Semiconductor processing unit

Abstract

We disclose information regarding semiconductor processing equipment. [Solution] The semiconductor processing apparatus comprises a process chamber configured to accept a plurality of substrates, an accumulator container configured to fluidly communicate with the process chamber and store precursors in a gaseous state, and at least two solid precursor storage containers, each configured to accept a precursor in a gaseous state, convert the accepted gaseous precursor into a solid state within the respective solid precursor storage container, and convert the solid precursor into a gaseous state. Each of the at least two solid precursor storage containers is fluidly communicating with the accumulator container.

Description

Technical Field

[0001] The present disclosure generally relates to the fields of semiconductor processing methods, and related structures and devices, as well as the fields of device and integrated circuit manufacturing. More particularly, the present disclosure generally relates to semiconductor processing apparatuses in which precursors can be stored in a solid state.

Background Art

[0002] In the field of semiconductor manufacturing apparatuses, batch processing apparatuses, such as vertical furnaces, can generally significantly increase throughput compared to single-wafer tools that process wafers one by one.

[0003] However, in order to form a layer of the required thickness in each of the plurality of wafers or substrates contained, the amount of precursor that needs to be provided in the reaction chamber or process chamber of a vertical furnace is significantly higher than the amount that needs to be provided in the reaction chamber of a single-wafer tool to form a layer of the same required thickness. Further, for example, it may be necessary to provide the required amount of precursor within a specific short period of time to provide an acceptable throughput and / or the required precursor pressure in the process chamber.

[0004] Some precursors, such as ammonia, can be stored in a gaseous state for a long time without decomposing. Storage in a gaseous state enables rapid and reliable delivery of the precursor. The supply of such a precursor to the process chamber is relatively simple because the required amount of gas can flow from the sub-fab supply unit. Other precursors decompose when stored in a gaseous state, especially when they need to be stored at a specific temperature to avoid deposition on the surface of the container containing the precursor gas, and are no longer suitable for use in the deposition process. For such precursors, alternative solutions are needed.

[0005] There is a need for apparatuses and methods that can supply large amounts of vapor-phase precursors on demand and at high flow rates.

[0006] Any discussions described in this section, including discussions of problems and solutions, are included in this disclosure solely for the purpose of providing background to this disclosure, and none of the discussions, in whole or in part, should be considered to constitute prior art that was known at the time the invention was made or that they constitute other prior art. [Overview of the project]

[0007] This summary introduces the selected concepts in a simplified form, which are described in more detail below. This summary is not necessarily intended to identify the main or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0008] According to a first aspect of the present invention, a semiconductor processing apparatus is provided comprising: a process chamber configured to accept a plurality of substrates; an accumulator container having fluid communication with the process chamber and configured to store a precursor in a gaseous state; and at least two solid precursor storage containers, each configured to accept a precursor in a gaseous state, convert the accepted gaseous precursor into a solid state within the respective solid precursor storage container, and convert the solid precursor into a gaseous state. Each of the at least two solid precursor storage containers is in fluid communication with the accumulator container to enable the supply of a gaseous precursor to the accumulator container.

[0009] Providing precursors in gaseous form to solid precursor storage containers may have advantages over providing them in liquid or powder form. Providing liquid precursors, for example dissolved in a solvent or otherwise supported, to precursor storage containers, and then evaporating the solvent in the containers, requires an additional drying step in the process of (re)filling the precursor storage containers, which can result in solvent contamination of the precursor being extracted from the containers, and the number of substrates that can be processed may be limited due to capacity limitations, which can affect throughput. Supplying precursors in powder form can cause clogging, and a carrier gas may be required to remove the precursors from the containers.

[0010] By providing at least two solid precursor storage containers, one of the solid precursor storage containers may receive and store the precursor, while the other solid precursor storage container may supply the precursor to the accumulator container, thereby enabling a continuous supply of precursor gas to the accumulator container.

[0011] By providing an accumulator container for short-term storage of precursor gas near the process chamber, high doses of precursor can be collected and supplied to the process chamber in a shorter time than it would take to sublimate the same amount of precursor gas. This enables a faster supply of precursor to the process chamber, thereby increasing throughput.

[0012] Each of at least two solid precursor storage containers may be in fluid communication with a bulk precursor supply unit for providing the precursor in gaseous form.

[0013] By enabling fluid communication with the bulk precursor supply unit, at least two solid precursor storage containers can be refilled with precursor gas without requiring removal from the semiconductor processing unit, allowing for longer operating times of the semiconductor processing unit and consequently increasing throughput.

[0014] Each of the at least two solid precursor storage containers may include its own heater.

[0015] Each of at least two solid precursor storage vessels may include a gas inlet port configured to guide a gaseous precursor into its respective solid precursor storage vessel.

[0016] The semiconductor processing apparatus may include a first gas line for providing a fluid connection between a first solid precursor storage container and an accumulator container of at least two solid precursor storage containers, and a second gas line for providing a fluid connection between a second solid precursor storage container and an accumulator container of at least two solid precursor storage containers.

[0017] The semiconductor processing apparatus may include a first gas flow control valve installed in a first gas line and a second gas flow control valve installed in a second gas line. The semiconductor processing apparatus may also include a controller configured to set the second gas flow control valve to an open state substantially simultaneously with setting the first gas flow control valve to a closed state.

[0018] The semiconductor processing apparatus may include a third gas line for providing a fluid connection between a bulk precursor supply unit for providing a gaseous precursor and a first solid precursor storage container of at least two solid precursor storage containers, and a fourth gas line for providing a fluid connection between the bulk precursor supply unit and a second solid precursor storage container of at least two solid precursor storage containers.

[0019] The semiconductor processing apparatus may include a third gas flow control valve located in a third gas line and a fourth gas flow control valve located in a fourth gas line. The semiconductor processing apparatus may also include a controller configured to set the fourth gas flow control valve to a closed state substantially simultaneously with setting the third gas flow control valve to an open state.

[0020] The semiconductor processing apparatus may include a third gas flow control valve heater for heating a third gas flow control valve and a fourth gas flow control valve heater for heating a fourth gas flow control valve.

[0021] The semiconductor processing apparatus may include an enclosure that surrounds at least a portion of the semiconductor processing apparatus located between a bulk precursor supply unit and a process chamber, and an enclosure heater for heating the inside of the enclosure.

[0022] The enclosure may surround at least one gas flow control valve. The gas line may be substantially located outside the enclosure.

[0023] The enclosure may surround at least one gas line. The enclosure may surround at least an accumulator container and at least two solid precursor storage containers.

[0024] The enclosure may surround at least one gas flow control valve. The enclosure may surround one or more of the first, second, third, fourth, fifth, and sixth gas flow control valves. Each gas line that is in fluid communication with one or more gas flow control valves surrounded by the enclosure may be located outside the enclosure and may be heated using a heating jacket.

[0025] The accumulator container may include an accumulator container heater.

