Peeling method, peeling apparatus, and peeling system

Abstract

This technology provides a way to streamline the peeling process. [Solution] A peeling method according to one aspect of the present disclosure includes a holding step and a peeling step. The holding step involves holding a polymerized substrate in which a first substrate and a second substrate are joined by siloxane bonds. The peeling step involves peeling the first substrate from the polymerized substrate, starting from the side surface of the polymerized substrate. The peeling step also includes a step of bringing a water-containing fluid into contact with the side surface to react the siloxane bonds with water molecules and break the siloxane bonds.

Description

Technical Field

[0001] The present disclosure relates to a peeling method, a peeling device, and a peeling system.

Background Art

[0002] In recent years, for example, in the manufacturing process of semiconductor devices, the diameter of semiconductor substrates such as silicon wafers and compound semiconductor wafers has been increasing and the thickness has been decreasing. A large-diameter and thin semiconductor substrate may be warped or cracked during transportation or polishing. Therefore, after a support substrate is bonded to the semiconductor substrate for reinforcement, transportation and polishing are performed, and then the support substrate is peeled off from the semiconductor substrate (see Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of improving the efficiency of peeling.

Means for Solving the Problems

[0005] A peeling method according to an aspect of the present disclosure includes a holding step and a peeling step. The holding step holds a polymerized substrate in which a first substrate and a second substrate are joined by a siloxane bond. The peeling step peels the first substrate from the polymerized substrate starting from a side surface of the polymerized substrate. The peeling step includes a step of bringing a fluid containing water into contact with the side surface to react the siloxane bond with water molecules to break the siloxane bond.

Effects of the Invention

[0006] According to this disclosure, the peeling process can be made more efficient. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic plan view showing the configuration of the peeling system according to the embodiment. [Figure 2] Figure 2 is a schematic side view of the polymerization substrate according to the embodiment. [Figure 3] Figure 3 is a schematic side view showing the configuration of a peeling apparatus according to an embodiment. [Figure 4] Figure 4 is a schematic plan view of the first holding part according to the embodiment. [Figure 5] Figure 5 is a flowchart showing the processing procedure of the peeling process performed by the peeling apparatus according to the embodiment. [Figure 6] Figure 6 is an enlarged side view showing one step of the peeling process according to the embodiment. [Figure 7] Figure 7 is an enlarged side view showing one step of the peeling process according to the embodiment. [Figure 8] Figure 8 is a diagram illustrating the change in the state of the joint during the peeling process according to the embodiment. [Figure 9] Figure 9 shows the difference in bonding strength when moisture is supplied to the polymerized substrate during the peeling process and when moisture is not supplied. [Figure 10] Figure 10 is an enlarged side view showing one step of the peeling process according to the embodiment. [Figure 11] Figure 11 is an enlarged side view showing one step of the peeling process according to the embodiment. [Figure 12] Figure 12 is an enlarged side view showing one step of the peeling process according to modified example 1 of the embodiment. [Figure 13] Figure 13 is a schematic plan view showing one step of the peeling process according to a modified example 1 of the embodiment. [Figure 14] Figure 14 is a schematic side view showing the configuration of a peeling device according to a modified example 2 of the embodiment. [Modes for carrying out the invention]

[0008] Hereinafter, referring to the accompanying drawings, embodiments of the peeling method, peeling device, and peeling system disclosed in the present application will be described in detail. Note that the present disclosure is not limited by the embodiments shown below. Also, the drawings are schematic, and it should be noted that the dimensional relationships between elements, the ratios of each element, etc. may be different from reality. Furthermore, there may be portions where the dimensional relationships and ratios between the drawings are different from each other.

[0009] In recent years, for example, in the manufacturing process of semiconductor devices, the large diameter and thinning of semiconductor substrates such as silicon wafers and compound semiconductor wafers have been progressing. A large-diameter and thin semiconductor substrate may warp or crack during transportation or polishing. Therefore, after bonding a support substrate to the semiconductor substrate for reinforcement, transportation and polishing are performed, and then the support substrate is peeled from the semiconductor substrate.

[0010] In recent years, in addition to polymer substrates in which substrates are bonded with an adhesive, polymer substrates in which substrates are joined by van der Waals forces and hydrogen bonds (i.e., intermolecular forces) are widely used. On the other hand, there has been room for further improvement in the technology for efficiently peeling one substrate from such polymer substrates with high bonding strength.

[0011] Therefore, it is expected to realize a technology that can overcome the above problems and improve the efficiency of the peeling process.

[0012] <Configuration of the peeling system> First, the configuration of the peeling system 1 according to the embodiment will be described while referring to FIGS. 1 and 2. FIG. 1 is a schematic plan view showing the configuration of the peeling system 1 according to the embodiment. Also, FIG. 2 is a schematic side view of the polymer substrate T according to the embodiment.

[0013] In the following, in order to clarify the positional relationship, an X-axis direction, a Y-axis direction, and a Z-axis direction that are perpendicular to each other are defined, and the positive Z-axis direction is the vertically upward direction.

[0014] The peeling system 1 shown in FIG. 1 peels the first substrate W1 from the polymer substrate T in which the first substrate W1 and the second substrate W2 shown in FIG. 2 are joined by intermolecular forces. Hereinafter, the first substrate W1 will be referred to as the "upper wafer W1", and the second substrate W2 will be referred to as the "lower wafer W2". That is, the upper wafer W1 is an example of the first substrate, and the lower wafer W2 is an example of the second substrate.

