Layered semiconductor device having a patterned coating containing a host and a dopant

Abstract

To provide a layered semiconductor device having a patterned coating including a host and a dopant. [Solution] A layered semiconductor device including a patterned film deposited on the exposed layer surface of a substrate in a first lateral portion is adapted to influence the vapor flux tendency of the deposited material condensed thereon, and the patterned film comprises a first material and a second material, each exhibiting at least one first material property and at least one second material property. The patterned film exhibits at least one third material property that differs from at least one of the first and second material properties with respect to at least one of their combinations and values. The third at least one material property distinguishes the exposed layer surface of the substrate from the exposed layer surface of the patterned film.

Description

[Technical Field]

[0001] (Cross-reference of related applications) This application claims priority to U.S. Provisional Patent Application No. 63 / 146,970 filed on 8 February 2021, U.S. Provisional Patent Application No. 63 / 158,185 filed on 8 March 2021, and U.S. Provisional Patent Application No. 63 / 289,599 filed on 14 December 2021, the contents of each of these applications being incorporated herein by reference in their entirety.

[0002] (Field of Invention) This disclosure relates to layered semiconductor devices, and more particularly to patterning films which may act as and / or be nucleation-inhibiting coatings (NICs) for patterning at least one conductive deposition material that can be deposited during a device manufacturing process, and more specifically to patterning films which may act as and / or be such NICs in a manufacturing process for optoelectronic devices patterned using the patterning films. [Background technology]

[0003] In optoelectronic devices such as organic light-emitting diodes (OLEDs), at least one semiconductor layer is disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode are electrically coupled to a power source and each generates holes and electrons moving toward each other through at least one semiconductor layer. When a pair of holes and electrons combine, a photon can be emitted.

[0004] An OLED display panel may contain multiple (sub)pixels, each (sub)pixel having an associated pair of electrodes and at least one semiconductor layer between them. In some non-limiting examples, the (sub)pixels may be selectively driven by a driving circuit comprising multiple thin-film transistor (TFT) structures electrically coupled by conductive metal wires, in some non-limiting examples, within the substrate on which the electrodes and at least one semiconductor layer are deposited. The various layers and coatings of such a panel are typically formed by vacuum-based deposition techniques.

[0005] Such display panels may be used in electronic devices such as mobile phones, as an example of a non-limiting designation.

[0006] In some applications, the objective may be to selectively deposit a conductive deposition material during the OLED manufacturing process to form device features, such as, non-limitedly, electrically coupled electrodes and / or conductive elements, thereby providing a conductive deposition layer in a pattern over either or both of the lateral and cross-sectional surfaces of each (sub)pixel of the panel.

[0007] One approach to this involves interposing a fine metal mask (FMM) during the deposition of electrode materials and / or conductive elements electrically coupled thereto, in some non-limiting applications. However, the materials used as electrodes typically have relatively high evaporation temperatures, which affects the ability of the FMM to be reused and / or the accuracy of the patterns that can be achieved, and consequently increases cost, labor, and complexity.

[0008] One method for this, in some non-limiting examples, involves depositing electrode material and then removing the unwanted areas (including by laser drilling) to form a pattern. However, the removal process often results in the creation and / or presence of debris, which can affect the yield of the manufacturing process.

[0009] Furthermore, such methods may have reduced their applicability in certain applications and / or to certain devices that have certain topographical features.

[0010] In some non-limiting applications, the objective may be to provide a mechanism for depositing thin dispersed layers of metallic NPs within optoelectronic devices, which can affect the performance of the device in terms of optical properties, performance, stability, reliability, and / or lifetime.

[0011] Such methods and mechanisms may be achieved by selective deposition of a patterning film, which includes a patterning material that provides on its exposed surface a specific combination of material properties that can influence the ability of a conductive deposition material deposited thereon, either as a closure film or as a discontinuous layer of at least one particle structure.

[0012] Each combination of material properties can include a variety of material properties.

[0013] Such material properties have complex interrelationships, and a given combination may not be achievable with a single patterned material.

[0014] To adjust the properties of a coating, for example, to change its performance as a light-emitting layer and / or charge transport layer, it is known to use a combination of multiple materials in the coating.

[0015] As a non-limiting example, a radiation layer in an OLED device composed of multiple materials, including but not limited to, an organic fluorescent dye (C545T) doped into an organic host material (Alq3), a phosphorescent metal-organic complex (Ir(pph)3) doped into an organic host material (CBP), an organic thermally activated delayed fluorescence (TADF) material doped into an organic host material, or a hyperfluorescence emitter doped into an organic host material, can exhibit considerable performance in terms of light emission.

[0016] As a non-limiting example, transport layers in OLED devices composed of multiple materials, including but not limited to hole transport layers (HTL) and electron transport layers (ETL), can exhibit sufficient conductivity. These transport layers include but are not limited to hole transport layers (HTL) and electron transport layers (ETL). This includes organic pn-type dopants or n-type dopants (F4-TCNQ, LiQ) doped into organic host materials (MeO-TBD, Alq3, respectively), or inorganic p-type dopants or n-type dopants (Li, MoO3) in organic host materials (Alq3, NPB, respectively).

[0017] As a non-limiting example, an organic material (C) mixed with an inorganic material or an inorganic element (NPB). 60 A transport layer in an OLED device, including but not limited to HTL or ETL, composed of multiple materials including, but not limited to, two organic materials mixed together, can exhibit sufficient thermal stability.

[0018] As a non-limiting example, a transport layer in an OLED device, including but not limited to an HTL or ETL or an emissive host layer, composed of multiple materials including but not limited to hole-transporting organic materials and electron-transporting organic materials, can achieve sufficient charge equilibrium.

[0019] As a non-limiting example, a hole injection layer (HIL) or an electron injection layer (EIL) in an OLED device composed of multiple materials, including but not limited to two inorganic materials (LiF, Yb) or an inorganic material (LiF) mixed with an organic material (Alq3), can exhibit sufficient device performance.

[0020] As a non-limiting example, diarylethene (DAE) molecules mixed with polymers may be used to selectively pattern Mg while reducing the amount of DAE molecules used.

[0021] It is considered beneficial to provide a patterned coating that includes, but is not limited to, a given combination of various material properties, and comprises multiple materials selected to adjust the properties of the coating. [Brief explanation of the drawing]

[0022] Herein, examples of the present disclosure will be illustrated with reference to the following figures, where the same reference numeral in different figures indicates the same, and / or, in some non-limiting examples, similar, and / or corresponding elements. [Figure 1] This is a simplified block diagram from a cross-section of an exemplary device having multiple layers on the lateral side, formed by the deposition of an orientation layer, selective deposition of a patterning film on a first portion of the lateral side, and subsequently deposition of a closure film of the deposited material on a second portion thereof, according to an example of the present disclosure. [Figure 2] This is a plot of photoluminescence intensity as a function of wavelength for various experimental examples. [Figure 3] This is a plot of the transmittance reduction rate as a function of wavelength for various experimental examples. [Figure 4] This is a schematic diagram illustrating an exemplary process for depositing a patterned patterned coating on the exposed layer surface of the underlying layer in an exemplary version of the device shown in Figure 1, according to an example of the present disclosure. [Figure 5] This schematic diagram illustrates an exemplary process of depositing a deposition material 531 on a second portion of the exposed layer surface, including the deposition pattern of the patterned coating shown in Figure 1, where the patterned coating is a nucleation-inhibiting coating (NIC). [Figure 6A] Figure 1 is a schematic diagram illustrating an exemplary version of the device in a cross-sectional view. [Figure 6B] This is a schematic diagram illustrating the device shown in Figure 6A with a supplementary plan view. [Figure 6C] Figure 1 is a schematic diagram illustrating an exemplary version of the device in a cross-sectional view. [Figure 6D] This is a schematic diagram illustrating the device in Figure 6C with a supplementary plan view. [Figure 6E] Figure 1 is a schematic diagram illustrating an example of the device in a cross-sectional view. [Figure 6F] Figure 1 is a schematic diagram illustrating an example of the device in a cross-sectional view. [Figure 6G] Figure 1 is a schematic diagram illustrating an example of the device in a cross-sectional view. [Figure 7A] This schematic diagram illustrates various possible behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 1, based on various examples of the present disclosure. [Figure 7B] This schematic diagram illustrates various possible behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 1, based on various examples of the present disclosure. [Figure 7C] This schematic diagram illustrates various possible behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 1, based on various examples of the present disclosure. [Figure 7D] This schematic diagram illustrates various possible behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 1, based on various examples of the present disclosure. [Figure 7E] This schematic diagram illustrates various possible behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 1, based on various examples of the present disclosure. [Figure 7F]This schematic diagram illustrates various possible behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 1, based on various examples of the present disclosure. [Figure 7G] This schematic diagram illustrates various possible behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 1, based on various examples of the present disclosure. [Figure 7H] This schematic diagram illustrates various possible behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 1, based on various examples of the present disclosure. [Figure 7I] This schematic diagram illustrates various possible behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 1, based on various examples of the present disclosure. [Figure 8A] Each example presents multiple SEM images of an exemplary sample from this disclosure, along with plots of the distribution of several particles of various characteristic sizes within it. [Figure 8B] Each example presents multiple SEM images of an exemplary sample from this disclosure, along with plots of the distribution of several particles of various characteristic sizes within it. [Figure 8C] Each example presents multiple SEM images of an exemplary sample from this disclosure, along with plots of the distribution of several particles of various characteristic sizes within it. [Figure 8D] Each example presents multiple SEM images of an exemplary sample from this disclosure, along with plots of the distribution of several particles of various characteristic sizes within it. [Figure 8E] Each example presents multiple SEM images of an exemplary sample from this disclosure, along with plots of the distribution of several particles of various characteristic sizes within it. [Figure 9A] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 9B]Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 9C] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 9D] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 9E] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 9F] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 9G] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 9H] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 10] This is an exemplary schematic diagram illustrating, in a partially cut plan view, the device of Figure 1, which includes a particle structure patterning coating beneath at least one particle structure and an upper layer deposited thereon, according to an example of the present disclosure. [Figure 11A] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11B] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11C] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11D] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11E] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11F] These histograms plot the histogram distribution of particle structure as a characteristic function of particle size, based on the analysis of the microscopic images in Figures 11A to 11E. [Figure 11G] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11H] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11I] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11J] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11K] Figures 11G to 11J are histograms plotting the histogram distribution of particle structure as a characteristic function of particle size, based on the analysis of the microscopic images. [Figure 11L] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11M] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11N] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11O] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 11P] This histogram plots the histogram distribution of particle structure as a characteristic function of particle size, based on the analysis of the microscopic images in Figures 11L to 11O. [Figure 12A] This is a schematic diagram showing at least one particle structure in Figure 1 adjacent to the radiation region of the device in Figure 1, formed by the deposition of a patterning film following the deposition of multiple seeds for forming a structure, according to an example of the present disclosure. [Figure 12B]This is a schematic diagram showing at least one version of the particle structure in Figure 12A, formed by depositing a patterning coating before depositing multiple seeds, according to an example of the present disclosure. [Figure 13A] This is a simplified block diagram from a cross-sectional view of various examples of exemplary user devices according to an example of the present disclosure, each having a display panel for covering a main body and at least one under-display component housed therein for exchanging EM signals through the display panel layer at a non-zero angle. [Figure 13B] This is a simplified block diagram from a cross-sectional view of various examples of exemplary user devices according to an example of the present disclosure, each having a display panel for covering a main body and at least one under-display component housed therein for exchanging EM signals through the display panel layer at a non-zero angle. [Figure 13C] This is a simplified block diagram from a cross-sectional view of various examples of exemplary user devices according to an example of the present disclosure, each having a display panel for covering a main body and at least one under-display component housed therein for exchanging EM signals through the display panel layer at a non-zero angle. [Figure 14A] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 14B] This is an SEM micrograph of a sample prepared according to the example of this disclosure. [Figure 14C] This chart shows the average diameter based on the analysis of the microscopic images in Figures 14A and 14B. [Figure 15] This is a simplified block diagram from a cross-section of an exemplary optoelectronic device according to an example of the present disclosure. [Figure 16] This is a block diagram from a cross-section of an exemplary electroluminescent device, as an example of the present disclosure. [Figure 17] Figure 16 is a cross-sectional view of the device. [Figure 18]This schematic diagram illustrates, in plan view, an exemplary patterned electrode suitable for use in the device version of Figure 16, according to an example of this disclosure. [Figure 19] This is a schematic diagram illustrating an exemplary cross-sectional view of the device in Figure 18 along line 19-19. [Figure 20A] This schematic diagram illustrates, in plan view, several exemplary electrode patterns suitable for use in an exemplary version of the device shown in Figure 16, according to an example of this disclosure. [Figure 20B] This is a schematic diagram illustrating an exemplary cross-sectional view of the device in Figure 20A at an intermediate stage along line 20B-20B. [Figure 20C] This is a schematic diagram illustrating an exemplary cross-sectional view of the device in Figure 20A along line 20C-20C. [Figure 21] This schematic diagram illustrates a cross-sectional view of an exemplary version of the device of Figure 16, which has an exemplary patterned auxiliary electrode, according to an example of the present disclosure. [Figure 22] This schematic diagram illustrates, in plan view, an exemplary pattern of auxiliary electrodes overlapping at least one radiating region and at least one non-radiating region, according to an example of the present disclosure. [Figure 23A] This schematic diagram illustrates, in plan view, an exemplary pattern of an exemplary version of the device of Figure 16 having multiple groups of diamond-constituted radiating regions, according to an example of the present disclosure. [Figure 23B] This is a schematic diagram illustrating an exemplary cross-sectional view of the device in Figure 23A along line 23B-23B. [Figure 23C] This is a schematic diagram illustrating an exemplary cross-sectional view of the device in Figure 23A, taken along line 23C-23C. [Figure 24] This schematic diagram illustrates an exemplary cross-sectional view of an exemplary version of the device of Figure 17 having an additional exemplary deposition step, as described in this disclosure. [Figure 25] This schematic diagram illustrates an exemplary cross-sectional view of an exemplary version of the device of Figure 17 having an additional exemplary deposition step, as described in this disclosure. [Figure 26]This schematic diagram illustrates an exemplary cross-sectional view of an exemplary version of the device of Figure 17 having an additional exemplary deposition step, as described in this disclosure. [Figure 27] This schematic diagram illustrates an exemplary cross-sectional view of an exemplary version of the device of Figure 17 having an additional exemplary deposition step, as described in this disclosure. [Figure 28A] This schematic diagram illustrates in plan view an example of a transparent version of the device of Figure 16, which includes at least one exemplary pixel region and at least one exemplary light-transmitting region, having at least one auxiliary electrode, according to an example of the present disclosure. [Figure 28B] This is a schematic diagram illustrating an exemplary cross-sectional view of the device in Figure 28A along line 28B-28B. [Figure 29A] This schematic diagram illustrates, in plan view, an example of a transparent version of the device of Figure 16, which includes at least one exemplary pixel region and at least one exemplary light-transmitting region, according to an example of the present disclosure. [Figure 29B] This is a schematic diagram illustrating an exemplary cross-sectional view of the device in Figure 29A along line 29-29. [Figure 29C] This is a schematic diagram illustrating an exemplary cross-sectional view of the device in Figure 29A along line 29-29. [Figure 30] This is a schematic diagram that may illustrate an exemplary step of an exemplary process for manufacturing an exemplary version of the device of Figure 17 having a subpixel region having a second electrode of different thicknesses, according to an example of the present disclosure. [Figure 31] This schematic diagram illustrates an exemplary cross-sectional view of an exemplary version of the device of Figure 16, in which a second electrode is coupled to an auxiliary electrode, according to an example of the present disclosure. [Figure 32] This schematic diagram illustrates an exemplary cross-sectional view of an exemplary version of the device of Figure 16, which has shielding regions such as partitions and recesses in the non-radiative region, according to an example of the present disclosure. [Figure 33A] This schematic diagram shows an exemplary cross-sectional view of an exemplary version of the device of Figure 16, which has shielding regions such as partitions and openings in the non-radiative region, according to various examples of the present disclosure. [Figure 33B] This schematic diagram shows an exemplary cross-sectional view of an exemplary version of the device of Figure 16, which has shielding regions such as partitions and openings in the non-radiative region, according to various examples of the present disclosure. [Figure 34] This schematic diagram illustrates an exemplary cross-sectional view of an exemplary user device having a display panel with multiple layers, each containing at least one opening internally, according to an example of the present disclosure. [Figure 35A] Figure 34 is a schematic diagram illustrating the use of a user device according to an example of the present disclosure, in which at least one aperture is embodied by at least one signal-transmitting region and exchanges EM radiation of the IR and / or NIR spectrum for the purpose of biometric authentication of a user. [Figure 35B] This is a plan view of a user device including a display panel, as shown in Figure 34, which is an example of the present disclosure. [Figure 35C] Figure 35B is a cross-sectional view of the device shown along line 35C-35C. [Figure 35D] This is a plan view of a user device including a display panel, as shown in Figure 34, which is an example of the present disclosure. [Figure 35E] Figure 35D is a cross-sectional view of the device shown along line 35E-35E. [Figure 35F] This is a plan view of a user device including a display panel, as shown in Figure 34, which is an example of the present disclosure. [Figure 35G] Figure 35F is a cross-sectional view of the device shown along line 35G-35G. [Figure 35H] This is an enlarged plan view of a portion of a panel, as an example of this disclosure. [Figure 36] This schematic diagram shows exemplary steps of an exemplary process for depositing a deposit layer in a certain pattern on the exposed layer surface of an exemplary version of the device in Figure 16, by selective deposition and subsequent removal processes according to an example of the present disclosure. [Figure 37] This is an exemplary energy profile illustrating the relative energy state of adsorbed atoms absorbed onto a surface, as shown in one example of this disclosure. [Figure 38]This is a schematic diagram illustrating the formation of membrane nuclei, as shown in one example of the disclosure.

[0023] In this disclosure, a reference number accompanied by at least one numeric value (including, but not limited to, a subscript) and / or a lowercase alphabetic character (including, but not limited to, a lowercase letter) may be considered to refer to a specific instance and / or subset thereof of the element or feature described by that reference number. Referring to a reference number without referring to the attached value and / or character may, as the context indicates, generally refer to the element or feature described by the reference number and / or the set of all instances described therein. Similarly, a reference number may have the letter "x" instead of a digit. Referring to such a reference number may, as the context indicates, generally refer to the element or feature described by the reference number in which the letter "x" is replaced with a digit and / or the set of all instances described therein.

[0024] This disclosure includes certain details, non-limiting, such as specific architectures, interfaces, and / or technologies, for illustrative purposes rather than limitation, in order to provide a complete understanding of the disclosure. In some cases, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications are omitted so as not to obscure the description of the disclosure with unnecessary details.

[0025] Furthermore, it will be understood that the block diagrams reproduced herein can represent conceptual diagrams of explanatory components that embody the principles of this technology.

[0026] Accordingly, the components of the systems and methods are represented in the drawings by conventional symbols as necessary, so as not to obscure the disclosure by details that would be readily apparent to those skilled in the art who have an interest in the description herein, and only those specific details relevant to understanding the examples of the disclosure are shown.

[0027] Any drawings provided herein may not be drawn to a specific scale and should not be considered to limit this disclosure.

[0028] Any feature or behavior indicated by a dashed outline may be considered optional in some examples. [Modes for carrying out the invention]

[0029] The purpose of this disclosure is to eliminate or mitigate at least one drawback of the prior art.

[0030] This disclosure discloses a layered semiconductor device comprising a patterned film deposited on the exposed layer surface of a substrate in a first portion of its side surface and adapted to influence the vapor flux tendency of the deposited material condensed thereon, wherein the patterned film comprises a first material and a second material, each exhibiting at least one first material property and at least one second material property. The patterned film exhibits at least one third material property that differs from at least one of the first and second material properties with respect to at least one of their combinations and values. The third at least one material property distinguishes the exposed layer surface of the substrate from the exposed layer surface of the patterned film.

[0031] In a broad aspect, a layered semiconductor device includes a patterning coating deposited on an exposed layer surface of a base layer in a first portion of a side surface of the device and adapted to affect the tendency of a vapor flux of a deposition material to condense thereon, the patterning coating including a first material and a second material, the first material exhibiting at least one first material property, the second material exhibiting at least one second material property, the patterning coating exhibiting at least one third material property that is different from at least one of the at least one first material property and the at least one second material property in terms of at least one of their combinations and values, the at least one third material property distinguishing the exposed layer surface of the base layer from the exposed layer surface of the patterning coating.

[0032] In some non-limiting examples, the at least one material property can be selected from at least one of initial adhesion probability, transmittance, deposition contrast, surface energy, glass transition temperature, melting point, sublimation temperature, evaporation temperature, aggregation energy, optical gap, photoluminescence, refractive index, absorption coefficient, absorption or other optical effects, average layer thickness, molecular weight, and composition.

[0033] In some non-limiting examples, the deposition material can include at least one of metals and metal alloys.

[0034] In some non-limiting examples, the metal can include at least one of ytterbium (Yb), silver (Ag), and magnesium (Mg).

[0035] In some non-limiting examples, the metal alloy can include at least one of a silver (Ag) containing substance and magnesium silver (MgAg).

[0036] In some non-limiting examples, the first material can include a host at a concentration of at least one of at least about 99%, about 95%, about 90%, about 80%, about 70%, and about 50% of the patterning coating.

[0037] In some non-specific cases, the host can function as a nucleation-inhibiting coating (NIC).

[0038] In some non-limiting cases, the host may exhibit substantially high depositional contrast.

[0039] In some non-limiting examples, the second material may contain a dopant at a concentration of at least one of the following: less than or equal to about 1%, less than or equal to about 5%, less than or equal to about 10%, less than or equal to about 20%, less than or equal to about 30%, and less than or equal to about 50% of the patterning film.

[0040] In some non-specific cases, dopants can function as nucleation inhibitory coatings (NICs).

[0041] In some non-limiting cases, dopants can exhibit substantially high depositional contrast.

[0042] In some non-limiting cases, dopants may function as something other than a nucleation inhibitory coating (NIC).

[0043] In some non-limiting cases, dopants may exhibit substantially low depositional contrast.

[0044] In some non-limiting cases, dopants can function as nucleation-promoting coatings (NPCs).

[0045] In some non-limiting cases, dopants may exhibit substantially low depositional contrast.

[0046] In some non-restrictive examples, the host surface energy may be substantially at least the dopant surface energy.

[0047] In some non-limiting examples, each of the host and dopant may have a surface energy of approximately 5–20 dynes / cm.

[0048] In some non-limiting examples, the melting point of the host may be substantially at least the melting point of the dopant.

[0049] In some non-limiting examples, each of the host and dopant may have a melting point that is at least one of about 100°C, about 110°C, about 120°C, and about 130°C.

[0050] In some non-limiting examples, at least one of the host and the dopant may be an oligomer.

[0051] In some non-limiting examples, at least one combination of at least one material property and at least one value of at least one material property may differ between the dopant and the host.

[0052] In some non-limiting examples, at least one combination of at least one material property and at least one value of at least one material property may differ between the patterned coating and at least one of the host and the dopant.

[0053] In some non-limiting examples, the host and dopant may be characterized by at least one material property that is substantially similar in terms of at least one of equivalence, similarity, and proximity, within at least one of the ranges of values ​​and values.

[0054] In some non-limiting examples, the host and dopant may each be patterning material.

[0055] In some non-limiting examples, the characteristic surface energy of each of the host and the dopant can be at least one of about 25 dynes / cm or less, about 24 dynes / cm or less, about 22 dynes / cm or less, about 21 dynes / cm or less, about 20 dynes / cm or less, about 19 dynes / cm or less, about 18 dynes / cm or less, about 17 dynes / cm or less, about 16 dynes / cm or less, about 15 dynes / cm or less, about 14 dynes / cm or less, about 13 dynes / cm or less, about 12 dynes / cm or less, about 11 dynes / cm or less, and about 10 dynes / cm or less.

[0056] In some non-limiting examples, the absolute value of the difference between the characteristic surface energy of the host and the characteristic surface energy of the dopant can be at least one of about 1 dyne / cm or less, about 2 dynes / cm or less, about 3 dynes / cm or less, about 4 dynes / cm or less, about 5 dynes / cm or less, about 7 dynes / cm or less, and about 10 dynes / cm or less.

[0057] In some non-limiting examples, each of the host and the dopant can have a melting point that is at least one of at least about 100 °C, about 110 °C, about 120 °C, and about 130 °C.

[0058] In some non-limiting examples, the absolute value of the difference between the sublimation temperature of the host and the sublimation temperature of the dopant can be at least one of about 5 °C or less, about 10 °C or less, about 15 °C or less, about 20 °C or less, about 30 °C or less, about 40 °C or less, and about 50 °C or less.

[0059] In some non-limiting examples, each of the host and the dopant can have substantially the same evaporation temperature.

[0060] In some non-limiting examples, each of the host and the dopant can exhibit a refractive index that is at least one of about 1.55 or less, about 1.5 or less, about 1.45 or less, about 1.44 or less, about 1.43 or less, about 1.42 or less, about 1.41 or less, about 1.4 or less, about 1.39 or less, about 1.37 or less, about 1.35 or less, about 1.32 or less, and about 1.3 or less with respect to EM radiation having a wavelength of about 550 nm.

[0061] In some non-limiting examples, the molecular weight of the host and dopant may be at least one of the following: at least about 750 g / mol, 1,000 g / mol, 1,500 g / mol, 2,000 g / mol, 2,500 g / mol, and 3,000 g / mol.

[0062] In some non-limiting examples, the Tanimoto coefficient between the host and the dopant may be at least one of approximately 0.65, 0.7, 0.75, 0.8, 0.85, 0.9, and 0.95.

[0063] In some non-limiting examples, the host and dopant may each be patterning material.

[0064] In some non-limiting examples, both the host and the dopant may be oligomers.

[0065] In some non-limiting examples, each of the host and dopant may contain at least one common monomer.

[0066] In some non-limiting examples, each of the host and dopant may contain at least one common monomer backbone unit.

[0067] In some non-limiting examples, monomer backbone units may include phosphorus (P) and nitrogen (N).

[0068] In some non-restrictive examples, monomeric skeletal units may contain a phosphazene moiety.

[0069] In some non-limiting examples, parts of the molecular structures of the host and dopant may be represented by formula (VI), (NP-(LR x ) y ) n(VI) In the formula, NP represents a phosphazene monomer skeleton unit, L represents a linker group, R represents a functional group, x is an integer from 1 to 4, y is an integer from 1 to 3, and n is an integer of at least 2, where the value of n for the host is different from the value of n for the dopant.

[0070] In some non-restrictive examples, the absolute value of the difference between the host's n value and the dopant's n value may be 1.

[0071] In some non-restrictive examples, the value of n for at least one of the host and dopant may be 3, and the value of n for the other host and dopant may be 4.

[0072] In some non-limiting examples, parts of the molecular structures of the host and dopant may be represented by formula (VII), (NP(OR f )2) n (VII) where R f represents a fluoroalkyl group, where n is an integer between 3 and 7, and the value of n in the host is different from the value of n in the dopant.

[0073] In some non-restrictive examples, the absolute value of the difference between the host's n value and the dopant's n value may be 1.

[0074] In some non-restrictive examples, the value of n for at least one of the host and dopant may be 3, and the value of n for the other host and dopant may be 4.

[0075] In some non-limiting examples, the host monomer may contain at least one functional group that includes fluorine (F).

[0076] In some non-restrictive examples, at least one of the functional groups does not have to be totally fluorinated.

[0077] In some non-restrictive examples, none of the functional groups may be totally fluorine-substituted.

[0078] In some non-limiting examples, the host and dopant may be characterized by at least one material property that is substantially different with respect to the difference between at least one range of values ​​and ranges of values.

[0079] In some non-limiting cases, the dopant may exhibit a depositional contrast at least as large as that of the host.

[0080] In some non-limiting cases, the dopant may exhibit substantially low deposition contrast, and the host concentration may substantially exceed the dopant concentration.

[0081] In some non-restrictive examples, the characteristic surface energy of the host may exceed the characteristic surface energy of the dopant.

[0082] In some non-limiting examples, the host may have at least one characteristic surface energy of approximately 15–23 dynes / cm and approximately 18–22 dynes / cm.

[0083] In some non-limiting examples, the dopant may have at least one characteristic surface energy of about 6–22 dynes / cm, about 8–20 dynes / cm, about 10–18 dynes / cm, and about 10–15 dynes / cm.

[0084] In some non-limiting examples, the absolute value of the difference between the host characteristic surface energy and the dopant characteristic surface energy can be at least one of the following: about 1–13.5 dynes / cm, about 2–12 dynes / cm, about 3–11 dynes / cm, and about 5–10 dynes / cm.