[0026] The semiconductor processing apparatus may include a fifth gas flow control valve, which is located upstream of the accumulator vessel and configured to control the gas flow from one of at least two solid precursor storage vessels into the accumulator vessel.

[0027] The semiconductor processing apparatus may include a sixth gas flow control valve located downstream of the accumulator vessel and configured to control the gas flow from the accumulator vessel into the process chamber.

[0028] The semiconductor processing apparatus may include a fifth gas flow control valve heater. The semiconductor processing apparatus may include a sixth gas flow control valve heater.

[0029] Each of at least two solid precursor storage containers may include a first heater for heating a portion of each solid precursor storage container close to its respective gas inlet port, and a second heater for heating a portion of each solid precursor storage container further away from its respective gas inlet port.

[0030] By enabling independent control of the temperatures of different portions of the solid precursor storage container, deposition of the precursor at or near the gas inlet port and / or gas outlet port can be reduced or avoided during sublimation of the solid precursor contained in the solid precursor storage container.

[0031] The semiconductor processing apparatus may include two or more accumulator containers, each accumulator container being configured to receive a precursor gas from at least one of at least two solid precursor storage containers and to provide the precursor gas to the process chamber. The two or more accumulator containers may be connected in parallel such that each accumulator container can independently supply the precursor gas to the process chamber.

[0032] According to a second aspect of the present invention, a method for forming layers on multiple substrates using a semiconductor processing apparatus is provided. The method may include the steps of: supplying a gas precursor from a bulk precursor supply unit to an accumulator container while causing a first solid precursor storage container to accept a gas precursor from a bulk precursor supply unit; supplying a precursor from the accumulator container to a process chamber while causing a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to the first solid precursor storage container; supplying a purge gas to the process chamber while causing a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor storage container supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor storage container to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor storage container to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor supply unit to accept a gas precursor from a bulk precursor storage container to accept a

[0033] A third aspect of the present invention provides a method for providing a precursor gas to a process chamber of a semiconductor processing apparatus, the semiconductor processing apparatus comprising: a process chamber configured to accept a plurality of substrates; an accumulator container fluidly communicating with the process chamber and configured to store a precursor in a gaseous state; and at least two solid precursor storage containers, each configured to accept a precursor in a gaseous state, convert the accepted gaseous precursor into a solid state within its respective solid precursor storage container, and convert the solid precursor into a gaseous phase, with each of the at least two solid precursor storage containers fluidly communicating with the accumulator container to enable the supply of a gaseous phase precursor to the accumulator container. The method includes the steps of i) allowing a precursor to be received in a gaseous state in a first solid precursor storage container of at least two solid precursor storage containers and converting the precursor to a solid state; ii) allowing a solid precursor to be converted to a gaseous state in a second solid precursor storage container of at least two solid precursor storage containers and providing the gaseous precursor to an accumulator container; and iii) providing the precursor gas from the accumulator container to a process chamber.

[0034] Steps i) and ii) may be carried out substantially simultaneously. Steps ii) and iii) may not overlap substantially in time. The method may include, after step iii), allowing a second solid precursor storage container to receive a gaseous precursor and convert the precursor to a solid state, and allowing a first solid precursor storage container to convert the solid precursor to a gaseous state and provide the gaseous precursor to an accumulator container.

[0035] Allowing a gaseous precursor to be received by a solid precursor storage container may include supplying the gaseous precursor to the solid precursor storage container from a bulk precursor supply unit. Converting the gaseous precursor to a solid state in the solid precursor storage container may include cooling a portion of the solid precursor storage container to a temperature below the deposition temperature of the precursor. Converting the solid precursor to a gaseous state in the solid precursor storage container may include heating a portion of the solid precursor storage container to a temperature above the sublimation temperature of the precursor.

[0036] The accumulator vessel may include a pressure transducer and a thermocouple, and step iii) may include determining the amount of precursor to be supplied to the reactor based on data received from the pressure transducer and thermocouple. Step iii) may include closing the input port of the accumulator vessel so that no further precursor gas is supplied to the accumulator vessel while the precursor gas is being supplied to the process chamber. Step iii) may include leaving the input port of the accumulator vessel open so that the precursor gas is supplied to the accumulator vessel while the precursor gas is being supplied to the process chamber.

[0037] Other technical features may be readily apparent to those skilled in the art from the following drawings, description, and claims.

[0038] For the purpose of summarizing the advantages of the present invention over the prior art, certain objectives and advantages of the present invention are described above herein. Naturally, it will be understood that not all of these objectives or advantages are necessarily achieved according to any particular embodiment of the present invention. Therefore, those skilled in the art will recognize that the present invention may be embodied or practiced in a manner that achieves or optimizes one or a group of advantages as taught or suggested herein, without necessarily achieving other objectives or advantages that may be taught or suggested herein.

[0039] All of these embodiments are intended to be within the scope of the present invention disclosed herein. These and other embodiments will be readily apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, but the present invention is not limited to any particular embodiment disclosed. [Brief explanation of the drawing]

[0040] Here, a specific embodiment of the present invention will be described as an example with reference to the accompanying drawings.

[0041] [Figure 1] This is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 2] This is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention, which includes an enclosure and a heater. [Figure 3] This is a schematic cross-sectional view of a solid precursor storage container that may be included in a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 4] This is a schematic cross-sectional view of a process chamber that may be included in a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 5] This is a flowchart of the method according to an embodiment of the present invention. [Figure 6] This figure shows the valve state of a semiconductor processing apparatus at a specific stage of the method according to an embodiment of the present invention. [Figure 7] This figure shows the valve state of a semiconductor processing apparatus at a specific stage of the method according to an embodiment of the present invention. [Figure 8] This is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention, which has a dose determination function. [Figure 9] This is a flowchart of a deposition method according to an embodiment of the present invention.

[0042] It will be understood that the elements in the figures are illustrated for simplicity and clarity and are not necessarily drawn to actual size. For example, the dimensions of some of the elements in the figures may be exaggerated relative to others to help improve understanding of the illustrated embodiments of this disclosure. [Modes for carrying out the invention]

[0043] The descriptions of exemplary embodiments of the methods and configurations provided below are illustrative and for illustrative purposes only. The following descriptions are not intended to limit the scope of this disclosure or the claims. Furthermore, the enumeration of numerous embodiments having the described features or steps is not intended to exclude other embodiments having additional features or steps, or other embodiments incorporating different combinations of the described features or steps.

[0044] In this disclosure, when two or more elements are referred to as “fluidally connected,” it means that a fluid, such as a gas or liquid or a mixture thereof, can flow between the elements in one direction or in both directions. Fluid connection may be achieved, for example, by a gas line, pipe, inlet, outlet, or any combination thereof. Fluid connection may be shut off, for example, by a valve or other flow control element.

