Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and program

Abstract

This technology provides the capability to uniformly process the entire substrate. [Solution] (a0) A step of supplying a processing gas into a processing chamber in which a substrate having a recess on its surface is disposed; (a1) A step of increasing the pressure inside the processing chamber at least partially simultaneously with (a0); (a2) A step of decreasing the pressure inside the processing chamber; (b) A step of supplying a dilution gas into the processing chamber or increasing the flow rate of the dilution gas supplied into the processing chamber, wherein the supply step is performed such that the pressure inside the processing chamber takes one or more maximum values; and an exhaust step of exhausting the processing chamber at least partially between the supply steps. The supply process includes starting (b) before the end of the first (a2).

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method, a method for manufacturing a semiconductor device, a substrate processing apparatus, and a program.

Background Art

[0002] As one step of a semiconductor device manufacturing process or a substrate processing process, when supplying a processing gas into a processing chamber in which a substrate is disposed, the pressure in the processing chamber may be increased and then decreased (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of uniformly processing an entire substrate.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, (a0) A step of supplying a processing gas into a processing chamber in which a substrate having recesses on its surface is disposed, (a1) A step of increasing the pressure in the processing chamber at least partially simultaneously with (a0), (a2) A step of decreasing the pressure in the processing chamber, (b) A step of supplying a dilution gas into the processing chamber or increasing the flow rate of the dilution gas supplied into the processing chamber, including a supply step performed such that the pressure in the processing chamber takes one or more maximum values, and an exhaust step of exhausting the inside of the processing chamber at least partially during the supply step, and The aforementioned supply process provides a technique for initiating (b) before the completion of the first (a2). [Effects of the Invention]

[0006] According to this disclosure, it becomes possible to process the entire substrate uniformly. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic diagram of a vertical processing furnace of a processing apparatus preferably used in one embodiment of the present disclosure, and shows the processing furnace 202 portion in a vertical cross-sectional view. [Figure 2] Figure 2 is a schematic configuration diagram of a controller 121 of a processing device preferably used in one embodiment of the present disclosure, and is a block diagram showing the control system of the controller 121. [Figure 3] This figure shows an example of a gas supply sequence for a film deposition process in one aspect of the present disclosure. [Figure 4] This figure shows the pressure changes, etc., inside the processing chamber 201 of the supply process in one aspect of this disclosure. [Figure 5] This figure shows the changes in pressure, etc., inside the processing chamber 201 of the supply process in a modified example of the present disclosure. [Modes for carrying out the invention]

[0008] <One aspect of this disclosure> The following description will explain one aspect of this disclosure, primarily with reference to Figures 1 to 5. It should be noted that the drawings used in the following description are schematic, and the dimensional relationships and proportions of the elements shown in the drawings do not necessarily correspond to reality. Furthermore, the dimensional relationships and proportions of the elements do not necessarily correspond between multiple drawings.

[0009] (1) Configuration of the processing unit As shown in Figure 1, the processing furnace 202 of the apparatus has a heater 207 as a temperature regulator (heating unit). The heater 207 is cylindrical and is mounted vertically by being supported by a holding plate. The heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the gas with heat.

[0010] A reaction tube 203 is arranged concentrically with the heater 207 inside the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed in a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The upper end of the manifold 209 is engaged with the lower end of the reaction tube 203 and is configured to support the reaction tube 203. An O-ring 220a is provided between the manifold 209 and the reaction tube 203 as a sealing member. The processing vessel (reaction vessel) is mainly composed of the reaction tube 203 and the manifold 209. In the hollow cylindrical portion of the processing vessel, a region where the wafer 200 as a substrate is placed, i.e., a processing chamber 201, is formed. The processing chamber 201 is configured to accommodate wafers 200 as substrates, arranged so that multiple wafers 200 are stacked perpendicular to the surface of each wafer 200. Processing of the wafers 200 is performed within this processing chamber 201.

[0011] Within the processing chamber 201, nozzles 249a and 249b, serving as first and second supply units, are provided so as to penetrate the side walls of the manifold 209. Nozzles 249a and 249b are also referred to as the first and second nozzles, respectively. Nozzles 249a and 249b are made of a heat-resistant material such as quartz or SiC. Nozzles 249a and 249b are provided adjacent to each other.

[0012] Nozzles 249a and 249b are connected to gas supply pipes 232a and 232b, respectively, which serve as gas supply channels. Gas supply pipe 232a is provided with, in order from the upstream side of the gas flow, a gas supply source (not shown), a mass flow controller (MFC) 241a which is a flow control unit (flow control unit), a valve 243a which is an on / off valve, a first storage section 260a configured to temporarily store gas, and a valve 247a which is a first valve. Downstream of valve 247a on gas supply pipe 232a, gas supply pipe 232c is connected. Gas supply pipe 232c, which serves as a gas supply channel, is provided with, in order from the upstream side of the gas flow, a gas supply source (not shown), an MFC 241c, and a valve 243c.

[0013] The conductance between the first storage section 260a and the processing chamber 201 is, for example, 1.5 × 10⁻⁶. -3 m 3 It is preferable to configure it so that the ratio is 1 / s or more. Also, considering the ratio of the volume of the processing chamber 201 to the volume of the first storage section 260a, when the volume of the processing chamber 201 is 100 L (liters), it is preferable that the volume of the first storage section 260a be, for example, 100 to 300 cc, which is, for example, 1 / 1000 to 3 / 1000 times the volume of the processing chamber 201. The same applies to the second storage section 260d, which will be described later. Note that in this specification, numerical range notations such as "100 to 300 cc" mean that the lower limit and upper limit are included in that range. Therefore, for example, "100 to 300 cc" means "100 cc or more and 300 cc or less". The same applies to other numerical ranges.

[0014] The gas supply pipe 232b is provided with a gas supply source (not shown), an MFC 241b, and a valve 243b in order from the upstream side of the gas flow. Gas supply pipes 232d and 232e as gas supply channels are respectively connected to the downstream side of the valve 243b of the gas supply pipe 232b. The gas supply pipe 232d is provided with a gas supply source (not shown), an MFC 241d, a valve 243d, a second storage part 260d configured to be able to temporarily store gas, and a valve 247d as a second valve in order from the upstream side of the gas flow. The gas supply pipe 232e is provided with a gas supply source (not shown), an MFC 241e, and a valve 243e in order from the upstream side of the gas flow.

[0015] The nozzles 249a and 249b are respectively provided in the space between the inner wall of the reaction tube 203 and the wafer 200 so as to rise upward in the arrangement direction of the wafer 200 along the upper part from the lower part of the inner wall of the reaction tube 203. Gas supply holes 250a and 250b for supplying (discharging) gas are respectively provided on the side surfaces of the nozzles 249a and 249b. The gas supply holes 250a and 250b are respectively open so as to face (oppose) an exhaust port (not shown) described later in a plan view, and it is possible to supply gas. A plurality of gas supply holes 250a and 250b are provided from the lower part to the upper part of the reaction tube 203.

[0016] From the gas supply pipe 232a, a raw material gas as a processing gas is supplied into the processing chamber 201 through the MFC 241a, the valve 243a, the first storage part 260a, the valve 247a, and the nozzle 249a.