[0085] In some non-limiting examples, the characteristic surface energy of the host may be about 16–22 dynes / cm, and the characteristic surface energy of the dopant may be about 10–15 dynes / cm.

[0086] In some non-limiting examples, the absolute difference between the characteristic surface energy of the host and the characteristic surface energy of the dopant can be at least 3 dynes / cm.

[0087] In some non-limiting examples, the absolute value of the difference between the host's characteristic surface energy and the dopant's characteristic surface energy can be at least one of approximately 3–8 dynes / cm and approximately 3–5 dynes / cm.

[0088] In some non-restrictive cases, the melting point of the host may exceed the melting point of the dopant.

[0089] In some non-limiting examples, each of the host and dopant may have a melting point that is at least one of about 80°C, about 100°C, about 110°C, about 120°C, and about 130°C.

[0090] In some non-limiting examples, the host may have a melting point that is at least one of about 130°C, about 150°C, about 200°C, and about 250°C.

[0091] In some non-limiting examples, the host may have a melting point that is at least one of the following: about 100–350°C, about 130–320°C, about 150–300°C, and about 180–280°C.

[0092] In some non-limiting examples, the dopant may have a melting point of at least one of the following: about 150°C or less, about 140°C or less, about 130°C or less, about 120°C or less, and about 110°C or less.

[0093] In some non-limiting examples, dopants may have melting points that are at least one of the following: about 50–150°C, about 80–150°C, about 65–130°C, and about 80–110°C.

[0094] In some non-limiting examples, the absolute value of the difference between the melting point of the host and the melting point of the dopant may be at least one of the following: about 10–200°C, about 20–200°C, about 50–180°C, about 80–150°C, and about 100–120°C.

[0095] In some non-limiting examples, the host may have at least one melting point among approximately 150–300°C, approximately 180–280°C, approximately 200–260°C, and approximately 220–250°C, and the dopant may have at least one melting point among approximately 100–150°C, approximately 100–130°C, and approximately 100–120°C.

[0096] In some non-limiting examples, the absolute value of the difference between the melting point of the host and the melting point of the dopant may be at least one of approximately 50–120°C, approximately 70–100°C, and approximately 80–100°C.

[0097] In some non-limiting examples, the absolute value of the difference between the host evaporation temperature and the dopant evaporation temperature may be at least one of the following: approximately 5°C or less, approximately 10°C or less, approximately 15°C or less, approximately 20°C or less, approximately 30°C or less, approximately 40°C or less, and approximately 50°C or less.

[0098] In some non-limiting examples, the host and dopant may each have an evaporation temperature of approximately 100–350°C.

[0099] In some non-limiting examples, the host and dopant may each have substantially similar evaporation temperatures.

[0100] In some non-limiting examples, the host may have at least one optical gap of at least about 3.4 eV, about 3.5 eV, about 4.1 eV, about 5 eV, and about 6.2 eV.

[0101] In some non-limiting examples, the host does not need to exhibit substantial absorption in at least one of the following wavelength ranges: around the visible spectrum, around the NIR spectrum, around 365 nm, and around 460 nm.

[0102] In some non-limiting examples, the host may have a molecular structure that includes at least one of the following: a cage structure, a cyclic structure, and an organic-inorganic hybrid structure.

[0103] In some non-limiting examples, each of the host and dopant may contain at least one of fluorine (F) and silicon (Si).

[0104] In some non-limiting examples, the host may contain a polyhedral oligomeric silsesquioxane (POSS) group, and the dopant may contain a cyclophosphazene group.

[0105] In some non-limiting examples, the host may contain F in at least one of the following proportions, depending on the percentage of the molecular weight of the compound: 25–75%, 25–70%, 30–70%, 35–50%, 35–45%, and 35–40%.

[0106] In some non-limiting examples, the dopant may contain F in at least one of the following proportions based on the percentage of the compound's molecular weight: 25–75%, 25–70%, 30–70%, 50–70%, 55–70%, and 60–70%.

[0107] In some non-limiting examples, the proportion of F in terms of the molecular weight of the dopant compound may exceed that of the host.

[0108] In some non-limiting examples, the host may contain F at a rate of approximately 35–45% of the compound's molecular weight, and the dopant may contain F at a rate of approximately 60–70% of the compound's molecular weight.

[0109] In some non-limiting examples, each of the host and dopant may include a continuous fluorinated carbon chain having at least one of 6 or less, 4 or less, 3 or less, 2 or less, and 1 or less.

[0110] In some non-restrictive examples, the host may contain Si.

[0111] In some non-limiting examples, the host may contain monomer backbone units that include silicon.

[0112] In some non-limiting examples, the host may comprise at least one of a polyhedral oligomeric silsesquioxane (POSS) group and a POSS derivative compound.

[0113] In some non-limiting examples, POSS derivative compounds may contain a functional group containing F.

[0114] In some non-limiting examples, both the host and the dopant may be oligomers.

[0115] In some non-limiting examples, the host can be a non-polymeric material.

[0116] In some non-restrictive cases, the host can be an oligomer.

[0117] In some non-limiting cases, the host may be a block oligomer.

[0118] In some non-restrictive examples, the host may include functional group terminal units.

[0119] In some non-limiting examples, the functional group terminal unit may include at least one of CF3 and CH2CF3.

[0120] In some non-limiting examples, each functional group of the host may contain only a single fluorinated carbon moiety.

[0121] In some non-limiting examples, the host functional group is any sp 2 Hybrid carbon (C) atoms may also be virtually absent.

[0122] In some non-limiting examples, the monomer of a dopant may contain a functional group containing fluorine (F).

[0123] In some non-limiting examples, the dopant may contain at least one of phosphazene, cyclophosphazene, and cyclophosphazene derivative groups.

[0124] In some non-limiting examples, dopants may contain monomer backbone units that include cyclophosphazenes.

[0125] In some non-limiting examples, cyclophosphazene derivatives may include functional groups containing fluorine (F).

[0126] In some non-limiting examples, the dopant may be a non-polymeric material.

[0127] In some non-restrictive cases, dopants can be oligomers.

[0128] In some non-restrictive cases, dopants can be block oligomers.

[0129] In some non-limiting cases, the dopant concentration in the patterning coating may be less than approximately 50%.

[0130] In some non-limiting cases, the concentration may be at least one of the following: approximately 40% or less, approximately 30% or less, approximately 25% or less, approximately 20% or less, approximately 15% or less, approximately 10% or less, and approximately 5% or less.

[0131] In some non-limiting examples, the concentration may be below the concentration corresponding to the eutectic point of the host-dopant mixture.

[0132] In some non-limiting examples, the concentration may be at least one of approximately 1%, approximately 3%, approximately 5%, approximately 7%, and approximately 10%.

[0133] In some non-limiting examples, the dopant may be a metallic fluoride containing fluorine (F) and at least one of alkali metals, alkaline earth metals, and rare earth metals.

[0134] In some non-limiting examples, the dopant may be at least one of lithium fluoride, magnesium fluoride, and ytterbium fluoride.

[0135] In some non-limiting examples, the host may have a characteristic surface energy of about 16–20 dynes / cm and a melting point of about 150–300°C.

[0136] In some non-limiting examples, the dopant may have both a characteristic surface energy of at least about 8 dynes / cm but lower than the characteristic surface energy of the host, and a melting point of at least about 100°C but lower than the melting point of the host.

[0137] In some non-limiting examples, the dopant may have both a characteristic surface energy of at least about 8 dynes / cm but at least 3 dynes / cm lower than the characteristic surface energy of the host, and a melting point of at least about 100°C but at least one of the following ranges: about 50–120°C, about 70–110°C, and about 80–100°C lower than the melting point of the host.

[0138] In some non-restrictive examples, the characteristic surface energy of the dopant is lower than the characteristic surface energy of the host by at least one of the following: approximately 3–8 dynes / cm and approximately 3–5 dynes / cm.

[0139] In some non-limiting cases, dopants may exhibit a photoluminescent response.

[0140] In some non-limiting cases, the host does not need to exhibit photoluminescence substantially.

[0141] In some non-limiting examples, the patterning coating may contain at least one of the following amounts of dopant: approximately 5% by weight or less, approximately 3% by weight or less, approximately 2% by weight or less, approximately 1% by weight or less, approximately 0.5% by weight or less, and approximately 0.1% by weight or less.

[0142] In some non-limiting examples, the dopant can create at least one heterogeneity, facilitating the formation of at least one nanoparticle structure thereon.

[0143] In some non-limiting examples, at least one heterogeneity may include a metallic element.

[0144] In some non-limiting examples, at least one heterogeneity may include a nonmetallic element selected from at least one of oxygen (O), sulfur (S), nitrogen (N), and carbon (C).

[0145] In some non-limiting examples, at least one heterogeneity is a nucleation-inhibiting coating (NPC).

[0146] In some non-limiting examples, a patterning coating may be deposited by providing a mixture comprising a first material and a second material, and depositing such a mixture onto the exposed layer surface of the substrate in the first portion.

[0147] In some non-limiting examples, a mixture may be provided by supplying a feed patterning material selected from one of the first material and the second material, and processing it to produce a generated patterning material containing the other of the first material and the second material.

[0148] In some non-limiting examples, the process may include heating the supply patterning material.

[0149] In some non-limiting examples, patterning films can be deposited by co-depositing a first material and a second material.

[0150] In some non-limiting examples, the first and second materials may be evaporated from a common evaporation source.

[0151] In some non-limiting examples, the first material may be evaporated from a first evaporation source, and the second material may be evaporated from a second evaporation source.

[0152] In a broader embodiment, the present invention discloses a layered semiconductor device comprising: a patterning coating provided on a first lateral portion of the device and adapted to influence the vapor flux tendency of a deposited material condensed thereon, the patterning coating comprising a host and a dopant; and a deposited layer provided on a second lateral portion of the device, the deposited layer comprising a deposited material.

[0153] In some non-limiting examples, the host may have a characteristic surface energy of approximately 15–22 dynes / cm, while the dopant may have a characteristic surface energy lower than that of the host.

[0154] In some non-limiting examples, the host may have a melting point between 130 and 300°C, and the dopant may have a lower melting point than the host.

[0155] In some non-limiting examples, each of the host and dopant may be an oligomer containing multiple monomers.

[0156] In some non-limiting examples, the host oligomer and the dopant oligomer may contain at least one common monomer.

[0157] In a broader embodiment, the present invention discloses a layered semiconductor device comprising: a first electrode and a second electrode; a semiconductor layer extending between the first electrode and the second electrode in a lateral plane of the device and defining a first layer surface, wherein the first layer surface extends across a first portion and a second portion in a lateral plane of the device; a patterning film deposited on the first layer surface in a first portion of the lateral plane of the device, the patterning film comprising a host and a dopant; and a second electrode disposed on the first layer surface in a second portion of the lateral plane of the device.

[0158] In some non-limiting examples, the host may have a characteristic surface energy of approximately 15–22 dynes / cm, while the dopant may have a characteristic surface energy lower than that of the host.

[0159] In some non-limiting examples, the host may have a melting point between 130 and 300°C, and the dopant may have a lower melting point than the host.

[0160] In some non-limiting examples, each of the host and dopant may be an oligomer containing multiple monomers.

[0161] In some non-limiting examples, the host oligomer and the dopant oligomer may contain at least one common monomer.

[0162] explanation Layered devices This disclosure generally relates to a layered semiconductor device 100, and more specifically to an optoelectronic device 1200 (Figure 12A). The optoelectronic device 1200 may generally encompass any device that converts an electrical signal to a photon, or vice versa. In some non-limiting examples, a layered semiconductor device, including but not limited to the optoelectronic device 1200, may serve as a surface 3401 (Figure 34) of a user device 1300 (Figure 13A), including but not limited to a display panel 1340 (Figure 13A).

[0163] Those skilled in the art will understand that although this disclosure relates to an optoelectronic device 1200, its principle may be applicable to any panel having multiple layers, which may include, but not necessarily, at least one layer of a conductive deposition material 531 (Figure 5), including a thin film, and in some non-limiting examples, an electromagnetic (EM) signal may pass through it, whole or partially, at a non-zero angle with respect to at least one plane of the layers.

[0164] Now, looking at Figure 1, a cross-sectional view of an exemplary layered semiconductor device 100 may be shown. In some non-limiting examples, as shown in more detail in Figure 16, the device 100 may include multiple layers deposited on a substrate 10.

[0165] A lateral axis identified as the X-axis may be shown together with a longitudinal axis identified as the Z-axis. A second lateral axis identified as the Y-axis may be shown as substantially crossing both the X-axis and the Z-axis. At least one of the lateral axes can define a lateral surface of the device 100. The longitudinal axis can define a lateral surface of the device 100.

[0166] The layers of device 100 may extend laterally, substantially parallel to a plane defined by the lateral axis. Those skilled in the art will understand that the substantially planar representation shown in Figure 1 may be abstracted for illustrative purposes in some non-limiting examples. In some non-limiting examples, there may be localized substantially planar layers of different thicknesses and dimensions over the lateral extent of device 100, and in some non-limiting examples, the layers may not be substantially complete and / or may include layers separated by non-planar transition regions (including lateral gaps and further discontinuities).

[0167] Therefore, for explanatory purposes, device 100 may be shown in its cross-sectional view as a substantially hierarchical structure of substantially parallel planar layers, but such device can locally illustrate a variety of topographies for defining features, each of which may substantially exhibit the hierarchical profile considered in the cross-sectional view.

[0168] As shown in Figure 1, the layers of device 100 include a substrate 10 and a patterned coating 130 disposed on at least a portion of the exposed layer surface 11 on its lateral side. In some non-limiting examples, the patterned coating 130 may have a lateral extent limited to a first portion 101, and the deposited layer 140 may be disposed as a closing coating 150 on the exposed layer surface 11 of device 100 in a second portion 102 on its lateral side. In some non-limiting examples, the second portion 102 may extend beyond the first portion 101 and include a portion of the exposed layer surface 11 of the underlying layer of the device.

[0169] In some non-limiting examples, at least one particle structure 160 may be disposed as a discontinuous layer 170 on the exposed layer surface 11 of the patterning film 130. In some non-limiting examples, there may be at least one intervening layer 110 between the substrate 10 and the patterning film 130. In some non-limiting examples, at least one of the intervening layers 110 may be at least one of the orientation layer 120 and the organic support layer 115 (collectively, the "underlayment") and / or may be connected to them.

[0170] In some non-limiting examples, the patterned coating 130, the deposited layer 140, and / or at least one particle structure 160 may be covered by at least one upper layer 180.

[0171] Patterning In some non-limiting examples, the patterning coating 130 is disposed as a closing coating 150 on the exposed layer surface 11 of the substrate of the device 100, and in some non-limiting examples, the lateral range is limited by selective deposition, including but not limited to using a shadow mask 415 (Figure 4), such as a fine metal mask (FMM), which includes but is not limited to a first portion 101. Thus, in some non-limiting examples, in a second portion 102 of the device 100, the exposed layer surface 11 of the substrate of the device 100 may substantially lack the closing coating 150 of the patterning coating 130.

[0172] Patterning coating Due to the properties of the patterned coating 130, the first portion 101 including the patterned coating 130 may substantially lack the sealing coating 150 of the deposited material 531.

[0173] However, exposure of the device 100 to the vapor flux of the deposited material 531 may, in some non-limiting examples, result in the formation of a closure film 150 of the deposited layer 130 of the deposited material 531 in the second portion 102, and the exposed layer surface 11 of the underlying layer substantially lacks the patterning film 130 (is uncoated).

[0174] Therefore, in some non-limiting examples, the patterning film 130 may also be a nucleation-inhibiting film (NIC) that provides high deposition (or patterning) contrast for subsequent deposition of the deposited material 531, and as a result, in some non-limiting examples, the deposited material 531 tends not to be deposited as a closed film 150 on which the patterning film 130 is deposited.

[0175] In some non-limiting examples, the patterning coating 130 may include the patterning material 411. In some non-limiting examples, the patterning material 411 may include the NIC material. In some non-limiting examples, the patterning coating 130 may include the closure coating 150 of the patterning material 411.

[0176] In some non-limiting examples, there may be scenarios where the patterning coating 130 in the first portion 101 needs to provide a patterning coating 130 that causes the formation of a discontinuous layer 170 of at least one particle structure 160 when the vapor flux of the deposition material 531 is applied thereto. In at least some applications, the attributes of the patterning coating 130 may be such that a closed coating 150 of the deposition material 531 may be formed in a second portion 102 that may substantially lack the patterning coating 130, while only a discontinuous layer 170 of at least one particle structure 160 having at least one characteristic can be formed in the first portion 101 on the patterning coating 130.

[0177] For the sake of brevity in discussion, in the present disclosure, as long as the patterning coating 130 is deposited and functions as a base for depositing at least one particle structure 160 thereon, such a patterning coating 130 may be referred to as a particle structure patterning coating 130 p In contrast, as long as the patterning coating 130 is deposited on the first portion 101 and substantially prevents the formation of such a closed coating 150 of the deposited layer 140 in such a first portion 101, and thus restricts the deposition of the closed coating 150 of the deposited layer 140 to the second portion 102, such a patterning coating 130 may be designated as a non-particle structure patterning coating 130 n One of ordinary skill in the art will understand that in some non-limiting examples, the patterning coating 130 may function as both a particle structure patterning coating 130 p and a non-particle structure patterning coating 130 n as well.

[0178] In some non-limiting examples, for example, scenarios may exist in which, while depositing a closed film 150 of a deposited material 531 having a thickness of at least one of approximately 100 nm or less, approximately 50 nm or less, approximately 25 nm or less, and approximately 15 nm or less, it is necessary to form a discontinuous layer 170 of at least one particle structure 160 of the deposited material 531 in a second portion 102, which may be a metal or metal alloy (metal / alloy) containing at least one of Ag-containing materials including but not limited to Yb, Ag, Mg, and MgAg. In some non-limiting examples, the relative amount of deposited material 531 deposited as a discontinuous layer 170 of at least one particle structure 160 in the first portion 101 may correspond to at least one of about 1-50%, about 2-25%, about 5-20%, and about 7-10% of the amount of deposited material 531 deposited as a closing film 150 in the second portion 102, and in non-limiting examples, may correspond to at least one of about 100 nm or less, about 75 nm or less, about 50 nm or less, about 25 nm or less, and about 15 nm or less.

[0179] In some non-limiting examples, the patterned coating 130 may be arranged in a pattern defined by at least one region thereof, which may substantially lack a closing coating 150 of the patterned coating 130. In some non-limiting examples, the patterned coating 130 may be separated into a plurality of separate fragments by at least one region. In some non-limiting examples, the plurality of separate fragments of the patterned coating 130 may be physically separated from each other laterally. In some non-limiting examples, the plurality of separate fragments of the patterned coating 130 may be arranged in a regular structure including, but not limited to, an array or matrix, and as a result, in some non-limiting examples, the separate fragments of the patterned coating 130 may consist of a repeating pattern.

[0180] In some non-limiting examples, at least one of several individual fragments of the patterned coating 130 may each correspond to a radiation region 1310. In some non-limiting examples, the aperture ratio of the radiation region 1310 may be at least one of approximately 50% or less, approximately 40% or less, approximately 30% or less, and approximately 20% or less.

[0181] In some non-limiting examples, the patterning coating 130 may be formed as a single monolithic coating.

[0182] Attributes of patterning coatings and / or patterning materials Initial attachment probability In some non-limiting examples, the patterning coating 130 can provide an exposed layer surface 11 with a relatively low initial adhesion probability to the deposition of the deposited material 531 (in some non-limiting examples, under the conditions specified in the dual QCM technique described by Walker et al.), and in some non-limiting examples, this initial adhesion probability can be substantially lower than the initial adhesion probability to the deposition of the deposited material 531 on the exposed layer surface 11 of the underlying layer of the device 100 on which the patterning coating 130 is deposited.

[0183] In some non-limiting examples, the initial adhesion probability of the patterning material 411 can be determined by depositing and / or coating such material as a film under conditions similar to those for depositing a patterning coating 130 in device 100, such that the film has a thickness sufficient to mitigate or reduce any influence on the degree of intermolecular interactions with the substrate when deposited on the surface of the substrate. In some non-limiting examples, the initial adhesion probability can be measured on a film or coating having a thickness of at least one of the following: at least about 20 nm, about 25 nm, about 30 nm, about 50 nm, about 60 nm, and about 100 nm.

[0184] Due to the low initial adhesion probability of the patterning coating 130 and / or patterning material 411, in some non-limiting examples, when deposited as a film and / or coating in morphology, under similar circumstances to the deposition of the patterning coating 130 in device 100, the exposed layer surface 11 of the patterning coating 130 may substantially lack a closing coating 150 of the deposited material 531, for example, in a first portion 101, resisting the deposition of the deposited material 531.

[0185] In some non-limiting examples, there may be a positive correlation between the initial adhesion probabilities of the patterning film 130 and / or patterning material 411, and, in some non-limiting examples, the deposition of the patterning film 130 within the device 100 under similar circumstances, with respect to the deposition of the deposited material 531 and the average layer thickness of the deposited material 531 thereon.

[0186] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, in some non-limiting examples, in the form of a film and / or coating, and when deposited under similar circumstances for the deposition of the patterning coating 130 within the device 100, may have an initial adhesion probability against the deposition of the deposition material 531 of at least one of about 0.9, about 0.3, about 0.2, about 0.15, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, about 0.001, about 0.0008, about 0.0005, about 0.0003, and about 0.0001.

[0187] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, in some non-limiting examples, in the form of a film and / or coating, and when deposited under similar circumstances for the deposition of the patterning coating 130 within the device 100, may have an initial adhesion probability against the deposition of at least one of silver (Ag) and magnesium (Mg), which is at least one of about 0.9 or less, about 0.3 or less, about 0.2 or less, about 0.15 or less, about 0.1 or less, about 0.08 or less, about 0.05 or less, about 0.03 or less, about 0.02 or less, about 0.01 or less, about 0.008 or less, about 0.005 or less, about 0.003 or less, about 0.001 or less, about 0.0008 or less, about 0.0005 or less, about 0.0003 or less, and about 0.0001 or less.

[0188] In some non-limiting examples, the patterning coating 130 and / or patterning material 411 may have an initial adhesion probability against the deposition of multiple deposition materials 531, including but not limited to Ag, Mg, ytterbium (Yb), cadmium (Cd), and zinc (Zn), selected from at least one of these, which is below a threshold when deposited as a film and / or a coating in some form within the device 100. In some non-limiting examples, such thresholds may be at least one of approximately 0.9, 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001. In some further non-limiting examples, the patterning coating 130 may exhibit an initial adhesion probability below such thresholds, resisting the deposition of multiple depositing materials 531 selected from at least one of Ag, Mg, and Yb.

[0189] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, in some non-limiting examples, as a film and / or coating in some form, and when deposited under similar circumstances for the deposition of the patterning coating 130 within the device 100, are approximately 0.15 to 0.0001, approximately 0.1 to 0.0003, approximately 0.08 to approximately 0.0005, and approximately 0.08 to 0.00. 08, approximately 0.05~0.001, approximately 0.03~0.0001, approximately 0.03~0.0003, approximately 0.03~0.0005, approximately 0.03~0.0008, approximately 0.03~0.001, approximately 0.03~0.005, approximately 0.03~0.008, approximately 0.03~0.01, approximately 0.02~0.0001, approximately 0.02~0.0003, approximately 0.02~0.0005, approximately 0.02~0.000 8, approximately 0.02~0.001, approximately 0.02~0.005, approximately 0.02~0.008, approximately 0.02~0.01, approximately 0.01~0.0001, approximately 0.01~0.0003, approximately 0.01~0.0005, approximately 0.01~0.0008, approximately 0.01~0.001, approximately 0.01~0.005, approximately 0.01~0.008, approximately 0.008~0.0001, approximately 0.008~0.000 3. It may have an initial adhesion probability against the deposition of at least one of the following depositing materials 531: approximately 0.008-0.0005, approximately 0.008-0.0008, approximately 0.008-0.001, approximately 0.008-0.005, approximately 0.005-0.0001, approximately 0.005-0.0003, approximately 0.005-0.0005, approximately 0.005-0.0008, and approximately 0.005-0.001.

[0190] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, when deposited as a film and / or a coating in some form and under similar circumstances for the deposition of the patterning coating 130 within the device 100, may exhibit an initial adhesion probability against the deposition of a first deposition material 531 below a first threshold and an initial adhesion probability against the deposition of a second deposition material 531 below a second threshold. In some non-limiting examples, the first deposition material 531 may be Ag and the second deposition material 531 may be Mg. In some other non-limiting examples, the first deposition material 531 may be Ag and the second deposition material 531 may be Yb. In some other non-limiting examples, the first deposition material 531 may be Yb and the second deposition material 531 may be Mg. In some non-limiting examples, the first threshold may exceed the second threshold.

[0191] Transmittance Those skilled in the art will understand that a sample with relatively little and / or no deposited material 531, including but not limited to metals / alloys containing at least one of Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg, may be substantially transparent, while a sample with a substantial amount of metal / alloy deposited, including but not limited to a closing film 150, may exhibit substantially reduced transmittance in some non-limiting examples. Thus, the relative performance of various exemplary coatings as patterning films 130 can be evaluated by measuring the transmittance through a sample, and this transmittance may positively correlate with the amount and / or average thickness of deposited material 531, including but not limited to metals / alloys containing at least one of Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg, deposited thereon, as a thin metal film, including but not limited to when formed as a closing film 150, may exhibit high absorption of EM radiation.

[0192] In some non-limiting examples, the patterning coating 130 and / or patterning material 411 may, in some non-limiting examples, have a transmittance to EM radiation of at least a threshold transmittance value when deposited as a film and / or coating in some form, and after being exposed to a vapor flux of a deposit material 531 containing but not limited to Ag, under similar circumstances to the deposition of the patterning coating 130 in the device 100.

[0193] In some non-limiting examples, such transmittance may be measured after exposure of the exposed layer surface 11 of a patterning film 130 and / or patterning material 411, which is formed as a thin film under typical conditions and can be used to deposit electrodes for optoelectronic devices, which may be cathodes for organic light-emitting diode (OLED) devices, to a vapor flux of a deposit material 531 which contains but is not limited to a metal / alloy containing at least one of Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg.

[0194] In some non-limiting examples, the conditions for subjecting the exposed layer surface 11 to a vapor flux of a deposit material 531 containing a metal / alloy containing at least one of the Ag-containing materials, including but not limited to Yb, Ag, Mg, and MgAg, may be as follows: (i) a vacuum pressure of about 10 -4 Torr or 10 -5(ii) Maintaining a reference pressure including but not limited to Torr; (ii) The vapor flux of the deposited material 531, which includes but not limited to metals / alloys containing at least one of Ag-containing substances including but not limited to Yb, Ag, Mg, and MgAg, is substantially consistent with a reference deposition rate including but not limited to about 1 angstrom (Å) / second, which can be monitored and / or measured using a QCM, as an example not limited to; (iii) The vapor flux of the deposited material 531 is directed toward the exposed layer surface 11 at an angle substantially close to perpendicular to the plane of the exposed layer surface 11. (iv) The exposed layer surface 11 is subjected to a vapor flux of a deposited material 531 containing a metal / alloy containing at least one of Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg, until the exposed layer surface 11 reaches a reference average layer thickness containing but not limited to approximately 15 nm; and (v) Once such a reference average layer thickness is reached, the exposed layer surface 11 is not subjected to further vapor flux of the deposited material 531 containing a metal / alloy containing at least one of Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg.

[0195] In some non-limiting examples, the exposed layer surface 11 subjected to the vapor flux of the deposit material 531 containing but not limited to Ag may be substantially at room temperature (e.g., about 25°C). In some non-limiting examples, the exposed layer surface 11 subjected to the vapor flux of the deposit material 531 containing but not limited to metals / alloys containing but not limited to Yb, Ag, Mg, and MgAg may be located about 65 cm away from the evaporation source from which the deposit material 531 evaporates.

[0196] In some non-limiting examples, the threshold transmittance value may be measured at wavelengths in the visible spectrum. In some non-limiting examples, the threshold transmittance value may be measured at wavelengths in the visible spectrum that are at least one of approximately 460 nm, approximately 500 nm, approximately 550 nm, and approximately 600 nm. In some non-limiting examples, the threshold transmittance value may be measured at wavelengths in the IR spectrum and / or NIR spectrum. In some non-limiting examples, the threshold transmittance value may be measured at at least one of approximately 700 nm, approximately 900 nm, and approximately 1000 nm. In some non-limiting examples, the threshold transmittance value can be expressed as the percentage of incident EM power that can penetrate the sample. In some non-limiting examples, the threshold transmittance value may be at least one of approximately 60%, approximately 65%, approximately 70%, approximately 75%, approximately 80%, approximately 85%, and approximately 90%.