[0015] Further, hereinafter, as shown in FIG. 2, among the plate surfaces of the upper wafer W1, the plate surface on the side joined to the lower wafer W2 will be referred to as the "joining surface W1j", and the plate surface on the side opposite to the joining surface W1j will be referred to as the "non-joining surface W1n". Also, among the plate surfaces of the lower wafer W2, the plate surface on the side joined to the upper wafer W1 will be referred to as the "joining surface W2j", and the plate surface on the side opposite to the joining surface W2j will be referred to as the "non-joining surface W2n".

[0016] The first substrate W1 is a substrate on which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. Also, the second substrate W2 is, for example, a bare wafer on which no electronic circuit is formed. The first substrate W1 and the second substrate W2 have substantially the same diameter. Note that an electronic circuit may be formed on the second substrate W2.

[0017] As shown in FIG. 1, the peeling system 1 includes two processing blocks, a first processing block 10 and a second processing block 20. The first processing block 10 and the second processing block 20 are arranged adjacent to each other.

[0018] In the first processing block 10, loading of the polymer substrate T, peeling treatment of the polymer substrate T, cleaning of the peeled lower wafer W2, and unloading are performed. Such a first processing block 10 includes a loading / unloading station 11, a first transfer region 12, a standby station 13, a peeling station 14, and a first cleaning station 15.

[0019] The loading / unloading station 11, the standby station 13, the stripping station 14, and the first washing station 15 are arranged adjacent to the first transport area 12. Specifically, the loading / unloading station 11 and the standby station 13 are arranged side by side on the negative Y-axis side of the first transport area 12, while the stripping station 14 and the first washing station 15 are arranged side by side on the positive Y-axis side of the first transport area 12.

[0020] The loading / unloading station 11 is equipped with multiple cassette mounting tables, and each cassette mounting table is equipped with a cassette Ct containing the polymerized substrate T and a cassette C2 containing the peeled lower wafer W2.

[0021] A first transport device 121 is positioned in the first transport area 12 for transporting the polymerized substrate T or the lower wafer W2 after peeling. The first transport device 121 includes a transport arm that can move horizontally, move vertically up and down, and rotate about the vertical, and a substrate holding part attached to the tip of the transport arm.

[0022] In the first transport area 12, the first transport device 121 performs processes such as transporting the polymerized substrate T to the waiting station 13 and the peeling station 14, and transporting the peeled lower wafer W2 to the first washing station 15 and the loading / unloading station 11.

[0023] At the waiting station 13, a waiting process is performed as needed to temporarily hold the polymerized substrates T awaiting processing. The waiting station 13 is equipped with a platform on which the polymerized substrates T transported by the first transport device 121 are placed.

[0024] A peeling device 5 (see Figure 3) is located at the peeling station 14, and this peeling device 5 performs a peeling process to separate the upper wafer W1 from the polymerized substrate T. The specific configuration and operation of the peeling device 5 will be described later.

[0025] At the first cleaning station 15, the lower wafer W2 after delamination is cleaned. The first cleaning station 15 is equipped with a first cleaning apparatus for cleaning the upper wafer W1 after delamination. As the first cleaning apparatus, for example, the cleaning apparatus described in Japanese Patent Application Publication No. 2013-033925 can be used.

[0026] Furthermore, the second processing block 20 performs tasks such as cleaning and unloading the upper wafer W1 after delamination. This second processing block 20 includes a transfer station 21, a second cleaning station 22, a second transport area 23, and an unloading station 24. The second cleaning station 22 is an example of a cleaning device.

[0027] The transfer station 21, the second washing station 22, and the unloading station 24 are arranged adjacent to the second transport area 23. Specifically, the transfer station 21 and the second washing station 22 are arranged side by side on the positive Y-axis side of the second transport area 23, and the unloading station 24 is arranged side by side on the negative Y-axis side of the second transport area 23.

[0028] The transfer station 21 is located adjacent to the peeling station 14 of the first processing block 10. At the transfer station 21, a transfer process is performed in which the peeled upper wafer W1 is received from the peeling station 14 and passed on to the second cleaning station 22.

[0029] A second transport device 211 is positioned at the transfer station 21. The second transport device 211 has a non-contact holding part, such as a Bernoulli chuck, and the peeled upper wafer W1 is transported non-contact by this second transport device 211.

[0030] At the second cleaning station 22, a second cleaning process is performed to clean the upper wafer W1 after delamination. A second cleaning apparatus for cleaning the upper wafer W1 after delamination is arranged at the second cleaning station 22. As the second cleaning apparatus, for example, the cleaning apparatus described in Japanese Patent Application Publication No. 2013-033925 can be used.

[0031] A third transport device 231 is positioned in the second transport area 23 to transport the upper wafer W1 after delamination. The third transport device 231 comprises a transport arm capable of moving horizontally, moving vertically, and rotating about the vertical, and a substrate holding part attached to the tip of the transport arm. In the second transport area 23, the third transport device 231 transports the upper wafer W1 after delamination to the discharge station 24.

[0032] The unloading station 24 is equipped with multiple cassette mounting tables, and each cassette mounting table is equipped with a cassette C1 containing the peeled upper wafer W1.

