Circuit board cleaning apparatus and circuit board cleaning method

Abstract

To provide a substrate cleaning apparatus that can achieve a high cleaning effect. [Solution] The substrate cleaning apparatus 18 starts supplying a first rinse liquid from a rinse liquid nozzle 75 to the surface W1 of the substrate W. After forming a liquid film for particle removal on the surface W1 of the substrate W with the first rinse liquid, it starts discharging a jet of cleaning liquid from a jet nozzle 72 onto the surface W1 of the substrate W and starts moving the cleaning arm 73. Furthermore, after the cleaning arm 73 starts moving, it starts supplying a second rinse liquid from the rinse liquid nozzle 75 to the surface W1 of the substrate W, and forms a liquid film for particle removal on the surface W1 of the substrate W with the second rinse liquid.

Description

Technical Field

[0001] The present invention relates to a substrate cleaning apparatus for cleaning the surface of a substrate.

Background Art

[0002] In the manufacture of semiconductor elements, in a CMP apparatus for planarizing the surface of a substrate, a polishing process for polishing the surface of the substrate using a polishing liquid (slurry) containing abrasive grains and a polishing aid, a cleaning process for removing the slurry attached to the front and back surfaces of the substrate using a cleaning liquid, and a drying process for removing the droplets attached to the front and back surfaces of the substrate by the cleaning process are performed. If the cleaning process is not appropriate, defects occur in the structure of the element, and as a result, defective characteristics of the element occur. Therefore, it is necessary to select a cleaning method that can surely remove the slurry in a short time without causing destruction or corrosion of the element.

[0003] Therefore, in a conventional substrate cleaning apparatus, scrub cleaning using a roll-shaped or pencil-shaped sponge member is applied, and various cleaning liquids are supplied in the process of the scrub cleaning. Further, in a conventional substrate cleaning apparatus, as a form used in combination with the above-described scrub cleaning, two-fluid jet cleaning for cleaning by injecting a two-fluid jet flow composed of a mixed fluid of gas and liquid toward the substrate surface is also used (see, for example, Patent Document 1).

[0004] In two-fluid jet cleaning, while moving a two-fluid nozzle parallel to the surface of the substrate, a two-fluid jet flow is supplied from the two-fluid nozzle to the surface of the substrate, and particles such as abrasive grains and polishing debris existing on the substrate surface are peeled off by the high-speed liquid flow generated by the collision between the two-fluid jet flow and the substrate. In two-fluid jet cleaning, by increasing the flow rate (flow velocity) of the gas, fine droplets are generated from the liquid, and the injection speed of the droplets is increased. Thereby, it is possible to make the liquid flow generated in the substrate stronger.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

[0006] In conventional substrate cleaning equipment, when particle size is 100 nm or less, it becomes difficult to detach the particles from the outermost surface of the substrate by physical action alone due to the liquid flow. Therefore, as a countermeasure, it is conceivable to assist in particle detachment through chemical action by using a cleaning solution to which alkaline components or surfactant components have been added.

[0007] However, immediately after polishing or scrubbing, the surface of the substrate is covered with a liquid film of residual slurry and rinse water. The thicker this liquid film, the longer it takes for the liquid present near the particle surface to be replaced by the aforementioned alkaline or surfactant components. In other words, because it is diffusion-limited, the chemical effect on the particles is weak, and a sufficient cleaning effect cannot be obtained.

[0008] On the other hand, if the aforementioned liquid film is removed first in order to promote chemical action on the particles, the particles will become completely fixed to the outermost surface of the substrate W, making removal extremely difficult. Also, because there is not enough liquid film, the removed particles will not easily diffuse out of the system due to the flow of the liquid film. As a result, they will reattach to the outermost surface of the substrate W, and a sufficient cleaning effect cannot be obtained.