[0197] Examples A series of samples were prepared to measure the transmittance of exemplary materials and to visually observe whether a closure film 150 of the deposited material 531 was formed in the form of Ag on the exposed layer surface 11 of such exemplary materials. Each sample was prepared by depositing a film of the exemplary material with a thickness of approximately 50 nm on a glass substrate 10, and then exposing the exposed layer surface 11 of the film to a vapor flux of the deposited material 531 at a rate of approximately 1 Å / sec in the form of Ag until a reference layer thickness of approximately 15 nm was reached.

[0198] Table 1 shows the molecular structures of the exemplary materials used in the samples described herein.

[0199] [Table 1-1]

[0200] [Table 1-2]

[0201] [Table 1-3]

[0202] [Table 1-4]

[0203] Next, each sample was visually analyzed, and the transmittance through each sample was measured.

[0204] Those skilled in the art will understand that a sample with relatively little and / or no deposited material 531, including but not limited to metals / alloys containing at least one of Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg, may be substantially transparent, while a sample with a substantial amount of metal / alloy deposited, including but not limited to a closing film 150, may exhibit substantially reduced transmittance in some non-limiting examples. Thus, the relative performance of various exemplary coatings as patterning films 130 can be evaluated by measuring the transmittance through a sample, and this transmittance may positively correlate with the amount and / or average thickness of deposited material 531, including but not limited to metals / alloys containing at least one of Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg, deposited thereon, as a thin metal film, including but not limited to when formed as a closing film 150, may exhibit high absorption of EM radiation.

[0205] The substantial closure film 150 of the deposited material 531 was visually identified in samples formed in the form of Ag. The presence of such closure films 150 in these samples was further confirmed by measuring the transmittance passing through them, which showed a transmittance of approximately 50% or less at a wavelength of approximately 460 nm.

[0206] In addition, for samples in which the formation of a closure film 150 in the Ag morphology of the deposited material 531 was identified as absent, the absence of such a closure film 150 in these samples was further confirmed by measuring the EM transmittance through them, which showed a transmittance of at least about 70% (of EM radiation at a wavelength of about 460 nm).

[0207] The results are summarized in Table 2 below.

[0208] [Table 2]

[0209] Based on the above, it was found that the materials used in the first seven samples (HT211~EM-2) in Tables 1 and 2, as well as in samples EM-9 and EM-15, may have reduced applicability in some scenarios to suppress the deposition of deposit material 531 on them, which may include but are not limited to metals / alloys containing at least one of the Ag-containing materials, including but not limited to Yb, Ag, Mg, and / or MgAg.

[0210] On the other hand, it was found that the materials used in samples EM-4 to EM-14, excluding EM-9, may have applicability in some scenarios to function as patterning coatings 130 to suppress the deposition of deposit materials 531 on them, including but not limited to metals / alloys containing at least one of the following Ag-containing materials: Yb, Ag, Mg, and MgAg.

[0211] Sedimentary contrast In some non-limiting examples, if the substrate 10 tends to function as a nucleation-promoting coating (NPC) 720, and a portion thereof is coated with a patterning material 411 which may tend to function as a NIC for the deposition of a deposition material 531 which may include but not be limited to a metal / alloy containing at least one of the Ag-containing substances including but not limited to Yb, Ag, Mg, and MgAg, then the coated portion (first portion 101) and the uncoated portion (second portion 102) may tend to have different initial adhesion probabilities and / or nucleation rates, such that the deposition material 531 deposited thereon may tend to have different average film thicknesses.

[0212] As used herein, in such a scenario, the quotient obtained by dividing the average thickness of the deposited material 531 deposited in the second portion 102 by the average thickness of the deposited material in the first portion 101 may generally be referred to as the deposition (or patterning) contrast. Thus, if the deposition contrast is substantially high, the average thickness of the deposited material 531 in the second portion 102 may be substantially greater than the average thickness of the deposited material 531 in the first portion 101.

[0213] In some non-limiting examples, materials including, but not limited to, a patterning material 411 that can function as a NIC for a given deposition material 531 may have substantially high deposition contrast when deposited on the substrate 10.

[0214] In some non-limiting cases, there may be a negative correlation between the initial adhesion probability of the patterning film 130 and / or patterning material 411, and, in some non-limiting cases, the deposition of the patterning film 130 within the device 100 under similar conditions, with respect to the deposition of the deposited material 531 and its deposition contrast; in other words, a low initial adhesion probability may be highly correlated with a high deposition contrast.

[0215] In some non-limiting examples, when the deposition contrast is substantially high, there may be little to no deposition of depositional material 531 in the first portion 101 when there is sufficient deposition of depositional material 531 to form a closure film 150 of the depositional material 531 in the second portion 102.

[0216] In some non-limiting examples, when the deposition contrast is substantially low, there may be discontinuous layers 170 of at least one particle structure 160 of the deposited material 531 deposited in the first portion 101, when there is sufficient deposition of the deposited material 531 in the second portion 102 to form a closure film 150.

[0217] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially high deposition contrast with respect to the deposition of the deposited material 531 may have reduced applicability in some scenarios where a reduced deposition contrast is required, such as when the average layer thickness of the deposited material 531 in the first portion 101 is substantially small, including, but not limited to, at least one of about 100 nm or less, about 50 nm or less, about 25 nm or less, and about 15 nm or less, such as when the deposition of a discontinuous film 170 of at least one particle structure 160 of the deposited material 531 in the second portion 102 is required.

[0218] In some non-limiting examples, there may be scenarios in which the formation of a discontinuous layer 170 of at least one particle structure 160 of the deposited material 531 is required in the second part 102, including but not limited to the formation of such NPs in the second part 102, including but not limited to at least one of about 100 nm or less, about 50 nm or less, about 25 nm or less, and about 15 nm or less, which is necessary because the absorption of EM radiation by nanoparticles (NPs) is necessary to protect the underlying layer from EM radiation having wavelengths of about 460 nm or less.

[0219] In some non-limiting examples, such scenarios may be applicable to at least one of the following sedimentary contrasts: approximately 2–100, approximately 4–50, 5–20, and approximately 10–15.

[0220] In some non-limiting examples, materials including, but not limited to, patterning material 411 having substantially low deposition contrast with respect to the deposition of the deposited material 531 may have reduced applicability in some scenarios requiring substantially high deposition contrast, such as when the average layer thickness of the deposited material 531 in the first portion 101 is large and includes, but not limited to, at least one of about 95 nm, about 45 nm, about 20 nm, about 10 nm, and about 8 nm.

[0221] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially low deposition contrast with respect to the deposition of the deposited material 531, where the average layer thickness of the deposited material 531 in the first portion 101 is large and includes, but not limited to, at least one of about 95 nm, about 45 nm, about 20 nm, about 10 nm, and about 8 nm, the applicability may be reduced in some scenarios requiring substantially high deposition contrast, including, but not limited to, scenarios requiring increased transparency to EM radiation having a wavelength of at least about 460 nm, and some scenarios requiring substantially absent absorption of EM radiation in at least one of the visible spectrum and NIR spectrum.

[0222] In some non-limiting examples, materials including but not limited to patterning material 411 for the deposition of the deposited material 531 may be applicable in some scenarios requiring discontinuous layers 170 or low density of the particle structure 160 of the deposited material 531 in the first part 101, provided that the average layer thickness of the closing film 150 of the deposited material 531 in the second part 102 is substantially high and includes but not limited to at least one of about 95 nm, about 45 nm, about 20 nm, about 10 nm, and about 8 nm. In some non-limiting examples, deposition contrasts of about 2-100, about 4-50, about 5-20, and about 10-15 may be applicable in some scenarios where the average layer thickness of the deposited material 531 in the second part 102 is substantially high and includes but not limited to at least one of about 95 nm, about 45 nm, about 20 nm, about 10 nm, and about 8 nm.

[0223] Surface energy When the characteristic surface energy is used herein, particularly in relation to materials, it may generally refer to the surface energy determined from such material.

[0224] As a non-limiting example, characteristic surface energy can be measured from a surface formed by a material deposited and / or coated in thin film form.

[0225] In some non-limiting examples, materials including but not limited to patterning materials 411 that may tend to function as NICs for deposition materials 531, including but not limited to metals / alloys containing at least one of Mg, Ag, and MgAg, may tend to exhibit substantially low surface energy when deposited as a thin film or coating on an exposed layer surface 11.

[0226] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, in some non-limiting examples, in the form of a film and / or coating, and when deposited under similar circumstances for the deposition of the patterning coating 130 within the device 100, may have at least one of the following surface energies: about 23 dynes / cm or less, about 22 dynes / cm or less, about 21 dynes / cm or less, about 20 dynes / cm or less, about 19 dynes / cm or less, about 18 dynes / cm or less, about 17 dynes / cm or less, about 16 dynes / cm or less, about 15 dynes / cm or less, about 14 dynes / cm or less, about 13 dynes / cm or less, about 12 dynes / cm or less, about 11 dynes / cm or less, and about 10 dynes / cm or less.

[0227] In some non-limiting examples, there may be scenarios requiring a patterning material 411 having a substantially low surface energy, not excessively low, including but not limited to approximately 10–22 dynes / cm.

[0228] In some non-limiting examples, materials including but not limited to patterning materials 411 that can function as NICs for deposited materials 531, including but not limited to metals / alloys

[0229] In some non-limiting examples, materials including but not limited to patterning materials 411 having substantially low but not excessively low surface energies may be applicable in some scenarios requiring sufficient reliability under at least one of shear stress and bending stress, including but not limited to devices fabricated on a flexible substrate 10.

[0230] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, when deposited as a film and / or a coating in some non-limiting examples, and under similar circumstances for the deposition of the patterning coating 130 within the device 100, may have a surface energy that is at least one of about 6 dynes / cm, about 7 dynes / cm, about 8 dynes / cm, about 9 dynes / cm, about 10 dynes / cm, about 12 dynes / cm, and about 13 dynes / cm.

[0231] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, in some non-limiting examples, in the form of a film and / or coating, and when deposited under similar circumstances for the deposition of the patterning coating 130 within the device 100, may have a surface energy that is at least one of about 10–22 dynes / cm, about 13–22 dynes / cm, about 15–20 dynes / cm, and about 17–20 dynes / cm.

[0232] In some non-limiting examples, materials including but not limited to patterning materials 411 that can function as NICs for deposited materials 531, including but not limited to metals / alloys containing at least one of Yb, Ag, Mg, and MgAg, which have substantially high surface energies, may be applicable in some scenarios requiring discontinuous layers 170 or low density of at least one particle structure 160 of deposited material 531 in the first part 101, provided that the average layer thickness of the closure film 150 of the deposited material 531 in the second part 102 is substantially low, including but not limited to at least one of about 100 nm or less, about 50 nm or less, about 25 nm or less, and about 15 nm or less.

[0233] While we do not wish to be bound by any particular theory, it can be assumed that, in some non-limiting examples, materials including but not limited to patterning material 411 with substantially high surface energy may be applicable to some scenarios requiring substantially high temperature reliability.

[0234] Various methods and theories are known for determining the surface energy of solids.

[0235] As an unrestricted example, surface energy may be calculated and / or derived based on a series of measurements of the contact angles at which various liquids can come into contact with a solid surface, in order to determine the contact angle between the liquid-vapor interface and the surface. In some unrestricted examples, the surface energy of a solid surface may be equal to the surface tension of the liquid having the highest surface tension to completely wet the surface.

[0236] In some non-limiting examples, the characteristic surface energy of a material including but not limited to a patterning film 130, including but not limited to a patterning film 130, can be determined by depositing the material on a substrate 10 as a film of substantially a single molecular component and measuring its contact angle with a suitable set of probe liquids.

[0237] As a non-restrictive example, a Zisman plot shows complete wetting with the surface (i.e., a contact angle θ of 0°). c It can be used to determine the surface tension value that results in ).

[0238] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, in some non-limiting examples, in the form of a film and / or coating, and when deposited under similar circumstances for the deposition of the patterning coating 130 within the device 100, may have a contact angle with respect to a nonpolar solvent including but not limited to tetradecane, which is at least one of about 40°, about 45°, about 50°, about 55°, about 60°, about 65°, and about 70°.

[0239] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, in some non-limiting examples, in the form of a film and / or coating, and when deposited under similar circumstances for the deposition of the patterning coating 130 within the device 100, may have at least one contact angle of about 15° or less, about 10° or less, about 8° or less, and about 5° or less with respect to a polar solvent, including but not limited to water.

[0240] In some non-restrictive cases, the critical surface tension of a surface can be determined according to the Zisman method.

[0241] Examples As a non-limiting example, a series of samples were prepared to measure the critical surface tension of surfaces formed from various materials. The measurement results are summarized in Table 3.

[0242] [Table 3]

[0243] Based on the above-described measurements of critical surface tension in Table 3 and previous observations regarding the presence or absence of a substantially closed coating 150 on the Ag-formed deposited material 531, it has been found that materials that form substantially low surface energy surfaces when deposited as a coating including but not limited to a patterning coating 130 may, as non-limiting examples, be materials having a critical surface tension of about 12–22 dynes / cm and may be suitable for forming a patterning coating 130 and inhibiting the deposition of the deposited material 531 thereon, which includes but is not limited to at least one of Ag-containing substances including but not limited to Yb, Ag, Mg, and MgAg.

[0244] While we do not wish to be bound by any particular theory, it has been found that a patterning film 130 containing a patterning material 411 that exhibits a relatively high surface energy when deposited as a thin film can form a discontinuous layer 170 of at least one particle structure 160 of the deposited material 531 in the first portion 101 and a closing film 150 of the deposited material 531 in the second portion 102, when the thickness of the closing film 150 is, in some non-limiting examples, at least one of approximately 100 nm or less, approximately 75 nm, approximately 50 nm or less, approximately 25 nm or less, and approximately 15 nm or less.

[0245] Thermal properties glass transition temperature In some non-limiting examples, the patterning coating 130 and / or patterning material 411, in some non-limiting examples, when deposited in the form of a film and / or coating and under similar circumstances for the deposition of the patterning coating 130 in device 100, may have a glass transition temperature of (i) at least one of about 300°C, about 200°C, about 170°C, about 150°C, about 130°C, about 120°C, about 110°C, and about 100°C, and (ii) at least one of about 20°C or less, about 0°C or less, about -20°C or less, about -30°C or less, and about -50°C or less.

[0246] As a non-limiting example, it is hypothesized that patterning material 411 that does not undergo a glass transition in the typical operating temperature range, which may be approximately 25°C to 80°C, for consumer electronic devices may be desirable for use in applications where it could contribute to improving the stability of such devices.

[0247] melting point In some non-limiting examples, materials including, but not limited to, patterning material 411 with substantially low intermolecular forces may tend to exhibit substantially low melting points.

[0248] In some non-limiting examples, the patterning material 411 may have a melting point at atmospheric pressure of at least one of the following: at least about 100°C, about 120°C, about 140°C, about 160°C, about 180°C, and about 200°C.

[0249] In some non-limiting examples, patterning materials 411 having substantially low melting points may have reduced applicability in some scenarios requiring sufficient temperature reliability to at least one of the following temperatures: below about 60°C, below about 80°C, and below about 100°C, due to changes in the physical properties of such materials at operating temperatures approaching their melting point.

[0250] In some non-limiting examples, materials with a melting point of approximately 120°C may have reduced applicability in certain scenarios requiring substantially high temperature reliability, including but not limited to at least approximately 100°C.

[0251] In some non-limiting examples, materials including, but not limited to, patterning material 411 having a substantially high melting point may be applicable in some scenarios requiring substantially high temperature reliability.

[0252] Examples As a non-limiting example, the melting points of the materials in the selected examples were measured using differential scanning calorimetry. Specifically, the melting point for each sample was determined during a second heating cycle at a heating rate of 10°C / min. The measurement results are summarized in Table 4.

[0253] [Table 4]

[0254] sublimation temperature In some non-limiting examples, materials including, but not limited to, patterning material 411 with substantially low intermolecular forces may tend to exhibit substantially low sublimation temperatures.

[0255] In some non-limiting examples, materials with low sublimation temperatures may have reduced applicability to manufacturing processes requiring substantially high degree of control over the thickness of the deposited film of the material. For example, materials with sublimation temperatures of at least one of the following ranges may impose constraints on controlling the deposition rate and thickness of films deposited using deposition methods, including but not limited to vacuum thermal deposition. In some non-limiting examples, materials with substantially high sublimation temperatures may have applications in certain scenarios requiring substantially high degree of control over the average thickness of the closure film 150 of the deposited material 531.

[0256] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially low sublimation temperatures may have reduced applicability to manufacturing processes that require substantially precise control of the average layer thickness of the closure film 150 of the deposited material 531.

[0257] In some non-limiting examples, patterning materials 411 having sublimation temperatures of at least one of approximately 140°C or less, approximately 120°C or less, approximately 110°C or less, approximately 100°C or less, and approximately 90°C or less may tend to encounter constraints on at least one of the deposition rate and average thickness of films containing such materials that can be deposited using known deposition methods, including but not limited to vacuum thermal deposition.

[0258] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially high sublimation temperatures may be applicable in some scenarios where substantially high precision is required in controlling the average layer thickness of films containing such materials.

[0259] In some non-limiting examples, patterning materials 411 having sublimation temperatures of at least one of approximately 350°C or less, approximately 400°C or less, and approximately 500°C or less may, in some non-limiting examples, tend to encounter limitations in the ability to process such materials for deposition as thin films using vacuum thermal deposition in certain tool configurations, due to substantially high sublimation temperatures.

[0260] In some non-limiting examples, the patterning material 411 may have a sublimation temperature under high vacuum of at least one of approximately 100–320°C, approximately 120–300°C, approximately 140–280°C, or approximately 150–250°C. In some non-limiting examples, such sublimation temperatures may allow the patterning material 411 to be substantially readily deposited as a coating using PVD.

[0261] The sublimation temperature of the patterning material 411, including but not limited to the patterning material 411, can be determined using various methods apparent to those skilled in the art, including, as a non-limiting example, about 10 -4 Heating a material in a Torr evaporation source under substantially high vacuum, including but not limited to a crucible, and, Observe the beginning of material deposition on the exposed layer surface 11 on the QCM, which is attached at a certain distance from the crucible. Observe a specific deposition rate, as an example non-limiting, of 0.1 Å / sec, on the exposed layer surface 11 on the QCM attached at a certain distance from the crucible, and / or As a non-exclusive example, about 10 -4 or 10 -5 This includes, but is not limited to, determining the temperature that can be achieved to reach the threshold vapor pressure of the Torr material.

[0262] In some non-limiting cases, the QCM can be mounted approximately 65 cm away from the crucible for the purpose of determining the sublimation temperature.

[0263] Energy of cohesion According to Young's equation, the cohesive energy (or fracture toughness or cohesive strength) of a material may tend to be proportional to its surface energy (see Young, Thomas (1805), "An essay on the cohesion of fluids," Philosophical Transactions of the Royal Society of London, 95:65-87).

[0264] According to Lindemann's criteria, the cohesive energy of a material may tend to be proportional to its melting temperature (see Nanda, KK, Sahu, SN, and Behera, SN (2002) "Liquid-drop model for the size-dependent melting of low-dimensional systems" Phys. Rev. A. 66(1): 013208).

[0265] In some non-limiting examples, materials including, but not limited to, patterning material 411 with substantially low intermolecular forces may tend to exhibit substantially low cohesive energy.

[0266] In some non-limiting examples, materials including but not limited to patterning materials 411 having substantially low cohesive energy may have shown reduced applicability in some scenarios requiring sufficient fracture toughness in devices that may be prone to being subjected to at least one of shear stress and bending stress during at least one of manufacturing and use, and therefore, in such scenarios, the material may be prone to cracking or fracture. In some non-limiting examples, materials including but not limited to patterning materials 411 having a cohesive energy of about 30 dynes / cm or less may have shown reduced applicability in some scenarios in devices manufactured on a flexible substrate 10.

[0267] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially high cohesive energy may be applicable in some scenarios requiring substantially high reliability under at least one of shear stress and bending stress, including, but not limited to, devices fabricated on a flexible substrate 10.

[0268] Examples As a non-limiting example, a series of samples were prepared to determine the point of failure during delamination or interlayer delamination. Specifically, each sample was prepared by depositing a layer of approximately 50 nm thick of each exemplary material, functioning as a patterning film 130, followed by a layer of approximately 50 nm thick of an organic material commonly used as a capping layer (CPL) on a glass substrate 10. Adhesive tape was then applied to the exposed layer surface 11 of the CPL of each sample. The adhesive tape was peeled off to induce interlayer delamination (cohesive failure) in each sample, and the peeled adhesive tape and the delaminated sample were analyzed to determine which layer (or interface with an adjacent layer) the failure occurred in. Samples in which failure occurred within the patterning film 130 or at the interface between the patterning film 130 and an adjacent layer were identified as failing the delamination test, while samples in which failure occurred within the CPL (i.e., cohesive failure within the CPL) were identified as passing the delamination test. Table 5 summarizes the results of such analyses.

[0269] [Table 5]

[0270] Based on the above analysis of the delamination test and previous observations regarding the melting point and critical surface tension of the exemplary materials, it was found that samples prepared using a patterning coating 130 containing EM-8 as the patterning material 411 (which exhibited both a melting point and critical surface tension greater than both EM-10 and EM-11) showed fracture occurring within the CPL, in that the CPL separated and a new surface was formed. On the other hand, samples prepared using a patterning coating 130 containing EM-10 and EM-11 as the patterning material 411, respectively, showed fracture occurring within the patterning coating 130, in that the patterning coating 130 separated and a new surface was formed.

[0271] While we do not wish to be bound by any particular theory, it can be assumed that this is due to the cohesive energy of the CPL being lower than both the cohesive energy of the patterning film 130 and the adhesion energy at the interface between the patterning film 130 and the CPL, when the patterning material 411 contains EM-8. Conversely, each patterning film 130 formed by the patterning material 411 containing one of EM-4, EM-10, EM-11, EM-12, EM-13, and EM-14 exhibits a cohesive energy lower than both the cohesive energy of the CPL and the adhesion energy at the interface between the patterning film 130 and the CPL for such a sample, resulting in delamination due to cohesive failure occurring within the patterning film 130 of both samples.

[0272] Optical Gap or Band Gap In this disclosure, semiconductor materials can generally be described as materials exhibiting a band gap. In some non-limiting examples, the band gap may be formed between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the semiconductor material. Thus, semiconductor materials may tend to exhibit conductivity that is substantially less than or equal to that of conductive materials (including but not limited to metals / alloys), but substantially at least the same as that of insulating materials (including but not limited to glass). In some non-limiting examples, semiconductor materials may include organic semiconductor materials. In some non-limiting examples, semiconductor materials may include inorganic semiconductor materials.

[0273] In some non-limiting examples, the optical gaps of materials, including but not limited to patterned material 411, may tend to correspond to the HOMO-LUMO gaps of the material.

[0274] In some non-limiting examples, patterning materials 411 having substantially large or wide optical gaps (and / or HOMO-LUMO gaps) may tend to exhibit substantially weak or substantially no photoluminescence in at least one of the deep B (blue) region of the visible spectrum, the near-UV spectrum, the visible spectrum, and / or the NIR spectrum.

[0275] In some non-limiting examples, materials with substantially small HOMO-LUMO gaps may be applicable in scenarios where optical techniques are used to detect the film of the material.

[0276] In some non-limiting examples, the optical gap of the patterning material 411 can be wider than the photon energy of the EM radiation emitted by the source, such that the patterning material 411 does not undergo photoexcitation when exposed to such EM radiation.

[0277] Photoluminescence As a non-limiting example, the photoluminescence of coatings and / or materials can be observed through a photoexcitation process. In a photoexcitation process, the coatings and / or materials may be exposed to radiation emitted by an EM source such as a UV lamp.

[0278] When radiation emitted by an EM source is absorbed by a coating and / or material, electrons within the coating and / or material may be transiently excited. Following the excitation, one or more relaxation processes may occur, including but not limited to fluorescence and phosphorescence, which cause the coating and / or material to emit EM radiation. The EM radiation emitted by the coating and / or material during such processes may be detected, for example, by a photodetector to characterize the photoluminescence properties of the coating and / or material.

[0279] As used herein, the wavelength of photoluminescence relating to a coating and / or material can generally refer to the wavelength of EM radiation emitted by such coating and / or material as a result of the relaxation of electrons from an excited state. Those skilled in the art will understand that the wavelength of EM radiation emitted by a coating and / or material as a result of a photoexcitation process may generally be longer than the wavelength of EM radiation used to initiate the photoexcitation. Photoluminescence can be detected and / or characterized using a variety of techniques known in the art, including but not limited to optical detection techniques, including but not limited to fluorescence microscopy.

[0280] In some non-limiting examples, the optical gaps of various coatings and / or materials may correspond to the energy gaps of the coatings and / or materials where EM radiation is absorbed or emitted during the photoexcitation process.

[0281] In some non-limiting examples, photoluminescence may be detected and / or characterized by exposing coatings and / or materials to EM radiation having wavelengths corresponding to the UV spectrum, such as UVA or UVB. In some non-limiting examples, the EM radiation for causing photoexcitation may have a wavelength of approximately 365 nm.

[0282] In some non-limiting examples, a patterning coating 130 composed of a material including but not limited to a patterning material 411 having substantially weak photoluminescence or absorption in at least one wavelength range of at least about 365 nm and about 460 nm may tend not to function as either a photoluminescent or absorbing coating and may be applicable in some scenarios requiring substantially high transparency in at least one of the visible and NIR spectra.

[0283] The typical wavelength of radiation sources used in fluorescence microscopy is approximately 365 nm. Therefore, the presence of materials, including but not limited to patterning materials 411, which have substantially weak or no photoluminescence or absorption at least at approximately 365 nm when deposited as thin films, may reduce applicability in some scenarios requiring typical optical detection techniques, including but not limited to fluorescence microscopy. This can impose constraints in some scenarios where material is selectively deposited on a portion of the substrate 10, for example, through a FMM, because there may be several scenarios in which the portion of the material present is determined following the deposition of the material.

[0284] In some non-limiting examples, the patterning material 411 does not have to substantially exhibit photoluminescence at any wavelength corresponding to the visible spectrum.

[0285] In some non-limiting examples, the patterning material 411 does not need to exhibit photoluminescence when exposed to EM radiation having at least one wavelength among at least about 300 nm, about 320 nm, about 350 nm, and about 365 nm or more.

[0286] In some non-limiting cases, the patterning material 411 may exhibit little and / or no detectable absorption when exposed to such EM radiation.

[0287] In some non-limiting examples, materials that exhibit substantially low photoluminescence or substantially no photoluminescence at wavelengths of at least about 365 nm and at least one of about 460 nm may be applicable in some scenarios where substantially high transparency in at least one of the visible spectrum and the NIR spectrum is required.

[0288] In some non-limiting examples, the patterning coating 130 is By including, but not limited to, materials that exhibit photoluminescence, photoluminescence may be exhibited at wavelengths corresponding to the UV spectrum and / or the visible spectrum. In some non-limiting examples, photoluminescence may be at wavelengths corresponding to the UV spectrum, including, but not limited to, UVA, which may correspond to wavelengths of about 315–400 nm, and UVB, which may correspond to wavelengths of about 280–315 nm. In some non-limiting examples, photoluminescence may be at wavelengths corresponding to the visible spectrum, which may correspond to wavelengths of about 380–740 nm. In some non-limiting examples, photoluminescence may be at wavelengths corresponding to deep B (blue).

[0289] In some non-limiting cases, the presence of such patterning films 130 may be detected and / or observed using routine characterization techniques such as fluorescence microscopy during the deposition of the patterning films 130.

[0290] Refractive index In some non-limiting examples, the patterning coating 130 and / or patterning material 411 may have a low refractive index when deposited in the form of a film and / or coating, and when deposited under similar circumstances for the deposition of the patterning coating 130 within the device 100.

[0291] In some non-limiting examples, the refractive index of the patterned coating 130 may be at least one of about 1.35, about 1.32, about 1.3, and about 1.25.

[0292] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, in some non-limiting examples, in the form of a film and / or coating, and when deposited under similar circumstances for the deposition of the patterning coating 130 within the device 100, may have a refractive index for EM radiation at a wavelength of 550 nm, which may be at least one of about 1.55 or less, about 1.5 or less, about 1.45 or less, about 1.43 or less, about 1.4 or less, about 1.39 or less, about 1.37 or less, about 1.35 or less, about 1.32 or less, and about 1.3 or less.

[0293] Examples As a non-limiting example, a series of samples were prepared to measure the refractive index at a wavelength of 550 nm of coatings formed from some of a variety of exemplary materials. The measurement results are summarized in Table 6.

