Film deposition apparatus, control method, method for manufacturing electronic devices, and mask

Abstract

Efficiently perform film deposition using different types of deposition materials. [Solution] A film deposition apparatus for depositing multiple element rows on a substrate, comprising: a substrate support means; a mask support means; a deposition means equipped with multiple deposition sources of different deposition materials; a moving means for relatively moving the substrate support means and the deposition means in the column direction of the element row; a first changing means for changing the relative position of the substrate support means and the deposition means in the row direction of the element row; and a second changing means for changing the relative position of the substrate support means and the mask support means. One film deposition operation is performed by releasing the deposition material from the deposition means onto the substrate while relatively moving the substrate support means and the deposition means in the column direction using the moving means. For each film deposition operation, the combination of the deposition source and the film deposition region of the substrate is changed by the first changing means, and the combination of the element row and the opening row of the mask is changed by the second changing means.

Description

Technical Field

[0001] The present invention relates to a technique for forming a film on a substrate, and relates to a film forming apparatus, a control method, a method for manufacturing an electronic device, and a mask.

Background Art

[0002] In the manufacture of an organic EL display or the like, a deposition material is formed into a film on a substrate using a mask. Alignment between the mask and the substrate is performed as a pretreatment for film formation, and the two are overlapped (for example, Patent Document 1). The same pattern as the pattern to be formed on the substrate is formed on the mask, and a desired pattern is formed on the substrate by a single film formation process.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] When using different types of deposition materials, such as when forming sub-pixels of each of RGB colors, the substrate is transported to a film formation chamber for each type of deposition material for film formation processing. A film formation chamber corresponding to the type of deposition material is required, and the transport frequency of the substrate increases. There is room for improvement in terms of manufacturing efficiency.

[0005] The present invention provides a technique for efficiently performing film formation using different types of deposition materials.

Means for Solving the Problems

[0006] According to the present invention, a film forming apparatus for forming a plurality of element columns in which a plurality of elements are arranged in a columnar shape on a film formation region of a substrate, a substrate support means for supporting the substrate, A mask support means for supporting a mask having a mask region corresponding to the film deposition region of the substrate, A deposition means comprising multiple deposition sources with different deposition materials, which release the deposition material onto the substrate via the mask, A moving means for moving the substrate support means and the deposition means relative to each other in the column direction of the plurality of element rows, A first modification means for changing the relative position of the plurality of element rows in the row direction between the substrate support means and the deposition means, The system includes a second changing means for changing the relative position between the substrate support means and the mask support means, By moving the substrate support means and the deposition means relative to each other in the row direction using the moving means, the deposition material is released from the deposition means onto the substrate, thereby performing one film formation operation. The plurality of deposition sources are arranged in the row direction, The mask region has an aperture row used for forming one element row in a single film formation operation. Each of the aforementioned film formation operations, The first modification means changes the combination of the deposition source among the plurality of deposition sources and the film formation region, The second modification means changes the combination of the element row and the opening row among the plurality of element rows. A film deposition apparatus characterized by the above is provided. [Effects of the Invention]

[0007] According to the present invention, it is possible to provide a technology for efficiently forming films using different types of deposition materials. [Brief explanation of the drawing]

[0008] [Figure 1] A schematic diagram of a portion of an electronic device manufacturing line. [Figure 2] A schematic diagram of a film deposition apparatus according to one embodiment of the present invention. [Figure 3] A circuit board and a close-up view of a part thereof. [Figure 4] A mask and a close-up view of a part of it. [Figure 5] Explanatory drawing of the film formation operation. [Figure 6] Flowchart showing an example of the processing of the control device. [Figure 7] Flowchart showing an example of the processing of the control device. [Figure 8] Explanatory drawing of the operation of the film formation apparatus of FIG. 2. [Figure 9] Explanatory drawing of the operation of the film formation apparatus of FIG. 2. [Figure 10] Explanatory drawing of the operation of the film formation apparatus of FIG. 2. [Figure 11] Explanatory drawing of the operation of the film formation apparatus of FIG. 2. [Figure 12] Explanatory drawing of the operation of the film formation apparatus of FIG. 2. [Figure 13] Explanatory drawing of the operation of the film formation apparatus of FIG. 2. [Figure 14] Drawing showing an example of the positions in the X direction of the substrate and the mask. [Figure 15] Drawing showing an example of the film formation operation. [Figure 16] Drawing showing an example of the positions in the X direction of the substrate and the mask. [Figure 17] Drawing showing an example of the film formation operation. [Figure 18] Drawing showing an example of the positions in the X direction of the substrate and the mask. [Figure 19] Drawing showing an example of the film formation operation. [Figure 20] Drawing showing an example of the film formation operation. [Figure 21] Drawing showing an example of the film formation operation. [Figure 22] Drawing showing an example of the film formation operation. [Figure 23] Drawing showing an example of the film formation operation. [Figure 24] (A) is an overall view of the organic EL display device, and (B) is a drawing showing the cross-sectional structure of one pixel.

Embodiments for Carrying Out the Invention

[0009] The embodiments will be described in detail below with reference to the attached drawings. Note that the following embodiments do not limit the invention to the claims. While the embodiments describe multiple features, not all of these features are essential to the invention, and the features may be combined in any way. Furthermore, in the attached drawings, the same or similar configurations are given the same reference numerals, and redundant descriptions are omitted.

[0010] <First Embodiment> <Electronic device manufacturing line> Figure 1 is a schematic diagram showing part of the configuration of an electronic device manufacturing line 100 to which the film deposition apparatus of the present invention can be applied. In each figure, arrows X and Y indicate the horizontal direction which is orthogonal to each other, and arrow Z indicates the vertical direction (direction of gravity). The manufacturing line in Figure 1 is used, for example, to manufacture light-emitting elements of an organic EL display device. The manufacturing line 100 includes a transport chamber 120 which has an octagonal shape in plan view. Substrates 101 are brought into the transport chamber 120 from the transport path 110, and substrates 101 with film deposition are transported from the transport chamber 120 to the transport path 111.

[0011] Multiple film deposition apparatuses 1 are arranged around the transport chamber 120, where film deposition processing is performed on the substrate 101. A transport chamber 130 is located adjacent to each film deposition apparatus 1. A storage chamber 140 for housing the mask 102 is arranged around the transport chamber 130, which has an octagonal shape in plan view.

[0012] A transport unit 121 for transporting substrates 101 is located in the transport chamber 120. The transport unit 121 in this embodiment is a horizontal articulated robot, and it transports the substrates 101 in a horizontal position mounted on its hand. The transport unit 121 performs an input operation to transport the substrates 101 brought in from the transport path 110 to the film deposition apparatus 1, and an output operation to transport the substrates 101 that have been film-deposited in the film deposition apparatus 1 from the film deposition chamber 1 to the transport path 111.

[0013] Each transport chamber 130 is equipped with a transport unit 131 for transporting the mask 102. The transport unit 131 in this embodiment is a horizontally articulated robot, and it transports the mask 102 in a horizontal position mounted on its hand. The transport unit 131 performs the operation of transporting the mask 102 from the storage chamber 140 to the film deposition apparatus 1, and the operation of transporting the mask 102 from the film deposition apparatus 1 to the storage chamber 140.

[0014] <Film forming equipment> Figure 2 is a schematic diagram of a film deposition apparatus 1 according to one embodiment of the present invention. The film deposition apparatus 1 is an apparatus for depositing a vapor deposition material onto a substrate 101, and uses a mask 102 to form a thin film of the vapor deposition material in a predetermined pattern. The material of the substrate 101 on which film deposition is performed in the film deposition apparatus 1 can be appropriately selected from materials such as glass, resin, and metal. In particular, in this embodiment, the substrate 101 is, for example, a glass substrate on which a TFT (Thin Film Transistor) is formed or a semiconductor wafer (silicon wafer) on which a semiconductor element is formed.

