Semiconductor manufacturing equipment

Abstract

To provide semiconductor manufacturing equipment that can properly manage heater lifespan. [Solution] According to the embodiment, the semiconductor manufacturing apparatus 1 includes a chamber 10, a susceptor 13 on which a wafer 100 can be placed, a rotating body 12 that rotates the susceptor about a predetermined central axis, a first radiation thermometer 50 provided above the chamber for measuring the temperature of a first temperature measurement position M1 of the wafer, a second radiation thermometer 51 provided above the chamber adjacent to the first radiation thermometer for measuring the temperature of a second temperature measurement position M2 of the wafer, a first heater 14 for heating the central region of the wafer and a second heater 15 for heating the outer region of the wafer, and a control unit for controlling the power applied to the first heater and the second heater. The second distance from the central axis to the second temperature measurement position is longer than the first distance from the central axis to the first temperature measurement position and shorter than 0.8 times the wafer radius.

Description

[Technical Field]

[0001] Embodiments of the present invention relate to semiconductor manufacturing equipment. [Background technology]

[0002] In semiconductor manufacturing equipment, properly monitoring the temperature of the semiconductor substrate (hereinafter also referred to as "wafer") and controlling it using heating systems such as heaters is a crucial technology for stable operation of the equipment and obtaining high-quality wafers. For example, in a reactor composed of multiple heaters, such as a CVD (Chemical Vapor Deposition) apparatus, high-quality wafers can be provided by adjusting the output balance of each heater. However, in conventional semiconductor manufacturing equipment that measures the temperature of the wafer and adjusts the heater output to reach a predetermined wafer temperature, the output balance of each heater differs depending on the wafer temperature measurement location, making it difficult to properly manage the heater lifespan.

[0003] For example, Patent Document 1 discloses a temperature measurement method that adjusts the reading speed according to the wafer rotation speed in order to avoid interference caused by orientation flats (hereinafter also referred to as "orientation flats") present on wafers of 6 inches or less when measuring the temperature at the outer edge of the wafer. However, Patent Document 1 does not mention the temperature measurement position on the outer edge.

[0004] Furthermore, for example, Patent Document 2 discloses a temperature measurement method that uses the arithmetic mean of wafer temperatures based on two measurement means as a countermeasure when the positional relationship between the wafer and the susceptor is misaligned. However, Patent Document 2 does not mention the relationship between the temperature measurement position and the heating system such as a heater. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2019-106462 [Patent Document 2] Japanese Patent Publication No. 2006-303289 [Overview of the project] [Problems that the invention aims to solve]

[0006] This invention has been made in view of these points. Specifically, the object of this invention is to provide a semiconductor manufacturing apparatus that can control the temperature measurement position of a wafer and appropriately manage the power applied to a heater. [Means for solving the problem]

[0007] According to a first aspect of the present invention, a semiconductor manufacturing apparatus includes a chamber, a susceptor provided in the chamber and capable of mounting a wafer on its upper surface, a rotating body provided in the chamber for rotating the susceptor about a predetermined central axis, a first radiation thermometer provided above the chamber for measuring the temperature of a first temperature measurement position of a wafer mounted on the susceptor, a second radiation thermometer provided above the chamber adjacent to the first radiation thermometer for measuring the temperature of a second temperature measurement position of a wafer mounted on the susceptor, a first heater provided below the susceptor for heating the central region of the wafer and a second heater for heating the outer region of the wafer, and a control unit that controls the power applied to the first heater and the second heater, respectively, in order to adjust the first and second temperature measurement positions of the wafer to predetermined temperatures based on temperature measurement data from the first and second radiation thermometers. The second distance from the central axis to the second temperature measurement position is longer than the first distance from the central axis to the first temperature measurement position and shorter than 0.8 times the radius of the wafer. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a semiconductor manufacturing apparatus that can control the wafer temperature measurement position and appropriately manage the power applied to the heater. Furthermore, the present invention can provide a semiconductor manufacturing apparatus that can suppress wafer deformation due to temperature variations within the wafer surface. [Brief explanation of the drawing]

[0009] [Figure 1] FIG. 1 is a cross-sectional view showing an example of the configuration of a semiconductor manufacturing apparatus according to the first embodiment. [Figure 2] FIG. 2 is a block diagram showing an example of the functional configuration of wafer temperature control in a control unit included in the semiconductor manufacturing apparatus according to the first embodiment. [Figure 3] FIG. 3 is a plan view of a susceptor in a state where a wafer is placed in the semiconductor manufacturing apparatus according to the first embodiment. [Figure 4] FIG. 4 is a plan view of a first heater and a second heater included in the semiconductor manufacturing apparatus according to the first embodiment. [Figure 5] FIG. 5 is a cross-sectional view of a susceptor and a wafer showing the temperature measurement positions of a first radiation thermometer and a second radiation thermometer in a comparative example. [Figure 6] FIG. 6 is a cross-sectional view of a susceptor and a wafer showing the temperature measurement positions of a first radiation thermometer and a second radiation thermometer in an example of the first embodiment. [Figure 7] FIG. 7 is a cross-sectional view showing the relationship between the temperature measurement positions of a first radiation thermometer and a second radiation thermometer in a comparative example and the radiant heat of a first heater and a second heater. [Figure 8] FIG. 8 is a diagram showing the temperature profile of a wafer and the skin power supplied to a first heater and a second heater in a comparative example. [Figure 9] FIG. 9 is a cross-sectional view showing the relationship between the temperature measurement positions of a first radiation thermometer and a second radiation thermometer in an example of the first embodiment and the radiant heat of a first heater and a second heater. [Figure 10] FIG. 10 is a diagram showing the temperature profile of a wafer and the skin power supplied to a first heater and a second heater in an example of the first embodiment. [Figure 11] FIG. 11 is a graph showing the relationship between the ratio of the wafer radius at the temperature measurement position M2 and the heater output balance ratio. [Figure 12] FIG. 12 is a cross-sectional view of a susceptor, a first heater, a second heater, and a wafer showing the relationship between the temperature measurement positions of a first radiation thermometer and a second radiation thermometer and the first heater and the second heater in a comparative example. [Figure 13]Figure 13 is a cross-sectional view of the susceptor, first heater, second heater, and wafer, showing the relationship between the temperature measurement positions of the first and second radiation thermometers and the first and second heaters in an embodiment of the second embodiment. [Figure 14] Figure 14 is a cross-sectional view of the susceptor and wafer showing the relationship between the temperature measurement positions of the first and second infrared thermometers and the wafer warpage in the comparative example. [Figure 15] Figure 15 is a cross-sectional view of the susceptor and wafer showing the relationship between the temperature measurement positions of the first and second radiation thermometers and the wafer warp in an embodiment of the third embodiment. [Modes for carrying out the invention]

[0010] Embodiments are described below with reference to the drawings. The embodiments illustrate devices and methods for realizing the technical idea of ​​the invention. The drawings are schematic or conceptual, and the dimensions and proportions of each drawing are not necessarily the same as those of reality. The technical idea of ​​the present invention is not defined by the shape, structure, arrangement, etc. of the components.