[0009] This invention has been made in view of the above problems, and aims to provide a substrate cleaning apparatus that can achieve a high cleaning effect. [Means for solving the problem]

[0010] The substrate cleaning apparatus of the present invention comprises: a substrate holding and rotating mechanism for holding a substrate and rotating it at a predetermined rotational speed; a cleaning arm positioned above the substrate; a cleaning arm moving mechanism for moving the cleaning arm in a predetermined direction above the substrate; a jet nozzle provided on the cleaning arm for discharging a jet of cleaning liquid onto the surface of the substrate; a rinsing liquid nozzle positioned above the substrate for discharging a first rinsing liquid supplied from a first rinsing liquid supply source or a second rinsing liquid supplied from a second rinsing liquid supply source onto the surface of the substrate; and a control unit for performing substrate cleaning control, which starts supplying the first rinsing liquid from the rinsing liquid nozzle to the surface of the substrate, forms a liquid film for particle removal on the surface of the substrate with the first rinsing liquid, then starts discharging a jet of cleaning liquid from the jet nozzle to the surface of the substrate and starts moving the cleaning arm, and after the movement of the cleaning arm has started, starts supplying the second rinsing liquid from the rinsing liquid nozzle to the surface of the substrate and forms a liquid film for particle removal on the surface of the substrate with the second rinsing liquid.

[0011] In this configuration, first, a first rinse liquid is supplied to the substrate surface from a rinse liquid nozzle. After a liquid film for particle removal is formed on the substrate surface by the first rinse liquid, a jet of cleaning liquid is discharged from a jet nozzle onto the substrate surface, and the cleaning arm begins to move. As a result, the cleaning process with the cleaning liquid is performed while the particles are not yet adhered to the substrate surface, resulting in a high cleaning effect. Furthermore, after the cleaning arm begins to move, a second rinse liquid is supplied to the substrate surface from a rinse liquid nozzle, and a liquid film for particle discharge is formed on the substrate surface by the second rinse liquid. As a result, the detached particles are diffused by the liquid flow and discharged outside the system, preventing them from re-adhering to the substrate surface, and a high cleaning effect is achieved.

[0012] Furthermore, in the substrate cleaning apparatus of the present invention, the first rinsing liquid may be a liquid with a lower surface tension than pure water.

[0013] This configuration makes it easier to control the thickness of the particle-removing liquid film formed on the substrate surface by the first rinsing solution. If there is no liquid film on the substrate surface, particles will adhere to the substrate surface, making removal difficult. On the other hand, if the liquid film on the substrate surface is too thick, the cleaning solution will have difficulty reaching the substrate surface, reducing the cleaning effect. According to the present invention, a thin liquid film for particle removal can be formed on the substrate surface, resulting in a high cleaning effect.

[0014] Furthermore, in the substrate cleaning apparatus of the present invention, the first rinsing solution may be a liquid containing an organic solvent component.

[0015] This configuration allows for the removal of organic matter from the substrate surface by the first rinsing solution containing an organic solvent component.

[0016] Furthermore, in the substrate cleaning apparatus of the present invention, the cleaning solution may be a liquid containing at least one component from among an alkaline component and a surfactant component.

[0017] With this configuration, particles on the substrate surface can be removed not only by physical action due to liquid flow, but also by chemical action (for example, by making the zeta potential negative), resulting in a high cleaning effect.

[0018] Furthermore, in the substrate cleaning apparatus of the present invention, the second rinsing liquid may be the same liquid as the cleaning liquid or the first rinsing liquid.

[0019] With this configuration, by using the same liquid as the cleaning solution as the second rinse solution, the effect of suppressing particle re-adhesion through chemical action (for example, by making the zeta potential negative) can be obtained. Furthermore, by using the same liquid as the first rinse solution as the second rinse solution, if the first rinse solution is an organic solvent, the effect of removing organic matter from the substrate surface can be obtained.

[0020] Furthermore, in the substrate cleaning apparatus of the present invention, the jet nozzle may be a two-fluid nozzle that sprays a two-fluid jet of the cleaning liquid and gas onto the surface of the substrate.

[0021] In this configuration, a first rinse solution is supplied to the substrate surface from a rinse solution nozzle. After a liquid film for particle removal is formed on the substrate surface by the first rinse solution, a two-fluid jet is sprayed onto the substrate surface from a two-fluid nozzle, and the cleaning arm begins to move. As a result, two-fluid cleaning is performed while the particles are not adhered to the substrate surface, and a high cleaning effect is obtained. For example, a sufficient cleaning effect can be obtained even if the particle size is 100 nm or less.

