Semiconductor manufacturing system, substrate standby module, and substrate processing method

Abstract

This semiconductor manufacturing system provides technology that minimizes footprint expansion and enables processing to be performed along the substrate transport path. [Solution] The system includes a transport module for transporting substrates, and a substrate waiting module connected to the transport module for temporarily holding substrates transported by the transport module. The substrate waiting module includes a container body having an internal space for housing substrates, a gas exhaust unit capable of sucking gas from the internal space to form a vacuum atmosphere, a movable partition member provided to move up and down vertically within the internal space and capable of dividing the internal space vertically by contacting the wall of the container body, and a substrate processing unit for performing substrate processing on a substrate housed in one of the two spaces separated by the movable partition member.

Description

【Technical Field】 【0001】 The present disclosure relates to a semiconductor manufacturing system, a substrate waiting module, and a substrate processing method. 【Background Art】 【0002】 Patent Document 1 discloses a semiconductor manufacturing system (substrate processing apparatus) in which a post-process module is installed directly below a processing module that processes a substrate. The vacuum transfer module of this semiconductor manufacturing system unloads the substrate processed by the processing module into a vacuum transfer chamber and then loads the substrate into the post-process module. Then, the post-process module performs degassing treatment, film formation treatment, etc. on the substrate. 【Prior Art Documents】 【Patent Documents】 【0003】 【Patent Document 1】 Japanese Patent No. 7090469 【Summary of the Invention】 【Problems to be Solved by the Invention】 【0004】 The present disclosure provides a technique that suppresses an increase in footprint and enables execution of processing in a substrate transfer path. 【Means for Solving the Problems】 【0005】 According to one aspect of the present disclosure, a semiconductor manufacturing system is provided, comprising a transport module for transporting substrates and a substrate waiting module connected to the transport module for temporarily holding the substrates transported by the transport module, wherein the substrate waiting module comprises a container body having an internal space for housing the substrates, a gas exhaust unit capable of sucking gas from the internal space to form a vacuum atmosphere, a movable partition member provided to be vertically movable in the internal space and capable of dividing the internal space vertically by contacting the wall of the container body, and a substrate processing unit for performing substrate processing on the substrate housed in one of the two spaces separated by the movable partition member. [Effects of the Invention] 【0006】 According to one embodiment, it is possible to suppress the expansion of the footprint and enable processing to be performed in the transport path of the substrate. [Brief explanation of the drawing] 【0007】 [Figure 1] This is a plan view showing the overall configuration of a semiconductor manufacturing system. [Figure 2] This is a schematic cross-sectional view showing the load lock module and its surrounding components. [Figure 3] This diagram schematically shows the gas exhaust and gas supply sections of a load lock module. [Figure 4] This is a flowchart showing the substrate processing method for semiconductor manufacturing systems. [Figure 5] Figure 5(A) is the first figure showing the operation of the load lock module. Figure 5(B) is the second figure showing the operation of the load lock module. [Figure 6] Figure 6(A) is Figure 3, which shows the operation of the load lock module. Figure 6(B) is Figure 4, which shows the operation of the load lock module. [Figure 7] Figure 7(A) is Figure 5, which shows the operation of the load lock module. Figure 7(B) is Figure 6, which shows the operation of the load lock module. [Figure 8] Figure 8(A) is Figure 7, which shows the operation of the load lock module. Figure 8(B) is Figure 8, which shows the operation of the load lock module. [Figure 9] Figure 9(A) is Figure 9 illustrating the operation of the load lock module. Figure 9(B) is Figure 10 illustrating the operation of the load lock module. [Figure 10] Figure 10(A) is Figure 11, which shows the operation of the load lock module. Figure 10(B) is Figure 12, which shows the operation of the load lock module. [Figure 11] Figure 11 shows the state in which the substrate after degassing is cooled by bringing it close to the movable partition plate. [Modes for carrying out the invention] 【0008】 The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted. 【0009】 <Overall configuration of semiconductor manufacturing system 1> As shown in Figure 1, the semiconductor manufacturing system 1 according to this embodiment is a multi-chamber type substrate processing system equipped with multiple processing modules PM for processing the substrate W. Each processing module PM performs substrate processing such as film deposition, etching, modification, cleaning, bonding, stripping, and ashing on the substrate W transported inside. In addition to each processing module PM, the semiconductor manufacturing system 1 also includes a vacuum transport module TM, multiple pass modules PSM, multiple standby modules STM, an atmospheric transport module LM, multiple load lock modules LLM, and a control device 90. 【0010】 Eight processing modules PM are installed in the vacuum transport module TM according to this embodiment (therefore, they are also referred to as processing modules PM1 to PM8). Each processing module PM1 to PM8 receives and transports substrates W via the vacuum transport module TM and performs substrate processing on the transported substrates W. Of course, there is no particular limit to the number of processing modules PM provided in the semiconductor manufacturing system 1. Furthermore, multiple processing modules PM may perform the same processing on each other, or some or all of them may perform different processing. The semiconductor manufacturing system 1 may also be configured to perform plasma processing in some or all of the processing modules PM. 【0011】 Each processing module PM1 to PM8 includes a processing container 10 for housing the substrate W, and a substrate support section 11 for placing the substrate W inside the processing container 10. The substrate support section 11 is equipped with a lifter (not shown) for raising and lowering the substrate W, and works in cooperation with the vacuum transport device 21 of the vacuum transport module TM to receive and transfer the substrate W. 【0012】 Furthermore, each processing module PM1 to PM8 is connected to the vacuum transport module TM via a gate valve 12. Each processing module PM1 to PM8 can transport the substrate W to the processing container 10 by opening the gate valve 12, and can reduce the pressure inside the processing container 10 to a vacuum atmosphere by closing the gate valve 12. 【0013】 The vacuum transport module TM of the semiconductor manufacturing system 1 comprises a transport container 20 connected to each processing module PM1 to PM8 and the load lock module LLM, and a vacuum transport device 21 provided inside the transport container 20 for transporting substrates W. The transport container 20 is formed in a rectangular shape in plan view and is hermetically sealed to the outside. The inside of the transport container 20 is reduced to a vacuum atmosphere by a depressurization mechanism (not shown). The vacuum transport device 21 moves inside the transport container 20 to transport substrates W based on the control of the control device 90. Although Figure 1 illustrates a vacuum transport device 21 equipped with two forks, the vacuum transport device 21 is not limited to this and may be equipped with one or three or more forks. 【0014】 Further, the vacuum transfer module TM according to the embodiment connects a plurality of transfer containers 20 having a vacuum transfer device 21 to each other via a plurality of path modules PSM. Specifically, the vacuum transfer module TM includes a first vacuum transfer module TM1 and a second vacuum transfer module TM2 in this order in a direction away from the atmospheric transfer module LM (load lock module LLM). Then, the vacuum transfer module TM connects between the first vacuum transfer module TM1 and the second vacuum transfer module TM2 by a plurality of path modules PSM. 