Exhaust switching device and substrate processing device

Abstract

This technology provides a way to suppress the mixing of gases from multiple types of processing liquids into the exhaust gas. [Solution] The exhaust switching device according to the embodiment comprises an exterior part and an interior part. The exterior part is connected to an exhaust line that allows discharged gas to flow in and to a plurality of individual exhaust lines that discharge gas. The interior part is housed in the exterior part and switches the communication state between the exhaust line and the plurality of individual exhaust lines by rotating relative to the exterior part. The interior part comprises a plurality of inlets and partition walls. The communication state of the plurality of inlets with the exhaust line is switched according to the rotation position. The partition walls divide the interior of the interior part into a plurality of chambers corresponding to the plurality of inlets. The exterior part comprises a plurality of outlets and inlets. The plurality of outlets are provided according to the plurality of individual exhaust lines and are connected to the corresponding individual exhaust lines. The inlets are connected to the exhaust line.

Description

Technical Field

[0001] The present disclosure relates to an exhaust switching device and a substrate processing apparatus.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus that separately collects a plurality of types of processing liquids using a plurality of cups.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for suppressing the mixing of gases of a plurality of types of processing liquids into the exhausted gas.

Means for Solving the Problems

[0005] An exhaust switching device according to an aspect of the present disclosure includes an exterior portion and an interior portion. The exterior portion is connected to an exhaust line for allowing the exhausted gas to flow in and a plurality of individual exhaust lines for discharging the gas. The interior portion is housed in the exterior portion and rotates with respect to the exterior portion to switch the communication state between the exhaust line and the plurality of individual exhaust lines. The interior portion includes a plurality of inlets and partition walls. The communication state of the plurality of inlets with the exhaust line is switched according to the rotational position. The partition walls partition the interior of the interior portion into a plurality of chambers corresponding to the plurality of inlets. The exterior portion includes a plurality of outlets and an inlet. The plurality of outlets are provided corresponding to the plurality of individual exhaust lines and are respectively connected to the corresponding individual exhaust lines. The inlet is connected to the exhaust line.

Effects of the Invention

[0006] According to this disclosure, it is possible to suppress the mixing of gases from multiple types of processing liquids into the exhaust gas. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 shows the configuration of a processing unit in a substrate processing apparatus according to an embodiment of this model. [Figure 2] Figure 2 shows the configuration of the exhaust switching unit according to the embodiment. [Figure 3] Figure 3 shows the state in which the first process is executed in the processing unit according to the embodiment. [Figure 4] Figure 4 shows the state in which the second process is executed in the processing unit according to the embodiment. [Figure 5] Figure 5 is a flowchart illustrating the wafer processing according to the embodiment. [Modes for carrying out the invention]

[0008] Hereinafter, embodiments of the substrate processing apparatus and substrate processing method disclosed in this application will be described in detail with reference to the attached drawings. However, the substrate processing apparatus and substrate processing method disclosed in the embodiments described below are not limited to these embodiments.

[0009] In the following diagrams, for the sake of clarity, mutually orthogonal X, Y, and Z axis directions are sometimes defined, and a Cartesian coordinate system is shown with the positive Z axis pointing vertically upward. The X and Y axis directions are horizontal.

[0010] Furthermore, here we define the front-to-back direction with the positive X-axis as forward and the negative X-axis as backward, and the left-to-right direction with the negative Y-axis as left and the positive Y-axis as right. We also define the up-and-down direction with the positive Z-axis as upward and the negative Z-axis as downward. In addition, here we describe the outer side of the wafer in the radial direction as the "outside" and the inner side of the wafer in the radial direction as the "inside".

[0011] A substrate processing apparatus 1 according to an embodiment will be described with reference to Figure 1. Figure 1 is a diagram showing the configuration of the processing unit 2 of the substrate processing apparatus 1 according to an embodiment.

[0012] In processing unit 2, a circular wafer W (substrate) is loaded and unloaded by a transport arm (not shown). Processing unit 2 processes the wafer W using multiple processing liquids.

[0013] The processing unit 2 comprises a chamber 3, a substrate holding mechanism 4, a processing liquid supply unit 5, a guide cup 6, a processing cup 7, a recovery unit 8, a suction unit 9, an exhaust switching unit 10, and a control device 11.

[0014] Chamber 3 houses part of the substrate holding mechanism 4, part of the processing liquid supply unit 5, the guide cup 6, the processing cup 7, and the recovery unit 8. An FFU 12 (Fan Filter Unit) is provided on the ceiling of Chamber 3. The FFU creates a downflow within Chamber 3.

[0015] The substrate holding mechanism 4 holds and rotates the wafer W. The substrate holding mechanism 4 comprises a holding part 15, a support column part 16, and a drive part 17. The holding part 15 (an example of a substrate holding part) holds the wafer W (an example of a substrate) horizontally. The holding part 15 comprises a plurality of chuck pins for holding the wafer W. The wafer W is placed on the chuck pins. The holding part 15 holds the wafer W by claw parts (not shown) that hold the periphery of the wafer W. The holding part 15 includes a motor (not shown) for opening and closing the claw parts.

[0016] The support column 16 is a member that extends vertically, with its base end rotatably supported by the drive unit 17, and its tip horizontally supporting the holding portion 15. The drive unit 17 rotates the support column 16 around a vertical axis. The drive unit 17 moves a portion of the holding portion 15 vertically. The drive unit 17 includes, for example, multiple motors, gears that transmit the rotation generated by the motors, and a linkage mechanism.

