Semiconductor device and method for manufacturing the same

Abstract

The present invention provides a semiconductor device that can suppress the deterioration of the waterproof performance of the detection element. [Solution] The semiconductor device according to this disclosure comprises a base member, a detection element provided on the base member and having a first surface on which a detection unit is arranged, an insulating protective film covering the detection unit and the first surface, and a resin package provided on the base member and having an exposure hole that exposes the detection unit of the detection element to the outside via the protective film, and covering the detection element in the portion excluding the exposure hole. At least a portion of the outer edge of the first surface is exposed in the exposure hole. The resin package has a recess along the portion of the outer edge that is exposed in the exposure hole. The detection element comprises a second surface extending from the outer edge toward the base member, a third surface extending outward from the second surface when viewed from a direction perpendicular to the first surface, and a fourth surface extending from the third surface toward the base member. The protective film covers the detection unit and the first surface as well as the second surface.

Description

Technical Field

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[0001] The present disclosure relates to a semiconductor device having a resin package and a method for manufacturing the same.

Background Art

[0002] For example, in Patent Document 1, a detection element having a detection unit disposed on a first surface is provided on a base member, and a resin package having an exposure hole for exposing the detection unit to the outside is provided on the base member, and a semiconductor device in which a concave portion is formed on the outer peripheral edge of the first surface of the detection element is disclosed.

[0003] In the semiconductor device disclosed in Patent Document 1, in the manufacturing process, when the detection element sinks into the release film adhered to the mold surface, a wall-like portion is formed around the detection unit. As a result, when the resin material is filled thereafter, the resin material is prevented from covering the detection unit by the wall-like portion. When the resin material is cured to form a resin package and the mold is removed, the portion that was the wall-like portion becomes the concave portion.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the semiconductor device disclosed in Patent Document 1, the portion exposed outside the detection element (the first surface of the detection element including the detection unit) is waterproofed by a passivation film (protective film).

[0006] However, the semiconductor device disclosed in Patent Document 1 has a recess formed on the outer peripheral edge of the upper surface of the detection element. Due to the formation of this recess, a portion of the side surface of the detection element (the surface extending downward from the outer edge of the first surface), particularly a portion close to the first surface of the detection element, may be exposed without being covered by the resin package. As a result, the exposed side surface of the detection element may come into contact with water. In other words, the detection element may not be waterproof.

[0007] Therefore, the object of this disclosure is to provide a semiconductor device that can suppress a decrease in the waterproof performance of a detection element, and a method for manufacturing the semiconductor device, in order to solve the aforementioned problems. [Means for solving the problem]

[0008] To achieve the aforementioned objective, this disclosure is structured as follows: A semiconductor device relating to one aspect of this disclosure is Base member and A detection element provided on the base member and having a first surface on which a detection unit is arranged, An insulating protective film covering the detection unit and the first surface, The resin package is provided on the base member and has an exposure hole that exposes the detection portion of the detection element to the outside via the protective film, and covers the detection element in the portion excluding the exposure hole, At least a portion of the outer edge of the first surface is exposed within the exposure hole, The resin package has a recess along the portion of the outer edge that is exposed within the exposed hole, The aforementioned detection device is A second surface extending from the outer peripheral edge toward the base member, A third surface extending outward from the second surface when viewed from a direction perpendicular to the first surface, The present invention further comprises a fourth surface extending from the third surface toward the base member, The protective film covers the detection unit and the first surface, as well as the second surface.

[0009] A method for manufacturing a semiconductor device according to one aspect of this disclosure is: A method for manufacturing a semiconductor device, comprising a base member on which a detection element having a first surface on which a detection unit is arranged is provided, and a resin package having an exposure hole for exposing the detection unit of the detection element to the outside, A first groove is formed on the main surface of the substrate so as to divide the main surface into multiple regions. The main surface including the first groove is covered with an insulating protective film. The substrate coated with the protective film along the first groove is cut to divide the substrate into a plurality of detection elements. The detection element is placed on the base member, A release film is applied to a mold having a cavity with a protrusion, The mold is positioned relative to the base member such that the first surface of the detection element is embedded in the portion of the release film on the top surface of the protrusion. The molten resin material is filled into the cavity of the mold. The mold and the release film are separated from the resin package, which is a cured resin material. In a view from the opposite direction between the protrusion of the mold and the first surface of the detection element, at least a portion of the outer peripheral edge of the top surface of the protrusion is located outside the outer peripheral edge of the first surface. [Effects of the Invention]

[0010] According to this disclosure, it is possible to suppress the deterioration of the waterproof performance of the detection element. [Brief explanation of the drawing]

[0011] [Figure 1] Perspective view of a semiconductor device according to Embodiment 1 of the present disclosure [Figure 2] Top view of a semiconductor device according to Embodiment 1 of this disclosure [Figure 3A] Cross-sectional view of a semiconductor device along line AA in Figure 2. [Figure 3B] Cross-sectional view of a semiconductor device along line BB in Figure 2. [Figure 4]Enlarged view of the portion surrounded by the dashed line in FIG. 3B [Figure 5A] Diagram showing one step in the fabrication of the detection element [Figure 5B] Diagram showing one step in the fabrication of the detection element following the process of FIG. 5A [Figure 5C] Diagram showing one step in the fabrication of the detection element following the process of FIG. 5B [Figure 5D] Diagram showing one step in the fabrication of the detection element following the process of FIG. 5C [Figure 6A] Diagram showing one step in the fabrication of the resin package [Figure 6B] Diagram showing one step in the fabrication of the resin package following the process of FIG. 6A [Figure 6C] Diagram showing one step in the fabrication of the resin package following the process of FIG. 6B [Figure 6D] Diagram showing one step in the fabrication of the resin package following the process of FIG. 6C [Figure 7] Top view of the semiconductor device showing the positional and size relationships between the mold and the detection element [Figure 8] Diagram showing the process shown in FIG. 6C, depicting the semiconductor device in different cross-sections [Figure 9] Top view of the semiconductor device according to Embodiment 2 of the present disclosure [Figure 10A] Cross-sectional view of the semiconductor device taken along line C-C of FIG. 7 [Figure 10B] Cross-sectional view of the semiconductor device taken along line D-D of FIG. 7

Embodiments for Carrying Out the Invention

[0012] (Embodiment 1) FIG. 1 is a perspective view of a semiconductor device according to Embodiment 1 of the present invention. FIG. 2 is a top view of the semiconductor device according to Embodiment 1. FIGS. 3A and 3B are cross-sectional views of the semiconductor device according to Embodiment 1, taken along lines A-A and B-B of FIG. 2. Note that the X-Y-Z orthogonal coordinate system shown in these figures is for facilitating the understanding of the present invention and does not limit the invention.

