000 can be a highly reliable light-emitting device.

[0183] For example, a metallic material can be used as the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used.

[0184] As the conductive layer 152, an oxide having one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use a conductive oxide containing one or more of the following: indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, so it can be suitably used as the conductive layer 152.

[0185] Furthermore, the conductive layer 151 and the conductive layer 152 may be a laminated structure of multiple layers having different materials. In this case, the conductive layer 151 may have a layer made of a material that can be used for the conductive layer 152, such as a conductive oxide, and the conductive layer 152 may have a layer made of a material that can be used for the conductive layer 151, such as a metallic material. For example, if the conductive layer 151 has a laminated structure of two or more layers, the layer in contact with the conductive layer 152 may be a layer containing the same material as the layer of the conductive layer 152 that is in contact with the conductive layer 151.

[0186] Furthermore, it is preferable that the end of the conductive layer 151 has a tapered shape. Specifically, it is preferable that the end of the conductive layer 151 has a tapered shape with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side surface of the conductive layer 151 also has a tapered shape. By making the end of the conductive layer 152 tapered, the coverage of the organic compound layer 103 provided along the side surface of the conductive layer 152 can be improved.

[0187] Furthermore, if the conductive layer 151 or the conductive layer 152 has a laminated structure, it is preferable that at least one side surface has a tapered shape. Also, in the laminated structure constituting each conductive layer, each layer may have a different tapered shape.

[0188] Figure 4(A) shows a case where the conductive layer 151 has a laminated structure of multiple layers containing different materials. As shown in Figure 4(A), the conductive layer 151 has a configuration comprising conductive layer 151_1, conductive layer 151_2 on conductive layer 151_1, and conductive layer 151_3 on conductive layer 151_2. In other words, the conductive layer 151 shown in Figure 4(A) has a three-layer laminated structure. In this case, where the conductive layer 151 has a laminated structure of multiple layers, the reflectance for visible light of at least one of the layers constituting the conductive layer 151 is made higher than the reflectance for visible light of the conductive layer 152.

[0189] In the example shown in Figure 4(A), the conductive layer 151_2 is sandwiched between conductive layers 151_1 and 151_3. It is preferable to use materials for conductive layers 151_1 and 151_3 that are less susceptible to deterioration than conductive layer 151_2. For example, conductive layer 151_1 can be made of a material that is less prone to migration due to contact with the insulating layer 175 than conductive layer 151_2. Furthermore, conductive layer 151_3 can be made of a material that is less susceptible to oxidation than conductive layer 151_2, and whose oxide electrical resistivity is lower than that of the oxide material used for conductive layer 151_2.

[0190] As described above, by sandwiching the conductive layer 151_2 between conductive layers 151_1 and 151_3, the range of material selection for conductive layer 151_2 can be broadened. This allows, for example, conductive layer 151_2 to have a higher reflectivity to visible light than at least one of conductive layers 151_1 and 151_3. For example, aluminum can be used as conductive layer 151_2. Note that an alloy containing aluminum may also be used for conductive layer 151_2. Furthermore, titanium can be used as conductive layer 151_1, as it has a lower reflectivity to visible light compared to aluminum, but is less prone to migration than aluminum even when in contact with insulating layer 175. In addition, titanium can be used as conductive layer 151_3, as it has a lower reflectivity to visible light compared to aluminum, but is less prone to oxidation than aluminum, and the electrical resistivity of its oxide is lower than that of aluminum oxide.

[0191] Furthermore, silver or a silver-containing alloy may be used as the conductive layer 151_3. Silver has the property of having a higher reflectivity to visible light than titanium. In addition, silver is less prone to oxidation than aluminum, and the electrical resistivity of silver oxide is lower than that of aluminum oxide. As a result, by using silver or a silver-containing alloy as the conductive layer 151_3, it is possible to suitably increase the reflectivity of the conductive layer 151 to visible light while suppressing the increase in the electrical resistance of the pixel electrode due to oxidation of the conductive layer 151_2. Here, as the silver-containing alloy, for example, an alloy of silver, palladium, and copper (also written as Ag-Pd-Cu or APC) can be applied. Note that if silver or a silver-containing alloy is used as the conductive layer 151_3 and aluminum is used as the conductive layer 151_2, the reflectivity of the conductive layer 151_3 to visible light can be made higher than the reflectivity of the conductive layer 151_2 to visible light. Here, silver or a silver-containing alloy may be used as the conductive layer 151_2. Alternatively, silver or a silver-containing alloy may be used for the conductive layer 151_1.

[0192] On the other hand, films using titanium have superior processability through etching compared to films using silver. Therefore, by using titanium as the conductive layer 151_3, the conductive layer 151_3 can be easily formed. Films using aluminum also have superior processability through etching compared to films using silver.

[0193] As described above, by making the conductive layer 151 a laminated structure of multiple layers, the characteristics of the light-emitting device can be improved. For example, the light-emitting device 1000 can be made into a light-emitting device with high light extraction efficiency and high reliability.

[0194] In this case, if a microcavity structure is applied to the light-emitting device 130, using silver or a silver-containing alloy, which is a material with high reflectivity for visible light, as the conductive layer 151_3 can suitably increase the light extraction efficiency of the light-emitting device 1000.

[0195] Furthermore, depending on the material selection or processing method of the conductive layer 151, as shown in Figure 4(A), the side surface of conductive layer 151_2 may be located inward from the side surfaces of conductive layer 151_1 and conductive layer 151_3, forming a protrusion. This may reduce the coverage of conductive layer 152 over conductive layer 151, potentially causing stepped breaks in conductive layer 152.

[0196] Therefore, it is preferable to provide an insulating layer 156 as shown in Figure 4(A). Figure 4(A) shows an example in which the insulating layer 156 is provided on the conductive layer 151_1 such that it has a region that overlaps with the side surface of the conductive layer 151_2. This suppresses the occurrence of stepped breakage or thinning of the conductive layer 152 caused by protrusions, and thus suppresses connection failures or increases in drive voltage.

[0197] In Figure 4(A), a structure is shown in which the entire side surface of the conductive layer 151_2 is covered by the insulating layer 156. However, a portion of the side surface of the conductive layer 151_2 may not be covered by the insulating layer 156. Similarly, in the pixel electrodes with the configurations shown later, a portion of the side surface of the conductive layer 151_2 may not be covered by the insulating layer 156.

[0198] Furthermore, as shown in Figure 4(A), it is preferable that the insulating layer 156 has a curved surface. This suppresses the occurrence of step breaks in the conductive layer 152 covering the insulating layer 156 compared to, for example, when the side surface of the insulating layer 156 is vertical (parallel to the Z direction). Even if the insulating layer 156 has a tapered shape on its side surface, specifically a tapered shape with a taper angle of less than 90°, it still suppresses the occurrence of step breaks in the conductive layer 152 covering the insulating layer 156 compared to, for example, when the side surface of the insulating layer 156 is vertical. As a result, the light-emitting device 1000 can be manufactured using a method with a high yield. Furthermore, the occurrence of defects is suppressed, and the light-emitting device 1000 can be made into a highly reliable light-emitting device.

[0199] However, the present invention is not limited to this embodiment. For example, Figures 4(B) to 4(D) show other configurations of the first electrode 101.

[0200] Figure 4(B) shows a configuration in which, in the first electrode 101 of Figure 4(A), the insulating layer 156 covers not only the side surface of the conductive layer 151_2, but also the side surfaces of the conductive layer 151_1, conductive layer 151_2, and conductive layer 151_3.

[0201] Figure 4(C) shows a configuration in which the first electrode 101 of Figure 4(A) does not have an insulating layer 156.

[0202] Figure 4(D) shows a configuration in which the first electrode 101 of Figure 4(A) does not have a laminated structure, but the conductive layer 151 does have a laminated structure.

[0203] The conductive layer 152_1 is a layer that has higher adhesion to the conductive layer 152_2, for example, to the insulating layer 175. As the conductive layer 152_1, an oxide having one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use a conductive oxide containing one or more of the following: indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. As a result, peeling of the conductive layer 152_2 can be suppressed. Furthermore, the conductive layer 152_2 can be configured not to come into contact with the insulating layer 175.

[0204] The conductive layer 152_2 is a layer whose reflectance to visible light is higher than that of conductive layers 151, 152_1, and 152_3. The reflectance to visible light of conductive layer 152_2 can be, for example, 70% to 100%, preferably 80% to 100%, and more preferably 90% to 100%. In addition, for conductive layer 152_2, for example, silver or an alloy containing silver can be used. An example of an alloy containing silver is an alloy of silver, palladium, and copper (APC). As a result, the light-emitting device 1000 can be made into a light-emitting device with high light extraction efficiency. Note that a metal other than silver may be used as the conductive layer 152_2.

[0205] When conductive layers 151 and 152 function as anodes, it is preferable that conductive layer 152_3 be a layer with a large work function. For example, conductive layer 152_3 should have a larger work function than conductive layer 152_2. For conductive layer 152_3, for example, a material similar to the material that can be used for conductive layer 152_1 can be used. For example, a configuration in which the same type of material is used for conductive layer 152_1 and conductive layer 152_3 can be used.

[0206] Furthermore, when conductive layers 151 and 152 function as cathodes, it is preferable that conductive layer 152_3 be a layer with a small work function. For example, conductive layer 152_3 is a layer with a smaller work function than conductive layer 152_2.

[0207] Furthermore, it is preferable that the conductive layer 152_3 is a layer with high transmittance to visible light. For example, it is preferable that the transmittance of the conductive layer 152_3 to visible light is higher than the transmittance of the conductive layer 151 and the conductive layer 152_2 to visible light. For example, the transmittance of the conductive layer 152_3 to visible light can be 40% or more and 100% or less, preferably 60% or more and 100% or less. As a result, the amount of light absorbed by the conductive layer 152_3 from the light emitted by the organic compound layer 103 can be reduced. Also, as mentioned above, the conductive layer 152_2 below the conductive layer 152_3 can be a layer with high reflectance to visible light. Therefore, the light-emitting device 1000 can be a light-emitting device with high light extraction efficiency.

[0208] Next, an example of a method for manufacturing a light-emitting device 1000 having the configuration shown in Figure 3 will be explained using Figures 5 to 11.

[0209] [Example of manufacturing method] Thin films (insulating films, semiconductor films, and conductive films, etc.) that constitute light-emitting devices can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), or ALD. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic vapor deposition (MOCVD).

[0210] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the light-emitting device can be formed by wet film deposition methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0211] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used to fabricate light-emitting devices. Examples of vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, as well as chemical vapor deposition (CVD). Functional layers (hole injection layers, hole transport layers, hole blocking layers, light-emitting layers, electron blocking layers, electron transport layers, and electron injection layers, etc.) contained in the organic compound layer can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), and printing methods (inkjet, screen printing, offset printing, flexographic printing, gravure, or microcontact printing, etc.).

[0212] Furthermore, when processing the thin film that constitutes the light-emitting device, it can be processed using, for example, photolithography. Alternatively, the thin film may be processed by nanoimprint lithography, sandblasting, lift-off lithography, etc. In addition, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0213] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film, for example by etching, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0214] For etching thin films, dry etching, wet etching, or sandblasting methods can be used.

[0215] First, as shown in Figure 5(A), an insulating layer 171 is formed on a substrate (not shown). Next, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layers 172 and 179. Next, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0216] As the substrate, a substrate with sufficient heat resistance to withstand subsequent heat treatment can be used. When using an insulating substrate, glass substrates, quartz substrates, sapphire substrates, ceramic substrates, or organic resin substrates can be used. In addition, semiconductor substrates such as single-crystal semiconductor substrates, polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon-germanium, and SOI substrates made from silicon or silicon carbide can be used.

[0217] Next, as shown in Figure 5(A), openings reaching the conductive layer 172 are formed in the insulating layer 175, insulating layer 174, and insulating layer 173. Subsequently, a plug 176 is formed to fill these openings.

[0218] Next, as shown in Figure 5(A), a conductive film 151f, which will later become conductive layers 151R, 151G, 151B, and 151C, is formed on the plug 176 and the insulating layer 175. For example, sputtering or vacuum deposition can be used to form the conductive film 151f. In addition, a metallic material can be used as the conductive film 151f.

[0219] Next, as shown in Figure 5(A), a resist mask 191 is formed on the conductive film 151f, for example. The resist mask 191 can be formed by applying a photosensitive material (photoresist), exposing it to light, and developing it.

[0220] Next, as shown in Figure 5(B), the conductive film 151f in areas that do not overlap with the resist mask 191 is removed, for example, by an etching method, specifically a dry etching method. If the conductive film 151f includes a layer made of a conductive oxide such as indium tin oxide, this layer may be removed by a wet etching method. This forms the conductive layer 151. If, for example, a portion of the conductive film 151f is removed by dry etching, a recess (also called a counterbore) may be formed in the area of ​​the insulating layer 175 that does not overlap with the conductive layer 151.

[0221] Next, as shown in Figure 5(C), the resist mask 191 is removed. The resist mask 191 can be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 191 may be removed by wet etching.

[0222] Next, as shown in Figure 5(D), insulating film 156f, which will later become insulating layers 156R, 156G, 156B, and 156C, is formed on the conductive layer 151R, conductive layer 151G, conductive layer 151B, conductive layer 151C, and insulating layer 175. For forming the insulating film 156f, for example, CVD, ALD, sputtering, or vacuum deposition can be used.

[0223] Inorganic materials can be used for the insulating film 156f. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, or nitride-oxide insulating films can be used for the insulating film 156f. For example, silicon-containing oxide insulating films, nitride insulating films, oxidative nitride insulating films, or nitride-oxide insulating films can be used as the insulating film 156f. For example, silicon oxidative nitride can be used as the insulating film 156f.