[0033] Furthermore, the peeling system 1 includes a control device 30. The control device 30 controls the operation of the peeling system 1. This control device 30 is, for example, a computer and includes a control unit 31 and a storage unit 32. The storage unit 32 stores programs that control various processes such as bonding. The control unit 31 controls the operation of the peeling system 1 by reading and executing the programs stored in the storage unit 32.

[0034] Such a program may have been recorded on a computer-readable recording medium and installed from that recording medium into the storage unit 32 of the control device 30. Examples of computer-readable recording media include hard disks (HDs), flexible disks (FDs), compact discs (CDs), magnetic optical discs (MOs), and memory cards.

[0035] In the peeling system 1 configured as described above, first, the first transport device 121 of the first processing block 10 takes out the polymerized substrate T from the cassette Ct placed on the loading / unloading station 11, and transports the taken polymerized substrate T to the waiting station 13.

[0036] For example, if a polymer substrate T is waiting to be processed due to differences in processing times between devices, the polymer substrate T can be temporarily placed in a waiting area at the waiting station 13, thereby reducing the time lost between processes.

[0037] Next, the polymerized substrate T is removed from the waiting station 13 by the first transport device 121 and transported to the peeling station 14. Then, the peeling device 5 located in the peeling station 14 performs a peeling process on the polymerized substrate T. Through this peeling process, the polymerized substrate T is separated into an upper wafer W1 and a lower wafer W2.

[0038] After delamination, the lower wafer W2 is removed from the delamination station 14 by the first transport device 121 and transported to the first cleaning station 15. At the first cleaning station 15, the first cleaning device performs a first cleaning process on the delaminated lower wafer W2. This first cleaning process cleans the bonding surface W2j of the lower wafer W2.

[0039] After the first cleaning process, the lower wafer W2 is removed from the first cleaning station 15 by the first transport device 121 and placed in a cassette C2 on the loading / unloading station 11. Subsequently, the cassette C2 is removed from the loading / unloading station 11 and collected. In this way, the processing of the lower wafer W2 is completed.

[0040] Meanwhile, in the second processing block 20, processing is performed on the upper wafer W1 after peeling, in parallel with the processing in the first processing block 10 described above.

[0041] In the second processing block 20, first, the second transport device 211 located at the transfer station 21 removes the peeled upper wafer W1 from the peeling station 14 and transports it to the second washing station 22.

[0042] At this point, the upper wafer W1 after delamination is held by the delamination device 5 with its upper surface, i.e., the non-bonding surface W1n side, and the second transport device 211 holds the bonding surface W1j side of the upper wafer W1 from below without contact. Subsequently, the second transport device 211 inverts the held upper wafer W1 and places it on the second cleaning device of the second cleaning station 22.

[0043] As a result, the upper wafer W1 is placed on the second cleaning device with the bonding surface W1j facing upwards. The second cleaning device then performs a second cleaning process to clean the bonding surface W1j of the upper wafer W1. This second cleaning process cleans the bonding surface W1j of the upper wafer W1.

[0044] After the second cleaning process, the upper wafer W1 is removed from the second cleaning station 22 by the third transport device 231 located in the second transport area 23 and placed in a cassette C1 on the discharge station 24. Subsequently, the cassette C1 is removed from the discharge station 24 and collected. Thus, the processing of the upper wafer W1 is also completed.

[0045] Thus, the peeling system 1 according to the embodiment is configured to include a front end for the polymerized substrate T and the lower wafer W2 after peeling, and a front end for the upper wafer W1 after peeling.

[0046] Here, the front end for the polymerized substrate T and the lower wafer W2 after delamination refers to the loading / unloading station 11 and the first transport device 121, while the front end for the upper wafer W1 after delamination refers to the loading / unloading station 24 and the third transport device 231.

[0047] This makes it possible to perform the process of transporting the upper wafer W1 to the loading / unloading station 11 and the process of transporting the lower wafer W2 to the unloading station 24 in parallel, thereby enabling efficient processing of the entire substrate operation.

[0048] Furthermore, in the peeling system 1 according to this embodiment, the peeling station 14 and the second cleaning station 22 are connected via the transfer station 21. This makes it possible to directly transport the peeled upper wafer W1 from the peeling station 14 to the second cleaning station 22 without passing through the first transport area 12 or the second transport area 23, thus enabling smooth transport of the peeled upper wafer W1.

[0049] <Configuration of the peeling device> Next, the configuration of the peeling device 5 installed in the peeling station 14 will be described with reference to Figure 3. Figure 3 is a schematic side view showing the configuration of the peeling device 5 according to the embodiment.

[0050] As shown in Figure 3, the peeling device 5 includes a processing chamber 100. An inlet / outlet (not shown) is provided on the side of the processing chamber 100. The inlet / outlet is provided on the side of the first transport area 12 (see Figure 1) and the side of the transfer station 21 (see Figure 1), respectively.

[0051] The peeling device 5 comprises a first holding unit 50, a moving unit 60, a second holding unit 70, a peeling induction unit 80, and a fluid supply unit 90, all of which are located inside the processing chamber 100.

[0052] The peeling device 5 holds the upper wafer W1 side of the polymerization substrate T from above by adsorption using the first holding unit 50, and holds the lower wafer W2 side of the polymerization substrate T from below by adsorption using the second holding unit 70. The peeling device 5 then moves the upper wafer W1 away from the surface of the lower wafer W2 using the moving unit 60.

