Semiconductor equipment

Abstract

To provide a semiconductor device capable of improving its characteristics. [Solution] According to the embodiment, the semiconductor device includes a semiconductor member, a first insulating layer, a first conductive member, a second insulating layer, a first via resistor, a first conductive layer, and a second conductive layer. The first conductive layer includes a first part, a second part, and a third part. The second part includes meander wiring.

Description

Technical Field

[0001] Embodiments of the present invention relate to semiconductor devices.

Background Art

[0002] For example, in semiconductor devices such as capacitors using silicon, improvement in characteristics is desired.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present invention provide a semiconductor device capable of improving characteristics.

Means for Solving the Problems

[0005] According to an embodiment of the present invention, the semiconductor device includes a semiconductor member, a first insulating layer, a first conductive member, a second insulating layer, a first via resistor, a first conductive layer, and a second conductive layer. The first insulating layer is provided on the semiconductor member. The first conductive member is provided on the first insulating layer. The second insulating layer is provided on the first conductive member. The first via resistor is provided on a part of the first conductive member. The first via resistor penetrates a part of the second insulating layer in a first direction. The first via resistor is electrically connected to the first conductive member. The first conductive layer is provided on the first via resistor. The first conductive layer is electrically connected to the first via resistor. The second conductive layer is electrically connected to the semiconductor member. The semiconductor member is provided on the second conductive layer. The first conductive layer includes a first part, a second part, and a third part. The second part is located between the first part and the third part. The third part is located above the first via resistor. The first, second, and third parts are electrically connected to the first via resistor. The second part includes meander wiring. [Brief explanation of the drawing]

[0006] [Figure 1A] Figure 1A is a schematic plan view illustrating a semiconductor device according to an embodiment. [Figure 1B] Figure 1B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. [Figure 2] Figure 2 is an equivalent circuit diagram illustrating a semiconductor device according to the embodiment. [Figure 3A] Figure 3A is a schematic plan view illustrating a semiconductor device according to an embodiment. [Figure 3B] Figure 3B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. [Figure 4A] Figure 4A is a schematic plan view illustrating a semiconductor device according to an embodiment. [Figure 4B] Figure 4B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. [Figure 5A]Figure 5A is a schematic plan view illustrating a semiconductor device according to an embodiment. [Figure 5B] Figure 5B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. [Figure 6A] Figure 6A is a schematic plan view illustrating a semiconductor device according to an embodiment. [Figure 6B] Figure 6B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. [Figure 7A] Figure 7A is a schematic plan view illustrating a semiconductor device according to an embodiment. [Figure 7B] Figure 7B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. [Figure 8] Figure 8 is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. [Figure 9] Figure 9 is an equivalent circuit diagram illustrating a semiconductor device according to the embodiment. [Figure 10A] Figure 10A is a schematic plan view illustrating a semiconductor device according to an embodiment. [Figure 10B] Figure 10B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. [Figure 11A] Figure 11A is a schematic plan view illustrating a semiconductor device according to an embodiment. [Figure 11B] Figure 11B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. [Modes for carrying out the invention]

[0007] The embodiments of the present invention will be described below with reference to the drawings. Drawings are schematic or conceptual representations, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may differ between drawings. In this specification and in each figure, elements similar to those described above are denoted by the same reference numerals with respect to previously shown figures, and detailed explanations are omitted as appropriate.

[0008] FIG. 1A is a schematic plan view illustrating a semiconductor device according to an embodiment. FIG. 1B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. FIG. 1B is a cross-sectional view taken along line I-I of FIG. 1A. As shown in FIGS. 1A and 2, a semiconductor device 101 according to the first embodiment includes a semiconductor member 10, a first insulating layer 31, a first conductive member 20, a second insulating layer 32, and a first via resistance portion 41.

[0009] One direction perpendicular to the X-axis direction is defined as the Y-axis direction. One direction perpendicular to the X-axis direction and the Y-axis direction is defined as the Z-axis direction. The Z-axis direction is, for example, the first direction D1. The X-axis direction is, for example, the second direction D2.