[0224] Subsequently, as shown in FIG. 5(E), by processing the insulating film 156f, an insulating layer 156R, an insulating layer 156G, an insulating layer 156B, and an insulating layer 156C are formed. For example, by performing etching substantially uniformly on the upper surface of the insulating film 156f, the insulating layer 156 can be formed. Such uniform etching and flattening is also referred to as an etch-back process. Note that the insulating layer 156 may be formed using a photolithography method.

[0225] Subsequently, as shown in FIG. 6(A), a conductive film 152f that will later become the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C is formed on the conductive layer 151R, on the conductive layer 151G, on the conductive layer 151B, on the conductive layer 151C, on the insulating layer 156R, on the insulating layer 156G, on the insulating layer 156B, on the insulating layer 156C, and on the insulating layer 175. Specifically, for example, the conductive film 152f is formed so as to cover the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 156C.

[0226] For the formation of the conductive film 152f, for example, a sputtering method or a vacuum evaporation method can be used. Also, for the formation of the conductive film 152f, an ALD method can be used. Further, as the conductive film 152f, for example, a conductive oxide can be used. Alternatively, a laminated structure of a film using a metal material and a film using a conductive oxide on the film can be applied as the conductive film 152f. For example, a laminated structure of a film using titanium, silver, or an alloy containing silver as the conductive film 152f and a film using a conductive oxide on the film can be applied.

[0227] Subsequently, as shown in FIG. 6(B), for example, the conductive film 152f is processed using a photolithography method to form the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C. Specifically, for example, after forming a resist mask, a part of the conductive film 152f is removed by an etching method. The conductive film 152f can be removed by, for example, a wet etching method. Note that the conductive film 152f may be removed by a dry etching method. As described above, a pixel electrode having the conductive layer 151 and the conductive layer 152 is formed.

[0228] Subsequently, it is preferable to perform a hydrophobization treatment on the conductive layer 152. In the hydrophobization treatment, the surface to be treated can be changed from hydrophilic to hydrophobic, or the hydrophobicity of the surface to be treated can be enhanced. By performing the hydrophobization treatment on the conductive layer 152, the adhesion between the conductive layer 152 and the organic compound layer 103 formed in a later step can be enhanced, and film peeling can be suppressed. Note that the hydrophobization treatment may not be performed.

[0229] Subsequently, as shown in FIG. 6(C), an organic compound film 103Bf that will become the organic compound layer 103B is formed over the conductive layer 152B, the conductive layer 152G, the conductive layer 152R, and the insulating layer 175.

[0230] In the present invention, the organic compound film 103Bf includes a plurality of organic compound layers each having at least one light-emitting layer. Specifically, reference can be made to the structure of the light-emitting device described in Embodiment 2. Further, it may have a structure in which a plurality of organic compound layers each having at least one light-emitting layer are stacked via an intermediate layer.

[0231] As shown in FIG. 6(C), the organic compound film 103Bf is not formed over the conductive layer 152C. For example, by using a mask for defining a film formation area (also referred to as an area mask or a rough metal mask, etc., distinguished from a fine metal mask), the organic compound film 103Bf can be formed only in a desired region. By adopting a film formation process using an area mask and a processing process using a resist mask, a light-emitting device can be manufactured with a relatively simple process.

[0232] The organic compound film 103Bf can be formed, for example, by a vapor deposition method, specifically a vacuum vapor deposition method. Alternatively, the organic compound film 103Bf may be formed by methods such as a transfer method, a printing method, an inkjet method, or a coating method.

[0233] Next, as shown in Figure 6(D), a sacrificial film 158Bf, which will later become a sacrificial layer 158B, and a mask film 159Bf, which will later become a mask layer 159B, are formed sequentially on the organic compound film 103Bf.

[0234] For the formation of the sacrificial film 158Bf and the mask film 159Bf, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition can be used. Alternatively, they may be formed using the wet film formation method described above.

[0235] Furthermore, the sacrificial film 158Bf and the mask film 159Bf are formed at a temperature lower than the heat resistance temperature of the organic compound film 103Bf. The substrate temperature when forming the sacrificial film 158Bf and the mask film 159Bf is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, more preferably 100°C or lower, and even more preferably 80°C or lower.

[0236] In this embodiment, an example is shown in which the mask film is formed with a two-layer structure consisting of a sacrificial film 158Bf and a mask film 159Bf. However, the mask film may also be a single-layer structure or a laminated structure of three or more layers.

[0237] By providing a sacrificial film on the organic compound film 103Bf, the damage sustained by the organic compound film 103Bf during the manufacturing process of the light-emitting device can be reduced, thereby improving the reliability of the light-emitting device.

[0238] For the sacrificial film 158Bf, a film with high resistance to the processing conditions of the organic compound film 103Bf is used; specifically, a film with a high etching selectivity ratio with the organic compound film 103Bf. For the mask film 159Bf, a film with a high etching selectivity ratio with the sacrificial film 158Bf is used.

[0239] It is preferable to use films that can be removed by wet etching for the sacrificial film 158Bf and the mask film 159Bf. By using wet etching, the damage to the organic compound film 103Bf during processing of the sacrificial film 158Bf and the mask film 159Bf can be reduced compared to when using dry etching.

[0240] When using the wet etching method, it is particularly preferable to use an acidic solution. Suitable acidic solutions include those containing one of the following: phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixture of two or more acids (also called a mixed acid).

[0241] For the sacrificial film 158Bf and the mask film 159Bf, one or more types can be used, for example, from among metal films, alloy films, metal oxide films, semiconductor films, organic insulating films, and inorganic insulating films.

[0242] Furthermore, by using films containing materials that have light-shielding properties against ultraviolet light for the sacrificial film 158Bf and the mask film 159Bf, it is possible to suppress the irradiation of the organic compound layer with ultraviolet light during, for example, the exposure process. By suppressing damage to the organic compound layer from ultraviolet light, the reliability of the light-emitting device can be improved.

[0243] Furthermore, a film containing a material that has light-shielding properties against ultraviolet rays can be used as a material for the inorganic insulating film 125f described later to achieve the same effect.

[0244] The sacrificial film 158Bf and the mask film 159Bf can be made of metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metallic materials. In particular, it is preferable to use low-melting-point materials such as aluminum or silver.

[0245] Furthermore, the sacrificial film 158Bf and the mask film 159Bf can be made from metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and silicon-containing indium tin oxide, respectively.

[0246] In addition, element M (where M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used instead of gallium.

[0247] Furthermore, it is preferable to use semiconductor materials such as silicon or germanium as the sacrificial film 158Bf and mask film 159Bf because of their high compatibility with semiconductor manufacturing processes. Alternatively, oxides or nitrides of the above semiconductor materials can be used. Alternatively, nonmetallic materials such as carbon, or compounds thereof, can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of these can be used. Alternatively, oxides containing the above metals such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0248] In addition, various inorganic insulating films can be used as the sacrificial film 158Bf and the mask film 159Bf, respectively. In particular, the oxide insulating film is preferable because it has higher adhesion to the organic compound film 103Bf than the nitride insulating film. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the sacrificial film 158Bf and the mask film 159Bf, respectively. As the sacrificial film 158Bf and the mask film 159Bf, an aluminum oxide film can be formed, for example, using the ALD method. Using the ALD method is preferable because damage to the substrate (especially the organic compound layer) can be reduced.

[0249] In addition, an organic material may be used for one or both of the sacrificial film 158Bf and the mask film 159Bf. For example, as the organic material, a material that can be dissolved in a chemically stable solvent may be used for at least the film located at the uppermost part of the organic compound film 103Bf. In particular, a material that can be dissolved in water or alcohol can be preferably used. When forming a film of such a material, it is preferable to perform a heat treatment for evaporating the solvent after coating in a wet film-forming method in a state of being dissolved in a solvent such as water or alcohol. At this time, performing the heat treatment under a reduced-pressure atmosphere is preferable because the solvent can be removed at a low temperature and in a short time, and thus thermal damage to the organic compound film 103Bf can be reduced.

[0250] For the sacrificial film 158Bf and the mask film 159Bf, organic resins such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or fluororesin such as perfluoropolymer may be used, respectively.

[0251] For example, an organic film (e.g., a PVA film) formed using either the vapor deposition method or the above wet film-forming method can be used as the sacrificial film 158Bf, and an inorganic film (e.g., a silicon nitride film) formed using the sputtering method can be used as the mask film 159Bf.

[0252] Next, as shown in Figure 6(D), a resist mask 190B is formed on the mask film 159Bf. The resist mask 190B can be formed by applying a photosensitive material (photoresist), followed by exposure and development.

[0253] The resist mask 190B may be made using either a positive-type resist material or a negative-type resist material.

[0254] The resist mask 190B is provided in a position that overlaps with the conductive layer 152B. Preferably, the resist mask 190B is also provided in a position that overlaps with the conductive layer 152C. This helps to suppress damage to the conductive layer 152C during the manufacturing process of the light-emitting device. It is not necessary to provide the resist mask 190B on the conductive layer 152C. Furthermore, it is preferable that the resist mask 190B be provided so as to cover from the edge of the organic compound film 103Bf to the edge of the conductive layer 152C (the edge on the organic compound film 103Bf side), as shown in the cross-sectional view between B1 and B2 in Figure 6(C).

[0255] Next, as shown in Figure 6(E), a portion of the mask film 159Bf is removed using the resist mask 190B to form the mask layer 159B. The mask layer 159B remains on the conductive layer 152B and the conductive layer 152C. After that, the resist mask 190B is removed. Subsequently, the mask layer 159B is used as a mask (also called a hard mask) to remove a portion of the sacrificial film 158Bf to form the sacrificial layer 158B.

[0256] The sacrificial film 158Bf and the mask film 159Bf can be processed by either a wet etching method or a dry etching method, respectively. It is preferable to process the sacrificial film 158Bf and the mask film 159Bf by wet etching.

[0257] By using the wet etching method, the damage to the organic compound film 103Bf during processing of the sacrificial film 158Bf and the mask film 159Bf can be reduced compared to using the dry etching method. When using the wet etching method, it is preferable to use chemical solutions such as a developer, aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0258] In the processing of the mask film 159Bf, the organic compound film 103Bf is not exposed, thus offering a wider range of processing method options compared to the processing of the sacrificial film 158Bf. Specifically, when processing the mask film 159Bf, even when using an etching gas containing oxygen, the degradation of the organic compound film 103Bf can be further suppressed.

[0259] When using the wet etching method, it is particularly preferable to use an acidic solution. Suitable acidic solutions include those containing one of the following: phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixture of two or more acids (also called a mixed acid).

[0260] Furthermore, when using a dry etching method for processing the sacrificial film 158Bf, the degradation of the organic compound film 103Bf can be suppressed by not using an oxygen-containing gas as the etching gas. When using a dry etching method, it is preferable to use a gas containing a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He as the etching gas.

[0261] The resist mask 190B can be removed in the same manner as the resist mask 191. In this case, the sacrificial film 158Bf is located on the outermost surface, and the organic compound film 103Bf is not exposed, thus preventing damage to the organic compound film 103Bf during the removal process of the resist mask 190B. Furthermore, this expands the range of options for removing the resist mask 190B.

[0262] Next, as shown in Figure 6(E), the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as a hard mask to remove a portion of the organic compound film 103Bf and form the organic compound layer 103B.

[0263] As a result, as shown in Figure 6(E), the laminated structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B. In addition, the conductive layers 152G and 152R are exposed.

[0264] The organic compound film 103Bf can be processed using either dry etching or wet etching. For example, when processing by dry etching, an etching gas containing oxygen can be used. By including oxygen in the etching gas, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently fast etching rate. This suppresses damage to the organic compound film 103Bf. Furthermore, it suppresses defects such as the adhesion of reaction products generated during etching.

[0265] Alternatively, an etching gas that does not contain oxygen may be used. For example, by using an etching gas that does not contain oxygen, the degradation of the organic compound film 103Bf can be suppressed.

[0266] As described above, in one aspect of the present invention, a resist mask 190B is formed on a mask film 159Bf, and a mask layer 159B is formed by removing a portion of the mask film 159Bf using the resist mask 190B. Subsequently, an organic compound layer 103B is formed by removing a portion of the organic compound film 103Bf using the mask layer 159B as a hard mask. Thus, it can be said that an organic compound layer 103B is formed by processing the organic compound film 103Bf using a photolithography method. Note that a portion of the organic compound film 103Bf may be removed using the resist mask 190B. Subsequently, the resist mask 190B may be removed.

[0267] Here, the conductive layer 152G may be hydrophobicized as needed. During processing of the organic compound film 103Bf, the surface state of the conductive layer 152G may change to hydrophilic. For example, by hydrophobicizing the conductive layer 152G, the adhesion between the conductive layer 152G and the layer formed in a later process (in this case, the organic compound layer 103G) can be improved, and film peeling can be suppressed.

[0268] Next, as shown in Figure 7(A), an organic compound film 103Gf, which will later become the organic compound layer 103G, is formed on the conductive layer 152G, the conductive layer 152R, the mask layer 159B, and the insulating layer 175.

[0269] The organic compound film 103Gf can be formed by the same method as that used to form the organic compound film 103Bf. Furthermore, the organic compound film 103Gf can have the same structure as the organic compound film 103Bf.

[0270] Next, as shown in Figure 7(B), a sacrificial film 158Gf, which will later become the sacrificial layer 158G, and a mask film 159Gf, which will later become the mask layer 159G, are formed in order on the organic compound film 103Gf and the mask layer 159B, respectively. After that, the resist mask 190G is formed. The materials and formation methods for the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Bf and the mask film 159Bf. The materials and formation methods for the resist mask 190G are the same as those applicable to the resist mask 190B.

[0271] The resist mask 190G is placed in a position that overlaps with the conductive layer 152G.