[0011] In the following embodiments, we will describe the case where the semiconductor manufacturing apparatus is a single-wafer type CVD apparatus. Note that the semiconductor manufacturing apparatus is not limited to a CVD apparatus. The semiconductor manufacturing apparatus may be an annealing apparatus or an epitaxial growth apparatus. This embodiment can be applied as long as the semiconductor manufacturing apparatus has a single-wafer type substrate heating mechanism.

[0012] 1. First Embodiment 1.1 Device configuration First, with reference to Figure 1, an example of the overall configuration of semiconductor manufacturing equipment 1 will be described. Figure 1 is a cross-sectional view showing an example of the configuration of semiconductor manufacturing equipment 1.

[0013] In the following description, with the semiconductor manufacturing equipment 1 installed, the direction of gravity is defined as "down," and the opposite direction is defined as "up." In the cross-sectional view of the semiconductor manufacturing equipment 1, the bottom of the drawing shows the bottom of the semiconductor manufacturing equipment 1, and the top of the drawing shows the top of the semiconductor manufacturing equipment 1. Furthermore, in the semiconductor manufacturing equipment 1, the vertical direction is defined as the Z direction. The direction intersecting the Z direction is defined as the X direction, and the direction intersecting both the X and Z directions is defined as the Y direction. The XY plane defined by the X and Y directions is parallel to the ground surface of the semiconductor manufacturing equipment 1.

[0014] As shown in Figure 1, the semiconductor manufacturing apparatus 1 includes a chamber 10, an exhaust port 11, a rotating body 12, a susceptor 13, a first heater 14, a second heater 15, a gate valve 16, a gas supply unit 20, a rectifier plate 21, a first partition plate 22, a second partition plate 23, a third partition plate 24, gas supply nozzles 31, 32, and 33, a temperature measuring nozzle 34, a nozzle cap 35, a temperature measuring window 41, a first radiation thermometer 50, a second radiation thermometer 51, and a control unit 60.

[0015] Chamber 10 is a housing used in CVD. Chamber 10 is made of stainless steel, for example. Other materials may be used for Chamber 10. For example, Chamber 10 is provided with a gate valve 16. Wafers 100 are transported into Chamber 10 from outside through the gate valve 16. Wafers 100 may be made of silicon (Si) or other substrates such as silicon carbide (SiC). Chamber 10 can be controlled to an appropriate temperature by a temperature control mechanism (not shown) to suppress the adhesion of reaction products to the inner wall surface, for example. For example, Chamber 10 is cooled by a refrigerant (e.g., water) or a cooling gas. An exhaust port 11 is provided at the bottom of Chamber 10. The exhaust port 11 is connected to an exhaust device (not shown). The gas supplied into Chamber 10 is exhausted to the exhaust device through the exhaust port 11. For example, the inside of Chamber 10 is maintained at a reduced pressure (lower than atmospheric pressure). The pressure inside Chamber 10 may be atmospheric pressure (normal pressure).

[0016] The rotating body 12 is provided on the bottom surface of the chamber 10. The rotating body 12 is rotatable about the axis of its central axis CA, which extends in the Z direction, by a rotation mechanism (not shown). For example, the rotating body 12 is capable of high-speed rotation of 600 rpm or more.

[0017] The susceptor 13 is mounted on the rotating body 12. For example, the susceptor 13 has a disc shape. The center of the susceptor 13 (the central axis extending in the Z direction) coincides with the central axis CA of the rotating body 12. The upper surface of the susceptor 13 is provided with a recess (counterbor) for placing the wafer 100. The wafer 100 is placed on the recess of the susceptor 13. Preferably, the wafer 100 is placed so that its center on the XY plane coincides with the central axis CA. The semiconductor manufacturing apparatus 1 rotates the wafer 100 by rotating the rotating body 12. The susceptor 13 is made of carbon, for example. Alternatively, the susceptor 13 may be made of a material with a heat resistance of 1700°C or higher, such as SiC (silicon carbide), TaC (tantalum carbide), W (tungsten), or Mo (molybdenum).

[0018] Inside the rotating body 12 are a first heater 14 and a second heater 15. The first heater 14 has a disc shape centered on the central axis CA. The second heater 15 has an annular shape centered on the central axis CA. On the same XY plane, the second heater 15 is arranged to surround the outer circumference of the first heater 14. The configuration of the heaters that heat the wafer 100 (susceptor 13) is not limited to this. The heater may be divided into three or more blocks. The heater may be resistance heating, lamp heating, or induction heating. The first heater 14 and the second heater 15 heat the susceptor 13 (and wafer 100) from the back surface (bottom surface) of the susceptor 13. For example, if the semiconductor manufacturing apparatus 1 is an epitaxial growth apparatus for SiC, the wafer 100 is heated to 1500°C or higher. The first heater 14 primarily heats the central region of the susceptor 13 (wafer 100). The second heater 15 primarily heats the outer peripheral region of the susceptor 13 (wafer 100). The temperatures of the first heater 14 and the second heater 15 are individually controlled by the control unit 60.

[0019] The gas supply unit 20 is installed, for example, on top of the chamber 10. For example, the gas supply unit 20 has a cylindrical shape. For example, the inner diameter of the gas supply unit 20 is larger than the diameter of the wafer 100 and smaller than the inner diameter of the chamber 10. The gas supply unit 20 supplies various gases into the chamber 10. In the example shown in Figure 1, gases A, B, C, and D are supplied to the gas supply unit 20. The type and number of gases supplied to the gas supply unit 20 depend on the film deposition process. Gases A, B, C, and D supplied from the gas supply unit 20 into the chamber 10 flow toward the wafer 100. The gas supply unit 20 can be controlled to an appropriate temperature by a temperature control mechanism (not shown) to suppress temperature rise of the supplied gases and adhesion of reaction products to the gas supply unit 20. For example, the gas supply unit 20 is cooled by a refrigerant (e.g., water) or a cooling gas.

[0020] The rectifier plate 21 rectifies the fluid (gas) supplied from the gas supply unit 20 into the chamber 10. The rectifier plate 21 is provided at the bottom of the gas supply unit 20. For example, quartz is used for the rectifier plate 21. However, other materials such as stainless steel may be used for the rectifier plate 21. The rectifier plate 21 has, for example, a disc shape. For example, the diameter of the rectifier plate 21 is larger than the diameter of the wafer 100. The lower surface of the rectifier plate 21 faces the upper surface of the wafer 100 (susceptor 13). It is preferable that the rectifier plate 21 be positioned so that its lower surface is parallel to the wafer 100 placed on the susceptor 13. The rectifier plate 21 has a plurality of through holes extending in the Z direction in order to supply gas into the chamber 10.

