Method for manufacturing inspection equipment and semiconductor device

Abstract

Probe testing is performed on the semiconductor wafer while its temperature is maintained above the desired temperature. [Solution] An inspection apparatus according to one embodiment includes a wafer chuck 17, a probe card 14 facing a semiconductor wafer 1 held by the wafer chuck 17, a support member 40 fixed to the probe card 14, a probe needle 30 supported by the support member 40 and in contact with the electrodes of a semiconductor chip formed on the semiconductor wafer 1, a heater 70 provided on the wafer chuck 17, and a heater 60 provided on the probe card 14.

Description

Technical Field

[0001] The present invention relates to a manufacturing technology of semiconductor devices, and more specifically, to a technology effective when applied to a method for manufacturing a semiconductor device including a process of inspecting electrical characteristics of semiconductor chips formed on a semiconductor wafer.

Background Art

[0002] Patent Document 1 describes an inspection apparatus including a pair of probe cards and a wafer stage, which inspects electrical characteristics of semiconductor chips formed on a semiconductor wafer set on the wafer stage.

[0003] Inspection of the electrical characteristics of semiconductor chips is performed under an environmental temperature set in consideration of the usage environment of a semiconductor device (semiconductor package) including the semiconductor chips. In the following description, the environmental temperature set as described above may be referred to as the "test temperature".

[0004] The test temperature may be below 0 degrees Celsius or above 100 degrees Celsius. Therefore, a cooling system and a heating system are provided in the wafer stage included in the inspection apparatus described in Patent Document 1.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] Even when semiconductor wafers are heated by heaters installed on the stage or chuck on which they are mounted, the temperature of the semiconductor wafer during inspection sometimes falls below the set test temperature. Therefore, in order to further improve the reliability of the inspection, it is necessary to maintain the temperature of the semiconductor wafer at or above the test temperature during inspection.

[0007] Other challenges and novel features will become apparent from the description and accompanying drawings in this specification. [Means for solving the problem]

[0008] In one embodiment of the inspection apparatus, a heater is provided on the probe card facing the semiconductor wafer held in the wafer chuck.

[0009] A method for manufacturing a semiconductor device according to one embodiment includes the steps of heating a semiconductor wafer with a heater provided in a wafer chuck that holds the semiconductor wafer, and heating a probe card facing the semiconductor wafer with a heater provided on the probe card. [Effects of the Invention]

[0010] According to one embodiment, the temperature of the semiconductor wafer during inspection is kept above the test temperature, which can further improve the reliability of the inspection. [Brief explanation of the drawing]

[0011] [Figure 1] This is a schematic diagram showing the configuration of an inspection device according to one embodiment. [Figure 2] Figure 1 is a plan view showing the main surface of a semiconductor wafer. [Figure 3] Figure 2 is a magnified view of the semiconductor chip shown. [Figure 4] This is a schematic diagram showing a magnified view of a part of the prober shown in Figure 1. [Figure 5] This is an explanatory diagram showing the positional relationship between the probe needle and the temperature sensor in one embodiment. [Figure 6] This is an explanatory diagram schematically showing the heating situation by a heater in one embodiment. [Figure 7] This is a process diagram showing an overview of the manufacturing method for a semiconductor device according to one embodiment. [Figure 8] Figure 7 is a process diagram showing the details of the inspection process. [Modes for carrying out the invention]

[0012] In the following embodiments, where necessary for convenience, the description will be divided into multiple sections or embodiments. However, unless otherwise specified, these are not unrelated, and one may be a modification, detail, or supplement to part or all of the other.

[0013] Furthermore, in the following embodiments, when referring to the number of elements (including the number of elements, numerical values, quantities, ranges, etc.), unless specifically stated or clearly limited in principle to a particular number, it is not limited to that particular number, and may be greater than or less than that number.

[0014] Furthermore, it goes without saying that in the following embodiments, the components (including element steps, etc.) are not necessarily essential unless otherwise explicitly stated. Similarly, in the following embodiments, when referring to the shape, positional relationship, etc., of the components, etc., it shall include those that substantially approximate or are similar in shape, etc., unless otherwise explicitly stated or when it is clearly not the case in principle. The same applies to the numerical values ​​and ranges mentioned above.

[0015] In all the drawings illustrating the embodiments, identical or substantially identical components are denoted by the same reference numeral, and repeated descriptions are omitted. Furthermore, to improve readability, hatching may be omitted even in cross-sectional views, and hatching may be included even in plan views.

[0016] <Overview of the inspection device> FIG. 1 is a schematic diagram showing the configuration of an inspection apparatus 10 according to the present embodiment. The inspection apparatus 10 according to the present embodiment is generally called a "prober" and is used for inspecting the electrical characteristics of semiconductor chips formed on a semiconductor wafer. Further, the inspection performed using the inspection apparatus 10 according to the present embodiment is generally called a "probe inspection". Therefore, in the following description, the inspection apparatus 10 may be referred to as a "prober 10". Also, the inspection of the electrical characteristics of semiconductor chips performed using the inspection apparatus 10 may be referred to as a "probe inspection".