[0294] [Table 6]

[0295] Based on the aforementioned measurements of refractive indices in Table 6 and previous observations regarding the presence or absence of a substantially closed coating 150 on the Ag-formed deposited material 531 in Table 2, it was found that materials forming a substantially low refractive index coating may, as a non-limiting example, be materials having a refractive index of at least one of about 1.4 or less or about 1.38 or less, and may be applicable in several scenarios where it is necessary to form a patterning coating 130 and substantially inhibit the deposition of a deposited material 531 containing at least one of Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg, on it.

[0296] Absorption coefficient In some non-limiting examples, the patterning coating 130 and / or patterning material 411, in some non-limiting examples, in the form of a film and / or coating, and when deposited under similar circumstances for the deposition of the patterning coating 130 within the device 100, may have an extinction coefficient that may be less than or equal to about 0.01 for EM radiation at wavelengths that are at least one of about 600 nm, about 500 nm, about 460 nm, about 420 nm, and about 410 nm.

[0297] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, when deposited in the form of a film and / or coating and under similar circumstances for the deposition of the patterning coating 130 within the device 100, may have an extinction coefficient of at least one of at least about 0.05, about 0.1, about 0.2, and about 0.5 for EM radiation at wavelengths of at least one of about 400 nm or less, about 390 nm or less, about 380 nm or less, and about 370 nm or less. Thus, the patterning coating 130 and / or patterning material 411, when deposited in the form of a film and / or coating and under similar circumstances for the deposition of the patterning coating 130 within the device 100, may absorb EM radiation in the UVA spectrum incident on the device 100, thereby reducing the possibility that EM radiation in the UVA spectrum may impose limitations with respect to device performance, device stability, device reliability, and / or device lifetime.

[0298] Absorption and other optical effects In some non-limiting examples, materials that have substantially low absorption or substantially no absorption at wavelengths of at least about 365 nm and at least one of about 460 nm may be applicable in some scenarios where substantially high transparency in at least one of the visible spectrum and the NIR spectrum is required.

[0299] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, when deposited as a film and / or a coating in some non-limiting example, and under similar circumstances for the deposition of the patterning coating 130 within the device 100, may not substantially attenuate EM radiation passing through it, at least in the visible spectrum.

[0300] In some non-limiting examples, the patterning coating 130 and / or patterning material 411, when deposited in the form of a film and / or coating and under similar circumstances for the deposition of the patterning coating 130 within the device 100, may not substantially attenuate EM radiation passing through it, at least in the IR spectrum and / or NIR spectrum.

[0301] In some non-limiting examples, the patterned coating 130 can function as an optical coating. In some non-limiting examples, the patterned coating 130 can modify at least one property and / or characteristic of the EM radiation emitted by the device 100. In some non-limiting examples, the patterned coating 130 can exhibit a certain degree of haze and scatter the emitted EM radiation. In some non-limiting examples, the patterned coating 130 may contain crystalline material to scatter the EM radiation that has passed through it. Such scattering of EM radiation can facilitate the enhancement of outcoupling of EM radiation from the device 100 in some non-limiting examples. In some non-limiting examples, the patterned coating 130 may initially be deposited as a substantially amorphous coating, including, but not limited to, substantially amorphous material, and thereafter, after its deposition, the patterned coating 130 may crystallize and subsequently serve as an optical coupling.

[0302] average layer thickness In some non-limiting examples, the average layer thickness of the patterned film 130 may be at least one of approximately 10 nm or less, approximately 8 nm or less, approximately 7 nm or less, approximately 6 nm or less, and approximately 5 nm or less.

[0303] weight In some non-limiting examples, the molecular weight of at least one compound of the patterning material 411 may be at least one of the following: about 6,000 g / mol or less, about 5,500 g / mol or less, about 5,000 g / mol or less, about 4,500 g / mol or less, about 4,300 g / mol or less, and about 4,000 g / mol or less.

[0304] In some non-limiting examples, the molecular weight of the compound of patterning material 411 may be at least one of about 1,000 g / mol, about 1,200 g / mol, about 1,300 g / mol, about 1,500 g / mol, about 1,700 g / mol, about 2,000 g / mol, about 2,200 g / mol, and about 2,500 g / mol.

[0305] composition In some non-limiting examples, the compound of patterning material 411 may be or may include an organic-inorganic hybrid material.

[0306] In some non-limiting examples, the patterning material 411 may be at least one of oligomers and polymers containing multiple monomers, or may include them.

[0307] Fluorine and silicon In some non-limiting examples, the patterning film 130 and / or the patterning material 411 may contain at least one of fluorine (F) atoms and / or silicon (Si) atoms. In some non-limiting examples, the patterning material 411 for forming the patterning film 130 may be a compound that contains at least one of F and Si.

[0308] In some non-limiting examples, the patterning material 411 may contain compounds containing F. In some non-limiting examples, the patterning material 411 may contain compounds that may contain F and carbon (C) atoms. In some non-limiting examples, the patterning material 411 may contain compounds that may contain F and C in atomic ratios corresponding to at least one quotient F / C among at least about 0.6, about 0.8, about 0.9, about 1, about 1.3, about 1.5, about 1.7, and about 2. In some non-limiting examples, the atomic ratio of F to C counts all F atoms present in the compound structure, and for C atoms, counts sp atoms present in the compound structure. 3This can be determined by counting only the hybridized carbon atoms. In some non-limiting examples, the patterning material 411 may include a compound that contains a portion of F and C as part of its molecular substructure in an atomic ratio corresponding to at least one of the quotients F / C among about 0.6 or more, about 0.8 or more, about 0.9 or more, about 1 or more, about 1.3 or more, about 1.5 or more, about 1.7 or more, and about 2 or more. In some non-limiting examples, the patterning material 411 may include a compound that contains a portion of F and C as part of its molecular substructure in an atomic ratio corresponding to at least one of the quotients F / C among about 3 or less, about 2.8 or less, about 2.5 or less, and about 2.3 or less.

[0309] In some non-limiting examples, the compound may be a fluoropolymer. In some non-limiting examples, the compound may be a block copolymer containing F.

[0310] In some non-limiting examples, the compound may be an oligomer. In some non-limiting examples, the oligomer may be a fluorooligomer. In some non-limiting examples, the compound may be a block oligomer containing F. Non-limiting examples of fluoropolymers are those having the molecular structures of EM-3, EM-5, EM-6, EM-7, and / or EM-9.

[0311] portion In some non-limiting examples, the patterning material 411 may include a compound having a molecular structure comprising multiple parts. In some non-limiting examples, a first part of the molecular structure of the patterning material 411 may be bonded to at least one second part of the molecular structure of the patterning material 411. In some non-limiting examples, a first part of the molecule of the patterning material 411 may be directly bonded to at least one second part of the molecule of the patterning material 411. In some non-limiting examples, the first and second parts may be bonded and / or joined to each other by a third part.

[0312] In some non-limiting examples, at least a portion of the molecular structure of patterning material 411 may be represented by formula (I), (Mon) n (I) In the formula, Mon represents a monomer, and n is an integer of at least 2.

[0313] In some non-restrictive examples, n can be at least one integer from approximately 2 to 100, approximately 2 to 50, approximately 3 to 20, approximately 3 to 15, approximately 3 to 10, approximately 3 to 7, and approximately 3 to 4. In some non-restrictive examples, the patterning material 411 may be an oligomer of formula (I), where n is at least one integer from approximately 2 to 20, approximately 2 to 15, approximately 2 to 10, approximately 3 to 8, and approximately 3 to 6.

[0314] In some non-limiting examples, a monomer may include a monomer skeleton and at least one functional group. In some non-limiting examples, the functional group may be bonded to the monomer skeleton directly or via a linker group. In some non-limiting examples, a monomer may include a linker group, which may be bonded to the monomer skeleton and the functional group. In some non-limiting examples, a monomer may include multiple functional groups, which may be the same or different from each other. In such examples, each functional group may be bonded to the monomer skeleton directly or via a linker group. In some non-limiting examples, if multiple functional groups are present, multiple linker groups may also be present.

[0315] In some non-limiting examples, the first part may include a monomer skeleton. In some non-limiting examples, the second part may include a functional group.

[0316] In some non-restrictive examples, the monomer skeleton may be an inorganic part, and at least one functional group may be an organic part.

[0317] In some non-limiting examples, the molecular structure of patterning material 411 may contain multiple different monomers. In some non-limiting examples, such molecular structure may contain monomer species having different molecular compositions and / or molecular structures.

[0318] In some non-limiting examples, the patterning material 411 may be a compound having a molecular structure comprising a skeleton and at least one functional group bonded to the skeleton, or may include such a compound. In some non-limiting examples, the skeleton may be an inorganic part and at least one functional group may be an organic part.

[0319] In some non-limiting examples, such compounds may have a molecular structure containing a siloxane group. In some non-limiting examples, the siloxane group may be linear, branched, or cyclic siloxane groups. In some non-limiting examples, the skeleton may be a siloxane group or may contain a siloxane group. In some non-limiting examples, the skeleton may be a siloxane group and at least one functional group containing fluorine, or may contain them. In some non-limiting examples, the at least one functional group containing fluorine may be a fluoroalkyl group. A non-limiting example of such a compound is fluorosiloxane.

[0320] In some non-limiting examples, the compound may have a molecular structure containing a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a polyhedral oligomeric silsesquioxane (POSS). In some non-limiting examples, the skeleton may be a silsesquioxane group or contain one. In some non-limiting examples, the skeleton may be a silsesquioxane group and at least one functional group containing F, or contain both. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. Non-limiting examples of such compounds include fluorosilsesquioxane and / or fluoro-POSS. An non-limiting example of such a compound is EM-8.

[0321] In some non-limiting examples, the compound may have a molecular structure comprising substituted or unsubstituted aryl groups and / or substituted or unsubstituted heteroaryl groups. In some non-limiting examples, the aryl group may be phenyl or naphthyl. In some non-limiting examples, at least one C atom of the aryl group may be substituted with a heteroatom (in non-limiting examples, this may be at least one of O, N, and S) to derive a heteroaryl group. In some non-limiting examples, the skeleton may be substituted or unsubstituted aryl groups and / or substituted or unsubstituted heteroaryl groups, or may contain them. In some non-limiting examples, the skeleton may be substituted or unsubstituted aryl groups and / or substituted or unsubstituted heteroaryl groups, and at least one functional group containing F, or may contain them. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group.

[0322] In some non-limiting examples, the compound may have a molecular structure comprising substituted or unsubstituted linear, branched, or cyclic hydrocarbon groups. In some non-limiting examples, one or more carbon atoms of the hydrocarbon group may be substituted by a heteroatom, which, in some non-limiting examples, may be at least one of oxygen, nitrogen, and sulfur.

[0323] In some non-limiting examples, the compound may have a molecular structure containing a phosphazene group. In some non-limiting examples, the phosphazene group may be linear, branched, or cyclic phosphazene groups. In some non-limiting examples, the skeleton may be or contain a phosphazene group. In some non-limiting examples, the skeleton may be or contain a phosphazene group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. A non-limiting example of such a compound is fluorophosphazene. Non-limiting examples of such compounds are EM-4, EM-10, EM-11, EM-12, EM-13, and EM-14.

[0324] In some non-limiting examples, the compound may be a metal complex. In some non-limiting examples, the metal complex may be an organometallic complex. In some non-limiting examples, the organometallic complex may contain fluorine (F). In some non-limiting examples, the organometallic complex may contain at least one ligand containing fluorine (F). In some non-limiting examples, at least one ligand containing fluorine may be a fluoroalkyl group or contain a fluoroalkyl group.

[0325] As will be understood by those skilled in the art, F, sp 2 carbon, sp 3 The presence of material in a coating that may contain at least one of carbon, aromatic hydrocarbon moieties, and / or other functional groups or moieties can be detected using a variety of methods known in the art, including, but not limited to, X-ray photoelectron spectroscopy (XPS).

[0326] In some non-limiting examples, the monomer may contain at least one of the CF2 and CF2H moieties. In some non-limiting examples, the monomer may contain at least one of the CF2 and CF3 moieties. In some non-limiting examples, the monomer may contain a CH2CF3 moiety. In some non-limiting examples, the monomer may contain at least one of C and O. In some non-limiting examples, the monomer may contain a fluorocarbon monomer. In some non-limiting examples, the monomer may contain at least one of the vinyl fluoride moiety, vinylidene fluoride moiety, tetrafluoroethylene moiety, chlorotrifluoroethylene moiety, hexafluoropropylene moiety, or fluorinated 1,3-dioxole moiety.

[0327] In some non-limiting examples, the first part may include at least one of an aryl group, a heteroaryl group, a conjugated bond, and a phosphazene group.

[0328] In some non-limiting examples, the first part may include at least one of the following: a cyclic structure, a cyclic aromatic structure, an aromatic structure, a cage structure, a polyhedral structure, and a bridged structure.

[0329] In some non-restrictive examples, the first part may include a rigid structure.

[0330] In some non-limiting examples, the first part may include at least one of the benzene, naphthalene, pyrene, and anthracene moieties.

[0331] In some non-limiting examples, the first part may include at least one of the cyclotriphosphazene moiety and the cyclotetraphosphazene moiety.

[0332] In some non-restrictive cases, the first part may be a hydrophilic part.

[0333] In some non-limiting examples, the second part may include at least one of F and Si. In some non-limiting examples, the second part may include at least one of substituted fluoroalkyl groups and unsubstituted fluoroalkyl groups. In some non-limiting examples, the second part may include C1-C 12 Linear fluorinated alkyl, C1-C 12 Linear fluorinated alkoxy, C3~C 12 Branched fluorinated cyclic alkyl, C3~C 12 Fluorinated cyclic alkyls, and C3-C 12 It may contain at least one of the fluorinated cyclic alkoxy compounds.

[0334] In some non-restrictive examples, the second part may include saturated hydrocarbon groups, and the presence of any unsaturated hydrocarbon groups may be substantially omitted.

[0335] While we do not wish to be bound by any particular theory, it can be hypothesized that the presence of at least one saturated hydrocarbon group in the second part may facilitate the orientation of the second part such that its terminal group is close to the exposed layer surface 11 of the patterning film 130, due to the low rigidity of saturated hydrocarbon groups. In some non-limiting examples, it can be hypothesized that the presence of an unsaturated hydrocarbon group may inhibit the molecule from adopting such an orientation.

[0336] In some non-limiting examples, patterned material 411 has all F atoms sp 3 This may include compounds bonded to carbon atoms. In some non-limiting examples, the F to C atomic ratio counts all F atoms present in the compound structure, and for C atoms, it counts all sp atoms present in the compound structure. 3 This can be determined by counting only the hybridized carbon atoms. In some non-limiting examples, the patterning material 411 may include a compound in which a second part or part thereof may contain a portion containing F and C in atomic ratios corresponding to at least about 1.5, about 1.7, about 2, about 2.1, about 2.3, and 2.5 F / C quotients.

[0337] In some non-restrictive examples, the second part may include a siloxane group.

[0338] In some non-limiting examples, each of the multiple second parts may include a proximal group bonded to at least one of the first and third parts, and a terminal group located distal to the proximal group.

[0339] In some non-limiting examples, the terminal group may include a CF2H group. In some non-limiting examples, the terminal group may include a CF3 group. In some non-limiting examples, the terminal group may include a CH2CF3 group.

[0340] In some non-limiting examples, each of the multiple second parts may contain at least one of a linear fluoroalkyl group and a linear fluoroalkoxy group.

[0341] In some non-limiting examples, at least one second part may include a hydrophobic portion.

[0342] In some non-limiting examples, the third part may include a linker group. In some non-limiting examples, the third part may be at least one of a single bond, O, N, NH, C, CH, CH2, and S.

[0343] In some non-limiting examples, the patterning material 411 may include a cyclophosphazene derivative represented by at least one of formulas (C-2) and (C-3).

[0344] [Table 7] During the ceremony, Each R independently represents and / or includes the second part.

[0345] In some non-limiting examples, R may include fluoroalkyl groups. In some non-limiting examples, fluoroalkyl groups may be C1-C1 18 It may be a fluoroalkyl group. In some non-limiting examples, a fluoroalkyl group may be represented by formula (II),

[0346] [ka] During the ceremony, t represents an integer between 1 and 3. u represents an integer between 5 and 12. Z represents at least one of H, deuteron (D), and F.

[0347] In some non-restrictive examples, R may include a terminal group, which is located distal to the corresponding P atom to which R is bonded.

[0348] In some non-limiting examples, R may include a third part bonded to a second part. In some non-limiting examples, each third part of R may be bonded to the corresponding P atom in at least one of formulas (C-2) and (C-3).

[0349] In some non-restrictive examples, the third part is an oxygen atom.

[0350] In some non-restrictive examples, the first part may be separated from the second part.

[0351] In some non-limiting examples, at least one molecular structure of the material of the patterning film 130, which may be the first material and / or the second material, may contain multiple different monomers. In some non-limiting examples, such molecular structure may contain monomer species having different molecular compositions and / or molecular structures. Examples of such non-limiting molecular structures include those represented by formulas (III) and (IV), (Mon A ) k (Mon B ) m (III) (Mon A ) k (Mon A ) m (Mon C ) o (IV) During the ceremony, Mon A Mon B , and Mon C Each represents a monomer species, k, m, and o each represent an integer of at least 2.

[0352] In some non-limiting examples, k, m, and o represent at least one integer from about 2 to 100, about 2 to 50, about 3 to 20, about 3 to 15, about 3 to 10, or about 3 to 7, respectively. Those skilled in the art will see that various non-limiting examples and descriptions relating to the monomer Mon are related to Mon. A Mon B , and Mon CYou will understand that this may be applicable to each of them.

[0353] In some non-restrictive examples, a monomer may be represented by formula (V), M-(LR x ) y (V) During the ceremony, M represents the monomer skeleton unit. L represents the linker group, R represents a functional group. x is an integer between 1 and 4. y is an integer between 1 and 3.

[0354] In some non-restrictive examples, the linker group can be represented by a single bond, or at least one of O, N, NH, C, CH, CH2, and S. In some non-restrictive examples, the linker group can be omitted so that the functional group is directly bonded to the monomer skeleton.

[0355] Various non-limiting examples of functional groups described herein can be applied with respect to R of formula (V). In some non-limiting examples, the functional group R may include an oligomer unit, which may further include a plurality of functional group monomer units. In some non-limiting examples, the functional group monomer unit may be at least one of CH2 and CF2. In some non-limiting examples, the functional group may include a CH2CF3 portion. In some non-limiting examples, such functional group monomer units may be bonded together to form at least one of alkyl or fluoroalkyl oligomer units. In some non-limiting examples, the oligomer unit may further include a functional group terminal unit. In some non-limiting examples, the functional group terminal unit may be located at the end of the oligomer unit and bonded to the functional group monomer unit. In some non-limiting examples, the end to which the functional group terminal unit may be located may correspond to a portion of the functional group that may be distal to the monomer backbone unit. In some non-limiting examples, the functional group terminal unit may include at least one of CF2H and CF3.

[0356] In some non-limiting examples, a monomer skeleton unit M may have high surface tension. In some non-limiting examples, a monomer skeleton unit may have substantially at least the same surface tension as at least one of the functional groups R to which it is bonded. In some non-limiting examples, a monomer skeleton unit may have substantially at least the same surface tension as any functional group R to which it is bonded.

[0357] In some non-limiting examples, the monomer backbone unit may contain phosphorus (P) and nitrogen (N), including but not limited to phosphazenes, with a double bond between P and N, and may be represented as "NP" or "N=P". In some non-limiting examples, the monomer backbone unit may, as a non-limiting example, SiO 3 / 2 It may contain Si and O, including but not limited to a siloxane (Si-O-Si) moiety that can form part of a silsesquioxane that can be represented as such.

[0358] In some non-limiting examples, for example, at least a portion of the molecular structure of at least one of the materials of the patterning coating 130, which may be the first material and / or the second material, may be represented by formula (VI). (NP-(LR x ) y ) n (VI) During the ceremony, NP represents the phosphazene monomer skeleton unit, L represents the linker group, R represents a functional group. x is an integer between 1 and 4. y is an integer between 1 and 3. n is an integer of at least 2.

[0359] In some non-limiting examples, the molecular structure of the first material and / or the second material can be represented by formula (VI). In some non-limiting examples, at least one of the first material and the second material can be a cyclophosphazene. In some non-limiting examples, the molecular structure of a cyclophosphazene can be represented by formula (VI).

[0360] In some non-limiting examples, L may represent oxygen, x may be 1, and R may represent a fluoroalkyl group. In some non-limiting examples, for example, at least part of the molecular structure of at least one material of the patterning coating 130, which may be the first material and / or the second material, may be represented by formula (VII). (NP(OR f )2) n (VII) During the ceremony, R f This represents a fluoroalkyl group, n is an integer between 3 and 7.

[0361] In some non-limiting examples, the fluoroalkyl group may include at least one of the following: CF2, CF2H, CH2CF3, and CF3. In some non-limiting examples, the fluoroalkyl group may be represented by formula (VIII),

[0362] [ka] During the ceremony, p is an integer between 1 and 5. q is an integer between 3 and 20. Z represents hydrogen or fluorine.

[0363] In some non-restrictive examples, p may be 1, and q may be an integer between 6 and 20.

[0364] In some non-limiting examples, the fluoroalkyl group R in formula (VII) f This can be expressed by equation (VIII).

[0365] In some non-limiting examples, for example, at least a portion of the molecular structure of at least one of the materials of the patterning coating 130, which may be the first material and / or the second material, may be represented by formula (IX). (SiO3 / 2 -(LR)) n (IX) During the ceremony, L represents the linker group, R represents a functional group. n is an integer between 6 and 12.

[0366] In some non-limiting embodiments, L may represent the presence of at least one of a single bond, O, a substituted alkyl, or an unsubstituted alkyl. In some non-limiting examples, n may be 8, 10, or 12. In some non-limiting examples, R may include a functional group having low surface tension. In some non-limiting examples, R may include at least one of an F-containing group and a Si-containing group. In some non-limiting examples, R may include at least one of a fluorocarbon group and a siloxane-containing group. In some non-limiting examples, R may include at least one of a CF2 group and a CF2H group. In some non-limiting examples, R may include at least one of a CF2 and a CF3 group. In some non-limiting examples, R may include a CH2CF3 group. In some non-limiting examples, the material represented by formula (IX) may be POSS.

[0367] In some non-limiting examples, for example, at least a portion of the molecular structure of at least one of the materials of the patterning coating 130, which may be the first material and / or the second material, may be represented by formula (X). (SiO 3 / 2 -R f ) n (X) During the ceremony, n is an integer between 6 and 12. R f This represents a fluoroalkyl group.

[0368] In some non-restrictive cases, n may be 8, 10, or 12. In some non-restrictive cases, R f It may contain functional groups having low surface tension. In some non-limiting examples, R fThis may include at least one of the CF2 portion and the CF2H portion. In some non-restrictive examples, R f This may include at least one of the CF2 portion and the CF3 portion. In some non-restrictive examples, R f This may include the CH2CF3 portion. In some non-restrictive examples, the material represented by formula (X) may be POSS.

[0369] In some non-limiting examples, the fluoroalkyl group R in formula (X) f This can be expressed by equation (VIII).

[0370] In some non-limiting examples, for example, at least a portion of the molecular structure of at least one of the materials of the patterning coating 130, which may be the first material and / or the second material, may be represented by formula (XI). (SiO 3 / 2 -(CH2) x (CF3)) n (XI) During the ceremony, x is an integer between 1 and 5. n is an integer between 6 and 12.

[0371] In some non-restrictive examples, n may be 8, 10, or 12.

[0372] In some non-restrictive examples, the compound represented by formula (XI) may be a POSS.

[0373] In some non-limiting examples, the functional group R and / or fluoroalkyl group R f The group may be independently selected at each occurrence of such a group in any of the aforementioned formulas. It will also be understood that any of the aforementioned formulas may represent a substructure of a compound, and that additional groups or parts not explicitly shown in the above formulas may exist. It will also be understood that the various formulas provided in this application may represent linear, branched, cyclic, cyclic-linear, and / or crosslinked structures.

[0374] Interrelationships between patterning coating attributes Initial adhesion probability and transmittance It can be assumed that an exposed layer surface 11 exhibiting a low initial adhesion probability to a deposited material 531 containing Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg, may exhibit high transmittance. On the other hand, an exposed layer surface 11 exhibiting a high adhesion probability to a deposited material 531 containing Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg, may exhibit low transmittance.

[0375] Initial attachment probability and sedimentation contrast In some non-limiting examples, materials including but not limited to patterning materials 411 may have substantially low deposition contrast if the initial adhesion probability of such materials to deposition of deposition materials 531 including but not limited to metals / alloys containing at least one of Ag-containing materials including but not limited to Yb, Ag, Mg, and MgAg is substantially high.

[0376] Initial adhesion probability and surface energy In some non-limiting examples, materials including but not limited to patterning material 411 may have a substantially high initial adhesion probability for deposition of depositing materials including but not limited to metals / alloys containing at least one of Ag-containing materials including but not limited to Yb, Ag, Mg, and MgAg, provided the material has substantially high surface energy.

[0377] Transmittance and refractive index While we do not wish to be bound by any particular theory, it has been observed that providing a patterned coating 130 with a substantially low refractive index can increase the transmittance of external EM radiation through its second portion 102 in at least some devices 100. As a non-limiting example, a device 100 containing an air gap, which may be placed near or adjacent to the patterned coating 130, may exhibit substantially higher transmittance compared to a similarly configured device 100 in which such a low refractive index patterned coating 130 is not provided, when the patterned coating 130 has a substantially low refractive index.

[0378] Surface energy and melting point In some non-limiting cases, a patterned coating 130 having substantially low surface energy and substantially high melting point may be applicable in some scenarios requiring high temperature reliability. Considering that in some non-limiting cases a single material with low surface energy may tend to exhibit a low melting point, in some non-limiting cases, there may be challenges in achieving such a combination from a single material.

[0379] In some non-limiting examples, patterning materials 411 having substantially low surface tensions, but not excessively low, may be applicable in some scenarios requiring substantially high melting points, including but not limited to about 15–22 dynes / cm.

[0380] While not bound by any particular theory, in some non-limiting examples, it can be assumed that a material forming an exposed layer surface 11 having a surface energy of at least one of approximately 13 dynes / cm or less, approximately 14 dynes / cm or less, and approximately 15 dynes / cm or less may have reduced applicability as a patterning material 411 in certain scenarios because such a material may exhibit substantially low adhesion to the surrounding layer, substantially low melting point, and / or substantially low sublimation temperature.

[0381] Surface energy and sublimation temperature In some non-limiting examples, patterning materials 411 having substantially low but not excessively low surface tensions may be applicable in some scenarios requiring substantially high sublimation temperatures, including but not limited to about 15–22 dynes / cm.

[0382] In some non-limiting examples, a patterning coating 130 composed of a material including but not limited to a patterning material 411 having substantially low surface energy and substantially high sublimation temperature may have applications in some scenarios where substantially high precision is required in controlling the average layer thickness of a film containing such material.

[0383] While not bound by any particular theory, in some non-limiting examples, it can be assumed that a material forming an exposed layer surface 11 having a surface energy of at least one of approximately 13 dynes / cm or less, approximately 14 dynes / cm or less, and approximately 15 dynes / cm or less may have reduced applicability as a patterning material 411 in certain scenarios because such a material may exhibit substantially low adhesion to the surrounding layer, substantially low melting point, and / or substantially low sublimation temperature.

[0384] Without being bound by any particular theory, as an unrestricted example, it can be assumed that materials forming surfaces having surface energies lower than at least one of about 13 dynes / cm, about 15 dynes / cm, and about 17 dynes / cm may be suitably reduced as patterning materials 411 in certain unrestricted examples because such materials may exhibit relatively low adhesion to surrounding layers, relatively low cohesive strength, low melting point, and / or low sublimation temperature.

[0385] Surface energy and cohesive energy In some non-limiting examples, materials including but not limited to patterning materials 411 having substantially low surface energy and substantially high cohesive energy may be applicable in some scenarios requiring substantially high reliability under at least one of shear stress and bending stress. In some non-limiting examples, considering that a thin film substantially formed from a single material having substantially low surface energy may tend to exhibit substantially low cohesive energy, challenges may exist in achieving such a combination from a single material in some non-limiting examples.

[0386] Surface energy, melting point, and cohesive energy In some non-limiting examples, patterned coatings 130 having substantially low surface energy, substantially high melting point, and substantially high cohesive energy may be applicable in some scenarios requiring substantially high reliability under various conditions. Considering that in some non-limiting examples, thin films substantially formed from a single material having substantially low surface energy may tend to exhibit substantially low cohesive energy and substantially low melting point, in some non-limiting examples, challenges may exist in achieving such a combination from a single material.