[0017] The substrate holding mechanism 4 rotates the holding part 15 supported by the support column part 16 by rotating the support column part 16 using the drive part 17. Thereby, the wafer W held by the holding part 15 rotates.

[0018] The processing liquid supply part 5 supplies various liquids used for substrate processing to the wafer W. The processing liquid supply part 5 supplies the processing liquid to the wafer W (an example of a substrate) held by the holding part 15 (an example of a substrate holding part). The processing liquid supply part 5 includes a first processing liquid supply part 20, a second processing liquid supply part 21, a third processing liquid supply part 22, and a rinse liquid supply part 23.

[0019] The first processing liquid supply part 20 supplies the first processing liquid to the wafer W. The first processing liquid is an acidic processing liquid. The acidic processing liquid is, for example, DHF (hydrogen fluoride). The first processing liquid may be an SPM solution (a mixed solution of sulfuric acid and hydrogen peroxide solution). The first processing liquid supply part 20 includes a first supply nozzle 20a, a first adjustment part 20b, and a first processing liquid supply source 20c. The first supply nozzle 20a is connected to the first processing liquid supply source 20c via the first adjustment part 20b. The first adjustment part 20b can adjust the flow rate of the first processing liquid discharged from the first supply nozzle 20a. The first adjustment part 20b includes a flow rate control valve, an open / close valve, and the like.

[0020] The second processing liquid supply part 21 supplies the second processing liquid to the wafer W. The second processing liquid is an organic processing liquid. The organic processing liquid is, for example, IPA (isopropyl alcohol solution). The second processing liquid supply part 21 includes a second supply nozzle 21a, a second adjustment part 21b, and a second processing liquid supply source 21c. The second supply nozzle 21a is connected to the second processing liquid supply source 21c via the second adjustment part 21b. The second adjustment part 21b can adjust the flow rate of the second processing liquid discharged from the second supply nozzle 21a. The second adjustment part 21b includes a flow rate control valve, an open / close valve, and the like.

[0021] The third processing liquid supply unit 22 supplies the third processing liquid to the wafer W. The third processing liquid is an alkaline processing liquid. The alkaline processing liquid is, for example, SC1 liquid (ammonia peroxide). The third processing liquid supply unit 22 includes a third supply nozzle 22a, a third adjustment unit 22b, and a third processing liquid supply source 22c. The third supply nozzle 22a is connected to the third processing liquid supply source 22c via the third adjustment unit 22b. The third adjustment unit 22b can adjust the flow rate of the third processing liquid discharged from the third supply nozzle 22a. The third adjustment unit 22b includes a flow control valve, an on-off valve, and the like. Note that the substrate processing apparatus 1 may be provided with only one of the second processing liquid supply unit 21 and the third processing liquid supply unit 22.

[0022] The rinse liquid supply unit 23 supplies DIW (DeIonized Water) as the rinse liquid to the wafer W. The DIW is at room temperature. The DIW includes DIW having different temperatures. That is, the rinse liquid supply unit 23 may be able to supply DIW having different temperatures to the wafer W. The rinse liquid supply unit 23 includes a fourth supply nozzle 23a, a fourth adjustment unit 23b, and a rinse liquid supply source 23c. The fourth supply nozzle 23a is connected to the rinse liquid supply source 23c via the fourth adjustment unit 23b. The fourth adjustment unit 23b can adjust the flow rate of the DIW discharged from the fourth supply nozzle 23a. The fourth adjustment unit 23b includes a flow control valve, an on-off valve, and the like.

[0023] The guide cup 6 includes a first guide cup 6a and a second guide cup 6b. The first guide cup 6a is provided outside the wafer W. The first guide cup 6a is provided in an annular shape.

[0024] The second guide cup 6b is provided outside the first guide cup 6a. The second guide cup 6b is provided in an annular shape. The first guide cup 6a and the second guide cup 6b rotate together with the holding portion 15 of the substrate holding mechanism 4. The first guide cup 6a and the second guide cup 6b guide the processing liquid and the mist of the processing liquid scattered from the rotating wafer W to the processing cup 7. The first guide cup 6a and the second guide cup 6b have openings at the upper portions.

[0025] The processing cup 7 includes a first processing cup 25, a second processing cup 26, a third processing cup 27, and a fourth processing cup 28. The first processing cup 25 is located outside the guide cup 6. The first processing cup 25 is arranged in an annular shape around the holding portion 15 (an example of a substrate holding portion). The first processing cup 25 is fixed to the chamber 3. A first storage portion 30 is formed at the bottom of the first processing cup 25. The first storage portion 30 (an example of a storage portion) is formed in an annular shape. The first storage portion 30 is formed along the circumferential direction of the first processing cup 25. The first storage portion 30 is formed, for example, such that the outer depth is greater than the inner depth. The first storage portion 30 stores the second processing liquid supplied to the wafer W. The second processing liquid (an example of a processing liquid) that flows between the first processing cup 25 and the second processing cup 26 accumulates in the first storage portion 30.

[0026] A suction port 31 and a drain port 32 are formed at the bottom of the first processing cup 25. The suction port 31 is formed on the inside of the first storage section 30. Multiple suction ports 31 are formed. Multiple suction ports 31 are provided along the circumferential direction of the first storage section 30 (an example of a storage section). In the height direction, the suction ports 31 are provided between the drain port 32 and the first exhaust port 45, which will be described later. Note that the suction port 31 may be formed by the first processing cup 25 and the outer circumferential wall of the recovery section 8. That is, the suction port 31 may be formed between the two members, the first processing cup 25 and the recovery section 8. A suction line 33 is connected to the suction port 31. The suction line 33 is different from the exhaust line 51, which will be described later.