[0013] As shown in Figures 1 to 3, the semiconductor device 10 according to this embodiment 1 is a pressure sensor for measuring pressure, and comprises a base member 12, a detection element 14 provided on the base member 12, and a protective film 15 covering a part of the detection element 14. In this embodiment 1, a circuit element 16 is provided on the base member 12. In this embodiment 1, the semiconductor device 10 has a resin package 18 provided on the base member 12. The pressure measured by the semiconductor device 10 can be absolute pressure, gauge pressure, differential pressure, airflow pressure, etc. Note that the protective film 15 is not shown in the top view of Figure 2, and in the top views of Figures 7 and 9 described later.

[0014] As shown in Figures 2, 3A, and 3B, the base member 12 is a substrate having one main surface 12a, and is a wiring substrate such as a ceramic substrate or a resin substrate. The base member 12 may also be a lead frame. The detection element 14 and the circuit element 16 are arranged side by side on the one main surface 12a of the base member 12. In this embodiment 1, the detection element 14 and the circuit element 16 are fixed to the one main surface 12a of the base member 12 by an adhesive member (not shown). A die attach film or die bond material can be used as the adhesive member.

[0015] As shown in Figures 2 and 3A, one main surface 12a of the base member 12 is provided with a connection terminal 12b that is electrically connected to the detection element 14 via a bonding wire 20, and a connection terminal 12c that is electrically connected to the circuit element 16 via a bonding wire 22.

[0016] As shown in Figures 3A and 3B, the base member 12 has a main surface 12d opposite to one main surface 12a, and the other main surface 12d is provided with an external connection terminal 12e for electrically connecting to other external electronic devices (not shown).

[0017] In this embodiment 1, the detection element 14 is a pressure sensor element for measuring pressure. The detection element 14 is, for example, a piezoresistive pressure sensor element or a capacitive pressure sensor element, and is a MEMS (Micro Electro Mechanical Systems) element.

[0018] As shown in Figure 3A, the detection element 14 comprises one main surface 141, another main surface 142 opposite to the first main surface 141, and a side surface 143. The side surface 143 connects the first main surface 141 and the other main surface 142. The first main surface 141 is an example of a first surface.

[0019] Figure 4 is an enlarged view of the area enclosed by the dashed line in Figure 3B. As shown in Figure 4, side surface 143 comprises a first side surface 143a, a second side surface 143b, a third side surface 143c, a fourth side surface 143d, and a fifth side surface 143e.

[0020] The first side surface 143a extends from the outer peripheral edge 14f of one main surface 141 of the detection element 14 toward the base member 12. In this embodiment 1, the first side surface 143a extends along the Z direction perpendicular to the one main surface 141, but it is not limited to this and may extend along a direction inclined with respect to the Z direction. The first side surface 143a is an example of a second surface. The Z direction is an example of a perpendicular direction.

[0021] The second side surface 143b extends outward from the first side surface 143a in a top view (viewed in the Z-axis direction) and is oriented in the Z direction. In this embodiment 1, the second side surface 143b extends from the end of the first side surface 143a opposite to the outer peripheral edge 14f in the Z direction. In this embodiment 1, the second side surface 143b extends along a virtual plane (a virtual plane perpendicular to the Z direction) that extends in the X and Y directions, but is not limited to this, and may extend along a direction inclined with respect to the said virtual plane. The second side surface 143b is an example of a third surface.

[0022] The third side surface 143c extends from the second side surface 143b toward the base member 12. In this embodiment 1, the third side surface 143c extends from the outer peripheral edge 14h of the second side surface 143b when viewed from above. In this embodiment 1, the third side surface 143c extends along the Z direction, but is not limited to this, and may extend along a direction inclined with respect to the Z direction. The third side surface 143c is an example of a fourth surface.

[0023] The fourth side surface 143d extends outward from the third side surface 143c in a top view and is oriented in the Z direction. In this embodiment 1, the fourth side surface 143d extends from the end of the third side surface 143c opposite to the outer peripheral edge 14h of the second side surface 143b in the Z direction. In this embodiment 1, the fourth side surface 143d extends along a virtual plane that extends in the X and Y directions, but is not limited to this, and may extend along a direction inclined with respect to the said virtual plane. The fourth side surface 143d is an example of a fifth surface.

[0024] The fifth side surface 143e extends from the fourth side surface 143d toward the base member 12. In this embodiment 1, the fifth side surface 143e extends from the outer peripheral edge 14i of the fourth side surface 143d when viewed from above. In this embodiment 1, the fifth side surface 143e extends along the Z direction, but is not limited to this, and may extend along a direction inclined with respect to the Z direction. The fifth side surface 143e is an example of a sixth surface.

[0025] As the side surface 143 is configured as described above, a step formed by the second side surface 143b is created between the first side surface 143a and the third side surface 143c. Furthermore, a step formed by the fourth side surface 143d is created between the third side surface 143c and the fifth side surface 143e.

[0026] As shown in Figure 2, the detection element 14 is provided on one main surface 141 and has a plurality of connection terminals 14c that are electrically connected to the connection terminal 12b of the base member 12 via bonding wires 20. In this way, the detection element 14 is electrically connected to the circuit element 16 via the base member 12 (and the conductive pattern (not shown) provided on its substrate).

[0027] As shown in Figures 2, 3A, and 3B, the detection element 14 has a detection section 14d on one main surface 141 to which pressure is applied. In this embodiment 1, the detection section 14d of the detection element 14, which is a pressure sensor element, is a membrane or diaphragm that receives pressure.