[0022] The present invention relates to a substrate cleaning method performed by a substrate cleaning apparatus, the substrate cleaning apparatus comprising: a substrate holding and rotating mechanism for holding a substrate and rotating it at a predetermined rotational speed; a cleaning arm positioned above the substrate; a cleaning arm moving mechanism for moving the cleaning arm in a predetermined direction above the substrate; a jet nozzle provided on the cleaning arm for discharging a jet of cleaning liquid onto the surface of the substrate; and a device positioned above the substrate for discharging a first rinse liquid supplied from a first rinse liquid supply source or a second rinse liquid supplied from a second rinse liquid supply source onto the surface of the substrate. The substrate cleaning method comprises a nozzle for discharging a rinse liquid, and the method starts by supplying the first rinse liquid from the rinse liquid nozzle to the surface of the substrate, forming a liquid film for particle removal on the surface of the substrate with the first rinse liquid, then starting to discharge a jet of the cleaning liquid from the jet nozzle to the surface of the substrate and starting to move the cleaning arm, and after the movement of the cleaning arm has started, starting to supply the second rinse liquid from the rinse liquid nozzle to the surface of the substrate, forming a liquid film for particle removal on the surface of the substrate with the second rinse liquid.

[0023] Also by this method, as with the above-described apparatus, first, a first rinse liquid is supplied from a rinse liquid nozzle to the surface of the substrate, and after a liquid film for particle peeling is formed on the surface of the substrate by the first rinse liquid, the discharge of the jet flow of the cleaning liquid from the jet nozzle to the surface of the substrate is started and the movement of the cleaning arm is started. Thereby, the cleaning process with the cleaning liquid is performed in a state where the particles are not fixed to the surface of the substrate, and a high cleaning effect is obtained. Further, after the movement of the cleaning arm is started, a second rinse liquid is supplied from a rinse liquid nozzle to the surface of the substrate, and a liquid film for particle discharge is formed on the surface of the substrate by the second rinse liquid. Thereby, the peeled particles are diffused by the liquid flow and discharged out of the system, and reattachment to the surface of the substrate is suppressed, and a high cleaning effect is obtained.

Effect of the Invention

[0024] According to the present invention, when cleaning the surface of a substrate with a substrate cleaning apparatus, a high cleaning effect can be obtained.

Brief Description of the Drawings

[0025] [Figure 1] It is a diagram showing an example of a substrate processing apparatus. [Figure 2] It is a diagram showing an example of a substrate cleaning apparatus (second cleaning module) in an embodiment of the present invention. [Figure 3] It is a cross-sectional view showing an example of a two-fluid nozzle. [Figure 4] It is an explanatory diagram showing the configuration of a substrate cleaning apparatus in an embodiment of the present invention. [Figure 5] It is a flowchart for explaining the operation of a substrate cleaning apparatus in an embodiment of the present invention. [Figure 6] It is an explanatory diagram for explaining the operation of a substrate cleaning apparatus in an embodiment of the present invention. [Figure 7] It is an explanatory diagram for explaining the operation of a substrate cleaning apparatus in an embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0026] Hereinafter, an embodiment of the substrate cleaning apparatus of the present invention will be described with reference to the drawings. In this embodiment, an example is given of a substrate cleaning apparatus used as a cleaning device equipped with a two-fluid jet cleaning nozzle that sprays fine droplets together with a carrier gas at high speed.

[0027] The configuration of the substrate cleaning apparatus according to an embodiment of the present invention will be described with reference to the drawings. Figure 1 is a diagram showing the overall configuration of a substrate processing apparatus to which the substrate cleaning apparatus of this embodiment is applied. As shown in Figure 1, the substrate processing apparatus 1 comprises a housing 10 and a load port 12 on which a substrate cassette for stocking a large number of substrates such as semiconductor wafers is placed. The load port 12 is located adjacent to the housing 10.

[0028] The substrate processing apparatus 1 comprises a polishing unit 2 and a cleaning unit 4 located inside the housing 10. The polishing unit 2 comprises a plurality (four in this embodiment) of polishing modules 14a to 14d. The cleaning unit 4 comprises a first cleaning module 16 and a second cleaning module 18 for cleaning the polished substrate, and a drying module 20 for drying the cleaned substrate. The polishing modules 14a to 14d are arranged along the longitudinal direction of the substrate processing apparatus 1. Similarly, the first cleaning module 16, the second cleaning module 18, and the drying module 20 are arranged along the longitudinal direction of the substrate processing apparatus 1.

[0029] The substrate processing apparatus 1 comprises a first transport robot 22 positioned adjacent to the load port 12 and a transport module 24 positioned adjacent to the polishing modules 14a to 14d. The first transport robot 22 receives substrates before polishing from the load port 12 and transfers them to the transport module 24, and also receives dried substrates from the drying module 20 and returns them to the load port 12. The transport module 24 transports the substrates received from the first transport robot 22 and transfers substrates between each of the polishing modules 14a to 14d.

