Element substrate and module using the same

Abstract

In an element substrate provided with slits to suppress the extension of peeling of the sealing layer during dicing, the peeling of the sealing layer after dicing is suppressed. [Solution] In an element substrate 1 having an effective element region 1 and a peripheral region 2 arranged around the effective element region 1, a slit 18 is provided in the sealing layer 16 along the edge of the substrate in a plan view, and a resin layer 19 is placed in the slit 18.

Description

Technical Field

[0001] The present disclosure relates to an element substrate such as a semiconductor element or a display element, and a module in which a circuit board is bonded on the element substrate.

Background Art

[0002] An element substrate for imaging or display has elements, wiring layers, and a sealing layer on the substrate to suppress the intrusion of moisture and oxygen into the elements. When dicing a wafer to cut and separate it into individual element substrates, the sealing layer may peel off from the end of the element substrate, impairing the sealing performance. Patent Document 1 proposes providing a slit in which the sealing layer is removed in the vicinity of the end of the element substrate.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] By providing a slit in which the sealing layer is removed in the vicinity of the end of the element substrate, the extension of the peeling of the sealing layer during dicing can be suppressed. However, when an external force or impact is applied to the slit of the sealing layer, the sealing layer or the insulating layer under the sealing layer may peel off starting from the slit, reducing the yield.

Means for Solving the Problems

[0005] Some aspects of the present disclosure are an element substrate having, on one main surface side, an active element region having a plurality of functional elements and a peripheral region located around the active element region, The element substrate has a wiring layer electrically connected to the functional element, an external connection terminal, and a sealing layer covering the functional element and the wiring layer. The sealing layer has a slit at least between the external connection terminal and the end of the element substrate. This invention relates to an element substrate in which resin is disposed in the aforementioned slit. Some other aspects of the present disclosure relate to a module having an element substrate of the first aspect described above and a circuit board bonded to the external connection terminals of the element substrate via a bonding member. [Effects of the Invention]

[0006] According to some aspects of this disclosure, it is possible to suppress the peeling of the sealing layer or insulating layer from the slit and improve the yield. [Brief explanation of the drawing]

[0007] [Figure 1] This figure shows the configuration of a first embodiment of the module of the present disclosure, where (a) is a schematic plan view and (b) is a schematic cross-sectional view of the A-A' region in (a). [Figure 2] Figure 1 is a schematic cross-sectional diagram illustrating the manufacturing process of the element substrate of the module. [Figure 3] This figure shows the configuration of a second embodiment of the module of the present disclosure, where (a) is a schematic plan view and (b) is a schematic cross-sectional view of the A-A' portion in (a). [Figure 4] Figure 3 is a schematic cross-sectional diagram illustrating the manufacturing process of the element substrate of the module. [Figure 5] This figure shows the configuration of a third embodiment of the module of the present disclosure, where (a) is a schematic plan view and (b) is a schematic cross-sectional view of the A-A' portion in (a). [Figure 6] This figure shows the configuration of a fourth embodiment of the module of the present disclosure, where (a) is a schematic plan view and (b) is a schematic cross-sectional view of the A-A' region in (a). [Figure 7] (a) A schematic cross-sectional view showing an example of a pixel of a display device according to one embodiment of the present disclosure. (b) A schematic cross-sectional view of an example of a display device according to one embodiment of the present disclosure. [Figure 8] This is a schematic diagram showing an example of a display device according to one embodiment of the present disclosure. [Figure 9] (a) A schematic diagram showing an example of an imaging device according to one embodiment of the present disclosure. (b) A schematic diagram showing an example of an electronic device according to one embodiment of the present disclosure. [Figure 10] (a) A schematic diagram showing an example of a display device according to one embodiment of the present disclosure. (b) A schematic diagram showing an example of a foldable display device. [Figure 11] This is a schematic diagram showing an example of a lighting device according to one embodiment of the present disclosure. [Figure 12] (a) A schematic diagram showing an example of an automobile having a vehicle light fixture according to one embodiment of the present disclosure. (b) A schematic diagram showing an example of an automobile having a vehicle light fixture according to one embodiment of the present disclosure. [Figure 13] (a) A schematic diagram showing an example of a wearable device according to one embodiment of the present disclosure. (b) A schematic diagram showing an example of a wearable device according to one embodiment of the present disclosure, which has an imaging device. [Figure 14] (a) A schematic diagram showing an example of an image forming apparatus according to one embodiment of the present disclosure. (b) A schematic diagram showing an example of an exposure light source for an image forming apparatus according to one embodiment of the present disclosure. (c) A schematic diagram showing an example of an exposure light source for an image forming apparatus according to one embodiment of the present disclosure. [Modes for carrying out the invention]

[0008] The embodiments for implementing this disclosure will be described below with reference to the drawings. In the following description and drawings, common reference numerals are used for components common to multiple drawings. Therefore, common components will be explained by referring to multiple drawings, and explanations of components with common reference numerals will be omitted as appropriate.

[0009] [First Embodiment] FIG. 1 is a schematic diagram for explaining a first embodiment of a module including an element substrate. FIG. 1(a) is a plan schematic diagram when the module is viewed in plan with respect to the main surface, and FIG. 1(b) shows a cross-sectional schematic diagram at the A-A' portion in FIG. 1(a). In the present disclosure, the arrangement in plan view means the arrangement when the module is viewed from a direction perpendicular to the main surface of the module (the normal direction of the main surface), and for overlapping members, it is assumed that they can be seen through. Also, for convenience, in FIG. 1(a), only a main part of the members shown in FIG. 1(b) are illustrated, and other members are omitted. The same applies to FIGS. 3, 5, and 6 described later.

[0010] The module of the present embodiment is composed of an element substrate 10 and a circuit substrate 20, and the circuit substrate 20 is joined to the element substrate 10. The element substrate 10 has an active element region 1 in which a semiconductor element 12 and a functional element 15 are provided on one main surface side of a substrate 11, and a peripheral region 2 located around the active element region 1. The active element region 1 is quadrilateral, and the diagonal length of the active element region 1 is, for example, 5 mm to 50 mm. The peripheral region 2 may include a peripheral circuit region (not shown) in which peripheral circuits are arranged. For example, when the element substrate 10 is a display substrate, the peripheral circuits include a drive circuit for driving active pixels and a processing circuit such as a DAC (digital-to-analog conversion circuit) that processes signals input to the active pixels. The peripheral region 2 is located outside the active element region 1 and may include a non-active element region (not shown) in which non-active elements are provided. Non-active elements are dummy elements, reference elements, test elements, monitor elements, etc. that do not function as active elements.

[0011] The peripheral region 2 includes a terminal region provided with a plurality of external connection terminals 17 for joining to the circuit substrate 20. A slit 18 is provided in the peripheral region 2 in the sealing layer 16 described later, and a resin layer 19 is arranged at least in a part of the slit 18. From the viewpoint of suppressing peeling of the sealing layer 16, it is preferable that the slit 18 is formed linearly and continuously so as to surround the outermost periphery of the element substrate 10 in plan view, but it may be formed intermittently such as in a broken line shape.

[0012] An external connection terminal 17 is provided between the active element region 1 and the slit 18. A semiconductor element 12 is disposed in the active element region 1 of the element substrate 10, and an insulating layer 13 covering the semiconductor element 12, a wiring layer 14 disposed inside the insulating layer 13, a functional element 15 provided on the insulating layer 13, and a sealing layer 16 covering the functional element 15 are provided.

[0013] The functional element 15 is a solid-state imaging device, a display element, a photoelectric conversion element, etc. In FIG. 1(b), the positions in the case where the functional element 15 is a display element or a photoelectric conversion element are shown. When the functional element 15 is a solid-state imaging device, the functional element 15 is provided between the insulating layer 13 and the substrate 11 in the same manner as the semiconductor element 12, and at least a part of the functional element 15 is provided in the substrate 11. When the functional element 15 is a display element, it is an EL element in an ELD (electroluminescence display), a liquid crystal element in an LCD (liquid crystal display), or a reflection element in a DMD (digital mirror device).

[0014] The sealing layer 16 is provided on the functional element 15 in the active element region 1 and on the insulating layer 13 in the peripheral region 2. The sealing layer 16 may be a single layer if it is an insulating film, or may have a laminated structure of a plurality of insulating films. Considering the moisture and oxygen blocking performance for the functional element 15, the thickness of the sealing layer 16 is preferably 1 μm or more, and considering the removal time of the sealing layer in the formation process of the slit 18 described later, it is preferably 10 μm or less.

[0015] An external connection terminal 17 and a peripheral circuit (not shown) are provided in the peripheral region 2 of the element substrate 10. An opening is provided in the insulating layer 13 and the sealing layer 16 above the external connection terminal 17, and the circuit board 20 is joined to the exposed external connection terminal 17 via a joining member 21.