[0045] In this disclosure, any two numbers of a variable can constitute a viable range of that variable, and any range shown may include or exclude the endpoints. In addition, any value of a variable shown (whether shown with “approximately” or not) may refer to an exact value or an approximate value, may include its equivalent, and in some embodiments may refer to the mean, median, representative value, principal value, etc. Furthermore, in this disclosure, the terms “including,” “constituted by,” and “having” may independently refer to “typically or broadly comprising,” “comprising,” “consisting essentially of,” or “consisting of” in some embodiments. In this disclosure, the meaning of any defined term does not necessarily exclude the ordinary and conventional meanings in some embodiments. In some cases, the percentages shown herein may be relative or absolute percentages.

[0046] It should be noted that while many exemplary materials are given through embodiments of this disclosure, the chemical formulas given for each of the exemplary materials should not be interpreted as restrictive, and the non-restrictive exemplary materials given should not be limited by any exemplary stoichiometry.

[0047] In this specification, it will be understood that the terms “on” or “over” may be used to describe a relative spatial relationship. Another element, membrane, or layer may be directly on top of the layer described, or another layer (intermediate layer) or element may be interposed between them, or a layer may be placed on top of the layer described but not completely covering the surface of the layer described. Thus, unless the term “directly” is used separately, the terms “on” or “over” will be interpreted as relative concepts. Similarly, it will be understood that the terms “under,” “underlying,” or “below” will be interpreted as relative concepts.

[0048] Referring to Figure 1, a semiconductor processing apparatus 101 according to an embodiment of the present invention is shown. The semiconductor processing apparatus 101 comprises a process chamber 102 configured to receive a plurality of substrates 103 for processing. The process chamber 102 comprises at least one process chamber gas inlet 104 for allowing gas to enter the process chamber 102 and at least one process chamber gas exhaust port 105 for removing gas from the process chamber 102. The semiconductor processing apparatus 101 comprises an accumulator container 106 in fluid communication with the process chamber 102, the accumulator container 106 configured to store precursors in a gaseous state. The semiconductor processing apparatus 101 comprises at least two solid precursor storage containers, each in fluid communication with the accumulator container 106 to allow the provision of gaseous precursors to the accumulator container 106. Each of the at least two solid precursor storage containers 107 is configured to convert the solid precursors into a gaseous state. Although Figure 1 shows two solid precursor storage containers 107, it will be understood by those skilled in the art that there may be three or more solid precursor storage containers, for example, three or four or more. Hereinafter, the invention will be described in relation to a first solid precursor storage container 108 and a second solid precursor storage container 109, without strictly limiting the invention to embodiments having two solid precursor storage containers 107.

[0049] The precursor may be one that can be stored in a solid state for a long period of time without significant decomposition. When the precursor needs to be transported between components of the semiconductor processing apparatus 101, the precursor may be converted to a gaseous state, for example, when supplying the precursor from the solid precursor storage container 107 to the accumulator container 106. The precursor may be stored in a gaseous state for a relatively short period, for example, in the accumulator container 106 before being delivered to the process chamber 102, or in the solid precursor storage container 107 before being delivered to the accumulator container 106.

[0050] Each of at least two solid precursor storage containers 107 may be in fluid communication with a bulk precursor supply unit 110 for providing the precursor in gaseous form. The bulk precursor supply unit 110 may supply the precursor in gaseous form to the solid precursor storage containers 107 as needed. The bulk precursor supply unit 110 may store the precursor in a solid state. The bulk precursor supply unit 110 may also be a subfab supply unit for supplying the precursor to a plurality of semiconductor processing devices 101.

[0051] The semiconductor processing apparatus 101 may include a first gas line 111 for providing a fluid connection between a first solid precursor storage container 108 and an accumulator container 106 of at least two solid precursor storage containers 107, and a second gas line 112 for providing a fluid connection between a second solid precursor storage container 109 and an accumulator container 106 of at least two solid precursor storage containers 107. The first gas line 111 may include a first gas flow control valve 113 for controlling the flow of precursor gas in the first gas line 111. The second gas line 112 may include a second gas flow control valve 114 for controlling the flow of precursor gas in the second gas line 112. The gas flow control valves 113, 114 may be, for example, valves having only an open position and a closed position, or valves that are configured to allow a specific amount of gas flow by being neither fully open nor fully closed. The first gas line 111 may include a first gas flow measuring device for measuring the velocity of the gas flow in the first gas line 111. The second gas line 112 may include a second gas flow measuring device for measuring the velocity of the gas flow in the second gas line 112.

[0052] By providing separate gas lines in which the gas flow can be controlled using separate gas flow control valves, the supply of precursors from each of the at least two solid precursor storage containers 107 to the accumulator container 106 can be controlled.

[0053] The semiconductor processing apparatus 101 may include a third gas line 115 for providing a fluid connection between the bulk precursor supply unit 110 and the first solid precursor storage container 108. The third gas line 115 may include a third gas flow control valve 117 for controlling the flow of precursor gas within the third gas line 115. The semiconductor processing apparatus 101 may also include a fourth gas line 116 for providing a fluid connection between the bulk precursor supply unit 110 and the second solid precursor storage container 109. The fourth gas line 116 may include a fourth gas flow control valve 118 for controlling the flow of precursor gas within the fourth gas line 116.

[0054] By providing separate gas lines in which the gas flow can be controlled using separate gas flow control valves, the supply of precursors from the bulk precursor supply unit 110 to the solid precursor storage containers 107 can be controlled individually. As will be discussed in more detail below, this allows one (or more) of the at least two solid precursor containers to supply gas precursors to the accumulator container 106, while one (or more) of the at least two solid precursor storage containers 107 can receive gas precursors from the bulk precursor supply unit 110.

[0055] The semiconductor processing apparatus 101 may include a fifth gas flow control valve 119, disposed upstream of the accumulator container 106 and configured to control the gas flow from at least one of the two solid precursor storage containers 107 into the accumulator container 106. The fifth gas flow control valve 119 may not be provided in some embodiments, and a third gas flow control valve 117 and a fourth gas flow control valve 118 may be used to control the gas from the solid precursor storage containers 107 into the accumulator container 106. The semiconductor processing apparatus 101 may also include a sixth gas flow control valve 120 disposed between the accumulator container 106 and the process chamber 102 to control the gas flow from the accumulator container 106 into the process chamber 102. The semiconductor processing apparatus 101 may also include heating means for heating the fifth gas flow control valve 119. The semiconductor processing apparatus 101 may also include heating means for heating the sixth gas flow control valve 120.

[0056] The gas flow control valve used in the semiconductor processing apparatus according to the embodiment of the present invention preferably has high flow conductance to minimize flow restriction caused by the passage through the valve, and a high operating temperature to ensure that any condensation of gas in the valve is kept to a minimum.

[0057] The semiconductor processing apparatus 101 may include a second process gas source 121 that is in fluid communication with the process chamber 102 for supplying a second process gas to the process chamber 102. The second process gas is different from the precursor. A second process gas flow control valve 122 may be provided between the second process gas source 121 and the process chamber 102 to control the flow of the second process gas into the process chamber 102. The semiconductor processing apparatus 101 may also include a purge gas source 123 that is in fluid communication with the process chamber 102 for supplying purge gas to the process chamber 102. A purge gas flow control valve 124 may be provided between the purge gas source 123 and the process chamber 102 to control the flow of purge gas into the process chamber 102.