[0015] The deposition material can be an organic material or an inorganic material (metal, metal oxide, etc.). The film deposition apparatus 1 can be applied to manufacturing equipment for electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film image sensors), as well as optical components, and is particularly applicable to manufacturing equipment for organic EL panels. In this embodiment, red, green, and blue organic materials are used as the deposition material. In the following description, an example will be given in which the film deposition apparatus 1 deposits a film on the substrate 101 by vacuum deposition, but the present invention is not limited to this, and various film deposition methods such as sputtering and CVD can be applied.

[0016] The film deposition apparatus 1 has a box-shaped vacuum chamber 2. The internal space of the vacuum chamber 2 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 2 is connected to a vacuum pump (not shown).

[0017] A deposition unit 6 is arranged in the internal space of the vacuum chamber 2. The deposition unit 6 comprises multiple deposition sources 60R, 60G, and 60B that discharge deposition materials upward, and a housing 61 that accommodates them. The deposition sources 60R, 60G, and 60B are arranged in the X direction and each discharges a different deposition material. Deposition source 60R discharges a red organic material. Deposition source 60G discharges a green organic material. Deposition source 60B discharges a blue organic material. Openings corresponding to each deposition source 60R, 60G, and 60B are formed in the upper wall of the housing 61.

[0018] A shutter 62 is positioned above the housing 61 to restrict and release the release of the deposited material. The shutter 62 is opened and closed by an opening and closing mechanism (not shown). An anti-adhesion plate 21 is also positioned above the deposition unit 6. The anti-adhesion plate 21 prevents the deposited material from unnecessarily adhering to the following configuration located at the top of the internal space of the vacuum chamber 2. Marks 22 for aligning the substrate 101 are formed on the anti-adhesion plate 21.

[0019] A moving unit 8 and a repositioning unit 9 are provided in the internal space of the vacuum chamber 2. The deposition unit 6 is mounted on the repositioning unit 9, and the repositioning unit 9 is mounted on the moving unit 8.

[0020] The moving unit 8 is a mechanism that moves the substrate support unit 3 and the deposition unit 6 relative to each other in the Y direction. In this embodiment, it is a mechanism that moves the deposition unit 6. However, it may also be a mechanism that moves the substrate support unit 3.

[0021] The moving unit 8 includes a movable table 80, a pair of rails 81, a plurality of sliders 82, and a drive unit 83. The movable table 80 is a plate-shaped member on which the position change unit 9 is mounted. Each rail 81 extends in the Y direction and is spaced apart from each other in the X direction. The sliders 82 are fixed to the movable table 80 and slide along the rails 81 in the Y direction. The movable table 80 is freely movable in the Y direction.

[0022] In this embodiment, the drive unit 83 is a ball screw mechanism. The drive unit 83 is equipped with a motor 84 as a drive source. The motor 84 rotates a ball screw shaft 85 that extends in the Y direction. A connecting part 86 equipped with a ball nut that screws onto the ball screw shaft 85 is fixed to the movable table 80. When the ball screw shaft 85 is rotated, the movable table 80 moves in the Y direction.

[0023] The position change unit 9 is a mechanism that changes the relative position of the substrate support unit 3 and the deposition unit 6 in the X direction, and in this embodiment, it is a mechanism that moves the deposition unit 6. However, it may also be a mechanism that moves the substrate support unit 3.

[0024] The repositioning unit 9 includes a rail 91, a plurality of sliders 92, and a drive unit 93. The rail 91 extends in the X direction. The sliders 92 are fixed to the housing 61 of the deposition unit 6 and slide along the rail 91 in the X direction. The deposition unit 6 is movable in the X direction.

[0025] In this embodiment, the drive unit 93 is a ball screw mechanism. The drive unit 93 is equipped with a motor 94 as a drive source. The motor 94 rotates a ball screw shaft 95 that extends in the X direction. A connecting part 96 equipped with a ball nut that screws onto the ball screw shaft 95 is fixed to the housing 61 of the deposition unit 6. By rotating the ball screw shaft 95, the position of the deposition unit 6 in the X direction can be changed.

[0026] A substrate support unit 3 is provided inside the vacuum chamber 2 to support the substrate 101 in a horizontal position. In this embodiment, the substrate support unit 3 is a plate-shaped electrostatic chuck that attracts and holds the substrate 101 to its lower surface by electrostatic force. A functional unit 4 is provided on the substrate support unit 3. The functional unit 4 includes a cooling plate 4 to which the substrate support unit 3 is fixed. The cooling plate 4 includes, for example, a water cooling mechanism and cools the substrate 101 during film deposition via the substrate support unit 3.

[0027] The functional unit 4 also includes a magnetic plate 41. The substrate support unit 3 and the cooling plate 40 are suspended from the magnetic plate 41 via a support portion 42 so as to be displaceable in the Z direction. The magnetic plate 41 is a plate that attracts the mask 102 by magnetic force. During film formation, the substrate 101 is sandwiched between the magnetic plate 41 and the mask 102 by magnetic force, thereby improving the adhesion between the substrate 101 and the mask 102.

[0028] The film deposition apparatus 1 includes a lifting unit 19 for raising and lowering the substrate 101. The lifting unit 19 is a mechanism for raising and lowering the support shaft 19a in the Z direction, and includes, for example, an electric cylinder or an electric ball screw mechanism. A magnetic plate 41 is fixed to the lower end of the support shaft 19a, and the substrate support unit 3 is raised and lowered via the magnetic plate 41 as the support shaft 19a is raised and lowered.

[0029] The lifting unit 19 is mounted on the position adjustment unit 15 via the frame 18. The position adjustment unit 15 aligns the substrate 101 with respect to the film deposition apparatus 1 (more specifically, aligns the substrate 101 with respect to the deposition unit 6) by displacing the substrate support unit 3 in the XY plane. The position adjustment unit 15 can displace the substrate support unit 6 in the rotational direction (θ direction) around the X, Y, and Z axes.

[0030] The position adjustment unit 15 comprises a fixed plate 16 and a movable plate 17. The fixed plate 16 and the movable plate 17 are rectangular frame-shaped plates, and the fixed plate 16 is fixed on the upper wall portion 20 of the vacuum chamber 2. An actuator is provided between the fixed plate 16 and the movable plate 17 to displace the movable plate 17 relative to the fixed plate 16 in rotational directions around the X, Y, and Z axes.

[0031] A frame-like support structure 18 is mounted on the movable plate 17, and a lifting unit 19 is supported on the support structure 18. When the movable plate 17 is displaced, the support structure 18 and the lifting unit 19 are displaced together. This allows the substrate 101 to be displaced in the rotational directions around the X, Y, and Z axes.

[0032] The film deposition apparatus 1 includes a mask support unit 5 that supports the mask 102 during film deposition. In this embodiment, the mask support unit 5 is also used for the transfer operation of the substrate 101 between the transport unit 121 and the substrate support unit 3.

[0033] The mask support unit 5 comprises a pair of support members 50 spaced apart in the X direction. Each support member 50 is raised and lowered by a corresponding actuator 14. In this embodiment, an actuator 14 is provided for each support member 50, but a pair of support members 50 may be raised and lowered by a single actuator 14. The actuator 14 is, for example, an electric cylinder or an electric ball screw mechanism. Each support member 50 has a claw portion 51 at its lower end. The peripheral edges of the substrate 101 and the mask 102 are placed on the claw portion 51. In the example in Figure 2, the mask 102 is placed on the claw portion 51. The pair of support members 50 are raised and lowered synchronously to raise and lower the substrate 101 and the mask 102. The claw portion 51 may have a mechanism to releasely hold the mask 102.