[0053] As a result, the upper wafer W1 held in the first holding section is continuously separated from the lower wafer W2 from one end to the other. Each component will be described in detail below.

[0054] The first holding portion 50 comprises an elastic member 51 and a plurality of suction portions 52. The elastic member 51 is a thin plate-shaped member, formed of a metal such as sheet metal. This elastic member 51 is positioned above the upper wafer W1 and facing the upper wafer W1.

[0055] Multiple suction parts 52 are provided on the surface of the elastic member 51 facing the upper wafer W1. Each suction part 52 comprises a main body 521 fixed to the elastic member 51 and a suction pad 522 provided at the lower part of the main body 521.

[0056] Each suction unit 52 is connected to an intake device 524, such as a vacuum pump, via an intake pipe 523. The first holding unit 50 uses the suction force generated by the intake device 524 to attract the non-bonding surface W1n (see Figure 2) of the upper wafer W1 with the multiple suction units 52. As a result, the upper wafer W1 is attracted and held by the first holding unit 50.

[0057] Furthermore, it is preferable that the suction pad 522 provided in the suction unit 52 be of a type that deforms little. This is because if the suction pad 522 deforms significantly when the moving unit 60, which will be described later, pulls the first holding unit 50, the portion of the upper wafer W1 that is being suctioned will deform significantly as a result of this deformation, and there is a risk that the upper wafer W1 or the lower wafer W2 may be damaged.

[0058] Specifically, it is preferable to use, for example, a suction pad 522 that has ribs on its suction surface or a flat pad with a space height of 0.5 mm or less.

[0059] Here, the configuration of the first holding part 50 will be described in more detail with reference to Figure 4. Figure 4 is a schematic plan view of the first holding part 50 according to the embodiment.

[0060] As shown in Figure 4, the multiple suction parts 52 of the first holding part 50 are arranged in an annular pattern on the elastic member 51, facing the outer periphery of the upper wafer W1 and adsorbing the outer periphery of the upper wafer W1. Here, an example is shown in which eight suction parts 52 are provided on the elastic member 51, but the number of suction parts 52 provided on the elastic member 51 is not limited to eight.

[0061] Of these multiple adsorption portions 52, the adsorption portion 52 located at the starting point of the peeling process (in this case, the negative X-axis direction) is positioned close to the area where the blade portion 81 (see Figure 3) of the peeling induction portion 80 (see Figure 3), which will be described later, makes contact. In other words, the blade portion 81 of the peeling induction portion 80 contacts the side surface of the polymerization substrate T in the vicinity of the adsorption portion 52 located on the negative X-axis direction.

[0062] The elastic member 51 comprises a main body portion 511 and an extended portion 512. The main body portion 511 is an annular frame whose outer diameter is approximately the same as that of the upper wafer W1 and whose central portion is hollow. The multiple suction portions 52 are arranged in an annular shape along the shape of the main body portion 511 on the lower surface of the main body portion 511, that is, the surface facing the upper wafer W1.

[0063] The extended portion 512 is a part of the outer periphery of the main body portion 511 that is located closest to the starting point of the peeling (in this case, the outer periphery on the negative X-axis side) and extends toward the opposite side of the peeling direction (negative X-axis side). The support member 61 of the movable portion 60 is connected to the tip of this extended portion 512.

[0064] Returning to Figure 3, the other components of the peeling device 5 will be described. The moving section 60 comprises a support member 61, a moving mechanism 62, and a load cell 63.

[0065] The support member 61 is a member that extends vertically (in the Z-axis direction), with one end connected to the extended portion 512 of the elastic member 51 (see Figure 4), and the other end connected to the moving mechanism 62 via the upper base portion 103.

[0066] The moving mechanism 62 is fixed to the upper part of the upper base portion 103 and moves the support member 61, which is connected to the lower part, in the vertical direction. The load cell 63 detects the load applied to the support member 61.

[0067] The moving unit 60 uses a moving mechanism 62 to move the support member 61 vertically upward, thereby pulling up the first holding unit 50 connected to the support member 61. At this time, the moving unit 60 can pull the first holding unit 50 while controlling the force applied to the upper wafer W1 based on the detection result from the load cell 63.

[0068] Here, as shown in Figure 4, the support member 61, which is the point of force application for lifting, is positioned on the opposite side of the direction of peeling from the suction part 52, which is the pivot point for lifting, that is, the suction part 52 located on the side closest to the starting point of peeling (in this case, the negative X-axis side).

[0069] Therefore, a clockwise rotational force (moment) is generated on the side surface of the polymerized substrate T, which is the point of application for lifting (the starting point of delamination), as shown in Figure 3. As a result, the moving part 60 can pull the upper wafer W1 upwards from its outer edge, and efficiently delaminate the upper wafer W1 from the lower wafer W2.

[0070] The first holding part 50 is supported by the movable part 60, and the movable part 60 is supported by the upper base part 103. The upper base part 103 is supported by a fixing member 101 attached to the ceiling of the processing chamber 100 via a support column 102.

[0071] The second holding portion 70 is positioned below the first holding portion 50 and holds the lower wafer W2 side of the polymerized substrate T by suction. The second holding portion 70 comprises a disc-shaped main body portion 71 and a support member 72 that supports the main body portion 71.

[0072] The main body portion 71 is formed from a metal material such as aluminum. An adsorption surface 73 is provided on the upper surface of the main body portion 71. The adsorption surface 73 is a porous material and is formed from a resin material such as PCTFE (polychlorotrifluoroethylene).