[0272] Next, as shown in Figure 7(C), a portion of the mask film 159Gf is removed using the resist mask 190G to form the mask layer 159G. The mask layer 159G remains on the conductive layer 152G. After that, the resist mask 190G is removed. Next, the mask layer 159G is used as a mask to remove a portion of the sacrificial film 158Gf to form the sacrificial layer 158G. Next, the organic compound film 103Gf is processed to form the organic compound layer 103G. For example, the mask layer 159G and the sacrificial layer 158G are used as a hard mask to remove a portion of the organic compound film 103Gf to form the organic compound layer 103G.

[0273] As a result, as shown in Figure 7(C), the laminated structure of the organic compound layer 103G, sacrificial layer 158G, and mask layer 159G remains on the conductive layer 152G. The mask layer 159B and conductive layer 152R are exposed.

[0274] Alternatively, for example, the conductive layer 152R may be subjected to a hydrophobic treatment.

[0275] Next, as shown in Figure 8(A), an organic compound film 103Rf, which will later become the organic compound layer 103R, is formed on the conductive layer 152R, the mask layer 159G, the mask layer 159B, and the insulating layer 175.

[0276] The organic compound film 103Rf can be formed by the same method as that used to form the organic compound film 103Gf. Furthermore, the organic compound film 103Rf can have the same structure as the organic compound film 103Gf.

[0277] Next, as shown in Figures 8(B) and 8(C), a resist mask 190R is used to form a sacrificial layer 158R from the sacrificial film 158Rf, a mask layer 159R from the mask film 159Rf, or an organic compound layer 103R from the organic compound film 103Rf. The method for forming the sacrificial layer 158R, the mask layer 159R, and the organic compound layer 103R can be found in reference to the description of the organic compound layer 103G.

[0278] Furthermore, it is preferable that the sides of the organic compound layer 103B, organic compound layer 103G, and organic compound layer 103R are perpendicular or approximately perpendicular to the surface to be formed. For example, it is preferable that the angle between the surface to be formed and these sides be 60 degrees or more and 90 degrees or less.

[0279] As described above, the distance between two adjacent organic compound layers 103B, 103G, and 103R formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, this distance can be defined, for example, by the distance between two adjacent opposing ends of organic compound layers 103B, 103G, and 103R. By narrowing the distance between the island-like organic compound layers in this way, a light-emitting device with high resolution and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes between adjacent light-emitting devices can also be narrowed, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. It is preferable that the distance between the first electrodes between adjacent light-emitting devices is 2 μm or more and 5 μm or less.

[0280] Next, as shown in Figure 9(A), mask layer 159B, mask layer 159G, and mask layer 159R are removed.

[0281] In this embodiment, the case where mask layers 159B, 159G, and 159R are removed is described as an example, but mask layers 159B, 159G, and 159R do not need to be removed. For example, if mask layers 159B, 159G, and 159R contain the aforementioned light-shielding material against ultraviolet light, the organic compound layer can be protected from light irradiation (including illumination light) by proceeding to the next step without removing them.

[0282] The same method as the mask film processing method can be used for the mask layer removal process. In particular, by using a wet etching method, the damage to the organic compound layer 103B, organic compound layer 103G, and organic compound layer 103R during mask layer removal can be reduced compared to when using a dry etching method.

[0283] Alternatively, the mask layer may be removed by dissolving it in a solvent such as water or alcohol. Examples of alcohols include ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0284] After removing the mask layer, a drying treatment may be performed to remove water contained in the organic compound layer 103B, organic compound layer 103G, and organic compound layer 103R, as well as water adsorbed on the surfaces of organic compound layer 103B, organic compound layer 103G, and organic compound layer 103R. For example, a heat treatment can be performed in an inert atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. A reduced-pressure atmosphere is preferable because it allows drying at a lower temperature.

[0285] Next, as shown in Figure 9(B), an inorganic insulating film 125f, which will later become the inorganic insulating layer 125, is formed to cover the organic compound layer 103B, organic compound layer 103G, organic compound layer 103R, sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R.

[0286] As described later, an insulating film that will later become the insulating layer 127 is formed in contact with the upper surface of the inorganic insulating film 125f. For this reason, it is preferable that the upper surface of the inorganic insulating film 125f has high affinity for the material used for the insulating film that will become the insulating layer 127 (for example, a photosensitive resin composition containing acrylic resin). To improve this affinity, the upper surface of the inorganic insulating film 125f may be surface-treated. Specifically, it is preferable to hydrophobize (or increase the hydrophobicity of) the surface of the inorganic insulating film 125f. For example, it is preferable to treat with a silylation agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of the inorganic insulating film 125f in this way, the insulating film 127f can be formed with good adhesion.

[0287] Next, as shown in Figure 9(C), an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0288] It is preferable to deposit the inorganic insulating film 125f and the insulating film 127f using a method that causes minimal damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. In particular, since the inorganic insulating film 125f is formed in contact with the sides of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, it is preferable to deposit the inorganic insulating film 125f using a method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R than the insulating film 127f.

[0289] Furthermore, the inorganic insulating film 125f and the insulating film 127f are formed at a temperature lower than the heat resistance temperature of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, respectively. In addition, by increasing the substrate temperature during film formation of the inorganic insulating film 125f, it is possible to create a film with a low impurity concentration and high barrier properties against at least one of water and oxygen, even with a thin film thickness.

[0290] The substrate temperature when forming the inorganic insulating film 125f and insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0291] As the inorganic insulating film 125f, it is preferable to form an insulating film with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less, within the above substrate temperature range.

[0292] The inorganic insulating film 125f is preferably formed using, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and allow for the formation of a highly covering film. For example, it is preferable to form an aluminum oxide film as the inorganic insulating film 125f using the ALD method.

[0293] In addition, the inorganic insulating film 125f may be formed using sputtering, CVD, or PECVD, which have faster deposition rates than the ALD method. This allows for the highly reliable production of light-emitting devices with high productivity.

[0294] The insulating film 127f is preferably formed using the wet film formation method described above. The insulating film 127f is preferably formed using a photosensitive material, for example, by spin coating, and more specifically, it is preferably formed using a photosensitive resin composition containing an acrylic resin.

[0295] The insulating film 127f is preferably formed using a resin composition having, for example, a polymer, an acid generator, and a solvent. The polymer is formed using one or more monomers and has a structure in which one or more structural units (also called constituent units) are repeated regularly or irregularly. As the acid generator, one or both of a compound that generates acid upon irradiation with light and a compound that generates acid upon heating can be used. The resin composition may further contain one or more of a photosensitive agent, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0296] Furthermore, it is preferable to perform a heat treatment (also called pre-baking) after the formation of the insulating film 127f. This heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103B, organic compound layer 103G, and organic compound layer 103R. The substrate temperature during the heat treatment is preferably 50°C to 200°C, more preferably 60°C to 150°C, and even more preferably 70°C to 120°C. This allows for the removal of solvent contained in the insulating film 127f.

[0297] Next, exposure is performed to expose a portion of the insulating film 127f to visible light or ultraviolet light. Here, if a positive-type photosensitive resin composition containing acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated to the area where the insulating layer 127 will not be formed in a later step. The insulating layer 127 is formed in the area sandwiched between any two of the conductive layers 152B, 152G, and 152R, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated onto the conductive layer 152B, the conductive layer 152G, the conductive layer 152R, and the conductive layer 152C. If a negative-type photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated to the area where the insulating layer 127 will be formed.

[0298] The width of the insulating layer 127 to be formed later can be controlled by the exposure area of ​​the insulating film 127f. In this embodiment, the insulating layer 127 is processed so that it has a portion that overlaps with the upper surface of the conductive layer 151.

[0299] Here, by providing an oxygen barrier insulating layer (e.g., an aluminum oxide film) as one or both of the sacrificial layer 158 (sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R) and the inorganic insulating film 125f, the diffusion of oxygen into the organic compound layer 103B, organic compound layer 103G, and organic compound layer 103R can be reduced. When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compounds contained in the organic compound layer may become excited, and their reaction with oxygen contained in the atmosphere may be promoted. More specifically, when light (visible light or ultraviolet light) is irradiated onto the organic compound layer in an oxygen-containing atmosphere, oxygen may bind to the organic compounds contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on an island-like organic compound layer, the binding of oxygen in the atmosphere to the organic compounds contained in the organic compound layer can be reduced.

[0300] Next, as shown in Figure 10(A), development is performed to remove the exposed area of ​​the insulating film 127f and form an insulating layer 127a. The insulating layer 127a is formed in the region sandwiched between any two of the conductive layers 152B, 152G, and 152R, and in the region surrounding the conductive layer 152C. Here, when acrylic resin is used for the insulating film 127f, an alkaline solution can be used as the developer, for example, TMAH can be used.

[0301] Next, as shown in Figure 10(B), etching is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f and thin the film thickness of parts of the sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R. As a result, the inorganic insulating layer 125 is formed beneath the insulating layer 127a. In the following, the etching process that processes the inorganic insulating film 125f using the insulating layer 127a as a mask may be referred to as the first etching process.

[0302] In other words, in the first etching process, the sacrificial layers 158B, 158G, and 158R are not completely removed, and the etching process is stopped when the film thickness is reduced. By leaving the corresponding sacrificial layers 158B, 158G, and 158R on the organic compound layers 103B, 103G, and 103R in this way, it is possible to prevent damage to the organic compound layers 103B, 103G, and 103R in subsequent processing steps.

[0303] The first etching process can be carried out by dry etching or wet etching. It is preferable that the inorganic insulating film 125f is deposited using the same material as the sacrificial layers 158B, 158G, and 158R, as this allows for the processing of the inorganic insulating film 125f and the thinning of the exposed sacrificial layer 158 to be performed simultaneously by the first etching process.

[0304] By using the insulating layer 127a, which has a tapered side surface, as a mask for etching, the sides of the inorganic insulating layer 125, and the upper edges of the sides of the sacrificial layers 158B, 158G, and 158R can be made tapered relatively easily.

[0305] For example, when the first etching process is performed by dry etching, a chlorine-based gas can be used. As chlorine-based gases, Cl2, BCl3, SiCl4, and CCl4 can be used individually or in mixtures of two or more gases. In addition, oxygen gas, hydrogen gas, helium gas, and argon gas can be added to the above chlorine-based gas, individually or in mixtures of two or more gases, as appropriate. By using dry etching, thin areas of sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R can be formed with good in-plane uniformity.

[0306] Furthermore, for example, the first etching process can be performed by wet etching. By using the wet etching method, damage to the organic compound layer 103B, organic compound layer 103G, and organic compound layer 103R can be reduced compared to when using the dry etching method.

[0307] Wet etching is preferably performed using an acidic solution. Suitable acidic solutions include those containing one of the following: phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixture of two or more acids (also called a mixed acid).

[0308] Furthermore, the process can be carried out using an alkaline solution. For example, TMAH, an alkaline solution, can be used for wet etching of aluminum oxide films. In this case, wet etching can be performed using a paddle method.

[0309] Next, a heat treatment (also called post-bake) is performed. By performing the heat treatment, the insulating layer 127a can be deformed into an insulating layer 127 having a tapered shape on its side surface (Figure 10(C)). This heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 130°C. The heating atmosphere may be an atmospheric atmosphere or an inert atmosphere. The heating atmosphere may also be an atmospheric pressure atmosphere or a reduced pressure atmosphere. It is preferable that the substrate temperature in this step is higher than that of the heat treatment after the formation of the insulating film 127f (pre-bake).

[0310] Heat treatment improves the adhesion between the insulating layer 127 and the inorganic insulating layer 125, and also improves the corrosion resistance of the insulating layer 127. Furthermore, the deformation of the insulating layer 127a allows the edges of the inorganic insulating layer 125 to be covered by the insulating layer 127.

[0311] In the first etching process, by not completely removing sacrificial layers 158B, 158G, and 158R, and leaving them in a thinned state, it is possible to prevent damage and degradation of organic compound layers 103B, 103G, and 103R during the heat treatment. Therefore, the reliability of the light-emitting device can be improved.

[0312] Next, as shown in Figure 11(A), etching is performed using the insulating layer 127 as a mask to remove a portion of the sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R. In some cases, a portion of the inorganic insulating layer 125 may also be removed during this process. This etching process creates openings in the sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R, exposing the upper surfaces of the organic compound layer 103B, organic compound layer 103G, organic compound layer 103R, and conductive layer 152C through these openings. In the following, the etching process that uses the insulating layer 127 as a mask to expose the organic compound layer 103B, organic compound layer 103G, and organic compound layer 103R may be referred to as the second etching process.

[0313] The second etching process is performed by wet etching. By using the wet etching method, damage to the organic compound layer 103B, organic compound layer 103G, and organic compound layer 103R can be reduced compared to using the dry etching method. Wet etching can be performed using an acidic chemical solution or an alkaline solution, similar to the first etching process.

[0314] Furthermore, after exposing a portion of the organic compound layer 103B, organic compound layer 103G, and organic compound layer 103R, further heat treatment may be performed. This heat treatment can remove water contained in the organic compound layer and water adsorbed on the surface of the organic compound layer. In addition, this heat treatment may change the shape of the insulating layer 127. Specifically, the insulating layer 127 may spread to cover at least one of the following: the edge of the inorganic insulating layer 125, the edge of the sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R, and the upper surface of the organic compound layer 103B, organic compound layer 103G, and organic compound layer 103R.

[0315] Figure 11(A) shows an example where the insulating layer 127 covers a portion of the edge of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process), while the tapered portion formed by the second etching process is exposed (see Figure 4(A)).

[0316] Furthermore, the insulating layer 127 may cover the entire edge of the sacrificial layer 158G. For example, the edge of the insulating layer 127 may hang down and cover the edge of the sacrificial layer 158G. Also, for example, the edge of the insulating layer 127 may be in contact with at least one upper surface of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.

[0317] Next, as shown in Figure 11(B), a common electrode 155 is formed on the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the conductive layer 152C, and the insulating layer 127. The common electrode 155 can be formed by sputtering or vacuum deposition. Alternatively, the common electrode 155 may be formed by laminating a film formed by deposition with a film formed by sputtering.

