Apparatus, system and method for integrating passive elements into electronic bridge components

Abstract

The bridge device includes a bridge component including a semiconductor material. The bridge device also includes one or more routing layers of the bridge component sized to electronically couple the first die and one or more second dies. Additionally, the bridge device includes one or more passive elements integrated into the bridge component and configured to store charge. Various other apparatus, systems, and methods are also disclosed.

Description

[Background technology]

[0001] In computing systems, electrical circuits can be designed on separate components, such as dies or chips, and then combined to form more complex systems. Several integrated circuits are designed to perform specific functions for the computing system, and each integrated circuit is added to the computing device as a modular component. For example, a graphics processor chip and a memory card can be added separately to a substrate or printed circuit board and function together as part of a display device. In some systems, an electronic bridge can be coupled to a die or chiplet to connect two separate integrated circuits. For example, a silicon bridge can include its own integrated circuit that transmits current and signals between the dies. Each of these components may be powered by a power source through a base substrate or other connecting component.

[0002] The accompanying drawings illustrate several exemplary embodiments and constitute a part of this specification, and together with the following description, demonstrate and explain various principles of the present disclosure. [Brief explanation of the drawings]

[0003] [Figure 1] FIG. 2 is a detailed diagram of an exemplary bridge device with exemplary integrated passive elements. [Figure 2] FIG. 2 is a side view of an exemplary bridge device having exemplary integrated passive elements and exemplary integrated active elements. [Figure 3] FIG. 1 is a side view of an exemplary system having a bridging device that interrupts power delivery to an exemplary electronics die. [Figure 4] FIG. 1 is a side view of an exemplary system using an exemplary bridge device with exemplary integrated passive elements. [Figure 5]FIG. 10 is a side view of an alternative exemplary system using an exemplary bridge device with exemplary integrated passive elements. [Figure 6] FIG. 10 is a top view of another example system using an example bridge device with additional example integrated passive elements. [Figure 7] FIG. 2 is a block diagram illustrating an example flow of charge in an example system using an example bridge device. [Figure 8] FIG. 1 is a flow diagram of an exemplary manufacturing method for integrating passive elements into an electronic bridge component. DETAILED DESCRIPTION OF THE INVENTION

[0004] Throughout the drawings, like reference numerals and descriptions indicate similar, but not necessarily identical, elements. While the exemplary embodiments described herein are susceptible to various modifications and alternative forms, specific embodiments have been shown by way of example in the drawings and are herein described in detail. However, the exemplary embodiments described herein are not intended to be limited to the particular forms disclosed. Rather, the present disclosure covers all modifications, equivalents, and alternatives falling within the scope of the appended claims.

[0005] The present disclosure is generally directed to apparatus, systems, and methods for integrating passive elements into electronic bridge components. As described below, by connecting multiple electronic components with electronic bridges, computing systems can incorporate more components into a single device or system. For example, silicon bridges provide dense connectivity between multiple dies and chiplets. In this example, the dies and chiplets are placed on a substrate that can provide power to the components via vertical copper pillars, or the like. To maintain signal integrity across the die or chip, the power supply requires a certain degree of stability and reliability to provide consistent power to the circuitry.

[0006] However, the area of ​​the die or chiplet covered by the bridge may interfere with the power supply to the circuit. In other words, the silicon bridge may interrupt the power supply to the die in the area where the bridge interfaces with the die, causing a fault. This fault results in unreliable local power distribution to the die and reduced circuit performance. In some examples, power may be redirected around the interface of the bridge, creating a longer distance between the power source and the die. However, the longer distance caused by delivering power laterally across the die rather than through vertical pillars may result in increased electrical resistance and a less effective and reliable power supply. For example, the longer the distance, the greater the rate of change of current, which may result in a larger voltage drop and greater impact. Additionally, faults may also affect system performance by limiting clock speeds, as higher speeds contribute to less reliable power due to the possibility of sudden current draws.

[0007] In other examples, larger chiplets can add more capacitors to provide additional power and / or more connections to power sources. However, the added components impact the system's form factor and potential performance, and result in higher design overhead to ensure power delivery. In other words, the additional components require more space and cost to implement. Therefore, a more efficient bridge design is needed to ensure power is delivered to the blocked area.