[0017] From the gas supply pipe 232b, a reaction gas as a processing gas is supplied into the processing chamber 201 through the MFC 241b, the valve 243b, and the nozzle 249b.

[0018] Inert gas is supplied from gas supply pipes 232c and 232e into the processing chamber 201 via MFCs 241c and 241e, valves 243c and 243e, gas supply pipes 232a and 232b, and nozzles 249a and 249b, respectively. The inert gas acts as a purge gas, carrier gas, etc.

[0019] Dilution gas is supplied from the gas supply pipe 232d into the processing chamber 201 via the MFC 241d, valve 243d, second storage section 260d, valve 247d, and nozzle 249b. The dilution gas acts as a gas that reduces the mole fraction of the processing gas (raw material gas) etc. in the processing chamber 201.

[0020] The raw material gas supply system mainly consists of gas supply pipe 232a, MFC 241a, valve 243a, and first storage section 260a. The reaction gas supply system mainly consists of gas supply pipe 232b, MFC 241b, and valve 243b. The inert gas supply system mainly consists of gas supply pipes 232c, 232e, MFC 241c, 241e, and valves 243c, 243e. The dilution gas supply system mainly consists of gas supply pipe 232d, MFC 241d, valve 243d, second storage section 260d, and valve 247d. The raw material gas supply system, reaction gas supply system, and dilution gas supply system are collectively referred to simply as the supply system. The gas supply source may also be included in the supply system.

[0021] Of the various supply systems described above, any or all of them may be configured as an integrated supply system 248, which is comprised of valves 243a-243e, 247a, 247d, MFCs 241a-241e, a first storage unit 260a, a second storage unit 260d, etc. The integrated supply system 248 is connected to each of the gas supply pipes 232a-232e, and the supply operation of various substances (various gases) into the gas supply pipes 232a-232e, the first storage unit 260a, and the second storage unit 260d, i.e., the opening and closing operations of valves 243a-243e, 247a, 247d and the flow rate adjustment operations of MFCs 241a-241e, etc., are controlled by a controller 121, which will be described later.

[0022] An exhaust port 231a for exhausting the atmosphere inside the processing chamber 201 is provided at the lower part of the side wall of the reaction tube 203. In a plan view, the exhaust port 231a is located opposite the nozzles 249a and 249b (gas supply holes 250a and 250b) with the wafer 200 in between. An exhaust pipe 231 is connected to the exhaust port 231a. A vacuum pump 246, which is a vacuum evacuation device, is connected to the exhaust pipe 231 via a pressure sensor 245, which is a pressure detector (pressure detection unit) for detecting the pressure inside the processing chamber 201, and an APC (Auto Pressure Controller) valve 244, which is a pressure regulator (pressure adjustment unit). The APC valve 244 can be opened and closed while the vacuum pump 246 is operating to evacuate the processing chamber 201 and stop the vacuum evacuation. Furthermore, while the vacuum pump 246 is operating, the pressure inside the processing chamber 201 can be adjusted by adjusting the valve opening based on the pressure information detected by the pressure sensor 245. The exhaust system mainly consists of an exhaust pipe 231, an APC valve 244, and a pressure sensor 245. A vacuum pump 246 may also be included in the exhaust system.

[0023] Below the manifold 209, a seal cap 219 is provided as a furnace opening cover capable of airtightly closing the lower end opening of the manifold 209. An O-ring 220b is provided on the upper surface of the seal cap 219 as a sealing member that contacts the lower end of the manifold 209. Below the seal cap 219, a rotating mechanism 267 for rotating the boat 217, which will be described later, is installed. The rotation shaft 255 of the rotating mechanism 267 passes through the seal cap 219 and is connected to the boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 around the center of the surface of the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be raised and lowered vertically by a boat elevator 115, which is a lifting mechanism installed outside the reaction tube 203. The boat elevator 115 is configured as a transport device (transport mechanism) that moves the seal cap 219 in and out (transports) the wafer 200 into and out of the processing chamber 201 by raising and lowering the seal cap 219.

[0024] Below the manifold 209, a shutter 219s is provided as a furnace opening cover that can airtightly close the lower end opening of the manifold 209 when the seal cap 219 is lowered and the boat 217 is removed from the processing chamber 201. An O-ring 220c is provided on the upper surface of the shutter 219s as a sealing member that contacts the lower end of the manifold 209. The opening and closing operation of the shutter 219s is controlled by a shutter opening and closing mechanism 115s.

[0025] The boat 217, which serves as a substrate support, is configured to support multiple wafers 200, for example 25 to 200 wafers 200, in a horizontal position and aligned vertically with their centers aligned, in multiple layers, that is, arranged with spacing between them. The boat 217 is made of a heat-resistant material such as quartz or SiC. Below the boat 217, multiple layers of heat-insulating plates 218, also made of a heat-resistant material such as quartz or SiC, are supported.

[0026] A temperature sensor 263 is installed inside the reaction tube 203 as a temperature detector. By adjusting the amount of power supplied to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature inside the processing chamber 201 is adjusted to the desired temperature distribution. The temperature sensor 263 is installed along the inner wall of the reaction tube 203.

[0027] As shown in Figure 2, the controller 121, which is the control unit (control means), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, configured as, for example, a touch panel, is connected to the controller 121. An external storage device 123 can also be connected to the controller 121. The processing unit may be configured to have one control unit or multiple control units. That is, the control for performing the processing sequence described later may be performed using one control unit or using multiple control units. Furthermore, the multiple control units may be configured as a control system connected to each other by a wired or wireless communication network, and the control for performing the processing sequence described later may be performed by the entire control system. In this specification, the term "control unit" may refer to a single control unit, a plurality of control units, or a control system composed of a plurality of control units.

[0028] The storage device 121c is composed of, for example, flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. The storage device 121c contains, in a readable format, control programs that control the operation of the processing device, and process recipes that describe the procedures and conditions for substrate processing, as described later. The process recipe functions as a program, combining the procedures in the substrate processing (film deposition, etc.) described later, so that the controller 121 causes the processing device to execute them and obtain a predetermined result. Hereinafter, process recipes and control programs will be collectively referred to simply as "programs" (program products). Similarly, process recipes will be simply referred to as "recipes." In this specification, the term "program" may include only recipes, only control programs, or both. The RAM 121b is configured as a memory area (work area) where programs and data read by the CPU 121a are temporarily held.

[0029] I / O port 121d is connected to the MFCs 241a to 241e, valves 243a to 243e, 247a, 247d, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotary mechanism 267, boat elevator 115, shutter opening / closing mechanism 115s, etc.

[0030] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c in response to input of operation commands from the input / output device 122. The CPU 121a is configured to control the flow rate adjustment operation of various substances (various gases) by the MFCs 241a to 241e, the opening and closing operation of valves 243a to 243e, 247a, and 247d, the opening and closing operation of the APC valve 244 and the pressure adjustment operation of the APC valve 244 based on the pressure sensor 245, the starting and stopping of the vacuum pump 246, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the rotation and rotation speed adjustment operation of the boat 217 by the rotating mechanism 267, the raising and lowering operation of the boat 217 by the boat elevator 115, and the opening and closing operation of the shutter 219s by the shutter opening and closing mechanism 115s, in accordance with the contents of the read recipe.