[0010] The first insulating layer 31 is provided on the semiconductor member 10. The first conductive member 20 is provided on the first insulating layer 31. The second insulating layer 32 is provided on the first conductive member 20. The first via resistance portion 41 is provided on a part of the first conductive member 20. The first via resistance portion 41 penetrates a part of the second insulating layer 32 in the first direction D1. The first via resistance portion 41 is electrically connected to the first conductive member 20.

[0011] The semiconductor member 10 functions as, for example, an electrode. The first conductive member 20 functions as, for example, another electrode. A voltage may be applied between the semiconductor member 10 and the first conductive member 20. The semiconductor member 10, the first conductive member 20, and the first insulating layer 31 function as, for example, a capacitor. The first via resistance portion 41 is a resistor. The semiconductor device 101 is, for example, a capacitor (condenser) including a resistor. The semiconductor device 101 is, for example, an RC snubber circuit.

[0012] FIG. 2 is an equivalent circuit diagram illustrating a semiconductor device according to an embodiment. Capacitor C2 shown in Figure 2 corresponds to the semiconductor member 10, the first conductive member 20, and the first insulating layer 31. Capacitor C3 corresponds to the semiconductor member 10, the first conductive member 20, and the first insulating layer 31. Resistor R2 corresponds to the first conductive member 20. Resistor R3 corresponds to the first conductive member 20. Resistor R1 corresponds to the first via resistor 41.

[0013] In semiconductor device 101, via resistors (first via resistor section 41) are used. Compared to using Al wiring as a resistor, this reduces the drain voltage overshoot when the voltage is turned off due to its low parasitic inductance, thereby reducing losses when the voltage is turned off. Which effect is achieved is determined by the combination of resistance and capacitance values. In addition, since there are fewer manufacturing steps compared to using poly resistors, manufacturing costs can be reduced.

[0014] The semiconductor component 10 may contain silicon. The semiconductor device 101 is, for example, a silicon capacitor. The semiconductor component 10 contains one of the impurities phosphorus, arsenic, or boron. The concentration of the above impurities is 1E19cm². -3 That concludes the explanation. The above concentration may apply to the entire semiconductor member 10, or to the surface of the first conductive region 21 formed on the semiconductor member 10.

[0015] The first conductive member 20 is, for example, polysilicon or polysilicon germanium, and may contain phosphorus, arsenic, or boron.

[0016] The via resistors, such as the first via resistor 41, may consist of one or multiple via resistors.

[0017] The total area VS of the first via resistor 41 is 1000 μm². 2 More than 3000000μm 2 The following is sufficient. The total area VS is, for example, the area along the XY plane.

[0018] The first conductive member 20 may include a first conductive region 21 and a plurality of protrusions 22. The plurality of protrusions 22 are provided between the semiconductor member 10 and the first conductive region 21. The first conductive member 20 may function as a resistor.

[0019] As shown in Figures 1A and 1B, the semiconductor device 101 may further include a first conductive layer 51 and a second conductive layer 52.

[0020] The first conductive layer 51 is provided on the first via resistor 41. The first conductive layer 51 is electrically connected to the first via resistor 41.

[0021] The second conductive layer 52 is electrically connected to the semiconductor member 10. The semiconductor member 10 is provided on the second conductive layer 52.

[0022] The first conductive layer 51 and the second conductive layer 52 function as terminals.

[0023] Figure 3A is a schematic plan view illustrating a semiconductor device according to an embodiment. Figure 3B is a schematic cross-sectional view illustrating a semiconductor device according to the embodiment. Figure 3B is a cross-sectional view taken along line II-II of Figure 3A. As shown in Figures 3A and 3B, the first conductive layer 51 may further include a first part 51a, a second part 51b, and a third part 51c. The configuration of the semiconductor device 102, excluding this, may be the same as the configuration of the semiconductor device 101.

[0024] Part 2 51b is located between Part 1 51a and Part 3 51c. Part 3 51c is located above the first via resistor 41.

[0025] Part 1 51a, Part 2 51b, and Part 3 51c are electrically connected to the first via resistor 41.