【0015】 Four processing modules PM1 to PM4, two path modules PSM, and two load lock modules LLM are connected to the first vacuum transfer module TM1. On the other hand, four processing modules PM5 to PM8, two path modules PSM, and two standby modules STM are connected to the second vacuum transfer module TM2. However, the semiconductor manufacturing system 1 is not limited to such a configuration. For example, a system including one transfer container 20 and one vacuum transfer device 21 may be used. 【0016】 The vacuum transfer module TM can transfer the substrate W to any module by the vacuum transfer device 21. For example, the semiconductor manufacturing system 1 can transfer the substrate W from the load lock module LLM to the target processing module PM, perform substrate processing in the target processing module PM, and then transfer the substrate W from this processing module PM to the load lock module LLM. Alternatively, the vacuum transfer module TM may transfer the substrate W between two processing modules PM. As an example, as shown by the two-dot chain line in FIG. 1, the semiconductor manufacturing system 1 can transfer and process the substrate W processed in the processing module PM1 to the processing module PM5. In this case, the vacuum transfer module TM transfers the substrate W from the processing module PM1 to the pass module PSM by the vacuum transfer device 21 of the first vacuum transfer module TM1. Further, the vacuum transfer module TM transfers the substrate W from the pass module PSM to the processing module PM5 by the vacuum transfer device 21 of the second vacuum transfer module TM2. 【0017】 Two pass modules PSM are provided between the first vacuum transfer module TM1 and the second vacuum transfer module TM2. As described above, each pass module PSM constitutes a substrate standby module that allows the substrate W to pass between the first vacuum transfer module TM1 and the second vacuum transfer module TM2 and temporarily waits for the passing substrate W. Note that the number of pass modules PSM is not limited to two, and may be one or three or more. 【0018】 Each pass module PSM has a pass container 30 connected to the mutual transfer container 20 and a substrate support portion 31 capable of supporting the substrate W in the pass container 30. A gate 32 capable of opening and closing the pass container 30 is provided between the pass module PSM and the first vacuum transfer module TM1. Further, a gate 33 capable of opening and closing the pass container 30 is provided between the pass module PSM and the second vacuum transfer module TM2. Note that the semiconductor manufacturing system 1 may have a configuration in which two transfer containers 20 and the pass container 30 are communicated without including the gates 32 and 33. 【0019】 Furthermore, multiple standby modules STM are provided in the second vacuum transport module TM2, two of them located on the opposite side of each pass module PSM. Each standby module STM constitutes a substrate standby module that temporarily holds substrates W before or after substrate processing. Each standby module STM in this embodiment has substantially the same configuration as the pass module PSM. Note that the number of standby modules STM is not limited to two; it may be one or three or more. Also, the standby modules STM do not necessarily have to be installed in the semiconductor manufacturing system 1. 【0020】 On the other hand, the atmospheric transport module LM of the semiconductor manufacturing system 1 transports the substrate W while maintaining an atmospheric pressure environment inside. The atmospheric transport module LM comprises a transport container 40 connected to each load lock module LLM, and an atmospheric transport device 41 provided inside the transport container 40 for transporting the substrate W. The atmospheric transport module LM may also be equipped with an aligner on the side for positioning the substrate W. Furthermore, the atmospheric transport module LM may have an FFU (Fan Filter Unit) that flows clean air down into the transport container 40. 【0021】 The atmospheric transport module LM can, for example, utilize an EFEM (Equipment Front End Module). In this case, one side of the atmospheric transport module LM is provided with multiple load ports LP, each containing a storage container CS with multiple substrates W inside, or an empty storage container CS. The storage container CS can, for example, utilize a FOUP (Front Opening Unified Pod). 【0022】 The atmospheric transport device 41 moves within the transport container 40 to transport the substrate W based on the control of the control device 90, and loads and unloads the substrate W into and out of each load lock module LLM, storage container CS, aligner, etc. This atmospheric transport device 41 can employ substantially the same configuration as the vacuum transport device 21. 【0023】 The load lock module LLM is a substrate waiting module provided between the vacuum transport module TM and the atmospheric transport module LM, and has the function of temporarily holding the substrate W and allowing it to pass between the two modules. In this embodiment, two load lock modules LLM are provided along the longitudinal direction of the atmospheric transport module LM. However, the number of load lock modules LLM is not particularly limited and may be one or three or more. 【0024】 Each load lock module LLM comprises a container body 50 for housing the substrate W. Each load lock module LLM also includes a gate valve 52 between the container body 50 and the transport container 40 of the atmospheric transport module LM, and a gate valve 53 between the container body 50 and the transport container 20 of the vacuum transport module TM. Each load lock module LLM communicates with the atmospheric transport module LM by opening the gate valve 52 in an atmospheric pressure environment. Furthermore, each load lock module LLM communicates with the vacuum transport module TM by opening the gate valve 53 in a vacuum environment. 【0025】 Furthermore, each load lock module LLM according to the embodiment is capable of performing appropriate substrate processing (e.g., degassing) on ​​the contained substrate W, in addition to allowing the substrate W to pass through while it is in standby mode and switching between atmospheric pressure and a vacuum atmosphere. Specifically, the load lock module LLM includes a temporary standby unit 60 that can switch between atmospheric pressure and a vacuum atmosphere, and a substrate processing unit 70 that can perform substrate processing on the substrate W, both located inside a single container body 50. The vacuum atmosphere of the load lock module LLM is, for example, 10 -8 One suggestion is to set Torr to 10 Torr or less. 【0026】 <About the Load Lock Module LLM> The configuration of the load lock module LLM according to this embodiment will be described in detail below with reference to Figure 2. 【0027】 The container body 50 is formed as a box that is wide horizontally and flat vertically in order to accommodate a substrate W in a horizontal position. Inside the container body 50, there is an internal space 50s in which a temporary waiting section 60 and a substrate processing section 70 can be formed. In the side wall of the container body 50 adjacent to the atmospheric transport module LM, there is an opening 50o1 that communicates with the internal space 50s and allows the substrate W to pass through. In the side wall of the container body adjacent to the vacuum transport module TM, there is also an opening 50o2 that communicates with the internal space 50s and allows the substrate W to pass through. 【0028】 In the container body 50, the side walls above the openings 50o1 and 50o2 are formed as thin-walled upper side walls 501. In addition, the side walls below the openings 50o1 and 50o2 are formed as thick-walled lower side walls 502. 【0029】 As described above, a gate valve 52 is installed between the container body 50 and the transport container 40 of the atmospheric transport module LM. The gate valve 52 comprises a valve body 521 that can open and close the opening 50o1, and a drive mechanism 522 that can move the valve body 521 up and down vertically and move it closer to and further away from the opening 50o1. The valve body 521 is equipped with a sealing member 523 that contacts the side wall surrounding the opening 50o1 of the load lock module LLM and airtightly closes the opening 50o1. 【0030】 Furthermore, as described above, a gate valve 53 is installed between the container body 50 and the transport container 20 of the vacuum transport module TM. The gate valve 53 also includes a valve body 531 that can open and close the opening 50o2, and a drive mechanism 532 that can move the valve body 531 up and down vertically and move it closer to and further away from the opening 50o2. The valve body 531 includes a sealing member 533 that contacts the side wall surrounding the opening 50o2 of the load lock module LLM and hermetically closes the opening 50o2. 