Processing method for single-crystal quartz material
Pre-heating the processing region with a heater and then using a laser to process single crystal quartz materials addresses the twinning issue by minimizing thermal thresholds and gradients, enhancing processing efficiency and reducing twinning.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- TXC CORP
- Filing Date
- 2025-02-10
- Publication Date
- 2026-06-01
AI Technical Summary
The existing laser processing of single crystal quartz materials at UV and IR wavelengths faces challenges with excessive heat accumulation and temperature gradients, leading to twinning issues.
A method involving pre-heating the processing region using a heater to reduce thermal thresholds, followed by laser processing to minimize heat accumulation and temperature gradients, thereby preventing twinning.
The method effectively reduces thermal thresholds and gradients, preventing twinning during the processing of single crystal quartz materials.
Smart Images
Figure 2026089632000001_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a processing method, and particularly to a processing method for single crystal quartz materials.
Background Art
[0002] Since the etching process includes a plurality of processes such as, for example, Physical Vapor Deposition (PVD), yellow light, and dry / wet etching, compared with the case of processing a material using etching, by using a laser, the process can be shortened, the processing cost can be reduced, the load on the etching station can be reduced, and the production efficiency can be improved.
[0003] Currently, an ultra-high speed laser is used for processing single crystal quartz, and the laser wavelength is mainly between the UV and IR wavelengths of 355 nm to 1064 nm. Since the transmittance of these wavelengths for quartz is all close to 90%, in processing, more energy is required to induce ablation on the surface of the quartz material, leading to the accumulation of excessive heat. If the local temperature becomes too high or the temperature gradient becomes too large, it will lead to the generation of twins.
Summary of the Invention
Problems to be Solved by the Invention
[0004] The present invention provides a processing method for single crystal quartz materials that reduces the difficulty of processing single crystal quartz materials by first raising the temperature of the single crystal quartz material before processing.
Means for Solving the Problems
[0005] The present invention provides a processing method for single crystal quartz materials that can effectively prevent the generation of twins after processing the single crystal quartz materials.
[0006] One embodiment of the present invention provides a method for processing a single-crystal quartz material, comprising the following steps: Determine the processing region of the single-crystal quartz material where twinning is likely to occur. Reduce the difficulty of processing the processing region by raising the temperature of the processing region on the single-crystal quartz material using a heater. Process the already heated portion of the processing region of the single-crystal quartz material using a laser. [Effects of the Invention]
[0007] Based on the above, in one embodiment of the present invention, a method for processing single-crystal quartz material includes using a heater to raise the temperature of the processing area on the single-crystal quartz material to reduce the difficulty of processing the processing area, and using a laser to process the already heated portion of the processing area on the single-crystal quartz material. Therefore, by raising the temperature of the processing area first, the thermal threshold required to produce a processing effect during the processing process is effectively reduced, heat accumulation or thermal effects are reduced, and the processing temperature and temperature gradient can be reduced. Due to the effect of reducing the processing temperature and temperature gradient as described above, the problem of twinning occurring during the processing process can be further prevented in the method for processing single-crystal quartz material. [Brief explanation of the drawing]
[0008] [Figure 1] This is a flowchart of a processing method for single-crystal quartz material according to one embodiment of the present invention. [Figure 2] This is a schematic diagram illustrating a method for processing single-crystal quartz material according to one embodiment of the present invention, in which a heater heats up the area to be processed on the single-crystal quartz material, and then a laser is used to process the area to be processed simultaneously. [Figure 3] This is a flowchart illustrating a method for processing single-crystal quartz material according to another embodiment of the present invention. [Figure 4] This is a schematic diagram illustrating a method for processing a single-crystal quartz material according to one embodiment of the present invention, in which a heater starts heating the area to be processed on the single-crystal quartz material, and then the area to be processed is processed by a laser along the path heated by the heater. [Figure 5] This is a detailed flowchart of step S100 in Figure 1 or Figure 3. [Figure 6] This is a detailed flowchart of step S100 in Figure 1 or Figure 3. [Figure 7] This is a detailed flowchart of step S200 in Figure 1 or Figure 3. [Figure 8] This is a method for processing single-crystal quartz material according to another embodiment of the present invention, and a detailed flowchart of step S100 in Figure 1 or Figure 3. [Figure 9] This is a schematic diagram showing a specific angle or position of a crystal on a single crystal quartz material in a processing method for single crystal quartz material according to one embodiment of the present invention. [Modes for carrying out the invention]
[0009] Figure 1 is a flowchart of a method for processing a single-crystal quartz material according to one embodiment of the present invention. Figure 2 is a schematic diagram of a method for processing a single-crystal quartz material according to one embodiment of the present invention, in which a heater heats up the processing area on the single-crystal quartz material, and then a laser is used to process the processing area simultaneously. Referring to Figures 1 and 2, one embodiment of the present invention provides a method for processing a single-crystal quartz material that includes the following steps. In step S10, the processing area A of the single-crystal quartz material M, where twinning is likely to occur, is determined. In step S100, the processing area A on the single-crystal quartz material M is heated using a heater 100 to reduce the difficulty of processing the processing area A. In step S200, the already heated portion of the processing area A of the single-crystal quartz material M is processed using a laser 200. Of these, the range in which the heating of the single-crystal quartz material M is performed using the heater 100 may be larger than the processing area A, or it may cover the processing area A. Furthermore, if the workpiece to be processed includes single-crystal quartz material M and other objects, the heating range achieved using the heater 100 may be greater than the entire range of the single-crystal quartz material M.