[0026] Part 2, section 51b functions as a resistor.

[0027] The first part 51a is electrically connected to the first conductive member 20 via the second part 51b, the third part 51c, and the first via resistor 41.

[0028] Part 2, section 51b may include meander wiring.

[0029] The first insulating layer 31 may contain Si, O, N, Hf, Ti, Mg, and Al. The second insulating layer 32 may contain Si, O, and N. The first via resistor 41 may contain any of Al, Si, Cu, Ti, N, W, Co, and Ni. The first part 51a may contain Al. The second part 51b may contain any of Al, Si, Cu, Ti, N, W, Co, and Ni. The third part 51c may contain any of Al, Si, Cu, Ti, N, W, Co, and Ni. The second conductive layer 52 may contain any of Al, Ti, Ni, Au, Ag, and Pd.

[0030] Figure 4A is a schematic plan view illustrating a semiconductor device according to an embodiment. Figure 4B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. Figure 4B is a cross-sectional view taken along line III-III of Figure 4A. As shown in Figures 4A and 4B, the semiconductor device 103 may include a third insulating layer 33, a first wiring resistor 61, a second via resistor 42, a third conductive layer 53, and a connection portion 70. The first via resistor 41 penetrates the second insulating layer 32 and the third insulating layer 33. The configuration of the semiconductor device 103, excluding this, may be the same as that of the semiconductor device 101.

[0031] The third insulating layer 33 is provided on a portion of the first conductive member 20. The third insulating layer 33 may or may not be present in the portion where the first via resistor 41 penetrates the second insulating layer 32.

[0032] The first wiring resistance section 61 is provided on the third insulating layer 33.

[0033] The second via resistor 42 is provided on a portion of the first wiring resistor 61. The second via resistor 42 penetrates a portion of the second insulating layer 32 in the first direction D1. The second via resistor 42 is electrically connected to the first conductive layer 51 via the first wiring resistor 61.

[0034] The third conductive layer 53 is provided on top of the second via resistor 42.

[0035] The resistance of the first wiring resistor 61 may be greater than the resistance of the first via resistor 41. The resistance of the first wiring resistor 61 may be greater than the resistance of the second via resistor 42.

[0036] The third insulating layer 33 may contain Si, O, and N. The second via resistor 42 may contain Al. The third conductive layer 53 may contain any of Al, Si, Cu, Ti, N, W, Co, and Ni. The first wiring resistor 61 may contain either polysilicon or polysilicon germanium. The connection part 70 may contain any of Al, Si, Cu, Ti, N, W, Co, and Ni.

[0037] In the semiconductor device 103 shown in Figures 4A and 4B, the second conductive layer 52 and the third conductive layer 53 function as terminals. The third conductive layer 53 is electrically connected to the first conductive member 20 via the second via resistor 42, the first wiring resistor 61, the connection 70, the first conductive layer 51, and the first via resistor 41.

[0038] Figure 5A is a schematic plan view illustrating a semiconductor device according to an embodiment. Figure 5B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. Figure 5B is a cross-sectional view taken along line IV-IV of Figure 5A. As shown in Figures 5A and 5B, the semiconductor device 104 may further include a third via resistor 43 and a fourth conductive layer 54. In the semiconductor device 104 shown in Figures 5A and 5B, the first conductive layer 51 and the fourth conductive layer 54 function as terminals. The configuration of the semiconductor device 104, excluding these, may be the same as that of the semiconductor device 101.

[0039] The third via resistor 43 is provided on the semiconductor member 10. The third via resistor 43 penetrates a portion of the first insulating layer 31 and a portion of the second insulating layer 32 in the first direction D1. The third via resistor 43 is electrically connected to the semiconductor member 10.

[0040] The fourth conductive layer 54 is provided on the third via resistor 43. The fourth conductive layer 54 is electrically connected to the semiconductor member 10 via the third via resistor 43.

[0041] The third via resistor 43 may contain any of Al, Si, Cu, Ti, N, W, Co, or Ni. The fourth conductive layer 54 may contain any of Al, Si, Cu, Ti, N, W, Co, or Ni.