[0318] Next, as shown in Figure 11(C), a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by methods such as vacuum deposition, sputtering, CVD, or ALD.

[0319] Next, the light-emitting device can be manufactured by bonding the substrate 120 onto the protective layer 131 using the resin layer 122. As described above, in the method for manufacturing a light-emitting device according to one embodiment of the present invention, an insulating layer 156 is provided so as to have an area that overlaps with the side surface of the conductive layer 151, and a conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. This makes it possible to increase the yield of the light-emitting device and suppress the occurrence of defects.

[0320] As described above, in the method for manufacturing a light-emitting device according to one aspect of the present invention, the island-shaped organic compound layers 103B, 103G, and 103R are formed not using a fine metal mask, but by processing after the film is deposited on one surface, so that the island-shaped layers can be formed with a uniform thickness. This makes it possible to realize a light-emitting device with high resolution or a high aperture ratio. Furthermore, even if the resolution or aperture ratio is high and the distance between subpixels is extremely short, it is possible to suppress contact between the organic compound layers 103B, 103G, and 103R in adjacent subpixels. Therefore, it is possible to suppress the generation of leakage current between subpixels. This prevents crosstalk and makes it possible to realize a light-emitting device with extremely high contrast. Moreover, even a light-emitting device having a tandem type light-emitting device manufactured using photolithography can be provided with good characteristics.

[0321] (Embodiment 4) In this embodiment, a light-emitting device according to one aspect of the present invention will be described using Figures 12(A) to 12(G) and Figures 13(A) to 13(I).

[0322] [Pixel layout] This embodiment primarily describes a pixel layout different from that shown in Figure 3. There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0323] In this embodiment, the upper surface shape of the sub-pixel shown in the figure corresponds to the upper surface shape of the light-emitting region.

[0324] Examples of the top surface shape of a sub-pixel include polygons such as triangles, quadrilaterals (including rectangles and squares), pentagons, polygons with rounded corners, ellipses, or circles.

[0325] Furthermore, the circuit layout constituting the sub-pixel is not limited to the sub-pixel range shown in the figure, but may be arranged outside of it.

[0326] The pixel 178 shown in Figure 12(A) has an S-stripe array applied to it. The pixel 178 shown in Figure 12(A) is composed of three subpixels: subpixel 110R, subpixel 110G, and subpixel 110B.

[0327] The pixel 178 shown in Figure 12(B) has sub-pixels 110R with a roughly trapezoidal or triangular top surface shape with rounded corners, sub-pixel 110G with a roughly trapezoidal or triangular top surface shape with rounded corners, and sub-pixel 110B with a roughly square or hexagonal top surface shape with rounded corners. Furthermore, sub-pixel 110R has a larger light-emitting area than sub-pixel 110G. In this way, the shape and size of each sub-pixel can be determined independently. For example, the size of a sub-pixel can be reduced to a smaller size if it has a more reliable light-emitting device.

[0328] A Pentile array is applied to pixels 124a and 124b shown in Figure 12(C). Figure 12(C) shows an example in which pixels 124a having sub-pixels 110R and 110G and pixels 124b having sub-pixels 110G and 110B are arranged alternately.

[0329] Pixels 124a and 124b shown in Figures 12(D) to 12(F) are configured with a delta array. Pixel 124a has two subpixels (subpixels 110R and 110G) in the top row (1st row) and one subpixel (subpixel 110B) in the bottom row (2nd row). Pixel 124b has one subpixel (subpixel 110B) in the top row (1st row) and two subpixels (subpixels 110R and 110G) in the bottom row (2nd row).

[0330] Figure 12(D) shows an example where each subpixel has a roughly square top shape with rounded corners, Figure 12(E) shows an example where each subpixel has a circular top shape, and Figure 12(F) shows an example where each subpixel has a roughly hexagonal top shape with rounded corners.

[0331] In Figure 12(F), each subpixel is located inside a densely arranged hexagonal region. When focusing on one subpixel, each subpixel is arranged so that it is surrounded by six other subpixels. Furthermore, subpixels that emit light of the same color are not adjacent to each other. For example, when focusing on subpixel 110R, three subpixels 110G and three subpixels 110B are arranged alternately around it.

[0332] Figure 12(G) shows an example where the subpixels of each color are arranged in a zigzag pattern. Specifically, in a top view, the upper edges of two subpixels aligned in the row direction (for example, subpixel 110R and subpixel 110G, or subpixel 110G and subpixel 110B) are offset.

[0333] In each pixel shown in Figures 12(A) to 12(G), it is preferable, for example, that sub-pixel 110R emits red light, sub-pixel 110G emits green light, and sub-pixel 110B emits blue light. However, the configuration of the sub-pixels is not limited to this, and the colors emitted by the sub-pixels and their order can be determined as appropriate. For example, sub-pixel 110G may emit red light, and sub-pixel 110R may emit green light.

[0334] In photolithography, the finer the pattern being processed, the more significant the effects of light diffraction become. This compromises the fidelity of transferring the photomask pattern through exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, patterns with rounded corners are likely to form. Consequently, the top surface shape of subpixels may be a polygon with rounded corners, an ellipse, or a circle.

[0335] Furthermore, in a method for manufacturing a light-emitting device according to one embodiment of the present invention, an organic compound layer is processed into an island shape using a resist mask. The resist film formed on the organic compound layer needs to be cured at a temperature lower than the heat resistance temperature of the organic compound layer. Therefore, depending on the heat resistance temperature of the organic compound layer material and the curing temperature of the resist material, the curing of the resist film may be insufficient. A resist film that is not sufficiently cured may take a shape that deviates from the desired shape during processing. As a result, the top surface shape of the organic compound layer may become a polygon with rounded corners, an ellipse, or a circle. For example, if an attempt is made to form a resist mask with a square top surface, a resist mask with a circular top surface may be formed, resulting in a circular top surface shape for the organic compound layer.

[0336] Furthermore, in order to achieve the desired shape of the upper surface of the organic compound layer, a technique (OPC (Optical Proximity Correction) technique) may be used to pre-correct the mask pattern so that the design pattern and the transferred pattern match. Specifically, in the OPC technique, for example, a correction pattern is added to the corners of the shape on the mask pattern.

[0337] As shown in Figures 13(A) to 13(I), a pixel can be configured to have four types of subpixels.

[0338] Pixel 178, shown in Figures 13(A) to 13(C), has a stripe arrangement applied to it.

[0339] Figure 13(A) shows an example where each subpixel has a rectangular top surface shape, Figure 13(B) shows an example where each subpixel has a top surface shape formed by connecting two semicircles and a rectangle, and Figure 13(C) shows an example where each subpixel has an elliptical top surface shape.

[0340] Pixel 178, shown in Figures 13(D) to 13(F), has a matrix array applied to it.

[0341] Figure 13(D) shows an example where each subpixel has a square top surface shape, Figure 13(E) shows an example where each subpixel has a roughly square top surface shape with rounded corners, and Figure 13(F) shows an example where each subpixel has a circular top surface shape.

[0342] Figures 13(G) and 13(H) show an example where one pixel 178 is composed of 2 rows and 3 columns.

[0343] Pixel 178, shown in Figure 13(G), has three subpixels (subpixels 110R, 110G, and 110B) in the top row (row 1) and one subpixel (subpixel 110W) in the bottom row (row 2). In other words, pixel 178 has subpixel 110R in the left column (column 1), subpixel 110G in the middle column (column 2), subpixel 110B in the right column (column 3), and subpixel 110W across these three columns.

[0344] Pixel 178, shown in Figure 13(H), has three subpixels (subpixels 110R, 110G, and 110B) in the top row (1st row) and three subpixels 110W in the bottom row (2nd row). In other words, pixel 178 has subpixels 110R and 110W in the left column (1st column), subpixels 110G and 110W in the middle column (2nd column), and subpixels 110B and 110W in the right column (3rd column). As shown in Figure 13(H), by aligning the arrangement of subpixels in the top row and bottom row, it becomes possible to efficiently remove dust that may be generated during the manufacturing process, for example. Therefore, a light-emitting device with high display quality can be provided.

[0345] In pixel 178 shown in Figures 13(G) and 13(H), the layout of sub-pixels 110R, 110G, and 110B is in a stripe arrangement, which improves the display quality.

[0346] Figure 13(I) shows an example where one pixel 178 is composed of 3 rows and 2 columns.

[0347] Pixel 178, shown in Figure 13(I), has a sub-pixel 110R in the top row (1st row), a sub-pixel 110G in the middle row (2nd row), a sub-pixel 110B spanning from the 1st to the 2nd row, and one sub-pixel (sub-pixel 110W) in the bottom row (3rd row). In other words, pixel 178 has sub-pixels 110R and 110G in the left column (1st column), a sub-pixel 110B in the right column (2nd column), and a sub-pixel 110W spanning these two columns.

[0348] In pixel 178 shown in Figure 13(I), the layout of sub-pixels 110R, 110G, and 110B forms a so-called S-stripe arrangement, which improves display quality.

[0349] The pixel 178 shown in Figures 13(A) to 13(I) is composed of four subpixels: subpixel 110R, subpixel 110G, subpixel 110B, and subpixel 110W. For example, subpixel 110R may be a subpixel that emits red light, subpixel 110G may be a subpixel that emits green light, subpixel 110B may be a subpixel that emits blue light, and subpixel 110W may be a subpixel that emits white light. At least one of subpixels 110R, 110G, 110B, and 110W may be a subpixel that emits cyan light, a subpixel that emits magenta light, a subpixel that emits yellow light, or a subpixel that emits near-infrared light.

[0350] As described above, the light-emitting device according to one aspect of the present invention can be configured to apply various layouts to pixels that consist of subpixels having light-emitting devices.

[0351] This embodiment can be appropriately combined with other embodiments or examples. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be appropriately combined.

[0352] (Embodiment 5) This embodiment describes a light-emitting device according to one aspect of the present invention.

[0353] The light-emitting device of this embodiment can be a high-definition light-emitting device. Therefore, the light-emitting device of this embodiment can be used, for example, in the display units of information terminals (wearable devices) such as wristwatches and bracelets, and in the display units of wearable devices that can be worn on the head, such as VR devices such as head-mounted displays (HMDs) and AR devices such as glasses.

[0354] Furthermore, the light-emitting device of this embodiment can be a high-resolution light-emitting device or a large light-emitting device. Therefore, the light-emitting device of this embodiment can be used in electronic devices with relatively large screens, such as television systems, desktop or notebook personal computers, monitors for computers, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and sound playback devices.

[0355] [Display Module] Figure 14(A) shows a perspective view of the display module 280. The display module 280 includes a light-emitting device 100A and an FPC 290. Note that the light-emitting device of the display module 280 is not limited to light-emitting device 100A, but may be either light-emitting device 100B or light-emitting device 100C, which will be described later.

[0356] The display module 280 has substrates 291 and 292. The display module 280 has a display unit 281. The display unit 281 is an area in the display module 280 that displays an image, and is an area in which light from each pixel provided in the pixel unit 284, which will be described later, can be seen.

[0357] Figure 14(B) shows a schematic perspective view illustrating the configuration of the substrate 291. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to the FPC 290 is provided in the portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286, which is composed of multiple wires.

[0358] The pixel section 284 has a plurality of pixels 284a arranged periodically. A magnified view of one pixel 284a is shown on the right side of Figure 14(B). Various configurations described in the previous embodiment can be applied to the pixel 284a. Figure 14(B) shows an example where the pixel 284a has the same configuration as the pixel 178 shown in Figure 3.

[0359] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0360] A single pixel circuit 283a is a circuit that controls the driving of multiple elements in a single pixel 284a. A single pixel circuit 283a can be configured to have three circuits that control the light emission of a single light-emitting device. For example, a single pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. This realizes an active-matrix type light-emitting device.

[0361] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it may have at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0362] The FPC290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An IC may also be mounted on the FPC290.

[0363] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are stacked on the lower side of the pixel section 284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display section 281. For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, enabling an extremely high resolution of the display section 281. For example, it is preferable that the pixels 284a are arranged in the display section 281 with a resolution of 20000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and a resolution of 20000 ppi or less, or 30000 ppi or less.

[0364] Because such a display module 280 is extremely high-resolution, it can be suitably used in VR devices such as HMDs or AR devices such as glasses. For example, even in a configuration where the display part of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display part 281, so even when the display part is magnified with lenses, pixels are not visible, and a highly immersive display can be achieved. Furthermore, the display module 280 is not limited to this and can be suitably used in electronic devices with relatively small display parts. For example, it can be suitably used in the display part of wearable electronic devices such as watches.

[0365] [Light-emitting device 100A] The light-emitting device 100A shown in Figure 15(A) includes a substrate 301, light-emitting devices 130R, 130G, 130B, a capacitor 240, and a transistor 310.

[0366] Substrate 301 corresponds to substrate 291 in Figures 14(A) and 14(B). Transistor 310 is a transistor having a channel formation region in substrate 301. For substrate 301, a semiconductor substrate such as a single-crystal silicon substrate can be used. Transistor 310 has a part of substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region of substrate 301 doped with impurities and functions as a source or drain. The insulating layer 314 is provided covering the side surface of the conductive layer 311.

[0367] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0368] Furthermore, an insulating layer 261 is provided covering the transistor 310, and a capacitance 240 is provided on the insulating layer 261.

[0369] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 acts as one electrode of the capacitor 240, the conductive layer 245 acts as the other electrode of the capacitor 240, and the insulating layer 243 acts as the dielectric of the capacitor 240.

[0370] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to either the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided covering the conductive layer 241. The conductive layer 245 is provided in the region that overlaps with the conductive layer 241 via the insulating layer 243.

[0371] An insulating layer 255 is provided covering the capacitance 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. Light-emitting devices 130R, 130G, and 130B are provided on the insulating layer 175. Figure 15(A) shows an example in which light-emitting devices 130R, 130G, and 130B have the laminated structure shown in Figure 1(A). An insulator is provided in the region between adjacent light-emitting devices. For example, in Figure 15(A), an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in that region.