[0030] The substrate processing apparatus 1 includes a second transfer robot 26 positioned between the first cleaning module 16 and the second cleaning module 18, and a third transfer robot 28 positioned between the second cleaning module 18 and the drying module 20. The second transfer robot 26 transfers substrates between the transfer module 24 and each cleaning module 16, 18. The third transfer robot 28 transfers substrates between each module 18, 20.

[0031] Figure 2 shows a substrate cleaning apparatus (second cleaning module 18) according to this embodiment. The second cleaning module 18 includes a substrate holding and rotating mechanism 70 that rotates the substrate W while holding it horizontally, a cleaning member 71 that contacts the substrate W and scrubs the substrate W, a two-fluid nozzle 72 that sprays a two-fluid jet toward the substrate W, a cleaning arm 73 connected to the cleaning member 71 and the two-fluid nozzle 72, a rocking mechanism 79 that rocks the cleaning arm 73 in the horizontal direction, rinsing liquid nozzles 75 and 76 that supply rinsing liquid to adjust the liquid film thickness toward the upper surface W1 and lower surface W2 of the substrate W, and pure water nozzles 77 and 78 that supply pure water toward the upper surface W1 and lower surface W2 of the substrate W.

[0032] The substrate holding and rotating mechanism 70 comprises chucks 70a to 70d that hold the peripheral edge of the substrate W, and a motor 70e connected to the chucks 70a to 70d. The chucks 70a to 70d hold the substrate W, and the motor 70e drives it, causing the substrate W to rotate around its axis.

[0033] The cleaning member 71 is a pencil-shaped sponge member that rotates around its central axis while contacting and scrubbing the upper surface W1 of the substrate W. The sponge member is preferably made of a highly hydrophilic material, such as PVAc (polyvinyl acetal) or polyurethane. The direction of the central axis of the cleaning member 71 is perpendicular to the substrate W.

[0034] The cleaning arm 73 is positioned above the substrate W and is connected to the rocking mechanism 79. The rocking mechanism 79 comprises a pivot shaft 79a, a rotation mechanism 79b, and a lifting mechanism 79c. One end of the cleaning arm 73 is connected to the pivot shaft 79a, and a cleaning member 71 and a two-fluid nozzle 72 are attached to the other end of the cleaning arm 73.

[0035] The pivot axis 79a is connected to a rotation mechanism 79b that rotates the cleaning arm 73 and a lifting mechanism 79c that moves the pivot axis 79a up and down. The rotation mechanism 79b is configured to rotate the pivot axis 79a by a predetermined angle, thereby rotating the cleaning arm 73 in a plane parallel to the substrate W. The lifting mechanism 79c functions to adjust the distance between the two-fluid nozzle 72 and the upper surface W1 of the substrate W. An example of the lifting mechanism 79c is a motor-driven mechanism using a ball screw or an air cylinder.

[0036] Figure 3 is a longitudinal cross-sectional view showing an example of a two-fluid nozzle 72. A gas inlet 72a is formed at the upper end of the two-fluid nozzle 72, and directly below it is a liquid chamber 72b for temporarily storing cleaning liquid and a cleaning liquid inlet 72c communicating with the liquid chamber 72b. An injection port 72d is formed at the lower end of the two-fluid nozzle 72, and a flow path 72e is formed between the liquid chamber 72b and the injection port 72d. Cleaning liquid and gas are supplied to the two-fluid nozzle 72 simultaneously. The cleaning liquid fills the liquid chamber 72b, and the gas and cleaning liquid are mixed in the flow path 72e to form a two-fluid jet, which is then ejected from the injection port 72d. The cleaning liquid inlet 72c is connected to a cleaning liquid supply source 72f. The cleaning liquid supply source 72f supplies cleaning liquid to remove particles adhering to the upper surface W1 of the substrate by two-fluid jet cleaning.

[0037] The cleaning solution should preferably have the effect of making both the particle and the substrate's zeta potential (the potential of the "slip surface" in the surrounding electric double layer where liquid flow begins) negative. Specifically, this includes alkaline cleaning solutions or those containing anionic surfactant components. In particular, the former also has a slight etching effect on silica (silicon dioxide), which is the main component of abrasive grains, thus providing a high cleaning effect on residual slurry. The cleaning solution may also contain a water-soluble organic solvent as a component. The cleaning solution is adjusted to a temperature of room temperature or higher, and lower than the boiling point of pure water.