[0031] The controller 121 can be configured by installing the above-mentioned program, which is recorded and stored in the external storage device 123, onto a computer. The external storage device 123 includes, for example, magnetic disks such as HDDs, optical disks such as CDs, and semiconductor memory such as USB memory and SSDs. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this specification, the term recording media may include only the storage device 121c, only the external storage device 123, or both. Note that the program may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 123.

[0032] (2) Processing steps Using the above-described processing apparatus, an example of a method for processing a substrate as one step in the manufacturing process (manufacturing method) of a semiconductor device, that is, a film deposition sequence for forming a film on a wafer 200 as a substrate, will be explained mainly with reference to Figures 3 and 4. In this embodiment, an example will be described in which a silicon substrate (silicon wafer) having recesses such as trenches and holes on its surface is used as the wafer 200. In the following description, the operation of each part constituting the processing apparatus is controlled by the controller 121.

[0033] In the processing sequence of this embodiment, (a0) Step A0 involves supplying a raw material gas as a processing gas into a processing chamber 201 in which a wafer 200 having a recess on its surface is placed, (a1) Step A1, which increases the pressure in the processing chamber 201, at least partially simultaneously with step A0, (a2) Step A2, which reduces the pressure inside the processing chamber 201, (b) Step B, which involves supplying a dilution gas into the processing chamber 201 or increasing the flow rate of the dilution gas supplied into the processing chamber 201, A supply process (supply step) is carried out such that the pressure inside the processing chamber 201 takes on one or more maximum values, At least part of the supply step includes an exhaust step (exhaust step) for exhausting the inside of the processing chamber 201, It has, In the supply step, step B is started before the completion of the first step A2.

[0034] In the following, the supply step including steps A0, A1, A2, and B will also be referred to as the first processing step.

[0035] In the following example, as shown in Figure 4, The supply step (first processing step) describes the case where step B is started after the pressure in the processing chamber 201 has reached its first maximum value.

[0036] In the following example, When performing a film deposition process (film deposition step) in which a film containing a predetermined element is formed on a wafer 200, specifically, This section describes a case in which a film deposition step is performed on a wafer 200 for a predetermined number of cycles (n times, where n is an integer of 1 or more) in which the first processing step and the second processing step of supplying a reaction gas as a processing gas are performed non-simultaneously.

[0037] In this specification, the term "wafer" may refer to the wafer itself or to a laminate of a wafer and a predetermined layer or film formed on its surface. In this specification, the term "surface of the wafer" may refer to the surface of the wafer itself or to the surface of a predetermined layer formed on the wafer. In this specification, when it is stated that "a predetermined layer is formed on the surface of the wafer," it may mean that the predetermined layer is formed directly on the surface of the wafer itself or that the predetermined layer is formed on a layer or other layer already formed on the wafer. In this specification, the term "substrate" has the same meaning as when it is used with the term "wafer."

[0038] As used herein, the term "substance" includes at least one of gaseous substances and liquid substances. Liquid substances include mist substances.

[0039] As used herein, the term "layer" includes at least one of continuous layers and discontinuous layers. For example, the first and second layers described later may include continuous layers, discontinuous layers, or both.

[0040] In this specification, when describing the adsorption or reaction of raw material gases and reaction gases to the wafer 200 surface, it may include not only the mode in which they adsorb or react to the wafer surface while remaining undecomposed, but also the mode in which they decompose or intermediates generated by the detachment of their ligands adsorb or react to the wafer 200 surface.

[0041] (Wafer charge and boat load) Once multiple wafers 200 are loaded into the boat 217, the lower end opening of the manifold 209 is opened. Then, as shown in Figure 1, the boat 217 supporting the multiple wafers 200 is lifted by the boat elevator 115 and transported into the processing chamber 201. In this way, the wafers 200 are prepared in the processing chamber 201.

[0042] (Pressure adjustment and temperature adjustment) After the boat loading is complete, the processing chamber 201 is evacuated (reduced pressure exhausted) by the vacuum pump 246 to achieve the desired pressure (vacuum level). At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on this measured pressure information. The wafer 200 inside the processing chamber 201 is also heated by the heater 207 to reach the desired processing temperature. At this time, the amount of power supplied to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 to ensure a desired temperature distribution inside the processing chamber 201. The rotation of the wafer 200 by the rotation mechanism 267 is also started. The exhaust of the processing chamber 201, the heating of the wafer 200, and the rotation are all continued at least until the processing of the wafer 200 is completed.

[0043] (Filling of raw material gas and diluent gas) Subsequently, with valve 247a closed, valve 243a is opened to allow the raw material gas to flow into the gas supply pipe 232a. The flow rate of the raw material gas is regulated by MFC 241a and supplied to the first storage section 260a. As a result, the first storage section 260a is filled with the raw material gas at its filling pressure. Once the first storage section 260a is filled with a predetermined amount of raw material gas, valve 243a is closed to maintain the state in which the first storage section 260a is filled with raw material gas. Also, with valve 247d closed, valve 243d is opened to allow the dilution gas to flow into the gas supply pipe 232b. The flow rate of the dilution gas is regulated by MFC 241d and supplied to the second storage section 260d. As a result, the second storage section 260d is filled with the dilution gas at its filling pressure. Once a predetermined amount of dilution gas has been filled into the second storage section 260d, the valve 243d is closed to maintain the state in which the second storage section 260d is filled with dilution gas. However, if the filling of the second storage section 260d with dilution gas is completed when the dilution gas is supplied, the filling of the dilution gas may be performed after the start of the first processing step.

[0044] (Film deposition process) Subsequently, the first processing step and the second processing step are performed in sequence.

[0045] [First Processing Step] First, a raw material gas is supplied to the wafer 200 in the processing chamber 201.

[0046] Specifically, valve 247a is opened, and the high-pressure raw material gas filled in the first storage section 260a is flowed into the depressurized processing chamber 201. In this disclosure, this method of supplying gas to the wafer 200 using a pressure difference is also referred to as flash supply. At this time, valves 243c and 243e may be opened to supply inert gas into the processing chamber 201 via nozzles 249a and 249b. At this time, the valve opening of APC valve 244 may be set to a predetermined state as needed.

[0047] The following describes the pressure changes within the processing chamber 201 caused by supplying the raw material gas to the processing chamber 201, using Figure 4 as an example. In Figure 4, the vertical axis represents the pressure within the processing chamber 201, and the horizontal axis represents time. The solid line in Figure 4 shows the pressure changes within the processing chamber 201 during the first processing step. The dashed line in Figure 4 shows the pressure changes within the processing chamber 201 from time T4 onward when the dilution gas is not supplied to the processing chamber 201 within a predetermined time after the start of the flash supply of the raw material gas.

[0048] By opening valve 247a, the flash supply of the raw material gas begins, and the pressure in the processing chamber 201 rises rapidly between time T1 and time T3, reaching a maximum value V3 at time T3. After reaching the maximum value V3, the pressure in the processing chamber 201 decreases between time T3 and time T8. As shown in Figure 4, the pressure in the processing chamber 201 reaches a maximum value at time T3.