[0372] An insulating layer 156R is provided so as to have a region that overlaps with the side surface of the conductive layer 151R of the light-emitting device 130R, an insulating layer 156G is provided so as to have a region that overlaps with the side surface of the conductive layer 151G of the light-emitting device 130G, and an insulating layer 156B is provided so as to have a region that overlaps with the side surface of the conductive layer 151B of the light-emitting device 130B. In addition, a conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R, a conductive layer 152G is provided so as to cover the conductive layer 151G and the insulating layer 156G, and a conductive layer 152B is provided so as to cover the conductive layer 151B and the insulating layer 156B. Furthermore, a sacrificial layer 158R is located on the organic compound layer 103R of the light-emitting device 130R, a sacrificial layer 158G is located on the organic compound layer 103G of the light-emitting device 130G, and a sacrificial layer 158B is located on the organic compound layer 103B of the light-emitting device 130B.

[0373] The conductive layers 151R, 151G, and 151B are electrically connected to either the source or drain of the transistor 310 by the insulating layers 243, 255, 174, and a plug 256 embedded in the insulating layer 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 175 and the height of the top surface of the plug 256 are equal or approximately equal. Various conductive materials can be used for the plugs.

[0374] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. Details of the components from the light-emitting device 130 to the substrate 120 can be found in Embodiment 3. The substrate 120 corresponds to the substrate 292 in Figure 14(A).

[0375] Figure 15(B) shows a modified example of the light-emitting device 100A shown in Figure 15(A). The light-emitting device shown in Figure 15(B) has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light-emitting device 130 has a region that overlaps with one of the colored layers 132R, 132G, and 132B. In the light-emitting device shown in Figure 15(B), the light-emitting device 130 can emit, for example, white light. Also, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0376] [Light-emitting device 100B] Figure 16 shows a perspective view of the light-emitting device 100B, and Figure 17(A) shows a cross-sectional view of the light-emitting device 100B.

[0377] The light-emitting device 100B has a configuration in which substrate 352 and substrate 351 are bonded together. In Figure 16, substrate 352 is indicated by a dashed line.

[0378] The light-emitting device 100B includes a pixel section 177, a connection section 140, a circuit 356, and wiring 355, etc. Figure 16 shows an example in which an IC (integrated circuit) 354 and an FPC 353 are mounted on the light-emitting device 100B. Therefore, the configuration shown in Figure 16 can also be called a display module having a light-emitting device 100B, an IC, and an FPC. Here, a display module is defined as a light-emitting device with a connector such as an FPC attached to its substrate, or a substrate on which an IC is mounted.

[0379] The connection portion 140 is provided on the outside of the pixel portion 177. The connection portion 140 can be provided along one or more sides of the pixel portion 177. There may be one or more connection portions 140. Figure 16 shows an example in which the connection portion 140 is provided so as to surround all four sides of the pixel portion 177. At the connection portion 140, the common electrode of the light-emitting device and the conductive layer are electrically connected, and a potential can be supplied to the common electrode.

[0380] For example, a scan line drive circuit can be used as circuit 356.

[0381] The wiring 355 has the function of supplying signals and power to the pixel unit 177 and the circuit 356. These signals and power are input to the wiring 355 from an external source via the FPC 353 or from the IC 354.

[0382] Figure 16 shows an example in which IC 354 is provided on the substrate 351 using the COG (Chip On Glass) method or COF (Chip On Film) method, etc. IC 354 can be an IC having, for example, a scan line driving circuit or a signal line driving circuit. Note that the light-emitting device 100B and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC, for example, using the COF method.

[0383] Figure 17(A) shows an example of a cross-section obtained by cutting a portion of the area including the FPC 353, a portion of the circuit 356, a portion of the pixel portion 177, a portion of the connection portion 140, and a portion of the area including the end portion of the light-emitting device 100B.

[0384] The light-emitting device 100B shown in Figure 17(A) includes a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light, etc., between substrates 351 and 352.

[0385] Light-emitting devices 130R, 130G, and 130B each have the stacked structure shown in Figure 1(A), except that they differ in the configuration of their pixel electrodes. Details of the light-emitting devices can be found in the previous embodiment.

[0386] Light-emitting device 130R has a conductive layer 224R, a conductive layer 151R on the conductive layer 224R, and a conductive layer 152R on the conductive layer 151R. Light-emitting device 130G has a conductive layer 224G, a conductive layer 151G on the conductive layer 224G, and a conductive layer 152G on the conductive layer 151G. Light-emitting device 130B has a conductive layer 224B, a conductive layer 151B on the conductive layer 224B, and a conductive layer 152B on the conductive layer 151B. Here, the conductive layers 224R, 151R, and 152R can all be collectively called the pixel electrodes of light-emitting device 130R, and the conductive layers 151R and 152R excluding the conductive layer 224R can also be called the pixel electrodes of light-emitting device 130R. Similarly, conductive layers 224G, 151G, and 152G can all be collectively referred to as the pixel electrodes of the light-emitting device 130G, and conductive layers 151G and 152G (excluding conductive layer 224G) can also be referred to as the pixel electrodes of the light-emitting device 130G. Furthermore, conductive layers 224B, 151B, and 152B can all be collectively referred to as the pixel electrodes of the light-emitting device 130B, and conductive layers 151B and 152B (excluding conductive layer 224B) can also be referred to as the pixel electrodes of the light-emitting device 130B.

[0387] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. The edge of the conductive layer 151R is located outside the edge of the conductive layer 224R. The insulating layer 156R is provided so as to have a region in contact with the side surface of the conductive layer 151R, and the conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R.

[0388] The conductive layers 224G, 151G, 152G, and insulating layer 156G in the light-emitting device 130G, and the conductive layers 224B, 151B, 152B, and insulating layer 156B in the light-emitting device 130B are the same as the conductive layers 224R, 151R, 152R, and insulating layer 156R in the light-emitting device 130R, so a detailed explanation is omitted.

[0389] The conductive layer 224R, conductive layer 224G, and conductive layer 224B have recesses formed to cover the openings provided in the insulating layer 214. Layer 128 is embedded in these recesses.

[0390] Layer 128 has the function of flattening the recesses of conductive layers 224R, 224G, and 224B. Conductive layers 151R, 151G, and 151B are provided on conductive layers 224R, 224G, and 224B and on layer 128, and are electrically connected to conductive layers 224R, 224G, and 224B. Therefore, regions overlapping with the recesses of conductive layers 224R, 224G, and 224B can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixels.

[0391] Layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for layer 128 as appropriate. In particular, it is preferable that layer 128 be formed using an insulating material, and especially preferable that it be formed using an organic insulating material. For example, an organic insulating material that can be used for the insulating layer 127 described above can be applied to layer 128.

[0392] A protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. The protective layer 131 and the substrate 352 are bonded via an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. A solid encapsulation structure or a hollow encapsulation structure can be applied to encapsulate the light-emitting devices 130. In Figure 17(A), the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, indicating a solid encapsulation structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), indicating a hollow encapsulation structure. In this case, the adhesive layer 142 may be provided in a frame shape so as not to overlap with the light-emitting devices. Furthermore, the space may be filled with a resin different from the adhesive layer 142 provided in a frame shape.

[0393] Figure 17(A) shows an example in which the connection portion 140 has a conductive layer 224C obtained by processing the same conductive film as conductive layers 224R, 224G, and 224B; a conductive layer 151C obtained by processing the same conductive film as conductive layers 151R, 151G, and 151B; and a conductive layer 152C obtained by processing the same conductive film as conductive layers 152R, 152G, and 152B. Figure 17(A) also shows an example in which an insulating layer 156C is provided so as to have a region that overlaps with the side surface of conductive layer 151C.

[0394] The light-emitting device 100B is of the top-emission type. The light emitted by the light-emitting device is emitted towards the substrate 352. It is preferable to use a material with high transmittance to visible light for the substrate 352. The pixel electrodes contain a material that reflects visible light, and the counter electrodes (common electrodes 155) contain a material that transmits visible light.

[0395] Both transistors 201 and 205 are formed on the substrate 351. These transistors can be manufactured using the same materials and processes.

[0396] On the substrate 351, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0397] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the light-emitting device can be improved.

[0398] It is preferable to use inorganic insulating films for insulating layer 211, insulating layer 213, and insulating layer 215. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, or aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above insulating films may be laminated together.

[0399] An organic insulating layer is preferred for the insulating layer 214, which functions as a planarizing layer. Examples of materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This suppresses the formation of depressions in the insulating layer 214 during processing of the conductive layer 224R, conductive layer 151R, or conductive layer 152R, etc. Alternatively, depressions may be provided in the insulating layer 214 during processing of the conductive layer 224R, conductive layer 151R, or conductive layer 152R, etc.

[0400] Transistors 201 and 205 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0401] The structure of the transistor in the light-emitting device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, or an inverse staggered transistor can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0402] Transistors 201 and 205 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0403] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors having a crystalline region in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0404] The semiconductor layer of the transistor preferably has a metal oxide. In other words, the light-emitting device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0405] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0406] Alternatively, a transistor using silicon as the channel-forming region (Si transistor) may be used. Examples of silicon include single-crystal silicon, polycrystalline silicon, or amorphous silicon. In particular, a transistor having low-temperature polysilicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0407] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (e.g., source driver circuits) can be fabricated on the same board as the display unit. This simplifies the external circuits mounted on the light-emitting device, reducing component and mounting costs.

[0408] OS transistors have extremely high field-effect mobility compared to transistors using amorphous silicon. Furthermore, OS transistors exhibit remarkably low source-drain leakage current (hereinafter also referred to as off-current) in the off state, allowing them to retain charge stored in a capacitor connected in series with the transistor for extended periods. Additionally, the application of OS transistors can reduce the power consumption of light-emitting devices.

[0409] Furthermore, to increase the luminescence brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, so a higher voltage can be applied between the source and drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the light-emitting device.

[0410] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be supplied to a light-emitting device even if there are variations in the current-voltage characteristics of the light-emitting device. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0411] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices."

[0412] The semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, it is preferable that M is one or more selected from aluminum, gallium, yttrium, and tin.

[0413] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also written as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also written as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also written as IAGZO).

[0414] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include compositions where In:M:Zn=1:1:1 or close to it, In:M:Zn=1:1:1.2 or close to it, In:M:Zn=2:1:3 or close to it, In:M:Zn=3:1:2 or close to it, In:M:Zn=4:2:3 or close to it, In:M:Zn=4:2:4.1 or close to it, In:M:Zn=5:1:3 or close to it, In:M:Zn=5:1:6 or close to it, In:M:Zn=5:1:7 or close to it, In:M:Zn=5:1:8 or close to it, In:M:Zn=6:1:6 or close to it, In:M:Zn=5:2:5 or close to it, and so on. Note that "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0415] For example, when describing an atomic ratio of In:Ga:Zn = 4:2:3 or a composition close to that, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing an atomic ratio of In:Ga:Zn = 5:1:6 or a composition close to that, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing an atomic ratio of In:Ga:Zn = 1:1:1 or a composition close to that, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0416] The transistors in circuit 356 and the transistors in pixel unit 177 may have the same structure or different structures. The structures of the multiple transistors in circuit 356 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in pixel unit 177 may all be the same or there may be two or more different structures.

[0417] All of the transistors in the pixel section 177 may be OS transistors, all of the transistors in the pixel section 177 may be Si transistors, or some of the transistors in the pixel section 177 may be OS transistors and the rest may be Si transistors.

[0418] For example, by using both LTPS transistors and OS transistors in the pixel section 177, a light-emitting device with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. It is preferable, for example, to use an OS transistor as a switch to control the conduction and non-conductivity of wiring, and an LTPS transistor as a transistor to control current.

[0419] For example, one of the transistors in the pixel section 177 functions as a transistor for controlling the current flowing to the light-emitting device and can be called a drive transistor. One of the source and drain of the drive transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor for this drive transistor. This makes it possible to increase the current flowing to the light-emitting device in the pixel circuit.

[0420] On the other hand, the other transistor in the pixel unit 177 functions as a switch to control the selection and deselection of pixels, and can also be called a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). It is preferable to use an OS transistor for the selection transistor. This allows the pixel gradation to be maintained even when the frame frequency is significantly reduced (e.g., 1 fps or less), and thus power consumption can be reduced by stopping the driver when displaying still images.

[0421] Thus, a light-emitting device according to one aspect of the present invention can combine a high aperture ratio, high resolution, high display quality, and low power consumption.

[0422] Furthermore, one embodiment of the present invention is a light-emitting device having an OS transistor and a light-emitting device with an MML (metal maskless) structure. This configuration makes it possible to extremely low leakage current that can flow through the transistor and leakage current that can flow between adjacent light-emitting devices (sometimes referred to as lateral leakage current, transverse leakage current, or lateral leakage current). In addition, with this configuration, when an image is displayed on the light-emitting device, the observer can observe one or more of the following: image sharpness, image clarity, high saturation, and high contrast ratio. Moreover, by having an extremely low leakage current that can flow through the transistor and transverse leakage current between light-emitting devices, it is possible to achieve a display with as little light leakage (so-called black floating) that may occur when displaying black as possible.

[0423] In particular, among MML-structured light-emitting devices, applying the SBS (Side By Side) structure, which involves creating or coating different light-emitting layers, results in a configuration where the layers between light-emitting devices (for example, an organic layer used in common between light-emitting devices, also called a common layer) are separated, thus eliminating or significantly reducing side leakage.

[0424] Figures 17(B) and 17(C) show other examples of transistor configurations.

[0425] Transistors 209 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0426] In the transistor 209 shown in Figure 17(B), an example is shown where the insulating layer 225 covers the top and sides of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively. Of the conductive layers 222a and 222b, one functions as the source and the other as the drain.

