Glass core for packaging, packaging substrate, and method for manufacturing a glass core for packaging.
The packaging glass core addresses thickness mismatches by using a glass plate with a cavity and die block, enhancing workability and reliability in semiconductor packaging through stable electrical connections.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- ABSOLICS INC
- Filing Date
- 2025-11-17
- Publication Date
- 2026-06-03
AI Technical Summary
Existing semiconductor packaging technologies fail to effectively manage the thickness mismatch between dies and glass cores, leading to inefficiencies in forming redistribution layers and compromising electrical performance.
A packaging glass core with a glass plate, through vias, and a cavity that accommodates semiconductor elements, utilizing a die block and glass spacer to mitigate thickness differences, along with a redistribution layer and conductive/insulating layers for stable electrical connections.
Improves workability and reliability by minimizing thickness discrepancies, enabling efficient formation of redistribution layers and providing non-conductive properties suitable for semiconductor packaging.
Smart Images

Figure 2026091269000001_ABST
Abstract
Description
Technical Field
[0001] Embodiments relate to a glass core for packaging, a packaging substrate, a method for manufacturing a glass core for packaging, and the like.
Background Art
[0002] In fabricating electronic components, forming a circuit on a semiconductor wafer is referred to as the front-end process (FE), and assembling the wafer into a state where it can be used as an actual product is referred to as the back-end process (BE). The back-end process includes a packaging process.
[0003] The four core technologies of the semiconductor industry that have enabled the rapid development of recent electronic products are semiconductor technology, semiconductor packaging technology, manufacturing process technology, and software technology.
[0004] Semiconductor technology has developed into various forms such as line widths in nano units below micro, over ten million cells, high-speed operation, and a large amount of heat dissipation. However, relatively, there is no technology that perfectly packages this.
[0005] Therefore, the electrical performance of a semiconductor may sometimes be determined by packaging technology and the electrical connections thereby, rather than the performance of the semiconductor technology itself.
[0006] As materials for packaging substrates, ceramics or resins are applied. In the case of a ceramic substrate such as a silicon substrate, it is not easy to mount high-performance high-frequency semiconductor elements because of its high resistance value or high dielectric constant. In the case of a resin substrate, relatively high-performance high-frequency semiconductor elements can be mounted. However, there is a limit to reducing the wiring pitch.
[0007] Recently, silicon and glass can be applied to high-end packaging substrates. By forming through-holes in silicon or glass substrates and applying conductive materials to these holes, the wiring length between the device and the motherboard can be shortened, resulting in superior electrical characteristics.
[0008] Related prior art includes Korean Registered Patent No. 10-2499039, Korean Registered Patent No. 10-1925372, and Korean Registered Patent No. 10-2580122. [Overview of the Initiative] [Problems that the invention aims to solve]
[0009] The objective of this embodiment is to provide a glass core for packaging that improves workability and reliability by mitigating the difference in thickness when embedding a die in the cavity of the glass core.
[0010] Another objective of this embodiment is to provide a packaging glass core and a packaging substrate that can reduce the height difference between the die embedded in the cavity and the surface of the glass core, thereby enabling more efficient formation of the redistribution layer.
[0011] Another objective of the embodiment is to provide a glass core for packaging, a packaging substrate, and a method for manufacturing the same, which are useful for application to semiconductor packaging and have excellent non-conductive properties that distinguish them from wafers and fine wiring representation capabilities that distinguish them from prepregs, by applying a glass core. [Means for solving the problem]
[0012] To achieve the above objective, the packaging glass core according to the embodiment includes a glass plate having a first surface and a second surface facing each other, through vias penetrating the glass plate in the thickness direction, and a cavity penetrating the first surface and the second surface, allowing for the placement of semiconductor elements inside.
[0013] The aforementioned cavity provides a cavity space enclosed by the inner wall of the cavity.
[0014] The cavity inner wall is the inner wall surface of the glass plate that connects the first surface of the glass plate and the second surface of the glass plate.
[0015] The die block is placed in the cavity space.
[0016] The die block may have a cavity die, which is a die placed inside the cavity, and a glass spacer arranged above and below it.
[0017] A distribution material may be placed between the inner wall of the cavity and the die block.
[0018] The die block may further include a die adhesive layer, which is an adhesive layer.
[0019] The die bonding layer may be placed between the cavity die and the glass spacer.
[0020] The thickness of the cavity die may be 90% or less of the thickness of the glass plate.
[0021] The die block has a first surface and a second surface that face each other, and the first surface of the glass plate and the first surface of the die block, or the second surface of the glass plate and the second surface of the die block, may be arranged substantially on the same line.
[0022] The cavity die has a first surface that contacts the glass spacer and a second surface that faces the first surface, and electrodes of the cavity die may be arranged on the second surface of the cavity die.
[0023] Cavity redistribution wiring is further arranged on one or the other surface of the cavity die, and the cavity redistribution wiring may be redistribution wiring that transmits the electrical signals of the cavity die to the outside of the cavity.