[0028] For reasons to be explained later, the detection element 14 is provided with a groove 14e in the portion between the multiple connection terminals 14c and the detection unit 14d on one main surface 141, as shown in Figures 2 and 3A.

[0029] The protective film 15 shown in Figures 3A, 3B, and 4 is, for example, a passivation film. The protective film 15 contains, for example, silicon nitride (SiN) and is insulating. The protective film 15 is intended to prevent water, dust, and other contaminants from adhering to the detection element 14, particularly to the detection portion 14d of the detection element 14.

[0030] As shown in Figures 3A, 3B, and 4, the protective film 15 covers the detection unit 14d, one main surface 141, the first side surface 143a, and the second side surface 143b of the detection element 14. In other words, the detection unit 14d, one main surface 141, the first side surface 143a, and the second side surface 143b are waterproofed by the protective film 15.

[0031] In this first embodiment, the circuit element 16 has one main surface 16a and another main surface 16b opposite to the one main surface 16a, as shown in Figure 3B. The circuit element 16 is an element that includes an Application Specific Integrated Circuit (ASIC). In this first embodiment, the circuit element 16 is arranged on the one main surface 12a of the base member 12 with the other main surface 16b.

[0032] As shown in Figure 2, the circuit element 16 is provided on one main surface 16a and has a plurality of connection terminals 16c that are electrically connected to the connection terminals 12c of the base member 12 via bonding wires 22. In this way, the circuit element 16 is electrically connected to the detection element 14 via the base member 12 (and the conductive pattern (not shown) provided on its substrate).

[0033] The circuit element 16 is an element that includes a signal processing circuit that processes the signal output from the detection element 14 and outputs the processed signal to the base member 12. For example, in this embodiment 1, the circuit element 16 includes a converter that converts the voltage signal output from the detection element 14 into a digital signal, a filter that filters the digital signal from the converter, a temperature sensor that detects temperature, a processor that corrects the filtered digital signal based on the temperature detected by the temperature sensor, and a memory that stores correction coefficients used when correcting the digital signal using the detected temperature.

[0034] In this first embodiment, the resin package 18 shown in Figures 1 to 4 is a package manufactured by molding a hard resin, such as a thermosetting resin, onto one main surface 12a of the base member 12. Details of the method for manufacturing the resin package 18 will be described later.

[0035] One main surface 12a of the base member 12, which includes multiple connection terminals 12b and 12c, is protected and waterproofed by being covered by a resin package 18. Furthermore, the detection element 14 (especially the connection terminal 14c), the circuit element 16 (especially the connection terminal 16c), and the bonding wires 20 and 22 electrically connecting them are protected and waterproofed by being embedded within the resin package 18. In other words, the resin package 18 protects the electrical connections between the base member 12 and the detection element 14, and between the base member 12 and the circuit element 16.

[0036] As shown in Figures 1, 3A, and 3B, the resin package 18 is provided with an exposure hole 18a to expose the detection portion 14d of the detection element 14 to the outside of the resin package 18 via the protective film 15, so that pressure acts on the detection portion 14d of the detection element 14 through the protective film 15.

[0037] Specifically, in this embodiment 1, as shown in Figure 1, the resin package 18 comprises a rectangular parallelepiped main body portion 18b provided on the base member 12 and a cylindrical ring holding portion 18c on the main body portion 18b. The exposed hole 18a opens at the top surface 18d of the ring holding portion 18c and extends toward one main surface 12a of the base member 12. Due to this exposed hole 18a, pressure is applied to the detection portion 14d of the detection element 14, which is exposed to the outside of the resin package 18 via the protective film 15, and the semiconductor device 10 can measure this pressure.

[0038] The ring-holding portion 18c of the resin package 18 is for holding an O-ring (not shown) on its outer circumferential surface. For example, the ring-holding portion 18c of the resin package 18 of the semiconductor device 10 is inserted into a through-hole that connects the internal space to the outside, provided in the housing of the electronic device to which the semiconductor device 10 is mounted, with the O-ring interposed between them. In other words, in this embodiment 1, the resin package 18 also functions as a component for mounting the semiconductor device 10 to the electronic device.

[0039] Furthermore, as shown in Figure 2, the resin package 18 is provided such that at least a portion of the outer peripheral edge 14f of one main surface 141 of the detection element 14 is exposed within the exposed hole 18a, and that it has a recess 18e along the exposed outer peripheral edge 14f. In other words, the portion of the resin package 18 present on one main surface 141 of the detection element 14 is kept to a minimum. The reason for providing the resin package 18 in this way will be explained later.

[0040] Specifically, in this embodiment 1, the outer peripheral edge 14f of one main surface 141 of the detection element 14 is rectangular in shape with four sides when viewed from above. One side 14g of the outer peripheral edge 14f along which multiple connection terminals 14c connected to the bonding wire 20 are adjacent is embedded in the resin package 18 together with the connection terminals 14c and the bonding wire 20. On the other hand, the sides of the outer peripheral edge 14f other than side 14g are exposed to the outside of the resin package 18. The resin package 18 is provided with recesses 18e along the sides of the outer peripheral edge 14f other than side 14g.

[0041] The recess 18e has a shape such that its bottom is located on the base member 12 side compared to the main surface 141 of the detection element 14.

[0042] As shown in Figure 4, the depth D of the recess 18e along the Z direction is longer than the length L of the first side surface 143a along the Z direction. In this embodiment 1, the depth D of the recess 18e is, for example, about 10 μm. On the other hand, in this embodiment 1, the length L of the first side surface 143a is 1 μm or more and 10 μm or less. Note that the depth D of the recess 18e may be less than or equal to the length L of the first side surface 143a, and the depth D of the recess 18e and the length L of the first side surface 143a are not limited to the numerical values ​​and numerical ranges described above.

[0043] The reason why the length L of the first side surface 143a is set to 1 μm or more is that during the manufacturing process of the semiconductor device 10, a portion of the first side surface 143a that is not covered by the resin package 18 is generated to a length of approximately 1 μm. Here, the portion of the first side surface 143a that is not covered by the resin package 18 is the portion of the first side surface 143a that is on one side of the main surface 141 in the Z direction, beyond the boundary 14j shown in Figure 4.