【0031】 The load lock module LLM is configured to have a temporary waiting section 60 formed on the vertically upper side of the container body 50 and a substrate processing section 70 formed on the vertically lower side of the container body 50. Specifically, the load lock module LLM includes a movable partition member 61 and a lifting mechanism 62 for raising and lowering the movable partition member 61. 【0032】 The movable partition member 61 is a plate that extends horizontally through the internal space 50s of the container body 50 and has a constant thickness in the vertical direction. In Figure 1, an example is shown in which the movable partition member 61 is formed in a perfect circle shape in plan view, but the shape of the movable partition member 61 is not limited to this, and may be other polygonal shapes such as circles or squares. 【0033】 The movable partition member 61 extends horizontally longer than the recessed space inside the lower side wall 502. Therefore, the movable partition member 61 has a lower surface on its outer circumference that faces the upper surface of the lower side wall 502. A sealing member 63 is provided on the lower surface of this outer circumference of the movable partition member 61, encircling the outer circumference. As the movable partition member 61 descends within the internal space 50s, it brings the sealing member 63 into contact with the upper surface of the lower side wall 502. As a result, the movable partition member 61 can divide the internal space 50s of the container body 50 vertically (see also Figure 3). 【0034】 The movable partition member 61 is preferably made of a material that does not release outgassing in a vacuum atmosphere, such as stainless steel or an aluminum alloy. Alternatively, the movable partition member 61 may be made of a material with high heat resistance, such as a low thermal expansion metal or a low thermal expansion alloy. This suppresses distortion of the movable partition member 61 even when affected by heat from the substrate processing unit 70, and allows the flatness of the upper and lower surfaces to be maintained well. 【0035】 Multiple lifting mechanisms 62 are provided on the ceiling of the container body 50 (for example, four at 90° intervals in the circumferential direction of the circular movable partition member 61). Each lifting mechanism 62 has a movable bar 621 that penetrates the ceiling of the container body 50 and extends vertically downward, and the movable partition member 61 is supported at the lower end of this movable bar 621. Each lifting mechanism 62 can be fitted with, for example, a ball screw mechanism, a cylinder mechanism, etc. 【0036】 Each lifting mechanism 62 is connected to the control device 90 for information communication and moves each movable bar 621 up and down as a whole based on the control of the control device 90. As a result, each lifting mechanism 62 can raise and lower the movable partition member 61 in the vertical direction while maintaining the horizontal position of the movable partition member 61. 【0037】 Each lifting mechanism 62 raises and lowers the movable partition member 61 between a lower limit position where the sealing member 63 of the movable partition member 61 contacts the upper surface of the lower side wall 502 and an upper limit position where the sealing member 63 is higher than the openings 50o1 and 50o2. This prevents the substrate W being transported into the container body 50 from the openings 50o1 and 50o2 from coming into contact with the movable partition member 61. 【0038】 As shown in Figure 3, the movable partition member 61 is lowered by the lifting mechanism 62 and positioned at the lower limit, thereby sealing the upper surface of the lower side wall 502 by the sealing member 63. As a result, the internal space 50s of the load lock module LLM is divided into upper and lower sections. Hereinafter, the upper space separated by the movable partition member 61 will be referred to as the internal pressure variable space 50s1, and the lower space separated by the movable partition member 61 will be referred to as the substrate processing space 50s2. 【0039】 The variable internal pressure space 50s1 is adjusted to an atmospheric pressure atmosphere when communicating with the atmospheric transport module LM by opening the gate valve 52, and to a vacuum atmosphere when communicating with the vacuum transport module TM by opening the gate valve 53. By passing through this variable internal pressure space 50s1, the substrate W can be transported between the atmospheric transport module LM and the vacuum transport module TM. 【0040】 On the other hand, the substrate processing space 50s2 is configured to maintain a vacuum atmosphere at all times during the operation of the semiconductor manufacturing system 1. Specifically, the load lock module LLM controls the substrate processing space 50s2 to communicate only with the vacuum transport module TM by linking the raising of the movable partition member 61 with the opening of the gate valve 53. 【0041】 Furthermore, the load lock module LLM is equipped with a pressure sensor 68 that measures the internal pressure of the variable internal pressure space 50s1. The pressure sensor 68 transmits pressure detection information to the control device 90 when reducing the pressure of the variable internal pressure space 50s1 or when returning the pressure of the variable internal pressure space 50s1 to atmospheric pressure. The load lock module LLM is also equipped with a pressure sensor 77 that measures the internal pressure of the substrate processing space 50s2. The pressure sensor 77 transmits pressure detection information to the control device 90 when processing the substrate W in the substrate processing space 50s2. 【0042】 Returning to Figure 2, the load lock module LLM is equipped with multiple (e.g., four) upper lift mechanisms 64 on the ceiling side of the container body 50. For example, each upper lift mechanism 64 is arranged inward adjacent to each lifting mechanism 62. This allows the movable bar 621 of the lifting mechanism 62 and the movable bar 641 of the upper lift mechanism 64 to be housed together in a bellows 622 at the ceiling of the container body 50. The bellows 622 separates the internal space 50s from the outside while retractably accommodating the movable bars 621 and 641. 【0043】 Each upper lift mechanism 64 includes a movable bar 641 that moves up and down vertically, and a support bar 642 that protrudes from the lower end of the movable bar 641 toward the center of the container body 50. The virtual circle formed by each movable bar 641 is larger than the diameter of the substrate W, while the virtual circle formed by the protruding ends of each support bar 642 is smaller than the diameter of the substrate W. By cooperating with each other, each support bar 642 can support the lower surface of the substrate W that has been transported by the air transport device 41 or the vacuum transport device 21. In addition, the movable partition member 61 has a groove on its upper surface into which each support bar 642 can enter when the upper lift mechanism 64 is lowered. Therefore, each support bar 642 can support the substrate W and then lower to place the substrate W on the upper surface of the movable partition member 61. 【0044】 Each upper lift mechanism 64 is connected to the control device 90 for information communication, and when a substrate W passes vertically above the movable partition member 61, the control device 90 controls its raising and lowering, thereby enabling the receiving and transfer of the substrate W. 【0045】 Furthermore, an upper gas exhaust section 65 is connected to the top of the container body 50 to draw in gas from the space above the movable partition member 61. In addition, an upper gas supply section 66 is connected to the top of the container body 50 to supply gas to the space above the movable partition member 61. The configuration of the upper gas exhaust section 65 and the upper gas supply section 66 will be described in detail later. 【0046】 Furthermore, the load lock module LLM may also have a cooling function for the movable partition member 61. Specifically, the movable partition member 61 has a flow path 61a inside. The load lock module LLM also includes a cooling module 67 that can cool the substrate W by circulating a refrigerant (for example, water) through the flow path 61a of the movable partition member 61. The flow path 61a of the movable partition member 61 is formed in a spiral, meandering, concentric, or the like along the planar direction (horizontal direction) of the movable partition member 61. 【0047】 The cooling module 67 includes a chiller 671 located outside the container body 50 that adjusts the temperature of the refrigerant and pumps the refrigerant under pressure. The chiller 671 is connected to a circulation path 672 outside the container body 50, which communicates with the flow path 61a of the movable partition member 61, for example, through the inside of the lifting mechanism 62. As a result, the cooling module 67 can circulate the refrigerant through the flow path 61a and lower the temperature of the entire movable partition member 61. 