Manufacturing method for array sensor elements

Abstract

This method suppresses the deterioration of the film quality of the silicon insulating film when forming a silicon insulating film on a polyimide film. [Solution] A method for manufacturing an array sensor element includes (a) a step of forming a polyimide film on a glass substrate, (b) a step of forming a silicon insulating film on the polyimide film, and (c) a step of forming an array of sensor elements on the silicon insulating film, the first electrode, a functional layer, and a second electrode, wherein in step (b), the silicon insulating film is formed while the temperature of the glass substrate is set to 330°C or lower.

Description

Technical Field

[0004] , , , , , ,

[0001] The present disclosure relates to a method for manufacturing an array sensor element.

Background Art

[0002] As a detection device in which elements having a structure in which a plurality of thin films are laminated are arranged in an array, for example, an imaging device of Patent Document 1, an ultrasonic device of Patent Document 2, and the like are known. In forming the elements used in these detection devices, the manufacturing technology of flat panel displays is utilized. Further, attempts have been made to form the above detection device on, for example, a flexible substrate. For example, Patent Document 3 discloses a method of forming a separation layer on a substrate, forming a transfer layer containing an element on this separation layer, bonding the transfer layer to a transfer body via an adhesive layer, and then irradiating the separation layer with light to separate the substrate from the transfer layer, thereby forming the transfer layer on a transfer body such as a flexible substrate. Further, Patent Document 3 describes that, for example, polyimide can be used as this separation layer, and that a SiO2 film can be formed on the separation layer.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] As in the method disclosed in Patent Document 3 above, when a polyimide film is formed on a substrate as a separation layer and a silicon insulating film, such as an SiO2 film, is formed on the polyimide film, the quality of the silicon insulating film may deteriorate due to gases generated from the polyimide. [Means for solving the problem]

[0005] According to one embodiment of the present disclosure, a method for manufacturing an array sensor element is provided. This manufacturing method includes (a) a step of forming a polyimide film on a glass substrate, (b) a step of forming a silicon insulating film on the polyimide film, and (c) a step of forming an array of sensor elements on the silicon insulating film, the first electrode, a functional layer, and a second electrode, wherein in step (b), the silicon insulating film is formed while the temperature of the glass substrate is set to 330°C or lower. [Brief explanation of the drawing]

[0006] [Figure 1] This is a top view showing the schematic configuration of the array sensor element. [Figure 2] This is a cross-sectional view showing the cross-sectional structure of an example of a sensor element. [Figure 3] This is a flowchart showing the manufacturing process of array sensor elements. [Figure 4] This figure shows an example of a polyimide pattern. [Figure 5] This graph shows the analysis results using the temperature-controlled desorption gas analysis method. [Figure 6] This is a diagram illustrating step S26. [Modes for carrying out the invention]

[0007] A. Embodiments: A1. Structure of array sensor elements: Figure 1 is a top view showing the schematic configuration of the array sensor element 1. Figure 1 shows arrows representing the mutually orthogonal X, Y, and Z directions. The X and Y directions are parallel to the horizontal plane. The Z direction is parallel to the vertical direction. The X, Y, and Z directions in Figure 1 and the X, Y, and Z directions in other figures point to the same directions. When specifying the direction, the positive direction indicated by the arrow is denoted as "+", and the negative direction opposite to the direction indicated by the arrow is denoted as "-", using both positive and negative signs in the direction notation. The +Z direction is also referred to as "up", and the -Z direction as "down".

[0008] The array sensor element 1 comprises a sensor substrate 100 and a plurality of sensor elements 2 arranged in an array on the sensor substrate 100. Figure 1 shows an example of an array sensor element 1 having 16 sensor elements 2. In the example shown in Figure 1, each sensor element 2 is arranged in a 4x4 array along the X and Y directions. Note that each sensor element 2 may be arranged in a so-called staggered arrangement, where they are arranged alternately in the X or Y direction. Furthermore, the number of sensor elements 2 in the array sensor element 1 is not limited to 16.

[0009] The sensor substrate 100 is a transparent substrate. For example, the sensor substrate 100 can be a substrate made of synthetic resin such as polyethylene, or a glass substrate such as silicate glass. A flexible substrate that can be bent may also be used as the sensor substrate 100. The shape of the sensor substrate 100 is a rectangular plate. However, the shape of the sensor substrate 100 may not be a rectangular plate; it may be a circular, elliptical, or polygonal plate.