[0017] As an example of probe inspection, a data retention test on a semiconductor chip including a memory portion and a logic portion can be cited. However, the object of probe inspection is not limited to semiconductor chips including a memory portion and a logic portion. Also, probe inspection is not limited to data retention tests.

[0018] As shown in FIG. 1, the prober 10 has a housing 11, a test head (tester) 12, an interface ring 13, a probe card 14, a card holder 15, a wafer stage 16, and a wafer chuck 17.

[0019] The test head 12 and the interface ring 13 are electrically connected via wiring. Also, the interface ring 13 and the probe card 14 are electrically connected via other wiring. That is, the test head 12 and the probe card 14 are electrically connected. Note that the test head 12 is connected to the tester main body 18 via a cable.

[0020] The probe card 14 is detachably attached to the card holder 15. The card holder 15 holds and supports the attached probe card 14. More specifically, the card holder 15 holds the probe card 14 so that the probe card 14 is disposed at a prescribed position. Also, the card holder 15 supports the probe card 14 so that the probe card 14 does not warp due to the pressure during inspection.

[0021] The semiconductor wafer 1 to be inspected is supplied from the wafer carrier 19 to the prober 10. More specifically, the semiconductor wafer 1 stored in the wafer carrier 19 is fed into the housing 11 of the prober 10. Once fed into the housing 11, the semiconductor wafer 1 is held by the wafer chuck 17 and positioned below (directly below) the probe card 14 mounted in the card holder 15. In other words, the wafer chuck 17 holds the semiconductor wafer 1 to be inspected and positions it below (directly below) the probe card 14.

[0022] Furthermore, the wafer chuck 17 not only positions the semiconductor wafer 1 below (directly beneath) the probe card 14, but also has the function of changing or adjusting the relative position between the semiconductor wafer 1 and the probe card 14.

[0023] For example, the wafer chuck 17 brings the semiconductor wafer 1 close to the probe card 14 and brings it into contact with the probe card 14. In other words, the wafer chuck 17 brings the semiconductor wafer 1 into contact with the probe card 14. As a result, the semiconductor wafer 1 and the probe card 14 are electrically connected, making it possible to inspect the electrical characteristics of the semiconductor chip formed on the semiconductor wafer 1.

[0024] <Semiconductor wafers> Before describing the details of the prober 10, let's first describe the semiconductor wafer 1 that is to be inspected. Figure 2 is a plan view showing the main surface 2 of the semiconductor wafer 1 shown in Figure 1. As shown in Figure 2, the semiconductor wafer 1 has a roughly circular planar shape.

[0025] However, the periphery of the semiconductor wafer 1 is provided with notches (oriental flats) 3 to indicate the crystal orientation. Therefore, the planar shape of the semiconductor wafer 1 is not a perfect circle.

[0026] The main surface 2 of the semiconductor wafer 1 is divided into multiple chip formation regions, and a semiconductor chip 4 is formed in each chip formation region. Figure 3 is an enlarged view of the semiconductor chip 4 shown in Figure 2. Note that in Figure 2, each semiconductor chip 4 is shown enlarged for convenience. As a result, the main surface 2 of the semiconductor wafer 1 shown in Figure 2 shows fewer semiconductor chips 4 than the actual number.

[0027] In reality, the main surface 2 of a semiconductor wafer 1 has many more semiconductor chips 4 formed on it. For example, the main surface 2 of a semiconductor wafer 1 has 1,000 to 2,000 semiconductor chips 4 formed on it.

[0028] As shown in Figure 3, each semiconductor chip 4 has a rectangular or substantially rectangular planar shape and is equipped with multiple electrodes 5 that are electrically connected to semiconductor elements such as transistors and diodes. Each electrode 5 is made of aluminum and has a rectangular or substantially rectangular planar shape. The electrodes 5 are sometimes called “pads,” “chip electrodes,” or “electrode pads.” Therefore, in the following explanation, electrodes 5 may be referred to as “pads 5.”

[0029] In this embodiment, multiple pads 5 are arranged on the periphery of each semiconductor chip 4. More specifically, the multiple pads 5 are arranged in a row along each side of each semiconductor chip 4. However, the arrangement of the pads 5 can be changed as appropriate. For example, in another embodiment, multiple rows of pads 5 are provided along each side of the semiconductor chip 4. In yet another embodiment, pads 5 are arranged not only on the periphery of the semiconductor chip 4 but also in the center.

[0030] The planar shapes of the semiconductor chip 4 and pad 5 do not necessarily have to be rectangular or nearly rectangular. However, considering various process requirements, it is preferable that the planar shape of at least the pad 5 is rectangular.

[0031] <Probe Card> Figure 4 is a schematic diagram showing an enlarged view of a part of the prober 10 shown in Figure 1. More specifically, Figure 4 is a schematic diagram showing an enlarged view of the probe card 14, wafer chuck 17, and their surroundings. The probe card 14 is a wiring board having a lower surface 21 and an upper surface 22 located on the opposite side of the lower surface 21. The probe card 14 is also provided with a plurality of probe needles 30.