[0021] The first partition plate 22 is provided spaced apart in the Z direction between the rectifier plate 21 and the top plate of the gas supply unit 20. The first partition plate 22 has a plurality of through holes for the gas supply nozzles 31, 32, and 33, and the temperature measuring nozzle 34 to pass through. A first gas region 25 is provided between the rectifier plate 21 and the first partition plate 22. Gas D is supplied to the first gas region 25. For example, gas D is purge gas.

[0022] The second partition plate 23 is provided spaced apart in the Z direction between the first partition plate 22 and the top plate of the gas supply unit 20. The second partition plate 23 has a plurality of through holes for the gas supply nozzles 32 and 33 and the temperature measuring nozzle 34 to pass through. A second gas region 26 is provided between the first partition plate 22 and the second partition plate 23. Gas C is supplied to the second gas region 26. For example, gas C is a CVD process gas.

[0023] The third partition plate 24 is provided spaced apart in the Z direction between the second partition plate 23 and the top plate of the gas supply unit 20. The third partition plate 24 has a plurality of through holes for the gas supply nozzle 33 and the temperature measuring nozzle 34 to pass through. A third gas region 27 is provided between the second partition plate 23 and the third partition plate 24. Gas B is supplied to the third gas region 27. For example, gas B is a CVD process gas. A fourth gas region 28 is provided between the third partition plate 24 and the top plate of the gas supply unit 20. Gas A is supplied to the fourth gas region 28. For example, gas A is a purge gas. The number of partition plates provided in the gas supply unit 20 can be appropriately set according to the type of gas to be supplied.

[0024] The gas supply nozzle 31 extends in the Z direction. The gas supply nozzle 31 penetrates the rectifier plate 21 and the first partition plate 22. The gas C in the second gas region 26 is supplied into the chamber 10 via the gas supply nozzle 31.

[0025] The gas supply nozzle 32 extends in the Z direction. The gas supply nozzle 32 penetrates the rectifier plate 21, the first partition plate 22, and the second partition plate 23. Gas B in the third gas region 27 is supplied into the chamber 10 via the gas supply nozzle 32.

[0026] The gas supply nozzle 33 extends in the Z direction. The gas supply nozzle 33 penetrates the rectifier plate 21, the first partition plate 22, the second partition plate 23, and the third partition plate 24. Gas A in the fourth gas region 28 is supplied into the chamber 10 via the gas supply nozzle 33.

[0027] A gap is provided between the through-hole of the rectifier plate 21 and the gas supply nozzles 31, 32, and 33, as well as the temperature measuring nozzle 34. The gas D in the first gas region 25 is supplied into the chamber 10 through the gaps with each nozzle.

[0028] The temperature-measuring nozzle 34 is used to measure the temperature of the wafer 100 using the first radiation thermometer 50 and the second radiation thermometer 51. The temperature-measuring nozzle 34 extends in the Z direction. The temperature-measuring nozzle 34 penetrates the rectifier plate 21, the first partition plate 22, the second partition plate 23, and the third partition plate 24. In the example shown in Figure 1, two temperature-measuring nozzles 34 are provided, corresponding to the first radiation thermometer 50 and the second radiation thermometer 51. Note that the number of temperature-measuring nozzles 34 is not limited to two. For example, one temperature-measuring nozzle 34 may be provided, corresponding to the first radiation thermometer 50 and the second radiation thermometer 51, or three or more temperature-measuring nozzles 34 may be provided to change the temperature measurement position.

[0029] A nozzle cap 35 is provided at the upper end of each temperature-measuring nozzle 34. For example, quartz is used for the nozzle cap 35. The nozzle cap 35 can be made of any material that can transmit the wavelength range of light measured by the first radiation thermometer 50 and the second radiation thermometer 51. The nozzle cap 35 may also be omitted. In this case, gas A in the fourth gas region 28 can be supplied into the chamber 10 via the gas supply nozzle 33 and the temperature-measuring nozzle 34.

[0030] A temperature-measuring window 41 is provided in a part of the top plate (upper surface) of the gas supply unit 20. The number and shape of the temperature-measuring windows 41 are arbitrary. The temperature-measuring windows 41 allow reflected light and thermal radiation light (infrared light) from the wafer 100 to pass through. The temperature-measuring windows 41 are used for measuring the temperature of the wafer 100 using the first radiation thermometer 50 and the second radiation thermometer 51. For example, quartz can be used for the temperature-measuring windows 41. In addition, the temperature-measuring windows 41 can be made of any material that can transmit the wavelength range of light measured by the first radiation thermometer 50 and the second radiation thermometer 51.

[0031] The first radiation thermometer 50 and the second radiation thermometer 51 are pyrometers. The first radiation thermometer 50 and the second radiation thermometer 51 are positioned above the temperature-measuring window 41. The first radiation thermometer 50 and the second radiation thermometer 51 measure the temperature of the wafer 100 through the temperature-measuring window 41, the nozzle cap 35, and the temperature-measuring nozzle 34. The first radiation thermometer 50 and the second radiation thermometer 51 measure the temperature of the wafer 100 non-contact based on the result of receiving thermal radiation light (infrared light) emitted from the surface of the wafer 100. The measurement principle is based on Planck's law. The first radiation thermometer 50 and the second radiation thermometer 51 are arranged side by side in the radial direction of the wafer 100, for example. The first radiation thermometer 50 is positioned closer to the center (central axis CA) of the wafer 100 than the second radiation thermometer 51. The first radiation thermometer 50 is used to measure the temperature of the inner region of the wafer 100. The second radiation thermometer 51 is used to measure the temperature of the outer region of the wafer 100. In other words, the temperature measurement position of the wafer 100 by the first radiation thermometer 50 is closer to the center of the wafer 100 (central axis CA) than the temperature measurement position of the wafer 100 by the second radiation thermometer 51. Alternatively, one radiation thermometer may be moved radially across the wafer 100 to measure the temperature of both the inner and outer regions of the wafer 100.

[0032] The control unit 60 controls the entire semiconductor manufacturing apparatus 1. For example, the control unit 60 includes a CPU (Central Processing Unit) that controls the semiconductor manufacturing apparatus 1 and a memory unit that stores various programs and process recipes. The control unit 60 executes the film deposition process based on the process recipe. More specifically, the control unit 60 controls the rotation mechanism of the rotating body 12. The control unit 60 controls the first heater 14 and the second heater 15 based on the temperature measurement results from the first radiation thermometer 50 and the second radiation thermometer 51. The control unit 60 controls the supply of gas to the chamber 10. The control unit 60 controls the pressure inside the chamber 10 by controlling an exhaust device (not shown). The control unit 60 controls the gate valve 16 and a wafer transport mechanism (not shown), etc. As a result, the control unit 60 controls the loading and unloading of wafers 100 into and out of the chamber 10.