[0034] The position change unit 10 is a mechanism that changes the relative positions of the substrate support unit 3 and the mask support unit 5 in the X and Y directions, and in this embodiment, it is a mechanism that moves the mask support unit 5. However, instead of the position change unit 10, the substrate support unit 3 may be moved by the position adjustment unit 15.

[0035] In this embodiment, the repositioning unit 10 also functions as an alignment mechanism for the mask 102 relative to the substrate 101. The repositioning unit 10 comprises a fixed plate 11 and a movable plate 12, each provided for each actuator 14. The fixed plate 11 and the movable plate 12 are rectangular frame-shaped plates, and the fixed plate 11 is fixed on the upper wall portion 20 of the vacuum chamber 2. Between the fixed plate 11 and the movable plate 12, actuators are provided that displace the movable plate 12 in the rotational direction around the X, Y, and Z axes relative to the fixed plate 11. Each actuator 14 is fixed to the movable plate 12. When the movable plate 12 is displaced, the actuator 14 and the mask support unit 5 are displaced together. This allows the mask 102 to be displaced in the rotational direction around the X, Y, and Z axes.

[0036] The upper wall portion 20 of the vacuum chamber 2 has openings through which the support shaft 19a and the support member 50 pass. These openings are sealed by a sealing member (such as a bellows) (not shown), maintaining airtightness within the vacuum chamber 2.

[0037] The measurement unit SR measures the positions of the substrate 101 and the mask 102. In this embodiment, the measurement unit SR is an imaging device (camera) that captures images. The measurement unit SR is positioned on the upper wall portion 20 and is capable of capturing images of the inside of the vacuum chamber 2. Alignment marks (not shown) are formed on the substrate 101 and the mask 102, respectively. The measurement unit SR photographs each alignment mark and mark 22 on the substrate 101 and the mask 102. The amount of positional misalignment between the position of each alignment mark and mark 22 is calculated, and the position adjustment unit 15 and the position change unit 10 can align the substrate 101 and the mask 102 with respect to mark 22.

[0038] The control device 30 controls the entire film deposition apparatus 1. The control device 30 comprises a processing unit 31, a storage unit 32, an input / output interface (I / O) 33, and a communication unit 34. The processing unit 31 is a processor, such as a CPU, and controls the film deposition apparatus 1 by executing programs stored in the storage unit 32. The storage unit 32 is a storage device such as ROM, RAM, or HDD, and stores various control information in addition to the programs executed by the processing unit 31. The I / O 33 is an interface for sending and receiving signals between the processing unit 31 and various devices. The communication unit 34 is a communication device that communicates with a higher-level device or other control devices via a communication line.

[0039] <Example of substrate and mask configuration> Figure 3 shows an example of the substrate 101 after film deposition. The substrate 101 is a circular silicon wafer with multiple film deposition regions R. After film deposition, each film deposition region R is cut out from the substrate 101 as a single chip.

[0040] The deposition regions R are arranged in a matrix on the XY plane. In this embodiment, the Y direction is the column direction of the deposition regions R, and the X direction is the row direction of the deposition regions R. Each deposition region R is described in the form R(x, y). For example, deposition region R(1, 5) refers to the deposition region located in the 1st column and 5th row. Similarly, deposition region R(7, 2) refers to the deposition region located in the 7th column and 2nd row. In this embodiment, the substrate 101 is designed with multiple deposition regions R arranged in 7 columns and 6 rows (note that in the illustrated example, there are no deposition regions at the four corners of the matrix).

[0041] Each deposition region R contains multiple elemental pixels (px) deposited by the vapor-deposited material. In this embodiment, the elemental pixels are red, green, or blue subpixels, and are sometimes referred to as subpixel pixels (px). Elemental row EL(R) is a subpixel row in which multiple red subpixel pixels (px) are arranged in a row in the Y direction. Elemental row EL(G) is a subpixel row in which multiple green subpixel pixels (px) are arranged in a row in the Y direction. Elemental row EL(B) is a subpixel row in which multiple blue subpixel pixels (px) are arranged in a row in the Y direction. In each elemental row, the subpixel pixels (px) are arranged in the Y direction at a pitch of distance P1.

[0042] The element sequences EL(R), EL(G), and EL(B) are repeated in this order along the X direction. The pitch between adjacent element sequences EL is P2. Adjacent element sequences EL are offset by P1 / 2 in the Y direction.

[0043] Note that the arrangement patterns of element px are not limited to those shown in the illustration and can be designed as appropriate. For example, in the illustrated example, adjacent element rows EL are shifted by (P1) / 2 in the Y direction, but arrangements without this shift are also possible.

[0044] The mask 102 is made of, for example, a silicon plate (a plate of Si). By using a silicon wafer as the mask 102, finer and more precise openings can be formed by applying semiconductor manufacturing technology. The mask 102 has a plurality of relatively thin mask regions M and a relatively thick and rigid frame portion. By providing a magnetic material in the frame portion, the magnetic force of the magnet plate 41 can bring the mask 102 and the substrate 101 into close contact during film formation. The magnetic material is, for example, a thin film of a magnetic material such as nickel (Ni).

[0045] The mask region M is formed in correspondence with the film deposition region R of the substrate 101. Like the film deposition region R, the mask region M is arranged in a matrix in the XY plane, with the Y direction being the column direction of the mask region M and the X direction being the row direction of the mask region M. Each mask region M is described in the form M(x, y). For example, mask region M(1, 5) refers to the mask region located in the 1st column and 5th row.

[0046] An aperture row OL is formed in the mask region M. The aperture row OL is a row of multiple apertures (through holes) op formed in a row in the Y direction. During film deposition, the deposition material passes through the apertures op and is deposited on the substrate 101. One aperture row OL is used to deposit each subpixel px of one element row EL, and the arrangement of the apertures op defines the deposition pattern on the substrate 101. The Y-direction pitch of the apertures op in the aperture row OL is the same as the Y-direction pitch P1 of the subpixels px. Multiple aperture rows OL are repeatedly arranged in the X direction at a pitch of three times the pitch P2 between element rows EL. Adjacent aperture rows OL are offset in the Y direction by (P1) / 2. The number of apertures op in the aperture row OL is at least two more than the number of subpixels px in the element row EL. The number of aperture rows OL in one mask region M is at least two more than 1 / 3 of the number of element rows EL in the deposition region R.

[0047] There are three types of aperture row OL patterns: patterns PT1 to PT3. When the substrate 101 and the mask 102 are aligned to their initial positions, the aperture row OL of pattern PT1 corresponds to the position of element row EL(R). In other words, it is located at the position where red subpixels px are deposited via the aperture row OL of pattern PT1. The aperture row OL of pattern PT2 corresponds to the position of element row EL(B). In other words, it is located at the position where blue subpixels px are deposited via the aperture row OL of pattern PT2. The aperture row OL of pattern PT3 corresponds to the position of element row EL(G). In other words, it is located at the position where blue subpixels px are deposited via the aperture row OL of pattern PT2.

[0048] Patterns PT1 to PT3 differ depending on the position of the mask region M. The first, fourth, and seventh rows of mask region M have aperture rows OL of pattern PT1. The second and fifth rows of mask region M have aperture rows OL of pattern PT2. The third and sixth rows of mask region M have aperture rows OL of pattern PT3. In this way, adjacent mask regions M in the X direction have aperture rows OL arranged such that the element rows EL to be deposited are different for each other. The relationship between these patterns PT1 to PT3 and the mask region M is designed by the arrangement of the deposition sources 60R, 60G, and 60B in the deposition unit 6 and the deposition pattern of the deposition region R.

