Injection device, substrate processing device, substrate processing method, semiconductor device manufacturing method and program

Abstract

The present invention provides an injection device and a substrate processing device that increase the flow area of ​​gas. [Solution] In the substrate processing apparatus 1, the reaction tube 5 includes a first nozzle 22 and a second nozzle that extend perpendicular to the main surface of the substrate, facing the end face of the substrate 9. Each of the first and second nozzles includes a front surface continuously formed on the side facing the substrate, and a plurality of injection holes arranged on the front surface in a direction parallel to the main surface of the substrate, for injecting gas into the substrate. When the direction from the center of the arrangement of the first and second nozzles toward the center of the substrate is taken as the reference direction, the front surface is formed such that the angle of each normal of the front surface at the position where the plurality of injection holes are arranged increases with respect to the reference direction in the order of the arrangement of the plurality of injection holes. Of the plurality of injection holes of the first and second nozzles, the injection hole closest to the other nozzle of either the first or second nozzle is formed on substantially the same tangent plane and injects gas substantially parallel to each other.

Description

Technical Field

[0001] The present disclosure relates to an injection device, a substrate processing device, a substrate processing method, a method for manufacturing a semiconductor device, and a program.

Background Art

[0002] In a method for manufacturing a semiconductor device, as an example of a device for forming an oxide film or a metal film on a substrate, a vertical substrate processing device is known. In a vertical substrate processing device, a boat as a substrate holder for holding wafers in multiple stages is provided in a processing chamber, and while a plurality of substrates are held by the boat, a processing gas is supplied to the substrates and the substrates are processed.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the conventional technology, since the processing gas is supplied toward the center of the wafer, the flow path area of the processing gas becomes small, and depending on the processing, the flow of the processing gas in the processing chamber may not be sufficiently controlled.

[0005] The present disclosure provides a technology capable of expanding the flow path area of a gas.

Means for Solving the Problems

[0006] According to one aspect of the present disclosure, a first nozzle and a second nozzle are provided, each facing the end face of a substrate and extending perpendicularly to the main surface of the substrate, each of the first nozzle and the second nozzle having a front surface continuously formed on the side facing the substrate, and a plurality of injection holes arranged on the front surface in a direction parallel to the main surface of the substrate for injecting gas into the substrate, wherein, when the direction from the center of the arrangement of the first nozzle and the second nozzle toward the center of the substrate is taken as the reference direction, the front surface is formed such that the angle of each normal of the front surface at the position where the plurality of injection holes are arranged increases with respect to the reference direction in the order of the arrangement of the plurality of injection holes, and among the plurality of injection holes of the first nozzle and the second nozzle, the injection hole closest to the other nozzle of the first nozzle or the second nozzle is formed on substantially the same tangent plane, and a technology is provided for injecting gas substantially parallel to each other. [Effects of the Invention]

[0007] According to this disclosure, it is possible to increase the flow path area of ​​the nozzle and suppress backflow. [Brief explanation of the drawing]

[0008] [Figure 1] This is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present disclosure. [Figure 2] This is a view from the direction of arrow AA in Figure 1. [Figure 3] This is a view from the arrow BB in Figure 2. [Figure 4] This is an enlarged cross-sectional view showing the main parts of a substrate processing apparatus according to an embodiment of the present disclosure. [Figure 5] This is a perspective view showing an injection device according to an embodiment of the present disclosure. [Figure 6] This is a block diagram illustrating the control system of the control unit of a substrate processing apparatus according to an embodiment of the present disclosure. [Figure 7] This is a flowchart illustrating the substrate processing steps according to the embodiments of this disclosure. [Figure 8] This is an enlarged plan cross-sectional view showing the main part of a substrate processing apparatus according to a modified embodiment of the present disclosure. [Figure 9] This is a perspective view showing a modified injection device according to an embodiment of the present disclosure. [Figure 10] This shows the in-plane flow velocity distribution when a nozzle according to a modified embodiment of the present disclosure is provided. [Modes for carrying out the invention]

[0009] The embodiments of this disclosure will be described below with reference to the drawings.

[0010] The following description will explain one aspect of this disclosure, primarily with reference to Figures 1 to 10. It should be noted that the drawings used in the following description are schematic, and the dimensional relationships and proportions of the elements shown in the drawings do not necessarily correspond to those of reality. Furthermore, the dimensional relationships and proportions of the elements do not necessarily correspond between multiple drawings.

[0011] Furthermore, unless otherwise specified in the specification, each element is not limited to one, but may exist in multiple forms. In addition, substantially identical elements in the drawings are denoted by the same reference numeral, and redundant explanations in the specification are omitted.

[0012] Furthermore, the term "wafer" as used in this specification may refer to the wafer itself or to a laminate of a wafer and a predetermined layer or film formed on its surface. The term "surface of the wafer" as used in this specification may refer to the surface of the wafer itself or to the surface of a predetermined layer formed on the wafer. When it is stated in this specification that "a predetermined layer is formed on the wafer," it may refer to directly forming the predetermined layer on the surface of the wafer itself or to forming the predetermined layer on top of a layer already formed on the wafer. The term "substrate" as used in this specification has the same meaning as the term "wafer."

[0013] Furthermore, the term "agent" used in this specification includes at least one of gaseous substances and liquid substances. The liquid substance includes mist substances. That is, the film-forming agent, the modifying agent, and the etching agent may contain a gaseous substance, may contain a liquid substance such as a mist substance, or may contain both of them.

[0014] In addition, the notation of a numerical range such as "1 - 2000 Pa" in this specification means that the lower limit value and the upper limit value are included in that range. Therefore, for example, "1 - 2000 Pa" means "1 Pa or more and 2000 Pa or less". The same applies to other numerical ranges. Also, when "0" is included in a numerical value, "0" means a state in which a substance such as the gas is not supplied. For example, when 0 slm is included in the supply flow rate of the gas, 0 slm means a state in which the gas is not supplied. This also applies to other substances in the following explanations.

[0015] <Overall Configuration of Substrate Processing Apparatus> First, the overall configuration of the substrate processing apparatus 1 according to this embodiment will be described with reference to FIGS. 1 to 6. Note that the vertical direction H of the apparatus indicates the vertical direction, the width direction W of the apparatus indicates the horizontal direction, and the depth direction D of the apparatus indicates the horizontal direction.

[0016] As shown in FIG. 1, the substrate processing apparatus 1 includes a control unit 2 that controls each part and a processing furnace 3. The processing furnace 3 has a heater 4 that is a heating unit. The heater 4 has a cylindrical shape and is installed in the vertical direction of the apparatus by being supported by a heater base (not shown). The heater 4 also functions as an activation mechanism for activating the processing gas with heat. Note that the details of the control unit 2 will be described later.

[0017] Inside the heater 4, a reaction tube 5 that forms a processing container for accommodating a substrate is vertically arranged concentrically with the heater 4. The reaction tube 5 is formed of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC). The substrate processing apparatus 1 is a so-called hot-wall type.

[0018] As shown in Figure 2, the reaction tube 5 has a cylindrical inner tube 6 and a cylindrical outer tube 7 that surrounds the inner tube 6. That is, the outer tube 7 together with the inner tube 6 constitutes the reaction tube 5. By surrounding the inner tube 6, the outer tube 7 forms a gap between itself and the cylindrical part, which serves as an exhaust space S. The inner tube 6 is arranged concentrically with the outer tube 7. The inner tube 6 is an example of a pipe member.

[0019] The inner tube 6 has a covered upper section and side walls that serve as cylindrical sections for housing multiple substrates inside. Specifically, as shown in Figure 1, the inner tube 6 itself is formed in a closed-end shape with an open lower end and a flat wall at the upper end. Similarly, the outer tube 7 is also formed in a closed-end shape with an open lower end and a flat wall at the upper end. Furthermore, in the exhaust space S formed between the inner tube 6 and the outer tube 7, a supply buffer 8 serving as a nozzle chamber is formed, as shown in Figure 2. Details of the supply buffer 8 will be described later.

[0020] As shown in Figure 1, a processing chamber 11 is formed inside the inner tube 6, concentrically positioned with the wafer 9, which serves as the substrate, for processing the wafer 9. This processing chamber 11 can also accommodate a boat 12, which is an example of a substrate holder capable of holding the wafer 9 aligned horizontally and in a multi-tiered vertical arrangement. The inner tube 6 surrounds the contained wafer 9. Multiple wafers 9 are arranged inside the cylindrical portion of the inner tube 6, along the axis of the cylindrical portion. Further details about the inner tube 6 will be described later.

[0021] The lower end of the reaction tube 5 is supported by a cylindrical manifold 13. The manifold 13 is made of a metal such as nickel alloy or stainless steel, or a heat-resistant material such as SiO2 or SiC. A flange is formed at the upper end of the manifold 13, and the lower end of the outer tube 7 is placed on this flange. An airtight member 14, such as an O-ring, is placed between this flange and the lower end of the outer tube 7, making the inside of the reaction tube 5 airtight.

[0022] A seal cap 15 is airtightly attached to the opening at the lower end of the manifold 13 via an airtight member 16 such as an O-ring, thereby airtightly sealing the opening at the lower end of the reaction tube 5, i.e., the opening of the manifold 13. The seal cap 15 is made of a metal such as nickel alloy or stainless steel and is formed in a disc shape. The seal cap 15 may also be configured to cover its outside with a heat-resistant material such as SiO2 or SiC.

[0023] A boat support base 17 is provided on the seal cap 15 to support the boat 12. The boat support base 17 is made of a heat-resistant material such as SiO2 or SiC and functions as an insulating part.

[0024] The boat 12 is erected on a boat support base 17. The boat 12 is made of a heat-resistant material such as SiO2 or SiC. As shown in Figure 1, the boat 12 has a bottom plate (not shown) fixed to the boat support base 17 and a top plate positioned above it, with a number of support columns 12a installed between the bottom plate and the top plate.