[0010] The sensor element 2 has a structure in which multiple thin films, including electrodes, are stacked. The sensor element 2 comprises a first electrode 71, a functional layer 73, and a second electrode 77, which will be described later. The first electrode 71, the functional layer 73, and the second electrode 77 are stacked in this order from the +Z direction to the -Z direction. Hereafter, the -Z direction will also be referred to as the stacking direction.

[0011] Figure 2 is a cross-sectional view showing the cross-sectional structure of an example of a sensor element 2. In this embodiment, Figure 2 is used to illustrate and explain the case in which the sensor element 2 is a photodiode controlled by a TFT (Thin Film Transistor) and the array sensor element 1 is a sensor element that detects light. Note that the sensor element 2 is not limited to a photodiode controlled by a TFT, but may be a photodiode not controlled by a TFT, or it may be a piezoelectric sensor or a capacitive sensor instead of a photodiode.

[0012] As will be described later, each layer constituting the sensor element 2 formed on the sensor substrate 100 is formed on the glass substrate 10, which will be described later, in the manufacturing process described later, and then transferred to the sensor substrate 100. Therefore, each layer will be described in order in the order in which it is deposited on the glass substrate 10, that is, from the bottom to the top of the page in Figure 2.

[0013] The silicon insulating film 30 includes at least one of a silicon oxide film and a silicon nitride film. In this embodiment, the silicon insulating film 30 is a laminated film of a silicon oxide film and a silicon nitride film. The silicon oxide film has excellent insulating properties. The silicon nitride film is dense and has excellent barrier properties. Therefore, by laminating the silicon oxide film and the silicon nitride film, a silicon insulating film 30 with excellent insulating properties and barrier properties can be formed.

[0014] A TFT is formed on a silicon insulating film 30. The TFT has a silicon layer 41, a gate insulating film 42, a gate electrode 43, a first interlayer film 44, and a wiring layer 45. The silicon layer 41 is an amorphous silicon layer or a polysilicon layer. The gate insulating film 42 is, for example, a silicon oxide film. The gate electrode 43 and the wiring layer 45 are, for example, metal films. The first interlayer film 44 is, for example, a film containing at least one of a silicon oxide film and a silicon nitride film.

[0015] On the wiring layer 45, a first planarization film 50 and an insulating film 60 are formed in this order. The first planarization film 50 is a film containing, for example, a photosensitive resin. The insulating film 60 is a film containing at least one of, for example, a silicon oxide film and a silicon nitride film.

[0016] A sensor element 2 is formed on the insulating film 60. The sensor element 2 includes a first electrode 71, a second interlayer film 72, a functional layer 73, a second planarization film 76, and a second electrode 77. In this embodiment, the material of the first electrode 71 is molybdenum (Mo). The second interlayer film 72 is a film containing at least one of, for example, a silicon oxide film and a silicon nitride film.

[0017] The functional layer 73 includes a light absorption layer 731, a buffer layer 732, and an n-type semiconductor layer 733. In this embodiment, the functional layer 73 is a semiconductor that exhibits a photovoltaic effect, also called a CIGS-based element. Specifically, the light absorption layer 731 is a p-type semiconductor compound represented by the composition formula Cu(In,Ga)Se2. The buffer layer 732 is cadmium sulfide (CdS) which is an n-type semiconductor. The n-type semiconductor layer 733 is intrinsic zinc oxide (i-ZnO2) which is an intrinsic n-type semiconductor layer.

[0018] The second planarization film 76 is a film containing at least one of, for example, a silicon oxide film and a silicon nitride film. The second electrode 77 is a transparent electrode. In this embodiment, the material of the second electrode 77 is zinc oxide (ZnO2). Although not shown in FIG. 2, at least one of the first electrode 71 and the second electrode 77 is configured to be electrically connected to the wiring layer 45. Thereby, the sensor element 2 is controlled by a TFT. Also, although omitted in FIGS. 1 and 2, in the sensor substrate 100, terminals for electrically connecting an external device to the sensor element 2 or the TFT are formed around a plurality of sensor elements 2 arranged in an array. The terminals are formed using, for example, the same layer as the first electrode 71 and the same layer as the second electrode 77. In the following description, the laminate from the silicon layer 41 to the second electrode 77 is also referred to as an element layer LE.

[0019] The sensor substrate 100 is disposed on the second electrode 77 via an adhesive layer 110. The adhesive layer 110 is transparent, and for example, an epoxy-based adhesive or the like can be used as the adhesive layer 110.