[0027] The drain port 32 is formed in the first storage section 30 (an example of a storage section). The drain port 32 is formed on the outside of the first storage section 30. The drain port 32 is located outside the suction port 31. The drain port 32 is located at the deepest point of the first storage section 30. Multiple drain ports 32 are formed. Multiple drain ports 32 are provided along the circumferential direction of the first storage section 30. A drain line 34 is connected to the drain port 32.

[0028] A cleaning fluid supply unit 35 is formed in the first processing cup 25. The cleaning fluid supply unit 35 supplies cleaning fluid to the outer wall of the second processing cup 26. The cleaning fluid supply unit 35 includes a cleaning fluid flow path 35a and a plurality of discharge ports 35b. The cleaning fluid flow path 35a is formed in an annular shape along the first processing cup 25. The plurality of discharge ports 35b discharge cleaning fluid toward the upper end of the second processing cup 26. The cleaning fluid is, for example, DIW. The plurality of discharge ports 35b are arranged along the circumferential direction of the first processing cup 25. Cleaning fluid is supplied to the cleaning fluid flow path 35a from a cleaning fluid supply source 35c. The flow rate of the cleaning fluid supplied from the cleaning fluid supply source 35c is adjusted by a fifth adjustment unit 35d. The fifth adjustment unit 35d includes a flow control valve and an on / off valve, etc.

[0029] The second processing cup 26 is provided in an annular shape around the holding portion 15 (an example of a substrate holding portion). The second processing cup 26 is provided inside the first processing cup 25. The second processing cup 26 is provided below the first processing cup 25. The second processing cup 26 is movable in the vertical direction. The second processing cup 26 is raised and lowered in the vertical direction by a lifting device 37. The lifting device 37 includes, for example, a lifting cylinder. The lifting device 37 may also include a motor or the like.

[0030] The second processing cup 26 is movable between a first position and a second position. The first position is a given raised position. When the second processing cup 26 is in the first position, it contacts the first processing cup 25. When the second processing cup 26 is in the first position, the upper end of the second processing cup 26 contacts the first processing cup 25. Specifically, the second processing cup 26 contacts the first processing cup 25 so that no processing liquid or anything else flows between the first processing cup 25 and the second processing cup 26.

[0031] The second position is a given lowered position. When the second processing cup 26 is in the second position, the second processing cup 26 does not come into contact with the first processing cup 25, but it comes into contact with the third processing cup 27. When the second processing cup 26 is in the second position, the second processing cup 26 comes into contact with the third processing cup 27 so that no processing liquid or anything else flows between the second processing cup 26 and the third processing cup 27.

[0032] The second processing cup 26 comprises a sealing member 40 and a communication port 41. The sealing member 40 is provided on the lower end side of the second processing cup 26. The sealing member 40 moves up and down in accordance with the raising and lowering of the second processing cup 26. The sealing member 40 is moved by a lifting device 37 (an example of a moving device). The sealing member 40 opens or closes the first exhaust port 45, which will be described later. The communication port 41 is provided, for example, above the sealing member 40. The communication port 41 is provided so as to be able to communicate with the first exhaust port 45. The sealing member 40 and the communication port 41 are provided at locations corresponding to the first exhaust port 45. The outer wall of the sealing member 40 protrudes outward at its lower end. The sealing member 40 guides the second processing liquid flowing between the first processing cup 25 and the second processing cup 26 to the outside. The sealing member 40 guides the second processing liquid so that it does not flow into the suction port 31.

[0033] The third processing cup 27 is provided in an annular shape around the holding portion 15. The third processing cup 27 is provided inside the second processing cup 26. The third processing cup 27 is raised and lowered vertically by a lifting device (not shown). The lifting device includes, for example, a lifting cylinder. The lifting device may also include a motor or the like.

[0034] The third processing cup 27 is movable to a third position and a fourth position by a lifting device. The third position is a given lowered position. When the third processing cup 27 is in the third position, it contacts the fourth processing cup 28. The fourth position is a given raised position. When the third processing cup 27 is in the fourth position, it contacts the second processing cup 26 but does not contact the fourth processing cup 28. When the third processing cup 27 is in the fourth position, the second processing cup 26 is in the first position.

[0035] The fourth processing cup 28 is connected to the recovery unit 8. The fourth processing cup 28 is fixed to the chamber 3 via the recovery unit 8.

[0036] The recovery section 8 is located below the second processing cup 26 and the third processing cup 27. The recovery section 8 is formed in an annular shape around the support column 16. The recovery section 8 is located inside the first processing cup 25. The recovery section 8 has a second storage section 43 and a third storage section 44.

[0037] The second storage section 43 is located inside the first storage section 30. The second storage section 43 is formed in an annular shape. The second storage section 43 is formed along the circumferential direction of the second processing cup 26 and the third processing cup 27. An outlet (not shown) is formed at the bottom of the second storage section 43 for discharging the processing liquid accumulated in the second storage section 43.

[0038] The third storage section 44 is located inside the second storage section 43. The third storage section 44 is formed in an annular shape. The third storage section 44 is formed along the circumferential direction of the third processing cup 27 and the fourth processing cup 28. An outlet (not shown) is formed at the bottom of the third storage section 44 for discharging the processing liquid accumulated in the third storage section 44.