[0025] Boat 12 holds multiple wafers 9 to be processed in the processing chamber 11 inside the inner tube 6. As shown in Figure 1, the multiple wafers 9 are supported by the pillars 12a of boat 12, maintaining a horizontal orientation with a certain distance between them and with their centers aligned. The loading direction of the multiple wafers 9 is the axial direction of the reaction tube 5. In other words, the centers of the wafers 9 are aligned with the central axis of boat 12, and the central axis of boat 12 coincides with the central axis of reaction tube 5.

[0026] A rotating mechanism 18 for rotating the boat is provided on the underside of the seal cap 15. The rotating shaft 19 of the rotating mechanism 18 passes through the seal cap 15 and is connected to the boat support base 17, and the rotating mechanism 18 rotates the boat 12 via the boat support base 17, thereby rotating the wafer 9.

[0027] The seal cap 15 is raised and lowered vertically by an elevator 21, which is a lifting mechanism located outside the reaction tube 5, allowing the boat 12 to be moved in and out of the processing chamber 11.

[0028] The manifold 13 is equipped with multiple nozzle support sections that extend through the manifold 13 to support nozzles 22 (as a first nozzle), 23 (as a second nozzle), 24 (as a third nozzle), 25 (as a fourth nozzle), 26 (as a fifth nozzle), and 27 (as a sixth nozzle) which supply gas into the processing chamber 11. In this embodiment, a nozzle support section is provided to support each nozzle. In Figure 1, only nozzle 22, the first nozzle support section 28, and the second nozzle support section 29 are shown as examples. The nozzle support sections are made of materials such as nickel alloy or stainless steel. Each nozzle 22-27 faces the end face (i.e., the side face when the main surface is facing upwards, also called the edge) of the wafer 9 held in the boat 12, and extends in a direction perpendicular to the main surface of the wafer 9.

[0029] Gas supply pipes 31, 32, 33, 34, 35, and 36, which supply gas to the processing chamber 11, are connected to one end of the nozzle support section. Nozzles 22, 23, 24, 25, 26, and 27 are connected to the other end of the nozzle support section. Furthermore, gas supply pipe 37 is connected to gas supply pipe 31, gas supply pipe 38 is connected to gas supply pipe 32, gas supply pipe 39 is connected to gas supply pipe 33, and gas supply pipe 41 is connected to gas supply pipe 35. Each nozzle 22-27 is made of a heat-resistant material such as SiO2 or SiC. Details of each nozzle 22-27 will be described later.

[0030] (Gas supply pipe) Gas supply pipes 31 and 37 are connected to the end (lower end) of nozzle 22 via the first nozzle support section 28, and are in fluid communication. Gas supply pipes 32 and 38 are connected to the end (lower end) of nozzle 23 via the second nozzle support section 29, and are in fluid communication. Gas supply pipes 33 and 39 are in communication with nozzle 24 via the nozzle support section.

[0031] Furthermore, the gas supply pipe 34 is in communication with the nozzle 25 via the nozzle support section. The gas supply pipes 35 and 41 are in communication with the nozzle 26 via the nozzle support section. The gas supply pipe 36 is in communication with the nozzle 27 via the nozzle support section.

[0032] The gas supply pipe 31 is equipped with, in order from upstream in the direction of gas flow, a raw material gas supply source 42 for supplying the first raw material gas as a process gas, a mass flow controller (MFC) 43 which is an example of a flow control device, and a valve 44, a tank 45, and a valve 46 which are on / off valves. The gas supply pipe 32 is also equipped with, in order from upstream in the direction of gas flow, a raw material gas supply source 47 for supplying the first raw material gas as a process gas, an MFC 48, a valve 49, a tank 51, and a valve 52.

[0033] MFC43 and MFC48 are a pair of flow controllers of the present disclosure that supply gas to each of a pair of tanks at a set flow rate set to form a reference storage amount as a target amount of gas. Valve 46 is an on-off valve that controls the fluid communication of gas between nozzle 22 and tank 45, and valve 52 is an on-off valve that controls the fluid communication of gas between nozzle 23 and tank 51, and are a pair of on-off valves of the present disclosure.

[0034] Furthermore, in a state where the gas flow rate cannot be limited to the set flow rate, the control valves (not shown) inside MFC43,48 will be fully open or fully closed. This is also called a saturated state or an uncontrollable state. In this disclosure, in a state where the gas flow rate cannot be limited to the set flow rate, the internal control valves may be fully open or fully closed, or they may be positioned between fully open and fully closed.

[0035] Each of the MFC43 and 48, although not shown in the diagram, has an orifice and a control valve that controls the gas pressure on the primary side of the orifice. Both MFC43 and 48 control the gas flow rate by utilizing the choke flow of the orifice.

[0036] Tanks 45 and 51 are configured to store the first raw material gas separately, so that the first raw material gas supplied from raw material gas sources 42 and 47 does not mix with the carrier gas.

[0037] Furthermore, corresponding pressure sensors 50a and 50b are provided on the upstream side of each of the tanks 45 and 51. The pressure sensors 50a and 50b are a pair of pressure gauges according to this disclosure that measure the internal pressure of each of the tanks 45 and 51 while the gas is being stored.

[0038] The gas supply pipe 33 is equipped with, in order from upstream, a raw material gas supply source 53, an MFC 54, and a valve 55, which supply the second raw material gas as a process gas. The gas supply pipe 34 is equipped with, in order from upstream, an assist gas supply source 56, an MFC 57, and a valve 58, which supply the assist gas as a process gas. The second raw material gas is also used as a reaction gas, and the assist gas is a different type of gas from both the first and second raw material gases.

[0039] The gas supply pipe 35 is equipped with, in order from the upstream direction, a raw material gas supply source 59, an MFC 61, and a valve 62, which supply the second raw material gas as the processing gas. The gas supply pipe 36 is equipped with, in order from the upstream direction, an assist gas supply source 63, an MFC 64, and a valve 65, which supply the assist gas as the processing gas.

[0040] Downstream of valve 46 in gas supply pipe 31, gas supply pipe 37 is connected to supply inert gas. Gas supply pipe 37 is equipped with, in order from upstream, an inert gas supply source 66, an MFC 67, and a valve 68, which supply inert gas as a process gas. Downstream of valve 52 in gas supply pipe 32, gas supply pipe 38 is connected to supply inert gas. Gas supply pipe 38 is equipped with, in order from upstream, an inert gas supply source 69, an MFC 71, and a valve 72, which supply inert gas as a process gas.

[0041] Furthermore, a gas supply pipe 39 for supplying inert gas is connected downstream of valve 55 in gas supply pipe 33. Gas supply pipe 39 is equipped with, in order from upstream, an inert gas supply source 73, an MFC 74, and a valve 75 for supplying inert gas as a processing gas. A gas supply pipe 41 for supplying inert gas is connected downstream of valve 62 in gas supply pipe 35. Gas supply pipe 41 is equipped with, in order from upstream, an inert gas supply source 76, an MFC 77, and a valve 78 for supplying inert gas as a processing gas. Note that the assist gas supply sources 56, 63 and the inert gas supply sources 66, 69, 73, and 76 are connected to a common supply source.

[0042] (Supply system to nozzle 22) The first raw material gas supply system for supplying the first raw material gas to the nozzle 22 mainly consists of gas supply pipe 31, gas supply pipe 37, MFC 43, MFC 67, tank 45, valve 44, valve 46, and valve 68. A raw material gas supply source 42 and an inert gas supply source 66 may also be included in the above first raw material gas supply system.

[0043] (Supply system to nozzle 23) The first raw material gas supply system for supplying the first raw material gas to the nozzle 23 mainly consists of gas supply pipe 32, gas supply pipe 38, MFC 48, MFC 71, tank 51, valve 49, valve 52, and valve 72. A raw material gas supply source 47 and an inert gas supply source 69 may also be included in the above first raw material gas supply system.

[0044] (Supply system to nozzle 24) The second raw material gas supply system for supplying the second raw material gas to the nozzle 24 mainly consists of gas supply pipe 33, gas supply pipe 39, MFC 54, MFC 74, valve 55, and valve 75. A raw material gas supply source 53 and an inert gas supply source 73 may also be included in the above second raw material gas supply system.

[0045] (Supply system to nozzle 25) The assist gas supply system is mainly comprised of the gas supply pipe 34, MFC 57, and valve 58, which supply only the upper dummy region of the two side dummy regions described later. The assist gas supply source 56 may also be included in the assist gas supply system.

[0046] (Supply system to nozzle 26) The second raw material gas supply system for supplying the second raw material gas to the nozzle 26 mainly consists of gas supply pipe 35, gas supply pipe 41, MFC 61, MFC 77, valve 62, and valve 78. A raw material gas supply source 59 and an inert gas supply source 76 may also be included in the above second raw material gas supply system.

[0047] (Supply system to nozzle 27) The assist gas supply system is mainly comprised of the gas supply pipe 36, MFC 64, and valve 65, which supply only the lower dummy region of the two side dummy regions. An assist gas supply source 63 may also be included in the assist gas supply system.

[0048] (tank) Tanks 45 and 51 have the same volume and can store the raw material gas separately so that it does not mix with the carrier gas. Tanks 45 and 51 supply the stored raw material gas to nozzles 22 and 23 in a pulsed manner almost simultaneously through on-off valves. Tanks 45 and 51 are a pair of tanks of this disclosure. Depending on the vapor pressure of the raw material gas, the internal pressure of tanks 45 and 51 is usually below atmospheric pressure. Tanks 45 and 51 can be isothermal tanks in which metal wool or filaments are loaded inside and heated by an electric heater.

[0049] In other words, in this embodiment, a high-concentration flash supply of raw material gas can be performed. In flash supply, the raw material gas stored in tanks 45 and 51 is supplied from tanks 45 and 51 to the reaction tube 5 via nozzles 22 and 23 in a large flow rate in a short time. Such a large flow rate of gas using tanks is also called "flash flow". During the film deposition process, the flash flow raw material gas spreads to the surface of the wafer 9 inside the cylindrical part of the inner tube 6 with a low degree of resolution.

