Substrate processing method and substrate processing apparatus

Abstract

The present invention provides a substrate processing method and a substrate processing apparatus for selectively forming films containing tungsten and carbon. [Solution] A substrate processing method comprising the steps of: preparing a substrate having an uneven pattern; generating a plasma of a processing gas containing a film-forming gas containing WF6 gas and CO gas, and an inert gas, and selectively forming a film containing tungsten and carbon on the tops of the protrusions of the substrate.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus.

Background Art

[0002] Patent Document 1 discloses an etching method for forming a tungsten-containing deposit having etching resistance.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] On one aspect, the present disclosure provides a substrate processing method and a substrate processing apparatus for selectively forming a film containing tungsten and carbon.

Means for Solving the Problems

[0005] In order to solve the above problems, according to one aspect, there is provided a substrate processing method including a step of preparing a substrate having a concavo-convex pattern, and a step of generating a plasma of a processing gas including a film-forming gas containing WF6 gas and CO gas and an inert gas, and selectively forming a film containing tungsten and carbon on the top of the convex portion of the substrate.

Effects of the Invention

[0006] According to one aspect, it is possible to provide a substrate processing method and a substrate processing apparatus for selectively forming a film containing tungsten and carbon.

Brief Description of the Drawings

[0007] [Figure 1] A schematic cross-sectional view showing an example of a substrate processing apparatus according to the present exemplary embodiment. [Figure 2] An example flowchart illustrating a substrate processing method. [Figure 3] An example of a schematic cross-sectional view of the substrate to be prepared. [Figure 4] An example of a schematic cross-sectional view of a substrate after a film containing tungsten and carbon has been formed on it. [Figure 5] An example of a cross-sectional view showing the shape of a film containing tungsten and carbon. [Figure 6] An example of a cross-sectional view showing the shape of a film containing tungsten and carbon. [Figure 7] An example of a cross-sectional view showing the shape of a tungsten-containing film as a reference example. [Figure 8] An example of a cross-sectional view showing the shape of a film containing tungsten and carbon. [Figure 9] An example of a cross-sectional view showing the shape of a film containing tungsten and carbon. [Figure 10] An example of a cross-sectional view showing the shape of a film containing tungsten and carbon. [Figure 11] An example of a cross-sectional view showing the shape of a film containing tungsten and carbon. [Modes for carrying out the invention]

[0008] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0009] [Substrate Processing Device 1] The substrate processing apparatus 1 according to this actual device configuration will be explained with reference to Figure 1. Figure 1 is a schematic cross-sectional view showing an example of the substrate processing apparatus 1 according to this actual device configuration. The substrate processing apparatus 1 is a device that selectively deposits a film containing tungsten (W) and carbon (C) on a substrate W such as a wafer by the PECVD (Plasma-Enhanced Chemical Vapor Deposition) method in a processing container 2 under reduced pressure. The film containing tungsten and carbon is selectively formed on the tops 211 of the protrusions formed on the substrate W (see Figures 3 and 4 described later).

[0010] The substrate processing apparatus 1 includes a substantially cylindrical, airtight processing container 2. An exhaust chamber 21 is provided in the central part of the bottom wall of the processing container 2.

[0011] The exhaust chamber 21 has a shape that protrudes downward, for example, a substantially cylindrical shape. An exhaust passage 22 is connected to the exhaust chamber 21, for example, on the side of the exhaust chamber 21. An exhaust section 24 is connected to the exhaust passage 22 via a pressure adjustment section 23. The pressure adjustment section 23 includes a pressure adjustment valve, for example, a butterfly valve. The exhaust passage 22 is configured so that the pressure inside the processing container 2 can be reduced by the exhaust section 24. A transport port 25 is provided on the side of the processing container 2. The transport port 25 is configured to be openable and closable by a gate valve 26. The substrate W is transported in and out between the processing container 2 and the transport chamber (not shown) through the transport port 25.