[0024] The thickness of the glass spacer can be 10% or more of the thickness of the plate glass.
[0025] The thickness (Td) from the upper surface of the cavity die to the bottom surface of the glass spacer of the dive block can be 40 μm or more.
[0026] A through electrode can be disposed in the through hole.
[0027] The through electrode transmits an electrical signal between the first surface and the second surface of the plate glass.
[0028] The through electrode can have a through electrode pad that is a pad disposed on at least one of the first surface and the second surface of the plate glass.
[0029] The pad disposed at one end of the electrode of the cavity die is an electrode pad of the cavity die.
[0030] Based on the surface of the through electrode pad, the surface of the electrode pad of the cavity die can be disposed within a range of -100 μm to +100 μm in the thickness direction of the glass core.
[0031] To achieve the above object, a packaging substrate according to another embodiment includes the above-described packaging glass core and an upper rewiring layer disposed on the packaging glass core.
[0032] The upper rewiring layer includes an upper electrically conductive layer and an upper insulating layer.
[0033] The upper electrically conductive layer is a layer in which the electrically conductive layers are connected in a pattern, and the upper insulating layer is one in which the upper electrically conductive layer is disposed inside.
[0034] To achieve the above objective, a method for manufacturing a packaging glass core according to another embodiment includes an arrangement step of arranging a plate glass with a cavity and a die block on a carrier to obtain an assembly; a distribution step of arranging a distribution material between the inner wall of the cavity of the assembly and the die block to provide a fixing body; and a fixing step of removing the carrier from the fixing body to obtain a packaging glass core.
[0035] The carrier can detachably fix the positions of the glass plate and the die block.
[0036] The glass plate is a plate-shaped glass having a first surface and a second surface facing each other, the glass plate has a cavity and through vias arranged therein, the through vias penetrate the glass plate in the thickness direction, and the cavity provides a cavity space surrounded by an inner wall of the cavity.
[0037] The cavity inner wall is one surface of the glass plate as seen from the cavity, and is an inner wall surface connecting the first surface of the glass plate and the second surface of the glass plate, and the cavity space allows for the placement of a cavity die. The cavity die is a die placed inside the cavity.
[0038] The die block consists of the cavity die and glass spacer arranged vertically.
[0039] The carrier may include a support layer and an adhesive layer disposed on the support layer.
[0040] The adhesive layer may have adhesive strength that changes upon irradiation with ultraviolet light.
[0041] The die block may be provided by a die block manufacturing step.
[0042] The die block manufacturing step includes a die placement step of arranging one or more cavity dies at intervals on a spacer glass to provide placement material, and a die separation step of dicing the positions at the intervals to separate the placement material and obtain a die block.
[0043] The polishing step may be applied after the die placement step.
[0044] The spacer glass has a first surface on which the cavity die is placed and a second surface facing the placement surface, and the polishing process is a step of grinding the surface of the second surface of the spacer glass.
[0045] The glass spacer may have a thickness exceeding 300 μm.
[0046] The glass spacer may have a thickness of 300 μm or less.
[0047] The method for manufacturing the glass core for packaging may further include an electrode formation step.
[0048] The electrode formation step may be performed before the placement step or after the fixing step.
[0049] The electrode formation step is the step of forming an electrode in the through via to provide a through electrode.
[0050] The electrodes of the cavity die are electrodes arranged on one surface of the cavity die.
[0051] The glass spacer has a first surface and a second surface that face each other, and the second surface of the glass plate and the second surface of the glass spacer can be arranged substantially on the same plane.
[0052] The electrodes of the cavity die may be arranged substantially coplanar with the first surface of the glass plate, or they may be arranged to protrude beyond the coplanar plane.
[0053] The distribution step may include a first step of placing a film-like distribution material between the assemblies; a second step of embedding the distribution material between the cavity inner wall and the die block through vacuum lamination; and a third step of heat-treating the assemblies at least once to induce hardening of the distribution material and fix the distribution material in place.
[0054] In the aforementioned arrangement step, the glass plate may have through electrodes placed in part of the through vias, with the remaining portion being an empty space.
[0055] The arrangement of the distribution material in the distribution step and the arrangement of the insulating material in the empty space of the through electrode can be performed simultaneously.
[0056] The aforementioned distribution material may be an organic material or an organic-inorganic composite material.
[0057] The organic material may include epoxy resin or acrylic resin.
[0058] The aforementioned organic-inorganic composite material may contain insulating particles and a binder.
