System and method for depositing high-density, high-tensile-stress films

Abstract

This invention provides a method for producing high-density, high-tensile-stress films at low temperatures using a chamber-based deposition process. [Solution] The semiconductor processing method includes flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen through a processing area of ​​a semiconductor processing chamber containing a substrate 305, forming a plasma of the silicon-containing precursor, nitrogen-containing precursor, and diatomic hydrogen at a frequency exceeding 15 MHz 310, and depositing a silicon nitride material onto the substrate 315.

Claims

1. In the method, A silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen are flowed through a processing area of ​​a semiconductor processing chamber, wherein a substrate is housed within the processing area of ​​the semiconductor processing chamber. The process involves forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen, wherein the plasma is formed at a frequency exceeding 15 MHz, and Depositing silicon nitride material onto the aforementioned substrate Methods that include...

2. The silicon nitride material is approximately 2.85 g / cm³ ３ The method according to claim 1, characterized by the above density.

3. The method according to claim 1, wherein the silicon nitride material is characterized by a stress of about 400 MPa or more.

4. The method according to claim 1, wherein the silicon nitride material is characterized by having a refractive index of about 1.75 or higher.

5. The method according to claim 1, wherein the silicon nitride material contains about 10% or less hydrogen.

6. The method according to claim 1, wherein approximately 100 sccm or more of the diatomic hydrogen flows into the processing region of the semiconductor processing chamber.

7. The method according to claim 6, wherein approximately 5,000 sccm or less of diatomic hydrogen flows into the processing area of ​​the semiconductor processing chamber.

8. The method according to claim 1, wherein the plasma is formed at a temperature of approximately 550°C or lower.

9. The method according to claim 1, wherein the frequency is approximately 27 MHz or higher.

10. In the method, A silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen are flowed through a processing area of ​​a semiconductor processing chamber, wherein a substrate is housed within the processing area of ​​the semiconductor processing chamber. Forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen, wherein the plasma does not contain any material having nitrogen-hydrogen bonds, and Depositing silicon nitride material onto the aforementioned substrate Includes, The silicon nitride material is approximately 2.85 g / cm³ ３ The above densities are characterized, and The silicon nitride material is characterized by a stress of approximately 400 MPa or more. method.

11. The method according to claim 10, wherein the silicon nitride material is characterized by having a refractive index of about 1.75 or higher.

12. The method according to claim 10, wherein the silicon nitride material contains about 10% or less hydrogen.

13. The method according to claim 10, wherein approximately 100 sccm or more of the diatomic hydrogen flows into the processing area of ​​the semiconductor processing chamber.

14. The method according to claim 13, wherein approximately 5,000 sccm or less of diatomic hydrogen flows into the processing area of ​​the semiconductor processing chamber.

15. The method according to claim 10, wherein the plasma is formed at a temperature of approximately 550°C or lower.

16. The method according to claim 10, wherein the plasma is formed at a frequency exceeding 15 MHz.

17. The method according to claim 16, wherein the frequency is approximately 27 MHz or higher.

18. In the method, A silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen are flowed through a processing area of ​​a semiconductor processing chamber, wherein a substrate is housed within the processing area of ​​the semiconductor processing chamber. Forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen, and Depositing silicon nitride material onto the aforementioned substrate Includes, Approximately 100 sccm or more of the diatomic hydrogen flows into the processing area of ​​the semiconductor processing chamber, Approximately 5000 sccm or less of the diatomic hydrogen flows into the processing area of ​​the semiconductor processing chamber. method.

19. The silicon nitride material is approximately 2.85 g / cm³ ３ The method according to claim 18, characterized by the above density.

20. The method according to claim 18, wherein the silicon nitride material is characterized by a stress of about 400 MPa or more.

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