[0042] Figure 6A is a schematic plan view illustrating a semiconductor device according to an embodiment. Figure 6B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. Figure 6B is a cross-sectional view of VV in Figure 6A. As shown in Figures 6A and 6B, the first conductive layer 51 may further include a first part 51a, a second part 51b, and a third part 51c. The configuration of the semiconductor device 105, excluding this, may be the same as that of the semiconductor device 104.

[0043] Part 2 51b is located between Part 1 51a and Part 3 51c. Part 3 51c is located above the first via resistor 41. Part 2 51b may contain Al.

[0044] The first part 51a, the second part 51b, and the third part 51c are electrically connected to the first via resistor 41. The second part 51b functions as a resistor. The first part 51a is electrically connected to the first conductive member 20 via the second part 51b, the third part 51c, and the first via resistor 41.

[0045] Part 1, section 51a may include meander wiring.

[0046] Figure 7A is a schematic plan view illustrating a semiconductor device according to an embodiment. Figure 7B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. Figure 7B is a cross-sectional view taken along the line VI-VI of Figure 7A. As shown in Figures 7A and 7B, the semiconductor device 106 may further include a third insulating layer 33, a first wiring resistance section 61, a second via resistance section 42, a third conductive layer 53, and a connection section 70. In the semiconductor device 106 shown in Figures 7A and 7B, the third conductive layer 53 and the fourth conductive layer 54 function as terminals. The third conductive layer 53 is electrically connected to the first conductive member 20 via the second via resistance section 42, the first wiring resistance section 61, the connection section 70, the first conductive layer 51, and the first via resistance section 41. The configuration of the semiconductor device 106, excluding this, may be the same as that of the semiconductor device 104.

[0047] The third insulating layer 33 is provided on a portion of the first conductive member 20.

[0048] The first wiring resistance section 61 is provided on a part of the third insulating layer 33.

[0049] The second via resistor 42 is provided on top of the first wiring resistor 61. The second via resistor 42 penetrates a portion of the second insulating layer 32 in the first direction D1. The second via resistor 42 is electrically connected to the first wiring resistor 61.

[0050] The third conductive layer 53 is provided on top of the second via resistor 42.

[0051] The resistance of the first wiring resistor 61 may be greater than the resistance of the first via resistor 41. The resistance of the first wiring resistor 61 may be greater than the resistance of the second via resistor 42.

[0052] The cutoff frequency, which is determined by the reciprocal of the product of resistance and capacitance, should be at least twice the operating frequency.

[0053] The cutoff frequency is derived from the delay time based on the electrical resistance R and capacitance C obtained in Equation 1 (1) below. R1=ρs×L1 / W, C1=Cs×L1×W (1)fT1=1 / (R1 x C1) R2=ρs×L2 / W, C2=Cs×L2×W (2)fT2=1 / (R2 x C2) L1 and L2 are selected by adjusting the position of the first via resistor 41 so that the operating frequency is more than twice the operating frequency of both. ρs is the sheet resistance of the first conductive member 20. Cs is the capacitance per unit area. L1 is the distance from the center M1 of the first via resistance 41 to one end of the first conductive member 20 in the second direction D2 (see Figure 7). L2 is the distance from the center of the first via resistance 41 to the other end of the first conductive member 20 in the second direction D2 (see Figure 7). W is the width of the first conductive member 20 in the Y direction. L1 × W and L2 × W are the areas of the first conductive member 20.

[0054] The first conductive layer 51 may contain at least one selected from the group consisting of Zr, Hf, Ti, Pd, V, Co, Mo, Cr, W, Ni, Rh, Pt, Ir, N, and Al. This allows for obtaining the desired resistance of the first conductive layer 51.