[0032] Although not shown in the diagram, the lower surface 21 of the probe card 14 is provided with multiple terminals electrically connected to the probe needle 30. On the other hand, the upper surface 22 of the probe card 14 is provided with multiple terminals electrically connected to the interface ring 13. Furthermore, the terminals on the lower surface 21 and the terminals on the upper surface 22 are electrically connected via wiring provided inside the probe card 14.

[0033] The probe card 14 is positioned above the wafer chuck 17. When the semiconductor wafer 1 is held by the wafer chuck 17, the probe card 14 faces the semiconductor wafer 1 held by the wafer chuck 17. More specifically, the lower surface 21 of the probe card 14 faces the main surface 2 of the semiconductor wafer 1 held by the wafer chuck 17.

[0034] From another perspective, the probe card 14 is positioned on the main surface 2 side of the semiconductor wafer 1, with its lower surface 21 facing the main surface 2 of the semiconductor wafer 1.

[0035] As previously described, during probe testing, the semiconductor wafer 1 and the probe card 14 are electrically connected. More specifically, the semiconductor wafer 1 is pushed up by the wafer chuck 17, and the pads 5 of the semiconductor chip 4 formed on the main surface 2 of the semiconductor wafer 1 are pressed against the tip 31 of the probe needle 30 provided on the probe card 14. As a result, the semiconductor wafer 1 and the probe card 14 are electrically connected. Alternatively, the semiconductor chip 4 and the test head 12 are electrically connected via the probe card 14.

[0036] Before pushing up the semiconductor wafer 1, the relative position between the semiconductor wafer 1 and the probe card 14 is confirmed and adjusted. More specifically, before pushing up the semiconductor wafer 1, the relative position between the pad 5 of the semiconductor chip 4 and the tip 31 of the probe needle 30 is confirmed and adjusted.

[0037] From another perspective, the first contact point is identified and adjusted. Specifically, the positions of the probe needle 30 and pad 5 that first make contact when the semiconductor wafer 1 is pushed up are identified and adjusted. In other words, the positions of the probe needle 30 and pad 5 that serve as the reference for the alignment of multiple other probe needles 30 and pad 5 are identified and adjusted.

[0038] As described above, the probe needles 30 provided on the probe card 14 are terminals (contact terminals) that make contact with the pads 5 of the semiconductor chip 4 and establish electrical conductivity with the pads 5. In addition, the electrical connection between the semiconductor chip 4 and the test head 12 is achieved not only through the probe needles 30 but also through the aforementioned terminals and wiring provided on the probe card 14.

[0039] <Support member> Each probe needle 30 is supported by a support member 40 located on the lower surface 21 side of the probe card 14. The support member 40 is fixed to the probe card 14 directly or indirectly. The support member 40 is fixed to the probe card 14, for example, by bolts or adhesive.

[0040] The support member 40 is a resin member having a lower surface 41 facing the main surface 2 of the semiconductor wafer 1 held by the wafer chuck 17, and an upper surface 42 located on the opposite side of the lower surface 41. More specifically, the support member 40 is a frame-shaped or substantially frame-shaped resin member formed from a heat-resistant and insulating resin material.

[0041] Each probe needle 30 is partially fixed to a support member 40. Furthermore, one longitudinal end (tip side) of the probe needle 30, including the tip 31, protrudes inward from the inner surface 43 of the support member 40. Additionally, the tip side of the probe needle 30 protruding from the inner surface 43 is bent downward. In other words, the tip side of the probe needle 30, including the tip 31, is bent so that the tip 31 faces the main surface 2 of the semiconductor wafer 1.

[0042] From another perspective, one longitudinal end (tip side) of the probe needle 30, including the tip 31, protrudes into a recess 44 provided in the center of the support member 40, and the tip 31 is bent so as to face the main surface 2 of the semiconductor wafer 1.

[0043] As described above, the probe needle 30 of this embodiment includes a bent portion. Therefore, the probe needle 30 of this embodiment is sometimes called a "cantilever type". However, the probe needle 30 is not limited to a cantilever type. For example, the probe needle of another embodiment does not include the bent portion described above. Such a straight probe needle is sometimes called a "vertical type" or "straight type".

[0044] The support structure for the probe needle 30 is not particularly limited. For example, the probe needle 30 may be partially molded by the support member 40. Alternatively, the probe needle 30 may be inserted into a through hole provided in the support member 40 and supported by the inner circumferential surface of the through hole.

[0045] <Temperature sensor> The probe 10 has a temperature sensor 50. The temperature sensor 50 is needle-shaped and is supported by a support member 40, similar to the probe needle 30. More specifically, the temperature sensor 50 is fixed to the support member 40 in the same or substantially the same manner as the probe needle 30.

[0046] Furthermore, one longitudinal end (tip side) of the temperature sensor 50, including the tip 51, protrudes from the inner surface 43 of the support member 40 toward the inside of the recess 44. In addition, the tip 51 of the temperature sensor 50 is positioned near the tip 31 of the probe needle 30. Therefore, the temperature sensor 50 can measure the temperature of the tip 31 of the probe needle 30 or the temperature near the tip 31.