[0049] <Film deposition process> Figure 5 shows an example of film deposition operation by the deposition unit 6. The deposition unit 6 is positioned in the X direction by the position change unit 9. With the substrate 101 and the mask 102 stacked on top of each other, the deposition unit 6 is moved in the Y direction by the movement unit 8. In the illustrated example, the deposition unit 6 is shown having moved from the starting position Y0, which is one end in the Y direction, to the ending position Y1, which is the other end. As the deposition unit 6 moves, it releases deposition material, thereby depositing subpixels px on the substrate 101.

[0050] The arrangement of the deposition sources 60R, 60G, and 60B corresponds to the arrangement of the deposition region R in the X direction. In the illustrated example, deposition source 60R corresponds to the 4th column of deposition region R. Deposition source 60G corresponds to the 3rd column of deposition region R. Deposition source 60B corresponds to the 2nd column of deposition region R. Therefore, red subpixels px are deposited in the 4th column of deposition region R. Green subpixels px are deposited in the 3rd column of deposition region R. Blue subpixels px are deposited in the 2nd column of deposition region R.

[0051] In this embodiment, film deposition is performed during the forward journey when the deposition unit 6 moves from the starting position Y0 to the ending position Y1. However, in addition to the forward journey, film deposition may also be performed during the return journey when the deposition unit 6 returns from the ending position Y1 to the starting position Y0.

[0052] <Control Example> This section describes an example of the control of the film deposition apparatus 1 performed by the processing unit 31 of the control device 30. Figures 6 and 7 are flowcharts showing an example of processing performed by the processing unit 31, and Figures 8 to 13 are diagrams illustrating its operation. This example shows the process from loading the substrate 101 to film deposition and unloading it.

[0053] In S1 of Figure 6, control is executed to load the substrate 101 into the film deposition apparatus 1. State ST81 in Figure 8 shows the state in which the substrate 101 has been loaded into the vacuum chamber 2. The substrate 101 is transported below the substrate support unit 3 by the transport robot 121.

[0054] In S2 of Figure 6, control is executed to support the transported substrate 101 on the substrate support unit 3. As shown in state ST82 of Figure 8, the mask support unit 5 transfers the substrate 101 from the transport robot 121 to the substrate support unit 3. By raising the support member 50, the periphery of the substrate 101 is placed on the claw portion 51, the substrate 101 rises from the transport robot 121 and is pressed against the substrate suction surface of the substrate support unit 3. The electrostatic chuck of the substrate support unit 3 is activated to suction and hold the substrate 101.

[0055] In S3 of Figure 6, control is executed to transport and support the mask 102 into the film deposition apparatus 1. State ST91 in Figure 9 shows the state in which the mask 102 has been transported into the vacuum chamber 2. The mask 102 is transported from the storage room 140 into the vacuum chamber 2 by the transport robot 131. The mask 102 is located directly below the substrate 101. Next, the mask 102 is transferred from the transport robot 131 to the mask support unit 5 and positioned at the alignment position. State ST92 in Figure 9 shows this operation. By raising the support member 50, the periphery of the mask 102 is placed on the claw portion 51, and the mask 102 rises from the transport robot 131. The mask 102 is now supported by the support member 50 and rises further to the alignment position. At the alignment position, the substrate 101 and the mask 102 are slightly separated in the Z direction.

[0056] In S4 of Figure 6, an alignment operation is performed to position the substrate 101 and mask 102 in their initial positions. As shown in state ST101 of Figure 10, the measurement unit SR measures the relative positions of the alignment marks on the substrate 101 and the mask 102 with respect to the mark 22. If the measurement result (amount of misalignment) is within the acceptable range, the alignment operation is terminated. If the measurement result is outside the acceptable range, a control amount (displacement amount of the substrate 101 and mask 102) is set based on the measurement result to bring the amount of misalignment within the acceptable range.

[0057] "Positional displacement" is defined by the distance and direction (X, Y, θ) of the positional displacement. Based on the set control amount, the position adjustment unit 15 and position change unit 10 are activated as shown in state ST102 in Figure 10. As a result, the substrate support unit 3 and mask support unit 5 are displaced on the XY plane, and the positions of the substrate 101 and mask 102 relative to the mark 22 are adjusted. After the position adjustment, the measurement unit SR takes measurements again. If the measurement result is outside the acceptable range, the positions of the substrate 101 and mask 102 are adjusted again. Thereafter, measurement and position adjustment are repeated until the measurement result is within the acceptable range.

[0058] In S5 of Figure 6, control is performed to superimpose the substrate 101 onto the mask 102. State ST111 in Figure 11 shows this operation. When the substrate support unit 3 is lowered by the lifting unit 19, the substrate 101 is placed on the mask 102, and the entire surface of the substrate 101 to be processed comes into contact with the mask 102. The magnetic plate 41 comes into contact with the cooling plate 4, and from top to bottom, the magnetic plate 41, cooling plate 4, substrate support unit 3, substrate 101 and mask 102 are in close contact. The magnetic force of the magnetic plate 41 pulls the mask 102 towards it, allowing the mask 102 and substrate 101 to come into close contact.

[0059] In step S6 of Figure 6, the film deposition process is controlled. Details will be described later. During the film deposition process, the substrate 101 is maintained in its initial position. Once the film deposition process is complete, in step S7 of Figure 6, control is performed to remove the mask 102 and substrate 101 from the film deposition apparatus 1. The removal operation of the mask 102 and substrate 101 is generally the reverse of the loading operation. With this, film deposition on one substrate 101 is completed.

[0060] <Film deposition process> The film deposition process in S6 of Figure 6 will be explained with reference to Figures 7 and 11 to 23. In S11 of Figure 7, control is performed regarding the position setting. In this embodiment, the film deposition position of the subpixels px on the substrate 101 and the type of deposition material are controlled by the relative position of the mask 102 on the substrate 101 and the relative position of the deposition unit 6 on the substrate 101. Due to the alignment in S4 of Figure 6, the substrate 101 and the mask 102 are in their initial positions, so in the position setting of S11, control is performed regarding the position of the deposition unit 6. First, the positional relationship between the substrate 101 and the mask 102 in their initial positions will be explained.

[0061] In the initial position, the positional relationship between the deposition position of the subpixel px relative to the deposition region R and the positional relationship of the aperture op in the mask region M is as shown in Figure 14. Figure 14 is a diagram showing the positional relationship between the deposition position px' of the subpixel px relative to the deposition region R and the positional relationship of the aperture op in the mask region M. During deposition, the substrate 101 and the mask 102 are superimposed, but for the sake of explanation, they are shown separated in the Y direction in Figure 14.

[0062] In the example in Figure 14, the deposition position of the subpixel px relative to the deposition region R is indicated by position px'. This position px' is the same as the position of the deposited subpixel px as illustrated in Figure 3. The deposition regions M of the 1st, 4th, and 7th columns overlap with the mask regions M of the 1st, 4th, and 7th columns, which have the aperture column OL of pattern PT1. The aperture column OL is located at the position of element column EL(R), and the deposition position px' of the red subpixel coincides with the aperture op. The deposition regions M of the 2nd and 5th columns overlap with the mask regions M of the 2nd and 5th columns, which have the aperture column OL of pattern PT2. The aperture column OL is located at the position of element column EL(B), and the deposition position px' of the blue subpixel coincides with the aperture op. The deposition regions M of the 3rd and 6th columns overlap with the mask regions M of the 3rd and 6th columns, which have the aperture column OL of pattern PT3. The aperture row OL is located at the position of element row EL(G), and the aperture op overlaps with the deposition position px' of the green subpixel. The above describes the positional relationship between the deposition position px' of the subpixel px and the aperture op in the mask region M at the initial position.