[0012] The processing container 2 is provided with a mounting table (substrate support) 3 for holding the substrate W in a substantially horizontal position. The mounting table 3 is formed in a substantially circular shape in plan view and is supported by a support member 31. A substantially circular recess 32 is formed on the surface of the mounting table 3 for mounting a substrate W with, for example, a diameter of 300 mm. The recess 32 has an inner diameter that is slightly larger than the diameter of the substrate W (for example, about 1 mm to 4 mm). The depth of the recess 32 is set to be substantially the same as the thickness of the substrate W. The mounting table 3 is formed of a ceramic material such as aluminum nitride (AlN). Alternatively, the mounting table 3 may be formed of a metallic material such as nickel (Ni). Instead of the recess 32, a guide ring may be provided on the peripheral edge of the surface of the mounting table 3 to guide the substrate W.

[0013] A lower electrode 33 is embedded in the mounting base 3. A temperature control mechanism 34 is embedded below the lower electrode 33. The temperature control mechanism 34 adjusts the substrate W placed on the mounting base 3 to a set temperature based on a control signal from the control unit 9. If the entire mounting base 3 is made of metal, the entire mounting base 3 functions as the lower electrode, so it is not necessary to embed the lower electrode 33 in the mounting base 3.

[0014] An RF power supply 35 is connected to the lower electrode 33 via a matcher 351. The RF power supply 35 applies high-frequency power (LF; Low Frequency) having a frequency lower than that of the RF power supply 51 described later to the lower electrode 33. The high-frequency power generated by the RF power supply 35 is used as bias high-frequency power for attracting ions to the substrate W. The frequency of the RF power supply 35 is, for example, 13.56 MHz. Note that the lower electrode 33 may be configured such that a bias DC power supply is connected thereto and bias DC power or pulsed DC power is supplied, or the lower electrode 33 may be grounded.

[0015] The mounting stage 3 is provided with a plurality (for example, three) of lifting pins 41 for holding and lifting the substrate W placed on the mounting stage 3. The material of the lifting pins 41 may be, for example, ceramics such as alumina (Al2O3) or quartz. The lower end of the lifting pin 41 is attached to a support plate 42. The support plate 42 is connected to a lifting mechanism 44 provided outside the processing container 2 via a lifting shaft 43.

[0016] The lifting mechanism 44 is installed, for example, at the lower part of the exhaust chamber 21. A bellows 45 is provided between an opening 21a for the lifting shaft 43 formed in the lower surface of the exhaust chamber 21 and the lifting mechanism 44. The shape of the support plate 42 may be a shape that can be lifted and lowered without interfering with the support member 31 of the mounting stage 3. The lifting pin 41 is configured to be liftable between the upper side of the surface of the mounting stage 3 and the lower side of the surface of the mounting stage 3 by the lifting mechanism 44. In other words, the lifting pin 41 is configured to be able to protrude from the upper surface of the mounting stage 3.

[0017] Further, the lower end portion of the support member 31 penetrates through an opening 21b of the exhaust chamber 21 and is supported by a lifting mechanism 46 via a lifting plate 47 disposed below the processing container 2. A bellows 48 is provided between the bottom of the exhaust chamber 21 and the lifting plate 47, and the airtightness inside the processing container 2 is maintained by the vertical movement of the lifting plate 47.

[0018] The lifting mechanism 46 raises and lowers the lifting plate 47, thereby raising and lowering the mounting platform 3. This allows the gap between the mounting platform 3 and the gas supply unit 5 to be adjusted.