[0055] Figure 8 is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. Figure 9 is an equivalent circuit diagram illustrating a semiconductor device according to the embodiment. If a single via cannot satisfy the condition R=ρs×L / W and C=Cs×L×W··(3)fT=1 / (R x C) which is more than twice the operating frequency, then multiple via resistors are used. As shown in Figures 8 and 9, the semiconductor device 107 may further include a fourth via resistor 44. In the semiconductor device 107 shown in Figure 8, the first conductive layer 51, the fifth conductive layer 55, and the second conductive layer 52 function as terminals. The configuration of the semiconductor device 107, excluding these, may be the same as that of the semiconductor device 101.

[0056] The fourth via resistor 44 is provided on a portion of the first conductive member 20. The fourth via resistor 44 penetrates a portion of the second insulating layer 32 in the first direction D1. The fourth via resistor 44 is electrically connected to the first conductive member 20.

[0057] The fourth via resistor 44 may contain any of Al, Si, Cu, Ti, N, W, Co, or Ni. The fifth conductive layer 55 may contain any of Al, Si, Cu, Ti, N, W, Co, or Ni.

[0058] Capacitors C2 to C5 shown in Figure 9 correspond to the semiconductor member 10, the first conductive member 20, and the first insulating layer 31. Resistors R2 to R7 correspond to the first conductive member 20. Resistor R1 corresponds to the first via resistor 41. Resistor R2 corresponds to the fourth via resistor 44.

[0059] Figure 10A is a schematic plan view illustrating a semiconductor device according to an embodiment. Figure 10B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. Figure 10B is a cross-sectional view taken along line VII-VII of Figure 10A. As shown in Figures 10A and 10B, in semiconductor device 108, the first conductive layer 51 includes a first part 51a, a second part 51b, and a third part 51c. The second part 51b is located between the first part 51a and the third part 51c. The third part 51c is located on the first via resistor 41. The first part 51a, the second part 51b, and the third part 51c are electrically connected to the first via resistor 41. The configuration of semiconductor device 106, excluding this, may be the same as that of semiconductor device 103.

[0060] Figure 11A is a schematic plan view illustrating a semiconductor device according to an embodiment. Figure 11B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. Figure 11B is a cross-sectional view taken along line VIII-VIII of Figure 11A. As shown in Figures 11A and 11B, in the semiconductor device 109, the first conductive layer 51 includes a first part 51a, a second part 51b, and a third part 51c. The second part 51b is located between the first part 51a and the third part 51c. The third part 51c is located on the first via resistor 41. The first part 51a, the second part 51b, and the third part 51c are electrically connected to the first via resistor 41. The configuration of the semiconductor device 106, excluding this, may be the same as that of the semiconductor device 106.

[0061] According to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0062] The present invention includes the following embodiments.

[0063] (Note 1) Semiconductor components and A first insulating layer provided on the semiconductor member, A first conductive member provided on the first insulating layer, A second insulating layer provided on the first conductive member, A first via resistor is provided on a part of the first conductive member, penetrates a part of the second insulating layer in a first direction, and is electrically connected to the first conductive member, A first conductive layer is provided on the first via resistor and electrically connected to the first via resistor, A second conductive layer electrically connected to the semiconductor member, Equipped with, The semiconductor member is provided on the second conductive layer, The first conductive layer includes a first part, a second part, and a third part. The aforementioned Part 2 is located between the aforementioned Part 1 and Part 3. The third part is located above the first via resistor, The first part, the second part, and the third part are electrically connected to the first via resistor, The second part relates to a semiconductor device including meander wiring.

[0064] (Note 2) Semiconductor components and A first insulating layer provided on the semiconductor member, A first conductive member provided on the first insulating layer, A second insulating layer provided on the first conductive member, A first via resistor is provided on a part of the first conductive member, penetrates a part of the second insulating layer in a first direction, and is electrically connected to the first conductive member, A first conductive layer is provided on the first via resistor and electrically connected to the first via resistor, A second conductive layer electrically connected to the semiconductor member, A third insulating layer provided on a part of the first conductive member, A first wiring resistance section provided on the third insulating layer, A second via resistor is provided on a portion of the first wiring resistor, penetrates a portion of the second insulating layer in the first direction, and is electrically connected to the first conductive layer via the first wiring resistor, A third conductive layer provided on the second via resistor, Equipped with, The semiconductor component is a semiconductor device provided on the second conductive layer.