[0059] The binder may include epoxy resin or acrylic resin. [Effects of the Invention]
[0060] The implemented examples of packaging glass cores, packaging substrates, and manufacturing methods for packaging glass cores can improve workability and reliability by mitigating thickness differences when embedding dies in the cavity of the glass core. Furthermore, by reducing the height difference between the die embedded in the cavity and the surface of the glass core, the redistribution layer can be formed more efficiently. In addition, these are useful for application in semiconductor packaging, and by applying the glass core, it is possible to provide packaging glass cores that possess excellent non-conductive properties distinct from wafers and fine wiring representation capabilities distinct from prepregs. [Brief explanation of the drawing]
[0061] [Figure 1] This is a conceptual diagram illustrating a cross-section of a glass core used for packaging, as seen in a concrete example. [Figure 2] This is a conceptual diagram illustrating a cross-section of a glass core for packaging related to other concrete examples. [Figure 3] Furthermore, this is a conceptual diagram illustrating a cross-section of a glass core for packaging related to other concrete examples. [Figure 4] Furthermore, this is a conceptual diagram illustrating a cross-section of a glass core for packaging related to other concrete examples. [Figure 5] This is a conceptual diagram illustrating a cross-sectional view of a packaging substrate related to a concrete example. [Figure 6A] This is a conceptual diagram illustrating the manufacturing process of a die block related to a real-world example, shown in cross-section. [Figure 6B] This is a conceptual diagram illustrating the manufacturing process of a die block related to a real-world example, shown in cross-section. [Figure 6C] This is a conceptual diagram illustrating the manufacturing process of a die block related to a real-world example, shown in cross-section. [Figure 7A] This is a conceptual diagram illustrating the process of manufacturing a glass core for packaging, as shown in cross-section, as an example of its application. [Figure 7B] This is a conceptual diagram illustrating the process of manufacturing a glass core for packaging, as shown in cross-section, as an example of its application. [Figure 7C] This is a conceptual diagram illustrating the process of manufacturing a glass core for packaging, as shown in cross-section, as an example of its application. [Figure 7D] This is a conceptual diagram illustrating the process of manufacturing a glass core for packaging, as shown in cross-section, as an example of its application. [Figure 7E] This is a conceptual diagram illustrating the process of manufacturing a glass core for packaging, as shown in cross-section, as an example of its application. [Best Mode for Carrying Out the Invention]
[0062] The embodiments are described below in detail with reference to the accompanying drawings, so that they can be easily implemented by a person with ordinary skill in the art to which the embodiments belong. However, the embodiments can be realized in a variety of different forms and are not limited to the embodiments described herein. Similar parts are denoted by the same reference numerals throughout the specification.
[0063] Throughout this specification, the term “these combinations” as used in any expression in Markush form means one or more mixtures or combinations selected from the group of components described in the Markush form, and includes one or more of those components.
[0064] Throughout this specification, terms such as “First,” “Second,” or “A,” “B” are used to distinguish identical terms from one another. Furthermore, singular expressions include plural expressions unless the context clearly indicates otherwise.
[0065] In this specification, "~system" may mean that the compound contains a compound corresponding to "~" or a derivative of "~".
[0066] In this specification, the meaning of B being located on A means either B being in direct contact with A, or B being located on A with other layers located between them, and is not limited to B being in contact with the surface of A.
[0067] In this specification, the meaning of B being connected to A means either that A and B are directly connected, or that A and B are connected through other components between them, and is not limited to the direct connection of A and B unless otherwise specified.
[0068] Prepregs are a form in which glass fibers are impregnated with polymer resin and have been used as a support for packaging substrates. However, there were limitations in forming fine wiring. Silicon substrates, which allow for the formation of finer wiring, have been used as a support for packaging substrates. However, silicon substrates have the disadvantage of reduced efficiency in high-frequency signal transmission because they themselves possess semiconductor properties. The inventors have applied plate glass as a support for packaging substrates. Plate glass processed to be used as a support for packaging substrates is called a glass core.
[0069] Glass cores offer several advantages when used as a support for packaging substrates. Specifically, glass cores can be manufactured over large areas, and the creation of large-area cavities is relatively easy using methods such as etching. Furthermore, even when high-frequency elements are mounted, there is almost no possibility of parasitic elements forming. However, glass cores also have disadvantages when used as a support for packaging substrates. Glass is prone to breakage. Glass cores are relatively susceptible to impact and relatively brittle. These disadvantages can become even more pronounced when glass cores are applied in thin layers.
[0070] The inventors noticed a mismatch between the thickness of the die and the thickness of the glass core when inserting the die into the cavity of the glass core. They then proposed the use of a glass spacer as a means to resolve this mismatch.
[0071] Glass core for packaging Figure 1 is a conceptual diagram illustrating a cross-sectional view of a glass core for packaging in an example of implementation; Figure 2 is a conceptual diagram illustrating a cross-sectional view of a glass core for packaging in another example of implementation; Figure 3 is a conceptual diagram illustrating a cross-sectional view of a glass core for packaging in yet another example of implementation; and Figure 4 is a conceptual diagram illustrating a cross-sectional view of a glass core for packaging in yet another example of implementation. The examples will be explained in more detail below with reference to Figures 1 to 4.
[0072] To achieve the above objective, a packaging glass core 90 according to one embodiment of the embodiment includes a glass plate 20 having a first surface and a second surface facing each other, through vias 30 penetrating the glass plate 20 in the thickness direction, and a cavity 40 penetrating the first surface and the second surface and allowing the placement of semiconductor elements inside.