[0010] In this embodiment, the single-crystal quartz material M is, for example, α-SiO2 with a temperature T < 573°C. The heater 100 raises the temperature of the area to be processed A, for example, directly / indirectly or by contact / non-contact. For example, the heater 100 may be a non-contact heater such as a laser light source or an infrared heater, or it may be a contact heater such as a heater stage used to mount the single-crystal quartz material M, but the present invention is not limited thereto.
[0011] In this embodiment, the method for processing single-crystal quartz material further includes the following steps. Step S300 involves heating the area A to be processed on the single-crystal quartz material M with a heater 100, and then processing the area A using a laser 200.
[0012] In this case, if the heater 100 is a laser light source, the beam size of the beam L1 emitted by the laser light source irradiated onto the processing area A is larger than the beam size of the beam L2 emitted by the laser 200 irradiated onto the processing area A. In other words, the beam L1 emitted by the laser light source is focused solely on raising the temperature of the processing area A, and it is necessary to avoid the temperature or temperature gradient becoming too high and causing twinning during the heating process. Therefore, the beam size of the beam L1 irradiated onto the processing area A is larger than the beam size of the beam L2 irradiated onto the processing area A. Furthermore, the wavelength of the beam L1 emitted by the laser light source may be the same as the wavelength of the beam L2 emitted by the laser 200. However, in a preferred embodiment, the wavelength of the beam L1 emitted by the laser light source is different from the wavelength of the beam L2 emitted by the laser 200.
[0013] Figure 3 is a flowchart of a method for processing a single-crystal quartz material according to another embodiment of the present invention. Figure 4 is a schematic diagram of a method for processing a single-crystal quartz material according to one embodiment of the present invention, in which a heater starts to raise the temperature of the area to be processed on the single-crystal quartz material, and then the laser processes the area along the path that the heater has heated. Referring to Figures 3 and 4, in this embodiment, the method for processing a single-crystal quartz material further includes the following steps. In step S300', after the heater 100 starts to raise the temperature of the area to be processed A on the single-crystal quartz material M, the laser 200 processes the area along the path that the heater 100 has heated the area A.
[0014] Figure 5 is a detailed flowchart of step S100 in Figure 1 or Figure 3. Referring to Figure 5, in this embodiment, step S100 includes the following steps: Step S120 controls the energy that the heater 100 applies to the area A to be processed on the single crystal quartz material M so that the temperature gradient of the area A to be processed is below the upper limit of the temperature gradient during the process in which the heater 100 heats the area A to be processed on the single crystal quartz material M.
[0015] Figure 6 is a detailed flowchart of step S100 in Figure 1 or Figure 3. Referring to Figure 6, in this embodiment, step S100 further includes the following steps: Step S140 controls the stored energy that the heater 100 applies to the area A to be processed in the process of heating the area A of the single crystal quartz material M, such that the temperature of the area A to be processed remains below the temperature limit. The temperature limit is, for example, 573 degrees Celsius.
[0016] In other words, by controlling the instantaneous energy and stored energy applied to the processing region A during the heating process, twinning of the single-crystal quartz material M during heating is prevented.
[0017] FIG. 7 is a detailed flowchart of step S200 in FIG. 1 or FIG. 3. Referring to FIG. 7, in this embodiment, the above step S200 further includes the following steps. In step S220, during machining with the laser 200, maintain a temperature difference of 20 degrees or more between the machining location of the laser 200 and the unheated portion of the machining region A, or the machined and cooled portion. That is, the machined location that has already been heated maintains a temperature difference of at least 20 degrees or more from at least other locations. Therefore, machining can be performed with a time difference that maintains a temperature difference of at least 20 degrees or more while continuously heating or heating first and before cooling down.
[0018] FIG. 8 is a detailed flowchart of the processing method of the single crystal quartz material according to another embodiment of the present invention and step S100 in FIG. 1 or FIG. 3. Referring to FIG. 8, in another embodiment, the above step S100 further includes the following steps. In step S160'', heat the single crystal quartz material M along a specific angle and specific position of the crystal of the single crystal quartz material M. That is, in the heating process, preferentially heat the specific angles and specific positions where twins are likely to occur, thereby further preventing the occurrence of twins during the machining process.