[0044] Furthermore, the reason why the length L of the first side surface 143a is set to 10 μm or less is that if the length L is greater than 10 μm, there is a high possibility that the protective film 15 cannot be formed on the entire surface of the first side surface 143a during the manufacturing process of the detection element 14, and there is a high possibility that the third side surface 143c and the fourth side surface 143d cannot be formed by forming the second groove 64 in the second groove formation process described later.

[0045] As shown in Figure 4, when viewed from a direction along one main surface 141, that is, from a direction along the XY plane, the inclination angle θ1 is greater than the inclination angle θ2. The inclination angle θ1 is the angle of the virtual tangent 41 with respect to the first side surface 143a. The virtual tangent 41 is the tangent to the surface of the recess 18e at the boundary 14j between the recess 18e and the protective film 15 covering the first side surface 143a. The inclination angle θ2 is the angle of the virtual line 42 with respect to the first side surface 143a. The virtual line 42 is the line passing through the outer edge 14f, which is the boundary between one main surface 141 and the first side surface 143a, and the outer edge 14h, which is the boundary between the second side surface 143b and the third side surface 143c.

[0046] Furthermore, when viewed from a direction along the XY plane, the inclination angle θ1 is greater than the inclination angle θ3. The inclination angle θ3 is the angle of the imaginary line 43 with respect to the first side surface 143a. The imaginary line 43 is a line that passes through the outer edge 14f, which is the boundary between the main surface 141 and the first side surface 143a, and the outer edge 14i, which is the boundary between the fourth side surface 143d and the fifth side surface 143e.

[0047] In this embodiment 1, the inclination angle θ1 is 35 degrees or more, but it is not limited to this, and the inclination angle θ1 may be less than 35 degrees.

[0048] In Embodiment 1, the direction along the one main surface 141 (the direction along the XY plane) is any direction along the one main surface 141. In other words, the relationship between the magnitudes of the inclination angles θ1, θ2, and θ3 described above holds true regardless of the direction from which the one main surface 141 is viewed. However, the relationship between the magnitudes of the inclination angles θ1, θ2, and θ3 described above may only hold true when viewed from some of the directions along the one main surface 141. Furthermore, the relationship between the magnitudes of the inclination angles θ1, θ2, and θ3 described above does not have to hold true regardless of the direction along the one main surface 141.

[0049] With such a resin package 18, multiple connection terminals 14c and their surrounding portions are embedded within the resin package 18 on one main surface 141 of the detection element 14.

[0050] When the resin package 18 is adjacent to the outer peripheral edge 14f of one main surface 141 (more specifically to the protective film 15 covering the outer peripheral edge 14f), the resin package 18 completely covers the first side surface 143a.

[0051] However, if the resin package 18 is adjacent to the first side surface 143a (more specifically to the protective film 15 covering the first side surface 143a) on the base member 12 side of the outer peripheral edge 14f of one main surface 141, the resin package 18 does not cover at least a portion of the first side surface 143a. In other words, the semiconductor device 10 may be configured such that the resin package 18 does not cover at least a portion of the first side surface 143a. In such a case, the first side surface 143a may be exposed through the exposure hole 18a. However, since the first side surface 143a is covered by the protective film 15, it is protected from the adhesion of water, dust, etc. to the first side surface 143a. In this embodiment 1, the resin package 18 does not cover a portion of the first side surface 143a (more specifically, the portion of the first side surface 143a on the Z-direction side of the boundary 14j towards one main surface 141).

[0052] Furthermore, if the resin package 18 is adjacent to the second side surface 143b (more specifically to the protective film 15 covering the second side surface 143b), the resin package 18 does not cover all of the first side surface 143a and at least part of the second side surface 143b. In other words, the semiconductor device 10 may be configured such that the resin package 18 does not cover all of the first side surface 143a and at least part of the second side surface 143b. In such a case, the first side surface 143a and the second side surface 143b may be exposed through the exposure hole 18a. However, since the first side surface 143a and the second side surface 143b are covered by the protective film 15, they are protected from the adhesion of water, dust, etc. to the first side surface 143a. In this embodiment 1, the resin package 18 covers all of the second side surface 143b.

[0053] From the above, the resin package 18 covers the detection element 14 in the portion excluding the exposed hole 18a. Here, the portion excluding the exposed hole 18a is the one main surface 141 and the detection portion 14d. However, depending on the configuration of the resin package 18, the portion excluding the exposed hole 18a may also include at least one of the first side surface 143a and the second side surface 143b, in addition to the one main surface 141 and the detection portion 14d.

[0054] Next, a method for manufacturing such a semiconductor device 10, particularly a method for manufacturing the detection element 14 and the resin package 18, will be described.

[0055] Figures 5A to 5D each show one step in the manufacturing process of the semiconductor device 10, specifically the fabrication of a detection element. Note that the detection unit 14d is not shown in Figures 5A to 5D.

[0056] First, the substrate 60 (see Figures 5A to 5D) is prepared. The substrate 60 is the base material for the detection element 14, which is a MEMS.

[0057] As shown in Figure 5A, a first groove forming step is performed in which a first groove 62 is formed on the main surface 61 of the substrate 60. As a result, in a plan view of the substrate 60, i.e., a top view (view in the Z-axis direction) of the main surface 61 viewed along a direction perpendicular to the main surface 61, the main surface 61 is divided into a plurality of regions 63 separated by the first groove 62. In this embodiment 1, the main surface 61 is divided into a plurality of regions 63 arranged along the X and Y directions, and each region 63 is rectangular. Note that grooves 14e (see Figures 2 and 3A) may be formed in each region 63 of the main surface 61 of the substrate 60 during the first groove forming step, or between the first groove forming step and the protective film forming step described below.

[0058] Next, as shown in Figure 5B, a protective film formation step is performed in which an insulating protective film 15 is formed on the main surface 61. The main surface 61 also includes the first groove 62 formed in the first groove formation step. As a result, the main surface 61 including the first groove 62 is covered with the protective film 15.