[0039] The recovery section 8 is formed with a first exhaust port 45, a second exhaust port 46, a third exhaust port 47, a first exhaust passage 48, a second exhaust passage 49, and a third exhaust passage 50.

[0040] The first exhaust port 45 is formed in the outer circumferential wall of the recovery section 8. The first exhaust port 45 is located below the second processing cup 26. The first exhaust port 45 is provided to exhaust the gas between the first processing cup 25 and the second processing cup 26. Multiple first exhaust ports 45 are provided along the circumferential direction of the recovery section 8. The first exhaust ports 45 communicate with the first exhaust passage 48. The first exhaust passage 48 is located outside the second storage section 43.

[0041] The second exhaust port 46 is located inside the first exhaust port 45. The second exhaust port 46 is located in an area isolated from the first exhaust port 45. The second exhaust port 46 is located to exhaust gas inside the second processing cup 26. The second exhaust port 46 is located to exhaust gas between the second processing cup 26 and the third processing cup 27. Multiple second exhaust ports 46 are provided along the circumferential direction of the recovery section 8. The second exhaust port 46 communicates with the second exhaust passage 49. The second exhaust passage 49 is located inside the second storage section 43 and outside the third storage section 44.

[0042] The third exhaust port 47 is located inside the second exhaust port 46. The third exhaust port 47 is located in an area isolated from the first exhaust port 45 and the second exhaust port 46. The third exhaust port 47 is located to exhaust the gas between the third processing cup 27 and the fourth processing cup 28. Multiple third exhaust ports 47 are provided along the circumferential direction of the recovery section 8. The third exhaust port 47 communicates with the third exhaust passage 50. The third exhaust passage 50 is located inside the third storage section 44.

[0043] The first exhaust passage 48, the second exhaust passage 49, and the third exhaust passage 50 merge at the lower end of the recovery section 8 and are connected to the exhaust line 51. That is, the first exhaust port 45, the second exhaust port 46, and the third exhaust port 47 are connected to the same exhaust line 51.

[0044] The suction unit 9 is provided in the suction line 33 connected to the suction port 31. The suction unit 9 draws gas from the suction port 31 between the first processing cup 25 and the second processing cup 26. The suction unit 9 is, for example, an ejector. The suction unit 9 may also be a suction pump or the like.

[0045] The exhaust switching unit 10 will be described with reference to Figure 2. Figure 2 is a diagram showing the configuration of the exhaust switching unit 10 according to the embodiment. The exhaust switching unit 10 comprises an outer casing 60, an inner casing 61, and a drive unit 62. The outer casing 60 is cylindrical. The outer casing 60 has an inlet 60a, a first outlet 60b, a second outlet 60c, and a third outlet 60d. The inlet 60a is formed on one end face in the axial direction. An exhaust line 51 is connected to the outer casing 60. Specifically, the exhaust line 51 is connected to the inlet 60a of the outer casing 60.

[0046] The first outlet 60b, the second outlet 60c, and the third outlet 60d are formed on the outer circumferential wall of the exterior portion 60. The first outlet 60b, the second outlet 60c, and the third outlet 60d are arranged in line along the axial direction of the exhaust switching portion 10.

[0047] The first outlet 60b, the second outlet 60c, and the third outlet 60d are connected to a plurality of individual exhaust lines 63a to 63c. The first outlet 60b is connected to the first individual exhaust line 63a. The second outlet 60c is connected to the second individual exhaust line 63b. The third outlet 60d is connected to the third individual exhaust line 63c. The exhaust line 51 is connected to the plurality of individual exhaust lines 63a to 63c via the exhaust switching unit 10.

[0048] The interior section 61 is cylindrical. The interior section 61 is housed in the exterior section 60. The interior section 61 is rotated relative to the exterior section 60 by the drive section 62. By rotating the interior section 61 relative to the exterior section 60, the communication state between the exhaust line 51 and the multiple individual exhaust lines 63a to 63c is switched. The interior section 61 has a first inlet 61a, a second inlet 61b, a third inlet (not shown), a fourth outlet 61c, a fifth outlet 61d, and a sixth outlet 61e.

[0049] The first inlet 61a, the second inlet 61b, and the third inlet are formed on one end face in the axial direction. The first inlet 61a, the second inlet 61b, and the third inlet are formed on the face facing the end face of the outer casing 60 in which the inlet 60a is formed. The first inlet 61a, the second inlet 61b, and the third inlet are arranged in a line along the circumferential direction of the interior casing 61. As the interior casing 61 rotates, the communication state of the first inlet 61a, the second inlet 61b, and the third inlet with the inlet 60a of the outer casing 60 is switched. In other words, the interior casing 61 includes a plurality of inlets 61a, 61b whose communication state with the exhaust line 51 is switched according to the rotation position.

[0050] The fourth outlet 61c, the fifth outlet 61d, and the sixth outlet 61e are formed on the outer circumferential wall of the interior section 61. The fourth outlet 61c, the fifth outlet 61d, and the sixth outlet 61e are arranged along the axial direction of the exhaust switching section 10. The fourth outlet 61c is formed to communicate with the first outlet 60b of the exterior section 60. The fifth outlet 61d is formed to communicate with the second outlet 60c of the exterior section 60. The sixth outlet 61e is formed to communicate with the third outlet 60d of the exterior section 60.

