Metal film deposition

Abstract

This specification provides low-resistance metallization stack structures and related manufacturing methods for logic and memory applications. In some embodiments, a thin metal oxynitride or metal nitride nucleation layer is deposited, followed by the deposition of a pure metal conductor. The nucleation layer is amorphous and serves as a template for large pure metal film grain growth and low resistivity. Furthermore, certain embodiments of the methods described later convert almost all or all of the metal oxynitride nucleation layer into a pure metal layer, further reducing resistivity.

Claims

1. It is a method, A process of depositing a first layer from a metal chloride precursor and ammonia using first atomic layer deposition (ALD) treatment, A step of depositing an elemental metal layer onto the first layer from a metal chloride precursor and hydrogen using a second ALD treatment, A method that includes [a certain feature].

2. A method according to claim 1, wherein the first layer is a metal oxynitride layer or a metal nitride layer.

3. A method according to claim 2, wherein the first layer is converted into an elemental metal layer during or before the second ALD treatment.

4. A method according to claim 3, wherein the converted elemental metal layer contains less than 1 (atomic) percent of impurities.

5. A method according to claim 1, wherein the first layer is an amorphous layer.

6. A method according to claim 5, wherein the element layer is crystalline.

7. A method according to claim 1, wherein the first and second ALD treatments are performed in the same chamber without exposure to air.

8. A method according to claim 1, wherein the first layer is a template for growing metal particles in the second layer.

9. A method according to claim 1, wherein the element layer contains less than 1 (atomic) percent of impurities.

10. A method according to claim 1, wherein the elemental metal layer is elemental tungsten.

11. A method according to claim 1, wherein the elemental metal layer is elemental molybdenum.

12. A method according to claim 1, wherein the first layer is molybdenum oxynitride and molybdenum nitride.

13. A method according to claim 1, wherein the first ALD treatment is performed at a temperature lower than 400°C.

14. A method according to claim 13, wherein the second ALD treatment is performed at a temperature higher than 400°C.

15. A method according to claim 1, wherein the deposition of the first layer and the deposition of the elemental layer are performed in the same chamber.

16. A method according to claim 15, wherein the deposition of the first layer and the deposition of the elemental layer are performed in different stations of the same chamber.

17. A method according to claim 1, wherein the deposition of the first layer is carried out in a first chamber and the deposition of the elemental layer is carried out in a second chamber.

18. A method according to claim 1, further comprising the step of exposing the first layer to air before the deposition of the elemental layer.

19. It is a device, First and second processing chambers, each configured to accommodate a substrate, A substrate support in each of the processing chambers, A gas inlet configured to direct the gas into each of the aforementioned processing chambers, A heater configured to heat the substrate support in each processing chamber, It is a controller, (a) A program instruction to sequentially introduce a metal acid chloride precursor and ammonia into the first processing chamber while the substrate is housed in the first processing chamber. (b) After (a), a program instruction for transferring the substrate to the second processing chamber, and A controller comprising program instructions for sequentially introducing a metal chloride precursor and hydrogen into the second processing chamber while the substrate is housed in the second processing chamber, following (c) and (b), A device equipped with the following features.

20. It is a device, A processing chamber having one or more stations, each configured to accommodate a substrate, A substrate support in each of the one or more stations, A gas inlet configured to direct the gas into each of the one or more stations, A heater configured to heat the substrate support within each station, It is a controller, A program instruction for sequentially introducing a metal chloride precursor and ammonia into one of the one or more stations, A controller comprising program instructions for sequentially introducing a metal chloride precursor and hydrogen into one of the one or more stations, A device equipped with the following features.

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