[0049] The period from time T1 to time T3 is a pressure rise period during which the pressure inside the processing chamber 201 (in this case, the partial pressure of the raw material gas) increases. When the partial pressure of the raw material gas increases, the raw material gas can reach not only the opening side of the recess (hereinafter simply referred to as the opening side) but also the deeper side of the recess (hereinafter simply referred to as the deep side). This improves step coverage. For example, if the pressure V2 at time T2 is half the maximum pressure V3, the partial pressure of the raw material gas can be made particularly high during the period from time T2 to time T3 within the above pressure rise period, thereby further improving step coverage.

[0050] On the other hand, the period from time T3 to time T8 is a pressure-decrease period in which the pressure inside the processing chamber 201 (in this case, the partial pressure of the raw material gas) decreases. When the partial pressure of the raw material gas decreases, it may become difficult to deliver the raw material gas to the deeper parts of the chamber. For example, if the pressure V2 at time T7 is set to half of the maximum pressure V3, then during the pressure-decrease period, from time T3 to time T7, the partial pressure of the raw material gas is high, so high step coverage can be maintained. In contrast, from time T7 to time T8, the partial pressure of the raw material gas is relatively low, so there is a risk that step coverage will decrease. Furthermore, once a predetermined time has elapsed since the start of flash supply of the raw material gas (time T1) (for example, at time T3), the thermal decomposition of the raw material gas remaining in the processing chamber 201 begins, and highly reactive decomposition products are generated. Since decomposition products tend to adsorb more easily on the opening side than on the deeper side, the more decomposition products are present in the processing chamber 201, the more likely a thick layer (film) is to form on the opening side, which may further reduce step coverage.

[0051] Therefore, in this embodiment, after the start of flash supply of the raw material gas (for example, time T0), the dilution gas is supplied into the processing chamber 201 during the period from time T3 to time T8, preferably from time T3 to time T7.

[0052] Specifically, valve 247d is opened to allow the high-pressure dilution gas filled in the second storage section 260d to flow into the processing chamber 201. At this time, valves 243c and 243e may also be opened to supply inert gas into the processing chamber 201 via nozzles 249a and 249b.

[0053] By opening valve 247d, the diluent gas is flushed in. After the flush supply of the diluent gas begins (e.g., at time T4), the pressure in the processing chamber 201 rises between time T5 and time T6, reaching a maximum value V4 at time T6. The pressure in the processing chamber 201, having reached its maximum value V4, decreases between time T6 and time T9, with the decrease in pressure in the processing chamber 201 ending at time T9. As shown in Figure 4, the pressure in the processing chamber 201 reaches a maximum value at time T6. From the start of the flush supply of the diluent gas until the decrease in pressure in the processing chamber 201 ends at time T9, the raw material gas and decomposition products remaining in the processing chamber 201 are continuously discharged outside the processing chamber 201. This step of discharging the raw material gas and decomposition products outside the processing chamber 201 is also called the exhaust step. As described above, by supplying dilution gas into the processing chamber 201, the raw material gas and decomposition products remaining in the processing chamber 201 can be discharged outside the processing chamber 201 in a large amount, quickly and in a short period of time, compared to the case where dilution gas is not supplied into the processing chamber 201 (as shown by the dashed line in Figure 4).

[0054] The step of supplying the raw material gas into the processing chamber 201 is referred to as step A0. For example, the step from time T1 to time T3, in which the pressure inside the processing chamber 201 increases, is referred to as the first step A1. For example, the step from time T3 to time T5, in which the pressure inside the processing chamber 201 decreases, is referred to as the first step A2. The step of supplying the diluent gas into the processing chamber 201 is referred to as step B. For example, the step from time T5 to time T6, in which the pressure inside the processing chamber 201 increases, is referred to as the second step A1. For example, the step from time T6 to time T9, in which the pressure inside the processing chamber 201 decreases, is referred to as the second step A2. The maximum value at time T3 is referred to as the first maximum value, and the maximum value at time T6 is referred to as the second maximum value. In Figure 4, the implementation periods of steps A0, A1, A2, and B are represented as A0, A1, A2, and B, respectively. This is also the case in Figure 5. Steps A0 and B are initiated by the controller 121 sending commands to valves 247a and 247d to open them, respectively. The start of step B refers to the point when the dilution gas begins to be supplied into the processing chamber 201, or in other words, the point when the dilution gas reaches the processing chamber 201.

[0055] Under the processing conditions described later, a processing gas containing a predetermined element (i.e., a raw material gas containing a predetermined element) can be supplied to the wafer 200 to form a first layer containing the predetermined element on the surface of the wafer 200. The first layer is formed by the adsorption of the raw material gas and decomposition products resulting from the thermal decomposition of a portion of the raw material gas onto the outermost surface of the wafer 200.

[0056] After the pressure in processing chamber 201 has finished decreasing, valve 247d is closed to stop the supply of dilution gas to processing chamber 201. Then, the pressure inside processing chamber 201 is reduced (e.g., by vacuum evacuation) to remove any decomposition products remaining inside processing chamber 201. At this time, valves 243c and 243e are opened, and inert gas at a third flow rate is supplied into processing chamber 201 via nozzles 249a and 249b. This makes it difficult for gas inside processing chamber 201 to enter nozzles 249a and 249b. Subsequently, inert gas at a fourth flow rate (higher than the third flow rate) is supplied into processing chamber 201 while the processing chamber 201 is evacuated. At this time, the inert gas supplied from nozzles 249a and 249b acts as a purge gas. This purges the space where the wafer 200 is located, i.e., the processing chamber 201. The step of vacuum evacuation and / or purging performed here is also called the exhaust step. In this purging process, it is preferable that the inert gas supplied has a lower flow rate and shorter supply time than the diluent gas supplied in step B. Furthermore, as shown in Figure 3, it is preferable to perform this depressurization and purging process multiple times (e.g., 2 to 20 times) (cycle purging).

[0057] When the specified element is silicon (Si), a silane-based gas can be used as the raw material gas. As a silane-based gas, for example, a gas containing Si and a halogen, i.e., a halosilane-based gas, can be used. As the halogen, at least one of the following elements can be used: chlorine (Cl), fluorine (F), bromine (Br), and iodine (I).

[0058] As the raw material gas, chlorosilane-based gases such as tetrachlorosilane (SiCl4) gas, monochlorosilane (SiH3Cl) gas, dichlorosilane (SiH2Cl2) gas, and trichlorosilane (SiHCl3) gas can be used, which do not contain Si-to-Si bonds (i.e., bonds between predetermined elements) in a single molecule. As the first treatment gas, in addition to chlorosilane-based gases, fluorosilane-based gases such as tetrafluorosilane (SiF4) gas and difluorosilane (SiH2F2) gas, bromosilane-based gases such as tetrabromosilane (SiBr4) gas and dibromosilane (SiH2Br2) gas, and iodosilane-based gases such as tetraiodosilane (SiI4) gas and diiodosilane (SiH2I2) gas, which do not contain Si-to-Si bonds (i.e., bonds between predetermined elements) in their molecular structure can also be used.