[0047] The tip 51 of the temperature sensor 50, located near the tip 31 of the probe needle 30, is positioned between the opposing semiconductor wafer 1 and the probe card 14 during probe inspection. Therefore, the temperature sensor 50 can also measure the temperature between the opposing semiconductor wafer 1 and the probe card 14. More specifically, the temperature sensor 50 can also measure the temperature of the space (region) between the opposing semiconductor wafer 1 and the probe card 14.

[0048] Furthermore, during probe testing, the tip 31 of the probe needle 30 comes into contact with the pad 5 of the semiconductor chip 4. Therefore, the tip 51 of the temperature sensor 50, which is located near the tip 31 of the probe needle 30, is positioned near the contact point between the probe needle 30 and the pad 5 during probe testing. Consequently, the temperature sensor 50 is also capable of measuring the temperature at or near the contact point between the probe needle 30 and the pad 5.

[0049] Figure 5 is an explanatory diagram showing the positional relationship between the probe needle 30 and the temperature sensor 50. During probe inspection, the probe needle 30 is slightly pushed up by the semiconductor wafer 1. Therefore, in order to avoid contact between the temperature sensor 50 and the semiconductor wafer 1, the tip 51 of the temperature sensor 50 is closer to the probe card 14 than the tip 31 of the probe needle 30 in the direction opposite to the semiconductor wafer 1 and the probe card 14 (Z-axis direction / vertical direction). In other words, the tip 51 of the temperature sensor 50 is positioned higher than the tip 31 of the probe needle 30.

[0050] As a result, a height difference Δh exists between the tip 51 of the temperature sensor 50 and the tip 31 of the probe needle 30. In this embodiment, the height difference Δh is 0.26 mm. The height H of the probe needle 30 shown in Figure 5 is 12.0 mm. Alternatively, the distance from the bottom surface 21 of the probe card 14 to the tip 31 of the probe needle 30 is 12.0 mm.

[0051] Furthermore, the position of the probe needle 30 changes slightly during probe testing. Therefore, a clearance is necessary between the tip 51 of the temperature sensor 50 and the tip 31 of the probe needle 30 to avoid interference between them. On the other hand, from the viewpoint of more accurately measuring the temperature near the tip of the probe needle 30, it is desirable for the clearance to be as small as possible. Also, from the viewpoint of more accurately measuring the temperature near the contact point between the probe needle 30 and the pad 5, it is desirable for the clearance to be as small as possible. Therefore, the clearance is determined by considering the balance between interference avoidance and measurement accuracy.

[0052] Furthermore, the support structure for the temperature sensor 50 is not particularly limited, as long as the tip 51 of the temperature sensor 50 is positioned near the tip 31 of the probe needle 30. For example, the temperature sensor 50 may be partially molded by the support member 40. Alternatively, the temperature sensor 50 may be inserted into a through hole provided in the support member 40 and supported by the inner circumferential surface of the through hole. Moreover, the temperature sensor 50 may be supported or held by a member other than the support member 40.

[0053] <Heater> Refer to Figure 4 again. The probe 10 has a heater 60 that incorporates a temperature sensor (thermocouple). The heater 60 is provided on the probe card 14 and is located on the support member 40. More specifically, the heater 60 is located inside the opening 23 provided in the probe card 14. The heater 60 is also in contact with the upper surface 42 of the support member 40 inside the opening 23. More specifically, the heater 60 and the upper surface 42 of the support member 40 are in heat conduction-conductive contact.

[0054] Alternatively, the heater 60 is embedded in the probe card 14 while being thermally connected to the probe card 14 and the support member 40. Therefore, when the heater 60 is activated, the probe card 14 and the support member 40 are heated.

[0055] The heater 60 is controlled based on the measurement results of the temperature sensor 50. More specifically, the heater 60 is feedback controlled so that the temperature measured by the temperature sensor 50 matches the target temperature. Therefore, if the temperature measured by the temperature sensor 50 is lower than the target temperature, the heater 60 is controlled to increase its heat output. On the other hand, if the temperature measured by the temperature sensor 50 is higher than the target temperature, the heater 60 is controlled to decrease its heat output.

[0056] <Wafer Chuck> The wafer chuck 17 holds the semiconductor wafer 1 by adsorption. However, the wafer chuck 17 can not only hold the semiconductor wafer 1, but also move the held semiconductor wafer 1 in two or more different directions.

[0057] The wafer chuck 17 is movable in two or more different directions while holding the semiconductor wafer 1. More specifically, the wafer chuck 17 is movable in the X-axis direction (left-right), Y-axis direction (front-back), and Z-axis direction (up-down) as shown in Figure 4, either independently or in conjunction with the movement of the wafer stage 16.

[0058] When the wafer chuck 17 holding the semiconductor wafer 1 moves vertically, the vertical distance between the semiconductor wafer 1 and the probe card 14 changes. For example, when the wafer chuck 17 moves upward (upwards), the semiconductor wafer 1 is pushed up and moves closer to the probe card 14. On the other hand, when the wafer chuck 17 moves downward (downwards), the semiconductor wafer 1 is pulled down and moves away from the probe card 14.