[0059] Next, as shown in Figure 5C, a second groove forming step is performed in which a second groove 64 is formed along the bottom surface 62a of the first groove 62. The width W2 of the bottom surface 64a of the second groove 64 is narrower than the width W1 of the bottom surface 62a of the first groove 62. As a result, a step is formed between the first groove 62 and the second groove 64 due to the difference between the two widths W1 and W2.

[0060] Next, as shown in Figure 5D, a cutting step is performed to cut the substrate 60, which is coated with a protective film 15 along the first groove 62 and the second groove 64. In this embodiment 1, the substrate 60 is cut along the Z direction from the bottom surface 64a of the second groove 64. This divides the substrate 60 into multiple detection elements 14. Also in this embodiment 1, the width of the blade (not shown) used to cut the substrate 60 is narrower than the width W2 of the bottom surface 64a of the second groove 64.

[0061] In each of the multiple detection elements 14 that are divided during the cutting process, the area that was the side surface 64b of the first groove 62 becomes the first side surface 143a. Also, the area that was the bottom surface 64a of the first groove 62 becomes the second side surface 143b. Also, the area that was the side surface 64b of the second groove 64 becomes the third side surface 143c. Also, the area that was the bottom surface 64a of the second groove 64 becomes the fourth side surface 143d. Furthermore, the cut surface when the base material 60 is cut during the cutting process becomes the fifth side surface 143e.

[0062] The fabrication of the substrate 60 and the aforementioned steps are carried out by known microfabrication techniques (e.g., semiconductor integrated circuit fabrication techniques). For example, when the substrate 60 is composed of multiple layers, the first groove 62 and the second groove 64 are formed by etching or the like during the lamination process of each layer of the substrate 60. In this case, the first groove 62 may be formed after the second groove 64 is formed during the lamination process of each layer of the substrate 60.

[0063] Figures 6A to 6D are diagrams showing the steps involved in manufacturing a resin package for a semiconductor device 10.

[0064] As shown in Figure 6A, the detection element 14 and circuit element 16, which were fabricated as described above, are placed on the base member 12. In other words, the detection element 14 and circuit element 16 are mounted on the base member 12.

[0065] Next, the base member 12, with the bonding wires 20 and 22 attached, is positioned in a predetermined location relative to the mold 50. The mold 50 includes a cavity 50a for forming the resin package 18 and a suction hole 50b for sucking air out of the cavity 50a. The cavity 50a is also provided with a protrusion 50c for forming the exposed hole 18a of the resin package 18. The protrusion 50c has a flat top surface 50d.

[0066] Before the resin material of the resin package 18 is filled into the mold 50, the release film 52 adheres to the surface of the cavity 50a by being sucked through the suction hole 50b. The release film 52 is, for example, a resin film coated with a release agent on its surface and having heat resistance.

[0067] As shown in Figure 6B, the mold 50, with the release film 52 in close contact with the surface of the cavity 50a, approaches the base member 12, and the top surface 50d of the protrusion 50c of the mold 50 contacts the detection element 14 on the base member 12 via the release film 52. As a result, the mold 50 is positioned relative to the base member 12 such that one main surface 141 of the detection element 14 is embedded in the portion of the release film 52 on the top surface 50d of the protrusion 50c.

[0068] Figure 7 is a top view of a semiconductor device showing the positional relationship between the mold and the detection element.

[0069] As shown in Figure 7, in this embodiment 1, the top surface 50d of the protrusion 50c of the mold 50 is rectangular and has an outer peripheral edge 50e. Also, as shown in Figure 6B, when the top surface 50d of the protrusion 50c of the mold 50 is in contact with the detection element 14 via the release film 52, at least a portion of the outer peripheral edge 50e of the top surface 50d is located outside the outer peripheral edge 14f of the one main surface 141 when viewed in the opposing direction (view in the Z-axis direction) between the protrusion 50c and the one main surface 141 of the detection element 14.

[0070] In this embodiment 1, as shown in Figure 7, a portion of the outer peripheral edge 50e of the top surface 50d of the protrusion 50c of the mold 50 is located outside the portion of the outer peripheral edge 14f of one main surface 141 of the detection element 14, excluding the side 14g along which the multiple connection terminals 14c are located. That is, the portions near the side 14g and the connection terminals 14c do not face the top surface 50d of the protrusion of the mold 50.

[0071] Due to the positional and size relationship between the top surface 50d of the protrusion 50c of the mold 50 and the one main surface 141 of the detection element 14, as shown in Figure 6B, a wall-like portion 52a of the release film 52 is formed that protrudes toward the base member 12 beyond the one main surface 141 and partially surrounds the outer peripheral edge 14f of the one main surface 141.

[0072] Next, as shown in Figure 6C, molten resin material 54 is filled into the cavity 50a of the mold 50. At this time, the wall-like portion 52a of the release film 52 prevents the resin material 54 from entering between the release film 52 and one main surface 141 of the detection element 14. As a result, the resin material 54 is prevented from covering the detection portion 14d of the detection element 14.

[0073] However, in this embodiment 1, as shown in Figure 8, the wall-like portion 52a of the release film 52 does not exist on the edge 14g of the outer peripheral edge 14f of the one main surface 141 of the detection element 14. Therefore, there is a possibility that the resin material 54 may penetrate between the release film 52 and the one main surface 141 of the detection element 14 near the edge 14g.

[0074] Therefore, in this embodiment 1, a groove 14e is provided in the portion between the multiple connection terminals 14c and the detection unit 14d on one main surface 141 of the detection element 14. When resin material 54 enters between the release film 52 and one main surface 141 of the detection element 14 from the side 14g, the entered resin material 54 flows into the groove 14e before reaching the detection unit 14d. As a result, the entered resin material 54 is prevented from reaching the detection unit 14d of the detection element 14 and at least partially covering the detection unit 14d.

[0075] Furthermore, if the distance between the multiple connection terminals 14c and the detection unit 14d is sufficiently long, that is, if the distance is such that the entering resin material 54 cannot reach the detection unit 14d, the groove 14e may be omitted.