[0033] Referring to Figure 2, an example of the functional configuration for temperature control of the wafer 100 in the control unit 60 will be described. Figure 2 is a block diagram showing an example of the functional configuration for temperature control of the wafer 100 in the control unit 60.

[0034] As shown in Figure 2, the control unit 60 includes a first heater control unit 61 and a second heater control unit 62. The functions of the first heater control unit 61 and the second heater control unit 62 are realized, for example, by firmware or a program executed by the control unit 60.

[0035] The first heater control unit 61 controls the power applied to the first heater 14 based on the temperature measurement result of the first radiation thermometer 50 (hereinafter, temperature control based on the temperature measurement result will be referred to as "temperature adjustment control"). The first heater control unit 61 also controls the temperature of the first heater 14 based on a preset heater output (for example, apparent power) (hereinafter, temperature control based on a preset heater output will be referred to as "fixed output control").

[0036] The second heater control unit 62, like the first heater control unit 61, performs temperature control of the second heater 15 based on the temperature measurement results of the second radiation thermometer 51. The second heater control unit 62 also performs fixed output control of the second heater 15.

[0037] 1.2 Planar configuration of the susceptor Next, an example of the planar configuration of the susceptor 13 will be described with reference to Figure 3. Figure 3 is a plan view of the susceptor 13 with the wafer 100 placed on it.

[0038] As shown in Figure 3, a wafer 100 is placed on the susceptor 13. The size of the wafer 100 is, for example, 8 inches. A notch NC is provided on the wafer 100. The notch is provided on silicon wafers of 8 inches or larger. However, the size of the wafer 100 is not limited to 8 inches. The size of the wafer 100 may be 6 inches or less, or 12 inches or larger. For example, if the size of the wafer 100 is 6 inches or less, an orientation flat is provided on the wafer 100.

[0039] The upper surface of the susceptor 13 is provided with a recess (counterbor) for placing the wafer 100. This ensures that the wafer 100 is placed on the susceptor 13 such that its center in the XY plane coincides with the central axis CA. The susceptor 13 may also be provided with recesses corresponding to multiple wafer sizes.

[0040] The radius Rs of susceptor 13 is greater than the radius Rw of wafer 100. In other words, the relationship between the radius Rs of the susceptor and the radius Rw of wafer 100 is Rs > Rw.

[0041] The first radiation thermometer 50 and the second radiation thermometer 51 are installed above the wafer 100 (temperature-measuring window 41). The wafer 100 is rotated by the rotating body 12. Therefore, each of the first radiation thermometer 50 and the second radiation thermometer 51 measures the temperature on a circumference of a circle with a different radius centered on the central axis CA. The rotation period of the wafer 100 and the timing of measurements by the first radiation thermometer 50 and the second radiation thermometer 51 may or may not be synchronized.

[0042] For example, let the temperature measurement position by the first radiation thermometer 50 be M1. The temperature measurement position M1 is located on the circumference with a radius R1 centered on the central axis CA. Similarly, for example, let the temperature measurement position by the second radiation thermometer 51 be M2. The temperature measurement position M2 is located on the circumference with a radius R2 centered on the central axis CA. In other words, the distance from the central axis CA (the center of the wafer 100) to the temperature measurement position M1 is R1, and the distance from the central axis CA (the center of the wafer 100) to the temperature measurement position M2 is R2. In this case, the radius R1 of the temperature measurement position M1, the radius R2 of the temperature measurement position M2, and the radius Rw of the wafer 100 satisfy the relationship 0 ≦ R1 < R2 < Rw. In the present embodiment, in order to suppress the difference in the heater outputs (apparent power) between the first heater 14 and the second heater 15 in the temperature adjustment control, the radius R2 of the temperature measurement position M2 is made larger than the radius R1 of the temperature measurement position M1 and smaller than 0.8 times (0.8Rw) of the radius Rw of the wafer 100. In this case, the radius R1 of the circumference by the temperature measurement position M1, the radius R2 of the circumference by the temperature measurement position M2, and the radius Rw of the wafer 100 satisfy the relationship 0 ≦ R1 < R2 < 0.8Rw. In other words, the distance R2 from the central axis CA (the center of the wafer 100) to the temperature measurement position M2 is longer than the distance R1 from the central axis CA (the center of the wafer 100) to the temperature measurement position M1 and shorter than 0.8 times the radius Rw of the wafer 100.

[0043] 1.3 Planar configuration of the first heater and the second heater Next, referring to FIG. 4, an example of the planar configuration of the first heater 14 and the second heater 15 will be described. FIG. 4 is a plan view of the first heater 14 and the second heater 15.

[0044] As shown in FIG. 4, the first heater 14 and the second heater 15 are arranged concentrically with the central axis CA as the center. The second heater 15 surrounds the outer periphery of the first heater 14. Let the radius of the disk-shaped first heater 14 be Ra. Let the inner diameter of the annular second heater 15 be Rb in and the outer diameter be Rb out The radius Ra of the first heater 14, the inner diameter Rb in and the outer diameter Rb out of the second heater 15 satisfy Ra < Rb in < Rb outare related. The radius Ra of the first heater 14 and the inner diameter Rb of the second heater 15 in are smaller than the radius Rw of the wafer 100. Note that the outer diameter Rb of the second heater 15 out may be smaller than or larger than the radius Rw of the wafer 100. FIG. 4 shows a case where the outer diameter Rb of the second heater 15 out is larger than the radius Rw of the wafer 100.

[0045] 1.4 Specific examples of the relationship between the temperature measurement positions of the first radiation thermometer and the second radiation thermometer and the temperature profile of the wafer Next, referring to FIGS. 5 to 11, specific examples of the relationship between the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the temperature profile of the wafer 100 will be described. FIG. 5 is a cross-sectional view of the susceptor 13 and the wafer 100 showing the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 in the comparative example. FIG. 6 is a cross-sectional view of the susceptor 13 and the wafer 100 showing the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 in the example of the present embodiment. FIG. 7 is a cross-sectional view showing the relationship between the temperature measurement position M1 of the first radiation thermometer 50 and the temperature measurement position M2c of the second radiation thermometer 51 in the comparative example and the radiant heat of the first heater 14 and the second heater 15. FIG. 8 is a diagram showing the temperature profile of the wafer 100 and the skin power supplied to the first heater 14 and the second heater 15 in the comparative example. The unit of the skin power is an arbitrary unit (AU: Arbitrary Unit). FIG. 9 is a cross-sectional view showing the relationship between the temperature measurement position M1 of the first radiation thermometer 50 and the temperature measurement position M2 of the second radiation thermometer 51 in the example of the present embodiment and the radiant heat of the first heater 14 and the second heater 15. FIG. 10 is a diagram showing the temperature profile of the wafer 100 and the skin power supplied to the first heater 14 and the second heater 15 in the example of the present embodiment. The unit of the skin power is an arbitrary unit (AU: Arbitrary Unit). FIG. 11 is a graph showing the relationship between the ratio of the wafer radius Rw at the temperature measurement position M2 and the heater output balance ratio. In the following description, attention will be paid to the temperature measurement position M2 of the second radiation thermometer 51.

