Thin film deposition methods

Abstract

The present invention provides an intake device, a thin film deposition apparatus, and a thin film deposition method that eliminate points where the vector sum of the wafer's velocity and the reaction gas intake velocity is zero, thereby uniformly distributing the reaction gas retention layer on the wafer. [Solution] The intake assembly 110 is connected to the air supply device 200, and the intake device 100 includes the intake assembly and the speed governor assembly 120. The intake assembly is used to supply reaction gas from the air supply device to the reaction chamber, and the speed governor assembly is provided between the intake assembly and the air supply device or at the exhaust end of the intake assembly and is used to increase the velocity of the reaction gas supplied to the reaction chamber. By increasing the velocity of the reaction gas supplied to the reaction chamber, points where the vector sum of the wafer's own velocity and the intake velocity of the reaction gas is zero can be eliminated, the reaction gas retention layer on the wafer can be uniformly distributed, and the uniformity of the thickness of the film layer formed by deposition can be further improved.

Claims

1. The present invention provides a thin film deposition apparatus, the thin film deposition apparatus comprising, in sequence, an air supply device, an air intake device, and a reaction chamber, wherein a wafer is placed on a susceptor in the reaction chamber, a reaction gas is supplied to the reaction chamber by the air intake device, and the wafer is driven to rotate by the susceptor. The method involves obtaining the base intake velocity of the intake assembly of the air supply device, wherein the base intake velocity has a positive correlation with the flow rate of the reaction gas supplied from the air supply device, and the base intake velocity has a negative correlation with the flow area of ​​the intake assembly. The rotational speed of the wafer is obtained, and the outer edge velocity of the wafer is calculated based on the rotational speed of the wafer and the radius of the wafer. This includes comparing the base intake velocity with the outer edge linear velocity, and increasing the intake velocity of the reaction gas when the base intake velocity is smaller than the outer edge linear velocity. A thin film deposition method characterized by the following:

2. The intake velocity of the reaction gas is greater than or equal to the outer edge linear velocity. The thin film deposition method according to feature 1.

3. The intake device includes a paddle, which is provided between the intake assembly and the supply device, and a method for increasing the intake velocity of the reaction gas is: This includes controlling the ON state of the paddle, or The intake device includes a pressure control valve, which is provided between the intake assembly and the supply device, and a method for increasing the intake velocity of the reaction gas is, This includes reducing the flow area of ​​the reaction gas in the pressure control valve. The thin film deposition method according to feature 2.

4. The intake device includes the paddle and the pressure control valve, both of which are provided between the intake assembly and the supply device, and the method for increasing the intake velocity of the reaction gas is, This includes reducing the flow area of ​​the reaction gas in the pressure control valve, and controlling the ON state of the paddle when the pressure control valve malfunctions or when the flow area of ​​the reaction gas in the pressure control valve is reduced to its limit position. The thin film deposition method according to feature 3.

5. A method for increasing the intake velocity of the reaction gas is, A rectifier cover is attached to the intake or exhaust end of the intake assembly, the rectifier cover includes an intake port and an exhaust port, and the flow area of ​​the intake port of the rectifier cover is larger than the flow area of ​​the exhaust port of the rectifier cover. The thin film deposition method according to feature 1.

6. A method for increasing the intake velocity of the reaction gas is, This includes reducing the pressure at the exhaust port of the reaction chamber. The thin film deposition method according to feature 1.

7. A method for increasing the intake velocity of the reaction gas is, This includes increasing the temperature of the reaction gas in the intake device. The thin film deposition method according to feature 1.

8. The base intake velocity of the intake assembly is calculated based on the airflow rate of the air supply device. The thin film deposition method according to feature 1.

Images