[0073] The plate glass 20 is preferably a plate glass used for semiconductors, and may, but is not limited to, borosilicate plate glass or alkali-free plate glass.
[0074] The through via 30 is a via that penetrates the glass plate 20 in the thickness direction. A large number of these through vias 30 can be arranged on the glass plate 20.
[0075] A through electrode 310 may be placed in the through via 30.
[0076] The through electrode 310 can connect the electrical signals between the first and second surfaces of the glass plate 20.
[0077] The through electrode 310 may be one in which all of the through vias 30 are filled with an electrically conductive layer.
[0078] The through electrode 310 may have an electrically conductive layer disposed on a portion of the through via 30. The electrically conductive layer may be disposed on the inner wall surface of the through via 30. In this case, the portion of the through electrode 310 where the electrically conductive layer is not disposed may be empty or filled with an insulating layer.
[0079] The through electrode 310 may have a through electrode pad 312, which is a pad placed on at least one of the first and second surfaces of the glass plate 20.
[0080] The cavity 40 provides a cavity space enclosed by the inner wall of the cavity.
[0081] The cavity inner wall is one surface of the glass plate 20 as seen from the cavity, and is the inner wall surface of the glass plate 20 that is connected to the first surface and the second surface of the glass plate 20.
[0082] The die block 50 is placed in the cavity space.
[0083] The die block 50 consists of a cavity die 530 and a glass spacer 510 arranged vertically.
[0084] The cavity die 530 refers to the die positioned within the cavity 40.
[0085] The cavity die 530 may, for example, be fitted with a silicon chip (Si Chip).
[0086] The cavity die 530 may, for example, be fitted with a silicon carbide chip (SiC chip).
[0087] The cavity die 530 may, for example, be fitted with passive components. These passive components may include capacitors, power transfer elements, and the like.
[0088] The cavity die 530 may, for example, be fitted with active elements. Active elements include computing elements such as CPUs and GPUs, and memory elements such as memory chips.
[0089] The die block 50 may further include a die adhesive layer 520, which is an adhesive layer.
[0090] The die adhesive layer 520 is positioned between the cavity die 530 and the glass spacer 510, and can fix their relative positions.
[0091] The die adhesive layer may be an adhesive layer applied to semiconductor processes, and for example, a silicon adhesive layer, an acrylic adhesive layer, or the like may be applied.
[0092] The die block 50 has a first surface and a second surface that face each other.
[0093] The first surface of the glass plate 20 and the first surface of the die block 50 may be arranged substantially on the same line. In this case, the cavity die may be positioned on the second surface side of the die block 50.
[0094] The second surface of the glass plate 20 and the second surface of the die block 50 may be arranged substantially on the same line. In this case, a cavity die may be arranged on the side of the first surface of the die block (as illustrated in the drawing).
[0095] The cavity die 530 has a first surface that contacts the glass spacer 510 and a second surface that faces the first surface, and the electrode 540 of the cavity die can be placed on the second surface of the cavity die 530.
[0096] A pad may be placed at the end of the electrode 540 of the cavity die. The pad is referred to as the electrode pad 542 of the cavity die.
[0097] The electrode 540 of the cavity die may be arranged substantially in the same plane as the surface of the glass plate 20.
[0098] The electrode 540 of the cavity die may be positioned to protrude beyond the surface of the glass plate 20.
[0099] The height difference between the surface of the electrode pad 542 of the cavity die and the surface of the through-electrode pad 312 may be within 100 μm. The difference may be 80 μm or less, 70 μm or less, 60 μm or less, 50 μm or less, 40 μm or less, 30 μm or less, or 20 μm or less. The difference may be 0 μm or more, or 1 μm or more. A difference of 0 μm means that the positions of the two surfaces are substantially the same.
[0100] Specifically, with respect to the surface of the electrode pad 542 of the cavity die, the surface of the through-electrode pad 312 may be positioned within a range of -100 μm to +100 μm in the thickness direction of the glass core. With respect to the surface of the electrode pad 542 of the cavity die, the surface of the through-electrode pad 312 may be positioned within a range of -80 μm to +80 μm in the thickness direction of the glass core. With respect to the surface of the electrode pad 542 of the cavity die, the surface of the through-electrode pad 312 may be positioned within a range of -70 μm to +70 μm in the thickness direction of the glass core. With respect to the surface of the electrode pad 542 of the cavity die, the surface of the through-electrode pad 312 may be positioned within a range of -60 μm to +60 μm in the thickness direction of the glass core. With respect to the surface of the electrode pad 542 of the cavity die, the surface of the through-electrode pad 312 may be positioned within a range of -50 μm to +50 μm in the thickness direction of the glass core. With respect to the surface of the electrode pad 542 of the cavity die, the surface of the through-electrode pad 312 may be positioned within a range of -40 μm to +40 μm in the thickness direction of the glass core. With respect to the surface of the electrode pad 542 of the cavity die, the surface of the through-electrode pad 312 may be positioned within a range of -30 μm to +30 μm in the thickness direction of the glass core. With respect to the surface of the electrode pad 542 of the cavity die, the surface of the through-electrode pad 312 may be positioned within a range of -20 μm to +20 μm in the thickness direction of the glass core.