[0063] Next, the states ST111 in Figure 11 and ST151 in Figure 15 show the configuration in which the deposition unit 6 is set to the initial film deposition operation position by the position setting S11 in Figure 7. The deposition unit 6 is moved by the position change unit 9 to a position where the deposition source 60R corresponds to the first row of film deposition area R.

[0064] In S12 of Figure 7, the film deposition operation is controlled. State ST112 in Figure 11 and state ST152 in Figure 15 show the configuration of the initial film deposition operation. As explained in Figure 5, during the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, the deposition material is released from the deposition source 60R. Red subpixels px are deposited on each element row EL(R) of the first deposition region R via the mask 102. More specifically, the deposition material from the deposition source 60R reaches the substrate 101 via the opening op of the first mask region M, and red subpixels px are deposited on each element row EL(R) of the first deposition region R. In state ST152 of Figure 15, the letter "R" shown in the first deposition region R indicates that the deposition of red subpixels px has been completed.

[0065] In S13 of Figure 7, it is determined whether the entire film deposition process is complete. If it is not complete, the process proceeds to S14. In S14 of Figure 7, the position change unit 10 controls the relative position of the substrate 101 and the mask 102. State ST121 in Figure 12 shows the operation at this time.

[0066] First, the lifting unit 19 raises the substrate support unit 3. This separates the substrate 101 from the mask 102, causing the substrate 101 and mask 102 to move apart in the Z direction. Next, the position changing unit 10 changes the position of the mask support unit 5. This changes the combination of element row EL and aperture row OL. In preparation for the second film deposition operation, the mask support unit 5 is moved by a pitch P2 in one direction in the X direction and by (P1) / 2 in one direction in the Y direction. This changes the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M. After the positional relationship is changed, the lifting unit 19 lowers the substrate support unit 3 again, bringing the substrate 101 and mask 102 into close contact.

[0067] Figure 16 shows the changes made in preparation for the second film deposition operation. Similar to the first film deposition operation, the film deposition regions M of the 1st, 4th, and 7th rows overlap with the mask regions M of the 1st, 4th, and 7th rows, which have the aperture row OL of pattern PT1. However, the aperture row OL is located at the position of element row EL(G), and the aperture op overlaps with the deposition position px' of the green subpixel. Similarly, the film deposition regions M of the 2nd and 5th rows overlap with the mask regions M of the 2nd and 5th rows, which have the aperture row OL of pattern PT2, but the aperture row OL has been displaced to the position of element row EL(R), and the aperture op overlaps with the deposition position px' of the red subpixel. The film deposition regions M of the 3rd and 6th rows overlap with the mask regions M of the 3rd and 6th rows, which have the aperture row OL of pattern PT3, but the aperture row OL is located at the position of element row EL(B), and the aperture op overlaps with the deposition position px' of the blue subpixel. In this way, the combination of element sequence EL and aperture sequence OL is changed.

[0068] Furthermore, when changing the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M, the position change unit 10 may be controlled after measuring the relative position between the alignment mark of the mask 102 and the alignment mark of the mark 22 or the substrate 101 using the measurement unit SR.

[0069] In step S15 of Figure 7, the position change unit 9 controls the position of the deposition unit 6. This changes the combination of deposition sources 60R, 60G, and 60B and the deposition area R. ST121 in Figure 12 and ST171 in Figure 17 show the position changes in preparation for the second deposition operation. The position change unit 9 moves the deposition unit 6 so that deposition source 60R is in the second deposition area R and deposition source 60G is in the first deposition area R. After the process in S15 of Figure 7 is completed, the process returns to S12 and the deposition operation is performed.

[0070] State ST122 in Figure 12 and State ST172 in Figure 17 show the configuration of the second film deposition operation. During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60R and 60G. Green subpixels px are deposited on each element row EL(G) of the first deposition region R via the mask 102, and red subpixels px are deposited on each element row EL(R) of the second deposition region R. More specifically, the deposition material from the deposition source 60G reaches the substrate 101 via the opening op of the first mask region M, and green subpixels px are deposited on each element row EL(G) of the first deposition region R. Also, the deposition material from the deposition source 60R reaches the substrate 101 via the opening op of the second mask region M, and red subpixels px are deposited on each element row EL(R) of the first deposition region R. In state ST172 shown in Figure 17, the letter "R" in the second column of the deposition region R indicates that the deposition of red subpixels px has been completed, and the letter "G" in the first column of the deposition region R indicates that the deposition of green subpixels px has been completed.

[0071] The same process is repeated thereafter, and the film deposition process progresses.

[0072] The processes S14 and S15 in Figure 7 during the third film deposition operation will be explained. State ST131 in Figure 13 shows the operation of S14 in Figure 7 during the preparation for the third film deposition operation. Figure 18 shows how the positional relationship between the deposition position px' of the subpixel px and the aperture op of the mask region M is changed during the preparation for the third film deposition operation.

[0073] In preparation for the third film deposition operation, as in the preparation for the second deposition operation, the substrate 101 is raised by the lifting unit 19 to separate the substrate 101 from the mask 102, and then the mask support unit 5 is moved by a pitch P2 in one direction in the X direction and by (P1) / 2 in one direction in the Y direction. The film deposition regions M of the first, fourth, and seventh rows overlap with the mask regions M of the first, fourth, and seventh rows, which have the aperture row OL of pattern PT1. The aperture row OL is located at the position of element row EL(B), and the aperture op coincides with the film deposition position px' of the blue subpixel. Similarly, the film deposition regions M of the second and fifth rows overlap with the mask regions M of the second and fifth rows, which have the aperture row OL of pattern PT2. The aperture row OL has been displaced to the position of element row EL(G), and the aperture op coincides with the film deposition position px' of the green subpixel. The deposition regions M in the 3rd and 6th columns overlap with the mask regions M in the 3rd and 6th columns, which have the aperture row OL of pattern PT3. The aperture row OL is located at the position of element row EL(R), and the deposition position px' of the red subpixels overlaps with the aperture op.

[0074] State ST131 in Figure 13 and State ST191 in Figure 19 show the changes in the position of the deposition unit 6 in preparation for the third film deposition operation. The deposition unit 6 is moved by the position change unit 9 so that the deposition source 60R is in the third film deposition area R, the deposition source 60G is in the second film deposition area R, and the deposition source 60B is in the third film deposition area R. After that, the film deposition operation is performed.

[0075] State ST132 in Figure 13 and State ST172 in Figure 17 show the configuration of the third film deposition operation. During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60R, 60G, and 60B. Blue subpixels px are deposited on each element row EL(B) of the first deposition region R via the mask 102, green subpixels px are deposited on each element row EL(G) of the second deposition region R, and red subpixels px are deposited on each element row EL(R) of the third deposition region R. More specifically, the deposition material from the deposition source 60B reaches the substrate 101 via the opening op of the first mask region M, and blue subpixels px are deposited on each element row EL(B) of the first deposition region R. Furthermore, the deposited material from the deposition source 60G reaches the substrate 101 through the opening op in the second row mask region M, and green subpixels px are deposited on each element row EL(G) in the second row deposition region R. Also, the deposited material from the deposition source 60R reaches the substrate 101 through the opening op in the third row mask region M, and red subpixels px are deposited on each element row EL(R) in the first row deposition region R. In state ST192 in Figure 19, the letter "R" shown in the third row deposition region R indicates that the deposition of red subpixels px is complete, the letter "G" shown in the second row deposition region R indicates that the deposition of green subpixels px is complete, and the letter "B" shown in the first row deposition region R indicates that the deposition of blue subpixels px is complete. The deposition in the first row deposition region R is complete.