[0020] As shown by the arrow in FIG. 2, when light is irradiated from the outside of the sensor substrate 100, the light is absorbed by the light absorption layer 731, and a current is generated between the first electrode 71 and the second electrode. The array sensor element 1 detects light using the current flowing between the first electrode 71 and the second electrode or the voltage between the first electrode 71 and the second electrode.

[0021] A2. Manufacturing method of the array sensor element: FIG. 3 is a flowchart showing the manufacturing process of the array sensor element 1. By performing this manufacturing process, the manufacturing method of the array sensor element 1 is realized. As shown in FIG. 3, in step S10, a glass substrate 10 shown in FIG. 6 described later is prepared. The glass substrate 10 is a transparent substrate. In the present embodiment, a non-alkali glass substrate is used as the glass substrate 10. A sensor element 2 is formed on the glass substrate 10. For this reason, the glass substrate 10 is preferably a substrate that is difficult to be altered in the manufacturing process of the sensor element 2. Specifically, the glass substrate 10 is preferably a substrate that is difficult to be altered by heating conditions in the manufacturing process or by irradiation with laser light. On the other hand, since the sensor substrate 100 included in the array sensor element 1 is not used in the manufacturing process of the sensor element 2, it does not necessarily have the property of being difficult to be altered in the manufacturing process. Thus, by separating the glass substrate 10 used in the manufacturing process and the sensor substrate 100 included in the array sensor element 1, the degree of freedom of the material of the sensor substrate 100 can be increased. Also, when the glass substrate 10 is more expensive than the sensor substrate 100, the manufacturing cost of the array sensor element 1 can be reduced by reusing the glass substrate 10.

[0022] In step S12 of Figure 3, a polyimide film 20 is formed on the glass substrate 10. Specifically, a liquid polyimide precursor is applied to the glass substrate 10 by spin coating. Subsequently, the glass substrate 10 coated with the polyimide precursor is subjected to a first firing at a firing temperature of 200°C or lower, and a second firing at a firing temperature of 400°C or higher. Through this chemical reaction, the polyimide precursor becomes polyimide. The polyimide precursor contains organic solvents such as NMP (N-methylpyrrolidone) and γ-butyrolactone. Therefore, by firing at a temperature lower than the boiling point of the organic solvent in the first firing and at a temperature higher than the boiling point of the organic solvent in the second firing, the residual organic solvent inside the polyimide film 20 is suppressed, and a polyimide film 20 with good film quality can be formed. If firing is performed only once at a temperature higher than the boiling point of the organic solvent, polyimide may form only on the surface of the polyimide precursor, while the organic solvent may remain inside the polyimide precursor.

[0023] In this embodiment, after a polyimide film 20 is formed on a glass substrate 10, patterning is performed using photolithography technology. Figure 4 shows an example of a polyimide pattern 20PE, which is the pattern of the polyimide film 20 formed by patterning. In this embodiment, one polyimide pattern 20PE corresponds to one array sensor element 1. Specifically, for example, if the glass substrate 10 is larger than the sensor substrate 100, and multiple patterns of element layers LE corresponding to one array sensor element 1 are formed on the glass substrate 10, the polyimide film 20 is patterned so that rectangular patterns corresponding to one array sensor element 1 are arranged in an array.

[0024] In step S14 of Figure 3, a silicon insulating film 30 is deposited on the polyimide film 20 using plasma CVD (Chemical Vapor Deposition) with silane gas as the raw material gas. The inventors have found that by setting the temperature of the glass substrate 10 to 330°C or lower during film deposition, a silicon insulating film 30 with good film quality can be deposited. Therefore, in step S14, film deposition is performed with the temperature of the glass substrate 10 set to 330°C or lower. This allows for the deposition of a silicon insulating film 30 with good film quality. As described above, in this embodiment, the silicon insulating film 30 is realized as a laminated film of a silicon oxide film and a silicon nitride film.

[0025] Figure 5 is a graph showing the analysis results using thermal desorption spectrometry (TDS). The horizontal axis of Figure 5 represents the substrate temperature [°C], and the vertical axis represents the chamber vacuum level [Torr]. The substrate temperature on the horizontal axis of Figure 5 is the temperature of the glass substrate 10 in the CVD apparatus. Separately, a correlation between the temperature of the sample stage of the analytical instrument used in the above analysis and the temperature of the glass substrate 10 has been obtained. Using this correlation, the temperature of the sample stage in the above analysis was converted to the temperature of the glass substrate 10, and Figure 5 was created. In other words, the horizontal axis of Figure 5 shows the temperature after the temperature of the sample stage obtained from the analysis has been converted to the temperature of the glass substrate 10. The sample analyzed by thermal desorption spectrometry is a sample in which a polyimide film 20 has been deposited on a glass substrate 10.