[0101] In such cases, controlling the positions of the electrodes and through-electrodes of the cavity die placed within the cavity to be within a certain range can make it easier to subsequently form the wiring layers connected to them. Furthermore, stable wiring connections are possible, which is even more advantageous for stable electrical signal connections.
[0102] If necessary, cavity redistribution wiring (not shown) may be further arranged on one or the other surface of the cavity die 530. In this case, cavity redistribution wiring means a wiring layer formed within the cavity. Specifically, the cavity redistribution wiring may be redistribution wiring that transmits electrical signals of the cavity die 530 to the outside of the cavity.
[0103] A dispense material 410 is placed between the cavity inner wall and the die block. The dispense material fills the space between the cavity inner wall and the die block, fixing their relative positions.
[0104] The distribution material may, for example, be an insulating material.
[0105] The insulating material may be an organic material or an organic-inorganic composite material.
[0106] The insulating material may include a polymer resin, a mixed material of a polymer resin and a filler (such as inorganic particles, organic particles, or organic-inorganic composite particles), or an inorganic vapor-deposited layer.
[0107] The aforementioned polymer resin may be acrylic resin, epoxy resin, or a modified resin thereof, and a material suitable for use in electronic devices for purposes such as molding may be used. For example, LCP (liquid crystal polymer) may be used.
[0108] The aforementioned mixed material may be a mixture of acrylic resin and filler, a mixture of acrylic resin and epoxy resin and filler, or a mixture of epoxy resin and filler. The filler may be inorganic particles, and silica particles may be used as an example.
[0109] The aforementioned distribution material may be a commercially available product such as ABF (Ajinomoto Build-up Film), EMC (Epoxy Molding Compound), MPI (Modified Polyimide), CUF (Capillary Underfill) material, NCF (Non-Conductive Films), or NCP (Non-Conductive Pastes).
[0110] The distribution material can be transformed into a fluid form, placed within the packaging glass core while filling the space between the cavity inner wall and the die block, and then cured. For example, the distribution material can be fluidized by heating, placed in the appropriate position, and then fixed in place within the cavity inner wall by methods such as thermosetting.
[0111] The thickness of the cavity die 530 may be thinner than the thickness of the glass plate 20. Specifically, the thickness of the cavity die 530 may be 90% or less of the thickness of the glass plate 20. The thickness of the cavity die 530 may be 85% or less, 80% or less, 75% or less, 70% or less, 65% or less, 60% or less, 55% or less, 50% or less, 45% or less, 40% or less, 35% or less, 30% or less, or 25% or less of the thickness of the glass plate 20. The thickness of the cavity die 530 may be 10% or more, or 15% or more of the thickness of the glass plate 20. Specifically, the thickness of the cavity die 530 may be 50% to 60% of the thickness of the glass plate 20.
[0112] The thickness of the glass spacer 510 may be 10% or more of the thickness of the glass plate 20. The thickness of the glass spacer 510 may be 15% or more, 20% or more, 25% or more, 30% or more, 35% or more, 40% or more, 45% or more, 50% or more, 55% or more, 60% or more, 65% or more, 70% or more, 75% or more, 80% or more, or 85% or more of the thickness of the glass plate 20. The thickness of the glass spacer 510 may be 90% or less, or 85% or less of the thickness of the glass plate 20. Specifically, the thickness of the glass spacer 510 may be 60% to 80% of the thickness of the glass plate 20. Specifically, the thickness of the glass spacer 510 may be 40% to 50% of the thickness of the glass plate 20.
[0113] The thickness of the glass spacer 510 may be 600 μm or less, 550 μm or less, 500 μm or less, 450 μm or less, 400 μm or less, 350 μm or less, 300 μm or less, 250 μm or less, 200 μm or less, 150 μm or less, 125 μm or less, 100 μm or less, 75 μm or less, or 50 μm or less. The thickness of the glass spacer 510 may be 5 μm or more, 10 μm or more, or 15 μm or more.
[0114] Applying cavity dies and glass spacers within this range is advantageous for creating a more efficient cavity configuration.
[0115] Referring to Figure 3, Td is the thickness from the top surface of the cavity die 530 to the bottom surface of the glass spacer 510. If the electrodes of the cavity die protrude from the surface of the cavity die, their thickness is excluded.
[0116] In the embodiment, Td may be 40 μm or more. Td may also be 60 μm or more, 90 μm or more, 120 μm or more, 180 μm or more, 240 μm or more, 280 μm or more, 300 μm or more, 340 μm or more, 360 μm or more, 400 μm or more, or 430 μm or more. Td may also be 500 μm or more, or 460 μm or more. Td may be thinner than the thickness of the glass plate.