[0050] Furthermore, flash feeding exposes the entire surface of the wafer 9 to a high-partial-pressure source gas during the film deposition process. This temporary increase in pressure is one of the most effective ways to promote the intrusion of gas into microstructures such as trenches and holes formed on the surface of the wafer 9, and is particularly useful in processing patterned wafers with high aspect ratios.

[0051] Furthermore, this disclosure is not limited to the flash supply of raw material gases, but may also be applied to high-flow supply using general MFCs such as inert gases as purge gases.

[0052] (Exhaust system) The outer tube 7 of the reaction tube 5 has a main exhaust port 79. The main exhaust port 79 is formed below the exhaust port 81 of the inner tube 6. The inner tube 6 of the reaction tube 5 has a main exhaust slit 82 which serves as an exhaust section. That is, the reaction tube 5 has a main exhaust slit 82 on its side.

[0053] As shown in Figure 2, the main exhaust port 79 is positioned so as to be aligned with the main exhaust slit 82 in a plan view. As shown in Figure 2, each of the pair of secondary exhaust slits 83a and 83b is positioned so as to be aligned with the main exhaust slit 82 in a plan view. The secondary exhaust slits 83a and 83b correspond to the secondary exhaust section.

[0054] The main exhaust port 79 connects the exhaust space S to the outside of the reaction tube 5. The main exhaust port 79 corresponds to the exhaust port of this disclosure. An exhaust duct 84 for sending the raw material gas to the outside is connected to the main exhaust port 79.

[0055] The exhaust duct 84 is connected to a vacuum pump 88, which acts as an exhaust device, via a pressure sensor 86 that detects the pressure inside the processing chamber 11 and an APC (Auto Pressure Controller) valve 87 that acts as a pressure regulator. The exhaust duct 84 downstream of the vacuum pump 88 is connected to an exhaust gas treatment device, etc. (not shown). This configuration allows for vacuum evacuation of the processing chamber 11 so that the pressure inside the chamber reaches a predetermined pressure (i.e., a vacuum) by controlling the output of the vacuum pump 88 and the opening degree of the APC valve 87.

[0056] The main exhaust system is mainly composed of an exhaust duct 84, an APC valve 87, and a pressure sensor 86. A vacuum pump 88 may also be included in the exhaust system.

[0057] Furthermore, a temperature sensor (not shown) is installed inside the reaction tube 5 to act as a temperature detector. Based on the temperature information detected by the temperature sensor, the power supplied to the heater 4 is adjusted so that the temperature inside the processing chamber 11 reaches the desired temperature distribution.

[0058] In this configuration, in the processing furnace 3, a boat 12 stacking multiple wafers 9 to be batched is brought into the processing chamber 11 by a boat support 17. The wafers 9 brought into the processing chamber 11 are then heated to a predetermined temperature by a heater 4. A device having such a processing furnace is called a vertical batch device. The multiple wafers 9 housed in the processing chamber 11 can be broadly classified into product wafers and side dummy wafers. Product wafers are the wafers on which semiconductor elements such as ICs are actually manufactured. Product wafers are placed in the center in the vertical direction of the entire array area of ​​the arranged wafers. On the other hand, side dummy wafers are wafers used in place of product wafers and are placed at both ends in the vertical direction of the entire array area of ​​the arranged wafers, for example, on either side of the product area, where the quality as a product wafer cannot be ensured. In the processing chamber 11, the area where product wafers are placed is called the product area, and the area where side dummy wafers are placed is called the dummy area.

[0059] As shown in Figure 2, the supply buffer 8 is a region provided on the side wall of the cylindrical portion of the inner tube 6 and protruding outward from the side wall. It is formed by the outwardly protruding side walls 8d and 8e and the circumferential wall 8f formed along the inner surface of the outer tube 7 (processing chamber 11). The supply buffer 8 can be divided into three parts 8a, 8b, and 8c along the circumferential direction of the cylindrical portion by partition walls 89a and 89b. The divided parts 8a, 8b, and 8c of the supply buffer 8 may each be used as nozzle chambers. The partition walls 89a and 89b function as flow straightening plates that suppress the generation of vortices within the width of the supply buffer 8 and the return flow to the supply buffer 8.

[0060] Of the divided portions of the supply buffer 8, nozzles 22 and 23 for supplying the first raw material gas are provided in the central portion 8b, which is enclosed by partition walls 89a, 89b and a peripheral wall 8f. The width of the central portion 8b is set to, for example, 1 to 1.2 times the sum of the widths of nozzles 22 and 23. This reduces the dead space within the central portion 8b, increases the flow area of ​​the nozzles, and suppresses the return flow of the first raw material gas. At the boundary between the central portion 8b of the supply buffer 8 and the cylindrical portion, a sector is formed by a virtual arc connecting both ends of the cylindrical portion in the circumferential direction and the center C1 of the wafer 9. In this embodiment, the central angle of the sector is less than 30°. In this disclosure, the central angle of the sector can be set arbitrarily. Also, the direction from the center of the arrangement of nozzles 22 and 23 toward the center C1 of the wafer 9 is defined as the reference direction A.

[0061] Furthermore, at least nozzles 22 and 23 constitute an injection device for injecting the first raw material gas onto the wafer 9. The injection device may also include other nozzles 24-27, and nozzle support parts 28 and 29. It may also include a gas supply system.

[0062] As shown in Figure 3, a supply slit 91 is formed in the central portion 8b of the supply buffer 8. The supply slit 91 opens in the central portion 8b, extending at least over the product wafer area in the vertical direction H of the apparatus, and over the entire width of the central portion 8b itself in the width direction W of the apparatus. Therefore, the injection holes 92 and 93 of nozzles 22 and 23, which supply gas directly to the wafer 9, face the wafer 9 exposed inside the cylindrical portion in both the vertical direction H and the width direction W of the apparatus. On the other hand, supply slits 90 are formed in the left portion 8a and the right portion 8c of the supply buffer 8, one for each wafer.

[0063] (Exhaust vents) As shown in Figure 2, multiple exhaust slits, including a main exhaust slit 82 and sub-exhaust slits 83a and 83b, are formed on the side wall of the cylindrical portion. The multiple exhaust slits exhaust the raw material gas from the inside of the cylindrical portion. In this embodiment, the number of multiple exhaust slits is three, consisting of one main exhaust slit 82 and two sub-exhaust slits 83a and 83b. In this disclosure, the number of multiple exhaust slits may be at least two or more.

[0064] (Main exhaust slit) The main exhaust slit 82 is formed on the side wall of the cylindrical portion opposite to the supply buffer 8 with respect to the center C1 of the wafer 9.

[0065] (Secondary exhaust slit) The two sub-exhaust slits 83a and 83b open on either side of a virtual vertical plane α set inside the cylindrical portion. The virtual vertical plane α is a plane perpendicular to the wafer 9 and, as shown in Figure 2, is set to pass through the circumferential center of the cylindrical portion and the axis of the cylindrical portion (center of the wafer 9) at the boundary between the supply buffer 8 and the cylindrical portion in a plan view. The axis of the cylindrical portion coincides with the center of the wafer 9.

[0066] The two sub-exhaust slits 83a and 83b, as a pair of exhaust slits, are at the same height as the main exhaust slit 82 and sandwich the main exhaust slit 82. In a plan view, virtual lines L are set connecting the centers of the sub-exhaust slits 83a and 83b to the center C1 of the wafer 9. In this embodiment, the angle between the virtual line L and the virtual vertical plane α is obtuse. This angle is measured starting from the supply buffer 8 side. In this disclosure, the angle between the virtual line L and the virtual vertical plane α is not limited to an obtuse angle.

[0067] As shown in Figure 2, the widths of the two sub-exhaust slits 83a and 83b in the circumferential direction of the cylindrical portion are smaller than the width of the main exhaust slit 82. In this disclosure, the widths of the sub-exhaust slits 83a and 83b may be greater than or equal to the width of the main exhaust slit 82.

[0068] In this embodiment, the opening width of the main exhaust slit 82 along the circumferential direction of the cylindrical portion narrows from top to bottom along the axial direction of the cylindrical portion. Similarly, the opening width of each of the pair of sub-exhaust slits 83a and 83b along the circumferential direction of the cylindrical portion narrows from top to bottom along the axial direction of the cylindrical portion. In this disclosure, the opening widths of the main exhaust slit 82 and the pair of sub-exhaust slits 83a and 83b along the circumferential direction of the cylindrical portions can be set arbitrarily.

[0069] Furthermore, the sub-exhaust slits 83a and 83b are positioned on the opposite side of the supply buffer 8, separated by a virtual plane β, and are configured to exhaust the gas supplied from the supply buffer 8 to the outside of the cylindrical section at a position further away from the virtual plane β. This allows the gas supplied into the processing chamber 11 to circulate sufficiently within the processing chamber 11. Here, the virtual plane β is a plane perpendicular to the wafer 9, and as shown in Figure 2, in a plan view, it passes through the axis of the cylindrical section (the center of the wafer 9) and is set to divide the supply buffer 8 from the main exhaust slit 82 and the sub-exhaust slits 83a and 83b.

[0070] <Main part configuration> Next, each nozzle in the substrate processing apparatus 1 according to this embodiment will be described in detail. Note that the positions of nozzles 22, 23, 24, 25, 26, and 27 in Figure 3 are schematic positions for illustrative purposes and differ from their actual positions inside the processing chamber 11. Furthermore, in the following, the position of each nozzle in a plan view refers to the center position of the cylindrical nozzle.