[0427] On the other hand, in the transistor 210 shown in Figure 17(C), the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 17(C) can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 17(C), an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215.

[0428] A connection portion 204 is provided in the region of substrate 351 where substrate 352 does not overlap. At the connection portion 204, the wiring 355 is electrically connected to the FPC 353 via the conductive layer 166 and the connecting layer 242. The conductive layer 166 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layers 224R, 224G, and 224B, a conductive film obtained by processing the same conductive film as conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing the same conductive film as conductive layers 152R, 152G, and 152B. On the upper surface of the connection portion 204, the conductive layer 166 is exposed. This allows the connection portion 204 and the FPC 353 to be electrically connected via the connecting layer 242.

[0429] It is preferable to provide a light-shielding layer 157 on the surface of the substrate 352 that faces the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, at connection points 140, and in circuits 356, etc. In addition, various optical components can be arranged on the outside of the substrate 352.

[0430] Materials that can be used for substrate 120 can be applied to substrate 351 and substrate 352, respectively.

[0431] As the adhesive layer 142, a material that can be used for the resin layer 122 can be applied.

[0432] As the connecting layer 242, an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP) can be used.

[0433] [Light-emitting device 100H] The light-emitting device 100H shown in Figure 18 differs from the light-emitting device 100B shown in Figure 17(A) mainly in that it is a bottom-emission type light-emitting device.

[0434] The light emitted by the light-emitting device is projected onto the substrate 351. It is preferable to use a material with high transparency to visible light for the substrate 351. On the other hand, the light transmittance of the material used for the substrate 352 is not a requirement.

[0435] It is preferable to form a light-shielding layer 157 between the substrate 351 and the transistor 201, and between the substrate 351 and the transistor 205. Figure 18 shows an example in which a light-shielding layer 157 is provided on the substrate 351, an insulating layer 153 is provided on the light-shielding layer 157, and transistors 201, 205, etc. are provided on the insulating layer 153.

[0436] The light-emitting device 130R includes a conductive layer 112R, a conductive layer 126R on the conductive layer 112R, and a conductive layer 129R on the conductive layer 126R.

[0437] The light-emitting device 130B includes a conductive layer 112B, a conductive layer 126B on the conductive layer 112B, and a conductive layer 129B on the conductive layer 126B.

[0438] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are made of materials with high transmittance to visible light. It is preferable to use a material that reflects visible light for the common electrode 155.

[0439] Although the light-emitting device 130G is not shown in Figure 18, it is also provided.

[0440] Furthermore, while Figure 18 and others show an example where the upper surface of layer 128 has a flat portion, the shape of layer 128 is not particularly limited.

[0441] [Light-emitting device 100C] The light-emitting device 100C shown in Figure 19(A) is a modified version of the light-emitting device 100B shown in Figure 17(A), and differs from the light-emitting device 100B mainly in that it has a colored layer 132R, a colored layer 132G, and a colored layer 132B.

[0442] In the light-emitting device 100C, the light-emitting device 130 has a region that overlaps with one of the colored layers 132R, 132G, and 132B. The colored layers 132R, 132G, and 132B can be provided on the substrate 351 side of the substrate 352. The edges of the colored layer 132R, the edges of the colored layer 132G, and the edges of the colored layer 132B can overlap with the light-shielding layer 157.

[0443] In the light-emitting device 100C, the light-emitting device 130 can emit, for example, white light. Also, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light. The light-emitting device 100C may also be configured to have the colored layers 132R, 132G, and 132B placed between the protective layer 131 and the adhesive layer 142.

[0444] Figures 17(A) and 19(A), etc., show examples in which the upper surface of layer 128 has a flat portion, but the shape of layer 128 is not particularly limited. Figures 19(B) to 19(D) show modified examples of layer 128.

[0445] As shown in Figures 19(B) and 19(D), the upper surface of layer 128 can have a shape that is concave in the center and its vicinity when viewed in cross-section, that is, a concave curved surface. Alternatively, a common layer 154 may be provided so as to be in contact with the common electrode 155.

[0446] Furthermore, as shown in Figure 19(C), the upper surface of layer 128 can be configured to have a shape that bulges in the center and its vicinity in a cross-sectional view, that is, a shape having a convex curved surface.

[0447] Furthermore, the upper surface of layer 128 may have one or both of a convex and a concave surface. Also, the number of convex and concave surfaces on the upper surface of layer 128 is not limited and can be one or more.

[0448] Furthermore, the height of the top surface of layer 128 and the height of the top surface of conductive layer 224R may be the same, approximately the same, or different from each other. For example, the height of the top surface of layer 128 may be lower or higher than the height of the top surface of conductive layer 224R.

[0449] Furthermore, Figure 19(B) can be seen as an example in which layer 128 is housed inside a recess formed in the conductive layer 224R. On the other hand, as shown in Figure 19(D), layer 128 may exist outside the recess formed in the conductive layer 224R, that is, the width of the upper surface of layer 128 may be wider than that of the recess.

[0450] This embodiment can be appropriately combined with other embodiments or examples. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be appropriately combined.

[0451] (Embodiment 6) This embodiment describes an electronic device according to one aspect of the present invention.

[0452] The electronic device of this embodiment has a light-emitting device according to one aspect of the present invention in its display unit. The light-emitting device according to one aspect of the present invention is highly reliable and easily capable of high-definition and high-resolution displays. Therefore, it can be used in the display units of various electronic devices.

[0453] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, and other electronic devices with relatively large screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0454] In particular, since the light-emitting device according to one aspect of the present invention can increase resolution, it can be suitably used in electronic devices having a relatively small display area. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0455] A light-emitting device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the light-emitting device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a light-emitting device having high resolution and / or high detail, it becomes possible to further enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices. Furthermore, there are no particular limitations on the aspect ratio of the light-emitting device according to one embodiment of the present invention. For example, the light-emitting device can support various aspect ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0456] The electronic device of this embodiment may have sensors (including those with functions to measure force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0457] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0458] Figures 20(A) to 20(D) illustrate an example of a wearable device that can be worn on the head. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device that has the function to display at least one of the following content types, such as AR, VR, SR, and MR, it is possible to enhance the user's sense of immersion.

[0459] The electronic device 700A shown in Figure 20(A) and the electronic device 700B shown in Figure 20(B) each include a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0460] A light-emitting device according to one embodiment of the present invention can be applied to the display panel 751. Therefore, a highly reliable electronic device can be made.

[0461] Electronic devices 700A and 700B can project an image displayed on the display panel 751 onto the display area 756 of the optical element 753. Because the optical element 753 is translucent, the user can see the image displayed on the display area superimposed on the transmitted image visible through the optical element 753. Therefore, electronic devices 700A and 700B are electronic devices capable of AR display.

[0462] Electronic devices 700A and 700B may be equipped with cameras capable of capturing images of the area in front of them as imaging units. Furthermore, electronic devices 700A and 700B may each be equipped with acceleration sensors such as gyro sensors to detect the orientation of the user's head and display an image corresponding to that orientation in the display area 756.

[0463] The communications unit has a wireless communication device, which can supply, for example, a video signal. Alternatively, instead of the wireless communication device, or in addition to the wireless communication device, it may be equipped with a connector to which a cable supplying video signals and power potential can be connected.

[0464] Furthermore, electronic devices 700A and 700B are equipped with batteries that can be charged wirelessly, wired, or both.

[0465] The housing 721 may be equipped with a touch sensor module. The touch sensor module has the function of detecting when the outer surface of the housing 721 is touched. The touch sensor module can detect the user's tap or slide operations and perform various processes. For example, a tap operation can be used to pause or resume the video, and a slide operation can be used to fast forward or rewind. Furthermore, by providing a touch sensor module in each of the two housings 721, the range of operations can be expanded.

[0466] Various types of touch sensors can be used in the touch sensor module. For example, various methods such as capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, or optical sensors can be employed. In particular, it is preferable to apply capacitive or optical sensors to the touch sensor module.

[0467] When using an optical touch sensor, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light-receiving element. The active layer of the photoelectric conversion device can be made of either an inorganic semiconductor or an organic semiconductor, or both.

[0468] The electronic device 800A shown in Figure 20(C) and the electronic device 800B shown in Figure 20(D) each include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0469] A light-emitting device according to one embodiment of the present invention can be applied to the display unit 820. Therefore, a highly reliable electronic device can be made.

[0470] The display unit 820 is located inside the housing 821, in a position where it can be seen through the lens 832. Furthermore, by displaying different images on a pair of display units 820, a three-dimensional display using parallax can also be performed.

[0471] Electronic devices 800A and 800B can be described as electronic devices for VR. A user wearing electronic device 800A or electronic device 800B can view the image displayed on the display unit 820 through the lens 832.

[0472] It is preferable that electronic devices 800A and 800B each have a mechanism that allows adjustment of the left and right positions of the lens 832 and the display unit 820 so that they are in the optimal position according to the user's eye position. It is also preferable that they have a mechanism that adjusts the focus by changing the distance between the lens 832 and the display unit 820.

[0473] The attachment portion 823 allows the user to attach the electronic device 800A or 800B to their head. Note that, for example, in Figure 20(C), it is illustrated as having a shape similar to the temple (joint, or arm, etc.) of eyeglasses, but it is not limited to this. The attachment portion 823 only needs to be wearable by the user; for example, it may be in the shape of a helmet or a band.

[0474] The imaging unit 825 has the function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, multiple cameras may be provided to accommodate multiple angles of view, such as telephoto and wide-angle.

[0475] Although an example with an imaging unit 825 is shown here, any distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object can be provided. In other words, the imaging unit 825 is one form of a detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging) can be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired, enabling more accurate gesture control.

[0476] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, housing 821, and mounting unit 823. This allows users to enjoy video and audio simply by wearing the electronic device 800A, without needing separate audio equipment such as headphones, earphones, or speakers.

[0477] Electronic devices 800A and 800B may each have input terminals. Cables can be connected to the input terminals to supply video signals from video output devices, etc., and power for charging batteries provided within the electronic devices.

[0478] An electronic device according to one aspect of the present invention may have a function for wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., voice data) from the electronic device through its wireless communication function. For example, the electronic device 700A shown in Figure 20(A) has a function for transmitting information to the earphone 750 through its wireless communication function. Also, for example, the electronic device 800A shown in Figure 20(C) has a function for transmitting information to the earphone 750 through its wireless communication function.

[0479] Furthermore, the electronic device may have an earphone section. The electronic device 700B shown in Figure 20(B) has an earphone section 727. For example, the earphone section 727 and the control unit can be connected to each other by a wire. Part of the wiring connecting the earphone section 727 and the control unit may be located inside the housing 721 or the mounting section 723.

[0480] Similarly, the electronic device 800B shown in Figure 20(D) has an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be connected to each other by a wire. Part of the wiring connecting the earphone unit 827 and the control unit 824 may be located inside the housing 821 or the mounting unit 823. Also, the earphone unit 827 and the mounting unit 823 may have magnets. This allows the earphone unit 827 to be fixed to the mounting unit 823 by magnetic force, which is preferable as it facilitates storage.

[0481] Furthermore, the electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have an audio input terminal and / or an audio input mechanism. For example, a microphone or other sound-collecting device can be used as the audio input mechanism. By having an audio input mechanism, the electronic device may be given the function of a so-called headset.

[0482] Thus, as one embodiment of the present invention, both eyeglass-type (electronic devices 700A and 700B, etc.) and goggle-type (electronic devices 800A and 800B, etc.) are preferred as electronic devices.

[0483] Furthermore, an electronic device according to one aspect of the present invention can transmit information to earphones via wired or wireless means.

[0484] The electronic device 6500 shown in Figure 21(A) is a portable information terminal that can be used as a smartphone.

[0485] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0486] A light-emitting device according to one embodiment of the present invention can be applied to the display unit 6502. Therefore, a highly reliable electronic device can be made.

[0487] Figure 21(B) is a schematic cross-sectional view of the housing 6501 including the end on the microphone 6506 side.

[0488] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, and battery 6518 are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0489] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0490] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0491] A light-emitting device according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel section, an electronic device with a narrow bezel can be realized.

[0492] Figure 21(C) shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7171. Here, the housing 7171 is shown supported by a stand 7173.

[0493] A light-emitting device according to one embodiment of the present invention can be applied to the display unit 7000. Therefore, a highly reliable electronic device can be made.

[0494] The television device 7100 shown in Figure 21(C) can be operated using the operation switches on the housing 7171 and a separate remote control unit 7151. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7151 may have a display unit that displays information output from the remote control unit 7151. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7151.

[0495] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0496] Figure 21(D) shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0497] A light-emitting device according to one embodiment of the present invention can be applied to the display unit 7000. Therefore, a highly reliable electronic device can be made.

[0498] Figures 21(E) and 21(F) show examples of digital signage.

[0499] The digital signage 7300 shown in Figure 21(E) comprises a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may have LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0500] Figure 21(F) shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0501] In Figures 21(E) and 21(F), a light-emitting device according to one embodiment of the present invention can be applied to the display unit 7000. Therefore, a highly reliable electronic device can be made.

[0502] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0503] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000, but also allows users to operate it intuitively. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0504] Furthermore, as shown in Figures 21(E) and 21(F), it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. In addition, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0505] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0506] The electronic equipment shown in Figures 22(A) to 22(G) includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0507] The electronic devices shown in Figures 22(A) to 22(G) have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0508] Details of the electronic equipment shown in Figures 22(A) to 22(G) will be explained below.

[0509] Figure 22(A) is a perspective view showing a personal digital information terminal (PDI) 9171. The PDI 9171 can be used, for example, as a smartphone. The PDI 9171 may also be equipped with a speaker 9003, a connection terminal 9006, or a sensor 9007. Furthermore, the PDI 9171 can display text and image information on multiple surfaces. Figure 22(A) shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the subject of emails or SNS messages, the sender's name, date and time, time, battery level, signal strength, etc. Alternatively, icons 9050, etc., may be displayed in the position where the information 9051 is displayed.