【0048】 The load lock module LLM forms a substrate processing section 70 capable of processing substrates W on the vertically lower side of the container body 50 by partitioning the space with the movable partition member 61 described above. This substrate processing section 70 includes a stage 71 that supports the substrates W and a lower lift mechanism 72 that receives and transfers the substrates W to and from the stage 71. 【0049】 In plan view, the stage 71 is formed in a perfectly circular shape, smaller than the movable partition member 61, and has a flat mounting surface on its upper surface on which the substrate W can be placed. Inside the stage 71, a heater 711 is provided to heat the substrate W placed on the mounting surface. 【0050】 The heater 711 is installed so as to extend parallel to the mounting surface of the stage 71. A heating wire, a sheet heater, or the like can be used for this heater 711. The heater 711 is electrically connected to a heating control module 73 located outside the container body 50. The heating control module 73 is connected to a control device 90 for information communication and heats the substrate W to a target temperature by controlling the power supplied to the heater 711 based on the control of the control device 90. The stage 71 may also be equipped with one or more temperature sensors (not shown) to detect the temperature of the substrate W (in-plane temperature distribution, etc.) using the temperature sensors when the substrate W is heated by the heater 711. Based on the detection information from these temperature sensors, the heating control module 73 can control the heating of the heater 711 so that the temperature of the substrate W reaches the target temperature. 【0051】 Multiple lower lift mechanisms (three or more) are provided at appropriate positions on the stage 71, and they move up and down based on the control of the control device 90 to receive and transfer the substrate W. The lower lift mechanisms 72 can also lift the substrate W and bring it close to the back surface of the movable partition member 61. 【0052】 Each lower lift mechanism 72 includes a lift pin 721 that actually supports the substrate W, and a drive mechanism that raises and lowers the lift pin 721. The lower lift mechanism 72 also includes a bellows 722 that surrounds the lift pin 721 and separates it from the outside. 【0053】 Furthermore, a lower gas exhaust section 75 is connected to the bottom of the container body 50 to draw in gas from the space below the movable partition member 61 (the recessed space surrounded by the lower side wall 502). In addition, a lower gas supply section 76 is connected to the bottom of the container body 50 to supply gas to the space below the movable partition member 61. 【0054】 The substrate processing unit 70 can perform heat treatment on the substrate W as a substrate treatment by operating the stage 71, the lower gas exhaust unit 75, and the lower gas supply unit 76. This heat treatment can be degassing, which removes unwanted components attached to the substrate W. For example, the substrate W, which has been transported from the atmospheric transport module LM and is not subjected to substrate treatment, may have moisture attached to it because it has been exposed to atmospheric pressure. In degassing, this moisture can be removed by heating the substrate W. Alternatively, the substrate treatment (heat treatment) performed by the substrate processing unit 70 is not limited to degassing, but may also be modification treatment, cleaning treatment, ashing treatment, etc., or it may simply be a treatment that preheats the substrate W. Furthermore, the substrate processing unit 70 may be configured to perform substrate treatment by supplying only gas without heating the substrate W. 【0055】 As shown in Figure 3, the upper gas exhaust section 65, upper gas supply section 66, lower gas exhaust section 75, and lower gas supply section 76 are provided on the outside of the container body 50. The upper gas exhaust section 65 reduces the pressure of the variable internal pressure space 50s1 to a vacuum by sucking out the gas from the variable internal pressure space 50s1 when the movable partition member 61 has descended and the variable internal pressure space 50s1 has been formed. On the other hand, the lower gas exhaust section 75 reduces the pressure of the substrate processing space 50s2 to a vacuum by sucking out the gas from the substrate processing space 50s2 when the movable partition member 61 has descended and the substrate processing space 50s2 has been formed. However, the upper gas exhaust section 65 and the lower gas exhaust section 75 may also perform the process of sucking out the gas from the entire internal space 50s to adjust it to a vacuum even when the movable partition member 61 has risen from the lower side wall 502. 【0056】 Specifically, the upper gas exhaust section 65 and the lower gas exhaust section 75 share the same turbomolecular pump 81 and dry pump 82. The turbomolecular pump 81 is used in a certain degree of vacuum atmosphere and is capable of precisely exhausting gas while maintaining a constant exhaust speed. The dry pump 82 applies appropriate suction pressure to the space to coarsely (largely) draw in gas, thereby reducing the pressure in the space and creating a vacuum atmosphere. The turbomolecular pump 81 and the dry pump 82 are connected via a main suction path 83, with the turbomolecular pump 81 positioned upstream of the dry pump 82. An on / off valve 811 is provided between the turbomolecular pump 81 and the dry pump 82. When the on / off valve 811 is open, gas flows through the turbomolecular pump 81, and when the on / off valve 811 is closed, the flow of gas is blocked. 【0057】 The upper gas exhaust section 65 has a first upper path 651 connected to the turbomolecular pump 81 and a second upper path 652 that bypasses the turbomolecular pump 81 and connects to the dry pump 82. The first upper path 651 is provided with an on / off valve 651v, while the second upper path 652 is provided with an on / off valve 652v. The upper gas exhaust section 65 switches between communication and disconnection between the variable internal pressure space 50s1 and the turbomolecular pump 81 and the dry pump 82, respectively, by opening and closing the on / off valves 651v and 652v. 【0058】 Similarly, the lower gas exhaust section 75 also has a first lower path 751 connected to the turbomolecular pump 81 and a second lower path 752 that bypasses the turbomolecular pump 81 and is connected to the dry pump 82. The first lower path 751 is provided with an on / off valve 751v, while the second lower path 752 is provided with an on / off valve 752v. The lower gas exhaust section 75 switches between communication and disconnection between the substrate processing space 50s2 and the turbomolecular pump 81 and the dry pump 82, respectively, by opening and closing the on / off valves 751v and 752v. 【0059】 Furthermore, the upper gas supply unit 66 supplies gas when increasing the pressure of the variable internal pressure space 50s1, which is currently in a vacuum atmosphere, to an atmospheric pressure atmosphere. For example, the upper gas supply unit 66 supplies nitrogen (N2) gas, which is an inert gas. The upper gas supply unit 66 is equipped with an upper gas supply path 661, and this upper gas supply path 661 is equipped with a gas source 662, an on / off valve 663, a flow regulator 664, etc. As a result, the upper gas supply unit 66 supplies nitrogen gas to the variable internal pressure space 50s1 by opening the on / off valve 663 to allow nitrogen gas to flow out from the gas source 662 and by adjusting the flow rate of nitrogen gas with the flow regulator 664. 【0060】 The lower gas supply unit 76 increases the ambient temperature of the substrate W being processed in the substrate processing space 50s2 by supplying a heat transfer gas to the substrate processing space 50s2, which is under a vacuum atmosphere. For example, the lower gas supply unit 76 supplies noble gases such as helium (He) gas and argon (Ar) gas, or hydrogen (H2) depending on the substrate processing content, as the heat transfer gas. The lower gas supply unit 76 is equipped with a lower gas supply path 761, and this lower gas supply path 761 is equipped with a gas source 762, an on / off valve 763, a flow rate regulator 764, etc. As a result, the lower gas supply unit 76 supplies heat transfer gas to the substrate processing space 50s2 by opening the on / off valve 763 to allow heat transfer gas to flow out from the gas source 762 and by adjusting the flow rate of nitrogen gas with the flow rate regulator 764. 