[0016] A slit 18 is provided in the sealing layer 16, and the sealing layer 16 is completely removed at the slit 18, exposing the insulating layer 13 at the bottom of the slit 18. By providing a slit 18 in the sealing layer 16, when the element substrate 10 is diced from the wafer to form individual pieces, the impact during dicing can suppress the peeling of the sealing layer 16 from the edge of the element substrate 10 onto the insulating layer 13 and the progression of peeling to the effective element region 1. From the viewpoint of suppressing the extension of peeling of the sealing layer 16 from the edge of the element substrate 10, it is preferable to provide the slit 18 near the edge of the element substrate 10. The width of the slit 18 is, for example, 0.5 μm to 100 μm, and is preferably 3 μm or more considering the damming effect of the resin layer 19 in the third embodiment described later, but is preferably 10 μm or less from the viewpoint of miniaturizing the peripheral region 2.

[0017] A resin layer 19 is placed in the slit 18, and at least the side surface of the slit 18 closer to the effective element region 1 is covered with the resin layer 19. By covering the side surface of the slit 18 with the resin layer 19, peeling of the sealing layer 16 from the slit 18 can be suppressed when an external force is applied to the slit 18 during the module assembly process. Furthermore, if the metal pattern inside the insulating layer 13 is exposed at the opening of the slit 18, providing the resin layer 19 in the slit 18 can suppress corrosion and dissolution of the metal pattern. Figure 1 shows a single slit 18, but by forming two or more slits 18 at a desired distance apart, peeling of the sealing layer 16 can be suppressed more effectively. When forming two or more slits 18, it is sufficient to provide the resin layer 19 in at least the slit 18 closer to the effective element region 1, but it is more preferable to provide the resin layer 19 so that it covers all two or more slits in order to suppress peeling of the sealing layer 16 between the slits. As described above, the element substrate of this embodiment has slits 18 in the sealing layer 16, which suppresses the stretching and peeling of the sealing layer 16 during dicing. Furthermore, by placing a resin layer 19 in the slits of the sealing layer 16, it is possible to suppress the peeling of the sealing layer 16 from the slits 18 during the assembly process and improve the yield.

[0018] Next, the manufacturing process when the functional element 15 is an organic light-emitting element (also called an organic electroluminescent element or organic EL element) will be explained using Figure 2. As shown in Figure 2(a), a semiconductor element 12 is first placed on a substrate 11. The substrate 11 is made of a semiconductor such as single-crystal silicon. The semiconductor element 12 is a transistor or a diode, and at least a part of it is placed inside the substrate 11. An insulating layer 13 is placed on top of the semiconductor element 12. The insulating layer 13 includes multiple insulating layers, such as a silicon oxide layer, a silicon nitride layer, and a silicon carbide layer. Note that silicon oxynitride and silicon carbonitride are considered types of silicon nitride because their main elements are nitrogen and silicon.

[0019] Inside the insulating layer 13 are a wiring layer 14 and external connection terminals 17. The wiring layer 14 includes a multilayer wiring layer made of metal materials such as aluminum and copper, as well as via plugs and contact plugs. To suppress metal diffusion into the insulating layer 13, a barrier metal such as Ti, Ta, TiN, or TaN may be provided at the interface between the insulating layer 13 and the wiring layer 14. The external connection terminals 17 may be made of the same layer as the wiring layer 14.

[0020] Next, as shown in Figure 2(b), an organic light-emitting element 31 is provided on the insulating layer 13 in the effective element region 1. The organic light-emitting element 31 is electrically connected to at least the wiring layer 14 via through-holes (not shown), and is further electrically connected to a semiconductor element 12 for driving the organic light-emitting element 31 via the wiring layer 14. The organic light-emitting element 31 consists of a pixel electrode, a counter electrode, and an organic light-emitting layer (not shown) provided between the pixel electrode and the counter electrode. A pixel isolation layer (not shown) is provided between adjacent organic light-emitting elements 31 to suppress short circuits between elements due to the step difference in the pixel electrode. A hole injection layer and a hole transport layer may be formed between the organic light-emitting layer and the pixel electrode to facilitate the injection and transport of holes from the pixel electrode. An electron transport layer and an electron injection layer may also be formed between the organic light-emitting layer and the counter electrode to facilitate the injection and transport of electrons from the counter electrode.

[0021] Next, a sealing layer 16 is provided on the organic light-emitting element 31 to seal it from moisture and oxygen. The sealing layer 16 can be a single layer or a laminated structure of multiple insulating films, as long as it is an insulating film. Since it is necessary to form slits 18 in the sealing layer 16 in a later step, it is preferable to use silicon nitride, which can be processed by dry etching to form the slits 18 and has high moisture barrier performance. A color filter layer, lens structure, etc. (not shown) can also be provided on the sealing layer 16 as appropriate.

[0022] Next, as shown in Figure 2(c), a slit 18 is formed in the sealing layer 16 by a method such as dry etching. In addition, a hole 32 is formed in the sealing layer 16 and insulating layer 13 above the external connection terminal 17 by a method such as dry etching, exposing the external connection terminal 17. The etching to form the hole 32 and the etching to form the slit 18 may be performed in the same process.

[0023] Next, as shown in Figure 2(d), a resin layer 19 is placed in the slit 18. It is desirable that the resin layer 19 be provided so as to cover at least the side surface of the slit 18 that is closest to the effective element region 1. The resin layer 19 can be made of any resin material such as acrylic resin, epoxy resin, urethane resin, or silicone resin, and is formed to cover the slit 18 by methods such as dispensing or screen printing. Using a UV-curable resin as the resin layer 19 is preferable because it shortens the resin layer curing time. By covering the side surface of the slit 18 that is closest to the effective element region 1 with the resin layer 19, it is possible to suppress the occurrence and progression of peeling of the sealing layer 16 from the side surface of the slit 18.

[0024] In Figure 2(d), the resin layer 19 does not completely cover the inside of the slit 18. However, it is preferable to form the resin layer 19 so as to fill the inside of the slit 18, as this allows moisture to penetrate from the slit 18 and suppresses corrosion and leaching of the metal pattern provided inside the insulating layer 13.

[0025] Next, as shown in Figure 2(e), the external connection terminals 17 exposed in the hole 32 and the circuit board 20 are electrically joined via a bonding member 21. Here, the circuit board 20 is, for example, a flexible printed circuit board (FPC), and the bonding member 21 is an anisotropic conductive resin (ACF) or solder bumps. The anisotropic conductive resin contains conductive particles in a binder of thermosetting epoxy resin or acrylic resin. By thermocompressing the circuit board 20 to the external connection terminals 17 via the anisotropic conductive resin, conductive particles are sandwiched between the terminals and cured and fixed, thereby enabling electrical conductivity. As the bonding member 21, Au wire or Cu wire may also be used, and the external connection terminals 17 and the circuit board 20 may be electrically joined with such wire. The organic EL display module of this embodiment is completed through the above steps.

[0026] [Second Embodiment] Another embodiment of the module will be described using Figure 3. Since the configuration, functions, materials, effects, etc., are the same as in the first embodiment, redundant explanations will be omitted. Figure 3 is a schematic diagram illustrating a second embodiment of the module, which includes an element substrate. Figure 3(a) is a schematic plan view of the module as seen from the main surface, and Figure 3(b) is a schematic cross-sectional view of the A-A' region in Figure 3(a).

[0027] In the second embodiment, the slit 18 is provided extending from the upper surface of the sealing layer 16 to partway down the insulating layer 13. From the viewpoint of suppressing peeling of the sealing layer 16, it is preferable that the slit 18 be formed linearly and continuously so as to surround the outermost periphery of the element substrate 10 in a plan view, but it may also be formed intermittently, such as in a dashed line.

[0028] In the slit 18, a portion of the sealing layer 16 and the insulating layer 13 is removed, and the bottom of the slit 18 is located inside the insulating layer 13. By providing a slit 18 that reaches from the sealing layer 16 to the inside of the insulating layer 13, when the element substrate 10 is diced from the wafer to form individual pieces, it is possible to suppress the peeling of the sealing layer 16 and insulating layer 13 from the edges of the element substrate 10 due to the impact during dicing, and the peeling progressing to the effective element region 1. To control the depth of the slit 18, it is preferable to provide an etching stopper film 30 inside the insulating layer 13 at the location where the slit 18 is provided. The etching stopper film 30 can be formed from the same layer as the wiring layer 14, so as not to increase the number of steps. The position, shape, and dimensions of the slit 18 are the same as in the first embodiment. Similar to the first embodiment, a resin layer 19 is provided in the slit 18. The form of the resin layer 19 is the same as in the first embodiment.

[0029] Next, the manufacturing process when the functional element 15 is an organic light-emitting element will be explained using Figure 4. As shown in Figure 4(a), a semiconductor element 12 is first placed on a substrate 11. The substrate 11 is made of a semiconductor such as single-crystal silicon. The semiconductor element 12 is a transistor or a diode, and at least a part of it is placed inside the substrate 11. An insulating layer 13 is placed on top of the semiconductor element 12. The insulating layer 13 includes multiple insulating layers and consists of silicon oxide layers, silicon nitride layers, silicon carbide layers, low-dielectric constant silicon oxide (SiOC), silicon SiOF, organic polymers, etc. Note that silicon oxynitride and silicon carbonitride are considered types of silicon nitride because their main elements are nitrogen and silicon.