[0019] A gas supply unit 5 is provided on the top wall 27 of the processing container 2 via an insulating member 28. The gas supply unit 5 forms the upper electrode and faces the lower electrode 33. RF power supplies 51 and 56 (plasma generation units) are connected to the gas supply unit 5 via matching units 511 and 561. RF power supply 51 applies high-frequency power to the upper electrode (gas supply unit 5). The high-frequency power generated by RF power supply 51 is used as high-frequency power for plasma generation necessary for film deposition on the substrate W. The frequency of RF power supply 51 is, for example, 13 MHz to 220 MHz (for example, 13 MHz). RF power supply 56 also applies high-frequency power to the upper electrode (gas supply unit 5). The high-frequency power generated by RF power supply 56 is used as high-frequency power for plasma generation necessary for film deposition on the substrate W. The frequency of RF power supply 56 is lower than the frequency of RF power supply 51 (for example, 450 kHz). RF power is supplied to the upper electrode (gas supply unit 5) from the RF power supply 51 and / or RF power supply 56, thereby generating an RF electric field between the upper electrode (gas supply unit 5) and the lower electrode 33. The RF power supply may consist of two (two frequencies) or one (one frequency). The gas supply unit 5 includes a hollow gas diffusion chamber 52. Numerous holes 53 for distributing and supplying the processing gas into the processing container 2 are evenly spaced on the lower surface of the gas diffusion chamber 52. A heating mechanism 54 is embedded above the gas diffusion chamber 52 in the gas supply unit 5. The heating mechanism 54 is heated to a set temperature by power supplied from a power supply unit (not shown) based on a control signal from the control unit 9.

[0020] A gas supply passage 6 is provided in the gas diffusion chamber 52. The gas supply passage 6 is in communication with the gas diffusion chamber 52. Upstream of the gas supply passage 6, a gas source (gas supply source) 61 is connected via a gas line 62. The gas source 61 includes, for example, a supply source for various processing gases, a mass flow controller, and valves (none of which are shown). Various processing gases are introduced from the gas source 61 into the gas diffusion chamber 52 via the gas line 62. The various processing gases are then supplied from the gas diffusion chamber 52 into the processing space of the processing container 2 via holes 53.

[0021] Various processing gases include film-forming gases. Film-forming gases include gases containing tungsten (W) and gases containing carbon (C). Specifically, film-forming gases include tungsten hexafluoride (WF6) gas and carbon monoxide (CO) gas.

[0022] Furthermore, the film-forming gas may contain a gas containing hydrogen (H). Specifically, the film-forming gas may contain hydrogen (H2) gas.

[0023] Furthermore, the various processing gases may also contain inert gases. Specifically, the inert gas may include argon (Ar) gas, helium (He) gas, neon (Ne) gas, or any other gas.

[0024] Furthermore, each type of processing gas may contain a carrier gas (for example, at least one selected from Ar, He, N2, H2, etc.).

[0025] The substrate processing apparatus 1 includes a control unit 9. The control unit 9 is, for example, a computer and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or auxiliary storage device and controls the operation of the substrate processing apparatus 1. The control unit 9 may be located inside or outside the substrate processing apparatus 1. If the control unit 9 is located outside the substrate processing apparatus 1, the control unit 9 can control the substrate processing apparatus 1 by communication means such as wired or wireless.

[0026] [Substrate Processing Method] Next, an example of a substrate processing method will be explained using Figures 2 to 4. Figure 2 is an example of a flowchart showing a substrate processing method.

[0027] In step S101, the substrate W is prepared. Here, the control unit 9 controls a substrate transport device (not shown) to place the substrate W on the mounting table 3 inside the processing container 2. The control unit 9 also controls the pressure adjustment unit 23 to set the pressure inside the processing container 2 to a predetermined pressure. Furthermore, the control unit 9 controls the temperature control mechanism 34 to set the temperature of the mounting table 3 (in other words, the temperature of the substrate W placed on the mounting table 3) to a predetermined temperature.

[0028] Figure 3 is an example of a schematic cross-sectional view of the substrate W to be prepared.

[0029] The substrate W has a pattern of irregularities. In other words, the substrate W has recesses such as holes and trenches. In the example shown in Figure 3, the substrate W has a base film 200 and an upper film 210 formed on the base film 200. The base film 200 is, for example, a silicon oxide film (SiO2). The upper film 210 is, for example, an amorphous silicon film (a-Si). However, the materials of the base film 200 and the upper film 210 are not limited to these materials.

[0030] Furthermore, the upper film 210 has a pattern of openings 215. In other words, the substrate W has an uneven pattern, with openings 215 of the upper film 210 which are recesses and tops 211 of the upper film 210 which are convex portions. For example, the base film 200 is a film to be etched, and the upper film 210 having the pattern of openings 215 may be a film used as a mask when etching the base film 200.