[0058] Referring to Figure 2, the semiconductor processing apparatus 101 may include an enclosure 125 that surrounds at least a portion of the semiconductor processing apparatus located between the bulk precursor supply unit 110 and the process chamber 102. This may help improve temperature uniformity of the precursor supply line. The enclosure 125 includes an enclosure heater 126 for heating the inside of the enclosure 125. In some embodiments, the enclosure 125 may surround at least one gas flow control valve, e.g., at least one of the first, second, third, fourth, fifth, and sixth gas flow control valves, and preferably all of them. Each gas line that fluidly communicates with one or more gas flow control valves surrounded by the enclosure may be located outside the enclosure and may be heated using a heating jacket.

[0059] In some embodiments, the enclosure 125 surrounds at least a portion of the first, second, third, fourth, and fifth gas lines, preferably substantially all of the first, second, third, fourth, and fifth gas lines. In some embodiments, the enclosure 125 surrounds the accumulator container 106 together with the first, second, third, fourth, fifth, and sixth gas flow control valves.

[0060] The enclosure heater 126 may be located inside the enclosure 125. The enclosure heater 126 may be incorporated into one or more walls of the enclosure 125. The enclosure heater 126 may comprise multiple heating elements located inside and along the walls of the enclosure 125.

[0061] Referring here to both Figures 1 and 2, the semiconductor processing apparatus 101 may include a fifth gas line 127 providing a fluid connection between the solid precursor storage container 107 and the process chamber 102, and the accumulator container 106 may be located in the fifth gas line 127. The fifth gas line 127 may include a fifth gas flow control valve 119 and a sixth gas flow control valve 120. In some embodiments, the accumulator container 106 may be a container having an input that fluidly communicates with the fifth gas line 127 and an output that fluidly communicates with the sixth gas line. In some embodiments, the accumulator container 106 may be part of the fifth gas line 127 between the fifth gas flow control valve 119 and the sixth gas flow control valve 120, i.e., a separate container may not be provided. In these embodiments, a portion of the fifth gas line 127 between the fifth gas flow control valve 119 and the sixth gas flow control valve 120 may be located inside the enclosure 125, if an enclosure 125 is provided.

[0062] In some embodiments, at least a portion, and preferably a substantial portion, of the fifth gas line 127 is located inside the enclosure 125. In some embodiments, the enclosure 125 encloses as much of the first gas line 111, the second gas line 112, and the fifth gas line 127 as possible, so that a minimum portion of each gas line is outside the enclosure 125 where, for example, the gas lines connect to the solid precursor storage container, the accumulator container 106, and the process chamber 102.

[0063] The accumulator container 106 may include a pressure transducer 129 for measuring the pressure of the precursor gas within the accumulator container 106, and an accumulator thermocouple 130 for measuring the temperature of the precursor gas within the accumulator container 106. The accumulator thermocouple 130 may be located in a thermowell extending from the top of the accumulator container 106 to near the center of the internal volume of the accumulator container 106. The pressure transducer 129 may be located in the inlet line to the accumulator container 106, i.e., in a fifth gas line 127 upstream of the accumulator container 106. In embodiments where an enclosure 125 is provided, the pressure transducer 129 may have a connection to the fifth gas line 127 located inside the enclosure 125.

[0064] The semiconductor processing apparatus 101 may include heaters for each gas flow control valve that controls the gas line through which the precursor gas flows. The heaters may be individually controllable. By heating the gas flow control valve through which the precursor gas flows to a temperature higher than the deposition temperature of the precursor gas, the deposition of the precursor on the gas flow control valve can be prevented, thereby avoiding clogging of the gas flow control valve. The gas flow control valve may be heated continuously using its respective heater, or it may be heated only when it is open to allow the precursor gas to flow.

[0065] Referring to Figure 3, an example of a solid precursor storage container 301 that may be included in a semiconductor processing apparatus 101 according to an embodiment of the present invention is shown. The solid precursor storage container 301 has an upper wall 302, a bottom wall 303, and side walls 304, a gas inlet port 305, and a gas outlet port 306. The gas inlet port 305 may be provided in the upper wall 302. The gas outlet port 306 may be provided in the upper wall 302. The gas inlet port 305 provides a conduit for precursor gas to flow into the solid precursor storage container 301 and may be in fluid communication with a bulk precursor supply unit. The gas outlet port 306 provides a conduit for precursor gas to flow out of the solid precursor storage container 301 and may be in fluid communication with an accumulator container.

[0066] The solid precursor storage container 301 includes an upper wall heater 307 for heating the upper wall 302, a side wall heater 308 for heating the side wall 304, and a bottom wall heater 309 for heating the bottom wall 303. The upper wall heater 307, side wall heater 308, and bottom wall heater 309 are individually controllable. The solid precursor storage container 301 may also include a solid precursor storage container controller 310, which includes an upper wall heater controller 311, a side wall heater controller 312, and a bottom wall heater controller 313, each of which can be operated independently.

[0067] The upper wall heater controller 311 may be configured to avoid the deposition of precursor on the upper wall 302 of the solid precursor storage container 301 by maintaining the temperature of the upper wall 302 of the solid precursor storage container 301 at a temperature higher than the deposition temperature of the precursor gas while the precursor is being supplied from the bulk precursor supply unit to the solid precursor storage container 301. The side wall heater controller 312 may be configured to avoid the deposition of precursor on the side wall 304 of the solid precursor storage container 301 by maintaining the temperature of the side wall 304 of the solid precursor storage container 301 at a temperature higher than the deposition temperature of the precursor gas while the precursor is being supplied from the bulk precursor supply unit to the solid precursor storage container 301. The bottom wall heater controller 313 may be configured to cause the deposition of precursor on the bottom wall 303 of the solid precursor storage container 301 by maintaining the temperature of the bottom wall 303 of the solid precursor storage container 301 at a temperature lower than the deposition temperature of the precursor gas while the precursor is being supplied from the bulk precursor supply unit to the solid precursor storage container 301.

[0068] The top wall heater 307 may be considered a heater for heating a first portion 314 of the solid precursor storage container 301 that is closer to the gas inlet port 305 and / or the gas outlet port 306, and the bottom wall heater 309 may be considered a heater for heating a second portion 315 of the solid precursor storage container 301 that is further away from the gas inlet port 305. By providing separately controllable heaters for the first portion 314 and the second portion 315, the temperatures of these portions can be controlled to promote precursor deposition in or near the second portion 315 and to hinder precursor deposition in or near the first portion 314. For example, while the solid precursor storage container 301 is being refilled with a gas precursor, the bottom wall heater 309 may be controlled (e.g., using a bottom wall heater controller 313) to maintain the bottom wall 303 at a temperature lower than the precursor deposition temperature, and the top wall heater 307 may be controlled (e.g., using an top wall heater controller 311) to maintain the top wall 302 at a temperature higher than the precursor deposition temperature. The solid precursor storage container 301 is shown in Figure 3 as containing the solid precursor 316, but the solid precursor 316 may be emptied at a specific point in time, for example, before the first filling or during the refilling process.