[0030] Inside the insulating layer 13 are a wiring layer 14 including a first wiring layer 14a and a second wiring layer 14b, an external connection terminal 17, and an etching stopper film 30. The first wiring layer 14a and the second wiring layer 14b are multilayer wiring layers made of metal members such as aluminum and copper, and include via plugs and contact plugs. To suppress metal diffusion into the insulating layer 13, a barrier metal such as Ti, Ta, TiN, or TaN may be provided at the interface between the insulating layer 13 and the first wiring layer 14a and the second wiring layer 14b. The external connection terminal 17 and the etching stopper film 30 may be conductive layers made of the same layers as the first wiring layer 14a and the second wiring layer 14b. When the etching stopper film 30 is formed from the same layers as the wiring layers 14a and 14b, one or more combinations of aluminum, copper, titanium, and titanium nitride can be used as the material for the layer. In this embodiment, the etching stopper film 30 is formed in the same layer as the first wiring layer 14a, and the external connection terminal 17 is formed in the same layer as the second wiring layer 14b. However, it may also be formed in the same layer as the layer constituting the capacitive element (not shown). Specific layers constituting the capacitive element that can be used as the etching stopper film 30 may be, for example, a single layer or laminate of titanium nitride, zirconium oxide, or aluminum oxide. The etching stopper film 30 may be provided in a layer separate from the wiring layer 14 and the capacitive element. When the etching stopper film 30 is provided in a layer separate from the wiring layer 14, any material can be used as long as it has a high etching selectivity ratio when forming slits in the insulating layer 13. For example, when silicon oxide is used as the insulating layer 13, an insulating layer having an insulator such as silicon nitride, silicon carbide, or aluminum oxide may be used as the etching stopper film 30, or a conductive layer such as aluminum nitride or silicon may be used. A transparent conductive film such as ITO can also be used. Therefore, an insulating layer functioning as the etching stopper film 30 may be arranged inside the insulating layer 13.

[0031] Next, as shown in Figure 4(b), an organic light-emitting element 31 is provided on the insulating layer 13 in the effective element region 1. The organic light-emitting element 31 is electrically connected to at least the wiring layer 14a or 14b via through-holes (not shown), and is further electrically connected to the semiconductor element 12 for driving the organic light-emitting element 31 via the wiring layers 14a and 14b.

[0032] Next, similar to the first embodiment, a sealing layer 16 is provided on the organic light-emitting element 31 to seal the organic light-emitting element 31 from moisture and oxygen.

[0033] Next, as shown in Figure 4(c), a slit 18 is formed from the surface of the sealing layer 16 to the interior of the insulating layer 13 by a method such as dry etching. In addition, a hole 32 is formed in the sealing layer 16 and insulating layer 13 above the external connection terminal 17 by a method such as dry etching, exposing the external connection terminal 17. The etching to form the hole 32 and the etching to form the slit 18 may be performed in the same process. At this time, an etching stopper film 30 made of a metal material such as aluminum or copper, similar to the wiring layer 14a, is laid on the bottom surface of the slit 18. When the slit 18 is processed by dry etching using etching gases such as CF4, C4F8, and CH2F2, aluminum and copper are hardly etched, so the etching of the slit 18 can be stopped at the surface of the etching stopper film 30. In other words, the slit 18 can be formed to a uniform depth so that the bottom of the slit 18 contacts the surface of the etching stopper film 30. In this embodiment, the etching stopper film 30 is formed in the same layer as the first wiring layer 14a, but it may also be formed in the same layer as the second wiring layer 14b. When the insulating layer 13 has a laminated structure of multiple film types, it is desirable that the slit 18 be provided so as to penetrate at least the film with the lowest adhesion. Generally, low-k films are porous materials and often have low adhesion to the upper and lower insulating layers, making them prone to peeling at the interface between the low-k film and the upper and lower layers during dicing. For example, when a low-k film is used as the insulating layer between the first wiring layer 14a and the second wiring layer 14b, the etching stopper film 30 is formed in the same layer as the first wiring layer 14a in the region where the slit 18 is provided, and the slit 18 is formed to extend from the surface of the sealing layer 16 through the low-k film constituting the insulating layer 13 to the surface of the etching stopper film 30. This allows the slit 18 to suppress the expansion of peeling even if peeling progresses at the interface of the low-k film from the edge of the element substrate during dicing. On the other hand, if the slit 18 penetrates the entire insulating layer 13 and extends to the substrate 11, the substrate 11 is exposed to the external environment, which may cause chemical substances and metal elements from the external environment to adhere to the surface of the substrate 11, potentially leading to corrosion of the substrate surface or diffusion of metal elements into the semiconductor element region, degrading the characteristics of the semiconductor element. Therefore, it is preferable to leave the insulating layer 13 between the slit 18 and the substrate 11.

[0034] Next, as shown in Figure 4(d), the resin layer 19 is placed in the slit 18 in the same manner as in the first embodiment. Furthermore, as shown in Figure 4(e), the external connection terminals 17 exposed in the hole 32 and the circuit board 20 are electrically joined via the joining member 21, similar to the first embodiment. The organic EL display module of this embodiment is completed through the above steps.

[0035] [Third Embodiment] Another embodiment of the module will be described using Figure 5. Since the configuration, functions, materials, effects, etc., are the same as in the first embodiment, redundant explanations will be omitted. Figure 5 is a schematic diagram illustrating a third embodiment of the module, which includes an element substrate. Figure 5(a) is a schematic plan view of the module as seen from the main surface, and Figure 5(b) is a schematic cross-sectional view of the A-A' region in Figure 5(a).

[0036] In the third embodiment, a second substrate 34 is bonded to the element substrate 10 via resin layers 19 and 19' so as to face the functional element 15. The resin layer 19 is positioned so as to cover at least a portion of the slits 18 provided in the sealing layer 16, even in areas where the second substrate 34 is not superimposed. Bonding the second substrate 34 with the resin layer 19 is preferable because it eliminates the need for an additional adhesive formation step for bonding the second substrate 34. When bonding the second substrate 34, the resin layer 19 will spread beyond its width at the time of application, but the spreading of the resin layer 19 is blocked by the slits 18, preventing the resin layer 19 from protruding beyond the edge of the element substrate 10. In other words, the slits 18 can be used to position the outer edge of the adhesive. In areas without slits 18, a resin layer 19' made of the same material as the resin layer 19 may be placed.

[0037] In this embodiment, a guard ring 33 is provided in the peripheral region 2 of the element substrate 10, penetrating the insulating layer 13. The guard ring 33 consists of multiple wiring layers and via plugs and contact plugs connecting the wiring layers, and is formed vertically so as to penetrate the insulating layer 13. The guard ring 33 is provided to suppress moisture, oxygen, and other substances from penetrating the insulating layer 13 from the edge of the element substrate 10 and reaching the semiconductor element 12 or functional element 15, thereby degrading the element characteristics. In this embodiment, the peripheral region 2 can be miniaturized by providing slits 18 in the sealing layer 16 so as to overlap with the guard ring 33 in a plan view, and the guard ring 33 can be used as an etching stopper layer when forming the slits 18 by etching, which is preferable.

[0038] Furthermore, in this embodiment, at the corners of the element substrate 10 in the region where the second substrate 34 overlaps, an inclined portion 18' is provided at the inner circumferential corner of the slit 18 in a plan view. In other words, the width of the slit 18 at the corners of the element substrate 10 is wider than the width of the slit 18 at other points. When the second substrate 34 is bonded to the element substrate 10 using the resin layer 19 as an adhesive, the resin layer 19 will spread beyond its width at the time of application. However, the amount of resin layer 19 applied may be greater at the pattern corners of the resin layer 19, and the spread of the resin layer 19 tends to be greater there compared to the straight sections. Therefore, by providing an inclined portion 18' at the inner circumferential corner of the slit 18, the volume of the slit 18 at the corners is increased, and the resin layer 19 extending outside the slit 18 and overflowing beyond the edge of the element substrate 10 can be more effectively suppressed.

[0039] In Figure 5, the same resin layer 19 is placed in the slit 18 in the region overlapping with the second substrate 34 and in the slit 18 in the region not overlapping with the second substrate 34, but different resins may be used for each. For example, in the region overlapping with the second substrate 34, a resin with high adhesion to the second substrate 34 or a resin containing a spacer for adjusting the gap between the element substrate 10 and the second substrate 34 may be selected as the resin layer 19, and in the region not overlapping with the second substrate 34, a potting resin to protect the surrounding circuit region from static electricity and chemical substances, or a protective resin to cover the circuit board 20 to protect the joint between the element substrate 10 and the circuit board 20 may be formed as the resin layer 19 so as to overlap the slit 18. When an anisotropic conductive resin is used as the bonding member 21 for the circuit board 20, forming the resin layer 19 before bonding the circuit board 20 may cause the step of the resin layer 19 to affect the bonding accuracy of the circuit board 20. On the other hand, after bonding the circuit board 20, it is difficult to form the resin layer 19 because the circuit board 20 is superimposed on the slit 18. Therefore, the anisotropic conductive resin layer may be formed as the bonding member 21 so as to overlap the slit 18, thereby also serving as the resin layer 19.