[0076] The processes in S14 and S15 of Figure 7 during the fourth film deposition operation will now be explained. In S14 of Figure 7, during the preparation for the fourth film deposition operation, the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M is returned to the positional relationship shown in Figure 14. That is, the substrate 101 is raised by the lifting unit 19 to separate the substrate 101 from the mask 102, and then the mask support unit 5 is moved back in the other direction in the X direction by twice the pitch P2, and also moved back in the other direction in the Y direction by the pitch P1.

[0077] State ST201 in Figure 20 shows the configuration of the vapor deposition unit 6's position change in preparation for the fourth film deposition operation. The vapor deposition unit 6 is moved by the position change unit 9 so that the vapor deposition source 60R is in the fourth film deposition area R, the vapor deposition source 60G is in the third film deposition area R, and the vapor deposition source 60B is in the second film deposition area R. After that, the film deposition operation is performed.

[0078] State ST202 in Figure 20 shows the configuration of the fourth film deposition operation. As the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, the deposition material is released from the deposition sources 60R, 60G, and 60B. Blue subpixels px are deposited on each element row EL(B) of the second deposition region R via the mask 102, green subpixels px are deposited on each element row EL(G) of the third deposition region R, and red subpixels px are deposited on each element row EL(R) of the fourth deposition region R.

[0079] In state ST202 shown in Figure 20, the letter "R" in the fourth deposition region R indicates that the deposition of red subpixels px has been completed, the letter "G" in the third deposition region R indicates that the deposition of green subpixels px has been completed, and the letter "B" in the second deposition region R indicates that the deposition of blue subpixels px has been completed. The deposition of the second deposition region R is complete.

[0080] The fifth film deposition operation will now be explained. In S14 of Figure 7, during the preparation for the fifth film deposition operation, the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M is controlled to the positional relationship shown in Figure 16. That is, the substrate 101 is raised by the lifting unit 19 to separate the substrate 101 from the mask 102, and then the mask support unit 5 is moved by a pitch P2 in one direction in the X direction and by (P1) / 2 in one direction in the Y direction.

[0081] State ST211 in Figure 21 shows the configuration of the vapor deposition unit 6's position change (S15 in Figure 7) in preparation for the fifth film deposition operation, and the configuration of the fifth film deposition operation. The vapor deposition unit 6 is moved by the position change unit 9 so that the vapor deposition source 60R is in the fifth film deposition area R, the vapor deposition source 60G is in the fourth film deposition area R, and the vapor deposition source 60B is in the third film deposition area R. After that, the film deposition operation is performed.

[0082] During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60R, 60G, and 60B. Blue subpixels px are deposited on each element row EL(B) of the third deposition region R via the mask 102, green subpixels px are deposited on each element row EL(G) of the fourth deposition region R, and red subpixels px are deposited on each element row EL(R) of the fifth deposition region R. Deposition is completed in the third deposition region R.

[0083] The sixth film deposition operation will now be explained. In S14 of Figure 7, during the preparation for the sixth film deposition operation, the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M is controlled to the positional relationship shown in Figure 18. That is, the lifting unit 19 raises the substrate 101 to separate it from the mask 102, and then the mask support unit 5 is moved by a pitch P2 in one direction in the X direction and by (P1) / 2 in one direction in the Y direction.

[0084] State ST212 in Figure 21 shows the configuration of the vapor deposition unit 6's position change (S15 in Figure 7) in preparation for the sixth film deposition operation, and the configuration of the sixth film deposition operation. The vapor deposition unit 6 is moved by the position change unit 9 so that the vapor deposition source 60R is in the sixth film deposition area R, the vapor deposition source 60G is in the fifth film deposition area R, and the vapor deposition source 60B is in the fourth film deposition area R. After that, the film deposition operation is performed.

[0085] During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60R, 60G, and 60B. Blue subpixels px are deposited on each element row EL(B) of the fourth deposition region R via the mask 102, green subpixels px are deposited on each element row EL(G) of the fifth deposition region R, and red subpixels px are deposited on each element row EL(R) of the sixth deposition region R. Deposition is completed in the fourth deposition region R.

[0086] The seventh film deposition operation will now be explained. In S14 of Figure 7, during the preparation for the seventh film deposition operation, the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M is returned to the positional relationship shown in Figure 14. That is, the substrate 101 is raised by the lifting unit 19 to separate the substrate 101 from the mask 102, and then the mask support unit 5 is moved back in the other direction in the X direction by twice the pitch P2, and also moved back in the other direction in the Y direction by the pitch P1.

[0087] State ST221 in Figure 22 shows the configuration of the vapor deposition unit 6's position change (S15 in Figure 7) in preparation for the seventh film deposition operation, and the configuration of the seventh film deposition operation. The vapor deposition unit 6 is moved by the position change unit 9 so that the vapor deposition source 60R is in the seventh film deposition region R, the vapor deposition source 60G is in the sixth film deposition region R, and the vapor deposition source 60B is in the fifth film deposition region R. After that, the film deposition operation is performed.

[0088] During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60R, 60G, and 60B. Blue subpixels px are deposited on each element row EL(B) of the 5th deposition region R via the mask 102, green subpixels px are deposited on each element row EL(G) of the 6th deposition region R, and red subpixels px are deposited on each element row EL(R) of the 7th deposition region R. Deposition is completed in the 5th deposition region R.

[0089] The eighth film deposition operation will now be explained. In S14 of Figure 7, during the preparation for the eighth film deposition operation, the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M is controlled to the positional relationship shown in Figure 16. That is, the lifting unit 19 raises the substrate 101 to separate it from the mask 102, and then the mask support unit 5 is moved by a pitch P2 in one direction in the X direction and by (P1) / 2 in one direction in the Y direction.

[0090] State ST222 in Figure 22 shows the configuration of the vapor deposition unit 6's position change (S15 in Figure 7) in preparation for the eighth film deposition operation, and the configuration of the eighth film deposition operation. The vapor deposition unit 6 is moved by the position change unit 9 so that the vapor deposition source 60R is outside the film deposition area, the vapor deposition source 60G is in the seventh film deposition area R, and the vapor deposition source 60B is in the sixth film deposition area R. After that, the film deposition operation is performed.

[0091] During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60G and 60B. Blue subpixels px are deposited on each element row EL(B) of the 6th deposition region R via the mask 102, and green subpixels px are deposited on each element row EL(G) of the 7th deposition region R. Deposition is completed in the 6th deposition region R.

[0092] The ninth film deposition operation (final film deposition operation) will now be explained. In S14 of Figure 7, during the preparation for the ninth film deposition operation, the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M is controlled to the positional relationship shown in Figure 18. That is, the lifting unit 19 raises the substrate 101 to separate it from the mask 102, and then the mask support unit 5 is moved in one direction in the X direction by a pitch P2 and in one direction in the Y direction by (P1) / 2.

[0093] State ST231 in Figure 23 shows the configuration of the vapor deposition unit 6's position change (S15 in Figure 7) in preparation for the ninth film deposition operation, and the configuration of the ninth film deposition operation. The vapor deposition unit 6 is moved by the position change unit 9 so that the vapor deposition sources 60R and 60G are outside the film deposition area, and the vapor deposition source 60B is moved to the corresponding position in the seventh film deposition area R. After that, the film deposition operation is performed.