[0059] Furthermore, as a raw material gas, chlorosilane-based gases such as hexachlorodisilane (Si2Cl6) gas, octachlorotricilane (Si3Cl8) gas, monochlorodisilane (Si2H5Cl) gas, dichlorodisilane (Si2H4Cl2) gas, trichlorodisilane (Si2H3Cl3) gas, tetrachlorodisilane (Si2H2Cl4) gas, monochlorotrisilane (Si3H5Cl) gas, and dichlorotricilane (Si3H4Cl2) gas, which contain two or more Si atoms (i.e., two or more atoms of a predetermined element) in their molecular structure, can be used.

[0060] In addition to the above, other raw material gases can also be used, such as gases containing Si and an amino group in one molecule, i.e., aminosilane gas. An amino group is a monovalent functional group obtained by removing hydrogen (H) from ammonia, a primary amine, or a secondary amine, and can be represented as -NH2, -NHR, or -NR2. Note that R represents an alkyl group, and the two R's in -NR2 may be the same or different.

[0061] For example, aminosilane gases such as tetrakis(dimethylamino)silane (Si[N(CH3)2]4) gas, tris(dimethylamino)silane (Si[N(CH3)2]3H) gas, bis(diethylamino)silane (Si[N(C2H5)2]2H2) gas, bis(tert-butylamino)silane (SiH2[NH(C4H9)]2) gas, and (diisopropylamino)silane (SiH3[N(C3H7)2]) gas can also be used as raw material gases.

[0062] One or more of these can be used as the raw material gas.

[0063] As the inert gas, nitrogen (N2) gas, argon (Ar) gas, helium (He) gas, neon (Ne) gas, xenon (Xe) gas, and other noble gases can be used. One or more of these can be used as the inert gas. This also applies to each of the steps described later.

[0064] As a diluent gas, for example, the same gas as the inert gas mentioned above can be used. One or more of these can be used as diluent gases.

[0065] [Second Processing Step] Subsequently, a reaction gas is supplied as a processing gas to the wafer 200 in the processing chamber 201.

[0066] Specifically, valve 243b is opened, and the reaction gas flows into the gas supply pipe 232b. The reaction gas flow rate is adjusted by MFC 241b and supplied into the processing chamber 201 via nozzle 249b, and exhausted from exhaust port 231a. At this time, the reaction gas is supplied to the wafer 200 (reaction gas supply). At this time, valves 243c and 243e may be opened to supply inert gas into the processing chamber 201 via nozzles 249a and 249b.

[0067] By supplying a reaction gas to the wafer 200 under the processing conditions described later, at least a portion of the first layer formed on the wafer 200 reacts with the reaction gas and is modified. As a result, a second layer, which is a modified layer of the first layer, is formed on the wafer 200.

[0068] As the reaction gas, for example, an oxidizing gas can be used. As the oxidizing gas, for example, an oxygen (O) and H-containing gas can be used. As O and H-containing gases, for example, water vapor (H2O gas), hydrogen peroxide (H2O2) gas, hydrogen (H2) gas + oxygen (O2) gas, H2 gas + ozone (O3) gas, etc. can be used. In addition to O and H-containing gases, as the oxidizing gas, for example, an O-containing gas can be used. As O-containing gases, for example, O2 gas, O3 gas, nitrous oxide (N2O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO2) gas, carbon monoxide (CO) gas, carbon dioxide (CO2) gas, etc. can be used. Note that O and H-containing gases are also a type of O-containing gas. As the oxidizing gas, one or more of these can be used. Note that in this specification, the joint description of two gases such as "H2 gas + O2 gas" means a mixed gas of H2 gas and O2 gas. When supplying a mixed gas, the two gases may be mixed (premixed) in the supply pipe before being supplied to the processing chamber 201, or the two gases may be supplied separately to the processing chamber 201 from different supply pipes and then mixed (postmixed) within the processing chamber 201.

[0069] After forming the second layer on the surface of the wafer 200, valve 243b is closed to stop the supply of reaction gas into the processing chamber 201. Then, the processing chamber 201 is evacuated to remove any decomposition products remaining inside the processing chamber 201. At this time, valves 243c and 243e are opened, and inert gas is supplied into the processing chamber 201 via nozzles 249a and 249b. The inert gas supplied from nozzles 249a and 249b acts as a purge gas, thereby purging the processing chamber 201.

[0070] [Perform the prescribed number of times] A film can be formed on the surface of the wafer 200 by performing the above-described first and second processing steps in a non-simultaneous, i.e., non-synchronized, order cycle a predetermined number of times (n times, where n is an integer of 1 or more). For example, if the predetermined element contained in the raw material gas is Si and the reaction gas is an oxidizing gas, a silicon oxide film (SiO film) can be formed on the surface of the wafer 200. It is preferable to repeat the above cycle multiple times. That is, it is preferable to make the thickness of the second layer formed per cycle thinner than the desired film thickness, and to repeat the above cycle multiple times until the thickness of the film formed by stacking the second layers reaches the desired thickness.

[0071] The following are examples of processing conditions when supplying gas in the first and second processing steps.

[0072] The processing conditions when supplying the raw material gas in the first processing step are as follows: Processing temperature: 250-800°C, preferably 600-700°C Processing pressure: 1 to 2666 Pa, preferably 1 to 1333 Pa Raw material gas supply flow rate: 1 to 500 slm, preferably 10 to 200 slm Raw material gas supply time: 0.01 to 5 seconds, preferably 0.5 to 5 seconds Partial pressure of raw material gas: 0.00005 to 3999 Pa, preferably 0.06 to 1333 Pa Inert gas supply flow rate (per gas supply pipe: 2nd flow rate): 0-5 slm An example is shown. Here, it is preferable that the inert gas supply flow rate (second flow rate) is less than or equal to the first flow rate, which is the supply flow rate of the dilution gas described later.

[0073] In this specification, "processing temperature" refers to the temperature of the wafer 200 or the temperature inside the processing chamber 201, and "processing pressure" refers to the pressure inside the processing chamber 201. "Processing time" refers to the duration of the process. Furthermore, if the supply flow rate includes 0 slm, 0 slm means the case where the substance (gas) is not supplied. These definitions also apply in the following explanations.

[0074] The processing conditions when supplying the dilution gas in the first processing step are as follows: Dilution gas supply flow rate (first flow rate): 10 to 500 slm, preferably 10 to 300 slm Dilution gas supply time: 0.5 to 10 seconds, preferably 0.5 to 5 seconds Dilution gas partial pressure: 0.00005 to 2999 Pa, preferably 0.06 to 1333 Pa Examples are given. Other conditions can be the same as the processing conditions when supplying the raw material gas.

[0075] The processing conditions when depressurizing (or vacuuming) the processing chamber 201 during the exhaust step are as follows: Inert gas supply flow rate (3rd flow rate): 0-5 slm Inert gas supply time: 0.5-10 seconds Examples include the following. The processing temperature can be the same as the processing conditions when supplying the raw material gas.

[0076] The processing conditions when purging the processing chamber 201 during the exhaust step are as follows: Inert gas supply flow rate (4th flow rate): 10-300 slm Inert gas supply time: 0.5-10 seconds Examples include the following. The processing temperature can be the same as the processing conditions when supplying the raw material gas. Here, it is preferable that at least one of the following is satisfied: purging is performed for a shorter time than in step B, and the fourth flow rate is smaller than the supply flow rate of the dilution gas in step B (first flow rate).