[0059] Furthermore, when the wafer chuck 17 holding the semiconductor wafer 1 moves in the forward / backward or left / right direction, a different inspection area is moved to the inspection position. As previously described, numerous semiconductor chips 4 are formed on the main surface 2 of the semiconductor wafer 1. For this reason, it is difficult to inspect all of the semiconductor chips 4 simultaneously.

[0060] Therefore, the main surface 2 of the semiconductor wafer 1 may be divided into multiple inspection areas. In such cases, the desired inspection area can be moved to the inspection position by moving the wafer chuck 17 in the front-back or left-right direction.

[0061] In this embodiment, the wafer chuck 17 moves integrally with the wafer stage 16 in the X-axis direction (left-right direction) and the Y-axis direction (front-back direction), but moves independently in the Z-axis direction (up-down direction). However, in another embodiment, the wafer chuck 17 moves independently in all directions. In yet another embodiment, the wafer chuck 17 moves integrally with the wafer stage 16 in all directions.

[0062] <Heater> The prober 10 has a heater 70 that incorporates a temperature sensor (thermocouple). The heater 70 is a separate heat source from the heater 60 and is provided in the wafer chuck 17. More specifically, the heater 70 is built into the wafer chuck 17. Therefore, when the heater 70 is activated, the wafer chuck 17 is heated, and the semiconductor wafer 1 held in the wafer chuck 17 is also heated.

[0063] <Temperature control> As described above, the prober 10 of this embodiment includes a heater 60 provided on the probe card 14 and capable of heating the probe card 14, and a heater 70 provided on the wafer chuck 17 and capable of heating the semiconductor wafer 1.

[0064] Figure 6 is a schematic diagram illustrating the heating process by heaters 60 and 70. When heater 70, located on the wafer chuck 17, is activated, the heat emitted from heater 70 heats the semiconductor wafer 1. On the other hand, when heater 60, located on the probe card 14, is activated, the heat emitted from heater 60 heats the probe card 14, which is located above the semiconductor wafer 1.

[0065] As a result, the temperature difference ΔT between the opposing semiconductor wafer 1 and probe card 14 is reduced, and heat transfer from the semiconductor wafer 1 to the probe card 14 is suppressed. Alternatively, the temperature drop of the semiconductor wafer 1 and its vicinity due to heat absorption by the probe card 14 is suppressed.

[0066] In addition, the prober 10 of this embodiment has a temperature sensor 50 capable of measuring the temperature between the semiconductor wafer 1 and the probe card 14, and the heater 60 is feedback controlled based on the measurement result of this temperature sensor 50. The temperature sensor 50 is a third temperature sensor separate from the temperature sensors provided by the heaters 60 and 70, and is a temperature sensor capable of directly measuring the temperature between the semiconductor wafer 1 and the probe card 14.

[0067] From another perspective, the prober 10 of this embodiment has a temperature sensor 50 that can directly measure the temperature of the contact point or near the contact point between the probe needle 30 and the pad 5, and the heater 60 is feedback controlled based on the measurement result of this temperature sensor 50.

[0068] Therefore, in the prober 10 of this embodiment, the temperature between the semiconductor wafer 1 and the probe card 14, and the temperature at or near the contact point between the probe needle 30 and the pad 5 are adjusted and maintained to match the set target temperature.

[0069] Therefore, by setting the desired test temperature as the target temperature for feedback control, probe testing is performed while the temperature between the semiconductor wafer 1 and the probe card 14 is maintained at the test temperature. In other words, probe testing is performed while the temperature at or near the contact point between the probe needle 30 and the pad 5 is maintained at the test temperature.

[0070] Furthermore, considering measurement errors and other factors, it is preferable to set the target temperature higher than the desired test temperature. For example, if the desired test temperature is 126 degrees Celsius, it is preferable to set the target temperature to around 130 degrees Celsius.

[0071] <Overview of Semiconductor Device Manufacturing Method> Figure 7 is a process diagram showing an overview of the semiconductor device manufacturing method according to this embodiment. The semiconductor device manufacturing method according to this embodiment includes at least a wafer preparation step S1, an inspection step S2, and a framing step S3.

[0072] The details of each process will be described later, but the wafer preparation process S1 is the process of preparing the semiconductor wafer 1. The inspection process S2 is the process of inspecting the semiconductor wafer 1 using the probe 10. The fragmentation process S3 is the process of cutting the semiconductor wafer 1 to obtain multiple semiconductor chips 4.

[0073] <Wafer preparation process> The structure of the semiconductor wafer 1 prepared in wafer preparation step S1, as shown in Figure 7, has already been explained with reference to Figures 2, 3, etc.

[0074] A semiconductor wafer 1 having the structure described above can be manufactured, for example, as follows: First, a semiconductor substrate is prepared (substrate preparation step). Next, multiple semiconductor elements such as transistors and diodes are formed on the semiconductor substrate (semiconductor element formation step). After that, a wiring layer is formed on the semiconductor elements (wiring layer formation step).