[0387] Surface energy, melting point, sublimation temperature, and cohesive energy Without being bound by any particular theory, as an unrestricted example, it can be assumed that materials forming surfaces having surface energies lower than at least one of about 13 dynes / cm, about 15 dynes / cm, and about 17 dynes / cm may be suitably reduced as patterning materials 411 in certain unrestricted examples because such materials may exhibit relatively low adhesion to surrounding layers, relatively low cohesive strength, low melting point, and / or low sublimation temperature.

[0388] Surface energy and optical gap In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially low surface energy may tend to exhibit substantially large or wide optical gaps.

[0389] Surface energy and photoluminescence In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially low surface energy may be applicable in some scenarios where weak photoluminescence or absorption is required, or substantially not required, in the wavelength range of at least about 365 nm and at least one of about 460 nm.

[0390] Surface energy, melting point, sublimation temperature, and molecular weight While not bound by any particular theory, it has been observed that compounds with substantially low surface energies and molecular weights of approximately 1,000 g / mol or less may exhibit at least one of the following properties: (i) a low sublimation temperature including but not limited to approximately 100°C or less, and (ii) a substantially low melting point including but not limited to at least one of approximately 100°C or less and approximately 80°C or less. As a result, such compounds may have reduced applicability in certain scenarios.

[0391] Surface energy, melting point, and cohesive energy In some non-limiting examples, materials including, but not limited to, a patterning material 411 having substantially low surface energy may tend to exhibit substantially low intermolecular forces, which may increase the likelihood that the patterning material 411 has at least one of substantially low melting point, cohesive strength, and adhesive strength relative to adjacent layers.

[0392] Surface energy and molecular weight (and melting point) While we do not wish to be bound by any particular theory, we can assume that for compounds adapted to form surfaces with substantially low surface energy, there may be scenarios in which, in at least some applications, the molecular weight of such compounds needs to be at least one of the following: approximately 1,200–6,000 g / mol, approximately 1,500–5,500 g / mol, approximately 1,500–5,000 g / mol, approximately 2,000–4,500 g / mol, approximately 2,300–4,300 g / mol, approximately 2,500–4,000 g / mol, approximately 1,500–4,500 g / mol, approximately 1,700–4,500 g / mol, approximately 2,000–4,000 g / mol, approximately 2,200–4,000 g / mol, and approximately 2,500–3,800 g / mol.

[0393] While we do not wish to be bound by any particular theory, we can assume that such compounds may exhibit (i) a substantially high melting point of at least 100°C as an unrestricted example, (ii) a substantially low surface energy, and (iii) a substantially amorphous structure as an unrestricted example, which may be applicable in some scenarios for forming coatings and / or layers having at least one substantially amorphous structure when deposited using a vacuum-based thermal deposition process.

[0394] Surface energy and composition The surface tension resulting from a part of a molecular structure, including but not limited to a first part, a second part, a monomer, a monomer backbone unit, a linker group, or a functional group, can be determined using various methods known in the art. Non-limiting examples of such methods include the use of Parachor, as further described in "Conception and Significance of the Parachor," Nature 196:890-891. In some non-limiting examples, such methods may include determining the critical surface tension of a part according to formula (1):

[0395]

number

[0396] In some non-limiting examples, a monomer skeleton unit may have a higher surface tension than at least one of the functional groups to which it is bonded.

[0397] In some non-limiting examples, a monomer skeleton unit may have at least one surface tension of at least about 25 dynes / cm, about 30 dynes / cm, about 40 dynes / cm, about 50 dynes / cm, about 75 dynes / cm, about 100 dynes / cm, about 150 dynes / cm, about 200 dynes / cm, about 250 dynes / cm, about 500 dynes / cm, about 1,000 dynes / cm, about 1,500 dynes / cm, and about 2,000 dynes / cm.

[0398] In some non-limiting examples, at least one functional group of the monomer may have at least one surface tension of about 25 dynes / cm or less, about 21 dynes / cm or less, about 20 dynes / cm or less, about 19 dynes / cm or less, about 18 dynes / cm or less, about 17 dynes / cm or less, about 16 dynes / cm or less, about 15 dynes / cm or less, about 14 dynes / cm or less, about 13 dynes / cm or less, about 12 dynes / cm or less, about 11 dynes / cm or less, and about 10 dynes / cm or less.

[0399] In some non-limiting examples, the first part of the molecule of the patterning material 411 may have a critical surface tension higher than the critical surface tension of the second part, and may be bonded to the second part, such that the first part may contain a (higher) critical surface tension component and the second part may contain a (lower) critical surface tension component.

[0400] In some non-limiting examples, the quotient obtained by dividing the critical surface tension of the first part by the critical surface tension of the second part may be at least one of about 5, about 7, about 8, about 9, about 10, about 12, about 15, about 18, about 20, about 30, about 50, about 60, about 80, and about 100.

[0401] In some non-limiting examples, the critical surface tension of the first part may be at least about 50 dynes / cm, about 70 dynes / cm, about 80 dynes / cm, about 100 dynes / cm, about 150 dynes / cm, about 200 dynes / cm, about 250 dynes / cm, about 300 dynes / cm, about 350 dynes / cm, and about 500 dynes / cm higher than the critical surface tension of at least one second part.

[0402] In some non-limiting examples, the critical surface tension of the first portion may be at least one of about 50 dynes / cm, about 70 dynes / cm, about 80 dynes / cm, about 100 dynes / cm, about 150 dynes / cm, about 180 dynes / cm, about 200 dynes / cm, about 250 dynes / cm, and about 300 dynes / cm.

[0403] In some non-limiting examples, the critical surface tension of the second part may be at least one of the following: about 25 dynes / cm or less, about 21 dynes / cm or less, about 20 dynes / cm or less, about 19 dynes / cm or less, about 18 dynes / cm or less, about 17 dynes / cm or less, about 16 dynes / cm or less, about 15 dynes / cm or less, about 14 dynes / cm or less, 13 dynes / cm or less, 12 dynes / cm or less, 11 dynes / cm or less, and 10 dynes / cm or less.

[0404] Optical gap and photoluminescence In some non-limiting examples, materials with a relatively large HOMO-LUMO gap may be applicable in some scenarios where weak photoluminescence or absorption is required, or substantially not required, in at least one wavelength range of about 365 nm and about 460 nm.

[0405] Molecular weight and composition In some non-limiting examples, the proportion of the molar weight of such a compound that may be due to the presence of the F atom may be at least one of approximately 40–90%, approximately 45–85%, approximately 50–80%, approximately 55–75%, and approximately 60–75%. In some non-limiting examples, the F atom may constitute the majority of the molar weight of such a compound.

[0406] In some non-limiting examples, the molecular weight resulting from the first part may be at least one of about 50 g / mol, about 60 g / mol, about 70 g / mol, about 80 g / mol, about 100 g / mol, about 120 g / mol, about 150 g / mol, and about 200 g / mol.

[0407] In some non-limiting examples, the molecular weight attributable to the first part may be at least one of the following: approximately 500 g / mol or less, approximately 400 g / mol or less, approximately 350 g / mol or less, approximately 300 g / mol or less, approximately 250 g / mol or less, approximately 200 g / mol or less, approximately 180 g / mol or less, and approximately 150 g / mol or less.

[0408] In some non-limiting examples, the sum of the molecular weights of each of at least one second part in the compound structure may be at least one of about 1,200 g / mol, about 1,500 g / mol, about 1,700 g / mol, about 2,000 g / mol, about 2,500 g / mol, and about 3,000 g / mol.

[0409] Multiple patterning materials In some non-limiting examples, forming a patterned coating 130 of a single patterned material 411 onto a deposited material 531 containing a given metal / alloy containing at least one of Yb, Ag, Mg, and MgAg, which satisfies constraints of at least one material property selected from at least one of the following: initial adhesion probability, transmittance, deposition contrast, surface energy, glass transition temperature, melting point, sublimation temperature, evaporation temperature, cohesive energy, optical gap, photoluminescence, refractive index, extinction coefficient, absorption or other optical effects, average layer thickness, molecular weight, and composition, can be challenging for a given scenario, given the relatively complex interrelationships between various material properties.

[0410] In some non-limiting examples, the patterning coating 130 may include multiple patterning materials 411.

[0411] In some non-limiting examples, at least one of the multiple patterning materials 411 may serve as a NIC when deposited as a thin film. In some non-limiting examples, two or more of the multiple patterning materials 411 may function as a NIC when deposited as a thin film. In some non-limiting examples, at least one of the multiple patterning materials 411 may not function as a NIC. In some non-limiting examples, at least one of the multiple patterning materials 411 that does not function as a NIC may form an NPC 720 when deposited as a thin film.

[0412] In some non-limiting examples, the patterning coating 130 may include a first material and a second material.

[0413] In some non-limiting examples, at least one of the first and second materials may include molecules having at least one of a cage structure, a cyclic structure, and an organic-inorganic hybrid structure.

[0414] In some non-restrictive cases, the host may contain fully condensed oligomers. In other words, the molecular structure of the host may contain no uncondensed or partially condensed portions at all.

[0415] In some non-limiting examples, the first material may form NPC720 when deposited as a thin film, and the second material may form NIC when deposited as a thin film.

[0416] In some non-limiting examples, by employing multiple patterning materials 411, each satisfying a different combination of constraints for at least one material property, it is possible to easily achieve a desired combination of properties for the patterning coating 130, including but not limited to at least one of the following: • High pattern contrast, • Low tendency to crystallize into thin film form. • Low risk of cohesive failure and / or delamination in thin film form. • A patterned coating 130 that exhibits a photoluminescence response, and Formation of at least one particle structure 160 on the exposed layer surface 11 of the patterned coating 130.

[0417] Host and Dopant In some non-limiting cases, the first material may be a host material (host). In some non-limiting cases, the second material may be a dopant material (dopant).

[0418] As used herein, the term "host," including but not limited to its use in relation to the patterning coating 130, can generally refer to material components that may constitute the majority of the entire patterning coating 130. In some non-limiting examples, the host may comprise at least one of at least about 99%, about 95%, about 90%, about 80%, about 70%, and about 50% of the entire patterning coating 130, including but not limited to measurements by weight and volume. In some non-limiting examples, the patterning coating 130 may comprise at least three materials that are different from each other. In such non-limiting examples, the material that constitutes the largest portion of the patterning coating, by at least one of weight and volume, may be considered the host. In some non-limiting examples, the patterning coating 130 may contain two or more hosts.

[0419] As used herein, a dopant, including but not limited to its use in connection with a patterning coating 130, can generally refer to a material component that may constitute less than a majority of the entire material. In some non-limiting examples, a dopant may include, but not limited to, at least one of the following amounts: about 1% or less, about 5% or less, about 10% or less, about 20% or less, about 30% or less, and about 50% or less of the entire material, including but not limited to measurements by weight and volume.

[0420] In some non-limiting examples, the characteristic surface energy of the host may be substantially at least the characteristic surface energy of the dopant. In some non-limiting examples, each of the host and the dopant may have a characteristic surface energy between about 5 and 25 dynes / cm.

[0421] In some non-limiting examples, at least one of the host and dopant may be adapted to form a surface with low surface energy when deposited as a thin film.

[0422] In some non-limiting examples, the melting point of the host may be substantially at least the melting point of the dopant. In some non-limiting examples, each of the host and the dopant may have at least one melting point among at least about 100°C, about 110°C, about 120°C, and about 130°C.

[0423] In some non-limiting examples, at least one of the host and the dopant may be an oligomer.

[0424] In some non-limiting examples, at least one combination of at least one material property and at least one value of at least one material property may differ between the dopant and the host. In some non-limiting examples, at least one combination of at least one material property and at least one value of at least one material property may differ between the patterning coating 130 and either or both the host and the dopant.

[0425] In some non-limiting examples, the patterning coating 130 containing the host and dopant can be classified into one of several categories, including but not limited to the following: In Category 1, the host and dopant are characterized by at least one substantially similar material property, including but not limited to initial adhesion probability, transmittance, deposition contrast, surface energy, glass transition temperature, melting point, sublimation temperature, evaporation temperature, cohesive energy, optical gap, photoluminescence, refractive index, extinction coefficient, absorption or other optical effects, average layer thickness, molecular weight, and composition. In Category 2, the host and dopant are characterized by at least one substantially different material property, including but not limited to initial adhesion probability, transmittance, deposition contrast, surface energy, glass dislocation temperature, melting point, sublimation temperature, evaporation temperature, cohesive energy, optical gap, photoluminescence, refractive index, extinction coefficient, absorption or other optical effects, average layer thickness, molecular weight, and composition. In Category 3, the dopant exhibits a photoluminescent response. In Category 4, a dopant is introduced to create at least one heterogeneity, facilitating the formation of at least one particle structure 160 on top of it.

[0426] Those skilled in the art will understand that, in some non-limiting examples, there may be certain combinations of hosts and dopants that could fall into multiple such categories.

[0427] Those skilled in the art will understand that the similarity of at least one material property between the host and the dopant may include, but is not limited to, equivalence of values ​​and / or within a range of values, or similarity and / or proximity.

[0428] In some non-limiting examples, the range of values ​​for which the material properties of both the host and the dopant exhibit similarity may vary depending on the context, including but not limited to the material properties to which the range applies, the type and number of at least one material property other than the material properties to which the range applies, and / or the similarity and / or dissimilarity, as well as the application to which the patterning coating 130 is applied.

[0429] Those skilled in the art will understand that the dissimilarity of at least one material property between the host and the dopant may include, but is not limited to, a difference of a certain value and / or at least a range of values.

[0430] In some non-limiting examples, the range of values ​​in which the host and dopant material properties differ and exhibit dissimilarity may vary depending on the context, including but not limited to the material properties to which the range applies, the type and number of at least one material property other than the material properties to which the range applies, and / or the similarity and / or dissimilarity, as well as the application to which the patterning coating 130 is applied.

[0431] In some non-limiting examples, the host may be a non-polymeric material. In some non-limiting examples, it has been found that using a polymer as a host may reduce applicability in at least certain scenarios. While we do not wish to be bound by any particular theory, it can be assumed that polymers, having a relatively low free volume, including but not limited to when compared to oligomers and small molecules, may generally have low applicability as a host in the patterning film 130 in at least some scenarios. The low free volume of polymers may impose constraints on the material of the patterning film 130, which may take a configuration that provides a patterning film 130 exhibiting at least one of substantially low surface energy and substantially high cohesive energy. Polymers may also reduce applicability in at least some scenarios, as they typically exhibit substantially low solubility in common solvents and tend not to sublimate under typical conditions used in manufacturing processes, including but not limited to vacuum-based deposition processes for semiconductor devices, including but not limited to OLEDs.

[0432] In some non-limiting examples, the host is a hydrophilic material. In some non-limiting examples, the host, in some non-limiting examples, in the form of a film and / or coating, and when deposited under similar circumstances for the deposition of a patterning coating 130 within device 100, may have at least one contact angle of about 15° or less, about 10° or less, about 8° or less, and about 5° or less with respect to a polar solvent, including but not limited to water. While we do not wish to be bound by any particular theory, it is assumed that hydrophilic hosts may be desirable for use in at least some applications.

[0433] Deposition of patterning coating In some non-limiting examples, the patterning film 130 may be deposited on a first portion 101 of the exposed layer surface 11 of a substrate by providing a mixture comprising multiple materials and depositing such mixture thereon to form the patterning film 130 thereon. In some non-limiting examples, the mixture may comprise a host and a dopant. In some non-limiting examples, the host and dopant may be deposited on the first portion 101 of the exposed layer surface 11 of a substrate to form the patterning film 130 thereon.

[0434] In some non-limiting examples, the mixture may be deposited on a first portion 101 of the exposed layer surface 11 of the substrate by a PVD process. In some non-limiting examples, the patterning film may be formed by evaporating the mixture from a common evaporation source and depositing the mixture on a first portion 101 of the exposed layer surface 11 of the substrate.

[0435] In some non-limiting examples, a mixture containing, but not limited to, a host and a dopant may be placed in a common crucible or evaporation source that is heated under vacuum until it reaches or exceeds its evaporation temperature, and the vapor flux generated therefrom may be directed to the exposed layer surface 11 of the substrate in the first portion 101, causing the deposition of a patterning film 130 on and within it.

[0436] In some non-limiting examples, the patterning coating 130 may be deposited by co-deposition of the host and dopant. In some non-limiting examples, the host can be evaporated from a first crucible or evaporation source and the dopant from a second crucible or evaporation source so that the mixture is formed in the gas phase and co-deposited on the exposed layer surface 11 of the underlayment in the first portion 101 to provide the patterning coating 130 thereon.

[0437] In some non-limiting examples, the patterning film 130 may be deposited on the exposed layer surface 11 of the substrate surface by providing a single patterning material 411 (supply patterning material) containing, but not limited to, one of a host and a dopant, prior to its deposition. In some non-limiting examples, after providing the supply patterning material, a generated patterning material containing, but not limited to, the other of a host and a dopant, may be generated by processing the supply patterning material. In some non-limiting examples, after generating the generated patterning material from the deposited patterning material 411, the supply patterning material and the generated patterning material may be deposited on the exposed layer surface 11 of the substrate surface to form the patterning film 130.

[0438] In some non-limiting examples, the second material may be produced from the first material by heating the first material. In some non-limiting examples, heating the first material in an environment including but not limited to a vacuum and / or other environments may cause a portion of the first material to undergo a chemical reaction, resulting in the formation of the second material.

[0439] In some non-limiting examples, the second material can be produced in situ by heating the first material in a vacuum and then depositing a host and dopant by a PVD process to form a patterned coating 130 on the exposed layer surface 11 of the substrate surface.

[0440] In some non-limiting examples, such a vacuum may not need to be interrupted between the generation of the second material and the deposition of the patterning film 130.

[0441] In some non-limiting examples, the patterning coating 130 may include a third material. In some non-limiting examples, such a third material may be produced by processing at least one of a host and a dopant.

[0442] Category 1: Host and Dopant are similar. While we do not wish to be bound by any particular theory, we can assume that creating a patterned film 130 from a host and dopant with similar material properties may be applicable in some scenarios, since in some non-limiting examples the host and dopant are likely to be miscible with each other and unlikely to separate into different phases. In some non-limiting examples this may be applicable in scenarios where the patterned film 130 needs to resist crystallization, in that the material properties of the dopant may tend to disrupt the formation of a crystal structure in the host.

[0443] In some non-limiting examples, the similar material properties of both the host and the dopant may include, but are not limited to, at least one of the following: surface energy, melting point, sublimation temperature, refractive index, molecular weight, and some of the composition of the molecular structures of the host and the dopant.

[0444] Sedimentary contrast In some non-limiting cases, the host may exhibit substantially high depositional contrast.

[0445] In some non-limiting cases, dopants can exhibit substantially high depositional contrast.

[0446] In some non-limiting cases, dopants may exhibit substantially low depositional contrast.

[0447] Surface energy In some non-limiting examples, the characteristic surface energy of at least one of the host and dopant may be at least one of the following: about 25 dynes / cm or less, about 24 dynes / cm or less, about 22 dynes / cm or less, about 21 dynes / cm or less, about 20 dynes / cm or less, about 19 dynes / cm or less, about 18 dynes / cm or less, about 17 dynes / cm or less, about 16 dynes / cm or less, about 15 dynes / cm or less, about 14 dynes / cm or less, about 13 dynes / cm or less, about 12 dynes / cm or less, about 11 dynes / cm or less, and about 10 dynes / cm or less.

[0448] In some non-limiting examples, the characteristic surface energies of the host and dopant, respectively, may be at least one of the following: approximately 25 dynes / cm or less, approximately 24 dynes / cm or less, approximately 22 dynes / cm or less, approximately 21 dynes / cm or less, approximately 20 dynes / cm or less, approximately 19 dynes / cm or less, approximately 18 dynes / cm or less, approximately 17 dynes / cm or less, approximately 16 dynes / cm or less, approximately 15 dynes / cm or less, approximately 14 dynes / cm or less, approximately 13 dynes / cm or less, approximately 12 dynes / cm or less, approximately 11 dynes / cm or less, and approximately 10 dynes / cm or less.

[0449] In some non-limiting examples, the characteristic surface energy of at least one of the host and dopant may be at least one of about 6 dynes / cm, about 7 dynes / cm, about 8 dynes / cm, about 9 dynes / cm, about 10 dynes / cm, about 12 dynes / cm, and about 13 dynes / cm.

[0450] In some non-limiting examples, the characteristic surface energy of at least one of the host and dopant may be at least one of about 10–22 dynes / cm, about 13–22 dynes / cm, about 15–20 dynes / cm, and about 17–20 dynes / cm.

[0451] In some non-limiting examples, the absolute value of the difference between the host characteristic surface energy and the dopant characteristic surface energy may be at least one of the following: approximately 1 dyne / cm or less, approximately 2 dyne / cm or less, approximately 3 dyne / cm or less, approximately 4 dyne / cm or less, approximately 5 dyne / cm or less, approximately 7 dyne / cm or less, and approximately 10 dyne / cm or less.

[0452] While we do not wish to be bound by any particular theory, we can assume that selecting multiple patterning materials 411 with substantially small differences between their characteristic surface energies may be applicable in some scenarios, since such patterning materials are likely to be miscible with each other and less likely to separate into different phases.

[0453] glass transition temperature In some non-limiting examples, at least one of the host and the dopant may have a glass transition temperature of (i) at least one of about 300°C, about 150°C, and about 130°C, and (ii) at least one of about 20°C or less, about 0°C or less, about -30°C or less, and about -50°C or less.

[0454] melting point In some non-limiting examples, at least one of the host and the dopant may have a melting point of at least one of about 100°C, about 110°C, about 120°C, and about 130°C.

[0455] In some non-limiting examples, the absolute difference between the melting point of the host and the melting point of the dopant can be at least one of the following: approximately 50°C or less, approximately 40°C or less, approximately 35°C or less, approximately 30°C or less, and approximately 20°C or less.

[0456] sublimation temperature In some non-limiting examples, at least one of the host and the dopant may have a sublimation temperature of at least one of the following: about 100–300°C, about 120–300°C, about 140–280°C, and about 150–250°C.

[0457] In some non-limiting examples, the absolute value of the difference between the host sublimation temperature and the dopant sublimation temperature may be at least one of the following: approximately 5°C or less, approximately 10°C or less, approximately 15°C or less, approximately 20°C or less, approximately 30°C or less, approximately 40°C or less, and approximately 50°C or less.

[0458] Evaporation temperature In some non-limiting examples, the host and dopant may have substantially similar evaporation temperatures. While we do not wish to be bound by any particular theory, we can assume that such similarities may be applicable in scenarios where co-deposition of the host and dopant is intended.

[0459] Photoluminescence In some non-limiting examples, patterning materials 411 containing but not limited to at least one of a host and / or dopant may exhibit substantially weak photoluminescence or absorption, or substantially no photoluminescence or absorption, in at least one wavelength range of at least about 365 nm and about 460 nm, and therefore may tend not to function as either a photoluminescent or absorbing coating, and may be applicable in some scenarios requiring substantially high transparency in at least one of the visible and NIR spectra.

[0460] Refractive index In some non-limiting examples, at least one of the host and dopant may exhibit a refractive index that is at least one of the following with respect to EM radiation at a wavelength of about 550 nm: about 1.55 or less, about 1.5 or less, about 1.45 or less, about 1.44 or less, about 1.43 or less, about 1.42 or less, about 1.41 or less, about 1.4 or less, about 1.39 or less, about 1.37 or less, about 1.35 or less, about 1.32 or less, and about 1.3 or less.

[0461] In some non-limiting examples, both the host and the dopant may exhibit refractive indices for EM radiation at a wavelength of approximately 550 nm that are at least one of the following: approximately 1.55 or less, approximately 1.5 or less, approximately 1.45 or less, approximately 1.44 or less, approximately 1.43 or less, approximately 1.42 or less, approximately 1.41 or less, approximately 1.4 or less, approximately 1.39 or less, approximately 1.37 or less, approximately 1.35 or less, approximately 1.32 or less, and approximately 1.3 or less.

[0462] Absorption coefficient In some non-limiting examples, at least one of the host and the dopant may exhibit an extinction coefficient that may be less than or equal to about 0.01 for EM radiation at wavelengths of at least one of about 600 nm, about 500 nm, about 460 nm, about 420 nm, and about 410 nm.

[0463] weight In some non-limiting examples, the molecular weight of each of the multiple materials of the patterning coating 130, including but not limited to the host and dopant, may be at least one of approximately 750 g / mol, 1,000 g / mol, 1,500 g / mol, 2,000 g / mol, 2,500 g / mol, and 3,000 g / mol.

[0464] In some non-limiting examples, the molecular weight of at least one compound of the patterning material 411, which includes but is not limited to at least one of a host and a dopant, may be at least one of about 5,000 g / mol or less, about 4,500 g / mol or less, about 4,000 g / mol or less, about 3,800 g / mol or less, and about 3,500 g / mol or less.

[0465] In some non-limiting examples, the molecular weight of a compound of at least one patterning material 411, which includes but is not limited to at least one of a host and a dopant, may be at least one of about 1,000 g / mol, about 1,200 g / mol, about 1,500 g / mol, about 1,700 g / mol, about 2,000 g / mol, about 2,200 g / mol, and about 2,500 g / mol.

[0466] In some non-limiting examples, the molecular weight of at least one compound of patterning material 411, which includes but is not limited to at least one of a host and a dopant, may be at least one of about 1,500–5,000 g / mol, about 1,500–4,500 g / mol, about 1,700–4,500 g / mol, about 2,000–4,000 g / mol, about 2,200–4,000 g / mol, and about 2,500–3,800 g / mol.

[0467] Tanimoto coefficient In some non-limiting examples, the Tanimoto coefficient between the host and the dopant may be at least one of approximately 0.65, 0.7, 0.75, 0.8, 0.85, 0.9, and 0.95.

[0468] While we do not wish to be bound by any particular theory, as a non-limiting example, it can be assumed that host-dopant combinations having a relatively high degree of similarity, which can be determined by the Tanimoto coefficient, may be applicable in some scenarios due to an improved ability to process the material to form a patterning coating 130 containing such host-dopant combinations.

[0469] In some non-restrictive examples, the Tanimoto coefficient between the host and the dopant may be 1. As a non-restrictive example, certain oligomers composed of the same monomer but having different numbers of monomer units may have a Tanimoto coefficient of 1, despite the difference in the number of monomer units they contain.

[0470] composition In some non-limiting examples, both the host and the dopant may be patterning material 411.

[0471] In some non-limiting examples, at least one of the host and dopant of the patterning film 130 may be an oligomer. In some non-limiting examples, each of the host and dopant may be an oligomer. In some non-limiting examples, the host may comprise a first oligomer and the dopant may comprise a second oligomer. In some non-limiting examples, each of the first and second oligomers may comprise at least one common monomer.

[0472] In some non-limiting examples, monomers may contain at least one common functional group. In some non-limiting examples, monomers may contain at least one common monomer backbone unit.

[0473] In some non-limiting examples, the first and second oligomers may contain at least one common monomer backbone unit.

[0474] In some non-limiting examples, the monomer backbone units of the host and dopant may contain at least one common element. In some non-limiting examples, the at least one common element may be at least one of P and N for the host and dopant which are phosphazene derivative compounds. In some non-limiting examples, the at least one common element may be at least one of Si and O for the host and dopant which are silsesquioxane derivative compounds.

[0475] In some non-limiting examples, the functional groups of the host and dopant may contain at least one common element. In some non-limiting examples, the at least one common element may be at least one of F, C, and O.

[0476] In some non-limiting examples, the functional groups of the host and dopant may include at least one common part. In some non-limiting examples, the at least one common part may be at least one of CH2 and CF2.

[0477] In some non-limiting examples, the functional groups of the host and dopant may be substantially identical.

[0478] In some non-limiting examples, the functional groups of the host and dopant may include fluoroalkyl moieties. In some non-limiting examples, the fluoroalkyl moiety of the host may differ from the fluoroalkyl moiety of the dopant by at least one of the following: about six carbon units, about five carbon units, about three carbon units, about two carbon units, and about one carbon unit.

[0479] In some non-limiting examples, at least one of the host and dopant may have a molecular structure substantially lacking a metal element. In some non-limiting examples, the molecular structure of such a compound may substantially lack any metal coordination complex and organometallic structure. In some non-limiting examples, the host may have a molecular structure substantially lacking a metal element. While we do not wish to be bound to any particular theory, in non-limiting examples, we can assume that metal-containing compounds such as EM-15 may exhibit relatively low deposition contrast and therefore may have reduced applicability in at least certain scenarios.