[0046] First, the positional relationship between the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 in the comparative examples and the examples of this embodiment and the wafer 100 will be described.

[0047] As shown in FIGS. 5 and 6, the temperature measurement position M1 of the first radiation thermometer 50 in the comparative example is the same as the temperature measurement position M1 in the example. The temperature measurement positions M1 in the comparative example and the example are located on the circumference of a circle with a radius R1 centered on the central axis CA. In other words, the distance from the central axis CA (the center of the wafer 100) to the temperature measurement position M1 in the comparative example and the example is R1. For example, the radius R1 of the temperature measurement position M1 is 0.2 times the radius Rw of the wafer 100 (R1 = 0.2Rw). Note that the radius R1 of the temperature measurement position M1 is not limited to R1 = 0.2Rw.

[0048] As shown in FIG. 5, let the temperature measurement position of the second radiation thermometer 51 in the comparative example be M2c. The temperature measurement position M2c is located on the circumference of a circle with a radius R2c centered on the central axis CA. In other words, the distance from the central axis CA (the center of the wafer 100) to the temperature measurement position M2c in the comparative example is R2c. The temperature measurement position M2c is provided at a position where 0.8Rw < R2c < Rw. That is, the temperature measurement position M2c is provided near the outer periphery of the wafer 100.

[0049] On the contrary, as shown in FIG. 6, the temperature measurement position M2 of the second radiation thermometer 51 in the example is located on the circumference of a circle with a radius R2 centered on the central axis CA. In other words, the distance from the central axis CA (the center of the wafer 100) to the temperature measurement position M2 in the example is R2. The temperature measurement position M2 is provided at a position where R1 < R2 < 0.8Rw.

[0050] Next, the relationship between the temperature measurement positions M1 and M2c in the comparative example and the radiant heat of the first heater 14 and the second heater 15 will be described.

[0051] As shown in Figure 7, a first heater 14 is positioned below the temperature measurement position M1 of the wafer 100 via a susceptor 13. The second heater 15 is located away from the temperature measurement position M1 in a plan view from the Z direction. Therefore, at the temperature measurement position M1, the wafer 100 (with the susceptor 13) is mainly heated by the thermal radiation H1a from the first heater 14. Consequently, the influence of the thermal radiation H2a from the second heater 15 on the temperature measurement position M1 is smaller than that of the thermal radiation H1a from the first heater 14.

[0052] Below the temperature measurement position M2c of the wafer 100, a second heater 15 is positioned via a susceptor 13. The first heater 14 is located away from the temperature measurement position M2c in a plan view from the Z direction. Therefore, at the temperature measurement position M2c, the wafer 100 (with the susceptor 13) is mainly heated by the thermal radiation H2b from the second heater 15. Consequently, the influence of the thermal radiation H1b from the first heater 14 on the temperature measurement position M2c is smaller than that of the thermal radiation H2b from the second heater 15.

[0053] Next, the temperature profile of the wafer 100 and the apparent power supplied to the first heater 14 and the second heater 15 in the comparative example will be described. The example shown in Figure 8 shows a case where the wafer 100 is heated to temperature TMP1 at temperature measurement position M1 and heated to temperature TMP2 at temperature measurement position M2. In the example shown in Figure 8, temperature TMP2 is set to a temperature slightly lower than temperature TMP1. Note that temperatures TMP1 and TMP2 may be the same, or temperature TMP2 may be higher than temperature TMP1.

[0054] As shown in Figure 8, for example, during the heating period (the period from time t0 to t1) and the cooling period (the period from time t2 to t3) of the wafer 100, there is a large discrepancy between the set temperature and the measured temperature. Therefore, the control unit 60 controls the first heater 14 and the second heater 15 with fixed output to prevent excessive apparent power from being supplied to them. Alternatively, the control unit 60 may control the temperature of the first heater 14 and the second heater 15 based on a preset heating rate or the like, instead of fixed output control.

[0055] In the example shown in Figure 8, during the period from time t0 to t1, the control unit 60 supplies apparent power to the first heater 14 and the second heater 15 in a stepwise increasing manner using fixed output control. As a result, the wafer 100 is gradually heated up. The control unit 60 supplies, for example, more than three times the apparent power of the first heater 14 to the second heater 15. Hereinafter, the ratio of apparent power supplied to the second heater 15 to apparent power supplied to the first heater 14 is defined as the heater output balance ratio. The heater output balance ratio during the period from time t0 to t1 is approximately 3.

[0056] During the period from time t1 to t2, the control unit 60 (first heater control unit 61) maintains the temperature of the wafer 100 at measurement position M1 at temperature TMP1 based on the temperature measurement result of the first radiation thermometer 50. Similarly, the control unit 60 (second heater control unit 62) maintains the temperature of the wafer 100 at measurement position M2c at temperature TMP2 based on the temperature measurement result of the second radiation thermometer 51. In other words, the first heater 14 and the second heater 15 are temperature-controlled. At this time, the control unit 60 supplies, for example, the second heater 15 with approximately 2.4 times the apparent power of the first heater 14. That is, the heater output balance ratio is approximately 2.4.

[0057] During the period from time t2 to t3, the temperature of the wafer 100 is reduced. The control unit 60 controls the first heater 14 and the second heater 15 to a fixed output.

[0058] Next, the relationship between the temperature measurement positions M1 and M2 in the embodiment and the radiant heat of the first heater 14 and the second heater 15 will be explained.

[0059] As shown in Figure 9, similar to the comparative example described using Figure 7, a first heater 14 is positioned below the temperature measurement position M1 of the wafer 100 via a susceptor 13. The second heater 15 is located away from the temperature measurement position M1 in a plan view from the Z direction. Therefore, at the temperature measurement position M1, the wafer 100 (susceptor 13) is mainly heated by the thermal radiation H1a from the first heater 14. Consequently, the influence of the thermal radiation H2a from the second heater 15 on the temperature measurement position M1 is smaller than that of the thermal radiation H1a from the first heater 14.

[0060] In this embodiment, the temperature measurement position M2 is located further inside the wafer 100 than the temperature measurement position M2c in the comparative example. As a result, the distance from the edge of the first heater 14 to the temperature measurement position M2 is shorter than the distance from the edge of the first heater 14 to the temperature measurement position M2c. In the example shown in Figure 9, the first heater 14 and the second heater 15 are located near the lower part of the temperature measurement position M2 on the wafer 100, via a susceptor 13. Therefore, at the temperature measurement position M2, the wafer 100 (with the susceptor 13) is heated by the thermal radiation H1b from the first heater 14 and the thermal radiation H2b from the second heater 15. The influence of the thermal radiation H1b from the first heater 14 on the temperature measurement position M2 is greater than the influence of the thermal radiation H1b from the first heater 14 on the temperature measurement position M2c in the comparative example. Furthermore, the influence of thermal radiation H2b from the second heater 15 on the temperature measurement position M2 is smaller than the influence of thermal radiation H2b from the second heater 15 on the temperature measurement position M2c in the comparative example.