[0075] In the wiring layer formation process of this embodiment, after stacking multiple wiring layers, multiple pads 5 are formed on the uppermost wiring layer. Each pad 5 is electrically connected to a semiconductor element via the wiring provided in the wiring layer.

[0076] Next, a protective film is formed to cover the wiring layer and the pad 5 (protective film formation step). In the protective film formation step of this embodiment, after the protective film is formed, an opening is formed in the protective film to expose the pad 5. The protective film is sometimes called a "passivation film" or "insulating film". The protective film is, for example, a silicon nitride film, a silicon film, or a laminated film of a silicon nitride film and a silicon film.

[0077] The semiconductor wafer 1 shown in Figure 2 is manufactured through the process described above. In other words, a semiconductor wafer 1 having a main surface 2 on which multiple semiconductor chips 4 are formed is prepared. From another perspective, the wafer preparation process S1 shown in Figure 7 includes at least a substrate preparation process, a semiconductor device formation process, a wiring layer formation process, and a protective film formation process.

[0078] <Singulation process> In the fragmentation process S3 shown in Figure 7, the semiconductor wafer 1, which has undergone the inspection process S2 described later, is divided (cut) into chip formation regions, and multiple semiconductor chips 4 are obtained. More specifically, the semiconductor wafer 1 is cut along the scribe regions provided between adjacent chip formation regions. Only semiconductor wafers 1 that have been determined to be good products in the inspection process S2 are sent to the fragmentation process S3.

[0079] <Inspection Process> The structure and function of the prober 10 used in the inspection process S2 shown in Figure 7 have already been explained with reference to Figures 1, 4 to 6, etc. Figure 8 is a process diagram showing the details of the inspection process S2 shown in Figure 7. The purpose of the inspection process S2 shown in Figure 7 is to inspect the electrical characteristics of the semiconductor chip 4 in a high-temperature environment. Therefore, in this embodiment, the test temperature is set to 126 degrees Celsius.

[0080] In the inspection process S2 of this embodiment, first, step S21 shown in Figure 8 is performed. In step S21, the heater 70 provided in the wafer chuck 17 is turned ON, and the wafer chuck 17 is heated to the test temperature (126 degrees Celsius). In this embodiment, the temperature measured by the temperature sensor built into the heater 70 is considered to be the temperature of the wafer chuck 17.

[0081] Next, step S22 is performed. In step S22, the semiconductor wafer 1 is supplied to the prober 10 and held by the wafer chuck 17. The semiconductor wafer 1 held by the wafer chuck 17 is positioned below (directly below) the probe card 14 and faces the probe card 14. The semiconductor wafer 1 held by the wafer chuck 17 is also heated through the wafer chuck 17. The semiconductor wafer 1 is heated to the same or approximately the same temperature as the wafer chuck 17.

[0082] Next, steps S23 and S24 are executed simultaneously. In step S23, the heater 60 provided on the probe card 14 is turned ON. In step S24, the semiconductor wafer 1 is brought closer to the probe card 14 by the wafer chuck 17.

[0083] When step S23 is performed, the probe card 14 is heated by the heat emitted from the heater 60. When step S24 is performed, the probe card 14 is heated by the heat radiated from the semiconductor wafer 1.

[0084] In other words, when step S24 is performed, heat is transferred from the semiconductor wafer 1 to the probe card 14. Therefore, if the temperature difference ΔT between the semiconductor wafer 1 and the probe card 14 is large, a lot of heat will be transferred from the semiconductor wafer 1 to the probe card 14, and there is a risk that the temperature of the semiconductor wafer 1 and its vicinity will fall below the test temperature.

[0085] However, in this embodiment, the probe card 14 is heated by a heater 60 provided on the probe card 14. Therefore, the temperature difference ΔT is smaller compared to when the probe card 14 is not heated. As a result, heat transfer from the semiconductor wafer 1 to the probe card 14 is suppressed. Alternatively, the temperature drop of the semiconductor wafer 1 and its vicinity due to heat absorption by the probe card 14 is suppressed.

[0086] The temperature of the heater 60 stabilizes relatively quickly. Specifically, the temperature of the heater 60 stabilizes in 1 to 2 minutes. Therefore, the semiconductor wafer 1 may be brought closer to the probe card 14 after the temperature of the heater 60 has stabilized. In other words, step S24 may be executed after step S23 has been completed. To put it another way, steps S23 and S24 may be executed sequentially.

[0087] However, in this embodiment, where steps S23 and S24 are executed simultaneously, the time required to execute these two steps is reduced compared to other embodiments where steps S23 and S24 are executed sequentially.

[0088] Furthermore, the time required to execute steps S23 and S24 can also be shortened by starting step S24 immediately after starting step S23. For example, if the movement of the semiconductor wafer 1 is started immediately after turning on the heater 60, the time required to execute steps S23 and S24 will be shortened compared to the case where the movement of the semiconductor wafer 1 is started after the temperature of the heater 60 has stabilized.