[0008] In some embodiments, the disclosed bridge devices include integrated passive elements, such as deep-trench capacitors (DTCs), capable of storing charge. In these embodiments, the stored charge can then be used to power the die or chip connected to the bridge device. By maintaining and storing power within the passive elements, the bridge device can improve power delivery stability to the die. In a non-limiting example, the disclosed bridge devices can include a semiconductor material, such as silicon. By integrating the passive elements directly into the silicon material of the silicon bridge, the bridge device can avoid increasing the area required to power the connected die. In some non-limiting examples, different passive elements, such as inductors or other types of capacitors, can be integrated into the bridge. In another example, the bridge device can be an active bridge with similar integrated elements to also power the active elements of the bridge device.

[0009] Additionally, a computing system can include a substrate that supplies power to multiple components, including dies, chips, bridges, or other combinations of electronic components. By integrating passive elements, such as capacitors, into the silicon bridge itself, the bridge can store extra charge to supply during current draw events for the corresponding die. By storing additional power in the bridge, the area of ​​the die or chiplet covered by the bridge can draw current from a closer location during a surge, instead of relying on a power source at a longer distance. In other words, the passive elements improve the power network in and near the area of ​​the chip or die interrupted by the bridge, thereby also increasing local decoupling capacitance. In these examples, the passive elements provide more stable power to the computing system as a whole. Thus, the disclosed apparatus, system, and manufacturing method integrate passive elements into bridge devices for better power delivery.

[0010] As described in more detail below, this disclosure describes various apparatus, systems, and methods for integrating passive elements into an electronic bridge component. In one embodiment, a bridge device includes a bridge component including a semiconductor material. The bridge device also includes one or more routing layers of the bridge component that are sized to electronically couple a first die and one or more second dies. In addition, the bridge device includes one or more passive elements integrated into the bridge component and configured to store charge.

[0011] In one example, the routing layer is disposed on the side of the bridge device facing the first die and the second die.

[0012] In one example, the bridge device may further include one or more alternative passive elements, which in this example may include integrated inductors, integrated resistors, transformers, diodes, and / or fuses.

[0013] In one example, the passive element configured to store charge includes an integration capacitor that provides the stored charge to different elements integrated on the first die, the second die, and / or the bridge component via an integrated circuit that draws current.

[0014] In one example, a passive element may be disposed on the bridge device and may provide stored charge to an area of ​​the first die overlapping the bridge device and / or an area of ​​the second die overlapping the bridge device. In this example, the passive element may be configured to increase decoupling capacitance in the area of ​​the bridge device around the passive element and in the area of ​​the first die overlapping the bridge device and / or the area of ​​the second die overlapping the bridge device. In this example, a second passive element may be integrated into the bridge component and configured to store charge, the second passive element being disposed on the bridge device between the area of ​​the first die overlapping the bridge device and the area of ​​the second die overlapping the bridge device.

[0015] In one example, the bridge device may include a passive bridge and / or an active bridge, where the passive elements of the active bridge may be configured to provide stored charge to one or more active elements of the active bridge.

[0016] In one example, the bridge device may further include one or more through-silicon vias (TSVs) embedded in the bridge component, the TSVs adapted to conduct charge through one or more layers of the bridge device.

[0017] In one embodiment, a system includes a first die comprising a first integrated circuit within a semiconductor material. The system also includes one or more second dies comprising one or more second integrated circuits within the semiconductor material and disposed within a distance of the first die. Additionally, the system includes one or more substrates coupled to the first die and the second die, the substrates adapted to provide electrical charge to the first die and the second die. The system further includes one or more bridge devices sized to span the distance and electronically couple the first die and the second die, with one or more passive elements integrated into the bridge devices for storing electrical charge.

[0018] In one example, the substrate is bonded to the first die and the second die at a metal layer of the first die and a metal layer of the second die.

[0019] In one example, the passive elements are located on the bridge device based on a first integrated circuit on a first die. Additionally or alternatively, the passive elements are located on the bridge device based on a second integrated circuit on a second die.

[0020] In one example, the bridge device is electronically coupled to the first die and the second die such that the bridge device overlaps a region of the first die and a region of the second die. In this example, the region of the first die overlapping the bridge device draws current laterally across the first die from the substrate and / or draws charge stored by passive elements of the bridge device during a first die pull-out event. In this example, the region of the second die overlapping the bridge device draws current laterally across the second die from the substrate and / or draws charge stored by passive elements of the bridge device during a second die pull-out event.