[0019] FIG. 9 is a schematic diagram showing a specific angle or specific position of the crystal on the single crystal quartz material in the processing method of the single crystal quartz material according to an embodiment of the present invention. Taking FIG. 9 as an example, when the single crystal quartz material M is cut by AT cut, on the X-Z plane of the single crystal quartz material M, there is a first twin zone R1 where twins are likely to occur at the upper left corner of the zone R, and there is a second twin zone R2 where twins are likely to occur at a position 180 degrees with respect to the first twin zone R1. Therefore, in the above step S160'', modify the first twin zone R1 and the second twin zone R2 preferentially. However, the present invention does not limit the positions or angles of the above-mentioned first twin zone R1 and second twin zone R2. The specific angles and specific positions of the crystal on the single crystal quartz material M are determined by the characteristics during the machining of the single crystal quartz material M.
[0020] Briefly, in one embodiment of the present invention, the processing method of a single-crystal quartz material includes the following steps. A heater is used to raise the temperature of the processing region on the single-crystal quartz material to reduce the processing difficulty of the processing region. For the single-crystal quartz material, a laser is used to process the already heated portion in the processing region. Therefore, by heating the processing region first, the thermal threshold value required to produce a processing effect during the processing process is effectively reduced, heat accumulation or thermal influence is reduced, and thereby the processing temperature and temperature gradient can be reduced. Due to the effect that the above-mentioned processing temperature and temperature gradient can be reduced, the problem of twin generation during the processing process in the processing method of the single-crystal quartz material can be further prevented.
Industrial Applicability
[0021] The single-crystal quartz material and the processing method of the present invention can effectively prevent the problem of twin generation during the processing of the single-crystal quartz material, and can be applied to processing processes such as reactive ion etching, sputtering, laser processing, dry or wet etching, and semiconductor manufacturing processes (but not limited to these).
Explanation of Signs
[0022] S10, S100, S120, S140, S160'', S200, S220, S300, S300': Steps 100: Heater 200: Laser L1, L2: Beam A: Processing region M: Single-crystal quartz material
Claims
1. To determine the processing region in single-crystal silica material where twinning is likely to occur. To reduce the difficulty of machining the area to be machined on the single-crystal quartz material by using a heater to raise the temperature of the area to be machined, A method for processing a single crystal quartz material, comprising processing the already heated portion of the region to be processed using a laser.
2. The process of processing the already heated portion of the area to be processed in the single-crystal quartz material using the laser is as follows: A method for processing a single-crystal quartz material according to claim 1, comprising the step of maintaining a temperature difference of 20 degrees or more between the laser processing area and the unheated portion of the processing area, or the already processed and cooled portion, during the laser processing.
3. The method for processing a single crystal quartz material according to claim 1, wherein the heater is a laser light source, an infrared heater, or a heater stage used to mount the single crystal quartz material.
4. The method for processing a single crystal quartz material according to claim 1, further comprising heating the area to be processed on the single crystal quartz material with the heater, and then processing the area to be processed using the laser.
5. The method for processing a single crystal quartz material according to claim 1, wherein after the heater starts heating the area to be processed on the single crystal quartz material, the laser processes the area to be processed along the path through which the heater has heated the area to be processed.
6. The method for processing a single crystal quartz material according to claim 1, wherein the heater is a laser light source, and the beam size of the beam emitted by the laser light source irradiated onto the processing area is greater than the beam size of the beam emitted by the laser irradiated onto the processing area.
7. The method for processing a single crystal quartz material according to claim 1, wherein the heater is a laser light source, and the wavelength of the beam emitted by the laser light source is different from the wavelength of the beam emitted by the laser.
8. The step of heating the area to be processed on the single crystal quartz material with the heater is as follows: The method for processing a single crystal quartz material according to claim 1, further comprising controlling the energy applied by the heater to the processing region on the single crystal quartz material during the process in which the heater heats the processing region on the single crystal quartz material, such that the temperature gradient of the processing region is below the upper limit of the temperature gradient.
9. The step of heating the area to be processed on the single crystal quartz material with the heater is as follows: A method for processing a single crystal quartz material according to claim 1, comprising controlling the stored energy applied by the heater to the processing region on the single crystal quartz material during the process in which the heater heats the processing region on the single crystal quartz material, such that the temperature of the processing region falls below a temperature limit.
10. The method for processing a single crystal quartz material according to claim 9, wherein the upper temperature limit is 573 degrees Celsius.
11. The step of heating the area to be processed on the single crystal quartz material with the heater is as follows: A method for processing a single crystal quartz material according to claim 1, comprising heating the single crystal quartz material along a specific angle and a specific position of the crystal of the single crystal quartz material.