[0040] In this embodiment, the second substrate 34 is bonded so as to cover the slit 18, which further suppresses the peeling of the sealing layer 16 from the slit 18 due to the application of external force or impact to the slit 18. As described above, in this embodiment as well, it is possible to suppress the peeling of the sealing layer 16 from the slit 18 during the module assembly process.

[0041] [Fourth Embodiment] Another embodiment of the module will be described with reference to Figure 6. Since the configuration, functions, materials, effects, etc., are the same as those of the first to third embodiments, redundant explanations will be omitted. Figure 6 is a schematic diagram illustrating a fourth embodiment of the module, which includes an element substrate. Figure 6(a) is a schematic plan view of the module as seen from the main surface, and Figure 6(b) is a schematic cross-sectional view of the A-A' region in Figure 6(a).

[0042] In the fourth embodiment, a portion of the slit 18 is positioned outside the guard ring 33 in a plan view. Even when the slit 18 is positioned outside the guard ring 33, as in this embodiment, peeling of the sealing layer 16 from the slit 18 due to the application of external force or impact to the slit 18 can be further suppressed.

[0043] As described above, according to this disclosure, by providing slits in the sealing layer, the extension of peeling of the sealing layer during dicing of the element substrate is suppressed, and by placing a resin layer in the slits of the sealing layer, peeling of the sealing layer from the slits during the assembly process is suppressed, thereby improving yield.

[0044] [Organic light-emitting element and apparatus / device using the element] Next, embodiments of devices and equipment using the element substrate described above will be explained. The element substrate of this disclosure is suitably used in an organic light-emitting device equipped with an organic light-emitting element. An organic light-emitting device comprises a first electrode, a second electrode, and an organic compound layer disposed between these electrodes. One of the first electrode and the second electrode is an anode and the other is a cathode. In an organic light-emitting device, the organic compound layer may be a single layer or a laminate consisting of multiple layers, provided that it has a light-emitting layer. If the organic compound layer is a laminate consisting of multiple layers, it may have, in addition to the light-emitting layer, a hole injection layer, a hole transport layer, an electron blocking layer, a hole-exciton blocking layer, an electron transport layer, an electron injection layer, etc. The light-emitting layer may also be a single layer or a laminate consisting of multiple layers. If the light-emitting layer is a multi-layer structure, a charge generation layer may be present between the light-emitting layers. The charge generation layer may be composed of a compound whose LUMO (lowest unoccupied orbital molecular energy) is lower than that of the hole transport layer, and the LUMO of the charge generation layer may be lower than that of the HOMO (highest occupied orbital molecular energy) of the hole transport layer. Here, the molecular orbital energy of the organic compound layer may be the energy level of the organic compound with the largest mass ratio of the organic compound layer.

[0045] Here, HOMO and LUMO are described as "higher" the closer they are to the vacuum level. When the LUMO of the charge generation layer is lower than the HOMO of the hole transport layer, it means that the LUMO of the charge generation layer is closer to the vacuum level than the HOMO of the hole transport layer.

[0046] In this specification, HOMO and LUMO can be calculated using molecular orbital calculations. Molecular orbital calculations are performed using density functional theory (DFT), etc., with B3LYP as the functional and 6-31G* as the basis set.Gaussian09(Gaussian09,RevisionC.01,MJFrisch,GWTrucks,HBSchlegel,GEScuseria,MARobb, JRCheeseman,G.Scalmani,V.Barone,B.Mennucci,GAPetersson,H.Nakatsuji,M.Caricato,X.Li,HPHratchian,AF Izmailov,J.Bloino,G.Zheng,JLSonnenberg,M.Hada,M.Ehara,K.Toyota,R.Fukuda,J.Hasegawa,M.Ishida,T.Nak ajima,Y.Honda,O.Kitao,H.Nakai,T.Vreven,JAMontgomery,Jr.,JEPeralta,F.Ogliaro,M.Bearpark,JJHeyd,E.B rothers,KNKudin,VNStaroverov,T.Keith,R.Kobayashi,J.Normand,K.Raghavachari,A.Rendell,JCBurant,SSIy engar,J.Tomasi,M.Cossi,N.Rega,JMMillam,M.Klene,JEKnox,JBCross,V.Bakken,J.Adamo,J.Jaramillo,R.Gomp erts,REStratmann,O.Yazyev,AJAustin,R.Cammi,J.Pomelli,JWOchterski,RLMartin,K.Morokuma,VGZakrzewski,GAVoth,P.Salvador,JJDannenberg,S.Dapprich,ADDaniels,O.Farkas,JBForesman,JVOrtizski,J.Condizski DJFox,Gaussian,Inc.,Wallingford CT,2010.)

[0047] In this specification, HOMO and LUMO can be calculated using the ionization potential and band gap. The HOMO can be estimated by measuring the ionization potential. The ionization potential can be measured by dissolving the compound to be measured in a solvent such as toluene and measuring it with a measuring device such as AC-3. The band gap can be measured by dissolving the compound to be measured in a solvent such as toluene and irradiating it with excitation light. The band gap can be measured by measuring the absorption edge of the excitation light. Alternatively, the compound to be measured can be deposited on a substrate such as glass and the deposited film can be irradiated with excitation light to measure the band gap. The measurement can be performed by measuring the absorption edge of the absorption spectrum at which the deposited film absorbs the excitation light.

[0048] The LUMO can be calculated using the band gap and ionization potential. By subtracting the ionization potential from the band gap, the LUMO can be estimated. LUMO can also be estimated from the reduction potential. For example, the one-electron reduction potential can be estimated using cyclic volmetry (CV) measurement. CV measurement is performed, for example, in a 0.1 M tetrabutylammonium perchlorate DMF solution with an Ag / Ag reference electrode. + The measurement can be performed using Pt as the counter electrode and glassy carbon as the working electrode. The LUMO can be estimated by adding the difference of -4.8 eV between the reduction potential of the obtained compound and the reduction potential of ferrocene.

[0049] In organic light-emitting devices, the light-emitting layer is, for example, a layer made of an organometallic complex or a layer made of an organometallic complex and other compounds. When it is made of an organometallic complex and other compounds, the organometallic complex may be used as a host or a guest in the light-emitting layer. It may also be used as an assisting material that can be included in the light-emitting layer. Here, the host is the compound with the largest mass ratio among the compounds constituting the light-emitting layer. The guest is a compound with a smaller mass ratio than the host among the compounds constituting the light-emitting layer, and is responsible for the main light emission. The assisting material is a compound with a smaller mass ratio than the host among the compounds constituting the light-emitting layer, and assists the light emission of the guest. The assisting material is also called the second host. The host material can also be called the first compound, and the assisting material can be called the second compound.

[0050] When organometallic complexes are used as guests in the luminescent layer, the concentration of the guest is preferably 0.01% to 20% by mass, and more preferably 0.1% to 10% by mass, relative to the entire luminescent layer. The guest is also called a dopant.

[0051] When organometallic complexes are used as a host or guest for the light-emitting layer, particularly as a guest, a device can be obtained that exhibits high efficiency, high brightness, and extremely high durability. This light-emitting layer may be single-layer or multi-layer, and it is also possible to mix the original light-emitting colors by including light-emitting materials with other light-emitting colors. Multi-layer means a state in which one light-emitting layer is stacked with another light-emitting layer. In this case, the light-emitting color of the organic light-emitting element is not limited to red, blue, or green. More specifically, it may be white or an intermediate color. In the case of white, in multiple light-emitting layers, each light-emitting layer emits red, blue, or green light. Furthermore, the film deposition method can be either vapor deposition or coating.

[0052] Organometallic complexes can be used as constituent materials for organic compound layers other than the light-emitting layer. Specifically, they may be used as constituent materials for electron transport layers, electron injection layers, hole transport layers, hole injection layers, hole blocking layers, etc. In this case, the light emission color of the organic light-emitting element is not limited to red, blue, or green. More specifically, it may be white light emission or an intermediate color.

[0053] In addition to organometallic complexes, conventionally known low-molecular-weight and high-molecular-weight hole-implanting or hole-transporting compounds, host compounds, luminescent compounds, electron-injecting or electron-transporting compounds, etc., can be used together as needed.

[0054] As hole-injection transport materials, materials with high hole mobility are preferred to facilitate hole injection from the anode and to transport the injected holes to the light-emitting layer. Furthermore, materials with a high glass transition temperature are preferred to reduce film quality degradation such as crystallization in organic light-emitting devices. Examples of low-molecular-weight and high-molecular-weight materials with hole-injection transport properties include triarylamine derivatives, arylcarbazole derivatives, phenylenediamine derivatives, stilbene derivatives, phthalocyanine derivatives, porphyrin derivatives, poly(vinylcarbazole), poly(thiophene), and other conductive polymers. Moreover, the above-mentioned hole-injection transport materials are also suitably used in electron-blocking layers.

[0055] Luminescent materials primarily involved in light emission include fused ring compounds (e.g., fluorene derivatives, naphthalene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, anthracene derivatives, rubrene, etc.), quinacridone derivatives, coumarin derivatives, stilbene derivatives, organoaluminum complexes such as tris(8-quinolinolate)aluminum, iridium complexes, platinum complexes, rhenium complexes, copper complexes, europium complexes, ruthenium complexes, and polymer derivatives such as poly(phenylenevinylene) derivatives, poly(fluorene) derivatives, and poly(phenylene) derivatives.