[0031] Furthermore, the base film 200 may be a single layer film or a laminated film (for example, a laminated film in which silicon oxide films and silicon nitride films are alternately laminated). Also, the top film 210 may be a single layer film or a laminated film (for example, a laminated film including a carbon film (e.g., SOC: Spin on carbon) and a silicon-containing film (e.g., SOG: Spin on Glass) formed thereon).

[0032] Furthermore, the substrate W only needs to have a pattern shape of bumps and dips, and is not limited to a configuration in which a pattern of openings 215 that penetrate to the lower surface of the upper film 210 is formed and the base film 200 is exposed at the bottom of the openings 215, as shown in the schematic cross-sectional view of the substrate W in Figure 3. For example, the substrate W may have a configuration in which recesses that do not penetrate to the lower surface are formed on the upper side of the upper film 210.

[0033] In step S102, a film 250 containing tungsten and carbon is selectively deposited on the top 211 of the substrate W. Here, a plasma is generated of a deposition gas containing a tungsten (W) gas (specifically WF6), a carbon (C) gas (specifically CO), and a processing gas containing an inert gas (e.g., Ar). The tungsten (W) gas precursor (WF6) is reduced with the carbon (C) gas (CO) by the PECVD method, thereby selectively depositing a film 250 containing tungsten and carbon on the top 211 of the substrate W. Furthermore, by reducing the tungsten (W) gas precursor (WF6) with the carbon (C) gas (CO), the removal of fluorine (F) from the film 250 is promoted, thereby improving the film quality of the film 250.

[0034] The control unit 9 controls the gas source 61 to supply processing gas (film-forming gas, inert gas) from the gas supply unit 5 into the processing container 2, and controls the RF power supply 51 and / or RF power supply 56 to supply RF power for plasma generation to the upper electrode, thereby generating plasma of the processing gas in the processing container 2. Then, when the substrate W placed on the mounting stage 3 is exposed to the plasma of the processing gas, a film 250 containing tungsten and carbon is selectively formed on the top portion 211 of the substrate W.

[0035] Figure 4 is an example of a schematic cross-sectional view of the substrate W after a film 250 containing tungsten and carbon has been formed on it.

[0036] As shown in Figure 4, a film 250 containing tungsten and carbon is selectively formed on the top 211 of the upper film 210.

[0037] Additionally, a gas containing hydrogen (H) (specifically H2) may be added to the film-forming gas. The tungsten (W) gas precursor (WF6) is reduced by a gas containing carbon (C) (CO) and a gas containing hydrogen (H) (H2).

[0038] Here, the carbon composition ratio in the tungsten and carbon-containing membrane 250 is controlled by controlling the flow rate ratio of CO gas to H2 gas. Specifically, the larger the flow rate ratio of CO gas to H2 gas, the greater the carbon composition ratio in the tungsten and carbon-containing membrane 250.

[0039] Furthermore, the shape of the tungsten and carbon-containing membrane 250 is controlled by controlling the flow rate ratio of CO gas to H2 gas. Specifically, the larger the flow rate ratio of CO gas to H2 gas, the more selectively the tungsten and carbon-containing membrane 250 is formed on the top portion 211.

[0040] After the film formation process of the tungsten and carbon-containing film 250, the control unit 9 controls the substrate transport device (not shown) to transport the substrate W out of the processing container 2. This completes the substrate processing shown in Figure 2.

[0041] Furthermore, the tungsten and carbon-containing film 250 can be used as a protective film to protect the top 211 of the upper film 210 when etching the underlayer film 200 using the upper film 210 having the opening 215 as a mask. This suppresses the wear of the upper film 210 during etching. In other words, compared to not forming the tungsten and carbon-containing film 250, forming the tungsten and carbon-containing film 250 makes it possible to reduce the thickness of the upper film 210. This reduces the aspect ratio of the recesses and improves the etching shape formed on the underlayer film 200.