【0061】 Furthermore, the lower gas supply unit 76 continues to supply heat transfer gas while maintaining a vacuum atmosphere during substrate processing in the substrate processing space 50s2. For this reason, the control device 90 monitors the detection information from the pressure sensor 77 and adjusts the pressure in the substrate processing space 50s2 by controlling the flow rate of the heat transfer gas with the flow rate regulator 764. 【0062】 Returning to Figure 1, the control device 90 is a computer having a processor 91, memory 92, input / output interfaces (not shown), and communication interfaces. The processor 91 is a combination of one or more of the following: CPU (Central Processing Unit), GPU (Graphics Processing Unit), ASIC (Application Specific Integrated Circuit), FPGA (Field-Programmable Gate Array), and circuits consisting of multiple discrete semiconductors. The memory 92 includes main memory and auxiliary memory. In other words, in this disclosure, the control device is an electronic circuit having a CPU, GPU, ASIC, FPGA, etc., and performs various control operations described in this specification by executing instruction codes stored in the memory 92 or by circuit design for special applications. 【0063】 <Regarding substrate processing methods> The semiconductor manufacturing system 1 according to this embodiment is basically configured as described above, and its operation (substrate processing method) will be explained below with reference to the flowchart in Figure 4. The control device 90 controls various configurations when performing the substrate processing method in the semiconductor manufacturing system 1 and sequentially executes steps S101 to S109 in Figure 4. In the following, an example will be described in which the substrate processing unit 70 of the load lock module LLM performs degassing as substrate processing. 【0064】 The semiconductor manufacturing system 1 first removes the substrate W from the storage container CS using the atmospheric transport device 41, and then loads the substrate W from the atmospheric transport module LM into the pressure-adjustable space 50s1 of the load lock module LLM (step S101). At this time, the load lock module LLM adjusts the pressure-adjustable space 50s1 to an atmospheric pressure atmosphere based on the control device 90, and then opens the gate valve 52. As a result, the pressure-adjustable space 50s1 and the space of the transport container 40 are connected under an atmospheric pressure atmosphere. 【0065】 Next, the semiconductor manufacturing system 1 uses a vacuum transfer device 21 to transfer the substrate W from the pressure-adjustable space 50s1 of the load lock module LLM to the vacuum transfer module TM (step S102). At this time, the load lock module LLM, based on the control of the control device 90, closes the gate valve 52, then reduces the pressure in the pressure-adjustable space 50s1 to create a vacuum atmosphere, and then opens the gate valve 53. As a result, the pressure-adjustable space 50s1 and the space of the transfer container 20 are connected under a vacuum atmosphere. 【0066】 Subsequently, the semiconductor manufacturing system 1 loads the substrate W from the vacuum transport module TM into the substrate processing space 50s2 of the load lock module LLM for degassing (step S103). The load lock module LLM raises the movable partition member 61 that was partitioning the internal space 50s, allowing the substrate W to be loaded onto the lower side of the movable partition member 61. Then, after the substrate W is placed on the stage 71, the load lock module LLM lowers the movable partition member 61 to hermetically close the substrate processing space 50s2. 【0067】 The semiconductor manufacturing system 1 performs a degassing process on the substrate W housed in the substrate processing space 50s2 (step S104). During the degassing process, the substrate W is heated to a target temperature by the heater 711, and a heat transfer gas is supplied to the substrate processing space 50s2. This allows for the smooth removal of moisture adhering to the substrate W. With the supply of this heat transfer gas, the substrate processing space 50s2 may be pressurized from a vacuum atmosphere, but it is basically adjusted to be maintained at a pressure lower than atmospheric pressure. This allows for the effective discharge of particles generated in the substrate processing space 50s2 during the degassing process. 【0068】 After degassing, the semiconductor manufacturing system 1 unloads the substrate W from the substrate processing space 50s2 of the load lock module LLM to the vacuum transport module TM (step S105). The load lock module LLM raises the movable partition member 61 that partitioned the internal space 50s again, allowing the substrate W to be unloaded from below the movable partition member 61. This allows the vacuum transport device 21 to enter and remove the substrate W. Alternatively, before step S105, as shown in step S110 (indicated by the dashed line), the substrate W may be lifted after degassing to bring it closer to the back surface of the movable partition member 61 and cool the substrate W. After the substrate W has cooled, the vacuum transport device 21 enters and removes the substrate W. 【0069】 Subsequently, the semiconductor manufacturing system 1 transports the substrate W using the vacuum transport device 21 and delivers the substrate W to the target processing module PM, where substrate processing is performed on the substrate W (step S106). Note that when transporting the substrate W in the vacuum transport module TM, the substrate W may also be transported through the pass module PSM and delivered to the target processing module PM. Furthermore, if substrate processing is to be performed on the substrate W in multiple processing modules PM, as described above, after substrate processing in one processing module PM, the vacuum transport device 21 transports the substrate W to the next processing module PM for further processing. 【0070】 After predetermined substrate processing, the semiconductor manufacturing system 1 uses a vacuum transfer device 21 to unload the substrate W from the processing module PM and loads the substrate W from the vacuum transfer module TM into the internal pressure variable space 50s1 of the load lock module LLM (step S107). 【0071】 Then, the semiconductor manufacturing system 1 places the substrate W, whose temperature has risen due to substrate processing, on the movable partition member 61 and cools the substrate W in the variable internal pressure space 50s1 using the cooling module 67 (step S108). The cooling module 67 can cool the substrate W by circulating a coolant from the chiller 671 to the flow path 61a of the movable partition member 61. 【0072】 Finally, the semiconductor manufacturing system 1 uses the atmospheric transport device 41 to transport the substrate W from the pressure-adjustable space 50s1 of the load lock module LLM to the atmospheric transport module LM, and then stores the processed substrate W in the storage container CS (step S109). 【0073】 <About the operation of the load lock module LLM> Next, the operation of the load lock module LLM in conjunction with the above substrate processing will be explained with reference to Figures 5(A) to 11. 【0074】 As shown in Figure 5(A), when transporting the substrate W from the atmospheric transport module LM to the load lock module LLM (step S101 in Figure 4), the movable partition member 61 is positioned at the lower limit, separating the internal pressure variable space 50s1 from the substrate processing space 50s2. That is, the load lock module LLM divides the internal space 50s of the container body 50 vertically by moving the movable partition member 61 to contact the lower side wall 502 of the container body 50. In this state, the load lock module LLM supplies nitrogen gas to the internal pressure variable space 50s1 via the upper gas supply unit 66 (see Figure 3) to create an atmospheric pressure atmosphere in the internal pressure variable space 50s1. 【0075】 After the variable internal pressure space 50s1 becomes atmospheric pressure, the gate valve 52 opens and the gate valve 53 remains closed, connecting the transport container 40 and the container body 50 of the atmospheric transport module LM. As a result, the atmospheric transport device 41 holding the substrate W enters the variable internal pressure space 50s1 and is positioned vertically above the movable partition member 61. 【0076】 As shown in Figure 5(B), when the upper lift mechanism 64 raises the movable bar 641, the substrate W is transferred from the atmospheric conveying device 41 to the support bar 642, and then the atmospheric conveying device 41 retracts from the internal pressure variable space 50s1. The load lock module LLM seals the internal pressure variable space 50s1 by closing the gate valve 53. Then, the load lock module LLM exhausts the gas from the internal pressure variable space 50s1 with the upper gas exhaust section 65, creating a vacuum atmosphere in the internal pressure variable space 50s1. 