[0073] A suction space 74 is formed inside the main body 71, communicating with the outside via an adsorption surface 73. The suction space 74 is connected to an intake device 712, such as a vacuum pump, via an intake pipe 711. The second holding unit 70 uses the negative pressure generated by the intake of air by the intake device 712 to adsorb the non-bonding surface W2n (see Figure 2) of the lower wafer W2 onto the adsorption surface 73, thereby adsorbing and holding the polymerization substrate T.

[0074] The adsorption surface 73 of the main body 71 is formed to have a diameter approximately equal to that of the lower wafer W2. This makes it possible to suppress the suction of the fluid L (see Figure 6), described later, from the adsorption surface 73 when the fluid L is supplied to the side surface of the polymerization substrate T.

[0075] Furthermore, if non-adherent areas such as grooves are formed on the adsorption surface with the lower wafer W2, there is a risk of cracks occurring in the lower wafer W2 at these non-adherent areas. Therefore, the adsorption surface 73 of the main body 71 is a flat surface without non-adherent areas such as grooves. This prevents cracks from occurring in the lower wafer W2.

[0076] Furthermore, since the adsorption surface 73 is formed from a resin material such as PCTFE, damage to the lower wafer W2 can be further suppressed.

[0077] Furthermore, a groove-shaped drain 75 is provided on the outer circumference of the main body 71, beyond the adsorption surface 73. The drain 75 is connected to a drainage device 752 via a drainage pipe 751. This prevents the fluid L from overflowing from the main body 71 when it is supplied to the side surface of the polymerization substrate T.

[0078] The second holding section 70 is supported by a rotary lifting mechanism 104 fixed to the floor of the processing chamber 100. The rotary lifting mechanism 104 is an example of a substrate rotating section, and rotates the second holding section 70 by rotating the support member 72 around a vertical axis. The rotary lifting mechanism 104 also raises and lowers the second holding section 70 by moving the support member 72 in the vertical direction.

[0079] A peeling induction portion 80 is positioned outside the second holding portion 70. This peeling induction portion 80 forms a starting point on the side surface of the polymerization substrate T where the upper wafer W1 is peeled away from the lower wafer W2.

[0080] The peeling induction section 80 comprises a blade section 81, a moving mechanism 82, and a lifting mechanism 83. The blade section 81 is, for example, a flat blade, and is supported by the moving mechanism 82 so that the blade tip protrudes toward the polymerization substrate T.

[0081] The moving mechanism 82 moves the blade portion 81 along a rail extending in the X-axis direction. The lifting mechanism 83 is fixed to, for example, the upper base portion 103 and moves the moving mechanism 82 vertically. This adjusts the height position of the blade portion 81, i.e., the contact position with the side surface of the polymer substrate T.

[0082] The peeling induction unit 80 adjusts the height of the blade portion 81 using a lifting mechanism 83, and then moves the blade portion 81 horizontally (in this case, in the positive X-axis direction) using a moving mechanism 82. Furthermore, the peeling induction unit 80 brings the blade portion 81 into contact with the joint between the upper wafer W1 and the lower wafer W2 that is exposed on the side surface of the polymerization substrate T. As a result, a portion is formed on the polymerization substrate T that serves as the starting point for peeling the upper wafer W1 from the lower wafer W2.

[0083] Furthermore, a fluid supply unit 90 is positioned outside the second holding unit 70. This fluid supply unit 90 supplies a fluid L containing water (H2O) to the side surface of the polymerization substrate T. For example, the fluid supply unit 90 supplies the fluid L to the part of the side surface of the polymerization substrate T that is in contact with the blade portion 81 of the peel-inducing unit 80 and its vicinity.

[0084] The fluid supply unit 90 includes a nozzle 91 and a moving mechanism (not shown). The nozzle 91 discharges fluid L. The moving mechanism is configured to allow the nozzle 91 to move in the vertical and horizontal directions.

[0085] <Details of the stripping process> Next, the details of the peeling process performed by the peeling device 5 will be explained with reference to Figures 5 to 11. Figure 5 is a flowchart showing the processing steps of the peeling process performed by the peeling device 5 according to this embodiment. The peeling device 5 executes each processing step shown in Figure 5 based on the control of the control unit 31 (see Figure 1) of the control device 30 (see Figure 1).

[0086] First, the control unit 31 loads the polymerization substrate T into the processing chamber 100 and, as shown in Figure 6, holds the lower wafer W2 side of the polymerization substrate T with the second holding unit 70 and holds the upper wafer W1 side of the polymerization substrate T with the first holding unit 50 (step S101).

[0087] Next, the control unit 31 controls the fluid supply unit 90 to supply fluid L to the side surface of the polymerization substrate T (step S102). As a result, the control unit 31 brings the fluid L into contact with the side surface of the polymerization substrate T held by the first holding unit 50 and the second holding unit 70, as shown in Figure 6.

[0088] In step S102, the control unit 31 brings the fluid L into contact with the side surface of the polymerization substrate T located near the adsorption unit 52, which is positioned on the negative X-axis side.

[0089] Next, as shown in Figure 7, the control unit 31 controls the peeling induction unit 80 to press the blade portion 81 against the side surface of the polymerization substrate T in contact with the fluid L, and inserts the blade portion 81 into the joint between the upper wafer W1 and the lower wafer W2 in the polymerization substrate T (step S103).