[0026] As shown in Figure 5, there is a vacuum peak around 120°C. Component analysis suggests that this peak is due to moisture released from the sample. There is also a vacuum peak around 370°C. Component analysis suggests that this peak is due to a gas containing carbon elements released from the polyimide film 20. From these results, it can be seen that in the film deposition process of step S14, by keeping the temperature of the glass substrate 10 below 330°C, the generation of gas containing elements contained in polyimide from the polyimide film 20 can be suppressed. In the CVD method, material gas is supplied into the chamber for film deposition. Therefore, if components other than the material gas of the silicon insulating film 30 are present in the chamber, these components will be included in the silicon insulating film 30, resulting in a deterioration of the film quality of the silicon insulating film 30. By keeping the temperature of the glass substrate 10 below 330°C, the generation of gases caused by polyimide can be suppressed, and the film quality of the silicon insulating film 30 can be improved.

[0027] Furthermore, in the manufacturing process, before forming the silicon insulating film 30, the temperature of the glass substrate 10 may be set to approximately 120°C or higher to remove moisture in the chamber of the CVD apparatus and moisture adhering to the glass substrate 10 and the polyimide film 20. This can improve the film quality of the silicon insulating film 30. In addition, the temperature of the glass substrate 10 is preferably 200°C or higher. This can accelerate the chemical reaction in the CVD method.

[0028] Furthermore, the method for depositing the silicon insulating film 30 is not limited to plasma CVD. Other CVD methods or PVD (Physical Vapor Deposition) methods may be used instead of plasma CVD. Regardless of the deposition method, by keeping the temperature of the glass substrate 10 below 330°C, gas generation from the polyimide film 20 can be suppressed, and a silicon insulating film 30 with good film quality can be formed.

[0029] The thickness of the silicon insulating film 30 is preferably 200 nm or more. This enhances the barrier function of the silicon insulating film 30 and suppresses the diffusion of organic components contained in the polyimide film 20 to the upper layer of the silicon insulating film 30.

[0030] As shown in Figure 3, a TFT is formed in step S16. Specifically, in step S16, the silicon layer 41, gate insulating film 42, gate electrode 43, first interlayer film 44, and wiring layer 45 are subjected to film deposition and patterning using photolithography to form the desired pattern. In addition, in step S16, a desired region of the silicon layer 41 is doped with impurities. This forms an n-type or p-type semiconductor.

[0031] In step S18, the first planarization film 50 is formed. In step S20, the insulating film 60 is formed. Although not shown in Figure 3, an etching process may be performed on the first planarization film 50 and the insulating film 60, for example, to form contact holes for electrical connection between the wiring layer 45 and the first electrode 71.

[0032] In step S22, the sensor element 2 is formed. Specifically, first, the first electrode 71 is deposited, and then patterning is performed using photolithography. Next, the second interlayer film 72 is deposited, and then patterning is performed using photolithography. Next, the light absorption layer 731, the buffer layer 732, and the n-type semiconductor layer 733 are deposited in sequence, and then patterning is performed using photolithography. Next, the second planarization film 76 is deposited, and then patterning is performed using photolithography. Next, the second electrode 77 is deposited, and then patterning is performed using photolithography. As a result, a layer structure in which the element layer LE is formed on the glass substrate 10 via the polyimide film 20 and the silicon insulating film 30 is completed. It is preferable that the temperature of the glass substrate 10 in each step from step S16 to step S22 be set to 330°C or lower. This suppresses the generation of gas from the polyimide film 20.

[0033] Unlike this embodiment, if the sensor element 2 is a piezoelectric sensor, a piezoelectric layer such as PZT (lead zirconate titanate) is formed as the functional layer 73.

[0034] In step S24, the sensor substrate 100 is bonded to the upper surface of the element layer LE via the adhesive layer 110.

[0035] In step S26, laser light is shone from below the glass substrate 10, and the glass substrate 10 is peeled off from the element layer LE.