[0094] During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, the deposition material is released from the deposition source 60B. Blue subpixels px are deposited on each element row EL(B) of the seventh deposition region R via the mask 102. Deposition of all deposition regions R is completed.

[0095] As described above, according to this embodiment, three sub-pixels px of different colors can be deposited in a single film deposition apparatus 1. Therefore, film deposition using different types of deposition materials can be performed efficiently.

[0096] <Second Embodiment> In the first embodiment, the film deposition operation was performed during the forward movement of the deposition unit 6, but separate film deposition operations may be performed on the forward and return movements. That is, the position of the mask 102 and the position of the deposition unit 6 may be changed not only at the initial position Y0 but also at the end position Y1. This can reduce the number of movements of the deposition unit 6 by half.

[0097] In the first embodiment, an example was shown in which the present invention was applied to the deposition of three sub-pixels (px), but other deposition materials may be used as the deposition material for elemental px. There may also be two types of deposition materials.

[0098] In the first embodiment, the position of the mask 102 was changed in both the X and Y directions by the position change unit 10 at S14 in Figure 7. However, if the adjacent element row EL is not shifted in the Y direction, only the position change in the X direction is necessary.

[0099] <Third Embodiment> Next, an example of an electronic device manufacturing method will be described. The configuration and manufacturing method of an organic EL display device will be illustrated as an example of an electronic device.

[0100] First, let me explain the organic EL display device that will be manufactured. Figure 24(A) is an overall view of the organic EL display device 50, and Figure 24(B) is a diagram showing the cross-sectional structure of one pixel.

[0101] As shown in Figure 24(A), the display area 151 of the organic EL display device 150 has multiple pixels 152, each having multiple light-emitting elements, arranged in a matrix. As will be explained in detail later, each light-emitting element has a structure comprising an organic layer sandwiched between a pair of electrodes.

[0102] In this context, a pixel refers to the smallest unit that enables the display of a desired color in the display area 151. In the case of a color organic EL display device, a pixel 152 is composed of a combination of multiple pixels (called sub-pixels to distinguish them from the overall pixel) of a first light-emitting element 152R, a second light-emitting element 152G, and a third light-emitting element 152B, which emit different amounts of light from each other. A pixel 152 is often composed of a combination of three types of sub-pixels: a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. A pixel 152 may contain at least one type of sub-pixel, preferably two or more types, and more preferably three or more types. For example, a combination of four types of sub-pixels, such as a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element, may constitute a pixel 52.

[0103] Figure 24(B) is a schematic partial cross-sectional view of the line A and B in Figure 24(A). Pixel 152 has multiple subpixels on a substrate 153, each composed of an organic EL element comprising a first electrode (anode) 154, a hole transport layer 155, one of the following: a red layer 156R, a green layer 156G, or a blue layer 156B, an electron transport layer 157, and a second electrode (cathode) 158. Of these, the hole transport layer 155, red layer 156R, green layer 156G, blue layer 156B, and electron transport layer 157 are organic layers. The red layer 156R, green layer 156G, and blue layer 156B are formed in patterns corresponding to light-emitting elements (sometimes described as organic EL elements) that emit red, green, and blue light, respectively.

[0104] Furthermore, the first electrode 154 is formed separately for each light-emitting element. The hole transport layer 155, the electron transport layer 157, and the second electrode 158 may be formed in common across multiple light-emitting elements 152R, 152G, and 152B, or they may be formed for each light-emitting element. That is, as shown in Figure 24(B), the hole transport layer 155 may be formed as a common layer across multiple sub-pixel regions, on which the red layer 156R, green layer 156G, and blue layer 156B may be formed separately for each sub-pixel region, and on top of that, the electron transport layer 157 and the second electrode 158 may be formed as a common layer across multiple sub-pixel regions.

[0105] Furthermore, an insulating layer 159 is provided between the first electrodes 154 to prevent short circuits between the adjacent first electrodes 154. In addition, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 160 is provided to protect the organic EL element from moisture and oxygen.

[0106] In Figure 24(B), the hole transport layer 155 and the electron transport layer 157 are shown as a single layer, but depending on the structure of the organic EL display element, they may be formed as multiple layers having hole blocking layers and electron blocking layers. Furthermore, a hole injection layer having an energy band structure that allows for smooth injection of holes from the first electrode 154 to the hole transport layer 155 may be formed between the first electrode 154 and the hole transport layer 155. Similarly, an electron injection layer may be formed between the second electrode 158 and the electron transport layer 157.

[0107] Each of the red layer 156R, green layer 156G, and blue layer 156B may be formed as a single light-emitting layer or by stacking multiple layers. For example, the red layer 156R may consist of two layers, with the upper layer being a red light-emitting layer and the lower layer being a hole transport layer or an electron blocking layer. Alternatively, the lower layer may be a red light-emitting layer and the upper layer being an electron transport layer or a hole blocking layer. By providing layers below or above the light-emitting layer in this way, the light-emitting position in the light-emitting layer can be adjusted, and the optical path length can be adjusted, thereby improving the color purity of the light-emitting element.

[0108] Although the example shown here is for the red layer 156R, a similar structure may be used for the green layer 156G or the blue layer 156B. Furthermore, the number of layers may be two or more. Additionally, layers of different materials, such as the light-emitting layer and the electron-blocking layer, may be stacked, or layers of the same material may be stacked, for example, by stacking two or more light-emitting layers.

[0109] Next, we will specifically describe an example of a method for manufacturing an organic EL display device. Here, we assume a number of deposition chambers, including a deposition chamber where the deposition apparatus 1 is located.

[0110] First, a circuit (not shown) for driving the organic EL display device and a substrate 153 on which the first electrode 154 is formed are prepared. The material of the substrate 153 is not particularly limited and can be made of glass, plastic, metal, etc. In this embodiment, a substrate 153 is used in which a polyimide film is laminated on a glass substrate.

[0111] A resin layer such as acrylic or polyimide is coated onto the substrate 153 on which the first electrode 154 is formed by bar coating or spin coating. The resin layer is then patterned by lithography so that an opening is formed in the area where the first electrode 154 is formed, thereby forming an insulating layer 159. This opening corresponds to the light-emitting region where the light-emitting element actually emits light. In this embodiment, the processing is performed on a large substrate until the insulating layer 159 is formed, and after the insulating layer 159 is formed, a division process is performed to divide the substrate 153.

[0112] A substrate 153 patterned with an insulating layer 159 is brought into the first deposition chamber, and a hole transport layer 155 is deposited as a common layer on the first electrode 154 of the display area. The hole transport layer 155 is deposited using a mask in which an opening is formed for each display area 151 that will ultimately become the panel portion of each organic EL display device.

[0113] Next, the substrate 153, on which the hole transport layer 155 has been formed, is brought into a second deposition chamber equipped with a deposition apparatus 1. The red layer 156R, green layer 156G, and blue layer 156B are deposited on the portion of the substrate 153 above the hole transport layer 155 where the red-emitting elements are placed (the region forming the red subpixels). After the deposition of the red layer 156R, green layer 156G, and blue layer 156B is completed, the electron transport layer 157 is deposited over the entire display area 151 in a third deposition chamber. The electron transport layer 157 is formed as a common layer for the three color layers 156R, 156G, and 156B.

[0114] The substrate with the electron transport layer 57 formed on it is moved to the fourth deposition chamber, where the second electrode 158 is deposited. In this embodiment, each layer is deposited by vacuum deposition in the first to fourth deposition chambers. However, the present invention is not limited to this, and for example, the second electrode 158 may be deposited by sputtering. After that, the substrate with the second electrode 158 formed on it is moved to a sealing device, where a protective layer 60 is deposited by plasma CVD (sealing step), and the organic EL display device 150 is completed. Here, the protective layer 160 is formed by the CVD method, but the invention is not limited to this, and may be formed by the ALD method or the inkjet method.