[0069] Referring to Figure 4, an example of a process chamber 501 that may be included in the semiconductor processing apparatus 101 is shown in more detail. The present invention is not limited to a semiconductor processing apparatus 101 comprising the specific process chamber 501 shown in Figure 5, and other types of process chambers 501 having similar or different characteristics may be used instead of the process chamber 501 shown in Figure 5. The process chamber 501 may generally be bell jar shaped. The process chamber may be surrounded by heating means such as one or more heat-resistant heating coils 502 powered by a power source (not shown). The heating means provide heat to the process chamber, and the internal volume 503 of the process chamber is then heated. The process chamber may be made of quartz, silicon carbide, silicon or another suitable heat-resistant material.

[0070] The process chamber may be supported at its lower end on the flange 504 to partially close the open end 505 of the process chamber 501. The substrate boat 506 may enter and / or exit the process chamber through a central furnace opening 507 provided in the flange 504. A vertically movable door 508 may be configured to close the central furnace opening 507 and may be configured to support the substrate boat 506. The substrate boat 506 is configured to support a plurality of substrates 509. The substrate boat 506 may be inserted into the process chamber while empty, i.e., without supporting any substrates 509. The substrates 509 may, in some cases, be dummy wafers not intended for further manufacturing. The substrate boat 506 may support, for example, 100, 120, 150, 170, or more than 170 substrates.

[0071] The door 508 may be provided with a base 510. The base 510 may be rotated to rotate the substrate boat 506. The process chamber 501 includes at least one process chamber gas inlet 511 for providing gas inflow into the process chamber. The process chamber gas inlet 511 may be at least partially included in a flange 504. The flange 504 may include a process chamber gas exhaust port 512 for removing gas from the process chamber. The process chamber gas exhaust port 512 may be connected to a vacuum pump 513.

[0072] The process chamber gas inlet 511 may be configured to provide an inflow into one or more process chambers of a process gas (e.g., precursor gas), a purge gas, and a cleaning gas. In some embodiments, a separate process chamber gas inlet 511 may be provided to each of one or more process gases and purge gases, and optionally a cleaning gas.

[0073] The process chamber gas inlet 511 may be provided with an injector 514 constructed and positioned within the process chamber so as to extend vertically along the wall of the process chamber toward a higher end into the internal space of the process chamber. The injector 514 may have an injector opening for injecting gas toward the substrate 509. In some embodiments, the injector 514 may have multiple injector openings distributed along the vertical direction of the injector. In some embodiments, the injector 514 may have a single opening at the upper end of the injector 514, opposite the end of the injector 514 that connects to the process chamber gas inlet 511. In some embodiments, no injector 514 is provided, and the gas flows upward from the process chamber gas inlet 511 without its flow being directed by an injector. In some embodiments, the process chamber gas inlet 511 with an injector may be provided in addition to an additional process chamber gas inlet 511 not connected to an injector.

[0074] One or more thermocouples 515 may be provided inside the process chamber 501 to measure the temperature inside the process chamber 501. Each thermocouple 515 may be provided in a different heating zone of the process chamber 501 corresponding to a respective heating coil 502.

[0075] Referring again to Figure 1, the semiconductor processing apparatus 101 may include a controller 128 configured to control one or more elements of the semiconductor processing apparatus 101. For example, the controller 128 may be configured to control the state of gas flow control valves such as a first gas flow control valve 113, a second gas flow control valve 114, a third gas flow control valve 117, a fourth gas flow control valve 118, a fifth gas flow control valve 119, a sixth gas flow control valve 120, a purge gas flow control valve 124, a second process gas flow control valve 122, and / or their respective heaters. The controller 128 may also be configured to control the top wall heater 307, side wall heater 308, and bottom wall heater 309 of the solid precursor storage containers 301, 107. A top wall heater controller 311 may be included in the controller 128. A side wall heater controller 312 may be included in the controller 128. A bottom wall heater controller 313 may be included in the controller 128. The controller 128 may be configured to control the heating coil 502 of the process chamber 102. The controller 128 may be configured to receive data from various sensors included in the semiconductor processing apparatus 101, such as the process chamber 102, the thermocouple 515 of 501, the pressure transducer 129, the accumulator thermocouple 130, and the differential pressure transducer (described in more detail below), and to control one or more elements of the semiconductor processing apparatus 101 based on the received data. For example, the controller 128 may store in memory a set of instructions for carrying out a method according to an embodiment of the present invention, and such instructions may be loaded into a processor configured to execute the instructions for carrying out the method.

[0076] Referring to Figure 5, a flowchart of a method according to an embodiment of the present invention for providing a precursor gas to the process chamber 102 of a semiconductor processing apparatus 101 is shown. The method includes the steps of: (step S101) allowing a precursor to be received in gaseous form into a first solid precursor storage container 108 of at least two solid precursor storage containers 107 and converting the precursor to a solid state; (step S102) allowing a stored solid precursor to be converted to a gaseous state into a second solid precursor storage container 109 of at least two solid precursor storage containers 107 and providing the gaseous precursor to an accumulator container 106; and (step S103) providing the precursor gas from the accumulator container 106 to the process chamber 102. Steps S101 and S102 are preferably performed simultaneously.

[0077] In step S101, allowing the first solid precursor storage container 108 to receive the precursor in gaseous form may include supplying the precursor gas from the bulk precursor supply unit 110 to the first solid precursor storage container 108. Step S101 may also include setting the third gas flow control valve 117 to the open position. In step S101, the second solid precursor storage container 109 does not need to receive the precursor gas from the bulk precursor supply unit 110, so step S101 may also include setting the fourth gas flow control valve 118 to the closed position.

[0078] In step S101, converting the precursor received in gaseous form into a solid state in the first solid precursor storage container 108 may include maintaining the temperature of the walls of the first solid precursor storage container 108 at a temperature lower than the deposition temperature of the precursor. This causes the precursor to condense on the walls of the first solid precursor storage container 108. The deposited precursor can then be stored in a solid state until it needs to be supplied to the accumulator container 106 in a gaseous state. Storing the precursor in a solid state in the first solid precursor storage container 108 significantly extends the time the precursor can be stored without significant decomposition compared to storing the precursor in a gaseous state. Providing the precursor to the first solid precursor storage container 108 in a gaseous state avoids clogging or contamination problems associated with providing powder or liquid precursors. Step S101 may also include maintaining the temperature of a region of the wall of the first solid precursor storage container 108, such as a region near the gas inlet and / or gas outlet of the first solid precursor storage container 108, at a temperature higher than the deposition temperature of the precursor. This helps to avoid the deposition of precursors at and / or around the inlet and / or outlet, and can reduce the possibility of flow restriction at the inlet and / or outlet. Therefore, the first solid precursor storage container 108 may be equipped with one or more individually controllable heaters configured to heat each area of ​​the wall of the first solid precursor storage container 108.