[0077] The processing conditions when supplying the reaction gas in the second processing step are as follows: Reaction gas supply flow rate: 1 to 10 slm, preferably 1 to 5 slm Reaction gas supply time: 1 to 120 seconds, preferably 1 to 60 seconds Examples are given. Other conditions can be the same as the processing conditions when supplying the raw material gas.

[0078] (After-purge and return to atmospheric pressure) After the formation of a film of the desired thickness on the wafer 200 is complete, inert gas is supplied as a purge gas into the processing chamber 201 from nozzles 249a and 249b, respectively, and exhausted from exhaust port 231a. This purges the processing chamber 201, removing any remaining gases and decomposition products. Subsequently, the atmosphere inside the processing chamber 201 is replaced with inert gas, and the pressure inside the processing chamber 201 is returned to atmospheric pressure.

[0079] (Boat unloading and wafer discharge) Subsequently, the seal cap 219 is lowered by the boat elevator 115, opening the lower end of the manifold 209. Then, the processed wafer 200, supported by the boat 217, is transported out of the reaction tube 203 from the lower end of the manifold 209. After being transported out of the reaction tube 203, the processed wafer 200 is removed from the boat 217.

[0080] (3) Effects of this embodiment According to this embodiment, one or more of the following effects can be obtained.

[0081] (a) By performing step A1, which increases the pressure in the processing chamber 201, at least partially simultaneously with step A0, the partial pressure of the raw material gas in the processing chamber 201 can be increased. As a result, the amount of raw material gas molecules reaching the deeper part can be increased. This reduces the difference in thickness of the film formed on the opening side and the deeper side, thereby improving the step coverage of the film formed in the recess.

[0082] Furthermore, by starting step B before the completion of the first step A2, it is possible to reduce the likelihood of the raw material gas remaining (residing) in the processing chamber 201 for an extended period, while also reducing the mole fraction (or partial pressure of the decomposition products) within the processing chamber 201. This suppresses the adsorption of localized decomposition products on the opening side, thereby improving the step coverage of the film formed in the recess.

[0083] (b) By starting step B after the pressure in the processing chamber 201 has reached its first maximum value, the partial pressure of the raw material gas can be sufficiently increased, making it easier for the raw material gas to reach the deeper parts, and then the raw material gas and decomposition products can be discharged outside the processing chamber 201. This further improves the step coverage of the film formed in the recesses.

[0084] (c) By performing step B such that the pressure inside the processing chamber 201 reaches a maximum value after the start of step B, that is, by supplying a large flow rate of diluent gas into the processing chamber 201 in step B, the raw material gas and decomposition products are further facilitated to be discharged outside the processing chamber 201. This further improves the step coverage of the film formed in the recess.

[0085] (d) By starting step B during a period when the pressure inside the processing chamber 201 is more than half of the maximum pressure V3 inside the processing chamber 201 during the supply step, the raw material gas can be discharged from the processing chamber 201 before the thermal decomposition of the raw material gas progresses, while ensuring a period of high partial pressure of the raw material gas. This further improves the step coverage of the film formed in the recess.

[0086] (e) By ending step B after the pressure reduction in the processing chamber 201 has finished, that is, by continuing step B until the pressure reduction in the processing chamber 201 has finished, it becomes easier to further discharge any remaining raw material gas and decomposition products from the processing chamber 201. This ensures improved step coverage.

[0087] (f) By supplying the raw material gas previously stored in the first storage unit 260a into the processing chamber 201 for at least a portion of the supply step, it becomes easier to further increase the partial pressure of the raw material gas in the processing chamber 201. This ensures that the above-mentioned effects are obtained.

[0088] (g) By supplying the dilution gas previously stored in the second storage unit 260d into the processing chamber 201 during at least a portion of step B, it becomes easier to supply a large amount of dilution gas into the processing chamber 201. This makes it easier to precisely control the timing of when the supply of dilution gas begins. It also makes it easier to obtain further effects such as shortening the residence time of the raw material gas and decomposition products.

[0089] (h) When the supply step is performed under conditions in which the raw material gas undergoes thermal decomposition in the processing chamber 201, the impact on step coverage due to the increase in decomposition products becomes significant as the residence (residual) time of the raw material gas increases. Even in such cases, the above-mentioned effects can be obtained according to this disclosure.

[0090] (i) When a source gas containing two or more atoms of a predetermined element in its molecular structure is used, the effect on step coverage due to the increase in decomposition products becomes significant as the residence time of the source gas increases. Even in such cases, the above-mentioned effects can be obtained according to this disclosure.

[0091] (j) In the supply step, the above effects can be obtained by supplying a dilution gas at a first flow rate into the processing chamber 201 in at least part of step B, and by not supplying dilution gas into the processing chamber 201 before the start of step B.

[0092] (k) In at least part of step B, a dilution gas at a first flow rate is supplied into the processing chamber 201, or, before the start of step B, no dilution gas is supplied into the processing chamber 201, or a gas other than the processing gas at a second flow rate of less than or equal to the first flow rate is supplied into the processing chamber 201. Even in such a case, the above effects can be obtained.

[0093] (l) By controlling the controller 121 so that valve 247d opens after valve 247a opens, step B can be started after the start of step A0 and before the end of step A2. This makes it possible to obtain the above-mentioned effects.

[0094] (m) By performing an exhaust step (i.e., depressurization and purging in the processing chamber 201) after step B, the pressure in the processing chamber 201 can be increased or decreased. This makes it easier to discharge the raw material gas and decomposition products to the outside of the processing chamber 201 and to the surface of the wafer 200 and into the processing chamber 201.

[0095] (n) In step B, there are more raw material gases and decomposition products on the surface of the wafer 200 and inside the processing chamber 201 compared to during the exhaust step. Therefore, it is preferable that at least one of the following conditions is met: the purging in the exhaust step is performed for a shorter time than in step B, and the fourth flow rate is made smaller than the supply flow rate of the dilution gas (first flow rate) in step B. This makes it easier to discharge raw material gases and decomposition products in step B, while reducing the amount of inert gas consumed during purging in the exhaust step and the time required to process the wafer 200.

[0096] (4) Variations The film deposition sequence in this embodiment can be modified as shown in the following examples. These modifications can be combined in any way. Unless otherwise specified, the processing procedures and conditions in each step of each modification can be the same as those in each step of the film deposition sequence described above.

[0097] In this modified example, step B may be started before the pressure in the processing chamber 201 reaches its first maximum value. This will be explained in detail below using Figure 5.

[0098] In Figure 5, the vertical axis represents the pressure inside the processing chamber 201, and the horizontal axis represents time. The solid line in Figure 5 shows the change in pressure inside the processing chamber 201 during the first processing step in the modified example. The dashed line in Figure 5 shows the change in pressure inside the processing chamber 201 from time t3 onward when the dilution gas is not supplied to the processing chamber 201 within a predetermined time after the start of the flash supply of the raw material gas.