[0042] Furthermore, a protective film containing tungsten and carbon, which is a metal-containing carbon film with high etching resistance, can be formed as a protective film to protect the top portion 211 of the upper film 210.

[0043] [Shape of film 250] Next, the relationship between the flow rate ratio of CO and H2 in the processing gas (film formation gas) and the shape of the film 250 containing tungsten and carbon will be explained using Figure 5. Figure 5 is an example of a cross-sectional view showing the shape of the film 250 containing tungsten and carbon. Here, a base film 200 composed of SiO2 and an upper film 210 composed of amorphous silicon were formed on the substrate W, and a bumpy pattern with a Line CD (critical dimension) to Space CD ratio (L / S) of 2 was formed on the upper film 210. Film 250 was formed on the substrate W with the bumpy pattern formed thereon, using H2:CO flow rate ratios of 100:0, 50:50, 10:90, and 0:100.

[0044] In the example shown in Figure 5, Flow rate of WF6: 5 sccm Total flow rates of H2 and CO: 100 sccm Flow rate of Ar (inert gas): 10 sccm Frequency and power of high-frequency power for plasma generation: 450kHz, 50W Pressure inside processing container 2: 0.5 Torr Temperature of substrate W: 100℃ That's what I decided.

[0045] Furthermore, the film thickness formed on the upper surface (top 211) of the convex portion (TOP), the film thickness formed on the side wall of the concave portion (opening 215) (Side), and the film thickness formed on the bottom surface of the concave portion (opening 215) (Btm) were measured for the formed film 250. Note that the units for TOP / Side / Btm in Figure 5 are [nm].

[0046] As shown in Figure 5, it was demonstrated that the shape of the membrane 250 can be controlled by controlling the flow rate ratio of H2 and CO.

[0047] Specifically, when the H2:CO flow rate ratio is "100:0", reducing the WF6 precursor with H2 reduces the fluorine (F) content in the film, allowing for the formation of a high-quality film 250. On the other hand, as shown in Figure 5, the film 250 is conformally formed not only on the upper surface of the convex portions, but also on the side walls and bottom surfaces of the concave portions.

[0048] In contrast, the lower the flow rate ratio of H2 gas, the greater the amount of film deposited on the top 211 of the protrusion. Specifically, compared to the case where the flow rate ratio of H2:CO is "100:0", when the flow rate ratio of H2:CO is "50:50" and "10:90", the thickness of the film 250 formed on the top 211 of the protrusion can be increased. Thus, by making the flow rate ratio of CO gas to H2 gas (CO / H2) 1 or more, the thickness of the film 250 formed on the top 211 of the protrusion can be increased. Furthermore, the thickness of the film 250 formed on the top 211 of the protrusion can be made thicker than the thickness of the film 250 formed on the bottom surface of the recess.

[0049] Furthermore, high-frequency power for biasing attracts carbon (C) ions toward the substrate W. In the film 250 formed on the top 211 of the convex portion, collisions with carbon (C) ions cause dissociation of fluorine (F) in the film 250 by the carbon (C) ions, improving the film quality. On the other hand, in the film 250 formed on the side walls and bottom of the concave portion, the modification effect by carbon (C) ions is reduced. Therefore, the film quality of the film 250 formed on the side walls and bottom of the concave portion is lower compared to the film 250 formed on the top 211 of the convex portion.

[0050] After forming the film 250, an etching process (for example, plasma etching using CF4 gas and Ar gas) is performed. This causes the film 250 formed on the side walls and bottom surfaces of the recesses to be consumed first compared to the film 250 formed on the top 211 of the protrusions, leaving the film 250 formed on the top 211 of the protrusions. This allows for the selective formation of the film 250 on the top 211 of the protrusions. In other words, the film 250 can be formed vertically from the top 211 of the protrusions. Note that the etching process of the film 250 formed on the side walls and bottom surfaces of the recesses and the etching process of the undercoat film 200 using the upper film 210 as a mask may be separate processes or the same process.