[0021] In one embodiment, a method of manufacturing includes coupling a first die to one or more substrates such that the substrate provides electrical charge to the first die. The method also includes coupling a second die to the substrate such that the substrate provides electrical charge to the second die. The method then includes integrating one or more passive elements configured to store electrical charge into the bridge device. Finally, the method includes electronically coupling the bridge device to the first die and the second die such that the passive elements are electronically coupled to the first die and / or the second die.

[0022] In one example, electronically coupling the bridge device to the first die and the second die includes electronically coupling a routing layer of the bridge device to a metal layer of the first die, a metal layer of the second die, a different layer of the first die, and / or a different layer of the second die.

[0023] Features from any of the embodiments described herein may be used in combination with each other in accordance with the general principles described herein. These and other embodiments, features, and advantages will be more fully understood from the following detailed description read in conjunction with the accompanying drawings and claims.

[0024] Below, a detailed description of an exemplary apparatus for integrating passive elements into an electronic bridge component is provided with reference to Figures 1-2. A detailed description of a system having a bridge apparatus that interrupts power delivery to an electronic die is provided with reference to Figure 3. Additionally, a detailed description of a system using a bridge with integrated passive elements is provided with reference to Figures 4-6. Furthermore, a detailed description of charge flow is provided with reference to Figure 7. A detailed description of an exemplary method for fabricating a bridge device with integrated passive elements is also provided with reference to Figure 8.

[0025] FIG. 1 is a detailed diagram of an example bridge device 100 having example integrated passive elements 106(1)-(N). In a non-limiting example, the term "bridge" refers to an electronic component that can electronically couple two other electronic components. Examples of bridges include, but are not limited to, elevated fanout bridges (EFBs), embedded multi-die interconnect bridges (EMIBs), silicon bridges, and / or any other type or form of connecting bridge component. In the example of FIG. 1, the bridge device 100 includes a bridge component 102 that includes a semiconductor material such as silicon. In some examples, the bridge component 102 includes a rigid material that maintains a particular shape. In some examples, the semiconductor material includes one or more portions that function as insulators and one or more portions that function as conductors.

[0026] 1 , bridge device 100 includes a routing layer 104 of bridge components 102 sized to electronically couple a first die and one or more second dies. For example, bridge device 100 may be a silicon bridge that provides electronic connectivity between the first die and the second die through routing layer 104. In this example, routing layer 104 may include integrated circuits designed into the silicon material of bridge device 100. In non-limiting examples, the terms "die" and "chip" refer to modular blocks that include integrated circuits. In these examples, the term "integrated circuit" refers to electronic circuits that are integrated and / or etched directly into electronic components. Examples of dies or chips include, but are not limited to, systems-on-chips (SOCs), graphic processing units (GPUs), central processing units (CPUs), high-bandwidth memory (HBM) stacks, interface circuits, serializer / deserializer (SerDes) blocks, semiconductor chips, and / or any other suitable modular components having integrated circuits.

[0027] Additionally, bridge device 100 includes passive elements 106(1)-(N) integrated into bridge component 102. In some examples, one or more of passive elements 106(1)-(N) are configured to store electrical charge. In a non-limiting example, the term "passive element" refers to an electronic component that can receive electricity and does not actively switch external power or current. Examples of passive elements include, but are not limited to, deep-trench capacitors (DTCs), inductors, resistors, metal-insulator-metal capacitors (MIM Caps), air-gap capacitors, through-silicon vias (TSVs), and / or any other suitable passive components. In the example of FIG. 1, passive elements 106(1)-(N) may include alternative types of passive elements, such as integrated capacitors that store electrical charge and / or integrated inductors and / or integrated resistors that perform other functions, such as regulating current. Furthermore, bridge device 100 of FIG. 1 represents a passive bridge. By way of non-limiting example, the term "passive bridge" refers to a bridge that has only passive elements and / or that does not actively switch external power or current.

[0028] FIG. 2 is a side view of a different bridge device 100 having integrated passive elements 106(1)-(10) and integrated active elements 202(1)-(4). In contrast to FIG. 1, the bridge device 100 of FIG. 2 represents an active bridge. In a non-limiting example, the term "active bridge" refers to a bridge having active elements that require electricity to function. In a non-limiting example, the term "active element" refers to an electronic component that can control electricity and requires external power to function. Examples of active elements include, but are not limited to, computing devices, transistors, and / or any other type of active component.