【0077】 As shown in Figure 6(A), after the variable internal pressure space 50s1 becomes a vacuum, the gate valve 53 opens and the gate valve 52 remains closed, thereby connecting the transport container 20 of the vacuum transport module TM with the container body 50. As a result, the vacuum transport device 21 enters the variable internal pressure space 50s1 and moves vertically downward to the substrate W, lowering the movable bar 641 of the upper lift mechanism 64, thereby transferring the substrate W to the vacuum transport device 21. 【0078】 As shown in Figure 6(B), the substrate W is temporarily transported from the load lock module LLM to the vacuum transport module TM by the vacuum transport device 21 (step S102 in Figure 4). When the substrate W moves to the vacuum transport module TM, the load lock module LLM temporarily closes the gate valve 53. However, the gate valve 53 may remain open because the substrate W is returned to the load lock module LLM as will be described later. 【0079】 Then, as shown in Figure 7(A), the load lock module LLM opens the upper part of the substrate processing space 50s2 by raising the movable partition member 61 using the lifting mechanism 62. Before raising the movable partition member 61, the substrate processing space 50s2 is in a vacuum state by drawing gas out through the lower gas exhaust section 75. In other words, the load lock module LLM performs the process of reducing the pressure of the substrate processing space 50s2 to create a vacuum atmosphere at an appropriate timing when the semiconductor manufacturing system 1 starts operation. 【0080】 Therefore, at the time the movable partition member 61 is raised by the lifting mechanism 62, the entire internal space 50s is adjusted to a vacuum atmosphere. As a result, when the gate valve 53 is opened, the load lock module LLM can communicate well with the vacuum atmosphere space of the vacuum transport module TM. The vacuum transport device 21 transports the substrate W from the vacuum transport module TM to the upper part of the substrate processing space 50s2 (step S103 in Figure 4). The load lock module LLM can receive the substrate W from the vacuum transport device 21 by raising the lift pins 721 of each lower lift mechanism 72. 【0081】 After receiving the substrate W, as shown in Figure 7(B), the vacuum transfer device 21 is retracted from the container body 50, and the container body 50 is closed by the gate valve 53. The load lock module LLM then lowers the lower lift mechanism 72 to place the substrate W on the mounting surface of the stage 71. Furthermore, the load lock module LLM lowers the movable partition member 61, and the sealing member 63 of the movable partition member 61 closes the lower side wall 502, sealing the substrate processing space 50s2. 【0082】 In this state, the load lock module LLM supplies power to the heater 711 of the stage 71 to heat the substrate W to a target temperature, thereby performing a degassing process to remove unwanted components from the substrate W (step S104 in Figure 4). During the degassing process, the lower gas supply unit 76 supplies a heat transfer gas (e.g., He gas) to the substrate processing space 50s2 to enhance heat transfer within the space and assist in heating the substrate W. The lower gas exhaust unit 75 also sucks the gas from the substrate processing space 50s2 to maintain the substrate processing space 50s2 at an appropriate pressure (vacuum atmosphere). 【0083】 As shown in Figure 8(A), the load lock module LLM can transport the substrate W through the variable internal pressure space 50s1 during the degassing process of the substrate W. For example, the load lock module LLM connects the variable internal pressure space 50s1 with the space of the transport container 20 by opening the gate valve 53 while keeping the gate valve 52 closed. This allows the load lock module LLM to load the vacuum transport device 21 holding the processed substrate W' into the variable internal pressure space 50s1 (step S107 in Figure 4). The upper lift mechanism 64 then raises the movable bar 641, allowing the support bar 642 to receive the substrate W. 【0084】 As shown in Figure 8(B), the load lock module LLM lowers the movable bar 641 of the upper lift mechanism 64 to place the processed substrate W' on the upper surface of the movable partition member 61. The load lock module LLM then cools the processed substrate W' by circulating a coolant in the flow path 61a via the cooling module 67 (step S108). This allows the load lock module LLM to smoothly lower the temperature of the processed substrate W', which has become hot after processing. During the cooling of the processed substrate W', nitrogen gas may be supplied from the upper gas supply unit 66 to increase the pressure of the variable internal pressure space 50s1 and create an atmospheric pressure atmosphere. 【0085】 Once the cooling of the substrate W is complete, as shown in Figure 9(A), the gate valve 52 is opened while the gate valve 53 remains closed, thereby connecting the transport container 40 of the atmospheric transport module LM with the container body 50. The upper lift mechanism 64 then raises the cooled and processed substrate W'. As a result, the atmospheric transport device 41 can receive the processed substrate W' after entering the variable internal pressure space 50s1, based on the upper lift mechanism 64 lowering the substrate W. 【0086】 Subsequently, as shown in Figure 9(B), the air transport device 41 holding the processed substrate W retracts from the internal pressure variable space 50s1 to the air transport module LM and transports the processed substrate W to the storage container CS (step S109 in Figure 4). The load lock module LLM seals the internal pressure variable space 50s1 by closing the gate valve 52. 【0087】 Furthermore, as shown in Figure 10(A), the substrate W may be transported again from the atmospheric transport module LM to the internal pressure variable space 50s1 of the load lock module LLM while the degassing process is being performed. However, the substrate W transported to the internal pressure variable space 50s1 will then undergo degassing. For this reason, the substrate W may be kept waiting in the upper lift mechanism 64 of the internal pressure variable space 50s1 until the degassing process of the previous substrate W in the substrate processing unit 70 is completed. During this waiting period, the load lock module LLM is depressurized to a vacuum atmosphere by exhausting the gas through the upper gas exhaust section 65. 【0088】 Then, when the degassing process is completed in the substrate processing unit 70, the load lock module LLM raises the movable partition member 61, as shown in Figure 10(B), to open the upper part of the substrate processing space 50s2. Furthermore, after the substrate W is raised by the lower lift mechanism 72, the semiconductor manufacturing system 1 moves the vacuum transfer device 21 from the vacuum transfer module TM into the load lock module LLM and lowers the substrate W, thereby transferring the substrate W to the vacuum transfer device 21. 【0089】 As shown in Figure 11, the load lock module LLM may also lift the substrate W with the lower lift mechanism 72 after degassing, bringing the substrate W closer to the back surface of the movable partition member 61. For example, the substrate W is positioned at a distance of 10 mm or less from the movable partition member 61 that closes the substrate processing space 50s2. At this time, the load lock module LLM circulates a coolant in the flow path 61a by the cooling module 67. As a result, the substrate W, which was heated during the degassing process, is cooled. After the substrate W has cooled, the semiconductor manufacturing system 1 moves the vacuum transfer device 21 into the load lock module LLM and lowers the substrate W, thereby transferring the substrate W to the vacuum transfer device 21. 【0090】 As a result, the vacuum transfer device 21 can transfer the substrate W from the substrate processing space 50s2 to the vacuum transfer module TM. The degassed substrate W can suppress the generation of particles in the vacuum transfer module TM and the processing module PM. 【0091】 Subsequently, the load lock module LLM lowers the movable partition member 61 and the upper lift mechanism 64 to the lower limit position. This allows the substrate W supported by the upper lift mechanism 64 to be received by the vacuum transport device 21. From here on, the same operation can be repeated by returning to Figure 6(A). Of course, if the degassing process is completed in a short time, the substrate W may be immediately removed from the substrate processing unit 70 depending on the completion timing. 