[0117] The thickness of the glass plate may be greater than 300 μm, 400 μm or more, 500 μm or more, 600 μm or more, or 700 μm or more. The thickness of the glass plate may be 1,500 μm or less, 1,400 μm or less, 1,300 μm or less, 1,200 μm or less, 1,100 μm or less, or 1,000 μm or less.
[0118] The implemented packaging glass core utilizes a cavity die and a glass spacer, thereby applying the stable properties of the glass substrate to the cavity die while improving the processability of the fragile glass plate. Furthermore, electrical connection to the cavity die can be performed in a relatively simple process, resulting in a packaging glass core with improved workability and reliability.
[0119] Packaging substrate Figure 5 is a conceptual diagram illustrating a cross-sectional view of a packaging substrate in a concrete example. Figures 1 to 4 are conceptual diagrams illustrating cross-sectional views of a packaging glass core, respectively. The packaging glass cores shown in Figures 1 to 4 are applied to the packaging substrate in Figure 5. The packaging substrate will be described in detail with reference to Figures 1 to 5.
[0120] The packaging substrate 100 in this embodiment includes a packaging glass core 90 and an upper redistribution layer 60 disposed on the packaging glass core 90.
[0121] A detailed explanation of the packaging glass core 90 would be redundant with the explanation above, so a detailed description is omitted.
[0122] The upper rewiring layer 60 includes an upper electrically conductive layer 630 and an upper insulating layer 610. The upper electrically conductive layer 630 is a layer on which electrically conductive layers are connected in a pattern. The upper insulating layer 610 has the upper electrically conductive layer 630 arranged inside it.
[0123] The upper redistribution layer 60 is positioned on top of the packaging glass core, and the wiring layer and blind vias are arranged in a predetermined configuration. The wiring layer enables signal transmission in the planar direction, and the blind vias enable signal transmission in the vertical direction (thickness direction).
[0124] The upper redistribution layer 60 can be manufactured by a process for forming a redistribution layer applied in the semiconductor technology field.
[0125] A cover layer (not shown) may be further disposed on top of the upper redistribution layer. The cover layer protects the upper redistribution layer and can form a structure that can be connected to connecting electrodes or bumps, etc. The cover layer may, but is not limited to, a polyimide layer.
[0126] The lower rewiring layer (not shown) includes a lower electrically conductive layer and a lower insulating layer. The lower electrically conductive layer is a layer on which the electrically conductive layers are connected in a pattern. The lower insulating layer has the lower electrically conductive layer arranged inside it.
[0127] The lower redistribution layer is located beneath the packaging glass core, and the wiring layer and blind vias are arranged in a predetermined configuration. The wiring layer enables signal transmission in the planar direction, and the blind vias enable signal transmission in the vertical direction (thickness direction).
[0128] The aforementioned lower redistribution layer can be manufactured by a process for forming redistribution layers applied in the semiconductor technology field.
[0129] A solder resist layer may be further disposed below the lower redistribution layer. The solder resist layer can protect the lower redistribution layer and form a structure that can be connected to connecting electrodes or bumps, etc.
[0130] A semiconductor element may be placed on top of the packaging substrate. The semiconductor element may, but is not limited to, an arithmetic element, a memory element, or the like.
[0131] The lower part of the aforementioned packaging substrate can be connected to a motherboard.
[0132] The packaging substrate in this example incorporates a glass core while simultaneously applying a glass spacer within the die block in the cavity. The glass spacer retains the advantages of the glass core's plate glass, exhibiting excellent properties such as dimensional stability. Furthermore, by adjusting the gap between the cavity die and the cavity space, a packaging substrate with improved performance can be provided.
[0133] Manufacturing method for glass cores for packaging Figures 6A to 6C are conceptual diagrams illustrating the process of manufacturing a die block in a cross-sectional view, and Figures 7A to 7E are conceptual diagrams illustrating the process of manufacturing a packaging glass core in a cross-sectional view, also in a concrete example. While Figures 6A to 6C and 7A to 7E illustrate the process of manufacturing the packaging glass core shown in Figure 4, the packaging glass cores shown in Figures 1 to 3 can also be manufactured in a similar manner.
[0134] With reference to the aforementioned drawings, a method for manufacturing a glass core 90 for packaging according to an embodiment will be described in detail.
[0135] A method for manufacturing a glass core 90 for packaging includes a placement step, a distribution step, and a fixing step.
[0136] The aforementioned arrangement step involves placing the glass plate with the cavity 40 and the die block 50 on the carrier 210 to obtain an assembly.
[0137] The carrier 210 detachably fixes the positions of the glass plate 20 and the die block 50, and a film may be applied to it, for example.
[0138] The carrier 210 may include a support layer and an adhesive layer disposed on the support layer. The adhesive layer may have adhesive strength that changes upon irradiation with ultraviolet light.
[0139] In order to fix the positions of the glass plate and the die block in the assembly, the adhesive layer is maintained in a state where the adhesive force is maintained, and after the distribution step described later, the adhesive force is weakened and it can be easily removed from the assembly.