[0061] For example, if the temperature measurement position M2 in the embodiment and the temperature measurement position M2c in the comparative example described using Figure 7 are controlled to the same temperature, the temperature measurement position M2 will be more strongly affected by the thermal radiation H1b from the first heater 14 than the temperature measurement position M2c. Therefore, the temperature of the second heater 15 used to heat the temperature measurement position M2 will be lower in the embodiment than in the comparative example. That is, the apparent power supplied to the second heater 15 will be lower in the embodiment than in the comparative example. When the apparent power supplied to the second heater 15 is reduced, the influence of the thermal radiation H2a from the second heater 15 on the temperature measurement position M1 will be smaller than in the comparative example. Therefore, the temperature of the first heater 14 used to heat the temperature measurement position M1 will be higher in the embodiment than in the comparative example. That is, the apparent power supplied to the first heater 14 will be greater in the embodiment than in the comparative example. Therefore, when the temperature measurement position is moved from M2c to M2, the apparent power supplied to the first heater 14 tends to increase, while the apparent power supplied to the second heater 15 tends to decrease.

[0062] Next, the temperature profile of the wafer 100 and the apparent power supplied to the first heater 14 and the second heater 15 in the embodiment will be described. The example shown in Figure 10, similar to the comparative example described using Figure 8, shows the case where the wafer 100 is heated to temperature TMP1 at temperature measurement position M1 and heated to temperature TMP2 at temperature measurement position M2.

[0063] As shown in Figure 10, the temperature of the wafer 100 is increased during the period from time t0 to t1. In this embodiment, compared to the comparative example, the apparent power supplied to the first heater 14 is increased, and the apparent power supplied to the second heater 15 is decreased. The control unit 60 supplies approximately 2.1 times the apparent power of the first heater 14 to the second heater 15 by fixed output control. That is, the heater output balance ratio is approximately 2.1. In this embodiment, the heater output balance ratio is lower than in the comparative example.

[0064] During the period from time t1 to t2, the control unit 60 (first heater control unit 61) maintains the temperature of the wafer 100 at measurement position M1 at temperature TMP1 based on the temperature measurement result of the first radiation thermometer 50. Similarly, the control unit 60 (second heater control unit 62) maintains the temperature of the wafer 100 at measurement position M2 at temperature TMP2 based on the temperature measurement result of the second radiation thermometer 51. In other words, the first heater 14 and the second heater 15 are temperature-controlled. In this embodiment, the control unit 60 supplies approximately the same apparent power to the first heater 14 and the second heater 15. That is, the heater output balance ratio is approximately 1. In this case, the total apparent power supplied to the first heater 14 and the second heater 15 is reduced compared to the comparative example described using Figure 8.

[0065] During the period from time t2 to t3, the temperature of the wafer 100 is reduced. The control unit 60 controls the first heater 14 and the second heater 15 to a fixed output.

[0066] Next, we will explain the relationship between the ratio of the temperature measurement position M2 to the wafer radius Rw and the heater output balance ratio.

[0067] As shown in Figure 11, the heater output balance ratio tends to increase as the ratio of the temperature measurement position M2 to the wafer radius Rw increases. In other words, the closer the radius R2 of the temperature measurement position M2 is to the radius Rw of the wafer 100, the greater the apparent power supplied to the second heater 15 is compared to the apparent power supplied to the first heater 14.

[0068] For example, in order to suppress deformation due to temperature variations within the plane of the wafer 100 and appropriately manage the lifetimes of the first heater 14 and the second heater 15, it is preferable to set the upper limit of the heater output balance ratio to less than 2. As shown in FIG. 11, when the heater output balance ratio is 2, the ratio of the measurement temperature position M2 to the wafer radius Rw is 0.81. Therefore, it is preferable to set the measurement temperature position M2 to less than 0.8Rw (0.8 times the radius Rw). Accordingly, the radius R2 of the measurement temperature position M2 is set such that R1 < R2 < 0.8Rw. Similarly, it is more preferable to set the lower limit of the heater output balance ratio to greater than 0.5. As shown in FIG. 11, when the heater output balance ratio is 0.5, the ratio of the measurement temperature position M2 to the wafer radius Rw is 0.49. Therefore, it is preferable to set the measurement temperature position M2 to greater than 0.5Rw (0.5 times the radius Rw). Accordingly, when the radius R1 of the measurement temperature position M1 is less than 0.5Rw (R1 < 0.5Rw), the radius R2 of the measurement temperature position M2 is set such that 0.5Rw < R2 < 0.8Rw.

[0069] 1.5 Effects according to this embodiment For example, if the heater output balance ratio exceeds 2, the heating balance within the plane of the wafer 100 deteriorates, and the temperature variation within the plane increases. When the temperature variation increases, deformation, distortion, crystal defects, etc. of the wafer 100 are likely to occur. Also, since a larger skin effect power than that of the first heater 14 is supplied to the second heater 15, the load on the second heater 15 increases. As a result, the lifetime of the second heater 15 becomes shorter compared to the first heater 14. When the variation in lifetime between the first heater 14 and the second heater 15 becomes large, maintenance (component replacement) will be performed at different timings for each. For this reason, the operating time of the semiconductor manufacturing apparatus 1 becomes shorter, and the processing capacity decreases. Also, when the lifetime becomes shorter and the maintenance frequency increases, the maintenance cost increases.

[0070] In contrast, in the configuration according to this embodiment, the temperature measurement position M2 of the second radiation thermometer 51 can be set such that R1 < R2 < 0.8Rw. That is, the radius R2 of the temperature measurement position M2 can be made larger than the radius R1 of the temperature measurement position M1 and smaller than 0.8 times the radius Rw of the wafer 100 (0.8Rw). Thereby, the heater output balance ratio can be suppressed to less than 2. Thereby, the heater life can be appropriately managed.

[0071] Furthermore, in the configuration according to this embodiment, when the radius R1 of the temperature measurement position M1 of the first radiation thermometer 50 is smaller than 0.5Rw (R1 < 0.5Rw), the radius R2 of the temperature measurement position M2 can be set such that 0.5Rw < R2 < 0.8Rw. That is, the radius R2 of the temperature measurement position M2 can be made larger than 0.5 times the radius Rw of the wafer 100 (0.5Rw) and smaller than 0.8 times the radius Rw of the wafer 100 (0.8Rw). Thereby, the heater output balance ratio can be controlled to be greater than 0.5 and less than 2. Thereby, the heater life can be appropriately managed.