[0079] In step S102, converting the solid precursor stored in the second solid precursor storage container 109 into a gaseous state may include heating the temperature of the walls of the second solid precursor storage container 109 to a temperature higher than the sublimation temperature of the solid precursor.

[0080] Steps S101 and S102 may be performed substantially simultaneously, i.e., while the first solid precursor storage container 108 undergoes a refilling process by receiving a gaseous precursor and converting it to a solid state, the second solid precursor storage container 109 sublimes the gaseous precursor and provides it to the accumulator container 106. The solid precursor storage container 107 may then switch roles, i.e., while the first solid precursor storage container 108 sublimes the gaseous precursor and provides it to the accumulator container 106, the second solid precursor storage container 109 receives the gaseous precursor and converts it to a solid state. This makes the supply of precursors to the accumulator container 106 continuously available, thereby increasing the throughput of the semiconductor processing apparatus 101.

[0081] Figure 6 shows the state of the gas flow control valves between steps S101 and S102. During the supply of precursor from the bulk precursor supply unit 110 to the first solid precursor storage container 108, the first solid precursor storage container 108 does not supply precursor gas to the accumulator container 106, so the first gas flow control valve 113 is set to the closed state and the third gas flow control valve 117 is set to the open state. During the supply of precursor from the second solid precursor storage container 109 to the accumulator container 106, the second solid precursor storage container 109 does not accept precursor from the bulk precursor supply unit, so the second gas flow control valve 114 is set to the open state and the fourth gas flow control valve 118 is set to the closed state. The fifth gas flow control valve 119, if present, may be set to the open state, and the sixth gas flow control valve 120, if present, may be set to the closed state. The purge gas flow control valve 124 and the second process gas flow control valve 122 may be opened or closed depending on the conditions of the process chamber 102, for example, depending on which stage of the layer deposition process is being carried out. For example, steps S101 and S102 may be performed during the purge gas supply step and / or the second process gas supply step in the layer deposition process.

[0082] Figure 7 shows the state of the gas flow control valves during step S103. When a sufficient amount of gas precursor has accumulated in the accumulator container 106, the sixth gas flow control valve 120 is set to the open state, and the fifth gas flow control valve 119 may be set to the open or closed state. This allows the precursor gas to flow from the accumulator container 106 to the process chamber 102. During step S103, the second process gas flow control valve 122 and the purge gas flow control valve 124 are closed.

[0083] After step S103 is completed, the process may be repeated, i.e., steps S101, S102, and S103 are performed again. Steps S101, S102, and S103 may form part of a deposition process for depositing layers of a desired thickness on multiple substrates 103 in a process chamber 102. The deposition process may include, after repeating steps S101, S102, and S103 multiple times, removing the multiple substrates 103 from the process chamber 102, loading different multiple substrates 103 into the process chamber 102, and a further deposition process for depositing layers of a desired thickness on different multiple substrates 103, including repeating steps S101, S102, and S103.

[0084] The functions of the first solid precursor storage container 108 and the second solid precursor storage container 109 may be swapped. For example, in step S101, the second solid precursor storage container 109 receives the precursor in gaseous form and converts the precursor to a solid state, and in step S102, the first solid precursor storage container 108 converts the stored solid precursor to a gaseous state and provides the gaseous precursor to the accumulator container 106. This swapping of functions may occur when the amount of precursor in the second solid precursor storage container 109, which is the solid precursor storage container supplying the precursor to the accumulator container 106, decreases to an amount that is insufficient to provide the required amount of precursor gas for the required number of repetitions in step S103. For example, in some embodiments, at least two solid precursor storage containers may each be positioned on a load scale to measure the amount of precursor stored, and if the measured amount falls below a threshold, the controller may cause the functions of the first solid precursor storage container 108 and the second solid precursor storage container 109 to be swapped. In some embodiments, the functions of the first solid precursor storage container 108 and the second solid precursor storage container 109 may be automatically exchanged between deposition processes.

[0085] The first solid precursor storage container 108 and the second solid precursor storage container 109 may continue to exchange functions depending on the amount of precursor remaining or between deposition processes. Depending on the amount of precursor required for layer deposition, functions may not be exchanged between all deposition processes.

[0086] In some embodiments, step S103 may include determining the amount of precursor to be supplied to the process chamber 102. For example, the accumulator container 106 may include a pressure transducer 129 for measuring the pressure of the precursor gas in the accumulator container 106 and an accumulator thermocouple 130 for measuring the temperature of the precursor gas contained in the accumulator container 106. Step S103 may include determining the amount of precursor to be supplied to the process chamber 102 based on data received from the pressure transducer 129 and the accumulator thermocouple 130 before and / or during the supply of the precursor to the process chamber 102, for example, by using the law of ideal gases after knowing the internal volume of the accumulator container 106.

[0087] In some embodiments, in step S103, while the precursor gas is being supplied to the process chamber 102, the fifth gas flow control valve 119 is closed, thereby preventing the precursor gas from being supplied to the accumulator container 106 while it is being supplied to the process chamber 102. This can enable very accurate calculation of the amount of precursor supplied to the process chamber 102.

[0088] In some embodiments, in step S103, while the precursor gas is supplied to the process chamber 102, the fifth gas flow control valve 119 is opened, allowing the precursor gas to flow into the accumulator container 106 while it is being supplied to the process chamber 102. This may make it possible to supply a larger quantity or dose of the precursor gas to the process chamber 102.

[0089] For example, referring to Figure 8, in some embodiments, the semiconductor processing apparatus 101 may be equipped with an orifice valve 131, which may be located in the gas flow path between the accumulator container 106 and the process chamber 102, together with a differential pressure transducer 132 for measuring the pressure difference between a point upstream of the orifice valve 131 and a point downstream of the orifice valve 131. This makes it possible to determine the flow rate of the precursor gas, and thus the amount of precursor gas supplied to the process chamber 102 during a particular period of time.

[0090] Referring to Figure 9, a flowchart of the deposition method according to an embodiment of the present invention is shown. The deposition method is carried out using the semiconductor processing apparatus 101 according to an embodiment of the present invention. The deposition method includes the following steps.

[0091] In step S201, while the precursor gas is supplied from the second solid precursor storage container 109 to the accumulator container 106, the first solid precursor storage container 108 is made to accept the gas precursor from the bulk precursor supply unit 110. In step S201, the third gas flow control valve 117 is set to the open state, the fourth gas flow control valve 118 is set to the closed state, the first gas flow control valve 113 is set to the closed state, the second gas flow control valve 114 is set to the open state, the fifth gas flow control valve 119 may be set to the open or closed state, and the sixth gas flow control valve 120 is set to the closed state. This step may be considered a preparation or pre-filling step and may be performed once at the start of a series of iterations of steps S202 to S205.