[0051] The interior section 61 is equipped with partition walls 65. The partition walls 65 divide the interior of the interior section 61 into multiple chambers 66a to 66c corresponding to multiple inlets 61a and 61b. The partition walls 65 divide the interior of the interior section 61 into a first chamber 66a, a second chamber 66b, and a third chamber 66c. The first chamber 66a communicates with the first inlet 61a and the fourth outlet 61c. The second chamber 66b communicates with the second inlet 61b and the fifth outlet 61d. The third chamber 66c communicates with the third inlet and the sixth outlet 61e.

[0052] Multiple pairs of sealing members 67a to 67d are provided between the exterior part 60 and the interior part 61. Each pair of sealing members 67a to 67d is provided along the outer circumferential wall of the interior part 61. The pairs of sealing members 67a to 67d are, for example, lip seals. The pairs of sealing members 67a to 67d are provided to prevent gas discharged from each outlet 61c to 61e from flowing into the other outlets 61c to 61e. The pairs of sealing members 67a to 67d are purged. For example, the sealing performance is improved by injecting air between the pairs of sealing members 67a.

[0053] Furthermore, sealing members are provided around the first inlet 61a, the second inlet 61b, and the third inlet to prevent gas flowing in from the inlet 60a of the outer casing 60 from flowing into multiple of the inlets 60a among the first inlet 61a, the second inlet 61b, and the third inlet.

[0054] The drive unit 62 rotates the interior unit 61. The drive unit 62 includes, for example, a motor and a shaft that transmits the rotation of the motor. The drive unit 62 also includes a reduction mechanism that reduces the rotation of the motor.

[0055] When an organic gas (organic atmosphere) is exhausted through the exhaust line 51, the drive unit 62 rotates so that the inlet 60a of the outer casing 60 and the first inlet 61a of the inner casing 61 are in communication. In other words, when an organic gas is exhausted through the exhaust line 51, the inner casing 61 is rotated so that the organic gas flows into the first individual exhaust line 63a.

[0056] When an acidic gas (acidic atmosphere) is exhausted through the exhaust line 51, the drive unit 62 rotates the interior part 61 so that the inlet 60a of the exterior part 60 and the second inlet 61b of the interior part 61 are in communication. In other words, when an acidic gas is exhausted through the exhaust line 51, the interior part 61 is rotated so that the acidic gas flows into the second individual exhaust line 63b.

[0057] When an alkaline gas (alkaline atmosphere) is exhausted through the exhaust line 51, the drive unit 62 rotates the interior part 61 so that the inlet 60a of the exterior part 60 and the third inlet of the interior part 61 are in communication. In other words, when an alkaline gas is exhausted through the exhaust line 51, the interior part 61 is rotated so that the alkaline gas flows into the third individual exhaust line 63c.

[0058] Returning to Figure 1, the control device 11 is, for example, a computer and comprises a control unit 11a and a storage unit 11b. The storage unit 11b stores programs that control various processes performed in the substrate processing device 1. The control unit 11a controls the operation of the substrate processing device 1 by reading and executing the programs stored in the storage unit 11b. The control unit 11a causes the processing unit 2 to execute each process. The control unit 11a controls the transport arm to transport the wafer W. The control unit 11a controls the suction unit 9, the drive unit 17, the lifting device 37, and the drive unit 62, etc.

[0059] Such a program may have been recorded on a computer-readable storage medium and installed from that storage medium to the storage unit 11b of the control device 11. Examples of computer-readable storage mediums include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0060] Next, the processing of wafer W in the processing unit 2 according to the embodiment will be described. Here, an example will be described in which a first process and a second process are performed on wafer W in the processing unit 2. In the first process, a first processing liquid, for example, DHF, is supplied to wafer W and the process is performed. In the second process, a second processing liquid, for example, IPA, is supplied to wafer W and the process is performed.

[0061] In the first process, the first processing liquid is supplied to the wafer W, and then the DIW is supplied to the wafer W. In the first process, the first processing liquid and the DIW are supplied to the wafer W while the wafer W is rotating. In the first process, the second processing cup 26 is in the first position, as shown in Figure 3. The third processing cup 27 is in the third position. Figure 3 is a diagram showing the state in which the first process is executed in the processing unit 2 according to the embodiment.

[0062] In the first process, the first processing liquid and DIW supplied to the wafer W flow between the second processing cup 26 and the third processing cup 27, as shown by the dashed arrows, and are stored in the second storage section 43. The first processing liquid and DIW stored in the second storage section 43 are discharged from an outlet (not shown) connected to the second storage section 43. The second processing cup 26 is configured in the first position to allow the first processing liquid supplied to the wafer W (an example of a substrate) to flow into the inside of the second processing cup 26.

[0063] In the first process, the gas between the second processing cup 26 and the third processing cup 27 is exhausted from the second exhaust port 46 through the second exhaust passage 49 and the exhaust line 51 to the exhaust switching unit 10, as indicated by the dashed arrow. In the exhaust switching unit 10, the interior part 61 (see Figure 2) is rotated so that the inlet 60a (see Figure 2) of the exterior part 60 (see Figure 2) and the second inlet 61b (see Figure 2) of the interior part 61 are in communication. The gas exhausted via the exhaust line 51 is exhausted from the second chamber 66b (see Figure 2) through the fifth outlet 61d (see Figure 2) of the interior part 61 and the second outlet 60c (see Figure 2) of the exterior part 60 to the second individual exhaust line 63b (see Figure 2).