[0051] Furthermore, when WF6 and CO are used as the film-forming gas (with a flow rate ratio of H2:CO of 0:100), the formation of the film 250 on the side walls of the recesses can be suppressed. That is, the film 250 can be formed vertically from the top 211 of the protrusions. In addition, the film thickness of the film 250 formed on the top 211 of the protrusions can be made thicker than the film thickness of the film 250 formed on the bottom surface of the recesses. Moreover, by reducing the WF6 precursor with CO, the fluorine (F) content in the film can be reduced, and a film 250 with good film quality can be formed.

[0052] Figure 6 shows an example of a cross-sectional view illustrating the shape of film 250 containing tungsten and carbon. In this example, WF6 gas and CO gas were used as the film deposition gases.

[0053] In other words, in the example in Figure 6, Flow rate of WF6: 5 sccm CO flow rate: 100 sccm Flow rate of Ar (inert gas): 10 sccm Frequency and power of the high-frequency power used for plasma generation: 13MHz, 50W Pressure inside processing container 2: 0.5 [Torr] Temperature of substrate W: 100℃ That's what I decided.

[0054] Figure 7 shows an example of a cross-sectional view illustrating the shape of a tungsten-containing film 250, a reference example. In this example, only WF6 gas was used as the film deposition gas.

[0055] In other words, in the example in Figure 7, Flow rate of WF6: 5 sccm Flow rate of Ar (inert gas): 10 sccm Frequency and power of the high-frequency power used for plasma generation: 13MHz, 50W Pressure inside processing container 2: 0.5 [Torr] Temperature of substrate W: 100℃ That's what I decided.

[0056] As shown by comparing Figures 6 and 7, the film thickness of the film 250 formed on the top 211 of the protrusion can be increased when using WF6 gas and CO gas (see Figure 6) compared to when using only WF6 gas (see Figure 7). Furthermore, in the reference example of the tungsten-containing film 250 (see Figure 7), since no reducing agent (H2, CO) is used, the film has a high fluorine (F) content and low film quality. In contrast, the tungsten and carbon-containing film 250 (see Figure 6) reduces the fluorine (F) content in the film and improves film quality.

[0057] Figure 8 shows an example of a cross-sectional view illustrating the shape of film 250 containing tungsten and carbon. Here, the temperature of the substrate W was increased compared to the conditions shown in Figure 6.

[0058] In other words, in the example in Figure 8, Flow rate of WF6: 5 sccm CO flow rate: 100 sccm Flow rate of Ar (inert gas): 10 sccm Frequency and power of the high-frequency power used for plasma generation: 13MHz, 50W Pressure inside processing container 2: 0.5 [Torr] Temperature of substrate W: 300℃ That's what I decided.

[0059] As shown in Figures 6 and 8, the film thickness of the film 250 formed on the top 211 of the protrusion can be increased when the temperature of the substrate W during film formation is within a temperature range of 300°C or less. That is, the film 250 can be formed vertically from the top 211 of the protrusion. Furthermore, the film thickness of the film 250 formed on the top 211 of the protrusion can be increased when the temperature of the substrate W during film formation is within a temperature range of 100°C to 300°C.

[0060] Figure 9 shows an example of a cross-sectional view illustrating the shape of the tungsten and carbon-containing membrane 250. Here, the pressure inside the processing vessel 2 was increased compared to the conditions shown in Figure 8.

[0061] In other words, in the example in Figure 9, Flow rate of WF6: 5 sccm CO flow rate: 100 sccm Flow rate of Ar (inert gas): 10 sccm Frequency and power of the high-frequency power used for plasma generation: 13MHz, 50W Pressure inside processing container 2: 2 [Torr] Temperature of substrate W: 200℃ That's what I decided.

[0062] Figure 10 is an example of a cross-sectional view showing the shape of the film 250 containing tungsten and carbon. Here, the pressure inside the processing vessel 2 was increased compared to the conditions shown in Figure 8, and the temperature of the substrate W was increased compared to the conditions shown in Figure 9.