[0029] In some examples, passive elements 106(1)-(6) of the active bridge are configured to provide stored charge to active elements 202(1)-(4), such as transistors. In further examples, bridge device 100 includes one or more through-silicon vias (TSVs) embedded in bridge element 102, where the TSVs are adapted to conduct charge through one or more layers of bridge device 100. In the example of FIG. 2, passive elements 106(7)-(10) may represent embedded TSVs that allow power to be delivered directly through bridge device 100. In this example, vias, such as TSVs, may include a conductive material, such as copper, to more easily transmit electricity.

[0030] Additionally, other examples of bridge device 100 may integrate different types of passive elements, different combinations of passive elements, and / or different combinations of passive and active elements. In a passive bridge, the passive elements provide stored charge to the die coupled to the bridge as needed. In an active bridge, the passive elements provide stored charge to the die and / or active elements of the bridge.

[0031] 3 is a side view of an example system 300 having a bridge device 100 that prevents power delivery of an electrical charge 308 to a first die 302 and a second die 304. System 300 generally represents any type or form of computing system or device having electronic components for performing computing functions. Examples of system 300 include, but are not limited to, chiplets, printed circuit boards (PCBs), processors and / or other electronic components, or combinations thereof. Additional examples of system 300 include, but are not limited to, laptops, tablets, desktops, servers, mobile phones, personal digital assistants (PDAs), multimedia players, embedded systems, wearable devices (e.g., smart watches, smart glasses, etc.), smart vehicles, so-called Internet of Things devices (e.g., smart appliances, etc.), game consoles, servers, variations or combinations of one or more of these, one or more portions of these, or any other suitable computing device.

[0032] Many other devices or subsystems can be connected to system 300 of Figures 3-7. Conversely, not all of the components and devices shown in Figures 3-7 need be present to practice the embodiments described and / or illustrated herein. The above-referenced devices and subsystems can be interconnected in ways different from those shown in Figures 3-7. Additionally, system 300 can employ any number of software, firmware, and / or hardware configurations.

[0033] 3 , the system 300 includes a first die 302 including a first integrated circuit within a semiconductor material and a second die 304 including a second integrated circuit within the semiconductor material and disposed within a distance of the first die 302. For example, the first die 302 and the second die 304 may both be silicon dies having integrated circuits etched into the silicon material. In the example of FIG. 3 , the system 300 includes a substrate 306 coupled to the first die 302 and the second die 304, the substrate 306 configured to provide an electric charge 308 to the first die 302 and the second die 304. In this example, the system 300 further includes a bridge device 100 sized to span the distance between the first die 302 and the second die 304 and to electronically couple the first die 302 and the second die 304. However, in this example, bridge device 100 blocks charge 308 from the area of ​​first die 302 that overlaps bridge device 100 and from the area of ​​second die 304 that overlaps bridge device 100, as indicated by the dashed arrows. In this example, bridge device 100 does not include passive elements 106(1)-(N) of FIG. 1.

[0034] FIG. 4 is a side view of a system 300 using the bridge device 100 with integrated passive elements 106(1)-(N) of FIG. 1. In the example of FIG. 4, the passive elements 106(1)-(N) are integrated into the bridge device 100 to store electrical charge 308. In this example, the routing layer 104 of FIG. 1 is disposed on the side of the bridge device 100 facing the first die 302 and the second die 304, thus providing connectivity between the first die 302 and the second die 304. Additionally, the passive elements 106(1)-(N) are disposed on the bridge device 100 to store electrical charge 308 and deliver the stored electrical charge 308 to the area of ​​the first die 302 that overlaps the bridge device 100 and / or the area of ​​the second die 304 that overlaps the bridge device 100. In other words, the passive elements 106(1) to (N) are placed in locations where the bridge device 100 interferes with the power supply, as indicated by the dotted arrows.

[0035] 4, the substrate 306 is coupled to the first die 302 and the second die 304 at metal layer 402(1) of the first die 302 and metal layer 402(2) of the second die 304. In this example, the routing layer 104 of the bridge device 100 is coupled to metal layers 402(1)-(2). In some examples, the bridge device 100 is electronically coupled to the first die 302 and the second die 304 such that the bridge device 100 overlaps a region of the first die 302 and a region of the second die 304. In these examples, the region of the first die 302 that overlaps the bridge device 100 draws current laterally across the first die 302 from the substrate 306 and / or from charge 308 stored by the passive elements 106(1)-(N) of the bridge device 100. Similarly, the area of ​​the second die 304 that overlaps the bridge device 100 draws current laterally across the second die 304 from the substrate 306 and / or from the charge 308 stored by the passive elements 106(1)-(N) of the bridge device 100.