[0056] When the luminescent material is a hydrocarbon compound, it is preferable because it can reduce the decrease in luminescence efficiency due to excyplex formation and the decrease in color purity due to changes in the emission spectrum of the luminescent material caused by excyplex formation.

[0057] When the light-emitting material is a condensed polycyclic material containing a five-membered ring, it is preferable because its ionization potential is high, making it less susceptible to oxidation and resulting in a highly durable device with a long lifespan.

[0058] Examples of light-emitting layer hosts or light-emitting assist materials included in the light-emitting layer include aromatic hydrocarbon compounds or their derivatives, as well as carbazole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, organoaluminum complexes such as tris(8-quinolinolate)aluminum, and organoberylium complexes.

[0059] As electron-transporting materials, any material capable of transporting electrons injected from the cathode to the light-emitting layer can be arbitrarily selected, taking into consideration the balance with the hole mobility of the hole-transporting material. Examples of materials with electron-transporting properties include oxadiazole derivatives, pyrazine derivatives, triazole derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, phenanthroline derivatives, organoaluminum complexes, and fused ring compounds (e.g., fluorene derivatives, naphthalene derivatives, chrysene derivatives, anthracene derivatives, etc.). Furthermore, the above electron-transporting materials are also suitably used in the hole-blocking layer.

[0060] Electron-injectable materials can be arbitrarily selected from those that allow for easy electron injection from the cathode, taking into consideration factors such as the balance with hole injection properties. Organic compounds include n-type dopants and reducing dopants. Examples include alkali metal compounds such as lithium fluoride, lithium complexes such as lithium quinolinol, benzimidazolidene derivatives, imidazolidene derivatives, fluvalene derivatives, and acridine derivatives. It can also be used in combination with the electron transport materials mentioned above.

[0061] An organic light-emitting element is formed on a substrate by creating an insulating layer, a first electrode, an organic compound layer, and a second electrode. A protective layer, a color filter, a microlens, etc., may be provided on the second electrode. If a color filter is provided, a planarization layer may be provided between it and the protective layer. The planarization layer can be made of acrylic resin or the like. The same applies when a planarization layer is provided between the color filter and the microlens. Each component is described below.

[0062] (substrate) Examples of substrates include quartz, glass, silicon wafers, resins, and metals. The substrate may also be equipped with switching elements such as transistors and wiring, and an insulating layer may be provided on top of them. The insulating layer can be made of any material that allows for the formation of contact holes between it and the first electrode, while ensuring insulation from wiring that is not connected. For example, resins such as polyimide, silicon oxide, and silicon nitride can be used.

[0063] (electrode) A pair of electrodes can be used. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with the higher potential is the anode, and the other is the cathode. Alternatively, the electrode that supplies holes to the light-emitting layer can be the anode, and the electrode that supplies electrons can be the cathode.

[0064] For the anode, materials with the largest possible work function are preferable. For example, elemental metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, or mixtures containing these, or alloys combining them, as well as metal oxides such as tin oxide, zinc oxide, indium oxide, tin-indium oxide (ITO), and zinc-indium oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.

[0065] These electrode materials may be used individually or in combination of two or more types. Furthermore, the anode may consist of a single layer or multiple layers.

[0066] When used as a reflective electrode, materials such as chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys or laminates thereof can be used. It is also possible to use the above materials as a reflective film without serving as an electrode. Furthermore, when used as a transparent electrode, oxide transparent conductive layers such as indium tin oxide (ITO) or indium zinc oxide can be used, but are not limited to these. Photolithography can be used to form the electrodes.

[0067] On the other hand, materials with a small work function are preferred for the cathode. Examples include alkali metals such as lithium, alkaline earth metals such as calcium, and elemental metals or mixtures containing these, such as aluminum, titanium, manganese, silver, lead, and chromium. Alternatively, alloys combining these elemental metals can also be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials may be used individually or in combination of two or more. The cathode may also be a single-layer or multi-layer structure. Among these, silver is preferred, and a silver alloy is even more preferred to reduce silver aggregation. The alloy ratio is not important as long as silver aggregation is reduced. For example, the ratio of silver to other metals may be 1:1, 3:1, etc.

[0068] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but using DC and AC sputtering methods is more preferable because it provides good film coverage and makes it easier to reduce resistance.

[0069] (Pixel separation layer) The pixel separation layer is formed from a silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO) film, which is formed using chemical vapor deposition (CVD). To increase the in-plane resistance of the organic compound layer, it is preferable that the thickness of the organic compound layer, particularly the hole transport layer, be thinly deposited on the sidewalls of the pixel separation layer. Specifically, by increasing the taper angle of the sidewalls of the pixel separation layer and the thickness of the pixel separation layer, the vignetting during deposition can be increased, thereby allowing for the deposition of a thinner film on the sidewalls.

[0070] On the other hand, it is preferable to adjust the taper angle of the sidewalls of the pixel isolation layer and the thickness of the pixel isolation layer to such an extent that no voids are formed in the protective layer formed on top of it. Since no voids are formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, reliability degradation such as the occurrence of dark spots and poor conductivity of the second electrode can be reduced.

[0071] (organic compound layer) The organic compound layer may be formed as a single layer or as multiple layers. When there are multiple layers, they are called a hole injection layer, a hole transport layer, an electron blocking layer, an emissive layer, a hole blocking layer, an electron transport layer, or an electron injection layer, depending on their function. The organic compound layer is mainly composed of organic compounds, but may also contain inorganic atoms or inorganic compounds. For example, it may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be placed between the first electrode and the second electrode, or it may be placed in contact with both the first and second electrodes.

[0072] If there are multiple light-emitting layers, a charge generation section may be provided between the first and second light-emitting layers. The charge generation section may contain an organic compound with a minimum unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same applies when the charge generation section is provided between the second and third light-emitting layers.

[0073] The organic compound layers constituting the organic light-emitting element (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) are formed by the method described below.

[0074] The organic compound layer can be formed using dry processes such as vacuum deposition, ionization deposition, sputtering, or plasma deposition. Alternatively, a wet process can be used, in which the compound is dissolved in a suitable solvent and the layer is formed by a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0075] When layers are formed using methods such as vacuum deposition or solution coating, crystallization is less likely to occur, resulting in excellent stability over time. Furthermore, when forming films using coating methods, it is possible to combine the film with an appropriate binder resin.

[0076] Examples of the binder resins mentioned above include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea resin.

[0077] Furthermore, these binder resins may be used individually as homopolymers or copolymers, or as a mixture of two or more types. Additionally, known additives such as plasticizers, antioxidants, and UV absorbers may be used in combination as needed.

[0078] (protective layer) A protective layer may be provided on the second electrode. For example, by bonding glass with a desiccant to the second electrode, the intrusion of water and other substances into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water and other substances into the organic compound layer. For example, after forming the cathode, the material may be transported to another chamber without breaking the vacuum, and a silicon nitride film with a thickness of 2 μm may be formed by the CVD method to serve as a protective layer. A protective layer may also be provided using atomic deposition (ALD) after film formation by the CVD method. The material of the film formed by the ALD method is not limited, but may be silicon nitride, silicon oxide, aluminum oxide, etc. A silicon nitride film may be further formed on the film formed by the ALD method by the CVD method. The film formed by the ALD method may have a thinner film thickness than the film formed by the CVD method. Specifically, it may be 50% or less, or even 10% or less.

[0079] (Color filter) A color filter may be provided on top of the protective layer. For example, a color filter that takes into account the size of the organic light-emitting element may be provided on a separate substrate and bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer as described above using photolithography technology. The color filter may be made of polymer.

[0080] (flattening layer) A planarizing layer may be provided between the color filter and the protective layer. The planarizing layer is provided to reduce the unevenness of the layer below. It may also be called a material resin layer without limiting its purpose. The planarizing layer may be composed of an organic compound, and may be low molecular weight or high molecular weight, but high molecular weight is preferred.

[0081] The planarization layer may be provided above or below the color filter, and its constituent materials may be the same or different. Specifically, examples include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, urea resin, etc.

[0082] (Microlens) An organic light-emitting element may have optical components such as microlenses on its light-emitting side. Microlenses may be made of acrylic resin, epoxy resin, or the like. Microlenses may be used to increase the amount of light extracted from the organic light-emitting element or to control the direction of the extracted light. Microlenses may have a hemispherical shape. If they have a hemispherical shape, among the tangents tangent to the hemisphere, there is a tangent parallel to the insulating layer, and the point of contact between that tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be similarly determined in any cross-sectional view. That is, among the tangents tangent to the semicircle of the microlens in the cross-sectional view, there is a tangent parallel to the insulating layer, and the point of contact between that tangent and the semicircle is the vertex of the microlens.

[0083] Furthermore, the midpoint of a microlens can also be defined. In the cross-section of a microlens, a line segment can be imagined from the point where one arc ends to the point where another arc ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross-section used to determine the vertices and midpoints may be a cross-section perpendicular to the insulating layer.