[0063] In other words, in the example in Figure 10, Flow rate of WF6: 5 sccm CO flow rate: 100 sccm Flow rate of Ar (inert gas): 10 sccm Frequency and power of the high-frequency power used for plasma generation: 13MHz, 50W Pressure inside processing container 2: 2 [Torr] Temperature of substrate W: 300℃ That's what I decided.

[0064] Figure 11 is an example of a cross-sectional view showing the shape of the tungsten and carbon-containing membrane 250. Here, the pressure inside the processing vessel 2 was increased compared to the conditions shown in Figure 6.

[0065] In other words, in the example in Figure 11, Flow rate of WF6: 5 sccm CO flow rate: 100 sccm Flow rate of Ar (inert gas): 10 sccm Frequency and power of the high-frequency power used for plasma generation: 13MHz, 50W Pressure inside processing container 2: 4 [Torr] Temperature of substrate W: 100℃ That's what I decided.

[0066] As shown in Figures 6 and 11, the thickness of the film 250 formed on the top 211 of the protrusion can be increased when the pressure inside the processing container 2 during film formation is within the pressure range of 0.5 Torr to 5 Torr. That is, the film 250 can be formed vertically from the top 211 of the protrusion.

[0067] The above describes a substrate processing method for forming a film containing tungsten and carbon. However, this disclosure is not limited to the embodiments described above, and various modifications and improvements are possible within the scope of the gist of this disclosure as described in the claims. [Explanation of Symbols]

[0068] W board 1. Substrate processing apparatus 2 Processing container 3. Mounting platform (substrate support) 5. Gas supply unit (upper electrode) 6. Gas supply lines 61. Gas source (gas supply source) 9. Control Unit 33 Lower electrode 35 RF power supply 51 RF Power Supply (Plasma Generation Unit) 56 RF Power Supply (Plasma Generation Unit) 200 Undercoat 210 Upper membrane 211 Top 215 Aperture 250 membrane

Claims

1. A step of preparing a substrate having an uneven pattern, WF ６ The process comprises generating a plasma of a processing gas containing a film-forming gas and CO gas, and an inert gas, and selectively forming a film containing tungsten and carbon on the tops of the protrusions of the substrate. Substrate processing method.

2. The aforementioned film-forming gas is H ２ Further containing gas, The substrate processing method according to claim 1.

3. The inert gas includes any of Ar gas, He gas, Ne gas, etc. The substrate processing method according to claim 1.

4. The aforementioned H ２ The larger the flow rate ratio of the CO gas to the gas flow rate, the greater the carbon composition ratio in the tungsten and carbon-containing membrane. The substrate processing method according to claim 2.

5. The aforementioned H ２ The larger the flow rate ratio of the CO gas to the gas flow rate, the more selectively the formation of the tungsten and carbon-containing film on the top. The substrate processing method according to claim 2.

6. The aforementioned H ２ The flow rate ratio of the CO gas flow rate to the gas flow rate is 1 or more. The substrate processing method according to claim 2.

7. The process further comprises an etching step after the step of forming the film containing tungsten and carbon, The etching step leaves the film formed on the top. The substrate processing method according to claim 6.

8. The step of forming the aforementioned tungsten-carbon film is: The temperature of the substrate is within a temperature range of 300°C or less when forming the film. The substrate processing method according to claim 1.

9. The step of forming the aforementioned tungsten-carbon film is: The film is formed within a pressure range of 0.5 Torr to 5 Torr. The substrate processing method according to claim 1.

10. A substrate processing apparatus for forming a film containing tungsten and carbon, A substrate support that supports the substrate, A processing container for housing the substrate support, A gas supply unit that supplies processing gas into the processing container, A plasma generation unit that generates plasma from the aforementioned processing gas, It comprises a control unit and, The control unit, A step of placing a substrate having an uneven pattern onto the substrate support, WF ６ The process involves generating a plasma of a processing gas containing a film-forming gas containing CO and an inert gas, and selectively forming a film containing tungsten and carbon on the tops of the protrusions of the substrate. Circuit board processing equipment.

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