[0036] Figure 6 illustrates step S26. As shown in Figure 6, laser light is irradiated from below the glass substrate 10. The irradiated laser light passes through the glass substrate 10 and reaches the polyimide film 20. As a result, the polyimide film 20 is removed by the laser light. It is presumed that the removal of the polyimide film 20 occurs when energy is supplied to the polyimide film 20, causing the bonds between the atoms of the polyimide to break and releasing atoms or molecules, resulting in the partial dissolution or transformation into a gas of the polyimide film 20. In this embodiment, an excimer laser is used as the laser. Note that the light used to remove the polyimide film 20 may be other laser light besides excimer laser light, and is not limited to laser light; infrared light may also be used.

[0037] In step S26 of Figure 3, after laser irradiation, an external force is applied to separate the glass substrate 10 from the element layer LE, thereby peeling the glass substrate 10 from the element layer LE. After peeling the glass substrate 10, a portion of the polyimide film 20 may remain on the underside of the element layer LE. In this case, an additional step may be added to remove the remaining portion of the polyimide film 20 using methods such as cleaning, etching, ashing, or polishing.

[0038] In step S28, the sensor substrate 100 is divided into units of polyimide pattern 20PE, and then a mounting process is performed to connect terminals formed on the sensor substrate 100, which are used for electrical connection to the sensor element 2 or TFT, and to make electrical connections to external equipment. The element layer LE is formed on the polyimide pattern 20PE. Therefore, in step S28, the sensor substrate 100 does not contain the polyimide film 20, but for convenience, one unit of the element layer LE in a plan view is described as a "polyimide pattern 20PE unit". In other words, in this embodiment, the sensor substrate 100 is divided such that one unit of the element layer LE is included in the divided sensor substrate 100.

[0039] Specifically, in the implementation process, for example, if the connection between the sensor substrate 100 and the external device is made using a printed circuit board, the terminals formed on the sensor substrate 100 and the terminals formed on the printed circuit board are electrically connected using the wire bonding method. For example, if the connection between the sensor substrate 100 and the external device is made using a flexible printed circuit board (FPC), the terminals formed on the sensor substrate 100 and the terminals formed on the flexible circuit board are bonded together. Step S28 is performed, electrically connecting the element layer LE and the external device. After step S28 is completed, this manufacturing process is finished.

[0040] According to the embodiment described above, the manufacturing process of the array sensor element 1 includes steps S12, S14, and S22. Step S12 is a step of forming a polyimide film 20 on a glass substrate 10. Step S14 is a step of forming a silicon insulating film 30 on the polyimide film 20. Step S22 is a step of forming an array of sensor elements 2, including a first electrode 71, a functional layer 73, and a second electrode 77, on the silicon insulating film 30. In step S14, the silicon insulating film 30 is formed when the temperature of the glass substrate 10 is set to 330°C or lower. This suppresses the generation of gas from the polyimide film 20 and makes it possible to form a silicon insulating film 30 with good film quality.

[0041] In step S14, the temperature of the glass substrate 10 is set to 200°C or higher. This promotes the chemical reaction during film formation. In step S14, the silicon insulating film 30 is formed using the plasma CVD method. In step S12, after the polyimide precursor is coated onto the glass substrate 10, the polyimide film 20 is formed by firing the polyimide precursor at a firing temperature of 400°C to 450°C. This allows for the formation of a polyimide film 20 with good film quality.

[0042] B. Other embodiments: (B1) In the above embodiment, the polyimide film 20 is patterned after it is formed in step S12. In another embodiment, for example, if the size of the glass substrate 10 and the size of the sensor substrate 100 are about the same, and one pattern of element layer LE corresponding to one array sensor element 1 is formed on the glass substrate 10, then the patterning of the polyimide film 20 does not need to be performed.

[0043] (B2) In the above embodiment, in step S28, the sensor substrate 100 is divided into units of one polyimide pattern 20PE. In other embodiments, the division unit of the sensor substrate 100 does not have to be one polyimide pattern 20PE. Specifically, in this embodiment, there is a one-to-one correspondence between the array sensor element 1 and the polyimide pattern 20PE. Unlike this embodiment, if there is a one-to-two correspondence between the array sensor element 1 and the polyimide pattern 20PE, for example, the sensor substrate 100 may be divided so that the divided sensor substrate 100 contains two polyimide patterns 20PE. In this case, in step S28, terminals formed on one of the two sensor substrates 100 and terminals formed on the other sensor substrate 100 are electrically connected.