[0480] Non-limiting examples of host-dopant combinations of such patterning film 130 include (i) any combination of EM-4, EM-10, EM-11, EM-12, EM-13, and EM-14, and (ii) any combination of EM-8 and other POSS derivative compounds, the other POSS derivative compounds including, but not limited to, those having the same monomer as EM-8 and a different number of monomers (e.g., 8 or 10 in non-limiting examples).

[0481] A monomer skeleton containing P and N. In some non-limiting examples, the monomer backbone unit may include P and N, but not limited to the phosphazene moiety. In some non-limiting examples, at least a portion of the molecular structure of at least one of the first oligomer and / or the second oligomer can be represented by formula (VI). In some non-limiting examples, at least one of the first and second oligomers can be represented by formula (VI). In some non-limiting examples, at least one of the first and second oligomers may be a cyclophosphazene. In some non-limiting examples, the molecular structure of a cyclophosphazene can be represented by formula (VI).

[0482] In some non-restrictive examples, the value of n in equation (VI) for the first oligomer may differ from the value of n in equation (VI) for the second oligomer.

[0483] In some non-restrictive cases, the absolute value of the difference between the value of n in formula (VI) of the first oligomer and the value of n in formula (VI) of the second oligomer may be 1. In some non-restrictive cases, the molecular structure of one of the first and second oligomers may be represented by formula (VI), where n is 4 and it is a tetramer. In some non-restrictive cases, the molecular structure of the other of the first and second oligomers may be represented by formula (VI), where n is 3 and it is a trimer.

[0484] In some non-limiting examples, at least a portion of the molecular structure of at least one of the first oligomers and / or the second oligomer can be represented by formula (VII).

[0485] In some non-restrictive cases, the value of n in formula (VII) of the first oligomer may differ from the value of n in formula (VII) of the second oligomer. In some non-restrictive cases, the molecular structure of one of the first and second oligomers may be represented by formula (VII), where n is 4 and it is a tetramer. In some non-restrictive cases, the molecular structure of the other of the first and second oligomers may be represented by formula (VII), where n is 3 and it is a trimer.

[0486] In some non-limiting examples, at least one of the first and second oligomers may contain a fluoroalkyl group represented by formula (VIII). In some non-limiting examples, the molecular structures of the first and / or second oligomers may each independently contain a fluoroalkyl group represented by formula (VIII). In some non-limiting examples, the fluoroalkyl group of the first oligomer may be the same as that of the second oligomer. In some non-limiting examples, the fluoroalkyl group of the first oligomer may be different from that of the second oligomer. In some non-limiting examples, the fluoroalkyl group of the first oligomer may have different p and q values ​​from that of the fluoroalkyl group of the second oligomer.

[0487] In some non-limiting examples, the first oligomer may contain a fluoroalkyl group of formula (VIII), where Z is H, such that the fluoroalkyl group has a CF2H terminal group. In some non-limiting examples, the second oligomer may contain a fluoroalkyl group of formula (VIII), where Z is H. In some non-limiting examples, the second oligomer may contain a fluoroalkyl group of formula (VIII), where Z is F.

[0488] While we do not wish to be bound by any particular theory, it can be assumed that hosts containing phosphazene derivative compounds having a CF2H-terminated group may be applicable in some scenarios compared to similar phosphazene derivative compounds containing a CF3-terminated group. In some non-limiting examples, somewhat surprisingly, it has been found that using such hosts can provide at least one of the following: substantially high deposition contrast, substantially low tendency of the patterning film 130 to undergo crystallization, and substantially low tendency of the patterning film 130 to undergo cohesive fracture or delamination. In some non-limiting examples, the host may be a phosphazene derivative compound substantially lacking a CF3 group. In some non-limiting examples, the dopant may also be a phosphazene derivative compound substantially lacking a CF3 group.

[0489] In some non-limiting examples, the host monomer may contain functional groups containing F, including but not limited to at least one that is not totally fluorine-substituted, and including but not limited to none of which are totally fluorine-substituted.

[0490] monomer skeleton containing Si and O In some non-limiting examples, the monomer backbone unit may include Si and O, including, but not limited to, a siloxane moiety that may form part of a silsesquioxane in some non-limiting examples. In some non-limiting examples, at least part of the molecular structure of at least one of the first oligomer and / or the second oligomer may be represented by at least one of formulas (IX), (X), and (XI). In some non-limiting examples, at least one of the first oligomer and the second oligomer may be represented by at least one of formulas (IX), (X), and (XI). In some non-limiting examples, at least one of the first oligomer and the second oligomer may be a silsesquioxane derivative.

[0491] In some non-restrictive examples, the value of n in at least one of the equations (IX), (X), and (XI) of the first oligomer may differ from the value of n in at least one of the equations (IX), (X), and (XI) of the second oligomer.

[0492] In some non-restrictive examples, the absolute value of the difference between the value of n for the first oligomer and the value of n for the second oligomer may be at least one of 2, 4, and 6. In some non-restrictive examples, the molecular structure of one of the first and second oligomers may be represented by at least one of formulas (IX), (X), and (XI), where n is 12. In some non-restrictive examples, the molecular structure of the other of the first and second oligomers may be represented by at least one of formulas (IX), (X), and (XI), where n is 10 or 8.

[0493] In some non-limiting examples, the host may be a silsesquioxane derivative according to at least one of formulas (IX), (X), and (XI), and may contain a functional group terminal unit that is CH2CF3.

[0494] While we do not wish to be bound by any particular theory, we can assume that a silsesquioxane derivative host containing a CH2CF3-terminated group may be applicable in at least some scenarios compared to similar silsesquioxane derivatives containing other fluoroalkyl-terminated groups, but not limited to, one of the following: CH2CF2H-terminated group, CF2CF3-terminated group, CF2CF2H-terminated group, and CF2CF3-terminated group. In some non-limiting examples, somewhat surprisingly, it has been found that using a silsesquioxane derivative host containing a CH2CF-3-terminated group may be applicable in scenarios requiring at least one of the following: substantially high deposition contrast, substantially low tendency of the patterning layer to undergo crystallization, and substantially low tendency of the patterning layer to undergo cohesive fracture or delamination.

[0495] The difference between a host and a dopant In some non-limiting examples, the host and dopant may differ in at least one other material property, including but not limited to the composition, including but not limited to the number or presence of repeating monomers in one and / or the other, including but not limited to oligomeric units.

[0496] Examples To compare the performance of a patterning coating 130 containing multiple materials, including but not limited to hosts and dopants having a substantially high degree of similarity, with the performance of a patterning coating 130 containing a single patterning material 411, the following experiment was conducted.

[0497] A series of samples were prepared by depositing patterned coatings 130 with various compositions in a vacuum. Then, for each sample, the exposed layer surface 11 of the patterned coating 130 formed thereon was subjected to open-mask deposition of Ag-containing deposition material 531 at an average deposition rate of approximately 1 Å / s until a reference thickness of approximately 30 nm was achieved. Once the samples were prepared, the EM transmittance was measured to determine the relative amount of Ag deposited on the exposed layer surface 11 of the patterned coating 130.

[0498] Those skilled in the art will understand that a sample with relatively little and / or no deposited material 531, including but not limited to metals / alloys containing at least one of Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg, may be substantially transparent, while a sample with a substantial amount of metal / alloy deposited, including but not limited to a closing film 150, may exhibit substantially reduced transmittance in some non-limiting examples. Thus, the relative performance of various exemplary coatings as patterning films 130 can be evaluated by measuring the transmittance through a sample, and this transmittance may positively correlate with the amount and / or average thickness of deposited material 531, including but not limited to metals / alloys containing at least one of Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg, deposited thereon, as a thin metal film, including but not limited to when formed as a closing film 150, may exhibit high absorption of EM radiation.

[0499] The decrease in transmittance at a wavelength of 460 nm after each sample was subjected to an Ag vapor flux was measured and summarized in Table 7.

[0500] [Table 8]

[0501] The percentage decrease in transmittance for each sample in Table 7 was determined by measuring the EM transmittance through the sample before and after exposure to the Ag vapor flux, and expressing the decrease in transmittance as a percentage.

[0502] It can be understood that samples containing EM-11 and EM-12 in varying proportions exhibited a lower transmittance reduction (%) corresponding to the increased deposition contrast compared to both samples substantially containing at least one of EM-11 and EM-12. Those skilled in the art will understand that samples exhibiting a lower transmittance reduction (%) may, in at least some scenarios, be applicable as NIC materials having at least one of high deposition contrast and low initial adhesion probability.

[0503] Similar experiments were conducted using metallic materials other than Ag as the deposit material 531, which includes but is not limited to Yb, Mg, Cu, and MgAg (volume ratio 1:9 to 9:1). Each of these similarly exhibited at least one of the following: high deposit contrast and low initial adhesion probability.

[0504] Category 2: Host and Dopant are different. While we do not wish to be bound by any particular theory, in some non-limiting examples, we can assume that by mixing a dopant having at least one given material property with a host that does not exhibit such a given material property, a patterning coating 130 can be obtained that exhibits the given material property of the dopant while continuing to exhibit the other material properties of the host. This ability may be applicable in some scenarios where the host exhibits certain material properties including, but not limited to, a reduced tendency to cause delamination, a reduced tendency to cohesive fracture, and a reduced tendency to crystallize, while the dopant exhibits certain other material properties including, but not limited to, material properties that lead to improved deposition contrast, including, but not limited to, a low surface energy and a low melting point.

[0505] In some non-limiting examples, the different material properties of the host and dopant may include, but are not limited to, at least one of the following: surface energy within a certain range, melting point, and some composition of the molecular structure of the host and dopant.

[0506] In some non-limiting examples, the host and dopant may exhibit similarities in at least one other material property, including but not limited to sublimation temperature, photoluminescence, or substantial absence thereof, and molecular weight.

[0507] Sedimentary contrast In some non-limiting cases, the host may exhibit substantially high depositional contrast.

[0508] In some non-limiting cases, the dopant may exhibit higher depositional contrast than the host.

[0509] In some non-limiting cases, dopants may exhibit substantially high depositional contrast. In some non-limiting cases, dopants may exhibit depositional contrast at least as large as that of the host.

[0510] In some non-limiting cases, the dopant may exhibit substantially low deposition contrast. In some non-limiting cases, if the dopant exhibits substantially low deposition contrast, the concentration of the host in the patterning film 130 may substantially exceed the concentration of the dopant therein.

[0511] Surface energy In some non-restrictive examples, the characteristic surface energy of the host may exceed the characteristic surface energy of the dopant.

[0512] In some non-limiting examples, the host may have at least one characteristic surface energy of approximately 15–23 dynes / cm and approximately 18–22 dynes / cm.

[0513] In some non-limiting examples, the dopant may have at least one characteristic surface energy of about 6–22 dynes / cm, about 8–20 dynes / cm, about 10–18 dynes / cm, and about 10–15 dynes / cm.

[0514] In some non-limiting examples, the absolute value of the difference between the host characteristic surface energy and the dopant characteristic surface energy can be at least one of the following: about 1–13.5 dynes / cm, about 2–12 dynes / cm, about 3–11 dynes / cm, and about 5–10 dynes / cm.

[0515] In some non-limiting examples, the characteristic surface energy of the host may be about 16–22 dynes / cm, while the characteristic surface energy of the dopant may be about 10–15 dynes / cm.

[0516] In some non-limiting examples, the absolute difference between the characteristic surface energy of the host and the characteristic surface energy of the dopant can be at least 3 dynes / cm.

[0517] In some non-limiting examples, the absolute value of the difference between the host's characteristic surface energy and the dopant's characteristic surface energy can be at least one of approximately 3–8 dynes / cm and approximately 3–5 dynes / cm.

[0518] melting point In some non-restrictive cases, the melting point of the host may exceed the melting point of the dopant.

[0519] In some non-limiting examples, both the host and the dopant may have melting points that are at least one of about 80°C, about 100°C, about 110°C, about 120°C, and about 130°C.

[0520] In some non-limiting examples, the host may have a melting point that is at least one of about 130°C, about 150°C, about 200°C, and about 250°C.

[0521] In some non-limiting examples, the host may have a melting point that is at least one of the following: about 100–350°C, about 130–320°C, about 150–300°C, and about 180–280°C.

[0522] In some non-limiting examples, the dopant may have a melting point of at least one of the following: about 150°C or less, about 140°C or less, about 130°C or less, about 120°C or less, and about 110°C or less.

[0523] In some non-limiting examples, dopants may have melting points that are at least one of the following: about 50–150°C, about 80–150°C, about 65–130°C, and about 80–110°C.

[0524] In some non-limiting examples, the absolute value of the difference between the melting point of the host and the melting point of the dopant may be at least one of the following: about 10–200°C, about 20–200°C, about 50–180°C, about 80–150°C, and about 100–120°C.

[0525] In some non-limiting examples, the host may have at least one melting point among approximately 150–300°C, approximately 180–280°C, approximately 200–260°C, and approximately 220–250°C, and the dopant may have at least one melting point among approximately 100–150°C, approximately 100–130°C, and approximately 100–120°C.

[0526] In some non-limiting examples, the absolute value of the difference between the melting point of the host and the melting point of the dopant may be at least one of approximately 50–120°C, approximately 70–100°C, and approximately 80–100°C.

[0527] Evaporation temperature In some non-limiting examples, the absolute value of the difference between the host evaporation temperature and the dopant evaporation temperature may be at least one of the following: approximately 5°C or less, approximately 10°C or less, approximately 15°C or less, approximately 20°C or less, approximately 30°C or less, approximately 40°C or less, and approximately 50°C or less.

[0528] In some non-limiting examples, both the host and the dopant may have evaporation temperatures ranging from approximately 100 to 350°C.

[0529] In some non-limiting examples, the host and dopant may have substantially similar evaporation temperatures, such that it may be possible to co-evaporate the host and dopant from at least one of separate evaporation sources and a single evaporation source.

[0530] Optical gap or band gap In some non-limiting examples, the host may have substantially large optical gaps. In some non-limiting examples, the host may have at least one optical gap of at least about 3.4 eV, about 3.5 eV, about 4.1 eV, about 5 eV, and about 6.2 eV.

[0531] In some non-restrictive cases, the optical gap may correspond to the HOMO-LUMO gap.

[0532] Absorption and other optical effects In some non-limiting examples, the host does not need to exhibit substantial absorption in at least one of the following wavelength ranges: around the visible spectrum, around the NIR spectrum, around 365 nm, and around 460 nm.

[0533] weight In some non-limiting examples, the host may be a compound having at least one molecular weight among approximately 1,200–6,000 g / mol, approximately 1,500–5,500 g / mol, approximately 1,500–5,000 g / mol, approximately 2,000–4,500 g / mol, approximately 2,300–4,300 g / mol, and approximately 2,500–4,000 g / mol.

[0534] composition In some non-limiting examples, at least one of the host and dopant may include molecules comprising at least one of a cage structure, a cyclic structure, and an organic-inorganic hybrid structure. Non-limiting examples of such compounds include POSS derivatives and cyclophosphazene derivatives.

[0535] In some non-limiting examples, the host may have a molecular structure that includes at least one of the following: a cage structure, a cyclic structure, and an organic-inorganic hybrid structure.

[0536] In some non-limiting examples, at least one of the host and the dopant may contain at least one of F and Si. In some non-limiting examples, the host may contain at least one of F and Si, and the dopant may contain at least one of F and Si. In some non-limiting examples, both the host and the dopant may contain F. In some non-limiting examples, both the host and the dopant may contain Si. In some non-limiting examples, each of the host and the dopant may contain at least one of F and Si. In some non-limiting examples, the host may be POSS, and the dopant may be cyclophosphazene.

[0537] In some non-limiting examples, the degree of fluorination can be measured by the percentage of the molecular weight of the compound due to the fluorine atoms it contains. In some non-limiting examples, the host may contain fluorine in at least one of the following proportions based on the molecular weight of the compound: 25–75%, 25–70%, 30–70%, 35–50%, 35–45%, and 35–40%. In some non-limiting examples, the dopant may contain fluorine in at least one of the following proportions based on the molecular weight of the compound: 25–75%, 25–70%, 30–70%, 50–70%, 55–70%, and 60–70%. In some non-limiting examples, the dopant may be selected such that the percentage of fluorine based on the molecular weight of the dopant's compound exceeds that of the host. As a non-limiting example, the host may contain F at a rate of approximately 35-45% of the compound's molecular weight, and the dopant may contain F at a rate of approximately 60-70% of the compound's molecular weight.

[0538] In some non-limiting examples, the host molecular structure may contain F and C in atomic ratios corresponding to at least one of the following quotients F / C: approximately 0.7–2.5, approximately 0.7–2, approximately 0.8–1.85, approximately 0.7–1.3, and approximately 0.75–1.1. In some non-limiting examples, the F to C atomic ratio counts all F atoms present in the compound structure, and for C atoms, counts the sp atoms present in the compound structure. 3 This can be determined by counting only the hybridized carbon atoms.

[0539] In some non-specific examples, the host has virtually a small number of SPs. 2 It may contain hybrid C atoms. As a non-limiting example, the host may be sp 2 Hybrid carbon atoms may be present in at least one of the following proportions based on the percentage of the molecular weight of the compound: approximately 10% or less, approximately 8% or less, approximately 5% or less, approximately 3% or less, approximately 2% or less, and approximately 1% or less. In some non-limiting examples, the host is sp 2Hybrid carbon atoms may be present in at least one of the following proportions, based on the percentage of the total carbon atoms in the compound: approximately 15% or less, approximately 13% or less, approximately 10% or less, approximately 8% or less, approximately 5% or less, approximately 3% or less, approximately 2% or less, and approximately 1% or less. While we do not wish to be bound by any particular theory, sp 2 Hosts with a substantially low proportion of hybridized carbon atoms are due to at least one of the following: sp 2 Compared to similar compounds with a substantially high proportion of hybridized carbon atoms, it can be assumed that it may have applications in at least some scenarios: substantially high deposition contrast, substantially low tendency of the patterning layer to undergo crystallization, and substantially low tendency of the patterning layer to undergo cohesive fracture or delamination.

[0540] In some non-limiting examples, the host and dopant may comprise a continuous fluorinated carbon chain in which at least one of the following is 6 or less, 4 or less, 3 or less, 2 or less, and 1 or less.

[0541] In some non-restrictive cases, the host can be an oligomer.

[0542] In some non-limiting examples, the host may contain Si. In some non-limiting examples, the host may contain Si and O. In some non-limiting examples, substantially all of the Si atoms in the host may form part of at least one of the siloxane and silsesquioxane moies of the host. While we do not wish to be limited by any particular theory, it can be assumed that a host substantially lacking reactive silicon moieties may be applicable in scenarios requiring at least one of substantially high melting points and substantially high deposition contrast. In some non-limiting examples, materials containing reactive Si moieties may, in some non-limiting examples, be in the form of at least one of silane moieties, trichlorosilane moieties, and alkoxysilane moieties, and it has been found that due to the presence of such reactive Si moieties, they may tend to exhibit at least one of substantially low melting points, substantially low deposition contrast, and substantially high initial adhesion probability to the deposited material 531. Other non-limiting examples of reactive Si moieties include those in which Si is bonded to at least one of H, Cl, Br, and I.

[0543] In some non-limiting examples, the host may contain a fully condensed silsesquioxane moiety, i.e., the molecular structure of the host may substantially lack any uncondensed or partially condensed siloxane and / or Si-O moieties.

[0544] In some non-restrictive examples, the host may contain monomers.

[0545] In some non-limiting examples, the host monomer may include a Si-containing monomer backbone unit, which may include, but is not limited to, at least one POSS and / or POSS derivative compound. In some non-limiting examples, the POSS derivative compound may include a functional group containing F.

[0546] In some non-limiting examples, the host and the dopant may each be oligomers. In some non-limiting examples, the host may contain a first oligomer and the dopant may contain a second oligomer.

[0547] In some non-limiting examples, the host may be a non-polymeric material containing, but not limited to, block oligomers.

[0548] In some non-limiting examples, the functional group monomer unit of the host may be at least one of CH2 and CF2. In some non-limiting examples, the functional group of the host may include a CH2CF3 portion. In some non-limiting examples, such functional group monomer units may be bonded together to form at least one of alkyl or fluoroalkyl oligomer units. In some non-limiting examples, the monomer unit of the host may further include a functional group terminal unit. In some non-limiting examples, the functional group terminal unit of the host may be located at the end of a monomer unit and bonded to that functional group monomer unit. In some non-limiting examples, the end to which the functional group terminal unit of the host may be located may correspond to a portion of a functional group that may be distal to the monomer backbone unit. In some non-limiting examples, the functional group terminal unit of the host may include at least one of CF3 and CH2CF3.

[0549] In some non-limiting examples, each functional group of the host may consist only of a single fluorinated carbon moiety, including but not limited to the compound represented by formula (XI). In some non-limiting examples, the single fluorinated carbon moiety of the functional group of the host may correspond to a terminal moiety, including but not limited to the CF3 moiety.

[0550] In some non-limiting examples, the host functional group is any sp 2 Hybrid C atoms may also be virtually absent, that is, the functional groups of the host are sp 2The hybridized carbon atom may substantially lack the double bond and / or aromatic hydrocarbon moiety required by the host functional group. In some non-limiting examples, any carbon atom in the host functional group may be sp 3 Hybrid carbon atoms are also acceptable.

[0551] In some non-limiting examples, the host may substantially lack any aromatic structures within it.

[0552] In some non-restrictive cases, dopants may contain monomers.

[0553] In some non-restrictive examples, the monomer of a dopant may contain a functional group containing F.

[0554] In some non-limiting examples, the functional group monomer unit of the dopant may be at least one of CH2 and CF2. In some non-limiting examples, the functional group of the dopant may include at least one of CF2CF3 and CF2CF3 moieties. In some non-limiting examples, such functional group monomer units may be bonded together to form at least one of alkyl or fluoroalkyl oligomer units. In some non-limiting examples, the monomer unit of the dopant may further include a functional group terminal unit. In some non-limiting examples, the functional group terminal unit of the dopant may be located at the end of a monomer unit and bonded to that functional group monomer unit. In some non-limiting examples, the end to which the functional group terminal unit of the dopant may be located may correspond to a portion of a functional group that may be distal to the monomer backbone unit. In some non-limiting examples, the functional group terminal unit of the dopant may include at least one of CF2CF3 and CF2CF3.

[0555] In some non-limiting examples, the dopant may contain phosphorus (P) and nitrogen (N), and may contain, but not limited to, at least one of cyclophosphazene (including, but not limited to, as part of its monomeric backbone) and cyclophosphazene derivative compounds, which have a double bond between P and N and can be represented as "NP" or "N=P". In some non-limiting examples, the cyclophosphazene derivative compound may contain a functional group containing F.

[0556] In some non-limiting examples, the dopant may contain F. In some non-limiting examples, the dopant may have a higher degree of fluorination than the host.

[0557] In some non-limiting examples, the dopant may be a non-polymeric material containing, but not limited to, a block oligomer.

[0558] In some non-limiting examples, the dopant concentration in the patterning film 130 may be about 50% or less, including but not limited to at least one of about 40% or less, about 30% or less, about 25% or less, about 20% or less, about 15% or less, about 10% or less, and about 5% or less. In some non-limiting examples, the dopant concentration in the patterning film 130 may be below the concentration corresponding to the eutectic point of the mixture, so that the patterning film 130 may be a hypoeutectic mixture of host and dopant.

[0559] In some non-limiting examples, the dopant concentration in the patterning film 130 may be at least one of approximately 1%, approximately 3%, approximately 5%, approximately 7%, and approximately 10%. While we do not wish to be limited by any particular theory, it can be assumed that at least one dopant concentration of approximately 5–30%, approximately 5–20%, and approximately 5–15% may be applicable in at least some scenarios where it is necessary to improve at least one property of the patterning film 130 formed by the host-dopant mixture.

[0560] In some non-limiting examples, at least one of the host and the dopant may have a molecular structure substantially lacking a metal element, including but not limited to at least one of a metal coordination complex and an organometallic structure. In some non-limiting examples, the host may have a molecular structure substantially lacking a metal element.

[0561] Non-limiting examples of host-dopant combinations of such patterning coating 130 include a host which is EM-8 and a dopant selected from at least one of EM-4, EM-10, EM-11, EM-12, EM-13, and EM-14.

[0562] Metal fluoride dopant In some non-limiting examples, the dopant may be a metallic fluoride containing F and at least one of alkali metals, alkaline earth metals, and rare earth metals, including but not limited to cesium fluoride, lithium fluoride, potassium fluoride, rubidium fluoride, sodium fluoride, beryllium fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, barium fluoride, scandium fluoride, neodymium fluoride, ytterbium fluoride, yttrium fluoride, erbium fluoride, lanthanum fluoride, samarium fluoride, terbium fluoride, and thulium fluoride.

[0563] In some non-limiting examples, the dopant may include at least one of lithium fluoride, magnesium fluoride, and ytterbium fluoride.

[0564] In some non-limiting examples, the dopant may include lithium fluoride (LiF).

[0565] Non-limiting examples of hosts for such patterned coatings 130 include EM-4, EM-8, EM-10, EM-11, EM-12, EM-13, and EM-14.

[0566] Surface energy and melting point In some non-limiting examples, the host may have a characteristic surface energy of about 16–20 dynes / cm and a melting point of about 150–300°C.

[0567] In some non-limiting examples, the dopant may have a characteristic surface energy lower than the host's characteristic surface energy by at least 3 dynes / cm, but including, but not limited to, at least 3-8 dynes / cm and at least one of about 3-5 dynes / cm, and a melting point lower than the host's melting point by at least 100°C, but including at least one of about 50-120°C, about 70-110°C, and about 80-100°C.

[0568] Sedimentation contrast, surface energy, and cohesive energy Here, in some non-limiting examples, it has been found that patterned coatings 130 formed by certain patterning materials 411 having relatively low characteristic surface energies, including but not limited to at least one of approximately 15 dynes / cm or less, approximately 14 dynes / cm or less, approximately 13 dynes / cm or less, and approximately 10 dynes / cm or less, can exhibit substantially high deposition contrast and substantially low cohesive energy and / or adhesion energy to adjacent layers. The substantially high deposition contrast that can be achieved by such patterning materials 411 may be applicable in some scenarios, while the substantially low cohesive energy and / or adhesion energy may lead to device failure and introduce reliability issues, thus reducing their applicability in some scenarios.

[0569] In some non-limiting examples, patterned coatings 130 formed by certain patterning materials 411 having characteristic surface energies including, but not limited to, at least one of approximately 15–25 dynes / cm, approximately 16–22 dynes / cm, and approximately 17–20 dynes / cm may exhibit a deposition contrast that may be applicable in some scenarios, while also exhibiting substantially high cohesive energy and / or adhesion energy to adjacent layers such as CPL. While substantially high cohesive energy and / or adhesion between these layers may be applicable in some scenarios, the patterning contrast achievable by such patterning materials 411 may be substantially lower compared to the patterning contrast achievable by patterning materials 411 having substantially lower characteristic surface energies, and therefore may reduce their applicability in some scenarios in which such materials may be used.

[0570] Somewhat surprisingly, in some non-limiting examples, patterned coatings 130 formed by mixing or doping a host having substantially low deposition contrast with a dopant having substantially high deposition contrast have been found to exhibit, in some non-limiting examples, a deposition contrast of substantially at least the same magnitude as that of the second material itself, while exhibiting substantially the same degree of cohesive energy and / or adhesion energy to the adjacent layer as that exhibited by the first material itself.

[0571] In some non-limiting cases, the host may exhibit substantially high characteristic surface energy. In some non-limiting cases, the dopant may exhibit substantially low characteristic surface energy. In some non-limiting cases, the host may exhibit a characteristic surface energy that is substantially at least the same as that of the dopant.

[0572] Examples To compare the performance of a patterning coating 130 containing multiple materials, including but not limited to hosts and dopants having substantially low degrees of similarity, with the performance of a patterning coating 130 containing a single patterning material 411, the following experiment was conducted.

[0573] In some non-limiting examples, a series of samples were prepared by depositing a layer of organic material, which may be an HTL material, approximately 20 nm thick in a vacuum, and then depositing patterned coatings 130 of various compositions on top of it.

[0574] Next, for each sample, the exposed layer surface 11 of the patterned film 130 formed thereon was subjected to open-mask deposition of Ag-containing deposition material 531 at an average deposition rate of approximately 1 Å / s until a reference thickness of approximately 15 nm was achieved. Once the samples were prepared, the EM transmittance was measured to determine the relative amount of Ag deposited on the exposed layer surface 11 of the patterned film 130.

[0575] As described above, the decrease in EM transmittance generally correlates positively with the amount of deposited material condensed on the patterned coating 130.