[0092] In step S202, the precursor gas is supplied from the accumulator container 106 to the process chamber 102, while the first solid precursor storage container 108 receives the gas precursor from the bulk precursor supply unit 110. In step S202, the third gas flow control valve 117 is set to the open state, the fourth gas flow control valve 118 is set to the closed state, the first gas flow control valve 113 is set to the closed state, the second gas flow control valve 114 may be set to the open or closed state, the fifth gas flow control valve 119 may be set to the same state as the second gas flow control valve, and the sixth gas flow control valve 120 is set to the open state. The second process gas flow control valve 122 and the purge gas flow control valve 124 are set to the closed state. By supplying the precursor gas to the process chamber 102, the precursor gas may react with the surfaces of the multiple substrates in a self-limiting manner to form a layer containing the precursor on the surfaces of the multiple substrates in the process chamber 102.

[0093] In step S203, purge gas is supplied to the process chamber 102, while the first solid precursor storage container 108 receives the gas precursor from the bulk precursor supply unit 110, and the second solid precursor storage container 109 supplies the gas precursor to the accumulator container 106. In step S203, the third gas flow control valve 117 is set to the open state, the fourth gas flow control valve 118 is set to the closed state, the first gas flow control valve 113 is set to the closed state, the second gas flow control valve 114 is set to the open state, the fifth gas flow control valve 119 is set to the open state, and the sixth gas flow control valve 120 is set to the closed state. The purge gas flow control valve 124 is set to the open state, and the second process gas flow control valve 122 is set to the closed state. By supplying purge gas to the process chamber 102, any precursor gases remaining in the process chamber 102 from step S202 can be removed from the process chamber 102 via the process chamber gas exhaust port 105.

[0094] In step S204, the second process gas is supplied to the process chamber 102, while the first solid precursor storage container 108 receives the gas precursor from the bulk precursor supply unit 110, and the second solid precursor storage container 109 supplies the gas precursor to the accumulator container 106. In step S204, the third gas flow control valve 117 is set to the open state, the fourth gas flow control valve 118 is set to the closed state, the first gas flow control valve 113 is set to the closed state, the second gas flow control valve 114 is set to the open state, the fifth gas flow control valve 119 is set to the open state, and the sixth gas flow control valve 120 is set to the closed state. The purge gas flow control valve 124 is set to the closed state, and the second process gas flow control valve 122 is set to the open state. By supplying a second process gas to the process chamber 102, the second process gas may react with the surfaces of the multiple substrates to form layers containing components and precursors of the second process gas on the multiple substrates.

[0095] In step S205, purge gas is supplied to the process chamber 102, while the first solid precursor storage container 108 receives the gas precursor from the bulk precursor supply unit 110, and the second solid precursor storage container 109 supplies the gas precursor to the accumulator container 106. In step S205, the third gas flow control valve 117 is set to the open state, the fourth gas flow control valve 118 is set to the closed state, the first gas flow control valve 113 is set to the closed state, the second gas flow control valve 114 is set to the open state, the fifth gas flow control valve 119 is set to the open state, and the sixth gas flow control valve 120 is set to the closed state. The purge gas flow control valve 124 is set to the open state, and the second process gas flow control valve 122 is set to the closed state. By supplying purge gas to the process chamber 102, any second process gases remaining in the process chamber 102 from step S204 can be removed from the process chamber 102 via the process chamber gas exhaust port 105.

[0096] The method may include repeating steps S202 to S205 until a layer of the desired thickness is formed on a plurality of substrates 103 in the process chamber 102. Once a layer of the desired thickness is formed on a plurality of substrates 103 in the process chamber 102, the method may include performing a substrate exchange procedure, which includes cooling the process chamber 102 to the discharge temperature; removing the plurality of substrates 103 from the process chamber 102; dischargeing the plurality of substrates 103 from the substrate boat; loading a different plurality of substrates 103 into the substrate boat; loading the substrate boat into the process chamber 102; pumping down the process chamber 102; stabilizing the temperature of the process chamber 102; and repeating steps S201 to S205 to deposit a layer of the required thickness on a different plurality of substrates 103. Step S201 may be performed during the substrate exchange procedure.

[0097] The method may include, for example, using a load cell to monitor the amount of precursor in the solid precursor storage container supplying the accumulator container 106, and, if the amount falls below a threshold, switching the functions of the first solid precursor storage container 108 and the second solid precursor storage container 109. The controller 128 may be configured to perform such monitoring and control, for example, by receiving a measurement from the load cell, comparing the received measurement with a threshold, and, if the received measurement falls below the threshold, switching the functions of the first solid precursor storage container 108 and the second solid precursor storage container 109, for example, by controlling the gas flow control valve and heater of the solid precursor storage container.

[0098] The precursor may include, for example, molybdenum oxychloride, hafnium chloride, or molybdenum chloride. The second process gas may include, for example, hydrogen, ammonia, ozone, or water vapor. The purge gas may include, for example, nitrogen or argon. In some embodiments, the precursor includes molybdenum oxychloride, the second process gas includes ammonia, and the purge gas includes hydrogen. In some embodiments, the precursor includes molybdenum oxychloride, the second process gas includes hydrogen, and the purge gas includes argon.

[0099] The method may include providing a plurality of substrates in a substrate boat in the semiconductor processing apparatus 101 prior to step S201.

[0100] For the purpose of summarizing the advantages of the present invention over the prior art, certain objectives and advantages of the present invention are described above herein. Naturally, it will be understood that not all of these objectives or advantages are necessarily achieved according to any particular embodiment of the present invention. Therefore, those skilled in the art will recognize that the present invention may be embodied or practiced in a manner that achieves or optimizes one or a group of advantages as taught or suggested herein, without necessarily achieving other objectives or advantages that may be taught or suggested herein.

[0101] All of these embodiments are intended to be within the scope of the present invention disclosed herein. These and other embodiments will be readily apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, but the present invention is not limited to any particular embodiment disclosed. [Explanation of Symbols]

[0102] 101 Semiconductor Processing Equipment 102 Process Chamber 103 Base material 104 Process Chamber Gas Inlet 105 Process Chamber Gas Exhaust Port 106 Accumulator container 107 Solid Precursor Storage Container 108 First Solid Precursor Storage Vessel 109 Second Solid Precursor Storage Container 110 Bulk Precursor Supply Unit 111 First Gas Line 112 Second gas line 113 First gas flow control valve 114 Second gas flow control valve 115 Third gas line 116. The fourth gas line 117 Third gas flow control valve 118. Fourth gas flow control valve 119 Fifth gas flow control valve 120 Sixth gas flow control valve 121 Second process gas source 122 Second process gas flow control valve 123 Purge gas source 124 Purge gas flow control valve 125 Enclosure 126 Enclosure Heater 127 Fifth Gas Line 128 controllers 129 Pressure transducer 130 Accumulator Thermocouple 131 Orifice valve 132 Differential pressure converter 301 Solid Precursor Storage Container 302 Upper wall 303 Bottom wall 304 Side wall 305 Gas Inlet Port 306 Gas Outlet Port 307 Upper wall heater 308 Side wall heater 309 Bottom wall heater 310 Solid Precursor Storage Container Controller 311 Upper wall heater controller 312 Sidewall Heater Controller 313 Bottom Wall Heater Controller 314 Part 1 315 Part 2 316 Solid Precursors 501 Process Chamber 502 Heating coil 503 Internal volume 504 Flange 505 Open end 506 Base material boat 507 Central reactor opening 508 Doors 509 Base material 510 Base 511 Process Chamber Gas Inlet 512 Process Chamber Gas Exhaust Port 513 Vacuum pump 514 Injector 515 Thermocouple

Claims

1. A semiconductor processing device, A process chamber configured to accept multiple substrates, An accumulator container configured to be in fluid communication with the process chamber and to store the precursor in gaseous form, The invention comprises at least two solid precursor storage containers, each configured to receive a precursor in a gaseous state, convert the received gaseous precursor into a solid state within the respective solid precursor storage container, and convert the solid state precursor into a gaseous state, A semiconductor processing apparatus in which each of the at least two solid precursor storage containers is in fluid communication with the accumulator container to enable the supply of a gaseous precursor to the accumulator container.