[0071] Within the supply buffer 8, nozzles 22 as the first injection section, 23 as the second injection section, 24 as the third injection section, 25 as the fourth injection section, 26 as the fifth injection section, and 27 as the sixth injection section are arranged. Of the divided parts of the supply buffer 8, nozzles 22 and 23 are located in the central section 8b, nozzles 24 and 25 are located in the left-hand section 8a with respect to the gas flow direction from the supply buffer 8 to the main exhaust slit 82, i.e., the section enclosed by the side wall 8d, the peripheral wall 8f, and the partition wall 89a, and nozzles 26 and 27 are located in the right-hand section 8c with respect to the gas flow direction, i.e., the section enclosed by the partition wall 89b, the peripheral wall 8f, and the side wall 8e. Furthermore, nozzles 22 and 23 are configured to be symmetrical across a virtual vertical plane α. Thus, the first raw material gas can be supplied equally to the processing chamber 11 from nozzles 22 and 23. In other words, nozzles 22 and 23 constitute an injection device for supplying the first raw material gas to the processing chamber 11.

[0072] (1st injection part) The nozzle 22 extends in the vertical direction and is positioned opposite the main exhaust slit 82, as shown in Figure 2. The nozzle 22 is supported by the first nozzle support portion 28 and consists of an end portion 22c connected to the gas supply pipe 31, a transition portion 22a whose cross-sectional area gradually increases from bottom to top and whose cross-sectional shape changes in the direction of flow of the first raw material gas, and a cylindrical portion 22b extending upward from the upper end of the transition portion 22a, the cross-sectional shape of the cylindrical portion 22b being constant along its entire vertical length.

[0073] The transition section 22a is configured to connect the end portion 22c and the cylindrical portion 22b. The cylindrical portion 22b also has a front surface 22d that is continuously formed on the side facing the wafer 9. The front surface 22d is located between the front surface 22d and the supply slit 91 and is a curved surface having a curvature opposite to that of the inner tube 6 with respect to a virtual plane γ parallel to the virtual plane β, and is curved so as to gradually move away from the supply slit 91 from the center side of the central portion 8b toward the partition wall 89b.

[0074] Furthermore, the cylindrical portion 22b has a side surface 22e that extends outward from the central end of the front surface 22d in a direction parallel or substantially parallel to the radial direction from the center of the wafer 9, and a back surface 22f formed between the outer peripheral end of the side surface 22e and the end of the front surface 22d on the partition wall 89b side. Therefore, the side surface 22e faces the opposing nozzle (nozzle 23), the cylindrical portion 22b has a roughly triangular cross-section, and is configured such that its thickness gradually decreases from the center of the central portion 8b toward the partition wall 89b.

[0075] In this specification, when it is stated that the planes are substantially parallel or substantially identical tangent planes, it means that the normals and injection directions of the nozzles 22 and 23 are within ±5° of the reference direction. Furthermore, the back surface 22f may be a cylindrical surface along the peripheral wall 8f or the inner surface of the processing chamber 11, or it may be a plane approximating the cylindrical surface. The same applies to the back surface 23f, which will be described later. This configuration makes it possible to increase the cross-sectional area (flow path area) of the cylindrical portion of the nozzles 22 and 23.

[0076] As shown in Figures 4 and 5, the front surface 22d is arranged along a direction parallel to the main surface of the wafer 9 and has a plurality of injection holes 92 for injecting gas into the wafer 9. The plurality of injection holes 92 are formed on the front surface 22d substantially perpendicular to the thickness direction, and in this embodiment, five injection holes 92 are formed. Each injection hole 92 is formed at a predetermined interval, and the curvature of the front surface 22d is set such that the angle of the normal of the front surface 22d at the position where each injection hole 92 is located increases monotonically with respect to the reference direction A in the order of the arrangement of each injection hole. This angle is considered positive in the direction away from the virtual vertical plane α. Specifically, if we let θ1 be the inclination angle of the main line (normal) with respect to the reference direction A of the injection hole 92 closest to the center, θ3 be the inclination angle of the main line (normal) with respect to the reference direction A of the injection hole closest to the partition wall 89b, and θ2 be the inclination angle of the main line (normal) with respect to the reference direction A of the injection holes 92 other than those at both ends, then the relationship between each inclination angle is θ1 < θ2 < θ3. Also, the main line of the injection hole 92 closest to the center is approximately parallel to the reference direction A, and θ1 is ±5°. Therefore, the front surface 22d is a curved surface that is convex toward the wafer 9 side over the region where the multiple injection holes 92 are arranged, and is configured such that the distance from the wafer 9 increases as it moves away from the nozzle 23 on the other side. For this reason, by simply forming multiple vertical holes on the front surface 22d, it is possible to obtain multiple injection holes 92 in which the angle with respect to the reference direction A increases monotonically.

[0077] Furthermore, each injection hole 92 is not limited to being arranged in a perfectly straight line parallel to the main surface of the wafer 9; it is sufficient that each injection hole is aligned with the main surface of the wafer 9 as a whole. Therefore, the arrangement of each injection hole 92 along the direction parallel to the main surface of the wafer 9 includes arrangements where each injection hole 92 is arranged in a zigzag pattern in the vertical direction, or arrangements where each injection hole 92 is tilted within ±5° from the direction parallel to the main surface of the wafer 9. Also, "monotonically increasing" includes cases where the tilt angle of some, but not all, consecutive injection holes 92 is the same.

[0078] At least one of the multiple injection holes 92 may be directly opposite the main exhaust slit 82 across the central axis of the wafer 9. The remaining injection holes 92 are inclined at a predetermined angle with respect to the reference direction and are configured to inject gas in a direction inclined with respect to the injection direction of the injection hole 92 directly opposite the main exhaust slit 82. Therefore, the first raw material gas is injected radially in a plan view through the multiple injection holes 92.

[0079] (2nd injection part) The nozzle 23 has a shape that is mirror-symmetric to the nozzle 22 and is supported by the second nozzle support portion 29. The nozzle 23 is composed of an end portion 23c (not shown) connected to the gas supply pipe 32, a transition portion 23a whose cross-sectional area gradually increases from bottom to top and whose cross-sectional shape changes in the direction in which the first raw material gas flows, and a cylindrical portion 23b extending upward from the upper end of the transition portion 23a, the cross-sectional shape of the cylindrical portion 23b is constant along its entire vertical length.

[0080] The transition section 23a is configured to connect the end portion 23c and the cylindrical portion 23b, and the cylindrical portion 23b has a front surface 23d that is continuously formed on the side facing the wafer 9. The front surface 23d is a curved surface with curvature opposite to that of the inner tube 6 with respect to a virtual plane γ, and is curved so as to gradually move away from the supply slit 91 from the center side of the central portion 8b toward the partition wall 89a. The cylindrical portion 23b also has a side surface 23e that extends outward from the central end of the front surface 23d in the outer peripheral direction parallel or substantially parallel to the radial direction from the center of the wafer 9, and a back surface 23f formed between the outer peripheral end of the side surface 23e and the end of the front surface 23d toward the partition wall 89a. Therefore, the side surface 23e faces the opposing nozzle (nozzle 22), the cylindrical portion 23b has a roughly triangular cross-section, and is configured so that its thickness gradually decreases from the center side of the central portion 8b toward the partition wall 89a.

[0081] The front surface 23d is arranged along a direction parallel to the main surface of the wafer 9 and has a plurality of injection holes 93 for injecting gas into the wafer 9. The plurality of injection holes 93 are formed on the front surface 23d substantially perpendicular to the thickness direction, and in this embodiment, five injection holes 93 are formed. Each injection hole 93 is formed at a predetermined interval, and the curvature of the front surface 23d is set such that the angle of the normal of the front surface 23d at the position where each injection hole 93 is located increases monotonically with respect to the reference direction A in the order of the arrangement of each injection hole. That is, if the inclination angle of the main line (normal) with respect to the reference direction A of the injection hole 93 closest to the center is θ4, the inclination angle of the main line (normal) with respect to the reference direction A of the injection hole closest to the partition wall 89a is θ6, and the inclination angle of the main line (normal) with respect to the reference direction A of the injection holes 93 other than those at both ends is θ5, then the relationship between the inclination angles is θ4 < θ5 < θ6. Furthermore, the main line of the central injection hole 93 is approximately parallel to the reference direction A, and θ4 is ±5° with respect to the reference direction A. Therefore, the front surface 23d is a curved surface that is convex toward the wafer 9 side over the region where the multiple injection holes 93 are arranged, and is configured such that the distance from the wafer 9 increases as it moves away from the opposing nozzle 22. For this reason, by simply forming multiple vertical holes on the front surface 23d, it is possible to obtain multiple injection holes 93 in which the angle with respect to the reference direction A increases monotonically.

[0082] At least one of the multiple injection holes 93 is directly opposite the main exhaust slit 82 across the central axis of the wafer 9. The remaining injection holes 93 are inclined at a predetermined angle in the opposite direction to the other injection holes 93 with respect to the reference direction, and are configured to inject gas in a direction inclined with respect to the injection direction of the injection hole 93 directly opposite the main exhaust slit 82. Therefore, the first raw material gas is injected radially in a plan view through the multiple injection holes 93.

[0083] Furthermore, nozzles 22 and 23 are arranged such that their side surfaces 23e are adjacent to and parallel or approximately parallel to side surface 22e. Also, since nozzles 22 and 23 are mirror symmetric, θ1 = θ4 or θ1 ≈ θ4, θ2 = θ5 or θ2 ≈ θ5, and θ3 = θ6 or θ3 ≈ θ6. In this case, the main stream lines of the injection holes 92 and 93 closest to the opposing nozzle are approximately parallel to the reference direction A, and the injection holes 92 and 93 closest to the opposing nozzle are formed on approximately the same tangent plane and eject the first raw material gas approximately parallel to each other. Therefore, the installation space for nozzles 22 and 23 can be reduced, and since the gas ejected from the injection holes 92 and 93 closest to the opposing nozzle merge, a single main stream line can be considered as the same main stream line.

[0084] As described above, in this disclosure, the injection holes 92 of nozzle 22 and 93 of nozzle 23 are configured to eject the first raw material gas in directions that are opposite to each other, along approximately five main flow lines. An example of a uniform velocity curve of the first raw material gas is shown as a dashed line in Figure 4.