[0084] A microlens has a first surface with a convex portion and a second surface opposite to the first surface. It is preferable that the second surface is positioned closer to the functional layer than the first surface. To adopt such a configuration, it is necessary to form the microlens on the light-emitting device. If the functional layer is an organic layer, it is preferable to avoid processes that involve high temperatures during the manufacturing process. Furthermore, when adopting a configuration in which the second surface is positioned closer to the functional layer than the first surface, it is preferable that the glass transition temperatures of all organic compounds constituting the organic layer be 100°C or higher, and more preferably 130°C or higher.

[0085] (Opposite substrate) A counter substrate may be provided on the planarized layer. The counter substrate is called a counter substrate because it is provided in a position corresponding to the aforementioned substrate. The constituent material of the counter substrate may be the same as that of the aforementioned substrate. The counter substrate may be a second substrate if the aforementioned substrate is referred to as the first substrate.

[0086] (Pixel circuit) A light-emitting device having an organic light-emitting element may have a pixel circuit connected to the light-emitting element. The pixel circuit may be an active-matrix type that independently controls the light emission of a first light-emitting element and a second light-emitting element. The active-matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the light emission brightness of the light-emitting element, a transistor that controls the light emission timing, a capacitor that holds the gate voltage of the transistor that controls the light emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0087] The light-emitting device has a display area and a peripheral area arranged around the display area. The display area has a pixel circuit, and the peripheral area has a display control circuit. The mobility of the transistors constituting the pixel circuit may be smaller than the mobility of the transistors constituting the display control circuit. The slope of the current-voltage characteristics of the transistors constituting the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors constituting the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristic. The transistors that make up the pixel circuit are transistors connected to light-emitting elements, such as the first light-emitting element.

[0088] (Pixels) The organic light-emitting device has multiple pixels. Each pixel has subpixels that emit light of a different color from the others. The subpixels may each have, for example, RGB light-emitting colors. A pixel emits light in a region also called the pixel aperture. This region is the same as the first region. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc. The distance between subpixels may be 10 μm or less, specifically 8 μm, 7.4 μm, or 6.4 μm.

[0089] Pixels can take on known arrangements in a plan view. For example, they may be in a stripe arrangement, delta arrangement, pentile arrangement, or Bayer arrangement. The shape of subpixels in a plan view may be any known shape. For example, rectangles, rhombuses, hexagons, etc. Of course, even if it is not a precise shape, if it is close to a rectangle, it is included in the category of rectangles. The shape of subpixels and the pixel arrangement can be used in combination.

[0090] [Applications of organic light-emitting diodes] Organic light-emitting elements can be used as components in display devices and lighting equipment. Other applications include exposure light sources in electrophotographic image forming apparatuses, backlights in liquid crystal display devices, and light-emitting devices with color filters in a white light source.

[0091] The display device may also be an image information processing device that has an image input unit for receiving image information from an area CCD, linear CCD, memory card, etc., an information processing unit for processing the input information, and displays the input image on the display unit.

[0092] Furthermore, the display unit of the imaging device or inkjet printer may have a touch panel function. The driving method for this touch panel function may be infrared, capacitive, resistive, or electromagnetic induction, and is not particularly limited. The display device may also be used as the display unit of a multifunction printer.

[0093] Next, we will explain the display device while referring to the drawings. Figure 7 is a schematic cross-sectional view showing an example of a display device having an organic light-emitting element and a transistor connected to this organic light-emitting element. The transistor is an example of an active element. The transistor may also be a thin-film transistor (TFT).

[0094] Figure 7(a) shows an example of a pixel, which is a component of a display device. The pixel has sub-pixels 50. The sub-pixels are divided into 50R, 50G, and 50B based on their light emission. The light emission color may be distinguished by the wavelength emitted from the light-emitting layer, or the light emitted from the sub-pixel may be selectively transmitted or color-converted by a color filter or the like. Each sub-pixel has a first electrode 41 which is a reflective electrode, an insulating layer 53 covering the end of the first electrode 41, an organic compound layer 42 covering the first electrode 41 and the insulating layer 53, a transparent electrode as a second electrode 43, a protective layer 55, and a color filter 57 on an interlayer insulating layer 51.

[0095] The interlayer insulating layer 51 has transistors and capacitive elements placed in the layer below or inside it. The transistors and the first electrode 41 are electrically connected via contact holes or the like (not shown).

[0096] The insulating layer 53, also called a bank or pixel separation layer, covers the edge of the first electrode 41 and surrounds it. The portion not covered by the insulating layer 53 is in contact with the organic compound layer 42 and forms the light-emitting region. The organic light-emitting element 40 is composed of the first electrode 41, the organic compound layer 42, and the second electrode 43. The second electrode 43 may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0097] The protective layer 55 reduces the penetration of moisture into the organic compound layer 42. Although the protective layer 55 is shown as a single layer, it may consist of multiple layers. Each layer may contain an inorganic compound layer and an organic compound layer.

[0098] The color filters 57 are classified into 57R, 57G, and 57B according to their color. The color filters 57 may be formed on a planarization film (not shown). Alternatively, the color filters may have a resin protective layer (not shown). Alternatively, the color filters 57 may be formed on a protective layer 55. Or, they may be bonded to an opposing substrate such as a glass substrate after being placed on it.

[0099] The display device shown in Figure 7(b) includes an organic light-emitting element 76 and a TFT 68 as an example of a transistor. A substrate 61 made of glass, silicon, or the like is provided, with an insulating layer 62 on top of it. An active element 68 such as a TFT is placed on the insulating layer 62, and the gate electrode 63, gate insulating film 64, and semiconductor layer 65 of the active element 68 are arranged therein. The TFT 68 is also composed of a semiconductor layer 65, a drain electrode 66, and a source electrode 67. An insulating film 69 is provided on top of the TFT 68. The anode 71 and the source electrode 67 of the organic light-emitting element 76 are connected via a contact hole 70 provided in the insulating film 69.

[0100] Furthermore, the method of electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 76 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the configuration shown in Figure 7(b). In other words, it is sufficient for either the anode or cathode to be electrically connected to either the TFT source electrode or the drain electrode. TFT refers to a thin-film transistor.

[0101] In the display device shown in Figure 7(b), the organic compound layer 72 is depicted as a single layer, but the organic compound layer 72 may consist of multiple layers. A first protective layer 74 and a second protective layer 75 are provided on the cathode 73 to reduce the degradation of the organic light-emitting element 76.

[0102] In the display device shown in Figure 7(b), a transistor is used as the switching element, but other switching elements may be used instead.

[0103] Furthermore, the transistors used in the display device shown in Figure 7(b) are not limited to transistors using single-crystal silicon wafers, but may also be thin-film transistors having an active layer on an insulating surface of the substrate. Examples of active layers include non-single-crystal silicon such as single-crystal silicon, amorphous silicon, and microcrystalline silicon, and non-single-crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin-film transistors are also called TFT elements.

[0104] The transistors included in the display device shown in Figure 7(b) may be formed within a substrate such as a Si substrate. Here, "formed within a substrate" means that the transistors are manufactured by processing the substrate itself, such as a Si substrate. In other words, having transistors within a substrate can be seen as the substrate and transistors being formed as a single unit.

[0105] The organic light-emitting element according to this embodiment has its luminescence controlled by a TFT, which is an example of a switching element, and by providing multiple organic light-emitting elements on one surface, an image can be displayed using the luminescence of each element. The switching element according to this embodiment is not limited to a TFT, but may also be a transistor made of low-temperature polysilicon, or an active matrix driver formed on a substrate such as a Si substrate. "On the substrate" can also mean "within the substrate." Whether to provide a transistor within the substrate or to use a TFT is selected depending on the size of the display area; for example, if the size is about 0.5 inches, it is preferable to provide the organic light-emitting element on a Si substrate.

[0106] Figure 8 is a schematic diagram representing an example of a display device. The display device 1000 has a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between the upper cover 1001 and the lower cover 1009. Flexible printed circuits FPCs 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. Transistors are printed on the circuit board 1007. The battery 1008 does not need to be provided if the display device is not a portable device, or it may be provided in a different location even if it is a portable device.

[0107] The display device according to this embodiment may have a color filter having red, green, and blue. The color filter may have the red, green, and blue elements arranged in a delta array.

[0108] The display device according to this embodiment may be used in the display unit of a mobile terminal. In that case, it may have both a display function and an operation function. Examples of mobile terminals include smartphones and other mobile phones, tablets, and head-mounted displays.

[0109] The display device according to this embodiment may be used in the display unit of an imaging device having an optical unit with a plurality of lenses and an image sensor that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the image sensor. Furthermore, the display unit may be a display unit exposed to the outside of the imaging device or a display unit located inside the viewfinder. The imaging device may be a digital camera or a digital video camera.

[0110] Figure 9(a) is a schematic diagram showing an example of an imaging device according to this embodiment. The imaging device 1100 includes a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 has a display device according to the above embodiment. In this case, the display device may display not only the image to be captured, but also environmental information, imaging instructions, etc. Environmental information may include the intensity of ambient light, the direction of ambient light, the speed at which the subject is moving, the possibility of the subject being obscured by an obstacle, etc.

[0111] Since the optimal timing for imaging is very short, it is best to display the information as quickly as possible. Therefore, a display device using an organic light-emitting element with a fast response speed is preferred. A display device using an organic light-emitting element can be used more suitably than liquid crystal display devices, which require high display speed.