[0090] In other words, in the process of step S103, the control unit 31 presses the blade portion 81 against the side surface of the polymerization substrate T located near the adsorption portion 52 which is positioned on the negative X-axis side.

[0091] Here, the effect of the fluid L when peeling the upper wafer W1 from the polymerized substrate T using the blade portion 81 will be explained with reference to Figures 8 and 9. Figure 8 is a diagram illustrating the change in the state of the joint in the peeling process according to the embodiment.

[0092] As shown in Figure 8(a), in the polymerization substrate T according to the embodiment, the upper wafer W1 and the lower wafer W2 are joined by siloxane bonds (Si-O-Si). On the other hand, when the blade portion 81 is inserted, stress is applied to this joint, causing a reaction between the water molecules (H2O) contained in the fluid L and the siloxane bonds, as shown in Figure 8(b).

[0093] Then, as shown in Figure 8(c), the siloxane bond is broken when it reacts with water molecules at the junction between the upper wafer W1 and the lower wafer W2, thus reducing the bonding strength at that junction.

[0094] Figure 9 shows the difference in bonding strength when moisture is supplied to the polymerized substrate T during the peeling process and when moisture is not supplied. Note that in Figure 9, the film types of the bonding surfaces W1j and W2j are SiCN, TEOS oxide film, and ThO x The type of plasma (O2, N2) used to pre-treat the bonding surfaces W1j and W2j during bonding (thermal oxide film) is also shown.

[0095] The results shown in Figure 9 indicate that supplying a water-containing fluid L to a polymer substrate T having various bond states reduces the bond strength during the peeling process.

[0096] Returning to the explanation of Figure 5, the control unit 31 operates the moving unit 60 (see Figure 3) in parallel with the processing of step S103 described above (step S104). Specifically, as shown in Figure 10, the control unit 31 moves a part of the outer periphery of the first holding unit 50, specifically the extended portion 512 of the elastic member 51 (see Figure 4), in a direction away from the second holding unit 70.

[0097] As a result, the suction part 52, which is positioned near the area where the blade 81 is inserted, is pulled upward, and the upper wafer W1 begins to peel off from the polymerized substrate T, starting from the area where the blade 81 is inserted.

[0098] Furthermore, as shown in Figure 10, after the upper wafer W1 begins to peel off from the polymerization substrate T, the fluid L gradually penetrates into the deeper part of the joint between the upper wafer W1 and the lower wafer W2 by capillary action. As a result, the chemical reaction shown in Figure 8 also occurs in the deeper part of the joint, thus reducing the bonding strength even in the deeper part of the joint.

[0099] Subsequently, the control unit 31 inserts the blade portion 81 into the joint between the upper wafer W1 and the lower wafer W2, and operates the moving portion 60 to further pull up the first holding portion 50. As a result, peeling proceeds continuously from the end on the negative X-axis side to the end on the positive X-axis side of the upper wafer W1, and finally, as shown in Figure 11, the upper wafer W1 is peeled off from the polymerization substrate T (see Figure 10). This completes the series of peeling processes.

[0100] As described above, in this embodiment, when peeling the upper wafer W1 from the polymerization substrate T using the moving part 60 and the blade part 81, a fluid L containing water is brought into contact with the side surface of the polymerization substrate T. This makes it possible to perform the peeling process while reducing the bonding strength between the upper wafer W1 and the lower wafer W2, thereby making the peeling process more efficient.

[0101] In this embodiment, fluid L is supplied to the side surface of the polymerization substrate T from the nozzle 91, and the blade portion 81 is pressed against the side surface to which the fluid L is supplied. This allows for accurate and efficient peeling even of polymerization substrate T, which is bonded by intermolecular forces and has strong bonding strength.

[0102] Furthermore, in this embodiment, the fluid L containing water is preferably a liquid. This allows the fluid L to gradually penetrate to the deeper part of the joint between the upper wafer W1 and the lower wafer W2 by capillary action. Therefore, according to this embodiment, the peeling process can be made even more efficient.

[0103] Furthermore, in this embodiment, it is preferable that the fluid L containing water is heated in the heating section (not shown) of the fluid supply unit 90. This promotes the chemical reaction shown in Figure 8 at the joint between the upper wafer W1 and the lower wafer W2, thereby further reducing the bonding strength between the upper wafer W1 and the lower wafer W2.

[0104] Therefore, according to this embodiment, the peeling process can be made even more efficient.

[0105] The fluid L in this embodiment may be acidic, neutral, or alkaline. For example, when the upper wafer W1 and the lower wafer W2 are joined by a so-called Cu-Cu direct bond, controlling the fluid L to be weakly alkaline (pH = approximately 7-8) can suppress the deterioration of the Cu located at the joint by the fluid L.

[0106] <Various variations> Next, various modifications of the embodiment will be described with reference to Figures 12 to 14. In the following modifications, the same reference numerals are used for parts that are the same as in the embodiment, and redundant explanations will be omitted.

[0107] Figure 12 is an enlarged side view showing one step of the peeling process according to Modification 1 of the embodiment. As shown in Figure 12, in Modification 1, when the blade portion 81 is pressed against the side surface of the polymerization substrate T, fluid L is supplied to the side surface from the nozzle 91. That is, in Modification 1, the process of pressing the blade portion 81 against the side surface of the polymerization substrate T and the process of supplying fluid L from the nozzle 91 are performed simultaneously.