【0092】 As described above, the semiconductor manufacturing system 1 according to this embodiment can perform degassing on the substrate W in the load lock module LLM, and then perform substrate processing in the processing module PM. Moreover, by providing a temporary waiting section 60 and a substrate processing section 70 in the upper and lower parts of the container body 50 of the load lock module LLM, it is possible to easily switch between a mode in which the substrate W is passed through and a mode in which substrate processing is performed on the substrate W, while suppressing the expansion of the footprint. 【0093】 It should be noted that the semiconductor manufacturing system 1 and substrate processing method described herein are not limited to the embodiments described above, and various modifications are possible. For example, the degassing (substrate processing) in the substrate processing unit 70 of the load lock module LLM is not limited to being performed before loading the substrate W into the processing module PM, but may also be performed on the processed substrate W' that has been processed in the processing module PM. 【0094】 Furthermore, the cooling module 67 provided in the container body 50 may be used not only to cool the substrate W, but also to dissipate heat from the movable partition member 61 whose temperature rises during the heat treatment of the substrate processing unit 70. For this reason, the cooling module 67 may be controlled to circulate the refrigerant through the flow path 61a throughout the substrate processing period. 【0095】 Furthermore, in the above embodiment, the load lock module LLM is configured to have a temporary standby unit 60 and a substrate processing unit 70 in the container body 50. However, the semiconductor manufacturing system 1 is not limited to the load lock module LLM, and other substrate standby modules may also be configured to have the temporary standby unit 60 and the substrate processing unit 70 arranged vertically. For example, such substrate standby modules include the pass module PSM and standby module STM shown in Figure 1. 【0096】 Furthermore, in this embodiment, the temporary standby unit 60 is installed on the upper side of the container body 50, while the substrate processing unit 70 is installed on the lower side of the container body 50. However, the technology of this disclosure is not limited to this configuration, and the substrate processing unit 70 may be installed on the upper side of the container body 50, while the temporary standby unit 60 is installed on the lower side of the container body 50. For example, when the substrate processing unit 70 is installed on the upper side of the container body 50, a heater 711 may be placed on the ceiling of the container body 50. Also, when the temporary standby unit 60 is installed on the lower side of the container body 50, a cooling module 67 including a flow path 61a may be placed on the floor (or stage) of the container body 50. 【0097】 <Note> The technical ideas and effects of this disclosure, as described in the embodiments above, are described below. 【0098】 A semiconductor manufacturing system (semiconductor manufacturing system 1) according to a first aspect of this disclosure includes a transport module (vacuum transport module TM, atmospheric transport module LM) for transporting substrates W, and a substrate waiting module (load lock module LLM) connected to the transport module for temporarily holding substrates W transported by the transport module. The substrate waiting module includes a container body 50 having an internal space 50s for housing the substrates W, and a gas exhaust section (upper gas exhaust section 65, lower gas exhaust section 75) capable of sucking gas from the internal space 50s to form a vacuum atmosphere. The substrate waiting module also includes a movable partition member 61 that is provided to be vertically movable in the internal space 50s and can partition the internal space 50s vertically by contacting the wall of the container body 50. Furthermore, the substrate waiting module includes a substrate processing section 70 for performing substrate processing on a substrate W housed in one of the two spaces (substrate processing space 50s2) partitioned by the movable partition member 61. 【0099】 As described above, the semiconductor manufacturing system 1 can temporarily hold a substrate W in a substrate waiting module connected to the transport module. This substrate waiting module is equipped with a substrate processing unit 70 that performs substrate processing in a space partitioned by a movable partition member 61, thereby enabling processing to be performed along the transport path of the substrate W. Moreover, since the substrate waiting module partitions the internal space 50s of the container body 50 vertically with the movable partition member 61, it is possible to suppress the expansion of the footprint by limiting the horizontal size of the device. 【0100】 Furthermore, the substrate processing unit 70 includes a substrate support unit (stage 71) that supports the substrate W, and a heater 711 that heats the substrate W supported by the substrate support unit, thereby performing heat treatment on the substrate W as part of the substrate processing. This makes it possible for the semiconductor manufacturing system to improve the overall processing efficiency of the system by performing heat treatment on the substrate W in the transport path of the substrate W. 【0101】 Furthermore, the substrate processing unit 70 includes a gas supply unit (lower gas supply unit 76) that supplies heat transfer gas to one of the spaces (substrate processing space 50s2) separated by the movable partition member 61. This enables the semiconductor manufacturing system 1 to heat the substrate W more stably during the heat treatment of the substrate W. 【0102】 Furthermore, the substrate processing unit 70 is a degassing process that removes unwanted components adhering to the substrate W. As a result, the semiconductor manufacturing system 1 can effectively remove unwanted components adhering to the substrate W either before or after substrate processing of the substrate W. 【0103】 Furthermore, in the other of the two spaces separated by the movable partition member 61 (the space for variable internal pressure 50s1), a component capable of cooling the transported substrate W is provided. This makes it possible for the semiconductor manufacturing system 1 to cool the substrate W, for example, when its temperature rises due to substrate processing. 【0104】 Furthermore, the transport module includes an atmospheric transport module LM that transports the substrate W in an atmospheric pressure atmosphere and a vacuum transport module TM that transports the substrate W in a vacuum atmosphere, and the substrate waiting module is a load lock module LLM that connects the atmospheric transport module LM and the vacuum transport module TM. This allows the semiconductor manufacturing system 1 to perform the operation of temporarily holding the substrate W in the load lock module LLM in order to pass through, and substrate processing on the substrate W. 【0105】 Furthermore, a vacuum atmosphere is always maintained in one of the spaces containing the substrate processing unit 70 (substrate processing space 50s2), and the other space of the two spaces separated by the movable partition member 61 (internal pressure variable space 50s1) can be switched between a vacuum atmosphere and an atmospheric pressure atmosphere, thereby transporting the substrate W between the atmospheric transport module LM and the vacuum transport module TM through the other space. As a result, the semiconductor manufacturing system 1 can transport the substrate W through the other space while suppressing particles and processing the substrate in the substrate processing unit 70. 【0106】 Furthermore, when processing substrates W transported from the atmospheric transport module LM in the substrate processing unit 70, the substrates W are transported from the atmospheric transport module LM to the vacuum transport module TM via the other space (internal pressure variable space 50s1), and then the substrates W are brought from the vacuum transport module TM to the substrate processing unit 70. This allows the semiconductor manufacturing system 1 to maintain a vacuum atmosphere in the substrate processing unit 70 at all times, thereby more reliably avoiding the generation of particles in the transport path. 【0107】 Furthermore, the substrate standby module (load lock module LLM) is provided in either the pass module PSM, which is connected to one vacuum transport module (first vacuum transport module TM1) that transports substrates in a vacuum atmosphere and allows the substrate W to pass to another vacuum transport module (second vacuum transport module TM2), or the standby module STM, which is connected to the vacuum transport module TM and temporarily holds the substrate W, or both. This allows the semiconductor manufacturing system 1 to perform processing while minimizing the increase in footprint of the pass module PSM and the standby module STM. 