[0072] 2. Second Embodiment Next, the second embodiment will be described. In the second embodiment, a case where the setting range of the temperature measurement position M2 is determined based on the positional relationship with the first heater 14 and the second heater 15 will be described. Hereinafter, the description will focus on the differences from the first embodiment.

[0073] 2.1 Relationship between the temperature measurement positions of the first and second radiation thermometers and the first and second heaters First, referring to FIGS. 12 and 13, the relationship between the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the first heater 14 and the second heater 15 will be described. FIG. 12 is a cross-sectional view of the susceptor 13, the first heater 14, the second heater 15, and the wafer 100 showing the relationship between the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the first heater 14 and the second heater 15 in the comparative example. FIG. 13 is a cross-sectional view of the susceptor 13, the first heater 14, the second heater 15, and the wafer 100 showing the relationship between the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the first heater 14 and the second heater 15 in the example of the present embodiment. In the following description, the relationship between the temperature measurement position M2 of the second radiation thermometer 51 and the position of the second heater 15 will be focused on and described.

[0074] First, the relationship between the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the positions of the first heater 14 and the second heater in the comparative example will be described.

[0075] As shown in FIG. 12, the temperature measurement position M1 of the first radiation thermometer 50 in the comparative example is provided above the first heater 14. In the example shown in FIG. 12, similar to FIGS. 5 and 6, the radius R1 of the temperature measurement position M1 is 0.2 times the radius Rw of the wafer 100 (R1 = 0.2Rw). Also, the radius Ra of the first heater 14 is, for example, 0.75 times the radius Rw of the wafer 100 (Ra = 0.75Rw). In a plan view seen from the Z direction, the radius R1 of the temperature measurement position M1 and the radius Ra of the first heater 14 are in the relationship of 0 ≦ R1 < Ra. In other words, the distance R1 from the central axis CA to the temperature measurement position M1 is shorter than the distance (radius) Ra from the central axis CA to the outer periphery of the first heater 14.

[0076] Also, the temperature measurement position M2c of the second radiation thermometer 51 in the comparative example is arranged above the second heater 15. In the example shown in FIG. 12, the radius R2c of the temperature measurement position M2c is provided at a position 0.9 times the radius Rw of the wafer 100 (R2c = 0.9Rw). Also, for example, the inner diameter Rb of the second heater 15 in is provided at a position 0.8 times the radius Rw of the wafer 100 (Rb in(=0.8Rw). In a plan view seen from the Z direction, the radius R2c of the temperature measurement position M2c and the inner diameter Rb of the second heater 15 in and the outer diameter Rb out are such that Rb in <R2c<Rb out That is, the distance R2c from the central axis CA to the temperature measurement position M2c is longer than the distance (inner diameter) Rb from the central axis CA to the inner circumference of the second heater 15 in (=0.8Rw) and shorter than the distance (outer diameter) Rb from the central axis CA to the outer circumference of the second heater 15 out In this case, similar to the comparative example of the first embodiment, at the temperature measurement position M2c, the wafer 100 is mainly heated by the thermal radiation light H2b from the second heater 15 via the susceptor 13. The influence of the thermal radiation light H1b from the first heater 14 on the temperature measurement position M2c is smaller than that of the thermal radiation light H2b from the second heater 15.

[0077] Next, the positional relationship between the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the first heater 14 and the second heater in the example of this embodiment will be described.

[0078] As shown in FIG. 13, the temperature measurement position M1 of the first radiation thermometer 50 in the example is provided above the first heater 14, similar to the comparative example. In a plan view seen from the Z direction, the radius R1 of the temperature measurement position M1 and the radius Ra of the first heater 14 are in the relationship of 0≦R1<Ra.

[0079] Also, the temperature measurement position M2 of the second radiation thermometer 51 in the example is provided inside the inner diameter Rb of the second heater 15 in That is, at a position closer to the first heater 14. In a plan view seen from the Z direction, the radius R1 of the temperature measurement position M1, the radius R2 of the temperature measurement position M2, and the inner diameter Rb of the second heater 15 in are such that R1<R2<Rb in That is, the distance R2 from the central axis CA to the temperature measurement position M2 is longer than the distance (radius) Ra from the central axis CA to the outer circumference of the first heater 14 and the distance (inner diameter) Rb from the central axis CA to the inner circumference of the second heater 15 inis shorter. In the example shown in FIG. 13, similar to FIG. 12, the inner diameter Rb of the second heater 15 in is provided at a position 0.8 times the radius Rw of the wafer 100 (Rb in = 0.8Rw). In this case, similar to the first embodiment, the temperature measurement position M2 can be set such that R1 < R2 < 0.8Rw. Similar to the example of the first embodiment, at the temperature measurement position M2, the wafer 100 (susceptor 13) is heated by the thermal radiation light H1b from the first heater 14 and the thermal radiation light H2b from the second heater 15. Therefore, the temperature of the second heater 15 for heating the temperature measurement position M2 is lower in the example than in the comparative example. That is, the apparent power supplied to the second heater 15 is lower in the example than in the comparative example. When the apparent power supplied to the second heater 15 is reduced, the influence of the thermal radiation light H2a from the second heater 15 on the temperature measurement position M1 becomes smaller. Therefore, the temperature of the first heater 14 for heating the temperature measurement position M1 is higher in the example than in the comparative example. That is, the apparent power supplied to the first heater 14 is larger in the example than in the comparative example. Therefore, when the radius R2 of the temperature measurement position M2 is made smaller than the inner diameter Rb of the second heater 15 in , the apparent power supplied to the first heater 14 tends to increase and the apparent power supplied to the second heater 15 tends to decrease.

[0080] 2.2 Effects according to this embodiment With the configuration according to this embodiment, the temperature measurement position M2 of the second radiation thermometer 51 can be set such that R1 < R2 < Rb in . That is, the distance R2 from the central axis CA to the temperature measurement position M2 can be made longer than the distance (radius) Ra from the central axis CA to the outer periphery of the first heater 14 and shorter than the distance (inner diameter) Rb from the central axis CA to the inner periphery of the second heater 15 in . Thereby, the same effect as in the first embodiment can be obtained.

[0081] 3. Third embodiment Next, the third embodiment will be described. In the third embodiment, a case where the setting range of the temperature measurement position M2 is determined based on the influence of the warp of the wafer 100 will be described. Hereinafter, the description will focus on the points different from the first and second embodiments.

[0082] 3.1 Relationship between the temperature measurement positions of the first and second radiation thermometers and the warpage of the wafer 100 First, with reference to Figures 14 and 15, the relationship between the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the warpage of the wafer 100 will be explained. Figure 14 is a cross-sectional view of the susceptor 13 and wafer 100 showing the relationship between the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the warpage of the wafer 100 in a comparative example. Figure 15 is a cross-sectional view of the susceptor 13 and wafer 100 showing the relationship between the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the warpage of the wafer 100 in an embodiment of this present invention. In the following explanation, we will focus on the temperature measurement position M2 of the second radiation thermometer 51.