[0108] This also allows for delamination while reducing the bonding strength between the upper wafer W1 and the lower wafer W2. Therefore, according to Modification 1, the delamination process can be made more efficient.

[0109] Furthermore, in Modification 1, since the dynamic fluid L is supplied to the starting point of the delamination, the fluid L can be effectively penetrated to the deeper part of the joint between the upper wafer W1 and the lower wafer W2. Therefore, according to Modification 1, the bonding strength between the upper wafer W1 and the lower wafer W2 can be further reduced, and thus the delamination process can be made even more efficient.

[0110] Furthermore, in Modification 1, similar to the embodiment, the fluid L containing water is preferably heated in the heating section of the fluid supply unit 90. This promotes the chemical reaction shown in Figure 8 at the joint between the upper wafer W1 and the lower wafer W2, thereby further reducing the bonding strength between the upper wafer W1 and the lower wafer W2.

[0111] Furthermore, in Modification 1, the fluid L may be a liquid or water vapor. When the fluid L is water vapor, the chemical reaction shown in Figure 8 can be further accelerated at the junction between the upper wafer W1 and the lower wafer W2. Therefore, according to Modification 1, the peeling process can be made even more efficient.

[0112] Figure 13 is a schematic plan view showing one step of the peeling process according to Modification 1 of the embodiment. As shown in Figure 13, in Modification 1, the peeling process may be performed while pressing multiple (two in the figure) blades 81 against the polymerization substrate T. This makes the peeling process even more efficient.

[0113] Furthermore, in the modified example 1, as shown in Figure 13, fluid L may be supplied to a single blade portion 81 using multiple (two in the figure) nozzles 91. This allows sufficient fluid L to be supplied to the area to be peeled off, thereby further improving the efficiency of the peeling process.

[0114] In the example shown in Figure 13, two blades 81 are used, but the number of blades 81 may be three or more. Also, in the example shown in Figure 13, two nozzles 91 are arranged for one blade 81, but three or more nozzles 91 may be arranged for one blade 81.

[0115] Figure 14 is a schematic side view showing the configuration of the peeling device 5 according to a modified example 2 of the embodiment. As shown in Figure 14, the modified example 2 differs from the embodiment in that a storage tank 92 is provided in the fluid supply unit 90.

[0116] The storage tank 92 is configured to store the fluid L and to hold the polymerization substrate T inside. In the modified example 2, the control unit 31 (see Figure 1) performs the peeling process while immersing the polymerization substrate T in the liquid fluid L stored in the storage tank 92.

[0117] This also allows for delamination while reducing the bonding strength between the upper wafer W1 and the lower wafer W2. Therefore, according to Modification 2, the delamination process can be made more efficient.

[0118] Furthermore, in the modified example 2, the water-containing fluid L is preferably heated in the heating section of the fluid supply unit 90. This promotes the chemical reaction shown in Figure 8 at the joint between the upper wafer W1 and the lower wafer W2, thereby further reducing the bonding strength between the upper wafer W1 and the lower wafer W2.

[0119] The peeling apparatus 5 according to this embodiment comprises a first holding unit 50, a second holding unit 70, a fluid supply unit 90, and a control unit 31. The first holding unit 50 holds the first substrate (upper wafer W1) of the polymerized substrate T, in which a first substrate (upper wafer W1) and a second substrate (lower wafer W2) are joined, and moves the first substrate (upper wafer W1) in a direction away from the second substrate (lower wafer W2). The second holding unit 70 holds the second substrate (lower wafer W2) of the polymerized substrate T. The fluid supply unit 90 supplies a fluid L containing water to the side surface of the polymerized substrate T. The control unit 31 controls each unit. The control unit 31 also holds the polymerized substrate T with the first holding unit 50 and the second holding unit 70. The control unit 31 also peels the first substrate (upper wafer W1) from the polymerized substrate T, starting from the side surface, while bringing the fluid L containing water into contact with the side surface using the fluid supply unit 90. This makes the peeling process more efficient.

[0120] Furthermore, in the stripping apparatus 5 according to this embodiment, the fluid supply unit 90 has a plurality of nozzles 91 that discharge a fluid L containing water. This makes the stripping process even more efficient.

[0121] Furthermore, in the stripping apparatus 5 according to this embodiment, the fluid supply unit 90 has a storage tank 92 for storing a fluid L containing water, which is a liquid. This makes the stripping process more efficient.

[0122] Furthermore, in the stripping apparatus 5 according to the embodiment, the fluid supply unit 90 has a heating unit that heats the fluid L containing water. This makes the stripping process even more efficient.

[0123] Furthermore, the peeling apparatus 5 according to this embodiment further includes a substrate rotating part (rotating lifting mechanism 104) that rotates the second holding part 70. This makes the peeling process even more efficient.

[0124] Furthermore, the peeling system 1 according to this embodiment includes a peeling device 5 and a cleaning device (first cleaning station 15, second cleaning station 22). The peeling device 5 peels the first substrate (upper wafer W1) from the polymerized substrate T to which the first substrate (upper wafer W1) and the second substrate (lower wafer W2) are joined. The cleaning device (first cleaning station 15, second cleaning station 22) cleans the first substrate (upper wafer W1) and the second substrate (lower wafer W2) after peeling. The peeling device 5 also has the above configuration. This makes the peeling process more efficient.