[0036] In the above example, drawing current laterally across the first die 302 and / or second die 304 increases the delay and / or voltage drop of power to the overlap region. In contrast, drawing current from electricity stored in the passive elements 106(1)-(N) provides a closer power source with less delay and / or less voltage drop. In other words, integrating passive elements such as capacitors provides extra charge at a local source to reduce the effects of distance. Additionally, the bridge device 100 of FIG. 2 can include TSVs such that the overlap region of the first die 302 and / or second die 304 draws power directly through the bridge device 100 via the TSVs, thereby reducing distance and supplementing power from local sources in the passive elements 106(1)-(N) compared to drawing current laterally across the first die 302 and / or second die 304.

[0037] In some examples, the passive elements 106(1)-(N) are configured to increase decoupling capacitance in the area of ​​the bridge device 100 around each of the passive elements 106(1)-(N), as well as in the area of ​​the first die 302 that overlaps the bridge device 100 and / or the area of ​​the second die 304 that overlaps the bridge device 100. In non-limiting examples, the term “decoupling capacitance” refers to the ability of a decoupling capacitor to store charge. In these examples, the term “decoupling capacitor” refers to a capacitor used to decouple or isolate portions of a circuit. For example, a DTC can provide additional local decoupling capacitance such that the overlapping areas of the first die 302 and the second die 304 draw charge from the DTC without affecting the global supply, thereby improving overall power supply stability during sudden power draws.

[0038] FIG. 5 is a side view of an alternative system 300 using a bridge device 100 with integrated passive elements 106(1)-(N). In the example of FIG. 5, first dies 302(1)-(2) can represent first chiplets, and second dies 304(1)-(2) can represent second chiplets. As shown in the example of FIG. 5, bridge device 100 can be coupled from the top, rather than from the bottom as would be the case if integrated with substrate 306, to a first die 302(2) that is also coupled to first die 302(1), and a second die 304(2) that is also coupled to second die 304(1). In this example, the routing layer 104 of bridge device 100 is coupled to different layers of the first die 302(2) and second die 304(2) rather than to metal layers 402(1)-(2) of FIG. 4.

[0039] 5 does not directly impede charge 308, the passive elements 106(1)-(N) continue to provide additional decoupling capacitance to improve the quality of power delivery from the power network to first die 302(2) and second die 304(2). For example, in the case of sensitive high-speed inter-chip circuits, the placement of bridge device 100 can improve overall power stability. Alternatively, bridge device 100 can be arranged in other configurations according to different needs and configurations of the various dies and chiplets of system 300.

[0040] 6 is a top view of a system 300 using a bridge device 100 with additional integrated second passive elements 602(1)-(N). In some examples, the passive elements 106(1)-(N) of FIG. 1 are disposed on the bridge device 100 based on the first integrated circuit of the first die 302 and / or the second integrated circuit of the second die 304. In the example of FIG. 6, the bridge device 100 includes second passive elements 602(1)-(N) integrated into the bridge component 102 and configured to store charge 308. In this example, the second passive elements 602(1)-(N) are disposed on the bridge device 100 between the area of ​​the first die 302 that overlaps with the bridge device 100 and the area of ​​the second die 304 that overlaps with the bridge device 100. In other words, bridge device 100 may include additional passive elements to add decoupling capacitance localized to first die 302 and / or second die 304 beyond the overlap region. In this example, the additional decoupling capacitance provided by second passive elements 602(1)-(N) may improve the power stability of the active bridge. In other examples, system 300 may include alternative configurations having additional or fewer components compared to those shown in FIGS. 4-6.

[0041] 7 is a block diagram illustrating an example flow of charge 308 in a system 300 that uses bridge device 100. As shown in FIG. 7, substrate 306 supplies charge 308 to first die 302, second die 304, and bridge device 100. In addition, passive elements 106 of bridge device 100 hold stored charge 702 from charge 308. In this example, active elements 202 can draw power from stored charge 702 of passive elements 106.

[0042] In some examples, passive element 106 represents an alternative passive element, such as an integrated inductor, an integrated resistor, a transformer, a diode, a fuse, and / or any type of passive element that does not store charge. In these examples, the alternative passive element, such as an integrated inductor or an integrated resistor, can regulate the current of charge 308 and / or stored charge 702. In other examples, passive element 106 represents an integrated capacitor or other type of passive element that can store charge. In these examples, the integrated capacitor provides the stored charge 702 to different elements integrated in bridge device 100, such as first die 302, second die 304, and / or active element 202, via an integrated circuit of bridge device 100 that draws current. In some examples, active element 202 can further regulate or control charge 308 and / or stored charge 702.