[0064] In the first treatment, the second treatment cup 26 is in the first position, so that the first treatment liquid and DIW do not flow between the first treatment cup 25 and the second treatment cup 26. Also, when the second treatment cup 26 is in the first position, the first exhaust port 45 is closed by the sealing member 40 of the second treatment cup 26. In other words, the first position is also the position in which the first exhaust port 45 is closed by the sealing member 40. By closing the first exhaust port 45 with the sealing member 40, the gas between the first treatment cup 25 and the second treatment cup 26 is prevented from being exhausted through the exhaust line 51.

[0065] In the first process, the gas between the first processing cup 25 and the second processing cup 26 is exhausted by the suction unit 9 through the suction port 31 and suction line 33, as indicated by the dashed arrow.

[0066] In the second process, after the second processing liquid is supplied to the wafer W, the wafer W is rotated while the supply of the second processing liquid is stopped, and the wafer W is dried. In the second process, the second processing liquid is supplied to the wafer W while the wafer W is rotating. In the second process, the second processing cup 26 is in the second position, as shown in Figure 4. The third processing cup 27 is in the third position. Figure 4 is a diagram showing the state in which the second process is performed in the processing unit 2 according to the embodiment.

[0067] In the second process, the second processing liquid and DIW supplied to the wafer W flow between the first processing cup 25 and the second processing cup 26, as shown by the dashed arrows, and are stored in the first storage section 30. That is, the second processing cup 26 is configured to allow the second processing liquid supplied to the wafer W (an example of a substrate) to flow between the first processing cup 25 and the second processing cup 26 at the second position. The second processing liquid and DIW stored in the first storage section 30 are discharged from the drain port 32 and the drain line 34.

[0068] When the second processing cup 26 is in the second position, the first exhaust port 45 is not closed by the sealing member 40 of the second processing cup 26, but remains open. Specifically, when the second processing cup 26 is in the second position, the communication port 41 and the first exhaust port 45 are in communication. That is, the second position is the position that connects the communication port 41 and the first exhaust port 45. In the second processing, the gas between the first processing cup 25 and the second processing cup 26 flows from the first exhaust port 45 through the first exhaust passage 48 and the exhaust line 51 to the exhaust switching section 10, as indicated by the dashed arrow. In the exhaust switching section 10, the interior section 61 is rotated so that the inlet 60a of the exterior section 60 (see Figure 2) and the first inlet 61a of the interior section 61 (see Figure 2) are in communication. The gas exhausted via the exhaust line 51 is discharged from the first chamber 66a (see Figure 2) through the fourth outlet 61c (see Figure 2) of the interior part 61 and the first outlet 60b (see Figure 2) of the exterior part 60 into the first individual exhaust line 63a (see Figure 2).

[0069] In the second process, suction is not performed by the suction unit 9, and the gas between the first processing cup 25 and the second processing cup 26 is not exhausted through the suction port 31 and the suction line 33. However, in the second process, suction may be performed by the suction unit 9, and the gas between the first processing cup 25 and the second processing cup 26 may be exhausted through the suction port 31 and the suction line 33.

[0070] In the second treatment, the second treatment cup 26 is in the second position, so the second treatment liquid and DIW do not flow between the second treatment cup 26 and the third treatment cup 27.

[0071] In the second process, cleaning liquid is discharged from the discharge port 35b of the cleaning liquid supply unit 35 toward the upper end of the second processing cup 26. The cleaning liquid discharged toward the upper end of the second processing cup 26 flows along the outer wall of the second processing cup 26, cleaning the outer wall of the second processing cup 26. The cleaning liquid then flows the second processing liquid adhering to the outer wall of the second processing cup 26, and the second processing liquid adhering to the outer wall of the second processing cup 26, into the first storage unit 30.

[0072] Next, the wafer W processing according to the embodiment will be described with reference to Figure 5. Figure 5 is a flowchart illustrating the wafer processing according to the embodiment.

[0073] The control unit 11a executes the loading process (S100). The control unit 11a transports the wafer W to the chamber 3 using the transport arm. The wafer W transported to the chamber 3 is held horizontally by the holding part 15 of the substrate holding mechanism 4.

[0074] The control unit 11a performs the first process (S101). The control unit 11a sets the second processing cup 26 to the first position. The second processing cup 26 may also be in the first position during the loading process. The control unit 11a rotates the wafer W while holding it horizontally with the holding part 15 of the substrate holding mechanism 4. The control unit 11a supplies the first processing liquid to the wafer W. After supplying the first processing liquid to the wafer W, the control unit 11a stops supplying the first processing liquid and supplies DIW.

[0075] When the second processing cup 26 is in the first position, the first exhaust port 45 of the recovery unit 8 is closed by the sealing member 40. When the control unit 11a flows the first processing liquid (an example of a processing liquid) into the second processing cup 26, it controls the lifting device 37 (an example of a moving device) so that the sealing member 40 closes the first exhaust port 45.

[0076] Furthermore, the control unit 11a rotates the interior part 61 in the exhaust switching unit 10 so that the second inlet 61b of the interior part 61 and the inlet 60a of the exterior part 60 are in communication. As a result, the gas between the second processing cup 26 and the third processing cup 27 is exhausted to the second individual exhaust line 63b via the second exhaust port 46, the second exhaust passage 49, the exhaust line 51, and the exhaust switching unit 10.

[0077] Furthermore, the control unit 11a causes the suction unit 9 to draw in the gas between the first processing cup 25 and the second processing cup 26. When the first processing liquid (an example of a processing liquid) is flowed into the second processing cup 26, the control unit 11a controls the suction unit 9 to exhaust gas from the suction port 31. By drawing in the gas between the first processing cup 25 and the second processing cup 26 with the suction unit 9, the flow of gas between the first processing cup 25 and the second processing cup 26 into the first exhaust port 45 is suppressed.