[0115] <Other Embodiments> The present invention can also be realized by supplying a program that implements one or more of the functions of the above-described embodiments to a system or device via a network or storage medium, and by having one or more processors in the computer of that system or device read and execute the program. It can also be realized by a circuit (e.g., an ASIC) that implements one or more functions.

[0116] The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention. [Explanation of Symbols]

[0117] 1 Film deposition apparatus, 3 Substrate support unit, 5 Mask support unit, 6 Evaporation unit, 8 Moving unit, 9 Position change unit, 10 Position change unit, 101 Substrate, 102 Mask

Claims

1. A film deposition apparatus for depositing multiple element rows, in which multiple elements are arranged in a row, onto a film deposition area of ​​a substrate, A substrate support means for supporting the substrate, A mask support means for supporting a mask having a mask region corresponding to the film deposition region of the substrate, A deposition means comprising multiple deposition sources with different deposition materials, which release the deposition material onto the substrate via the mask, A moving means for moving the substrate support means and the deposition means relative to each other in the column direction of the plurality of element rows, A first modification means for changing the relative position of the plurality of element rows in the row direction between the substrate support means and the deposition means, The system includes a second changing means for changing the relative position between the substrate support means and the mask support means, By moving the substrate support means and the deposition means relative to each other in the row direction using the moving means, the deposition material is released from the deposition means onto the substrate, thereby performing one film formation operation. The plurality of deposition sources are arranged in the row direction, The mask region has an aperture row used for forming one element row in a single film formation operation. Each of the aforementioned film formation operations, The first modification means changes the combination of the deposition source among the plurality of deposition sources and the film formation region, The second modification means changes the combination of the element row and the opening row among the plurality of element rows. A film deposition apparatus characterized by the following features.

2. A film deposition apparatus according to claim 1, The substrate has a plurality of film deposition regions in the row direction, The mask has a plurality of mask regions corresponding to the plurality of film deposition regions in the row direction, The mask regions adjacent in the row direction are arranged such that the rows of openings are different from each other in terms of the rows of elements to be deposited. The aforementioned film formation operation is The film deposition operation includes the release of deposition material from different deposition sources to a plurality of film deposition regions adjacent in the aforementioned row direction, A film deposition apparatus characterized by the following features.

3. A film deposition apparatus according to claim 1, The aforementioned element forms a subpixel, The aforementioned sequence of elements is composed of three types of sequence of elements: a first sequence of elements, a second sequence of elements, and a third sequence of elements. The aforementioned first element sequence is a sequence of subpixel elements of the first color, The aforementioned second sequence of elements is a sequence of subpixels of the second color, The aforementioned third element sequence is the element sequence of the subpixels of the third color. A film deposition apparatus characterized by the following features.

4. A film deposition apparatus according to claim 3, The substrate has a plurality of film deposition regions in the row direction, The mask has a plurality of mask regions corresponding to the plurality of film deposition regions in the row direction, The plurality of mask regions consist of three types of mask regions: a first mask region in which a first row of openings is formed as the row of openings, a second mask region in which a second row of openings is formed as the row of openings, and a third mask region in which a third row of openings is formed as the row of openings. If the first opening row corresponds to the first element row at the position in the row direction, then the second opening row corresponds to one of the second element row and the third element row, and the third opening row corresponds to the other. A film deposition apparatus characterized by the following features.

5. A film deposition apparatus according to claim 4, The plurality of deposition sources consist of a first deposition source that releases a deposition material that forms the subpixels of the first color, a second deposition source that releases a deposition material that forms the subpixels of the second color, and a third deposition source that releases a deposition material that forms the subpixels of the third color. The first modification means changes the relative position of the substrate support means and the deposition means in the row direction by moving the deposition means in one direction in the row direction. With respect to one of the film deposition regions, the deposition process is carried out three times, resulting in the release of deposition material from the first deposition source, the release of deposition material from the second deposition source, and the release of deposition material from the second deposition source. A film deposition apparatus characterized by the following features.

6. A film deposition apparatus according to claim 5, The first element row and the second element row, and the second element row and the third element row are spaced apart by a first pitch in the row direction. The second modification means is, After the first and second film deposition operations of the three film deposition operations, a first combination change operation is performed in which the mask support means is moved by the first pitch in one direction in the row direction relative to the substrate support means. A film deposition apparatus characterized by the following features.

7. A film deposition apparatus according to claim 6, The second modification means is, After the third of the three film deposition operations, a second combination change operation is performed, in which the mask support means is moved relative to the substrate support means by a distance of twice the first pitch in the other direction of the row. A film deposition apparatus characterized by the following features.

8. A film deposition apparatus according to claim 6, The first element row, the second element row, and the third element row, respectively, have the plurality of elements arranged at a second pitch in the row direction. The second element row is offset from the first element row by a distance of half the second pitch in one direction of the row, The third element row is offset from the second element row by a distance of half the second pitch in the other direction of the row, The first combination changing operation includes moving the mask support means relative to the substrate support means by a distance of half the second pitch in one direction in the column direction. A film deposition apparatus characterized by the following features.

9. A method for controlling a film deposition apparatus that deposits multiple element rows, in which multiple elements are arranged in a row, onto a film deposition area of ​​a substrate, The aforementioned film deposition apparatus is A substrate support means for supporting the substrate, A mask support means for supporting a mask having a mask region corresponding to the film deposition region of the substrate, A deposition means comprising multiple deposition sources with different deposition materials, which release the deposition material onto the substrate via the mask, A moving means for moving the substrate support means and the deposition means relative to each other in the column direction of the plurality of element rows, A first modification means for changing the relative position of the plurality of element rows in the row direction between the substrate support means and the deposition means, The system includes a second changing means for changing the relative position between the substrate support means and the mask support means, The plurality of deposition sources are arranged in the row direction, The mask region has an aperture row used for forming one element row in a single film formation operation. The control method described above is The aforementioned film formation operation includes a film formation step in which the substrate support means and the deposition means are moved relative to each other in the column direction by the moving means, while the deposition material is released from the deposition means onto the substrate, Each of the aforementioned film formation operations, the first modification means changes the combination of the deposition source among the plurality of deposition sources and the film formation region, and the second modification means changes the combination of the element row among the plurality of element rows and the aperture row, including a modification step. A control method characterized by the following:

10. The process includes forming a film on a substrate using the film-forming apparatus described in claim 1, A method for manufacturing an electronic device characterized by the following:

11. A mask used for depositing multiple subpixel rows, each having multiple subpixels arranged in a row, onto a deposition region of a substrate, The substrate has a plurality of film deposition regions in the row direction of the plurality of element rows, The mask has a plurality of mask regions corresponding to the plurality of film deposition regions in the row direction, The aforementioned plurality of sub-pixel sequences are composed of three types of pixel sequences: a first pixel sequence containing sub-pixels of a first color, a second pixel sequence containing sub-pixels of a second color, and a third pixel sequence containing sub-pixels of a third color. The plurality of mask regions consist of three types of mask regions: a first mask region in which a first row of apertures is formed, a second mask region in which a second row of apertures is formed, and a third mask region in which a third row of apertures is formed. When the first aperture row corresponds to the first sub-pixel row at the position in the row direction, the first aperture row, the second aperture row, and the third aperture row are formed such that the second aperture row corresponds to one of the second sub-pixel row and the third sub-pixel row, and the third aperture row corresponds to the other of the second sub-pixel row. A mask characterized by the following features.

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