Glass core and related methods, including penetrating and protruding through glass vias.

Abstract

Glass cores, including those that protrude through glass vias, and related methods are disclosed herein. [Solution] An exemplary substrate disclosed herein includes a glass core including a surface and through-copper glass vias (TGVs) extending through the glass core, the TGVs including projections extending from the surface.

Claims

1. A substrate for an integrated circuit package, wherein the substrate is A glass core including the surface, The system includes a copper-through glass via (TGV) extending through the glass core, The TGV extends above the surface of the glass core. substrate.

2. The substrate includes a buffer layer on the surface, The buffer layer surrounds the protruding portion of the TGV above the surface. The substrate according to claim 1.

3. The aforementioned surface is the first surface, and The buffer layer includes a second surface that is complementary to the first surface. The substrate according to claim 2.

4. The TGV and the protruding part are integrally formed. The substrate according to claim 2.

5. The aforementioned TGV is the first TGV, The substrate includes a second TGV and a third TGV, The glass core has a first region between the first TGV and the second TGV, The glass core has a second region between the second TGV and the third TGV, The first and second regions are substantially on the same plane. A substrate according to any one of claims 1 to 4.

6. The aforementioned TGV is the first TGV, The substrate includes a second TGV, The glass core has a second region between the first TGV and the TGV, The second region has a curved shape. A substrate according to any one of claims 1 to 4.

7. The curved shape is concave. The substrate according to claim 6.

8. It is a device, Semiconductor die, and, This is a package substrate that supports the aforementioned semiconductor die, A glass core including a curved surface, The system includes a copper-through glass via (TGV) extending through the glass core, The aforementioned TGV extends outside the glass core. Package substrate, A device that includes this.

9. The device described above, The curved surface includes a buffer layer, The buffer layer surrounds the protruding portion of the TGV above the curved surface. The device according to claim 8.

10. The protrusion has a length parallel to the thickness of the glass core, The length is between 5% and 20% of the thickness of the glass core. The device according to claim 9.

11. The aforementioned device further, Includes a build-up layer having interconnections electrically connected to the TGV, The buffer layer is located between the glass core and the build-up layer. The device according to claim 9.

12. The aforementioned curved surface is the first curved surface, The aforementioned protrusion is the first protrusion, The glass core further includes a second curved surface opposite to the first curved surface, The TGV includes a second projection extending from the second curved surface, The device according to any one of claims 9 to 11.

13. The curved surface is concave. The device according to claim 8.

14. The curved surface has a meniscus shape. The device according to claim 13.

15. It is a device, Semiconductor die, and, This is a package substrate that supports the aforementioned semiconductor die, A glass core including the outer surface, A build-up layer above the glass core, comprising an interconnection electrically connected to the semiconductor die, A copper through-glass via (TGV) in a through-hole of the glass core, wherein the TGV includes an end projecting above the outer surface, and the end is electrically connected to the interconnection. Device.

16. The aforementioned device further, A buffer layer is included between the build-up layer and the glass core. The buffer layer surrounds the end at least partially. The apparatus according to claim 15.

17. The glass core has a first thickness adjacent to the TGV and a second thickness distal to the TGV. The first thickness is greater than the second thickness. The apparatus according to claim 15.

18. The aforementioned outer surface is substantially planar. The apparatus according to claim 17.

19. The aforementioned outer surface is the first outer surface, The aforementioned end is the first end, The glass core includes a second outer surface opposite to the first outer surface, The TGV includes a second end portion that protrudes from the second outer surface, The apparatus according to any one of claims 15 to 18.

20. The TGV is in contact with the glass core adjacent to the outer surface. The apparatus according to claim 15.

21. It is a method, The steps include forming a hole in the glass core of the package substrate, The steps include plating through-glass vias (TGV) into the holes of the package substrate, The step of processing at least one of the TGV or the glass core, wherein the TGV includes a projection extending from the glass core, Methods that include...

22. The step of processing at least one of the TGV or the glass core is: Plasma dry etching of the glass core, and The glass core is wet-etched, The method according to claim 21, including the method described in claim 21.

23. The aforementioned wet etching involves applying sulfuric acid to the glass core. The method according to claim 22, including the method described in claim 22.

24. The step of processing at least one of the TGV or the glass core includes a two-stage polishing process, the two-stage polishing process is Polishing the glass core using a copper slurry, and Polishing the glass core using a silicon oxide slurry, The method according to claim 21, including the method described in claim 21.

25. The above method further, The step includes depositing a buffer layer on the glass core, The aforementioned protrusion extends into the buffer layer. The method according to any one of claims 21 to 24.

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