[0085] In this disclosure, among the plurality of injection holes 92, the injection holes 92 located at both ends have a larger opening area than the adjacent injection holes 92. Therefore, the flow rate of the first raw material gas injected from the injection holes 92 at both ends can be increased. Also, at least one of the plurality of injection holes 92 has a diameter larger than the thickness of the front surface 22d. Therefore, the internal nozzle pressure required to obtain the desired flow rate can be reduced, and decomposition within the nozzle can be suppressed. Furthermore, in this disclosure, sets of plurality of injection holes 92 arranged along a direction parallel to the main surface of the wafer 9 are provided in multiple stages corresponding to a plurality of substrates including wafers 9 arranged along a direction perpendicular to the wafer 9, and the height of each injection hole 92 corresponds to the wafers 9 arranged in multiple stages. Therefore, the first raw material gas can be efficiently supplied to each wafer 9. In addition, the distance between the boundary between the cylindrical portion 22b and the transition portion 22a and the plurality of injection holes 92 is set to be greater than the Kolmogorov length.

[0086] The above configuration and operation also apply to the injection holes 93 of the nozzle 23.

[0087] Furthermore, among the multiple injection holes 92 and 93 of nozzles 22 and 23, the distance between the injection holes 92 and 93 closest to the other nozzle in either nozzle 22 or nozzle 23 is set to be at least 1 times the narrowest distance between the multiple injection holes 92 of nozzle 22 and at least 2 times the widest distance between them, and at least 1 times the narrowest distance between the multiple injection holes 93 of nozzle 23 and at least 2 times the widest distance between them. In other words, the difference in the distance between the injection holes is minimized for the entire injection device. On the other hand, if the holes in the nozzles are too close together, the flows will merge, preventing a wide, radial flow. Also, if the holes are too far apart, it can cause vortices to form, increasing the time it takes to reach the substrate and leading to further decomposition.

[0088] Furthermore, if the injection holes 92 and 93 are formed at an angle to the thickness direction of the nozzles 22 and 23, the gas flow rate will differ near the outlets of the injection holes 92 and 93 between the side closer to the opposing nozzle and the side further away, resulting in a difference in conductance. This difference in conductance causes the first raw material gas to be deflected towards the side with lower conductance (the side closer to the opposing nozzle), ultimately forming a main flow line in almost the same direction as the desired thickness direction, potentially preventing the first raw material gas from flowing. In this disclosure, the injection holes 92 and 93 are formed approximately perpendicular to the thickness direction of the nozzles 22 and 23 to achieve uniform conductance near the outlets of the injection holes 92 and 93. Therefore, the first raw material gas ejected from the injection holes 92 and 93 can be strongly directed in a direction approximately perpendicular to the thickness direction of the nozzles 22 and 23.

[0089] (3rd injection part) The nozzle 24 has injection holes 94 that face at least the product region of the processing chamber 11. The nozzle 24 supplies a second raw material gas to the product wafer and the dummy wafer through the injection holes 94. The injection holes 94 may be provided in both the product region and the dummy region, or only in the product region.

[0090] (4th injection part) The nozzle 25 has injection holes 95 that supply assist gas only to the substrate in the upper dummy region (upper dummy region) of the dummy region. The number of injection holes 95 of the nozzle 25 is one or more. That is, the nozzle 25 supplies assist gas to one or more dummy wafers. In this embodiment, the case in which the nozzle 25 has three injection holes 95 is exemplified, but in this disclosure, one or more can be arbitrarily set.

[0091] Furthermore, although this disclosure illustrates a case where the injection holes 95 are provided only in the upper dummy region, the injection holes 95 may be provided in both the product region and the dummy region. In this case, the number of injection holes in the dummy region may be increased to more than the number of injection holes in the product region, or the number of injection holes arranged in a single row may be changed, for example, by having three injection holes arranged in a single row in the dummy region and one injection hole arranged in a single row in the product region, so that more assist gas is injected into the dummy region than in the product region.

[0092] (5th injection part) The nozzle 26 has injection holes 96 that face at least the product region of the processing chamber 11. The nozzle 26 supplies a second raw material gas to the product wafer and the dummy wafer through the injection holes 96. The injection holes 96 may be provided in both the product region and the dummy region, or only in the product region.

[0093] (6th injection part) The nozzle 27 has at least an injection hole (not shown) facing the product area. The injection hole may be provided in both the product area and the dummy area, or it may be provided only in the product area.

[0094] The nozzle 27 supplies assist gas to the product wafer through the injection hole. The nozzle 27 can adjust the in-plane uniformity of all product wafers.

[0095] Furthermore, nozzles 25 and 27 supply assist gas when the first raw material gas is supplied from nozzles 22 and 23, when the second raw material gas is supplied from nozzles 24 and 26, or when both the first and second raw material gases are supplied.

[0096] In this embodiment, nozzle 25 and nozzle 27 are arranged to sandwich nozzles 22, 23, 24, and 26. Nozzle 27 supplies an assist gas when a first raw material gas, which is a Group 14 element raw material gas, is supplied from nozzles 22 and 23. Examples of Group 14 element raw material gases are C, Si, Ge, Sn, Pb, etc. In this disclosure, the first raw material gas may be a raw material gas other than a Group 14 element.

[0097] (Control Unit) Figure 6 is a block diagram showing the substrate processing apparatus 1, and the control unit 2 (so-called controller) of the substrate processing apparatus 1 is configured as a computer. This computer is equipped with a Central Processing Unit (CPU) 97, Random Access Memory (RAM) 98, storage device 99, and I / O port 101.

[0098] The RAM 98, storage device 99, and I / O port 101 are configured to exchange data with the CPU 97 via the internal bus 102. An input / output device 103, configured as, for example, a touch panel, is connected to the control unit 2.

[0099] The storage device 99 is composed of, for example, flash memory, an HDD (Hard Disk Drive), etc. The storage device 99 contains, in a readable format, control programs that control the operation of the circuit board processing device, and process recipes that describe the procedures and conditions for circuit board processing, as described later.

[0100] The process recipe is a combination of steps in the substrate processing process described later that the control unit 2 executes to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, control program, etc., will be collectively referred to simply as the program.

[0101] In this specification, the term "program" may include only a process recipe, only a control program, or both. RAM98 is configured as a memory area (work area) where programs and data read by CPU97 are temporarily held.

[0102] The I / O port 101 is connected to the MFCs 43, 48, 54, 57, 61, 64, 67, 71, 74, 77, valves 44, 46, 49, 52, 55, 58, 62, 65, 68, 72, 75, 78, pressure sensor 50, APC valve 87, vacuum pump 88, heater 4, temperature sensor, rotary mechanism 18, elevator 21, etc.

[0103] The CPU 97 is configured to read and execute a control program from the storage device 99, and to read a process recipe from the storage device 99 in response to input of operation commands from the input / output device 103, etc.

[0104] The CPU 97 is configured to control the flow rate adjustment operations of various gases by MFCs 43, 48, 54, 57, 61, 64, 67, 71, 74, and 77, the opening and closing operations of valves 44, 46, 49, 52, 55, 58, 62, 65, 68, 72, 75, and 78, and the opening and closing operations of the APC valve 87, in accordance with the contents of the read process recipe. The CPU 97 is also configured to control the pressure adjustment operation by the APC valve 87 based on the pressure sensor 50, the starting and stopping of the vacuum pump 88, and the temperature adjustment operation of the heater 4 based on the temperature sensor. Furthermore, the CPU 97 is configured to control the rotation and rotation speed adjustment operations of the boat 12 by the rotating mechanism 18, and the raising and lowering operations of the boat 12 by the elevator 21.

[0105] The control unit 2 is not limited to being configured as a dedicated computer, but may also be configured as a general-purpose computer. For example, the control unit 2 of this embodiment can be configured by preparing an external storage device 104 that stores the above-mentioned program, and installing the program on a general-purpose computer using this external storage device 104. Examples of external storage devices include magnetic disks such as hard disks, optical disks such as CDs, magneto-optical disks such as MOs, and semiconductor memory such as USB memory. Furthermore, the control unit 2 is not limited to being provided within each individual substrate processing device 1, but may also be configured as a server capable of controlling multiple substrate processing devices.

[0106] <Substrate Processing Method> Next, with reference to Figure 7, an example of substrate processing will be described. Here, as an example of a semiconductor device manufacturing process, a cycle process in which a film is processed is described by alternately supplying a source (raw material) as a first raw material gas and a reactant (reaction gas) as a second raw material gas to the processing chamber. In this embodiment, an example of forming a silicon nitride film (Si3N4 film, hereinafter also called SiN film) on a substrate will be described using a Si raw material gas as an example of a source and a nitrogen-containing gas as a reactant.

[0107] In the film formation process in this embodiment, a SiN film is formed on the wafer 9 by performing a predetermined number of non-simultaneous cycles (one or more times) of the following steps: supplying a raw material gas (first raw material gas) to the wafer 9 in the inner tube 6 (film formation step 1: STEP:03 in Figure 7), purging the remaining raw material gas from the inner tube 6 (film formation step 2: STEP:04 in Figure 7), supplying a nitrogen-containing gas, which is a reaction gas (second raw material gas), to the wafer 9 in the inner tube 6 (film formation step 3: STEP:05 in Figure 7), and purging the remaining nitrogen-containing gas from the inner tube 6 (film formation step 4: STEP:06 in Figure 7).

[0108] First, in STEP 01 in Figure 7, the wafer 9 is loaded into the boat 12. By moving the boat 12 into the inner tube 6, the substrate is housed inside the cylindrical part of the inner tube 6. Next, in STEP 02 in Figure 7, after moving the boat 12 into the inner tube 6, the pressure and temperature inside the inner tube 6 are adjusted. Then, the four steps of the film deposition process 1 to 4 are executed sequentially. Each step is described in detail below.