[0510] Figure 22(B) is a perspective view showing the personal digital assistant (PDA) 9172. The PDA 9172 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9172, while the PDA 9172 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9172 out of their pocket and decide, for example, whether or not to answer a call.

[0511] Figure 22(C) is a perspective view showing the tablet terminal 9173. The tablet terminal 9173 can run various applications, such as mobile phone calls, email, document viewing and creation, music playback, internet communication, and computer games. The tablet terminal 9173 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000. Operation keys 9005 are located on the left side of the housing 9000 as buttons for operation, and connection terminals 9006 are located on the bottom.

[0512] Figure 22(D) is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via the connection terminal 9006. Charging may be performed by wireless power supply.

[0513] Figures 22(E) to 22(G) are perspective views showing a foldable portable information terminal 9201. Figure 22(E) shows the portable information terminal 9201 in an unfolded state, Figure 22(G) shows it in a folded state, and Figure 22(F) shows a perspective view of the state in between Figures 22(E) and 22(G). The portable information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0514] This embodiment can be appropriately combined with other embodiments or examples. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be appropriately combined. [Examples]

[0515] This example describes the physical properties and synthesis method of an organometallic complex according to one embodiment of the present invention. Specifically, an example of the synthesis of the organometallic complex of the present invention, represented by structural formula (100) in Embodiment 1, (2-{3-[3-(3,5-di-tert-butylphenyl)benzimidazole-1-yl-2-ylidene-κC2]phenoxy-κC2}-9-(4-phenyl-2-pyridinyl-κN)carbazole-2,1-diyl-κC)platinum(II) (abbreviation: Pt(mmtBubOcz4ppy)), is illustrated.

[0516] <Step 1: Synthesis of 2-fluoro-4-phenylpyridine> First, 2.5 g of 2-fluoro-4-iodopyridine, 2.7 g of phenylboronic acid, 7.1 g of tripotassium phosphate, 44 mL of 1,4-dioxane, and 11 mL of water were placed in a three-necked flask fitted with a reflux condenser, and the inside was purged with nitrogen. After degassing by stirring under reduced pressure in the flask, 1.0 g of tetrakis(triphenylphosphine)palladium(0) (abbreviation: Pd(PPh3)4) was added, and the reaction was carried out by stirring at 85°C for 13 hours.

[0517] After a predetermined time had elapsed, extraction with toluene was performed. The resulting residue was purified by silica gel column chromatography using hexane:toluene = 1:5 as the developing solvent to obtain the target product (red oil, yield 1.7 g, yield 89%). The synthesis scheme for Step 1 is shown below (a-1).

[0518] [ka]

[0519] <Step 2: Synthesis of 2-bromo-9-(4-phenylpyridine-2-yl)carbazole> Next, 1.7 g of 2-fluoro-4-phenylpyridine, 2.6 g of 2-bromocarbazole, 6.5 g of cesium carbonate, and 23 mL of N-methyl-2-pyrrolidone (abbreviated as NMP) obtained in step 1 were placed in a three-necked flask fitted with a reflux condenser, and the inside was purged with nitrogen. The mixture was then stirred at 140°C for 7.5 hours to allow the reaction to proceed.

[0520] After a predetermined time had elapsed, extraction with toluene was performed. The resulting residue was purified by silica gel column chromatography using hexane:toluene = 1:5 as the developing solvent to obtain the target product (white solid, yield 3.9 g, yield 98%). The synthesis scheme for Step 2 is shown below (a-2).

[0521] [ka]

[0522] <Step 3: Synthesis of 2-hydroxy-9-(4-phenylpyridine-2-yl)carbazole> Next, 3.9 g of 2-bromo-9-(4-phenylpyridine-2-yl)carbazole obtained in step 2 above, 2.0 g of sodium tert-butoxide, 39 mL of dimethyl sulfoxide, and 10 mL of water were placed in a three-necked flask fitted with a reflux condenser, and the inside was purged with nitrogen. After degassing by stirring the flask under reduced pressure, 0.048 g of copper(I) chloride (abbreviated as CuCl) and 0.16 g of N1,N2-bis(4-hydroxy-2,6-dimethylphenyl)oxalamide were added, and the reaction was carried out by stirring at 110°C for 3.5 hours.

[0523] After a predetermined time had elapsed, extraction with ethyl acetate was performed. The resulting residue was purified by recrystallization with toluene to obtain the target product (pale orange solid, yield 2.6 g, yield 79%). The synthesis scheme for Step 3 is shown below (a-3).

[0524] [ka]

[0525] <Step 4: Synthesis of 2-[3-(benzoimidazole-1-yl)phenoxy]-9-(4-phenylpyridine-2-yl)carbazole> Next, 2.6 g of 2-hydroxy-9-(4-phenylpyridine-2-yl)carbazole, 2.3 g of 1-(3-bromophenyl)benzimidazole, 3.3 g of tripotassium phosphate, and 77 mL of dimethyl sulfoxide obtained in step 3 above were placed in a three-necked flask fitted with a reflux condenser, and the inside was purged with nitrogen. After degassing by stirring the flask under reduced pressure, 0.15 g of copper(I) iodide (abbreviated as CuI) and 0.10 g of picolinic acid were added, and the mixture was reacted by stirring at 160°C for 7.5 hours.

[0526] After the predetermined time had elapsed, extraction with ethyl acetate was performed. The obtained residue was purified by silica gel column chromatography using toluene:ethyl acetate = 10:1 as the developing solvent to obtain the target product (brown solid, yield 3.8 g, yield 92%). The synthesis scheme for step 4 is shown below (a-4).

[0527] [ka]

[0528] <Step 5; Synthesis of 1-(3,5-di-tert-butylphenyl)-3-(3-{[9-(4-phenylpyridine-2-yl)carbazole-2-yl]oxy}phenyl)benzimidazolium-1,1,1-trifluoromethanesulfonic acid> Next, 3.8 g of 2-[3-(benzimidazole-1-yl)phenoxy]-9-(4-phenylpyridine-2-yl)carbazole obtained in step 4 above and 36 mL of N,N-dimethylformamide (DMF) were placed in a three-necked flask fitted with a reflux condenser, and the inside was purged with nitrogen. After degassing by stirring under reduced pressure in the flask, 0.19 g of copper(II) acetate (Cu(OAc)2) was added and heated at 100°C. A solution of 8.3 g of (3,5-di-tert-butylphenyl)(mesityl)iodonium trifluoromethanesulfonic acid dissolved in 80 mL of DMF was added dropwise, and the mixture was reacted by stirring at 100°C for 2 hours.

[0529] After a predetermined time, the solvent was removed by distillation, and the resulting residue was purified by silica gel column chromatography using dichloromethane:acetone = 9:1 as the developing solvent to obtain the target product (dark red oil, yield 5.1 g, yield 100%). The synthesis scheme for step 5 is shown below (a-5).

[0530] [ka]

[0531] <Step 6; Synthesis of (2-{3-[3-(3,5-di-tert-butylphenyl)benzimidazole-1-yl-2-ylidene-κC2]phenoxy-κC2}-9-(4-phenyl-2-pyridinyl-κN)carbazole-2,1-diyl-κC)platinum(II) (abbreviation: Pt(mmtBubOcz4ppy))> Next, 5.1 g of 1-(3,5-di-tert-butylphenyl)-3-(3-{[9-(4-phenylpyridine-2-yl)carbazole-2-yl]oxy}phenyl)benzimidazolium-1,1,1-trifluoromethanesulfonic acid obtained in step 5 above, 3.2 g of dichloro(1,5-cyclooctadiene)platinum(II), 1.8 g of sodium acetate, and 320 mL of N,N-dimethylformamide were placed in a three-necked flask fitted with a reflux condenser, and the inside was purged with nitrogen. The mixture was then reacted by stirring at 160°C for 1.5 hours.

[0532] After a predetermined time, the solvent was removed by distillation, and extraction was performed with dichloromethane. The resulting residue was purified by silica gel column chromatography using toluene as the developing solvent, and then recrystallized with toluene to obtain the target product (yellow solid, yield 1.0 g, yield 15%).

[0533] The obtained yellow solid (0.80 g) was purified by sublimation using the train sublimation method. The sublimation purification conditions were a pressure of 3.1 Pa and heating of the solid at 335°C. After sublimation purification, the target yellow solid was obtained in a yield of 0.61 g and 76%. The synthesis scheme for Step 6 is shown below (a-6).

[0534] [ka]

[0535] Furthermore, nuclear magnetic resonance spectroscopy of the yellow solid obtained in step 6 above ( 1 The results of the analysis by 1H-NMR are shown below. 1 The 1H-NMR chart is shown in Figure 23. From this, it can be seen that in this synthesis example, an organometallic complex, Pt(mmtBubOcz4ppy) (abbreviated), which is one embodiment of the present invention represented by the above-mentioned structural formula (100), was obtained.

[0536] 1H-NMR.δ(CD2Cl2,500MHz):1.34(brs,18H),6.32(dd,1H,J=6.5,1.5Hz),7.11(d,1H,J=8.0Hz),7.33(t,1H,J=8.0Hz),7.36-7.48(m ,11H),7.53(t,1H,J=6.5Hz),7.65-7.66(m,3H),7.84-7.87(m,2H),8.07-8.09(m,2H),8.25(d,1H,J=8.0Hz),8.88(d,1H,J=6.5Hz).

[0537] <Emission and absorption spectrum measurement> Next, the ultraviolet-visible absorption spectrum (hereinafter simply referred to as "absorption spectrum") and emission spectrum (PL spectrum) of Pt(mmtBubOcz4ppy) (abbreviation) in a dichloromethane solution were measured. A UV-Vis spectrophotometer (V550, JASCO Corporation) was used to measure the absorption spectrum. A spectrofluorometer (FP8600, JASCO Corporation) was used to measure the emission spectrum. The measurement results of the absorption and emission spectra of the obtained dichloromethane solution are shown in Figure 24. The horizontal axis represents wavelength, and the vertical axis represents absorption intensity and emission intensity.

[0538] As shown in Figure 24, a dichloromethane solution of Pt(mmtBubOcz4ppy) (abbreviation) showed a peak in the absorption spectrum at a wavelength of around 420 nm and a peak in the emission spectrum at a wavelength of around 529 nm.

[0539] <Thermogravimetric measurement results> Thermogravimetric analysis-differential thermal analysis (TG-DTA) was performed on Pt(mmtBubOcz4ppy). The results are shown in Figure 25. A vacuum-controlled high-vacuum top-loading differential differential thermal balance (NETC Japan Co., Ltd., TG-DTA STA2500) was used for the measurements.

[0540] The measurements were performed under two conditions. The first condition involved a heating rate of 10°C / min, a nitrogen flow (flow rate 100 mL / min), and a pressure equivalent to atmospheric pressure. The second condition involved a heating rate of 10°C / min, a nitrogen flow (flow rate 1.0 mL / min), and a pressure of 10 Pa.

[0541] Figure 25 shows that, in thermogravimetric analysis-differential thermal analysis, the decomposition temperature of Pt(mmtBubOcz4ppy) at atmospheric pressure was 489°C, at which the weight obtained from thermogravimetric analysis became -5% of the weight at the start of measurement. On the other hand, when the measuring device was controlled to 10 Pa, the sublimation temperature was 313°C, at which the weight obtained from thermogravimetric analysis became -5% of the weight at the start of measurement. Therefore, the difference between the sublimation temperature and the decomposition temperature was 176°C.

[0542] In short, Pt(mmtBubOcz4ppy) was demonstrated to be a material with high heat resistance. Furthermore, because the difference between the sublimation temperature and the decomposition temperature is more than 100°C, a stable deposition process is possible in the production process when used in devices. Therefore, by using Pt(mmtBubOcz4ppy), it is possible to provide devices with good yield and high productivity. [Examples]

[0543] In this example, a light-emitting device 1 was fabricated using the organometallic complex (2-{3-[3-(3,5-di-tert-butylphenyl)benzimidazole-1-yl-2-ylidene-κC2]phenoxy-κC2}-9-(4-phenyl-2-pyridinyl-κN)carbazole-2,1-diyl-κC)platinum(II) (abbreviation: Pt(mmtBubOcz4ppy)) which is one embodiment of the present invention as described in Example 1, and a comparative light-emitting device 2 was fabricated using the organometallic complex (2-{3-[3-(3,5-di-tert-butylphenyl)benzimidazole-1-yl-2-ylidene-κC2]phenoxy-κC2}-9-(4-tert-butyl-2-pyridinyl-κN)carbazole-2,1-diyl-κC1)platinum(II) (abbreviation: PtON-TBBI) for comparison.

[0544] The structural formulas of the organic compounds used in light-emitting device 1 and comparative light-emitting device 2 are shown below.

[0545] [ka]

[0546] As shown in Figure 26, each light-emitting device has a structure in which a hole injection layer 911, a hole transport layer 912, a light-emitting layer 913, an electron transport layer 914, and an electron injection layer 915 are sequentially stacked on a first electrode 901 formed on a glass substrate 900, and a second electrode 902 is stacked on the electron injection layer 915.

[0547] <Method for fabricating light-emitting device 1> A first electrode 901 was formed on a glass substrate 900 by sputtering a film of indium tin oxide (ITSO) containing silicon oxide to a thickness of 70 nm. The electrode area was 4 mm². 2 (2mm x 2mm)

[0548] Next, as a pretreatment for forming the light-emitting device on the substrate, the substrate was washed with water and fired at 200°C for 1 hour. After that, 1 × 10 -4 The substrate was introduced into a vacuum deposition apparatus where the internal pressure was reduced to approximately Pa, and vacuum firing was performed at 170°C for 30 minutes in the heating chamber within the vacuum deposition apparatus. After that, it was allowed to cool naturally.

