Imaging device

Abstract

To provide a compact, high-performance imaging device. [Solution] The device comprises a photoelectric conversion device provided on a silicon substrate and a transistor having a channel formation region in a silicon epitaxial growth layer provided on the silicon substrate. The transistor provided in the epitaxial growth layer has good electrical characteristics, making it possible to form an imaging device with low noise. Furthermore, since the transistor can be formed to have a region that overlaps with the photoelectric conversion device, the imaging device can be miniaturized.

Claims

[Claim 1] It has a first layer and a second layer, The first layer has an area that overlaps with the second layer, The first layer comprises a semiconductor substrate and a photoelectric conversion device having a light-receiving surface on a first surface of the semiconductor substrate. The second layer comprises a semiconductor layer and a first transistor having a channel formation region in the semiconductor layer. The semiconductor layer is provided in contact with a second surface of the semiconductor substrate that is opposite to the first surface. The photoelectric conversion device is electrically connected to the first transistor, An imaging device wherein the photoelectric conversion device and the first transistor have overlapping regions.

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