[0125] Furthermore, the peeling method according to the embodiment includes a holding step (step S101) and a peeling step. The holding step (step S101) involves holding the polymerized substrate T, which is formed by joining a first substrate (upper wafer W1) and a second substrate (lower wafer W2). The peeling step involves peeling the first substrate (upper wafer W1) from the polymerized substrate T, starting from the side surface of the polymerized substrate T. The peeling step also includes a step (step S102) of bringing a fluid L containing water into contact with the side surface. This makes the peeling process more efficient.

[0126] Furthermore, in the stripping method according to this embodiment, the fluid L containing water is water vapor. This makes the stripping process even more efficient.

[0127] Furthermore, in the stripping method according to this embodiment, the fluid L containing water is a liquid. This makes the stripping process even more efficient.

[0128] Furthermore, in the peeling method according to the embodiment, the peeling step is performed while discharging a fluid L containing water from a plurality of nozzles 91. This makes the peeling process even more efficient.

[0129] Furthermore, in the peeling method according to the embodiment, the peeling step includes a supply step (step S102) and a pressing step (step S103). In the supply step (step S102), a fluid L containing water is supplied to the side surface from the nozzle 91. In the pressing step (step S103), the blade portion 81 is pressed against the side surface to which the fluid L containing water has been supplied. As a result, even polymerized substrates T that are bonded by intermolecular forces and have strong bonding strength can be peeled accurately and efficiently.

[0130] Furthermore, in the peeling method according to the embodiment, the peeling step is performed by immersing the polymerized substrate T in a fluid L containing stored water. This makes the peeling process more efficient.

[0131] Furthermore, in the stripping method according to this embodiment, the fluid L containing water is heated. This makes the stripping process even more efficient.

[0132] Furthermore, in the peeling method according to the embodiment, the first substrate (upper wafer W1) and the second substrate (lower wafer W2) in the polymerized substrate T are joined by intermolecular forces. This makes it possible to realize a polymerized substrate T in which the upper wafer W1 and the lower wafer W2 are firmly joined.

[0133] While embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments, and various modifications are possible without departing from its spirit. For example, the above embodiments show an example of peeling the upper wafer W1 from a polymerization substrate T to which the upper wafer W1 and lower wafer W2 are joined by intermolecular forces, but the present disclosure is not limited to such an example.

[0134] For example, in this disclosure, the lower wafer W2 may be peeled off from the polymerization substrate T. Also, in this disclosure, the upper wafer W1 or the lower wafer W2 may be peeled off from the polymerization substrate T to which the upper wafer W1 and the lower wafer W2 are bonded with an adhesive.

[0135] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of Symbols]

[0136] 1. Peeling System 5. Peeling device 15. First washing station (an example of a washing device) 22. Second washing station (an example of a washing device) 31 Control Unit 50 1st holding part 60 Mobile Unit 70 Second holding part 80 Peeling Inducing Section 81 Blade part 90 Fluid supply section 91 Nozzles 92 Storage tank 104 Rotary Lifting Mechanism (Example of a Circuit Board Rotating Section) T Polymerization substrate W1 Upper wafer (an example of the first substrate) W2 Lower wafer (an example of a second substrate)

Claims

1. A step of holding a polymerized substrate in which a first substrate and a second substrate are joined by a siloxane bond, A step of peeling the first substrate from the polymerized substrate, starting from the side surface of the polymerized substrate, Includes, The peeling step includes bringing a water-containing fluid into contact with the side surface to react the siloxane bond with water molecules and break the siloxane bond. Method of removal.

2. When the polymerized substrate is bonded including Cu-Cu direct bonding, the fluid is weakly alkaline. The peeling method according to claim 1.

3. The film type at the junction between the first substrate and the second substrate is one of the following: SiCN, TEOS oxide film, or ThOx (thermal oxide film). The peeling method according to claim 1 or 2.

4. A polymerized substrate in which a first substrate and a second substrate are joined by a siloxane bond, comprising a first holding part that holds the first substrate and moves the first substrate away from the second substrate, The polymerization substrate includes a second holding portion that holds the second substrate, A fluid supply unit that supplies a fluid containing water to the side surface of the polymerization substrate, A control unit that controls each part, Equipped with, The control unit, The polymerization substrate is held by the first holding part and the second holding part, The fluid supply unit brings the water-containing fluid into contact with the side surface, causing the siloxane bond to react with water molecules and break the siloxane bond, while peeling the first substrate from the polymerization substrate starting from the side surface. Peeling device.

5. A peeling apparatus for peeling the first substrate from a polymerized substrate in which a first substrate and a second substrate are joined by siloxane bonds, A cleaning apparatus for cleaning the first substrate and the second substrate after peeling, Equipped with, The peeling device is A first holding part holds the first substrate in a polymerized substrate in which a first substrate and a second substrate are joined together, and moves the first substrate in a direction away from the second substrate, The polymerization substrate includes a second holding portion that holds the second substrate, A substrate rotating part that rotates the second holding part, A fluid supply unit that supplies a fluid containing water to the side surface of the polymerization substrate, A control unit that controls each part, It has, The control unit, The polymerization substrate is held by the first holding part and the second holding part, The fluid supply unit brings the water-containing fluid into contact with the side surface, causing the siloxane bond to react with water molecules and break the siloxane bond, while peeling the first substrate from the polymerization substrate starting from the side surface. Peeling system.

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