[0043] 7 , the area of ​​the first die 302 overlapping with the bridge device 100 draws current from the charge 702 stored by the passive elements 106 of the bridge device 100 during a draw event 704 of the first die 302. In a non-limiting example, the term “draw event” refers to a computing event in which an amount of electricity or current is drawn from a power source, such as during a power surge. By drawing power from the stored charge 702 during the draw event 704, the overlapping area of ​​the first die 302 can increase power stability and speed by compensating for any power drawn from the substrate 306, which in turn reduces the impact of the draw event 704 on the global power supply of the system 300. In another example, the second die 304 can similarly draw from the stored charge 702 during a draw event.

[0044] Figure 8 illustrates an exemplary method of manufacturing, assembling, using, adjusting, or otherwise configuring or forming the systems and apparatus presented herein. The steps illustrated in Figure 8 can be performed by any individual and / or by any suitable type or form of manual and / or automated equipment. In particular, Figure 8 is a flow diagram of an exemplary method 800 of manufacturing a bridge device.

[0045] 8, one or more of the systems described herein may couple a first die to one or more substrates such that the substrate provides an electrical charge to the first die in step 810. For example, as shown in FIG. 4, the first die 302 is coupled to the substrate 306 such that the substrate 306 provides an electrical charge 308 to the first die 302.

[0046] The systems described herein can perform step 810 in a variety of ways. As shown in FIG. 4, the first die 302 can be coupled to a top surface of a substrate 306, which can include a conductive material, such as vertical copper pillars, to provide charge 308 from a power source to the first die 302. In the example of FIG. 5, the first die 302(2) is coupled to the substrate 306, which provides charge 308 to the first die 302(2). In this example, the first die 302(1) is coupled to the first die 302(2) such that charge 308 is then provided from the first die 302(2) to the first die 302(1). In other examples, differently configured dies or chips can be combined as part of the first die 302 and powered by the substrate 306.

[0047] 8, in step 820, one or more of the systems described herein may couple a second die to a substrate such that the substrate provides an electrical charge to the second die. For example, as shown in FIG. 4, second die 304 is coupled to substrate 306 such that substrate 306 provides an electrical charge 308 to second die 304.

[0048] The systems described herein can perform step 820 of Figure 8 in a variety of ways. In the example of Figure 4, the second die 304 can be coupled to a top surface of the substrate 306, which can provide the charge 308 from a power source to the second die 304. In the example of Figure 5, the second die 304(2) is coupled to the substrate 306, which provides the charge 308 to the second die 304(2). In this example, the second die 304(1) is coupled to the second die 304(2) such that the charge 308 is then provided from the second die 304(2) to the second die 304(1). In other examples, similar to the first die 302, differently configured dies or chips can be combined as part of the second die 304 and powered by the substrate 306.

[0049] 8, in step 830, one or more of the systems described herein can integrate one or more passive elements configured to store charge into the bridge device. For example, as shown in FIG. 1, passive elements 106(1)-(N) are integrated into bridge device 100, and passive elements 106(1)-(N) are configured to store charge 308 of FIG. 4.

[0050] The systems described herein can perform step 830 of FIG. 8 in a variety of ways. In some examples, passive elements, such as DTCs, can be etched into the silicon material of bridge device 100. In these examples, deep trenches are etched into the silicon substrate of bridge device 100, and a dielectric layer is integrated into the deep trenches. In the example of FIG. 2, passive elements 106(1)-(10) are placed at the two ends of bridge device 100 based on the expected pairing with the die at the ends. Additionally, the density of the spacing between passive elements can be adjusted based on the needs of system 300 and / or bridge device 100, such as by integrating fewer passive elements for a simpler die design or by integrating more and denser passive elements for an active bridge.

[0051] 8, at step 840, one or more of the systems described herein may electronically couple the bridge device to the first die and the second die such that the passive elements are electronically coupled to the first die and / or the second die. For example, as shown in FIG. 4, the bridge device 100 is electronically coupled to the first die 302 and the second die 304 such that the passive elements 106(1)-(N) of FIG. 1 are electronically coupled to the first die 302 and the second die 304.