[0078] The control unit 11a performs the second process (S102). The control unit 11a sets the second processing cup 26 to the second position. The control unit 11a rotates the wafer W and supplies the second processing liquid to the wafer W. After supplying the second processing liquid to the wafer W, the control unit 11a stops supplying the second processing liquid and rotates the wafer W to dry it.

[0079] As the second processing cup 26 moves to the second position, the first exhaust port 45 of the recovery unit 8 communicates with the communication port 41. The control unit 11a also rotates the interior unit 61 in the exhaust switching unit 10 so that the first inlet 61a of the interior unit 61 communicates with the inlet 60a of the exterior unit 60. As a result, the gas between the first processing cup 25 and the second processing cup 26 is exhausted to the first individual exhaust line 63a via the communication port 41, the first exhaust port 45, the first exhaust passage 48, the exhaust line 51, and the exhaust switching unit 10.

[0080] In the second process, the control unit 11a causes the cleaning liquid supply unit 35 to discharge the cleaning liquid toward the upper end of the second processing cup 26. When the control unit 11a flows the second processing liquid (an example of a processing liquid) between the first processing cup 25 and the second processing cup 26, it controls the cleaning liquid supply unit 35 to discharge the cleaning liquid. This removes the second processing liquid adhering to the outer wall of the second processing cup 26, and the second processing liquid adhering to the outer wall of the second processing cup 26.

[0081] The control unit 11a executes the unloading process (S103). The control unit 11a unloads the wafer W from the chamber 3 using the transport arm.

[0082] The substrate processing apparatus 1 comprises a holding section 15 (an example of a substrate holding section), a processing liquid supply section 5, a first processing cup 25, a second processing cup 26, a drain port 32, a first exhaust port 45, a second exhaust port 46, and a suction port 31. The holding section 15 holds a wafer W (an example of a substrate) horizontally. The processing liquid supply section 5 supplies processing liquid to the wafer W held horizontally by the holding section 15. The first processing cup 25 is provided in an annular shape around the holding section 15. The second processing cup 26 is provided in an annular shape around the holding section 15 and is located inside the first processing cup 25. The drain port 32 is formed in a first storage section 30 (an example of a storage section) where the second processing liquid (an example of a processing liquid) flowing between the first processing cup 25 and the second processing cup 26 accumulates. The first exhaust port 45 is provided to exhaust the gas between the first processing cup 25 and the second processing cup 26. The second exhaust port 46 is provided inside the first exhaust port 45 and is provided to exhaust the gas inside the second processing cup 26. The suction port 31 is provided in the height direction between the drain port 32 and the first exhaust port 45.

[0083] As a result, the substrate processing apparatus 1 can exhaust the gas between the first processing cup 25 and the second processing cup 26 through the suction port 31. Therefore, when the substrate processing apparatus 1 exhausts gas from the second exhaust port 46, it can prevent the gas between the first processing cup 25 and the second processing cup 26 from flowing into the second exhaust port 46. Consequently, when the substrate processing apparatus 1 processes a wafer W using multiple processing liquids, it can prevent the components of the multiple processing liquids from mixing into the exhausted gas.

[0084] The first exhaust port 45 and the second exhaust port 46 are connected to the same exhaust line 51. The suction port 31 is connected to a suction line 33 that is different from the exhaust line 51.

[0085] This prevents the gas exhausted by the suction port 31 from entering the exhaust line 51.

[0086] The first storage section 30 (an example of a storage section) is formed in an annular shape. Multiple suction ports 31 are provided along the circumferential direction of the first storage section 30.

[0087] As a result, the substrate processing apparatus 1 can exhaust the gas between the first processing cup 25 and the second processing cup 26 through multiple suction ports 31. Therefore, the substrate processing apparatus 1 can suppress the amount of gas remaining between the first processing cup 25 and the second processing cup 26.

[0088] The substrate processing apparatus 1 includes a sealing member 40. The sealing member 40 opens or closes the first exhaust port 45.

[0089] As a result, the substrate processing apparatus 1 can open the first exhaust port 45 with the sealing member 40, allowing gas to be exhausted from between the first processing cup 25 and the second processing cup 26 via the exhaust line 51 from the first exhaust port 45. When the substrate processing apparatus 1 exhausts gas from the inside of the second processing cup 26 through the second exhaust port 46, it is possible to suppress the mixing of gas between the first processing cup 25 and the second processing cup 26 with the gas being exhausted through the second exhaust port 46.

[0090] The first exhaust port 45 is located below the second processing cup 26. The second processing cup 26 includes a sealing member 40 and a communication port 41. The communication port 41 is capable of communicating with the first exhaust port 45. The second processing cup 26 is movable between a first position and a second position. The first position is the position in which the first exhaust port 45 is closed by the sealing member 40. The second position is the position in which the communication port 41 and the first exhaust port 45 are in communication.

[0091] As a result, the substrate processing apparatus 1 can switch the communication state between the first exhaust port 45 and the exhaust line 51 by switching the second processing cup 26 between the first position and the second position. The substrate processing apparatus 1 can open or close the first exhaust port 45 in accordance with the movement of the second processing cup 26.