[0083] As shown in Figures 14(a) and 15(a), when the residual stress in wafer 100 is compressive stress, wafer 100 takes on a convex shape downwards.

[0084] As shown in Figures 14(b) and 15(b), when the residual stress in wafer 100 is tensile stress, wafer 100 takes on an upward convex shape. The residual stress in wafer 100, i.e., the direction and amount of warping of wafer 100, differs for each wafer 100.

[0085] As shown in Figures 14(a) and (b), in the comparative example, regardless of the residual stress (direction and amount of warping) of the wafer 100, the difference between the distance between the wafer 100 and the susceptor 13 at the temperature measurement position M1 and the distance between the wafer 100 and the susceptor 13 at the temperature measurement position M2c is relatively large. Therefore, there is a difference in responsiveness between the temperature control of the first heater 14 based on the temperature measurement result at temperature measurement position M1 and the temperature control of the second heater 15 based on the temperature measurement result at temperature measurement position M2c. In addition, at temperature measurement position M2c, the distance between the wafer 100 and the susceptor 13 varies relatively large depending on the direction of warping of the wafer 100. Therefore, the variation in temperature control (heater output) for each wafer 100 is relatively large. In other words, the reproducibility of temperature control between wafers is relatively low.

[0086] As shown in (a) and (b) of FIG. 15, in the embodiment, similar to the first embodiment, the radius R1 of the temperature measurement position M1, the radius R2 of the temperature measurement position M2, and the radius Rw of the wafer 100 satisfy the relationship of 0 ≦ R1 < R2 < 0.8Rw. Thereby, regardless of the residual stress (the direction and amount of warpage) of the wafer 100, the difference between the distance between the wafer 100 and the susceptor 13 at the temperature measurement position M1 and the distance between the wafer 100 and the susceptor 13 at the temperature measurement position M2 can be made smaller than in the comparative example. Also, at the temperature measurement position M2, the variation in the distance between the wafer 100 and the susceptor 13 due to the direction of warpage of the wafer 100 can be made smaller than in the comparative example. For this reason, the variation in temperature control (heater output) for each wafer 100 can be made smaller than in the comparative example. Therefore, the variation in the temperature adjustment control of the first heater 14 and the second heater 15 due to the residual stress of the wafer 100 can be suppressed. That is, the reproducibility of temperature control between wafers can be made higher than in the comparative example.

[0087] 3.2 Effects according to this embodiment With the configuration according to this embodiment, similar to the first embodiment, the temperature measurement position M2 of the second radiation thermometer 51 can be set to R1 < R2 < 0.8Rw. Thereby, the variation in heater output between wafers due to the residual stress of the wafer 100 can be suppressed. Thus, a decrease in the reproducibility of temperature control between wafers in the semiconductor manufacturing apparatus 1 can be suppressed. Further, by setting the temperature measurement position M2 of the second radiation thermometer 51 to R1 < R2 < 0.8Rw, the variation in the distance between the wafer 100 and the susceptor 13 at the temperature measurement positions M1 and M2 can be made smaller. Thereby, the temperature variation within the wafer surface can be reduced. Thus, the occurrence of deformation, distortion, crystal defects, etc. of the wafer 100 can be suppressed.

[0088] As the diameter of the wafer 100 increases, the amount of warpage tends to increase. For this reason, this effect is effective for large-diameter wafers 100.

[0089] 4. Others While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of symbols]

[0090] 1...Semiconductor manufacturing equipment, 10...Chamber, 11...Exhaust port, 12...Rotating body, 13...Susceptor, 14...First heater, 15...Second heater, 16...Gate valve, 20...Gas supply unit, 21...Rectifier plate, 22...First partition plate, 23...Second partition plate, 24...Third partition plate, 25...First gas region, 26...Second gas region, 27...Third gas region, 28...Fourth gas region, 31-33...Gas supply nozzle, 34...Temperature measuring nozzle, 35...Nozzle cap, 41...Temperature measuring window, 50...First radiation thermometer, 50...Second radiation thermometer, 60...Control unit, 61...First heater control unit, 62...Second heater control unit, 100...Wafer

Claims

1. Chamber and, A susceptor is provided inside the chamber and capable of supporting a wafer on its upper surface, A rotating body provided within the chamber, which rotates the susceptor about a predetermined central axis, A first radiation thermometer is provided above the chamber and measures the temperature of the first temperature measurement position of the wafer mounted on the susceptor, A second radiation thermometer is provided above the chamber, adjacent to the first radiation thermometer, for measuring the temperature at the second temperature measurement position of the wafer mounted on the susceptor, A first heater is provided below the susceptor to heat the central region of the wafer, and a second heater is provided to heat the outer region of the wafer. Based on temperature measurement data from the first radiation thermometer and the second radiation thermometer, a control unit controls the power applied to the first heater and the second heater, respectively, in order to adjust the first and second temperature measurement positions of the wafer to predetermined temperatures. Equipped with, The second distance from the central axis to the second temperature measurement position is longer than the first distance from the central axis to the first temperature measurement position and shorter than 0.8 times the radius of the wafer. Semiconductor manufacturing equipment.

2. If the first distance is shorter than 0.5 times the radius of the wafer, the second distance is longer than 0.5 times the radius of the wafer and shorter than 0.8 times the radius of the wafer. The semiconductor manufacturing apparatus according to claim 1.

3. The first heater is located below the susceptor and is controlled based on the temperature measurement result from the first radiation thermometer or a preset heater output. The second heater is provided below the susceptor so as to surround the first heater, has an annular shape, and is configured based on the temperature measurement result from the second radiation thermometer or a preset heater output. The semiconductor manufacturing apparatus according to claim 1.

4. The center of the wafer is located on the central axis, The semiconductor manufacturing apparatus according to claim 1.

5. The chamber further comprises a gas supply unit located at the top of the chamber, The aforementioned gas supply unit, A temperature-measuring window is provided on the top surface, A rectifier plate used for straightening gas flow, Multiple nozzles passing through a rectifier plate, The first radiation thermometer and the second radiation thermometer each receive thermal radiation light emitted from the surface of the wafer through the temperature-measuring window and one of the plurality of nozzles. The semiconductor manufacturing apparatus according to claim 1.

6. The first heater is located below the susceptor and has a disc shape. The second heater is provided below the susceptor so as to surround the first heater, and has an annular shape with an inner diameter 0.8 times the radius of the wafer. The first distance from the central axis to the first temperature measurement position is shorter than the radius of the first heater. The second distance from the central axis to the second temperature measurement position is longer than the first distance and shorter than the inner diameter of the second heater. The semiconductor manufacturing apparatus according to claim 1.

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