[0549] Next, the substrate on which the first electrode 901 is formed is fixed to a substrate holder provided in a vacuum deposition apparatus so that the surface on which the first electrode 901 is formed faces downwards. N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviated as PCBBiF) and an electron acceptor material (OCHD-003) containing fluorine with a molecular weight of 672 are co-deposited on the first electrode 901 in a ratio of PCBBiF:OCHD-003 = 1:0.03 (by weight) to form a hole injection layer 911 with a film thickness of 10 nm.

[0550] Next, PCBBiF was deposited onto the hole injection layer 911 to a thickness of 30 nm, and then 9-[3-(triphenylsilyl)phenyl]-3,9'-bi-9H-carbazole (abbreviated as PSiCzCz) was deposited to a thickness of 5 nm to form the hole transport layer 912.

[0551] Next, on the hole transport layer 912, 9,9'-{6-[3-(triphenylsilyl)phenyl]-1,3,5-triazine-2,4-diyl}bis(9H-carbazole) (abbreviated as SiTrzCz2), PSiCzCz, and Pt(mmtBubOcz4ppy) were co-deposited using a resistive heating method in a weight ratio of SiTrzCz2:PSiCzCz:Pt(mmtBubOcz4ppy) = 0.45:0.45:0.1 to form a light-emitting layer 913 with a film thickness of 35 nm. Note that SiTrzCz2 and PSiCzCz are a combination that forms an excited complex.

[0552] Next, 2-phenyl-4,6-bis[3-(triphenylsilyl)phenyl]-1,3,5-triazine (abbreviated as mSiTrz) was deposited onto the light-emitting layer 913 to a thickness of 5 nm, and then 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhen2P) was deposited to a thickness of 20 nm to form the electron transport layer 914.

[0553] Next, lithium fluoride (LiF) was deposited onto the electron transport layer 914 to a thickness of 1 nm to form an electron injection layer 915.

[0554] Next, a second electrode 902 was formed by depositing aluminum (Al) onto the electron injection layer 915 to a thickness of 200 nm.

[0555] <Method for fabricating comparative light-emitting device 2> Next, we will explain how to fabricate the comparative light-emitting device 2 for comparison.

[0556] The comparative light-emitting device 2 differs from light-emitting device 1 in the configuration of its light-emitting layer 913. Specifically, comparative light-emitting device 2 was formed by co-depositing SiTrzCz2, PSiCzCz, and PtON-TBBI in a weight ratio of SiTrzCz2:PSiCzCz:PtON-TBBI = 0.45:0.45:0.1 to a film thickness of 35 nm using a deposition method with resistance heating, thereby forming the light-emitting layer 913.

[0557] The other components were fabricated in the same manner as in light-emitting device 1.

[0558] The element structures of the above-mentioned light-emitting device 1 and comparative light-emitting device 2 are summarized in Table 1 below. In the table, X represents Pt(mmtBubOcz4ppy) or PtON-TBBI.

[0559] [Table 1]

[0560] <Light-emitting device characteristics> Each of the above-mentioned light-emitting devices was sealed with a glass substrate in a glove box under a nitrogen atmosphere to prevent exposure to the atmosphere (sealing material was applied around the element, UV treatment was performed during sealing, and heat treatment was performed at 80°C for 1 hour). After this, the characteristics of the light-emitting devices were measured.

[0561] Figure 27 shows the luminance-current density characteristics of each light-emitting device, Figure 28 shows the luminance-voltage characteristics, Figure 29 shows the current efficiency-current density characteristics, Figure 30 shows the current density-voltage characteristics, Figure 31 shows the power efficiency-current density characteristics, Figure 32 shows the external quantum efficiency-current density characteristics, and Figure 33 shows the field emission spectrum.

[0562] Furthermore, the brightness of each light-emitting device is 1000 cd / m². 2Table 2 shows the main characteristics of the system. A spectroradiometer (Topcon SR-UL1R) was used to measure luminance, CIE chromaticity, and field emission spectrum. The external quantum efficiency was calculated using the luminance and field emission spectrum measured with the spectroradiometer, assuming that the optical distribution characteristics were Lambertsian.

[0563] [Table 2]

[0564] Light-emitting device 1 showed a higher external quantum efficiency compared to comparative light-emitting device 2. This is because Pt(mmtBubOcz4ppy), an organometallic complex according to one aspect of the present invention, has a phenyl group at the 4-position of pyridine, which reduces the non-radiative rate constant and improves the light extraction efficiency. Improved orientation is also a contributing factor. Furthermore, the improved quantum yield in the PMMA dispersed thin film, described later, also contributed to the high external quantum efficiency of light-emitting device 1.

[0565] Based on the above, it was found that light-emitting device 1 is a light-emitting device that exhibits good characteristics.

[0566] Next, to investigate the luminescence properties of Pt(mmtBubOcz4ppy), an organometallic complex according to one embodiment of the present invention used in light-emitting device 1, and PtON-TBBI, a comparative organometallic complex used in comparative light-emitting device 2, solutions were prepared by dispersing each material at a concentration of 4.8 wt% in PMMA (poly(methyl methacrylate)) using deoxygenated dichloromethane as the solvent. These solutions were then deposited onto a quartz substrate by drop casting and dried in a glove box under a nitrogen stream at room temperature for 30 minutes to obtain PMMA-dispersed thin films of each material. The emission spectra and quantum yields of the obtained PMMA-dispersed thin films were measured. The results are shown in Table 3 below. The measurement apparatus used was an absolute PL quantum yield analyzer (Quantaurus-QY C11347-01, Hamamatsu Photonics).

[0567] [Table 3]

[0568] Next, the phosphorescence lifetimes of Pt(mmtBubOcz4ppy) and PtON-TBBI were measured. A picosecond fluorescence lifetime measurement system (Hamamatsu Photonics) was used for the measurements, and PMMA dispersed thin films of each material were used. In this measurement, a pulsed laser was irradiated onto the PMMA dispersed thin film, and the emission that decayed after laser irradiation was measured in time-resolved data using a streak camera. A nitrogen gas laser with a wavelength of 337 nm (LTB MNL106PD) was used as the pulsed laser, and the PMMA dispersed thin film was irradiated with a period of 10 Hz. Data with a high signal-to-noise ratio was obtained by integrating the repeatedly measured data. The measurements were also performed at room temperature (in an atmosphere maintained at 23°C (296 K)). The phosphorescence lifetime τ of each material was defined as the time until the emission intensity decayed to 1 / e times the emission intensity, with time t=0 being any point in the range where the emission intensity decays exponentially in the measurement data. Using the phosphorescence lifetime τ obtained in this way and the quantum yield Φ mentioned above, the radiation rate constant k is calculated using the following equations (1) and (2). r and non-radiative rate constant k nr It is possible to find this.

[0569]

number

[0570] Quantum yield Φ, phosphorescence lifetime τ, and radiation rate constant k for each material. r and non-radiative rate constant k nr The results are shown in the table below.

[0571] [Table 4]

[0572] From the table above, comparing Pt(mmtBubOcz4ppy) and PtON-TBBI, it was found that the quantum yield of Pt(mmtBubOcz4ppy) is higher than that of PtON-TBBI. Furthermore, it was found that the phosphorescence lifetime of Pt(mmtBubOcz4ppy) is longer than that of PtON-TBBI. Radiation rate constant k r While the non-radiative rate constant k is equivalent for each material, nr It was found that Pt(mmtBubOcz4ppy) has a smaller non-radiative rate constant than PtON-TBBI. A smaller non-radiative rate constant indicates that Pt(mmtBubOcz4ppy) was able to suppress non-radiative deactivation.

[0573] Pt(mmtBubOcz4ppy) is characterized by having a phenyl group at the 4-position of the pyridine ring. It has been found that having a phenyl group at the 4-position of the pyridine ring has the effect of preventing internal relaxation to vibrational levels where non-radiative deactivation is likely to occur when vibrational relaxation occurs from a higher-order triplet excited state in the excited state, compared to PtON-TBBI which does not have a phenyl group at the 4-position of the pyridine ring. [Explanation of Symbols]

[0574] 10 Light-emitting devices 100A Light-emitting device 100B Light-emitting device 100C Light-emitting device 100H Light-emitting device 101 First electrode 102 Second electrode 103a Organic compound layer 103B Organic compound layer 103b Organic compound layer 103Bf Organic compound film 103G organic compound layer 103Gf organic compound film 103R Organic compound layer 103Rf Organic compound film 103 Organic compound layer 104 Common layer 106a Charge generation layer 106b Charge generation layer 106 Charge generation layer 110B subpixel 110G sub-pixels 110R sub-pixel 110W sub-pixel 110 subpixels 111 Hole injection layer 112B Conductive layer 112R conductive layer 112 Hole transport layer 113a Light-emitting layer 113b Emitting layer 113c emissive layer 113 Emitting layer 114 Electron transport layer 115 Electron injection layer 118_1 Organic compounds 118_2 Organic compounds 118 Host Materials 119 Guest Materials 120 circuit boards 122 Resin layer 124a pixels 124b pixels 125f inorganic insulating film 125 Inorganic insulating layer 126B Conductive layer 126R conductive layer 127a Insulating layer 127f insulating film 127 Insulating layer 128 layers 129B Conductive layer 129R conductive layer 130B Light-emitting device 130G Light-emitting Device 130R Light-emitting Device 130 Light-emitting devices 131 Protective layer 132B Colored layer 132G colored layer 132R colored layer 140 Connection part 141 areas 142 Adhesive layer 151_1 Conductive layer 151_2 Conductive layer 151_3 Conductive layer 151B Conductive layer 151C conductive layer 151f Conductive film 151G conductive layer 151R conductive layer 151 Conductive layer 152_1 Conductive layer 152_2 Conductive layer 152_3 Conductive layer 152B Conductive layer 152C conductive layer 152f Conductive film 152G conductive layer 152R conductive layer 152 Conductive layer 153 Insulating layer 154 Common layer 155 Common electrode 156B Insulating layer 156C insulating layer 156f insulating film 156G insulating layer 156R Insulating Layer 156 Insulating layer 157 Light blocking layer 158B Sacrifice Layer 158Bf sacrificial membrane 158G Sacrifice Layer 158Gf sacrificial membrane 158R Sacrifice Layer 158Rf sacrificial membrane 158 layers of victims 159B Mask layer 159Bf mask film 159G mask layer 159 Gf mask film 159R mask layer 159Rf mask membrane 166 Conductive layer 171 Insulating layer 172 Conductive layer 173 Insulating layer 174 Insulating layer 175 Insulating layer 176 plug 177 pixel section 178 pixels 179 Conductive layer 190R Resist Mask 190B Resist Mask 190G Resist Mask 191 Resist Mask 201 Transistors 204 Connection part 205 transistors 209 transistors 210 transistors 211 Insulating layer 213 Insulating layer 214 Insulating layer 215 Insulating layer 218 Insulating layer 221 Conductive layer 222a conductive layer 222b Conductive layer 223 Conductive layer 224B Conductive layer 224C conductive layer 224G conductive layer 224R conductive layer 225 Insulating layer 231i Channel formation region 231n Low resistance region 231 Semiconductor layer 240 capacity 241 Conductive layer 242 Connecting Layers 243 Insulating layer 245 Conductive layer 254 Insulating layer 255 Insulating layer 256 plug 261 Insulating layer 271 Plug 280 Display Modules 281 Display section 282 Circuit section 283a Pixel Circuit 283 Pixel Circuit Section 284a pixels 284 pixel section 285 Terminal section 286 Wiring section 290 FPC 291 circuit boards 292 circuit boards 301 circuit board 310 transistors 311 Conductive layer 312 Low resistance region 313 Insulating layer 314 Insulating layer 315 element isolation layer 351 circuit board 352 circuit boards 353 FPC 354 IC 355 Wiring 356 circuits 700A electronic equipment 700B Electronic equipment 721 cabinet 723 Mounting part 727 Earphone section 750 Earphones 751 Display Panel 753 Optical components 756 Display area 757 frames 758 Nose pads 800A electronic equipment 800B Electronic equipment 820 Display section 821 cabinet 822 Communications Department 823 Mounting part 824 Control Unit 825 Imaging Unit 827 Earphone section 832 Lens 900 glass substrate 901 First electrode 902 Second electrode 911 Hole injection layer 912 Hole transport layer 913 Emitting layer 914 Electron transport layer 915 Electron injection layer 1000 Light-emitting devices 6500 Electronic equipment 6501 enclosure 6502 Display section 6503 Power button 6504 button 6505 Speaker 6506 Mike 6507 Camera 6508 Light source 6510 Protective component 6511 Display Panel 6512 Optical components 6513 Touch Sensor Panel 6515 FPC 6516 IC 6517 Printed circuit board 6518 Battery 7000 Display 7100 Television equipment 7151 Remote Control Unit 7171 enclosure 7173 Stand 7200 Notebook Personal Computer 7211 enclosure 7212 Keyboard 7213 Pointing device 7214 External connection port 7300 Digital Signage 7301 enclosure 7303 Speaker 7311 Information terminal 7400 Digital Signage 7401 pillars 7411 Information terminal 9000 cabinets 9001 Display section 9002 Camera 9003 Speaker 9005 Operation Keys 9006 Connection terminal 9007 Sensor 9008 Microphone 9050 Icon 9051 Information 9052 Information 9053 Information 9054 Information 9055 Hinge 9171 Mobile Information Terminal 9172 Mobile Information Terminal 9173 Tablet device 9200 Mobile Information Terminal 9201 Mobile Information Terminal

Claims

1. An organometallic complex represented by the general formula (G1). 【Chemistry 1】 (In the above general formula (G1), R １ ~R ２３ Each of these independently represents one of the following: hydrogen (including deuterium), a C1 to C10 alkyl group, a C1 to C10 alkoxy group, a C1 to C20 silyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, and a cyano group.

2. An organometallic complex represented by structural formula (100). 【Chemistry 2】

3. A light-emitting device having an organometallic complex according to claim 1 or claim 2.

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