[0044] (B3) In the above embodiment, in step S14, the temperature of the glass substrate is set to 200°C or higher. In another embodiment, the temperature of the glass substrate may be set to less than 200°C. At least in step S14, by setting the temperature of the glass substrate to 330°C or lower, the deterioration of the film quality of the silicon insulating film 30 due to gas emitted from the polyimide film 20 can be suppressed.

[0045] (B4) In the above embodiment, in step S12, the polyimide precursor is fired at a firing temperature of 400°C or more and 450°C or less. In other embodiments, the firing temperature of the polyimide precursor may be less than 400°C or higher than 450°C. Also, in the above embodiment, in step S12, two firings are performed with different firing temperatures. In other embodiments, one firing may be performed at the same firing temperature, or for example, firing may be performed by changing the firing temperature with respect to time.

[0046] (B5) In the above embodiment, the material of the first electrode 71 is Mo, and the material of the second electrode 77 is ZnO2. The materials of the first electrode 71 and the second electrode 77 are not limited to those described above. Preferably, the materials of the first electrode 71 and the second electrode 77 are selected according to the material of the functional layer 73. Furthermore, the functional layer 73 is not limited to a photodiode. The functional layer 73 may be a piezoelectric layer or a dielectric layer.

[0047] C. Other forms: This disclosure is not limited to the embodiments described above, and can be implemented in various forms without departing from its spirit. For example, this disclosure can also be implemented in the following forms. The technical features in the embodiments described below that correspond to the technical features in each of the forms described below can be replaced or combined as appropriate in order to solve some or all of the problems of this disclosure, or to achieve some or all of the effects of this disclosure. Furthermore, if such technical features are not described as essential in this specification, they can be deleted as appropriate.

[0048] (1) One embodiment of the present disclosure provides a method for manufacturing an array sensor element. This manufacturing method includes (a) a step of forming a polyimide film on a glass substrate, (b) a step of forming a silicon insulating film on the polyimide film, and (c) a step of forming an array of sensor elements on the silicon insulating film, the first electrode, the functional layer and the second electrode, wherein in step (b), the silicon insulating film is formed with the temperature of the glass substrate set to 330°C or lower. According to this embodiment, since the generation of gas from the polyimide film is suppressed in (b), a silicon insulating film with good film quality can be formed.

[0049] (2) In step (b) of the manufacturing method of the above embodiment, the temperature of the glass substrate may be set to 200°C or higher. According to this embodiment, the chemical reaction in the deposition of the silicon insulating film can be promoted in (b).

[0050] (3) In step (b) of the above-described manufacturing method, the silicon insulating film may be formed by plasma CVD.

[0051] (4) In step (a) of the manufacturing method of the above embodiment, the polyimide film may be formed by coating the polyimide precursor onto the glass substrate and then firing the polyimide precursor at a firing temperature of 400°C to 450°C. According to this embodiment, a polyimide film 20 with good film quality can be formed. [Explanation of Symbols]

[0052] 1…Array sensor element, 2…Sensor element, 10…Glass substrate, 20…Polyimide film, 20PE…Polyimide pattern, 30…Silicon insulating film, 41…Silicon layer, 42…Gate insulating film, 43…Gate electrode, 44…First interlayer film, 45…Wiring layer, 50…First planarization film, 60…Insulating film, 71…First electrode, 72…Second interlayer film, 73…Functional layer, 76…Second planarization film, 77…Second electrode, 100…Sensor substrate, 110…Adhesive layer, 731…Light absorption layer, 732…Buffer layer, 733…n-type semiconductor layer, LE…Element layer

Claims

1. A method for manufacturing an array sensor element, (a) A step of forming a polyimide film on a glass substrate, (b) A step of forming a silicon insulating film on the polyimide film, (c) The step of forming an array of sensor elements on the silicon insulating film, including a first electrode, a functional layer, and a second electrode, In step (b) above, the silicon insulating film is formed with the temperature of the glass substrate set to 330°C or lower. A method for manufacturing array sensor elements.

2. A method for manufacturing an array sensor element according to claim 1, In step (b) above, the temperature of the glass substrate is set to 200°C or higher. A method for manufacturing array sensor elements.

3. A method for manufacturing an array sensor element according to claim 1, In step (b) above, the silicon insulating film is formed by plasma CVD. A method for manufacturing array sensor elements.

4. A method for manufacturing an array sensor element according to claim 1, In step (a) above, after coating the glass substrate with a polyimide precursor, the polyimide film is formed by firing the polyimide precursor at a firing temperature of 400°C to 450°C. A method for manufacturing array sensor elements.

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