[0140] For example, the adhesive layer may be one whose adhesive strength weakens upon irradiation with ultraviolet light. The carrier 210 can position and fix the glass plate and die block in the necessary steps, and after performing the necessary processes, irradiate with ultraviolet light in another step to separate the glass plate and die block from the weakened adhesive layer.
[0141] The distribution step involves placing the distribution material 410 between the inner wall of the cavity of the assembly and the die block 50 to provide a fixed body.
[0142] The distribution step may include a first step of placing a film-like distribution material between the assemblies, a second step of embedding the distribution material between the cavity inner wall and the die block 50 through vacuum lamination, and a third step of heat-treating the assemblies at least once to induce hardening of the distribution material and fix the distribution material in place.
[0143] A detailed explanation of the aforementioned distribution materials would be redundant with the explanation given above, so a detailed description will be omitted.
[0144] As mentioned above, empty space can be placed around the through electrode.
[0145] In this case, the distribution material may be a different material from the insulating material applied to the empty space of the through electrode. Alternatively, the same material may be applied. If the same material is applied, the placement of the distribution material in the distribution step and the placement of the insulating material in the empty space of the through electrode may occur simultaneously.
[0146] The fixing step involves removing the carrier 210 from the fixed body to obtain the glass core 90 for packaging.
[0147] Various methods can be applied to remove the carrier 210 from the fixed body. For example, when applying the method described above in which the adhesive strength of the adhesive layer is weakened by irradiation with ultraviolet light, a glass core for packaging can be obtained by a relatively simple method of irradiating the fixed body with ultraviolet light and peeling off the carrier film.
[0148] The die block 50 may be provided by a die block manufacturing step.
[0149] The die block manufacturing step includes a die placement process in which one or more cavity dies 530 are placed at intervals on a spacer glass 515 to provide a placement material, and a die separation process in which the placement material is separated by dicing (indicated as D in Figure 6B) at the intervals to obtain a die block 50.
[0150] Dicing may be performed using methods for cutting ordinary plate glass or semiconductor elements, and may be, but is not limited to, methods such as laser treatment of the area to be cut, followed by the application of physical force to cut, and then polishing the cut surface.
[0151] The die block manufacturing step may further include a polishing step.
[0152] The polishing step may be applied after the die placement step.
[0153] The spacer glass 515 has a first surface on which the cavity die 530 is placed, and a second surface facing the placement surface.
[0154] The polishing step may be a step of grinding the surface of the second surface of the spacer glass 515 (indicated as G in Figure 6B).
[0155] The grinding may be glass grinding or a grinding method used in semiconductor processes, and may, but is not limited to, a Chemical Mechanical Polishing (CMP) process.
[0156] A cavity die with electrodes already formed on it can be applied to the die placement step.
[0157] An additional electrode may be formed on the cavity die. The electrode formation on the cavity die can be carried out using methods for forming electrodes on the packaging substrate. Specifically, this can be done by forming a primer layer or sputtered layer at the electrode formation location, and then forming a copper layer or the like at a selective location on top of it. While a copper layer is mentioned as an example, any electrically conductive layer can be applied here.
[0158] For example, electroplating can be used to form the copper layer.
[0159] The position where the copper layer is formed can be determined by etching a portion of the insulating layer.
[0160] For example, the method for manufacturing the glass core 90 for packaging may further include an electrode formation step.
[0161] The electrode formation step is a step of forming electrodes in vias. Specifically, it is a step of forming through electrodes by placing an electrically conductive layer in a through via.
[0162] The electrode formation step may be performed before the placement step or after the fixing step. The electrode formation may be performed by copper plating, but is not limited thereto.
[0163] One practical application is the use of glass spacers to mitigate thickness differences when embedding dies in the cavities of glass cores, thereby improving workability and reliability. Furthermore, by reducing the height difference between the die embedded in the cavity and the surface of the glass core, redistribution layers can be formed more efficiently. This is also useful for semiconductor packaging, and by applying a glass core, it is possible to provide packaging glass cores that possess excellent non-conductive properties distinct from wafers and fine wiring capabilities distinct from prepregs.
[0164] Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto. Various modifications and improvements by those skilled in the art, utilizing the basic concepts of the present invention as defined in the appended claims, also fall within the scope of the present invention. [Explanation of Symbols]
[0165] 100 Packaging substrates 90 Glass cores for packaging 20 sheet glass 30 through vias 310 Through electrode 312 Through-electrode pad 40 Cavity 410 Dispensing Material 50 Die Blocks 510 Glass Spacer 520 Die Adhesive Layer 530 Cavity Die 540 Cavity die electrodes 542 Electrode pads for cavity dies 60 Upper redistribution layer 610 Upper insulating layer 630 Upper electrically conductive layer 515 Spacer Glass 210 carriers
Claims
1. A packaging glass core comprising a glass plate having a first surface and a second surface facing each other, through vias penetrating the glass plate in the thickness direction, and a cavity penetrating the first surface and the second surface and allowing for the placement of a semiconductor element inside, The aforementioned cavity provides a cavity space enclosed by the inner wall of the cavity, The inner wall of the cavity is the inner wall surface of the glass plate that connects the first surface of the glass plate and the second surface of the glass plate. The die block is placed in the cavity space, The die block consists of a cavity die, which is a die placed inside the cavity, and a glass spacer, which are arranged above and below each other. A glass core for packaging, in which a distribution material is placed between the inner wall of the cavity and the die block.