[0076] As shown in Figure 6C, the mold 50 cavity 50a is filled with resin material 54, and then, once the resin material 54 hardens, the mold 50 and the release film 52 are separated from the hardened resin material 54, as shown in Figure 6D. As a result, a resin package 18 is fabricated on the base member 12 that has a shape corresponding to the wall-like portion 52a of the release film 52 shown in Figure 6C and has a recess 18e that partially follows the outer peripheral edge 14f of one main surface 141 of the detection element 14.

[0077] According to this embodiment 1 described above, in a semiconductor device 10 having a detection element 14 equipped with a detection unit 14d and a resin package 18 equipped with an exposure hole 18a that exposes the detection unit 14d to the outside, it is possible to suppress the deterioration of the detection performance of the detection element 14 due to the resin package 18.

[0078] Specifically, as shown in Figure 2, the resin package 18 is formed such that at least a portion of the outer peripheral edge 14f of one main surface 141 of the detection element 14 is exposed within the exposure hole 18a, and has a recess 18e along the exposed outer peripheral edge 14f. As a result, during the fabrication of the semiconductor device 10, the resin material 54 of the resin package 18 is prevented from covering the detection portion 14d of the detection element 14. Consequently, the degradation of the detection performance of the detection element 14 due to the resin package 18 is suppressed.

[0079] Furthermore, this minimizes the portion of the resin package 18 present on one main surface 141 of the detection element 14, thereby suppressing a decrease in the detection performance of the detection element 14.

[0080] In other words, during use, the semiconductor device 10 may be subjected to external forces on its resin package 18. For example, in this embodiment 1, the resin package 18 receives a compressive force from the O-ring held by its ring holding portion 18c. This external force acts on the detection element 14 via the resin package 18. In particular, if a part of the resin package 18 is located on one main surface 141 of the detection element 14, strain may occur on the one main surface 141 via the resin package 18. As a result, the detection portion 14d provided on that one main surface 141 may deform, and the detection performance of the detection element 14 may decrease.

[0081] Therefore, by providing the resin package 18 such that at least a portion of the outer peripheral edge 14f of one main surface 141 of the detection element 14 is exposed within the exposed hole 18a, and that it has a recess 18e along the exposed outer peripheral edge 14f, strain on one main surface 141 of the detection element 14 is suppressed (compared to the case where the entire outer peripheral edge 14f is embedded in the resin package 18 and there is no recess 18e in the resin package 18). As a result, the deterioration of the detection performance of the detection element 14 due to the resin package 18 is suppressed.

[0082] In this embodiment 1, the recess 18e is formed along the outer peripheral edge 14f. Therefore, the first side surface 143a, which is close to the outer peripheral edge 14f, is more likely to be exposed without being covered by the resin package 18 due to the recess 18e, compared to the second side surface 143b and the third side surface 143c. According to this embodiment 1, the protective film 15 covers the first side surface 143a in addition to the main surface 141. In other words, in this embodiment 1, the first side surface 143a, which is more likely to be exposed, is covered by the protective film 15. This reduces the possibility of the first side surface 143a coming into contact with water. As a result, a decrease in the waterproof performance of the detection element 14 can be suppressed.

[0083] According to this embodiment 1, the protective film 15 covers not only the main surface 141 and the first side surface 143a but also the second side surface 143b. This reduces the possibility of the second side surface 143b coming into contact with water. As a result, compared to a configuration in which the second side surface 143b is not covered by the protective film 15, the deterioration of the waterproof performance of the detection element 14 can be suppressed.

[0084] If the length L of the first side surface 143a along the Z direction is too long, there is a risk that the protective film 15 cannot be formed over the entire surface of the first side surface 143a during the manufacturing process of the semiconductor device 10. According to this embodiment 1, the length L of the first side surface 143a along the Z direction is shorter than the depth D of the recess 18e along the Z direction. Therefore, compared to a configuration in which the length L is greater than or equal to the depth D, the possibility of not being able to form the protective film 15 over the entire surface of the first side surface 143a can be reduced.

[0085] According to this embodiment 1, the inclination angle θ1 is greater than the inclination angle θ2. Therefore, the surface of the resin package 18 that forms the recess 18e, which covers the first side surface 143a, the second side surface 143b, and the third side surface 143c, extends away from the first side surface 143a, the second side surface 143b, and the third side surface 143c as it approaches the base member 12. Therefore, the possibility of the first side surface 143a, the second side surface 143b, and the third side surface 143c being exposed through the surface of the resin package 18 that forms the recess 18e (the surface of the resin package 18) can be reduced.

[0086] According to this embodiment 1, when a substrate 60 on which a protective film 15 is formed is cut to produce multiple detection elements 14, each with a protective film 15 formed on it, the cutting starts at the fourth side surface 143d and the fifth side surface 143e becomes the cut surface. Therefore, even if a chip occurs in the detection element 14 on the fourth side surface 143d or the fifth side surface 143e, the impact of the chip on the first side surface 143a can be reduced. As a result, the possibility of the protective film 15 formed on the first side surface 143a being damaged during the cutting process can be reduced.

[0087] According to this embodiment 1, the inclination angle θ1 is greater than the inclination angle θ3. Therefore, the surface of the resin package 18 that forms the recess 18e, which covers the fourth side surface 143d and the fifth side surface 143e, extends away from the fourth side surface 143d and the fifth side surface 143e as it approaches the base member 12. Therefore, the possibility of the fourth side surface 143d and the fifth side surface 143e being exposed through the surface of the resin package 18 that forms the recess 18e (the surface of the resin package 18) can be reduced.

[0088] According to this manufacturing method, when the substrate 60 is cut and divided into a plurality of detection elements 14, the side surface of the first groove 62 covered with the protective film 15 becomes the first side surface 143a, and the bottom surface of the first groove 62 covered with the protective film 15 becomes the second side surface 143b. In this way, a semiconductor device 10 having a detection element 14 in which the first side surface 143a and the second side surface 143b are covered with the protective film 15 in addition to the main surface 141 can be easily manufactured.

[0089] According to this manufacturing method, even if chipping occurs in the base material 60 when it is cut along the second groove 64, the likelihood of the chipping affecting the first groove 62, which is different from the second groove 64, is low. Therefore, the likelihood of the protective film covering the first groove 62 being damaged by the chipping can be reduced.