[0112] The imaging device 1100 has an optical section (not shown). The optical section has multiple lenses that form an image on the image sensor housed in the housing 1104. The focus can be adjusted by adjusting the relative positions of the multiple lenses. This operation can also be performed automatically. The imaging device may also be called a photoelectric converter. The photoelectric converter may not capture images sequentially, but may include imaging methods such as detecting the difference from the previous image or extracting from an image that is always being recorded.

[0113] Figure 9(b) is a schematic diagram representing an example of an electronic device. The electronic device 1200 has a display unit 1201, an operating unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operating unit 1202 may be a button or a touch panel type response unit. The operating unit may also be a biometric recognition unit that recognizes fingerprints to unlock the device, etc. An electronic device having a communication unit can also be called a communication device. The electronic device may further have a camera function by including a lens and an image sensor. Images captured by the camera function are displayed on the display unit. Examples of electronic devices include smartphones and laptop computers.

[0114] Figure 10 is a schematic diagram representing an example of a display device. Figure 10(a) is a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. An organic light-emitting element is used in the display unit 1302. It has a frame 1301 and a base 1303 that supports the display unit 1302. The base 1303 is not limited to the form shown in Figure 10(a). The bottom edge of the frame 1301 may also serve as the base. Furthermore, the frame 1301 and the display section 1302 may be curved. Their radius of curvature may be between 5000 mm and 6000 mm.

[0115] The display device 1310 in Figure 10(b) is configured to be foldable and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The first display unit 1311 and the second display unit 1312 each have a light-emitting device using an organic light-emitting element. The first display unit 1311 and the second display unit 1312 may be a single display device without seams. The first display unit 1311 and the second display unit 1312 can be separated at the bending point. The first display unit 1311 and the second display unit 1312 may each display different images, or they may display a single image together.

[0116] Figure 11 is a schematic diagram showing an example of a lighting device. The lighting device 1400 includes a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion section 1405. The light source has an organic light-emitting element. The optical filter may be a filter that improves the color rendering of the light source. The light diffusion section effectively diffuses the light from the light source, such as for lighting up, and can deliver light over a wide area. The optical filter and light diffusion section may be provided on the light-emitting side of the lighting. A cover may be provided on the outermost part as needed.

[0117] A lighting device is, for example, a device for illuminating a room. The lighting device may emit white light, cool white light, or any other color from blue to red. It may also have a dimming circuit to adjust the brightness. The lighting device comprises an organic light-emitting element and a power supply circuit connected to it. The power supply circuit is a circuit that converts AC voltage to DC voltage. Furthermore, white light has a color temperature of 4200K, and cool white light has a color temperature of 5000K. The lighting device may also have a color filter.

[0118] Furthermore, the lighting device according to this embodiment may have a heat dissipation section. The heat dissipation section releases heat from inside the device to the outside, and examples include metals with high specific heat, liquid silicone, etc.

[0119] Figure 12 is a schematic diagram of an automobile, which is an example of a mobile object. The automobile has a taillight, which is an example of a lighting device. The automobile 1500 may have a taillight 1501, and the taillight may be configured to illuminate when the brakes are applied or otherwise.

[0120] The taillight 1501 has an organic light-emitting element. The taillight 1501 may also have a protective member to protect the organic light-emitting element. The protective member has a reasonably high strength and can be made of any transparent material, but it is preferably made of polycarbonate or the like. A frangic acid derivative, an acrylonitrile derivative, or the like may be mixed with the polycarbonate.

[0121] The automobile 1500 may have a body 1503 and windows 1502 attached thereto. The windows 1502 may be transparent displays, unless they are windows for checking the front and rear of the automobile. The transparent display is the display device of the above embodiment, in which case the constituent materials such as electrodes of the organic light-emitting element are made of transparent members.

[0122] Furthermore, as shown in Figure 12(b), the automobile 1500 includes a steering wheel 1504 for controlling the direction of movement of the moving body, a display unit 1505 mounted on the vehicle body 1503 for displaying a map, the position of the moving body, the direction of turns, etc. The display unit 1505 has the display device of the above embodiment.

[0123] The mobile body according to this embodiment includes a drive force generating unit that generates a driving force mainly used for the movement of the mobile body, and one or both of the rotating bodies mainly used for the movement of the mobile body. The drive force generating unit may be an engine, a motor, etc. The rotating body may be a tire, a wheel, a ship's propeller, an aircraft's propeller, etc. Specifically, it may be a bicycle, an automobile, a train, a ship, an aircraft, a drone, etc. The mobile body may have a body and a lighting fixture or a display unit provided on the body. The lighting fixture may be equipped with illumination to indicate the position of the body, and the display unit may have an organic light-emitting element.

[0124] Referencing Figure 13, examples of applications of the display devices of each embodiment described above will be explained. The display device can be applied to systems that can be worn as wearable devices such as smart glasses, HMDs, and smart contact lenses. The imaging display device used in such applications comprises an imaging device capable of photoelectric conversion of visible light and a display device capable of emitting visible light.

[0125] Figure 13(a) is a schematic diagram of eyeglasses 1600 (smart glasses) according to one application example. An imaging device 1602, such as a CMOS sensor or SPAD, is provided on the front surface side of the lens 1601 of the eyeglasses 1600. In addition, the display devices of each embodiment described above are provided on the back surface side of the lens 1601.

[0126] The eyeglasses 1600 further include a control device 1603. The control device 1603 functions as a power supply that provides power to the imaging device 1602 and the display device according to the above embodiment. The control device 1603 also controls the operation of the imaging device 1602 and the display device. The lens 1601 has an optical system formed therein for focusing light onto the imaging device 1602.

[0127] Figure 13(b) is a schematic diagram of eyeglasses 1610 (smart glasses) relating to another application example. The eyeglasses 1610 have a control device 1612. The control device 1612 is equipped with an imaging device corresponding to the imaging device 1602 and a display device. An optical system is formed in the lens 1611 for projecting the light emitted by the display device in the control device 1612, and an image is projected onto the lens 1611. The control device 1612 functions as a power supply that supplies power to the imaging device and the display device, and also controls the operation of the imaging device and the display device. The control device may have a gaze detection unit that detects the wearer's gaze. Gaze detection may use infrared light. The infrared light emitter emits infrared light towards the eyeball of the user who is fixating on the displayed image. An image of the eyeball is obtained by detecting the reflected light from the eyeball of the emitted infrared light with an imaging unit having a photodetector. By having a reduction means that reduces the light from the infrared light emitter to the display unit in planar view, the deterioration of image quality is reduced.

[0128] The user's gaze towards the displayed image is detected from an image of the eyeball obtained by imaging with infrared light. Any known method can be applied to gaze detection using an image of the eyeball. For example, a gaze detection method based on the Purkinje image obtained by the reflection of the irradiated light from the cornea can be used.

[0129] More specifically, gaze detection processing is performed based on the pupil-corneal reflection method. Using the pupil-corneal reflection method, a gaze vector representing the orientation (rotation angle) of the eyeball is calculated based on the pupil image and Purkinje image contained in the captured image of the eyeball, thereby detecting the user's gaze.

[0130] The display device according to this embodiment includes an imaging device having a light-receiving element, and may control the display image of the display device based on the user's gaze information from the imaging device.

[0131] Specifically, the display device determines a first display area that the user is fixated on, and a second display area other than the first display area, based on gaze information. The first and second display areas may be determined by the display device's control unit, or they may be determined by an external control unit and received. Within the display area of ​​the display device, the display resolution of the first display area may be controlled to be higher than the display resolution of the second display area. In other words, the resolution of the second display area may be lower than that of the first field of view area.

[0132] Furthermore, the display area has a first display area and a second display area different from the first display area, and based on gaze information, the area with higher priority is determined from the first display area and the second display area. The first and second view areas may be determined by the control device of the display device, or they may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of the areas other than the high-priority area. In other words, the resolution of areas with relatively lower priority may be lower.

[0133] Furthermore, AI may be used to determine the first display area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to the target object at the end of the gaze, using the image of the eyeball and the direction the eyeball was actually looking in the image as training data. The AI ​​program may be installed in the display device, the imaging device, or an external device. If installed in an external device, it will be transmitted to the display device via communication.

[0134] When display control is based on visual detection, this method is preferably applicable to smart glasses that further include an imaging device for capturing images of the surrounding environment. The smart glasses can display the captured external information in real time.

[0135] Figure 14 shows an image forming apparatus. Figure 14(a) is a schematic diagram of the image forming apparatus 1700 according to this embodiment. The image forming apparatus includes a photoreceptor, an exposure light source, a developing unit, a charging unit, a transfer unit, a transport roller, and a fuser.

[0136] Light 1709 is irradiated from the exposure light source 1708, and an electrostatic latent image is formed on the surface of the photoreceptor 1707. The exposure light source 1708 has an organic light-emitting element. The developing unit 1711 has toner or the like. The charging unit 1710 charges the photoreceptor 1707. The transfer unit 1712 transfers the developed image to the recording medium 1714. The transport unit 1713 transports the recording medium 1714. The recording medium 1714 is, for example, paper. The fixing unit 1715 fixes the image formed on the recording medium 1714.