[0065] (Note 3) Semiconductor components and A first insulating layer provided on the semiconductor member, A first conductive member provided on the first insulating layer, A second insulating layer provided on the first conductive member, A first via resistor is provided on a part of the first conductive member, penetrates a part of the second insulating layer in a first direction, and is electrically connected to the first conductive member, A third via resistor is provided on the semiconductor member, and penetrates the first insulating layer and a part of the second insulating layer in the first direction, and is electrically connected to the semiconductor member. A fourth conductive layer is provided on the third via resistor and electrically connected to the semiconductor member via the third via resistor, Equipped with, The first conductive layer includes a first part, a second part, and a third part. The aforementioned Part 2 is located between the aforementioned Part 1 and Part 3. The third part is located above the first via resistor, The first part, the second part, and the third part are electrically connected to the first via resistor, The second part relates to a semiconductor device including meander wiring.

[0066] (Note 4) Semiconductor components and A first insulating layer provided on the semiconductor member, A first conductive member provided on the first insulating layer, A second insulating layer provided on the first conductive member, A first via resistor is provided on a part of the first conductive member, penetrates a part of the second insulating layer in a first direction, and is electrically connected to the first conductive member, A third via resistor is provided on the semiconductor member, and penetrates a portion of the first insulating layer and a portion of the second insulating layer in the first direction, and is electrically connected to the semiconductor member. A fourth conductive layer is provided on the third via resistor and electrically connected to the semiconductor member via the third via resistor, A first conductive layer is provided on the first via resistor and electrically connected to the first via resistor, A third insulating layer provided on a part of the first conductive member, A first wiring resistance section provided on a part of the third insulating layer, A second via resistor is provided on the first wiring resistor, penetrates a portion of the second insulating layer in the first direction, and is electrically connected to the first conductive layer via the first wiring resistor, A third conductive layer provided on the second via resistor, A semiconductor device equipped with [a specific feature / function].

[0067] (Note 5) The first conductive layer includes a first part, a second part, and a third part. The second part is a semiconductor device as described in Appendix 2 or 4, including meander wiring.

[0068] (Note 6) The resistance of the aforementioned first wiring resistor is greater than the resistance of the aforementioned first via resistor. The semiconductor device according to Appendix 2 or 4, wherein the resistance of the first wiring resistance section is greater than the resistance of the second via resistance section.

[0069] (Note 7) The first conductive layer and the third conductive layer contain a metal, The first wiring resistance section is a semiconductor device as described in Appendix 2 or 4, comprising polysilicon.

[0070] In this specification, "perpendicular" and "parallel" do not mean strictly perpendicular and strictly parallel, but also include variations in the manufacturing process, for example, and it is sufficient if they are substantially perpendicular and substantially parallel.

[0071] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element, such as the semiconductor layer, electrodes, and insulating layer 40, included in the semiconductor device is included within the scope of the present invention as long as the present invention can be implemented in the same manner and similar effects can be obtained by appropriately selecting from the range known to those skilled in the art.

[0072] Furthermore, combinations of two or more elements from any of the specific examples, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.

[0073] Furthermore, all semiconductor devices that a person skilled in the art can implement by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0074] Furthermore, within the scope of the concept of the present invention, a person skilled in the art could conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of the present invention.

[0075] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of symbols]

[0076] 10 Semiconductor materials, 20 First conductive member, 21 First conductive region, 22 Multiple protrusions, 31 First insulating layer, 32 Second insulating layer, 33 Third insulating layer, 41 First via resistor section, 42 Second via resistor section, 43 Third via resistor section, 44 Fourth via resistor section, 51 First conductive layer, 51a First part, 51b Second part, 51c Third part, 52 Second conductive layer, 53 Third conductive layer, 54 Fourth conductive layer, 55 Fifth conductive layer, 61 1st wiring resistance section, 70 Connection part, 101-107 Semiconductor devices, M1: Center of the first via resistor, VS: Total area of ​​the first via resistor