[0090] (Embodiment 2) In the first embodiment described above, as shown in Figure 2, a portion (side 14g) of the outer peripheral edge 14f of one main surface 141 of the detection element 14 is embedded within the resin package 18. Therefore, the recess 18e of the resin package 18 is not provided along the entire circumference of the outer peripheral edge 14f of one main surface 141 of the detection element 14. In contrast, in the second embodiment, the recess of the resin package is provided along the entire circumference of the outer peripheral edge of the first surface of the detection element. The semiconductor device according to the second embodiment will be described focusing on this difference.

[0091] Figure 9 is a top view of the semiconductor device according to this second embodiment. Figures 10A and 10B are cross-sectional views of the semiconductor device according to this second embodiment, and are cross-sectional views along lines CC and DD in Figure 9.

[0092] As shown in Figures 9, 10A, and 10B, in the semiconductor device 110 according to this second embodiment, the detection element 114 has a plurality of connection terminals 114c provided on a second surface 1142 opposite to the first surface 1141 on which the detection unit 114d is provided. The detection element 114 also has a side surface 1143. The side surface 1143 corresponds to the side surface 143 of the detection element 14 in Embodiment 1.

[0093] The detection element 114 is positioned on the base member 112 with its second surface 1142 facing the base member 112. Multiple connection terminals 114c on the second surface 1142 are electrically connected to the base member 112 (and the conductor pattern on its first surface 112a) via solder 120.

[0094] With such a detection element 114, since no connection terminals are provided on the first surface 1141, the resin package 118 does not need to cover the first surface 1141 of the detection element 114. Therefore, as shown in Figure 9, the resin package 118 is formed such that the entire outer peripheral edge 114f of the first surface 1141 of the detection element 114 is exposed within the exposure hole 118a, and has an annular recess 118e along the exposed outer peripheral edge 114f.

[0095] In this second embodiment, the circuit element 116 also has a plurality of connection terminals 116c on the second surface 116b facing the base member 112. These plurality of connection terminals 116c are electrically connected to the base member 112 via solder 122.

[0096] This second embodiment, like the first embodiment described above, is a semiconductor device 110 having a detection element 114 equipped with a detection unit 114d and a resin package 118 equipped with an exposure hole 118a that exposes the detection unit 114d to the outside, and it is possible to suppress the deterioration of the detection performance of the detection element 114 due to the resin package 118.

[0097] Although the present invention has been described with reference to several embodiments, the embodiments of the present invention are not limited to these.

[0098] For example, in the first embodiment described above, as shown in Figures 2 and 3B, the detection element 14 and the circuit element 16 are mounted on the base member 12 in an adjacent configuration. However, the embodiments of the present invention are not limited to this.

[0099] For example, a circuit element may be mounted on a base member, and a detection element may be mounted on the circuit element. That is, the detection element is provided indirectly on the base member via the circuit element. In this case, for example, the detection element may be electrically connected to the circuit element via bonding wires or solder.

[0100] Alternatively, the detection element and the circuit element may be integrated. For example, the circuit within the circuit element may be incorporated into the detection element.

[0101] Furthermore, in the first embodiment described above, the semiconductor device 10 is a so-called pressure sensor that measures pressure. However, the embodiments of the present invention are not limited to this. For example, a semiconductor device according to an embodiment of the present invention may be a sensor that detects (measures) light, ultrasound, a specific gas, etc., or it may be a microphone. That is, a semiconductor device according to an embodiment of the present invention is equipped with a detection element that allows the detection unit to detect an object by exposing the detection unit to the outside of the semiconductor device. For example, if the semiconductor device is a light sensor that detects light, it is equipped with a photodiode as the detection element. Also, for example, if the semiconductor device is an ultrasonic sensor that detects ultrasound, it is equipped with an ultrasonic transducer as the detection element.

[0102] The semiconductor device described above can also be expressed as follows.

[0103] The semiconductor device of the first embodiment is Base member and A detection element provided on the base member and having a first surface on which a detection unit is arranged, An insulating protective film covering the detection unit and the first surface, The resin package is provided on the base member and has an exposure hole that exposes the detection portion of the detection element to the outside via the protective film, and covers the detection element in the portion excluding the exposure hole, At least a portion of the outer edge of the first surface is exposed within the exposure hole, The resin package has a recess along the portion of the outer edge that is exposed within the exposed hole, The aforementioned detection device is A second surface extending from the outer peripheral edge toward the base member, A third surface extending outward from the second surface when viewed from a direction perpendicular to the first surface, The present invention further comprises a fourth surface extending from the third surface toward the base member, The protective film covers the detection unit and the first surface, as well as the second surface.

[0104] The semiconductor device of the second embodiment is In a semiconductor device according to the first embodiment, The protective film may further cover the third surface.

[0105] The semiconductor device of the third embodiment is In a semiconductor device according to the first or second embodiment, The length of the second surface along the orthogonal direction may be shorter than the depth of the recess along the orthogonal direction.

[0106] The semiconductor device of the fourth embodiment is In any one of the semiconductor devices according to the first to third embodiments, Viewed from a direction along the first surface, the inclination angle of the virtual tangent to the surface of the recess at the boundary between the recess and the protective film covering the second surface with respect to the second surface may be greater than the inclination angle of the virtual line passing through the boundary between the first and second surfaces and the boundary between the third and fourth surfaces with respect to the second surface.

[0107] The semiconductor device of the fifth embodiment is In any one of the first to fourth embodiments of the semiconductor device, The aforementioned detection device is A fifth surface extending outward from the fourth surface when viewed from the aforementioned orthogonal direction, The material may further include a sixth surface extending from the fifth surface toward the base member.

[0108] The semiconductor device of the sixth embodiment is In a semiconductor device according to the fifth embodiment, Viewed from a direction along the first surface, the inclination angle of the virtual tangent to the surface of the recess at the boundary between the recess and the protective film covering the second surface with respect to the second surface may be greater than the inclination angle of the virtual line passing through the boundary between the first and second surfaces and the boundary between the fifth and sixth surfaces with respect to the second surface.