[0576] The decrease in transmittance at a wavelength of 460 nm after exposure of each sample to an Ag vapor flux was measured and summarized in Table 8, along with the critical surface tension measured from each patterned coating before exposure of the surface to the Ag vapor flux.

[0577] [Table 9]

[0578] The percentage decrease in transmittance for each sample in Table 8 was determined by measuring the EM transmittance through the sample before and after exposure to the Ag vapor flux and expressing the decrease in transmittance as a percentage.

[0579] Samples containing substantially only EM-8 showed a 9.7% decrease in transmittance, while other samples in which patterned coatings 130 were formed by doping EM-8 with dopants exhibiting higher deposition contrast compared to EM-8 resulted in patterned layers with substantially lower transmittance reductions. For example, patterned layers formed with EM-11:EM-8 (volume ratio 1:9), EM-12:EM-8 (volume ratio 1:19), EM-13:EM-8 (volume ratio 1:19), EM-13:EM-8 (volume ratio 1:9), and EM-4:EM-8 (volume ratio 1:9) each showed substantially lower transmittance reductions compared to patterned coatings 130 containing only EM-8, suggesting that these dopants can substantially improve deposition contrast even in relatively small amounts.

[0580] In contrast, EM-14 was found to exhibit substantially low deposition contrast when deposited alone as patterning film 130, or when doped with various concentrations of EM-11. Based on the above, it can be observed that the applicability of using EM-14 as a host may be reduced in at least some scenarios.

[0581] Similar experiments were conducted using metallic materials other than Ag as the deposit material 531, which includes but is not limited to Yb, Mg, Cu, and MgAg (volume ratio 1:9 to 9:1). Each of these similarly exhibited at least one of the following: high deposit contrast and low initial adhesion probability.

[0582] Improve patterning contrast while satisfying crystallization / aggregation constraints. Somewhat surprisingly, it has been found that patterned coatings 130 formed by mixing and / or doping a host having substantially low deposition contrast with a dopant having substantially high deposition contrast can, in some non-limiting examples, exhibit deposition contrast comparable to that of the dopant when used alone, while also exhibiting substantially the same degree of cohesive energy and / or adhesion energy to adjacent layers as that of the host when used alone.

[0583] To evaluate the tendency of patterned coatings to crystallize, a series of samples were prepared by depositing a Liq layer approximately 20 nm thick in a vacuum, followed by depositing patterned coatings 130 of various compositions on top of it. Additional samples with the same structure were prepared, and additional layers of organic material and LiF were deposited on the exposed layer surface 11 of the patterned coating 130 to function as CPL. The samples were then calcined at 100°C for 240 hours and analyzed visually and using EM transmittance measurement to determine whether the patterned coating 130 crystallized during calcination. Samples showing little or no signs of crystallization were identified as having passed the crystallization test, and samples showing signs of crystallization were identified as having failed the crystallization test.

[0584] To evaluate the tendency of the patterning coating 130 to undergo delamination or cohesive failure, a series of samples were prepared to determine the failure points during delamination and / or delamination. Specifically, each sample was prepared by depositing a layer of approximately 50 nm thick of each exemplary material functioning as the patterning coating 130, followed by a layer of approximately 50 nm thick of an organic material commonly used when depositing CPL, on a glass substrate 10. Adhesive tape was then applied to the exposed layer surface 11 of the CPL of each sample. The adhesive tape was peeled off to induce delamination of each sample, and the peeled adhesive tape and the delaminated sample were analyzed to determine which layer (or interface with the underlying layer) fracture occurred. Samples in which fracture occurred within the patterning layer or at the interface between the patterning layer and the adjacent layer were identified as failing the delamination test, while samples in which fracture occurred within the CPL (i.e., cohesive failure within the CPL) were identified as passing the delamination test.

[0585] Table 9 summarizes the results of the crystallization test and the delamination test.

[0586] [Table 10]

[0587] As can be seen from the results in Tables 8 and 9, the patterned coating 130 formed by mixing a dopant with a host containing EM-8 was observed to improve its deposition contrast while maintaining the crystallization and exfoliation properties of the host. Specifically, it was found that samples in which the patterned layer was formed with EM-8, as well as samples formed with at least one of EM-11:EM-8 (volume ratio 1:9), EM-12:EM-8 (volume ratio 1:19), EM-12:EM-8 (volume ratio 1:9), EM-13:EM-8 (volume ratio 1:19), and EM-13:EM-8 (volume ratio 1:9), passed both the crystallization test and the exfoliation test.

[0588] In contrast, the patterned coating 130 formed with EM-14 passed the crystallization test but failed the delamination test due to cohesive failure in the patterned coating 130. The patterned coating 130 formed by doping EM-11 into EM-14 also passed the crystallization test but failed the delamination test. Based on the results in Tables 8 and 9, it was observed that EM-14 may have reduced applicability as a host material in at least some scenarios requiring substantially high deposition contrast and high cohesive strength.

[0589] In some non-limiting examples, a series of samples were prepared by depositing a layer of organic material, which may be an HTL material, approximately 20 nm thick in a vacuum, and then depositing patterned coatings 130 of various compositions on top of it. For each sample, the exposed layer surface 11 of the patterned coating 130 formed thereon was subjected to open-mask deposition of Ag-containing deposition material 531 at an average deposition rate of approximately 1 Å / s until a reference thickness of approximately 15 nm was achieved. Once the samples were prepared, EM transmittance was measured to determine the relative amount of Ag deposited on the exposed layer surface 11 of the patterned coating 130. As described above, the decrease in transmittance generally correlates positively with the amount of deposition material 531 condensed on the patterned coating 130.

[0590] To evaluate the tendency of the patterned coating 130 to undergo crystallization, a series of other samples with the same patterned coating 130 composition were prepared. These samples were prepared by depositing a Liq layer approximately 20 nm thick in a vacuum, followed by depositing patterned coatings 130 of various compositions on top of it. Additional samples with the same structure were prepared, and additional layers of organic material and LiF were deposited on the patterned coating surface to function as CPL. The samples were then calcined at 100°C for 240 hours and analyzed visually and using EM transmittance measurements to determine whether the patterned coating 130 crystallized during calcination. Samples showing little or no signs of crystallization were identified as having passed the crystallization test, and samples showing signs of crystallization were identified as having failed the crystallization test.

[0591] The decrease in transmittance at a wavelength of 460 nm after each sample was subjected to an Ag vapor flux was measured and summarized in Table 10 along with the results of the crystallization test.

[0592] [Table 11]

[0593] Samples containing substantially only EM-11 showed a 1.4% decrease in transmittance and also failed the crystallization test. Therefore, it can be understood that such materials themselves may have reduced applicability in scenarios requiring a reduced tendency of the patterned coating 130 to crystallize. Doping of the host containing EM-11 with LiF resulted in a higher decrease in transmittance, but also substantially reduced the tendency of such patterned coating 130 to undergo crystallization. As a non-limiting example, it was found that even with a substantially low dopant concentration of approximately 5% LiF in EM-11, the crystallization properties of the patterned coating 130 were improved with only a slight increase in transmittance.

[0594] Similar experiments were conducted using metallic materials other than Ag as the deposit material 531, which includes but is not limited to Yb, Mg, Cu, and MgAg (volume ratio 1:9 to 9:1). Each of these similarly exhibited at least one of the following: high deposit contrast and low initial adhesion probability.

[0595] Although not shown in the tables above, samples with a similar structure to those used to obtain the results in Tables 8, 9, and 10 were also prepared and tested, except that EM-3 was used as the host instead of EM-11. For the dopant, EM-11 was used at various concentrations. Based on the results, the dopant mixture, which exhibited a higher deposition contrast than the host alone, did not appear to significantly improve the deposition contrast of the resulting patterning layer containing EM-3 as the host and EM-11 as the dopant.

[0596] Category 3: Dopant exhibits photoluminescence response In some non-limiting examples, the host and dopant may be characterized by at least one substantially similar material property and / or at least one substantially different material property, the material property may include, but is not limited to, initial adhesion probability, transmittance, deposition contrast, surface energy, melting point, sublimation temperature, cohesive energy, optical gap, refractive index, absorption coefficient, absorption or other optical effects, average layer thickness, molecular weight, and composition.

[0597] Sedimentary contrast In some non-limiting cases, the host may exhibit substantially high depositional contrast.

[0598] In some non-limiting cases, dopants can exhibit substantially high depositional contrast.

[0599] In some non-specific cases, dopants may exhibit substantially low depositional contrast. In some non-specific cases, dopants may function as non-personal characters (NPCs).

[0600] Surface energy In some non-limiting examples, the host surface energy may be at least one of the following: approximately 25 dynes / cm or less, approximately 21 dynes / cm or less, approximately 20 dynes / cm or less, approximately 19 dynes / cm or less, approximately 18 dynes / cm or less, approximately 17 dynes / cm or less, approximately 16 dynes / cm or less, approximately 15 dynes / cm or less, approximately 14 dynes / cm or less, and 13 dynes / cm or less.

[0601] In some non-limiting examples, the monomer skeleton units of the host may have at least one of the following surface tensions: at least about 25 dynes / cm, about 30 dynes / cm, about 40 dynes / cm, about 50 dynes / cm, about 75 dynes / cm, about 100 dynes / cm, about 150 dynes / cm, about 200 dynes / cm, about 250 dynes / cm, about 500 dynes / cm, about 1,000 dynes / cm, about 1,500 dynes / cm, and about 2,000 dynes / cm.

[0602] In some non-limiting examples, at least one functional group of the host monomer may have a low surface tension. In some non-limiting examples, at least one functional group of the monomer may have a surface tension of at least one of the following: about 25 dynes / cm or less, about 21 dynes / cm or less, about 20 dynes / cm or less, about 19 dynes / cm or less, about 18 dynes / cm or less, about 17 dynes / cm or less, about 16 dynes / cm or less, about 15 dynes / cm or less, about 14 dynes / cm or less, about 13 dynes / cm or less, about 12 dynes / cm or less, about 11 dynes / cm or less, and about 10 dynes / cm or less.

[0603] In some non-limiting cases, the dopant may exhibit a higher characteristic surface energy than the host. In some non-limiting cases, the dopant may exhibit a characteristic surface energy that is at least one greater than the host's characteristic surface energy by at least about 5 dynes / cm, about 10 dynes / cm, about 15 dynes / cm, about 20 dynes / cm, about 30 dynes / cm, and about 50 dynes / cm. In some non-limiting cases, the dopant may exhibit a characteristic surface energy that is at least one of at least about 25 dynes / cm, about 30 dynes / cm, about 35 dynes / cm, about 40 dynes / cm, and about 50 dynes / cm.

[0604] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially high surface energies may be applicable in some scenarios for detecting films of such materials using optical techniques.

[0605] Thermal properties In some non-limiting examples, the patterned coating 130 may include multiple materials exhibiting similar thermal properties, at least one of which exhibits photoluminescence.

[0606] melting point In some non-limiting examples, the host may have a melting point of at least one of about 130°C, about 150°C, about 200°C, and about 250°C. In some non-limiting examples, the host may have a melting point of at least one of about 100–350°C, about 130–320°C, about 150–300°C, and about 180–280°C.

[0607] In some non-limiting examples, the difference in melting points of multiple materials in the patterning coating 130, including but not limited to the absolute difference in melting points of the host and dopant, may be at least one of approximately 5°C or less, approximately 10°C or less, approximately 15°C or less, approximately 20°C or less, approximately 30°C or less, approximately 40°C or less, and approximately 50°C or less.

[0608] sublimation temperature In some non-limiting examples, the difference in sublimation temperatures of multiple materials in the patterning coating 130, including but not limited to the absolute value of the difference in sublimation temperatures between the host and the dopant, may be at least one of approximately 5°C or less, approximately 10°C or less, approximately 15°C or less, approximately 20°C or less, approximately 30°C or less, approximately 40°C or less, and approximately 50°C or less.

[0609] Optical gap or band gap In some non-limiting examples, the dopant may have a first optical gap, and the host may have a second optical gap. In some non-limiting examples, the second optical gap may be at least the first optical gap. In some non-limiting examples, the absolute value of the difference between the first optical gap and the second optical gap may be at least one of about 0.3 eV, about 0.5 eV, about 0.7 eV, about 1 eV, about 1.3 eV, about 1.5 eV, about 1.7 eV, about 2 eV, about 2.5 eV, and about 3 eV.

[0610] In some non-limiting examples, the first optical gap may be at least one of approximately 4.1 eV or less, approximately 3.5 eV or less, and approximately 3.4 eV or less.

[0611] In some non-limiting examples, the second optical gap may be at least one of approximately 3.4 eV, approximately 3.5 eV, approximately 4.1 eV, approximately 5 eV, and approximately 6.2 eV.

[0612] In some non-restrictive examples, at least one of the first optical gap and the second optical gap may correspond to the HOMO-LUMO gap.

[0613] Photoluminescence In some non-limiting examples, dopants may exhibit photoluminescence at wavelengths corresponding to at least one of the UV and visible spectra.

[0614] In some non-limiting examples, the host does not need to substantially exhibit photoluminescence at wavelengths that include, but are not limited to, any wavelengths corresponding to the visible spectrum.

[0615] In some non-limiting examples, the host may not substantially exhibit photoluminescence when exposed to EM radiation having at least one wavelength among approximately 300 nm, approximately 320 nm, approximately 350 nm, and approximately 365 nm, or longer wavelengths. In some non-limiting examples, the host may not exhibit any faint and / or substantially detectable absorption when exposed to such EM radiation.

[0616] In some non-limiting examples, the optical gap of the host may exceed the photon energy of the EM radiation emitted by the EM source, so that the host does not undergo photoexcitation when exposed to such radiation. Nevertheless, the patterning film 130 containing the host and dopant may exhibit photoluminescence when exposed to such radiation, due to the dopant's emission. Thus, in some non-limiting examples, the presence of the patterning film 130 can be readily detected and / or observed using routine characterization techniques, including but not limited to fluorescence microscopy, to confirm the extent of the patterning film 130's deposition and / or its lateral and longitudinal range.

[0617] Refractive index In some non-limiting examples, the refractive index of the host at at least one wavelength between approximately 460 nm and approximately 500 nm may be at least one of approximately 1.5 or less, approximately 1.45 or less, approximately 1.44 or less, approximately 1.43 or less, approximately 1.42 or less, and approximately 1.41 or less.

[0618] weight In some non-limiting examples, the molecular weight of each of the multiple materials of the patterning coating 130, including but not limited to the host and dopant, may be at least one of about 750 g / mol, about 1,000 g / mol, about 1,500 g / mol, about 2,000 g / mol, about 2,500 g / mol, and about 3,000 g / mol.

[0619] In some non-limiting examples, the molecular weight of each of the multiple materials in the patterning coating, including but not limited to the host and dopant, may be approximately 5,000 g / mol or less.

[0620] composition In some non-limiting cases, the concentration of the dopant in the patterning film 130, in some non-limiting cases, may be lower by weight than that of the host.

[0621] In some non-limiting examples, the patterning coating 130 may contain at least one of about 0.1% by weight, about 0.2% by weight, about 0.5% by weight, about 0.8% by weight, about 1% by weight, about 3% by weight, about 5% by weight, about 8% by weight, about 10% by weight, about 15% by weight, and about 20% by weight of the dopant. In some non-limiting examples, the patterning coating 130 may contain at least one of about 50% by weight or less, about 40% by weight or less, about 30% by weight or less, about 25% by weight or less, about 20% by weight or less, about 15% by weight or less, about 10% by weight or less, about 8% by weight or less, about 5% by weight or less, about 3% by weight or less, or about 1% by weight or less of the dopant. In some non-limiting examples, the remainder of the patterning coating 130 may substantially consist of the host.

[0622] While we do not wish to be bound by any particular theory, we can assume that dopants exhibiting a photoluminescence response may tend to contain high-surface-energy portions that may reduce the deposition contrast exhibited by the patterning film 130 formed by mixing such dopants with a host. Thus, in some non-limiting examples, the patterning film 130 may contain at least one of about 5% by weight or less, about 3% by weight or less, about 2% by weight or less, about 1% by weight or less, about 0.5% by weight or less, and about 0.1% by weight or less of the dopant.

[0623] In some non-limiting examples, at least one of the materials of the patterning coating 130, which may include a host and / or dopant, may include at least one of F atoms and Si atoms. In some non-limiting examples, at least one of the host and dopant may include at least one of F and Si. In some non-limiting examples, the host may include at least one of F and Si. In some non-limiting examples, both the host and dopant may include F. In some non-limiting examples, both the host and dopant may include Si. In some non-limiting examples, each of the host and dopant may include at least one of F and Si.

[0624] In some non-limiting examples, at least one of the host and dopant of the patterning film 130 may be an oligomer. In some non-limiting examples, the host may comprise a first oligomer and the dopant may comprise a second oligomer. In some non-limiting examples, each of the first and second oligomers may comprise a plurality of monomers.

[0625] In some non-restrictive examples, the host may substantially contain the first oligomer, and the dopant may substantially contain the second oligomer.

[0626] In some non-limiting examples, the patterning film 130 may include a third material different from both the host and the dopant. In some non-limiting examples, the third material may include a third oligomer. In some non-limiting examples, the third material may substantially include a third oligomer. In some non-limiting examples, each of the first oligomer, the second oligomer, and the third oligomer may include at least one common monomer.

[0627] In some non-limiting examples, the first and second oligomers may contain at least one common monomer.

[0628] In some non-limiting examples, at least one part of the molecular structure of the first oligomer and the second oligomer can be represented by formula (I). In some non-limiting examples, each of the first oligomer and the second oligomer can be independently represented by formula (I).

[0629] In some non-limiting examples, monomers may contain functional groups. In some non-limiting examples, at least one functional group of a monomer may contain at least one of F and Si. Examples of such non-limiting functional groups include fluorocarbon groups and siloxane groups.

[0630] In some non-limiting examples, the monomer may contain at least one of the CF2 group and the CF2H group. In some non-limiting examples, the monomer may contain at least one of the CF2 group and the CF3 group. In some non-limiting examples, the monomer may contain at least one of the C and O.

[0631] In some non-limiting examples, at least one of the first and second oligomer molecular structures may contain multiple different monomers, that is, such molecular structures may contain monomer species having at least one of different molecular compositions and molecular structures, including but not limited to those represented by at least one of formulas (III) and (IV).

[0632] In some non-restrictive examples, monomers can be represented by formula (V).

[0633] In some non-limiting examples, the monomer backbone unit may contain at least one of P and N. An example of such a monomer backbone unit is phosphazene. In some non-limiting examples, at least a portion of the molecular structure of at least one of the first oligomer and / or the second oligomer can be represented by formula (VI). In some non-limiting examples, the first oligomer and at least one of the second oligomer are cyclophosphazene. In some non-limiting examples, the molecular structure of cyclophosphazene can be represented by formula (VI).

[0634] In some non-restrictive cases, at least a portion of the molecular structure of at least one of the first oligomer and / or the second oligomer can be represented by formula (VII). In some non-restrictive cases, the molecular structure of the first oligomer can be represented by formula (VII), where n is 4 and it is a tetramer. In some non-restrictive cases, the molecular structure of the second oligomer can be represented by formula (VII), where n is 3 and it is a trimer. In some non-restrictive cases, the molecular structure according to formula (VII) is a cyclophosphazene.

[0635] In some non-limiting examples, the fluoroalkyl groups R of the first and second oligomers are used. f These are the same. In some non-restrictive examples, the fluoroalkyl group R in formula (VII) f It can be expressed by formula (VIII). In some non-restrictive examples, the molecular formulas representing the first oligomer and the second oligomer have the same value of q and different values ​​of n.

[0636] While several non-limiting examples with respect to the host and dopant are described herein, it will be understood that the patterning coating 130 may further include at least one additional material. In some non-limiting examples, descriptions of the molecular structure and at least one of any other properties of the host, dopant, first oligomer, and second oligomer may be applicable to at least one such additional material of the patterning coating 130.

[0637] Thermal properties, photoluminescence and / or composition In some non-limiting examples, the patterned coating 130 may comprise several materials exhibiting similar thermal properties, at least one of which exhibits photoluminescence. In some non-limiting examples, at least one of such materials may comprise at least one of F and Si.

[0638] In some non-limiting examples, the patterned coating 130 may comprise several materials exhibiting similar thermal properties, at least one of which exhibits photoluminescence at a wavelength of at least about 365 nm when excited by EM radiation having an excitation wavelength of about 365 nm, and at least one of which may comprise at least one of F and Si.

[0639] In some non-limiting examples, the patterning coating 130 may comprise a plurality of materials having at least one common element and at least one common substructure, where at least one of the materials exhibits photoluminescence at a wavelength of at least about 365 nm when exposed to EM radiation having an excitation wavelength of about 365 nm. In some non-limiting examples, at least one of such materials may comprise at least one of F and Si. In some non-limiting examples, the at least one common element may comprise at least one of F and Si. In some non-limiting examples, the at least one common substructure may comprise at least one of fluorocarbon and / or siloxyl.

[0640] Examples To evaluate the properties of specific exemplary patterned coatings 130, a series of samples were prepared by depositing a layer of organic material, which can be used as an HTL material, to a thickness of approximately 20 nm in a vacuum, and then depositing patterned coatings 130 having various compositions, as summarized in Table 11, on top of the organic material layer.

[0641] [Table 12]

[0642] In this embodiment, EM-10 was selected so that, when deposited as a thin film, it can exhibit a low initial adhesion probability to the deposition of a deposition material 531 containing at least one of the Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg.

[0643] In this embodiment, PL material 1 and PL material 2 were selected such that, when deposited as thin films, each of them exhibits photoluminescence detectable by standard optical measurement techniques, including but not limited to fluorescence microscopy.

[0644] Table 11 shows that sample 11 is a comparative sample containing only EM-10, samples 14 and 15 are comparative samples containing only PL material 1 and PL material 2, respectively, and sample 16 is a comparative sample in which the patterning film 130 was not deposited on a layer of organic material. Samples 12 and 13 are exemplary samples in which the patterning film 130 was formed by co-depositing EM-10 as a host with PL material 1 and PL material 2, respectively, to form a film in which the PL material is present as a dopant at a concentration of 0.5 volume%.

[0645] The photoluminescence responses of samples 11, 12, 13, and 16 were measured and plotted as shown in Figure 2. The photoluminescence intensity of sample 11 was observed to be identical to that of sample 16, suggesting that EM-10 does not exhibit photoluminescence in the detected wavelength range. For simplicity of explanation and considering this result, the photoluminescence intensity of sample 16 is not shown in Figure 2. For samples 12 and 13, photoluminescence was detected at wavelengths of approximately 500–600 nm.

[0646] Next, each of samples 11 to 16 was subjected to open mask deposition of Yb, followed by Ag-containing deposition material 531, by exposing the surface of the patterned coating 130 of these samples, formed from the corresponding materials described in Table 13, to a Yb vapor flux until a reference thickness of approximately 1 nm was reached. Subsequently, the surface was subjected to open mask deposition of Ag, by exposing the surface to an Ag vapor flux until a reference thickness of approximately 12 nm was reached.

[0647] Once the samples were prepared, light transmittance measurements were performed to determine the relative amount of at least one form of deposited material 531, consisting of Yb and Ag, deposited on the surface of the patterned coating 130.

[0648] Those skilled in the art will understand that a sample with relatively little and / or no deposited material 531, including but not limited to metals / alloys containing at least one of Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg, may be substantially transparent, while a sample with a substantial amount of metal / alloy deposited, including but not limited to a closing film 150, may exhibit substantially reduced transmittance in some non-limiting examples. Thus, the relative performance of various exemplary coatings as patterning films 130 can be evaluated by measuring the transmittance through a sample, and this transmittance may positively correlate with the amount and / or average thickness of deposited material 531, including but not limited to metals / alloys containing at least one of Ag-containing substances, including but not limited to Yb, Ag, Mg, and MgAg, deposited thereon, as a thin metal film, including but not limited to when formed as a closing film 150, may exhibit high absorption of EM radiation.

[0649] After preparing each sample as disclosed above, the transmittance reduction (%) at a wavelength of approximately 460 nm was measured and summarized in Table 12.

[0650] [Table 13]

[0651] The decrease in transmittance (%) for each sample listed in Table 12 was determined by measuring the transmittance through the sample before and after exposure to a vapor flux of the deposited material 531 in the form of Yb, followed by Ag, and expressing the decrease in transmittance as a percentage.

[0652] The decrease in transmittance (%) as a function of wavelength for each of the samples 11(310), 12(320), 13(330), 14(340), 15(350), and 16(360) was measured and plotted as shown in Figure 3.

[0653] Samples 11, 12, and 13 each exhibited relatively low transmittance reductions. Therefore, it can be inferred that the patterning coating 130 applied to these samples tends to exhibit substantially high deposition contrast.

[0654] In contrast, samples 14, 15, and 16 each exhibited a substantial decrease in transmittance of nearly 50%. Therefore, it can be inferred that the patterning coating 130 applied to these samples tended not to function as a NIC. In some non-limiting cases, it can be inferred that the patterning coating 130 applied to these samples tended to exhibit substantially low deposition contrast, including but not limited to functioning as an NPC.

[0655] Additionally, the photoluminescence response of each of the samples 11, 12, and 13 was evaluated after exposure to a vapor flux of the deposited material 531 in the form of Yb, followed by Ag. Sample 11, in which the patterned coating 130 contained substantially only EM-10, was found to exhibit virtually no photoluminescence response. However, both samples 12 and 13 were found to exhibit a substantial photoluminescence response.

[0656] Therefore, in some non-limiting cases, it can be concluded that by providing a patterned coating 130 that includes a host which tends to function as a NIC but does not exhibit any substantial photoluminescence response, and a dopant which does not tend to function as a NIC but exhibits a substantial photoluminescence response, it is possible to provide both a substantial photoluminescence response and a tendency to function as a NIC.

[0657] Category 4: Dopants create heterogeneity and generate NPs. In some non-limiting examples, the patterning film 130 may be doped, coated, and / or complemented with another material that can function as a seed or heterogeneity to have and / or provide a deposited material 531 having at least one nucleation site for forming at least one NP thereon, depending on the patterning material 411 used and / or the deposition environment.

[0658] In some non-limiting examples, such other materials may include, in non-limiting examples, metallic or non-metallic elements, for example, materials containing, in no limiting terms, at least one of O, S, N, and C, whose presence may otherwise constitute trace contaminants in the source material, the equipment used for deposition, and / or the vacuum chamber environment.

[0659] Therefore, in some non-limiting examples, other materials including but not limited to elemental materials may be considered dopants, and the doped patterning coating 130 may be considered a host.

[0660] In some non-limiting examples, such other materials may be deposited in layers that are small portions of a single layer in order to avoid forming their closure film 150. Rather, the deposition of such other materials may tend to be separated laterally so as to form separate nucleation sites for the deposited material 531.

[0661] In some non-limiting examples, such other materials or dopants may include NPC720.

[0662] Those skilled in the art will understand that, in some non-limiting examples, dopants that fall into this category as materials that can function as seeds or heterogeneities to facilitate the formation of at least one nucleation site for forming at least one NP on the deposited material 531 may also fall into one of the aforementioned categories.

[0663] sedimentary layer In some non-limiting examples, if the lateral extent of the patterning coating 130 is limited to a first portion 101, then in a second portion 102 of the lateral surface of the device 100, a deposit layer 140 containing the deposit material 531 may be disposed as a closing coating 150 on the exposed layer surface 11 of the underlying layer.

[0664] In some non-limiting examples, the average thickness of the deposited layer 140 may be at least one of approximately 2 nm, 5 nm, 8 nm, 10 nm, 15 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, and 100 nm.

[0665] In some non-limiting examples, the sedimentary layer 140 may contain sedimentary material 531.

[0666] In some non-limiting examples, the sedimentary material 531 may be the same as the underlying layer and / or may contain at least one common metal with the underlying layer.

[0667] In some non-limiting examples, the deposited material 531 may contain elements selected from at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, Zn, Cd, Sn, and Y. In some non-limiting examples, the elements may contain at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and Mg. In some non-limiting examples, the elements may contain at least one of Cu, Ag, and Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the elements may contain at least one of Mg, Zn, Cd, and Yb. In some non-limiting examples, the elements may contain at least one of Mg, Ag, Al, Yb, and Li. In some non-limiting examples, the elements may contain at least one of Mg, Ag, and Yb. In some non-limiting examples, the element may include at least one of Mg and Ag. In some non-limiting examples, the element may be Ag.

[0668] In some non-limiting examples, the deposit material 531 may be a pure metal and / or may contain a pure metal. In some non-limiting examples, the deposit material 531 may be at least one of pure Ag and substantially pure Ag. In some non-limiting examples, substantially pure Ag may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%. In some non-limiting examples, the deposit material 531 may be at least one of pure Mg and substantially pure Mg. In some non-limiting examples, substantially pure Mg may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%.