2. The semiconductor processing apparatus according to claim 1, wherein each of the at least two solid precursor storage containers is in fluid communication with a bulk precursor supply unit for providing the precursor in gaseous form.

3. The semiconductor processing apparatus according to claim 2, wherein each of the at least two solid precursor storage containers is equipped with its own heater.

4. The semiconductor apparatus according to claim 3, wherein each of the at least two solid precursor storage containers is provided with a gas inlet port configured to guide a gaseous precursor into the respective solid precursor storage container.

5. A first gas line for providing a fluid connection between the first solid precursor storage container and the accumulator container of the at least two solid precursor storage containers, A second gas line for providing a fluid connection between the second solid precursor storage container and the accumulator container of the at least two solid precursor storage containers, A first gas flow control valve is installed in the first gas line, and a second gas flow control valve is installed in the second gas line, The semiconductor processing apparatus according to claim 4, further comprising a controller configured to set the second gas flow control valve to an open state substantially simultaneously with setting the first gas flow control valve to a closed state.

6. A bulk precursor supply unit for providing a gaseous precursor and a third gas line for providing a fluid connection between the first solid precursor storage container of the at least two solid precursor storage containers, A fourth gas line for providing a fluid connection between the bulk precursor supply unit and the second solid precursor storage container of the at least two solid precursor storage containers, A third gas flow control valve is installed in the third gas line, and a fourth gas flow control valve is installed in the fourth gas line, The semiconductor processing apparatus according to claim 5, further comprising a controller configured to set the fourth gas flow control valve to a closed state substantially simultaneously with setting the third gas flow control valve to an open state.

7. The semiconductor processing apparatus according to claim 6, further comprising a third gas flow control valve heater for heating the third gas flow control valve and a fourth gas flow control valve heater for heating the fourth gas flow control valve.

8. The semiconductor processing apparatus according to claim 7, wherein the accumulator container is equipped with an accumulator container heater.

9. The semiconductor apparatus according to claim 8, further comprising: a fifth gas flow control valve disposed upstream of the accumulator container and configured to control the gas flow from any of the at least two solid precursor storage containers into the accumulator container; and a fifth gas flow control valve heater.

10. The semiconductor processing apparatus according to claim 9, further comprising: a sixth gas flow control valve disposed downstream of the accumulator container and configured to control the gas flow from the accumulator container into the process chamber; and a sixth gas flow control valve heater.

11. The semiconductor apparatus according to claim 10, comprising an enclosure surrounding at least a portion of the semiconductor apparatus located between a bulk precursor supply unit and the process chamber, and an enclosure heater for heating the inside of the enclosure.

12. A method for supplying a precursor gas to a process chamber of a semiconductor processing apparatus, wherein the semiconductor processing apparatus comprises a process chamber configured to accept a plurality of substrates, An accumulator container configured to be in fluid communication with the process chamber and to store the precursor in gaseous form, The invention comprises at least two solid precursor storage containers, each configured to receive a precursor in a gaseous state, convert the received gaseous precursor into a solid state within the respective solid precursor storage container, and convert the solid state precursor into a gaseous state, Each of the at least two solid precursor storage containers is in fluid communication with the accumulator container so as to enable the supply of a gas phase precursor to the accumulator container. The method described above is i) A step of receiving the precursor in a gaseous state into the first solid precursor storage container of the at least two solid precursor storage containers, and converting the precursor into a solid state, ii) The step of converting the solid precursor into a gaseous state in the second solid precursor storage container of the at least two solid precursor storage containers, and providing the gaseous precursor to the accumulator container, iii) A method comprising the step of supplying a precursor gas from the accumulator container to the process chamber.

13. The method according to claim 12, wherein steps i) and ii) are carried out substantially simultaneously.

14. The method according to claim 13, wherein steps ii) and iii) do not substantially overlap in time.

15. The method according to claim 12, further comprising the steps of: after step iii), causing the second solid precursor storage container to accept a gaseous precursor and converting the precursor into a solid state; and causing the first solid precursor storage container to convert the solid precursor into a gaseous state and provide the gaseous precursor to the accumulator container.

16. The method according to claim 12, wherein causing a solid precursor storage container to accept a gaseous precursor includes causing a bulk precursor supply unit to supply the gaseous precursor to the solid precursor storage container.

17. The method according to claim 12, wherein the accumulator container comprises a pressure transducer and a thermocouple, and step iii) determines the amount of precursor to be supplied to the process chamber based on data received from the pressure transducer and the thermocouple.

18. The method according to claim 12, wherein step iii) includes closing the input port of the accumulator container so that no further precursor gas is supplied to the accumulator container while the precursor gas is being supplied to the process chamber.

19. The method according to claim 12, wherein step iii) is to keep the input port of the accumulator container open so that the precursor gas is supplied to the accumulator container while the precursor gas is supplied to the process chamber.

20. A method for forming layers on multiple substrates using the semiconductor processing apparatus described in claim 1, The steps include: allowing the first solid precursor storage container of the at least two solid precursor storage containers to receive a gas precursor from a bulk precursor supply unit, while supplying a precursor from the second solid precursor storage container of the at least two solid precursor storage containers to the accumulator container; The steps include providing a precursor from the accumulator container to the process chamber, while simultaneously allowing the first solid precursor storage container to receive a gas precursor from the bulk precursor supply unit, The steps include providing a purge gas to the process chamber, while simultaneously causing the first solid precursor storage container to receive a gas precursor from the bulk precursor supply unit, and causing the second solid precursor storage container to supply the gas precursor to the accumulator container, The steps include providing a second process gas to the process chamber, while simultaneously causing the first solid precursor storage container to receive a gas precursor from the bulk precursor supply unit, and causing the second solid precursor storage container to supply the gas precursor to the accumulator container, A method comprising the steps of supplying a purge gas to the process chamber, while causing the first solid precursor storage container to receive a gas precursor from the bulk precursor supply unit, and causing the second solid precursor storage container to supply the gas precursor to the accumulator container.

Images