[0137] Figures 14(b) and 14(c) are schematic diagrams showing how multiple light-emitting units 1726 are arranged on a long substrate in an exposure light source 1708. 1727 is parallel to the axis of the photoreceptor 1707 and represents the column direction in which the light-emitting units 1726, each having an organic light-emitting element, are arranged. This column direction is the same as the direction of the axis of rotation of the photoreceptor 1727. This direction can also be called the long axis direction of the photoreceptor 1727.

[0138] Figure 14(b) shows a configuration in which the light-emitting units 1726 are arranged along the long axis of the photoreceptor. Figure 14(c) shows a different configuration from (b), in which the light-emitting units 1726 are arranged alternately in the column direction in the first and second columns. The first and second columns are positioned at different locations in the row direction.

[0139] The first row has multiple light-emitting units 1726 arranged at intervals. The second row has light-emitting units 1726 at positions corresponding to the intervals between the light-emitting units 1726 in the first row. That is, multiple light-emitting units 1726 are also arranged at intervals in the row direction.

[0140] The arrangement in Figure 14(c) can also be described as a grid pattern, a houndstooth pattern, or a checkerboard pattern.

[0141] As described above, by using the device employing the organic light-emitting element according to this embodiment, stable display with good image quality is possible even during long-term display.

[0142] [Included components] This embodiment includes the following configuration. (Composition 1) An element substrate having an effective element region having a plurality of functional elements on one main surface side, and a peripheral region located around the effective element region, The element substrate comprises a wiring layer electrically connected to the functional element, an external connection terminal, and a sealing layer covering the functional element and the wiring layer. The sealing layer has a slit at least between the external connection terminal and the end of the element substrate. The element substrate is characterized in that resin is disposed in the slit. (Configuration 2) The element substrate according to configuration 1, characterized in that, in a plan view from the normal direction of the main surface, the slit is arranged along the edge of the element substrate in the peripheral region. (Composition 3) The element substrate according to configuration 1 or 2, characterized in that a guard ring consisting of multiple wiring layers and at least one of via plugs and contact plugs connecting the wiring layers is arranged in the peripheral region, and the slits overlap with the guard ring in at least a portion of the view from the normal direction to the main surface. (Composition 4) The element substrate according to configuration 1 or 2, characterized in that a guard ring consisting of multiple wiring layers and at least one of via plugs and contact plugs connecting the wiring layers is arranged in the peripheral region, and the slit is arranged outside the guard ring in at least a portion of the view from the normal direction to the main surface.

[0143] (Composition 5) The element substrate according to any one of configurations 1 to 4, characterized in that, in a plan view from the normal direction of the main surface, at least two slits are arranged at intervals from each other. (Composition 6) An element substrate according to any one of configurations 1 to 5, characterized in that a second substrate is arranged to cover at least the effective element region, and the second substrate is bonded to the element substrate with the resin arranged in the slit. (Composition 7) The element substrate according to any one of configurations 1 to 6, characterized in that, in a plan view from the normal direction of the main surface, the width of the slit is wider than the width of the straight portion other than the corner of the element substrate at least a portion of the corner. (Composition 8) The element substrate according to any one of configurations 1 to 7, characterized in that the functional element is an organic light-emitting element.

[0144] (Composition 9) The element substrate according to any one of configurations 1 to 8, characterized in that the bottom of the slit is located inside the wiring layer. (Composition 10) The aforementioned wiring layer is placed inside the insulating layer, A conductive layer is disposed inside the insulating layer. The bottom of the slit is in contact with the conductive layer, as described in any of configurations 1 to 8 of the element substrate. (Composition 11) The conductive layer is located in the same layer as the wiring layer in the element substrate according to configuration 10. (Composition 12) The element substrate according to any one of configurations 1 to 11, wherein the insulating layer has a Low-k film and the slit penetrates the Low-k film.

[0145] (Composition 13) A module characterized by comprising an element substrate according to any one of configurations 1 to 12, and a circuit board joined to the external connection terminal of the element substrate via a bonding member. (Composition 14) The module according to configuration 13, characterized in that the joining member includes the resin disposed in the slit. (Composition 15) The module according to configuration 13, characterized in that the bonding member is an anisotropic conductive resin.

[0146] (Composition 16) A display device comprising the element substrate described in configuration 8, A display device having a plurality of pixels, wherein at least one of the plurality of pixels has the organic light-emitting element and a transistor connected to the organic light-emitting element. (Composition 17) A photoelectric conversion device comprising the element substrate described in configuration 8, It comprises an optical unit having multiple lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays the image captured by the image sensor. The photoelectric conversion device is characterized in that the display unit has the organic light-emitting element. (Composition 18) An electronic device comprising the element substrate described in configuration 8, An electronic device characterized by comprising: a display unit having the organic light-emitting element; a housing on which the display unit is provided; and a communication unit provided in the housing for communicating with the outside. (Composition 19) An electronic device comprising the element substrate described in configuration 8, A lighting device characterized by comprising a light source having the aforementioned organic light-emitting element, and a light-diffusing portion or optical film that transmits the light emitted by the light source. (Composition 20) A mobile body comprising the element substrate described in configuration 8, A mobile body characterized by comprising a light fixture having an organic light-emitting element, and a body on which the light fixture is installed. [Explanation of Symbols]

[0147] 1: Element region, 2: Peripheral region, 10: Element substrate, 14: Wiring layer, 15: Functional element, 16: Encapsulation layer, 17: External connection terminal, 18: Slit, 19: Resin layer, 20: Circuit board, 21: Bonding member, 31: Organic light-emitting element, 33: Guard ring, 34: Second substrate, 40, 76: Organic light-emitting element

Claims

1. An element substrate having an effective element region having a plurality of functional elements on one main surface side, and a peripheral region located around the effective element region, The element substrate comprises a wiring layer electrically connected to the functional element, an external connection terminal, and a sealing layer covering the functional element and the wiring layer. The sealing layer has a slit at least between the external connection terminal and the end of the element substrate. The element substrate is characterized in that resin is disposed in the slit.

2. The element substrate according to claim 1, characterized in that, in a plan view from the normal direction of the main surface, the slit is arranged along the edge of the element substrate in the peripheral region.

3. The element substrate according to claim 1, characterized in that a guard ring consisting of a plurality of wiring layers and at least one of via plugs and contact plugs connecting the wiring layers is arranged in the peripheral region, and the slits overlap with the guard ring in a plan view from the normal direction of the main surface.

4. The element substrate according to claim 1, characterized in that a guard ring consisting of a plurality of wiring layers and at least one of via plugs and contact plugs connecting the wiring layers is arranged in the peripheral region, and the slit is arranged outside the guard ring in at least a portion of the view from the normal direction to the main surface.

5. The element substrate according to claim 1, characterized in that at least two slits are arranged at intervals when viewed in a plan view from the normal direction of the main surface.

6. The element substrate according to claim 1, characterized in that a second substrate is arranged to cover at least the effective element region, and the second substrate is bonded to the element substrate with the resin arranged in the slit.

7. The element substrate according to claim 1, characterized in that, in a plan view from the normal direction of the main surface, the width of the slit is wider than the width of the straight portion other than the corner of the element substrate at least a portion of the corner.

8. The element substrate according to claim 1, characterized in that the functional element is an organic light-emitting element.

9. The element substrate according to claim 1, characterized in that the bottom of the slit is located inside the wiring layer.

10. The aforementioned wiring layer is placed inside the insulating layer, A conductive layer is disposed inside the insulating layer. The element substrate according to claim 1, wherein the bottom of the slit is in contact with the conductive layer.

11. The element substrate according to claim 10, wherein the conductive layer is in the same layer as the wiring layer.

12. The element substrate according to claim 1, wherein the insulating layer has a Low-k film, and the slit penetrates the Low-k film.

13. A module characterized by comprising an element substrate according to any one of claims 1 to 12, and a circuit board joined to the external connection terminal of the element substrate via a bonding member.

14. The module according to claim 13, characterized in that the joining member includes the resin disposed in the slit.

15. The module according to claim 14, characterized in that the bonding member is an anisotropic conductive resin.

16. A display device comprising the element substrate described in claim 8, A display device having a plurality of pixels, wherein at least one of the plurality of pixels has the organic light-emitting element and a transistor connected to the organic light-emitting element.

17. A photoelectric conversion device comprising the element substrate described in claim 8, It comprises an optical unit having multiple lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays the image captured by the image sensor. The photoelectric conversion device is characterized in that the display unit has the organic light-emitting element.

18. An electronic device comprising the element substrate described in claim 8, An electronic device characterized by comprising: a display unit having the organic light-emitting element; a housing on which the display unit is provided; and a communication unit provided in the housing for communicating with the outside.

19. An electronic device comprising the element substrate described in claim 8, A lighting device characterized by comprising a light source having the aforementioned organic light-emitting element, and a light-diffusing portion or optical film that transmits the light emitted by the light source.

20. A mobile body comprising an element substrate as described in claim 8, A mobile body characterized by comprising a light fixture having an organic light-emitting element, and a body on which the light fixture is installed.

Images