[0038] Figure 4 is an explanatory diagram showing the configuration of the substrate cleaning apparatus (second cleaning module 18) of this embodiment. As shown in Figure 4, the rinse liquid nozzle 75 is connected to the first rinse liquid supply source 51 and the second rinse liquid supply source 52, and the rinse liquid nozzle 76 is connected to the third rinse liquid supply source 53. The rinse liquid nozzle 75 supplies the first or second rinse liquid to the upper surface W1 of the substrate, and the rinse liquid nozzle 76 supplies the third rinse liquid to the lower surface W2 of the substrate.

[0039] An automatic switching valve 75a is provided between the rinse liquid nozzle 75 and the first rinse liquid supply source 51 and the second rinse liquid supply source 52, and an automatic switching valve 76a is provided between the rinse liquid nozzle 76 and the third rinse liquid supply source 53. The supply timing of the first rinse liquid and the supply timing of the second rinse liquid can be switched by the automatic operation recipe. The supply timing of the third rinse liquid is the same as the supply timing of the second rinse liquid.

[0040] The first rinse solution supply source 51 supplies a first rinse solution to the rinse solution nozzle 75 to form a liquid film on the upper surface W1 of the substrate that is thinner than the liquid film formed by the discharge of pure water at room temperature. The first rinse solution is preferably a liquid with a lower surface tension than pure water at room temperature and is water-soluble. Specifically, it may contain alcohols such as isopropyl alcohol (IPA) or organic solvents such as dimethyl sulfoxide (DMSO) as components. In particular, the latter has the effect of dissolving organic substances that are difficult to remove with water-based cleaning solutions, so a higher cleaning effect can be obtained by using it in combination with the cleaning solution for two-fluid jet cleaning. Furthermore, it is preferable that the first rinse solution is adjusted to a temperature higher than room temperature and lower than the boiling point of pure water.

[0041] In this embodiment, as the first rinsing liquid, for example, a liquid with a lower surface tension than pure water at room temperature can be used. The surface tension values ​​shown below are for use at room temperature. Isopropyl alcohol (IPA) Surface tension: 0.021 N / m Dimethyl sulfoxide (DMSO) Surface tension: 0.044 N / m Ethanol surface tension: 0.022 N / m Methyl ethyl ketone (MEK) Surface tension: 0.025 N / m Hydrofluoroether (HFE) Surface tension: 0.014 N / m

[0042] The second rinse liquid supply source 52 supplies a second rinse liquid to the rinse liquid nozzle 75 to discharge particles detached from the upper surface W1 of the substrate by the cleaning liquid sprayed from the two-fluid nozzle. The second rinse liquid restores the liquid film on the upper surface W1 of the substrate, which has been temporarily thinned by the first rinse liquid supply process and the two-fluid jet cleaning process in the preceding steps, thereby suppressing the detached particles from reattaching to the upper surface W1 of the substrate.

[0043] As the second rinsing solution, a cleaning solution with the same components as the two-fluid jet cleaning treatment may be used. When the second rinsing solution contains the same components as the cleaning solution, the effect of suppressing particle re-adhesion is further improved by the action of making the zeta potential negative. Alternatively, the second rinsing solution may contain the organic solvent components of the first rinsing solution as described above. When the second rinsing solution contains the organic solvent components of the first rinsing solution, the effect of removing organic matter is further improved. It is desirable that the temperature of the second rinsing solution be adjusted to be higher than room temperature and lower than the boiling point of pure water.

[0044] The third rinse liquid supply source 53 supplies a third rinse liquid to the rinse liquid nozzle 76 to discharge particles that have spread to the lower surface W2 of the substrate out of the system. The third rinse liquid can be the same as the second rinse liquid. It is desirable that the third rinse liquid is also adjusted to a temperature higher than room temperature and lower than the boiling point of pure water. In this embodiment, the second and third rinse liquids can contain at least one of the following: ammonia, quaternary ammonium compounds, amino alcohols, amine compounds, etc.