[0109] The method for manufacturing a semiconductor device according to the seventh embodiment is: A method for manufacturing a semiconductor device, comprising a base member on which a detection element having a first surface on which a detection unit is arranged is provided, and a resin package having an exposure hole for exposing the detection unit of the detection element to the outside, A first groove is formed on the main surface of the substrate so as to divide the main surface into multiple regions. The main surface including the first groove is covered with an insulating protective film. The substrate coated with the protective film along the first groove is cut to divide the substrate into a plurality of detection elements. The detection element is placed on the base member, A release film is applied to a mold having a cavity with a protrusion, The mold is positioned relative to the base member such that the first surface of the detection element is embedded in the portion of the release film on the top surface of the protrusion. The molten resin material is filled into the cavity of the mold. The mold and the release film are separated from the resin package, which is a cured resin material. In a view from the opposite direction between the protrusion of the mold and the first surface of the detection element, at least a portion of the outer peripheral edge of the top surface of the protrusion is located outside the outer peripheral edge of the first surface.

[0110] The method for manufacturing a semiconductor device according to the eighth aspect is: In the seventh embodiment of the method for manufacturing a semiconductor device, After the protective film has been applied and before the substrate has been cut, a second groove narrower than the bottom surface may be formed along the bottom surface of the first groove. The substrate coated with the protective film along the first groove and the second groove may be cut to divide the substrate into a plurality of detection elements.

[0111] Furthermore, by appropriately combining any of the above-mentioned various embodiments and modifications, the effects of each can be achieved.

[0112] Although the present invention has been fully described in relation to preferred embodiments with reference to the drawings as appropriate, various modifications and alterations will be obvious to those skilled in the art. Such modifications and alterations should be understood to be included within the scope of the invention as defined in the appended claims, as long as they do not fall outside that scope. [Industrial applicability]

[0113] The present invention is applicable to a semiconductor device comprising a detection element with a detection unit and a resin package that exposes the detection unit to the outside. [Explanation of Symbols]

[0114] 10 Semiconductor Devices 12 Base member 14 detection elements 141 One main surface (first surface) 143a First side (second side) 143b Second side (third side) 143c Third side (fourth side) 143d Fourth side (fifth side) 143e Fifth side (sixth side) 14d Detection unit 14f Outer edge (boundary) 14h Outer edge (boundary) 14i Outer edge (boundary) 14j boundary 15 Protective film 18 resin packages 18a exposed hole 18e recess 41 Virtual tangent 42 virtual lines 43 Virtual lines 50 molds 50a Cavity 50c convex part 50d top surface 52 Release film 54 Resin materials 60 Base material 61 Main surface 62 First groove 62a Bottom 63 areas 64 The second groove D Depth L Length θ1 Tilt angle θ2 Tilt angle θ3 Tilt angle

Claims

1. Base member and A detection element provided on the base member and having a first surface on which a detection unit is arranged, An insulating protective film covering the detection unit and the first surface, The resin package is provided on the base member and has an exposure hole that exposes the detection portion of the detection element to the outside via the protective film, and covers the detection element in the portion excluding the exposure hole, At least a portion of the outer edge of the first surface is exposed within the exposure hole, The resin package has a recess along the portion of the outer edge that is exposed within the exposed hole, The aforementioned detection device is A second surface extending from the outer peripheral edge toward the base member, A third surface extending outward from the second surface when viewed from a direction perpendicular to the first surface, The present invention further comprises a fourth surface extending from the third surface toward the base member, The protective film covers the detection unit and the first surface, as well as the second surface, in the semiconductor device.

2. The semiconductor device according to claim 1, wherein the protective film further covers the third surface.

3. The semiconductor device according to claim 1, wherein the length of the second surface along the orthogonal direction is shorter than the depth of the recess along the orthogonal direction.

4. The semiconductor device according to claim 1, wherein, when viewed from a direction along the first surface, the inclination angle of the virtual tangent to the surface of the recess at the boundary between the recess and the protective film covering the second surface with respect to the second surface is greater than the inclination angle of the virtual line passing through the boundary between the first and second surfaces and the boundary between the third and fourth surfaces with respect to the second surface.

5. The aforementioned detection device is A fifth surface extending outward from the fourth surface when viewed from the aforementioned orthogonal direction, A semiconductor device according to any one of claims 1 to 4, further comprising: a sixth surface extending from the fifth surface toward the base member.

6. The semiconductor device according to claim 5, wherein, when viewed from a direction along the first surface, the inclination angle of the virtual tangent to the surface of the recess at the boundary between the recess and the protective film covering the second surface with respect to the second surface is greater than the inclination angle of the virtual line passing through the boundary between the first surface and the second surface and the boundary between the fifth surface and the sixth surface with respect to the second surface.

7. A method for manufacturing a semiconductor device, comprising a resin package provided on a base member on which a detection element having a first surface on which a detection unit is arranged is provided, the resin package having an exposure hole for exposing the detection unit of the detection element to the outside, A first groove is formed on the main surface of the substrate so as to divide the main surface into multiple regions. The main surface including the first groove is covered with an insulating protective film. The substrate coated with the protective film along the first groove is cut to divide the substrate into a plurality of detection elements. The detection element is placed on the base member, A release film is applied to a mold having a cavity with a protrusion, The mold is positioned relative to the base member such that the first surface of the detection element is embedded in the portion of the release film on the top surface of the protrusion. The molten resin material is filled into the cavity of the mold. The mold and the release film are separated from the resin package, which is a cured resin material. A method for manufacturing a semiconductor device, wherein, when viewed in a direction opposite to the protrusion of the mold and the first surface of the detection element, at least a portion of the outer peripheral edge of the top surface of the protrusion is located outside the outer peripheral edge of the first surface.

8. After the protective film has been applied and before the substrate has been cut, a second groove narrower than the bottom surface is formed along the bottom surface of the first groove. A method for manufacturing a semiconductor device according to claim 7, comprising cutting the substrate, which is coated with the protective film along the first groove and the second groove, to divide the substrate into a plurality of detection elements.

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