[0109] (Film forming process 1) In the film formation process 1, at STEP 03 in Figure 7, a flash supply of the first raw material gas is performed as shown in Patent Document 2. For example, with valve 44 open and valve 46 closed, the first raw material gas supplied from the raw material gas supply source 42 is supplied to tank 45 by MFC 43. Similarly, with valve 49 open and valve 52 closed, the first raw material gas supplied from the raw material gas supply source 47 is supplied to tank 51 by MFC 48. At this time, the storage time and flow rate of the first raw material gas are set so that the amount is greater than or equal to the minimum amount required to enable flash supply into tanks 45 and 51, and so that the same amount of first raw material gas can be stored.

[0110] When a predetermined amount of the first raw material gas has accumulated in tanks 45 and 51, valve 44 is closed and valve 46 is opened to release the first raw material gas from tank 45 and flush supply the first raw material gas to nozzle 22. At the same time, valve 49 is closed and valve 52 is opened to release the first raw material gas from tank 51 and flush supply the first raw material gas to nozzle 23. That is, nozzles 22 and 23 simultaneously inject the same gas at approximately the same flow rate. Therefore, a large amount of the first raw material gas can be supplied into the processing chamber 11 without increasing the internal pressure of nozzles 22 and 23. Furthermore, during the flush supply of the first raw material gas, the vacuum pump 88 is controlled to maintain the atmospheric pressure in the main exhaust slit 82 or exhaust space S below a predetermined pressure. The pressure in the main exhaust slit 82 is maintained in the range of 1 Pa to 3000 Pa, preferably below 300 Pa. A pressure of 300 Pa or less makes it possible to achieve an average flow velocity of 10 m / s or more for the first raw material gas.

[0111] When the first raw material gas is supplied, it is simultaneously injected from nozzles 22 and 23 toward the wafer 9 through multiple injection holes 92 and 93, respectively. The first raw material gas is ejected along five main lines in five or more different directions, with a radial flow velocity peak, and the injected raw material gas is exhausted to the outside of the cylinder through the main exhaust slit 82 and two sub-exhaust slits 83a and 83b. At this time, the first raw material gas flash-supplied from nozzles 22 and 23 has a predetermined average flow velocity on a predetermined plane parallel to the wafer 9 within the processing container. The average flow velocity of the first raw material gas is appropriately set from 1 m / s to 200 m / s, and is preferably 10 m / s or more. A flow velocity of 10 m / s or more makes it possible to distribute the first raw material gas throughout the wafer with a low degree of resolution.

[0112] Furthermore, the flow rate (approximately the same flow rate) of the first raw material gas supplied from nozzles 22 and 23 can be set to a flow rate that does not generate an unsteady backflow on the wafer 9, except near the inner wall of the inner tube 6, by passing through a virtual plane β on the central axis of the wafer 9 that is directly opposite to the injection holes 92 and 93, in the direction approaching the injection holes 92 and 93. This suppresses the generation of steady backflow during flash supply. In addition, in the film deposition process 1, inert gas from inert gas supply sources 66 and 69 may be used as the carrier gas.

[0113] Examples of first raw material gases supplied from gas supply pipes 31 and 32 include Si source gas. Alternatively, Si and halogen-containing gases can be used as the first raw material gas. Examples of Si and halogen-containing gases include inorganic chlorosilane gases such as tetrachlorosilane (SiCl4, abbreviated as STC) gas, hexachlorodisilane (Si2Cl6, abbreviated as HCDS) gas, and octachlorotrisilane (Si3Cl8, abbreviated as OCTS) gas. One or more of these can be used as the Si and halogen-containing gas. The first raw material gas corresponds to the first raw material in this disclosure. Note that in this disclosure, the first raw material is not limited to a gas, but may be a liquid substance such as a mist.

[0114] Furthermore, nozzles 25 and 27 are used to inject an assist gas, such as N2, toward the wafer 9. In other words, in this embodiment, nozzles 25 and 27 supply the assist gas when the first raw material gas is supplied from nozzles 22 and 23.

[0115] (Film formation process 2) In the film formation process 2, valves 46 and 52 are closed to stop the supply of the first raw material gas, while valves 68 and 72 are opened to supply inert gas (purge gas) from inert gas supply sources 66 and 69 to nozzles 22 and 23. Furthermore, by controlling the exhaust pump such as the vacuum pump 88 and the APC valve 87, the pressure inside the reaction tube 5 is exhausted to a predetermined pressure (i.e., vacuum), for example, 20 Pa or less, and the remaining first raw material gas is removed from the inner tube 6. At this time, continuing the supply of assist gas from nozzles 25 and 27 further enhances the purging effect of any remaining first raw material gas.

[0116] (Film forming process 3) In the film formation process 3, a nitrogen-containing gas is introduced as the second raw material gas. Valve 55 is opened, and the second raw material gas from the raw material gas supply source 53, whose flow rate is adjusted by MFC 54, is supplied into the inner tube 6 (cylindrical section) via nozzle 24. Similarly, valve 62 is opened, and the second raw material gas from the raw material gas supply source 59, whose flow rate is adjusted by MFC 61, is supplied into the inner tube 6 via nozzle 26. The second raw material gas supplied from nozzles 24 and 26 is exhausted to the outside of the inner tube 6 via the main exhaust slit 82 and the sub-exhaust slits 83a and 83b. Upon supply of the second raw material gas, the Si-containing film on the wafer 9 reacts with the second raw material gas, forming a SiN film on the wafer 9.

[0117] In this embodiment, for example, ammonia (NH3) gas can be used as the second raw material gas. NH3 gas is supplied into the inner tube 6 while being exhausted through multiple exhaust slits. The supply of NH3 gas causes a reaction between the Si-containing film on the wafer 9 and the NH3 gas. This reaction forms a SiN film on the wafer 9. In this disclosure, the second raw material is not limited to a gas, but may be a liquid substance such as a mist.

[0118] Furthermore, in the film formation process 3, the supply of assist gas from nozzles 25 and 27 continues. That is, in this embodiment, nozzles 25 and 27 supply assist gas when the second raw material gas is being supplied from nozzles 24 and 26.

[0119] (Film forming process 4) In the film formation process 4, valves 55 and 62 are closed to stop the supply of the second raw material gas, while valves 75 and 78 are opened to supply inert gas (purge gas) from inert gas supply sources 73 and 76 to nozzles 24 and 26. Furthermore, by controlling the exhaust pump such as the vacuum pump 88 and the APC valve 87, the pressure inside the reaction tube 5 is exhausted to a predetermined pressure (i.e., vacuum), for example, 20 Pa or less, and the remaining second raw material gas is removed from the inner tube 6. At this time, continuing the supply of assist gas from nozzles 25 and 27 further enhances the purging effect of any remaining second raw material gas.

[0120] In this embodiment, the above-described film deposition steps 1 to 4 constitute one cycle, and in STEP:07 in Figure 7, a SiN film of a predetermined thickness can be formed on the wafer 9 by performing the cycle of film deposition steps 1 to 4 a predetermined number of times. In this embodiment, film deposition steps 1 to 4 are repeated multiple times. In this disclosure, film deposition steps 1 to 4 may be performed one at a time without being repeated.

[0121] After the above-described film formation process is completed, in STEP 08 in Figure 7, the pressure inside the inner tube 6 is returned to normal pressure (i.e., atmospheric pressure) by supplying an inert gas such as N2 gas into the inner tube 6 and evacuating it. This purges the inside of the inner tube 6 with the inert gas, removing any remaining gases from inside the inner tube 6 (inert gas purging). Subsequently, the atmosphere inside the inner tube 6 is replaced with the inert gas (inert gas replacement), and the pressure inside the inner tube 6 is returned to normal pressure.

[0122] Then, in STEP 09 in Figure 7, when the wafer 9 is removed from the inner tube 6, the substrate processing according to this embodiment is completed. The above series of steps constitutes the method for manufacturing a semiconductor device according to this embodiment.

[0123] Here, we will explain the flow of the first raw material gas within nozzles 22 and 23. Since nozzles 22 and 23 have the same shape, we will explain nozzle 22 below.

[0124] When the first raw material gas is supplied from the end portion 22c, the first raw material gas flows from the bottom to the top of the transition section 22a. Since the transition section 22a has a configuration in which the cross-sectional area gradually increases toward the top, the pressure of the first raw material gas decreases toward the top of the transition section 22a. In addition, the first raw material gas that flows into the cylindrical section 22b is injected into the inner tube 6 from the injection holes 92 of each stage and flows toward the top of the cylindrical section 22b.

[0125] Furthermore, if the flow rate of the first raw material gas is increased without changing the cross-sectional area of ​​the cylindrical section 22b, excess fluid energy (i.e., kinetic, potential, pressure, and internal energy) will be generated, and the pressure will increase quadratically towards the upper end (tip) of the cylindrical section 22b. In this case, the flow rate of the first raw material gas injected from the upper injection port 92 will increase more than the flow rate of the first raw material gas injected from the lower injection port 92, resulting in a difference in the flow rate of the first raw material gas between the upper (tip) and lower (base) parts of the cylindrical section 22b. In other words, the uniformly supplied flow rate depends on the cross-sectional area. Moreover, if the flow rate of the first raw material gas is increased, oscillating flow will also occur in the lower part of the cylindrical section 22b.

[0126] On the other hand, by setting the flow rate of the first raw material gas to an appropriate flow rate for the nozzle 22, the difference in internal pressure between the upper and lower sections of the cylindrical portion 22b can be reduced. In other words, by adjusting the flow rate of the first raw material gas and the cross-sectional area of ​​the cylindrical portion 22b of the nozzle 22, the increase in internal pressure at the tip of the cylindrical portion 22b can be suppressed, and asymmetric flow of the first raw material gas can be prevented.

[0127] In this embodiment, the cross-sectional areas of the cylindrical portion 22b of nozzle 22 and the cylindrical portion 23b of nozzle 23 are set such that the flow rate is below a predetermined level that prevents the internal pressure from increasing quadratically from the lower to the upper injection holes 92.