[0045] The control unit 74 performs various controls for cleaning the surface of the substrate W. Specifically, the control unit 74 starts supplying a first rinse liquid from a rinse liquid nozzle to the surface of the substrate W, forms a liquid film for particle removal on the substrate surface with the first rinse liquid, then starts discharging a jet of cleaning liquid from a jet nozzle onto the substrate surface and starts moving the cleaning arm, and after the cleaning arm starts moving, starts supplying a second rinse liquid from a rinse liquid nozzle to the substrate surface and forms a liquid film for particle removal on the substrate surface with the second rinse liquid, thereby performing substrate cleaning control. The substrate cleaning control will be described later with reference to the drawings.

[0046] The operation (substrate cleaning control) of the substrate cleaning apparatus configured as described above will be explained with reference to Figures 5 to 7.

[0047] As shown in Figure 5, when cleaning the surface of a substrate using the substrate cleaning apparatus of this embodiment, first, the substrate W, which has been cleaned in the first cleaning module 16, is transported to the second cleaning module 18 (see Figure 1). The substrate holding and rotating mechanism 70 holds the substrate W that has been transported to the second cleaning module 18, and in this state, starts rotating the substrate W (see step S101).

[0048] Next, the automatic switching valve 75a is changed to the first rinse fluid supply setting, and the supply of the first rinse fluid from the rinse fluid nozzle 75 to the upper surface W1 of the substrate begins (see step S102). Subsequently, the two-fluid nozzle 72 moves from the standby position to the processing start position located above the center of the upper surface W1 of the substrate by the rotation of the cleaning arm 73 (see step S103). Subsequently, the automatic switching valve 75a is changed to the supply stop setting, and the supply of the first rinse fluid is stopped (see step S104).

[0049] Next, the two-fluid nozzle 72 starts spraying a mixed jet of gas and cleaning liquid (see step S105). Subsequently, the two-fluid nozzle 72 starts moving radially from the processing start position located above the center of the upper surface W1 of the substrate to the processing end position located above the edge of the upper surface W1 of the substrate, due to the rotation of the cleaning arm 73 (see step S106). Subsequently, the automatic switching valves 75a and 76a are changed to the second rinse liquid supply setting, and the supply of the second rinse liquid and the third rinse liquid from the rinse liquid nozzles 75 and 76 to the upper surface W1 and lower surface W2 of the substrate begins (see step S107).

[0050] At this time, the second rinsing solution is supplied to the area on the upper surface W1 of the substrate where the liquid film has temporarily thinned immediately after passing through the two-fluid nozzle 72. In other words, the particles detached from the upper surface W1 of the substrate by the two-fluid jet cleaning process are immediately diffused by the liquid flow formed by the second rinsing solution and efficiently discharged from the system. Note that the series of processes from step S104 to step S107 may be performed sequentially or simultaneously.

[0051] When the two-fluid nozzle 72 reaches the processing completion position described above, the operation of the cleaning arm 73 is temporarily suspended (see step S108). Subsequently, the two-fluid nozzle 72 stops spraying the mixed jet of gas and cleaning liquid (see step S109). Subsequently, the automatic switching valves 75a and 76a are changed to the supply stop setting, and the supply of the second and third rinse liquids is terminated (see step S110).

[0052] Next, the pure water nozzles 77 and 78 begin supplying pure water to the upper surface W1 and lower surface W2 of the substrate (see step S111). Subsequently, the two-fluid nozzle 72 moves from the processing completion position to the standby position (see step S112). The series of processes from step S109 to step S112 may be performed sequentially or simultaneously. Furthermore, since particles tend to remain near the edges of the substrate, modifications may be made to address this, such as intentionally lengthening the time from step S108 to step S109, or repeating all or part of steps S102 to S110.

[0053] Once the process in step S111 has elapsed for a certain period of time, the substrate holding and rotating mechanism 70 stops rotating the substrate W (see step S113). Subsequently, the pure water nozzles 77 and 78 stop supplying pure water to the upper surface W1 and lower surface W2 of the substrate (see step S114). As soon as the substrate W, which has completed the cleaning process in the above series of steps, is released from being held by the substrate holding and rotating mechanism 70, it is transported to the drying module 20 by the third transport robot 28 (see Figure 1).

[0054] With this type of substrate cleaning apparatus (second cleaning module 18), the first rinsing liquid is discharged onto the surface W1 of the substrate W at a stage prior to the cleaning process by the two-fluid nozzle 72. As a result, a liquid film thinner than the liquid film formed by the discharge of pure water at room temperature is formed on the surface W1 of the substrate W. Therefore, the cleaning process by the two-fluid nozzle 72 is performed while particles are not adhering to the surface W1 of the substrate W.