[0052] 8 in various ways. In the example of FIG. 4, the passive elements 106(1)-(N) of the bridge device 100 are disposed at locations where the first die 302 and the second die 304 couple to the bridge device 100. Thus, in this example, the passive elements 106(1)-(N) are in direct contact with the metal layers 402(1)-(2) of the first die 302 and the second die 304, thereby electronically coupling the first die 302 and the second die 304. In the example of FIG. 4, electronically coupling the bridge device 100 to the first die 302 and the second die 304 includes electronically coupling the routing layer 104 of the bridge device 100 to the metal layer 402(1) of the first die 302 and / or the metal layer 402(2) of the second die 304. 5 , electronically coupling the bridge device 100 to the first die 302 and the second die 304 includes electronically coupling the routing layer 104 of the bridge device 100 to a different layer, such as an opposite surface of the first die 302, and / or a different layer of the second die 304. Based on the design of the electrical paths and / or circuits of the first die 302 and the second die 304, the arrangement of the passive components 106(1)-(N) in the bridge device 100 can be modified to accommodate the coupling of the bridge device 100 with the first die 302 and the second die 304. Alternatively, the design of the first die 302 and / or the second die 304 can be modified based on the arrangement of the passive components 106(1)-(N) in the bridge device 100.

[0053] As described above, the disclosed apparatus, systems, and methods integrate passive elements into a bridge device to provide more stable power. Accordingly, the embodiments and systems described herein integrate at least one passive element into a bridge component, such as a silicon substrate. The disclosed bridge device includes at least one routing layer that electronically couples a first die and one or more second dies. The computing system disclosed herein includes a substrate that provides power to the first die, the second die, and the bridge device. The passive elements of the bridge device then accumulate charge from the system's substrate, and the first die and / or the second die can subsequently draw current from the accumulated charge of the passive elements, particularly during a draw event. In addition, the bridge device may include one or more active elements that draw current from the accumulated charge of the passive elements. Furthermore, additional passive or active elements may be integrated into the bridge device based on the design and circuitry of the first die, the design and circuitry of the second die, the active elements of the bridge device, and / or other components of the system. Thus, the disclosed system and bridge device can provide faster and more stable power delivery to areas of the die blocked by the electronic bridge device.

[0054] While the foregoing disclosure describes various embodiments using specific block diagrams, flow diagrams, and examples, each block diagram element, flow diagram step, operation, and / or component described and illustrated herein can be implemented individually and / or collectively using a wide variety of hardware, software, or firmware (or any combination thereof) configurations. Additionally, any disclosure of components stored within other components should be considered exemplary in nature, as many other architectures can be implemented to achieve the same functionality.

[0055] In some examples, all or a portion of the example system 300 of Figures 4-6 may represent part of a cloud computing or network-based environment. A cloud computing environment may provide various services and applications over the Internet. These cloud-based services (e.g., software as a service, platform as a service, infrastructure as a service, etc.) may be accessible through a web browser or other remote interface. Various functionality described herein may be provided through a remote desktop environment or any other cloud-based computing environment.

[0056] In some examples, all or a portion of the example system 300 of FIGS. 4-6 may represent a portion of a mobile computing environment. The mobile computing environment may be implemented by a wide range of mobile computing devices, including mobile phones, tablet computers, e-readers, personal digital assistants, wearable computing devices (e.g., computing devices with head-mounted displays, smart watches, etc.), one or more variations or combinations thereof, or any other suitable mobile computing device. In some examples, the mobile computing environment may have one or more different capabilities, including, for example, dependence on battery power, presenting only one foreground application at any given time, remote management capabilities, touchscreen capabilities, location and movement data (e.g., provided by a global positioning system, gyroscope, accelerometer, etc.), a restricted platform that restricts system-level configuration changes and / or limits the ability of third-party software to inspect the behavior of other applications, controls that restrict application installation (e.g., provided only from approved application stores), etc. The various capabilities described herein may be provided to and / or interact with the mobile computing environment.

[0057] The process parameters and order of steps described and / or illustrated herein are provided by way of example only and can be changed as desired. For example, although the steps illustrated and / or described herein may be illustrated or described in a particular order, these steps do not necessarily have to be performed in the order illustrated or described. The various exemplary methods described and / or illustrated herein can also omit one or more of the steps described or illustrated herein or can include additional steps in addition to those disclosed.