[0128] (Effects and Benefits) According to this embodiment, one or more of the following effects can be obtained.

[0129] In this embodiment, nozzles 22 and 23 have cylindrical portions 22b and 23b that extend upward from the upper ends of the transition portions 22a and 23a. That is, the cylindrical portions 22b and 23b have a larger cross-sectional area (flow channel area) than the end portions 22c and 23c. Therefore, the flow channel area of ​​nozzles 22 and 23 can be enlarged, so that even when supplying gas with a large flow rate flash flow, the blowing into the plane of the wafer 9 can be made uniform, backflow can be suppressed, and in-plane film deposition performance can be improved.

[0130] In this embodiment, nozzles 22 and 23 each have multiple injection holes, namely multiple injection holes 92 and multiple injection holes 93, arranged in a direction substantially parallel to the surface of the wafer 9, and gas is supplied radially into the inner tube 6 (processing chamber 11) along five main lines from the injection holes 92 and 93. As a result, the gas flow within the inner tube 6 becomes wider and backflow is suppressed. Furthermore, gas stagnation within the inner tube 6 is suppressed, improving the supply efficiency of the raw material gas, improving gas replacement efficiency, and improving the partial pressure level within the inner tube 6. In addition, the in-plane uniformity of the wafer 9 during the film deposition process can be improved, and film deposition on the sides of fine holes and grooves becomes possible.

[0131] Furthermore, the distance between nozzles 22 and 23 and the wafer 9 increases as they move away from the opposing nozzle, and the normals of nozzles 22 and 23 at the positions where each injection hole 92 and 93 is located are configured such that the angle with respect to the reference direction increases monotonically in the order of the injection holes. Therefore, except for the injection hole closest to the opposing nozzle, the gases injected from each injection hole 92 and 93 are prevented from merging and reinforcing each other, thus making the gas flow velocity within the inner tube 6 uniform.

[0132] Furthermore, the injection holes 92 and 93 are formed perpendicular to the thickness direction of the nozzles 22 and 23. Therefore, the gas ejected from the injection holes 92 and 93 has strong directionality in the direction perpendicular to the thickness direction of the nozzles 22 and 23, which prevents the gases ejected from each injection hole 92 and 93 from merging and makes the gas flow velocity within the inner tube 6 uniform.

[0133] Furthermore, nozzles 22 and 23 each have transition sections 22a and 23a and cylindrical sections 22b and 23b, respectively, and the transition sections 22a and 23a are configured such that their cross-sectional area gradually increases upward. That is, since the flow path area at the upper end (tip) of nozzles 22 and 23 is larger than the flow path area at the lower end (base), it is possible to suppress the increase in pressure (internal pressure) at the tip side of nozzles 22 and 23.

[0134] Furthermore, the multiple injection holes 92 and multiple injection holes 93 are arranged on the same plane, and the heights of the injection holes 92 and 93 correspond to each wafer 9 arranged in multiple stages. Therefore, the gas flow supplied to each wafer 9 can be made wide and uniform, improving in-plane uniformity and inter-plane uniformity. Moreover, since at least one of the injection holes 92 and 93 faces the main exhaust slit 82, exhaust of the first raw material gas in the processing chamber 11 can be promoted and stagnation can be suppressed.

[0135] Furthermore, in this embodiment, nozzles 25 and 27 for supplying assist gas are arranged so as to sandwich nozzles 22, 23, 24, and 26. Therefore, the assist gas supplied from nozzles 25 and 27 can dilute the first raw material gas and the second raw material gas, thereby improving the supply efficiency of each raw material gas. In addition, nozzles 25 and 27 can improve the gas displacement during the film formation process, and can also suppress the return flow of gas that has left the supply buffer 8 back to the supply buffer 8 due to vortices or turbulence in the processing chamber 11.

[0136] Furthermore, in this embodiment, nozzles 25 and 27 supply assist gas when the first raw material gas is supplied from nozzles 22 and 23, or when the second raw material gas is supplied from nozzles 24 and 26. This improves the supply efficiency of the raw material gas, enhances gas replacement efficiency, and suppresses backflow.

[0137] In this disclosure, the first raw material gas supplied to nozzles 22 and 23 is ejected in five directions along five main lines, and the shape of the nozzles is not limited to nozzles 22 and 23 shown in Figure 4. For example, nozzles 105 and 106 shown in Figures 8 and 9 represent modified versions of nozzles 22 and 23.

[0138] If we define the reference plane as a plane passing through reference direction A and perpendicular to the surface of the wafer 9, the front surface of the nozzle 105 has a first flat portion 105a extending away from the reference plane, a second flat portion 105b continuous with the first flat portion 105a and extending away from both the reference plane and the wafer 9, a third flat portion 105c continuous with the second flat portion 105b and extending away from both the reference plane and the wafer 9, and a fourth flat portion 105d continuous with the third flat portion 105c and extending away from both the reference plane and the wafer 9. In other words, the front surface of the nozzle 105 has a recess that is recessed in the direction away from the wafer 9.

[0139] Furthermore, injection holes 107 are drilled in the first flat portion 105a, the second flat portion 105b, and the fourth flat portion 105d, respectively, which are substantially perpendicular to the thickness direction of the nozzle 105. If we define the direction away from the reference plane and away from the wafer 9 as the first direction, and the direction away from the reference plane and further away from the wafer 9 than the first direction as the second direction, then the second flat portion 105b can be described as the first flat portion facing the first direction, the fourth flat portion 105d as the second flat portion facing the second direction, and the third flat portion 105c as the connecting surface that connects the first flat portion and the second flat portion and faces towards the reference plane.

[0140] Let θ1 be the angle of inclination of the normal (mainstream line) with respect to the reference direction A at the position where the injection holes 107 of the first flat section 105a are located, let θ2 be the angle of inclination of the normal (mainstream line) with respect to the reference direction A at the position where the injection holes 107 of the second flat section 105b are located, and let θ3 be the angle of inclination of the normal (mainstream line) with respect to the reference direction A at the position where the injection holes 107 of the fourth flat section 105d are located. Then the relationship between each angle of inclination is θ1 < θ2 < θ3. Furthermore, the normal (mainstream line) of the injection holes 107 of the first flat section 105a is approximately parallel to the reference direction A, and θ1 is ±5°. In addition, the angle between the normal of the injection holes 107 of the first flat section 105a and the normal of the injection holes 107 of the fourth flat section 105d is 90° or less.

[0141] The nozzle 106 has a shape that is mirror-symmetric with respect to the nozzle 105, and the flat surface 106e is adjacent to the flat surface 105e and is arranged to be parallel or substantially parallel to it. The front surface of the nozzle 106 also has a first flat portion 106a that extends away from the reference plane, a second flat portion 106b that is continuous with the first flat portion 106a and extends away from the reference plane and away from the wafer 9, a third flat portion 106c that is continuous with the second flat portion 106b and extends away from the reference plane and towards the wafer 9, and a fourth flat portion 106d that is continuous with the third flat portion 106c and extends away from the reference plane and away from the wafer 9. That is, the front surface of the nozzle 106 has a recess that is recessed in the direction away from the wafer 9.

[0142] Furthermore, the first flat section 106a, the second flat section 106b, and the fourth flat section 106d are each provided with injection holes 108 that are substantially perpendicular to the thickness direction of the nozzle 106.

[0143] If we let θ4 be the angle of inclination of the normal (mainstream line) with respect to the reference direction A at the position where the injection holes 108 of the first flat section 106a are located, θ5 be the angle of inclination of the normal (mainstream line) with respect to the reference direction A at the position where the injection holes 108 of the second flat section 106b are located, and θ6 be the angle of inclination of the normal (mainstream line) with respect to the reference direction A at the position where the injection holes 108 of the fourth flat section 106d are located, then the relationship between each angle of inclination is θ4 < θ5 < θ6. Furthermore, the normal (mainstream line) of the injection holes 108 of the first flat section 106a is approximately parallel to the reference direction A, and θ4 is ±5°. Moreover, the angle between the normal of the injection holes 108 of the first flat section 106a and the normal of the injection holes 108 of the fourth flat section 106d is 90° or less.

[0144] With nozzles 105 and 106 arranged as described above, θ1 = θ4 or θ1 ≈ θ4, θ2 = θ5 or θ2 ≈ θ5, and θ3 = θ6 or θ3 ≈ θ6. Furthermore, the main streams of the injection holes 107 and 108 closest to the other nozzle among nozzles 105 and 106 are approximately parallel to the reference direction A, and the injection holes 107 and 108 closest to the other nozzle are formed on approximately the same tangent plane and eject the first raw material gas approximately parallel to each other. Therefore, the main streams of the injection holes 107 and 108 closest to the other nozzle can be considered to be the same main stream.

[0145] In the modified version of this disclosure, the first raw material gas supplied to nozzles 105 and 106 is injected in five directions along five main lines from injection holes 107 and 108, so the same effects as in the above-described embodiment can be obtained in this modified version as well. In this modified version, there is an even greater degree of freedom regarding the injection direction and spacing of the injection holes, so the space in the nozzle chamber can be used efficiently and a larger flow rate can be achieved.

[0146] Figure 10 shows the simulation results of the in-plane velocity distribution at a predetermined height when the first raw material gas is supplied from nozzles 105 and 106. In this modified example, the width and normal direction of the first flat sections 105a, 106a, the second flat sections 105b, 106b, and the fourth flat sections 105d, 106d, as well as the diameter of the injection hole 107, were optimized through such simulations. As a result, as shown in Figure 10, the first raw material gas injected from each injection hole 107, 108 can spread along five main flow lines without meandering to the position where the width of the virtual plane β, i.e., the inner tube 6 (processing chamber 11), is at its maximum. The flow passing in the opposite direction across the virtual plane β is kept to a substantially negligible level. Therefore, the generation of backflow and turbulence within the inner tube 6 can be suppressed.