[0089] Once steps S23 and S24 are completed, the process proceeds to step S25. In step S25, the first contact point is confirmed and adjusted. For example, the positions of the probe needle 30 and pad 5 that will first make contact in step S29 (described later) are confirmed by the optical system. Then, based on the confirmation results by the optical system, the semiconductor wafer 1 is moved horizontally (left-right direction, front-back direction). In this embodiment, the semiconductor wafer 1 is moved in the same direction as the wafer stage 16 moves horizontally.

[0090] Here, as shown in Figure 6, the size (dimensions) of the semiconductor wafer 1 and heater 70 are larger than the size (dimensions) of the heater 60 and support member 40. Therefore, when step S24 is performed, not only the heat radiated from the semiconductor wafer 1 but also the heat emitted from the heater 70 is transferred to the probe card 14. As a result, if the interval between the end of step S24 and the start of step S29, which will be described later, is short, there is a risk that the probe card 14 will change (for example, expand) while the various inspections described later are being performed. Therefore, if it is desired to suppress or prevent the change in the probe card 14 after step S24, it is preferable to lengthen the time interval between step S24 and step S25 (especially the confirmation of the position of the probe needle 30).

[0091] However, in this embodiment, as described above, the probe card 14 is preheated by the heater 60 before step S25 is executed, so the temperature difference ΔT between the semiconductor wafer 1 and the probe card 14 is small. Therefore, the time interval between step S24 and step S25 can be shortened, and consequently the time required for probe testing can be shortened.

[0092] Once step S25 is completed, the process moves to step S26. In step S26, temperature measurement is performed by the temperature sensor 50. More specifically, the temperature between the opposing semiconductor wafer 1 and probe card 14 is measured by the temperature sensor 50.

[0093] Next, step S27 is performed. In step S27, the temperature measured in step S26 (measured temperature) is compared with a preset target temperature. In this embodiment, the target temperature is set to 129 degrees Celsius (test temperature + 3 degrees).

[0094] If it is determined in step S27 that the measured temperature is below the target temperature, the process proceeds to step S28. In step S28, the heater 60 is controlled to increase the amount of heat generated. Steps S26, S27, and S28 are then repeated until the measured temperature exceeds the target temperature.

[0095] On the other hand, if it is determined in step S27 that the measured temperature is above the target temperature, the process proceeds to step S29. In step S29, the semiconductor wafer 1 is brought closer to the probe card 14, and the pad 5 of the semiconductor chip 4 is pressed against the tip 31 of the probe needle 30. In other words, when step S27 is performed, the probe needle 30 makes contact with the pad 5. After that, various tests on the electrical characteristics of the semiconductor chip 4 are started.

[0096] Once all inspections are complete, the process proceeds to step S30, ending the inspection. In step S30, the semiconductor wafer 1 is moved away from the probe card 14. In other words, when step S30 is performed, the probe needle 30 is released from contact with the pad 5. Subsequently, step S31 is performed, and the heater 60 is turned OFF.

[0097] As described above, in the inspection step S2 of this embodiment, the inspection is started after it is confirmed that the temperature between the opposing semiconductor wafer 1 and the probe card 14 is above the test temperature. In other words, in the inspection step S2 of this embodiment, the inspection is started after it is confirmed that the temperature of the semiconductor wafer 1 and its vicinity is above the test temperature. As a result, the inspection is performed in an environment where the temperature of the semiconductor wafer 1 and its vicinity is maintained above the test temperature.

[0098] Furthermore, the heater 60 operates throughout the inspection. In other words, the probe card 14 continues to be heated during the inspection. Therefore, the temperature difference ΔT between the semiconductor wafer 1 and the probe card 14 does not fluctuate significantly during the inspection. Alternatively, it is highly unlikely that the temperature of the semiconductor wafer 1 and its vicinity will decrease during the inspection to a degree that would affect the reliability of the inspection.

[0099] However, there is a non-zero possibility that the temperature difference ΔT may increase for some reason, causing the temperature of the semiconductor wafer 1 and its vicinity to fall below the test temperature. Therefore, from the viewpoint of more reliably avoiding an increase in the temperature difference ΔT (a decrease in the temperature of the semiconductor wafer 1 and its vicinity), it is preferable to continue temperature measurement by the temperature sensor 50 and control of the heater 60 based on the measurement results even after the start of the inspection.

[0100] As previously described, the main surface 2 of the semiconductor wafer 1 may be divided into multiple inspection areas. In such cases, after the inspection of one inspection area is completed, the inspection of the other inspection areas is carried out immediately afterward.

[0101] For example, if the main surface 2 of the semiconductor wafer 1 is divided into four inspection areas, after the inspection of one inspection area is completed, steps S29 and S30 are repeated multiple times to perform inspections on the remaining three inspection areas.

[0102] Alternatively, after the inspection of one inspection area is completed, the steps from step S26 onward are repeated multiple times to perform inspections on the remaining three inspection areas. In this case, temperature measurement and temperature adjustment (steps S26, S27, S28) are performed for each inspection area. Therefore, inspections of all inspection areas can be more reliably performed in an environment above the test temperature.