【0108】 Furthermore, the substrate waiting module according to the second aspect of this disclosure is connected to a transport module (vacuum transport module TM, atmospheric transport module LM) that transports substrates W, and temporarily holds substrates transported by the transport module. The substrate waiting module includes a container body 50 having an internal space 50s for housing the substrates W, and a gas exhaust section (upper gas exhaust section 65, lower gas exhaust section 75) capable of sucking gas from the internal space 50s to form a vacuum atmosphere. The substrate waiting module also includes a movable partition member 61 that is provided to be vertically movable within the internal space 50s and can partition the internal space 50s vertically by contacting the wall of the container body 50. In addition, the substrate waiting module includes a substrate processing section 70 that performs substrate processing on the substrates W housed in one of the two spaces (substrate processing space 50s2) partitioned by the movable partition member 61. Even in this case, the substrate waiting module can perform processing on the transport path of the substrates W while keeping the footprint expansion to a minimum. 【0109】 Furthermore, the semiconductor manufacturing system 1 according to a third aspect of this disclosure includes a transport module (vacuum transport module TM, atmospheric transport module LM) for transporting substrates W, and a substrate waiting module (load lock module LLM) connected to the transport module for temporarily holding substrates W transported by the transport module. The substrate processing method includes a step of dividing the internal space 50s of the container body 50 of the substrate waiting module into upper and lower sections by moving a movable partition member 61, which is provided to be vertically movable, to contact the wall of the container body 50. The substrate processing method also includes a step of creating a vacuum atmosphere by sucking gas from the internal space 50s partitioned by the movable partition member 61 using a gas exhaust section (upper gas exhaust section 65, lower gas exhaust section 75). Furthermore, the substrate processing method includes a step of performing substrate processing on the substrate W housed in one of the two spaces partitioned by the movable partition member 61. Even in this case, the substrate processing method can minimize the increase in footprint and enable processing to be performed along the transport path of the substrate W. 【0110】 The semiconductor manufacturing system 1, substrate standby module, and substrate processing method according to the embodiments disclosed herein are illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be configured in other ways and combined in a non-consistent manner. [Explanation of Symbols] 【0111】 1. Semiconductor manufacturing system 50 Container body 50s interior space 61 Movable partition member 65 Upper gas exhaust section 70. Circuit board processing unit 75 Lower gas exhaust section LM Atmospheric Conveying Module LLM Load Lock Module TM Vacuum Conveyor Module W board

Claims

[Claim 1] A transport module for transporting circuit boards, A semiconductor manufacturing system comprising: a substrate standby module connected to the transport module and for temporarily holding the substrates transported by the transport module, The aforementioned board standby module is A container body having an internal space for housing the aforementioned substrate, A gas exhaust unit capable of drawing gas from the internal space to form a vacuum atmosphere, A movable partition member is provided in the aforementioned internal space so as to be able to move up and down in the vertical direction, and which can divide the internal space vertically by contacting the wall of the container body, The system includes a substrate processing unit that performs substrate processing on the substrate housed in one of the two spaces separated by the movable partition member, Semiconductor manufacturing systems. [Claim 2] The aforementioned substrate processing unit is A substrate support portion that supports the aforementioned substrate, The system includes a heater for heating the substrate supported by the substrate support portion, and the substrate treatment involves applying heat treatment to the substrate. The semiconductor manufacturing system according to claim 1. [Claim 3] The substrate processing unit includes a gas supply unit that supplies heat transfer gas to one of the spaces partitioned by the movable partition member. The semiconductor manufacturing system according to claim 2. [Claim 4] The substrate processing unit is a degassing treatment that removes unwanted components adhering to the substrate. The semiconductor manufacturing system according to claim 2. [Claim 5] In the other of the two spaces separated by the movable partition member, a cooling component for the transported substrate is provided. A semiconductor manufacturing system according to any one of claims 1 to 4. [Claim 6] The transport module includes an atmospheric transport module for transporting the substrate in an atmospheric pressure atmosphere and a vacuum transport module for transporting the substrate in a vacuum atmosphere. The substrate standby module is a load lock module that connects the atmospheric transport module and the vacuum transport module. A semiconductor manufacturing system according to any one of claims 1 to 4. [Claim 7] A vacuum atmosphere is always maintained in the space having the substrate processing section. By making it possible to switch between a vacuum atmosphere and an atmospheric pressure atmosphere in the other of the two spaces separated by the movable partition member, the substrate is transported between the atmospheric transport module and the vacuum transport module through the other space. The semiconductor manufacturing system according to claim 6. [Claim 8] When the substrate transported from the atmospheric transport module is to be processed in the substrate processing unit, the substrate is transported from the atmospheric transport module to the vacuum transport module via the other space, and then the substrate is brought from the vacuum transport module to the substrate processing unit. The semiconductor manufacturing system according to claim 7. [Claim 9] The substrate standby module is provided in either a pass module connected to one vacuum transport module that transports the substrate in a vacuum atmosphere, allowing the substrate to pass through to another vacuum transport module, or a standby module connected to the vacuum transport module to temporarily hold the substrate, or both. A semiconductor manufacturing system according to any one of claims 1 to 4. [Claim 10] A substrate standby module connected to a transport module that transports substrates, which temporarily holds the substrates transported by the transport module, A container body having an internal space for housing the aforementioned substrate, A gas exhaust unit capable of drawing gas from the internal space to form a vacuum atmosphere, A movable partition member is provided in the aforementioned internal space so as to be able to move up and down in the vertical direction, and which can divide the internal space vertically by contacting the wall of the container body, The system includes a substrate processing unit that performs substrate processing on the substrate housed in one of the two spaces separated by the movable partition member, Circuit board standby module. [Claim 11] A transport module for transporting circuit boards, A substrate processing method for a semiconductor manufacturing system, comprising: a substrate waiting module connected to the transport module and for temporarily holding the substrates transported by the transport module, The process of dividing the internal space of the container body of the substrate standby module into upper and lower sections by moving a movable partition member, which is provided to be vertically movable, to contact the wall of the container body, in the internal space of the container body containing the substrate, The process involves creating a vacuum atmosphere in the internal space partitioned by the movable partition member by drawing in gas through a gas exhaust section, The process includes a step of performing substrate processing on the substrate housed in one of the two spaces separated by the movable partition member. Substrate processing method.

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