2. The die block further includes a die adhesive layer, which is an adhesive layer. The glass core for packaging according to claim 1, wherein the die bonding layer is disposed between the cavity die and the glass spacer.
3. The die block has a first surface and a second surface that face each other, The glass core for packaging according to claim 1, wherein the first surface of the glass plate and the first surface of the die block, or the second surface of the glass plate and the second surface of the die block are arranged substantially on the same line.
4. The cavity die has a first surface that contacts the glass spacer and a second surface that faces the first surface. The packaging glass core according to claim 1, wherein the electrodes of the cavity die are arranged on the second surface of the cavity die.
5. Cavity redistribution wiring is further arranged on one or the other surface of the cavity die. The packaging glass core according to claim 1, wherein the cavity redistribution wiring is redistribution wiring that transmits the electrical signals of the cavity die to the outside of the cavity.
6. The glass core for packaging according to claim 1, wherein the die block has a thickness (Td) of 40 μm or more from the top surface of the cavity die to the bottom surface of the glass spacer.
7. A through electrode is placed in the aforementioned through via. The through electrode transmits an electrical signal between the first and second surfaces of the glass plate. The through electrode has a through electrode pad which is a pad that is placed on at least one of the first and second surfaces of the glass plate. The pad positioned at one end of the electrode of the cavity die is the electrode pad of the cavity die, The glass core for packaging according to claim 4, wherein, with reference to the surface of the through-electrode pad, the surface of the electrode pad of the cavity die is arranged in a range of -100 μm to +100 μm in the thickness direction of the glass core.
8. The process involves placing a glass plate with a cavity and a die block on a carrier to obtain an assembly, and A distribution step in which a distribution material is placed between the inner wall of the cavity of the assembly and the die block to provide a fixing body, The process includes a fixing step of removing the carrier from the fixed body to obtain a glass core for packaging, The carrier detachably fixes the positions of the glass plate and the die block, The aforementioned glass plate is a plate-shaped glass having a first surface and a second surface that face each other. The glass plate has the cavity and through vias arranged therein. The aforementioned through via penetrates the glass plate in the thickness direction, The aforementioned cavity provides a cavity space enclosed by the inner wall of the cavity, The cavity inner wall is one surface of the glass plate as seen from the cavity, and is an inner wall surface connecting the first surface of the glass plate and the second surface of the glass plate. The cavity space allows for the placement of the cavity die, The cavity die is a die placed inside the cavity, A method for manufacturing a glass core for packaging, wherein the die block has the cavity die and glass spacer arranged vertically.
9. The carrier includes a support layer and an adhesive layer disposed on the support layer. The method for manufacturing a glass core for packaging according to claim 8, wherein the adhesive layer's adhesive strength changes upon irradiation with ultraviolet light.
10. The die block is provided by the die block manufacturing step, The die block manufacturing step is, A die placement process in which one or more cavity dies are placed at intervals on a spacer glass to provide the material to be placed, A method for manufacturing a glass core for packaging according to claim 8, comprising a die separation step of dicing the positions of the aforementioned intervals to separate the arrangement material and obtain a die block.
11. The polishing step is applied after the die placement step, The spacer glass has a first surface on which the cavity die is placed, and a second surface facing the placement surface. The method for manufacturing a glass core for packaging according to claim 10, wherein the polishing step is a step of grinding the surface of the second surface of the spacer glass.
12. The electrode of the cavity die is an electrode placed on one surface of the cavity die, The glass spacer has a first surface and a second surface that face each other, The second surface of the glass plate and the second surface of the glass spacer are arranged substantially on the same plane. The method for manufacturing a glass core for packaging according to claim 8, wherein the electrodes of the cavity die are arranged substantially coplanar with the first surface of the glass plate, or are arranged to protrude beyond the coplanar plane.
13. The distribution step is, A first step of placing a film-like distribution material between the assemblies, A second step involves embedding a distribution material between the inner wall of the cavity and the die block through depressurization lamination, A method for manufacturing a glass core for packaging according to claim 8, comprising a third step of heat-treating the assembly at least once to induce hardening of the distribution material and fixing the distribution material.
14. In the aforementioned arrangement step, the glass plate has through electrodes placed in a portion of the through vias, and the remaining portion has empty space. A method for manufacturing a glass core for packaging according to claim 13, wherein the arrangement of the distribution material in the distribution step and the arrangement of the insulating material in the empty space of the through electrode are performed simultaneously.