[0092] The second processing cup 26 is movable in the vertical direction. In the first position, the second processing cup 26 is configured to allow the first processing liquid supplied to the wafer W (an example of a substrate) to flow into the inside of the second processing cup 26. In the second position, which is lower than the first position, the second processing cup 26 is configured to allow the second processing liquid supplied to the wafer W to flow between the first processing cup 25 and the second processing cup 26.

[0093] This allows the substrate processing apparatus 1 to switch the discharge destination of the first and second processing liquids by moving the second processing cup 26 in the vertical direction.

[0094] The exhaust line 51 is connected to a plurality of individual exhaust lines 63a to 63c via an exhaust switching unit 10. The exhaust switching unit 10 comprises an outer part 60 and an inner part 61. The exhaust line 51 is connected to the outer part 60. The inner part 61 is housed in the outer part 60 and switches the communication state between the exhaust line 51 and the plurality of individual exhaust lines 63a to 63c by rotating relative to the outer part 60. The inner part 61 comprises a plurality of inlets 60a, 61b and a partition wall 65. The communication state between the plurality of inlets 60a, 61b and the exhaust line 51 is switched according to the rotation position. The partition wall 65 partitions the interior of the inner part 61 into a plurality of chambers 66a to 66c corresponding to the plurality of inlets 60a, 61b.

[0095] As a result, the substrate processing device 1 can exhaust gases into separate exhaust lines 63a to 63c depending on the type of gas being exhausted.

[0096] The substrate processing apparatus 1 includes a cleaning liquid supply unit 35. The cleaning liquid supply unit 35 is formed in the first processing cup 25 and supplies cleaning liquid to the outer wall of the second processing cup 26. The cleaning liquid supply unit 35 has a plurality of discharge ports 35b. The plurality of discharge ports 35b discharge cleaning liquid toward the upper end of the second processing cup 26. The plurality of discharge ports 35b are arranged along the circumferential direction of the second processing cup 26.

[0097] As a result, the substrate processing apparatus 1 can suppress the adhesion of processing liquid to the outer wall of the second processing cup 26. Furthermore, the substrate processing apparatus 1 can clean the processing liquid that has adhered to the outer wall of the second processing cup 26 with a cleaning solution. Therefore, the substrate processing apparatus 1 can reduce the amount of processing liquid contained in the gas between the first processing cup 25 and the second processing cup 26, for example.

[0098] The modified processing unit 2 may be capable of discharging DIW toward the back surface of the wafer W. For example, in the second processing, the processing unit 2 may discharge DIW toward the back surface of the wafer W and clean the back surface of the wafer W.

[0099] In the modified processing unit 2, the first exhaust port 45 and the sealing member 40 may be provided on the first processing cup 25. In addition, in the modified processing unit 2, the suction port 31 may be provided on the outside of the first storage section 30.

[0100] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of Symbols]

[0101] 1. Substrate processing device 5. Processing liquid supply unit 9 Suction part 10 Exhaust switching section 11 Control device 11a Control Unit 25 First Processing Cup 26 Second Processing Cup 30. First Storage Section (Storage Section) 31 Suction port 32 Drain port 33 Suction lines 35 Cleaning fluid supply unit 35b Discharge port 37. Lifting device (moving device) 40 Sealing member 41 Connecting opening 45. First exhaust port 46. ​​Second exhaust port 51 Exhaust line 60 Exterior part 61 Interior 61a 1st inlet (inlet) 61b 2nd inlet (inlet) 63a First individual exhaust line (individual exhaust line) 63b Second individual exhaust line (individual exhaust line) 63c Third Individual Exhaust Line (Individual Exhaust Line) 65 partition walls

Claims

1. An exterior section to which an exhaust line for receiving the discharged gas and a plurality of individual exhaust lines for discharging the gas are connected, An interior part housed in the exterior part and rotated relative to the exterior part, thereby switching the communication state between the exhaust line and the plurality of individual exhaust lines. Equipped with, The aforementioned interior section is Multiple inlets whose communication state with the exhaust line is switched according to the rotation position, Partition walls divide the interior of the interior section into multiple rooms corresponding to the multiple inlets. Equipped with, The aforementioned exterior part is, A plurality of exhaust ports are provided according to the plurality of individual exhaust lines, and each is connected to a corresponding individual exhaust line, The inlet connected to the exhaust line and An exhaust switching device equipped with this device.

2. The exterior portion and the interior portion are provided with a plurality of pairs of sealing members, The exhaust switching device according to claim 1, wherein the pair of sealing members are provided along the outer circumference of the interior part.

3. The exhaust switching device according to claim 2, wherein a purge fluid is injected between the pair of sealing members.

4. The exhaust switching device according to any one of claims 1 to 3, wherein the plurality of chambers are each connected to a corresponding exhaust port.

5. The plurality of inlets are provided on one end face of the interior part, arranged in a line along the circumferential direction of the interior part. The exhaust switching device according to any one of claims 1 to 4, wherein the plurality of exhaust ports are provided on the outer peripheral wall of the exterior part, arranged in line with the axial direction of the interior part.

6. The interior part is equipped with a drive unit for rotating the interior part, The exhaust switching device according to any one of claims 1 to 5, wherein the drive unit is capable of controlling the rotational position of the interior unit.

7. The exhaust switching device according to any one of claims 1 to 6, wherein the interior part selectively discharges the gas flowing in from the exhaust line to one of the plurality of individual exhaust lines according to the rotation position.

8. Exhaust switching device according to any one of claims 1 to 7 Equipped with, The exhaust switching device is a substrate processing apparatus into which the gas exhausted by substrate processing flows in through the exhaust line.

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