[0669] In some non-limiting examples, the deposited material 531 may include an alloy. In some non-limiting examples, the alloy may be at least one of an Ag-containing alloy, an Mg-containing alloy, and an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition that can range from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0670] In some non-limiting examples, the deposited material 531 may contain other metals instead of Ag, and / or in combination with Ag. In some non-limiting examples, the deposited material 531 may contain alloys of Ag with at least one other metal. In some non-limiting examples, the deposited material 531 may contain alloys of Ag with at least one of Mg and Yb. In some non-limiting examples, such alloys may be binary alloys having a composition of about 5 to 95 volume percent Ag, with the remainder being another metal. In some non-limiting examples, the deposited material 531 may contain Ag and Mg. In some non-limiting examples, the deposited material 531 may contain Ag:Mg alloys having a composition of about 1:10 to 10:1 by volume. In some non-limiting examples, the deposited material 531 may contain Ag and Yb. In some non-limiting examples, the deposited material 531 may contain Yb:Ag alloys having a composition of about 1:20 to 10:1 by volume. In some non-limiting examples, the deposited material 531 may contain Mg and Yb. In some non-limiting examples, the deposited material 531 may contain an Mg:Yb alloy. In some non-limiting examples, the deposited material 531 may contain Ag, Mg, and Yb. In some non-limiting examples, the deposited layer 140 may contain an Ag:Mg:Yb alloy.

[0671] In some non-limiting examples, the deposited layer 140 may contain at least one additional element. In some non-limiting examples, such additional element may be a nonmetallic element. In some non-limiting examples, the nonmetallic element may be at least one of O, S, N, and C. In some non-limiting examples, it will be understood by those skilled in the art that such additional element may be incorporated into the deposited layer 140 as a contaminant due to its presence in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the concentration of such additional element may be limited to below a threshold concentration. In some non-limiting examples, such additional element may form compounds with other elements in the deposited layer 140. In some non-limiting examples, the concentration of nonmetallic elements in the sedimentary material 531 may be at least one of approximately 1% or less, approximately 0.1% or less, approximately 0.01% or less, approximately 0.001% or less, approximately 0.0001% or less, approximately 0.00001% or less, approximately 0.000001% or less, and approximately 0.0000001% or less. In some non-limiting examples, the sedimentary layer 140 may have a composition in which the total amount of O and C in it may be at least one of approximately 10% or less, approximately 5% or less, approximately 1% or less, approximately 0.1% or less, approximately 0.01% or less, approximately 0.001% or less, approximately 0.0001% or less, approximately 0.00001% or less, approximately 0.000001% or less, and approximately 0.0000001% or less.

[0672] Here, it is somewhat surprising to find that selective deposition of the deposition layer 140 can be facilitated by reducing the concentration of certain nonmetallic elements in the deposition layer 140, particularly when the deposition layer 140 may be substantially composed of metals and / or metallic alloys. While we do not wish to be bound by any particular theory, as a non-limiting example, it can be hypothesized that certain nonmetallic elements, such as at least one of O and C, when present in the vapor flux 532 of the deposition layer 140, and / or in the deposition chamber, and / or in the environment, can be deposited on the surface of the patterning film 130 and act as nucleation sites for the metallic elements of the deposition layer 140. It can be hypothesized that reducing the concentration of such nonmetallic elements that can act as nucleation sites can facilitate reducing the amount of deposition material 531 deposited on the exposed layer surface 11 of the patterning film 130.

[0673] In some non-limiting examples, the deposited material 531 deposited on the exposed layer surface 11 of the device 100 may, in some non-limiting examples, generally have dielectric properties selected to promote and / or increase the absorption of EM radiation in a wavelength (sub)range of the EM spectrum, including but not limited to its subrange and / or wavelengths, including the visible spectrum and / or certain colors.

[0674] In some non-limiting examples, the deposited layer 140 may comprise multiple layers of deposited material 531. In some non-limiting examples, the deposited material 531 of the first layer of multiple layers may differ from the deposited material 531 of the second layer of multiple layers. In some non-limiting examples, the deposited layer 140 may comprise a multilayer coating. In some non-limiting examples, such a multilayer coating may be at least one of Yb / Ag, Yb / Mg, Yb / Mg:Ag, Yb / Yb:Ag, Yb / Ag / Mg, and Yb / Mg / Ag.

[0675] In some non-limiting examples, the deposited material 531 may contain metals having at least one bond dissociation energy among those with approximately 300 kJ / mol or less, approximately 200 kJ / mol or less, approximately 165 kJ / mol or less, approximately 150 kJ / mol or less, approximately 100 kJ / mol or less, approximately 50 kJ / mol or less, and approximately 20 kJ / mol or less.

[0676] In some non-limiting examples, the deposited material 531 may contain metals having electronegativity of at least one of about 1.4 or less, about 1.3 or less, and about 1.2 or less.

[0677] In some non-limiting examples, the sheet resistance of the deposited layer 140 may generally correspond to the sheet resistance of the deposited layer 140 measured or determined separately from other components, layers, and / or parts of the device 100. In some non-limiting examples, the deposited layer 140 may be formed as a thin film. Thus, in some non-limiting examples, the characteristic sheet resistance of the deposited layer 140 may be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance may be at least one of approximately 10 Ω / □ or less, approximately 5 Ω / □ or less, approximately 1 Ω / □ or less, approximately 0.5 Ω / □ or less, approximately 0.2 Ω / □ or less, and approximately 0.1 Ω / □ or less.

[0678] In some non-limiting examples, the deposit layer 140 may be arranged in a pattern that can be defined by at least one region substantially lacking a closing coating 150 of the deposit layer 140. In some non-limiting examples, at least one region may separate the deposit layer 140 into a plurality of separate fragments. In some non-limiting examples, each separate fragment of the deposit layer 140 may be a separate second part 102. In some non-limiting examples, the plurality of separate fragments of the deposit layer 140 may be physically separated from each other laterally. In some non-limiting examples, at least two of such plurality of separate fragments of the deposit layer 140 may be electrically coupled. In some non-limiting examples, at least two of such plurality of separate fragments of the deposit layer 140 may each be electrically coupled to a common conductive layer or coating, non-limitingly including an underlying layer, to allow the flow of current between them. In some non-limiting examples, at least two of such plurality of separate fragments of the deposit layer 140 may be electrically insulated from each other.

[0679] Selective deposition using patterned coatings Figure 4 is an illustrative schematic diagram illustrating a non-limiting example of a deposition process generally shown in 400 within a chamber 410 for selectively depositing a patterning film 130 onto a first portion 101 of the exposed layer surface 11 of the underlying layer.

[0680] In process 400, a certain amount of patterning material 411 can be heated under vacuum to cause the patterning material 411 to evaporate and / or sublimate. In some non-limiting examples, the patterning material 411 may include a material used to form the patterning film 130, both entirely and / or substantially. In some non-limiting examples, such a material may include an organic material.

[0681] The vapor flux 412 of the patterning material 411 can flow through the chamber 410 toward the exposed layer surface 11, including in the direction indicated by the arrow 41. When the vapor flux 412 is incident on the exposed layer surface 11 of the substrate surface, a patterning film 130 can be formed thereon.

[0682] In some non-limiting examples, as shown in the figure for process 400, the patterning film 130 may be selectively deposited on only a portion of the exposed layer surface 11, or in the example described, a first portion 101 of the substrate surface, by interposing a shadow mask 415, which may be an FMM in some non-limiting examples, between the vapor flux 412 and the exposed layer surface 11 of the substrate surface. In some non-limiting examples, such a shadow mask 415 may be used to form relatively small shapes having a shape size of about tens of microns or less.

[0683] The shadow mask 415 may have at least one opening 416 extending through it, allowing a portion of the vapor flux 412 to pass through the opening 416 and be incident on the exposed layer surface 11 to form a patterning film 130. If the vapor flux 412 is incident on the surface 417 of the shadow mask 415 without passing through the opening 416, it is prevented from being disposed on the exposed layer surface 11 and forming a patterning film 130. In some non-limiting examples, the shadow mask 415 may be configured such that vapor flux 412 passing through the opening 416 can be incident on a first portion 101 but not on a second portion 102. Thus, the second portion 102 of the exposed layer surface 11 of the underlying layer may substantially lack a patterning film 130. In some non-limiting examples (not shown), patterning material 411 incident on the shadow mask 415 may be deposited on its surface 417.

[0684] Therefore, once the deposition of the patterning film 130 is complete, a patterned surface can be generated.

[0685] Figure 5 shows a chamber 410 for selectively depositing a closing film 150 of a deposited layer 140 onto a second portion 102 of the exposed layer surface 11 of the substrate, which substantially lacks the patterning film 130 selectively deposited on the first portion 101, including but not limited to the evaporation process 400 of Figure 4. aThis is an illustrative schematic diagram illustrating a non-limiting example of the results of the evaporation process, which are generally shown.

[0686] In some non-limiting examples, the deposit layer 140 may include a deposit material 531 containing at least one metal. Typically, it will be understood by those skilled in the art that the vaporization temperature of organic materials is lower than that of metals that may be used as the deposit material 531.

[0687] Therefore, in some non-limiting examples, there may be fewer constraints when using the shadow mask 415 to selectively deposit a patterned film 130 in a certain pattern compared to directly patterning the deposited layer 140 using such a shadow mask 415.

[0688] When the patterning coating 130 is deposited on the first portion 101 of the exposed layer surface 11 of the substrate surface, the sealing coating 150 of the deposited material 531 can be deposited as a deposited layer 140 on the second portion 102 of the exposed layer surface 11 of the substrate layer which substantially lacks the patterning coating 130.

[0689] Process 500 a Then, a certain amount of the deposit material 531 can be heated under vacuum to evaporate and / or sublimate it. In some non-limiting examples, the deposit material 531 may contain all and / or substantially the material used to form the deposit layer 140.

[0690] The vapor flux 532 of the deposited material 531 may be directed inward into the chamber 410, including in the direction indicated by the arrow 51, toward the exposed layer surfaces 11 of the first portion 101 and the second portion 102. When the vapor flux 532 is incident on the second portion 102 of the exposed layer surface 11, a closure film 150 of the deposited material 531 may be formed thereon as the deposited layer 140.

[0691] In some non-limiting examples, the deposition of the deposition material 531 may be carried out using open-mask and / or mask-free deposition processes.

[0692] In contrast to the shadow mask 415, it will be understood by those skilled in the art that the shape size of the open mask may be approximately equivalent to the size of the device 100 to be manufactured.

[0693] Those skilled in the art will understand that in some non-limiting examples, the use of an open mask may be omitted. In some non-limiting examples, the open mask deposition process described herein may instead be carried out without an open mask so that the entire surface 11 of the target exposed layer can be exposed.

[0694] In fact, as shown in Figure 5, the vapor flux 532 can be incident on both the exposed layer surface 11 of the patterning coating 130 over the first portion 101 and the exposed layer surface 11 of the substrate over the second portion 102 which substantially lacks the patterning coating 130.

[0695] The exposed layer surface 11 of the patterning coating 130 in the first portion 101 may exhibit a relatively low initial adhesion probability for the deposition of the deposit material 531 compared to the exposed layer surface 11 of the substrate in the second portion 102. Therefore, the deposit layer 140 can be substantially selectively deposited only on the exposed layer surface 11 of the substrate in the second portion 102, which substantially lacks the patterning coating 130. In contrast, vapor flux 532 incident on the exposed layer surface 11 of the patterning coating 130 across the first portion 101 may tend not to deposit (as shown in 533), and the exposed layer surface 11 of the patterning coating 130 across the first portion 101 may substantially lack the closing coating 150 of the deposit layer 140.

[0696] In some non-limiting examples, the initial deposition rate of vapor flux 532 on the exposed layer surface 11 of the underlayment in the second portion 102 may be at least one of approximately 200 times, approximately 550 times, approximately 900 times, approximately 1,000 times, approximately 1,500 times, approximately 1,900 times, and approximately 2,000 times the initial deposition rate of vapor flux 532 on the exposed layer surface 11 of the patterning film 130 in the first portion 101.

[0697] Therefore, the combination of selective deposition of the patterning film 130 and / or mask-free deposition of the deposition material 531 in Figure 4, using a shadow mask 415 and an open mask, is equivalent to version 500 of device 100 shown in Figure 5. a This could lead to...

[0698] Following the selective deposition of the patterning film 130 over the first portion 101, the closure film 150 of the deposited material 531 may, in some non-limiting examples, be deposited on the device 100 as a deposited layer 140 using an open-mask and / or mask-free deposition process, but may remain substantially only within the second portion 102 where the patterning film 130 is substantially absent.

[0699] The patterned coating 130 can provide an exposed layer surface 11 within the first portion 101 that has a relatively low initial adhesion probability to the deposition of the deposition material 531, which is substantially less than or equal to the initial adhesion probability to the deposition of the deposition material 531 to the exposed layer surface 11 of the underlying layer of the device 100 within the second portion 102.

[0700] Therefore, the first portion 101 may substantially lack a sealing film 150 of the deposited material 531.

[0701] While this disclosure envisions the patterned deposition of a patterned coating 130 by a deposition process with a shadow mask 415, those skilled in the art will understand that in some non-limiting examples this can be achieved by any preferred deposition process, including, but not limited to, a microcontact printing process.

[0702] While this disclosure intends for the patterning coating 130 to be a NIC, those skilled in the art will understand that in some non-limiting examples the patterning coating 130 may be an NPC 720. In such examples, the portion to which the NPC 720 is deposited (e.g., a non-limiting first portion 101) may, in some non-limiting examples, have a closure coating 150 of the deposited material 531, while the other portion (e.g., a non-limiting second portion 102) may substantially lack a closure coating 150 of the deposited material 531.

[0703] In some non-limiting examples, the average thickness of the patterning film 130 and the subsequently deposited layer 140 may vary according to various parameters, including, but not limited to, a given application and a given performance characteristic. In some non-limiting examples, the average thickness of the patterning film 130 may be equal to, and / or substantially less than, the average thickness of the subsequently deposited layer 140. Using a relatively thin patterning film 130 to achieve selective patterning of the deposited layer 140 may be preferable to provide a flexible device 100. In some non-limiting examples, the relatively thin patterning film 130 may provide a relatively flat surface on which a barrier film or other thin film encapsulation (TFE) layer 2350 (Figure 23B) can be deposited. In some non-limiting examples, providing such a relatively flat surface for the application of such a barrier film 2050 can increase its adhesion to such a surface.

[0704] Edge effect Patterning coating transition region Looking at Figure 6A, we see that device 100 version 600 in Figure 1 a This can be shown, and the interface between the patterned coating 130 of the first portion 101 and the deposited layer 140 of the second portion 102 can be shown in an exaggerated form. Figure 6B shows device 600 a This can be represented in a plane.

[0705] As can be better understood in FIG. 6B, in some non-limiting examples, the patterning film 130 within the first portion 101 may be surrounded on all sides by the deposition layer 140 within the second portion 102, whereby the first portion 101 may have a boundary defined by a further extent or edge 615 of the patterning film 130 on the side faces along each lateral axis. In some non-limiting examples, the patterning film edge 615 on the side face may be defined by the outer periphery of the first portion 101 on such a face.

[0706] In some non-limiting examples, the first portion 101 may, on the side faces, include at least one patterning film transition region 101 t and the thickness of the patterning film 130 may transition to a thickness reduced from the maximum thickness. The extent of the first portion 101 that does not exhibit such a transition may be identified as the patterning film non-transition portion 101 n of the first portion 101. In some non-limiting examples, the patterning film 130 may form a substantially closed film 150 in the patterning film non-transition portion 101 n of the first portion 101.

[0707] In some non-limiting examples, the patterning film transition region 101 t may extend on the side face between the patterning film non-transition portion 101 n of the first portion 101 and the patterning film edge 615.

[0708] In some non-limiting examples, in a plane, the patterning film transition region 101 t may surround the patterning film non-transition portion 101 n of the first portion 101 and / or may extend along its outer periphery.

[0709] In some non-limiting examples, along at least one lateral axis, the patterning film non-transition portion 101 n may occupy the entire first portion 101, whereby the patterning film transition region 101t does not exist between it and the second portion 102.

[0710] As described in FIG. 6A, in some non-limiting examples, the patterned film 130 of the first portion 101 may be within at least one of the ranges of about 1 to 100 nm, about 2 to 50 nm, about 3 to 30 nm, about 4 to 20 nm, about 5 to 15 nm, about 5 to 10 nm, or about 1 to 10 nm, the non-transition portion 101 of the patterned film of the first portion 101 n may have an average film thickness d2. In some non-limiting examples, the non-transition portion 101 of the patterned film of the first portion 101 n the average film thickness d2 of the patterned film 130 in may be substantially the same or constant throughout. In some non-limiting examples, the average layer thickness d2 of the patterned film 130 is within at least one of about 95% or about 90% of the average film thickness d2 of the non-transition portion 101 of the patterned film n and may remain within.

[0711] In some non-limiting examples, the average film thickness d2 may be about 1 to 100 nm. In some non-limiting examples, the average film thickness d2 may be at least one of less than or equal to about 80 nm, less than or equal to about 60 nm, less than or equal to about 50 nm, less than or equal to about 40 nm, less than or equal to about 30 nm, less than or equal to about 20 nm, less than or equal to about 15 nm, or less than or equal to about 10 nm. In some non-limiting examples, the average film thickness d2 of the patterned film 130 may exceed at least one of about 3 nm, about 5 nm, or about 8 nm.

[0712] In some non-limiting examples, the non-transition portion 101 of the patterned film of the first portion 101 n the average film thickness d2 of the patterned film 130 in may be less than or equal to about 10 nm. Without wishing to be bound by any particular theory, somewhat surprisingly, the average film thickness d2 of the patterned film 130, which is not zero but less than or equal to about 10 nm, in at least some non-limiting examples, the non-transition portion 101 of the patterned film of the first portion 101 greater than 10 nm nFor a patterning film 130 having an average film thickness d2, it has been found that, as a non-limiting example, it may offer certain advantages for achieving an enhanced patterning contrast in the deposited layer 140.

[0713] In some non-limiting examples, the patterned coating 130 is a patterned coating transition region 101 t The patterning film thickness may decrease from maximum to minimum within the first portion 101. In some non-limiting examples, the maximum value is the patterning film transition region 101 of the first portion 101. t and patterned film non-transition portion 101 n It may be located at and / or adjacent to the boundary between the two. In some non-limiting examples, the minimum value may be at and / or adjacent to the patterned film edge 615. In some non-limiting examples, the maximum value may be at the non-transition portion 101 of the patterned film of the first portion 101. n The average film thickness d2 may be in the first portion 101 of the patterned film non-transition portion 101. n The minimum value may be at least one of approximately 95% or less of the average film thickness d2, or approximately 90% or less. In some non-limiting examples, the minimum value may be in the range of approximately 0 to 0.1 nm.

[0714] In some non-limiting examples, the patterned film transition region 101 t The patterned coating thickness profile may be inclined and / or follow a gradient. In some non-limiting examples, such a profile may be tapered. In some non-limiting examples, the taper may follow a linear, nonlinear, parabolic, and / or exponentially decaying profile.

[0715] In some non-limiting examples, the patterned coating 130 is a patterned coating transition region 101 t The underlying layer can be completely covered. In some non-limiting examples, at least a portion of the underlying layer is the patterning coating transition region 101 tIt may remain uncovered by the patterning film 130 inside. In some non-limiting examples, the patterning film 130 is located in the patterning film transition region 101 t at least a portion of and / or patterning film non-transition region 101 n This may include at least a substantial sealing coating 150.

[0716] In some non-limiting examples, the patterned coating 130 is a patterned coating transition region 101 t at least a portion of and / or patterning coating non-transition portion 101 n The discontinuous layer 170 may be included in at least a portion of it.

[0717] In some non-limiting examples, at least a portion of the patterning coating 130 within the first portion 101 may substantially lack the sealing coating 150 of the deposited layer 140. In some non-limiting examples, at least a portion of the exposed layer surface 11 of the first portion 101 may substantially lack the sealing coating 150 of the deposited layer 140 or the deposited material 531.

[0718] In some non-limiting examples, the patterned coating non-transition portion 101 is located along at least one lateral axis, including the X-axis, but is not limited to this example. n The patterning coating transition region 101 may have a width of w1. t It may have a width of w2. In some non-limiting examples, the patterned film non-transition portion 101 n In some non-limiting examples, the cross-sectional area may be approximated by multiplying the average film thickness d2 by the width w1. In some non-limiting examples, the patterning film transition region 101 t In some non-limiting examples, the patterning film transition region 101 t It may have a cross-sectional area that can be approximated by multiplying the average film thickness over a certain distance by a width w1.

[0719] In some non-restrictive examples, w1 may be greater than w2. In some non-restrictive examples, the quotient w1 / w2 may be at least one of approximately 5, approximately 10, approximately 20, approximately 50, approximately 100, approximately 500, approximately 1,000, approximately 1,500, approximately 5,000, approximately 10,000, approximately 50,000, or approximately 100,000.

[0720] In some non-limiting examples, at least one of w1 and w2 may exceed the average film thickness d1 of the substrate surface.

[0721] In some non-restrictive cases, at least one of w1 and w2 may be greater than d2. In some non-restrictive cases, both w1 and w2 may be greater than d2. In some non-restrictive cases, both w1 and w2 may be greater than d1, and d1 may be greater than d2.

[0722] Sedimentary layer transition region As better seen in Figure 6B, in some non-limiting examples, the patterning coating 130 in the first portion 101 may be surrounded by the sedimentary layer 140 in the second portion 102 such that the second portion 102 has a boundary defined by a further extent of the sedimentary layer 140 on the lateral plane along each lateral axis or by an edge 635. In some non-limiting examples, the sedimentary layer edge 635 on the lateral plane may be defined by the outer perimeter of the second portion 102 on such plane.

[0723] In some non-limiting examples, the second portion 102 is, in the lateral direction, at least one sedimentary layer transition region 102 t This may include the fact that the thickness of the sedimentary layer 140 may transition from a maximum thickness to a reduced thickness. The portion of the second portion 102 that does not show such a transition is the non-transition portion 102 of the sedimentary layer of the second portion 102. n It can be identified as: In some non-limiting examples, the sedimentary layer 140 is the non-transitional portion 102 of the sedimentary layer of the second portion 102. n A substantial sealing film 150 can be formed.

[0724] In some non-restrictive examples, in a plane, the sedimentary layer transition region 102 t In the lateral direction, the second portion 102 is the non-transition portion 102 of the sedimentary layer. n It may extend between the sedimentary layer edge 635.

[0725] In some non-restrictive examples, in a plane, the sedimentary layer transition region 102 t This is the non-transition portion 102 of the second part 102 of the sedimentary layer. n It may surround and / or extend along its outer perimeter.

[0726] In some non-limiting examples, along at least one lateral axis, the non-transition portion 102 of the second portion 102 of the sedimentary layer n Between it and the first part 101 is a sedimentary layer transition region 102 t The entirety of the second part 102 may be occupied in such a way that there is no such thing as.

[0727] As illustrated in Figure 6A, in some non-limiting examples, the depositional layer 140 may be within the range of at least one of approximately 1-500 nm, approximately 5-200 nm, approximately 5-40 nm, approximately 10-30 nm, or approximately 10-100 nm, the non-transition portion 102 of the depositional layer of the second portion 102. n The average film thickness d3 may be such that the second portion 102 has a non-transition portion 102 of the deposited layer. t The average film thickness d3 of the deposited layer 140 can be substantially the same or constant throughout.

[0728] In some non-limiting examples, d3 may exceed the average film thickness d1 of the substrate surface.

[0729] In some non-limiting examples, the quotient d3 / d1 may be at least one of approximately 1.5, approximately 2, 5, approximately 10, approximately 20, approximately 50, or approximately 100. In some non-limiting examples, the quotient d3 / d1 may be in the range of at least one of approximately 0.1 to 10 or approximately 0.2 to 40.

[0730] In some non-limiting examples, d3 may exceed the average film thickness d2 of the patterned coating 130.

[0731] In some non-limiting examples, the quotient d3 / d2 may be at least one of approximately 1.5, approximately 2, 5, approximately 10, approximately 20, approximately 50, or approximately 100. In some non-limiting examples, the quotient d3 / d2 may be in the range of at least one of approximately 0.2 to 10 or approximately 0.5 to 40.

[0732] In some non-restrictive cases, d3 may be greater than d2, and d2 may be greater than d1. In some other non-restrictive cases, d3 may be greater than d1, and d1 may be greater than d2.

[0733] In some non-restrictive examples, the quotient d2 / d1 can be at least one of approximately 0.2 to 3, or approximately 0.1 to 5.

[0734] In some non-limiting examples, along at least one lateral axis including but not limited to the X-axis, the non-transition portion 102 of the sedimentary layer of the second portion 102 n It may have a width of w3. In some non-limiting examples, the second portion 102 is the non-transition portion 102 of the sedimentary layer. n In some non-restrictive examples, the cross-sectional area may be approximated by multiplying the average film thickness d3 by the width w3.

[0735] In some non-limiting examples, w3 is the patterning film non-transition portion 101 n The width w1 may be greater than the width of w3. In some non-restrictive examples, w1 may be greater than w3.

[0736] In some non-restrictive examples, the quotient w1 / w3 may be in the range of at least one of approximately 0.1 to 10, approximately 0.2 to 5, approximately 0.3 to 3, or approximately 0.4 to 2. In some non-restrictive examples, the quotient w3 / w1 may be at least one of approximately 1, approximately 2, approximately 3, or approximately 4.

[0737] In some non-limiting examples, w3 may exceed the average film thickness d3 of the sedimentary layer 140.

[0738] In some non-restrictive cases, the quotient w3 / d3 can be at least one of approximately 10, approximately 50, approximately 100, or approximately 500. In some non-restrictive cases, the quotient w3 / d3 can be less than or equal to approximately 100,000.

[0739] In some non-limiting examples, the sedimentary layer 140 is in the sedimentary layer transition region 102 t It may have a thickness that decreases from maximum to minimum within. In some non-limiting examples, the maximum value is in the second part 102 of the sedimentary layer transition region 102. t and the non-transition section 102 of the sedimentary layer n It may be located at and / or adjacent to the boundary between the two. In some non-limiting examples, the minimum may be located at and / or adjacent to the sedimentary layer edge 635. In some non-limiting examples, the maximum may be located at the non-transitional portion 102 of the sedimentary layer of the second portion 102. n The average film thickness d3 can be in the range of approximately 0 to 0.1 nm in some non-limiting examples. In some non-limiting examples, the minimum value is in the non-transition portion 102 of the deposited layer of the second portion 102. n This could be the average film thickness d3.

[0740] In some non-limiting examples, the sedimentary layer transition region 102 t The internal thickness profile may be inclined and / or follow a gradient. In some non-restrictive examples, such a profile may be tapered. In some non-restrictive examples, the taper may follow a linear, nonlinear, parabolic, and / or exponentially damped profile.

[0741] In some non-exclusive examples, the exemplary version of device 100 in Figure 6E is 600. e As shown in the non-limiting example in, the sedimentary layer 140 is in the sedimentary layer transition region 102 tIn some non-limiting examples, the sedimentary layer 140 may completely cover the underlying layer. t A substantial sealing layer 150 may be included in at least a portion of it. In some non-limiting examples, at least a portion of the underlying layer is a sedimentary layer transition region 102 t It is not necessary for the sedimentary layer 140 to cover it.

[0742] In some non-limiting examples, the sedimentary layer 140 is in the sedimentary layer transition region 102 t The discontinuous layer 170 may be included in at least a portion of it.

[0743] Those skilled in the art will understand, though not explicitly described, that patterning material 411 may be present to some extent at the interface between the deposited layer 140 and the underlying layer. Such material may be deposited as a result of a shadowing effect where the deposited pattern is not identical to the mask pattern, and in some non-limiting examples, this may result in some evaporated patterning material 411 deposited on the masked portion of the target exposed layer surface 11. In non-limiting examples, such material may be formed as a granular structure 160 and / or as a thin film having a thickness that may be substantially less than or equal to the average thickness of the patterning film 130.

[0744] overlap In some non-limiting examples, the sedimentary layer edge 635 has a patterning coating transition region 101 of the first portion 101 on the side such that there is no overlap between the first portion 101 and the second portion 102 on the side. t It can be separated from it.

[0745] In some non-limiting examples, at least a portion of the first portion 101 and at least a portion of the second portion 102 may overlap laterally. Such overlap can be identified by an overlapping portion 603, which may be shown in Figure 6A as a non-limiting example, in which case at least a portion of the second portion 102 overlaps with at least a portion of the first ...

Claims

[Claim 1] The invention described herein.

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