[0103] Refer to Figure 7 again. As previously described, the semiconductor wafer 1 that was determined to be a good product in the inspection process S2 is sent to the fragmentation process S3. In the fragmentation process S3, the semiconductor wafer 1 is cut (separated) and multiple semiconductor chips 4 are obtained.

[0104] Subsequently, the semiconductor chip 4 is packaged, and the semiconductor device is completed. For example, the semiconductor chip 4 is mounted on a multilayer wiring board (die bonding process). Next, the pads 5 of the semiconductor chip 4 and the terminals (leads) of the multilayer wiring board are electrically connected via bonding wires (wire bonding process). After that, the semiconductor chip 4 and the like are molded with a sealing resin such as epoxy resin (sealing process). Next, external connection terminals such as bumps are provided on the multilayer wiring board (bump formation process). However, these processes are merely examples of processes that may be performed after the individualization process S3.

[0105] Although the present invention has been specifically described above based on embodiments, it goes without saying that the present invention is not limited to the above embodiments and can be modified in various ways without departing from its essence. [Explanation of Symbols]

[0106] 1. Semiconductor wafer 2 Main surface 3 Notch 4 Semiconductor chips 5 electrodes (pads) 10. Inspection device (prover) 11 cabinets 12 Test heads (testers) 13 Interface Ring 14 Probe Cards 15 Card Holders 16 Wafer Stage 17 Wafer Chuck 18 Tester unit 19 Wafer Carrier 21 Bottom side 22 Top side 23 Opening 30 probe needles 31 Tip 40 Support member 41 Bottom surface 42 Top surface 43 Inner surface 44 recess 50 Temperature Sensors 51 Tip 60, 70 heaters S1 Wafer preparation process S2 inspection process S3 Singulation process Δh Height difference ΔT temperature difference

Claims

1. Wafer chuck and, A semiconductor wafer held in the wafer chuck and a probe card facing it, A support member fixed to the probe card, A probe needle, supported by the support member, is in contact with the electrodes of a semiconductor chip formed on the semiconductor wafer. The first heater provided in the wafer chuck, The probe card has a second heater provided on it, Inspection device.

2. In the inspection apparatus according to claim 1, It has a temperature sensor capable of measuring the temperature between the opposing semiconductor wafer and the probe card, The second heater is controlled based on the measurement results of the temperature sensor. Inspection device.

3. In the inspection apparatus according to claim 1, The second heater is in contact with the support member. Inspection device.

4. In the inspection apparatus described in claim 3, The support member comprises a lower surface facing the semiconductor wafer and an upper surface located on the opposite side of the lower surface. The second heater is in contact with the upper surface of the support member. Inspection device.

5. In the inspection apparatus according to claim 4, The second heater is positioned inside the opening provided in the probe card and is in contact with the upper surface of the support member inside the opening. Inspection device.

6. In the inspection apparatus according to claim 2, The temperature sensor is supported by the support member, The tip of the temperature sensor is positioned near the tip of the probe needle. Inspection device.

7. In the inspection apparatus according to claim 6, The tip of the temperature sensor is closer to the probe card than the tip of the probe needle in the direction facing the semiconductor wafer and the probe card. Inspection device.

8. (a) A step of preparing a semiconductor wafer having a main surface on which a semiconductor chip is formed and a back surface located opposite to the main surface, (b) A step of bringing a probe needle into contact with the electrodes of the semiconductor chip to inspect the electrical characteristics of the semiconductor chip, (c) The step of cutting the semiconductor wafer to obtain the semiconductor chip, The above step (b) includes: (b1) A step of heating the semiconductor wafer with a first heater provided in a wafer chuck located on the back side of the semiconductor wafer and holding the semiconductor wafer, (b) The process includes heating a probe card, which is arranged on the main surface side of the semiconductor wafer and on which the probe needles are provided, by a second heater provided on the probe card, A method for manufacturing a semiconductor device.

9. In the method for manufacturing a semiconductor device according to claim 8, The above step (b) includes: (b3) After the steps of (b1) and (b2), a step of measuring the temperature between the opposing semiconductor wafer and the probe card, (b4) A step of controlling the second heater based on the measurement results in step (b3) to adjust the temperature between the opposing semiconductor wafer and the probe card, (b5) The step of bringing the probe needle into contact with the electrode after the step in (b4) is included, A method for manufacturing a semiconductor device.

10. In the method for manufacturing a semiconductor device according to claim 8, The above step (b) includes: (b3) After step (b1), the step includes bringing the semiconductor wafer held in the wafer chuck closer to the probe card and heating the probe card, The steps (b2) and (b3) are performed simultaneously after the step (b1). A method for manufacturing a semiconductor device.

11. In the method for manufacturing a semiconductor device according to claim 8, The above step (b) includes: (b3) After step (b1), the step includes bringing the semiconductor wafer held in the wafer chuck closer to the probe card and heating the probe card, The (b2) step is performed after the (b1) step and before the (b3) step. A method for manufacturing a semiconductor device.

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