[0147] Furthermore, nozzles 105 and 106 each have recesses formed on their front surfaces that are recessed away from the wafer 9, which further increases the cross-sectional area of ​​the cylindrical portion of nozzles 105 and 106. This makes it possible to make the in-plane blowout of the raw material gas uniform even when the flow rate of the first raw material gas is increased.

[0148] Furthermore, the above-described embodiments and modifications can be used in combination as appropriate. The processing procedures and conditions in this case can be the same as, for example, the processing procedures and conditions of the above-described embodiments and modifications. In addition, although this disclosure has been described by embodiments and modifications of the disclosed embodiments above, the descriptions and drawings that form part of this disclosure should not be understood as limiting this disclosure. This disclosure is not limited to the above embodiments and can be modified in various ways without departing from its essence, such as being applied to other processes such as oxidation processes.

[0149] For example, the embodiments and modifications described above describe an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at once. The disclosure is not limited to the embodiments described above and can be suitably applied to forming a film using a single-wafer substrate processing apparatus that processes one or more substrates at once. Furthermore, the embodiments described above describe an example of forming a film using a substrate processing apparatus having a hot-wall type processing furnace. The disclosure is not limited to the embodiments described above and can be suitably applied to forming a film using a substrate processing apparatus having a cold-wall type processing furnace.

[0150] Even when using these substrate processing devices, each process can be carried out using the same processing procedures and conditions as described above for the embodiments and modifications, and the same effects as described above for the embodiments and modifications can be obtained.

[0151] Furthermore, in this disclosure, for example, the board processing that the CPU 97 reads and executes in the above embodiment may be executed by various processors other than the CPU. Examples of such processors include PLDs (Programmable Logic Devices) such as FPGAs (Field-Programmable Gate Arrays) whose circuit configuration can be changed after manufacturing, and dedicated electrical circuits that are processors with circuit configurations specifically designed to execute specific processing, such as ASICs (Application Specific Integrated Circuits).

[0152] Furthermore, the board processing may be performed using one of these various processors, or using a combination of two or more processors of the same or different types (for example, multiple FPGAs, or a combination of a CPU and an FPGA). More specifically, the hardware structure of these various processors is an electrical circuit made up of circuit elements such as semiconductor elements.

[0153] Furthermore, while the above embodiments and modifications describe a configuration in which the board processing program is pre-stored (installed) in a storage device 99 such as a ROM or storage device, this disclosure is not limited thereto. The program may be provided as a program product in the form of being recorded on a computer-readable recording medium such as a CD-ROM (Compact Disk Read Only Memory) or DVD-ROM (Digital Versatile Disk Read Only Memory). Alternatively, the program may be provided in the form of being downloaded from an external device via a network.

[0154] Furthermore, the present disclosure may be constructed by partially combining the configurations included in the multiple embodiments, modifications, and aspects disclosed above. In the present disclosure constructed by such combination, the processing procedures and processing conditions performed can be configured, for example, in the same way as the processing procedures and processing conditions described in the aspects of this embodiment. The present disclosure includes various embodiments not described above, and the technical scope of the present disclosure is determined solely by the inventive features of the claims that are reasonable from the above description. [Explanation of symbols]

[0155] 1. Substrate processing apparatus 9 wafers 22 nozzles 23 nozzles 92 Injection hole 93 Injection hole

Claims

1. An injection device comprising a first nozzle and a second nozzle extending perpendicularly to the main surface of a substrate, facing the end face of the substrate, each of the first nozzle and the second nozzle having a front surface continuously formed on the side facing the substrate, and a plurality of injection holes arranged on the front surface in a direction parallel to the main surface of the substrate for injecting gas into the substrate, wherein, when the direction from the center of the arrangement of the first nozzle and the second nozzle toward the center of the substrate is taken as the reference direction, the front surface is formed such that the angle of each of the normals of the front surface at the positions where the plurality of injection holes are arranged increases with respect to the reference direction in the order of the arrangement of the plurality of injection holes, and the injection hole of each of the plurality of injection holes of the first nozzle and the second nozzle that is closest to the other nozzle is formed on substantially the same tangent plane and injects gas substantially parallel to each other.

2. The spraying device according to claim 1, wherein each of the first nozzle and the second nozzle has a side surface facing the other nozzle of the first nozzle or the second nozzle, and each of the side surfaces has a plane formed substantially parallel to the radial direction from the center of the substrate.

3. The injection device according to claim 1 or claim 2, wherein, among the plurality of injection holes of the first nozzle and the second nozzle, the distance between the injection holes closest to the other nozzle of the first nozzle or the second nozzle is no more than twice the widest distance between the plurality of injection holes of the first nozzle and no more than twice the widest distance between the plurality of injection holes of the second nozzle.

4. The spraying device according to claim 1 or claim 2, wherein at least one of the plurality of spray holes in each of the first nozzle and the second nozzle has a diameter greater than the thickness of the front surface of the first nozzle and the second nozzle.

5. The injection device according to claim 1 or claim 2, wherein the first nozzle and the second nozzle are mirror-symmetric.

6. The spraying device according to claim 1 or claim 2, wherein the front surface is a curved surface that is convex toward the substrate side over the region in which the plurality of spray holes are arranged.

7. The spraying device according to claim 3, wherein the distance of the front surface from the substrate increases as it moves away from the opposing nozzle among the first and second nozzles.

8. The spraying device according to claim 1 or claim 2, wherein the front surface has a first flat portion facing a first direction away from a predetermined reference plane defined between the first nozzle and the second nozzle, a second flat portion facing a second direction further away from the reference plane than the first direction, and a connecting surface that connects the first flat portion and the second flat portion and faces toward the reference plane, and one of the plurality of spray holes is drilled in each of the first flat portion and the second flat portion.

9. The injection device according to claim 8, wherein the angle between the normal to the connecting surface and the normals to the first flat portion and the second flat portion is 90° or less.

10. The injection device according to claim 1 or claim 2, wherein each of the first nozzle and the second nozzle has a cylindrical surface along the inner surface of a processing chamber arranged concentrically with the substrate, or a planar back surface approximating the cylindrical surface.

11. The injection device according to claim 1 or claim 2, wherein the set of multiple injection holes is provided in multiple stages corresponding to a plurality of substrates, including the substrate which is arranged along a direction substantially perpendicular to the substrate.

12. The injection device according to claim 1 or claim 2, wherein the injection holes at both ends of the plurality of injection holes have a larger opening area than the adjacent injection holes.

13. A substrate processing apparatus comprising: a processing container for housing the substrate; an injection device according to claim 1 disposed within the processing container; and an exhaust unit that opens so as to face at least one of the plurality of injection holes of the first nozzle and at least one of the plurality of injection holes of the second nozzle, straddling the central axis of the substrate, and exhausts the gas injected by the first nozzle and the second nozzle.

14. The substrate processing apparatus according to claim 13, wherein gas is supplied in a flash using the injection device.

15. The substrate processing apparatus according to claim 14, wherein the gas flash-supplied from the injection device has an average flow velocity of 10 m / s or more on a predetermined plane parallel to the substrate in the processing container.

16. The substrate processing apparatus according to claim 14, wherein the gas flash-supplied from the injection device has velocity peaks in a flow that spreads radially in five or more different directions on a predetermined plane parallel to the substrate in the processing container.

17. The substrate processing apparatus according to claim 14, further comprising an exhaust device capable of exhausting in such a way as to maintain the pressure of the exhaust section at 300 Pa or less during the flash supply.

18. A substrate processing method comprising: a step of injecting gas onto a substrate from a plurality of injection holes arranged in a direction parallel to the main surface of the substrate on a front surface continuously formed on the side facing the substrate, where each of a first nozzle and a second nozzle extends perpendicularly to the main surface of the substrate facing the edge face of the substrate; and a step of when the direction from the center of the arrangement of the first nozzle and the second nozzle toward the center of the substrate is taken as the reference direction, the angle of the normal of each of the front surfaces at the positions in which the plurality of injection holes are arranged increases with respect to the reference direction in the order of the arrangement of the plurality of injection holes, and among the plurality of injection holes of the first nozzle and the second nozzle, the injection hole closest to the other nozzle of the first nozzle or the second nozzle, which is formed on substantially the same tangent plane, injects gas substantially parallel to each other.

19. A method for manufacturing a semiconductor device, comprising: a step of injecting gas onto a substrate from a plurality of injection holes arranged in a direction parallel to the main surface of the substrate on a front surface continuously formed on the side facing the substrate, where each of a first nozzle and a second nozzle extends perpendicularly to the main surface of the substrate facing the edge face of the substrate; and a step of, when the direction from the center of the arrangement of the first nozzle and the second nozzle toward the center of the substrate is taken as the reference direction, the angle of the normal of each of the front surfaces at the positions where the plurality of injection holes are arranged increases with respect to the reference direction in the order of the arrangement of the plurality of injection holes, and among the plurality of injection holes of the first nozzle and the second nozzle, the injection hole closest to the other nozzle of the first nozzle or the second nozzle, which is formed on substantially the same tangent plane, injects gas substantially parallel to each other.

20. A program that causes a computer in a substrate processing device to execute the following steps: a first nozzle and a second nozzle, each extending perpendicularly to the main surface of the substrate and facing the edge face of the substrate, inject gas onto the substrate from a plurality of injection holes arranged parallel to the main surface of the substrate on a front surface continuously formed on the side facing the substrate; and, with the direction from the center of the arrangement of the first nozzle and the second nozzle toward the center of the substrate as the reference direction, the angle of the normal of each of the front surfaces at the positions where the plurality of injection holes are arranged increases with respect to the reference direction in the order of the arrangement of the plurality of injection holes, and among the plurality of injection holes of the first nozzle and the second nozzle, the injection hole closest to the other nozzle of the first nozzle or the second nozzle, which is formed on substantially the same tangent plane, injects gas substantially parallel to each other.

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