[0099] If no diluent gas is supplied in the first processing step, the pressure in the processing chamber 201, when the raw material gas is flash-supplied, rises rapidly from time t1 to time t4, reaching a maximum value v3 at time t4. After reaching the maximum value v3, the pressure in the processing chamber 201 decreases from time t4 to time t6. The pressure v2 at time t2 is half the pressure of the maximum value v3. If a diluent gas is supplied at time t3 after the flash supply of the raw material gas, the pressure in the processing chamber 201 rises from time t3 to time t5, reaching a maximum value v4 at time t5. After reaching the maximum value v4, the pressure in the processing chamber 201 decreases from time t5 to time t7, and the decrease in pressure in the processing chamber 201 ends at time t7. As shown in Figure 5, the pressure in the processing chamber 201 takes its first maximum value at time t5.

[0100] For example, the step from time t1 to time t5 in which the pressure inside the processing chamber 201 increases is referred to as the first step A1. For example, the step from time t5 to time t7 in which the pressure inside the processing chamber 201 decreases is referred to as the first step A2.

[0101] In this modified example, at least some of the effects of the above-described embodiment can be obtained.

[0102] In this modified example, as shown in Figure 5, it is preferable to start step B during a period when the pressure inside the processing chamber 201 is more than half of the maximum pressure v3 inside the processing chamber 201 (for example, during the period from time t2 to time t4). This allows the raw material gas to reach the deeper parts sufficiently before the raw material gas and decomposition products can be discharged outside the processing chamber 201.

[0103] In this modified example, as shown in Figure 5, it is preferable to start step B after the start of the first step A1. This allows the partial pressure of the raw material gas to be increased to a certain extent, allowing the raw material gas to reach the deeper parts sufficiently before the raw material gas and decomposition products can be discharged outside the processing chamber 201. This improves the step coverage of the film formed in the recesses.

[0104] In the embodiments described above, the gas primarily supplied into the processing chamber 201 before the dilution gas supply is initiated is the raw material gas. Therefore, before the dilution gas supply is initiated, the pressure (total pressure) in the processing chamber 201 and the partial pressure of the raw material gas can be considered substantially equal. For this reason, in this modified example, the dilution gas supply is initiated before the partial pressure of the raw material gas in the processing chamber 201 reaches its peak. In contrast, initiating the dilution gas supply after the partial pressure of the raw material gas in the processing chamber 201 reaches its peak allows the raw material gas to reach deeper parts more easily, and then facilitates the discharge of the raw material gas and decomposition products outside the processing chamber 201. Consequently, the step coverage of the film formed in the recesses can be further improved.

[0105] <Other aspects of this disclosure> The aspects of this disclosure have been specifically described above. However, this disclosure is not limited to the aspects described above and can be modified in various ways without departing from its essence.

[0106] In the embodiments described above, examples were given in which the raw material gas and diluent gas are flash-supplied in steps A0 and B, respectively. However, the disclosure is not limited thereto. For example, in each of steps A0 and B, the raw material gas and diluent gas may be supplied into the processing chamber 201 without pre-filling the first storage section 260a and the second storage section 260d, respectively (non-flash supply). In this case, the first storage section 260a and one of the valves 243a and 247a may be omitted from the raw material gas supply system. Similarly, the second storage section 260d and one of the valves 243d and 247d may be omitted from the diluent gas supply system. In this embodiment, at least some of the effects of the embodiments described above can be obtained.

[0107] In the embodiments described above, an example was given in which a dilution gas is supplied into the processing chamber 201 in step B. However, the disclosure is not limited thereto. For example, in step B, the flow rate of the dilution gas supplied into the processing chamber 201 may be increased. In this embodiment as well, it is possible to reduce the mole fraction (or partial pressure of the decomposition products) of the decomposition products in the processing chamber 201 while making it less likely for the raw material gas to remain (residue) in the processing chamber 201 for a long time, and the same effects as in the embodiments described above can be obtained.

[0108] In the above-described embodiments, an example was given of a film deposition process in which a film containing a predetermined element is formed on a wafer 200, that is, a case in which the processing gas is a gas that forms a film on the wafer 200. However, the disclosure is not limited thereto. For example, the processing gas may be a gas other than the gas that forms a film on the wafer 200.

[0109] In the embodiments described above, Si was used as an example of the specified element. However, this disclosure is not limited thereto. For example, the specified element may be a metallic element such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W), germanium (Ge), or nitrogen (N) or oxygen (O).

[0110] In the embodiments described above, an oxidizing gas was used as an example of the reaction gas. However, the disclosure is not limited thereto. For example, reducing gases including hydrogen (H2) gas, deuterium (D2) gas, borane (BH3) gas, diborane (B2H6) gas, carbon monoxide (CO) gas, ammonia (NH3) gas, monosilane (SiH4) gas, disilane (Si2H6) gas, trisilane (Si3H8) gas, monogermane (GeH4) gas, digermane (Ge2H6), etc., or nitriding gases including ammonia (NH3) gas, diazene (N2H2) gas, hydrazine (N2H4) gas, N3H8 gas, etc., may be used as the reaction gas.

[0111] In the embodiments described above, an example was given in which the first storage section 260a and the valves 243a and 247a provided on its upstream and downstream sides, respectively, are located upstream of the confluence of the gas supply pipes 232a and 232c. However, the disclosure is not limited thereto. For example, the first storage section 260a and the valves 243a and 247a can also be located downstream of the confluence of the gas supply pipes 232a and 232c. The same applies to the second storage section 260d and the valves 243d and 247d provided on its upstream and downstream sides, respectively.

[0112] The above-described embodiment explains an example in which an inert gas (i.e., a gas that does not react in the processing chamber 201) is used as the diluent gas. However, this disclosure is not limited thereto. The diluent gas can be any gas that reduces the concentration of the processing gas in the processing chamber 201 by being supplied to the processing chamber 201 simultaneously with the processing gas, i.e., any gas that is not the processing gas. The diluent gas may also be a gas that exhibits a chemical reaction, for example, a gas that oxidizes or reduces the surface of the wafer 200 or the components or gas in the processing chamber 201. In this case, since there is a period during the first processing step when the processing gas and the diluent gas are present in the processing chamber 201 simultaneously, it is preferable to use a gas that does not react with the processing gas in the gas phase as the diluent gas. Note that inert gases are often less expensive than gases that exhibit a chemical reaction, so using an inert gas as the diluent gas can reduce the processing cost.

[0113] The above-described embodiment illustrates an example in which the dilution gas is flush-supplied into the processing chamber 201. However, the disclosure is not limited thereto. For example, the inert gas supplied from the inert gas supply system may be further included in the dilution gas. In this case, the gas supply pipes 232c, 232e, MFCs 241c, 241e, and valves 243c, 243e may also be further included in the dilution gas supply system. When the dilution gas is supplied from multiple routes in this way, the sum of the flow rates of the dilution gas supplied from each route may be used as the flow rate of the dilution gas supplied in step B. Furthermore, during purging in the processing chamber 201, the dilution gas may be further supplied into the processing chamber 201 and act as a purge gas as well.

[0114] It is preferable that the recipes used for each process be prepared individually according to the processing content, recorded and stored in the storage device 121c via a telecommunications line or external storage device 123. When starting each process, it is preferable that the CPU 121a appropriately selects the appropriate recipe from among the multiple recipes recorded and stored in the storage device 121c according to the processing content. This allows the processing device to perform various processes with good reproducibility on films of various film types, composition ratios, film quality, and film thickness. Furthermore, it reduces the burden on the operator and allows each process to be started quickly while avoiding operational errors.