Claims

1. Semiconductor components and A first insulating layer provided on the semiconductor member, A first conductive member provided on the first insulating layer, A second insulating layer provided on the first conductive member, A first via resistor is provided on a part of the first conductive member, penetrates a part of the second insulating layer in a first direction, and is electrically connected to the first conductive member, A first conductive layer is provided on the first via resistor and is electrically connected to the first via resistor, A second conductive layer electrically connected to the semiconductor member, Equipped with, The semiconductor member is provided on the second conductive layer, The first conductive layer includes a first part, a second part, and a third part. The aforementioned Part 2 is located between Part 1 and Part 3. The third part is located above the first via resistor, The first part, the second part, and the third part are electrically connected to the first via resistor, The second part relates to a semiconductor device including meander wiring.

2. Semiconductor components and A first insulating layer provided on the semiconductor member, A first conductive member provided on the first insulating layer, A second insulating layer provided on the first conductive member, A first via resistor is provided on a part of the first conductive member, penetrates a part of the second insulating layer in a first direction, and is electrically connected to the first conductive member, A first conductive layer is provided on the first via resistor and is electrically connected to the first via resistor, A second conductive layer electrically connected to the semiconductor member, A third insulating layer provided on a part of the first conductive member, A first wiring resistance section provided on the third insulating layer, A second via resistor is provided on a portion of the first wiring resistor, penetrates a portion of the second insulating layer in the first direction, and is electrically connected to the first conductive layer via the first wiring resistor, A third conductive layer provided on the second via resistor, Equipped with, The semiconductor component is a semiconductor device provided on the second conductive layer.

3. Semiconductor components and A first insulating layer provided on the semiconductor member, A first conductive member provided on the first insulating layer, A second insulating layer provided on the first conductive member, A first via resistor is provided on a part of the first conductive member, penetrates a part of the second insulating layer in a first direction, and is electrically connected to the first conductive member, A third via resistor is provided on the semiconductor member, penetrates a portion of the first insulating layer and a portion of the second insulating layer in the first direction, and is electrically connected to the semiconductor member. A fourth conductive layer is provided on the third via resistor and electrically connected to the semiconductor member via the third via resistor, A first conductive layer is provided on the first via resistor and is electrically connected to the first via resistor, Equipped with, The first conductive layer includes a first part, a second part, and a third part. The aforementioned Part 2 is located between Part 1 and Part 3. The third part is located above the first via resistor, The first part, the second part, and the third part are electrically connected to the first via resistor, The second part relates to a semiconductor device including meander wiring.

4. Semiconductor components and A first insulating layer provided on the semiconductor member, A first conductive member provided on the first insulating layer, A second insulating layer provided on the first conductive member, A first via resistor is provided on a part of the first conductive member, penetrates a part of the second insulating layer in a first direction, and is electrically connected to the first conductive member, A third via resistor is provided on the semiconductor member, penetrates a portion of the first insulating layer and a portion of the second insulating layer in the first direction, and is electrically connected to the semiconductor member. A fourth conductive layer is provided on the third via resistor and electrically connected to the semiconductor member via the third via resistor, A first conductive layer is provided on the first via resistor and is electrically connected to the first via resistor, A third insulating layer provided on a part of the first conductive member, A first wiring resistance section provided on a part of the third insulating layer, A second via resistor is provided on the first wiring resistor, penetrates a portion of the second insulating layer in the first direction, and is electrically connected to the first conductive layer via the first wiring resistor, A third conductive layer provided on the second via resistor, A semiconductor device equipped with [the necessary components].

5. The first conductive layer includes a first part, a second part, and a third part. The second part is the semiconductor device according to claim 2 or 4, which includes meander wiring.

6. The resistance of the aforementioned first wiring resistor is greater than the resistance of the aforementioned first via resistor. The semiconductor device according to claim 2 or 4, wherein the resistance of the first wiring resistance portion is greater than the resistance of the second via resistance portion.

7. The first conductive layer and the third conductive layer contain a metal, The semiconductor device according to claim 2 or 4, wherein the first wiring resistance portion includes polysilicon.

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