[0055] Furthermore, with this substrate cleaning apparatus (second cleaning module 18), during the cleaning process using the two-fluid nozzle 72, the liquid present near the particle surface is quickly replaced by a cleaning solution containing alkaline or surfactant components sprayed from the two-fluid nozzle 72. Therefore, not only the physical action of the liquid flow but also the chemical action of the aforementioned cleaning solution components contributes to the removal of particles from the substrate.

[0056] Furthermore, in this substrate cleaning apparatus (second cleaning module 18), during the cleaning process using the two-fluid nozzle 72, the operation of the two-fluid nozzle 72 moving above the substrate W by the oscillating mechanism 79 while spraying the cleaning solution and the operation of the second rinse solution being discharged onto the surface W1 of the substrate W are performed simultaneously. As a result, the detached particles are diffused by the liquid flow of the second rinse solution and discharged out of the system, suppressing their re-adhesion to the surface W1 of the substrate W. In this way, two-fluid jet cleaning with sufficient cleaning performance is provided even when the particle size is 100 nm or less.

[0057] In this embodiment, first, a first rinse liquid is supplied to the surface W1 of the substrate W from a rinse liquid nozzle 75. After a liquid film for particle removal is formed on the surface W1 of the substrate W by the first rinse liquid, a two-fluid jet is sprayed onto the surface W1 of the substrate W from a two-fluid nozzle 72, and the oscillation of the cleaning arm 73 is started. As a result, the cleaning process with the cleaning liquid is performed while the particles are not fixed to the surface of the substrate W, and a high cleaning effect is obtained. For example, a sufficient cleaning effect can be obtained even if the particle size is 100 nm or less.

[0058] Furthermore, in this embodiment, after the movement of the cleaning arm 73 begins, a second rinsing liquid is supplied to the surface W1 of the substrate W from the rinsing liquid nozzle 75, and a liquid film for particle discharge is formed on the surface of the substrate by the second rinsing liquid. As a result, the detached particles are diffused by the liquid flow and discharged out of the system, preventing them from reattaching to the surface of the substrate, and a high cleaning effect is obtained.

[0059] Furthermore, in this embodiment, since a liquid with a lower surface tension than pure water is used as the first rinsing liquid, it is easy to control the thickness of the particle-removing liquid film formed on the surface W1 of the substrate W by the first rinsing liquid to be thin. If there is no liquid film on the surface of the substrate, the particles will adhere to the surface of the substrate and will be difficult to remove. On the other hand, if the liquid film on the surface of the substrate is too thick, the cleaning liquid will have difficulty reaching the surface of the substrate, and the cleaning effect will decrease. According to this embodiment, a liquid film for particle removal (a thin liquid film) can be formed on the surface W1 of the substrate W, so a high cleaning effect can be obtained. In addition, if the first rinsing liquid contains an organic solvent component, the first rinsing liquid can be used to remove organic matter from the surface of the substrate.

[0060] Furthermore, in this embodiment, since a liquid containing either an alkaline component or a surfactant component is used as the cleaning solution, particles on the substrate surface can be removed not only by the physical action of the liquid flow but also by chemical action (for example, by making the zeta potential negative), resulting in a high cleaning effect.

[0061] Furthermore, in this embodiment, if the same liquid as the cleaning solution is used as the second rinsing solution, the effect of suppressing particle re-adhesion through chemical action (for example, by making the zeta potential negative) can be obtained. Alternatively, if the same liquid as the first rinsing solution is used as the second rinsing solution, and the first rinsing solution is an organic solvent, the effect of removing organic matter from the surface of the substrate can be obtained.

[0062] Although embodiments of the present invention have been described above by example, the scope of the present invention is not limited to these, and modifications and alterations can be made within the scope described in the claims depending on the purpose.

[0063] For example, in the above embodiment, an example was described in which the cleaning arm moving mechanism is a rocking mechanism 79 that rocks the cleaning arm from the center of the substrate in the radial direction of the substrate, but the scope of the present invention is not limited thereto. The cleaning arm moving mechanism may be a parallel movement mechanism that moves the cleaning arm in the radial direction of the substrate.