[0115] The above-mentioned recipes are not limited to newly created ones; they may also be prepared, for example, by modifying existing recipes already installed on the processing unit. When modifying a recipe, the modified recipe may be installed on the processing unit via a telecommunications line or a recording medium on which the recipe is stored. Alternatively, existing recipes already installed on the processing unit may be directly modified by operating the input / output device 122 provided on the existing processing unit.

[0116] The above-described embodiments illustrate an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at once. This disclosure is not limited to the above embodiments and can be suitably applied, for example, to forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at once. Furthermore, the above-described embodiments illustrate an example of forming a film using a substrate processing apparatus having a hot-wall type processing furnace. This disclosure is not limited to the above embodiments and can be suitably applied to forming a film using a substrate processing apparatus having a cold-wall type processing furnace.

[0117] Even when using these processing devices, each process can be carried out using the same processing procedures and conditions as described above for the embodiments and modifications, and the same effects as described above for the embodiments and modifications can be obtained.

[0118] The above-described embodiments and modifications can be used in combination as appropriate. The processing procedure and processing conditions in this case can be the same as, for example, the processing procedure and processing conditions of the above-described embodiments and modifications. [Explanation of symbols]

[0119] 200 wafers (substrates) 201 Processing Room

Claims

1. (a0) A step of supplying a processing gas into a processing chamber in which a substrate having a recess on its surface is placed inside, (a1)(a0) and at least partially simultaneously, a step of increasing the pressure inside the processing chamber, (a2) A step of reducing the pressure inside the processing chamber, (b) A step of supplying a dilution gas into the processing chamber, or increasing the flow rate of the dilution gas supplied into the processing chamber, A supply process including, which is carried out such that the pressure inside the processing chamber takes on one or more maximum values, During at least part of the supply process, an exhaust process is performed to exhaust the contents of the processing chamber, It has, In the supply process, (b) is started before the end of the first (a2). Substrate processing method.

2. The substrate processing method according to claim 1, wherein in the supply step, (b) is started after the pressure in the processing chamber reaches the first maximum value.

3. The substrate processing method according to claim 1, wherein (b) is performed after the start of (b) such that the pressure in the processing chamber reaches the maximum value.

4. The substrate processing method according to claim 1, wherein in the supply step, (b) is started before the pressure in the processing chamber reaches the first maximum value.

5. The substrate processing method according to any one of claims 1 to 4, wherein (b) is started during a period in which the pressure inside the processing chamber is half or more of the maximum value of the pressure inside the processing chamber in the supply step.

6. A substrate processing method according to any one of claims 1 to 4, wherein (b) is started after the start of the first (a1).

7. The substrate processing method according to any one of claims 1 to 4, wherein for at least a portion of the supply process, the processing gas previously stored in the first storage unit is supplied into the processing chamber.

8. The substrate processing method according to any one of claims 1 to 4, wherein for at least a portion of the period of (b), the dilution gas previously stored in the second storage unit is supplied to the processing chamber.

9. The substrate processing method according to any one of claims 1 to 4, wherein the supply step is performed under conditions in which the processing gas is thermally decomposed in the processing chamber.

10. The process includes the supply step and further comprises a film formation step in which a film containing a predetermined element is formed on the substrate, The processing gas is a gas that contains atoms of the predetermined element in its molecular structure. A substrate processing method according to any one of claims 1 to 4.

11. The processing gas is a gas that contains two or more atoms of the predetermined element in its molecular structure. The substrate processing method according to claim 10.

12. (b) In at least a portion thereof, the dilution gas at the first flow rate is supplied into the processing chamber, Prior to the start of (b), the dilution gas is not supplied into the processing chamber, or a second flow rate of purge gas at or below the first flow rate is supplied into the processing chamber. A substrate processing method according to any one of claims 1 to 4.

13. (a0) is initiated by sending a command from the control unit to the first valve to open the first valve, which is provided in the flow path connecting the processing gas supply source and the processing chamber. (b) is initiated by sending a command from the control unit to the second valve to open the second valve, which is provided in the flow path connecting the dilution gas supply source and the processing chamber. The first valve and the second valve are controlled by the control unit such that the second valve opens after the first valve opens. A substrate processing method according to any one of claims 1 to 4.

14. In the supply process, in at least a portion of (b), the first flow rate of the dilution gas is supplied into the processing chamber. (c1) A step of reducing the pressure inside the processing chamber without supplying purge gas into the processing chamber, or while supplying purge gas at a third flow rate less than or equal to the first flow rate into the processing chamber, (c2) A step of exhausting the processing chamber while supplying the purge gas at a fourth flow rate equal to or greater than the third flow rate into the processing chamber, The process further includes performing a cycle including (b) at least once after the completion of (b), A substrate processing method according to any one of claims 1 to 4.

15. The substrate processing method according to claim 14, wherein at least one of the following is performed: (c1) for a shorter time than (b), and the fourth flow rate is made smaller than the first flow rate.

16. (a0) A step of supplying a processing gas into a processing chamber in which a substrate is placed inside, (a1)(a0) and at least partially simultaneously, a step of increasing the pressure inside the processing chamber, (a2) A step of reducing the pressure inside the processing chamber, (b) A step of supplying a dilution gas into the processing chamber, or increasing the flow rate of the dilution gas supplied into the processing chamber, A supply process including, which is carried out such that the pressure inside the processing chamber takes on one or more maximum values, During at least part of the supply process, an exhaust process is performed to exhaust the contents of the processing chamber, It has, In the supply process, (b) is started before the end of the first (a2). A method for manufacturing a semiconductor device.

17. A processing chamber in which a substrate having a recess on its surface is placed inside, A supply system configured to supply a processing gas and a dilution gas into the aforementioned processing chamber, An exhaust system is configured to connect the processing chamber and the exhaust device, and to control the exhaust within the processing chamber. A control unit is configured to control the supply system and the exhaust system so as to perform an exhaust process that exhausts the processing room for at least a portion of the supply process, and in the supply process, (a0) a step of supplying a processing gas into the processing room; (a1) a step of increasing the pressure in the processing room at least partially simultaneously with (a0); (a2) a step of decreasing the pressure in the processing room; and (b) a step of supplying a diluent gas into the processing room or increasing the flow rate of the diluent gas supplied into the processing room, such that the pressure in the processing room takes one or more maximum values; and an exhaust process that exhausts the processing room for at least a portion of the supply process, such that in the supply process, (b) is started before the end of the first (a2); A substrate processing apparatus having

18. (a0) A procedure for supplying a processing gas into a processing chamber in which a substrate having a recess on its surface is placed inside, (a1)(a0) and at least partially simultaneously, a procedure for increasing the pressure inside the processing chamber, (a2) A procedure for reducing the pressure inside the processing chamber, (b) A procedure for supplying a dilution gas into the processing chamber, or for increasing the flow rate of the dilution gas supplied into the processing chamber, A supply procedure including, carried out such that the pressure inside the processing chamber takes on one or more maximum values, During at least part of the supply procedure, an exhaust procedure is performed to exhaust the processing chamber, A program that causes a circuit board processing device to execute commands via a computer.

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