[0058] The foregoing description is provided to enable those skilled in the art to best utilize various aspects of the exemplary embodiments disclosed herein. This exemplary description is not intended to be exhaustive or to be limited to any precise form disclosed. Many changes and modifications are possible without departing from the spirit and scope of the present disclosure. The embodiments disclosed herein are to be considered in all respects as illustrative and not restrictive. In determining the scope of the present disclosure, reference should be made to the appended claims and their equivalents.

[0059] Unless otherwise specified, the terms "connected to" and "coupled to" (and their derivatives) as used in this specification and claims should be interpreted as allowing both direct and indirect connections (i.e., via other elements or components). Additionally, the terms "a" or "an" as used in this specification and claims should be interpreted as meaning "at least one of." Finally, for ease of use, the terms "including" and "having" (and their derivatives) as used in this specification and claims are interchangeable with the term "comprising," and have the same meaning.

Claims

1. a bridge component comprising a semiconductor material; at least one routing layer of the bridge component sized to electronically couple a first die and at least one second die; at least one passive element integrated into the bridge component and configured to store charge; Bridge device.

2. the routing layer is disposed on a side of the bridge device facing the first die and the second die. The bridge device of claim 1 .

3. comprising at least one alternative passive element; The bridge device of claim 1 .

4. The alternative passive element is: Integrated inductors, Integrated resistors, transformers, Diode, or fuse, at least one of The bridge device of claim 3.

5. the passive element configured to store the charge comprises an integrated capacitor; The bridge device of claim 1 .

6. The integrated capacitor transfers the stored charge through an integrated circuit that draws current. the first die, the second die, or different elements integrated into said bridge component; supplying at least one of The bridge device of claim 5.

7. The passive element is disposed on the bridge device and transfers the accumulated charge to an area of ​​the first die that overlaps the bridge device; or an area of ​​the second die overlapping the bridge device; supplying at least one of The bridge device of claim 1 .

8. The passive element includes a region of the bridge device around the passive element; the area of ​​the first die that overlaps the bridge device; or the area of ​​the second die overlapping the bridge device; and configured to increase decoupling capacitance in The bridge device of claim 7.

9. a second passive element integrated into the bridge element and configured to store the charge; the second passive element is disposed on the bridge device between an area of ​​the first die overlapping the bridge device and an area of ​​the second die overlapping the bridge device; The bridge device of claim 7.

10. The bridge device a passive bridge, or Active bridge, at least one of The bridge device of claim 1 .

11. the passive elements of the active bridge are configured to supply stored charge to at least one active element of the active bridge; The bridge device of claim 10.

12. at least one through-silicon via (TSV) embedded in the bridge element; the TSV conducts the charge through at least one layer of the bridge device; The bridge device of claim 1 .

13. a first die having a first integrated circuit in a semiconductor material; at least one second die having a second integrated circuit within the semiconductor material and positioned within a predetermined distance from the first die; at least one substrate coupled to the first die and the second die, the substrate providing electrical charges to the first die and the second die; at least one bridge device sized to electronically couple the first die and the second die across the distance, at least one passive element integrated into the bridge device for storing the charge; system.

14. the substrate is bonded to the first die and the second die at a metal layer of the first die and a metal layer of the second die; The system of claim 13.

15. The passive element is the first integrated circuit of the first die; or the second integrated circuit on the second die; on the bridge device based on at least one of The system of claim 13.

16. the bridge device is electronically coupled to the first die and the second die such that the bridge device overlaps an area of ​​the first die and an area of ​​the second die. The system of claim 13.

17. The area of ​​the first die overlapping the bridge device, during a pull-out event of the first die, the substrate laterally across the first die; or the charge stored by the passive elements of the bridge device; drawing current from at least one of 17. The system of claim 16.

18. The area of ​​the second die overlapping the bridge device, during a pull-out event of the second die, the substrate laterally across the second die; or the charge stored by the passive elements of the bridge device; drawing current from at least one of 17. The system of claim 16.

19. coupling a first die to at least one substrate, the substrate providing an electrical charge to the first die; coupling a second die to the substrate, the substrate providing the charge to the second die; Integrating at least one passive element configured to store said charge into the bridge device; electronically coupling the bridge device to the first die and the second die; The passive element is the first die, or the second die; Manufacturing method.

20. Electronically coupling the bridge device to the first die and the second die includes: a metal layer of the first die; a metal layer of the second die; a different layer of the first die, or a different layer of the second die; and electronically coupling to at least one of The method of claim 19.

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