[0064] Furthermore, although the above embodiment describes an example in which the jet nozzle is a two-fluid nozzle 72, the scope of the present invention is not limited thereto. The jet nozzle may also be a one-fluid nozzle that ejects a jet of only liquid. [Industrial applicability]

[0065] As described above, the substrate cleaning apparatus according to the present invention has the effect of achieving a high cleaning effect and can be applied to semiconductor device manufacturing processes, flat panel display manufacturing processes, image sensor manufacturing processes such as CMOS and CCD, and magnetic film manufacturing processes for MRAM, making it useful. [Explanation of Symbols]

[0066] 1. Substrate processing device 2 Polishing section 4. Cleaning section 10 Housing 12 Load Ports 14a~d Polishing Module 16. First cleaning module 18. Second cleaning module (circuit board cleaning device) 20 Drying Modules 22. First Transport Robot 24 transport modules 26. Second Transport Robot 28. Third Transport Robot 70. Substrate holding and rotating mechanism 72 Two-fluid nozzle 73 Washing Arm 74 Control Unit 75 Rinse solution nozzle 76 Rinse liquid nozzle 77 Pure water nozzle 78 Pure water nozzle 79. Oscillating mechanism W board W1 top surface W2 Bottom side

Claims

1. A substrate holding and rotating mechanism that holds the substrate and rotates it at a predetermined rotational speed, A cleaning arm positioned above the substrate, A cleaning arm movement mechanism moves the cleaning arm in a predetermined direction above the substrate, The cleaning arm is equipped with a jet nozzle that discharges a jet of cleaning liquid onto the surface of the substrate, A rinse liquid nozzle is positioned above the substrate and discharges either a first rinse liquid supplied from a first rinse liquid supply source or a second rinse liquid supplied from a second rinse liquid supply source onto the surface of the substrate. A control unit that performs substrate cleaning control, which starts supplying the first rinse liquid from the rinse liquid nozzle to the surface of the substrate, forms a liquid film for particle removal on the surface of the substrate with the first rinse liquid, then starts discharging a jet of cleaning liquid from the jet nozzle to the surface of the substrate and starts moving the cleaning arm, and after the cleaning arm starts moving, starts supplying the second rinse liquid from the rinse liquid nozzle to the surface of the substrate, and forms a liquid film for particle discharge on the surface of the substrate with the second rinse liquid, A circuit board cleaning device equipped with the following features.

2. The substrate cleaning apparatus according to claim 1, wherein the first rinsing liquid is a liquid with a lower surface tension than pure water.

3. The substrate cleaning apparatus according to claim 2, wherein the first rinsing solution is a liquid containing an organic solvent component.

4. The substrate cleaning apparatus according to claim 1, wherein the cleaning solution is a liquid containing at least one component selected from an alkaline component or a surfactant component.

5. The substrate cleaning apparatus according to claim 2 or claim 4, wherein the second rinsing liquid is the same liquid as the cleaning liquid or the first rinsing liquid.

6. The substrate cleaning apparatus according to claim 1, wherein the jet nozzle is a two-fluid nozzle that sprays a two-fluid jet of the cleaning liquid and gas onto the surface of the substrate.

7. A method for cleaning a circuit board, performed by a circuit board cleaning apparatus, The aforementioned substrate cleaning apparatus is A substrate holding and rotating mechanism that holds the substrate and rotates it at a predetermined rotational speed, A cleaning arm positioned above the substrate, A cleaning arm movement mechanism moves the cleaning arm in a predetermined direction above the substrate, The cleaning arm is equipped with a jet nozzle that discharges a jet of cleaning liquid onto the surface of the substrate, A rinse liquid nozzle is positioned above the substrate and discharges either a first rinse liquid supplied from a first rinse liquid supply source or a second rinse liquid supplied from a second rinse liquid supply source onto the surface of the substrate. Equipped with, The aforementioned substrate cleaning method is A substrate cleaning method comprising: starting the supply of the first rinse liquid from the rinse liquid nozzle to the surface of the substrate; forming a liquid film for particle removal on the surface of the substrate with the first rinse liquid; starting the discharge of a jet of cleaning liquid from the jet nozzle to the surface of the substrate and starting the movement of the cleaning arm; and after the movement of the cleaning arm has started, starting the supply of the second rinse liquid from the rinse liquid nozzle to the surface of the substrate and forming a liquid film for particle discharge on the surface of the substrate with the second rinse liquid.

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