Elastic wave devices
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SANAN JAPAN TECH CORP
- Filing Date
- 2025-10-07
- Publication Date
- 2026-06-09
AI Technical Summary
【0018】 本発明の弾性波デバイスによれば、弾性波デバイスの通過帯域の低周波側端部の急峻化を実現することができる。
Smart Images

Figure 2026094023000001_ABST
Abstract
Claims
1. A passband elastic wave device, Multiple series resonant circuits connected in series, A plurality of parallel resonant circuits are connected between the series resonant circuit and ground, Equipped with, The plurality of series resonant circuits and the parallel resonant circuits include a piezoelectric substrate and a resonator having an IDT electrode formed on the piezoelectric substrate. At least one of the plurality of series resonant circuits has a capacitive element connected in parallel with the resonator of the series resonant circuit, and is a low-frequency side resonant circuit whose resonant frequency is lower than the passband frequency and whose anti-resonant frequency is lower than the passband frequency. Elastic wave device.
2. The anti-resonant frequency of the low-frequency side resonant circuit is higher than the resonant frequencies of all of the parallel resonant circuits combined. The elastic wave device according to claim 1.
3. The resonant frequency of the low-frequency side resonant circuit is higher than the resonant frequencies of all the parallel resonant circuits combined. The elastic wave device according to claim 2.
4. The capacitance of the capacitive element in the low-frequency resonant circuit is greater than the capacitance of the resonator in the low-frequency resonant circuit. The elastic wave device according to claim 1.
5. The low-frequency side resonant circuit comprises a divided resonator formed by connecting multiple resonators in series, and a capacitive element connected in parallel to the multiple divided resonators connected in series. The elastic wave device according to claim 1.